Implanted electrode and brain-computer interface device
By designing implanted electrodes that integrate photostimulation and electrical stimulation functions in the brain-computer interface device, the problem that is difficult to take into account in the existing technology and the treatment needs of single-cell stimulation in large-scale and single-cell stimulation is achieved, and more efficient therapeutic effects are achieved.
Patent Information
- Application Number
- CN202510112263.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-23
- Publication Date
- 2025-04-25
AI Technical Summary
Existing brain-computer interface devices have problems of insufficient specificity and low efficiency when stimulating large-scale cells and single cells, making it difficult to take into account both needs.
An implanted electrode is designed, integrating the light stimulation and electrical stimulation functions, and the light stimulation and electrical stimulation signals are generated through the light emitting unit layer and the first metal layer respectively to form a photoelectric stimulation electrode, which can be targeted for a large range of cells and individual cells.
The recovery of electrical stimulation of large-scale cells and precise photo-stimulation treatment of single cells has been achieved, which has improved the therapeutic effect and solved the problem that the existing technology is difficult to take into account both the stimulation needs of large-scale and single cells.
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Figure CN119868794A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of brain-computer interface technology, and in particular to an implanted electrode and a brain-computer interface device. Background Art
[0002] Brain-computer interface has become an important direction for future development. In existing brain-computer interface devices, electrodes are usually implanted into the cerebral cortex. The electrodes are stimulated by light or electricity. Electric stimulation is mainly used for nerve repair and regeneration, and damaged cells in the area restore nerve function, but there is a problem of insufficient stimulation specificity. Light stimulation is mainly used to accurately stimulate target cells to achieve the purpose of targeted treatment, but there are problems of small stimulation range and low efficiency. Therefore, the functions of current implanted electrodes are relatively single. Summary of the invention
[0003] In view of this, the purpose of this application is to propose an implantable electrode and brain-computer interface device that integrates light stimulation and electrical stimulation functions, which is conducive to taking into account the stimulation treatment needs of a large range of cells and single cells.
[0004] Based on the above purpose, the present application provides an implantable electrode, which includes an implantable portion and a non-implantable portion, wherein the non-implantable portion is located at one end of the implantable portion;
[0005] The implantation portion includes a light emitting unit layer and a first metal layer;
[0006] The non-implanted portion includes a control module;
[0007] The implanted electrode further comprises:
[0008] A first lead, the first lead connecting the first metal layer and the control module, and used for receiving a first electrical signal on the control module, wherein the first electrical signal is used for driving the first metal layer to generate an electrical stimulation signal;
[0009] A second lead is connected between the light-emitting unit layer and the control module, and is used to receive a second electrical signal from the control module, wherein the second electrical signal is used to drive the light-emitting unit layer to generate a light stimulation signal.
[0010] In one embodiment, the implantation portion includes a first substrate, and the light-emitting unit layer and the first metal layer are arranged on the same side or opposite sides of the first substrate;
[0011] The light emitting unit layer includes a plurality of sub-pixels;
[0012] Preferably, a plurality of said sub-pixels are arranged in a matrix;
[0013] Preferably, the sub-pixel comprises an anode, a cathode and a light-emitting material, the light-emitting material is arranged between the anode and the cathode, and the anode is located on a side of the light-emitting material close to the first substrate.
[0014] In one embodiment, the implanted electrode includes a second metal layer, the second metal layer is electrically connected to the light-emitting unit layer, and is located on a side of the light-emitting unit layer away from the light-emitting surface; the second metal layer is prepared on the same layer as the first metal layer;
[0015] Preferably, the second lead portion is located on the second metal layer.
[0016] In one embodiment, the orthographic projection of the first metal layer on the light-emitting unit layer does not overlap with the sub-pixel;
[0017] Preferably, the orthographic projection of the first metal layer on the light-emitting unit layer is located between adjacent sub-pixels;
[0018] Preferably, the implantation part comprises an implantation end, the implantation end is located at one end of the implantation part away from the non-implantation part, and the first metal layer is located at the implantation end.
[0019] In one embodiment, the first metal layer is located on a side of the first substrate away from the light-emitting unit layer;
[0020] Preferably, a first insulating layer and / or a first buffer layer is provided between the first substrate and the light-emitting unit layer;
[0021] Preferably, a second insulating layer and / or a second buffer layer is provided between the first metal layer and the first substrate.
[0022] In one embodiment, the first metal layer is located on a side of the light-emitting unit layer away from the first substrate;
[0023] Preferably, the implantation portion further comprises an encapsulation layer, the encapsulation layer is located on a side of the light emitting unit layer away from the first substrate, and the first metal layer is located on a side of the encapsulation layer away from the first substrate;
[0024] Preferably, the orthographic projection of the first metal layer on the light-emitting unit layer covers the sub-pixel;
[0025] Preferably, the material of the first metal layer includes indium tin oxide.
[0026] In one embodiment, the first metal layer includes an electrode point for generating the electrical stimulation signal, and the electrode point is connected to the first lead;
[0027] Preferably, the first metal layer includes a plurality of the electrode points;
[0028] Preferably, the plurality of electrode points are arranged along an extension direction of the implant portion, and the first lead wires are connected to the electrode points in a one-to-one correspondence.
[0029] In one embodiment, the non-implanted portion further comprises an electrode outer layer, and the electrode outer layer is located between the implanted portion and the control module;
[0030] The electrode outer layer comprises a third metal layer, the first lead comprises a first non-implanted segment, the second lead comprises a second non-implanted segment, and the first non-implanted segment and the second non-implanted segment are located in the third metal layer;
[0031] Preferably, the third metal layer is prepared in the same layer as the first metal layer;
[0032] Preferably, the electrode outer layer further includes a second substrate and a second supporting film layer, and the second substrate is located between the second supporting film layer and the third metal layer.
[0033] In one embodiment, the control module includes a flexible printed circuit board, the flexible printed circuit board includes bonding pins, and the first lead and the second lead are respectively connected to the bonding pins;
[0034] Preferably, the extending direction of the bonding pin is perpendicular to the plane where the light emitting unit layer is located.
[0035] Based on the same inventive concept, the present application also provides a brain-computer interface device, which includes the implanted electrode described in any one of the above items.
[0036] Compared with the prior art, the implantable electrode provided in the present application generates an electrical stimulation signal through the first metal layer and generates a light stimulation signal through the light-emitting unit layer, thereby forming a photoelectric stimulation electrode, integrating light stimulation function and electrical stimulation function, and can combine the respective advantages of light stimulation electrode and electrical stimulation electrode to restore a large range of cells through electrical stimulation signals. If a single cell has not recovered its function, it can be precisely stimulated and treated through light stimulation signals, which solves the problem of difficulty in balancing the stimulation treatment needs of a large range of cells and a single cell, and can improve the treatment effect. BRIEF DESCRIPTION OF THE DRAWINGS
[0037] In order to more clearly illustrate the technical solutions in the present application or related technologies, the drawings required for use in the embodiments or related technical descriptions are briefly introduced below. Obviously, the drawings described below are only embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0038] Figure 1 This is a schematic diagram of the structure of the implanted electrode in one embodiment of the present application;
[0039] Figure 2 This is a schematic diagram of the layer structure of the light stimulation part of the implanted electrode in one embodiment of the present application;
[0040] Figure 3 This is a schematic diagram of the layer structure of the electrical stimulation part of the implanted electrode in one embodiment of the present application;
[0041] Figure 4 This is a schematic diagram of the layer structure of the light stimulation part of the implanted electrode in another embodiment of the present application;
[0042] Figure 5 This is a schematic diagram of the layer structure of the light stimulation part of the implanted electrode in another embodiment of the present application;
[0043] Figure 6 This is a schematic diagram of the structure of an implanted electrode in another embodiment of the present application;
[0044] Figure 7 This is a schematic diagram of the structure of an implanted electrode in another embodiment of the present application;
[0045] Figure 8 This is a schematic diagram of the layer structure of the light stimulation part of the implanted electrode in another embodiment of the present application;
[0046] Fig. 9 This is a schematic diagram of the layer structure of the electrical stimulation part of the implanted electrode in another embodiment of the present application;
[0047] Fig.10 This is a schematic diagram of the layer structure of the implanted electrode in another embodiment of the present application;
[0048] Fig.11 This is a schematic diagram of the structure of an implanted electrode in another embodiment of the present application;
[0049] Fig.12 This is a schematic diagram of the structure of an implanted electrode in another embodiment of the present application;
[0050] Fig.13 This is a schematic diagram of the layer structure of the outer layer of the electrode implanted in one embodiment of the present application;
[0051] Fig.14 This is a schematic diagram of the layer structure of the electrical stimulation part of the implanted electrode in another embodiment of the present application.
[0052] Marking Description:
[0053] 100, implant electrode; 10, implant part; 101, implant end; 11, first substrate; 12, light-emitting unit layer; 120, sub-pixel; 121, anode; 122, cathode; 123, light-emitting material; 124, second metal layer; 13, first metal layer; 130, electrode point; 14, first insulating layer; 15, second insulating layer; 16, encapsulation layer; 17, first supporting film layer;
[0054] 20. non-implanted part; 21. control module; 22. electrode outer layer; 220. third metal layer; 221. second substrate; 222. second support film layer;
[0055] 30. First lead wire; 40. Second lead wire. DETAILED DESCRIPTION
[0056] In order to make the objectives, technical solutions and advantages of the present application more clearly understood, the present application is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.
[0057] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present application should be the usual meanings understood by people with ordinary skills in the field to which the present application belongs. The "first", "second" and similar words used in the embodiments of the present application do not represent any order, quantity or importance, but are only used to distinguish different components. "Including" or "comprising" and similar words mean that the elements or objects appearing in front of the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.
[0058] When implanting the implantable electrode of the brain-computer interface device, a small hole is usually made in the skull, and then the electrode is implanted into the cerebral cortex. The cerebral cortex has different functional divisions, which can control different functions of the human body. In brain-computer interface devices, light stimulation and electrical stimulation are two common stimulation methods. Among them, implantable electrical stimulation electrodes mainly stimulate target nerves with a certain degree of current pulses to adjust or restore brain, nerve or muscle functions. They can be used for spinal cord stimulation to treat pain, and deep brain stimulation to treat Parkinson's syndrome, tremor, dystonia and obsessive-compulsive disorder. Implantable light stimulation electrodes are mainly based on the principles of optogenetics. Using gene editing technology, exogenous light-sensitive protein genes are introduced into living cells, and light-sensitive channel proteins are expressed on the cell membrane structure. Then, through the irradiation of light of a specific wavelength, the activation and closure of light-sensitive channel proteins on the cell membrane structure are completed to control the opening and closing of ion channels, thereby changing the changes in cell membrane voltage, thereby controlling the excitation or inhibition of neurons, specifically, the influx of cations to stimulate cell activity; the influx of anions to inhibit cell activity.
[0059] When the implanted electrodes of the brain-computer interface device use electrical stimulation electrodes, the electrical stimulation electrodes are implanted in the brain nerve tissue. There are electrolytes in the brain tissue fluid and cells that can transmit electric current. After the electrical stimulation electrodes are energized, it is generally higher than the stimulable threshold and can stimulate cells in a certain area on a large scale. However, when it is necessary to precisely stimulate the target cells, electrical stimulation will also stimulate normal cells. Since the healed cells are repeatedly electrically stimulated, it will cause certain paralysis and damage.
[0060] When the implanted electrodes of the brain-computer interface device use photostimulation electrodes, due to the small number of photoelectrode channels and the small range of stimulation, the treatment efficiency for regional cells is relatively poor, which is not conducive to the regeneration and repair of large areas of cells. Therefore, it is difficult for related technologies to take into account the stimulation and treatment needs of large-scale cells and single cells.
[0061] Based on this, the present application provides an implantable electrode and a brain-computer interface device to solve the above problems.
[0062] Please refer to Figure 1As shown, an implantable electrode 100 provided in one embodiment of the present application, the implantable electrode 100 includes an implantable portion 10 and a non-implantable portion 20, the implantable portion 10 includes a light-emitting unit layer 12 and a first metal layer 13; the non-implantable portion 20 includes a control module 21. Among them, the implantable portion 10 can be a portion that can be implanted into human tissue, for example, the implantable portion 10 can be implanted into the cerebral cortex to achieve stimulation therapy of brain cells. The non-implantable portion 20 can be a portion located outside the human tissue and connected accordingly, and the size of the implantable portion 10 is smaller than the size of the non-implantable portion 20. The control module 21 in the non-implantable portion 20 can be a flexible printed circuit board (FPC), and the control module 21 can be connected to an external power supply and an internal light-emitting device to achieve independent control of electrical stimulation and light stimulation.
[0063] The implant electrode 100 further includes a first lead 30 and a second lead 40. The first lead 30 connects the first metal layer 13 and the control module 21, and is used to receive a first electrical signal on the control module 21, and the first electrical signal is used to drive the first metal layer 13 to generate an electrical stimulation signal. The second lead 40 connects the light-emitting unit layer 12 and the control module 21, and is used to receive a second electrical signal on the control module 21, and the second electrical signal is used to drive the light-emitting unit layer 12 to generate a light stimulation signal.
[0064] The implant electrode 100 provided in the embodiment of the present application generates an electrical stimulation signal through the first metal layer 13, and generates a light stimulation signal through the light-emitting unit layer 12, thereby forming a photoelectric stimulation electrode, which integrates the light stimulation and electrical stimulation functions. It can combine the respective advantages of the light stimulation electrode and the electrical stimulation electrode, and restore a large range of cells through the electrical stimulation signal. If a single cell has not recovered its function, it can be precisely stimulated and treated through the light stimulation signal, thereby solving the problem of difficulty in taking into account both the stimulation treatment needs of a large range of cells and a single cell.
[0065] In addition, by connecting the first lead 30 and the second lead 40 to the control module 21 respectively, the light stimulation function and the electrical stimulation function can be independently controlled, thereby improving the treatment effect.
[0066] Exemplarily, the material of the first metal layer 13 includes non-corrosive metals such as gold or titanium to meet the material performance requirements for implantation in brain nerve tissue. The size of the implant portion 10 is limited to: no more than 5 mm in length, no more than 1 mm in width, and no more than 87 μm in thickness, wherein the length direction is the extension direction of the implant portion 10, and the thickness direction is the direction perpendicular to the plane where the light-emitting unit layer 12 is located. The implant portion 10 adopts a narrow and thin elongated strip structure, which can reduce the rejection reaction of human tissue.
[0067] Reference Figure 2 , Figure 3As shown, in one embodiment, the implantation portion includes a first substrate 11. Specifically, the light-emitting unit layer 12 and the first metal layer 13 are arranged on the same side of the first substrate 11 for easy processing. Among them, the light-emitting unit layer 12 and the first metal layer 13 correspond to the same first substrate 11, thereby saving costs. In another embodiment, the light-emitting unit layer 12 is located on one side of the first substrate 11, and the first metal layer 13 is located on one side of the other substrate. That is, the first metal layer 13 and the light-emitting unit layer 12 can share the first substrate 11 for joint preparation, or can be prepared separately.
[0068] In another embodiment, the light emitting unit layer 12 and the first metal layer 13 are disposed on opposite sides of the first substrate 11 , that is, the first metal layer 13 is located on a side of the first substrate 11 away from the light emitting unit layer 12 , that is, the back side.
[0069] Among them, reference Figure 6 As shown, the light emitting unit layer 12 includes a plurality of sub-pixels 120. Preferably, the plurality of sub-pixels 120 are arranged in a matrix.
[0070] Preferably, reference Figure 4 As shown, the light-emitting unit layer 12 includes an anode 121 , a cathode 122 and a light-emitting material 123 . The light-emitting material 123 is disposed between the anode 121 and the cathode 122 . The anode 121 is located on a side of the light-emitting material 123 close to the first substrate 11 .
[0071] Exemplarily, the light-emitting unit layer 12 may include an OLED (Organic Light-Emitting Diode) light-emitting unit, and the light-emitting material may include three colors: red, green, and blue. The light-emitting material is filled in the pixel space determined by the pixel definition layer and is used to make light-emitting units of corresponding colors, thereby forming red, green, and blue sub-pixels.
[0072] Reference Figure 5 As shown, in one embodiment, the implanted electrode 100 also includes a second metal layer 124, the second metal layer 124 is electrically connected to the light-emitting unit layer 12, the second metal layer 124 is located on the side of the light-emitting unit layer 12 away from the light-emitting surface, and the first metal layer 13 and the second metal layer 124 are prepared in the same layer.
[0073] Preferably, a portion of the second lead 40 is located on the second metal layer 124 .
[0074] Specifically, the first lead 30 includes a first implantation segment, which is located in the first metal layer 13 ; the second lead 40 includes a second implantation segment, which is located in the second metal layer 124 . The first implantation segment and the second implantation segment belong to the implantation part 10 .
[0075] Among them, the first metal layer 13 for generating electrical stimulation signals and the second lead 40 for transmitting electrical signals to the optical stimulation structure can be prepared in the same layer, which can save costs and realize independent control of electrical stimulation function and optical stimulation function.
[0076] Specifically, the driving circuit of the light-emitting unit layer 12 may be located in the second metal layer 124, and the second metal layer 124 is located between the first substrate 11 and the anode 121. An organic insulating layer is provided between the second metal layer 124 and the anode 121. When the first metal layer 13 and the anode 121 are located on the same side of the first substrate 11, an organic insulating layer is also provided on the first metal layer 13. The second metal layer 124 is electrically connected to the anode 121.
[0077] Reference Figure 1 , Figure 6 As shown, in one embodiment, the orthographic projection of the first metal layer 13 on the light-emitting unit layer 12 does not overlap with the sub-pixel 120. In particular, when the first metal layer 13 and the light-emitting unit layer 12 are located on the same side of the first substrate 11, the orthographic projection of the first metal layer 13 on the light-emitting unit layer 12 does not cover the sub-pixel 120, thereby avoiding blocking the output of the light signal and affecting the light stimulation signal.
[0078] Preferably, refer to Figure 6 As shown, in one embodiment, the orthographic projection of the first metal layer 13 on the light emitting unit layer 12 is located between adjacent sub-pixels 120. For example, the orthographic projection of the first metal layer 13 on the light emitting unit layer 12 is located in the gap between adjacent sub-pixels 120.
[0079] Preferably, refer to Figure 1 As shown, in another embodiment, the implant part 10 includes an implant end 101, which is located at one end of the implant part 10 away from the non-implant part 20, and the first metal layer 13 is located at the implant end 101. Specifically, the implant end 101 is a conical tip, and the first metal layer 13 is located at the maximum width of the implant end 101.
[0080] Reference Figure 7 , Figure 8 , Fig. 9 As shown, in another embodiment, the first metal layer 13 is located on a side of the first substrate 11 away from the light-emitting unit layer 12. The first metal layer 13 is located on the back side of the first substrate 11, does not affect the optical signal of the light-emitting unit layer 12, and the position of the first metal layer 13 on the back side of the first substrate 11 is not limited. For example, the first metal layer 13 is located at the implantation end 101, or the orthographic projection of the first metal layer 13 on the light-emitting unit layer 12 overlaps with the sub-pixel 120.
[0081] Preferably, a first insulating layer 14 is provided between the first substrate 11 and the light-emitting unit layer 12 , or a first buffer layer is provided between the first substrate 11 and the light-emitting unit layer 12 , or a first insulating layer 14 and a first buffer layer are provided between the first substrate 11 and the light-emitting unit layer 12 .
[0082] Preferably, a second insulating layer 15 is provided between the first metal layer 13 and the first substrate 11 , or a second buffer layer is provided between the first metal layer 13 and the first substrate 11 , or a second insulating layer 15 and a second buffer layer are provided between the first metal layer 13 and the first substrate 11 .
[0083] Reference Fig.10 , Fig.11 As shown, in one embodiment, the first metal layer 13 is located on a side of the light emitting unit layer 12 away from the first substrate 11. The first metal layer 13 is located on the light emitting side of the light emitting unit layer 12.
[0084] Preferably, the implantation part 10 further includes an encapsulation layer 16 , which is located on a side of the light emitting unit layer 12 away from the first substrate 11 , and the first metal layer 13 is located on a side of the encapsulation layer 16 away from the first substrate 11 .
[0085] Preferably, the orthographic projection of the first metal layer 13 on the light emitting unit layer 12 covers the sub-pixel 120 .
[0086] Preferably, the material of the first metal layer 13 includes indium tin oxide. The material of the first metal layer 13 is indium tin oxide (ITO), which has good electrical conductivity and light transmittance, and can achieve the electrical stimulation function while avoiding affecting the light stimulation function.
[0087] Reference Fig.12 As shown, in one embodiment, the first metal layer 13 includes an electrode point 130 for generating an electrical stimulation signal, and the electrode point 130 is connected to the first lead 30 .
[0088] Preferably, the first metal layer 13 includes a plurality of electrode points 130 .
[0089] Preferably, the plurality of electrode points 130 are arranged along the extension direction of the implant portion 10 , and the first lead wires 30 are connected to the electrode points 130 in a one-to-one correspondence.
[0090] Wherein, multiple electrode points 130 are independently stimulated in different implantation depth directions to achieve electrical stimulation in different depth directions.
[0091] Reference Figure 1 , Fig.13As shown, in one embodiment, the non-implanted part 20 further includes an electrode outer layer 22, and the electrode outer layer 22 is located between the implanted part 10 and the control module 21. The electrode outer layer 22 includes a third metal layer 220, the first lead 30 includes a first non-implanted segment, the second lead 40 includes a second non-implanted segment, and the first non-implanted segment and the second non-implanted segment are located in the third metal layer 220 and belong to the non-implanted part 20.
[0092] Preferably, the third metal layer 220 is prepared at the same layer as the first metal layer 13 .
[0093] Preferably, the electrode outer layer 22 includes a second substrate 221 and a second supporting film layer 222 , and the second substrate 221 is located between the second supporting film layer 222 and the third metal layer 220 .
[0094] Reference Fig.14 As shown, in one embodiment, the implantation portion 10 includes a first supporting film layer 17 , and the first supporting film layer 17 is located on a side of the first substrate 11 away from the first metal layer 13 .
[0095] Preferably, the second supporting film layer 222 is prepared in the same layer as the first supporting film layer 17 .
[0096] Preferably, the second substrate 221 is prepared in the same layer as the first substrate 11 .
[0097] Preferably, the second substrate 221 and the first substrate 11 both include two layers of polyimide films.
[0098] In one embodiment, the control module 21 includes a flexible printed circuit board, the flexible printed circuit board includes a bonding pin, and the first lead 30 and the second lead 40 are respectively connected to the bonding pin. The flexible printed circuit board is connected to an external power supply, and the internal first metal layer 13 can be independently controlled to generate an electrical stimulation signal and the light-emitting unit layer 12 can generate a light stimulation signal.
[0099] Preferably, the extending direction of the bonding pin is perpendicular to the plane where the light emitting unit layer 12 is located.
[0100] Based on the same inventive concept, another embodiment of the present application further provides a brain-computer interface device, which includes the implanted electrode 100 in the above embodiment.
[0101] A brain-computer interface device provided in this embodiment has an implanted electrode 100, which generates an electrical stimulation signal through the first metal layer 13, and generates a light stimulation signal through the light-emitting unit layer 12, forming a photoelectric stimulation electrode, which integrates the light stimulation function and the electrical stimulation function. The respective advantages of the light stimulation electrode and the electrical stimulation electrode can be combined to perform electrical stimulation recovery on a large range of cells. If a single cell has not recovered its function, precise stimulation treatment can be performed through the light stimulation signal, which solves the problem that it is difficult to take into account both the stimulation treatment needs of a large range of cells and a single cell.
[0102] Although the present application has been described in conjunction with specific embodiments thereof, many alternatives, modifications and variations of these embodiments will be apparent to those skilled in the art in light of the foregoing description.
[0103] It should be noted that the above describes some embodiments of the present application. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the above embodiments and still achieve the desired results. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.
[0104] The embodiments of the present application are intended to cover all such substitutions, modifications and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present application should be included in the scope of protection of the present application.
Claims
1. An implantable electrode, characterized in that: It comprises an implantation part and a non-implantation part, wherein the non-implantation part is located at one end of the implantation part; The implantation portion includes a light emitting unit layer and a first metal layer; The non-implanted portion includes a control module; The implanted electrode further comprises: A first lead, the first lead connecting the first metal layer and the control module, and used for receiving a first electrical signal on the control module, wherein the first electrical signal is used for driving the first metal layer to generate an electrical stimulation signal; A second lead is connected between the light-emitting unit layer and the control module, and is used to receive a second electrical signal from the control module, wherein the second electrical signal is used to drive the light-emitting unit layer to generate a light stimulation signal.
2. The implantable electrode according to claim 1, characterized in that The implantation part includes a first substrate, and the light emitting unit layer and the first metal layer are arranged on the same side or opposite sides of the first substrate; The light emitting unit layer includes a plurality of sub-pixels; Preferably, a plurality of said sub-pixels are arranged in a matrix; Preferably, the sub-pixel comprises an anode, a cathode and a light-emitting material, the light-emitting material is arranged between the anode and the cathode, and the anode is located on a side of the light-emitting material close to the first substrate.
3. The implantable electrode according to claim 1, characterized in that The implanted electrode includes a second metal layer, the second metal layer is electrically connected to the light-emitting unit layer, and is located on a side of the light-emitting unit layer away from the light-emitting surface; the second metal layer is prepared on the same layer as the first metal layer; Preferably, the second lead portion is located on the second metal layer.
4. The implantable electrode according to claim 2, characterized in that The orthographic projection of the first metal layer on the light-emitting unit layer has no overlap with the sub-pixel; Preferably, the orthographic projection of the first metal layer on the light-emitting unit layer is located between adjacent sub-pixels; Preferably, the implantation part comprises an implantation end, the implantation end is located at one end of the implantation part away from the non-implantation part, and the first metal layer is located at the implantation end.
5. The implantable electrode according to claim 2, characterized in that: The first metal layer is located on a side of the first substrate away from the light-emitting unit layer; Preferably, a first insulating layer and / or a first buffer layer is provided between the first substrate and the light-emitting unit layer; Preferably, a second insulating layer and / or a second buffer layer is provided between the first metal layer and the first substrate.
6. The implant electrode according to claim 2, characterized in that The first metal layer is located on a side of the light emitting unit layer away from the first substrate; Preferably, the implantation portion further comprises an encapsulation layer, the encapsulation layer is located on a side of the light emitting unit layer away from the first substrate, and the first metal layer is located on a side of the encapsulation layer away from the first substrate; Preferably, the orthographic projection of the first metal layer on the light-emitting unit layer covers the sub-pixel; Preferably, the material of the first metal layer includes indium tin oxide.
7. The implantable electrode according to claim 1, characterized in that The first metal layer includes an electrode point for generating the electrical stimulation signal, and the electrode point is connected to the first lead; Preferably, the first metal layer includes a plurality of the electrode points; Preferably, the plurality of electrode points are arranged along an extension direction of the implant portion, and the first lead wires are connected to the electrode points in a one-to-one correspondence.
8. The implantable electrode according to claim 1, characterized in that The non-implanted portion further comprises an electrode outer layer, wherein the electrode outer layer is located between the implanted portion and the control module; The electrode outer layer comprises a third metal layer, the first lead comprises a first non-implanted segment, the second lead comprises a second non-implanted segment, and the first non-implanted segment and the second non-implanted segment are located in the third metal layer; Preferably, the third metal layer is prepared in the same layer as the first metal layer; Preferably, the electrode outer layer further includes a second substrate and a second supporting film layer, and the second substrate is located between the second supporting film layer and the third metal layer.
9. The implant electrode according to claim 1, characterized in that The control module includes a flexible printed circuit board, the flexible printed circuit board includes a bonding pin, and the first lead and the second lead are respectively connected to the bonding pin; Preferably, the extending direction of the bonding pin is perpendicular to the plane where the light emitting unit layer is located.
10. A brain-computer interface device, characterized in that: Comprising the implantable electrode according to any one of claims 1-9.