A method for preparing and using an acrylic-based hyperbranched photoresist resin
By preparing acrylic-based hyperbranched photoresist resin, the problem of easy entanglement of linear resin polymers was solved, achieving high-resolution development effect, which is suitable for high-precision integrated circuit manufacturing.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- WANSIDE NEW MATERIAL TECH (ZHONGSHAN) CO LTD
- Filing Date
- 2025-02-06
- Publication Date
- 2026-07-07
AI Technical Summary
Among existing photoresists, linear resin polymers are prone to entanglement, resulting in poor development effect and low resolution, which makes it difficult to meet the needs of high-precision integrated circuit manufacturing.
Methacrylic acid, benzyl methacrylate, and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride were used as raw materials to form a linear polymer through double bond polymerization. Then, pentaerythritol triacrylate containing hydroxyl and alkenyl groups was added as a grafting agent to construct a hyperbranched structure and prepare an acrylic-based hyperbranched photoresist resin.
It improves the development effect of photoresist, resulting in high resolution, making it suitable for manufacturing higher precision integrated circuits. It also avoids side reactions and ensures the uniformity and purity of the molecular structure.
Smart Images

Figure CN119874998B_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of resin technology, specifically relating to a method for preparing and applying an acrylic-based hyperbranched photoresist resin. Background Technology
[0002] Photoresist, also known as photoresist, is a type of composite material sensitive to light or radiation, composed of resin polymers, photoinitiators, and additives. Its solubility, adhesion, and thermal stability change significantly before and after exposure. Currently, most resin polymers used to constitute photoresist are linear acrylic resins and phenolic resins. This leads to certain drawbacks in existing photoresists, limiting their practical application. This is because linear resin polymers are prone to molecular chain entanglement, which is detrimental to subsequent development. Molecular chain entanglement easily occurs at the boundary between exposed and unexposed areas, resulting in uneven cross-sections and low resolution. To address this issue, many existing technologies modify resin polymers to construct hyperbranched structures. These hyperbranched structures utilize their low entanglement, low viscosity, and multifunctionality to improve development. However, there are currently no reports on the preparation of acrylic hyperbranched resins, necessitating urgent technological improvements to overcome these bottlenecks. Summary of the Invention
[0003] To address the problems existing in the prior art, the present invention aims to provide a method for preparing and applying an acrylic-based hyperbranched photoresist resin. The invention creatively uses methacrylic acid, benzyl methacrylate, and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride as raw materials, allowing these three to polymerize based on double bonds to first form a linear polymer. Then, pentaerythritol triacrylate containing hydroxyl and alkenyl groups is added as a grafting agent. Based on the reaction between the anhydride and hydroxyl groups, a hyperbranched structure is constructed, thereby obtaining an acrylic-based hyperbranched photoresist resin. When used as a resin polymer to prepare a photoresist, it can achieve excellent development effects and high resolution, which is helpful for manufacturing integrated circuits with higher precision.
[0004] The objective of this invention can be achieved through the following technical solutions:
[0005] A method for preparing an acrylic-based hyperbranched photoresist resin, the method comprising the following steps:
[0006] (1) In the monitoring of infrared spectra under an inert gas atmosphere, propylene glycol methyl ether acetate, methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid dianhydride were mixed, and then an initiator solution was added dropwise while stirring at 85-100℃. After the addition was completed, the mixture was stirred at a constant temperature until the C=C peak of the infrared spectrum disappeared, thus obtaining component A;
[0007] (2) Add pentaerythritol triacrylate, catalyst and polymerization inhibitor to component A, then stir at 100-115℃ for 15-16h to mix, cool down to 80-85℃ and keep warm, then add pentaerythritol triacrylate dropwise while stirring, continue stirring at a constant temperature for 3-4h after the addition is complete, cool naturally to room temperature, purify, and the preparation is complete.
[0008] As a preferred technical solution of the present invention, the inert gas atmosphere in step (1) refers to a nitrogen atmosphere.
[0009] As a preferred technical solution of the present invention, the mass ratio of propylene glycol methyl ether acetate, methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid dianhydride in step (1) is 60-65:9-10:26-28:2.8-3.
[0010] As a preferred technical solution of the present invention, the dripping rate in step (1) is controlled at 18-20s / drop.
[0011] As a preferred embodiment of the present invention, the initiator solution in step (1) refers to a mixture obtained by stirring azobisisobutyronitrile and propylene glycol methyl ether acetate at a mass ratio of 4:96-98 for 10-15 minutes at room temperature; the amount of solute in the initiator solution is 0.8-1% of the sum of the amounts of methacrylic acid, benzyl methacrylate, and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride.
[0012] As a preferred embodiment of the present invention, the molar ratio of the first pentaerythritol triacrylate in step (2) to the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid dianhydride in step (1) is 1.8:1; the molar ratio of the first pentaerythritol triacrylate to the second pentaerythritol triacrylate is 1.8:0.25-0.3.
[0013] As a preferred embodiment of the present invention, the catalyst in step (2) is triphenylphosphine; the mass of the catalyst is 2% of the sum of the masses of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.
[0014] As a preferred embodiment of the present invention, the polymerization inhibitor in step (2) is p-hydroxyanisole; the mass of the polymerization inhibitor is 2% of the sum of the masses of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.
[0015] As a preferred technical solution of the present invention, the cooling rate in step (2) is 2-3℃ / min.
[0016] As a preferred technical solution of the present invention, the dripping rate in step (2) is controlled at 2-4 drops / s.
[0017] As a preferred technical solution of the present invention, the purification in step (2) refers to adding n-hexane until the content is 85-90wt%, filtering, taking the precipitate, washing with n-hexane, and finally vacuum drying at 20-25℃ until constant weight.
[0018] An application of an acrylic-based hyperbranched photoresist resin prepared by the method described above, wherein the acrylic-based hyperbranched photoresist resin is used in photoresist applications.
[0019] The beneficial effects of this invention are:
[0020] (1) This invention creatively uses methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid dianhydride as raw materials, so that the three are polymerized based on double bonds to first form a linear polymer, and then pentaerythritol triacrylate containing hydroxyl and alkenyl groups is added as a grafting agent. Based on the reaction between the anhydride and the hydroxyl group, a hyperbranched structure is constructed, thereby obtaining an acrylic-based hyperbranched photoresist resin. When it is used as a resin polymer to prepare a photoresist, it can obtain excellent development effect and high resolution, which helps to manufacture integrated circuits with higher precision.
[0021] (2) This invention creatively prepares an acrylic-based hyperbranched photoresist resin, which, as a resin polymer in photoresist, can effectively solve the problems of poor development effect and low resolution caused by the easy entanglement of molecular chains in linear polymers. It has a very good market application prospect. In addition, based on the fact that the construction of hyperbranched structure needs to be carried out at a high temperature, this invention also creatively adds pentaerythritol triacrylate in two parts. The first part is to directly add most of the pentaerythritol triacrylate, and the second part is to add the remaining pentaerythritol triacrylate by dripping it at a lower temperature. This can effectively avoid the occurrence of side reactions, so that the hydroxyl groups basically only react with the acid anhydride and do not esterify with the carboxyl group, thereby ensuring the uniformity between the molecular structures, improving the purity, and correspondingly obtaining a more superior technical effect. Attached Figure Description
[0022] To facilitate understanding by those skilled in the art, the present invention will be further described below with reference to the accompanying drawings.
[0023] Figure 1 This is a flowchart illustrating the preparation process of the acrylic-based hyperbranched photoresist resin in Example 3 of the present invention.
[0024] Figure 2 The infrared spectra of the intermediate and final products of the acrylic-based hyperbranched photoresist resin in Example 3 of the present invention are shown. Detailed Implementation
[0025] To further illustrate the technical means and effects of the present invention in achieving the intended purpose, the following detailed description of the specific implementation methods, structures, features and effects of the present invention, in conjunction with the accompanying drawings and preferred embodiments, is provided.
[0026] Example 1
[0027] A method for preparing an acrylic-based hyperbranched photoresist resin, the method comprising the following steps:
[0028] (1) In the monitoring of infrared spectrum under an inert gas atmosphere, propylene glycol methyl ether acetate, methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid dianhydride were mixed and then an initiator solution was added dropwise while stirring at 85°C. After the addition was completed, the mixture was stirred at a constant temperature until the C=C peak of the infrared spectrum disappeared, and component A was obtained.
[0029] (2) Add pentaerythritol triacrylate, catalyst and polymerization inhibitor to component A, then stir at 100°C for 15 h to mix, cool down to 80°C and keep warm, then add pentaerythritol triacrylate dropwise while stirring, continue stirring at constant temperature for 3 h after the addition is complete, cool naturally to room temperature, purify, and the preparation is complete.
[0030] The inert gas atmosphere mentioned in step (1) refers to a nitrogen atmosphere.
[0031] The mass ratio of propylene glycol methyl ether acetate, methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid dianhydride in step (1) is 60:9:26:2.8.
[0032] The dripping rate in step (1) is controlled at 18 s / drop.
[0033] The initiator solution mentioned in step (1) refers to a mixture obtained by stirring azobisisobutyronitrile and propylene glycol methyl ether acetate at a mass ratio of 4:96 for 10 min at room temperature; the amount of solute in the initiator solution is 0.8% of the sum of the amounts of methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride.
[0034] In step (2), the molar ratio of the first pentaerythritol triacrylate to the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid dianhydride in step (1) is 1.8:1; and the molar ratio of the first pentaerythritol triacrylate to the second pentaerythritol triacrylate is 1.8:0.25.
[0035] The catalyst in step (2) is triphenylphosphine; the mass of the catalyst is 2% of the sum of the masses of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.
[0036] The polymerization inhibitor in step (2) is p-hydroxyanisole; the mass of the polymerization inhibitor is 2% of the sum of the masses of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.
[0037] The cooling rate in step (2) is 2℃ / min.
[0038] The dripping rate in step (2) is controlled at 2 drops / s.
[0039] The purification step (2) refers to adding n-hexane until the content is 85 wt%, filtering, taking the precipitate, washing it with n-hexane, and finally drying it under vacuum at 20°C until constant weight.
[0040] An application of an acrylic-based hyperbranched photoresist resin prepared by the method described above, wherein the acrylic-based hyperbranched photoresist resin is used in photoresist applications.
[0041] Example 2
[0042] A method for preparing an acrylic-based hyperbranched photoresist resin, the method comprising the following steps:
[0043] (1) In the monitoring of infrared spectrum under an inert gas atmosphere, propylene glycol methyl ether acetate, methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid dianhydride were mixed, and then an initiator solution was added dropwise while stirring at 100°C. After the addition was completed, the mixture was stirred at a constant temperature until the C=C peak of the infrared spectrum disappeared, and component A was obtained.
[0044] (2) Add pentaerythritol triacrylate, catalyst and polymerization inhibitor to component A, then stir at 115°C for 16 h to mix, cool down to 85°C and keep warm, then add pentaerythritol triacrylate dropwise while stirring, continue stirring at constant temperature for 4 h after the dropwise addition is completed, cool naturally to room temperature, purify, and the preparation is complete.
[0045] The inert gas atmosphere mentioned in step (1) refers to a nitrogen atmosphere.
[0046] The mass ratio of propylene glycol methyl ether acetate, methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid dianhydride in step (1) is 65:10:28:3.
[0047] The dripping rate in step (1) is controlled at 20 s / drop.
[0048] The initiator solution mentioned in step (1) refers to a mixture obtained by stirring azobisisobutyronitrile and propylene glycol methyl ether acetate at a mass ratio of 4:98 for 15 minutes at room temperature; the amount of solute in the initiator solution is 1% of the sum of the amounts of methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride.
[0049] In step (2), the molar ratio of the first pentaerythritol triacrylate to the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid dianhydride in step (1) is 1.8:1; and the molar ratio of the first pentaerythritol triacrylate to the second pentaerythritol triacrylate is 1.8:0.3.
[0050] The catalyst in step (2) is triphenylphosphine; the mass of the catalyst is 2% of the sum of the masses of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.
[0051] The polymerization inhibitor in step (2) is p-hydroxyanisole; the mass of the polymerization inhibitor is 2% of the sum of the masses of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.
[0052] The cooling rate in step (2) is 3℃ / min.
[0053] The dripping rate in step (2) is controlled at 4 drops / s.
[0054] The purification step (2) refers to adding n-hexane until the content is 90 wt%, filtering, taking the precipitate, washing it with n-hexane, and finally drying it under vacuum at 25°C until constant weight.
[0055] An application of an acrylic-based hyperbranched photoresist resin prepared by the method described above, wherein the acrylic-based hyperbranched photoresist resin is used in photoresist applications.
[0056] Example 3
[0057] A method for preparing an acrylic-based hyperbranched photoresist resin, the method comprising the following steps:
[0058] (1) In the monitoring of infrared spectrum under an inert gas atmosphere, propylene glycol methyl ether acetate, methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid dianhydride were mixed, and then an initiator solution was added dropwise while stirring at 100°C. After the addition was completed, the mixture was stirred at a constant temperature until the C=C peak of the infrared spectrum disappeared, and component A was obtained.
[0059] (2) Add pentaerythritol triacrylate, catalyst and polymerization inhibitor to component A, then stir at 100°C for 15.5 h to mix, cool down to 83°C and keep warm, then add pentaerythritol triacrylate dropwise while stirring, continue stirring at constant temperature for 3.5 h after the addition is complete, cool naturally to room temperature, purify, and the preparation is complete.
[0060] The inert gas atmosphere mentioned in step (1) refers to a nitrogen atmosphere.
[0061] The mass ratio of propylene glycol methyl ether acetate, methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid dianhydride in step (1) is 63:9.5:27:2.9.
[0062] The dripping rate in step (1) is controlled at 19 s / drop.
[0063] The initiator solution mentioned in step (1) refers to a mixture obtained by stirring azobisisobutyronitrile and propylene glycol methyl ether acetate at a mass ratio of 4:97 for 13 minutes at room temperature; the amount of solute in the initiator solution is 0.9% of the sum of the amounts of methacrylic acid, benzyl methacrylate, and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride.
[0064] In step (2), the molar ratio of the first pentaerythritol triacrylate to the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid dianhydride in step (1) is 1.8:1; and the molar ratio of the first pentaerythritol triacrylate to the second pentaerythritol triacrylate is 1.8:0.28.
[0065] The catalyst in step (2) is triphenylphosphine; the mass of the catalyst is 2% of the sum of the masses of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.
[0066] The polymerization inhibitor in step (2) is p-hydroxyanisole; the mass of the polymerization inhibitor is 2% of the sum of the masses of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.
[0067] The cooling rate in step (2) is 2.5℃ / min.
[0068] The dripping rate in step (2) is controlled at 3 drops / s.
[0069] The purification step (2) refers to adding n-hexane until the content is 88 wt%, filtering, taking the precipitate, washing it with n-hexane, and finally vacuum drying it at 23°C until constant weight.
[0070] An application of an acrylic-based hyperbranched photoresist resin prepared by the method described above, wherein the acrylic-based hyperbranched photoresist resin is used in photoresist applications.
[0071] Comparative Example 1
[0072] Based on Example 3, step (2) is changed to adding pentaerythritol triacrylate, catalyst and polymerization inhibitor to component A, then stirring at 100°C for 15.5h, cooling to 83°C, keeping warm, then adding pentaerythritol triacrylate, continuing to stir at a constant temperature for 3.5h, naturally cooling to room temperature, and purifying, thus completing the preparation; the rest remains unchanged.
[0073] Comparative Example 2
[0074] Based on Example 3, step (2) is changed to adding pentaerythritol triacrylate, catalyst and polymerization inhibitor to component A, then stirring at 100°C for 15.5 h to mix, then adding pentaerythritol triacrylate dropwise while stirring, and continuing to stir at a constant temperature for 3.5 h after the addition is completed, then naturally cooling to room temperature, purifying, and thus the preparation is complete; the rest remains unchanged.
[0075] Comparative Example 3
[0076] Based on Example 3, step (2) is changed to adding pentaerythritol triacrylate, catalyst and polymerization inhibitor to component A, then stirring at 100°C for 19 hours, naturally cooling to room temperature, and purifying to complete the preparation; the molar ratio of pentaerythritol triacrylate in step (2) to bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid dianhydride in step (1) is 2.08:1; the catalyst in step (2) is triphenylphosphine; the mass of the catalyst is 2% of the mass of pentaerythritol triacrylate; the polymerization inhibitor in step (2) is p-hydroxyanisole; the mass of the polymerization inhibitor is 2% of the mass of pentaerythritol triacrylate; the rest remain unchanged.
[0077] Test Example 1
[0078] Development effect test:
[0079] The acrylic-based hyperbranched photoresist resins prepared in Example 3 and Comparative Examples 1-3 were used to prepare photoresists, respectively. The steps were as follows: The acrylic-based hyperbranched photoresist resin and propylene glycol methyl ether acetate were mixed at room temperature in the dark for 60 min to obtain a mixture with a solid content of 40 wt%. Then, by weight percentage, 68% of the mixture, 3% of the photoinitiating system, 15% of tripropylene glycol diacrylate and 14% of butyl acetate were mixed at room temperature in the dark for 30 min to obtain the final product. The photoinitiating system included photoinitiator 907 and photoinitiator ITX. The mass ratio of photoinitiator 907 to photoinitiator ITX was 2:1.
[0080] The aforementioned photoresist was coated onto a copper plate and then dried at 75°C for 30 minutes to form a dry film with a thickness of 30 μm. The film was then exposed through a mask at an exposure energy of 100 mJ / cm². 2 Finally, the sample was developed at 30°C using a 1% sodium carbonate solution until the unexposed portion was completely washed away. It was then washed with deionized water and vacuum dried at 25°C until constant weight. The sample was then observed under a scanning electron microscope, and the resolution was recorded.
[0081] Table 1. Results of Development Effect Test
[0082] Resolution / μm Example 3 40 Comparative Example 1 44 Comparative Example 2 43 Comparative Example 3 45
[0083] As can be seen from the comparison of Test Example 1, Example 3 and Comparative Examples 1-3, the acrylic-based hyperbranched photoresist resin prepared by the present invention can have a higher resolution after being prepared as a photoresist, which is higher than that of general industrial photoresists (50-70μm).
[0084] against Figure 1 Analysis:
[0085] This is a flowchart illustrating the preparation process of the acrylic-based hyperbranched photoresist resin in Example 3 of the present invention.
[0086] against Figure 2 Analysis:
[0087] The images show the infrared spectra of the intermediate and final products in the preparation of acrylic hyperbranched photoresist resin in Example 3 of this invention. It can be seen that the C=C peak of intermediate product (A) disappears, indicating that the C=C bonds react to form resin, and a strong anhydride peak appears, indicating the presence of dianhydride groups. The C=C peak of final product (B) reappears, while the 1890 cm⁻¹ peak... -1 The nearby strong acid anhydride peaks completely disappeared, which proved that the target product was successfully synthesized.
[0088] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present invention. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the scope of the present invention.
Claims
1. A method for preparing an acrylic-based hyperbranched photoresist resin, characterized in that: The preparation method includes the following steps: (1) In the monitoring of infrared spectra under an inert gas atmosphere, propylene glycol methyl ether acetate, methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid dianhydride were mixed, and then an initiator solution was added dropwise while stirring at 85-100℃. After the addition was completed, the mixture was stirred at a constant temperature until the C=C peak of the infrared spectrum disappeared, thus obtaining component A; (2) Add pentaerythritol triacrylate, catalyst and polymerization inhibitor to component A, then stir at 100-115℃ for 15-16h to mix, cool down to 80-85℃, keep warm, then add pentaerythritol triacrylate dropwise while stirring, continue stirring at constant temperature for 3-4h after the dropwise addition is completed, cool naturally to room temperature, purify, and the preparation is complete. In step (1), the mass ratio of propylene glycol methyl ether acetate, methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid dianhydride is 60-65:9-10:26-28:2.8-3.
2. The method for preparing an acrylic-based hyperbranched photoresist resin according to claim 1, characterized in that: The initiator solution mentioned in step (1) refers to a mixture obtained by stirring azobisisobutyronitrile and propylene glycol methyl ether acetate at a mass ratio of 4:96-98 for 10-15 minutes at room temperature; the amount of solute in the initiator solution is 0.8-1% of the sum of the amounts of methacrylic acid, benzyl methacrylate and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride.
3. The method for preparing an acrylic-based hyperbranched photoresist resin according to claim 1, characterized in that: In step (2), the molar ratio of the first pentaerythritol triacrylate to the bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid dianhydride in step (1) is 1.8:1; the molar ratio of the first pentaerythritol triacrylate to the second pentaerythritol triacrylate is 1.8:0.25-0.
3.
4. The method for preparing an acrylic-based hyperbranched photoresist resin according to claim 1, characterized in that: The catalyst in step (2) is triphenylphosphine; the mass of the catalyst is 2% of the sum of the masses of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.
5. The method for preparing an acrylic-based hyperbranched photoresist resin according to claim 1, characterized in that: The polymerization inhibitor in step (2) is p-hydroxyanisole; the mass of the polymerization inhibitor is 2% of the sum of the masses of the first pentaerythritol triacrylate and the second pentaerythritol triacrylate.
6. The method for preparing an acrylic-based hyperbranched photoresist resin according to claim 1, characterized in that: The cooling rate in step (2) is 2-3℃ / min.
7. The method for preparing an acrylic-based hyperbranched photoresist resin according to claim 1, characterized in that: The dripping rate in step (2) is controlled at 2-4 drops / s.
8. The method for preparing an acrylic-based hyperbranched photoresist resin according to claim 1, characterized in that: The purification step (2) refers to adding n-hexane until the content is 85-90 wt%, filtering, taking the precipitate, washing it with n-hexane, and finally vacuum drying it at 20-25℃ until constant weight.
9. The application of an acrylic-based hyperbranched photoresist resin prepared by the preparation method according to any one of claims 1-8, characterized in that: The acrylic-based hyperbranched photoresist resin is used in photoresists.