Multistage nano metal network touch module and preparation method thereof

Abstract

The invention provides a multi-stage nano metal network touch module and a preparation method thereof, the multi-stage nano metal network touch module comprises a substrate and a touch function layer, the touch function layer sequentially comprises a first touch electrode, an insulating layer and a second touch electrode which are located on the first surface of the substrate, the first touch electrode and the second touch electrode both adopt multi-stage nano metal networks, and the insulating layer is arranged on the first surface of the substrate. Comprising a connecting channel and a node channel; the optical absorptivity of the node channels is smaller than the optical absorptivity of the connecting channels. Through the jumper bridging technology and the special design of the first node channel and the second node channel, the point-shaped appearance formed by traditional jumper bridging is effectively avoided, the formed single-face F2 structure touch module can ensure smooth current transmission of electrodes of a touch screen, and the touch sensitivity and accuracy are improved. The display device has important significance for improving user experience, has the characteristics of being ultra-light and ultra-thin, and can effectively improve the display definition at the same time.

Description

Technical Field

[0001] The present invention relates to the field of touch display modules, and in particular to a multi-level nano-metal network touch module and a preparation method thereof, which has the advantages of being ultra-light, ultra-thin and highly cost-effective. Background Art

[0002] With the advancement of science and technology, touch screen technology has been widely used, especially in smart phones, smart homes, car touch displays, smart offices, smart medical care, education, etc. Ultra-light and ultra-thin touch screens have become a general development trend of human-computer interaction devices.

[0003] Chinese patent application CN202010222751.3 discloses "Touch module, touch display screen and method for manufacturing touch display screen", wherein the touch module includes: a touch layer, the touch layer is a single-layer structure and includes n columns of touch units, each column of touch units includes a first unit and a second unit, the first unit includes a first electrode column and m first electrode wires, the first electrode column includes m first electrodes, each first electrode wire is respectively connected to a first electrode to form m first signal lines, the second unit includes a second electrode column and j second electrode wires, the second electrode column includes m groups of second electrode units, the m groups of second electrode units are arranged one by one opposite to the m first electrodes, each group of second electrode units includes j second electrodes, and each second electrode wire is respectively connected to a second electrode in each group of second electrode units to form j second signal lines.

[0004] Chinese patent application CN201922418313.X discloses a "touch module and touch display device", which provides a touch module to solve the technical problems in the prior art that there is obvious color difference between the display area and the frame area when the screen is off, and the appearance consistency is poor.

[0005] The traditional single-sided F2 structure touch screen is manufactured by a conventional jumper bridge method, which is difficult to manufacture. Due to the multi-layer structure of the jumper bridge position, it is very easy to form a visible dotted appearance. The multi-level nano-metal network touch module proposed in this application has the characteristics of ultra-lightness and ultra-thinness, and can effectively improve the display clarity due to the low haze, high transmittance, and high-definition optical properties of the multi-level nano-metal network itself and the special design of the first node channel and the second node channel. Summary of the invention

[0006] The purpose of this application is to provide a multi-level nano-metal network touch module and its preparation method, which can ensure smooth current transmission of touch screen electrodes through jumper bridge technology, and improve touch sensitivity and accuracy. This is of great significance for improving user experience. At the same time, there is only one substrate layer, which has the advantages of ultra-light and ultra-thin, and can effectively avoid the dotted appearance formed by traditional jumper bridges, effectively improving the clarity of the display.

[0007] The present invention provides a multi-level nano-metal network touch module. The multi-level nano-metal network has the characteristics of low haze, high light transmittance and high clarity. The single-sided F2 structure touch module formed by the multi-level nano-metal network has the characteristics of ultra-lightness and ultra-thinness, and can effectively improve the display clarity.

[0008] To achieve the above-mentioned invention object, the present application provides a multi-level nano-metal network touch module, comprising:

[0009] A substrate, wherein the substrate is a flexible substrate or a rigid substrate, and the substrate comprises a first surface and a second surface; and

[0010] A touch function layer, the touch function layer sequentially comprising:

[0011] a first touch electrode located on the first surface of the substrate, wherein the first touch electrode adopts a multi-level nanometal network and includes a first connection channel and a first node channel, and the first connection channel and the first node channel are arranged at intervals;

[0012] an insulating layer, the insulating layer being located above the first node channel and completely or partially covering the first node channel; and

[0013] A second touch electrode, wherein the second touch electrode adopts a multi-level nanometal network, including a second connection channel and a second node channel; the second connection channel and the first touch electrode are located in the same layer; the second node channel is located on the upper side of the insulating layer, the width of the second node channel is less than or equal to the width of the insulating layer, and the second node channel is completely not in contact with the first node channel and the first connection channel, and is electrically insulated; the second node channel is in contact with the second connection channel to form a second touch electrode;

[0014] The optical absorptivity of the first node channel and the second node channel is less than the optical absorptivity of the first connection channel or the second connection channel.

[0015] As an improvement of the above technical solution, the light transmittance of the first connecting channel is equal to the light transmittance of the second connecting channel.

[0016] As an improvement of the above technical solution, the transmittance of the first node channel is 1 / 2 of the transmittance of the first connecting channel; the transmittance of the second node channel is 1 / 2 of the transmittance of the second connecting channel, which can eliminate the visual dotted appearance formed when the nodes overlap due to the lower transmittance at the nodes.

[0017] As an improvement of the above technical solution, the second surface of the substrate is provided with an anti-glare layer, and the hardness of the anti-glare layer is greater than 1H.

[0018] As an improvement of the above technical solution, the substrate is a hardened substrate, the hardened layer is located on the second surface of the substrate, and its hardness is greater than 1H.

[0019] As an improvement of the above technical solution, the first connecting channel and the second connecting channel are in a grid shape; the first node channel and the second node channel are in a wire grid shape and are arranged vertically, and the line width of the first node channel wire grid is equal to the multi-level nanometal network line width of the first connecting channel in the direction of the first touch electrode; the line width of the second node channel wire grid is equal to the multi-level nanometal network line width of the second connecting channel in the direction of the second touch electrode.

[0020] As an improvement of the above technical solution, the first connecting channel, the second connecting channel, the first node channel and the second node channel all adopt a grid shape, and the line width of the multi-level nanometal network of the first connecting channel is larger than the line width of the multi-level nanometal network of the first node channel; the line width of the multi-level nanometal network of the second connecting channel is larger than the line width of the multi-level nanometal network of the second node channel.

[0021] As an improvement of the above technical solution, the first connecting channel, the second connecting channel, the first node channel and the second node channel all adopt a grid shape, and the multi-level nano-metal network line density of the first connecting channel is greater than the multi-level nano-metal network line density of the first node channel; the multi-level nano-metal network line density of the second connecting channel is greater than the multi-level nano-metal network line density of the second node channel.

[0022] The present application also provides a method for preparing the multi-level nano-metal network touch module according to claims 1 to 8, the steps comprising:

[0023] a) etching a pattern on the surface of the metal nanowire transparent conductive film to form a second connecting channel between the first touch electrode and the second touch electrode;

[0024] b) preparing an insulating layer on the upper side of the first node channel of the first touch electrode so as to completely cover the first node channel of the first touch electrode in the direction of the second touch electrode and not completely cover the second connection channel of the second touch electrode;

[0025] c) preparing a second touch electrode second node channel on the insulating layer.

[0026] As an improvement of the above technical solution, the etching method of the etching pattern includes: laser etching, yellow light etching and / or wet etching.

[0027] As an improvement of the above technical solution, the preparation of the edge lines of the first touch electrode and the second touch electrode is also included, including: etching of the first touch electrode and the second connecting channel by one-piece molding of a low-resistance film, etching the edge lines of the first touch electrode and the second touch electrode at the same time; screen printing of silver paste, by additional screen printing of silver paste and etching of the edge lines; or

[0028] Inkjet printing edge lines, the edge lines are formed by inkjet printing conductive ink.

[0029] In practical applications, the multi-level nano-metal network states used by the first touch electrode first node channel and the second touch electrode second node channel can be combined at will. For example, a multi-level nano-metal network wire grid state is combined with a multi-level nano-metal network mesh state with narrow line width, or a multi-level nano-metal network wire grid state is combined with a multi-level nano-metal network mesh state with low density, or a multi-level nano-metal network mesh state with narrow line width is combined with a multi-level nano-metal network mesh state with low density.

[0030] In practical applications, the multi-level nanometal network states used by the first node channel and the second node channel can be in various styles. For example, a wire grid state with narrow line width and small multi-level nanometal network mesh density, or a wire grid state with wide line width and small multi-level nanometal network mesh density, or a wire grid state with narrow line width and large multi-level nanometal network mesh density, or a non-periodic wire grid state with different line widths and different mesh densities, or a grid state with narrow line width and small multi-level nanometal network mesh density, or a grid state with wide line width and small multi-level nanometal network mesh density, or a grid state with narrow line width and large multi-level nanometal network mesh density, or a non-periodic grid state with different line widths and different mesh densities, etc. The multi-level nanometal network states used by the first touch electrode first node channel and the second touch electrode second node channel can be arbitrarily combined from the above states.

[0031] The line width of the multi-level nanometal network is 3-50μm, the line spacing is 60-1000μm, the duty cycle is 45-96%, the width of the conductive channel of the first touch electrode and the second touch electrode is 0.05-15mm, and there is an insulating area between two adjacent conductive channels, and the width of the insulating area is 0.1-10mm.

[0032] The substrate is an anti-glare substrate, the anti-glare layer is located on the second surface of the substrate, and the hardness of the anti-glare layer is greater than 1H.

[0033] The substrate is a hardened substrate, the hardened layer is located on the second surface of the substrate, and its hardness is greater than 1H.

[0034] The substrate is an anti-glare substrate or a hardened substrate, and the second surface is a high-hardness surface. When the second surface is placed on the outer surface, it can be directly used as a cover plate without the need for an additional cover plate.

[0035] The flexible substrate material includes one of polyester (PET), polypropylene (PP), triacetate (TAC), cycloolefin polymer (COP), colorless polyimide (CPI) and polyethylene (PE), and optionally includes a post-processed substrate, and the post-processing method includes but is not limited to one or more of anti-reflection treatment, anti-reflection treatment, hardening treatment, and anti-glare treatment. The thickness of the substrate is 10-300μm.

[0036] The multi-level nano-metal network touch module also includes a cover plate and a bonding adhesive for bonding the cover plate and the substrate.

[0037] The multi-level nano-metal network has the characteristics of low haze, high light transmittance and high clarity, and can effectively avoid reflection and scattering of light emitted from the display module, thereby improving display clarity.

[0038] The method for preparing an insulating layer is to form a transparent insulating layer on the surface of a film layer forming a first touch electrode and a second touch electrode second connecting channel by sputtering, evaporation, coating, etc., and further coat it with photoresist, and then perform exposure and development treatment, and then etch away the part to be removed by solution corrosion, retain the part above the first node channel of the first touch electrode, and use ion reaction or other mechanical methods to strip and remove the photoresist material.

[0039] The method for preparing the second node channel of the second touch electrode comprises forming a conductive layer of the second node channel of the second touch electrode on the surface of the film layer on which the insulating layer has been formed by sputtering, evaporation, coating, etc., and further coating the conductive layer with photoresist, then performing exposure and development treatment, and then etching away the portion to be removed by solution corrosion, retaining the portion above the first node channel of the first touch electrode, and stripping and removing the photoresist material by ion reaction or other mechanical methods.

[0040] The method for preparing the insulating layer and the second node channel of the second touch electrode prepares the insulating layer and the second node channel of the second touch electrode in alignment by precision inkjet printing, silk screen spraying, brushing, etc.

[0041] The advantages of this application are: the multi-level nano-metal network touch module and its preparation method of this application effectively avoid the dotted appearance formed by traditional jumper bridges through jumper bridge technology and special design of the first node channel and the second node channel, and the single-sided F2 structure touch module formed can ensure smooth current transmission of the touch screen electrode and improve the sensitivity and accuracy of touch. This is of great significance to improving user experience, and it has the characteristics of ultra-light and ultra-thin, and can effectively improve display clarity. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The same reference numerals in the drawings represent the same or similar components. For ease of understanding, some components in the drawings are infinitely enlarged. The specific shapes in the drawings have nothing to do with the shape information of the actual components and are only for ease of identification and description. Obviously, those skilled in the art can obtain other drawings based on these drawings without any creative work.

[0043] Figure 1 This is a schematic diagram of the structure of the touch module of the present invention;

[0044] Figure 2a It is a schematic diagram of a first touch electrode 20 in an embodiment of the present invention; it includes a first touch electrode connection channel 201 and a first touch electrode node channel 202;

[0045] Figure 2b This is a schematic diagram of etching a pattern on the surface of the metal nanowire transparent conductive film to form a first touch electrode 20 and a second touch electrode second connecting channel 211 in one embodiment of the present invention;

[0046] Figure 2c is a schematic diagram of a second touch electrode 21 in one embodiment of the present invention;

[0047] Figure 3a It is a schematic diagram of a first touch electrode 20 ′ in another embodiment of the present invention, comprising a first touch electrode first connection channel 201 ′ and a first touch electrode first node channel 202 ′;

[0048] Figure 3b This is a schematic diagram of etching a pattern on the surface of the metal nanowire transparent conductive film to form a pattern of the first touch electrode 20 ′ and the second touch electrode second connecting channel 211 ′ in another embodiment of the present invention;

[0049] Figure 3c It is a schematic diagram of a second touch electrode 21 ′ in another embodiment of the present invention;

[0050] Figure 4a It is a schematic diagram of a first touch electrode 20 ″ in another embodiment of the present invention, comprising a first touch electrode first connection channel 201 ″ and a first touch electrode first node channel 202 ″;

[0051] Figure 4b It is a schematic diagram of etching a pattern on the surface of the metal nanowire transparent conductive film to form a pattern of a first touch electrode 20″ and a second touch electrode second connecting channel 211″ in another embodiment of the present invention;

[0052] Figure 4c It is a schematic diagram of a second touch electrode 21″ in another embodiment of the present invention;

[0053] Figure 5 It is a schematic cross-sectional view of the touch function layer pattern structure of the present invention in the viewing direction of the first touch electrode.

[0054] Figure 6 It is a schematic cross-sectional view of the touch function layer pattern structure of the present invention in the viewing direction of the second touch electrode.

[0055] Figure 7 This is a schematic diagram of the preparation process of the second touch electrode of the touch module of the present invention. A covering insulating layer 22 is prepared on the surface of the first node channel 202 (202′ or 202″) of the first touch electrode, so that the insulating layer completely covers the first node channel 202 (202′ or 202″) of the first touch electrode in the direction of the second touch electrode while not completely covering the second touch electrode second connection channel 211 (211′ or 211″). Then, a second touch electrode second node channel 212 (212′ or 212″) is prepared on the surface of the insulating layer. Both sides of the second node channel 212 (212′ or 212″) of the second touch electrode are in contact with the second connection channel of the second touch electrode, and are completely not in contact with the first connection channel of the first touch electrode, and are completely not in contact with the first node channel of the first touch electrode.

[0056] Figure 8 This is a microscope photo of the multi-level nano-metal network used in the first touch electrode and the second touch electrode of the present invention.

[0057] Reference numerals:

[0058] 00 Multi-level nano-metal network touch module

[0059] 1 is substrate 2 is touch function layer

[0060] 20 (20' or 20") is a first touch electrode

[0061] 201 (201', 201") is the first connection channel of the first touch electrode

[0062] 202 (202', 202") is the first node channel of the first touch electrode

[0063] 21 (21', 21") is a second touch electrode

[0064] 211 (211', 211") is the second connection channel of the second touch electrode

[0065] 212 (212', 212") is the second node channel of the second touch electrode

[0066] 22 is an insulating layer DETAILED DESCRIPTION

[0067] The following are examples of the present invention. It should be clear to those skilled in the art that the examples listed are only a part of the present invention and should not be regarded as specific limitations of the present invention.

[0068] Example 1

[0069] Figure 1 Schematic diagram of the structure of the multi-level nano-metal network touch module 00 of the present invention, including: a substrate 1 and a touch function layer 2. Among them, the schematic diagram of the first touch electrode 20, as shown in FIG. Figure 2a As shown, it includes a first touch electrode first connection channel 201 and a first node channel 202; Figure 2b This is a schematic diagram of etching a pattern on the surface of the metal nanowire transparent conductive film to form a pattern of the first touch electrode 20 and the second touch electrode second connecting channel 211 according to the present invention; Figure 2c FIG. 2 is a schematic diagram of the second touch electrode 21 of the present invention.

[0070] A multi-level nano-metal network touch module, comprising:

[0071] Substrate 1: includes a flexible substrate and a rigid substrate, wherein the substrate includes a first surface and a second surface;

[0072] Touch function layer 2, including:

[0073] A first touch electrode: located on the first surface of the substrate, the first touch electrode adopts a multi-level nanometal network, including a first connection channel 201 and a first node channel 202, the first connection channel and the first node channel are arranged at intervals, the first connection channel adopts a multi-level nanometal network grid shape, the first node channel multi-level nanometal network adopts a wire grid state, and the light transmittance of the first connection channel is less than the light transmittance of the first node channel;

[0074] Insulation layer 22;

[0075] Second touch electrode 21: The second touch electrode includes a second connection channel 211 and a second node channel 212. The second touch electrode adopts a multi-level nanometal network. The second connection channel of the second touch electrode is located in the same layer as the first touch electrode. The second connection channel of the second touch electrode adopts a multi-level nanometal network grid state. The second node channel of the second touch electrode is located on the upper side of the insulating layer and adopts a multi-level nanometal network wire grid state. It completely covers the insulating layer in the direction of the second touch electrode and contacts with the second connection channel of the second touch electrode to form a second touch electrode. The transmittance of the second node channel of the second touch electrode is greater than the transmittance of the second connection channel of the second touch electrode. Among them, the microscope picture of the multi-level nanometal network is as follows: Figure 8 As shown, the grid state is presented. Figure 8 The enlarged image on the right shows the microscopic morphology of each grid line itself, and each grid line contains disordered metal nanowires. The first touch electrode and the second touch electrode of the present application both use a multi-level nanometal network, and a special grid structure is designed in the first node channel of the first touch electrode and the second node channel of the second touch electrode.

[0076] The substrate is used as both the substrate and the cover of the touch module. The multi-level nano-metal network touch module is ultra-light and ultra-thin.

[0077] Preferably, the substrate is an anti-glare substrate, the anti-glare layer is located on the second surface of the substrate, and the hardness of the anti-glare layer is greater than 1H.

[0078] Preferably, the substrate is a hardened substrate, the hardened layer is located on the second surface of the substrate, and its hardness is greater than 1H.

[0079] The multi-level nano-metal network has the characteristics of low haze, high light transmittance and high clarity, which can effectively avoid reflection and scattering of the light emitted by the display module and improve the display clarity. At the same time, the first node channel of the first touch electrode and the second node channel of the second touch electrode both adopt the multi-level nano-metal network wire grid state, which can eliminate the visual dotted appearance formed by low light transmittance when the nodes overlap, further improving the visual effect.

[0080] Example 2

[0081] Figure 3a This is a schematic diagram of the first touch electrode 20 ′ of this embodiment, including a first touch electrode first connection channel 201 ′ and a first touch electrode first node channel 202 ′; Figure 3b This is a schematic diagram of etching a pattern on the surface of the metal nanowire transparent conductive film to form a pattern of the first touch electrode 20 ′ and the second touch electrode second connecting channel 211 ′ according to the present invention; Figure 3c FIG. 2 is a schematic diagram of the second touch electrode 21 ′ of the present invention.

[0082] A multi-level nano-metal network touch module, comprising:

[0083] Substrate: including a flexible substrate and a rigid substrate, wherein the substrate includes a first surface and a second surface;

[0084] Touch function layer, including:

[0085] First touch electrode 20′: the first touch electrode adopts a multi-level nanometal network, including a first connection channel 201′ and a first node channel 202′, the first connection channel and the first node channel are arranged at intervals, the line width of the multi-level nanometal network of the first connection channel is larger than the line width of the multi-level nanometal network of the first node channel, and the light transmittance of the first connection channel is smaller than the light transmittance of the first node channel;

[0086] Insulation layer 22;

[0087] Second touch electrode 21′: The second touch electrode includes a second connection channel 211′ and a second node channel 212′. The second touch electrode adopts a multi-level nanometal network. The line width of the multi-level nanometal network of the second connection channel is greater than the line width of the multi-level nanometal network of the second node channel. The second connection channel of the second touch electrode is located in the same layer as the first touch electrode. The second node channel of the second touch electrode is located on the upper side of the insulating layer, completely covers the insulating layer in the direction of the second touch electrode, and contacts with the second connection channel of the second touch electrode to form a second touch electrode. The transmittance of the second node channel of the second touch electrode is greater than the transmittance of the second connection channel of the second touch electrode.

[0088] The microscope image of the multi-level nanometal network is as follows: Figure 8 As shown, it is in a grid state, and each grid line contains a metal nanowire overlapping network.

[0089] The substrate is used as both the substrate and the cover of the touch module. The multi-level nano-metal network touch module is ultra-light and ultra-thin.

[0090] Preferably, the substrate is an anti-glare substrate, the anti-glare layer is located on the second surface of the substrate, and the hardness of the anti-glare layer is greater than 1H.

[0091] Preferably, the substrate is a hardened substrate, the hardened layer is located on the second surface of the substrate, and its hardness is greater than 1H.

[0092] The multi-level nano-metal network has the characteristics of low haze, high light transmittance and high clarity, and can effectively avoid reflection and scattering of light emitted from the display module, thereby improving display clarity.

[0093] Example 3

[0094] Figure 4a This is a schematic diagram of the first touch electrode 20 ″ in this embodiment, including a first touch electrode first connection channel 201 ″ and a first touch electrode first node channel 202 ″; Figure 4b This is a schematic diagram of etching a pattern on the surface of the metal nanowire transparent conductive film to form a first touch electrode 20″ and a second touch electrode second connecting channel 211″ according to the present invention; Figure 4c FIG. 2 is a schematic diagram of the second touch electrode 21 ″ of the present invention.

[0095] A multi-level nano-metal network touch module, comprising:

[0096] Substrate: including a flexible substrate and a rigid substrate, wherein the substrate includes a first surface and a second surface;

[0097] Touch function layer, including:

[0098] A first touch electrode 20″: located on the first surface of the substrate, the first touch electrode adopts a multi-level nano-metal network, including a first connection channel 201″ and a first node channel 202″, the first connection channel and the first node channel are arranged at intervals, the multi-level nano-metal network line density of the first connection channel is greater than the line density of the multi-level nano-metal network of the first node channel, the multi-level nano-metal network line width of the first connection channel is equal to the line width of the multi-level nano-metal network of the first node channel, and the light transmittance of the first connection channel is less than the light transmittance of the first node channel;

[0099] Insulation layer 22;

[0100] Second touch electrode 21″: the second touch electrode includes a second connecting channel 211″ and a second node channel 212″, the second touch electrode adopts a multi-level nanometal network, the second connecting channel and the second node channel are arranged at intervals, the line density of the multi-level nanometal network of the second connecting channel is greater than the line density of the multi-level nanometal network of the second node channel, the line width of the multi-level nanometal network of the second connecting channel is equal to the line width of the multi-level nanometal network of the second node channel, the second connecting channel of the second touch electrode and the first touch electrode are located in the same layer, the second node channel of the second touch electrode is located on the upper side of the insulating layer, completely covers the insulating layer in the direction of the second touch electrode, and contacts with the second connecting channel of the second touch electrode to form a second touch electrode, and the transmittance of the second node channel of the second touch electrode is greater than the transmittance of the second connecting channel of the second touch electrode.

[0101] The substrate is used as both the substrate and the cover of the touch module. The multi-level nano-metal network touch module is ultra-light and ultra-thin.

[0102] Preferably, the substrate is an anti-glare substrate, the anti-glare layer is located on the second surface of the substrate, and the hardness of the anti-glare layer is greater than 1H.

[0103] Preferably, the substrate is a hardened substrate, the hardened layer is located on the second surface of the substrate, and its hardness is greater than 1H.

[0104] The multi-level nano-metal network has the characteristics of low haze, high light transmittance and high clarity, and can effectively avoid reflection and scattering of light emitted from the display module, thereby improving display clarity.

[0105] Line width refers to the grid line width of the multi-level nanometal network, that is, the thickness of the grid line; line density refers to the density of the grid itself of the multi-level nanometal network, that is, the size of the line spacing between the grid lines.

[0106] Example 4

[0107] like Figure 5 As shown, it is a cross-sectional schematic diagram of the touch function layer pattern structure of the present invention in the viewing direction of the first touch electrode, including a first touch electrode 20 (20′ or 20″), a first touch electrode first connection channel 201 (201′ or 201″) and a first node channel 202 (202′ or 202″); a second touch electrode second node channel 212 (212′ or 212″); and an insulating layer 22.

[0108] like Figure 6 As shown, it is a cross-sectional schematic diagram of the touch function layer pattern structure of the present invention in the viewing direction of the second touch electrode, including a second touch electrode 21 (21′ or 21″), a second touch electrode second connection channel 211 (211′ or 211″) and a second node channel 212 (212′ or 212″); a first touch electrode first node channel 202 (202′ or 202″); and an insulating layer 22.

[0109] Touch function layer, including:

[0110] A first touch electrode 20 (20′ or 20″): located on the first surface of the substrate, the first touch electrode adopts a multi-level nanometal network, including a first connection channel 201 (201′ or 201″) and a first node channel 202 (202′ or 202″), the first connection channel and the first node channel are arranged at intervals, the line width of the multi-level nanometal network of the first connection channel is larger than the line width of the multi-level nanometal network of the first node channel, and the transmittance of the first connection channel is smaller than the transmittance of the first node channel;

[0111] Insulating layer 22: the insulating layer 22 is located on the upper side of the first touch electrode first node channel 202 (202' or 202"), completely or partially covers the first touch electrode first node channel, but does not completely cover the second touch electrode second connection channel;

[0112] Second touch electrode 21 (21′ or 21″): the second touch electrode includes a second connecting channel 211 (211′ or 211″) and a second node channel 212 (212′ or 212″), the second touch electrode adopts a multi-level nanometal network, the line width of the multi-level nanometal network of the second connecting channel is greater than the line width of the multi-level nanometal network of the second node channel, the second connecting channel of the second touch electrode and the first touch electrode are located in the same layer, the second node channel of the second touch electrode is located on the upper side of the insulating layer, completely covers the insulating layer in the direction of the second touch electrode, and contacts with the second connecting channel of the second touch electrode to form a second touch electrode, and the transmittance of the second node channel of the second touch electrode is greater than the transmittance of the second connecting channel of the second touch electrode.

[0113] like Figure 5 and Figure 6 As shown, the insulating layer 22 is located above the first touch electrode first node channel 202 (202′ or 202″), and completely covers the first touch electrode first node channel 202 (202′ or 202″) in the direction of the second touch electrode, while not completely covering the second touch electrode second connection channel 211 (211′ or 211″), the second touch electrode second node channel 212 (212′ or 212″) is located above the insulating layer 22, and is in contact with the second touch electrode second connection channel 211 (211′ or 211″), while being completely out of contact with the first touch electrode first connection channel 201 (201′ or 201″), and completely out of contact with the first touch electrode first node channel 202 (202′ or 202″).

[0114] Example 5

[0115] A method for manufacturing a multi-level nano-metal network touch module, such as Figure 7 As shown, including:

[0116] a) etching a pattern on the surface of the metal nanowire transparent conductive film to form a first touch electrode and a second touch electrode second connecting channel;

[0117] b) preparing an insulating layer on the upper side of the first node channel of the first touch electrode so as to completely cover the first node channel of the first touch electrode in the direction of the second touch electrode and not completely cover the second connection channel of the second touch electrode;

[0118] c) preparing a second touch electrode second node channel on the insulating layer.

[0119] The etching method of the etching pattern includes laser etching, yellow light etching and wet etching.

[0120] The method for preparing the insulating layer comprises forming a transparent insulating layer on the surface of the film layer forming the second connecting channel of the first touch electrode and the second touch electrode by sputtering, evaporation, coating, etc., and further coating the layer with photoresist, then performing exposure and development treatment, and then etching away the portion to be removed by solution corrosion, retaining the portion above the first node channel of the first touch electrode, and stripping and removing the photoresist material by ion reaction or other mechanical methods.

[0121] The method for preparing the second node channel of the second touch electrode comprises forming a conductive layer of the second node channel of the second touch electrode on the surface of the film layer on which the insulating layer has been formed by sputtering, evaporation, coating, etc., and further coating the conductive layer with photoresist, then performing exposure and development treatment, and then etching away the portion to be removed by solution corrosion, retaining the portion above the first node channel of the first touch electrode, and stripping and removing the photoresist material by ion reaction or other mechanical methods.

[0122] The method for preparing the insulating layer and the second node channel of the second touch electrode prepares the insulating layer and the second node channel of the second touch electrode in alignment by precision inkjet printing, silk screen printing, spraying, brushing, etc.

[0123] The method also includes a method for manufacturing the edge lines of the first touch electrode and the second touch electrode, and the method includes: one-piece low-resistance film etching, screen printing silver paste, inkjet printing edge lines, etc.

[0124] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present application and are not intended to limit it. Although the present application is described in detail with reference to the embodiments, a person skilled in the art should understand that any modification or equivalent replacement of the technical solution of the present application does not depart from the spirit and scope of the technical solution of the present application and should be included in the scope of the claims of the present application.

Claims

1. A multi-level nano-metal network touch module, comprising: A substrate, wherein the substrate is a flexible substrate or a rigid substrate, and the substrate comprises a first surface and a second surface; and Touch function layer; The touch function layer includes: a first touch electrode located on the first surface of the substrate, wherein the first touch electrode adopts a multi-level nanometal network and includes a first connection channel and a first node channel, and the first connection channel and the first node channel are arranged at intervals; an insulating layer, the insulating layer being located above the first node channel and completely or partially covering the first node channel; and A second touch electrode, wherein the second touch electrode adopts a multi-level nanometal network, including a second connection channel and a second node channel; the second connection channel and the first touch electrode are located in the same layer; the second node channel is located on the upper side of the insulating layer, the width of the second node channel is less than or equal to the width of the insulating layer, and the second node channel is completely not in contact with the first node channel and the first connection channel, and is electrically insulated; the second node channel is in contact with the second connection channel to form a second touch electrode; The optical absorptivity of the first node channel and the second node channel is less than the optical absorptivity of the first connection channel or the second connection channel.

2. The multi-level nano-metal network touch module according to claim 1, characterized in that: The light transmittance of the first connecting channel is equal to the light transmittance of the second connecting channel.

3. The multi-level nano-metal network touch module according to claim 1, characterized in that: The light transmittance of the first node channel is 1 / 2 of the light transmittance of the first connection channel; the light transmittance of the second node channel is 1 / 2 of the light transmittance of the second connection channel.

4. The multi-level nano-metal network touch module according to claim 1, characterized in that: The second surface of the substrate is provided with an anti-glare layer, and the hardness of the anti-glare layer is greater than 1H.

5. The multi-level nano-metal network touch module according to claim 1, characterized in that: The substrate is a hardened substrate, the hardened layer is located on the second surface of the substrate, and its hardness is greater than 1H.

6. The multi-level nano-metal network touch control module according to any one of claims 1 to 5, characterized in that: The first connection channel and the second connection channel are in a grid shape; the first node channel and the second node channel are in a wire grid shape and are arranged vertically; the line width of the first node channel wire grid is equal to the multi-level nanometal network line width of the first connection channel in the direction of the first touch electrode; The line width of the second node channel wire grid is equal to the line width of the multi-level nanometal network of the second connection channel in the direction of the second touch electrode.

7. The multi-level nano-metal network touch control module according to any one of claims 1 to 5, characterized in that: The first connection channel, the second connection channel, the first node channel and the second node channel are all in a grid shape, and the line width of the multi-level nanometal network of the first connection channel is greater than the line width of the multi-level nanometal network of the first node channel; The line width of the multi-level nanometal network of the second connection channel is greater than the line width of the multi-level nanometal network of the second node channel.

8. The multi-level nano-metal network touch control module according to any one of claims 1 to 5, characterized in that: The first connection channel, the second connection channel, the first node channel and the second node channel are all in a grid shape, and the multi-level nano-metal network line density of the first connection channel is greater than the multi-level nano-metal network line density of the first node channel; The multi-level nano-metal network line density of the second connection channel is greater than the multi-level nano-metal network line density of the second node channel.

9. A method for preparing the multi-level nano-metal network touch module according to claims 1 to 8, comprising: a) etching a pattern on the surface of the metal nanowire transparent conductive film to form a first touch electrode and a second touch electrode second connecting channel; b) preparing an insulating layer on the upper side of the first node channel of the first touch electrode so as to completely cover the first node channel of the first touch electrode in the direction of the second touch electrode and not completely cover the second connection channel of the second touch electrode; c) preparing a second touch electrode second node channel on the insulating layer.

10. The method for preparing a multi-level nano-metal network touch module according to claim 9, characterized in that: The etching method of the etching pattern includes: laser etching, yellow light etching and / or wet etching.

11. The method for preparing the multi-level nano-metal network touch module according to claim 9 or 10, characterized in that: The method also includes preparing the edge lines of the first touch electrode and the second touch electrode, including: etching the first touch electrode and the second connecting channel by one-piece molding of a low-resistance film, etching the edge lines of the first touch electrode and the second touch electrode at the same time; screen printing of silver paste, additional screen printing of silver paste and etching of the edge lines; or Inkjet printing edge lines, the edge lines are formed by inkjet printing conductive ink.

Images