Display panel and display device
By setting contact holes with different density in the driving circuit layer of the OLED display panel, the problem of high power consumption of existing OLED display products is solved, and more efficient power use and performance improvement is achieved.
Patent Information
- Application Number
- CN202510084830.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-20
- Publication Date
- 2025-04-29
AI Technical Summary
The performance of existing OLED display products needs to be improved, especially in terms of power consumption.
By providing contact holes of different density in the driving circuit layer of the display panel, in particular, more or larger contact holes for the light emitting unit with a higher driving current, to change the electrical properties of the thin film transistors, thereby reducing the power consumption of the display panel.
It realizes that the power consumption of the display panel is effectively reduced without changing the driving current and improves the performance of the display panel.
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Figure CN119907466A_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the field of display technology, and in particular, relates to a display panel and a display device. Background Art
[0002] Organic Light Emitting Display (OLED) and flat-panel display devices based on technologies such as Light Emitting Diode (LED) have been widely used in various consumer electronic products such as mobile phones, televisions, laptops, desktop computers, etc. due to their advantages such as high image quality, power saving, thin body and wide application range, becoming the mainstream in display devices.
[0003] However, the performance of current OLED display products needs to be improved. Summary of the invention
[0004] The purpose of the present application is to provide a display panel and a display device, aiming to improve the performance of the display panel.
[0005] In a first aspect, the present application provides a display panel, which includes a substrate, a driving circuit layer and a light-emitting device layer; the driving circuit layer is arranged on one side of the substrate, the driving circuit layer includes a first pixel circuit and a second pixel circuit, the first pixel circuit includes a first thin film transistor, the second pixel circuit includes a second thin film transistor, and the driving circuit layer also includes a first contact hole corresponding to the first pixel circuit, and a second contact hole corresponding to the second pixel circuit; the light-emitting device layer is arranged on a side of the driving circuit layer away from the substrate, the light-emitting device layer includes a first light-emitting unit and a second light-emitting unit, the driving current of the first light-emitting unit is greater than the driving current of the second light-emitting unit, the first light-emitting unit is electrically connected to the first thin film transistor, and the second light-emitting unit is electrically connected to the second thin film transistor.
[0006] In some embodiments, the first contact hole includes a first via hole filled with a conductive material and a first redundant hole filled with an insulating material, and the second contact hole includes at least a second via hole filled with a conductive material.
[0007] In some embodiments, the density of the first vias is consistent with the density of the second vias.
[0008] In some embodiments, a distance between the first redundant hole and a center of a gate of the first thin film transistor is smaller than a distance between the first redundant hole and a center of a gate of the second thin film transistor.
[0009] In some embodiments, the first redundant holes are filled with an inorganic material.
[0010] In some embodiments, the first thin film transistor includes an active layer, a gate, a source electrode, and a drain electrode, the driving circuit layer further includes a first insulating layer and a second insulating layer, the active layer is arranged on one side of the substrate, the first insulating layer is arranged on the active layer, the gate electrode is arranged on a side of the first insulating layer away from the substrate, the second insulating layer is arranged on the gate electrode, and the source electrode and the drain electrode are arranged on a side of the second insulating layer away from the substrate; the first redundant hole penetrates the second insulating layer or the first redundant hole penetrates the first insulating layer and the second insulating layer;
[0011] Preferably, the driving circuit layer further includes a third insulating layer, the third insulating layer is arranged on the source and the drain, and the light emitting device layer is arranged on a side of the third insulating layer away from the substrate; the first redundant hole penetrates the first insulating layer, the second insulating layer and the third insulating layer.
[0012] In some embodiments, the first light emitting unit is a blue light emitting unit, and the second light emitting unit is a green light emitting unit or a red light emitting unit.
[0013] In some embodiments, the number of the first contact holes is greater than the number of the second contact holes.
[0014] In some embodiments, an area of the first contact hole is greater than an area of the second contact hole.
[0015] In a second aspect, an embodiment of the present application further provides a display device, comprising a display panel according to any of the above embodiments.
[0016] According to the display panel of the embodiment of the present application, the first thin film transistor is used to drive the first light-emitting unit to emit light, and the second thin film transistor is used to drive the second light-emitting unit to emit light. Since the driving current of the first light-emitting unit is greater than the driving current of the second light-emitting unit, the first light-emitting unit has a higher cross-voltage requirement for the power supply signal. By setting the density of the first contact holes near the first thin film transistor to be greater than the density of the second contact holes near the second thin film transistor, the dehydrogenation effect of the first light-emitting unit is more obvious during the annealing process, which changes the electrical properties of the first thin film transistor, making the threshold voltage of the first thin film transistor more negatively biased relative to the threshold voltage of the second thin film transistor, thereby achieving the condition that the driving current does not change, and effectively reducing the power consumption of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0018] Figure 1 A schematic cross-sectional view of a display panel provided in an embodiment of the present application;
[0019] Figure 2 A layout of a display panel provided in an embodiment of the present application;
[0020] Figure 3 A schematic cross-sectional view of a display panel provided in some other embodiments of the present application;
[0021] Figure 4 for Figure 1 A partial schematic diagram of
[0022] Figure 5 A schematic cross-sectional view of a display panel provided in some other embodiments of the present application;
[0023] Figure 6 A schematic cross-sectional view of a display panel provided in some further embodiments of the present application;
[0024] Figure 7 A layout of a display panel provided for some other embodiments of the present application.
[0025] Description of reference numerals:
[0026] 100, display panel; 10, substrate; 20, driving circuit layer; 21, first thin film transistor; 211, active layer; 212, gate; 213, source; 214, drain; 215, first insulating layer; 216, second insulating layer; 217, third insulating layer; 22, second thin film transistor; 23, first contact hole; 231, first via hole; 232, first redundant hole; 24, second contact hole; 241, second via hole; 242, second redundant hole; 25, third thin film transistor; 26, third contact hole; 30, light-emitting device layer; 31, first light-emitting unit; 32, second light-emitting unit; 311, first electrode; 312, light-emitting layer; 313, second electrode; 33, third light-emitting unit. DETAILED DESCRIPTION
[0027] The following detailed description and drawings of the embodiments of the present application are used to illustrate the principles of the present application, but cannot be used to limit the scope of the present application, that is, the present application is not limited to the described embodiments.
[0028] In the description of the present application, it should be noted that, unless otherwise specified, "multiple" means more than two; the terms "upper", "lower", "left", "right", "inside", "outside", etc., indicating the orientation or positional relationship, are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. "Vertical" is not strictly vertical, but is within the allowable error range. "Parallel" is not strictly parallel, but is within the allowable error range.
[0029] Reference to "embodiments" in this application means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described in this application may be combined with other embodiments.
[0030] The directional words appearing in the following description are all directions shown in the figures, and do not limit the specific structure of this application. In the description of this application, it should also be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.
[0031] In order to solve the above problems, embodiments of the present application provide a display panel and a display device. Embodiments of the display panel and the display device are described below in conjunction with the accompanying drawings.
[0032] An embodiment of the present application provides a display panel, which may be an organic light emitting diode (OLED) display panel, or other types of display panels, such as a micro light emitting diode (Micro Light Emitting Diode, Micro-LED) or a quantum dot light emitting diode (Quantum Light Emitting Diode, QLED) display panel.
[0033] Please refer to Figure 1 and Figure 2In a first aspect, the present application provides a display panel 100, which includes a substrate 10, a driving circuit layer 20 and a light-emitting device layer 30; the driving circuit layer 20 is arranged on one side of the substrate 10, the driving circuit layer 20 includes a first pixel circuit and a second pixel circuit, the first pixel circuit includes a first thin film transistor 21, the second pixel circuit includes a second thin film transistor 22, the driving circuit layer also includes a first contact hole 23 corresponding to the first pixel circuit, and a second contact hole 24 corresponding to the second pixel circuit; the light-emitting device layer 30 is arranged on a side of the driving circuit layer 20 away from the substrate 10, the light-emitting device layer 30 includes a first light-emitting unit 31 and a second light-emitting unit 32, the driving current of the first light-emitting unit 31 is greater than the driving current of the second light-emitting unit 32, the first light-emitting unit 31 is electrically connected to the first thin film transistor 21, and the second light-emitting unit 32 is electrically connected to the second thin film transistor 22.
[0034] Among them, the substrate 10 can be a hard substrate made of materials such as glass or plastic, or it can be a flexible substrate made of materials such as polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyimide (PI), polycarbonate (PC) or cellulose acetate propionate (CAP).
[0035] The first thin film transistor 21 is used to control the switching state of the first light emitting unit 31 and adjust the flow of current, thereby achieving precise control and image display of the first light emitting unit 31. The second thin film transistor 22 is used to control the switching state of the second light emitting unit 32 and adjust the flow of current, thereby achieving precise control and image display of the second light emitting unit 32.
[0036] The first light-emitting unit 31 and the second light-emitting unit 32 each include a first electrode 311, a light-emitting layer 312, and a second electrode 313, which are sequentially arranged in a direction away from the substrate 10. One of the first electrode 311 and the second electrode 313 can be used as an anode, and the other as a cathode. In the embodiment of the present application, the first electrode 311 is used as an anode, and the second electrode 313 is used as a cathode for illustration. The first electrode 311 of the first light-emitting unit 31 is electrically connected to the first thin-film transistor 21, and the first electrode 311 of the second light-emitting unit 32 is electrically connected to the second thin-film transistor 22. When the first electrode 311 and the second electrode 313 are powered on, electrons and holes migrate to the light-emitting layer 312 respectively, and meet in the light-emitting layer 312 to form excitons to excite the light-emitting molecules, thereby generating visible light to achieve the purpose of display.
[0037] The first contact hole 23 may include a hole with electrical connection or a hole without electrical connection. For example, the first contact hole 23 includes a via hole for connecting the first light-emitting unit 31 and the first thin film transistor 21, and the first contact hole 23 may also include a redundant hole used only for dehydrogenation during the annealing process, and the redundant hole has no electrical connection. Similarly, the second contact hole 24 may also include a via hole with electrical connection or a redundant hole without electrical connection.
[0038] The embodiment of the present application sets a first contact hole 23 corresponding to the first pixel circuit and a second contact hole 24 corresponding to the second pixel circuit, so that during the annealing process, the dehydrogenation effect of the first light-emitting unit 31 and the second light-emitting unit 32 is obvious, especially the first light-emitting unit 31 with a larger driving current, which can change the electrical properties of the first thin film transistor 21 and improve the performance of the display panel.
[0039] Optionally, the number or area of the first contact holes 23 is greater than the number or area of the second contact holes 24 . For the first light-emitting unit 31 with the largest current demand, a smaller power supply voltage can be used to achieve the required current, thereby reducing the power consumption of the display panel 100 .
[0040] In some embodiments, the first contact hole 23 includes a first via hole 231 filled with a conductive material and a first redundant hole 232 filled with an insulating material, and the second contact hole 24 includes at least a second via hole 241 filled with a conductive material.
[0041] The first via hole 231 may be a via hole connecting the first thin film transistor 21 and the first light emitting unit 31, or a via hole connecting the inside of the first thin film transistor 21. Similarly, the second via hole 241 may be a via hole connecting the second thin film transistor 22 and the second light emitting unit 32, or a via hole connecting the inside of the second thin film transistor 22.
[0042] The second contact hole 24 may only include the second via hole 241, that is, the second redundant hole 242 is not provided near the second thin film transistor 22. When the density of the first via hole 231 is the same as that of the second via hole 241, since the first contact hole 23 also includes the first redundant hole 232, the density of the first contact hole 23 is greater than that of the second contact hole 24. Alternatively, the first contact hole 23 may also include the second redundant hole 242. When the density of the first via hole 231 is the same as that of the second via hole 241, the density of the first contact hole 23 is greater than that of the second contact hole 24 by adjusting the density difference between the first redundant hole 232 and the second redundant hole 242.
[0043] In the embodiment of the present application, by disposing a first redundant hole 232 without electrical connection near the first thin film transistor 21 , the dehydrogenation effect of the first thin film transistor 21 during the annealing process can be further increased, thereby better adjusting the electrical properties of the first thin film transistor 21 .
[0044] In some embodiments, the density of the first via holes 231 is consistent with that of the second via holes 241. By setting the density of the first via holes 231 and that of the second via holes 241 to be consistent, the process can be simplified and the process preparation can be facilitated.
[0045] like Figure 3 As shown, in some embodiments, the distance between the first redundant hole 232 and the center of the gate 212 of the first thin film transistor 21 is smaller than the distance between the first redundant hole 232 and the center of the gate 212 of the second thin film transistor 22, which can increase the dehydrogenation effect of the first thin film transistor 21 during the annealing process, thereby improving the stability of the first thin film transistor 21.
[0046] In some embodiments, the first redundant holes 232 are filled with inorganic materials.
[0047] Since the first redundant hole 232 has no electrical connection function, an inorganic material is filled in the first redundant hole 232. The inorganic material in the first redundant hole 232 also has an insulating function and can reduce the hydrogen content compared to organic materials, thereby further better adjusting the electrical properties of the first thin film transistor 21.
[0048] Preferably, an encapsulation layer is also provided in a layer of the light-emitting device layer 30 away from the substrate 10. The encapsulation layer generally includes an inorganic encapsulation layer, an organic encapsulation layer and an inorganic encapsulation layer which are sequentially provided by the display panel 100 in a direction away from the substrate 10. The inorganic encapsulation layer is usually dense and hard, and can effectively block gas and moisture, and prevent external environmental factors such as water vapor and oxygen from penetrating. The inorganic material filled in the first redundant hole 232 can adopt the inorganic material of the encapsulation layer, such as silicon nitride, silicon oxide or silicon oxynitride, so as to facilitate process preparation and reduce the cost of the display panel 100.
[0049] like Figure 4As shown, in some embodiments, the first thin film transistor 21 includes an active layer 211, a gate 212, a source 213 and a drain 214, the driving circuit layer 20 also includes a first insulating layer 215 and a second insulating layer 216, the active layer 211 is arranged on one side of the substrate 10, the first insulating layer 215 is arranged on the active layer 211, the gate 212 is arranged on the side of the first insulating layer 215 away from the substrate 10, the second insulating layer 216 is arranged on the gate 212, the source 213 and the drain 214 are arranged on the side of the second insulating layer 216 away from the substrate 10; the first redundant hole 232 penetrates the second insulating layer 216 or the first redundant hole 232 penetrates the first insulating layer 215 and the second insulating layer 216.
[0050] The second thin film transistor 22 has the same structure as the first thin film transistor 21, and both include an active layer 211, a gate 212, a source 213, and a drain 214. The present embodiment takes the structure of the first thin film transistor 21 as an example for explanation, and the structure of the second thin film transistor 22 is not repeated.
[0051] By controlling the gate 212 voltage, the conductive state of the thin film transistor can be adjusted to turn it on or off, thereby controlling the brightness and color of each sub-pixel. The channel region between the source 213 and the drain 214 regulates the flow of current through the conductive state of the thin film transistor. By controlling the potential difference between the source 213 and the drain 214, the magnitude and direction of the current can be adjusted, thereby controlling the brightness and color of the pixel.
[0052] Specifically, the first electrode 311 is connected to the drain electrode 214 through the first via hole 231. When the gate electrode 212 of the first thin film transistor 21 receives an appropriate signal to control the first thin film transistor 21 to be turned on, current flows from the first electrode 311 to the drain electrode 214, then passes through the channel region of the first thin film transistor 21, and finally flows to the source electrode 213. In this way, a circuit connection is established between the first electrode 311 and the drain electrode 214 of the first thin film transistor 21, allowing current to flow in the display panel 100 to control the brightness and color of the pixel.
[0053] Optionally, the first thin film transistor 21 of the display panel 100 of the embodiment of the present application may adopt a bottom gate structure or a top gate structure. In the bottom gate structure, the gate electrode 212 is located at the bottom of the thin film transistor, for example, it is arranged on the side of the active layer 211 close to the substrate 10. The charge injection efficiency of the bottom gate structure is high, and the signal transmission speed is fast, which is suitable for display applications with high refresh rates. In the top gate structure, the gate electrode 212 is located at the top of the thin film transistor, for example, it is arranged on the side of the active layer 211 away from the substrate 10. The top gate structure has better charge control capability and lower current leakage. The bottom gate structure or the top gate structure can be selected according to the needs, and the present application does not make specific limitations on it.
[0054] The hydrogen generated during the preparation of the thin film transistor active layer 211 will have a negative impact on the channel region of the active layer 211. The high temperature of the annealing process can cause the hydrogen to be discharged through the first contact hole 23, so that the threshold voltage of the first thin film transistor 21 is more negatively biased relative to the threshold voltage of the second thin film transistor 22. Therefore, the first redundant hole 232 is arranged close to the active layer 211, which can be more conducive to the hydrogen in the active layer 211 being discharged to the outside from the first contact hole 23 during the annealing process, thereby further reducing the power consumption of the display panel 100.
[0055] like Figure 5 As shown, preferably, the driving circuit layer 20 also includes a third insulating layer 217, the third insulating layer 217 is arranged on the source 213 and the drain 214, and the light-emitting device layer 30 is arranged on the side of the third insulating layer 217 away from the substrate 10; the first redundant hole 232 passes through the first insulating layer 215, the second insulating layer 216 and the third insulating layer 217.
[0056] That is, one end of the first redundant hole 232 is in the same layer as the active layer 211 , and the other end is in the same layer as the third insulating layer 217 , ensuring that the height of the first redundant hole 232 is relatively large, thereby further improving the dehydrogenation effect of the first redundant hole 232 .
[0057] In the display field, OLED (Organic Light-Emitting Diode) has become the main theme. The battery life of the display panel is a core indicator, and reducing the power consumption of the screen has always been an important direction of attention. The electrical properties of the driving thin-film transistors of red, green, and blue pixels are consistent. When displaying a white screen normally, the driving current of the blue light-emitting unit is generally the largest. Compared with the red and green light-emitting units, the blue light-emitting unit requires the largest power supply voltage, which becomes the bottleneck of the voltage. In order to match the normal light emission of the blue light-emitting unit, a larger power supply voltage is required, and the power consumption of the screen is relatively large.
[0058] Please refer to Figure 2 and Figure 6 In some embodiments, the first light emitting unit 31 is a blue light emitting unit, and the second light emitting unit 32 is a green light emitting unit or a red light emitting unit. In the embodiment of the present application, by setting a larger number or a larger area of corresponding first contact holes 23 in the first pixel circuit of the first light emitting unit 31, a smaller power supply voltage can be used for the first light emitting unit 31 with the largest current demand to achieve the required current, thereby reducing the power consumption of the display panel 100.
[0059] Exemplarily, the light-emitting device layer 30 also includes a third light-emitting unit 33, the driving current of the first light-emitting unit 31 is greater than the driving current of the third light-emitting unit 33, the driving circuit layer also includes a third pixel circuit, the third pixel circuit includes a third thin-film transistor 25, the driving circuit layer also includes a third contact hole 26 corresponding to the third pixel circuit, the third light-emitting unit 33 is electrically connected to the third thin-film transistor 25, and the number or area of the first contact holes 23 is greater than the number or area of the third contact holes 26.
[0060] The first light-emitting unit 31 may be a blue light-emitting unit, one of the second light-emitting unit 32 and the third light-emitting unit 33 may be a green light-emitting unit, and the other may be a red light-emitting unit. The structure of the third thin-film transistor 25 is the same as that of the first thin-film transistor 21, and will not be described in detail herein. In the embodiment of the present application, by setting the density of the first contact holes 23 to be greater than the density of the third contact holes 26, the density of the first contact holes 23 in the pixel unit is ensured to be the largest, so that for the first light-emitting unit 31 having the largest current demand, a smaller power supply voltage can be used to achieve the required current, thereby reducing the power consumption of the display panel 100.
[0061] like Figure 2 As shown, in some embodiments, the number of the first contact holes 23 is greater than the number of the second contact holes 24. The density difference between the first contact holes 23 and the second contact holes 24 can be achieved by setting the area of each first contact hole 23 to be the same as that of each second contact hole 24 and increasing the number of the first contact holes 23. Specifically, the first via 231 and the first redundant hole 232 can be set near the first thin film transistor 21, and the second via 241 is only set near the second thin film transistor 22. The number of the first via 231 and the second via 241 is the same. Since the first contact hole 23 also includes the first redundant hole 232, the number of the first contact holes 23 is greater than the number of the second contact holes 24, which changes the electrical properties of the first thin film transistor 21, so that the threshold voltage of the first thin film transistor 21 is more negatively biased relative to the threshold voltage of the second thin film transistor 22, thereby achieving the condition that the driving current does not change, and effectively reducing the power consumption of the display panel 100.
[0062] In the embodiment of the present application, the density difference is achieved by adjusting the number of the first contact holes 23 and the second contact holes 24 , which facilitates the operation and improves the manufacturing efficiency of the display panel 100 .
[0063] like Figure 7 As shown, in some embodiments, the area of the first contact hole 23 is greater than the area of the second contact hole 24. The density difference between the first contact holes 23 and the second contact holes 24 can be achieved by setting the total number of the first contact holes 23 and the second contact holes 24 to be the same and increasing the area of a single first contact hole 23.
[0064] The embodiment of the present application changes the electrical properties of the first thin film transistor 21 by adjusting the areas of the first contact hole 23 and the second contact hole 24, so that the threshold voltage of the first thin film transistor 21 is more negative than the threshold voltage of the second thin film transistor 22, thereby effectively reducing the power consumption of the display panel 100 without changing the driving current. Compared with the adjustment in quantity, the first contact hole 23 can be reduced to occupy too much space without affecting the arrangement of other structures.
[0065] Of course, in other embodiments, the quantity difference may be combined with the area difference to achieve a density of the first contact holes 23 greater than the density of the second contact holes 24 .
[0066] The second aspect of the present application provides a display device, including the display panel 100 of any of the above embodiments. Since the display device adopts all the technical solutions of all the above embodiments, it has at least all the beneficial effects brought by the technical solutions of the above embodiments, which will not be described one by one here.
[0067] The display device may be any device with a display function, for example, a mobile phone, a tablet computer, a laptop computer, a PDA, an in-vehicle electronic device, a wearable device, an ultra-mobile personal computer (UMPC), a netbook, or a personal digital assistant (PDA), etc. It may also be a non-mobile device such as a personal computer (PC), a television (TV), a teller machine, or an automated machine.
[0068] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in the present application, and these modifications or replacements should be included in the protection scope of the present application. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.
Claims
1. A display panel, characterized in that: include: substrate; a driving circuit layer, disposed on one side of the substrate, the driving circuit layer comprising a first pixel circuit and a second pixel circuit, the first pixel circuit comprising a first thin film transistor, the second pixel circuit comprising a second thin film transistor, the driving circuit layer further comprising a first contact hole corresponding to the first pixel circuit, and a second contact hole corresponding to the second pixel circuit; A light-emitting device layer is arranged on a side of the driving circuit layer away from the substrate, and the light-emitting device layer includes a first light-emitting unit and a second light-emitting unit, a driving current of the first light-emitting unit is greater than a driving current of the second light-emitting unit, the first light-emitting unit is electrically connected to the first thin film transistor, and the second light-emitting unit is electrically connected to the second thin film transistor.
2. The display panel according to claim 1, characterized in that: The first contact hole includes a first via hole filled with a conductive material and a first redundant hole filled with an insulating material, and the second contact hole includes at least a second via hole filled with a conductive material.
3. The display panel according to claim 2, characterized in that: The density of the first via holes is consistent with that of the second via holes.
4. The display panel according to claim 2, characterized in that: A distance between the first redundant hole and a center of a gate of the first thin film transistor is smaller than a distance between the first redundant hole and a center of a gate of the second thin film transistor.
5. The display panel according to claim 2, characterized in that: The first redundant pores are filled with an inorganic material.
6. The display panel according to claim 2, characterized in that: The first thin film transistor includes an active layer, a gate, a source electrode and a drain electrode, the driving circuit layer also includes a first insulating layer and a second insulating layer, the active layer is arranged on one side of the substrate, the first insulating layer is arranged on the active layer, the gate electrode is arranged on a side of the first insulating layer away from the substrate, the second insulating layer is arranged on the gate electrode, and the source electrode and the drain electrode are arranged on a side of the second insulating layer away from the substrate; the first redundant hole penetrates the second insulating layer or the first redundant hole penetrates the first insulating layer and the second insulating layer; Preferably, the driving circuit layer also includes a third insulating layer, the third insulating layer is arranged on the source and drain, and the light-emitting device layer is arranged on the side of the third insulating layer away from the substrate; the first redundant hole passes through the first insulating layer, the second insulating layer and the third insulating layer.
7. The display panel according to claim 1, characterized in that: The first light emitting unit is a blue light emitting unit, and the second light emitting unit is a green light emitting unit or a red light emitting unit.
8. The display panel according to claim 1, characterized in that: The number of the first contact holes is greater than the number of the second contact holes.
9. The display panel according to claim 1, characterized in that: An area of the first contact hole is greater than an area of the second contact hole.
10. A display device, characterized in that: The invention comprises the display panel according to any one of claims 1 to 7.