Ultra-wideband 2-bit phase reconfigurable reflective array and electromagnetic wave regulation and control method

Abstract

The invention provides an ultra-wideband 2-bit phase reconfigurable reflective array and an electromagnetic wave regulation and control method, and belongs to the field of novel artificial electromagnetic materials. The array is formed by two-dimensional periodic arrangement of units composed of tightly-coupled antennas and active microstrip circuits, PIN diodes and variable capacitance diodes are integrated into the active microstrip circuits on the backs of the units, and on-off characteristics of the PIN diodes and variable capacitance characteristics of the variable capacitance diodes are utilized. Therefore, the unit has the capability of regulating and controlling four different phase states in an ultra-wideband range, and the phase difference between the phase states is 90 degrees. 2-bit phase coding is carried out on different units in the array, and the functions of scattering beam focusing, scattering beam deflection, low electromagnetic scattering, electromagnetic signal simulation and the like can be achieved. The 2-bit reflection phase reconfigurable antenna has the advantages of reconfigurable 2-bit reflection phase, ultra-large working bandwidth, easy system integration and the like, and has an important application prospect in the field of ultra-large bandwidth radar electronic countermeasure and interference.

Description

Technical Field

[0001] The invention relates to an ultra-wideband 2-bit phase reconfigurable reflective array and an electromagnetic wave control method, and belongs to the field of novel artificial electromagnetic materials. Background Art

[0002] Active reflectarray is a new antenna technology that combines traditional reflectarray antennas and active electronic devices. It aims to achieve high-efficiency and high-flexibility electromagnetic scattering control by integrating active devices and reflectarray structures. Traditional passive reflectarrays change the reflection phase by adjusting the geometric structure of the array unit (such as patch size or delay line) to form a specific wavefront. However, it has the defects of narrow bandwidth and inflexible phase adjustment. With the development of semiconductor technology, it has become possible to integrate active devices (such as PIN diodes, varactor diodes, amplifiers, etc.) in reflectarray units, thereby realizing dynamic control of each unit. After the incident electromagnetic wave is received by the unit, the phase (or amplitude) is adjusted by the active circuit and then reflected back into space. Different electromagnetic scattering functions can be achieved by independently controlling the electromagnetic response of each unit.

[0003] As an artificially designed composite electromagnetic structure, the core principle of electromagnetic metamaterials is to achieve engineering control of equivalent medium parameters through the orderly arrangement of subwavelength-scale units. This type of artificial structure can break through the performance limitations of natural materials and show important application value in the fields of negative refraction and electromagnetic stealth. However, traditional three-dimensional metamaterials are limited by the three-dimensional arrangement method, and there are engineering difficulties such as large volume, high processing cost, and difficulty in flexible deployment. In response to the above bottleneck problems, two-dimensional planar electromagnetic structures came into being. This technology uses subwavelength resonant units to construct planar periodic or quasi-periodic structures, and regulates the phase distribution of electromagnetic wavefronts through spatial encoding. Compared with three-dimensional metamaterials, two-dimensional planar structures have significant advantages such as low profile, light weight, and easy integration, and are particularly suitable for application scenarios such as conformal antennas. However, early passive two-dimensional planar electromagnetic structures have the limitation of functional solidification: their working bandwidth is generally low and they lack real-time reconfigurability, which seriously restricts the adaptability of actual systems. In order to break through the limitation of the non-adjustable passive structure, active reconfigurable two-dimensional periodic structures realize dynamic control of electromagnetic waves by integrating semiconductor devices (such as PIN diodes and varactor diodes) in metal units. This type of active electromagnetic structure can gradually realize electromagnetic functions such as adjustable phase, adjustable amplitude, and combined amplitude and phase control.

[0004] Nevertheless, the existing reconfigurable two-dimensional periodic structure has a working bandwidth that is difficult to exceed 50% when realizing the electromagnetic function of 2-bit phase regulation. Therefore, it is an urgent problem to be solved to adopt new design methods and design concepts to realize ultra-wideband 2-bit phase reconfigurable electromagnetic functions.

[0005] The present invention proposes a novel ultra-wideband phase reconfigurable reflectarray design paradigm: based on the broadband characteristics of microstrip transmission lines and the ultra-wideband working characteristics of PIN diodes / varactors, an innovative bottom active microstrip circuit is designed; combined with the ultra-wideband electromagnetic wave receiving and transmitting capabilities of tightly coupled antennas, the designed reflectarray has the ability to control the phase of scattered electromagnetic waves within the ultra-wideband. Summary of the invention

[0006] Technical problem: The ultra-wideband 2-bit phase reconfigurable reflectarray based on a novel active microstrip circuit of the present invention breaks through the limitations of traditional passive two-dimensional planar electromagnetic structures such as rigid functions and narrow bandwidth, and solves the problem that traditional active two-dimensional planar electromagnetic structures cannot achieve 2-bit dynamic phase regulation within an ultra-wide operating frequency band. In traditional two-dimensional planar electromagnetic structures, the metal structures in the array units are mostly dispersive structures. Combined with the physical properties of the medium itself, electromagnetic resonance is used to manipulate spatial electromagnetic waves, which is very unfavorable for achieving ultra-wideband electromagnetic functions. The ultra-wideband reflectarray of the present invention achieves better ultra-wideband electromagnetic performance by using existing active devices and a new waveguide structure design.

[0007] Technical solution: An ultra-wideband 2-bit phase reconfigurable reflective array of the present invention is composed of a number of identical array units arranged in a two-dimensional periodic manner, characterized in that the array unit includes three metal layers, the first metal layer is an impedance transformer layer for welding a tightly coupled antenna, the second metal layer is a ground layer, and the third metal layer is an active microstrip circuit layer. A first type of metal via is arranged between the first metal layer and the third metal layer, and a second type of metal via is arranged between the second metal layer and the third metal layer; the tightly coupled antenna is a vertical antenna, the upper part of which is a frequency selective surface, the lower part is a microstrip balun and an electric dipole, and a matching branch is arranged at the end of the microstrip balun; the active microstrip circuit includes four PIN diodes, four varactor diodes, four DC blocking capacitors, five types of microstrip lines and nine types of DC bias circuits, one end of the first type of microstrip line passes through The first metal via is connected to the impedance converter; the other end is connected to the cathode of four PIN diodes; the anodes of the four PIN diodes are respectively connected to the second, third, fourth and fifth microstrip lines; the four varactor diodes are respectively integrated between the second, third, fourth and fifth microstrip lines and the second metal via; the anodes of the four varactor diodes are grounded through the second metal via, and the cathodes are respectively connected to the corresponding anodes of the PIN diodes through the second, third, fourth and fifth microstrip lines; DC blocking capacitors are respectively integrated between the anodes of the four PIN diodes and the cathodes of the four varactor diodes; nine DC bias circuits are respectively connected to the first microstrip line, the anodes of the four PIN diodes and the cathodes of the four varactor diodes, and the on-off of the PIN diodes and the change of the capacitance of the varactor diodes are controlled by adjusting the DC voltage.

[0008] Preferably, the bottom end of the microstrip balun is connected to the impedance transformer by welding.

[0009] Preferably, the active microstrip circuit includes a single-pole four-throw switch composed of four PIN diodes, and four radio frequency channels composed of microstrip lines of different lengths and varactor diodes with different capacitance ratios.

[0010] Preferably, the DC bias circuit is an isolated DC circuit composed of an inductor, a capacitor and a resistor, wherein the inductor has an inductance of 83nH, the capacitor has a capacitance of 150pF and the resistor has a resistance of 5Ω.

[0011] Preferably, in the array unit, the first metal layer is located on the upper surface of the upper dielectric substrate, the second metal layer is located between the upper dielectric substrate and the middle adhesive layer, and the third metal layer is located on the lower surface of the lower dielectric substrate; the dielectric constant of the upper dielectric substrate is 2.94, the thickness is 1.7 mm, and the loss tangent is 0.0017; the dielectric constant of the middle adhesive layer is 3.5, the thickness is 0.1 mm, and the loss tangent is 0.0042; the dielectric constant of the lower dielectric substrate is 2.65, the thickness is 0.9 mm, and the loss tangent is 0.0015.

[0012] Preferably, the tightly coupled antenna is a single-layer printed circuit board, the dielectric substrate of which has a dielectric constant of 2.94, a loss tangent of 0.0017, and a thickness of 1.7 mm.

[0013] Preferably, the line width of the microstrip line in the active microstrip circuit is a line width corresponding to a characteristic impedance of 50 ohms.

[0014] The present invention also provides an electromagnetic wave control method based on the above-mentioned metasurface, comprising the following steps: after the tightly coupled antenna converts the spatial electromagnetic wave into a guided wave, the guided wave is conducted to an impedance converter; the impedance converter conducts the guided wave to a first microstrip line in an active microstrip circuit through a first metal through hole; by switching the DC bias voltage between 0V and 1.3V, the on-off of the PIN diode can be controlled to control the subsequent propagation path of the guided wave, that is, the second, third, fourth or fifth microstrip line; by changing the DC bias voltage of the varactor diode within the range of 0-15V, the capacitance of the varactor diode on the subsequent path is changed to dynamically control the phase of the guided wave; finally, the guided wave returns along the original path and is radiated into the free space by the tightly coupled antenna.

[0015] Beneficial effects: Compared with the prior art, the advantages of the present invention are: 1. The present invention integrates active microstrip circuits in each array unit, so that the new reflective array has the advantages of low manufacturing cost, large working bandwidth and easy system integration, and has important application prospects in the field of ultra-wide bandwidth radar electronic countermeasures and interference.

[0016] 2. The present invention adopts the design concept of "receiving-processing-transmitting", which has a clear design concept and can be used to quickly design array units with other electromagnetic functions. In the array unit of the present invention, a tightly coupled antenna is used to receive and radiate space electromagnetic waves, and an active microstrip circuit is used to realize ultra-wideband reflection phase 2-bit reconfigurable processing.

[0017] 3. The present invention converts spatial electromagnetic waves into guided waves for processing, and at the same time utilizes the broadband working characteristics of microstrip transmission lines, PIN diodes and varactor diodes to reduce the influence of passive metal structure dispersion, thereby achieving 2-bit phase reconfigurable electromagnetic characteristics under ultra-large bandwidth.

[0018] 4. Compared with the traditional fan-shaped bias branch technology, the DC isolation circuit technology composed of resistors, capacitors and inductors used in the present invention has the characteristics of large working bandwidth and small footprint, and plays an irreplaceable role in the design of low-frequency working circuits.

[0019] 5. The present invention is easy to process and realize. The reflective array used in the present invention has a mature low-cost processing technology and can be manufactured using printed circuit board technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 Schematic diagram of a model of an ultra-wideband 2-bit phase reconfigurable reflective array of the present invention, wherein (a) and (b) are schematic diagrams of the front and back sides of the model, respectively.

[0021] Figure 2 It is an enlarged view of a single array unit of the present invention.

[0022] Figure 3 It is an oblique enlarged view of the active microstrip circuit of the array unit of the present invention.

[0023] Figure 4 It is a logical schematic diagram of the operation of the array unit of the present invention.

[0024] Figure 5 2 are simulation results of 2-bit phase control of the array unit of the present invention, wherein (a) is a simulation result of 2-bit phase control at an operating frequency of 0.449 GHz, and (b) is a simulation result of 2-bit phase control at an operating frequency of 0.600 GHz.

[0025] Figure 6 1 is a diagram of simulation results of 2-bit phase control of the array unit of the present invention, wherein (a) is a diagram of simulation results of 2-bit phase control at an operating frequency of 0.750 GHz, and (b) is a diagram of simulation results of 2-bit phase control at an operating frequency of 0.900 GHz.

[0026] Figure 7 1 and 1. These are simulation result diagrams of 2-bit phase control of the array unit of the present invention, wherein (a) is a simulation result diagram of 2-bit phase control at an operating frequency of 1.050 GHz, and (b) is a simulation result diagram of 2-bit phase control at an operating frequency of 1.200 GHz.

[0027] Figure 8 1 is a diagram of simulation results of 2-bit phase control of the array unit of the present invention, wherein (a) is a diagram of simulation results of 2-bit phase control at an operating frequency of 1.350 GHz, and (b) is a diagram of simulation results of 2-bit phase control at an operating frequency of 1.595 GHz.

[0028] Fig. 9 It is a simulation result diagram of the reflection amplitude corresponding to the array unit of the present invention when 2-bit phase control is performed at different frequencies.

[0029] In the figure, 1. tightly coupled antenna stand, 2. array base plate, 3. active microstrip circuit, 4. frequency selective surface, 5. electric dipole, 6. microstrip balun, 7. impedance converter, 8. PIN diode, 9. varactor diode, 10. DC bias circuit, 11. first type of microstrip line, 12. second type of microstrip line, 13. third type of microstrip line, 14. fourth type of microstrip line, 15. fifth type of microstrip line. DETAILED DESCRIPTION

[0030] The present invention is further explained below in conjunction with the accompanying drawings and specific embodiments. It should be understood that these examples are only used to illustrate the present invention and are not used to limit the scope of the present invention. After reading the present invention, various equivalent forms of modifications to the present invention by those skilled in the art all fall within the scope defined by the claims attached to this application.

[0031] In this embodiment, the novel ultra-wideband reflective array uses a tightly coupled antenna to receive and radiate space waves, and the working process is as follows: after the tightly coupled antenna converts the space electromagnetic wave into a guided wave, the guided wave is transmitted to the impedance converter; the impedance converter transmits the guided wave to the first microstrip line in the active microstrip circuit through the first metal through hole; by switching the DC bias voltage between 0V and 1.3V, the on-off of the PIN diode can be regulated to control the subsequent propagation path of the guided wave, that is, the second, third, fourth or fifth microstrip line, each microstrip line corresponds to a radio frequency channel; by changing the DC bias voltage of the varactor diode within the range of 0-15V, the capacitance of the varactor diode on the subsequent path is changed to dynamically control the phase of the guided wave; after the guided wave touches the ground, it returns to the original path and is finally radiated into the free space by the tightly coupled antenna.

[0032] The electromagnetic metasurface consists of N In this example, 8 The electromagnetic metasurface is composed of 7 metasurface units. This embodiment includes a total of eight printed circuit boards, namely an array base plate 2 integrating active microstrip circuits, metal ground and impedance transformers and seven tightly coupled antenna vertical plates 1, such as Figure 1By loading different DC bias voltages on the active microstrip circuit 3 on the back of the array, 2-bit control of the reflection phase can be achieved within an ultra-wideband range.

[0033] The array base plate 2 is a three-layer printed circuit board, including upper and lower dielectric substrates and an intermediate bonding layer. The dielectric constant of the upper dielectric substrate is 2.94, the thickness is 1.7mm, and the loss tangent is 0.0017; the dielectric constant of the intermediate bonding layer is 3.5, the thickness is 0.1mm, and the loss tangent is 0.0042; the dielectric constant of the lower dielectric substrate is 2.65, the thickness is 0.9mm, and the loss tangent is 0.0015. The tightly coupled antenna stand 1 is a single-layer printed circuit board, and its dielectric substrate has a dielectric constant of 2.94, a loss tangent of 0.0017, and a thickness of 1.7mm. All eight printed circuit boards use copper foil as the material of the metal structure, with a copper thickness of HOZ, and are treated with anti-oxidation using a tinning process.

[0034] The overall structure of the array unit is divided into three layers, the upper layer is an ultra-wideband tightly coupled antenna, the middle layer is a metal ground, and the lower layer is an active microstrip circuit with integrated active devices. The tightly coupled antenna used in this embodiment includes three parts, namely a frequency selective surface 4 with a square periodic structure, an electric dipole 5 and a microstrip balun 6. The microstrip balun and the electric dipole are fed in a coupled manner. An extension line is used at the end of the microstrip balun as a matching branch to achieve good impedance matching within the ultra-wideband range. The bottom end of the microstrip balun is connected to one end of the impedance transformer 7 by welding. The other end of the impedance transformer 7 is connected to the active microstrip circuit through a first metal via, such as Figure 2 The impedance transformer 7 is a microstrip line in a gradient form, which is used to transform the input impedance of the tightly coupled antenna into 50Ω, thereby achieving good energy transmission between the active microstrip circuit and the tightly coupled antenna.

[0035] The active microstrip circuit located on the back of the array unit consists of four PIN diodes, four varactor diodes, four DC blocking capacitors, five types of microstrip lines, and nine types of DC bias circuits, such as Figure 3As shown. The cathodes of the four PIN diodes 8 are connected to the first microstrip line 11, and the anodes are connected to the second microstrip line 12, the third microstrip line 13, the fourth microstrip line 14 and the fifth microstrip line 15 respectively. The four PIN diodes form a single-pole four-throw switch to select four RF channels. Different RF channels correspond to microstrip lines of different lengths and different varactor diodes 9. The other end of the varactor diode 9 is connected to the ground through a second metal via. The broadband DC bias circuit 10 provides bias voltages of 0-1.3V and 0-15V to the PIN diode and the varactor diode respectively to control the propagation path of the guided wave and to adjust its phase. The DC bias circuit 10 consists of two inductors, a capacitor and a resistor. The line widths of the first, second, third, fourth and fifth microstrip lines are all the line widths corresponding to the characteristic impedance of 50 ohms.

[0036] In this embodiment, the working logic diagram of the array unit is as follows: Figure 4 As shown in the figure, four PIN diodes are used to build a single-pole four-throw switch, and different RF channels are selected according to the needs to process the guided wave. The four RF channels correspond to four microstrip transmission lines of different lengths and varactor diodes with different varactor ranges. After the electromagnetic wave received by the antenna is transmitted to the first microstrip transmission line, it will be selected to a certain RF channel by the single-pole four-throw switch composed of PIN diodes. After the phase shift of the fixed-length microstrip transmission line under the RF channel and the regulation of the end varactor diode, the guided wave is reflected by the original path and finally radiated into space by the antenna.

[0037] In this embodiment, the phase modulation principle of different RF channels composed of transmission lines with different line lengths and varactor diodes with different varactor ranges is as follows: According to the solution formula of reflection coefficient in transmission line theory: (1) in, is the normalized input impedance at distance z', which can be obtained by the following formula: (2) is the phase shift constant; is the normalized load impedance. At the end of the transmission line in the RF channel, the load is a variable capacitor value , considering it as an ideal capacitor, that is, ignoring various parasitic parameters in actual active devices, the normalized load impedance is as follows: (3) Substituting formula (3) into formula (2) we can calculate : (4) Among them, A and z'. Substituting formula (4) into formula (1), we can simplify it to get: (5) Combined with Euler's formula, the phase of the reflection coefficient can be obtained With variable capacitance value The relationship between the length z' of the transmission line is: (6) That is, when the variable capacitance value When the length z' of the transmission line changes, the phase of the corresponding reflection coefficient There will also be changes accordingly.

[0038] Combining the above theory, a single-pole four-throw switch composed of PIN diodes is used to switch microstrip lines of different lengths and change the capacitance of the varactor diode to achieve 2-bit phase modulation. The field-circuit joint simulation method is used to bring the simulation models of the PIN diode and varactor diode provided by the manufacturer into the array unit for overall simulation, and the 2-bit phase simulation results of the unit at different frequency points are obtained as follows: Figure 5 , Figure 6 , Figure 7 and Figure 8 As shown, when 2-bit phase modulation is performed at different frequencies, the corresponding reflection amplitude results are as follows Fig. 9 shown.

[0039] According to the joint simulation results, the reflect array in this embodiment has an operating bandwidth of 0.449 GHz-1.595 GHz, with a relative bandwidth of 112.1%, far exceeding the existing design cases. Within this bandwidth range, 2-bit phase coverage can be achieved, and the corresponding reflection amplitude fluctuation does not exceed 4 dB.

[0040] The present invention starts from the theoretical model of load variable capacitance phase modulation and microstrip transmission line phase shifting, and provides a simple design idea and method. It only needs to change the propagation path of the guided wave through a single-pole four-throw switch constructed by four PIN diodes, so as to construct a 2-bit reflection phase within the ultra-wideband frequency range.

[0041] The present invention has the advantages of ultra-large bandwidth, 2-bit controllable electromagnetic reflection phase, low manufacturing cost, easy system integration, etc., and can be used to realize functions such as scattered beam deflection, scattered beam focusing, low electromagnetic scattering and electromagnetic signal simulation.

[0042] It should be noted that the above is only a preferred implementation of the present invention in the P band and the L band, and the same structure can be applied to higher frequency bands by scaling the size, such as the C band, the X band, the Ku band, etc. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be regarded as the protection scope of the present invention.

Claims

1. An ultra-wideband 2-bit phase reconfigurable reflective array, consisting of a plurality of identical array units arranged in a two-dimensional periodic manner, characterized in that: The array unit includes three metal layers, the first metal layer is an impedance converter layer for welding a tightly coupled antenna, the second metal layer is a ground layer, and the third metal layer is an active microstrip circuit layer. A first metal via is arranged between the first metal layer and the third metal layer, and a second metal via is arranged between the second metal layer and the third metal layer. The tightly coupled antenna is a vertical antenna, the upper part of which is a frequency selective surface, the lower part is a microstrip balun and an electric dipole, and a matching branch is arranged at the end of the microstrip balun. The active microstrip circuit includes four PIN diodes, four varactor diodes, four DC blocking capacitors, five microstrip lines and nine DC bias circuits, one end of the first microstrip line is connected to the impedance converter through the first metal via, and the other end is connected to the four PIN diodes. The cathode of the four PIN diodes is connected to the second, third, fourth and fifth microstrip lines respectively; the four varactor diodes are respectively integrated between the second, third, fourth and fifth microstrip lines and the second metal vias; the anodes of the four varactor diodes are grounded through the second metal vias, and the cathodes are respectively connected to the anodes of the corresponding PIN diodes through the second, third, fourth and fifth microstrip lines; DC blocking capacitors are respectively integrated between the anodes of the four PIN diodes and the cathodes of the four varactor diodes; nine DC bias circuits are respectively connected to the first microstrip line, the anodes of the four PIN diodes and the cathodes of the four varactor diodes, and the on-off of the PIN diodes and the change of the capacitance of the varactor diodes are controlled by adjusting the DC voltage.

2. The ultra-wideband 2-bit phase reconfigurable reflectarray according to claim 1, characterized in that: The bottom end of the microstrip balun is connected to the impedance transformer through welding.

3. The ultra-wideband 2-bit phase reconfigurable reflectarray according to claim 1, characterized in that: The active microstrip circuit comprises a single-pole four-throw switch composed of four PIN diodes and four radio frequency channels composed of microstrip lines of different lengths and varactor diodes with different capacitance ratios.

4. The ultra-wideband 2-bit phase reconfigurable reflectarray according to claim 1, characterized in that: The DC bias circuit is an isolated DC circuit composed of an inductor, a capacitor, and a resistor, wherein the inductor has an inductance of 83nH, the capacitor has a capacitance of 150pF, and the resistor has a resistance of 5Ω.

5. The ultra-wideband 2-bit phase reconfigurable reflectarray according to claim 1, characterized in that: In the array unit, the first metal layer is located on the upper surface of the upper dielectric substrate, the second metal layer is located between the upper dielectric substrate and the middle adhesive layer, and the third metal layer is located on the lower surface of the lower dielectric substrate; the upper dielectric substrate has a dielectric constant of 2.94, a thickness of 1.7 mm, and a loss tangent of 0.0017; the middle adhesive layer has a dielectric constant of 3.5, a thickness of 0.1 mm, and a loss tangent of 0.0042; the lower dielectric substrate has a dielectric constant of 2.65, a thickness of 0.9 mm, and a loss tangent of 0.0015.

6. The ultra-wideband 2-bit phase reconfigurable reflectarray according to claim 1, characterized in that: The tightly coupled antenna is a single-layer printed circuit board, the dielectric constant of the dielectric substrate of which is 2.94, the loss tangent is 0.0017, and the thickness is 1.7 mm.

7. The ultra-wideband 2-bit phase reconfigurable reflectarray according to claim 1, characterized in that: The line width of the microstrip line in the active microstrip circuit is the line width corresponding to the characteristic impedance of 50 ohms.

8. The electromagnetic wave control method based on any one of the reflective arrays of claims 1 to 7, characterized in that: The invention comprises the following steps: after a tightly coupled antenna converts a space electromagnetic wave into a guided wave, the guided wave is conducted to an impedance converter through a microstrip balun; the impedance converter conducts the guided wave to a first microstrip line in an active microstrip circuit through a first metal through hole; by switching a DC bias voltage between 0V and 1.3V, the on-off of a PIN diode is regulated to realize the function of a single-pole four-throw switch, thereby selecting a radio frequency channel for subsequent propagation of the guided wave, that is, a second, third, fourth or fifth microstrip line; in the selected radio frequency channel, the DC bias voltage of the varactor diode is changed within a range of 0-15V to realize a change in the capacitance of the varactor diode on a subsequent path, thereby dynamically regulating the phase of the guided wave; finally, the phase-adjusted guided wave is reflected by the second metal through hole grounding, returns along the original radio frequency channel, and is emitted into space by the tightly coupled antenna, thereby realizing ultra-wideband 2-bit phase-reconfigurable electromagnetic wave regulation.

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