Exposure correction method and electronic equipment

Abstract

The invention relates to the technical field of monocrystalline silicon manufacturing, in particular to an exposure correction method and electronic equipment. The exposure correction method comprises the following steps: determining a standard pulling speed interval and a standard seeding starting liquid temperature interval; determining the seeding pulling speed influenced by the liquid temperature of 1 DEG C; the system equipment obtains the system seeding starting liquid temperature and the system pulling speed; the system equipment calculates the correction liquid temperature, wherein the correction liquid temperature = the reference liquid temperature-the system seeding starting liquid temperature; wherein the reference liquid temperature is determined by the system pulling speed, the standard pulling speed interval, the standard seeding starting liquid temperature interval and the seeding pulling speed influenced by the liquid temperature of 1 DEG C; and the system equipment calculates the target exposure according to the correction liquid temperature. According to the exposure correction method and the electronic equipment provided by the invention, the problems that the exposure is manually corrected according to the drainage liquid temperature and the corresponding pulling speed after the temperature test at present, but the manual correction mode and the manual manipulation are not uniform, so that the exposure correction is disordered, and the liquid temperature accuracy is low are solved.

Description

Technical Field

[0001] The present application relates to the technical field of monocrystalline silicon manufacturing, and in particular to an exposure correction method and an electronic device. Background Art

[0002] In the fields of photovoltaics and semiconductors, Czochralski monocrystalline silicon is a method for preparing semiconductor materials, which is a process of melting silicon materials into a liquid state and then directly pulling out a single crystal rod from the liquid silicon. During the process of Czochralski monocrystalline silicon, the temperature of the liquid silicon material (hereinafter referred to as the liquid temperature) is an important indicator. The temperature required to melt the original polysilicon material from a solid state into a liquid state is relatively high, that is, the temperature needs to reach the melting point of the polysilicon material. And during the growth of monocrystalline silicon, the temperature needs to be reduced to the crystallization point of monocrystalline silicon so that the liquid material can crystallize into solid monocrystalline silicon. However, due to the repeated use of the furnace body of the single crystal furnace, the heat preservation of each furnace body or the slow chemical reaction occurring inside the furnace body for a long time, the temperature distribution will change unevenly.

[0003] Currently, the adjustment of the liquid temperature is that the system device reflects the liquid temperature according to the displayed exposure, and then adjusts the liquid temperature in real time according to the displayed exposure. However, the system exposure is obtained by the system device through photographing the reflection of the liquid surface by a camera, so as to reflect the current actual liquid temperature through the obtained exposure. However, this way of obtaining the exposure will cause a certain deviation between the liquid temperature reflected by the exposure and the actual liquid temperature, and further lead to a low accuracy rate of the liquid temperature.

[0004] Currently, the adjustment of the exposure is to manually correct the exposure according to the drawing-in and discharging liquid temperature and the corresponding pulling speed after testing the temperature. However, in the manual correction method, the inconsistent operation methods of personnel will cause confusion in exposure correction and the problem of low accuracy rate of the liquid temperature. Summary of the Invention

[0005] The purpose of the present application is to provide an exposure correction method and an electronic device, so as to solve the problem that currently the adjustment of the exposure is to manually correct the exposure according to the drawing-in and discharging liquid temperature and the corresponding pulling speed after testing the temperature. However, in the manual correction method, the inconsistent operation methods of personnel will cause confusion in exposure correction and the problem of low accuracy rate of the liquid temperature.

[0006] According to a first aspect of the present application, an exposure correction method is provided. The exposure correction method includes:

[0007] Determine a standard pulling speed range and a standard starting liquid temperature range for seeding;

[0008] Determine the seeding pulling speed affected by a 1°C liquid temperature;

[0009] The system device obtains the system starting liquid temperature for seeding and the system pulling speed;

[0010] The system device calculates the corrected liquid temperature, where the corrected liquid temperature = reference liquid temperature - the starting liquid temperature of crystal drawing in the system; among which, the reference liquid temperature is determined by the system drawing speed, the standard drawing speed range, the standard starting liquid temperature range of crystal drawing, and the drawing speed of crystal drawing affected by a 1°C liquid temperature.

[0011] The system device calculates the target exposure according to the corrected liquid temperature.

[0012] In any of the above technical solutions, further, the standard starting liquid temperature range of crystal drawing is determined to be 1449.5°C - 1450.5°C, and the standard drawing speed range for drawing 100 mm of crystal is determined to be 280 mm / h - 320 mm / h.

[0013] The drawing speed of crystal drawing affected by a 1°C liquid temperature is determined to be 60 mm / h.

[0014] When the starting liquid temperature of crystal drawing in the system obtained by the system device is greater than or equal to 1451°C, and the drawing speed of the system for drawing 100 mm of crystal is within 0 mm / h - 250 mm / h, the corrected liquid temperature = 1451°C - the starting liquid temperature of crystal drawing in the system.

[0015] When the starting liquid temperature of crystal drawing in the system obtained by the system device is greater than or equal to 1451°C, and the drawing speed of the system for drawing 100 mm of crystal is within 250 mm / h - 280 mm / h, the corrected liquid temperature = 1451°C - the starting liquid temperature of crystal drawing in the system.

[0016] When the starting liquid temperature of crystal drawing in the system obtained by the system device is greater than or equal to 1451°C, and the drawing speed of the system for drawing 100 mm of crystal is within 280 mm / h - 320 mm / h, the corrected liquid temperature = 1450.5°C - the starting liquid temperature of crystal drawing in the system.

[0017] When the starting liquid temperature of crystal drawing in the system obtained by the system device is greater than or equal to 1451°C, and the drawing speed of the system for drawing 100 mm of crystal is within 320 mm / h - 350 mm / h, the corrected liquid temperature = 1450°C - the starting liquid temperature of crystal drawing in the system.

[0018] In any of the above technical solutions, further, when the starting liquid temperature of crystal drawing in the system obtained by the system device is greater than or equal to 1451°C, and the system device alarms that the seed crystal is too thin, the system device alarms.

[0019] When the starting liquid temperature of crystal drawing in the system obtained by the system device is greater than or equal to 1451°C, and the drawing speed of the system for drawing 100 mm of crystal is greater than 350 mm / h, the corrected liquid temperature = 1449.5°C - the starting liquid temperature of crystal drawing in the system.

[0020] In any of the above technical solutions, further, when the system starting liquid temperature obtained by the system equipment is greater than or equal to 1449.5 °C and less than 1451 °C, and the system pulling speed for crystal drawing of 100 mm is between 0 mm / h and 250 mm / h, the corrected liquid temperature = 1451 °C - the system starting liquid temperature;

[0021] When the system starting liquid temperature obtained by the system equipment is greater than or equal to 1449.5 °C and less than 1451 °C, and the system pulling speed for crystal drawing of 100 mm is between 250 mm / h and 280 mm / h, the corrected liquid temperature = 1450.3 °C - the system starting liquid temperature;

[0022] When the system starting liquid temperature obtained by the system equipment is greater than or equal to 1449.5 °C and less than 1451 °C, and the system pulling speed for crystal drawing of 100 mm is between 280 mm / h and 320 mm / h, the system equipment does not need to be corrected;

[0023] When the system starting liquid temperature obtained by the system equipment is greater than or equal to 1449.5 °C and less than 1451 °C, and the system pulling speed for crystal drawing of 100 mm is between 320 mm / h and 350 mm / h, the corrected liquid temperature = 1449.3 °C - the system starting liquid temperature.

[0024] In any of the above technical solutions, further, when the system starting liquid temperature obtained by the system equipment is greater than or equal to 1449.5 °C and less than 1451 °C, and the system equipment alarms that the seed crystal is too thin, the corrected liquid temperature = 1451 °C - the system starting liquid temperature;

[0025] When the system starting liquid temperature obtained by the system equipment is greater than or equal to 1449.5 °C and less than 1451 °C, and the system pulling speed for crystal drawing of 100 mm is greater than 350 mm / h, the corrected liquid temperature = 1449.3 °C - the system starting liquid temperature.

[0026] In any of the above technical solutions, further, when the system starting liquid temperature obtained by the system equipment is less than 1449.5 °C, and the system pulling speed for crystal drawing of 100 mm is between 0 mm / h and 250 mm / h, the corrected liquid temperature = 1451 °C - the system starting liquid temperature;

[0027] When the system starting liquid temperature obtained by the system equipment is less than 1449.5 °C, and the system pulling speed for crystal drawing of 100 mm is between 250 mm / h and 280 mm / h, the corrected liquid temperature = 1450.3 °C - the system starting liquid temperature;

[0028] When the starting liquid temperature of system crystal seeding obtained by the system device is less than 1449.5 °C, and the system pulling speed for crystal seeding of 100 mm is between 280 mm / h and 320 mm / h, the corrected liquid temperature = 1449.8 °C - the starting liquid temperature of system crystal seeding;

[0029] When the starting liquid temperature of system crystal seeding obtained by the system device is less than 1449.5 °C, and the system pulling speed for crystal seeding of 100 mm is between 320 mm / h and 350 mm / h, the corrected liquid temperature = 1449.3 °C - the starting liquid temperature of system crystal seeding.

[0030] In any of the above technical solutions, further, when the starting liquid temperature of system crystal seeding obtained by the system device is less than 1449.5 °C, and the system device alarms that the seed crystal is too thin, the corrected liquid temperature = 1451 °C - the starting liquid temperature of system crystal seeding;

[0031] When the starting liquid temperature of system crystal seeding obtained by the system device is less than 1449.5 °C, and the system pulling speed for crystal seeding of 100 mm is greater than 350 mm / h, the corrected liquid temperature = 1448.8 °C - the starting liquid temperature of system crystal seeding.

[0032] In any of the above technical solutions, further, the exposure correction method further includes:

[0033] Determine the standard shoulder broadening time interval and formulate the standard for adjusting the crystal seeding power;

[0034] Determine that the pulling speed of crystal seeding affected by 1 °C liquid temperature corresponding to 1 kW power is 60 mm / h;

[0035] Then, the target exposure = the system exposure × (1 + correction amplitude);

[0036] Correction amplitude = [corrected liquid temperature / 0.5 × 1%] + [(recommended power - previous crystal seeding power) / 0.5 × 1%].

[0037] In any of the above technical solutions, further, if [abs(target exposure - system exposure)] / system exposure ≤ 1%, no correction is required;

[0038] If [abs(target exposure - system exposure)] / system exposure > 1%, then replace the system exposure with the target exposure.

[0039] According to a second aspect of the present application, an electronic device is provided, including: a memory for storing a program;

[0040] A processor for executing the program, and the program is specifically used to implement the exposure correction method as described above.

[0041] The exposure correction method of the present application includes:

[0042] Determine the standard drawing speed range and the standard liquid temperature range at the start of crystal seeding;

[0043] Determine the crystal seeding drawing speed affected by a 1°C change in liquid temperature;

[0044] The system equipment obtains the system liquid temperature at the start of crystal seeding and the system drawing speed;

[0045] The system equipment calculates the corrected liquid temperature, where the corrected liquid temperature = reference liquid temperature - system liquid temperature at the start of crystal seeding; among them, the reference liquid temperature is determined by the system drawing speed, the standard drawing speed range, the standard liquid temperature range at the start of crystal seeding, and the crystal seeding drawing speed affected by a 1°C change in liquid temperature;

[0046] The system equipment calculates the target exposure based on the corrected liquid temperature.

[0047] Based on the above technical features, the beneficial effects of this application are as follows:

[0048] In this application, since there is a deviation between the system liquid temperature at the start of crystal seeding obtained by the system equipment and the actual liquid temperature, this application calculates the amplitude of the corrected liquid temperature that needs to be corrected through the deviation between the reference liquid temperature (the correct liquid temperature, that is, under the premise of the current system drawing speed, referring to the standard drawing speed range, the standard liquid temperature range at the start of crystal seeding, and the crystal seeding drawing speed affected by a 1°C change in liquid temperature, the actual liquid temperature corresponding to the current system drawing speed) and the current liquid temperature (system liquid temperature at the start of crystal seeding), then calculates the target exposure based on the corrected liquid temperature, and finally replaces the system exposure obtained by the system with the target exposure to make the displayed liquid temperature accurate and improve the accuracy of the liquid temperature.

[0049] To make the above objects, features, and advantages of this application more obvious and understandable, the following specifically enumerates preferred embodiments and, in conjunction with the accompanying drawings, makes a detailed description as follows. Brief Description of the Drawings

[0050] To more clearly illustrate the technical solutions of the embodiments of this application, the following will briefly introduce the drawings required to be used in the embodiments. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as limiting the scope. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.

[0051] Figure 1 A flowchart showing the correction process of the exposure correction method of this application;

[0052] Figure 2 A flowchart showing the exposure correction method of this application. Detailed Embodiments

[0053] The following specific embodiments are provided to assist the reader in obtaining a comprehensive understanding of the methods, apparatuses, and / or systems described herein. However, various changes, modifications, and equivalents of the methods, apparatuses, and / or systems described herein will be apparent after understanding the disclosure of this application. For example, the order of operations described herein is merely illustrative and is not limited to the order set forth herein, but rather changes that will be apparent after understanding the disclosure of this application may be made, except for operations that must occur in a specific order. In addition, descriptions of features known in the art may be omitted for the sake of clarity and conciseness.

[0054] The features described herein may be implemented in different forms and should not be construed as limited to the examples described herein. Rather, the examples described herein are provided only to illustrate some of the many possible ways of implementing the methods, apparatuses, and / or systems described herein that will be apparent after understanding the disclosure of this application.

[0055] Throughout the specification, when an element (such as a layer, region, or substrate) is described as "on" another element, "connected to" another element, "coupled to" another element, "above" another element, or "covering" another element, it may be directly "on," "connected to," "coupled to," "above," or "covering" the other element, or there may be one or more other elements intervening therebetween. In contrast, when an element is described as "directly on" another element, "directly connected to" another element, "directly coupled to" another element, "directly above" another element, or "directly covering" another element, there may be no other elements intervening therebetween.

[0056] As used herein, the term "and / or" includes any one of the listed related items and any combination of any two or more of them.

[0057] Although terms such as "first," "second," and "third" may be used herein to describe various members, components, regions, layers, or portions, these members, components, regions, layers, or portions are not limited by these terms. Rather, these terms are only used to distinguish one member, component, region, layer, or portion from another. Thus, the first member, component, region, layer, or portion described in the examples herein may also be referred to as the second member, component, region, layer, or portion without departing from the teachings of the examples.

[0058] For ease of description, spatial relationship terms such as "above", "upper", "below", and "lower" may be used herein to describe the relationship between one element and another as shown in the accompanying drawings. Such spatial relationship terms are intended to include different orientations of the device in use or operation in addition to the orientation depicted in the accompanying drawings. For example, if the device in the accompanying drawings is flipped, an element described as "above" or "upper" relative to another element will then be "below" or "lower" relative to the other element. Thus, the term "above" includes both the orientation of "above" and "below" depending on the spatial orientation of the device. The device may also be positioned in other ways (e.g., rotated 90 degrees or in other orientations), and the spatial relationship terms used herein will be interpreted accordingly.

[0059] The terms used herein are for the purpose of describing various examples only and are not intended to limit the present disclosure. Unless the context clearly indicates otherwise, the singular forms are also intended to include the plural forms. The terms "comprising", "including", and "having" enumerate the stated features, quantities, operations, components, elements, and / or combinations thereof that exist, but do not preclude the existence or addition of one or more other features, quantities, operations, components, elements, and / or combinations thereof.

[0060] Due to manufacturing techniques and / or tolerances, variations in the shapes shown in the accompanying drawings may occur. Therefore, the examples described herein are not limited to the specific shapes shown in the accompanying drawings, but include changes in shape that occur during manufacturing.

[0061] The features of the examples described herein can be combined in various ways that will be apparent after understanding the disclosure of the present application. In addition, although the examples described herein have various configurations, other configurations are possible as will be apparent after understanding the disclosure of the present application.

[0062] Before the present application was proposed, the adjustment of the liquid temperature was that the system equipment reflected the liquid temperature according to the displayed exposure, and then adjusted the liquid temperature in real time according to the displayed exposure. However, the system exposure was obtained by the system equipment by photographing the reflection of the liquid surface through a camera, so as to reflect the current actual liquid temperature through the obtained exposure. However, this way of obtaining the exposure would cause a certain deviation between the liquid temperature reflected by the exposure and the actual liquid temperature, and thus would result in a low accuracy rate of the liquid temperature. Currently, the adjustment of the exposure is manually corrected by the operator after testing the temperature according to the drawn liquid temperature and the corresponding drawing speed. However, in the manual correction method, the inconsistent operation of the personnel will lead to the problem of chaotic exposure correction and low accuracy rate of the liquid temperature.

[0063] In view of this, the first aspect of the present application provides an exposure correction method, thereby solving the above technical problems.

[0064] As Figure 2 shown, the exposure correction method of this application includes:

[0065] Determine the current company's standard drawing speed range and standard starting liquid temperature range for crystal pulling through big data analysis.

[0066] Determine the crystal pulling speed affected by a 1°C liquid temperature through big data analysis.

[0067] Determine the process standard shoulder release time range for different sizes and formulate the standard for adjusting the crystal pulling power.

[0068] Determine the influence range of power on the crystal pulling speed under the thermal field conditions of this company through big data analysis.

[0069] Formulate the exposure correction logic based on the results of big data analysis combined with the actual situation on site.

[0070] Write the logic into the program, automatically calculate and write it to the furnace platform.

[0071] Conduct on-line verification, fine-tune the exposure configuration according to the actual situation, and match different thermal fields and product processes.

[0072] Among them, formulating the exposure correction logic based on the results of big data analysis combined with the actual situation on site includes:

[0073] The system equipment obtains the starting liquid temperature for crystal pulling of the system and the drawing speed of the system.

[0074] The system equipment calculates the corrected liquid temperature, where the corrected liquid temperature = reference liquid temperature - starting liquid temperature for crystal pulling of the system; among them, the reference liquid temperature is determined by the drawing speed of the system, the standard drawing speed range, the standard starting liquid temperature range for crystal pulling, and the crystal pulling speed affected by a 1°C liquid temperature.

[0075] The system equipment calculates the target exposure based on the corrected liquid temperature.

[0076] That is to say, in this application, because there is a deviation between the starting liquid temperature for crystal pulling of the system obtained by the system equipment and the actual liquid temperature, therefore, in this application, the amplitude of the corrected liquid temperature to be corrected is calculated through the deviation between the reference liquid temperature (the correct liquid temperature, that is, under the premise of the current system drawing speed, determined by referring to the standard drawing speed range, the standard starting liquid temperature range for crystal pulling, and the crystal pulling speed affected by a 1°C liquid temperature, the actual liquid temperature corresponding to the current system drawing speed) and the current liquid temperature (the starting liquid temperature for crystal pulling of the system), and then the target exposure is calculated through the corrected liquid temperature, and finally the target exposure replaces the system exposure obtained by the system, so that the displayed liquid temperature is accurate to improve the liquid temperature accuracy.

[0077] The following will refer to the following table and Figure 1 describe the exposure correction logic. The following will describe the exposure correction logic by taking the data of this company as an example.

[0078] Taking our company as an example: The standard starting liquid temperature range for crystal seeding is 1449.5°C - 1450.5°C. The standard pulling speed range for crystal seeding of 100 mm is 280 mm / hr - 320 mm / hr. A 1°C change in liquid temperature approximately affects the pulling speed of crystal seeding by 60 mm / hr. A 1 kW power approximately corresponds to a 1°C change in liquid temperature affecting 60 pulling speeds.

[0079] The calibration logic standard is:

[0080]

[0081]

[0082] As shown in the above table:

[0083] When the system starting liquid temperature obtained by the system equipment is greater than or equal to 1451°C, and the system pulling speed for crystal seeding of 100 mm is between 280 mm / h - 320 mm / h, the calibrated liquid temperature = 1450.5°C - the system starting liquid temperature. It should be noted here that when the system pulling speed is between 280 mm / h - 320 mm / h, it exactly meets the standard pulling speed range (280 mm / hr - 320 mm / hr) for crystal seeding of 100 mm. Therefore, the actual liquid temperature corresponding to the system pulling speed should be within the standard starting liquid temperature range (1449.5°C - 1450.5°C). Here, since the system starting liquid temperature is greater than or equal to 1451°C and the system starting liquid temperature is on the high side, the reference liquid temperature is selected as 1450.5°C. Then the calibrated liquid temperature at this time is 1450.5°C - the system starting liquid temperature.

[0084] And so on, when the system starting liquid temperature obtained by the system equipment is greater than or equal to 1451°C, and the system pulling speed for crystal seeding of 100 mm is between 320 mm / h - 350 mm / h, the calibrated liquid temperature = 1450°C - the system starting liquid temperature. It should be noted here that in this case, the system pulling speed is between 320 mm / h - 350 mm / h, and it differs from the standard pulling speed range (280 mm / hr - 320 mm / hr) for crystal seeding of 100 mm by approximately 30 pulling speeds (30 mm / hr). Therefore, the reference liquid temperature is selected as 1450.5°C - 0.5°C, that is, 1450°C. Then the calibrated liquid temperature at this time is 1450°C - the system starting liquid temperature.

[0085] And so on, when the system ingot-starting liquid temperature obtained by the system equipment is greater than or equal to 1451 °C, and the system pulling speed for ingot drawing of 100 mm is greater than 350 mm / h, the corrected liquid temperature = 1449.5 °C - the system ingot-starting liquid temperature. It should be noted here that in this case, since the system pulling speed is greater than 350 mm / h, it differs from the standard pulling speed range (280 mm / hr - 320 mm / hr) for ingot drawing of 100 mm by approximately 60 pulling speeds (30 mm / hr). Therefore, the reference liquid temperature is selected as 1450.5 °C - 1 °C, that is, 1449.5 °C. Then the corrected liquid temperature at this time is 1449.5 °C - the system ingot-starting liquid temperature.

[0086] And so on, when the system ingot-starting liquid temperature obtained by the system equipment is greater than or equal to 1451 °C, and the system pulling speed for ingot drawing of 100 mm is between 250 mm / h and 280 mm / h, the reference liquid temperature = 1451 °C - the system ingot-starting liquid temperature. It should be noted here that in this case, since the system pulling speed is between 250 mm / h and 280 mm / h, it differs from the standard pulling speed range (280 mm / hr - 320 mm / hr) for ingot drawing of 100 mm by approximately 30 pulling speeds (30 mm / hr). Therefore, the reference liquid temperature is selected as 1450.5 °C + 0.5 °C, that is, 1451 °C. Then the corrected liquid temperature at this time is 1451 °C - the system ingot-starting liquid temperature.

[0087] And so on, when the system ingot-starting liquid temperature obtained by the system equipment is greater than or equal to 1451 °C, and the system pulling speed for ingot drawing of 100 mm is between 0 mm / h and 250 mm / h, the corrected liquid temperature = 1451 °C - the system ingot-starting liquid temperature. It should be noted here that in this case, since the system pulling speed is between 0 mm / h and 250 mm / h, it differs from the standard pulling speed range (280 mm / hr - 320 mm / hr) for ingot drawing of 100 mm by at least 30 pulling speeds (30 mm / hr). Therefore, the reference liquid temperature is selected as the maximum upper limit value of 1451 °C. Then the corrected liquid temperature at this time is 1451 °C - the system ingot-starting liquid temperature.

[0088] And so on, when the system ingot-starting liquid temperature obtained by the system equipment is greater than or equal to 1451 °C, and the system equipment alarms that the seed crystal is too thin, the system equipment alarms and manual intervention for review is required.

[0089] Similarly, as shown in the above table, when the starting liquid temperature of system crystal seeding obtained by the system equipment is greater than or equal to 1449.5 °C and less than 1451 °C, and the system pulling speed for crystal seeding of 100 mm is between 280 mm / h and 320 mm / h, the system equipment does not need to be calibrated. It should be noted here that when the system pulling speed is between 280 mm / h and 320 mm / h, it exactly meets the standard pulling speed range (280 mm / hr - 320 mm / hr) for crystal seeding of 100 mm, and the starting liquid temperature of system crystal seeding also basically coincides with the standard starting liquid temperature range (1449.5 °C - 1450.5 °C). Therefore, the calibration liquid temperature does not need to be calibrated. Or in other words, here because the starting liquid temperature of system crystal seeding is greater than or equal to 1449.5 °C and less than 1451 °C, the starting liquid temperature of system crystal seeding is on the low side, so the reference liquid temperature is selected as 1450 °C. The reference liquid temperature of 1450 °C is between 1449.5 °C and 1451 °C, so the calibration liquid temperature does not need to be calibrated.

[0090] And so on, when the starting liquid temperature of system crystal seeding obtained by the system equipment is greater than or equal to 1449.5 °C and less than 1451 °C, and the system pulling speed for crystal seeding of 100 mm is between 320 mm / h and 350 mm / h, the calibration liquid temperature = 1449.3 °C - the starting liquid temperature of system crystal seeding. It should be noted here that in this case, since the system pulling speed is between 320 mm / h and 350 mm / h, it differs from the standard pulling speed range (280 mm / hr - 320 mm / hr) for crystal seeding of 100 mm by approximately 30 pulling speeds (30 mm / hr). Therefore, the reference liquid temperature is selected as 1450 °C - 0.5 °C - 0.2 °C, that is, 1449.3 °C. Then the calibration liquid temperature at this time is 1449.3 °C - the starting liquid temperature of system crystal seeding. It should be noted here that because the starting liquid temperature of system crystal seeding is on the low side, the reference liquid temperature can also be selected as 1450 °C - 0.2 °C. Thus, according to experiments, the calibration is more accurate.

[0091] And so on, when the starting liquid temperature of system crystal seeding obtained by the system equipment is greater than or equal to 1449.5 °C and less than 1451 °C, and the system pulling speed for crystal seeding of 100 mm is greater than 350 mm / h, the calibration liquid temperature = 1449.3 °C - the starting liquid temperature of system crystal seeding. It should be noted here that in this case, since the system pulling speed is greater than 350 mm / h, it differs from the standard pulling speed range (280 mm / hr - 320 mm / hr) for crystal seeding of 100 mm by at least 30 pulling speeds (30 mm / hr). Therefore, the reference liquid temperature is selected as the minimum lower limit value of 1449.3 °C, that is, 1449.3 °C. Then the calibration liquid temperature at this time is 1449.3 °C - the starting liquid temperature of system crystal seeding.

[0092] And so on, when the initial liquid temperature of system crystal seeding obtained by the system equipment is greater than or equal to 1449.5 °C and less than 1451 °C, and the system pulling speed for crystal seeding of 100 mm is between 250 mm / h and 280 mm / h, the corrected liquid temperature = 1450.3 °C - the initial liquid temperature of system crystal seeding. It should be noted here that in this case, since the system pulling speed is between 250 mm / h and 280 mm / h, and it differs from the standard pulling speed range (280 mm / hr - 320 mm / hr) for crystal seeding of 100 mm by approximately 30 pulling speeds (30 mm / hr), the reference liquid temperature is selected as 1450 °C + 0.5 °C - 0.2 °C, that is, 1450.3 °C. Then the corrected liquid temperature at this time is 1450.3 °C - the initial liquid temperature of system crystal seeding.

[0093] And so on, when the initial liquid temperature of system crystal seeding obtained by the system equipment is greater than or equal to 1449.5 °C and less than 1451 °C, and the system pulling speed for crystal seeding of 100 mm is between 0 mm / h and 250 mm / h, the corrected liquid temperature = 1451 °C - the initial liquid temperature of system crystal seeding. It should be noted here that in this case, since the system pulling speed is between 0 mm / h and 250 mm / h, and it differs from the standard pulling speed range (280 mm / hr - 320 mm / hr) for crystal seeding of 100 mm by at least 30 pulling speeds (30 mm / hr), the reference liquid temperature is selected as the maximum upper limit value of 1451 °C. Then the corrected liquid temperature at this time is 1451 °C - the initial liquid temperature of system crystal seeding.

[0094] And so on, when the initial liquid temperature of system crystal seeding obtained by the system equipment is greater than or equal to 1449.5 °C and less than 1451 °C, and the system equipment alarms that the seed crystal is too thin, the corrected liquid temperature = 1451 °C - the initial liquid temperature of system crystal seeding. It should be noted here that in this case, when the system equipment alarms that the seed crystal is too thin, the reference liquid temperature is selected as the maximum upper limit value of 1451 °C. Then the corrected liquid temperature at this time is 1451 °C - the initial liquid temperature of system crystal seeding.

[0095] Similarly, as shown in the above table, when the initial liquid temperature of system crystal seeding obtained by the system equipment is less than 1449.5 °C, and the system pulling speed for crystal seeding of 100 mm is between 280 mm / h and 320 mm / h, the corrected liquid temperature = 1449.8 °C - the initial liquid temperature of system crystal seeding. It should be noted here that since the system pulling speed is between 280 mm / h and 320 mm / h, it exactly meets the standard pulling speed range (280 mm / hr - 320 mm / hr) for crystal seeding of 100 mm. Therefore, the actual liquid temperature corresponding to the system pulling speed should be within the standard initial liquid temperature range (1449.5 °C - 1450.5 °C). Here, because the initial liquid temperature of system crystal seeding is less than 1449.5 °C and the initial liquid temperature of system crystal seeding is on the low side, the reference liquid temperature is selected as 1450 °C - 0.2 °C. Then the corrected liquid temperature at this time is 1449.8 °C - the initial liquid temperature of system crystal seeding.

[0096] And so on, when the starting liquid temperature of system crystal seeding obtained by the device is less than 1449.5°C, and the system pulling speed for crystal seeding of 100 mm is between 320 mm / h and 350 mm / h, the corrected liquid temperature = 1449.3°C - the starting liquid temperature of system crystal seeding. It should be noted here that in this case, since the system pulling speed is between 320 mm / h and 350 mm / h, which is approximately 30 pulling speeds (30 mm / h) different from the standard pulling speed range (280 mm / hr - 320 mm / hr) for crystal seeding of 100 mm, the reference liquid temperature is selected as 1450°C - 0.5°C - 0.2°C, that is, 1449.3°C. Then the corrected liquid temperature at this time is 1449.3°C - the starting liquid temperature of system crystal seeding.

[0097] And so on, when the starting liquid temperature of system crystal seeding obtained by the system device is less than 1449.5°C, and the system pulling speed for crystal seeding of 100 mm is greater than 350 mm / h, the corrected liquid temperature = 1448.8°C - the starting liquid temperature of system crystal seeding. It should be noted here that in this case, since the system pulling speed is greater than 350 mm / h, which is at least 30 pulling speeds (30 mm / h) different from the standard pulling speed range (280 mm / hr - 320 mm / hr) for crystal seeding of 100 mm, the reference liquid temperature is selected as 1450°C - 1°C - 0.2°C, that is, 1448.8°C. Then the corrected liquid temperature at this time is 1448.8°C - the starting liquid temperature of system crystal seeding.

[0098] And so on, when the starting liquid temperature of system crystal seeding obtained by the system device is less than 1449.5°C, and the system pulling speed for crystal seeding of 100 mm is between 250 mm / h and 280 mm / h, the corrected liquid temperature = 1450.3°C - the starting liquid temperature of system crystal seeding. It should be noted here that in this case, since the system pulling speed is between 250 mm / h and 280 mm / h, which is approximately 30 pulling speeds (30 mm / h) different from the standard pulling speed range (280 mm / hr - 320 mm / hr) for crystal seeding of 100 mm, the reference liquid temperature is selected as 1450°C + 0.5°C - 0.2°C, that is, 1450.3°C. Then the corrected liquid temperature at this time is 1450.3°C - the starting liquid temperature of system crystal seeding.

[0099] And so on, when the starting liquid temperature of system crystal seeding obtained by the system device is less than 1449.5°C, and the system pulling speed for crystal seeding of 100 mm is between 0 mm / h and 250 mm / h, the corrected liquid temperature = 1451°C - the starting liquid temperature of system crystal seeding. It should be noted here that in this case, since the system pulling speed is between 0 mm / h and 250 mm / h, which is at least 30 pulling speeds (30 mm / h) different from the standard pulling speed range (280 mm / hr - 320 mm / hr) for crystal seeding of 100 mm, the reference liquid temperature is selected as the maximum upper limit value of 1451°C. Then the corrected liquid temperature at this time is 1451°C - the starting liquid temperature of system crystal seeding.

[0100] In addition, it should be noted that when there are repeated critical values in each interval of the system pulling speed for seeding 100mm, the critical value should belong to the smaller interval. For example, when the system pulling speed for seeding 100mm is 250mm / h, 250mm / h should belong to the range of 0 - 250mm / h, rather than 250 - 280mm / h.

[0101] When the initial liquid temperature for seeding obtained by the system equipment is less than 1449.5°C and the system equipment alarms that the seed crystal is too thin, the corrected liquid temperature = 1451°C - the initial liquid temperature for seeding of the system. Here, it should be noted that in this case, when the system equipment alarms that the seed crystal is too thin, the reference liquid temperature selects the maximum upper limit value of 1451°C. Then the corrected liquid temperature at this time is 1451°C - the initial liquid temperature for seeding of the system.

[0102] In summary, according to the calculation in the above table, after the corrected liquid temperature, it is uniformly converted into a correction amplitude for convenient correction calculation.

[0103] Then, the correction amplitude = [corrected liquid temperature / 0.5 × 1%] + [(recommended power - power of the previous seeding) / 0.5 × 1%]. Among them, the recommended power formulates the standard for adjusting the seeding power according to the standard shoulder release time interval. The power of the previous seeding is the system seeding power of the previous crystal pulling.

[0104] Then, the target exposure = system exposure × [1 + correction amplitude (%)].

[0105] If [abs(target exposure - system exposure)] / system exposure ≤ 1%, no correction is required.

[0106] If [abs(target exposure - system exposure)] / system exposure > 1%, then replace the system exposure with the corrected target exposure and write it into the system exposure.

[0107] In summary, in this application, because there is a deviation between the initial liquid temperature for seeding obtained by the system equipment and the actual liquid temperature, this application calculates the correction amplitude of the corrected liquid temperature that needs to be corrected through the deviation between the reference liquid temperature (the correct liquid temperature, that is, under the premise of the current system pulling speed, determined by referring to the standard pulling speed interval, the standard initial liquid temperature interval for seeding, and the pulling speed of seeding affected by 1°C liquid temperature, the actual liquid temperature corresponding to the current system pulling speed) and the current liquid temperature (the initial liquid temperature for seeding of the system), then calculates the target exposure through the corrected liquid temperature, and finally replaces the system exposure obtained by the system with the target exposure.

[0108] The exposure correction method of this application unifies the correction method and improves standardization. To solve the problem of chaotic exposure correction. Make the liquid temperature display accurate to improve the accuracy rate of the liquid temperature. Can improve the accuracy rate of the liquid temperature, shorten the working hours for temperature adjustment. Reduce the skills of personnel, reduce the waste of working hours for temperature adjustment caused by inaccurate liquid temperature. Can achieve a liquid temperature accuracy rate > 90%, improve the connection of automated process steps.

[0109] The second aspect of the present application provides an electronic device, including: a memory for storing a program; a processor for executing the program, and the program is specifically used to implement the liquid temperature calibration determination method for data analysis as described in any one of the above.

[0110] Finally, it should be noted that: the above embodiments are only specific implementation manners of the present application, used to illustrate the technical solutions of the present application, rather than limiting it. The protection scope of the present application is not limited thereto. Although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: any person skilled in the art within the technical scope disclosed by the present application can still modify the technical solutions recorded in the foregoing embodiments or can easily think of changes, or perform equivalent replacements on some of the technical features; and these modifications, changes or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be covered within the protection scope of the present application.

Claims

1. An exposure correction method, characterized in that: The exposure correction method comprises: Determine the standard pulling speed range and the standard seeding start liquid temperature range; Determine the effect of 1℃ liquid temperature on seeding speed; The system equipment obtains the system seeding start liquid temperature and system pulling speed; The system equipment calculates the corrected liquid temperature, which is the reference liquid temperature minus the system seeding start liquid temperature; wherein the reference liquid temperature is determined by the system pulling speed, the standard pulling speed interval, the standard seeding start liquid temperature interval, and the seeding pulling speed affected by 1°C liquid temperature; The system device calculates the target exposure according to the correction fluid temperature.

2. The exposure correction method according to claim 1, characterized in that: The standard crystal seeding start liquid temperature range is determined to be 1449.5℃-1450.5℃, and the standard crystal seeding speed range of 100mm is determined to be 280mm / h-320mm / h; It is determined that the seeding pulling speed affected by 1°C liquid temperature is 60mm / h; When the system seeding start liquid temperature obtained by the system equipment is greater than or equal to 1451°C, and the system pulling speed of seeding 100mm is between 0mm / h-250mm / h, the corrected liquid temperature = 1451°C - the system seeding start liquid temperature; When the system seeding start liquid temperature obtained by the system equipment is greater than or equal to 1451°C, and the system pulling speed of seeding 100mm is between 250mm / h and 280mm / h, the corrected liquid temperature = 1451°C - the system seeding start liquid temperature; When the system seeding start liquid temperature obtained by the system equipment is greater than or equal to 1451°C, and the system pulling speed of seeding 100mm is between 280mm / h and 320mm / h, the corrected liquid temperature = 1450.5°C - the system seeding start liquid temperature; When the system seeding start liquid temperature obtained by the system equipment is greater than or equal to 1451°C, and the system pulling speed of 100mm seeding is between 320mm / h and 350mm / h, the corrected liquid temperature = 1450°C - the system seeding start liquid temperature.

3. The exposure correction method according to claim 2, characterized in that: When the system seeding start liquid temperature obtained by the system device is greater than or equal to 1451° C., and the system device warns that the seed crystal is too thin, the system device warns; When the system seeding start liquid temperature obtained by the system equipment is greater than or equal to 1451°C, and the system pulling speed of 100mm seeding is greater than 350mm / h, the corrected liquid temperature = 1449.5°C - the system seeding start liquid temperature.

4. The exposure correction method according to claim 2, characterized in that: When the system seeding start liquid temperature obtained by the system equipment is greater than or equal to 1449.5°C and less than 1451°C, and the system pulling speed of seeding 100mm is between 0mm / h-250mm / h, the corrected liquid temperature = 1451°C - the system seeding start liquid temperature; When the system seeding start liquid temperature obtained by the system equipment is greater than or equal to 1449.5°C and less than 1451°C, and the system pulling speed of seeding 100mm is between 250mm / h-280mm / h, the corrected liquid temperature = 1450.3°C - the system seeding start liquid temperature; When the system seeding start liquid temperature obtained by the system equipment is greater than or equal to 1449.5°C and less than 1451°C, and the system pulling speed of the seeding 100mm is between 280mm / h-320mm / h, the system equipment does not need to be calibrated; When the system seeding start liquid temperature obtained by the system equipment is greater than or equal to 1449.5°C and less than 1451°C, and the system pulling speed of seeding 100mm is between 320mm / h-350mm / h, the corrected liquid temperature = 1449.3°C - the system seeding start liquid temperature.

5. The exposure correction method according to claim 4, characterized in that: When the system seeding start liquid temperature obtained by the system equipment is greater than or equal to 1449.5°C and less than 1451°C, and the system equipment warns that the seed crystal is too thin, the correction liquid temperature = 1451°C - the system seeding start liquid temperature; When the system seeding start liquid temperature obtained by the system equipment is greater than or equal to 1449.5°C and less than 1451°C, and the system pulling speed of seeding 100mm is greater than 350mm / h, the corrected liquid temperature = 1449.3°C - the system seeding start liquid temperature.

6. The exposure correction method according to claim 2, characterized in that: When the system seeding start liquid temperature obtained by the system equipment is less than 1449.5°C, and the system pulling speed of seeding 100mm is between 0mm / h-250mm / h, the corrected liquid temperature = 1451°C - the system seeding start liquid temperature; When the system seeding start liquid temperature obtained by the system equipment is less than 1449.5°C, and the system pulling speed of seeding 100mm is between 250mm / h and 280mm / h, the corrected liquid temperature = 1450.3°C - the system seeding start liquid temperature; When the system seeding start liquid temperature obtained by the system equipment is less than 1449.5°C, and the system pulling speed of seeding 100mm is between 280mm / h and 320mm / h, the corrected liquid temperature = 1449.8°C - the system seeding start liquid temperature; When the system seeding start liquid temperature obtained by the system equipment is less than 1449.5°C, and the system pulling speed of 100mm seeding is between 320mm / h and 350mm / h, the corrected liquid temperature = 1449.3°C - the system seeding start liquid temperature.

7. The exposure correction method according to claim 6, characterized in that: When the system seeding start liquid temperature obtained by the system equipment is less than 1449.5°C, and the system equipment warns that the seed crystal is too thin, the correction liquid temperature = 1451°C - the system seeding start liquid temperature; When the system seeding start liquid temperature obtained by the system equipment is less than 1449.5°C, and the system pulling speed of 100mm seeding is greater than 350mm / h, the corrected liquid temperature = 1448.8°C - the system seeding start liquid temperature.

8. The exposure correction method according to claim 2, characterized in that: The exposure correction method further comprises: Determine the standard shoulder release time interval and formulate the seeding power adjustment standard; Determine that the seeding speed affected by 1 kW power and 1°C liquid temperature is 60 mm / h; Then, target exposure = system exposure × (1 + correction amplitude); Correction range = [corrected liquid temperature / 0.5×1%] + [(recommended power - last seeding power) / 0.5×1%].

9. The exposure correction method according to claim 8, characterized in that: If [abs(target exposure - system exposure)] / system exposure ≤ 1%, no correction is required; If [abs(target exposure-system exposure)] / system exposure>1%, the system exposure is replaced by the target exposure.

10. An electronic device, characterized in that: include: Memory, used to store programs; A processor is used to execute the program, wherein the program is specifically used to implement the exposure correction method as described in any one of claims 1 to 9.

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