Light emitting device

Abstract

The purpose of the present invention is to improve the light extraction efficiency of a light-emitting device having a luminance distribution on a light-emitting surface. A light-emitting device according to one embodiment of the present invention comprises: a wavelength conversion member; the substrate is provided with an upper surface, a lower surface positioned on the opposite side of the upper surface, a first side surface arranged between the upper surface and the lower surface, and a second side surface arranged between the upper surface and the lower surface and positioned on the opposite side of the first side surface; a light-emitting part disposed on one side of the first side surface of the lower surface of the wavelength conversion member and having a light-emitting layer; and a light adjusting member disposed on one side of the second side surface of the upper surface of the wavelength conversion member and not overlapping the light emitting layer in a plan view.

Description

Technical Field

[0001] The present disclosure relates to a light-emitting device. Background Art

[0002] As a light source for vehicle lamps, a light-emitting element such as an LED (Light Emitting Diode) is used. Patent Document 1 discloses a light-emitting device that makes a light-emitting surface have a luminance distribution by combining a plurality of light-emitting elements having different areas.

[0003] <Prior Art Documents>

[0004] <Patent Documents>

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2017-011259 Summary of the Invention

[0006] <Problems to be Solved by the Invention>

[0007] An object of the present disclosure is to improve the light extraction efficiency of a light-emitting device having a luminance distribution on a light-emitting surface.

[0008] <Means for Solving the Problems>

[0009] A light-emitting device according to an embodiment of the present disclosure includes: a wavelength conversion member having an upper surface, a lower surface opposite to the upper surface, a first side surface disposed between the upper surface and the lower surface, and a second side surface disposed between the upper surface and the lower surface and opposite to the first side surface; a light-emitting portion disposed on one side of the first side surface of the lower surface of the wavelength conversion member and having a light-emitting layer; and a light adjustment member disposed on one side of the second side surface of the upper surface of the wavelength conversion member and not overlapping with the light-emitting layer in a plan view.

[0010] <Effects of the Invention>

[0011] According to an embodiment of the present disclosure, it is possible to improve the light extraction efficiency of a light-emitting device having a luminance distribution on a light-emitting surface. Brief Description of the Drawings

[0012] Figure 1 is a plan view schematically showing an example of the overall structure of the light-emitting device according to the first embodiment.

[0013] Figure 2 is schematically showing Figure 1 a cross-sectional view of the II-II line of

[0014] Figure 3 is a schematic cross-sectional view for explaining an example of the operation of the light-emitting device according to the first embodiment.

[0015] Figure 4 It is a cross-sectional view schematically showing a method of manufacturing a light-emitting device according to the first embodiment.

[0016] Figure 5 It is a cross-sectional view schematically showing a method of manufacturing a light-emitting device according to the first embodiment.

[0017] Figure 6 It is a cross-sectional view schematically showing a method of manufacturing a light-emitting device according to the first embodiment.

[0018] Figure 7 It is a cross-sectional view schematically showing a method of manufacturing a light-emitting device according to the first embodiment.

[0019] Figure 8 It is a cross-sectional view schematically showing a method of manufacturing a light-emitting device according to the first embodiment.

[0020] Figure 9 It is a cross-sectional view schematically showing a method of manufacturing a light-emitting device according to the first embodiment.

[0021] Figure 10 It is a cross-sectional view schematically showing a method of manufacturing a light-emitting device according to the first embodiment.

[0022] Figure 11 It is a cross-sectional view schematically showing a light-emitting device according to a modified example of the first embodiment.

[0023] Figure 12 It is a cross-sectional view schematically showing another modified example of the first embodiment.

[0024] Figure 13 It is a cross-sectional view schematically showing an example of the overall structure of a light-emitting device according to the second embodiment.

[0025] Figure 14 It is a schematic cross-sectional view for explaining an example of the operation of a light-emitting device according to the second embodiment.

[0026] Figure 15 It is a cross-sectional view schematically showing an example of the overall structure of a light-emitting device according to the third embodiment.

[0027] Figure 16 It is a cross-sectional view schematically showing a light-emitting device according to a modified example of the third embodiment.

[0028] Figure 17 It is a cross-sectional view schematically showing an example of the overall structure of a light-emitting device according to the fourth embodiment.

[0029] Figure 18It is a cross-sectional view schematically showing a light-emitting device as a modification of the fourth embodiment.

[0030] Figure 19 It is a cross-sectional view schematically showing an example of the overall structure of the light-emitting device according to the fifth embodiment.

[0031] Figure 20 It is a cross-sectional view schematically showing the light-emitting device 1R of Reference Example 1.

[0032] Figure 21 It is a graph showing the relative luminance as a result of optical simulation of Example 1, Example 2, and Reference Example 1.

[0033] Symbol Explanation

[0034] 1, 1A, 1B, 2, 3, 3A, 4, 4A, 5 Light-emitting device

[0035] 10 Wavelength conversion member

[0036] 11 Upper surface

[0037] 11a First upper surface

[0038] 11b Second upper surface

[0039] 12 Lower surface

[0040] 13a First side surface

[0041] 13b Second side surface

[0042] 20, 20C, 20D, 20E Light-emitting element

[0043] 21, 21C Light-emitting part

[0044] 211 First semiconductor layer

[0045] 212 Light-emitting layer

[0046] 213, 213C Second semiconductor layer

[0047] 30, 30D, 30E Light-transmissive member

[0048] 40 Light adjustment member

[0049] 50, 50B, 50C Light reflection film

[0050] 60, 60D, 60F, 60G, 60H Covering member

[0051] 70 Wiring substrate

[0052] 71 Base material

[0053] 72, 72c First metal layer

[0054] 73, 73a, 73b, 73c Second metal layer

[0055] 74a, 74b, 74c, 74d Third metal layer

[0056] 81, 82, 83, 84 Bonding component

[0057] 86a, 86b, 86c, 86d Third bonding component

[0058] 90, 90G Support

[0059] 91 Light-reflective component

[0060] 92, 92H Protection element Detailed implementation mode

[0061] Hereinafter, the light-emitting device according to the embodiment of the present disclosure will be described in detail with reference to the accompanying drawings. However, the following-described mode is an example of the light-emitting device that embodies the technical idea of the present disclosure and is not limited thereto. In addition, the dimensions, materials, shapes, relative arrangements, etc. of the structural parts described in the embodiment are only illustrative examples unless otherwise specified, and the scope of the present disclosure is not limited thereto. In addition, for the sake of clear explanation, the sizes, positional relationships, etc. of the components shown in each drawing may be enlarged. In the following description, the same names and symbols represent the same or homogeneous components, and detailed descriptions are appropriately omitted. As a sectional view, an end view showing only the cut surface may sometimes be used.

[0062] In the following-described drawings, directions are sometimes indicated by the X-axis, Y-axis, and Z-axis. The X-axis, Y-axis, and Z-axis are mutually orthogonal directions.

[0063] In the X direction, the direction indicated by the arrow is the +X direction or the +X side, and the direction opposite to the +X direction is the -X direction or the -X side. In the Y direction, the direction indicated by the arrow is the +Y direction or the +Y side, and the direction opposite to the +Y direction is the -Y direction or the -Y side. In the Z direction, the direction indicated by the arrow is the +Z direction or the +Z side, and the direction opposite to the +Z direction is the -Z direction or the -Z side. Additionally, in the terms of the embodiments, a top view means the situation observed from the +Z direction. However, the above does not limit the direction when using the light-emitting device, and the orientation of the light-emitting device is arbitrary. Further, in the present embodiment, the surface in the +Z direction (i.e., the surface of the object when observed from the +Z direction) is regarded as the "upper surface", and the surface in the -Z direction (i.e., the surface of the object when observed from the -Z direction) is regarded as the "lower surface". In the embodiments shown below, the meaning of along the X-axis, Y-axis, and Z-axis includes the situation where the inclination of the object with respect to these axes is within the range of ±10°. Additionally, the orthogonality in the embodiments may also include the situation where the error with respect to 90° is within ±10°.

[0064] In addition, in the present disclosure, unless otherwise specified, regarding polygons such as rectangles, the shape including processing such as chamfering, edge chamfering, corner removal, and rounding of the corners of the polygon is referred to as a polygon. Further, not limited to the corners (i.e., the ends of the sides), the shape processed in the middle part of the side is also referred to as a polygon. That is, the shape obtained by local processing while maintaining the polygon is also included in the interpretation of the "polygon" described in the present invention.

[0065] In addition, not limited to polygons, the same interpretation applies to terms representing specific shapes such as trapezoids, circles, concavities and convexities. Further, the same applies to the terms regarding the respective sides forming the shape. That is, for a certain side, even if its corner or middle part is processed, the processed part is included in the interpretation of the "side".

[0066] In addition, "covering" or "overlaying" is not limited to direct contact, and also includes indirect contact, such as covering via other components. In addition, "arranging" is not limited to direct contact, and also includes indirect contact, such as arranging via other components.

[0067] [First Embodiment]

[0068] <Example of the overall structure of the light-emitting device 1>

[0069] Refer to Figure 1 and Figure 2 , and an example of the overall structure of the light-emitting device 1 according to the first embodiment will be described. Figure 1 is a top view schematically showing an example of the overall structure of the light-emitting device 1 according to the first embodiment. Figure 2 is schematically showing Figure 1Cross-sectional view of the cross-section along line II-II.

[0070] In Figure 1 and Figure 2 In the example shown, the light-emitting device 1 includes a wavelength conversion member 10, a light-emitting element 20, and a light adjustment member 40. The light-emitting element 20 includes a light-emitting portion 21 and a light-transmitting member 30. However, the light-emitting element 20 may not include the light-transmitting member 30. When the light-emitting element 20 does not include the light-transmitting member 30, the light-emitting device 1 includes a wavelength conversion member 10, a light-emitting portion 21, and a light adjustment member 40. The light-emitting device 1 may further include a light reflection film 50, a covering member 60, a wiring substrate 70, and joining members 81, 82. Additionally, the light-emitting device 1 may not include the joining member 81.

[0071] <Wavelength conversion member 10>

[0072] The structure of the wavelength conversion member 10 will be described below. The wavelength conversion member 10 converts the wavelength of at least a part of the light emitted from the light-emitting portion 21. As Figure 2 shown, the wavelength conversion member 10 has an upper surface 11, a lower surface 12, a first side surface 13a, and a second side surface 13b.

[0073] In Figure 2 the example shown, the upper surface 11 has a first upper surface 11a and a second upper surface 11b. The first upper surface 11a is disposed on the +X side with respect to the second upper surface 11b. The second upper surface 11b is located at a lower position (i.e., the -Z side) than the first upper surface 11a. In the wavelength conversion member 10, the thickness between the second upper surface 11b and the lower surface 12 is smaller than the thickness between the first upper surface 11a and the lower surface 12.

[0074] The first upper surface 11a and the second upper surface 11b are connected by an inner wall surface 14. As Figure 2 shown, the inner wall surface 14 connects the outer edge on the -X side of the first upper surface 11a and the outer edge on the +X side of the second upper surface 11b. The first upper surface 11a, the inner wall surface 14, and the second upper surface 11b make the upper surface 11 of the wavelength conversion member 10 have a stepped region.

[0075] In Figure 2 the example shown, the inner wall surface 14 is located on the -X side of the light-emitting portion 21 in a plan view. That is, in a plan view, the second upper surface 11b does not overlap with the light-emitting portion 21.

[0076] In Figure 2In the example shown, the upper surface 11 of the wavelength conversion member 10 includes a plurality of regions such as a first upper surface 11a and a second upper surface 11b that have different positions in the Z-axis direction with respect to the lower surface 12. However, it is not limited thereto. For example, the upper surface 11 of the wavelength conversion member 10 may also be a flat surface parallel to the X-axis direction and the Y-axis direction.

[0077] The first side surface 13a is disposed between the upper surface 11 and the lower surface 12. Figure 2 In the example shown, the first side surface 13a connects between the first upper surface 11a and the outer edge on the +X side of the lower surface 12. The first side surface 13a is the side surface on the +X side of the wavelength conversion member 10. The second side surface 13b is disposed between the upper surface 11 and the lower surface 12 and is located on the opposite side of the first side surface 13a. Figure 2 In the example shown, the second side surface 13b connects between the second upper surface 11b and the outer edge on the -X side of the lower surface 12. The second side surface 13b is the side surface on the -X side of the wavelength conversion member 10.

[0078] In Figure 1 In the example shown, the wavelength conversion member 10 has a rectangular shape when viewed from above. However, the wavelength conversion member 10 may also have other shapes such as a circular shape or a polygonal shape when viewed from above.

[0079] The wavelength conversion member 10 includes a phosphor. As the phosphor, yttrium-aluminum-garnet-based phosphors (e.g., (Y,Gd)3(Al,Ga)5O 12 :Ce), lutetium-aluminum-garnet-based phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium-aluminum-garnet-based phosphors (e.g., Tb3(Al,Ga)5O 12 :Ce), CCA-based phosphors (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphors (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate-based phosphors (e.g., Ca8MgSi4O 16 Cl2:Eu), silicate-based phosphors (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sialon-based phosphors (e.g., (Si,Al)3(O,N)4:Eu) or α-sialon-based phosphors (e.g., Ca(Si,Al) 12 (O,N) 16 :Eu) and other oxynitride-based phosphors, LSN-based phosphors (e.g., (La,Y)3Si6N 11:Ce), BSESN-based phosphors (e.g., (Ba,Sr)2Si5N8:Eu), SLA-based phosphors (e.g., SrLiAl3N4:Eu), CASN-based phosphors (e.g., CaAlSiN3:Eu), or SCASN-based phosphors (e.g., (Sr,Ca)AlSiN3:Eu), etc., nitride-based phosphors, KSF-based phosphors (e.g., K2SiF6:Mn), KSAF-based phosphors (e.g., K2(Si 1-x Al x )F 6-x :Mn, where x satisfies 0 < x < 1.), or MGF-based phosphors (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), etc., fluoride-based phosphors, quantum dots having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3, where FA and MA represent formamidine and methylamine, respectively), II-VI group quantum dots (e.g., CdSe), III-V group quantum dots (e.g., InP), or quantum dots having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2), etc.

[0080] For example, when the light from the light-emitting unit 21 is blue light and the phosphor is a yttrium-aluminum-garnet phosphor (hereinafter referred to as "YAG phosphor") that is excited by blue light and converted into yellow light, the blue light emitted from the light-emitting unit 21 and the yellow light after wavelength conversion by the YAG phosphor are mixed, and white light can be extracted from the light-emitting device 1.

[0081] The wavelength conversion member 10 may or may not include a light diffusing material. Examples of the light diffusing material include titanium oxide, barium titanate, aluminum oxide, silicon oxide, and yttrium aluminum perovskite (YAP).

[0082] <Light-emitting element 20>

[0083] Next, the structure of the light-emitting element 20 will be described. The light-emitting element 20 is a semiconductor light-emitting element such as an LED (Light Emitting Diode) or an LD (Laser Diode). In Figure 2 the example shown, the light-emitting element 20 has a light-transmissive member 30, a light-emitting unit 21 including a light-emitting layer 212, a first electrode 22, a first pad electrode 23, a second pad electrode 24, a second electrode 25, and an insulating layer 26. The first electrode 22, the first pad electrode 23, the second pad electrode 24, the second electrode 25, and the insulating layer 26 are disposed on the lower surface side of the light-emitting element 20 (i.e., the lower side of the light-emitting unit 21).

[0084] As Figure 1As shown, in a top view, the light-emitting portion 21 overlaps with the wavelength conversion member 10. Specifically, the light-emitting portion 21 is disposed on the first side surface 13a side of the lower surface 12 of the wavelength conversion member 10. That is, in the light-emitting device 1, in a top view, the center of the light-emitting portion 21 is located at a position closer to the +X direction of the wavelength conversion member 10 than the center of the wavelength conversion member 10.

[0085] Figure 1 The light-emitting portion 21 shown has a rectangular shape in a top view. However, the light-emitting portion 21 may have other shapes such as a square, a circle, or a polygon in a top view.

[0086] The light-emitting portion 21 includes a first semiconductor layer 211, a light-emitting layer 212, and a second semiconductor layer 213. The first semiconductor layer 211 is disposed on the lower surface side of the light-emitting layer 212. The second semiconductor layer 213 is disposed on the upper surface side of the light-emitting layer 212. That is, the light-emitting portion 21 has at least one laminate formed by sequentially disposing the second semiconductor layer 213, the light-emitting layer 212, and the first semiconductor layer 211 starting from the wavelength conversion member 10 side. The light-emitting layer 212 may be a single quantum well (SQW) structure or a multi-quantum well (MQW) structure including a plurality of well layers. The first semiconductor layer 211 is a p-side semiconductor layer. The second semiconductor layer 213 is an n-side semiconductor layer.

[0087] The first semiconductor layer 211, the light-emitting layer 212, and the second semiconductor layer 213 may each be a semiconductor layer made of a nitride semiconductor. The nitride semiconductor includes all semiconductors that can be formed by varying the composition ratios x and y in the chemical formula InxAlyGa1-x-yN (0≤x, 0≤y, x + y≤1) within their respective ranges. The emission peak wavelength of the light-emitting layer 212 can be appropriately selected according to the purpose. The light-emitting layer 212 is configured to emit visible light or ultraviolet light, for example.

[0088] In the case where the structure including the first semiconductor layer 211, the light-emitting layer 212, and the second semiconductor layer 213 is one laminate, the light-emitting portion 21 may include a plurality of laminates. In this case, for example, the plurality of laminates overlap in the Z-axis direction. The light-emitting portion 21 may include well layers having different emission peak wavelengths or well layers having the same emission peak wavelength in the light-emitting layers 212 included in the respective plurality of laminates. Here, the same emission peak wavelength also includes a case where the deviation is on the order of several nm.

[0089] The combination of the emission peak wavelengths of a plurality of laminate bodies can be appropriately selected. For example, when the light-emitting unit 21 includes two laminate bodies, examples of the combination of the light emitted from the light-emitting layers of the respective laminate bodies include combinations such as blue light and blue light, green light and green light, red light and red light, ultraviolet light and ultraviolet light, ultraviolet light and blue light, blue light and green light, blue light and red light, or green light and red light. For example, when the light-emitting unit 21 includes three laminate bodies, an example of the combination of the light emitted from the light-emitting layers of the respective laminate bodies is a combination of blue light, green light, and red light.

[0090] In Figure 2 In the example shown, in a plan view, the light-emitting unit 21 overlaps with the first upper surface 11a of the wavelength conversion member 10 and does not overlap with the second upper surface 11b. Therefore, the light-emitting device 1 can make the amount of light emitted from the first upper surface 11a greater than the amount of light emitted from the second upper surface 11b. Therefore, a light-emitting device having a luminance distribution in which a high-luminance region and a low-luminance region are included in the light-emitting surface can be obtained. When such a light-emitting device 1 is used as a vehicle headlamp, a high-luminance region can be arranged in a desired region of the irradiation region. Therefore, without using a complicated optical design such as a reflector or a lens, a desired light distribution can be easily obtained. As a result, miniaturization of the headlamp can be achieved, and the designability of the headlamp can be improved. In addition, on the light-emitting surface of the light-emitting device 1, in a plan view, the region corresponding to the first upper surface 11a of the wavelength conversion member 10 is a high-luminance region, and the region corresponding to the upper surface of the light adjustment member 40 is a low-luminance region. In addition, the average luminance of the low-luminance region is 20% or more and 80% or less of the average luminance of the high-luminance region.

[0091] The light-emitting unit 21 is not limited to a structure in which, in a plan view, it overlaps with the first upper surface 11a of the wavelength conversion member 10 and does not overlap with the second upper surface 11b. The light-emitting unit 21 may further include a light-emitting portion (hereinafter, sometimes referred to as a "first light-emitting portion") that overlaps with the first upper surface 11a of the wavelength conversion member 10 in a plan view and a light-emitting portion (hereinafter, sometimes referred to as a "second light-emitting portion") that overlaps with the second upper surface 11b of the wavelength conversion member 10. Each of the first light-emitting portion and the second light-emitting portion includes one or more light-emitting layers. When the light-emitting device 1 includes the first light-emitting portion and the second light-emitting portion as the light-emitting unit, it is preferable that the number of light-emitting layers included in the first light-emitting portion is greater than the number of light-emitting layers in the second light-emitting portion.

[0092] The first electrode 22 is electrically connected to the first semiconductor layer 211. The first electrode 22 is disposed on the lower surface of the first semiconductor layer 211. When the first semiconductor layer 211 is a p-side semiconductor layer, the first electrode 22 is a p-side electrode.

[0093] Examples of the material constituting the first electrode 22 include single-metal materials such as gold (Au), silver (Ag), aluminum (Al), nickel (Ni), rhodium (Rh), copper (Cu), titanium (Ti), platinum (Pt), palladium (Pd), molybdenum (Mo), chromium (Cr), tungsten (W), etc., or alloy materials containing these metals. In addition, the first electrode 22 may have a single-layer structure composed of a single metal layer, or a stacked structure in which a plurality of metal layers are stacked in the Z-axis direction.

[0094] As the material constituting the first electrode 22, a material with a high reflectivity such as Ag or Al is preferred. When the first electrode 22 is made of a material with a high reflectivity, for example, light emitted from the light-emitting layer 212 downward (i.e., the -Z side) can be reflected upward (i.e., the +Z side). That is, the light reaching the first electrode 22 can be reflected toward the wavelength conversion member 10. Therefore, the light extraction efficiency in the light-emitting device 1 can be improved. The "reflectivity" in this specification refers to the reflectivity at the emission peak wavelength of the light emitted from the light-emitting layer 212.

[0095] In addition, the first electrode 22 may be composed of a transparent conductive layer such as indium tin oxide (ITO). The first electrode 22 may have a single-layer structure composed only of a transparent conductive layer, or a stacked structure including a metal layer and a transparent conductive layer, which is combined with the above metal layer (for example, Ag or Al).

[0096] The second electrode 25 is electrically connected to the second semiconductor layer 213. As Figure 2 shown, the second electrode 25 penetrates the insulating layer 26 and the first electrode 22 and extends to the second semiconductor layer 213. In addition, although not shown, insulating layers are respectively disposed between the second electrode 25 and the light-emitting layer 212, between the second electrode 25 and the first semiconductor layer 211, and between the second electrode 25 and the first electrode 22. When the second semiconductor layer 213 is an n-side semiconductor layer, the second electrode 25 is an n-side electrode.

[0097] The material constituting the second electrode 25 may be the same metal material or alloy material as the first electrode 22, or a different metal material or alloy material from the first electrode 22. In addition, the second electrode 25 may have a single-layer structure composed of a single metal layer, or a stacked structure in which a plurality of metal layers are stacked in the Z-axis direction.

[0098] In Figure 2 the example shown, the first pad electrode 23 is disposed on the lower surface of the first electrode 22. In addition, the first pad electrode 23 penetrates the insulating layer 26 in the Z-axis direction and extends below the insulating layer 26 (i.e., the -Z side). The material constituting the first pad electrode 23 is, for example, the same material as the second electrode 25.

[0099] The second pad electrode 24 is disposed on the lower surface of the second electrode 25. Additionally, the second pad electrode 24 may also be bonded to the lower surface of the insulating layer 26. The material constituting the second pad electrode 24 is, for example, the same material as the first pad electrode 23.

[0100] In Figure 2 the example shown, the insulating layer 26 is disposed between the first electrode 22 and the second pad electrode 24. By interposing the insulating layer 26 between the first electrode 22 and the second pad electrode 24, the short circuit between the first electrode 22 and the second pad electrode 24 can be reduced.

[0101] The light-transmissive member 30 is a member for supporting the light-emitting portion 21. The light-transmissive member 30 is disposed between the wavelength conversion member 10 and the light-emitting portion 21. Here, "light-transmissive" means, for example, that the transmittance of the light emitted from the light-emitting layer 212 is 80% or more. Examples of the material constituting the light-transmissive member 30 include insulating materials such as sapphire, spinel, and glass, and semiconductor materials such as aluminum nitride and silicon carbide.

[0102] As Figure 2 shown, the light-transmissive member 30 can be disposed in a plan view so as to extend to a position overlapping with the light adjustment member 40. That is, the light-transmissive member 30 can overlap with the first upper surface 11a and the second upper surface 11b of the wavelength conversion member 10 in a plan view. By disposing the light-transmissive member 30 in a plan view so as to extend to a position overlapping with the light adjustment member 40, the light emitted from the light-emitting layer 212 can be propagated to the second side surface 13b side of the wavelength conversion member 10. Additionally, the light-transmissive member 30 is not limited to overlapping with the light adjustment member 40 in a plan view, and may not overlap with the light adjustment member 40. That is, the light-transmissive member 30 is not limited to overlapping with the first upper surface 11a and the second upper surface 11b of the wavelength conversion member 10 in a plan view, and the light-transmissive member 30 may overlap only with the first upper surface 11a of the wavelength conversion member 10 in a plan view.

[0103] The light-transmissive member 30 includes an upper surface, a lower surface, and one or more side surfaces connecting between the outer edges of the upper surface and the lower surface. In Figure 2 the example shown, in the X-axis direction, the position of the -X side surface of the light-transmissive member 30 coincides with the position of the -X side surface of the wavelength conversion member 10. Further, in the X-axis direction, the position of the +X side surface of the light-transmissive member 30 coincides with the position of the +X side surface of the wavelength conversion member 10.

[0104] In Figure 1 the example shown, the light-transmissive member 30 has a rectangular shape in a plan view. However, the light-transmissive member 30 may also have other shapes such as a circular shape or a polygonal shape in a plan view.

[0105] The upper surface of the light-transmissive member 30 and the lower surface of the wavelength conversion member 10 can be directly joined, or can be joined through other members such as a light-transmissive adhesive member.

[0106] <Light adjustment member 40>

[0107] Hereinafter, the structure of the light adjustment member 40 will be described. The light adjustment member 40 is a member for adjusting optical characteristics such as the amount and / or chromaticity of light emitted from the low-luminance region of the light-emitting device 1. The light adjustment member 40 is disposed on the second side surface 13b side of the upper surface 11 of the wavelength conversion member 10. In Figure 2 the example shown, the light adjustment member 40 does not overlap with the light-emitting portion 21 in a plan view. In the light-emitting device 1, in a plan view, the center of the light adjustment member 40 is located at a position closer to the -X direction of the wavelength conversion member 10 than the center of the wavelength conversion member 10.

[0108] In Figure 2 the example shown, the light adjustment member 40 is disposed on the second upper surface 11b of the wavelength conversion member 10. In this case, in the Z-axis direction, the position of the upper surface of the light adjustment member 40 is preferably the same as the position of the first upper surface 11a of the wavelength conversion member 10. Thereby, miniaturization of the light-emitting device 1 can be achieved. In addition, it is easy to align with a lens disposed above the light-emitting device 1. And, in the Z-axis direction, the position of the upper surface of the light adjustment member 40 can also be at a position more below (i.e., on the -Z-axis direction side) than the position of the first upper surface 11a of the wavelength conversion member 10.

[0109] The light adjustment member 40 has an upper surface, a lower surface located on the opposite side of the upper surface, and a plurality of side surfaces disposed between the upper surface and the lower surface. In Figure 1 and Figure 2 the example shown, the wavelength conversion member 10 is disposed on one of the plurality of side surfaces of the light adjustment member 40, and the wavelength conversion member 10 is not disposed on the remaining side surfaces of the light adjustment member 40. That is, on the side surface of the light adjustment member 40 that faces the inner wall surface 14 of the wavelength conversion member 10, the wavelength conversion member 10 is covered. And, on the surfaces other than the side surface of the light adjustment member 40 that faces the inner wall surface 14 of the wavelength conversion member 10, the wavelength conversion member 10 is not covered. Hereinafter, the "surface other than the side surface of the light adjustment member 40 that faces the inner wall surface 14 of the wavelength conversion member 10" may also be referred to as the outer side surface of the light adjustment member 40.

[0110] The light adjustment member 40 transmits a part of the light that reaches from the light-emitting layer 212 of the light-emitting unit 21 and reflects the other part of the light. As an example of the light adjustment member 40, a resin containing particles of a light-reflective substance can be cited. As the resin, one or more resins or a mixed resin containing silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, acrylic resin, phenolic resin, bismaleimide triazine resin, polyphthalamide resin can be cited. Among them, a resin containing silicone resin having excellent heat resistance, electrical insulation, and flexibility as a base material is preferred. As the light-reflective substance, titanium oxide, silicon oxide, zirconium oxide, magnesium oxide, calcium carbonate, calcium hydroxide, calcium silicate, zinc oxide, barium titanate, potassium titanate, aluminum oxide, aluminum nitride, boron nitride, mullite, and a combination thereof can be cited. Among them, titanium oxide is preferred because it is relatively stable against moisture and has a high refractive index. As another example of the light adjustment member 40, a sintered body containing a base member made of an inorganic material and particles of a light-reflective substance contained in the base member can be cited. The base member can be made of, for example, alumina, yttrium oxide, zirconium oxide, magnesium oxide, or silicon oxide. The particles of the light-reflective substance can use the materials described above. In addition, as another example of the light adjustment member 40, an inorganic member containing a mixture of boron nitride, silicon oxide, and potassium hydroxide can be cited.

[0111] The concentration of the light-reflective substance of the light adjustment member 40 is preferably, for example, 60% by mass or more and 70% by mass or less. The concentration of the light-reflective substance represents the proportion of the light-reflective substance in the light adjustment member 40. The reflectance of the light adjustment member 40 is preferably, for example, 1% or more and 95% or less.

[0112] The light adjustment member 40 may or may not contain a phosphor. The phosphor contained in the light adjustment member 40 may be the same as or different from the phosphor contained in the wavelength conversion member 10. By the light adjustment member 40 containing a phosphor, the difference between the chromaticity of the light emitted from the first upper surface 11a of the wavelength conversion member 10 and the chromaticity of the light emitted from the upper surface of the light adjustment member 40 can be reduced.

[0113] <Light reflection film 50>

[0114] Hereinafter, the structure of the light reflection film 50 will be described. The light reflection film 50 is disposed on the lower surface of the light-transmissive member 30. More specifically, the light reflection film 50 is disposed in the region where the light-transmissive member 30 and the light adjustment member 40 overlap in a plan view on the lower surface of the light-transmissive member 30. That is, the light reflection film 50 overlaps the second upper surface 11b of the wavelength conversion member 10 in a plan view. In addition, the light reflection film 50 is disposed at a position separated from the light-emitting unit 21 on the lower surface of the light-transmissive member 30.

[0115] As an example of the light reflection film 50, a metal film with a high reflectivity such as Ag or Al, and an optical thin film such as DBR can be cited.

[0116] By disposing the light reflection film 50 in a region that overlaps with the light adjustment member 40 in a plan view, the light reaching the light reflection film 50 can be reflected toward the light adjustment member 40. Thereby, the light extraction efficiency of the light-emitting device 1 can be improved.

[0117] <Cover member 60>

[0118] Hereinafter, the structure of the cover member 60 will be described. The cover member 60 preferably has light-shielding properties, and more preferably has light-reflecting properties. When the cover member 60 has light-reflecting properties, as an example of the substance constituting the cover member 60, a resin containing particles of a light-reflecting substance can be cited. The resin contained in the cover member 60 may be the same as or different from the resin included in the light adjustment member 40. The cover member 60, for example, preferably has a reflectivity of 60% or more at the emission peak wavelength of the light emitted from the light-emitting layer 212, and more preferably has a reflectivity of 90% or more. The reflectivity of the cover member 60 can further improve the reflectivity of the light adjustment member 40.

[0119] The cover member 60 is, for example, a white resin containing titanium oxide and silicone resin. The cover member 60 is not limited to a white resin, and may also be an inorganic member containing a mixture of boron nitride, silicon oxide, and potassium hydroxide. In addition, the cover member 60 may also be an inorganic member containing a paste-like sintered body and silicon oxide or aluminum oxide formed on the surface or in the gaps of the sintered body, and the paste-like sintered body contains titanium oxide, aluminum oxide, and an acrylic resin.

[0120] As Figure 2 shown, the cover member 60 covers the first side surface 13a and the second side surface 13b of the wavelength conversion member 10. In addition, the cover member 60 exposes the upper surface 11 of the wavelength conversion member 10. In Figure 2 the example shown, the cover member 60 exposes the first upper surface 11a of the wavelength conversion member 10. In addition, the cover member 60 exposes the upper surface of the light adjustment member 40.

[0121] By covering the first side surface 13a and the second side surface 13b of the wavelength conversion member 10 with the cover member 60, the light reaching the first side surface 13a and the second side surface 13b can be reflected toward the upper surface 11 of the wavelength conversion member 10. Thereby, the light extraction efficiency of the light-emitting device 1 can be improved.

[0122] The cover member 60 preferably covers the region 30N of the lower surface of the light-transmissive member 30 that does not overlap with the light reflection film 50 in a plan view. Therefore, the light reaching the region 30N of the lower surface of the light-transmissive member 30 can be reflected toward the second upper surface 11b of the wavelength conversion member 10.

[0123] The covering member 60 preferably covers the outer surface of the light adjustment member 40. Accordingly, light reaching the outer surface of the light adjustment member 40 can be reflected toward the second upper surface 11b of the wavelength conversion member 10. Therefore, the light extraction efficiency of the light-emitting device 1 can be further improved.

[0124] <Wiring substrate 70>

[0125] Hereinafter, the structure of the wiring substrate 70 will be described. The wiring substrate 70 is disposed below (i.e., on the -Z side) the light-emitting portion 21 and the light reflection film 50. In Figure 2 the example shown, the wiring substrate 70 has a rectangular shape in plan view. However, the wiring substrate 70 may have other shapes such as a circular shape or a polygonal shape in plan view.

[0126] As Figure 2 shown, the wiring substrate 70 includes a base material 71, a first metal layer 72, and a second metal layer 73. The base material 71 is the base material of the wiring substrate 70. The base material 71 has a rectangular shape in plan view. In addition, the base material 71 may have other shapes such as a circular shape or a polygonal shape in plan view. The base material 71 is preferably made of a ceramic having excellent heat dissipation properties such as aluminum nitride, aluminum oxide, silicon carbide, or silicon nitride, or a resin having excellent heat dissipation properties such as glass epoxy resin.

[0127] The first metal layer 72 is disposed on the upper surface of the base material 71. In Figure 2 the example shown, the first metal layer 72 includes two metal layers arranged along the X-axis direction and separated from each other. The first metal layer 72 is not limited to including two metal layers and may be one metal layer. In addition, the number of metal layers included in the first metal layer 72 may or may not be the same as the number of the bonding members 81 described later. The first metal layer 72 may have a single-layer structure composed of a single metal layer or a laminated structure in which a plurality of metal layers are laminated in the Z-axis direction. In addition, the upper surface of the base material 71 is an example of the upper surface of the wiring substrate 70.

[0128] As Figure 2 shown, each first metal layer 72 is respectively bonded to the lower surface of a plurality of bonding members 81. The first metal layer 72 functions as a bonding layer for improving the bonding property between the bonding member 81 and the base material 71. In addition, the first metal layer 72 can release heat generated in the wavelength conversion member 10 and / or the light-emitting portion 21 and transmitted to the bonding member 81 to the base material 71 side.

[0129] Examples of the material constituting the first metal layer 72 include single metal materials such as Au, Ag, Al, Ni, Rh, Cu, Ti, Pt, Pd, Mo, Cr, W, or alloy materials including these metals.

[0130] The second metal layer 73 is disposed at a position on the upper surface of the base material 71, separated from the first metal layer 72. Figure 2 The shown second metal layer 73 includes two metal layers 73a and 73b arranged along the X-axis direction and separated from each other. The second metal layer 73a is electrically connected to the first semiconductor layer 211 through the bonding member 82a, the first pad electrode 23, and the first electrode 22. The second metal layer 73b is electrically connected to the second semiconductor layer 213 through the bonding member 82b, the second pad electrode 24, and the second electrode 25.

[0131] The second metal layer 73 is electrically connected to an external power source. The current from the external power source is supplied to the light-emitting unit 21 through the second metal layer 73. The light-emitting unit 21 performs a light-emitting operation using the current supplied through the second metal layer 73. The material constituting the second metal layer 73 may be the same as or different from the material constituting the first metal layer 72. In addition, the second metal layer 73 may have a single-layer structure composed of a single metal layer, or may have a stacked structure in which a plurality of metal layers are stacked in the Z-axis direction.

[0132] The wiring substrate 70 may or may not have a metal layer electrically connected to the first metal layer 72 on the lower surface of the base material 71. Similarly, the wiring substrate 70 may or may not have a metal layer electrically connected to the second metal layer 73 on the lower surface of the base material 71.

[0133] <Bonding members 81, 82>

[0134] The bonding member 81 connects the first metal layer 72 and the light reflection film 50. Therefore, the possibility that the wavelength conversion member 10 is inclined with respect to the wiring substrate 70 can be reduced. The bonding member 81 is preferably made of a material with high heat dissipation efficiency. By using the bonding member 81 to connect the first metal layer 72 and the light reflection film 50, the heat dissipation efficiency of the light-emitting device 1 can be improved. Here, the bonding member 81 is an example of the "first bonding member". The bonding member 81 is not limited to being connected to both the first metal layer 72 and the light reflection film 50, and may not be connected to either the first metal layer 72 or the light reflection film 50.

[0135] Figure 2 Two bonding members 81 are shown. The two bonding members 81 are respectively bonded to the two first metal layers 72. However, the number of bonding members 81 bonded to the first metal layer 72 is not limited to two, and may be one or three or more.

[0136] The joining member 81 includes at least one of a single metal material and an alloy material, for example. The metal material or alloy material constituting the joining member 81 may be the same as or different from the metal material or alloy material constituting the first metal layer 72. When the joining member 81 and the first metal layer 72 are made of the same material, the joinability between the joining member 81 and the first metal layer 72 can be improved. The joining member 81 may also be made of other substances such as ceramics with high heat dissipation efficiency.

[0137] The joining member 81 can be joined to the light reflecting film 50 through the adhesive layer 85. The adhesive layer 85 is made of a substance with high heat dissipation efficiency such as a metal material or an alloy material, for example. By disposing the adhesive layer 85 between the joining member 81 and the light reflecting film 50, the joinability between the joining member 81 and the light reflecting film 50 can be improved. However, the upper surface of the joining member 81 and the lower surface of the light reflecting film 50 may also be directly joined. The adhesive layer 85 may be made of a conductive substance or a non-conductive substance in the case of the first embodiment. The adhesive layer 85 is made of a conductive substance in the case of the second embodiment described later.

[0138] The joining member 82 electrically connects the second metal layer 73 and the light emitting portion 21. Figure 2 Two joining members 82a and 82b are shown. The joining member 82a electrically connects the second metal layer 73a and the first semiconductor layer 211 through the first pad electrode 23 and the first electrode 22. The joining member 82b electrically connects the second metal layer 73b and the second semiconductor layer 213 through the second pad electrode 24 and the second electrode 25.

[0139] The joining member 82 includes at least one of a metal material and an alloy material. By using the joining member 82 to connect the second metal layer 73 of the wiring substrate 70 and the light emitting portion 21, the conductivity of the current path including the second metal layer 73 and the light emitting portion 21 can be ensured.

[0140] <An example of the operation>

[0141] Hereinafter, with reference to Figure 3 an example of the operation of the light emitting device 1 of the first embodiment will be described. Figure 3 is a schematic cross-sectional view for explaining an example of the operation of the light emitting device 1 of the first embodiment.

[0142] As Figure 3 shown, light L1 emitted from the light emitting layer 212, for example, in the upward direction (i.e., the +Z side), and light L2 with respect to the light emitting layer 212, for example, in the obliquely upward region toward the -X side are emitted. After the light L1 penetrates the inside of the light transmissive member 30 and the wavelength conversion member 10, it is taken out from the first upper surface 11a of the wavelength conversion member 10.

[0143] The light L2, for example, reaches the lower surface of the light adjustment member 40. Here, a part of the light L21 in the light L2 that reaches the lower surface of the light adjustment member 40 is incident on the light adjustment member 40 and is taken out from the upper surface of the light adjustment member 40.

[0144] The light such as the light L21 taken out from the upper surface of the light adjustment member 40 corresponds to the light in the region facing the side (for example, the -X side) with respect to the light-emitting layer 212. Since there is no light-emitting layer below the light adjustment member 40 (that is, the region overlapping with the second upper surface 11b of the wavelength conversion member 10 in plan view), the amount of light taken out from the upper surface of the light adjustment member 40 is less than the amount of light L1 taken out from the upper surface 11a of the wavelength conversion member 10 upward from the light-emitting layer 212. In other words, the brightness of the first upper surface 11a of the wavelength conversion member 10 is higher than the brightness of the upper surface of the light adjustment member 40. Thus, it is possible to make the brightnesses of the first upper surface 11a of the wavelength conversion member 10 and the upper surface of the light adjustment member 40, which are the light-emitting surfaces of the light-emitting device 1, different. That is, on the light-emitting surface of the light-emitting device 1, a brightness distribution including a high-brightness region and a low-brightness region can be obtained.

[0145] Next, another part of the light L22 in the light L2 that reaches the lower surface of the light adjustment member 40 is reflected by the lower surface of the light adjustment member 40, for example. The light L22 reflected by the lower surface of the light adjustment member 40 reaches the lower surface 12 of the wavelength conversion member 10. A part of the light L23 in the light L22 that reaches the lower surface 12 of the wavelength conversion member 10 is reflected by the lower surface 12 of the wavelength conversion member 10 and heads again toward the lower surface of the light adjustment member 40. In addition, the light L23 is incident on the light adjustment member 40 and is taken out from the upper surface of the light adjustment member 40.

[0146] In the region of the wavelength conversion member 10 below the light adjustment member 40, like the light L22 and the light L23, by traveling back and forth between the lower surface of the light adjustment member 40 and the lower surface 12 of the wavelength conversion member 10, the optical path length of the light traveling in the wavelength conversion member 10 becomes longer compared to the case where the light adjustment member 40 is not provided. On the other hand, as Figure 2 and Figure 3As shown, the thickness between the second upper surface 11b and the lower surface 12 of the wavelength conversion member 10 is smaller than the thickness between the first upper surface 11a and the lower surface 12. Therefore, in the region below the light adjustment member 40 in the wavelength conversion member 10, the frequency of light traveling in the wavelength conversion member 10 being excited within the wavelength conversion member 10 can be reduced. As a result, in the region below the light adjustment member 40 in the wavelength conversion member 10, by adjusting the thickness between the second upper surface 11b and the lower surface 12 of the wavelength conversion member 10, the chromaticity of the light taken out from the upper surface of the light adjustment member 40 can be adjusted. Therefore, the difference in chromaticity between the light taken out from the upper surface of the light adjustment member 40 and the light taken out from the first upper surface 11a of the wavelength conversion member 10 can be reduced.

[0147] In addition, another part of the light L24 in the light L22 reaching the lower surface 12 of the wavelength conversion member 10 is incident on the light transmissive member 30. Then, the light L24 is reflected by the light reflecting film 50. And the light L24 reflected by the light reflecting film 50 passes through the inside of the light transmissive member 30 and the wavelength conversion member 10 and reaches the lower surface of the light adjustment member 40. In addition, the light L24 is incident on the light adjustment member 40 and taken out from the upper surface of the light adjustment member 40. Therefore, the light extraction efficiency of the light emitting device 1 can be further improved.

[0148] In addition, in Figure 3 and the following Figure 14 , as the arrow indicating the traveling direction of light, the change in the traveling direction of light due to the refractive index difference between components may sometimes be omitted.

[0149] <Manufacturing method>

[0150] Hereinafter, with reference to Figures 4 to 10 , an example of the manufacturing method of the light emitting device 1 of the first embodiment will be described. Figures 4 to 10 is a cross-sectional view schematically showing the manufacturing method of the light emitting device of the first embodiment.

[0151] The manufacturing method of the light emitting device 1 of the first embodiment includes: a step of preparing a first intermediate 110M including a light emitting portion 21, a light transmissive member 30, and a light reflecting film 50; a step of preparing a second intermediate 120M including a wavelength conversion member 10 and a light adjustment member 40; a step of disposing the first intermediate 110M on a wiring substrate 70; a step of disposing the second intermediate 120M above the first intermediate 110M; and a step of forming a covering member 60.

[0152] <Step of preparing the first intermediate 110M>

[0153] The step of preparing the first intermediate 110M will be described. As Figure 4As shown, a light-emitting portion 21 including a first semiconductor layer 211, a light-emitting layer 212, and a second semiconductor layer 213 is formed on a light-transmissive member 30. Next, a part of the region 21S of the light-emitting portion 21 is removed by a removal method such as etching. In addition, a hole for disposing a second electrode 25 is formed on the light-emitting portion 21 by a removal method such as etching.

[0154] Next, as Figure 5 shown, a first electrode 22, a first pad electrode 23, a second pad electrode 24, a second electrode 25, and an insulating layer 26 are respectively formed on the light-emitting portion 21 by a film-forming method such as sputtering. In addition, a light reflection film 50 is formed at a position separated from the light-emitting portion 21 on the light-transmissive member 30 by a film-forming method such as sputtering. Next, an adhesive layer 85 is formed on the light reflection film 50. In this way, a first intermediate 110M is prepared.

[0155] <Process of preparing a second intermediate 120M>

[0156] Next, the process of preparing the second intermediate 120M will be described. The process of preparing the second intermediate 120M can be performed before or after preparing the first intermediate 110M.

[0157] As Figure 6 shown, a groove 10T is formed in the central region of the wavelength conversion member 10 by etching or a blade. Next, an optical adjustment member 40 is disposed in the groove 10T. Thus, a plate-like member in which the wavelength conversion member 10 and the optical adjustment member 40 are integrated is obtained. As a method of disposing the optical adjustment member 40, for example, methods well known in the art such as printing, grouting, compression molding using a mold, and transfer molding can be adopted.

[0158] Next, by a cutting method such as slicing, the plate-like member is cut at a predetermined position (for example, Figure 6 the position indicated by the dashed line in Figure 7 shown), and is singulated to obtain the second intermediate 120M. In this way, the second intermediate 120M is prepared.

[0159] <Process of disposing the first intermediate 110M on a wiring substrate 70>

[0160] Next, the process of disposing the first intermediate 110M on the wiring substrate 70 will be described. As Figure 8 shown, bonding members 81, 82 (82a, 82b) are disposed on the wiring substrate 70. At this time, the bonding member 81 is bonded to the first metal layer 72 of the wiring substrate 70. In addition, the bonding member 82a is bonded to the second metal layer 73a of the wiring substrate 70. In addition, the bonding member 82b is bonded to the second metal layer 73b of the wiring substrate 70.

[0161] Further, using any conveying element, the first intermediate 110M is conveyed above the wiring substrate 70 and the bonding members 81, 82. Then, the bonding member 81 is bonded to the light reflecting film 50 through the adhesive layer 85. The bonding member 82 is bonded to the light emitting portion 21. Thus, the first intermediate 110M is disposed above the members including the wiring substrate 70.

[0162] <Process of disposing the second intermediate 120M above the first intermediate 110M>

[0163] Next, the process of disposing the second intermediate 120M above the first intermediate 110M will be described. Using any conveying element, the second intermediate 120M is conveyed above the light transmissive member 30. Then, as Figure 9 shown, the lower surface 12 of the wavelength conversion member 10 is bonded to the upper surface of the light transmissive member 30. Thus, the second intermediate 120M is disposed above the first intermediate 110M. The wavelength conversion member 10 may be directly bonded to the light transmissive member 30, or may be bonded through an adhesive member (e.g., a light transmissive resin). In the case where the wavelength conversion member 10 is directly bonded to the light transmissive member 30, for example, a direct bonding method such as crimping, sintering, surface activated bonding, atomic diffusion bonding, or hydroxyl bonding can be employed.

[0164] <Process of forming the covering member 60>

[0165] Next, the process of forming the covering member 60 will be described. As Figure 10 shown, the covering member 60 is coated so as to cover the first side surface 13a and the second side surface 13b of the wavelength conversion member 10, the region 30N of the light transmissive member 30, and the outer side surface of the light adjustment member 40, respectively. Then, the covering member 60 is hardened by heat treatment. Thus, the covering member 60 is formed. Further, in the case where the first upper surface 11a of the wavelength conversion member 10 and the upper surface of the light adjustment member 40 are covered by the covering member 60 coated thereon, the upper end portion of the covering member 60 is polished or ground so that the first upper surface 11a of the wavelength conversion member 10 and the upper surface of the light adjustment member 40 are exposed.

[0166] Through the above processes, the light emitting device 1 is manufactured. Further, in the preparation with reference to Figure 5In the process of the first intermediate 110M of the description, while joining the joining member 81 to the adhesive layer 85, the joining member 82 can be joined to the first pad electrode 23 and the second pad electrode 24. In addition, before the process of arranging the first intermediate 110M on the wiring substrate 70, the second intermediate 120M can be arranged on the first intermediate 110M. In addition, at least one of the above-mentioned first intermediate 110M, second intermediate 120M, covering member 60, and wiring substrate 70 can be prepared by purchasing.

[0167] [Modification of the First Embodiment]

[0168] Hereinafter, with reference to Figure 11 and Figure 12 a modification of the light-emitting device of the first embodiment will be described. Figure 11 FIG. is a cross-sectional view schematically showing the light-emitting device 1A of the modification of the first embodiment. Figure 12 FIG. is a cross-sectional view schematically showing the light-emitting device 1B of another modification of the first embodiment. In addition, in the modification of the first embodiment, the same reference numerals are given to the constituent members that are the same as those in the first embodiment, and the description will be appropriately omitted.

[0169] The structural example of the light-emitting device 1A of the modification will be described. As Figure 11 shown, the light-emitting device 1A further includes a light-transmitting plate 18 arranged on the first upper surface 11a of the wavelength conversion member 10 and the upper surface of the light adjustment member 40. The light-transmitting plate 18 can protect the wavelength conversion member 10 and the light adjustment member 40.

[0170] The light-transmitting plate 18 can be made of insulating materials such as sapphire, spinel, and glass, semiconductor materials such as aluminum nitride and silicon carbide, etc. Among them, glass with high light transmittance and low cost is preferably used. In addition, by using glass as the material constituting the light-transmitting plate 18, light deterioration can be reduced while ensuring mechanical strength. As an example of glass, borosilicate glass and quartz glass can be cited.

[0171] Hereinafter, the structural example of the light-emitting device 1B of another modification will be described. As Figure 12 shown, the light-emitting device 1B has a plurality of light reflection films 50B respectively joined to the plurality of joining members 81. The plurality of light reflection films 50B are respectively arranged separately from each other. Therefore, the covering member 60 can be arranged between adjacent light reflection films 50B. If a substance with a higher reflectivity than the light reflection film 50B, such as white resin, is used as the covering member 60, the light reaching the light reflection film 50B and the covering member 60 can be more effectively reflected toward the light adjustment member 40. Thereby, the light extraction efficiency of the light-emitting device 1B can be further improved.

[0172] [Second Embodiment]

[0173] <Example of the overall structure of the light-emitting device 2>

[0174] Hereinafter, with reference to Figure 13 an example of the structure of the light-emitting device 2 according to the second embodiment will be described. Figure 13 is a cross-sectional view schematically showing an example of the overall structure of the light-emitting device according to the second embodiment. In Figure 13 the example shown, the light-emitting device 2 includes a wavelength conversion member 10, a light-emitting element 20C having a light-emitting portion 21C and a light-transmissive member 30, and a light adjustment member 40. However, the light-emitting element 20C may not include the light-transmissive member 30. In the case where the light-emitting element 20C does not include the light-transmissive member 30, the light-emitting device 2 includes a wavelength conversion member 10, a light-emitting portion 21C, and a light adjustment member 40. The light-emitting device 2 may further include a light reflection film 50C, a covering member 60, a wiring substrate 70, and bonding members 83, 84. In addition, in the second embodiment, the same reference numerals are given to the structural components that are the same as those in the first embodiment and the modified example of the first embodiment (hereinafter, the first embodiment and the modified example of the first embodiment are collectively referred to as "the first embodiment etc."), and the description is appropriately omitted.

[0175] The light-emitting portion 21C of the light-emitting device 2 includes a second semiconductor layer C, and the second semiconductor layer 213C is arranged to extend into the region between the light-transmissive member 30 and the light reflection film 50C. That is, in a plan view, the second semiconductor layer 213C overlaps the first upper surface 11a and the second upper surface 11b of the wavelength conversion member 10, respectively.

[0176] The light reflection film 50C is bonded to the second semiconductor layer 213C. The light reflection film 50C has conductivity. In addition, the light-emitting device 2 includes bonding members 83, 84. The bonding member 83 electrically connects the first metal layer 72c disposed on the upper surface of the wiring substrate 70 and the light reflection film 50C. In Figure 13 the example shown, a conductive adhesive layer 85 is disposed between the bonding member 83 and the light reflection film 50C. The bonding member 84 electrically connects the second metal layer 73c disposed on the upper surface of the wiring substrate 70 and the first semiconductor layer 211. A pad electrode 27 and a first electrode 22 are disposed between the bonding member 84 and the first semiconductor layer 211. In addition, the bonding member 83 is an example of the "first bonding member". The bonding member 84 is an example of the "second bonding member".

[0177] The first metal layer 72c, the bonding member 83, the light reflecting film 50C, the second semiconductor layer 213C, the light emitting layer 212, the first semiconductor layer 211, and the second metal layer 73c are electrically connected respectively. For example, the current from an external power source is supplied to the light emitting part 21C through the second metal layer 73c. The current supplied to the light emitting part 21C flows in the -X direction in the second semiconductor layer 213C of the light emitting part 21C, and then flows in the order of the light reflecting film 50C, the adhesive layer 85, the bonding member 83, and the first metal layer 72c. With this structure, the current supplied to the light emitting layer 212 from the second metal layer 73c can be more easily supplied to the entire light emitting layer 212 as viewed from above, thereby improving the light emitting efficiency of the light emitting layer 212.

[0178] <An example of the operation>

[0179] Hereinafter, with reference to Figure 14 an example of the operation of the light emitting device 2 of the second embodiment will be described. Figure 14 is a schematic cross-sectional view for explaining an example of the operation of the light emitting device 2 of the second embodiment.

[0180] As Figure 14 shown, the light L31 emitted from the light emitting layer 212 and directed toward an obliquely upper region, for example, on the -X side relative to the light emitting layer 212, reaches the lower surface of the light transmissive member 30. At this time, a part of the light L31, the light L32, enters the light transmissive member 30. Then, the light L32 transmits through the inside of the light transmissive member 30 and the light adjusting member 40, and is extracted from the upper surface of the light adjusting member 40.

[0181] In contrast, another part of the light L31, the light L33, is reflected at the lower surface of the light transmissive member 30 and directed toward the upper surface of the light reflecting film 50C. Further, the light L33 is reflected at the upper surface of the light reflecting film 50C and reaches the lower surface of the light transmissive member 30 again. At this time, a part of the light L33, the light L34, enters the light transmissive member 30. Then, the light L34 transmits through the inside of the light transmissive member 30 and the light adjusting member 40, and is extracted from the upper surface of the light adjusting member 40. In contrast, another part of the light L33 that reaches the lower surface of the light transmissive member 30, the light L35, is reflected at the lower surface of the light transmissive member 30 and directed toward the upper surface of the light reflecting film 50C.

[0182] According to the second embodiment, the light emitted from the light emitting layer 212 and directed toward a lateral region such as the -X side relative to the light emitting layer 212 can be extracted from the upper surface of the light adjusting member 40 through the second semiconductor layer 213C configured to extend to the region between the light transmissive member 30 and the light reflecting film 50C. Thereby, the light extraction efficiency of the light emitting device 2 can be improved.

[0183] [Third Embodiment]

[0184] <Example of the overall structure of the light-emitting device 3>

[0185] Hereinafter, with reference to Figure 15 an example of the structure of the light-emitting device 3 according to the third embodiment will be described. Figure 15 is a cross-sectional view schematically showing an example of the overall structure of the light-emitting device 3 according to the third embodiment. In Figure 15 the example shown, the light-emitting device 3 includes a wavelength conversion member 10, a light-emitting element 20D having a light-emitting portion 21 and a light-transmissive member 30D, a light adjustment member 40, and a covering member 60D. In addition, in the third embodiment, the same reference numerals are given to the structural members that are the same as those in the first embodiment and the second embodiment, and the description thereof is appropriately omitted.

[0186] Similar to the first embodiment and the second embodiment, the light-transmissive member 30D is disposed between the wavelength conversion member 10 and the light-emitting portion 21. However, different from the first embodiment and the second embodiment, the light-transmissive member 30D does not overlap with the light adjustment member 40 in a plan view. That is, the light-transmissive member 30D does not overlap with the low-luminance region of the light-emitting surface of the light-emitting device 3 in a plan view.

[0187] The covering member 60D covers the first side surface 13a and the second side surface 13b of the wavelength conversion member 10. In addition, the covering member 60D has light reflectivity. The covering member 60D covers the region of the lower surface 12 of the wavelength conversion member 10 that does not overlap with the light-emitting portion 21 in a plan view. That is, the covering member 60D covers the lower surface 12 of the wavelength conversion member 10 that overlaps with the light adjustment member 40 in a plan view. As the covering member 60D, a resin containing particles of a light-reflective substance can be used. Examples of the light-reflective substance and the resin can be the light-reflective substance and the resin listed in the covering member 60 provided in the first embodiment.

[0188] According to the third embodiment, the light that is emitted from the light-emitting layer 212 of the light-emitting portion 21 located in the high-luminance region obliquely upward toward the -X side and reaches the side surface of the light-transmissive member 30D is reflected by the covering member 60D. Therefore, the light taken out to the outside from the low-luminance region side can be reduced, and the light taken out to the outside from the high-luminance region side can be increased. The difference in the brightness of the light emitted from the first upper surface 11a of the wavelength conversion member 10 corresponding to the high-luminance region of the light-emitting device 3 and the light emitted from the upper surface of the light adjustment member 40 corresponding to the low-luminance region of the light-emitting device 3 can be increased. In addition, a sharp change in brightness can be caused near the boundary (i.e., the inner wall surface 14) between the first upper surface 11a of the wavelength conversion member 10 and the upper surface of the light adjustment member 40.

[0189] [Modification example of the third embodiment]

[0190] Hereinafter, with reference toFigure 16 To illustrate a modified example of the light-emitting device 3 of the third embodiment. Figure 16 It is a cross-sectional view schematically showing the light-emitting device 3A which is a modified example of the third embodiment. In addition, in the modified example of the third embodiment, the same reference numerals are assigned to the structural components identical to those in the first embodiment, the second embodiment, and the third embodiment, and the description is appropriately omitted.

[0191] In the light-emitting device 3A of the modified example, the light-emitting element 20E includes a light-transmissive member 30E. As Figure 16 shown, the main difference from the third embodiment is that the light-transmissive member 30E overlaps with a part of the light adjustment member 40 in a plan view. Specifically, the side surface on the -X side of the light-transmissive member 30E is located on the -X side of the inner wall surface 14 of the wavelength conversion member 10 and on the +X side of the second side surface 13b of the wavelength conversion member 10.

[0192] By causing the light-transmissive member 30E to overlap with a part of the light adjustment member 40 in a plan view, compared with the third embodiment, it is possible to make the brightness change near the boundary between the first upper surface 11a of the wavelength conversion member 10 and the upper surface of the light adjustment member 40 gentle.

[0193] [Fourth Embodiment]

[0194] [Example of the overall structure of the light-emitting device 4]

[0195] Hereinafter, with reference to Figure 17 to illustrate an example of the structure of the light-emitting device 4 of the fourth embodiment. Figure 17 It is a cross-sectional view schematically showing an example of the overall structure of the light-emitting device 4 of the fourth embodiment. In Figure 17 the example shown, the light-emitting device 4 includes a wavelength conversion member 10, a light-emitting element 20D having a light-emitting portion 21 and a light-transmissive member 30D, a light adjustment member 40, a covering member 60F, a wiring substrate 70, and a support 90. In addition, in the fourth embodiment, the same reference numerals are assigned to the structural components identical to those in the first embodiment, the second embodiment, the third embodiment, and the modified example of the third embodiment (hereinafter, the third embodiment and the modified example of the third embodiment are collectively referred to as "the third embodiment and the like"), and the description is appropriately omitted.

[0196] Similar to the first to third embodiments, the wiring substrate 70 is electrically connected to the light-emitting unit 21. The support 90 is disposed on the wiring substrate 70 to support the wavelength conversion member 10. A bonding member may or may not be disposed between the lower surface of the support 90 and the upper surface of the wiring substrate 70. Further, a bonding member may or may not be disposed between the upper surface of the support 90 and the lower surface 12 of the wavelength conversion member 10. The covering member 60F covers the first side surface 13a and the second side surface 13b of the wavelength conversion member 10, and at the same time, covers the region exposed from the lower surface 12 of the wavelength conversion member 10 of the support 90 and the light-emitting element 20D.

[0197] Examples of the support 90 include a member made of the metal material mentioned in the bonding member 81 of the first embodiment, a member made of ceramics such as aluminum nitride and silicon carbide, a member made of a light-transmissive material such as sapphire, spinel, and glass, and a member made of a white resin containing light-reflective particles and resin. When the support 90 is made of a white resin, the support 90 may be made of, for example, the same resin as the resin constituting the covering member 60D of the third embodiment, or may be made of a different resin.

[0198] When the support 90 is made of a light-reflective member such as a metal material or a white resin, the light emitted laterally from the light-emitting layer 212 of the light-emitting unit 21 can be reflected toward the wavelength conversion member 10 side. Thereby, the light extraction efficiency of the light-emitting device 4 can be improved. Further, when the support 90 is made of ceramics such as aluminum nitride and silicon carbide, the heat generated in the wavelength conversion member 10 can be efficiently released to the wiring substrate 70 side.

[0199] The covering member 60F covers the first side surface 13a and the second side surface 13b of the wavelength conversion member 10. The covering member 60F has light reflectivity. The covering member 60F covers the region of the lower surface 12 of the wavelength conversion member 10 that does not overlap with the light-emitting unit 21 in a plan view. The covering member 60F covers the side surface of the support 90. As the covering member 60F, a resin containing the same light-reflective particles as the covering member 60D of the third embodiment can be used.

[0200] According to the fourth embodiment, by supporting the wavelength conversion member 10 by the support 90, the possibility that the wavelength conversion member 10 is inclined with respect to the light-emitting unit 21 due to its own weight can be reduced.

[0201] [Modification of the Fourth Embodiment]

[0202] Hereinafter, with reference to Figure 18 a modification of the light-emitting device 4 of the fourth embodiment will be described.Figure 18 This is a cross-sectional view schematically showing a light-emitting device 4A which is a modification of the fourth embodiment. In addition, in the modification of the fourth embodiment, the same reference numerals are given to the structural components that are the same as those in the first embodiment, the second embodiment, the third embodiment, and the fourth embodiment, and the description thereof is appropriately omitted.

[0203] The main difference between the light-emitting device 4A of the modification and the fourth embodiment is that the support 90G is composed of a light-reflective member 91 and a protection element 92. The protection element 92 is an element for protecting the light-emitting element 20D from being damaged or deteriorated in performance due to excessive voltage application. The protection element is, for example, a Zener diode that becomes in an energized state when a voltage higher than a specified voltage is applied. The protection element 92 is disposed on the wiring substrate 70. Specifically, the protection element 92 is electrically connected to the third metal layers 74a and 74b of the wiring substrate 70 through the third bonding members 86a and 86b. The light-reflective member 91 is disposed on the protection element 92. Therefore, the light absorption of the protection element 92 can be reduced. The light-reflective member 91 is made of, for example, a white resin. The light-reflective member 91 can be disposed on the protection element 92 through an adhesive member or can be disposed without an adhesive member.

[0204] As Figure 18 shown, the covering member 60G that covers the first side surface 13a and the second side surface 13b of the wavelength conversion member 10 covers the side surfaces of the light-reflective member 91 and the protection element 92. By covering the side surface of the protection element 92 with the covering member 60G, the light emitted laterally from the light-emitting layer 212 of the light-emitting unit 21 is reflected by the covering member 60G before reaching the protection element 92 and is directed toward the wavelength conversion member 10 side. That is, the light emitted laterally from the light-emitting layer 212 of the light-emitting unit 21 is not absorbed by the protection element 92. Thereby, the light extraction efficiency of the light-emitting device 4A can be improved.

[0205] [Fifth Embodiment]

[0206] [Overall Structural Example of Light-Emitting Device 5]

[0207] Hereinafter, with reference to Figure 19 the structural example of the light-emitting device 5 of the fifth embodiment will be described. Figure 19 This is a cross-sectional view schematically showing an example of the overall structure of the light-emitting device 5 of the fifth embodiment. In Figure 19 the example shown, the light-emitting device 5 includes a wavelength conversion member 10, a light-emitting element 20D having a light-emitting unit 21 and a light-transmissive member 30D, a light adjustment member 40, a covering member 60H, a wiring substrate 70, and a protection element 92H.

[0208] As Figure 19As shown, the protection element 92H is disposed on the wiring substrate 70. Specifically, the protection element 92H is electrically connected to the third metal layers 74c and 74d of the wiring substrate 70 through the third bonding members 86c and 86d. The protection element 92H is disposed in a region that overlaps with the light adjustment member 40 in a plan view. In addition, the upper surface, the lower surface, and the side surface of the protection element 92H are covered by the covering member 60H. Thus, the light emitted laterally from the light-emitting layer 212 of the light-emitting unit 21 is reflected by the covering member 60H before reaching the protection element 92H and is directed toward the wavelength conversion member 10. That is, the light emitted laterally from the light-emitting layer 212 of the light-emitting unit 21 is not absorbed by the protection element 92H. Thereby, the light extraction efficiency of the light-emitting device 5 can be improved.

[0209] The lower surface 12 of the wavelength conversion member 10 is separated from the upper surface of the protection element 92H. A part of the covering member 60H is located between the lower surface 12 of the wavelength conversion member 10 and the upper surface of the protection element 92H. The thickness of the covering member 60H located between the lower surface 12 of the wavelength conversion member 10 and the upper surface of the protection element 92H is smaller than the thickness of the light-transmissive member 30D. Therefore, the distance between the upper surface of the protection element 92H and the lower surface 12 of the wavelength conversion member 10 can be shortened. As a result, even when the wavelength conversion member 10 is inclined with respect to the light-emitting unit 21, the situation where the wavelength conversion member 10 is inclined to a specified inclination or more can be reduced. In addition, the possibility that the luminance distribution and chromaticity of the light emitted from the light-emitting device 5 deviate from the desired luminance distribution and chromaticity can be reduced. Here, different from the example Figure 19 shown, the upper surface of the protection element 92H may also be in contact with the lower surface 12 of the wavelength conversion member 10.

[0210] [Embodiment]

[0211] The luminance and light beam of the light emitted from the light-emitting surfaces of the following Example 1, Example 2, and Comparative Example 1 were calculated using optical simulation software (optical design software "LightTools" manufactured by Synopsys, Inc.). Refer to Figure 20 、 Figure 21 and Table 1 to describe the results of the related optical simulations of Example 1, Example 2, and Comparative Example 1. In addition, in the optical simulation, the powers provided when Example 1, Example 2, and Comparative Example 1 emit light were all set to the same power.

[0212] Example 1 has the same structure as the light-emitting device 3 of the third embodiment. The light-transmissive member 30D of Example 1 overlaps with the first upper surface 11a of the wavelength conversion member 10 in a plan view and does not overlap with the light adjustment member 40. Example 2 has a structure in which the light reflection film 50, the bonding member 81, and the adhesive layer 85 are removed from the light-emitting device 1 of the first embodiment. The light-transmissive member 30 of Example 2 overlaps with the first upper surface 11a of the wavelength conversion member 10 and the light adjustment member 40, respectively, in a plan view.

[0213] Refer to Figure 20 to describe the structure of Reference Example 1. Figure 20 is a cross-sectional view schematically showing the light-emitting device 1R of Reference Example 1. As Figure 20 shown, Reference Example 1 includes a light-transmissive member 30R having the same structure as that of Example 2. That is, the light-transmissive member 30R of Reference Example 1 overlaps with the first upper surface 11a of the wavelength conversion member 10 and the light adjustment member 40, respectively, in a plan view.

[0214] Reference Example 1 includes a light-emitting portion 21R disposed below the light-transmissive member 30R. The light-emitting portion 21R overlaps with the first upper surface 11a of the wavelength conversion member 10 and the light adjustment member 40 in a plan view. That is, the first semiconductor layer 211, the light-emitting layer 212, and the second semiconductor layer 213 included in the light-emitting portion 21R overlap with the first upper surface 11a of the wavelength conversion member 10 and the light adjustment member 40 in a plan view. In addition, Reference Example 1 further includes a first electrode 22, a first pad electrode 23, a second pad electrode 24, a second electrode 25, and an insulating layer 26. The first electrode 22 is electrically connected to the first semiconductor layer 211. In addition, the first electrode 22 is electrically connected to the second metal layer 73a of the wiring substrate 70 through the first pad electrode 23 and the bonding member 82a. The second electrode 25 is electrically connected to the second semiconductor layer 213 through the second pad electrode 24. In addition, the second electrode 25 is electrically connected to the second metal layer 73b through the bonding member 82b.

[0215] Refer to Figure 21 and Table 1 to describe the results of optical simulations related to Example 1, Example 2, and Reference Example 1. Figure 21 is a graph showing the relative luminance as the result of optical simulations of Example 1, Example 2, and Reference Example 1. Table 1 is a table showing the relative luminance and the relative beam values of the high-luminance regions of Example 1, Example 2, and Reference Example 1, respectively.

[0216] Figure 21 The horizontal axis of represents the distance along the X-axis direction from the boundary between the first upper surface 11a of the wavelength conversion member 10 corresponding to the high-luminance region and the upper surface of the light adjustment member 40 corresponding to the low-luminance region (i.e., the inner wall surface 14 of the wavelength conversion member 10) on the light-emitting surface of each light-emitting device.Figure 21 The vertical axis represents the relative luminance of Example 1, Example 2, and Comparative Example 1.

[0217] As Figure 21 shown, the luminance of the high-luminance region is highest in Example 1 and decreases in the order of Example 2 and Comparative Example 1. Further, as shown in Table 1, the luminous flux is also highest in Example 1 and decreases in the order of Example 2 and Comparative Example 1.

[0218] [Table 1]

[0219] Example Column 1 Example Column 2 Reference Example 1 Relative Luminance 129.1% 110.0% 100% Relative Light Beam 122.6% 102.4% 100%

[0220] According to Figure 21 the results of the optical simulation shown in Table 1, it was confirmed that by arranging the light-transmissive member 30D so as not to overlap with the light adjustment member 40 in a plan view, light with high luminance can be emitted from the first upper surface 11a of the wavelength conversion member 10 corresponding to the high-luminance region, and the luminance difference between the high-luminance region and the low-luminance region can be increased.

[0221] As described above, the preferred embodiments and the like have been described in detail. However, the present invention is not limited to the above-described embodiments and the like, and various modifications and substitutions can be made to the above-described embodiments and the like without departing from the scope recited in the claims.

[0222] The embodiments of the present disclosure can also be described as follows.

[0223] <Item 1>A light-emitting device, comprising:

[0224] a wavelength conversion member having an upper surface, a lower surface on the opposite side of the upper surface, a first side surface disposed between the upper surface and the lower surface, and a second side surface disposed between the upper surface and the lower surface and on the opposite side of the first side surface;

[0225] a light-emitting portion disposed on one side of the first side surface of the lower surface of the wavelength conversion member and having a light-emitting layer; and

[0226] a light adjustment member disposed on one side of the second side surface of the upper surface of the wavelength conversion member and not overlapping with the light-emitting layer in a plan view.

[0227] <Item 2>The light-emitting device according to <Item 1> above, wherein

[0228] it further comprises a light-transmissive member disposed between the wavelength conversion member and the light-emitting portion and extending to a position overlapping with the light adjustment member in a plan view.

[0229] <Item 3>The light-emitting device according to <Item 2> above, wherein

[0230] The upper surface of the wavelength conversion component includes a first upper surface and a second upper surface located further below than the first upper surface.

[0231] The light adjustment component is disposed on the second upper surface.

[0232] The thickness between the second upper surface and the lower surface in the wavelength conversion component is less than the thickness between the first upper surface and the lower surface in the wavelength conversion component.

[0233] <Item 4> The light-emitting device according to <Item 2> or <Item 3> above, wherein

[0234] It further includes a light reflection film, which is disposed on the lower surface of the light-transmitting component in the region where the light-transmitting component and the light adjustment component overlap in a top view.

[0235] <Item 5> The light-emitting device according to <Item 4> above, wherein

[0236] It further includes a covering component that covers the first side surface and the second side surface of the wavelength conversion component and has light reflectivity.

[0237] The covering component covers the region of the lower surface of the light-transmitting component that does not overlap with the light reflection film in a top view.

[0238] <Item 6> The light-emitting device according to <Item 4> or <Item 5> above, further comprising:

[0239] A wiring substrate, which is disposed below the light-emitting portion and the light reflection film and has a first metal layer on the upper surface; and

[0240] A first bonding component that connects the first metal layer and the light reflection film.

[0241] <Item 7> The light-emitting device according to <Item 6> above, wherein

[0242] The first bonding component includes at least one of a metal material and an alloy material.

[0243] <Item 8> The light-emitting device according to any one of <Item 4> to <Item 7> above, wherein

[0244] The light-emitting portion further includes a first semiconductor layer disposed on the lower surface side of the light-emitting layer and a second semiconductor layer disposed on the upper surface side of the light-emitting layer.

[0245] The second semiconductor layer extends to the region between the light-transmitting component and the light reflection film.

[0246] <Item 9> The light-emitting device according to <Item 8> above, further comprising:

[0247] A wiring substrate is disposed below the light-emitting portion and the light-reflecting film, and has a first metal layer and a second metal layer on its upper surface;

[0248] A first bonding member electrically connects the first metal layer and the light-reflecting film; and

[0249] A second bonding member electrically connects the second metal layer and the lower surface of the first semiconductor layer,

[0250] The light-reflecting film has conductivity.

[0251] The light-emitting device according to any one of <Item 1> to <Item 9> above <Item 10>, wherein,

[0252] The light-emitting portion includes a plurality of light-emitting layers.

[0253] The light-emitting device according to <Item 1> above <Item 11>, wherein,

[0254] It further includes a light-transmissive member disposed between the wavelength conversion member and the light-emitting portion, and not overlapping with the light adjustment member in a plan view.

[0255] The light-emitting device according to <Item 11> above <Item 12>, wherein,

[0256] It further includes a covering member covering the first side surface and the second side surface of the wavelength conversion member, and having light reflectivity,

[0257] The covering member covers an area of the lower surface of the wavelength conversion member that does not overlap with the light-emitting portion in a plan view.

[0258] The light-emitting device according to <Item 12> above <Item 13> further includes:

[0259] A wiring substrate electrically connected to the light-emitting portion; and

[0260] A support disposed on the wiring substrate to support the wavelength conversion member.

[0261] The light-emitting device according to <Item 13> above <Item 14>, wherein,

[0262] The support is made of a light-reflective member.

[0263] The light-emitting device according to <Item 13> above <Item 15>, wherein,

[0264] The support is composed of a light-reflective member and a protection element,

[0265] The protection element is disposed on the wiring substrate,

[0266] The light-reflective member is disposed on the protective element.

[0267] The light-emitting device according to <Item 16> above <Item 12> further includes:

[0268] A wiring substrate electrically connected to the light-emitting portion; and

[0269] A protective element disposed on the wiring substrate and in a region that overlaps with the light-adjusting member in a plan view, and covered by the covering member,

[0270] The lower surface of the wavelength conversion member is separated from the upper surface of the protective element,

[0271] The thickness of the covering member between the lower surface of the wavelength conversion member and the upper surface of the protective element is less than the thickness of the light-transmissive member.

Claims

1. A light emitting device, comprising: A wavelength conversion component having an upper surface, a lower surface located on the opposite side of the upper surface, a first side surface arranged between the upper surface and the lower surface, and a second side surface arranged between the upper surface and the lower surface and located on the opposite side of the first side surface; a light emitting portion, which is disposed on one side of the first side surface of the lower surface of the wavelength conversion component and has a light emitting layer; and The light adjustment member is arranged on one side of the second side surface of the upper surface of the wavelength conversion member and does not overlap with the light emitting layer in a plan view.

2. The light emitting device according to claim 1, wherein: It also includes a light-transmitting member that is disposed between the wavelength conversion member and the light-emitting unit and extends to a position overlapping with the light adjustment member in a plan view.

3. The light emitting device according to claim 2, wherein: The upper surface of the wavelength conversion component includes a first upper surface and a second upper surface located below the first upper surface. The light adjustment component is arranged on the second upper surface, A thickness between the second upper surface and the lower surface of the wavelength conversion component is smaller than a thickness between the first upper surface and the lower surface of the wavelength conversion component.

4. The light emitting device according to claim 2 or 3, wherein: The invention further includes a light reflecting film which is arranged on the lower surface of the light-transmitting member in a region where the light-transmitting member and the light-adjusting member overlap in a plan view.

5. The light emitting device according to claim 4, wherein: The method further includes a covering member that covers the first side surface and the second side surface of the wavelength conversion member and has light reflectivity. The covering member covers a region of the lower surface of the light-transmitting member that does not overlap with the light-reflecting film in a plan view.

6. The light emitting device according to claim 4 or 5, further comprising: a wiring substrate, arranged below the light emitting portion and the light reflecting film, and having a first metal layer on an upper surface; and The first bonding member connects the first metal layer and the light reflecting film.

7. The light emitting device according to claim 6, wherein: The first bonding member includes at least one of a metal material and an alloy material.

8. The light emitting device according to any one of claims 4 to 7, wherein: The light emitting portion further includes a first semiconductor layer disposed on the lower surface side of the light emitting layer, and a second semiconductor layer disposed on the upper surface side of the light emitting layer. The second semiconductor layer extends to a region between the light-transmitting member and the light-reflecting film.

9. The light emitting device according to claim 8, further comprising: a wiring substrate, which is arranged below the light emitting portion and the light reflecting film and has a first metal layer and a second metal layer on an upper surface; a first bonding member electrically connecting the first metal layer and the light reflecting film; and a second bonding component electrically connecting the second metal layer and the lower surface of the first semiconductor layer, The light reflecting film has conductivity.

10. The light emitting device according to any one of claims 1 to 9, wherein: The light-emitting portion includes a plurality of light-emitting layers.

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