Full-color Micro-LED device, preparation method and head-mounted display equipment

Abstract

The invention discloses a full-color Micro-LED device, a preparation method of the full-color Micro-LED device and head-mounted display equipment. The full-color Micro-LED device comprises a driving backboard, a blue light LED epitaxial wafer, a first light conversion layer and a second light conversion layer which are sequentially stacked, the first light conversion layer and the second light conversion layer are both complete structure layers; a plurality of light output areas provided with optical filters are arranged on the surface, deviating from the first light conversion layer, of the second light conversion layer; the optical filter on each light output area is one of a red light optical filter, a blue light optical filter or a green light optical filter; one of the first light conversion layer and the second light conversion layer is a green light conversion layer, and the other one is a red light conversion layer. According to the full-color Micro-LED device, the green light conversion layer and the red light conversion layer are stacked and do not need to be etched, the processing difficulty of the light conversion layers is reduced, regional output of light rays of three different colors is achieved through the optical filter, and the high resolution of the full-color Micro-LED device is guaranteed.

Description

Technical Field

[0001] The present invention relates to the technical field of full-color Micro-LED device products, and particularly to a full-color Micro-LED device, a preparation method thereof, and a head-mounted display device. Background Art

[0002] Micro-LEDs have advantages such as high resolution, high brightness, and low power consumption, and are widely used in virtual reality display technology and augmented reality display technology. Quantum dot color conversion materials have excellent characteristics such as continuously tunable emission spectra, high fluorescence quantum yields, high color purity, and solution processability; when the quantum dot color conversion materials are irradiated with high-energy ultraviolet light or blue light, depending on the different quantum dot color conversion materials, light in bands such as green light and red light can be radiated and generated; based on this, the full-colorization of Micro-LEDs can be achieved by using quantum dot color conversion materials.

[0003] In full-color Micro-LEDs, different quantum dot color conversion layers need to be provided in corresponding regions of different pixel points to achieve the output of three different colors of light: red, green, and blue. Existing methods for preparing quantum dot color conversion layers mainly include various different preparation methods such as inkjet printing technology, lithography technology, and nanoimprinting technology. However, the quantum dot color conversion layers formed by the above various preparation methods have problems such as low processing accuracy and low pixel point resolution. Summary of the Invention

[0004] The purpose of the present invention is to provide a full-color Micro-LED device, a preparation method thereof, and a head-mounted display device, which can reduce the device processing difficulty to a certain extent and improve the high resolution of the device.

[0005] To solve the above technical problems, the present invention provides a full-color Micro-LED device, including: a driving backplane, a blue-light LED epitaxial wafer, a first light conversion layer, and a second light conversion layer stacked in sequence; and both the first light conversion layer and the second light conversion layer are integrally formed complete structural layers; on the surface of the second light conversion layer facing away from the first light conversion layer, there are multiple light output regions provided with filter films; the filter film on each light output region is one of a red light filter film, a blue light filter film, or a green light filter film;

[0006] Wherein, one of the first light conversion layer and the second light conversion layer is a green light conversion layer and the other is a red light conversion layer.

[0007] In an optional embodiment of the present application, the blue-light LED epitaxial wafer includes a plurality of blue-light LED units distributed in an array; a first light-blocking dielectric layer is filled in the gap groove between any two adjacent blue-light LED units;

[0008] Moreover, the distribution positions of the respective blue light LED units correspond one-to-one to and face the respective light output regions.

[0009] In an optional embodiment of the present application, the thicknesses of the first light conversion layer and the second light conversion layer are both not greater than a set thickness.

[0010] In an optional embodiment of the present application, the thicknesses of the first light conversion layer and the second light conversion layer are 500 nm to 1000 nm.

[0011] In an optional embodiment of the present application, the respective light output regions on the surface of the second light conversion layer are arranged in an array; and a second light blocking medium layer is provided between the light filters provided on two adjacent light output regions.

[0012] In an optional embodiment of the present application, the area of the first light blocking medium is smaller than the area of the second light blocking medium.

[0013] In an optional embodiment of the present application, a light transmissive medium layer is further provided between the first light conversion layer and the second light conversion layer.

[0014] In an optional embodiment of the present application, the first light conversion layer is a green light conversion layer and the second light conversion layer is a red light conversion layer.

[0015] A method for manufacturing a full-color Micro-LED device, which is applied to the full-color Micro-LED device described in any one of the above; the manufacturing method includes:

[0016] Stacking a blue light LED epitaxial wafer, a first light conversion layer, and a second light conversion layer on a driving backplane in sequence; wherein, one of the first light conversion layer and the second light conversion layer is a green light conversion layer and the other is a red light conversion layer;

[0017] Light filters are respectively provided on the respective light output regions on the second light conversion layer; wherein, the light filter on each light output region is one of a red light filter, a blue light filter, or a green light filter.

[0018] In an optional embodiment of the present application, sequentially fabricating a blue light LED epitaxial wafer, a first light conversion layer, and a second light conversion layer on a driving backplane includes:

[0019] Sequentially fabricating the blue light LED epitaxial wafer and the first light conversion layer on the driving backplane;

[0020] Forming a light transmissive medium layer on the first light conversion layer;

[0021] The second light conversion layer is formed on the light-transmitting medium layer.

[0022] A head-mounted display device includes the full-color Micro-LED device described in any one of the above, and an optical element disposed on the output optical path of the full-color Micro-LED device.

[0023] A full-color Micro-LED device provided by the present invention, a preparation method thereof, and a head-mounted display device. The full-color Micro-LED device includes: a driving backplane, a blue LED epitaxial wafer, a first light conversion layer, and a second light conversion layer stacked in sequence; and both the first light conversion layer and the second light conversion layer are integrally formed complete structural layers; on the surface of the second light conversion layer facing away from the first light conversion layer, there are a plurality of light output regions provided with filter films; the filter film on each light output region is one of a red light filter film, a blue light filter film, or a green light filter film; wherein, one of the first light conversion layer and the second light conversion layer is a green light conversion layer and the other is a red light conversion layer.

[0024] In the full-color Micro-LED device of the present application, the blue light output by the blue LED epitaxial wafer is used as the excitation light source for generating red light and green light, and is also used as the light source for outputting blue light. Thus, the structure of setting a blue light conversion layer is eliminated; on this basis, the green light conversion layer and the red light conversion layer are stacked; and the green light conversion layer and the red light conversion layer are not formed into different light conversion layers corresponding to different colors by partitioning, but are integrally formed complete structural layers, that is to say, the two stacked light conversion layers of the green light conversion layer and the red light conversion layer do not need to be etched to form several independent light conversion layer regions, thereby reducing the preparation difficulty of the light conversion layer; correspondingly, the blue light output by the blue LED epitaxial wafer forms white light after passing through the green light conversion layer and the red light conversion layer; further, red, blue, and green filter films of three different colors are respectively provided on each output region, and the filtering effect of the filter films is used to realize the sub-region output of three different colors of light, ensuring the high resolution of the full-color Micro-LED device.

[0025] It can be seen that the full-color Micro-LED device in the present application can more simply ensure the high resolution of the device on the basis of reducing the preparation difficulty of the light conversion layer in the device. Description of the Drawings

[0026] In order to more clearly illustrate the technical solutions of the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0027] Figure 1 This is a schematic cross-sectional structure diagram of a full-color Micro-LED device provided by an embodiment of the present application;

[0028] Figure 2 This is a schematic flow diagram of a preparation method of a full-color Micro-LED device provided by an embodiment of the present application. Detailed implementation manners

[0029] In a full-color Micro-LED device, it is necessary to have pixel points that can simultaneously output light of three primary colors, red, green, and blue. Currently, a relatively common implementation method is to form quantum dot color conversion layers corresponding to different color lights in a partitioned manner on the excitation light output surface of the Micro-LED device; and in the process of forming different quantum dot color conversion layers on the same excitation light output surface, usually, after forming a quantum dot color conversion layer on the entire excitation light output surface, the quantum dot conversion layer is etched and patterned, and only the quantum dot color conversion layer in some regions is retained; then, a second quantum dot color conversion layer is formed and set in the remaining regions on the excitation light output surface, and the same etching and patterning process is carried out, and finally, only a part of the second quantum dot color conversion layer is retained; thus, quantum dot color conversion layers corresponding to different colors can be formed in different regions on the excitation light output surface respectively.

[0030] However, in the process of etching each quantum dot color conversion layer, not only will the quantum dot color conversion layer be damaged, affecting the working performance of the quantum dot color conversion layer, but also the entire process is relatively complex and the preparation efficiency is low.

[0031] Therefore, the present application provides a full-color Micro-LED device and its preparation method, as well as a head-mounted display device, which do not require etching and patterning of the quantum dot color conversion layer, and can simplify the preparation process of the Micro-LED device to a certain extent.

[0032] In order to enable those skilled in the art to better understand the solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific implementation manners. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0033] As Figure 1 shown, Figure 1 This is a schematic cross-sectional structure diagram of a full-color Micro-LED device provided by an embodiment of the present application.

[0034] In a specific embodiment of the present application, the full-color Micro-LED device may include:

[0035] A driving backplane 1, a blue light LED epitaxial wafer 2, a first light conversion layer 3, and a second light conversion layer 5 are sequentially stacked and arranged; and both the first light conversion layer 3 and the second light conversion layer 5 are integrally formed complete structural layers;

[0036] On the surface of the second light conversion layer 5 facing away from the first light conversion layer 3, there are a plurality of light output regions provided with color filters; the color filter on each light output region is one of a red light filter 62, a blue light filter 63, or a green light filter 61;

[0037] Wherein, one of the first light conversion layer 3 and the second light conversion layer 5 is a green light conversion layer and the other is a red light conversion layer.

[0038] Such as Figure 1 As shown, in this embodiment, the driving backplane 1 includes, but is not limited to, PCB, glass, and silicon-based, etc. Its important function is to provide energy for the blue light LED epitaxial wafer 2 to drive the blue light LED epitaxial wafer 2 to output blue light. The driving method of the driving backplane 1 for the blue light LED epitaxial wafer 2 includes, but is not limited to, CMOS driving and TFT driving.

[0039] It can be understood that for the blue light LED epitaxial wafer 2 that can output blue light in this embodiment, it is both the source of outputting blue light in the full-color Micro-LED device and the excitation light for generating red light and green light. Therefore, in this embodiment, only two different light conversion layers, namely the first light conversion layer 3 and the second light conversion layer 5, are provided on the blue LED epitaxial wafer. It can be understood that both the first light conversion layer 3 and the second light conversion layer 5 should be quantum dot conversion layers, but can output two different colors of light when irradiated with blue light.

[0040] It should be noted that in practical applications, it can be that the first light conversion layer 3 is a red light conversion layer and the second light conversion layer 5 is a green light conversion layer, or it can be that the first light conversion layer 3 is a green light conversion layer and the second light conversion layer 5 is a red light conversion layer. In addition, both the green light conversion layer and the red light conversion layer can be a structural layer formed by any one or several of cadmium-based quantum dots, InP quantum dots, perovskite quantum dots, carbon quantum dots, or perovskite thin films.

[0041] On this basis, a red light filter 62, a blue light filter 63, and a green light filter 61 are also partitioned and arranged on the surface of the second light conversion layer 5 facing away from the first light conversion layer 3. Obviously, the area where the red light filter 62 is arranged is also the corresponding red light output area, the area where the green light filter 61 is arranged is also the corresponding green light output area, and the area where the blue light filter 63 is arranged is also the blue light output area. Of course, different from the setting method of the quantum dot color conversion layer in a conventional full-color Micro-LED device, the first light conversion layer 3 and the second light conversion layer 5 in this embodiment are both integrally formed complete structural layers, that is to say, the first light conversion layer 3 and the second light conversion layer 5 do not need to be etched to form a number of small units, and the coverage areas of the first light conversion layer 3 and the second light conversion layer 5 completely cover the light-emitting surface of the entire blue LED epitaxial wafer, rather than partial areas.

[0042] It can be understood that in a full-color Micro-LED device, a relatively large number of pixel points need to be set, and each pixel point should include three output areas that can respectively output three primary color lights, that is to say, for each pixel point, three filters, namely a red light filter 62, a blue light filter 63, and a green light filter 61, should be set; the arrangement method between the pixel points in the device and the arrangement method between the filters in each pixel point are set based on the application requirements of the specific device, and no specific limitations are made in this embodiment.

[0043] In addition, the area size of the pixel points formed by the three different color filters determines the resolution of the full-color Micro-LED device. Compared with the resolution in a conventional full-color Micro-LED device directly determined by the size of each quantum dot light conversion layer, the resolution of the full-color Micro-LED device in this embodiment is determined by the area size of each filter, and the size of each pixel point can be reduced to a smaller extent to a certain degree, that is to say, the full-color Micro-LED device in this embodiment can achieve a higher resolution.

[0044] To further illustrate the working mode of the full-color Micro-LED device, the following takes the case where the first light conversion layer 3 is a green light conversion layer and the second light conversion layer 5 is a red light conversion layer. When the driving backplane 1 supplies energy to the blue LED epitaxial wafer 2 and the blue LED epitaxial wafer outputs blue light, the blue light first enters the green light conversion layer. As a result, part of the light in the blue light is absorbed by the green light conversion layer and the green light conversion layer is excited to output green light, while part of the light directly passes through the green light conversion layer by transmission. Therefore, the light output after passing through the green light conversion layer is the mixed light of blue light and green light. This mixed light enters the red light conversion layer. The green light in the mixed light does not have an exciting effect on the red light conversion layer and directly passes through by transmission, while part of the blue light in the mixed light is absorbed by the red light conversion layer and the red light conversion layer is excited to generate and output red light. However, there is still part of the blue light that is neither absorbed by the green light conversion layer nor absorbed by the red light conversion layer. Therefore, the light finally output from the second light conversion layer 5 is white light mixed with green light, red light, and blue light. The white light passes through the filtering effects of three different color filters, namely, a red light filter 62, a green light filter 61, and a blue light filter 63, provided on the second light conversion layer 5, and then three different color lights can be output in zones. That is to say, in this embodiment, different color filters are used to realize the zonal output of different color lights, instead of setting light conversion layers corresponding to different color lights in zones to realize the zonal output of different color lights, thereby eliminating the etching process for the first light conversion layer 3 and the second light conversion layer 5.

[0045] In addition, it should be noted that for the red light conversion layer and the green light conversion layer, the absorption rate of the red light conversion layer for blue light is greater than that of the green light conversion layer. Therefore, in order to avoid the problem that the absorption efficiency of the red light conversion layer for blue light is too high, resulting in insufficient energy of the blue light required for the final excitation of the green light conversion layer, and further causing insufficient brightness of the output green light, the green light conversion layer can be preferentially selected as the first light conversion layer 3 and the red light conversion layer as the second light conversion layer 5.

[0046] Of course, in practical applications, it is also possible to consider using the red light conversion layer as the first light conversion layer 3 and the green light conversion layer as the second light conversion layer 5, and on this basis, setting the thickness of the red light conversion layer to be less than that of the green light conversion layer, thereby reducing the absorption amount of the red light conversion layer for blue light, so that the energy levels of the finally output red light and green light can reach a balanced state and meet the actual application requirements.

[0047] Based on the above discussion, in this embodiment, it is not necessary to etch and partition the first light conversion layer 3 and the second light conversion layer 5 on the blue LED epitaxial wafer 2. Instead, they are stacked in the form of a complete structural layer and completely cover the light-emitting surface of the entire blue LED epitaxial wafer 2. Eventually, the output of three primary color lights can also be achieved. Therefore, in the actual process of fabricating the first light conversion layer 3 and the second light conversion layer 5, it is not necessary to pattern-etch the two light conversion layers, which can not only avoid damage to the two different light conversion layers but also simplify the fabrication process of the entire device to a certain extent.

[0048] It can be understood that when each pixel in a full-color Micro-LED device outputs light, it selectively outputs lights of different colors based on the requirements of the actual display pattern. That is to say, for the three primary color output regions of the same pixel, at the same time, perhaps only one or two of the output regions output the corresponding color lights. For example, when the pixel region needs to output red light, only the red light output region of the pixel outputs light, and the other two output regions corresponding to the other colors do not display light. Therefore, in an optional embodiment of the present application, the full-color Micro-LED device may further include:

[0049] The blue LED epitaxial wafer 2 includes a plurality of blue LED units 21 distributed in an array; a first light-blocking dielectric layer 7 is filled in the gap groove between any two adjacent blue LED units 21.

[0050] As Figure 1 shown, in this embodiment, the blue LED epitaxial wafer is divided into a plurality of blue LED units 21, each blue LED unit 21 corresponds to an output region, and the first light-blocking dielectric layer 7 is filled between two adjacent blue LED units 21. Thus, for each pixel, the three output regions corresponding to its three different colors respectively correspond to three blue LED units 21, and the three blue LED units 21 can obviously output blue light independently of each other. Therefore, when each pixel needs to selectively control the color of the output light, it can be achieved by selectively controlling some of the three blue LED units 21 to emit light while the other part does not emit light. Of course, for the first light-blocking dielectric layer 7, on the one hand, it can fill the gap groove between two adjacent blue LED units 21, and on the other hand, it also serves the purpose of blocking the light crosstalk between adjacent blue LED units 21.

[0051] Based on the above embodiments, it is further considered that although there are gaps and the first light-blocking medium layer 7 is filled between the blue LED units 21 corresponding to the three different color output areas, the light output by the blue LED unit 21 may have crosstalk problems after passing through the first light conversion layer 3 and the second light conversion layer 5 in sequence. For example, when a certain pixel point only needs to output red light, when the blue light output by the blue LED unit 21 corresponding to the red light output area passes through the first light conversion layer 3 and the second light conversion layer 5 in sequence, part of the blue light may enter the blue light output area adjacent to the red light output area, which means that when the pixel point finally outputs light, a small amount of blue light is mixed in the red light, which makes it difficult to meet the application requirements of full-color Micro-LED devices.

[0052] To solve the above problem, the light crosstalk problem can be avoided by reducing the thickness of the first light conversion layer 3 and the second light conversion layer 5 as much as possible. In another optional embodiment of the present application, the thickness of the first light conversion layer 3 and the second light conversion layer 5 is not greater than the set thickness.

[0053] Therefore, even if the light output by two adjacent blue light LED units 21 will have a certain lateral diffusion in the first light conversion layer 3 and the second light conversion layer 5, because the thickness of the first light conversion layer 3 and the second light conversion layer 5 is relatively thin, the optical path of the blue light lateral diffusion in the first light conversion layer 3 and the second light conversion layer 5 is also very small, thereby greatly reducing the amplitude of the lateral diffusion of the light, thereby avoiding the problem of light crosstalk. The thickness of the first light conversion layer 3 and the second light conversion layer 5 can be 500nm to 1000nm; specifically, the thickness of the first light conversion layer 3 and the second light conversion layer 5 can be 500nm, 600nm, 700nm, 800nm, 900nm, 1000nm.

[0054] On this basis, in order to further solve the crosstalk problem of the output areas of different light rays, in another optional embodiment of the present application, the full-color Micro-LED device may further include:

[0055] The light output regions on the surface of the second light conversion layer 5 are distributed in an array; and a second light blocking medium layer 8 is provided in the non-light output region between the filters provided on two adjacent light output regions.

[0056] like Figure 1 As shown, in this embodiment, two adjacent filters are separated by a second light-blocking medium layer 8. Therefore, even if there is some lateral diffusion of the light after passing through the first light conversion layer 3 and the second light conversion layer 5, it can be well blocked by the second light-blocking medium layer 8 through the light-blocking effect of the second light-blocking medium layer 8, thereby avoiding the problem of light crosstalk.

[0057] In addition, the second light-blocking dielectric layer 8 and the first light-blocking dielectric layer 7 can be of the same material structure layer. For example, a light-blocking black matrix polymer material can be used to form the light-blocking dielectric layer. And, in order to better avoid light crosstalk and ensure the high resolution of the full-color Micro-LED device, in practical applications, the area of the first light-blocking medium can be smaller than that of the second light-blocking medium, that is to say, the width of the gap groove between two adjacent blue LED units 21 is smaller than the width of the gap between the corresponding two filter films.

[0058] Based on any of the above embodiments, further considering that in the process of actually fabricating a full-color Micro-LED device, directly forming the second light conversion layer 5 on the first light conversion layer 3 may cause damage to the first light conversion layer 3. Therefore, in another optional embodiment of the present application, a light-transmitting dielectric layer 4 can be further provided between the first light conversion layer 3 and the second light conversion layer 5. Thus, after forming the first light conversion layer 3, a structure can be formed in which the light-transmitting dielectric layer 4 is formed on the first light conversion layer 3 and then the second light conversion layer 5 is further provided.

[0059] It can be understood that the thickness of the light-transmitting dielectric layer 4 should not be too thick in practical applications. For example, it can be in the range of 20 nm to 50 nm. The total thickness of the first light conversion layer 3, the light-transmitting dielectric layer 4, and the second light conversion layer 5 can be in the range within 2 um. In addition, the light-transmitting dielectric layer 4 can specifically be a structural layer formed of any one of metal oxides (such as Al2O3, ZrO2), non-metal oxides (such as SiO2, etc.), metal nitrides (such as AlN), or non-metal nitrides (such as Si3N4).

[0060] In summary, in the present application, the blue light output by the blue LED epitaxial wafer is used as the excitation light source for generating red light and green light, and is also used as the light source for outputting blue light. Thus, the structure of the blue light conversion layer is eliminated; and the green light conversion layer and the red light conversion layer are stacked, and both the green light conversion layer and the red light conversion layer are integral and complete structural layers, without the need for etching patterning treatment on the green light conversion layer and the red light conversion layer. Thus, the preparation difficulty of the light conversion layer is reduced and damage to the light conversion layer is avoided; and the filtering effects of three different color filter films are used to achieve the sub-region output of three different color lights, which is beneficial to ensuring the high resolution of the full-color Micro-LED device. Therefore, in the present application, on the basis of reducing the preparation difficulty of the light conversion layer in the full-color Micro-LED device, it is simpler to ensure the high resolution of the device.

[0061] Based on the above discussion, the present application also provides a method for fabricating a full-color Micro-LED device, asFigure 2 As shown, the preparation method may include:

[0062] S1: Stack a blue light LED epitaxial wafer, a first light conversion layer, and a second light conversion layer on the driving backplane in sequence.

[0063] Among them, one of the first light conversion layer and the second light conversion layer is a green light conversion layer and the other is a red light conversion layer; and the thicknesses of the first light conversion layer and the second light conversion layer are both not greater than the set thickness.

[0064] It should be noted that in the process of preparing the blue light LED epitaxial wafer, a layer of blue light LED epitaxial wafer can be formed by covering the entire surface of the driving backplane first; on this basis, in order to achieve relatively independent output of different colors of light in each different light output area, the complete blue light LED epitaxial wafer can be further etched and patterned so that the blue light LED epitaxial wafer forms a number of spaced blue LED units. On this basis, a light blocking dielectric layer is filled in the gap grooves between the blue LED units.

[0065] In the actual preparation process, a spin coating process or the like can be used to first form a film layer structure of any one of a cadmium-based quantum dot film, an InP quantum dot film, a perovskite quantum dot film, a carbon quantum dot film, or a perovskite film on the entire surface of the blue LED epitaxial wafer as the first light conversion layer. Considering that if the second light conversion layer is directly prepared, it may damage the first light conversion layer. Therefore, a transparent metal oxide layer (such as Al2O3, ZrO2), a non-metal oxide (such as SiO2, etc.), a metal nitride (such as AlN), or a non-metal nitride (such as Si3N4) can be deposited on the first light conversion layer by techniques such as metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD) as a light-transmitting dielectric layer. On this basis, the second light conversion layer is further formed on the light-transmitting dielectric layer in a manner similar to that of forming the first light conversion layer.

[0066] S2: Set filters in each light output area on the second light conversion layer.

[0067] Among them, the filter on each light output area is one of a red light filter, a blue light filter, or a green light filter.

[0068] It can be understood that each light output area should correspond one-to-one to each of the above blue LED units.

[0069] On this basis, a light blocking dielectric layer can also be further filled in the gap between adjacent filters.

[0070] In this embodiment, the first light conversion layer and the second light conversion layer are stacked on the blue LED epitaxial wafer to completely cover the light-emitting surface of the entire blue LED epitaxial wafer. There is no need to pattern-etch the first light conversion layer and the second light conversion layer, which can not only avoid damaging the two different light conversion layers, but also simplify the manufacturing process of the entire device to a certain extent. By respectively arranging color filters corresponding to the three primary colors in different output regions, the output of three primary color lights can be realized, which can ensure the high resolution of the full-color Micro-LED device to a certain extent.

[0071] This application also provides an embodiment of a head-mounted display device. The head-mounted display device may include the full-color Micro-LED device described in any of the above items, and an optical element disposed on the output optical path of the full-color Micro-LED device.

[0072] The head-mounted display device in this embodiment may be an AR display device, a VR display device, or other types of display devices, which are not specifically limited in this application. The head-mounted display device in this embodiment uses the full-color Micro-LED device described in any of the above as a light source device, which can simplify the manufacturing process of the light source device on the basis of ensuring the high resolution of the light source device in the head-mounted display device, thereby reducing the manufacturing cost of the head-mounted display device to a certain extent, and is conducive to the wide application of display devices such as AR display devices and VR display devices.

[0073] It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes the inherent elements thereof. Without further limitation, an element defined by the statement "including a..." does not exclude the existence of additional identical elements in the process, method, article or device including the said element. In addition, the parts of the above technical solutions provided in the embodiments of this application that are consistent with the corresponding technical solutions in the prior art in terms of implementation principles are not described in detail to avoid excessive elaboration.

[0074] Specific examples are used in this article to elaborate on the principles and implementation manners of the present invention. The description of the above embodiments is only used to help understand the method and its core idea of the present invention. It should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and modifications can be made to the present invention, and these improvements and modifications also fall within the protection scope of the claims of the present invention.

Claims

1. A full-color Micro-LED device, characterized in that, Comprising: A driving backplane, a blue light LED epitaxial wafer, a first light conversion layer, and a second light conversion layer which are sequentially stacked; and both the first light conversion layer and the second light conversion layer are integrally formed complete structural layers; on the surface of the second light conversion layer facing away from the first light conversion layer, there are multiple light output regions provided with filter films; the filter film on each light output region is one of a red light filter film, a blue light filter film, or a green light filter film; Wherein, one of the first light conversion layer and the second light conversion layer is a green light conversion layer and the other is a red light conversion layer.

2. The full-color Micro-LED device according to claim 1, wherein The blue light LED epitaxial wafer includes a plurality of blue light LED units distributed in an array; a first light blocking medium layer is filled in the gap grooves between any two adjacent blue light LED units; And the distribution positions of each of the blue light LED units correspond one-to-one and face each of the light output regions.

3. The full-color Micro-LED device according to claim 2, wherein The thicknesses of both the first light conversion layer and the second light conversion layer are not greater than a set thickness.

4. The full-color Micro-LED device according to claim 3, wherein The thicknesses of the first light conversion layer and the second light conversion layer are 500nm to 1000nm.

5. The full-color Micro-LED device according to claim 2, characterized in that, On the surface of the second light conversion layer, each of the light output regions is distributed in an array; and a second light blocking medium layer is provided between the filter films provided on two adjacent light output regions.

6. The full-color Micro-LED device according to claim 5, wherein The area of the first light blocking medium is smaller than the area of the second light blocking medium.

7. The full-color Micro-LED device according to any one of claims 1 to 6, characterized in that A light transmissive medium layer is further provided between the first light conversion layer and the second light conversion layer.

8. The full-color Micro-LED device according to claim 1, wherein The first light conversion layer is a green light conversion layer and the second light conversion layer is a red light conversion layer.

9. A method for preparing a full-color Micro-LED device, characterized in that, Applied to the full-color Micro-LED device according to any one of claims 1 to 8; the preparation method includes: Sequentially stacking and forming a blue light LED epitaxial wafer, a first light conversion layer, and a second light conversion layer on the driving backplane; wherein, one of the first light conversion layer and the second light conversion layer is a green light conversion layer and the other is a red light conversion layer; Respectively providing filter films on each of the light output regions on the second light conversion layer; wherein, the filter film on each light output region is one of a red light filter film, a blue light filter film, or a green light filter film.

10. The manufacturing method of the full-color Micro-LED device according to claim 9, characterized in that, Sequentially preparing and forming a blue light LED epitaxial wafer, a first light conversion layer, and a second light conversion layer on the driving backplane, including: Sequentially preparing and forming the blue light LED epitaxial wafer and the first light conversion layer on the driving backplane; Forming a light transmissive medium layer on the first light conversion layer; Forming the second light conversion layer on the light transmissive medium layer.

11. A head-mounted display device, characterized in that, Including the full-color Micro-LED device according to any one of claims 1 to 8, and an optical element provided on the output optical path of the full-color Micro-LED device.

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