Light-emitting device, manufacturing method thereof, display panel and display device

Abstract

The embodiment of the invention provides a light-emitting device and a manufacturing method thereof, a display panel and a display device, and belongs to the technical field of display. The light-emitting device comprises a light-emitting layer and a color conversion layer, the light-emitting layer comprises at least one light-emitting unit, and the color conversion layer is located on the first surface of the light-emitting layer. The color conversion layer includes multiple quantum wells and is made of an inorganic material. According to the embodiment of the invention, the problems that the color conversion layer made of an organic material is not resistant to temperature and poor in reliability can be solved.

Description

Light-emitting device and manufacturing method thereof, display panel, and display device Technical Field

[0001] The embodiments of the present disclosure relate to the field of display technology, and in particular to a display panel, a manufacturing method thereof, and a display device. Background Art

[0002] Display devices have a wide range of applications in daily life, such as in electronic devices such as mobile phones and tablet computers. Light-emitting devices are an important component of display devices.

[0003] In related technologies, the light-emitting device includes a light-emitting layer and a color conversion layer. The light-emitting layer includes at least one light-emitting unit. The color conversion layer is located on one side of the light-emitting layer. The color conversion layer includes at least one quantum dot color conversion unit corresponding one-to-one to at least one light-emitting unit. The quantum dot color conversion unit is made of organic material.

[0004] However, since the quantum dot color conversion unit is made of organic materials, the color conversion layer has problems such as low temperature resistance and poor reliability.

[0005] Summary of the Invention

[0006] The present disclosure provides a light-emitting device and a method for manufacturing the same, a display panel, and a display device, which can improve the temperature instability and poor reliability of color conversion layers made of organic materials. The technical solution is as follows:

[0007] On the one hand, a light-emitting device is provided, which includes a light-emitting layer and a color conversion layer, the light-emitting layer includes at least one light-emitting unit, and the color conversion layer is located on the first surface of the light-emitting layer; the color conversion layer includes a multi-quantum well and is made of inorganic material.

[0008] Optionally, the at least one light-emitting unit includes a first light-emitting unit, a second light-emitting unit and a third light-emitting unit, and the color conversion layer includes a first color conversion layer and a second color conversion layer stacked in sequence in a direction from close to the light-emitting layer to away from the light-emitting layer; the orthographic projection of the first color conversion layer on the first surface at least partially overlaps with the orthographic projection of the first light-emitting unit on the first surface, and the first color conversion layer is used to convert the light emitted by the first light-emitting unit into light of a first color; the orthographic projection of the second color conversion layer on the first surface at least partially overlaps with the orthographic projection of the second light-emitting unit on the first surface, and the second color conversion layer is used to convert the light emitted by the second light-emitting unit into light of a second color.

[0009] Optionally, the light-emitting device further includes a first adhesive layer and a second adhesive layer, the first adhesive layer is located between the light-emitting layer and the color conversion layer, the second adhesive layer is located between the first color conversion layer and the second color conversion layer, and the first adhesive layer and the second adhesive layer are both made of transparent material.

[0010] Optionally, each of the light-emitting units is configured to emit blue light.

[0011] Optionally, the color conversion layer further includes a third color conversion layer, which is located on a side of the first color conversion layer away from the second color conversion layer; the third color conversion layer is used to convert the light emitted by the third light-emitting unit into light of a third color, and the orthographic projection of the third color conversion layer on the first surface at least partially overlaps with the orthographic projection of the third light-emitting unit on the first surface.

[0012] Optionally, each of the light-emitting units is configured to emit ultraviolet light.

[0013] Optionally, each of the light-emitting units includes a first pin and a second pin, and the first pin and the second pin are located on a side of the light-emitting unit away from the color conversion layer.

[0014] Optionally, the adjacent first light-emitting unit, the second light-emitting unit and the third light-emitting unit are an integrated structure and share one first pin.

[0015] Optionally, the first color conversion layer includes M stacked first repeating units, the first repeating unit including a first barrier layer and a first well layer stacked in a direction from close to the first surface to away from the first surface; the second color conversion layer includes N stacked second repeating units, the second repeating unit including a second barrier layer and a second well layer stacked in a direction from close to the first surface to away from the first surface; M and N are both positive integers, 20<M≤70, 20<N≤70.

[0016] Optionally, the first barrier layer is made of InGaN and the first well layer is made of GaN, or the first barrier layer is made of CaSSe and the first well layer is made of CaSe, or the first barrier layer is made of CdMgZnSe and the first well layer is made of CdZnSe; the second barrier layer is made of InGaN and the second well layer is made of GaN, or the second barrier layer is made of CaSSe and the second well layer is made of CaSe, or the second barrier layer is made of CdMgZnSe and the second well layer is made of CdZnSe.

[0017] Optionally, the first barrier layer and the second barrier layer contain indium, and the concentration of indium in the first barrier layer is different from the concentration of indium in the second barrier layer.

[0018] Optionally, the thickness of the first barrier layer is 10 nm to 30 nm, and the thickness of the first well layer is 2 nm to 5 nm; the thickness of the second barrier layer is 10 nm to 30 nm, and the thickness of the second well layer is 2 nm to 5 nm.

[0019] Optionally, in a direction from close to the color conversion layer to far away from the color conversion layer, the light-emitting unit includes a first doping layer, a multi-quantum well layer and a second doping layer stacked in sequence.

[0020] Optionally, the light-emitting device further includes a first transflective layer, which is located on the side of the color conversion layer away from the light-emitting layer. The first transflective layer is used to transmit the light emitted by the light-emitting unit after being converted by the color conversion layer, and reflect the light emitted by the light-emitting unit.

[0021] Optionally, the light-emitting device further includes a second transflective layer, which is located between the light-emitting layer and the color conversion layer, and covers the side wall of each of the light-emitting units. The second transflective layer is used to reflect the light emitted by the light-emitting unit after being converted by the color conversion layer, and transmit the light emitted by the light-emitting unit.

[0022] Optionally, the light-emitting device further includes a silicon-based driving backplane, which is located on a side of the light-emitting layer away from the color conversion layer and is connected to the light-emitting layer.

[0023] On the other hand, a method for manufacturing a light-emitting device is provided, the method comprising: providing a light-emitting layer; manufacturing a color conversion layer on a first surface of the light-emitting layer; wherein the light-emitting layer comprises at least one light-emitting unit, the color conversion layer is located on the first surface of the light-emitting layer, and the color conversion layer comprises a multi-quantum well and is made of an inorganic material.

[0024] On the other hand, a display panel is provided, comprising a substrate and a plurality of light-emitting devices arranged in an array on one side of the substrate, wherein the light-emitting device is any one of the aforementioned light-emitting devices.

[0025] On the other hand, a display device is provided, which includes any one of the aforementioned light-emitting devices and a power supply circuit, and the power supply circuit is used to supply power to the light-emitting device; or, the display device includes the aforementioned display panel and a power supply circuit, and the power supply circuit is used to supply power to the display panel.

[0026] The technical solution provided by the present disclosure has at least the following beneficial effects: by using multiple quantum wells to make the color conversion layer and the color conversion layer is made of inorganic material, the problems of temperature instability and poor reliability of the color conversion layer made of organic material can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0028] FIG1 is a schematic cross-sectional view of a light emitting device provided by an embodiment of the present disclosure;

[0029] FIG2 is a schematic diagram of a planar structure of a light emitting device provided by an embodiment of the present disclosure;

[0030] FIG3 is a schematic diagram of the cross-sectional structure of the first color conversion layer and the second color conversion layer provided by an embodiment of the present disclosure;

[0031] FIG4 is a schematic diagram of a partial cross-sectional structure of a light emitting device provided by an embodiment of the present disclosure;

[0032] FIG5 is a schematic top view of a structure of a raised electrode and a conductive layer provided by an embodiment of the present disclosure;

[0033] FIG6 is a schematic diagram of a cross-sectional structure of a driving backplane provided in an embodiment of the present disclosure;

[0034] FIG7 is a schematic cross-sectional view of another light emitting device provided in an embodiment of the present disclosure;

[0035] FIG8 is a schematic diagram of a planar structure of another light emitting device provided in an embodiment of the present disclosure;

[0036] 9 to 11 are schematic cross-sectional views of another light-emitting device provided by an embodiment of the present disclosure;

[0037] FIG12 is a schematic top view of another structure of a raised electrode and a conductive layer provided in an embodiment of the present disclosure;

[0038] FIG13 is a schematic plan view of another light emitting device provided in an embodiment of the present disclosure;

[0039] FIG14 is a schematic cross-sectional view of another light emitting device provided in an embodiment of the present disclosure;

[0040] FIG15 is a schematic cross-sectional view of another light emitting device provided in an embodiment of the present disclosure;

[0041] FIG16 is a schematic cross-sectional view of another light emitting device provided in an embodiment of the present disclosure;

[0042] FIG17 is a schematic flow chart of a method for manufacturing a light-emitting device according to an embodiment of the present disclosure;

[0043] FIG18 is a schematic flow chart of another method for manufacturing a light-emitting device according to an embodiment of the present disclosure;

[0044] FIG19 is a schematic flow chart of another method for manufacturing a light-emitting device according to an embodiment of the present disclosure;

[0045] FIG20 is the first part of a flow chart of another method for manufacturing a light-emitting unit provided by an embodiment of the present disclosure;

[0046] FIG21 is the second part of a flow chart of another method for manufacturing a light-emitting unit provided in an embodiment of the present disclosure.

[0047] Legend: 1. Silicon-based driving backplane 101, base substrate 102, light shielding layer 103, first gate layer 104, second gate layer 105, third gate layer 106, first source-drain layer 107, second source-drain layer 108, first semiconductor layer 109, second semiconductor layer 110, buffer layer 111, first gate insulating layer 112, first insulating layer 113, second gate insulating layer 114, third gate insulating layer 115, interlayer dielectric layer 116, passivation layer 117, first planarization layer 118, second planarization layer 2, light-emitting unit A, first surface 2a, first light-emitting unit 2b, second light-emitting unit Element 2c, third light-emitting unit 201, first pin 202, second pin 21, first doped layer 22, multi-quantum well layer 23, second doped layer 24, buffer layer 25, padding electrode 26, conductive layer 27, insulating layer 27a, first via 27b, second via 28, substrate 291, bonding structure 292, debonding layer 293, temporary carrier 3, color conversion layer 31, first color conversion layer 32, second color conversion layer 33, third color conversion layer 41, first adhesive layer 42, second adhesive layer 43, third adhesive layer 44, fourth adhesive layer 5, retaining wall 61, first transflective layer 62, second transflective layer DETAILED DESCRIPTION

[0048] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present application will be further described in detail below with reference to the accompanying drawings.

[0049] The terms used in the embodiments of the present disclosure are only used to explain the embodiments of the present disclosure and are not intended to limit the present disclosure. Unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present disclosure should be the ordinary meanings understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second", "third" and similar words used in the patent application specification and claims of this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, similar words such as "one" or "a" do not indicate a quantitative limitation, but rather indicate the presence of at least one. Similar words such as "include" or "comprise" mean that the elements or objects appearing before "include" or "comprise" cover the elements or objects listed after "include" or "comprise" and their equivalents, and do not exclude other elements or objects. The directional terms mentioned in the present disclosure, such as "top", "bottom", "up", "down", "left" or "right", etc., are only used to refer to the directions of the drawings. Therefore, the directional terms used are for better and clearer explanation and understanding of the embodiments of the present disclosure, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present disclosure.

[0050] Figure 1 is a schematic diagram of the cross-sectional structure of a light-emitting device provided in an embodiment of the present disclosure. The light-emitting device includes a light-emitting layer and a color conversion layer 3. The light-emitting layer may include a plurality of light-emitting units 2, and the color conversion layer 3 is located on the first surface A of the light-emitting layer. The color conversion layer 3 includes a multi-quantum well and is made of an inorganic material. In the related art, the color conversion layer includes a plurality of quantum dot color conversion units and is made of an organic material. Therefore, the color conversion layer has problems such as poor temperature resistance and poor reliability. In the embodiment of the present disclosure, by using a multi-quantum well to make the color conversion layer and the color conversion layer is an inorganic material, the temperature resistance is better and the reliability is better.

[0051] In addition, since in the related art, the thickness of the color conversion layer including multiple quantum dot color conversion units is relatively thick, about 3 to 10 μm, and in the embodiment of the present disclosure, the thickness of the color conversion layer of the inorganic multi-quantum well is relatively thin, which can be less than 1 μm, therefore, the color conversion layer of the inorganic multi-quantum well in the embodiment of the present disclosure is also conducive to the lightweight and thinning of the product.

[0052] For example, as shown in FIG1 , the color conversion layer 3 includes a first color conversion layer 31 and a second color conversion layer 32 stacked sequentially from closer to the light-emitting layer to further away from the light-emitting layer. The first color conversion layer 31 is used to convert the light emitted by the light-emitting unit 2 into light of a first color, and the second color conversion layer 32 is used to convert the light emitted by the light-emitting unit 2 into light of a second color. The plurality of light-emitting units 2 include a first light-emitting unit 2a, a second light-emitting unit 2b, and a third light-emitting unit 2c.

[0053] FIG. 2 is a schematic plan view of a light-emitting device provided by an embodiment of the present disclosure. As shown in FIG. 2, the orthographic projection of the first light-emitting unit 2a on the first surface A at least partially coincides with the orthographic projection of the first color conversion layer 31 on the first surface A, and the orthographic projection of the second light-emitting unit 2b on the first surface A at least partially coincides with the orthographic projection of the second color conversion layer 32 on the first surface A. Both the first color conversion layer 31 and the second color conversion layer 32 include multiple quantum wells and are made of inorganic materials.

[0054] In an embodiment of the present disclosure, considering the formation process of multiple quantum wells, the first color conversion layer 31 and the second color conversion layer 32 are disposed in different layers, so that the entire layer of the first multiple quantum wells corresponding to the first color conversion layer 31 and the entire layer of the second multiple quantum wells corresponding to the second color conversion layer 32 can be prepared separately first, avoiding lattice mismatch, and then the entire layer of the first multiple quantum wells and the entire layer of the second multiple quantum wells are fixed on the first surface A by means of, for example, attachment, and the first color conversion layer 31 and the second color conversion layer 32 are formed by etching respectively. The color conversion layer in the embodiment of the present disclosure can be formed by etching. Since the accuracy of the etching process is high, high-resolution display can be achieved.

[0055] Optionally, the first color is red and the second color is green.

[0056] Optionally, each light-emitting unit 2 is configured to emit blue light. By cooperating with different color conversion layers, such as the first color conversion layer 31 and the second color conversion layer 32, color display can be achieved.

[0057] Optionally, as shown in FIG. 1, in the light-emitting device, the light emitted by the plurality of light-emitting units 2 is blue. The blue light emitted by some light-emitting units 2, such as the first light-emitting unit 2a, passes through the first color conversion layer 31, and the blue light emitted by some light-emitting units 2, such as the second light-emitting unit 2b, passes through the second color conversion layer 32. There is also a part of the light-emitting units, such as the third light-emitting unit 23, whose emitted light does not pass through the color conversion layer, so it remains blue after being emitted.

[0058] Optionally, as shown in FIG. 1, the three light-emitting units 2 are arranged in one direction. In other possible ways, the three light-emitting units 2 can also be arranged in a "pin" shape.

[0059] Optionally, the orthographic projection areas of the first light-emitting unit 2a, the second light-emitting unit 2b, and the third light-emitting unit 2c on the first surface A can be different, so as to facilitate the control of the light output of different colors.

[0060] As shown in Figure 1 , the light-emitting device further includes a first adhesive layer 41 and a second adhesive layer 42. The first adhesive layer 41 is positioned between the plurality of light-emitting units 2 and the color conversion layer 3, while the second adhesive layer 42 is positioned between the first color conversion layer 31 and the second color conversion layer 32. Both the first adhesive layer 41 and the second adhesive layer 42 are made of transparent materials. The first adhesive layer 41 serves to bond the plurality of light-emitting units 2 to the first color conversion layer 31, while the second adhesive layer 42 serves to bond the first color conversion layer 31 and the second color conversion layer 32. Furthermore, since both the first adhesive layer 41 and the second adhesive layer 42 are made of transparent materials, they have minimal impact on light output.

[0061] Optionally, the surface of the first adhesive layer 41 in contact with the first color conversion layer 31 is planar, and the surface of the second adhesive layer 42 in contact with the second color conversion layer 32 is planar. Since the surface of the first adhesive layer 41 in contact with the first color conversion layer 31 is planar, the entire first multi-quantum well layer corresponding to the first color conversion layer 31 can be flatly attached to one side of the light-emitting unit 2, facilitating subsequent etching of the first color conversion layer 31. Since the surface of the second adhesive layer 42 in contact with the second color conversion layer 32 is planar, the entire second multi-quantum well layer corresponding to the second color conversion layer 32 can be flatly attached to one side of the light-emitting unit 2, facilitating subsequent etching of the second color conversion layer 32.

[0062] Optionally, the transmittance of the first adhesive layer 41 and the second adhesive layer 42 is relatively large, for example, greater than 95%.

[0063] Optionally, the first adhesive layer 41 and the second adhesive layer 42 are made of organic materials, such as BCB (benzocyclobutene), photoresist, polyimide, acrylic, polyacrylic acid, silicone, etc.; the first adhesive layer 41 and the second adhesive layer 42 can also be made of inorganic materials, such as silicon oxide, silicon nitride, aluminum oxide, etc.

[0064] For example, as shown in FIG1 , the light-emitting device further includes a driver backplane 1, which is located on a side of the light-emitting layer away from the color conversion layer 3 and is connected to the light-emitting layer. The driver backplane 1 can control the multiple light-emitting units 2 located on the driver backplane 1. In other possible embodiments, the light-emitting device may also not include the driver backplane 1.

[0065] Figure 3 is a schematic cross-sectional view of the first and second color conversion layers provided by an embodiment of the present disclosure. As shown in part (a) of Figure 3 , the first color conversion layer 31 comprises M stacked first repeating units, each comprising a first barrier layer a and a first well layer b stacked in a direction from near the first surface A to away from the first surface A. As shown in part (b) of Figure 3 , the second color conversion layer 32 comprises N stacked second repeating units, each comprising a second barrier layer c and a second well layer d stacked in a direction from near the first surface A to away from the first surface A. M and N are both positive integers, with 20 < M ≤ 70 and 20 < N ≤ 70. This ensures that the first and second color conversion layers 31 and 32 have good absorptivity and prevents excessive absorption by the first and second color conversion layers 31 and 32, which could affect light output, due to excessively large M and N. Optionally, M is 30, 40, 50, 60, or 70, and N is 30, 40, 50, 60, or 70.

[0066] Optionally, the first barrier layer a is made of InGaN and the first well layer b is made of GaN, or the first barrier layer a is made of CaSSe and the first well layer b is made of CaSe, or the first barrier layer a is made of CdMgZnSe and the first well layer b is made of CdZnSe. The second barrier layer c is made of InGaN and the second well layer d is made of GaN, or the second barrier layer c is made of CaSSe and the second well layer d is made of CaSe, or the second barrier layer c is made of CdMgZnSe and the second well layer d is made of CdZnSe. The multi-quantum well composed of barrier layers and well layers made of the above materials can convert the light emitted by the light-emitting unit into different colors, thereby realizing color display.

[0067] Optionally, the first barrier layer a and the second barrier layer c contain indium, and the concentration of indium in the first barrier layer a is different from the concentration of indium in the second barrier layer c. By regulating the concentration of indium in the first barrier layer a and the second barrier layer c, the first color conversion layer 31 and the second color conversion layer 32 can convert the light emitted by the light-emitting unit 2 into light of different colors, thereby achieving display.

[0068] Optionally, the thickness of the first barrier layer a is 10 nm to 30 nm, for example, 10 nm, 20 nm, or 30 nm, and the thickness of the first well layer b is 2 nm to 5 nm, for example, 2 nm, 3 nm, 4 nm, or 5 nm. The thickness of the second barrier layer c is 10 nm to 30 nm, for example, 10 nm, 20 nm, or 30 nm, and the thickness of the second well layer d is 2 nm to 5 nm, for example, 2 nm, 3 nm, 4 nm, or 5 nm. If the first barrier layer a or the second barrier layer c is too thick, it may affect the absorption rate of the first color conversion layer 31 or the second color conversion layer 312 of the light emitted by the light-emitting unit 2 (for example, blue light).

[0069] Optionally, as shown in part (a) of FIG. 3 in conjunction with FIG. 1 , the first color conversion layer 31 further includes a barrier layer e located on the side of the stacked M first repeating units close to the first surface A. As shown in part (b) of FIG. 3 in conjunction with FIG. 1 , the second color conversion layer 32 further includes a barrier layer f located on the side of the stacked N first repeating units close to the first surface A. Optionally, the thickness of the barrier layer e is greater than the thickness of the first barrier layer a. For example, when the thickness of the first barrier layer a is 10 nm, the thickness of the barrier layer e is 20 nm. The thickness of the barrier layer f is greater than the thickness of the second barrier layer c. For example, when the thickness of the second barrier layer c is 10 nm, the thickness of the barrier layer f is 20 nm. A thicker barrier layer e can better protect the first well layer b adjacent to the barrier layer e, and a thicker barrier layer f can better protect the second well layer d adjacent to the barrier layer f.

[0070] For example, as shown in FIG1 , the light-emitting device further includes a first transflective layer 61, which is located on a side of the color conversion layer 3 away from the light-emitting layer. The first transflective layer 61 is configured to transmit light of the first color and light of the second color, and to reflect light emitted by the light-emitting unit 2. The provision of the first transflective layer 61 can improve the utilization efficiency of the color conversion layer 3 of the light emitted by the light-emitting unit 2.

[0071] Optionally, the first transflective layer 61 includes multiple first sublayers and multiple second sublayers, and the multiple first sublayers and the multiple second sublayers are alternately stacked, and the refractive index of the first sublayer is greater than the refractive index of the second sublayer; the first sublayer is made of silicon nitride, niobium pentoxide, or titanium dioxide, and the second sublayer is made of silicon oxide. The refractive index of the first sublayer made of silicon nitride, niobium oxide, or titanium dioxide is relatively high, approximately 1.7 or above; the refractive index of the second sublayer made of silicon oxide is relatively low, approximately 1.5 to 1.6. Optionally, this first transflective layer 61 formed by using two colloids of materials with different refractive indices is also called a Bragg reflector (DBR).

[0072] Optionally, as shown in Figure 1, the first reflective layer 61 is stepped at the side wall of the second color conversion layer 32, but the portion of the first reflective layer 61 corresponding to the light emitting area corresponding to each light emitting unit 2 is flat, so this design does not affect the light emitting unit.

[0073] In other possible embodiments, the entire first transflective layer 61 may be planar. Accordingly, the light-emitting device also includes a fourth adhesive layer between the first transflective layer 61 and the second color conversion layer 32 to fill the area below the planar first transflective layer 61 where no color conversion layer is present.

[0074] For example, as shown in FIG1 , the light-emitting device further includes a second transflective layer 62, which is positioned between the plurality of light-emitting units 2 and the color conversion layer 3. The second transflective layer 62 is configured to reflect light of the first color and light of the second color, and transmit light emitted by the light-emitting units 2. The provision of the second transflective layer 62 can improve the light emission efficiency of the light-emitting units 2 and prevent light converted by the color conversion layer 3 from leaking from one side of the light-emitting units 2, thereby improving the light emission efficiency of the light-emitting device.

[0075] Optionally, the second transflective layer 62 includes multiple third and fourth sublayers, which are alternately stacked. The refractive index of the third sublayer is greater than that of the fourth sublayer. The third sublayer is made of silicon nitride, niobium oxide, or titanium dioxide, and the fourth sublayer is made of silicon oxide. Optionally, the second transflective layer 62 is a Bragg reflector. The third sublayer made of silicon nitride, niobium oxide, or titanium dioxide has a relatively high refractive index, approximately 1.7 or above; the fourth sublayer made of silicon oxide has a relatively low refractive index, approximately 1.5 to 1.6. Optionally, this second transflective layer 62 formed using a colloid of two materials with different refractive indices is also called a Bragg reflector.

[0076] Optionally, the light emitting device may include both the first transflective layer 61 and the second transflective layer 62 as shown in FIG. 1 ; or may include only the first transflective layer 61 or the second transflective layer 62 .

[0077] 1 , the light emitting device further includes a retaining wall structure 5. Referring to FIG1 and FIG2 , the retaining wall structure 5 is located between different light emitting units 2 and color conversion layers corresponding to different colors to separate lights of different colors and prevent problems such as optical crosstalk.

[0078] Optionally, the retaining wall structure 5 is made of a black matrix material, such as carbon black and resin material. The retaining wall structure 5 can absorb the light emitted by the light-emitting unit 2 to the adjacent light-emitting unit 2 or the adjacent color conversion layer, and can play a role in preventing light crosstalk; or the retaining wall structure 5 is made of a metal material such as copper, which can not only play a role in preventing light crosstalk, but also can reflect the light incident on the retaining wall structure 5 back to the area above the corresponding light-emitting unit 2, such as the corresponding color conversion layer or the transparent adhesive layer, which is beneficial to improve the light output rate.

[0079] Figure 4 is a schematic partial cross-sectional view of a light-emitting device according to an embodiment of the present disclosure, and also illustrates the cross-sectional view of a driver backplane and a light-emitting unit in the light-emitting device shown in Figure 1. As shown in Figure 4, each light-emitting unit includes a first pin 201 and a second pin 202, with the first pin 201 and the second pin 202 located on the side of the light-emitting unit 2 away from the color conversion layer 3. The light-emitting unit 2 can be electrically connected to a driver circuit, such as in a silicon-based driver backplane, via the first pin 201 and the second pin 202.

[0080] Optionally, a pair of pins includes a first pin 201 and a second pin 202 , and the number of the light-emitting units 2 in the light-emitting device is the same as the number of pairs of pins.

[0081] Optionally, in a light-emitting device, there are three light-emitting units in total, each light-emitting unit has a pair of pins, and each light-emitting unit 2 is electrically connected to the driving backplane through the pair of pins.

[0082] For example, the light-emitting units in the embodiments shown in Figures 1 and 4 are micro light-emitting units. In other possible embodiments, the light-emitting units may also be mini light-emitting units or light-emitting units of other sizes.

[0083] The following is an exemplary description of the structure of the light-emitting unit according to the embodiment shown in Figures 1 and 4. As shown in Figure 4, the light-emitting unit 2 includes a first doped layer 21, a multi-quantum well layer 22, and a second doped layer 23 stacked in the direction from the color conversion layer 3 to the color conversion layer 3. The first doped layer 21 is electrically connected to the first pin 201, and the second doped layer 23 is electrically connected to the second pin 202.

[0084] Optionally, the first doped layer 21 may be an N-type doped layer, and the second doped layer 23 may be a P-type doped layer. Accordingly, the raised electrode 25 may be referred to as an N-type electrode, the first pin 201 may be referred to as an N-Pad (pad), and the second pin 202 may be referred to as a P-Pad.

[0085] Optionally, the material of the first doping layer 21 may be N-type gallium nitride (GaN), and the first doping layer 21 is denoted as N-GaN. The material of the second doping layer 23 may be P-type gallium nitride (GaN), and the second doping layer 23 is denoted as P-GaN.

[0086] Optionally, the thickness of the first doping layer 21 is about 2 μm, the thickness of the second doping layer 23 is about 0.2 μm, and the thickness of the multi-quantum well layer 22 is about 0.05 μm.

[0087] Optionally, as shown in Figure 4 , the light-emitting unit 2 further includes a buffer layer 24. The buffer layer 24 is located on the side of the light-emitting unit 2 proximal to the color conversion layer 3. The buffer layer 24 may be made of GaN. Optionally, the buffer layer 24 has a thickness of approximately 2 μm. In other possible embodiments, the light-emitting unit 2 may have a thinner buffer layer 24 or even no buffer layer 24. Thinning or removing the buffer layer 24 facilitates a lighter and thinner product.

[0088] For example, in conjunction with Figures 1 and 4 , the light-emitting unit 2 further includes a raised electrode 25, a conductive layer 26, and an insulating layer 27. The raised electrode 25 is connected to the first doped layer 21, the conductive layer 26 is located on the side of the second doped layer 23 away from the color conversion layer 3, and the insulating layer 27 is located on the side of the raised electrode 25 and the conductive layer 26 away from the backplane 1. The insulating layer 27 has a first via 27a and a second via 27b. The first via 27a is used to expose the raised electrode 25, and the raised electrode 25 is connected to the first electrode 1011 through the first via 27a. The second via 27b is used to expose the conductive layer 26, and the conductive layer 26 is connected to the second pin 202 through the second via 27b.

[0089] Optionally, the material of the conductive layer 26 may be indium tin oxide (ITO); the insulating layer 27 may be a passivation layer (PVX), and the material of the insulating layer 27 may be silicon oxide or silicon nitride.

[0090] Optionally, the thickness of the conductive layer 26 is 100 nm to 140 nm, for example, 100 nm, 110 nm, 120 nm, 130 nm, or 140 nm.

[0091] Optionally, the thickness of the insulating layer 27 is 500 nm to 1000 nm, for example, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, or 1000 nm.

[0092] Optionally, the pad electrode 25 includes a plurality of metal layers stacked in sequence, such as titanium, aluminum, nickel, and gold stacked in sequence; or cadmium, platinum, and gold stacked in sequence.

[0093] Optionally, the first pin 201 or the second pin 202 includes a plurality of metal layers stacked in sequence, for example, titanium, aluminum, nickel, and gold stacked in sequence; or cadmium, platinum, and gold stacked in sequence.

[0094] Figure 5 is a schematic top view of a structure of a raised electrode and a conductive layer according to an embodiment of the present disclosure. As shown in Figure 5 , in each light-emitting unit 2, the orthographic projection of the raised electrode 25 on the first surface A and the orthographic projection of the conductive layer 26 on the first surface A are both rectangular. Alternatively, the orthographic projection of the raised electrode 25 on the first surface A and the orthographic projection of the conductive layer 26 on the first surface A may also be other shapes, such as a circle, which is not limited by the present disclosure.

[0095] Optionally, in conjunction with Figures 4 and 5 , the area of ​​the orthographic projection of the raised electrode 25 on the first surface A of the driver backplane 1 is larger than the area of ​​the orthographic projection of the first via 27a on the first surface A, and the area of ​​the orthographic projection of the first pin 201 on the first surface A is larger than the area of ​​the orthographic projection of the first via 27a on the first surface A, to ensure that the raised electrode 25 can be stably connected to the first pin 201. The area of ​​the orthographic projection of the conductive layer 26 on the first surface A is larger than the area of ​​the orthographic projection of the second via 27b on the first surface A, and the area of ​​the orthographic projection of the second pin 202 on the first surface A is larger than the area of ​​the orthographic projection of the second via 27b on the first surface A, to ensure that the raised electrode 25 can be stably connected to the first pin 201.

[0096] Optionally, as shown in Figure 1, the area of ​​the orthographic projection of the raised electrode 25 on the first surface A is smaller than the area of ​​the orthographic projection of the first pin 201 on the first surface A, and the area of ​​the orthographic projection of the conductive layer 26 on the first surface A is smaller than the area of ​​the orthographic projection of the second pin 202 on the first surface A.

[0097] Optionally, the area of ​​the orthographic projection of the raised electrode 25 on the first surface A may be larger than the area of ​​the orthographic projection of the first pin 201 on the first surface A, and the area of ​​the orthographic projection of the conductive layer 26 on the first surface A may be larger than the area of ​​the orthographic projection of the second pin 202 on the first surface A.

[0098] For example, as shown in Figure 1, the driver backplane 1 is a silicon-based driver backplane. The trace width in the silicon-based driver backplane is relatively thin, so the light-emitting device made with the silicon-based driver backplane has a higher PPI (Pixels Per Inch, pixel density).

[0099] Illustratively, other driving backplanes may be used instead of the silicon-based driving backplane 1 , such as a glass-based driving backplane, including an LTPO (Low-temperature Polycrystalline oxide) backplane and an LTPS (Low Temperature Poly-Silicon) backplane.

[0100] Figure 6 is a schematic diagram of the cross-sectional structure of a driver backplane provided in an embodiment of the present disclosure. As shown in Figure 6, the glass-based driver backplane can be an LTPO backplane. The following is an exemplary description of the various layers of the LTPO backplane in the embodiment shown in Figure 6.

[0101] Exemplarily, as shown in Figure 6, the driving backplane includes a light-shielding layer 102, a buffer layer 110, a first semiconductor layer 108, a first gate insulating layer 111, a first gate layer 103, a first insulating layer 112, a second gate layer 104, a second gate insulating layer 113, a second semiconductor layer 109, a third gate insulating layer 114, a third gate layer 105, an interlayer dielectric layer 115, a passivation layer 116, a first source and drain layer 106, a first planarization layer 117, a second source and drain layer 107 and a second planarization layer 118 stacked in sequence on a base substrate 101.

[0102] Exemplarily, the base substrate 101 can be any transparent substrate, such as a glass substrate, a quartz substrate, a plastic substrate, other transparent hard substrates, or other transparent flexible substrates, and can be a single-layer or multi-layer structure. Taking a multi-layer structure as an example, the base substrate 101 includes a first PI (polyimide) layer, a first protective layer, a second PI (polyimide) layer, and a second protective layer stacked from bottom to top. The two protective layers are used to protect the PI layer and prevent damage to the PI layer by subsequent processes. The second protective layer is also covered with a buffer layer to block water oxygen and block alkaline ions.

[0103] For example, the light shielding layer 102 can be made of a metal material, including but not limited to molybdenum, aluminum, titanium, copper, etc. The light shielding layer 102 can reduce the amount of light that the thin film transistor (TFT) receives while also being conductive. The light shielding layer 102 can also be referred to as a BSM (bottom shield metal) layer.

[0104] Illustratively, the first semiconductor layer 108 is made of low-temperature polysilicon material, and the second semiconductor layer 109 is made of metal oxide semiconductor materials such as IGZO (Indium Gallium Zinc Oxide).

[0105] Exemplarily, the materials of the first gate insulating layer 111 , the first insulating layer 112 , the second gate insulating layer 113 , the third gate insulating layer 114 and the interlayer dielectric layer 115 may be silicon oxide, silicon nitride, silicon oxynitride or the like.

[0106] Exemplarily, the first gate layer 103 , the second gate layer 104 and the third gate layer 105 are made of metal materials, such as one or more of molybdenum, copper, aluminum and titanium.

[0107] For example, the passivation layer 116 may be made of a silicon oxide layer, a silicon nitride layer, or a silicon oxide layer.

[0108] Exemplarily, the first planarization layer 117 and the second planarization layer 118 are made of organic insulating materials, such as resin.

[0109] In other possible embodiments, the driver backplane may also be an LTPS (Low Temperature Poly-Silicon) backplane. For an LTPS backplane, the driver backplane includes a sequentially stacked substrate, a first gate layer, a first gate insulation layer, a first semiconductor layer, a second gate insulation layer, a second gate layer, an interlayer dielectric layer, a passivation layer, a first source and drain layer, and a first planarization layer. The materials used to make each layer are the same as those used for the LTPO backplane, and will not be further described here.

[0110] In another possible implementation, each light-emitting unit 2 is configured to emit ultraviolet light. After passing through the color conversion layers of different multi-quantum wells, the ultraviolet light can be converted into light of different colors, such as a first color, a second color, and a third color. Furthermore, because the color conversion layers of the multi-quantum wells absorb ultraviolet light more strongly than blue light, configuring the light-emitting units 2 to emit ultraviolet light also helps improve light efficiency.

[0111] Figure 7 is a schematic cross-sectional view of another light-emitting device provided by an embodiment of the present disclosure. Compared to the embodiment shown in Figure 1, in the embodiment shown in Figure 7, the color conversion layer 3 further includes a third color conversion layer 33. The third color conversion layer 33 is located on the side of the first color conversion layer 31 away from the second color conversion layer 32. The third color conversion layer 33 is used to convert the light emitted by the light-emitting unit 2 into light of a third color. The orthographic projection of the third color conversion layer 33 on the first surface A at least partially overlaps with the orthographic projection of the third light-emitting unit 2c on the first surface A. In the embodiment shown in Figure 7, the light emitted by the light-emitting unit 2 is ultraviolet light. Therefore, in order to achieve color display, the third color conversion layer 33 is also required to convert the light emitted by the third light-emitting unit 2c into a third color.

[0112] Optionally, in the embodiment shown in FIG7 , the light-emitting device further includes a third adhesive layer 43, which is positioned between the third color conversion layer 33 and the first color conversion layer 31. The first adhesive layer 41 is used to bond the plurality of light-emitting units 2 to the color conversion layer 3, that is, to bond the plurality of light-emitting units 2 to the third color conversion layer 33. The second adhesive layer 42 is used to bond the first color conversion layer 31 to the second color conversion layer 32. The third adhesive layer 43 is used to bond the third color conversion layer 33 to the first color conversion layer 31.

[0113] FIG. 8 is a schematic plan view of another light-emitting device provided by an embodiment of the present disclosure, FIGS. 9 to 11 are schematic cross-sectional views of another light-emitting device provided by an embodiment of the present disclosure, and FIGS. 9 to 11 are respectively cross-sectional views along the BB cross-section line, CC cross-section line, and DD cross-section line in FIG. 8. Compared with the embodiment shown in FIG. 1, in the embodiments shown in FIGS. 8 to 11, the light-emitting device includes adjacent first light-emitting unit 2a, second light-emitting unit 2b, and third light-emitting unit 2c. The first light-emitting unit 2a, the second light-emitting unit 2b, and the third light-emitting unit 2c are of an integrated structure and share a first lead 201. Here, in combination with FIG. 4, the fact that the first light-emitting unit 2a, the second light-emitting unit 2b, and the third light-emitting unit 2c are of an integrated structure means that the first light-emitting unit 2a, the second light-emitting unit 2b, and the third light-emitting unit 2c can share a part of the film layer structure (such as the buffer layer 24 and the first doping layer 21), so the first light-emitting unit 2a, the second light-emitting unit 2b, and the third light-emitting unit 2c can be fabricated into a connected integrated structure; and for the film layer structures that cannot be shared (such as the multiple quantum well layer 22 and the second doping layer 23, etc.), patterning treatment is performed to distinguish the first light-emitting unit 2a, the second light-emitting unit 2b, and the third light-emitting unit 2c. The design of the three light-emitting units sharing a first lead 201 is beneficial to reducing the size of the light-emitting device.

[0114] Optionally, the first doping layer 21 and the buffer layer 24 of the first light-emitting unit 2a, the second light-emitting unit 2b, and the third light-emitting unit 2c share one layer structure. Other structural layers in the light-emitting unit 2 refer to the foregoing content and will not be elaborated here.

[0115] Optionally, corresponding to one first lead 201 and three second leads 202 are one raised electrode 25 and three conductive layers 26 respectively.

[0116] Optionally, as shown in FIGS. 8 to 11, the light emitted by the light-emitting unit is blue light. The top view of the light-emitting device is in a cross shape. The upper left part in FIG. 8 corresponds to the first lead 201 and the raised electrode 25, and no light is emitted in this area; the upper right part in FIG. 8 corresponds to the second lead 202, but there is no color conversion layer, and the light emitted by the light-emitting unit 2 in this area, such as blue light, does not pass through the first color conversion layer 31 or the second color conversion layer 32. The lower left part in FIG. 8 corresponds to the second lead 202 and has the first color conversion layer 31. The light emitted by the first light-emitting unit 2a in this area is converted into light of a first color, such as red light, after passing through the first color conversion layer 31; the lower right part in FIG. 8 corresponds to the second lead 202 and has the second color conversion layer 32. The light emitted by the second light-emitting unit 2b in this area is converted into light of a second color, such as green light, after passing through the second color conversion layer 32.

[0117] Optionally, in the embodiments shown in Figures 8 to 11 , the light-emitting device further includes a fourth adhesive layer 44, which is used to fill in areas other than the raised third color conversion layer 33. The fourth adhesive layer 44 is made of a transparent material. Accordingly, in the embodiments shown in Figures 8 to 11 , the first transflective layer 61 is planar.

[0118] FIG12 is a schematic diagram of a top view of another structure of a raised electrode and a conductive layer provided in an embodiment of the present disclosure. As shown in parts (a) of FIG11 and FIG12, the orthographic projections of the raised electrode 25 and the conductive layer 26 on the first surface A can both be square; as shown in part (b) of FIG12, the raised electrode 25 can also include a main body, and a first extension portion and a second extension portion connected to the main body. Optionally, as shown in part (b) of FIG12, the first extension portion is located between the conductive layer 26 in the upper right corner and the conductive layer 26 in the lower right corner, and the second extension portion is located between the conductive layer 26 in the lower left corner and the conductive layer 26 in the lower right corner. Optionally, the orthographic projections of the main body, the first extension portion, and the second extension portion on the first surface A can both be square as shown in part (b) of FIG12, or can be other shapes, which are not limited by the present disclosure.

[0119] Optionally, as shown in part (b) of FIG12 , the orthographic projection of the elevated electrode 25 on the first surface A is larger than the orthographic projection of one conductive layer 26 on the first surface A. This design can maximize the orthographic projection area of ​​the elevated electrode 25 on the first surface A, thereby improving the current spreading capability.

[0120] In other possible embodiments, the orthographic projection area of ​​the raised electrode 25 on the first surface A is larger than the orthographic projection area of ​​the first pin 201 on the first surface A. Since the orthographic projection area and cross-sectional area of ​​the raised electrode 25 are larger, the internal resistance of the light-emitting device can be reduced, the voltage drop can be reduced, and the light output can be improved.

[0121] FIG. 13 is a schematic plan view of another light-emitting device provided by an embodiment of the present disclosure, FIG. 14 is a schematic cross-sectional view of another light-emitting device provided by an embodiment of the present disclosure, and parts (a) and (b) of FIG. 14 are schematic cross-sectional views along the EE cross-section line and the FF cross-section line in FIG. 13, respectively. Compared with the embodiments shown in FIGS. 8 to 11, in the embodiments shown in FIGS. 13 and 14, the light emitted by the light-emitting unit is ultraviolet light, and the color conversion layer 3 further includes a third color conversion layer 33. The top view of the light-emitting device is in a cross shape. The upper left part corresponds to the first lead 201 and the垫高 electrode 25, and no light is emitted in this area; the upper right part corresponds to the second lead 202, which has a third color conversion layer 33. In this area, the light emitted by the third light-emitting unit 2c, such as ultraviolet light, is converted into a third color, such as blue, after passing through the third color conversion layer 33; the lower left part corresponds to the second lead 202, which has a first color conversion layer 31. In this area, the light emitted by the first light-emitting unit 2a is converted into light of a first color, such as red light, after passing through the first color conversion layer 31; the lower right part corresponds to the second lead 202, which has a second color conversion layer �2. In this area, the light emitted by the second light-emitting unit 2b is converted into light of a second color, such as green light, after passing through the second color conversion layer 32. In this way, the light-emitting device can emit light of different colors in different areas, so as to realize the color display function.

[0122] FIG. 15 is a schematic cross-sectional view of another light-emitting device provided by an embodiment of the present disclosure. As shown in FIG. 15, the light-emitting device includes a plurality of light-emitting units 2 and a color conversion layer 3. The setting of the color conversion layer 3 can convert the light emitted by the plurality of light-emitting units 2 into other colors to achieve monochromatic display.

[0123] Optionally, in the embodiment shown in FIG. 15, the light-emitting device further includes a second transmissive / reflective layer 62, and the second transmissive / reflective layer 62 covers the side walls of the plurality of light-emitting units 2, so that as much light as possible emitted by the light-emitting units 2 can pass through the second transmissive / reflective layer 62. Here, in combination with FIG. 4, the second transmissive / reflective layer 62 covering the side walls of the plurality of light-emitting units 2 means that the second transmissive / reflective layer 62 covers all the side walls of the light-emitting units 2 except the side walls between the first lead 201 and the second lead 202.

[0124] FIG. 16 is a schematic cross-sectional view of another light-emitting device provided by an embodiment of the present disclosure. As shown in FIG. 16, the light-emitting device includes a light-emitting unit 2 and a color conversion layer 3. The setting of the color conversion layer 3 can convert the light emitted by the light-emitting unit 2 into other colors to achieve monochromatic display.

[0125] FIG. 17 is a schematic flowchart of a method for manufacturing a light-emitting device provided by an embodiment of the present disclosure. As shown in FIG. 17, the method includes:

[0126] In step S1, a light-emitting layer is provided;

[0127] In step S2, a color conversion layer is formed on the first surface of the light-emitting layer;

[0128] The light-emitting layer includes at least one light-emitting unit, the color conversion layer is located on the first surface of the light-emitting layer, and the color conversion layer includes a multi-quantum well and is made of an inorganic material.

[0129] FIG18 is a flow chart of another method for manufacturing a light-emitting device according to an embodiment of the present disclosure, which can be used to manufacture the light-emitting device shown in FIG1 . The method includes:

[0130] In the first step, as shown in part (a) of Figure 18 , a silicon-based driver backplane 1 is provided. A plurality of light-emitting units 2 are prepared on the silicon-based driver backplane 1, and the plurality of light-emitting units 2 are arrayed and distributed on one side of the silicon-based driver backplane 1. A second transflective layer 62 is prepared on the side of the plurality of light-emitting units 2 away from the silicon-based driver backplane 1, for example, by deposition. Alternatively, the plurality of light-emitting units 2 are prepared on the silicon-based driver backplane 1 by, for example, metal alignment bonding or die bonding, wherein die bonding includes solder paste or flux application and pick-and-place steps.

[0131] In the second step, as shown in part (b) of FIG. 18 , a first adhesive layer 41 is formed on the surface of the second transflective layer 62 by, for example, spin coating.

[0132] In the third step, as shown in part (c) of Figure 18, a sapphire substrate 301 having a buffer layer 302 on its surface is provided, and barrier layers and well layers are alternately stacked on the buffer layer 302 by, for example, deposition, to obtain a first multi-quantum well 310 of a whole layer. The first multi-quantum well 310 of a whole layer is attached to the surface of the first adhesive layer 41. Optionally, the thickness of the buffer layer 302 is about 3 μm. Optionally, attaching the first multi-quantum well 310 of a whole layer to the surface of the first adhesive layer 41 includes: achieving a bonding connection between the first multi-quantum well 310 and the plurality of light-emitting units 2 under a bonding pressure condition of 4000N to 15000N and a temperature condition below 300°C, wherein the bonding force between the first multi-quantum well 310 and the plurality of light-emitting units 2 after bonding is completed is greater than 0.05N.

[0133] In the fourth step, as shown in part (d) of Figure 18 , the sapphire substrate 301 is removed by, for example, laser lift-off (LLO), and the buffer layer 302 is thinned and removed by, for example, plasma etching. The first multi-quantum well 310 is then patterned to form a first color conversion layer 31, which is located above the first light-emitting unit 2a. Optionally, patterning the first multi-quantum well 310 includes plasma etching using a mixture of chlorine and iodine chloride. The plasma etching rate can also be controlled by adjusting the power.

[0134] In the fifth step, as shown in part (e) of FIG. 18 , a second adhesive layer 42 is formed on the surface of the first color conversion layer 31 away from the silicon-based driving backplane 1 by, for example, coating.

[0135] In the sixth step, as shown in part (f) of Figure 18 , a second multi-quantum well layer is attached to the surface of the second adhesive layer 42 in a manner similar to the third step. The second multi-quantum well layer is patterned to form a second color conversion layer 32, which is positioned above the second light-emitting unit 2b.

[0136] In the seventh step, as shown in part (g) of Figure 18 , multiple grooves are formed in the first adhesive layer 41 and the second adhesive layer 42 by processes such as photoresist coating, exposure, development, etching, and stripping. The multiple grooves are located between the first color conversion layer 31 and the second color conversion layer 32 and between two adjacent light-emitting units 2. Retaining walls 5 are formed in the multiple via holes by processes such as photoresist coating, exposure, development, deposition, and stripping.

[0137] In the eighth step, as shown in part (h) of FIG18 , a first transflective layer 61 is formed on the side of the retaining wall 5 and the second color conversion layer 32 away from the silicon-based driving backplane 1 by deposition, for example, to obtain the light-emitting device shown in FIG1 .

[0138] FIG19 is a flow chart of another method for manufacturing a light-emitting device according to an embodiment of the present disclosure. The method can be used to manufacture the light-emitting device shown in FIG7 . The method includes:

[0139] In the first step, as shown in part (a) of FIG19 , a silicon-based driving backplane 1 is provided. A plurality of light-emitting units 2 are prepared on the silicon-based driving backplane 1, and the plurality of light-emitting units 2 are arrayed and distributed on one side of the silicon-based driving backplane 1. A second transflective layer 62 is prepared on the side of the plurality of light-emitting units 2 away from the silicon-based driving backplane 1, for example, by deposition.

[0140] In the second step, as shown in FIG19(b), a first adhesive layer 41 is formed on the surface of the second transflective layer 62 by, for example, spin coating. A full layer of the third multi-quantum well is attached to the surface of the second adhesive layer 42 using a method similar to that shown in FIG18(c). The third multi-quantum well is patterned to form a third color conversion layer 33, which is located above the third light-emitting unit 2c.

[0141] In the third step, as shown in part (c) of Figure 19 , a third adhesive layer 43 is formed on the surface of the third color conversion layer 33 facing away from the silicon-based driver backplane 1, for example, by coating. A full layer of the first multi-quantum well is attached to the surface of the third adhesive layer 43 in a manner similar to that shown in part (c) of Figure 18 . The first multi-quantum well is patterned to form the first color conversion layer 31, which is located above the first light-emitting unit 2a.

[0142] In the fourth step, as shown in part (d) of Figure 19 , a second adhesive layer 42 is formed, for example, by coating, on the surface of the first color conversion layer 31 facing away from the silicon-based driver backplane 1. A second multi-quantum well layer is attached to the surface of the second adhesive layer 42 in a manner similar to that shown in part (c) of Figure 18 . The second multi-quantum well layer is patterned to form a second color conversion layer 32, which is located above the second light-emitting unit 2 b.

[0143] In the fifth step, as shown in part (e) of Figure 19, multiple grooves are formed in the first adhesive layer 41, the second adhesive layer 42, and the third adhesive layer 43 through processes such as photoresist coating, exposure, development, etching, and stripping. The multiple grooves extend between adjacent first color conversion layers 31, second color conversion layers 32, and third color conversion layers 33, and between two adjacent light-emitting units 2. Retaining walls 5 are formed in the multiple via holes through processes such as photoresist coating, exposure, development, deposition, and stripping.

[0144] In the sixth step, as shown in part (f) of FIG19 , a first transflective layer 61 is formed on the side of the retaining wall 5 and the second color conversion layer 32 away from the silicon-based driving backplane 1 by deposition, for example, to obtain the light-emitting device shown in FIG7 .

[0145] Figure 20 is the first part of a flow chart of another method for manufacturing a light-emitting unit provided by an embodiment of the present disclosure, and the light-emitting unit prepared in the method shown in Figure 20 is the light-emitting unit in the embodiments shown in Figures 8 to 11. In Figure 20, part (b) is a schematic diagram of the cross-sectional structure along the cross-sectional line shown in part (a), part (d) is a schematic diagram of the cross-sectional structure along the cross-sectional line shown in part (c), and part (f) is a schematic diagram of the cross-sectional structure along the cross-sectional line shown in part (e). Figure 21 is the second part of a flow chart of another method for manufacturing a light-emitting unit provided by an embodiment of the present disclosure. The method includes:

[0146] In the first step, as shown in parts (a) and (b) of Figure 20, a buffer layer 24, a first doped layer 21, a multi-quantum well layer 22, a second doped layer 23 and a conductive layer 26 are sequentially prepared on a substrate 28 (e.g., a sapphire substrate) by, for example, deposition. The multi-quantum well layer 22, the second doped layer 23 and the conductive layer 26 are patterned, and a portion of the first doped layer 21 is etched to obtain a conductive layer 26. The buffer layer 24 and the first doped layer 21 are deeply etched to separate the multiple light-emitting units into multiple groups, each group including multiple light-emitting units 2 in an integrated structure. A layer of raised electrode material is obtained on the surface of the conductive layer 26 by, for example, deposition, and the raised electrode material is patterned to obtain a raised electrode 25, and the raised electrode 25 is subjected to high-temperature annealing to form a good ohmic contact. Optionally, patterning the conductive layer 26 includes wet etching or dry etching the conductive layer 26. Optionally, the first doped layer 21 is partially etched by gas plasma etching. The plasma etching gas may be a mixture of chlorine and iodine chloride. Optionally, etching the portion of the first doped layer 21 means etching away the first doped layer 21 having a thickness of 0.8 μm to 0.9 μm in a portion of the region to ensure that the multi-quantum well layer 22 is completely etched in the portion of the region.

[0147] In the second step, as shown in parts (c) and (d) of Figure 20, an insulating layer 27 is formed by, for example, PECVD (plasma enhanced chemical vapor deposition), and a plurality of first vias 27a exposing the raised electrodes 25 and a plurality of second vias 27b exposing the conductive layer 26 are formed on the insulating layer 27 by processes such as photoresist coating, exposure, development, etching, and stripping.

[0148] In the third step, as shown in parts (e) and (f) of Figure 20 , a first lead 201 is formed in the first via 27a by deposition, for example, and a second lead 202 is formed in the second via 27b by deposition, for example. Etching is then performed, for example, using plasma etching to reach the substrate 28. Optionally, the etching depth in this step is approximately 4 μm to 5 μm. This results in a plurality of light-emitting units 2 having an integrated structure as shown in Figures 8 to 11 .

[0149] In the fourth step, as shown in part (a) of Figure 21 , an adhesive structure 291 is formed on the side of the plurality of light-emitting units 2 away from the substrate 28, for example, by coating. A debonding layer 292 and a temporary carrier 293 (e.g., sapphire or glass) are attached to the adhesive structure 291, for example, by attaching.

[0150] In the fifth step, as shown in part (b) of FIG. 21 , the substrate 28 is removed by, for example, laser lift-off.

[0151] In the sixth step, as shown in part (c) of FIG. 21 , a color conversion layer and a first transflective layer 61 are formed using the method shown in FIG. 19 or 20 .

[0152] In the seventh step, as shown in part (d) of Figure 21 , the temporary carrier 293 is removed, for example, by laser stripping. The debonding layer 292 and the adhesive structure 291 are removed, for example, by ashing. Multiple independent color conversion layers and multiple light-emitting units connected to the color conversion layers are then obtained, for example, by laser cutting. Optionally, the resulting color conversion layer and multiple light-emitting units connected to the color conversion layer are connected to a silicon-based driver backplane, resulting in the light-emitting device shown in Figures 8 to 11 .

[0153] For example, the light-emitting device shown in FIG15 can be manufactured using the following method: Similar to the manufacturing method shown in FIG18 or FIG19 , for example, in section (d) of FIG18 , after obtaining a full layer of first quantum well 310, multiple grooves are formed in the first quantum well 31 and the first adhesive layer 41 through processes such as photoresist coating, exposure, development, etching, and stripping. The multiple grooves are located between adjacent first color conversion layers 31 and extend between two adjacent light-emitting units 2. The subsequent method for preparing the first transflective layer 61 is the same as the manufacturing method shown in FIG18 or FIG19 . The light-emitting device shown in FIG15 can be obtained. Optionally, the first quantum well 310 can be replaced with a second quantum well or a third quantum well, resulting in a light-emitting device including a second color conversion layer or a third color conversion layer.

[0154] For example, the light-emitting device shown in FIG15 can be manufactured using the following method: Similar to the manufacturing method shown in FIG20 and FIG21, if the light-emitting unit 2 manufactured has only one conductive layer 26, then each light-emitting unit 2 is connected to only one first pin 201 and one second pin 202, and multiple light-emitting units 2 do not share the first pin 201; and in part (c) of FIG21, only one of the first color conversion layer, the second color conversion layer, or the third color conversion layer is manufactured, and the color conversion layer covers all light-emitting units 2; and in part (d) of FIG21, when multiple independent color conversion layers and multiple light-emitting units connected to the color conversion layers are obtained by etching, for example, the multiple light-emitting units 2 connected to the color conversion layer are not integrated. Optionally, the obtained color conversion layer and the multiple light-emitting units connected to the color conversion layer are connected to a silicon-based driver backplane to obtain a light-emitting device as shown in FIG15.

[0155] Illustratively, the light-emitting device shown in FIG16 can be manufactured in the following manner: similar to the manufacturing method process shown in FIG20 and FIG21 , the manufactured light-emitting unit 2 has only one conductive layer 26, and correspondingly, one light-emitting unit 2 is connected to only one first pin 201 and one second pin 202; and only one of the first color conversion layer, the second color conversion layer, or the third color conversion layer is manufactured, and the color conversion layer covers all the light-emitting units 2; and multiple independent color conversion layers and a light-emitting unit connected to the color conversion layer are obtained by, for example, etching.

[0156] Optionally, the patterning process includes processes such as photoresist coating, exposure, development, etching, and stripping.

[0157] An embodiment of the present disclosure further provides a display panel, which includes a substrate and a plurality of light-emitting devices arranged in an array on one side of the substrate, wherein the light-emitting device is any of the aforementioned light-emitting devices.

[0158] Illustratively, the light-emitting device provided in the embodiments of the present disclosure is a lighting device, such as a backlight source, a desk lamp, a ceiling lamp, a wall lamp, a flashlight, or any other product or component with a lighting function.

[0159] An embodiment of the present disclosure further provides a display device, which includes any of the aforementioned light-emitting devices and a power supply circuit, the power supply circuit being used to supply power to the light-emitting device; or, the display device includes the aforementioned display panel and a power supply circuit, the power supply circuit being used to supply power to the display panel.

[0160] Illustratively, the display device provided in the embodiments of the present disclosure may be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, or a navigator.

[0161] The display device has the same effects as the aforementioned display panel, which will not be described in detail here.

[0162] The above are merely optional embodiments of the present disclosure and are not intended to limit the present disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the scope of protection of the present disclosure.

Claims

1. A light emitting device, characterized in that: The light-emitting device comprises a light-emitting layer and a color conversion layer, the light-emitting layer comprises at least one light-emitting unit, and the color conversion layer is located on a first surface of the light-emitting layer; The color conversion layer includes multiple quantum wells and is made of inorganic materials.

2. The light emitting device according to claim 1, characterized in that: The at least one light-emitting unit includes a first light-emitting unit, a second light-emitting unit and a third light-emitting unit, and the color conversion layer includes a first color conversion layer and a second color conversion layer sequentially stacked in a direction from close to the light-emitting layer to far away from the light-emitting layer; The orthographic projection of the first color conversion layer on the first surface at least partially overlaps with the orthographic projection of the first light-emitting unit on the first surface, and the first color conversion layer is used to convert the light emitted by the first light-emitting unit into light of a first color; The orthographic projection of the second color conversion layer on the first surface at least partially overlaps with the orthographic projection of the second light emitting unit on the first surface, and the second color conversion layer is used to convert the light emitted by the second light emitting unit into light of a second color.

3. The light emitting device according to claim 2, characterized in that: The light emitting device further comprises a first adhesive layer and a second adhesive layer, wherein the first adhesive layer is located between the light emitting layer and the color conversion layer, and the second adhesive layer is located between the first color conversion layer and the second color conversion layer, and both the first adhesive layer and the second adhesive layer are made of transparent materials.

4. The light emitting device according to claim 3, characterized in that: Each of the light emitting units is used for emitting blue light.

5. The light emitting device according to claim 3, characterized in that: The color conversion layer further includes a third color conversion layer, and the third color conversion layer is located on a side of the first color conversion layer away from the second color conversion layer; The third color conversion layer is used to convert the light emitted by the third light emitting unit into light of a third color, and the orthographic projection of the third color conversion layer on the first surface is the same as the orthographic projection of the third light emitting unit on the first surface. The orthographic projections on the surfaces at least partially coincide.

6. The light emitting device according to claim 5, characterized in that: Each of the light emitting units is used to emit ultraviolet light.

7. The light emitting device according to any one of claims 2 to 6, characterized in that: Each of the light-emitting units includes a first pin and a second pin, and the first pin and the second pin are located on a side of the light-emitting unit away from the color conversion layer.

8. The light emitting device according to claim 7, characterized in that: The adjacent first light emitting unit, the second light emitting unit and the third light emitting unit are an integrated structure and share one first pin.

9. The light emitting device according to any one of claims 2 to 6 and claim 8, characterized in that: The first color conversion layer includes M stacked first repeating units, wherein the first repeating unit includes a first barrier layer and a first well layer stacked in a direction from close to the first surface to far away from the first surface; The second color conversion layer includes N stacked second repeating units, wherein the second repeating unit includes a second barrier layer and a second well layer stacked in a direction from close to the first surface to far away from the first surface; Both M and N are positive integers, 20<M≤70, 20<N≤70.

10. The light emitting device according to claim 9, characterized in that: The first barrier layer is made of InGaN and the first well layer is made of GaN, or the first barrier layer is made of CaSSe and the first well layer is made of CaSe, or the first barrier layer is made of CdMgZnSe and the first well layer is made of CdZnSe; The second barrier layer is made of InGaN and the second well layer is made of GaN, or the second barrier layer is made of CaSSe and the second well layer is made of CaSe, or the second barrier layer is made of CdMgZnSe and the second well layer is made of CdZnSe.

11. The light emitting device according to claim 10, characterized in that: The first barrier layer and the second barrier layer contain indium, and the concentration of indium in the first barrier layer is different from the concentration of indium in the second barrier layer.

12. The light emitting device according to claim 10 or 11, characterized in that: The thickness of the first barrier layer is 10 nm to 30 nm, and the thickness of the first well layer is 2 nm to 5 nm; the thickness of the second barrier layer is 10 nm to 30 nm, and the thickness of the second well layer is 2 nm to 5 nm.

13. The light emitting device according to any one of claims 1 to 6, claim 8 and claims 10 to 11, characterized in that: In a direction from close to the color conversion layer to far away from the color conversion layer, the light emitting unit includes a first doping layer, a multi-quantum well layer and a second doping layer stacked in sequence.

14. The light emitting device according to claim 13, characterized in that: The light-emitting device also includes a first transflective layer, which is located on a side of the color conversion layer away from the light-emitting layer. The first transflective layer is used to transmit light emitted by the light-emitting unit after being converted by the color conversion layer, and reflect light emitted by the light-emitting unit.

15. The light emitting device according to claim 13, characterized in that: The light-emitting device also includes a second reflective layer, which is located between the light-emitting layer and the color conversion layer, and covers the side wall of each of the light-emitting units. The second reflective layer is used to reflect the light emitted by the light-emitting unit after being converted by the color conversion layer, and transmit the light emitted by the light-emitting unit.

16. The light emitting device according to any one of claims 1 to 6, 8, 10 to 11 and 14 to 15, characterized in that: The light-emitting device further comprises a silicon-based driving backplane, which is located at a side of the light-emitting layer away from the color conversion layer and connected to the light-emitting layer.

17. A method for manufacturing a light emitting device, characterized in that: The method comprises: providing a light emitting layer; Making a color conversion layer on the first surface of the light-emitting layer; The light-emitting layer includes at least one light-emitting unit, and the color conversion layer is located in the light-emitting layer. The color conversion layer comprises a multi-quantum well and is made of an inorganic material.

18. A display panel, characterized in that: The display panel includes a substrate and a plurality of light emitting devices arranged in an array on one side of the substrate, wherein the light emitting device is the light emitting device according to any one of claims 1 to 16.

19. A display device, characterized in that: The display device comprises a light emitting device and a power supply circuit as claimed in any one of claims 1 to 16, wherein the power supply circuit is used to supply power to the light emitting device; or The display device comprises the display panel as claimed in claim 18 and a power supply circuit, wherein the power supply circuit is used to supply power to the display panel.

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