Organic light emitting display device and method of manufacturing same

Abstract

The invention discloses an organic light emitting display device and a method of manufacturing the same. The manufacturing method comprises the steps that a substrate is provided, and the substrate comprises a plurality of pixel areas which are arranged at intervals; forming an anode in the pixel region; passivating the side wall of the anode to form a passivation layer on the side wall of the anode; forming a first insulating layer between the anodes; and forming a partition structure on the first insulating layer, wherein the partition structure is located between the pixel regions. According to the organic light-emitting display device and the manufacturing method thereof provided by the embodiment of the invention, the passivation layer is formed on the side wall of the anode to avoid direct contact between the side wall of the anode and the organic light-emitting layer, so that current is prevented from leaking to the organic light-emitting layer from the side wall of the anode, the transverse leakage risk is reduced, and the display effect is improved; and the current required by normal light emitting of the pixel can be ensured, and the accuracy of pixel brightness control can be improved.

Description

Technical Field

[0001] The present invention relates to the field of display technologies, and in particular, to an organic light-emitting display device and a manufacturing method thereof. Background Art

[0002] A silicon-based organic light-emitting diode (OLED) is a micro display device manufactured based on a complementary metal-oxide-semiconductor (CMOS) backplane technology on a silicon wafer, and has advantages such as high resolution, high contrast, and fast response.

[0003] Due to the small pixel size of the silicon-based OLED, the problem of lateral leakage current generally exists in the silicon-based OLED. Among them, the lateral leakage current refers to the leakage current flowing between pixels. When displaying at a low gray level, the potential difference between pixels is relatively low, and it is more easily affected by the minute leakage current, resulting in a decrease in color purity. Moreover, the lower the display gray level, the greater the influence of the lateral leakage current on the display color purity.

[0004] With the progress of the marketization of the silicon-based OLED, consumers' requirements for low-gray-level picture display are gradually increasing. Therefore, the current situation of the lateral leakage current of the silicon-based OLED urgently needs to be improved. Summary of the Invention

[0005] The present invention provides an organic light-emitting display device and a manufacturing method thereof to reduce the lateral leakage current and improve the display effect.

[0006] According to one aspect of the present invention, a manufacturing method of an organic light-emitting display device is provided, including:

[0007] Providing a substrate, where the substrate includes a plurality of pixel regions arranged at intervals;

[0008] Forming an anode in the pixel region;

[0009] Performing a passivation treatment on the sidewall of the anode to form a passivation layer at the sidewall of the anode;

[0010] Forming a first insulating layer between the anodes;

[0011] Forming a partition structure on the first insulating layer, where the partition structure is located between the pixel regions.

[0012] According to another aspect of the present invention, an organic light-emitting display device is provided, including:

[0013] A substrate, where the substrate includes a plurality of pixel regions arranged at intervals;

[0014] An anode disposed within the pixel region;

[0015] A passivation layer disposed on the sidewall of the anode;

[0016] A first insulating layer disposed between the anodes;

[0017] A partition structure disposed on the first insulating layer, the partition structure being located between the pixel regions.

[0018] The organic light-emitting display device and the manufacturing method thereof provided by the embodiments of the present invention form a passivation layer on the sidewall of the anode, avoiding direct contact between the sidewall of the anode and the organic light-emitting layer, thereby preventing current from leaking from the sidewall of the anode to the organic light-emitting layer, reducing the risk of lateral leakage current, improving the display effect, and ensuring the current required for normal light emission of the supply pixel, which is beneficial to improving the accuracy of pixel brightness control.

[0019] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present invention, nor is it used to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. Description of the Drawings

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for use in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0021] Figure 1 It is a partial cross-sectional structure schematic diagram of an organic light-emitting display device in the related art;

[0022] Figure 2 It is a partial cross-sectional structure schematic diagram of another organic light-emitting display device in the related art;

[0023] Figure 3 It is a partial cross-sectional structure schematic diagram of yet another organic light-emitting display device in the related art;

[0024] Figure 4 It is a schematic flowchart of a manufacturing method of an organic light-emitting display device provided by an embodiment of the present invention;

[0025] Figures 5 - 13 It is a schematic structural flowchart of a manufacturing method of an organic light-emitting display device provided by an embodiment of the present invention;

[0026] Figure 14 It is a schematic structural flowchart of another manufacturing method of an organic light-emitting display device provided by an embodiment of the present invention;

[0027] Figure 15 Schematic diagram of a partial cross-sectional structure of an organic light-emitting display device provided by an embodiment of the present invention;

[0028] Figure 16 Schematic diagram of a process structure of a manufacturing method of another organic light-emitting display device provided by an embodiment of the present invention;

[0029] Figure 17 Schematic diagram of a partial cross-sectional structure of another organic light-emitting display device provided by an embodiment of the present invention;

[0030] Figure 18 Schematic diagram of a process structure of a manufacturing method of another organic light-emitting display device provided by an embodiment of the present invention;

[0031] Figure 19 Schematic diagram of a partial cross-sectional structure of another organic light-emitting display device provided by an embodiment of the present invention;

[0032] Figure 20 Schematic diagram of a process structure of a manufacturing method of another organic light-emitting display device provided by an embodiment of the present invention;

[0033] Figure 21 Schematic diagram of a process structure of a manufacturing method of another organic light-emitting display device provided by an embodiment of the present invention;

[0034] Figure 22 Schematic diagram of a partial cross-sectional structure of another organic light-emitting display device provided by an embodiment of the present invention;

[0035] Figure 23 Schematic diagram of a partial cross-sectional structure of another organic light-emitting display device provided by an embodiment of the present invention. Detailed implementation manners

[0036] In order to enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0037] It should be noted that the terms "first", "second", etc. in the description, claims and the above drawings of the present invention are used to distinguish similar objects and do not necessarily describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances so that the embodiments of the present invention described here can be implemented in an order other than those illustrated or described here. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0038] Figure 1 FIG. is a schematic partial cross-sectional structure diagram of an organic light-emitting display device in the related art, as Figure 1 shown, on one side of the substrate 10, pixels 20 are arranged in an array. The pixels 20 include an anode 11, an organic light-emitting layer 18 and a cathode 19 which are stacked. A pixel definition layer 21 is further provided on the upper layer of the anode 11. The pixel definition layer 21 is located between adjacent pixels 20 and is used to divide and define each pixel region. The organic light-emitting layer 18 is formed on the upper layer of the pixel definition layer 21. The organic light-emitting layer 18 includes a first carrier adjustment layer 181, a light-emitting material layer 182 and a second carrier adjustment layer 183 which are sequentially stacked. Both the first carrier adjustment layer 181 and the second carrier adjustment layer 183 are provided as a whole layer, that is, the first carrier adjustment layer 181 and the second carrier adjustment layer 183 are continuous film layers between each pixel 20.

[0039] Among them, a lateral leakage current will be formed on the continuous film layer. The lateral leakage current flows between adjacent pixels 20 through the continuous film layer, causing crosstalk between adjacent pixels 20, resulting in the actual emission brightness of different color pixels 20 deviating from the expected value, and further affecting the color purity of the display. Especially when displaying at a low gray level, the potential difference between pixels 20 is small, and the influence of the lateral leakage current is more significant, which may cause loss or distortion of image details, making the display effect at a low gray level less than expected. At the same time, this part of the leakage current will also weaken the current required for the pixels 20 to emit light normally, thereby causing a decrease in the overall brightness of the pixels 20.

[0040] Based on the above technical problems, Figure 2 FIG. is a schematic partial cross-sectional structure diagram of another organic light-emitting display device in the related art, as Figure 2As shown in the figure, in order to suppress lateral leakage current, a first insulating layer 12 is provided between pixels 20, and a partition structure 13 is provided on the first insulating layer 12. The partition structure 13 is used to at least truncate the first carrier adjusting layer 181 in the organic light-emitting layer 18 when preparing the organic light-emitting layer 18, preventing the leakage current on the first carrier adjusting layer 181 from flowing between adjacent pixels 20, thereby reducing the lateral leakage current.

[0041] However, through further research, the inventors found that, as Figure 2 shown in the figure, when etching to form the partition structure 12, over-etching will cause damage (loss) to the first insulating layer 12 under the partition structure 12. Specifically, damage (loss) is formed at the position of the first insulating layer 12 close to the anode 11. At this damaged position, the side wall of the anode 11 is in direct contact with the first carrier adjusting layer 181, thereby forming a new lateral leakage current path and increasing the risk of lateral leakage current. At the same time, affected by the in-plane uniformity of the wafer manufacturing process, there may be slight differences in the etching conditions of the organic light-emitting display device in different regions, resulting in inconsistent damage (loss) degrees and damage (loss) morphologies of the first insulating layer 12 in different regions. This inconsistency will affect the degree of lateral leakage current in different regions, resulting in differences in lateral leakage current in different regions inside the organic light-emitting display device, and causing a large difference in the low gray-scale display effect between different regions inside the organic light-emitting display device.

[0042] Based on the above technical problems, Figure 3 It is a schematic partial cross-sectional structure diagram of another organic light-emitting display device in the related art. As Figure 3 shown in the figure, when forming the first insulating layer 12, the etching time of the first insulating layer 12 can be shortened to reduce the probability of damage (loss) formation caused by over-etching when etching to form the partition structure 12.

[0043] However, through further research, the inventors found that, as Figure 3 shown in the figure, this solution will cause the first insulating layer 12 to overlap above the anode 11, that is, the first insulating layer 12 will cover a part of the anode 11 that should originally be exposed, reducing the effective pixel area actually used for light emission, resulting in a decrease in the pixel aperture ratio, and thus reducing the light emission efficiency and brightness of the organic light-emitting display device. At the same time, shortening the etching time of the first insulating layer 12 when forming the first insulating layer 12 may cause incomplete etching of the first insulating layer 12, resulting in the material of the first insulating layer 12 remaining on the upper surface of the anode 11, affecting the conductivity between the anode 11 and the organic light-emitting layer 18, increasing the contact resistance, and further causing problems such as a higher pixel voltage and increased power consumption, and may cause an irregular Mura phenomenon in the display (that is, uneven brightness or color changes appear on the organic light-emitting display device), affecting the display effect.

[0044] Based on the above technical problems, an embodiment of the present invention provides a manufacturing method for an organic light-emitting display device. Figure 4 FIG. is a schematic flow chart of a manufacturing method for an organic light-emitting display device provided by an embodiment of the present invention. Figures 5 - 13 FIG. is a schematic structural diagram of a process of a manufacturing method for an organic light-emitting display device provided by an embodiment of the present invention. As Figures 5 - 13 shown, the manufacturing method provided by the embodiment of the present invention includes:

[0045] S11. Provide a substrate, where the substrate includes a plurality of pixel regions arranged at intervals.

[0046] Specifically, Figure 6 is Figure 5 a schematic cross-sectional structure diagram of the substrate 10 shown. As Figure 5 and Figure 6 shown, the substrate 10 may be a driving substrate, and a plurality of pixel regions 101 arranged in an array are defined on the substrate 10. In the row or column direction, adjacent pixel regions are pixels that emit light of different colors.

[0047] For example, in the row direction, the pixel region 101 may be divided into a red pixel region, a green pixel region, and a blue pixel region, but is not limited thereto. In some embodiments, the pixel region 101 may also be provided with a white or other color pixel region.

[0048] As Figure 7 shown, optionally, the substrate 10 includes a substrate 31, and a driving transistor T corresponding to the pixel region 101 is disposed on the substrate 31. The driving transistor T is connected to an anode (not shown in the figure), and the driving transistor T can provide a working signal corresponding to the light-emitting brightness of the pixel to the pixel through the anode to drive the pixel to emit light.

[0049] Among them, the driving transistor T may include an active region T1, a gate T2, and a source-drain electrode layer T3 stacked. The active region T1 may be formed in the substrate 31, but is not limited thereto. The embodiment of the present invention does not make specific limitations on this.

[0050] S12. Form an anode in the pixel region.

[0051] Specifically, as Figure 8 shown, an anode 11 is formed in the pixel region 101 on the substrate 10. The anodes 11 corresponding to the respective pixel regions 101 are arranged in an electrically isolated manner. The anode 11 serves as an electrode of the pixel and can inject carriers (such as holes) into the pixel under the drive of the positive voltage of an external power supply.

[0052] S13. Perform a passivation treatment on the sidewall of the anode to form a passivation layer at the sidewall of the anode.

[0053] Among them, passivation treatment refers to forming a protective passivation layer on the surface of a conductive material (such as an anode). This passivation layer has insulating properties and can effectively isolate the conductive material (such as an anode) from the surrounding medium or structure, thereby reducing the possibility of current leakage.

[0054] In this embodiment, as Figure 9 shown, by performing passivation treatment on the side wall of the anode 11, a passivation layer 40 is formed at the side wall of the anode 11. The passivation layer 40 covers the side wall of the anode 11, forming a physical barrier that can prevent current from leaking from the side wall of the anode 11.

[0055] S14. Form a first insulating layer between the anodes.

[0056] Specifically, as Figure 10 shown, a whole layer of the first insulating material layer 120 can be deposited on the upper layer of the anode 11.

[0057] As Figure 10 and Figure 11 shown, the first insulating material layer 120 can be etched by exposure, development, and etching to form the first insulating layer 12. The first insulating layer 12 is located between adjacent pixel regions 101.

[0058] Among them, the first insulating material layer 120 can be etched by photolithography or Chemical Mechanical Polishing (CMP), but it is not limited to this.

[0059] As Figure 11 shown, in the lateral direction, the first insulating layer 12 is located between two adjacent anodes 11, which helps to ensure electrical insulation between two adjacent anodes 11. At the same time, since the anode 11 has a certain thickness, there are pits formed between the two anodes 11. Filling the first insulating layer 12 between two adjacent anodes 11 is also beneficial to reducing the height difference between the area where the anode 11 is located and the area where the pits are located, so that subsequent film layers can be prepared on a relatively flat surface, thereby ensuring the continuity of subsequent film layers.

[0060] S15. Form a partition structure on the first insulating layer. The partition structure is located between pixel regions.

[0061] Specifically, as Figure 12 shown, a partition structure 13 is formed on the first insulating layer 12. The partition structure 13 is arranged to surround the pixel region 101.

[0062] As Figure 13As shown, after forming the partition structure 13 on the first insulating layer 12, an organic light-emitting layer 18 and a cathode 19 are formed on the anode 11. The organic light-emitting layer 18 is at least located within the pixel region 101. When electrons and holes are respectively injected from the cathode 19 and the anode 11 into the organic light-emitting layer 18, the electrons and holes recombine in the organic light-emitting layer 18 to release energy and emit light. The material of the organic light-emitting layer 18 can determine the emission color of the pixel 20.

[0063] Among them, the partition structure 13 can be used to at least truncate the first carrier adjustment layer 181 in the organic light-emitting layer 18 when preparing the organic light-emitting layer 18, prevent the leakage current on the first carrier adjustment layer 181 from flowing between adjacent pixels 20, thereby reducing the lateral leakage current and improving the display effect. It can also ensure the supply of the current required for the normal light emission of the pixel 20, which is beneficial to improving the accuracy of pixel brightness control.

[0064] Meanwhile, as Figure 13 shown, the passivation layer 40 covering the sidewall of the anode 11 forms a physical barrier between the sidewall of the anode 11 and the organic light-emitting layer 18, avoiding the direct contact between the sidewall of the anode 11 and the first carrier adjustment layer 181, thereby preventing the current from leaking from the sidewall of the anode 11 to the organic light-emitting layer 18 and further reducing the risk of lateral leakage current.

[0065] Moreover, when forming the first insulating layer 12, it is not necessary to shorten the etching time of the first insulating layer 12, thereby avoiding the first insulating layer 12 overlapping above the anode 11, ensuring the pixel aperture ratio, and avoiding affecting the light-emitting efficiency and brightness of the organic light-emitting display device. At the same time, it can also avoid incomplete etching of the first insulating layer 12, thereby eliminating the risk of the material of the first insulating layer 12 remaining on the upper surface of the anode 11, ensuring the conductivity between the anode 11 and the organic light-emitting layer 18, and avoiding problems such as too high pixel voltage and increased power consumption.

[0066] In addition, the passivation treatment process can also ensure the formation of a uniform and consistent passivation layer 40 within the entire area of the organic light-emitting display device, enhancing the consistency and reliability of the manufacturing process, reducing the possible display effect differences between different regions, and improving the display effect.

[0067] In summary, in the manufacturing method of the organic light-emitting display device provided by the embodiment of the present invention, by passivating the sidewalls of the anode, a passivation layer is formed at the sidewalls of the anode, avoiding direct contact between the sidewalls of the anode and the organic light-emitting layer, thereby preventing current from leaking from the sidewalls of the anode to the organic light-emitting layer, reducing the risk of lateral leakage current, improving the display effect, and ensuring the current required for the pixels to emit light normally, which is beneficial to improving the accuracy of pixel brightness control. Moreover, there is no need to shorten the etching time of the first insulating layer, which will not affect the luminous efficiency and brightness of the organic light-emitting display device, nor is there a risk of the first insulating layer material remaining on the upper surface of the anode. In addition, the passivation treatment process can also ensure the formation of a uniform and consistent passivation layer within the entire area of the organic light-emitting display device, enhancing the consistency and reliability of the manufacturing process, reducing the possible display effect differences between different regions, and improving the display uniformity.

[0068] Optionally, forming an anode within the pixel region includes:

[0069] Forming an anode material layer on the substrate.

[0070] Forming a mask on the anode material layer.

[0071] Etching the anode material layer using the mask to form the anode.

[0072] Passivating the sidewalls of the anode includes:

[0073] Passivating the sidewalls of the anode using the mask.

[0074] Figure 14 For another manufacturing method of the organic light-emitting display device provided by the embodiment of the present invention, the flowchart structure diagram is as Figure 14 (a) shows that a whole layer of anode material layer 110 is deposited on the substrate 10.

[0075] As Figure 14 (b) shows that a layer of mask 50 is formed on the anode material layer 110. The mask 50 can be patterned using lithography technology, and the mask 50 located between the pixel regions 101 is removed by etching, so as to leave a mask 50 pattern corresponding to the pattern of the anode on the anode material layer 110.

[0076] As Figure 14 (c) shows that dry etching or wet etching technology is used to selectively etch the anode material layer 110 according to the pattern of the mask 50. The mask 50 is used to protect the part of the anode material layer 110 that does not need to be etched, and the anode material layer 110 not covered by the mask 50 is etched away, finally forming the anode 11 structure within the pixel region 101.

[0077] As Figure 14As shown in (d), after forming the anode 11 and before removing the mask 50, the sidewalls of the anode 11 are passivated using the mask 50. In this step, with the existing mask 50 structure as protection, the position of the passivation layer 40 is accurately positioned to ensure that the formed passivation layer 40 only covers the sidewalls of the anode 11 rather than the entire surface of the anode 11, avoiding affecting the function of the anode 11 and also avoiding additional complex processes.

[0078] After completing the passivation process, the mask 50 is then removed to facilitate subsequent process steps, such as the formation of the first insulating layer and the partition structure.

[0079] Optionally, the material of the mask 50 includes at least one of silicon oxide (SiOx) and silicon nitride (SiNx).

[0080] Among them, when the mask 50 is made of a highly corrosion-resistant material such as silicon oxide (SiOx) or silicon nitride (SiNx), the mask 50 can form a hard mask (HM) structure. Compared with traditional photoresist (soft mask), the hard mask has higher selectivity and better corrosion resistance, and can withstand etching for a longer time without being damaged, thereby avoiding damage to the mask 50 during the formation of the anode 11 and the passivation treatment of the sidewalls of the anode 11, and ensuring a high degree of accuracy in the formation positions of the anode 11 and the passivation layer 40.

[0081] In other embodiments, the material selection of the mask 50 can also be adjusted according to specific etching requirements to avoid unnecessary material loss or damage, and the embodiments of the present invention do not make specific limitations in this regard.

[0082] Optionally, the thickness of the mask 50 is greater than or equal to 20 nm and less than or equal to 100 nm.

[0083] Among them, by setting the thickness of the mask 50 to be greater than or equal to 20 nm, the mask 50 has sufficient thickness to withstand the etching and passivation processes without being completely consumed, ensuring the integrity of the pattern of the mask 50 during the etching and passivation processes, and thus ensuring a high degree of accuracy in the formation positions of the anode 11 and the passivation layer 40.

[0084] At the same time, setting the thickness of the mask 50 to be less than or equal to 100 nm can ensure that the mask 50 is not too thick, thereby increasing the difficulty and cost of removing the mask 50 subsequently.

[0085] Exemplarily, the thickness of the mask 50 can be set to 50 nm to ensure the integrity of the pattern of the mask 50 during the etching and passivation processes while ensuring that the mask 50 is not too thick to increase the difficulty and cost of removing the mask 50 subsequently, but it is not limited thereto.

[0086] Figure 15The figure is a schematic cross-sectional structure diagram of a partial area of an organic light-emitting display device provided by an embodiment of the present invention. As Figure 15 shown, optionally, the anode 11 includes a transparent anode layer 111, and the passivation layer 40 includes a first passivation layer 401.

[0087] Furthermore, passivation treatment is performed on the sidewalls of the anode to form a passivation layer at the sidewalls of the anode, including:

[0088] The sidewalls of the transparent anode layer are passivated by using oxygen plasma to form a first passivation layer at the sidewalls of the transparent anode layer.

[0089] Specifically, Figure 16 The figure is a schematic flow structure diagram of another manufacturing method of an organic light-emitting display device provided by an embodiment of the present invention. As Figure 15 and Figure 16 shown, the transparent anode layer 111 can be used to form a microcavity effect. By setting transparent anode layers 111 with different thicknesses in pixel regions 101 displaying different colors, the length of the microcavity can be adjusted to enhance the light of the displayed color, improve the luminous efficiency of the corresponding color light, and is beneficial to improving color purity.

[0090] In this embodiment, as Figure 16 (a) shown, before removing the mask 50, the sidewalls of the transparent anode layer 111 are passivated by using oxygen plasma (O2 Plasma).

[0091] As Figure 16 (b) shown, the oxygen plasma can form a thin oxide layer on the sidewall surface of the transparent anode layer 111. This oxide has good insulation performance and thus can serve as the first passivation layer 401. The first passivation layer 401 covers the sidewall surface of the transparent anode layer 111 to effectively prevent current from leaking from the sidewalls of the transparent anode layer 111 and reduce the risk of lateral leakage current.

[0092] Among them, the oxygen plasma (O2 Plasma) treatment can form a uniform and consistent first passivation layer 401 within the entire organic light-emitting display device, thereby enhancing the consistency and reliability of the manufacturing process, reducing the possible display effect differences between different regions, and improving display uniformity.

[0093] At the same time, by introducing oxygen plasma for passivation treatment, the problem of lateral leakage current can be effectively solved without adding complex process steps, which is beneficial to simplifying the manufacturing process and reducing production costs.

[0094] It should be noted that the parameters of the oxygen plasma treatment (such as radio frequency power, treatment time, oxygen flow rate, etc.) can be optimized according to specific process requirements to ensure the formation of a uniform and dense first passivation layer 401.

[0095] Optionally, when passivating the sidewalls of the transparent anode layer 111 using oxygen plasma, the oxygen flow rate is greater than or equal to 20 sccm and less than or equal to 100 sccm.

[0096] Specifically, the oxygen flow rate can affect the density and uniformity of the plasma. A suitable oxygen flow rate can maintain a stable plasma state within the plasma region, thereby ensuring that the sidewalls of the entire transparent anode layer 111 can be passivated uniformly.

[0097] Among them, the effect of the oxygen plasma treatment depends on the number and energy of reactive oxygen species (such as oxygen atoms, oxygen radicals, and oxygen ions). A sufficient oxygen flow rate can ensure the generation of a sufficient number of reactive oxygen species to achieve effective passivation.

[0098] In this embodiment, setting the oxygen flow rate during the passivation treatment to be greater than or equal to 20 sccm (standard cubic centimeters per minute) can ensure that sufficient oxygen enters the plasma region, generating sufficient reactive oxygen species to cover the sidewalls of the transparent anode layer 111 to form a uniform and dense oxide layer (i.e., the first passivation layer 401), thereby effectively preventing current leakage from the sidewalls of the transparent anode layer 111 and reducing the risk of lateral leakage current.

[0099] Furthermore, although a higher oxygen flow rate can increase the number of reactive oxygen species, an excessively high flow rate may cause the plasma environment to be too dilute or unstable, affecting the treatment effect and even possibly introducing unnecessary side reactions or defects.

[0100] In this embodiment, setting the oxygen flow rate during the passivation treatment to be less than or equal to 100 sccm (standard cubic centimeters per minute) can prevent excessive dilution of the plasma, ensuring the stability and consistency of the treatment process, which is beneficial to forming a uniform and consistent first passivation layer 401 within the entire organic light-emitting display device, thereby reducing the possible display effect differences between different regions and improving the display uniformity.

[0101] Exemplarily, setting the oxygen flow rate during the passivation treatment to be 50 sccm can not only ensure the generation of sufficient reactive oxygen species but also maintain the stability and uniformity of the plasma, thereby improving the film quality of the first passivation layer 401, effectively preventing current leakage from the sidewalls of the transparent anode layer 111, reducing the risk of lateral leakage current, and at the same time improving the in-plane uniformity.

[0102] Optionally, when passivating the sidewalls of the transparent anode layer 111 using oxygen plasma, the radio frequency power is greater than or equal to 50 W and less than or equal to 200 W.

[0103] Specifically, the radio frequency power can also affect the density and uniformity of the plasma. An appropriate radio frequency power can maintain a stable plasma state within the plasma region, thereby ensuring that the sidewalls of the entire transparent anode layer 111 can be passivated uniformly.

[0104] Among them, a higher radio frequency power can provide more energy, making it easier for oxygen molecules to be ionized and excited, thereby generating more reactive oxygen species (such as oxygen atoms, oxygen free radicals, and oxygen ions) to achieve effective passivation.

[0105] In this embodiment, setting the radio frequency power during the passivation treatment to be greater than or equal to 50 W can ensure that there is sufficient energy to form a plasma and generate a sufficient number of reactive oxygen species for effective passivation treatment.

[0106] Furthermore, although a higher radio frequency power can increase the number of reactive oxygen species, an excessively high power may cause the plasma environment to be too intense, possibly leading to unnecessary side reactions or overheating, affecting the treatment effect and even damaging the material.

[0107] In this embodiment, setting the radio frequency power during the passivation treatment to be less than or equal to 200 W can prevent excessive ionization and heat accumulation, ensuring the stability and consistency of the treatment process.

[0108] Exemplarily, setting the radio frequency power during the passivation treatment to be 100 W can not only ensure the generation of sufficient reactive oxygen species but also maintain the stability and uniformity of the plasma, thereby improving the film quality of the first passivation layer 401, effectively preventing current leakage from the sidewalls of the transparent anode layer 111, reducing the risk of lateral leakage current, and at the same time improving the in-plane uniformity.

[0109] Optionally, the treatment time for passivating the sidewalls of the transparent anode layer 111 using oxygen plasma is greater than or equal to 60 seconds and less than or equal to 200 seconds.

[0110] Among them, the formation of the first passivation layer 401 requires a certain amount of time to ensure that the reactive oxygen species react sufficiently with the material of the first passivation layer 401 to form a dense and uniform oxide layer (i.e., the first passivation layer 401). If the treatment time is too short, the first passivation layer 401 may not be thick enough or uniform enough to effectively prevent lateral leakage current.

[0111] In this embodiment, setting the treatment time of the passivation treatment to be greater than or equal to 60 seconds can ensure that there is sufficient time for the reactive oxygen species to react with the sidewalls of the transparent anode layer 111 to form a first passivation layer 401 thick enough to effectively prevent current leakage from the sidewalls of the transparent anode layer 111 and reduce the risk of lateral leakage current.

[0112] Further, although a longer processing time can generate a thicker first passivation layer 401, an excessively long time may cause unnecessary side reactions or over-oxidation, affecting the material properties and even damaging the surface of the transparent anode layer 111.

[0113] In this embodiment, setting the processing time of the passivation treatment to be less than or equal to 200 seconds can prevent over-treatment, ensure the quality and uniformity of the first passivation layer 401, thereby reducing the possible display effect differences between different regions and improving the display uniformity.

[0114] Exemplarily, the processing time of the passivation treatment is 100 seconds, which can not only ensure the formation of a thick enough first passivation layer 401 but also avoid the negative impacts brought by over-treatment, thereby improving the consistency and reliability of the first passivation layer 401, effectively preventing current leakage from the sidewalls of the transparent anode layer 111, reducing the risk of lateral leakage current, and improving the in-plane uniformity at the same time.

[0115] Optionally, the material of the transparent anode layer 111 includes at least one of indium tin oxide and indium zinc oxide.

[0116] Specifically, indium tin oxide (ITO) and indium zinc oxide (IZO) have high transparency and good conductivity. In this embodiment, the transparent anode layer 111 is made of the above materials, which can meet the conductivity requirements of the transparent anode layer 111 and the need for the formation of the microcavity effect, while being well adapted to the existing manufacturing processes and reducing the process difficulty.

[0117] At the same time, indium tin oxide and indium zinc oxide usually have a high surface smoothness. When the transparent anode layer 111 is made of the above materials, it is easy to undergo an oxidation reaction in oxygen plasma and is easy to form a dense and uniform oxide layer as the first passivation layer 401, thereby better realizing current isolation, reducing the risk of lateral leakage current, and helping to improve the in-plane uniformity.

[0118] Optionally, the material of the transparent anode layer 111 includes indium tin oxide, and the material of the first passivation layer 401 includes at least one of SnO and In2O3.

[0119] Specifically, when the material of the transparent anode layer 111 is indium tin oxide (ITO), it can have very high transparency and good conductivity.

[0120] Among them, when the sidewalls of the transparent anode layer 111 are passivated using oxygen plasma, reactive oxygen species (such as oxygen radicals and oxygen ions) will react with the ITO surface, and the active Sn at the sidewalls of the ITO n+1 O nand Sn 2n O 2n-1 It is easily converted into a more stable oxide form and passivated into tin oxide (SnO). At the same time, these reactive oxygen species can also further oxidize the tin component in ITO, converting it into a more stable oxide form to form indium oxide (In2O3).

[0121] By forming tin oxide (SnO) and / or indium oxide (In2O3) as the first passivation layer 401, an effective insulating barrier can be formed to cover the sidewalls of the transparent anode layer 111, thereby significantly reducing the lateral leakage current.

[0122] Figure 17 A partial cross-sectional structural schematic diagram of another organic light-emitting display device provided by an embodiment of the present invention is shown as Figure 17 shown. Optionally, the anode 11 includes a reflective anode layer 112, and the passivation layer 40 includes a second passivation layer 402.

[0123] Further, the sidewalls of the anode are passivated to form a passivation layer at the sidewalls of the anode, including:

[0124] At a first temperature, the sidewalls of the reflective anode layer are passivated using oxygen plasma to form a second passivation layer at the sidewalls of the reflective anode layer.

[0125] The first temperature is greater than or equal to 100 °C and less than or equal to 250 °C.

[0126] Specifically, Figure 18 A flow structural schematic diagram of a manufacturing method of another organic light-emitting display device provided by an embodiment of the present invention is shown as Figure 17 and Figure 18 shown. The reflective anode layer 112 is disposed within the pixel region 101. The reflective anode layer 112 can be made of a metal material with high conductivity (such as silver, copper, etc.), thereby reducing the resistance of the anode 11 and improving the current transmission efficiency.

[0127] Optionally, the thicknesses of the reflective anode layers 112 in each pixel region 101 can be the same, thereby simplifying the manufacturing process and improving production efficiency, but it is not limited thereto.

[0128] In this embodiment, as Figure 18 (a) shows, before removing the mask 50, at a first temperature, the sidewalls of the reflective anode layer 112 are passivated using oxygen plasma (O2 Plasma).

[0129] As Figure 18As shown in (b), the oxygen plasma can form a thin oxide layer on the sidewall surface of the reflective anode layer 112, which has good insulation properties and can thus serve as the second passivation layer 402. The second passivation layer 402 covers the sidewall surface of the reflective anode layer 112 to effectively prevent current leakage from the sidewalls of the reflective anode layer 112 and reduce the risk of lateral leakage current.

[0130] Among them, the first temperature is greater than or equal to 100 °C to increase the reaction rate through a higher temperature, making it easier for reactive oxygen species to react with the sidewall surface of the reflective anode layer 112 to form a uniform and dense second passivation layer 402.

[0131] At the same time, the first temperature is less than or equal to 250 °C to avoid damage to the material or unnecessary side reactions caused by too high a temperature. Especially for some heat-sensitive materials (such as ITO or organic layers) in the organic light-emitting display device, too high a temperature may damage them (for example, too high a temperature causes crystallization of ITO and thus reduces its transparency).

[0132] In this embodiment, performing oxygen plasma (O2 Plasma) treatment within a suitable temperature range can form a uniform and consistent second passivation layer 402 throughout the organic light-emitting display device, thereby enhancing the consistency and reliability of the process, reducing the possible display effect differences between different regions, and improving the display uniformity.

[0133] At the same time, by introducing oxygen plasma for passivation treatment, the lateral leakage current problem can be effectively solved without adding complex process steps, which is beneficial to simplifying the manufacturing process and reducing production costs.

[0134] It should be noted that the parameters of the oxygen plasma treatment (such as radio frequency power, treatment time, oxygen flow rate, etc.) can be optimized according to specific process requirements to ensure the formation of a uniform and dense second passivation layer 402.

[0135] Optionally, when using oxygen plasma to passivate the sidewalls of the reflective anode layer 112, the oxygen flow rate introduced is greater than or equal to 300 sccm and less than or equal to 500 sccm.

[0136] Among them, setting the oxygen flow rate introduced during the passivation treatment to be greater than or equal to 300 sccm (standard cubic centimeters per minute) can ensure that sufficient oxygen enters the plasma region to generate sufficient reactive oxygen species to cover the sidewalls of the reflective anode layer 112 to form a uniform and dense oxide layer (i.e., the second passivation layer 402), thereby effectively preventing current leakage from the sidewalls of the reflective anode layer 112 and reducing the risk of lateral leakage current.

[0137] Furthermore, setting the oxygen flow rate introduced during the passivation treatment to be less than or equal to 500 sccm (standard cubic centimeters per minute) can prevent over-dilution of the plasma, ensuring the stability and consistency of the treatment process, which is beneficial to forming a uniform and consistent second passivation layer 402 across the entire organic light-emitting display device, thereby reducing the possible differences in display effects between different regions and improving display uniformity.

[0138] Exemplarily, setting the oxygen flow rate introduced during the passivation treatment to be 400 sccm can not only ensure the generation of sufficient reactive oxygen species but also maintain the stability and uniformity of the plasma, thereby improving the film quality of the second passivation layer 402, effectively preventing current leakage from the sidewalls of the reflective anode layer 112, reducing the risk of lateral leakage current, and at the same time improving in-plane uniformity.

[0139] Optionally, when passivating the sidewalls of the reflective anode layer 112 using oxygen plasma, the radio frequency power introduced is greater than or equal to 10 W and less than or equal to 60 W.

[0140] Among them, setting the radio frequency power during the passivation treatment to be greater than or equal to 10 W can ensure sufficient energy to form plasma and generate a sufficient number of reactive oxygen species for effective passivation treatment.

[0141] Furthermore, setting the radio frequency power during the passivation treatment to be less than or equal to 60 W can prevent over-ionization and heat accumulation, ensuring the stability and consistency of the treatment process.

[0142] Exemplarily, setting the radio frequency power during the passivation treatment to be 25 W can not only ensure the generation of sufficient reactive oxygen species but also maintain the stability and uniformity of the plasma, thereby improving the film quality of the second passivation layer 402, effectively preventing current leakage from the sidewalls of the reflective anode layer 112, reducing the risk of lateral leakage current, and at the same time improving in-plane uniformity.

[0143] Optionally, the treatment time for passivating the sidewalls of the reflective anode layer 112 using oxygen plasma is greater than or equal to 0.5 hours and less than or equal to 10 hours.

[0144] Among them, setting the treatment time of the passivation treatment to be greater than or equal to 0.5 hours can ensure sufficient time for the reactive oxygen species to react with the sidewalls of the reflective anode layer 112 to form a second passivation layer 402 of sufficient thickness, thereby effectively preventing current leakage from the sidewalls of the reflective anode layer 112 and reducing the risk of lateral leakage current.

[0145] Furthermore, setting the processing time of the passivation treatment to be less than or equal to 10 hours can prevent overprocessing, ensure the quality and uniformity of the second passivation layer 402, thereby reducing the possible display effect differences between different regions and improving the display uniformity.

[0146] Exemplarily, the processing time of the passivation treatment is 8 hours, which can not only ensure the formation of a sufficiently thick second passivation layer 402 but also avoid the negative impacts brought by overprocessing, thereby improving the consistency and reliability of the second passivation layer 402, effectively preventing current leakage from the sidewalls of the reflective anode layer 112, reducing the risk of lateral leakage current, and at the same time improving the in-plane uniformity.

[0147] Optionally, the material of the reflective anode layer 112 includes at least one of aluminum, silver, and gold.

[0148] Among them, using at least one of aluminum (Al), silver (Ag), and gold (Au) for the reflective anode layer 112 can make the reflective anode layer 112 have a lower resistivity, thereby reducing the resistance of the anode 11 and improving the current transmission efficiency.

[0149] At the same time, using the above-mentioned metal materials, especially aluminum and silver, for the reflective anode layer 112 is more likely to undergo an oxidation reaction in oxygen plasma and is prone to form a dense and uniform oxide layer as the second passivation layer 402, thereby better achieving current isolation, reducing the risk of lateral leakage current, and also helping to improve the in-plane uniformity.

[0150] Optionally, the material of the reflective anode layer 112 includes aluminum, and the material of the second passivation layer 402 includes aluminum oxide.

[0151] Specifically, using aluminum (Al) as the material of the reflective anode layer 112 can have good electrical conductivity. At the same time, aluminum (Al) is more likely to undergo an oxidation reaction in oxygen plasma and is prone to form a dense and uniform oxide layer as the second passivation layer 402, thereby better achieving current isolation, reducing the risk of lateral leakage current, and also helping to improve the in-plane uniformity.

[0152] Among them, when using oxygen plasma to passivate the sidewalls of the reflective anode layer 112, reactive oxygen species (such as oxygen radicals and oxygen ions) will react with the surface of the reflective anode layer 112, and the aluminum (Al) at the sidewalls of the reflective anode layer 112 is easily converted into a more stable oxide form and passivated into aluminum oxide (Al2O3).

[0153] Aluminum oxide (Al2O3) is a very dense and stable oxide with excellent insulating properties. By passivating to form aluminum oxide (Al2O3) as the second passivation layer 402, an effective insulating barrier can be formed to cover the sidewalls of the reflective anode layer 112, thereby significantly reducing the lateral leakage current.

[0154] Figure 19 FIG. is a partial cross-sectional structural schematic diagram of another organic light-emitting display device provided by an embodiment of the present invention. As Figure 19 shown, optionally, the anode 11 includes a reflective anode layer 112 and a transparent anode layer 111 located on the upper layer of the reflective anode layer 112.

[0155] The passivation layer 40 includes a first passivation layer 401 and a second passivation layer 402.

[0156] Further, passivation treatment is performed on the sidewalls of the anode to form a first passivation layer at the sidewalls of the transparent anode layer, including:

[0157] At a second temperature, the sidewalls of the transparent anode layer are passivated using oxygen plasma to form a first passivation layer at the sidewalls of the transparent anode layer.

[0158] At a first temperature, the sidewalls of the reflective anode layer are passivated using oxygen plasma to form a second passivation layer at the sidewalls of the reflective anode layer.

[0159] The first temperature is higher than the second temperature.

[0160] Specifically, Figure 20 FIG. is a flow structural schematic diagram of a manufacturing method of another organic light-emitting display device provided by an embodiment of the present invention. As Figure 19 and Figure 20 shown, the anode 11 may simultaneously include a reflective anode layer 112 and a transparent anode layer 111. Among them, the transparent anode layer 111 is disposed on the upper layer of the reflective anode layer 112. The structures and functions of the reflective anode layer 112 and the transparent anode layer 111 may refer to the above embodiments and will not be elaborated here.

[0161] In this embodiment, as Figure 20 (a) shown, before removing the mask 50, at a second temperature, the sidewalls of the transparent anode layer 111 are passivated using oxygen plasma (O2 Plasma). At a first temperature, the sidewalls of the reflective anode layer 112 are passivated using oxygen plasma (O2 Plasma).

[0162] As Figure 20As shown in (b), when passivating the sidewalls of the transparent anode layer 111, oxygen plasma forms a first passivation layer 401 on the sidewall surface of the transparent anode layer 111 to effectively prevent current leakage from the sidewalls of the transparent anode layer 111; when passivating the sidewalls of the reflective anode layer 112, oxygen plasma forms a second passivation layer 402 on the sidewall surface of the reflective anode layer 112 to effectively prevent current leakage from the sidewalls of the reflective anode layer 112, thereby reducing the risk of lateral leakage current.

[0163] Among them, the first temperature is higher than the second temperature to increase the reaction rate at the sidewalls of the reflective anode layer 112 through the higher temperature, making it easier for reactive oxygen species to react with the sidewall surface of the reflective anode layer 112 to form a uniform and dense second passivation layer 402.

[0164] At the same time, by performing oxygen plasma (O2 Plasma) treatment on the sidewalls of the transparent anode layer 111 and the sidewalls of the reflective anode layer 112 within a suitable temperature range, uniform and consistent first passivation layer 401 and second passivation layer 402 can be formed throughout the organic light-emitting display device, thereby enhancing the process consistency and reliability, reducing the possible display effect differences between different regions, and improving the display uniformity.

[0165] At the same time, by introducing oxygen plasma for passivation treatment, the problem of lateral leakage current can be effectively solved without adding complex process steps, which is beneficial to simplifying the manufacturing process and reducing production costs.

[0166] It should be noted that the parameters (such as radio frequency power, treatment time, oxygen flow rate, etc.) for the oxygen plasma treatment of the transparent anode layer 111 and the reflective anode layer 112 can refer to the above embodiments and will not be elaborated here.

[0167] In addition, the order of passivating the sidewalls of the transparent anode layer 111 and passivating the sidewalls of the reflective anode layer 112 is not limited, and those skilled in the art can set it according to actual needs.

[0168] Optionally, the thickness of the transparent anode layer 111 is greater than or equal to 10 nm and less than or equal to 150 nm.

[0169] Among them, the thickness of the transparent anode layer 111 being greater than or equal to 10 nm can ensure that the transparent anode layer 111 has sufficient conductivity and avoid the problem of high resistance caused by being too thin.

[0170] At the same time, the thickness of the transparent anode layer 111 being less than or equal to 150 nm can maintain a high transparency and will not significantly reduce the transmittance, thereby being beneficial to forming a microcavity effect, improving the light emission efficiency of the corresponding color light, and improving the color purity.

[0171] Furthermore, the thickness of the transparent anode layer 111 can affect the length of the microcavity formed between the anode 11 and the cathode 19. The length of the microcavity can affect the spectral peak of the light emitted from the microcavity. Therefore, by configuring the thickness of the transparent anode layer 111, the microcavity can have a resonant wavelength corresponding to the desired peak color wavelength of the pixel, thereby improving the light emission efficiency.

[0172] It can be understood that different colors correspond to different wavelengths. To achieve the best light emission efficiency, pixels of each color need to have different microcavity lengths. Therefore, the transparent anode layer 111 in the pixel regions 101 emitting different colors of light can have different thicknesses, so that the microcavities formed between the anode 11 and the cathode 19 have different microcavity lengths, ensuring that the light emitted from each pixel region 101 has better light emission efficiency.

[0173] Among them, the longer the length of the microcavity formed between the anode 11 and the cathode 19, the larger the wavelength of the output light.

[0174] In this embodiment, the pixel region 101 can include a red pixel region, a green pixel region, and a blue pixel region to achieve a wide color range.

[0175] Among them, the red light emitted from the red pixel region has the longest wavelength. The thickness of the transparent anode layer 111 in the red pixel region can be set to be the largest, so that the length of the microcavity formed between the anode 11 and the cathode 19 is the longest; the blue light emitted from the blue pixel region has the shortest wavelength. The thickness of the transparent anode layer 111 in the blue pixel region can be set to be the smallest, so that the length of the microcavity formed between the anode 11 and the cathode 19 is the shortest; the green light emitted from the green pixel region has a wavelength between the red light wavelength and the blue light wavelength. The thickness of the transparent anode layer 111 in the green pixel region can be set to be between the thickness of the transparent anode layer 111 in the red pixel region and the thickness of the transparent anode layer 111 in the blue pixel region, so that the length of the microcavity formed between the anode 11 and the cathode 19 is appropriate, so that the microcavity lengths of the respective pixel regions 101 match the wavelengths of their emitted light colors, ensuring that the light emitted from each pixel region 101 has the best light emission efficiency.

[0176] Exemplarily, the thickness of the transparent anode layer 111 in the blue pixel region is 20 nm, the thickness of the transparent anode layer 111 in the green pixel region is 70 nm, and the thickness of the transparent anode layer 111 in the red pixel region is 110 nm, so that the microcavity lengths of the respective pixel regions 101 match the wavelengths of their emitted light colors, ensuring that the light emitted from each pixel region 101 has the best light emission efficiency, but it is not limited thereto.

[0177] Optionally, the thickness of the reflective anode layer 112 is greater than or equal to 80 nm and less than or equal to 150 nm.

[0178] Among them, a thickness of the reflective anode layer 112 greater than or equal to 80 nm can ensure that the reflective anode layer 112 has sufficient conductivity and avoid high resistance problems caused by being too thin.

[0179] At the same time, a thickness of the reflective anode layer 112 less than or equal to 150 nm can reduce unnecessary material waste and lower production costs.

[0180] Exemplarily, the thickness of the reflective anode layer 112 is 100 nm to ensure that the reflective anode layer 112 has sufficient conductivity, while reducing unnecessary material waste and lowering production costs, but is not limited thereto.

[0181] Continue to refer to Figures 1 - 20 , optionally, the thickness of the passivation layer 40 is greater than or equal to 5 nm.

[0182] Among them, the thickness of the passivation layer 40 refers to the thickness in the direction perpendicular to the plane where the side wall of the anode 11 is located. It can be understood that if the passivation layer 40 is too thin, it may not be able to completely cover the side wall surface of the anode 11, resulting in current leakage from the side wall of the anode 11.

[0183] In this embodiment, by ensuring that the thickness of the passivation layer 40 is greater than or equal to 5 nm, so that the passivation layer 40 has sufficient thickness, it can effectively prevent current from leaking from the side wall of the anode 11, reduce the risk of lateral leakage current, and improve the display effect.

[0184] Optionally, the thickness of the passivation layer 40 is less than or equal to 100 nm.

[0185] Among them, if the thickness of the passivation layer 40 is too large, it will occupy more lateral space, thereby reducing the area of the effective light-emitting region, causing a decrease in the pixel aperture ratio, and thus affecting the light-emitting efficiency and brightness of the organic light-emitting display device.

[0186] In this embodiment, setting the thickness of the passivation layer 40 to be less than or equal to 100 nm can effectively prevent current from leaking from the side wall of the anode 11, reduce the risk of lateral leakage current, and at the same time reduce the influence of the passivation layer 40 on the pixel aperture ratio, thereby ensuring the light-emitting efficiency and brightness of the organic light-emitting display device.

[0187] Table 1 details the performance indicators of the organic light-emitting display device under different schemes. Among them, Scheme 1 corresponds to Figure 2 the organic light-emitting display device scheme shown (over-etching damage of the first insulating layer (loss)), Scheme 2 corresponds to Figure 3 the organic light-emitting display device scheme shown (the etching time of the first insulating layer is shortened so that the first insulating layer overlaps above the anode), and Scheme 3 corresponds to Figure 8 the organic light-emitting display device scheme shown (passivation of the anode side wall to form a passivation layer).

[0188] Table 1 Performance Indicators of the Organic Light-Emitting Display Device

[0189]

[0190]

[0191] In Table 1, the average efficiency of R, G, and B represents the average efficiency of the red, green, and blue color pixels at a brightness of 6000 nits. The higher the value, the better the efficiency. The voltage fluctuation ranges of R, G, and B represent the voltage fluctuation ranges of the red, green, and blue color pixels at a brightness of 6000 nits. The smaller the value, the better the voltage stability. The current densities of R, G, and B represent the current densities of the red, green, and blue color pixels at a voltage of 4V. The lower the value, the less the leakage current. Irregular Mura refers to the uneven phenomenon that appears on the organic light-emitting display device. The lower the incidence value, the less the uneven phenomenon.

[0192] It can be seen from Table 1 that Solution 3 performs optimally in terms of efficiency improvement, voltage fluctuation improvement, and leakage current improvement, and has the lowest incidence of irregular Mura.

[0193] Optionally, a partition structure is formed on the first insulating layer, including:

[0194] A second insulating layer is formed on the first insulating layer.

[0195] A third insulating layer is formed on the second insulating layer, and the edge of the third insulating layer extends beyond the edge of the second insulating layer to form a partition structure.

[0196] Specifically, Figure 21 is a schematic flow structure diagram of another manufacturing method of the organic light-emitting display device provided by the embodiment of the present invention. As Figure 21 (a) shows, after forming the first insulating layer 12 between the anodes 11, a whole layer of the second insulating material layer 1310 and the third insulating material layer 1320 can be sequentially deposited on the upper layer of the first insulating layer 12.

[0197] As Figure 21 (b) shows, the second insulating material layer 1310 and the third insulating material layer 1320 can be etched by exposure, development, and etching to form the second insulating layer 131 and the third insulating layer 132 located between adjacent pixel regions 101.

[0198] As Figure 21 (c) shows, the sidewall of the second insulating layer 131 is etched so that the edges of the third insulating layer 132 all extend beyond the edges of the second insulating layer 131, thereby forming a partition structure 13.

[0199] Among them, an appropriate etching gas or liquid can be selected for the second insulating layer 131, so that the etching rate of the second insulating layer 131 is much greater than that of the third insulating layer 132, and the side walls of the second insulating layer 131 are preferentially etched. Then, the side walls of the second insulating layer 131 are recessed inward, so that the edges of the third insulating layer 132 all extend beyond the edges of the second insulating layer 131. At this time, an eaves structure is formed above the edges of the second insulating layer 131 by the edge portions of the third insulating layer 132.

[0200] Figure 22 FIG. is a partial cross-sectional structural schematic diagram of another organic light-emitting display device provided by an embodiment of the present invention. As Figure 22 shown, when the organic light-emitting layer 18 is subsequently fabricated, the eaves structure at the edge of the third insulating layer 132 will block a part of the upper surface of the first insulating layer 12, thereby forming a shielding region under the eaves structure at the edge of the third insulating layer 132. Part of the first carrier adjustment layer 181 in the organic light-emitting layer 18 where leakage current is likely to occur is deposited on the upper surface of the third insulating layer 132 and part is deposited on the upper surface of the first insulating layer 12. However, the first carrier adjustment layer 181 cannot be deposited in this shielding region, so the first carrier adjustment layer 181 is cut off at this shielding region, such that the first carrier adjustment layer 181 deposited on the upper surface of the third insulating layer 132 and the first carrier adjustment layer 181 deposited on the upper surface of the first insulating layer 12 cannot be connected and are disconnected at this shielding region, thereby cutting off the leakage current, preventing the leakage current on the first carrier adjustment layer 181 from flowing between adjacent pixel regions 101, thereby reducing the lateral leakage current, improving the display effect, and ensuring the current required for the pixels to emit light normally, which is beneficial to improving the accuracy of pixel brightness control.

[0201] Optionally, the material of the first insulating layer 12 includes at least one of silicon oxide (SiOx), silicon nitride (SiNx), and tetraethyl orthosilicate (TEOS), and can maintain good insulating properties in a high-temperature environment.

[0202] At the same time, in the process of forming the first insulating layer 12, it will not have too much impact on the passivation layer 40.

[0203] For example, the material of the first insulating layer 12 is tetraethyl orthosilicate (TEOS) to have good chemical stability and can effectively prevent the penetration of moisture and oxygen, prolonging the service life of the device, but not limited thereto.

[0204] Optionally, the thickness of the first insulating layer 12 is greater than or equal to 200 nm and less than or equal to 500 nm, so that the first insulating layer 12 provides sufficient insulation performance to ensure the electrical isolation effect. At the same time, the excessive thickness of the first insulating layer 12 is avoided to increase the manufacturing cost. For example, the thickness of the first insulating layer 12 is 350 nm to reduce the manufacturing cost while ensuring the insulation performance.

[0205] Figure 23 FIG. is a partial cross-sectional structural schematic diagram of another organic light-emitting display device provided by an embodiment of the present invention. As Figure 23 shown, optionally, the substrate 10 includes a fourth insulating layer 102, and the fourth insulating layer 102 is in contact connection with the first insulating layer 12.

[0206] Among them, the material of the fourth insulating layer 102 includes at least one of silicon oxide (SiOx), silicon nitride (SiNx), and tetraethyl orthosilicate (TEOS), and can maintain good insulation performance in a high-temperature environment. At the same time, during the passivation process of the sidewall of the anode 11, the fourth insulating layer 102 will not be greatly affected.

[0207] For example, the material of the fourth insulating layer 102 is tetraethyl orthosilicate (TEOS) to have good chemical stability and can effectively prevent the penetration of moisture and oxygen, thereby extending the service life of the device, but it is not limited thereto.

[0208] Optionally, the thickness of the fourth insulating layer 102 is greater than or equal to 200 nm and less than or equal to 400 nm, so that the fourth insulating layer 102 can provide sufficient insulation performance to ensure the electrical isolation effect. At the same time, the excessive thickness of the fourth insulating layer 102 is avoided to increase the manufacturing cost. For example, the thickness of the fourth insulating layer 102 is 300 nm to reduce the manufacturing cost while ensuring the insulation performance.

[0209] Based on the same inventive concept, an embodiment of the present invention further provides an organic light-emitting display device, and the organic light-emitting display device is manufactured by the manufacturing method of any organic light-emitting display device provided by the above embodiment. Therefore, the organic light-emitting display device provided by the embodiment of the present invention has the technical effects of the technical solutions in any of the above embodiments, and the structures and explanations of the same or corresponding terms as those in the above embodiments will not be repeated here.

[0210] Specifically, as Figure 13 shown, the organic light-emitting display device provided by the embodiment of the present invention includes:

[0211] A substrate 10, and the substrate 10 includes a plurality of pixel regions 101 arranged at intervals.

[0212] An anode 11 disposed in the pixel region 101.

[0213] A passivation layer 40 disposed on the sidewall of the anode 11.

[0214] A first insulating layer 12 disposed between the anodes 11.

[0215] A partition structure 13 disposed on the first insulating layer 12, and the partition structure 13 is located between the pixel regions 101.

[0216] The organic light-emitting display device provided by the embodiment of the present invention forms a passivation layer on the sidewall of the anode, avoiding direct contact between the sidewall of the anode and the organic light-emitting layer, thereby preventing current from leaking from the sidewall of the anode to the organic light-emitting layer, reducing the risk of lateral leakage current, improving the display effect, and ensuring the current required for the pixels to emit light normally, which is beneficial to improving the accuracy of pixel brightness control.

[0217] As Figure 19 shown, optionally, the anode 11 includes a transparent anode layer 111, and the passivation layer 40 includes a first passivation layer 401 disposed on the sidewall of the transparent anode layer 111. The material of the transparent anode layer 111 includes indium tin oxide, and the material of the first passivation layer 401 includes at least one of SnO and In2O3.

[0218] Among them, the structure and function of the transparent anode layer 111 can refer to the above embodiments and will not be elaborated here.

[0219] In this embodiment, the material of the transparent anode layer 111 is indium tin oxide (ITO), which can have very high transparency and good conductivity. Further, by passivating the sidewall of the transparent anode layer 111 with oxygen plasma, tin oxide (SnO) and / or indium oxide (In2O3) are formed as the first passivation layer 401, and an effective insulating barrier can be formed to cover the sidewall of the transparent anode layer 111, thereby significantly reducing the lateral leakage current.

[0220] As Figure 19 shown, optionally, the anode 11 includes a reflective anode layer 112, and the passivation layer 40 includes a second passivation layer 402 disposed on the sidewall of the reflective anode layer 112. The material of the reflective anode layer 112 includes aluminum, and the material of the second passivation layer 402 includes aluminum oxide.

[0221] Among them, the structure and function of the reflective anode layer 112 can refer to the above embodiments and will not be elaborated here.

[0222] In this embodiment, the material of the reflective anode layer 112 is aluminum (Al), which can have good electrical conductivity. Further, by passivating the sidewalls of the reflective anode layer 112 with oxygen plasma to form aluminum oxide (Al2O3) as the second passivation layer 402, an effective insulating barrier can be formed to cover the sidewalls of the reflective anode layer 112, thereby significantly reducing the lateral leakage current.

[0223] Optionally, the thickness of the passivation layer 40 is greater than or equal to 5 nm and less than or equal to 100 nm.

[0224] Among them, by ensuring that the thickness of the passivation layer 40 is greater than or equal to 5 nm, the passivation layer 40 can have a sufficient thickness to effectively prevent current from leaking from the sidewalls of the anode 11, reduce the risk of lateral leakage current, and improve the display effect.

[0225] At the same time, setting the thickness of the passivation layer 40 to be less than or equal to 100 nm can effectively prevent current from leaking from the sidewalls of the anode 11, reduce the risk of lateral leakage current, and at the same time reduce the impact of the passivation layer 40 on the pixel aperture ratio, thereby ensuring the luminous efficiency and brightness of the organic light-emitting display device.

[0226] Optionally, the organic light-emitting display device can be a silicon-based micro-organic light-emitting display device (Silicon-based Micro-OLED Display). Among them, the silicon-based micro-organic light-emitting display device combines silicon-based integrated circuit (CMOS) technology and organic light-emitting diode (OLED) technology to directly integrate the OLED pixel array onto a silicon wafer to form a micro display.

[0227] The silicon-based micro-organic light-emitting display device has the characteristics of being small, thin, light, low-power consumption, high brightness, fast response speed, and wide viewing angle, and is suitable for applications in near-eye display devices, such as virtual reality (VR), augmented reality (AR) head-mounted devices, head-up display (HUD) systems, micro-projectors, and other portable electronic products with strict requirements for volume, weight, and energy consumption.

[0228] In the embodiment of the present invention, the substrate 10 can be a silicon-based driving backplane, and corresponding organic light-emitting layers 18 can be formed in each pixel region 101 on the substrate 10 through an etching process (such as a photolithography process including exposure and development steps). The process error can be controlled within about ±2 μm. Compared with forming the organic light-emitting layer 18 using a traditional fine metal mask (FMM), smaller pixel sizes and higher resolutions can be achieved, and the manufacturing cost is lower.

[0229] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps recited in the present invention can be executed in parallel, sequentially, or in a different order, as long as the desired results of the technical solution of the present invention can be achieved, and no limitation is imposed herein.

[0230] The above specific embodiments do not constitute a limitation on the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub - combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A manufacturing method of an organic light-emitting display device, characterized in that Including: Providing a substrate, the substrate including a plurality of pixel regions arranged at intervals; Forming an anode within the pixel regions; Performing a passivation treatment on the sidewalls of the anode to form a passivation layer at the sidewalls of the anode; Forming a first insulating layer between the anodes; Forming a partition structure on the first insulating layer, the partition structure being located between the pixel regions.

2. The manufacturing method according to claim 1, wherein: Forming the anode within the pixel regions includes: Forming an anode material layer on the substrate; Forming a mask on the anode material layer; Etching the anode material layer using the mask to form the anode; Performing a passivation treatment on the sidewalls of the anode includes: Performing a passivation treatment on the sidewalls of the anode using the mask.

3. The manufacturing method according to claim 2, wherein: The material of the mask includes at least one of silicon oxide and silicon nitride.

4. The manufacturing method according to claim 2, wherein: The thickness of the mask is greater than or equal to 20 nm and less than or equal to 100 nm.

5. The manufacturing method according to claim 1, wherein: The anode includes a transparent anode layer, and the passivation layer includes a first passivation layer; Performing a passivation treatment on the sidewalls of the anode to form a passivation layer at the sidewalls of the anode includes: Performing a passivation treatment on the sidewalls of the transparent anode layer using oxygen plasma to form the first passivation layer at the sidewalls of the transparent anode layer.

6. The manufacturing method according to claim 5, wherein: The oxygen flow rate introduced when performing the passivation treatment on the sidewalls of the transparent anode layer using oxygen plasma is greater than or equal to 20 sccm and less than or equal to 100 sccm.

7. The manufacturing method according to claim 5, wherein: The radio frequency power when performing the passivation treatment on the sidewalls of the transparent anode layer using oxygen plasma is greater than or equal to 50 W and less than or equal to 200 W.

8. The manufacturing method according to claim 5, wherein: The treatment time for performing the passivation treatment on the sidewalls of the transparent anode layer using oxygen plasma is greater than or equal to 60 seconds and less than or equal to 200 seconds.

9. The manufacturing method according to claim 5, wherein: The material of the transparent anode layer includes at least one of indium tin oxide and indium zinc oxide.

10. The manufacturing method according to claim 5, wherein: The material of the transparent anode layer includes indium tin oxide, and the material of the first passivation layer includes at least one of SnO and In2O3.

11. The manufacturing method according to claim 1, wherein: The anode includes a reflective anode layer, and the passivation layer includes a second passivation layer; Performing a passivation treatment on the sidewalls of the anode to form a passivation layer at the sidewalls of the anode includes: At a first temperature, performing a passivation treatment on the sidewalls of the reflective anode layer using oxygen plasma to form the second passivation layer at the sidewalls of the reflective anode layer; The first temperature is greater than or equal to 100 °C and less than or equal to 250 °C.

12. The manufacturing method according to claim 11, wherein when passivating the sidewalls of the reflective anode layer using the oxygen plasma, the oxygen flow rate introduced is greater than or equal to 300 sccm and less than or equal to 500 sccm.

13. The manufacturing method according to claim 11, wherein when passivating the sidewalls of the reflective anode layer using the oxygen plasma, the radio frequency power introduced is greater than or equal to 10 W and less than or equal to 60 W.

14. The manufacturing method according to claim 11, wherein the processing time for passivating the sidewalls of the reflective anode layer using the oxygen plasma is greater than or equal to 0.5 hours and less than or equal to 10 hours.

15. The manufacturing method according to claim 11, wherein the material of the reflective anode layer includes at least one of aluminum, silver, and gold.

16. The manufacturing method according to claim 11, wherein the material of the reflective anode layer includes aluminum, and the material of the second passivation layer includes aluminum oxide.

17. The manufacturing method according to claim 1, wherein the anode includes a reflective anode layer and a transparent anode layer located above the reflective anode layer; the passivation layer includes a first passivation layer and a second passivation layer; passivating the sidewalls of the anode to form the first passivation layer at the sidewalls of the transparent anode layer, including: at a second temperature, passivating the sidewalls of the transparent anode layer using oxygen plasma to form the first passivation layer at the sidewalls of the transparent anode layer; at a first temperature, passivating the sidewalls of the reflective anode layer using the oxygen plasma to form the second passivation layer at the sidewalls of the reflective anode layer; the first temperature is higher than the second temperature.

18. The manufacturing method according to any one of claims 1-17, wherein the thickness of the passivation layer is greater than or equal to 5 nm.

19. The manufacturing method according to any one of claims 1-17, wherein the thickness of the passivation layer is less than or equal to 100 nm.

20. The manufacturing method according to claim 1, wherein forming a partition structure on the first insulating layer, including: forming a second insulating layer on the first insulating layer; forming a third insulating layer on the second insulating layer, and the edge of the third insulating layer extends beyond the edge of the second insulating layer to form the partition structure.

21. An organic light-emitting display device, characterized in that, including: a substrate, the substrate includes a plurality of pixel regions arranged at intervals; an anode disposed in the pixel region; a passivation layer disposed at the sidewalls of the anode; a first insulating layer disposed between the anodes; a partition structure disposed on the first insulating layer, and the partition structure is located between the pixel regions.

22. The organic light emitting display device according to claim 21, wherein the anode includes a transparent anode layer, and the passivation layer includes a first passivation layer disposed at the sidewalls of the transparent anode layer; The material of the transparent anode layer includes indium tin oxide, and the material of the first passivation layer includes at least one of SnO and In2O3.

23. The organic light-emitting display device according to claim 21, wherein the anode includes a reflective anode layer, and the passivation layer includes a second passivation layer disposed on the sidewall of the reflective anode layer; the material of the reflective anode layer includes aluminum, and the material of the second passivation layer includes aluminum oxide.

24. The organic light-emitting display device according to claim 21, wherein the thickness of the passivation layer is greater than or equal to 5 nm and less than or equal to 100 nm.

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