Display panel and electronic equipment

Abstract

The embodiment of the invention provides a display panel and electronic equipment, and relates to the technical field of display. In the display panel, at least part of a film layer of a first conductive layer is made of a waterproof conductive material and / or a hydrophobic conductive material, that is, at least part of the film layer of the first conductive layer has a waterproof and / or hydrophobic function, so that the blocking capability of the first conductive layer to water vapor of an organic film layer in a substrate can be improved, the water vapor is prevented from invading a light-emitting device layer, and the display effect is improved. Normal display of the light-emitting device is ensured, the display panel has a good display effect, and the market competitiveness of the electronic equipment carrying the display panel is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and an electronic device. Background Art

[0002] Organic light emitting diodes (OLEDs) are considered the next generation display technology after liquid crystal displays (LCDs). Due to their exceptional color and image quality, they are widely used in a variety of consumer electronics products, including smartphones, TVs, laptops, desktop computers, in-car displays, and wearable devices, and have become a mainstream technology in display panels. Traditionally, in the production of display panels, the patterning of luminous pixels is typically achieved using a fine metal mask (FMM). FMM technology is mature and has extensive mass production experience. However, FMM technology also suffers from limited precision, high development costs, and long development cycles. The use of a fine metal mask eliminates the limitations of traditional OLED processes on display size, resolution, and other performance characteristics, offering the advantages of high performance, full-scale scalability, and agile delivery. Patents CN118251982A, CN116648095A, CN117062489A, CN118742138A, CN118678783A, CN118660598A, CN118675450A, CN118824188A, and CN118781966A describe the non-fine metal mask technology for reference.

[0003] However, the process performance of current OLED display products needs to be further improved. Summary of the Invention

[0004] In order to overcome the technical problems mentioned in the above technical background, the present application provides a display panel and an electronic device.

[0005] In a first aspect of the present application, a display panel is provided, comprising: substrate; an isolation structure, located on the substrate and enclosing an isolation opening on the substrate; a light-emitting device, at least partially located in the isolation opening in a direction away from the substrate, the light-emitting device comprising a first electrode, a light-emitting material layer, and a second electrode arranged in a stacked manner, wherein the second electrode is electrically connected to the isolation structure; The first electrode at least includes a first conductive layer close to the substrate, wherein the material of at least a portion of the film layer in the first conductive layer includes a water-isolating conductive material and / or a hydrophobic conductive material.

[0006] In one possible implementation of the present application, the first electrode further includes a second conductive layer and a third conductive layer, and in a direction away from the substrate, the first conductive layer, the second conductive layer, and the third conductive layer are stacked in sequence; The conductivity of the second conductive layer is stronger than that of the first conductive layer and the third conductive layer; The material of the second conductive layer includes metallic silver, and the material of the third conductive layer includes indium tin oxide; In a direction perpendicular to the plane of the substrate, the thickness of the second conductive layer is 800 angstroms to 1200 angstroms, and the thickness of the third conductive layer is 70 angstroms to 150 angstroms.

[0007] In a possible implementation of the present application, the first conductive layer includes a first conductive sublayer and a second conductive sublayer; The material of the first conductive sublayer includes indium tin oxide, and the material of the second conductive sublayer includes the water-isolating conductive material; The first conductive sublayer and the second conductive sublayer are stacked in a direction perpendicular to the plane of the substrate.

[0008] In a possible implementation of the present application, the water-isolating conductive material includes mutually doped indium gallium zinc oxide and metallic lanthanum, wherein the mass of the metallic lanthanum accounts for 0.5%-1% of the mass of the indium gallium zinc oxide.

[0009] In a possible implementation of the present application, in a direction perpendicular to the plane of the substrate, the thickness of the first conductive sublayer is 350 angstroms to 500 angstroms, and the thickness of the second conductive sublayer is 30 angstroms to 100 angstroms.

[0010] In a possible implementation of the present application, the first conductive layer includes a third conductive sublayer and a fourth conductive sublayer; The material of the third conductive sublayer includes indium tin oxide, and the fourth conductive sublayer includes the hydrophobic conductive material; The third conductive sublayer and the fourth conductive sublayer are stacked in a direction perpendicular to the plane of the substrate.

[0011] In a possible implementation of the present application, the hydrophobic conductive material includes a hydrophobic gel and nano-metal particles filled in the hydrophobic gel; The nano-metal particles include at least one of nano-metal zinc particles and nano-metal copper particles.

[0012] In a possible implementation of the present application, in a direction perpendicular to the plane of the substrate, the thickness of the third conductive sublayer is 350 angstroms to 500 angstroms, and the thickness of the fourth conductive sublayer is 100 angstroms to 300 angstroms.

[0013] In one possible implementation manner of the present application, the first conductive layer includes a fifth conductive sublayer and a sixth conductive sublayer; The material of the fifth conductive sublayer includes the water-isolating conductive material; the material of the sixth conductive sublayer includes the hydrophobic conductive material; The fifth conductive sublayer and the sixth conductive sublayer are stacked in a direction perpendicular to the plane of the substrate; The water-isolating conductive material includes mutually doped indium gallium zinc oxide and metallic lanthanum, the mass of the metallic lanthanum accounts for 0.5%-1% of the mass of the indium gallium zinc oxide, and the hydrophobic conductive material includes a hydrophobic gel and nano-metal particles filled in the hydrophobic gel, wherein the nano-metal particles include at least one of nano-metal zinc particles and nano-metal copper particles.

[0014] In a possible implementation of the present application, the first conductive layer includes a seventh conductive sublayer, an eighth conductive sublayer, and a ninth conductive sublayer; The material of the seventh conductive sublayer includes indium tin oxide, the material of the eighth conductive sublayer includes the water-isolating conductive material, and the material of the ninth conductive sublayer includes the hydrophobic conductive material; In a direction perpendicular to the plane of the substrate, the eighth conductive sublayer, the seventh conductive sublayer, and the ninth conductive sublayer are stacked; or the seventh conductive sublayer, the eighth conductive sublayer, and the ninth conductive sublayer are stacked; The water-isolating conductive material includes mutually doped indium gallium zinc oxide and metallic lanthanum, the mass of the metallic lanthanum accounts for 0.5%-1% of the mass of the indium gallium zinc oxide, and the hydrophobic conductive material includes a hydrophobic gel and nano-metal particles filled in the hydrophobic gel, wherein the nano-metal particles include at least one of nano-metal zinc particles and nano-metal copper particles.

[0015] In a possible implementation of the present application, the material of the first conductive layer includes a conductive composite material of indium tin oxide and a hydrophobic material, wherein the hydrophobic material includes at least one of graphene and hexagonal boron nitride; In the conductive composite material, the mass ratio of the indium tin oxide to the hydrophobic material is 1:1.5-1:3.5.

[0016] In a possible implementation of the present application, in a direction perpendicular to the plane of the substrate, the thickness of the first conductive layer is 200 angstroms to 400 angstroms.

[0017] In one possible implementation of the present application, the display panel further includes a pixel defining layer, wherein the pixel defining layer is located on a side of the isolation structure facing the substrate, and the isolation structure is located on a side of the pixel defining layer away from the substrate; The pixel defining layer includes a pixel opening, the orthographic projection of the pixel opening on the substrate is located within the orthographic projection of the isolation opening on the substrate, and at least part of the light emitting device is located within the pixel opening; The pixel defining layer is an inorganic pixel defining layer; The pixel defining layer is a single-layer structure of silicon oxide or silicon nitride, or a stacked-layer structure formed alternately of silicon oxide and silicon nitride.

[0018] In a possible implementation of the present application, the display panel further includes a thin film encapsulation film layer, and the thin film encapsulation film layer is located on the light emitting side of the light emitting device; The thin film encapsulation film layer includes a first encapsulation layer, the first encapsulation layer includes a plurality of encapsulation units, and the encapsulation units are used to encapsulate the light-emitting device in the isolation opening; The thin film encapsulation film layer further includes a second encapsulation layer, the second encapsulation layer is located on a side of the encapsulation unit away from the substrate, and the second encapsulation layer at least covers the encapsulation unit; The thin film encapsulation layer further includes a third encapsulation layer, and the third encapsulation layer is located on a side of the second encapsulation layer away from the substrate; The first encapsulation layer and the third encapsulation layer are inorganic encapsulation layers, and the second encapsulation layer is an organic encapsulation layer.

[0019] In a second aspect of the present application, a display panel is further provided, comprising: substrate; a pixel defining layer, located on the substrate and enclosing a pixel opening on the substrate; a light-emitting device, at least partially located in the pixel opening and in a direction away from the substrate, the light-emitting device comprising a first electrode, a light-emitting material layer, and a second electrode, wherein the second electrode is at least partially exposed by the pixel opening; The first electrode at least includes a first conductive layer close to the substrate, wherein the material of at least a portion of the film layer in the first conductive layer includes a water-isolating conductive material and / or a hydrophobic conductive material.

[0020] In one possible implementation of the present application, the first conductive layer includes a first conductive sublayer and a second conductive sublayer, the material of the first conductive sublayer includes indium tin oxide, the material of the second conductive sublayer includes the water-blocking conductive material, and the first conductive sublayer and the second conductive sublayer are stacked in a direction perpendicular to the plane of the substrate; or, The material of the first conductive layer includes a conductive composite material of indium tin oxide and a hydrophobic material, wherein the hydrophobic material includes at least one of graphene and hexagonal boron nitride.

[0021] According to a third aspect of the present application, an electronic device is provided, comprising a display panel according to any possible implementation of the first aspect or the second aspect. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0023] Figure 1 A schematic diagram illustrating the positional relationship between the isolation structure and the isolation opening provided in this embodiment; Figure 2 Example Figure 1 One of the cross-sectional diagrams at the AA position; Figure 3 One of the schematic diagrams of the film layer structure of the first electrode provided in this embodiment is illustrated; Figure 4 The second schematic diagram of the film structure of the first electrode provided in this embodiment is illustrated; Figure 5 The third schematic diagram of the film structure of the first electrode provided in this embodiment is illustrated; Figure 6 The fourth schematic diagram of the film structure of the first electrode provided in this embodiment is illustrated; Figure 7 The fifth schematic diagram of the film structure of the first electrode provided in this embodiment is illustrated; Figure 8 The sixth schematic diagram of the film structure of the first electrode provided in this embodiment is illustrated; Figure 9 The seventh schematic diagram of the film structure of the first electrode provided in this embodiment is illustrated; Figure 10 The eighth schematic diagram of the film structure of the first electrode provided in this embodiment is illustrated; Figure 11 The ninth schematic diagram of the film structure of the first electrode provided in this embodiment is illustrated; Figure 12 Example Figure 1 The second cross-sectional diagram at the AA position; Figure 13 A schematic cross-sectional view of the isolation structure provided by this embodiment is illustrated; Figure 14 Another cross-sectional schematic diagram of the isolation structure provided by this embodiment is illustrated; Figure 15 Example Figure 1 The third cross-sectional diagram at the AA position; Figure 16 Example Figure 1 The fourth cross-sectional diagram at the AA position; Figure 17 A schematic diagram of a film layer structure of the display panel provided in this embodiment is illustrated.

[0024] Icons: 1-display panel; 11-substrate; 12-isolation structure; 1201-isolation opening; 121-first isolation portion; 122-second isolation portion; 123-third isolation portion; 13-light-emitting device; 131-first electrode; 1311-first conductive layer; 13111-first conductive sublayer; 13112-second conductive sublayer; 13113-third conductive sublayer; 13114-fourth conductive sublayer; 13115-fifth conductive sublayer sublayer; 13116-sixth conductive sublayer; 13117-seventh conductive sublayer; 13118-eighth conductive sublayer; 13119-ninth conductive sublayer; 1312-second conductive layer; 1313-third conductive layer; 132-luminescent material layer; 133-second electrode; 14-pixel defining layer; 1401-pixel opening; 161-first encapsulation layer; 1611-encapsulation unit; 162-second encapsulation layer; 163-third encapsulation layer. DETAILED DESCRIPTION

[0025] To make the objectives, technical solutions, and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Generally, the components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0026] In the description of this application, it should be noted that the terms "upper" and "lower" etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the product of the application is usually placed when in use. These are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they should not be understood as limitations on this application.

[0027] Increasing the density of light-emitting devices (i.e., pixel density) in display panels is an important way to improve display quality. However, current display panels manufactured using fine metal deposition mask (FMM) technology are currently unable to further increase the density of light-emitting devices due to technical limitations. After extensive research, the inventors discovered that, to address this technical issue, isolation structures can be incorporated into some display panels. During the full-layer vapor deposition of the light-emitting material layer and electrodes, the light-emitting material layer and electrodes can be disconnected at the isolation structure. Through multiple vapor deposition and etching processes, light-emitting devices of different colors can be formed in different isolation openings. This process is also known as light-emitting device patterning.

[0028] In the above-mentioned display panel, there is a problem that some light-emitting devices display dark spots, which will affect the overall display effect of the display panel, and further affect the consumer's experience of use, and reduce the market competitiveness of electronic products equipped with the display panel. In order to solve the above-mentioned problems, the inventors innovatively designed the following technical solutions, and the specific implementation scheme of this application will be described in detail below with reference to the accompanying drawings. It should be noted that the defects existing in the above-mentioned solutions in the prior art are the results obtained by the inventors after practice and careful research. Therefore, the discovery process of the above-mentioned technical problems and the solutions proposed in this embodiment below for the above-mentioned problems should all be the contributions made by the inventors to this application in the process of invention and creation, and should not be understood as technical contents known to those skilled in the art.

[0029] Please refer to Figure 1 and Figure 2 , Figure 1 The schematic diagram of the distribution of the isolation structure and the isolation opening is shown as an example. Figure 2 Example Figure 1 Schematic cross-sectional view along the AA direction. In this embodiment, the display panel 1 includes a substrate 11, an isolation structure 12, and a light-emitting device 13. The substrate 11 includes a substrate and an array drive layer formed on the substrate. The array drive layer includes at least a plurality of stacked metal layers and an insulating layer located between adjacent metal layers. A pixel circuit for driving the light-emitting device 13 to emit light is formed in the array drive layer. The isolation structure 12 is located on one side of the substrate 11. The isolation structure 12 encloses an isolation opening 1201 on the substrate 11. The isolation structure 12 forms an undercut structure, through which the light-emitting device layer (such as the light-emitting material layer and the electrode layer) evaporated on the entire surface can be disconnected at this position, so as to facilitate the independent formation of the film layer of the light-emitting device in different isolation openings 1201.

[0030] The light-emitting devices 13 are at least partially located within the corresponding isolation openings 1201. The light-emitting devices 13 correspond one-to-one to the isolation openings 1201, with one light-emitting device 13 corresponding to one isolation opening 1201. The display panel 1 includes light-emitting devices 13 of multiple different luminous colors. For example, the display panel 1 includes a red light-emitting device, a blue light-emitting device, and a green light-emitting device. Adjacent red light-emitting devices, blue light-emitting devices, and green light-emitting devices can form a pixel unit. By controlling the luminance of the red light-emitting device, blue light-emitting device, and green light-emitting device in each pixel unit, the display brightness and color of each pixel unit can be controlled, thereby realizing the display of an image on the display panel 1.

[0031] In the direction away from the substrate 11 (Z direction in the figure), the light-emitting device 13 includes a first electrode 131, a light-emitting material layer 132 and a second electrode 133 stacked in sequence. In this embodiment, the first electrode 131 can be the anode of the light-emitting device 13, and the second electrode 133 can be the cathode of the light-emitting device 13, wherein the second electrode 133 is electrically connected to the isolation structure 12.

[0032] In this embodiment, the first electrode 131 includes at least a first conductive layer 1311 on a side close to the substrate 11. At least a portion of the first conductive layer 1311 is made of a water-blocking conductive material and / or a hydrophobic conductive material. That is, at least a portion of the first conductive layer 1311 has water-blocking and / or hydrophobic properties.

[0033] The inventors discovered that the main reason for the dark spot defects in the light-emitting device 13 is that water vapor in the organic film layer (for example, the planarization layer) in the substrate 11 passes through the first electrode 131 and enters the light-emitting material layer 132. After analyzing the structure of the first electrode 131, it was found that the first electrode 131 includes multiple conductive film layers. For example, two conductive film layers are stacked on the first conductive layer 1311. Among them, the conductive film layer on the side away from the substrate 11 is easily punctured due to the migration of metal in the intermediate conductive film layer in the subsequent high-temperature process. As a result, only the first conductive layer 1311 on the side close to the substrate 11 in the first electrode 131 has the function of isolating water vapor. However, the first conductive layer 1311 alone cannot completely isolate water vapor, which will cause water vapor to invade the light-emitting material layer 132 and eventually corrode the light-emitting material layer 132, resulting in dark spot defects in the light-emitting device 13.

[0034] In the above-mentioned structure of this embodiment, at least part of the film layer of the first conductive layer 1311 is made of water-proof conductive material and / or hydrophobic conductive material, that is, at least part of the film layer in the first conductive layer 1311 has water-proof and / or hydrophobic functions, which can increase the first conductive layer 1311's ability to block water vapor in the organic film layer in the substrate 11, avoid water vapor invading the light-emitting device layer, ensure that the light-emitting device 13 can display normally, and the display panel 1 has a good display effect, thereby improving the market competitiveness of electronic devices equipped with the display panel 1.

[0035] Further, please refer again to Figure 2 The first electrode 131 further includes a second conductive layer 1312 and a third conductive layer 1313. In a direction away from the substrate 11 (Z direction in the figure), the first conductive layer 1311, the second conductive layer 1312 and the third conductive layer 1313 are stacked in sequence.

[0036] In this embodiment, in the sandwich structure formed by the first conductive layer 1311, the second conductive layer 1312 and the third conductive layer 1313, the conductivity of the second conductive layer 1312 is stronger than the conductivity of the first conductive layer 1311 and the third conductive layer 1313. The conductivity of the first electrode 131 is mainly determined by the second conductive layer 1312, and the first conductive layer 1311 and the third conductive layer 1313 protect the second conductive layer 1312.

[0037] Illustratively, the material of the second conductive layer 1312 includes metallic silver, and the material of the third conductive layer 1313 includes indium tin oxide (ITO).

[0038] In this embodiment, in a direction perpendicular to the plane of the substrate 11, the thickness d1 of the second conductive layer 1312 is 800 angstroms to 1200 angstroms, and the thickness d2 of the third conductive layer 1313 is 70 angstroms to 150 angstroms. For example, the thickness d1 of the second conductive layer 1312 includes 800 angstroms, 805 angstroms, 820 angstroms, 850 angstroms, 900 angstroms, 950 angstroms, 980 angstroms, 1020 angstroms, 1050 angstroms, 1070 angstroms, 1100 angstroms, 1150 angstroms, or 1200 angstroms; the thickness d2 of the third conductive layer 1313 includes 70 angstroms, 72 angstroms, 75 angstroms, 80 angstroms, 88 angstroms, 95 angstroms, 102 angstroms, 110 angstroms, 108 angstroms, 116 angstroms, 123 angstroms, 135 angstroms, 140 angstroms, 146 angstroms, or 150 angstroms.

[0039] Please refer to Figure 3 or Figure 4In one implementation of this embodiment, the first conductive layer 1311 includes a first conductive sub-layer 13111 and a second conductive sub-layer 13112. The material of the first conductive sub-layer 13111 includes indium tin oxide, and the material of the second conductive sub-layer 13112 includes a water-proof conductive material, that is, the first conductive sub-layer 13111 can be an indium tin oxide layer, and the second conductive sub-layer 13112 can be a water-proof conductive layer.

[0040] In a direction perpendicular to the plane of the substrate 11, the first conductive sublayer 13111 and the second conductive sublayer 13112 are stacked, that is, in a direction away from the substrate 11, the first conductive sublayer 13111 and the second conductive sublayer 13112 are stacked (e.g., Figure 3 As shown), the second conductive sublayer 13112 and the first conductive sublayer 13111 can also be stacked (as shown Figure 4 shown).

[0041] In this embodiment, the water-insulating conductive material includes mutually doped indium gallium zinc oxide (IGZO) and metal lanthanum (La), in which indium gallium zinc oxide is the main component material and metal lanthanum is the doping material, wherein the mass of metal lanthanum accounts for 0.5%-1% of the mass of indium gallium zinc oxide. Exemplarily, the mass of metal lanthanum accounts for 0.5%, 0.51%, 0.56%, 0.60%, 0.63%, 0.67%, 0.71%, 0.78%, 0.82%, 0.86%, 0.91%, 0.96%, 0.99% or 1% of the mass of indium gallium zinc oxide.

[0042] In this embodiment, please refer to Figure 3 In a direction perpendicular to the plane of the substrate 11, the thickness d31 of the first conductive sublayer 13111 is 350 angstroms to 500 angstroms, and the thickness d32 of the second conductive sublayer 13112 is 30 angstroms to 100 angstroms. For example, the thickness d31 of the first conductive sublayer 13111 includes 350 angstroms, 355 angstroms, 365 angstroms, 383 angstroms, 392 angstroms, 410 angstroms, 436 angstroms, 452 angstroms, 463 angstroms, 485 angstroms, 492 angstroms, or 500 angstroms, and the thickness d32 of the second conductive sublayer 13112 includes 30 angstroms, 32 angstroms, 35 angstroms, 41 angstroms, 46 angstroms, 52 angstroms, 61 angstroms, 70 angstroms, 75 angstroms, 83 angstroms, 90 angstroms, 94 angstroms, or 100 angstroms.

[0043] Please refer to Figure 5 or Figure 6In another implementation of this embodiment, the first conductive layer 1311 includes a third conductive sublayer 13113 and a fourth conductive sublayer 13114. The material of the third conductive sublayer 13113 includes indium tin oxide, and the fourth conductive sublayer 13114 includes a hydrophobic conductive material. That is, the third conductive sublayer 13113 can be an indium tin oxide layer, and the fourth conductive sublayer 13114 can be a hydrophobic conductive material.

[0044] In a direction perpendicular to the plane of the substrate 11, the third conductive sublayer 13113 and the fourth conductive sublayer 13114 are stacked, that is, in a direction away from the substrate 11, the third conductive sublayer 13113 and the fourth conductive sublayer 13114 are stacked (such as Figure 5 As shown), the fourth conductive sublayer 13114 and the third conductive sublayer 13113 can also be stacked (as shown Figure 6 shown).

[0045] In this embodiment, the hydrophobic conductive material includes a hydrophobic gel and nano-metal particles filled in the hydrophobic gel, wherein the nano-metal particles include nano-metal zinc particles or nano-metal copper particles.

[0046] In this embodiment, please refer to Figure 5 As shown, in a direction perpendicular to the plane of the substrate 11, the thickness d33 of the third conductive sublayer 13113 is 350 angstroms to 500 angstroms, and the thickness d34 of the fourth conductive sublayer 13114 is 100 angstroms to 300 angstroms. For example, the thickness d33 of the third conductive sublayer 13113 includes 350 angstroms, 355 angstroms, 365 angstroms, 383 angstroms, 392 angstroms, 410 angstroms, 436 angstroms, 452 angstroms, 463 angstroms, 485 angstroms, 492 angstroms, or 500 angstroms, and the thickness d34 of the fourth conductive sublayer 13114 includes 100 angstroms, 105 angstroms, 116 angstroms, 135 angstroms, 158 angstroms, 187 angstroms, 200 angstroms, 215 angstroms, 236 angstroms, 258 angstroms, 271 angstroms, 280 angstroms, 295 angstroms, or 300 angstroms.

[0047] Please refer to Figure 7 or Figure 8 In another implementation of this embodiment, the first conductive layer 13111 includes a fifth conductive sub-layer 13115 and a sixth conductive sub-layer 13116, the material of the fifth conductive sub-layer 13115 includes a water-blocking conductive material, and the material of the sixth conductive sub-layer 13116 includes a hydrophobic conductive material, that is, the fifth conductive sub-layer 13115 can be a water-blocking conductive layer, and the sixth conductive sub-layer 13116 can be a hydrophobic conductive layer.

[0048] In a direction perpendicular to the plane of the substrate 11, the fifth conductive sublayer 13115 and the sixth conductive sublayer 13116 are stacked, that is, in a direction away from the substrate 11, the fifth conductive sublayer 13115 and the sixth conductive sublayer 13116 can be stacked (e.g. Figure 8 As shown), the sixth conductive sublayer 13116 and the fifth conductive sublayer 13115 can also be stacked (as shown Figure 7 shown).

[0049] In this embodiment, the water-blocking conductive material includes inter-doped indium gallium zinc oxide (IGZO) and lanthanum (La). Indium gallium zinc oxide is the primary component of the water-blocking conductive material, and lanthanum is the dopant. The mass of lanthanum accounts for 0.5%-1% of the mass of indium gallium zinc oxide. For example, the mass of lanthanum accounts for 0.5%, 0.51%, 0.56%, 0.60%, 0.63%, 0.67%, 0.71%, 0.78%, 0.82%, 0.86%, 0.91%, 0.96%, 0.99%, or 1% of the mass of indium gallium zinc oxide. The hydrophobic conductive material includes a hydrophobic gel and nano-metal particles filled in the hydrophobic gel. The nano-metal particles include at least one of nano-metal zinc particles and nano-metal copper particles.

[0050] Please refer to Figure 9 or Figure 10 In another implementation of the present embodiment, the first conductive layer 1311 includes a seventh conductive sub-layer 13117, an eighth conductive sub-layer 13118 and a ninth conductive sub-layer 13119, the material of the seventh conductive sub-layer 13117 includes indium tin oxide, the material of the eighth conductive sub-layer 13118 includes a water-blocking conductive material, and the material of the ninth conductive sub-layer 13119 includes a hydrophobic conductive material, that is, the seventh conductive sub-layer 13117 can be an indium tin oxide layer, the eighth conductive sub-layer 13118 can be a water-blocking conductive layer, and the ninth conductive sub-layer 13119 can be a hydrophobic conductive layer.

[0051] In a direction perpendicular to the plane of the substrate 11, the eighth conductive sublayer 13118, the seventh conductive sublayer 13117 and the ninth conductive sublayer 13119 are stacked (eg, Figure 9 As shown), or, the seventh conductive sublayer 13117, the eighth conductive sublayer 13118 and the ninth conductive sublayer 13119 are stacked (as shown Figure 10 It is understood that the above two stacking methods are merely examples, and the three film layers may also be stacked in any other order.

[0052] In this embodiment, the water-blocking conductive material includes inter-doped indium gallium zinc oxide (IGZO) and lanthanum (La). Indium gallium zinc oxide is the primary component of the water-blocking conductive material, and lanthanum is the dopant. The mass of lanthanum accounts for 0.5%-1% of the mass of indium gallium zinc oxide. For example, the mass of lanthanum accounts for 0.5%, 0.51%, 0.56%, 0.60%, 0.63%, 0.67%, 0.71%, 0.78%, 0.82%, 0.86%, 0.91%, 0.96%, 0.99%, or 1% of the mass of indium gallium zinc oxide. The hydrophobic conductive material includes a hydrophobic gel and nano-metal particles filled in the hydrophobic gel. The nano-metal particles include at least one of nano-metal zinc particles and nano-metal copper particles.

[0053] Please refer to Figure 11 In another implementation of this embodiment, the material of the first conductive layer 1311 includes a conductive composite material of indium tin oxide and a hydrophobic material, wherein the hydrophobic material includes at least one of graphene and hexagonal boron nitride.

[0054] In the conductive composite material layer, the mass ratio of indium tin oxide to the hydrophobic material is 1:1.5-1:3.5. Exemplarily, the mass ratio of indium tin oxide to the hydrophobic material includes 1:1.5, 1:1.6, 1:1.65, 1:1.85, 1:2, 1:2.25, 1:2.5, 1:2.75, 1:3, 1:3.15, 1:3.35 or 1:3.5, etc.

[0055] In this embodiment, please refer to Figure 11 , in a direction perpendicular to the plane of the substrate 11, the thickness d35 of the first conductive layer is 200 angstroms to 400 angstroms. Exemplarily, the thickness d35 of the first conductive layer includes 200 angstroms, 205 angstroms, 220 angstroms, 235 angstroms, 261 angstroms, 287 angstroms, 300 angstroms, 315 angstroms, 336 angstroms, 358 angstroms, 371 angstroms, 380 angstroms, 395 angstroms or 400 angstroms, etc.

[0056] For further information, please refer to Figure 12 The display panel 1 further includes a pixel defining layer 14. The pixel defining layer 14 is located on one side of the substrate 11. The isolation structure 12 is located on the side of the pixel defining layer 14 away from the substrate 11. The pixel defining layer 14 includes a plurality of pixel openings 1401. In this embodiment, the pixel defining layer 14 can be an organic pixel defining layer or an inorganic pixel defining layer. Preferably, the pixel defining layer 14 is an inorganic pixel defining layer. When the pixel defining layer 14 is an inorganic pixel defining layer, the pixel defining layer 14 can be a single layer structure of silicon oxide (SiOx) or silicon nitride (SiNx), or a stacked structure formed by alternating layers of silicon oxide and silicon nitride.

[0057] In this embodiment, the pixel opening 1401 communicates with the corresponding isolation opening 1201 . Exemplarily, the orthographic projection of the pixel opening 1401 on the substrate 11 is located within the orthographic projection of the isolation opening 1201 on the substrate 11 . At least part of the light emitting device 13 is located within the corresponding pixel opening 1401 .

[0058] For further information, please refer to Figure 13 The isolation structure 12 includes a first isolation portion 121 and a second isolation portion 122 stacked in sequence. The orthographic projection of the first isolation portion 121 on the substrate 11 is located within the orthographic projection of the second isolation portion 122 on the substrate 11. The second isolation portion 122 extends relative to the first isolation portion 121 toward the corresponding isolation opening 1201. In a cross section perpendicular to the plane of the substrate 11 and passing through the center of the isolation opening 1201, the cross section of the isolation structure 12 may be T-shaped. The first isolation portion 121 is a conductive isolation portion, and the second electrode 133 may be electrically connected to the first isolation portion 121. Exemplarily, the second electrode 133 achieves electrical connection by overlapping the first isolation portion 121.

[0059] For further information, please refer to Figure 14 In this embodiment, the isolation structure 12 further includes a third isolation portion 123. In the direction away from the substrate 11, the third isolation portion 123, the first isolation portion 121 and the second isolation portion 122 are stacked in sequence. The orthographic projection of the first isolation portion 121 on the substrate 11 may be located within the orthographic projection of the third isolation portion 123 on the substrate 11. In a cross section perpendicular to the plane of the substrate 11 and passing through the center of the isolation opening 1201, the cross section of the isolation structure 12 may be I-shaped. The third isolation portion 123 is a conductive isolation portion, and the second electrode 133 may also be electrically connected to the third isolation portion 123. Exemplarily, the second electrode 133 is electrically connected by overlapping with the third isolation portion 123.

[0060] Optionally, the material of the first isolation portion 121 includes aluminum, silver, or copper, the material of the second isolation portion 122 includes titanium or molybdenum, and the material of the third isolation portion 123 includes molybdenum or titanium.

[0061] For further information, please refer to Figure 15 The display panel 1 further includes a thin-film encapsulation layer, which is located on the light-emitting side of the light-emitting device 13. The thin-film encapsulation layer includes a first encapsulation layer 161, which includes a plurality of encapsulation units 1611. Different encapsulation units 1611 are used to encapsulate light-emitting devices 13 within different isolation openings 1201. For example, two adjacent encapsulation units 1611 for encapsulating light-emitting devices 13 of different colors are disconnected on the side of the isolation structure 12 away from the substrate 11; two adjacent encapsulation units 1611 for encapsulating light-emitting devices of the same color may be connected to each other on the side of the isolation structure 12 away from the substrate 11.

[0062] For further information, please refer to Figure 16 In this embodiment, the thin film encapsulation film layer further includes a second encapsulation layer 162 . The second encapsulation layer 162 is located on a side of the encapsulation unit 1611 away from the substrate 11 . The second encapsulation layer 162 at least covers the encapsulation unit 1611 .

[0063] The second encapsulation layer 162 has a flat surface on a side away from the substrate 11 .

[0064] Further, please refer again to Figure 16 The thin film encapsulation layer further includes a third encapsulation layer 163 . The third encapsulation layer 163 is located on a side of the second encapsulation layer 162 away from the substrate 11 .

[0065] Optionally, the first encapsulation layer 161 and the third encapsulation layer 163 are inorganic encapsulation layers, and the second encapsulation layer 162 is an organic encapsulation layer. For example, the first encapsulation layer 161 and the third encapsulation layer 163 can be formed by chemical vapor deposition (CVD), and the second encapsulation layer 162 can be formed by inkjet printing (IJP).

[0066] It is understandable that the display panel 1 may also include a touch function layer, an optical adhesive layer, a polarizer, a cover plate and other film layers stacked in sequence on the side of the third packaging layer 163 away from the substrate 11. The above film layers are conventional film layers of the display panel and will not be described in detail here.

[0067] Based on the same inventive concept, the present application also provides a display panel. Figure 17 The display panel 1 includes a substrate 11, a pixel defining layer 14, and light-emitting devices 13. The substrate 11 includes a base and an array drive layer formed on the base. The array drive layer includes at least a plurality of stacked metal layers and an insulating layer located between adjacent metal layers. The array drive layer includes pixel circuits for driving the light-emitting devices 13 to emit light. The pixel defining layer 14 is located on the substrate 11 and encloses pixel openings 1401 on the substrate 11. The light-emitting devices 13 are at least partially located within corresponding pixel openings 1401. There is a one-to-one correspondence between the light-emitting devices 13 and the pixel openings 1401, with one light-emitting device 13 corresponding to one pixel opening 1401.

[0068] In the direction away from the substrate 11 (Z direction in the figure), the light-emitting device 13 includes a first electrode 131, a light-emitting material layer 132 and a second electrode 133 stacked in sequence. In this embodiment, the first electrode 131 can be an anode of the light-emitting device 13, and the second electrode 133 can be a cathode of the light-emitting device 13, wherein the second electrode 133 is at least partially exposed from the pixel opening 1401.

[0069] In this embodiment, the first electrode 131 includes at least a first conductive layer 1311 on a side close to the substrate 11. At least a portion of the first conductive layer 1311 is made of a water-blocking conductive material and / or a hydrophobic conductive material. That is, at least a portion of the first conductive layer 1311 has water-blocking and / or hydrophobic properties.

[0070] At least part of the film layer of the first conductive layer 1311 is made of water-proof conductive material and / or hydrophobic conductive material, that is, at least part of the film layer in the first conductive layer 1311 has water-proof and / or hydrophobic functions, which can increase the first conductive layer 1311's ability to block water vapor in the organic film layer in the substrate 11, avoid water vapor invading the light-emitting device layer, ensure that the light-emitting device 13 can display normally, and the display panel 1 has a good display effect, thereby improving the market competitiveness of electronic devices equipped with the display panel 1.

[0071] Further, please refer again to Figure 17 The first electrode 131 further includes a second conductive layer 1312 and a third conductive layer 1313 . In a direction away from the substrate 11 , the first conductive layer 1311 , the second conductive layer 1312 and the third conductive layer 1313 are stacked in sequence.

[0072] In this embodiment, in the sandwich structure formed by the first conductive layer 1311, the second conductive layer 1312 and the third conductive layer 1313, the conductivity of the second conductive layer 1312 is stronger than the conductivity of the first conductive layer 1311 and the third conductive layer 1313. The conductivity of the first electrode 131 is mainly determined by the second conductive layer 1312, and the first conductive layer 1311 and the third conductive layer 1313 protect the second conductive layer 1312.

[0073] Illustratively, the material of the second conductive layer 1312 includes metallic silver, and the material of the third conductive layer 1313 includes indium tin oxide (ITO).

[0074] In this embodiment, the thickness of the second conductive layer 1312 is 800 angstroms to 1200 angstroms, and the thickness of the third conductive layer 1313 is 70 angstroms to 150 angstroms in a direction perpendicular to the plane of the substrate 11. For example, the thickness of the second conductive layer 1312 includes 800 angstroms, 805 angstroms, 820 angstroms, 850 angstroms, 900 angstroms, 950 angstroms, 980 angstroms, 1020 angstroms, 1050 angstroms, 1070 angstroms, 1100 angstroms, 1150 angstroms, or 1200 angstroms; the thickness of the third conductive layer 1313 includes 70 angstroms, 72 angstroms, 75 angstroms, 80 angstroms, 88 angstroms, 95 angstroms, 102 angstroms, 110 angstroms, 108 angstroms, 116 angstroms, 123 angstroms, 135 angstroms, 140 angstroms, 146 angstroms, or 150 angstroms.

[0075] Further, please refer again to Figure 3 or Figure 4 In one implementation of this embodiment, the first conductive layer 1311 includes a first conductive sub-layer 13111 and a second conductive sub-layer 13112. The material of the first conductive sub-layer 13111 includes indium tin oxide, and the material of the second conductive sub-layer 13112 includes a water-proof conductive material, that is, the first conductive sub-layer 13111 can be an indium tin oxide layer, and the second conductive sub-layer 13112 can be a water-proof conductive layer.

[0076] In a direction perpendicular to the plane of the substrate 11, the first conductive sublayer 13111 and the second conductive sublayer 13112 are stacked, that is, in a direction away from the substrate 11, the first conductive sublayer 13111 and the second conductive sublayer 13112 are stacked (e.g., Figure 3 As shown), the second conductive sublayer 13112 and the first conductive sublayer 13111 can also be stacked (as shown Figure 4 shown).

[0077] In this embodiment, the water-insulating conductive material includes mutually doped indium gallium zinc oxide (IGZO) and metal lanthanum (La), in which indium gallium zinc oxide is the main component material and metal lanthanum is the doping material, wherein the mass of metal lanthanum accounts for 0.5%-1% of the mass of indium gallium zinc oxide. Exemplarily, the mass of metal lanthanum accounts for 0.5%, 0.51%, 0.56%, 0.60%, 0.63%, 0.67%, 0.71%, 0.78%, 0.82%, 0.86%, 0.91%, 0.96%, 0.99% or 1% of the mass of indium gallium zinc oxide.

[0078] Further, please refer again to Figure 11 In another implementation of this embodiment, the material of the first conductive layer 1311 includes a conductive composite material of indium tin oxide and a hydrophobic material, wherein the hydrophobic material includes at least one of graphene and hexagonal boron nitride.

[0079] In the conductive composite material layer, the mass ratio of indium tin oxide to the hydrophobic material is 1:1.5-1:3.5. Exemplarily, the mass ratio of indium tin oxide to the hydrophobic material includes 1:1.5, 1:1.6, 1:1.65, 1:1.85, 1:2, 1:2.25, 1:2.5, 1:2.75, 1:3, 1:3.15, 1:3.35 or 1:3.5, etc.

[0080] In this embodiment, please refer to Figure 11, in a direction perpendicular to the plane of the substrate 11, the thickness d35 of the first conductive layer is 200 angstroms to 400 angstroms. Exemplarily, the thickness d35 of the first conductive layer includes 200 angstroms, 205 angstroms, 220 angstroms, 235 angstroms, 261 angstroms, 287 angstroms, 300 angstroms, 315 angstroms, 336 angstroms, 358 angstroms, 371 angstroms, 380 angstroms, 395 angstroms or 400 angstroms, etc.

[0081] Based on the same inventive concept, an embodiment of the present application also provides an electronic device, which includes the display panel provided in the embodiment of the present application. The electronic device may include a smart phone, a tablet computer, a car display device, a smart wearable device, a television, a laptop computer, and other devices with display functions.

[0082] The embodiments of the present application provide a display panel and an electronic device. In the display panel, at least part of the film layer of the first conductive layer is made of a water-proof conductive material and / or a hydrophobic conductive material, that is, at least part of the film layer in the first conductive layer has a water-proof and / or hydrophobic function. In this way, the ability of the first conductive layer to block water vapor in the organic film layer in the substrate can be increased, thereby preventing water vapor from invading the light-emitting device layer, ensuring that the light-emitting device can display normally, and the display panel has a good display effect, thereby improving the market competitiveness of electronic devices equipped with the display panel.

[0083] The above description is merely a preferred embodiment of the present application and is not intended to limit the present application. Various modifications and variations are possible for those skilled in the art. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present application shall be included within the scope of protection of the present application.

Claims

1. A display panel, characterized in that: The display panel includes: substrate; an isolation structure, located on the substrate and enclosing an isolation opening on the substrate; a light-emitting device, at least partially located in the isolation opening in a direction away from the substrate, the light-emitting device comprising a first electrode, a light-emitting material layer, and a second electrode arranged in a stacked manner, wherein the second electrode is electrically connected to the isolation structure; The first electrode at least includes a first conductive layer close to the substrate, wherein the material of at least a portion of the film layer in the first conductive layer includes a water-isolating conductive material and / or a hydrophobic conductive material.

2. The display panel according to claim 1, wherein The first electrode further includes a second conductive layer and a third conductive layer, and in a direction away from the substrate, the first conductive layer, the second conductive layer and the third conductive layer are stacked in sequence; The conductivity of the second conductive layer is stronger than that of the first conductive layer and the third conductive layer; The material of the second conductive layer includes metallic silver, and the material of the third conductive layer includes indium tin oxide; In a direction perpendicular to the plane of the substrate, the thickness of the second conductive layer is 800 angstroms to 1200 angstroms, and the thickness of the third conductive layer is 70 angstroms to 150 angstroms.

3. The display panel according to claim 2, wherein: The first conductive layer includes a first conductive sublayer and a second conductive sublayer; The material of the first conductive sublayer includes indium tin oxide, and the material of the second conductive sublayer includes the water-isolating conductive material; The first conductive sublayer and the second conductive sublayer are stacked in a direction perpendicular to the plane of the substrate.

4. The display panel according to claim 3, wherein: The water-isolating conductive material includes mutually doped indium gallium zinc oxide and metal lanthanum, wherein the mass of the metal lanthanum accounts for 0.5%-1% of the mass of the indium gallium zinc oxide.

5. The display panel according to claim 4, wherein: In a direction perpendicular to the plane of the substrate, the thickness of the first conductive sublayer is 350 angstroms to 500 angstroms, and the thickness of the second conductive sublayer is 30 angstroms to 100 angstroms.

6. The display panel according to claim 2, wherein: The first conductive layer includes a third conductive sublayer and a fourth conductive sublayer; The material of the third conductive sublayer includes indium tin oxide, and the fourth conductive sublayer includes the hydrophobic conductive material; The third conductive sublayer and the fourth conductive sublayer are stacked in a direction perpendicular to the plane of the substrate.

7. The display panel according to claim 6, wherein: The hydrophobic conductive material includes a hydrophobic gel and nano-metal particles filled in the hydrophobic gel; The nano-metal particles include at least one of nano-metal zinc particles and nano-metal copper particles.

8. The display panel according to claim 7, wherein: In a direction perpendicular to the plane of the substrate, the thickness of the third conductive sublayer is 350 angstroms to 500 angstroms, and the thickness of the fourth conductive sublayer is 100 angstroms to 300 angstroms.

9. The display panel according to claim 2, wherein: The first conductive layer includes a fifth conductive sublayer and a sixth conductive sublayer; The material of the fifth conductive sublayer includes the water-isolating conductive material; the material of the sixth conductive sublayer includes the hydrophobic conductive material; The fifth conductive sublayer and the sixth conductive sublayer are stacked in a direction perpendicular to the plane of the substrate; The water-isolating conductive material includes mutually doped indium gallium zinc oxide and metallic lanthanum, the mass of the metallic lanthanum accounts for 0.5%-1% of the mass of the indium gallium zinc oxide, and the hydrophobic conductive material includes a hydrophobic gel and nano-metal particles filled in the hydrophobic gel, wherein the nano-metal particles include at least one of nano-metal zinc particles and nano-metal copper particles.

10. The display panel according to claim 2, wherein: The first conductive layer includes a seventh conductive sublayer, an eighth conductive sublayer and a ninth conductive sublayer; The material of the seventh conductive sublayer includes indium tin oxide, the material of the eighth conductive sublayer includes the water-isolating conductive material, and the material of the ninth conductive sublayer includes the hydrophobic conductive material; In a direction perpendicular to the plane of the substrate, the eighth conductive sublayer, the seventh conductive sublayer, and the ninth conductive sublayer are stacked; or the seventh conductive sublayer, the eighth conductive sublayer, and the ninth conductive sublayer are stacked; The water-isolating conductive material includes mutually doped indium gallium zinc oxide and metallic lanthanum, the mass of the metallic lanthanum accounts for 0.5%-1% of the mass of the indium gallium zinc oxide, and the hydrophobic conductive material includes a hydrophobic gel and nano-metal particles filled in the hydrophobic gel, wherein the nano-metal particles include at least one of nano-metal zinc particles and nano-metal copper particles.

11. The display panel according to claim 2, wherein: The material of the first conductive layer includes a conductive composite material of indium tin oxide and a hydrophobic material, wherein the hydrophobic material includes at least one of graphene and hexagonal boron nitride; Preferably, in the conductive composite material, the mass ratio of the indium tin oxide to the hydrophobic material is 1:1.5-1:3.

5.

12. The display panel according to claim 11, wherein: In a direction perpendicular to the plane of the substrate, the thickness of the first conductive layer is 200 angstroms to 400 angstroms.

13. The display panel according to any one of claims 1 to 12, wherein: The display panel further includes a pixel defining layer, wherein the pixel defining layer is located on a side of the isolation structure facing the substrate, and the isolation structure is located on a side of the pixel defining layer away from the substrate; The pixel defining layer includes a pixel opening, the orthographic projection of the pixel opening on the substrate is located within the orthographic projection of the isolation opening on the substrate, and at least part of the light emitting device is located within the pixel opening; The pixel defining layer is an inorganic pixel defining layer; The pixel defining layer is a single-layer structure of silicon oxide or silicon nitride, or a stacked-layer structure formed alternately of silicon oxide and silicon nitride.

14. The display panel according to claim 13, wherein: The display panel further includes a thin film encapsulation film layer, and the thin film encapsulation film layer is located on the light emitting side of the light emitting device; The thin film encapsulation film layer includes a first encapsulation layer, the first encapsulation layer includes a plurality of encapsulation units, and the encapsulation units are used to encapsulate the light-emitting device in the isolation opening; The thin film encapsulation film layer further includes a second encapsulation layer, the second encapsulation layer is located on a side of the encapsulation unit away from the substrate, and the second encapsulation layer at least covers the encapsulation unit; The thin film encapsulation layer further includes a third encapsulation layer, and the third encapsulation layer is located on a side of the second encapsulation layer away from the substrate; The first encapsulation layer and the third encapsulation layer are inorganic encapsulation layers, and the second encapsulation layer is an organic encapsulation layer.

15. A display panel, characterized in that: The display panel includes: substrate; a pixel defining layer, located on the substrate and enclosing a pixel opening on the substrate; a light-emitting device, at least partially located in the pixel opening and in a direction away from the substrate, the light-emitting device comprising a first electrode, a light-emitting material layer, and a second electrode, wherein the second electrode is at least partially exposed by the pixel opening; The first electrode at least includes a first conductive layer close to the substrate, wherein the material of at least a portion of the film layer in the first conductive layer includes a water-isolating conductive material and / or a hydrophobic conductive material.

16. The display panel according to claim 15, wherein: The first conductive layer includes a first conductive sublayer and a second conductive sublayer, the material of the first conductive sublayer includes indium tin oxide, the material of the second conductive sublayer includes the water-blocking conductive material, and the first conductive sublayer and the second conductive sublayer are stacked in a direction perpendicular to the plane of the substrate; or The material of the first conductive layer includes a conductive composite material of indium tin oxide and a hydrophobic material, wherein the hydrophobic material includes at least one of graphene and hexagonal boron nitride.

17. An electronic device, characterized in that: The electronic device comprises the display panel according to any one of claims 1 to 16.

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