Perovskite photovoltaic module device detection method and perovskite photovoltaic module device

Abstract

The invention provides a perovskite photovoltaic module device detection method and a perovskite photovoltaic module device, belongs to the technical field of perovskite solar cells, and solves the problem that the existing photovoltaic module device detection method can only detect the overall average performance state of the photovoltaic module device. And targeted analysis cannot be carried out on each site and each area on the membrane surface. The method comprises the steps that a first perovskite photovoltaic module device is prepared according to preset preparation parameters, and the first perovskite photovoltaic module device comprises a plurality of sub-cells; performing a current density-voltage curve test on the plurality of sub-batteries to obtain a plurality of efficiency data; and evaluating the uniformity of the first perovskite photovoltaic module device according to the plurality of efficiency data to obtain the uniformity data of the first perovskite photovoltaic module device. According to the detection method, by qualitatively analyzing the uniformity of the module device, nondestructive detection of the device is achieved, the detection cost is reduced, and the detection efficiency is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of perovskite solar cells, and in particular to a perovskite photovoltaic module device detection method and a perovskite photovoltaic module device. Background Art

[0002] Perovskites are widely used as photoactive layer absorbers in solar cells. Compared to traditional solar cells, perovskite solar cells offer significant advantages in device structure, fabrication process, and material cost. Currently, perovskite solar cells are at a critical stage of industrialization. During the research and development of perovskite photovoltaic modules, uniformity testing of the module components is often performed to qualitatively analyze the perovskite crystal quality and the state of the functional layer film formation at various regions or locations on the device film surface.

[0003] Commonly used detection methods in the field of solar cells include photoluminescence (PL), electroluminescence (EL), light-induced current detection (LBIC), infrared imaging technology, etc. For example, PL and EL require the use of infrared imaging instruments for laser light source excitation or current injection excitation to obtain overall infrared imaging and thereby detect hidden defects in solar cells and modules. These detection methods generally have a more complicated analysis process, require the assistance of expensive instruments and equipment, and are difficult to achieve non-destructive testing. For printable mesoscopic perovskite photovoltaic modules with a special three-layer mesoporous membrane structure, the above methods cannot perform fast, low-cost and effective detection and analysis of the three-layer mesoporous membrane. Therefore, there is an urgent need to develop a fast and efficient detection method to determine the crystallization properties and film-forming state of the functional layer corresponding to each area and site on the membrane surface of the module device, so as to provide strong assistance for further optimizing the module performance. Summary of the Invention

[0004] The present invention provides a perovskite photovoltaic module device detection method and a perovskite photovoltaic module device, which solves the problem that the existing photovoltaic module device detection method can only detect the overall average performance status of the photovoltaic module device, cannot perform targeted analysis of each point and each area on the membrane surface, and is not conducive to subsequent performance optimization.

[0005] In order to solve the above technical problems, the technical solutions of the present invention are as follows:

[0006] An embodiment of the present invention provides a method for detecting a perovskite photovoltaic module device, comprising:

[0007] Prepare a first perovskite photovoltaic module device according to preset preparation parameters, wherein the first perovskite photovoltaic module device includes a plurality of sub-cells;

[0008] Performing a current density-voltage curve test on the plurality of sub-cells to obtain a plurality of efficiency data, wherein each efficiency data corresponds to one sub-cell;

[0009] Based on the multiple efficiency data, the uniformity of the first perovskite photovoltaic module device is evaluated to obtain the uniformity data of the first perovskite photovoltaic module device, wherein the uniformity data includes the relationship between the efficiency data of the sub-cells in the peripheral area of ​​the membrane surface of the first perovskite photovoltaic module device and the efficiency data of the sub-cells in the internal area of ​​the membrane surface of the first perovskite photovoltaic module device.

[0010] Optionally, preparing the first perovskite photovoltaic module device according to preset preparation parameters includes:

[0011] providing a conductive substrate;

[0012] forming a dense layer on the conductive substrate;

[0013] forming a plurality of first etching lines on the dense layer by laser etching, wherein the plurality of first etching lines penetrate the dense layer;

[0014] forming a mesoporous electron transport layer, an insulating spacer layer, and an electrode layer on the dense layer;

[0015] forming a plurality of third etching lines on the electrode layer by laser etching, wherein the plurality of third etching lines penetrate the mesoporous electron transport layer, the insulating spacer layer, and the electrode layer;

[0016] forming a plurality of fourth etching lines on the electrode layer by laser etching to obtain a substrate including a plurality of regions, wherein the plurality of fourth etching lines penetrate the mesoporous electron transport layer, the insulating spacer layer, the electrode layer, and the dense layer;

[0017] The substrate including the multiple regions is sintered, filled with a perovskite precursor solution, and annealed to obtain a first perovskite photovoltaic module device.

[0018] Optionally, the first etching lines are parallel to the third etching lines, the number of the first etching lines is equal to the number of the third etching lines, and a preset distance is maintained between adjacent first etching lines and third etching lines.

[0019] Optionally, the fourth etching lines are perpendicular to the first etching lines, each group of fourth etching lines includes two fourth etching lines, and a preset distance is maintained between the two fourth etching lines.

[0020] Optionally, the thickness of the dense layer is 1 to 1000 nm, and the dense layer is at least one of TiO2, SnO2, and ZnO;

[0021] The thickness of the mesoporous electron transport layer is 0.1 to 10 μm, and the mesoporous electron transport layer is at least one of TiO2, SnO2, and ZnO;

[0022] The thickness of the insulating spacer layer is 0.1 to 10 μm, and the insulating spacer layer is at least one of Al2O3, ZrO2, and MgO;

[0023] The thickness of the electrode layer is 1 to 1000 μm, and the electrode layer is at least one of C, Au, Ag, and Al.

[0024] Optionally, the first etched line has a line width of 0.1 to 1 mm and a depth of 1 to 1000 nm;

[0025] The third etched line has a line width of 0.1 to 1 mm and a depth of 1 to 1000 μm;

[0026] The fourth etched line has a line width of 0.1 to 1 mm and a depth of 1 to 1000 μm.

[0027] Optionally, a current density-voltage curve test is performed on the multiple sub-batteries to obtain multiple efficiency data, including:

[0028] The multiple sub-cells are numbered in order of rows and columns, and are tested at AM 1.5G 100mW·cm -2 Under test conditions simulating a solar light source, a current density-voltage curve test is performed on the plurality of sub-cells to obtain a plurality of efficiency data.

[0029] Optionally, evaluating the uniformity of the first perovskite photovoltaic module device according to the plurality of efficiency data to obtain uniformity data of the first perovskite photovoltaic module device includes:

[0030] dividing the plurality of sub-cells into outer sub-cells and inner sub-cells according to positions of the plurality of sub-cells;

[0031] Calculating average efficiency data of the outer sub-battery to obtain first average efficiency data;

[0032] Calculating average efficiency data of the inner sub-cell to obtain second average efficiency data;

[0033] The first average efficiency data and the second average efficiency data are compared to obtain uniformity data of the first perovskite photovoltaic module device.

[0034] Optionally, the method further includes:

[0035] Modifying the preset preparation parameters according to the uniformity data to obtain modified preparation parameters, wherein the modified preparation parameters are used to prepare a second perovskite photovoltaic module device;

[0036] When the efficiency data of the sub-cells in the outer area of ​​the membrane surface of the first perovskite photovoltaic module device is lower than the efficiency data of the sub-cells in the inner area of ​​the membrane surface of the first perovskite photovoltaic module device, the preset preparation parameters are modified to obtain modified preparation parameters, wherein the preset preparation parameters include the number of the multiple sub-cells, the number of openings in the annealing equipment, and the opening sealing performance of the annealing equipment.

[0037] An embodiment of the present invention further provides a perovskite photovoltaic module device, which is prepared by performing uniformity testing according to the above-mentioned perovskite photovoltaic module device testing method to obtain preparation optimization parameters.

[0038] The technical solution of the present invention includes at least the following effects:

[0039] The above-mentioned solution of the present invention prepares a first perovskite photovoltaic module device according to preset preparation parameters, wherein the first perovskite photovoltaic module device includes multiple sub-cells; current density-voltage curve tests are performed on the multiple sub-cells to obtain multiple efficiency data; and the uniformity of the first perovskite photovoltaic module device is evaluated based on the multiple efficiency data to obtain uniformity data of the first perovskite photovoltaic module device. The detection method of the present invention achieves non-destructive testing of the device by qualitatively analyzing the uniformity of the module device, reducing testing costs and improving testing efficiency. At the same time, the crystallization differences on the membrane surface can be clearly identified based on the performance distribution, facilitating targeted crystallization control and improving product quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 This is a flow chart of a perovskite photovoltaic module device detection method provided by an embodiment of the present invention;

[0041] Figure 2 1 is a planar schematic diagram of a perovskite photovoltaic module device provided by an embodiment of the present invention;

[0042] Figure 3 is a cross-sectional schematic diagram of a perovskite photovoltaic module device provided by an embodiment of the present invention;

[0043] Among them, 1, conductive substrate; 2, dense layer; 3, mesoporous electron transport layer; 4, insulating spacer layer; 5, electrode layer; P1, first etching line; P3, third etching line; P4, fourth etching line. DETAILED DESCRIPTION

[0044] Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.

[0045] like Figure 1 As shown, an embodiment of the present invention provides a method for detecting a perovskite photovoltaic module device, comprising:

[0046] Step 11, preparing a first perovskite photovoltaic module device according to preset preparation parameters, wherein the first perovskite photovoltaic module device includes a plurality of sub-cells;

[0047] Step 12: performing a current density-voltage curve test on the plurality of sub-cells to obtain a plurality of efficiency data, wherein each efficiency data corresponds to one sub-cell;

[0048] Step 13: Evaluate the uniformity of the first perovskite photovoltaic module device based on the multiple efficiency data to obtain the uniformity data of the first perovskite photovoltaic module device, wherein the uniformity data includes the relationship between the efficiency data of the sub-cells in the peripheral area of ​​the membrane surface of the first perovskite photovoltaic module device and the efficiency data of the sub-cells in the internal area of ​​the membrane surface of the first perovskite photovoltaic module device.

[0049] In this embodiment, on a clean substrate, the steps of depositing a perovskite layer and preparing electrodes are sequentially performed according to preset preparation parameters to form a perovskite photovoltaic module device comprising multiple sub-cells. A sub-cell refers to a basic unit in the module device that can independently perform photoelectric conversion.

[0050] Using a solar simulator combined with a current-voltage test system, each sub-cell in a perovskite photovoltaic module device is tested. The testing process includes applying different voltages to each sub-cell under standard test conditions, recording the corresponding current density, and plotting a current density-voltage (JV) curve. Key parameters such as open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and power conversion efficiency (PCE) are extracted from the JV curve to serve as efficiency data for each sub-cell.

[0051] The sub-cells are divided into the outer and inner regions of the membrane surface according to their location in the module device. The efficiency data of the sub-cells in these two regions are compared to evaluate the uniformity of the module device.

[0052] Calculate the mean, standard deviation and other statistical quantities of the sub-cell efficiency data in the outer and inner areas of the membrane surface, and analyze the differences between the two and their causes;

[0053] Based on the analysis results, uniformity data is generated that compares the sub-cell efficiency data in the peripheral area and the internal area of ​​the membrane surface, providing guidance for the optimization of subsequent preparation processes.

[0054] The above-described embodiment of the present invention converts a photovoltaic module into several experimental-grade sub-cells. This allows the performance distribution of the module to be determined from the performance distribution of the sub-cells. Furthermore, this performance distribution can be used to identify crystallization differences across the membrane surface, facilitating targeted crystallization control. This process is simple and easy to implement, identical to the original module process, and requires no additional testing methods. Furthermore, it eliminates the need for expensive instrumentation and sample preparation, making it a low-cost, rapid, and efficient testing method.

[0055] like Figure 2 As shown, in an optional embodiment proposed by the present invention, step 11 may include:

[0056] Step 111, providing a conductive substrate;

[0057] Step 112, forming a dense layer on the conductive substrate;

[0058] Step 113, forming a plurality of first etching lines on the dense layer by laser etching, wherein the plurality of first etching lines penetrate the dense layer;

[0059] Step 114, forming a mesoporous electron transport layer, an insulating spacer layer, and an electrode layer on the dense layer;

[0060] Step 115, forming a plurality of third etched lines on the electrode layer by laser etching, wherein the plurality of third etched lines penetrate the mesoporous electron transport layer, the insulating spacer layer, and the electrode layer;

[0061] Step 116, forming a plurality of fourth etch lines on the electrode layer by laser etching to obtain a substrate including a plurality of regions, wherein the plurality of fourth etch lines penetrate the mesoporous electron transport layer, the insulating spacer layer, the electrode layer, and the dense layer;

[0062] Step 117 , sintering the substrate including the multiple regions, filling it with a perovskite precursor solution, and annealing it to obtain a first perovskite photovoltaic module device.

[0063] In this embodiment, a dense layer is first prepared on a glass substrate having a conductive coating by a spray pyrolysis process to obtain a substrate A, wherein the dense layer is at least one of TiO2, SnO2, and ZnO;

[0064] A plurality of first etching lines (P1) are etched on substrate A using a laser to separate positive and negative electrodes, thereby obtaining substrate B;

[0065] A mesoporous electron transport layer is prepared on substrate B by screen printing. The mesoporous electron transport layer is at least one of TiO2, SnO2, and ZnO. After printing, the film surface is dried until it becomes flat and smooth, and then it is sintered at a constant high temperature to obtain substrate C. The mesoporous electron transport layer must be evenly centered on substrate B.

[0066] An insulating spacer layer is prepared on substrate C by screen printing and dried to obtain substrate D. The insulating spacer layer is at least one of Al2O3, ZrO2, and MgO. The insulating spacer layer must evenly cover the mesoporous electron transport layer.

[0067] An electrode layer is again prepared on substrate D by screen printing and dried to obtain substrate E. The electrode layer is at least one of C, Au, Ag, and Al. The carbon electrode needs to be printed on the entire surface and cover the central effective area of ​​the glass substrate, including the mesoporous electron transport layer and the insulating spacer layer.

[0068] Substrate E is laser-etched. First, multiple third etching lines (P3) are etched. The P3 etching lines are required to be parallel to P1, with a preset spacing between adjacent first and third etching lines. The depth is determined by the thickness of the electrode layer, and the number of first and third etching lines is equal. Subsequently, multiple groups of fourth etching lines (P4) are etched. P4 is used for patterned edge cleaning. Each group of P4 etching lines includes two lines, with a preset spacing between them. The depth is determined by the thickness of the conductive coating on the glass substrate. The rectangular area enclosed by the two P4 lines, P1, and P3 represents the photoactive area of ​​the experimental sub-cell. The final substrate F is obtained through P3 etching and P4 patterned edge cleaning.

[0069] P3 and P4 etching can be used to divide the entire module into several experimental sub-cells. Testing the performance of these sub-cells can determine the crystallization state corresponding to different regions and locations on the module membrane surface. P4 is a set of parallel double straight lines. The number of P4 etching groups can be determined based on the specific distribution of the membrane surface. The number of sub-cells is determined by the number of P4 line groups n, that is, 4×n.

[0070] The substrate F is continuously calcined at a constant high temperature to form a mesoporous layer. After cooling, the perovskite precursor solution is filled into the mesoporous layer, and the device is annealed to obtain a perovskite photovoltaic device.

[0071] In an optional embodiment of the present invention, step 12 may include:

[0072] Step 121: number the plurality of sub-cells in order of rows and columns, and -2 Under test conditions simulating a solar light source, a current density-voltage curve test is performed on the plurality of sub-cells to obtain a plurality of efficiency data.

[0073] In this embodiment, the sub-cells are first numbered to reflect the position of each sub-cell in the perovskite photovoltaic module device; for example, the perovskite photovoltaic module device can be divided into several rows and columns, and then each sub-cell is assigned a unique number in order from left to right and from top to bottom, such as "R1C1" represents the sub-cell in the first row and first column, and "R2C3" represents the sub-cell in the second row and third column;

[0074] The test conditions are AM 1.5G 100mW·cm -2 Simulates sunlight. AM 1.5G refers to the global average solar spectrum distribution with an air mass (AirMass) of 1.5, representing the typical distribution of sunlight on the earth's surface; and 100mW·cm -2 It refers to the light intensity, that is, the light power received per square meter is 100 milliwatts; the simulated solar light source is a light source device that can simulate the spectrum and light intensity of sunlight, and is used for testing and calibration of photovoltaic devices; by using a simulated solar light source, the consistency and repeatability of the test conditions can be ensured, thereby more accurately evaluating the performance of perovskite photovoltaic module devices.

[0075] After setting the test conditions, you can start the current density-voltage curve test for multiple sub-cells. The test process usually includes the following steps:

[0076] Connecting the test system: Connecting the perovskite photovoltaic module device to the current-voltage test system; the test system can accurately control the voltage or current and measure the corresponding current or voltage response;

[0077] Applying voltage: During the test, the test system applies a series of different voltage values ​​to each sub-cell, usually ranging from the open circuit voltage Voc to the short circuit current Jsc. At each voltage value, the test system records the corresponding current density value.

[0078] Recording data: The test system automatically records the current density value of each sub-cell at each voltage value and draws a current density-voltage (JV) curve; this curve reflects the photoelectric conversion performance of the sub-cell at different voltages;

[0079] Calculate efficiency data: From the JV curve, key performance parameters can be extracted, such as open circuit voltage Voc, short circuit current density Jsc, fill factor FF and conversion efficiency PCE; these parameters are important indicators for evaluating the performance of perovskite photovoltaic module devices.

[0080] In an optional embodiment proposed by the present invention, step 13 may include:

[0081] Step 131 , dividing the plurality of sub-cells into outer sub-cells and inner sub-cells according to positions of the plurality of sub-cells;

[0082] Step 132, calculating the average efficiency data of the outer sub-cell to obtain first average efficiency data;

[0083] Step 133, calculating the average efficiency data of the inner sub-cell to obtain second average efficiency data;

[0084] Step 134 : Compare the first average efficiency data with the second average efficiency data to obtain uniformity data of the first perovskite photovoltaic module device.

[0085] In this embodiment, a standard for distinguishing between inner and outer layers must first be defined. For example, if the perovskite photovoltaic module device is rectangular, sub-cells whose distance from the center exceeds a certain threshold (this threshold can be pre-set based on the specific size and design of the module) are classified as outer sub-cells, with the center of the module as the reference. Sub-cells within this threshold are classified as inner sub-cells.

[0086] For each outer sub-cell, its corresponding efficiency data needs to be obtained under standard lighting conditions (AM 1.5G100mW·cm -2 ), measure the output power of each outer sub-cell, and calculate the photoelectric conversion efficiency of each sub-cell based on its effective light-receiving area; summarize the efficiency data of all outer sub-cells; assuming that the number of outer sub-cells is n1, their efficiency data are e 11 、e 12 、……e 1n1 , then the calculation formula for the first average efficiency data E1 is: E1 calculated by this formula is the average efficiency data of the outer sub-cell;

[0087] Similar to the outer sub-cell, using the same test equipment and standard lighting conditions, the output power of each inner sub-cell is measured, and the photoelectric conversion efficiency is calculated based on the effective light-receiving area.

[0088] Assume that the number of inner sub-batteries is n2, and their efficiency data are e 21 、e 22 、……e 2n2 , then the calculation formula for the second average efficiency data E2 is: After this calculation step, the average efficiency data E2 of the inner sub-cell is obtained;

[0089] Compare the first average efficiency data E1 with the second average efficiency data E2. This comparison can be performed in a variety of ways, such as calculating the difference ΔE = |E1–E2| between the two. A larger difference indicates a greater difference in the average efficiency of the inner and outer sub-cells, meaning the module has poorer efficiency uniformity at different locations. Alternatively, the ratio E1 / E2 (or E2 / E1) can be calculated, and the uniformity can be measured by how close the ratio is to 1. The closer the ratio is to 1, the better the uniformity.

[0090] Uniformity Data Determination: Based on the selected comparison method, the resulting data represents the uniformity of the first perovskite photovoltaic module. This data intuitively reflects the module's efficiency consistency at different locations (inner and outer layers), providing an important basis for evaluating module performance and quality. For example, if a difference comparison method is used, an acceptable difference threshold is set. If ΔE is less than this threshold, the module is considered to have good uniformity; otherwise, optimization of the module's manufacturing process or design is necessary.

[0091] Example 1

[0092] A method for detecting uniformity of a perovskite photovoltaic module device comprises the following steps:

[0093] (S11) preparing a dense layer containing conductive glass FTO by spray pyrolysis at 450°C;

[0094] (S12) performing P1 etching on the dense layer and FTO by a femtosecond laser to separate the positive and negative electrodes of the device, wherein the P1 line width is 0.5 mm and the P1 etching groove depth is 500 nm;

[0095] (S13) uniformly printing TiO2 slurry on the dense layer, waiting for the film surface to naturally level until the surface is smooth and flat, then drying it at a low temperature, and then sintering it at a constant high temperature to obtain mesoporous TiO2; wherein the TiO2 thickness is 0.3 μm and the sintering temperature reaches 500° C.;

[0096] (S14) uniformly printing ZrO2 slurry on the mesoporous TiO2, and drying the film at a low temperature until the film surface is flat and smooth after printing to obtain the mesoporous ZrO2; wherein the ZrO2 thickness is 1 μm;

[0097] (S15) uniformly preparing a carbon electrode layer on the mesoporous ZrO2 by screen printing again, and repeatedly printing the carbon electrode slurry to form a uniform carbon electrode without voids; wherein the carbon electrode has a thickness of 10 μm;

[0098] (S16) Laser etching of P3 line. The P3 line is etched by a femtosecond laser. The P3 etching line is parallel to the P1 direction with a spacing of 1 mm. The line width is 0.1 mm and the etching depth is 10 μm.

[0099] (S17) P4 edge cleaning and etching. After P3 is completed, P4 is patterned and edge cleaned. The P4 etching lines are two parallel straight lines with a distance of 5 mm between them. Their directions are both perpendicular to P1. The line width is 0.1 mm and the etching depth is 12 μm. There are four groups of double straight lines evenly distributed on the carbon electrode film surface.

[0100] (S18) Determine the active area of ​​the sub-cell. n = 4. The entire panel is divided into 4 × 4 experimental-grade sub-cells by etching with P3 and P4. The active area of ​​each sub-cell is 1 × 5 mm. 2 .

[0101] (S19) Perovskite filling. The etched three-layer film is continuously calcined at a constant high temperature to form a three-layer mesoporous structure. After cooling, the perovskite precursor solution is filled into the mesoporous layer, and the device is annealed to obtain a perovskite photovoltaic device. The high-temperature sintering temperature reaches 400°C and is continuously maintained. The perovskite precursor solution is a mixed cationic component system of formamidinium lead iodide and methylamine lead iodide. The annealing process must be maintained at a temperature of 50°C for at least 4 hours, and an open-pored metal steel plate and silicone pad are used to create favorable conditions for the volatilization of the solvent atmosphere.

[0102] (S110) Prepare a large-area module device. The only difference between the preparation of the module device and the above steps (S11) to (S19) is the laser etching. First, perform steps (S11) to (S14), wherein P1 etching divides the TiO2 film surface into several series sub-cells; after step (S14), perform a second etching line (P2), with the P2 etching line closely adjacent to the P1 etching line and a depth of 4μm; then perform steps (S15) to (S17) in sequence, wherein the P3 line is closely adjacent to the P2 line, and the P4 line is cleared to determine the effective area. There are four types of etching lines: P1, P2, P3, and P4; finally, perform step (S19) to prepare the module device by the same perovskite filling and device annealing process.

[0103] (S111) The prepared devices are divided and numbered in order of rows and columns. -2 Under the test conditions of simulating solar light source, the JV curve test of the obtained experimental-grade sub-cell was carried out, and the device performance is shown in Table 1.

[0104] Table 1 Efficiency (%) of 16 sub-cells arranged in order and module devices with the same crystal structure

[0105]

[0106] By comparing the performance of 16 sub-cells, it can be found that the performance of the outer area relative to the membrane surface is significantly lower than that of the inner area, and the performance of the first to fourth columns increases successively, indicating that the crystallization around the device is too fast and there are obvious crystallization differences in each area. It is necessary to regulate the crystallization of the outer area that is too fast, that is, to make corresponding improvements to the cavity that suppresses solvent volatilization, and narrow the solvent volatilization window in this area to improve the unevenness.

[0107] Example 2

[0108] Compared with Example 1, the P4 pattern etching is refined to make the distribution of sub-cells on the membrane surface more uniform. The specific process steps include the following:

[0109] (S21) preparing a dense layer containing conductive glass FTO by spray pyrolysis at 450°C;

[0110] (S22) performing P1 etching on the dense layer and FTO by a femtosecond laser to separate the positive and negative electrodes of the device, wherein the P1 line width is 0.5 mm and the groove depth obtained by P1 etching is 500 nm;

[0111] (S23) uniformly printing TiO2 slurry on the dense layer, waiting for the film surface to naturally level until the surface is flat and smooth, then drying it at a low temperature, and then sintering it at a constant high temperature to obtain mesoporous TiO2; wherein the TiO2 thickness is 0.3 μm and the sintering temperature is 500° C.;

[0112] (S24) uniformly printing ZrO2 slurry on the mesoporous TiO2, and drying the film at a low temperature until the film surface is flat and smooth after printing to obtain the mesoporous ZrO2; wherein the ZrO2 thickness is 1 μm;

[0113] (S25) uniformly preparing a carbon electrode layer on the mesoporous ZrO2 by screen printing again, and repeatedly printing the carbon electrode slurry to form a uniform carbon electrode without voids; wherein the carbon electrode has a thickness of 10 μm;

[0114] (S26) Laser etching of P3 line. The P3 line is etched by a femtosecond laser. The P3 etching line is parallel to the P1 direction with a spacing of 1 mm. The line width is 0.1 mm and the etching depth is 10 μm.

[0115] (S27) P4 edge cleaning and etching. After P3 is completed, P4 is patterned and edge cleaned. The P4 etching lines are parallel to each other with a distance of 5 mm between them. Their directions are perpendicular to P1, the line width is 0.1 mm, and the etching depth is 12 μm.

[0116] (S28) Determine the active area of ​​the sub-cell. n = 5. The entire panel is divided into 4 × 5 experimental sub-cells by etching with P3 and P4. The active area of ​​each sub-cell is 1 × 5 mm. 2 .

[0117] (S29) Perovskite filling. The etched three-layer film is continuously calcined at a constant high temperature to form a three-layer mesoporous structure. After cooling, the perovskite precursor solution is filled into the mesoporous layer, and the device is annealed to obtain a perovskite photovoltaic device. The entire filling annealing process is highly consistent with the module device process. The high-temperature sintering temperature reaches 400°C and is continuously maintained. The perovskite precursor solution is a mixed cationic component system of formamidinium lead iodide and methylamine lead iodide. The annealing process must be maintained at a temperature of 50°C for at least 4 hours, and a perforated metal steel plate and silicone pad are used to create favorable conditions for the volatilization of the solvent atmosphere.

[0118] (S210) Prepare a large-area module device. The only difference between the preparation of the module device and the above steps (S21) to (S29) is the laser etching. First, perform steps (S21) to (S24), wherein P1 etching divides the TiO2 film surface into several series sub-cells; after step (S24), perform P2 etching, with the P2 etching line close to the P1 etching line and a depth of 4μm; then perform steps (S25) to (S27) in sequence, wherein the P3 line is close to the P2 line, and the P4 line is cleared to determine the effective area. There are four etching lines: P1, P2, P3, and P4. Finally, perform step (S29) to prepare the module device with the same perovskite filling and device annealing process.

[0119] (S211) The prepared devices are divided and numbered in order of rows and columns. -2 Under the test conditions of simulating solar light source, the JV curve test of the obtained experimental-grade sub-cell was carried out, and the device performance is shown in Table 2.

[0120] Table 2 Efficiency of 20 sub-cells arranged in order and module devices with the same crystal structure (%)

[0121]

[0122] Compared with Example 1, Example 2 optimizes the problem of too rapid crystallization around the membrane surface, reduces the number of openings in the metal steel plate during annealing to reduce the solvent volatilization rate, and seals the openings around the areas where crystallization is too rapid, thereby improving the volatilization process of the solvent cavity during annealing and optimizing the crystallization quality.

[0123] In addition, the pattern process of Example 2 is refined. Compared with Example 1 (n=4) which has only 16 sub-cells, Example 2 (n=5) increases to 20, making the distribution of sub-cells on the membrane surface more uniform and the regional detection results more intuitive and effective.

[0124] By comparing the performance of 20 sub-cells, it can be found that the performance of each sub-cell after optimization is relatively average, and the average value of each sub-cell row and column and the efficiency of the module device are significantly improved compared with Example 1, and no local outliers are found. This shows that the crystallization of the entire membrane surface is relatively uniform, without obvious crystallization differences. At the same time, it can be qualitatively explained that the series-connected sub-cells of the module device under this crystallization method are relatively uniform.

[0125] like Figure 3 As shown, an embodiment of the present invention provides a perovskite photovoltaic module device, which is prepared by performing uniformity detection on the perovskite photovoltaic module device detection method described in any one of the above embodiments to obtain preparation optimization parameters, and then preparing the device according to the preparation optimization parameters.

[0126] In this embodiment, the perovskite photovoltaic module device includes: a conductive substrate 1, a dense layer 2, a mesoporous electron transport layer 3, an insulating spacer layer 4, and an electrode layer 5; the perovskite photovoltaic module device is first tested for uniformity using the above-mentioned detection method to obtain preparation optimization parameters, and then prepared according to the preparation optimization parameters.

[0127] The above-mentioned embodiment of the present invention can ensure that the performance of each part of the perovskite photovoltaic module device remains consistent by performing uniformity testing, thereby improving the quality and reliability of the entire device. This detection method can detect non-uniformity problems that may exist in the preparation process, so that timely corrections can be made to avoid the production of defective products. At the same time, the optimized parameters obtained according to the test results can more accurately control various conditions in the preparation process, such as temperature, pressure, time, etc., thereby further improving the performance of the device. This parameter optimization is based on actual test data and is therefore more scientific and effective. Since the performance of the perovskite photovoltaic module device is closely related to the various parameters in its preparation process, by optimizing these parameters, the photoelectric conversion efficiency of the device can be significantly improved, the efficiency of solar power generation can be improved, and the cost can be reduced.

[0128] The above is a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A method for detecting a perovskite photovoltaic module device, characterized in that: include: Prepare a first perovskite photovoltaic module device according to preset preparation parameters, wherein the first perovskite photovoltaic module device includes a plurality of sub-cells; Performing a current density-voltage curve test on the plurality of sub-cells to obtain a plurality of efficiency data, wherein each efficiency data corresponds to one sub-cell; Based on the multiple efficiency data, the uniformity of the first perovskite photovoltaic module device is evaluated to obtain the uniformity data of the first perovskite photovoltaic module device, wherein the uniformity data includes the relationship between the efficiency data of the sub-cells in the peripheral area of ​​the membrane surface of the first perovskite photovoltaic module device and the efficiency data of the sub-cells in the internal area of ​​the membrane surface of the first perovskite photovoltaic module device.

2. The perovskite photovoltaic module device detection method according to claim 1, characterized in that: The method of preparing a first perovskite photovoltaic module device according to preset preparation parameters includes: providing a conductive substrate; forming a dense layer on the conductive substrate; forming a plurality of first etching lines on the dense layer by laser etching, wherein the plurality of first etching lines penetrate the dense layer; forming a mesoporous electron transport layer, an insulating spacer layer, and an electrode layer on the dense layer; forming a plurality of third etching lines on the electrode layer by laser etching, wherein the plurality of third etching lines penetrate the mesoporous electron transport layer, the insulating spacer layer, and the electrode layer; forming a plurality of fourth etching lines on the electrode layer by laser etching to obtain a substrate including a plurality of regions, wherein the plurality of fourth etching lines penetrate the mesoporous electron transport layer, the insulating spacer layer, the electrode layer, and the dense layer; The substrate including the multiple regions is sintered, filled with a perovskite precursor solution, and annealed to obtain a first perovskite photovoltaic module device.

3. The perovskite photovoltaic module device detection method according to claim 2, characterized in that: The first etching lines are parallel to the third etching lines, and the number of the first etching lines is equal to the number of the third etching lines.

4. The method for detecting a perovskite photovoltaic module device according to claim 2, wherein: The fourth etching lines are perpendicular to the first etching lines, and each group of fourth etching lines includes two fourth etching lines.

5. The perovskite photovoltaic module device detection method according to claim 2, characterized in that: The thickness of the dense layer is 1 to 1000 nm, and the dense layer is at least one of TiO2, SnO2, and ZnO; The thickness of the mesoporous electron transport layer is 0.1 to 10 μm, and the mesoporous electron transport layer is at least one of TiO2, SnO2, and ZnO; The thickness of the insulating spacer layer is 0.1 to 10 μm, and the insulating spacer layer is at least one of Al2O3, ZrO2, and MgO; The thickness of the electrode layer is 1 to 1000 μm, and the electrode layer is at least one of C, Au, Ag, and Al.

6. The method for detecting a perovskite photovoltaic module device according to claim 2, wherein: The first etched line has a line width of 0.1 to 1 mm and a depth of 1 to 1000 nm; The third etched line has a line width of 0.1 to 1 mm and a depth of 1 to 1000 μm; The fourth etched line has a line width of 0.1 to 1 mm and a depth of 1 to 1000 μm.

7. The perovskite photovoltaic module device detection method according to claim 1, characterized in that: Performing current density-voltage curve tests on the multiple sub-batteries to obtain multiple efficiency data, including: The sub-cells are numbered in order of rows and columns and are tested at AM 1.5G 100mW·cm -2 Under test conditions simulating a solar light source, current density-voltage curve tests are performed on the plurality of sub-cells to obtain a plurality of efficiency data.

8. The method for detecting a perovskite photovoltaic module device according to claim 1, wherein: Evaluating the uniformity of the first perovskite photovoltaic module device according to the plurality of efficiency data to obtain uniformity data of the first perovskite photovoltaic module device includes: dividing the plurality of sub-cells into outer sub-cells and inner sub-cells according to positions of the plurality of sub-cells; Calculating average efficiency data of the outer sub-battery to obtain first average efficiency data; Calculating average efficiency data of the inner sub-cell to obtain second average efficiency data; The first average efficiency data and the second average efficiency data are compared to obtain uniformity data of the first perovskite photovoltaic module device.

9. The method for detecting a perovskite photovoltaic module device according to claim 1, wherein: Also includes: Modifying the preset preparation parameters according to the uniformity data to obtain modified preparation parameters, wherein the modified preparation parameters are used to prepare a second perovskite photovoltaic module device; When the efficiency data of the sub-cells in the outer area of ​​the membrane surface of the first perovskite photovoltaic module device is lower than the efficiency data of the sub-cells in the inner area of ​​the membrane surface of the first perovskite photovoltaic module device, the preset preparation parameters are modified to obtain modified preparation parameters, wherein the preset preparation parameters include the number of the multiple sub-cells, the number of openings in the annealing equipment, and the opening sealing performance of the annealing equipment.

10. A perovskite photovoltaic module device, characterized in that: The perovskite photovoltaic module device is prepared by performing uniformity testing according to the perovskite photovoltaic module device testing method according to any one of claims 1 to 9 to obtain preparation optimization parameters.

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