Chip temperature measurement and morphology synchronous in-situ monitoring system based on femtosecond laser

Through a femtosecond laser-based temperature measurement and morphology synchronous in-situ monitoring system, using components such as femtosecond pulse lasers for time domain and space transformation, the problem of synchronous ultrafast temperature measurement and imaging of chips in existing technologies is solved, and high-precision synchronous temperature and morphology detection is achieved.

CN120628333APending Publication Date: 2025-09-12WUHAN UNIV
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Patent Information

Application Number
CN202510904634.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-07-01
Publication Date
2025-09-12

AI Technical Summary

Technical Problem

Existing technologies cannot achieve simultaneous ultrafast temperature measurement and imaging of chips, and cannot perform dynamic monitoring in situations such as chip short circuits or power failures. Existing methods may interfere with the normal operation of the chip or have limited measurement accuracy.

Method used

A femtosecond laser-based synchronous in-situ temperature and morphology monitoring system is adopted. It uses components such as femtosecond pulse laser, time dispersion unit, non-polarization beam splitter, spatial dispersion component, high-speed photodetector and high-speed digital oscilloscope, combined with Hilbert transform for time domain and space transformation, to achieve synchronous detection of transient temperature and morphology on the chip surface.

Benefits of technology

It achieves MHz-level synchronous monitoring of chip surface temperature and morphology, greatly improving the test sampling rate and enabling high-precision measurements under transient changes.

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Abstract

The invention relates to a chip temperature measurement and morphology synchronous in-situ monitoring system based on femtosecond laser, and the method comprises the steps: employing a femtosecond laser, a time dispersion unit, a non-polarization beam splitter, a space dispersion assembly, a focusing unit, and a MHz-level and above high-speed free space photoelectric detector; the femtosecond laser pulse is subjected to time domain and space transformation by components such as a MHz-level and above high-speed digital oscilloscope and a computer, and the transient temperature and morphology change of the surface of the chip can be obtained by combining data processing methods such as Hilbert transformation. Therefore, the problem that MHz-level synchronous ultrafast temperature measurement and imaging of the chip cannot be realized in the prior art is solved.
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