Light-emitting device and display device

Abstract

The invention discloses a light-emitting device and a display device, and the light-emitting device comprises a plurality of light-emitting elements which are arranged at intervals; a wiring layer formed on the plurality of light-emitting elements and electrically connected to the light-emitting elements; the insulating layer is formed on the wiring layer, and the insulating layer is provided with an opening part which exposes a part of the surface of the wiring layer; and the protection electrode is formed on the wiring layer and is electrically connected with the wiring layer, so that effective anti-oxidation protection can be carried out on the exposed surface of the wiring layer, and the protection electrode is in good contact with solder paste during subsequent welding.

Description

Light-emitting device and display device Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular to a light-emitting device and a display device. Background Art

[0002] Due to their high reliability, long lifespan, and low power consumption, LED chips are widely used in a variety of fields, including display devices, automotive lighting, and general lighting. For example, LED chips can serve as backlight sources for various display devices. Currently, the tiny chips (micro-LED chips, generally less than 100nm) are too small to be easily attached to display panels. Therefore, the three RGB chips are packaged as a single pixel, making it easier to attach the pixel to the display panel.

[0003] However, existing unit pixel packages also present some unresolved issues. For example, as unit pixels become increasingly miniaturized, securing them to the display substrate becomes increasingly difficult; improper internal structure design within the unit pixel package can lead to reduced unit pixel luminous intensity or light loss; and the narrow light emission angle of the light-emitting element within the unit pixel package can result in uneven light emission across the entire package. These issues severely impact the light extraction efficiency, reliability, and yield of the unit pixel, and represent urgent challenges for those skilled in the art. Technical Solutions

[0004] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a light-emitting device and a display device to improve the transfer yield, light-emitting effect and reliability of unit pixels.

[0005] In order to achieve the above-mentioned and other related objectives, the present invention provides a light-emitting device, comprising:

[0006] A plurality of light-emitting elements, wherein the plurality of light-emitting elements are arranged at intervals;

[0007] a wiring layer formed on the plurality of light emitting elements and electrically connected to the light emitting elements;

[0008] an insulating layer formed on the wiring layer, the insulating layer having an opening exposing a portion of a surface of the wiring layer;

[0009] The protection electrode is formed on the wiring layer and is electrically connected to the wiring layer.

[0010] The present invention also provides another light-emitting device, comprising:

[0011] A plurality of light-emitting elements, wherein the plurality of light-emitting elements are arranged at intervals;

[0012] a wiring layer formed on the plurality of light emitting elements and electrically connected to the light emitting elements;

[0013] a protective electrode formed on the wiring layer and electrically connected to the wiring layer;

[0014] an insulating layer formed on the wiring layer, the insulating layer having an opening exposing a surface of the protective electrode;

[0015] The insulating layer covers a portion of the surface of the cover wiring layer, a portion of the surface of the protection electrode, and a side wall.

[0016] According to one aspect of the present invention, the present invention further provides a display device, the light emitting device comprising:

[0017] display substrate;

[0018] At least one light emitting device is disposed on the surface of the display substrate. The light emitting device is electrically connected to the display substrate. The light emitting device is the above-mentioned light emitting device. Beneficial effects

[0019] Compared with the prior art, the light emitting device and display device of the present invention have at least the following beneficial effects:

[0020] The light-emitting device of the present invention includes a plurality of light-emitting elements, a wiring layer, and an insulating layer. The plurality of light-emitting elements are spaced apart. The wiring layer is formed on the plurality of light-emitting elements and is electrically connected to each light-emitting element. An insulating layer is formed on the wiring layer and has an opening that exposes a portion of the surface of the wiring layer. A protective electrode is formed on the wiring layer and is electrically connected to the wiring layer, effectively protecting the exposed surface of the wiring layer from oxidation, thereby ensuring good contact with the solder paste during subsequent soldering.

[0021] The display device described in the present invention includes any of the above-mentioned light-emitting devices and also has the above-mentioned technical effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] FIG1a is a schematic top view of a specific embodiment of embodiment 1 of the present invention;

[0023] FIG1b is a schematic top view of the structure of a wiring layer in a specific embodiment of Example 1 of the present invention;

[0024] FIG2a is a schematic cross-sectional view of an embodiment of Embodiment 1 of the present invention along the line AA′ of FIG1a ;

[0025] Figure 2b is an enlarged view of point A in Figure 2a;

[0026] FIG2c is a schematic cross-sectional view of another embodiment of the embodiment 1 of the present invention along the line AA' of FIG1;

[0027] FIG3 is a schematic diagram of a top view of a specific embodiment of Example 2 of the present invention;

[0028] FIG4a is a schematic cross-sectional view taken along the line BB' in FIG3;

[0029] FIG4b is a schematic diagram of a cross section taken along the line CC' in FIG3;

[0030] 5a-5c are schematic top views of various specific embodiments of Example 2 of the present invention;

[0031] 6a-6b are schematic top views of multiple specific embodiments of Example 2 of the present invention;

[0032] FIG7 is a cross-sectional view (along the line AA' in FIG1 ) of a specific embodiment of Example 2 of the present invention;

[0033] FIG8 a is a schematic cross-sectional view (along the CC' line in FIG3 ) of a specific embodiment of Example 3 of the present invention;

[0034] FIG8 b is a schematic cross-sectional view (along the BB′ direction in FIG3 ) of a specific embodiment of Example 3 of the present invention;

[0035] FIG9 is a schematic cross-sectional view (along the CC' line in FIG3 ) of another specific embodiment of Example 3 of the present invention;

[0036] FIG10 is a schematic cross-sectional view (along the CC' line in FIG3 ) of yet another specific embodiment of Example 3 of the present invention;

[0037] FIG11 is a schematic cross-sectional view (along the CC' line in FIG3 ) of another specific embodiment of Example 3 of the present invention;

[0038] FIG12 a is a schematic cross-sectional view (along the CC' line in FIG3 ) of a specific embodiment of Example 4 of the present invention;

[0039] FIG12 b is a schematic cross-sectional view (along the BB′ line in FIG3 ) of a specific embodiment of Example 4 of the present invention;

[0040] FIG13 is a schematic cross-sectional view (along the CC' line in FIG3 ) of another specific embodiment of Example 4 of the present invention;

[0041] FIG14 is a schematic cross-sectional view (along the CC' line in FIG3 ) of another specific embodiment of Example 4 of the present invention;

[0042] FIG15 is a schematic cross-sectional view (along the CC' line in FIG3 ) of another specific embodiment of Example 4 of the present invention;

[0043] FIG16 a is a schematic cross-sectional view (along the CC' line in FIG3 ) of a specific embodiment of Example 5 of the present invention;

[0044] FIG16 b is a schematic cross-sectional view (along the BB′ line in FIG3 ) of a specific embodiment of Example 5 of the present invention;

[0045] FIG17 is a schematic cross-sectional view (along the CC' line in FIG3 ) of another specific embodiment of Example 5 of the present invention;

[0046] FIG18 is a schematic cross-sectional view (along the CC' line in FIG3 ) of yet another specific embodiment of Example 5 of the present invention;

[0047] FIG19 is a schematic cross-sectional view (along the CC' line in FIG3 ) of another specific embodiment of Example 5 of the present invention;

[0048] FIG20 is a schematic diagram of light emission angles of light-emitting elements in the light-emitting device described in FIG1a and FIG2a in Example 1 of the present invention;

[0049] FIG21 is a schematic diagram of light emission angles of the light emitting elements in the light emitting device shown in FIG17 in Example 5 of the present invention;

[0050] FIG22 is a schematic structural diagram of the display device described in Example 6 of the present invention.

[0051] List of reference numerals:

[0052] 100 Transparent layer 700a First region 200 Overhead layer 700b Second region 201 First surface 700c Third region 202 Second surface 800 Insulating layer 203 Groove 800a Lower surface 300 Adhesive layer 800b Upper surface 301 Opening 800c Side surface 400 Angle adjustment layer 801 Opening 401 First angle adjustment layer 802 Notch 402 Second angle adjustment layer 900 Protective electrode 403 Third angle adjustment layer 900a First portion 501 First light-emitting element 900b Second portion 502 Second light-emitting element 910 First protective electrode 503 Third light-emitting element 920 Second protective electrode 504 First electrode 930 Third protection electrode 505 Second electrode 940 Fourth protection electrode 600 Filling layer 901 First sidewall 601 Gap 902 Second sidewall 602 Groove 903 Third sidewall 610 First filling structure 904 Fourth sidewall 620 Second filling structure 1001 First side 611 First sub-layer 1002 Second side 612 Second sub-layer X First direction 700 Wiring layer Y Second direction 701 First layer 001 First edge 702 Second layer 002 Second edge 710 First sub-wiring 003 Third edge 720 Second sub-wiring 004 Fourth edge 730 Third sub-wiring 005 Light-emitting module 740 Fourth sub-wiring 006 Display substrate Modes for Carrying Out the Invention

[0053] The following specific embodiments illustrate the embodiments of the present invention. Those skilled in the art will readily appreciate the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different perspectives and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features of the embodiments may be combined with each other unless they conflict.

[0054] It should be noted that the diagrams provided in the embodiments of the present invention are only schematic illustrations of the basic concept of the present invention. Although the diagrams only show components related to the present invention and are not drawn according to the number, shape, and size of components in actual implementation, the form, quantity, and proportion of each component in actual implementation can be changed at will, and the component layout form may also be more complex. The structures, proportions, sizes, etc. illustrated in the drawings of the specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the conditions for the implementation of this application. Therefore, they have no technical significance. Any structural modification, change in proportional relationship, or adjustment of size should still fall within the scope of the technical content disclosed in this application without affecting the efficacy and purpose of the present invention.

[0055] This embodiment is described in detail below with reference to specific embodiments. Example 1

[0056] FIG. 1 a is a schematic top view of the structure of a specific embodiment of the present invention; FIG. 2 a is a schematic cross-sectional view along line AA′ of FIG. 1 a .

[0057] This embodiment provides a light-emitting device. Referring to FIG. 1 a and FIG. 2 a , the light-emitting device includes a transparent layer 100 , a plurality of light-emitting elements, a wiring layer 700 , and an insulating layer 800 .

[0058] 1a and 2a, the transparent layer 100 may have a light transmittance of more than 60% in the visible light range. Optionally, the transparent layer 100 may be a transparent substrate, which may be a light-transmitting substrate such as PET, glass, quartz, sapphire, or transparent ceramic. The light-emitting device needs to have a certain thickness for easy use by the client, so the thickness of the transparent layer 100 is preferably greater than 10 μm, specifically preferably 30 μm to 50 μm, 50 μm to 100 μm, or 100 μm to 300 μm. A plurality of light-emitting elements are provided on the surface of the transparent layer 100. The side of the transparent layer 100 away from the light-emitting element is the light-emitting surface of the light-emitting device, that is, the light emitted by the light-emitting element is emitted outward through the transparent layer 100.

[0059] 2a, a plurality of light-emitting elements are provided on a transparent layer 100. Since different light-emitting elements generally have different thicknesses, an adhesive layer 300 is provided between the transparent layer 100 and the light-emitting element, wherein the material of the adhesive layer 300 may be an elastic material such as silicone. Thus, the light-emitting element is partially sunken into the adhesive layer 300 to keep the electrode surfaces of the light-emitting element at the same level, and the height difference of the light-emitting surfaces of each light-emitting element can be reduced, so that the light emitted from the side of the light-emitting element is absorbed as much as possible by the filling layer 600 described below, so as to improve the contrast of the light-emitting device. The thickness of the adhesive layer 300 is preferably 1 μm to 15 μm or 3 μm to 10 μm. If the thickness of the adhesive layer 300 is greater than 15 μm, the alignment accuracy of the light-emitting element may be affected.

[0060] The light-emitting element in this embodiment mainly refers to a micron-sized light-emitting diode, whose width or length ranges from 2 to 5 μm, 5 to 10 μm, 10 to 20 μm, 20 to 50 μm or 50 to 100 μm, and its thickness ranges from 2 to 15 μm, preferably 5 to 10 μm.

[0061] Specifically, each light-emitting element includes a semiconductor stack layer, which may include a first semiconductor layer, a second semiconductor layer, and an active layer disposed therebetween, arranged sequentially. The first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, and the active layer is a multi-layer quantum well layer that can provide red, green, or blue light. The N-type semiconductor layer, the multi-layer quantum well layer, and the P-type semiconductor layer are merely the basic building blocks of light-emitting element 500. On this basis, light-emitting element 500 may also include other functional structural layers that optimize the performance of light-emitting element 500.

[0062] The first light-emitting element 501, the second light-emitting element 502, and the third light-emitting element 503 each radiate light of different wavelength ranges. For example, the first light-emitting element 501 radiates blue light, the second light-emitting element 502 radiates green light, and the third light-emitting element 503 radiates red light. In one embodiment, different light-emitting elements 500 may have different semiconductor stacked layers to directly radiate light of different wavelength ranges. The specific material of the semiconductor stacked layer is selected according to the wavelength of the radiated light, including but not limited to aluminum gallium arsenide, gallium arsenide phosphide, aluminum gallium indium phosphide, gallium nitride, indium gallium nitride, zinc selenide, or gallium phosphide. In another embodiment, different light-emitting elements 500 may have the same semiconductor stacked layer. For example, the semiconductor stacked layers in the first light-emitting element 501, the second light-emitting element 502, and the third light-emitting element 503 all radiate blue light, and a wavelength conversion layer is provided on the light-emitting surface of the second light-emitting element 502 to convert the radiated blue light into green light, and a wavelength conversion layer is provided on the light-emitting surface of the third light-emitting element 503 to convert the radiated blue light into red light.

[0063] Each light emitting element 500 further includes a first electrode and a second electrode. The semiconductor stack layer has a mesa exposing the first semiconductor layer. The first electrode is formed on the mesa and electrically connected to the first semiconductor layer. The second electrode is formed on the second semiconductor layer and electrically connected to the second semiconductor layer.

[0064] Referring to Figure 2a, a filling layer 600 is provided between adjacent light-emitting elements or around the sidewalls of the light-emitting elements. The provision of the filling layer 600 can prevent color mixing or light interference between adjacent light-emitting elements, thereby improving the contrast of the light-emitting device. The filling layer 600 is provided as a black glue layer that absorbs light. Specifically, the filling layer 600 can be a component formed by dispersing a black filling component with a particle size not greater than 1 μm in a transparent or translucent material such as silica gel, epoxy resin, polyimide, low-temperature glass, polysiloxane, polysilazane, etc. The black filling component in the filling layer 600 includes but is not limited to carbon black, titanium nitride, iron oxide, ferroferric oxide, iron powder, etc. The particle size range of the black filling component is preferably 10~100nm, or 100~200nm, or 200~300nm, or 300nm~500nm. The filling layer 600 can also be made of a black dye.

[0065] Referring to Figure 2a, a wiring layer 700 is disposed above the light-emitting elements and the filling layer 600 and electrically connects to each light-emitting element via metal wiring within it. The wiring layer 700 includes a plurality of wirings, and an insulating layer surrounds the wiring layer 700 to electrically isolate adjacent wirings. The wiring layer 700 can be a single layer or multiple layers made of at least one material selected from titanium, copper, chromium, nickel, gold, platinum, aluminum, titanium nitride, tantalum nitride, or tantalum. In this embodiment, the wiring layer 700 comprises two layers: a first layer 701 and a second layer 702. The first layer 701 is in direct contact with the light-emitting elements, and the second layer 702 is formed above the first layer 701. The first layer 701 is used to adhere the second layer 702 to the light-emitting elements and the filling layer 600, while the second layer 702 primarily serves as a conductor. The materials for the first layer 701 include, but are not limited to, one or more of titanium, nickel, titanium nitride, tantalum nitride, or tantalum, while the materials for the second layer 702 include, but are not limited to, one or more of copper, aluminum, or gold. The wiring layer 700 can be prepared by sputtering, evaporation, or the like.

[0066] In one embodiment, referring to FIG1 b , the wiring layer 700 includes a first sub-wiring 710, a second sub-wiring 720, a third sub-wiring 730, and a fourth sub-wiring 740. The first sub-wiring 710 serves as a common wiring. The first electrodes of the first light-emitting element 501, the second light-emitting element 502, and the third light-emitting element 503 are commonly connected to the first sub-wiring 710. The second electrode of the first light-emitting element 501 is connected to the second sub-wiring 720. The second electrode of the second light-emitting element 502 is connected to the third sub-wiring 730. The second electrode of the third light-emitting element 503 is connected to the fourth sub-wiring 740. The wiring layer 300 may be formed together on the filling layer 210.

[0067] Alternatively, the first sub-wiring 710 serves as a common wiring, and the second electrodes of the first, second, and third light-emitting elements 501, 502, and 503 are commonly connected to the first sub-wiring 710. The first electrode of the first light-emitting element 501 is connected to the second sub-wiring 720, the first electrode of the second light-emitting element 502 is connected to the third sub-wiring 730, and the first electrode of the third light-emitting element 503 is connected to the fourth sub-wiring 740. The wiring layer 700 may be formed together on the filling layer 600. In one embodiment, referring to FIG. 1b , each sub-wiring includes a first region 700a connected to the light-emitting element, a second region 700b that will be subsequently bonded to the circuit substrate via a bonding material, and a third region 700c that connects the first and second regions 700a, 700b. The first and third regions 700a, 700b may be linear structures with a width less than or equal to 50μm, preferably 5μm to 20μm, 10μm to 30μm, or 20μm to 40μm. Due to the small size of the light-emitting device, the space for forming the wiring layer 700 on the light-emitting element is limited. If the width is greater than 50μm, electrical problems are likely to occur. If the width is less than 5μm, the structures of the first region 700a and the third region 700b are too fragile and prone to the risk of breakage. The shape of the second region 700b can be set to any shape, such as a rectangle, circle, or other polygonal shape. In this embodiment, the second region 700b is described as a rectangle or a quasi-rectangular shape. The second region 700b is the location for subsequent bonding with the circuit substrate through bonding material. If the area is too small, the combination of the light-emitting device and the substrate will be unstable, so a certain area needs to be maintained.

[0068] 1a and 2a , an insulating layer 800 is formed on a wiring layer 700 . Portions of the insulating layer 800 can be removed by exposure, development, or other methods, to form a plurality of openings 801 that expose portions of the surface of the wiring layer 700 , namely, the second region 700 b of the wiring layer 700 . In one embodiment, referring to FIG. 2a , the openings 801 in the insulating layer 800 include a lower surface 800 a in contact with the wiring layer 700 , an upper surface 800 b opposite the lower surface 800 a , and a side surface 800 c connecting the upper surface 800 b and the lower surface 800 a . The side surface 800 c forms an angle α with the lower surface 800 a , and the angle α is less than or equal to 80°, for example, less than or equal to 70°, less than or equal to 60°, or less than or equal to 50°.

[0069] In one embodiment, the insulating layer 800 may be formed of materials such as epoxy resin, polysiloxane or photoresist, which can prevent the wiring layer 700 from being oxidized and electrically isolate different wirings to prevent leakage failure of the light-emitting device.

[0070] The light-emitting device is subsequently mounted on a circuit substrate using a bonding material such as solder. Specifically, the bonding material can bond the wiring layer 700 exposed in the opening 801 of the insulating layer 800 to the electrode pad on the circuit substrate. Since the exposed surface of the wiring layer 700 is easily oxidized in the air, it may easily lead to problems such as poor electrical properties. Therefore, in one embodiment, referring to Figures 1a and 2a, a protective electrode 900 is formed on the surface of the wiring layer exposed in the opening 801 of the insulating layer 800, that is, on the second region 700b. When the material forming the wiring layer 700 is easily oxidized, for example, in one embodiment, when the surface metal of the wiring layer 700 is Cu, the formation of the protective electrode 900 can protect the exposed wiring layer 700. Among them, multiple protective electrodes 900 are formed on the second region 700b of the exposed wiring layer 700 to form an electrical connection with the wiring layer 700. The shape of the protective electrode 900 can be set to any shape, such as a rectangle, circle, or other polygonal shape. In this embodiment, the protective electrode 900 is described as rectangular or quasi-rectangular. Referring to Figure 1a, each protective electrode 900 includes four sidewalls, namely, a first sidewall 901, a second sidewall 902, a third sidewall 903, and a fourth sidewall 904. The first sidewall 901 and the second sidewall 902 of each protective electrode 900 are located away from the edge of the light-emitting device and closer to the center of the light-emitting device. In this embodiment, a total of four protective electrodes 900 are provided.

[0071] In one embodiment, referring to FIG. 1 a , a light-emitting device includes a first side 001, a second side 002, a third side 003, and a fourth side 004 connected in sequence, wherein the first side 001 and the third side 003 are substantially parallel, and the second side 002 and the fourth side 004 are substantially parallel. Alternatively, the first side 001 and the third side 003 are parallel, and the second side 002 and the third side 004 are parallel. The first side 001 is substantially parallel to the first sidewall 901, the second side 002 is substantially parallel to the second sidewall 902, the third side 003 is substantially parallel to the third sidewall 903, and the fourth side 004 is substantially parallel to the fourth sidewall 904.

[0072] In one embodiment, referring to FIG. 1 a , the length of the first side 001 is equal to the length of the second side 002 (due to measurement error, the error range can be allowed to be controlled within 10%), and the length of the first side wall 901 of the protective electrode 900 is equal to the length of the second side wall 902 (due to measurement error, the error range can be allowed to be controlled within 10%).

[0073] In another embodiment, the length of the first side 001 is less than the length of the second side 002, and the plurality of light-emitting elements are arranged along the direction of the second side 002. The ratio of the length of the first side 001 to the length of the second side 002 is greater than the ratio of the length of the first side wall 901 to the length of the second side wall 902 of the protective electrode 900. In a preferred embodiment, when the ratio of the length of the first side 001 to the length of the second side 002 is between 0.6 and 0.9, the ratio of the length of the first side wall 901 to the length of the second side wall 902 of the protective electrode 900 is between 0.4 and 0.8. This ensures that even when the size of the light-emitting device is further reduced, sufficient area is left for the protective electrode to be integrated with the display panel.

[0074] In one embodiment, referring to FIG. 2 b , the protective electrode 900 includes a first portion 900 a formed on the second region 700 b of the wiring layer 700 and a second portion 900 b formed on the side surface 800 c of the opening 801 of the insulating layer 800 . The first portion 900 a and the second portion 900 b may be in contact with each other and continuous, effectively protecting the exposed surface of the wiring layer 700 from oxidation and ensuring good contact with the solder paste during subsequent soldering. The thickness of the first portion 900 a is greater than that of the second portion 900 b , and the thickness of the second portion 900 b gradually decreases as it moves away from the first portion 900 a , ensuring good adhesion between the edge of the protective electrode 900 and the side surface 800 c of the opening 801 of the insulating layer 800 .

[0075] In one embodiment, the material of the protective electrode 900 can be one or more of nickel, gold, platinum, or chromium, tin, or palladium. The thickness of the protective electrode 900 is between 1 and 6 μm, for example, 2 μm, 3 μm, 4 μm, 5 μm, etc.

[0076] In one embodiment, the protective electrode 900 includes a first layer structure and a second layer structure. The thickness of the first layer structure is greater than the thickness of the second layer structure. In a preferred embodiment, the first layer structure may be a nickel layer and the second layer structure may be a gold layer. The thickness of the first layer structure is 2μm to 5μm, and the thickness of the second layer structure is 20 Å to 50 Å. Setting this thickness ratio can achieve good flatness. In one embodiment, the wiring layer 700 includes copper metal. For example, when the surface metal is copper, part of the copper metal contacts the insulating layer 800, and part of the copper metal is exposed by the insulating layer opening 801, thereby contacting the protective electrode 900 and being protected by the protective electrode 900 to prevent oxidation.

[0077] In one embodiment, the thickness of the protective electrode 900 is greater than the thickness of the wiring layer 700, and the thickness of the protective electrode 900 is less than the thickness of the insulating layer 800. In one embodiment, the thickness of the insulating layer 800 is between 2 and 10 μm. For example, the thickness of the insulating layer 800 can be 4 μm, 5 μm, 6 μm, 7 μm, etc. A thicker insulating layer 800 within this range is beneficial for enhancing the mechanical strength of the product. However, if the insulating layer 800 is too thick, exceeding the above range, it may cause poor electrical properties.

[0078] In one embodiment, referring to Figure 2a , the thickness of the protective electrode 900 is less than that of the insulating layer 800 . A minimum distance D1 is defined between the surface of the protective electrode 900 and the upper surface 800b of the insulating layer 800 . The thickness of the insulating layer 800 is H1 , and the height difference between D1 and H1 ranges from 0 to 10 μm. If D1 is too large, the light-emitting device may require a larger volume of solder or other bonding material for subsequent mounting on the circuit substrate. A larger D1 also increases the bonding material heating time, potentially affecting the performance of the light-emitting device.

[0079] Figure 2c is a schematic cross-sectional view of another embodiment of Example 1 of the present invention along the A-A' line of Figure 1a. In one embodiment, referring to Figures 1a and 2c, the protective electrode 900 is formed on the second region 700b of the wiring layer 700, and the insulating layer 800 covers a portion of the surface of the wiring layer 700 and the sidewalls and a portion of the surface of the protective electrode 900. Specifically, the insulating layer 800 is formed on the wiring layer 700, and an opening 801 is formed to expose the surface of the protective electrode 900, and the projection of the opening 801 has an overlapping area with the protective electrode 900. In a preferred embodiment, the projection of the opening 801 is located within the projection of the protective electrode 900. The edges and sidewalls of the protective electrode 900 are covered by the insulating layer 800, which can prevent external moisture from entering the interior of the light-emitting device, thereby improving the reliability of the light-emitting device. In addition, in this embodiment, the protective electrode 900 can first be formed on the second area 700b of the wiring layer 700 through a wet process, and then the insulating layer 800 covers the surface of the wiring layer 700 and the side walls and part of the surface of the protective electrode 900, which can prevent the side walls 800c of the opening 801 of the insulating layer 800 from forming cracks with the surface of the wiring layer 700, thereby improving the reliability of the light-emitting device.

[0080] In one embodiment, the wiring layer 700 includes copper metal. For example, when the surface metal is copper, part of the copper metal contacts the insulating layer 800. The protective electrode 900 includes gold metal. Part of the surface of the gold metal is covered by the insulating layer 800 and thus contacts the insulating layer 800. This can prevent the side wall 800c of the opening 801 of the insulating layer 800 from forming a crack with the surface of the wiring layer 700, thereby improving the reliability of the light-emitting device.

[0081] In one embodiment, a distance between the edge of the insulating layer 800 covering a portion of the surface of the protective electrode 900 and the edge of the protective electrode 900 is between 0 and 10 μm. If this distance is less than 0 μm, the insulating layer 800 may not completely cover the exposed surface of the wiring layer 700, causing oxidation. If this distance is greater than 10 μm, the contact area between the protective electrode 900 and the bonding material may be reduced, affecting its contact with the circuit substrate.

[0082] In one embodiment, the sidewall of the protection electrode 900 is an uneven structure. Example 2

[0083] This embodiment provides a light-emitting device. The similarities between this light-emitting device and the light-emitting device in Embodiment 1 are not repeated here. The difference between the light-emitting device and the light-emitting device is as follows:

[0084] FIG3 is a schematic diagram of a top view of a specific embodiment of the present invention; FIG4a is a schematic diagram of a cross-section along the line BB' of FIG3; and FIG4b is a schematic diagram of a cross-section along the line CC' of FIG3.

[0085] 3 to 4 b , in this embodiment, a plurality of notches 802 are formed at intervals along the edge of the insulating layer 800. Optionally, each notch 802 may expose the wiring layer 700 (i.e., the second region 700 b ), or may expose the protective electrode 900 formed on the second region 700 b of the wiring layer 700. Because the thickness of the protective electrode 900 is less than that of the insulating layer 800 in Embodiment 1, the opening 801 forms a depression on the surface of the insulating layer 800. Furthermore, because the size of the light-emitting element in this embodiment is relatively small, the size of the package is also relatively small, resulting in a smaller size of the protective electrode 900 exposed on the surface of the insulating layer 800. Accordingly, the size of the depression formed on the insulating layer 800 is also smaller. When using a blue film to transfer the entire light-emitting device, the blue film is attached to the side of the insulating layer 800 of the light-emitting device that has the recess. Due to the small recess on the surface of the insulating layer 800 and its small size, a large negative pressure is easily generated during the reverse molding process, resulting in an inability to efficiently reverse mold the light-emitting device, thereby affecting transfer efficiency. As a result, multiple notches 802 are formed at the edge of the insulating layer 800 of this embodiment. The notches 802 expose at least a portion of the edge of the light-emitting device. Since the protective electrode 900 is exposed within the notches 802 located at the edge of the insulating layer 800, no recess is formed on the surface of the insulating layer 800. When the entire light-emitting device is transferred, no negative pressure is generated between the light-emitting device and the blue film. As a result, the light-emitting device of this embodiment can improve transfer efficiency and device yield.

[0086] 3 , there is a minimum distance D2 between the edge of the notch 802 of the insulating layer 800 and the edge of the light-emitting device. The minimum distance D2 is less than 120 μm. Optionally, the minimum distance can be set within 20 to 80 μm so that the insulating layer can completely cover the wiring layer or circuit on the light-emitting device.

[0087] In one embodiment, referring to Figure 3, each notch portion 802 includes a first edge and a second edge, the first edge of the notch portion 802 is arranged approximately parallel to the second side 002, the second edge of the notch portion 802 is arranged approximately parallel to the first side 001, the ratio of the minimum distance D2 from the first edge to the second side 002 to the first side 001 is 0.1~0.5, and the ratio of the minimum distance D3 from the second edge to the first side 001 to the length of the second side 002 is 0.3~0.6.

[0088] In one embodiment, referring to FIG3 , the light-emitting device includes a first side 001, a second side 002, a third side 003, and a fourth side 004. The first side 001 and the third side 003 are disposed opposite each other, and the second side 002 and the fourth side 004 are disposed opposite each other. The length of the second side 002 is greater than the length of the first side 001. Along the extension direction of the second side 002, a distance D4 between two adjacent protective electrodes 900 is greater than 40 μm. Optionally, the ratio of the distance D4 between two adjacent protective electrodes 900 to the length of the second side 002 is 1:4, and the ratio of the distance D4 between adjacent protective electrodes to the length of the first side 001 is 1:2. Optionally, along the extension direction of the second side 002, the distance D4 between two adjacent protective electrodes is 40 μm to 100 μm.

[0089] In one embodiment, referring to Figures 3 to 4b, a plurality of light-emitting elements are spaced apart and arranged on a transparent layer 100, and the projected area of ​​the insulating layer 800 on the transparent layer 100 accounts for a ratio of 0.4 to 0.8 of the area of ​​the transparent layer 100. Optionally, the projected area of ​​the notches 802 of the plurality of insulating layers 800 on the transparent layer 100 accounts for a ratio of 0.2 to 0.6 of the area of ​​the transparent layer 100.

[0090] Referring to Figures 3 to 4b, in this embodiment, the size of each protective electrode 900 is smaller than the size of each notch 802. Each protective electrode 900 is exposed within each notch 802, and the edges of the protective electrodes 900 are spaced apart from the edges of the light-emitting device. This prevents the protective electrodes 900 from being formed at the edges of the wiring layer 700. In this embodiment, positioning the protective electrodes 900 near the center of the light-emitting device prevents exposure of the protective electrodes 900, preventing leakage or damage to the protective electrodes 900. Optionally, the material of the protective electrodes 900 is tin, gold, or a tin-gold alloy. The area of ​​the protective electrodes 900 exposed within the notches 802 of the insulating layer 800 is much smaller than the area of ​​the wiring layer 700. Exposing the protective electrodes 900 only within the notches 802 or openings 801, rather than directly plating tin or gold on the entire wiring layer 700, can save on tin and gold materials and reduce production costs.

[0091] In a specific embodiment of this embodiment, referring to Figures 5a~5b, the insulating layer 800 includes two notches 802 spaced apart, and two protective electrodes 900 are exposed in each notch 802, and the two protective electrodes 900 are spaced apart in the notch 802. For example, the insulating layer 800 completely covers the second side wall 902 of the protective electrode 900, so that the insulating layer 800 is in the shape of a "|", as shown in Figure 5a. The insulating layer 800 completely covers the second side wall 902, and partially covers the third side wall 903 adjacent to the second side wall 902, so that the insulating layer 800 is in the shape of an "I", as shown in Figure 5b. In addition, the insulating layer 800 can also cover not only the side walls of the protective electrode 900, but also part of the surface of the protective electrode 900, as shown in Figure 5b. In the above embodiment, the length of the first side wall 901 of the protective electrode 900 is greater than the length of the second side wall 902.

[0092] In a specific embodiment, referring to FIG. 5 c , the insulating layer 800 includes three spaced-apart notches 802 , and the insulating layer 800 completely covers the second sidewall 902 of each protection electrode 900 , and covers the first sidewalls 901 of two adjacent protection electrodes 900 opposite to each other to completely cover the bottom wiring layer.

[0093] In a specific embodiment of this embodiment, referring to Figures 3 and 6a-6b, the insulating layer 800 includes four spaced-apart notches 802, and a protective electrode 900 is exposed in each notch 802. For example, the insulating layer 800 completely covers the first side wall 901 and the second side wall 902 of each protective electrode 900, so that the insulating layer 800 is in the shape of a "cross", as shown in Figure 3. The insulating layer 800 completely covers the first side wall 901 and the second side wall 902 of each protective electrode 900, and extends from the first side wall 901 to the fourth side wall 904, and from the second side wall 902 to the third side wall 903, as shown in Figure 6a or 6b. At the same time, as shown in Figure 6b, the insulating layer 800 not only covers the side walls of the protective electrode 900, but also covers part of the surface of the protective electrode 900.

[0094] It should be noted that the insulating layer 800 in this embodiment can have any shape. As long as the surface of the insulating layer 800 does not form a depression, the problem of avoiding the generation of negative pressure between the blue film and the light-emitting device can be solved. Furthermore, the protective electrode 900 can also be configured to solve the above-mentioned problem in this embodiment. For example, as shown in Figure 7, setting the thickness of the protective electrode 900 to be greater than or equal to the thickness of the insulating layer 800 can also prevent the formation of depressions on the surface of the insulating layer 800, thereby avoiding the problem of negative pressure between the blue film and the light-emitting device. Example 3

[0095] The similarities between this embodiment and the light emitting device of FIG1a and FIG2a or FIG3 and FIG4a-4b described in Example 1 are not repeated here. The differences between this embodiment and the light emitting device of FIG1a and FIG2a or FIG3 and FIG4a-4b are as follows:

[0096] Figure 8a is a schematic cross-sectional view taken along the C-C' direction in Figure 3 in a specific embodiment of the present embodiment; Figure 8b is a schematic cross-sectional view taken along the B-B' direction in Figure 3 in a specific embodiment of the present embodiment. Referring to Figure 8a or Figure 8b, in the present embodiment, the filling layer 600 formed between adjacent light-emitting elements includes a first filling structure, the filling structure is at least provided at the side wall of each light-emitting element, and the first filling structure includes a first sublayer 611 and a second sublayer 612 formed on the first sublayer 611, and the thickness of the first sublayer 611 is less than the thickness of the second sublayer 612. Among them, the first sublayer 611 can absorb light emitted from adjacent light-emitting elements, avoid light crosstalk between adjacent light-emitting elements, and form a good contrast with the second sublayer 612. The second sublayer 612 can reflect light at the side wall of the light-emitting element to the light-emitting direction, and can also avoid light crosstalk between adjacent light-emitting elements. At the same time, due to the presence of the second sublayer 612, the contrast of the light-emitting device can also be improved, which is conducive to improving the display effect. In Example 1, the filling layer 600 is formed as a whole black light-absorbing layer. Using only the black light-absorbing layer to absorb light emitted from the side of the chip will increase light loss in the chip itself. Therefore, compared with the filling layer 600 in Example 1, the light output of this embodiment is increased, and the display effect is better.

[0097] Optionally, the first sublayer 611 in this embodiment is a black material layer containing a black filler component, which includes at least one of carbon black, titanium nitride, iron oxide, ferrosoferric oxide, or iron powder. The second sublayer 612 is a white reflective material layer or a DBR reflective layer, specifically a white reflective material layer. This white reflective material layer can provide a strong contrast with the black material layer of the first sublayer 611. Optionally, the white reflective material layer can be a polyethylene terephthalate foam material, highly reflective white polypropylene, white polycarbonate (PC) resin, or the like.

[0098] Specifically, referring to FIG. 8 a , FIG. 8 b or FIG. 9 , the filling layer 600 may be formed as a first filling structure 610 as a whole. The first filling structure 610 includes a first sub-layer 611 and a second sub-layer 612 .

[0099] In a specific embodiment of this embodiment, as shown in Figures 8a and 8b, the filling layer 600 is formed as a first filling structure 610 as a whole, and along the direction from the light-emitting element to the wiring layer 700, the first filling structure 610 includes a first sublayer 611 and a second sublayer 612 in sequence along the sidewall of the light-emitting element, and the ratio of the thickness of the first sublayer 611 to the second sublayer 612 is 0.2~1. Optionally, the ratio of the thickness of the first sublayer 611 to the second sublayer 612 is 0.4~0.8. For example, the ratio of the thickness of the first sublayer 611 to the second sublayer 612 is 5:8. This ratio of the first sublayer 611 to the second sublayer 612 can effectively improve the brightness of the light-emitting element. The brightness of the light-emitting device obtained by Figures 1 and 2 in Example 1 and the light-emitting device obtained in this embodiment was tested. It can be seen that the brightness of the red light-emitting element, the green light-emitting element and the blue light-emitting element in the light-emitting device obtained by Figures 1 and 2 in Example 1 can all reach 100%. In the light-emitting device obtained in this embodiment, the brightness of the red light-emitting element can be increased to 101%, the green light-emitting element can be increased to 102.5%, and the blue light-emitting element can be increased to 103%. In another specific embodiment of this embodiment, as shown in Figure 9, the filling layer 600 is formed as a first filling structure 610 as a whole, and along the direction from the light-emitting element to the wiring layer 700, the filling structure includes a first sublayer 611 and a second sublayer 612 along the side wall of the light-emitting element in sequence, and the thickness ratio of the first sublayer 611 to the second sublayer 612 is 0.2~1. At the same time, in order to avoid the lateral emission of the backlight of the light-emitting device causing crosstalk. The insulating layer 800 in this embodiment is also set as a black material layer, and the black material layer contains a black filling component, and the black filling component includes at least one of carbon black, titanium nitride, iron oxide, ferrosoferric oxide or iron powder. Furthermore, the insulating layer 800 can avoid the lateral emission of the backlight causing crosstalk. Optionally, a material layer is also formed between the two electrodes of each light-emitting element. The material layer and the insulating layer 800 are not implemented based on the same process. The material layer can be a black material layer or a white reflective material layer. For example, when the material layer is a white material layer, it can reflect the light incident from the back, thereby increasing the brightness of the light-emitting device.

[0100] Referring to FIG. 10 or FIG. 11 , the filling layer 600 may also include a first filling structure 610 and a second filling structure 620. In a specific embodiment of this embodiment, as shown in FIG. 10 , the filling layer 600 includes the first filling structure 610 and the second filling structure 620. A gap 601 is defined between the second filling structure 620 and the sidewall of the light-emitting element, and the first filling structure 610 fills the gap 601. Along the direction from the light-emitting element to the wiring layer 700, the filling structure includes, in sequence, a first sublayer 611 and a second sublayer 612 along the sidewall of the light-emitting element. The ratio of the thickness of the first sublayer 611 to the second sublayer 612 is 0.2 to 1. In a specific embodiment of this embodiment, as shown in FIG. 11 , the filling layer 600 includes the first filling structure 610 and the second filling structure 620. A groove 203 is formed on the surface of the second filling structure 620 near the wiring layer 700. The bottom wall of the groove 203 is formed as the first sublayer 611, and the second sublayer 612 is formed within the groove 203. The second sublayer 612 is formed as a DBR reflective layer. Along the direction from the light-emitting element to the wiring layer 700, the filling structure includes a first sublayer 611 and a second sublayer 612 in sequence along the sidewalls of the light-emitting element. The ratio of the thickness of the first sublayer 611 to the second sublayer 612 is 0.2-1.

[0101] Alternatively, the adhesive layer 300 used to bond the transparent layer 100 to the plurality of light-emitting elements can be replaced with a high-refractive-index material to prevent light from being reduced at the interface between the light-emitting element and the adhesive layer 300, thereby further increasing the brightness of the light-emitting device. For example, the adhesive layer 300 can be made of epoxy resin. Example 4

[0102] The similarities between this embodiment and the light emitting device of FIG1a and FIG2a or FIG3 and FIG4a-4b described in Example 1 are not repeated here. The differences between this embodiment and the light emitting device of FIG1a and FIG2a or FIG3 and FIG4a-4b are as follows:

[0103] FIG12a is a schematic cross-sectional view along the CC' line in FIG3 of a specific embodiment of the present invention, and FIG12b is a schematic cross-sectional view along the BB' line in FIG3 of a specific embodiment of the present invention.

[0104] Referring to Figures 12a or 12b, in this embodiment, an overhead layer 200 is provided between the transparent layer 100 and the adhesive layer 300. The overhead layer 200 is formed on the surface of the transparent layer 100. The overhead layer 200 includes a first surface 201 and a second surface 202 disposed opposite each other. The first surface 201 is in contact with the transparent layer 100, and at least one groove 602 is formed on the second surface 202. The groove 602 is recessed from the second surface 202 to the first surface 201. The adhesive layer 300 is formed at least on the second surface 202 of the overhead layer 200. A plurality of light-emitting elements are disposed at intervals on the adhesive layer 300, with at least one light-emitting element corresponding to each groove 602, and a portion of the surface of the light-emitting element is in contact with the adhesive layer 300. When the luminous intensity of the light-emitting element is high or changes suddenly, the adhesive layer 300 located on the light-emitting side of the light-emitting element may also age in a high temperature or high humidity environment, causing the adhesive layer 300 to become thinner or bubbles to form within the layer. Changes in the structure of the adhesive layer 300 may also affect the light emitted from the light-emitting element to the transparent layer 100, and may even change the luminous intensity of the light-emitting element, resulting in unstable product reliability. This phenomenon is particularly significant for blue light-emitting elements. In this embodiment, an overhead layer 200 is provided between the transparent layer 100 and the adhesive layer 300. The groove 602 provided on the overhead layer 200 separates the adhesive layer 300 from the light-emitting area of ​​the light-emitting element, thereby preventing the light emitted by the light-emitting element from affecting the properties of the adhesive layer 300, thereby ultimately affecting the light output intensity of the entire device and improving the reliability of the device.

[0105] Specifically, referring to Figures 12a, 12b or 13, the groove 602 formed on the overhead layer 200 can also completely penetrate the overhead layer 200 to expose the surface of the transparent layer 100. At this time, the overhead layer 200 can be a light-transmitting layer or a photoresist layer. Optionally, the photoresist layer contains a black filling component, and the black filling component includes at least one of carbon black, titanium nitride, iron oxide, ferrosoferric oxide or iron powder. Optionally, the light-transmitting layer can be transparent silicon dioxide, transparent polyimide, etc. Referring to Figure 14, the groove 602 formed on the overhead layer 200 can partially penetrate the overhead layer 200 so that the depth of the groove 602 is less than the thickness of the overhead layer 200. At this time, the overhead layer 200 is formed as a light-transmitting layer as a whole to avoid blocking the light output of the light-emitting element.

[0106] 12a, 12b, or 13, the adhesive layer 300 is formed at least on the second surface 202. Alternatively, referring to FIG13, the adhesive layer 300 may be formed only on the second surface 202; or, referring to FIG12a, 12b, 14, or 15, may be formed simultaneously on the second surface 202 and the inner wall of the groove 602. When the adhesive layer 300 is formed on the inner wall of the groove 602, it is necessary to control the distance between the adhesive layer 300 located on the bottom wall of the groove 602 and the light-emitting element suspended above the groove 602 to ensure that, when the light-emitting intensity of the light-emitting element suddenly changes, the light-emitting intensity does not affect the structure of the adhesive layer 300. In this embodiment, Figure 12a, 12b, 14 or 15, the vertical distance between the adhesive layer 300 located on the bottom wall of the groove 602 and the light-emitting area of ​​the corresponding light-emitting element is between 5μm and 17μm, and the thickness of the overhead layer 200 and the depth of the groove 602 can be adjusted according to the vertical distance between the adhesive layer 300 and the light-emitting area of ​​the corresponding light-emitting element, which will not be described in detail here.

[0107] 12a to 15, a plurality of light-emitting elements are arranged at intervals on the adhesive layer 300, and the light-emitting area of ​​at least one light-emitting element corresponds to a groove 602. The edge of the light-emitting element is in contact with the adhesive layer 300 formed on the second surface 202 of the overhead layer 200, so that the light-emitting area of ​​the light-emitting element is suspended above the groove 602. Optionally, the plurality of light-emitting elements may include at least three light-emitting elements that emit light of different colors from each other, one of which is a light-emitting element that radiates blue light. In this case, only one groove 602 may be formed on the overhead layer 200, and the light-emitting area of ​​the light-emitting element that radiates blue light corresponds to the groove 602. Optionally, the plurality of light-emitting elements include three light-emitting elements, each of which is a light-emitting element that radiates blue light. In this case, three grooves 602 are provided on the overhead layer 200, and each groove 602 corresponds to one light-emitting element. Optionally, when the multiple light-emitting elements are respectively a light-emitting element radiating red light, a light-emitting element radiating blue light, and a light-emitting element radiating blue light, three grooves 602 can also be set on the overhead layer 200, and each groove 602 corresponds to a light-emitting element.

[0108] In a specific embodiment of this embodiment, as shown in FIG12a , three grooves 602 are provided on the second surface 202 of the overhead layer 200 , and the grooves 602 completely penetrate the overhead layer 200 , such that the bottom of the grooves 602 exposes the transparent layer 100 . An adhesive layer 300 is formed on the second surface 202 of the overhead layer 200 and on the inner wall of the grooves 602 . In addition, the light-emitting device in this embodiment includes three light-emitting elements, namely a first light-emitting element 501 , a second light-emitting element 502 , and a third light-emitting element 503 . The first light-emitting element 501 is a red light-emitting element, the second light-emitting element 502 is a green light-emitting element, and the third light-emitting element 503 is a blue light-emitting element. The light-emitting area of ​​each light-emitting element corresponds to one groove 602 and is overhead. The overhead layer 200 is formed as a light-blocking layer to prevent light crosstalk between adjacent light-emitting elements.

[0109] 13 , the adhesive layer 300 is formed only on the second surface 202 of the overhead layer 200 . Furthermore, the groove 602 completely penetrates the overhead layer 200 , such that the bottom of the groove 602 exposes the transparent layer 100 .

[0110] In a specific embodiment of this embodiment, as shown in Figure 14, the groove 602 penetrates part of the overhead layer 200, and the depth of the groove 602 is less than the thickness of the overhead layer 200. At this time, the overhead layer 200 is a light-transmitting layer, so that light can pass through the bottom wall of the groove 602 through the overhead layer 200. The material of the light-transmitting layer is transparent polyimide.

[0111] In a specific embodiment of this embodiment, as shown in FIG15 , a groove 602 is provided on the second surface 202 of the overhead layer 200. The groove 602 penetrates the overhead layer 200 so that the bottom of the groove 602 exposes the surface of the transparent layer 100. In this case, the overhead layer 200 is formed as a light-blocking layer to prevent light crosstalk between adjacent light-emitting elements. An adhesive layer 300 is formed on the second surface 202 and the inner wall of the groove 602. The light-emitting device in this embodiment includes three light-emitting elements, namely a first light-emitting element 501, a second light-emitting element 502, and a third light-emitting element 503. The first light-emitting element 501 is a red light-emitting element, the second light-emitting element 502 is a green light-emitting element, and the third light-emitting element 503 is a blue light-emitting element. The light-emitting area of ​​the blue light-emitting element corresponds to the groove 602 on the overhead layer 200. Example 5

[0112] The similarities between this embodiment and the light emitting device of FIG1 and FIG2a or FIG3 and FIG4 described in Example 1 are not repeated here. The differences are as follows:

[0113] 16a-19, the light-emitting device in this embodiment is further provided with a plurality of angle adjustment layers 400 between the transparent layer 100 and the plurality of light-emitting elements, and the angle adjustment layers 400 correspond to the light-emitting elements one by one. The angle adjustment layer 400 can adjust the light-emitting angle of each light-emitting element and expand the light-emitting angle of each light-emitting element to avoid the occurrence of light-emitting blind spots between adjacent light-emitting elements, thereby affecting the display effect. Optionally, the angle adjustment layer 400 can be a DBR reflective layer, which can have a reflectivity of more than 80% for light with an incident angle of 0 to 20 degrees, a reflectivity of 45% to 60% for light with an incident angle of 20 to 35 degrees, and a reflectivity of less than 40% for light with an incident angle of 35 to 90 degrees.

[0114] Specifically, referring to FIG16a or FIG17, the number of light-emitting elements is three. When the three light-emitting elements are red, green, and blue, the angle adjustment layer 400 corresponding to each light-emitting element is different. In this case, the angle adjustment layer 400 includes a first angle adjustment layer 401, a second angle adjustment layer 402, and a third angle adjustment layer 403. The first angle adjustment layer 401 corresponds to the red light-emitting element; the second angle adjustment layer 402 corresponds to the green light-emitting element; and the third angle adjustment layer 403 corresponds to the blue light-emitting element. Furthermore, the first angle adjustment layer 401 can have a reflectivity of 80% or more for light with a wavelength range of 620nm-760nm and an incident angle of 0-20 degrees, a reflectivity of 45%-60% for light with a wavelength range of 620nm-760nm and an incident angle of 20-35 degrees, and a reflectivity of 40% or less for light with a wavelength range of 620nm-760nm and an incident angle of 35-90 degrees. The second angle adjustment layer 402 can have a reflectivity of 80% or more for light with a wavelength range of 490nm-577nm and an incident angle of 0-20 degrees, a reflectivity of 45%-60% for light with a wavelength range of 490nm-577nm and an incident angle of 20-35 degrees, and a reflectivity of 40% or less for light with a wavelength range of 490nm-577nm and an incident angle of 35-90 degrees. The third angle adjustment layer 403 can have a reflectivity of more than 80% for light with a wavelength range of 420nm-480nm and an incident angle of 0-20 degrees, a reflectivity of 45%-60% for light with a wavelength range of 420nm-480nm and an incident angle of 20-35 degrees, and a reflectivity of less than 40% for light with a wavelength range of 420nm-480nm and an incident angle of 35-90 degrees. Referring to Figure 18, when all three light-emitting elements are blue light-emitting elements, the structure and reflectivity of the angle adjustment layer 400 provided on each light-emitting element are the same, that is, the angle adjustment layer 400 corresponding to each light-emitting element is the same angle adjustment layer 400. The angle adjustment layer 400 can have a reflectivity of more than 80% for light with a wavelength range of 420nm~480nm and an incident angle of 0~20 degrees, a reflectivity of 45%~60% for light with a wavelength range of 420nm~480nm and an incident angle of 20~35 degrees, and a reflectivity of less than 40% for light with a wavelength range of 420nm~480nm and an incident angle of 35~90 degrees.

[0115] 20 , the light output angle in Example 1 is only between -65° and +60°, while in this embodiment, the light output angle range of each light emitting element can be achieved between -80° and +80° by setting the above-mentioned angle adjustment layer 400, as shown in FIG. 21 .

[0116] Optionally, each angle adjustment layer 400 is a DBR reflective layer, which is formed by alternating layers of materials with different refractive indices. The material of the DBR reflective layer is at least two of the different materials selected from SiO2, TiO2, ZnO2, ZrO2, and Cu2O3. In this embodiment, the DBR reflective layer can be an alternating stack of TiO2 layers / SiO2 layers. Each layer can have an optical thickness of 1 / 4 of a specific wavelength and can be formed into 4 to 20 pairs. The specific DBR reflective layer structure can be designed to have a reflectivity within a desired angle range or wavelength range, which will not be described in detail here.

[0117] In a specific embodiment of this embodiment, referring to FIG16a , the three light-emitting elements of the light-emitting device are respectively a red light-emitting element, a green light-emitting element, and a blue light-emitting element, and the angle adjustment layer 400 includes a first angle adjustment layer 401, a second angle adjustment layer 402, and a third angle adjustment layer 403. The adhesive layer 300 is provided with a plurality of openings 301, each of which is embedded with an angle adjustment layer 400.

[0118] In a specific embodiment of this embodiment, referring to Figure 17, the three light-emitting elements of the light-emitting device are respectively a red light-emitting element, a green light-emitting element and a blue light-emitting element, and the angle adjustment layer 400 includes a first angle adjustment layer 401, a second angle adjustment layer 402 and a third angle adjustment layer 403. Each angle adjustment layer 400 is arranged on the surface of the adhesive layer 300 close to the multiple light-emitting elements.

[0119] In a specific embodiment of this embodiment, referring to FIG18 , the three light-emitting elements of the light-emitting device are all blue light-emitting elements, and the angle adjustment layer 400 corresponding to each light-emitting element is the same, and each angle adjustment layer 400 is arranged on the surface of the adhesive layer 300 close to the multiple light-emitting elements.

[0120] In a specific embodiment of this embodiment, referring to FIG19 , the three light-emitting elements in the light-emitting device are respectively a red light-emitting element, a green light-emitting element, and a blue light-emitting element. The angle adjustment layer 400 includes a first angle adjustment layer 401, a second angle adjustment layer 402, and a third angle adjustment layer 403. Each angle adjustment layer 400 is provided on the transparent layer 100, and the adhesive layer 300 covers the angle adjustment layer 400 and the transparent layer 100 between adjacent angle adjustment layers 400. The three light-emitting elements are formed on the adhesive layer 300 and correspond one-to-one to the first angle adjustment layer 401, the second angle adjustment layer 402, and the third angle adjustment layer 403. Optionally, the area of ​​each angle adjustment layer is larger than the area of ​​each light-emitting element to facilitate angle adjustment of the lateral light output of the light-emitting element.

[0121] It should be noted that any two or more of the above-mentioned embodiments 1 to 5 can be combined. For example, any insulating layer structure described in embodiment 1 can be applied to embodiment 2, or the filling structure in embodiment 2 can be applied to embodiment 3, 4 or 5, or embodiments 2 to 5 can be applied to embodiment 1 at the same time, etc. Other combinations will not be listed one by one here. Example 6

[0122] This embodiment provides a display device, as shown in FIG22 . The display device includes a display substrate 005 and at least one light-emitting device 006 formed on the display substrate 005. The light-emitting device can be electrically connected to the display substrate 005 by fixing a wiring layer thereto using solder paste or other methods. Alternatively, a protective electrode can be formed on the wiring layer and then fixed thereto using solder paste or other methods to electrically connect the protective electrode thereto. The light-emitting device is any one of the light-emitting devices described in any one of Embodiments 1 to 5 above, or any combination thereof. Similarly, the light-emitting device has the same technical effects as the above-described light-emitting devices.

[0123] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A light emitting device, comprising: A plurality of light emitting elements, wherein the plurality of light emitting elements are arranged at intervals; a wiring layer formed on the plurality of light emitting elements and electrically connected to the light emitting elements; An insulating layer formed on the wiring layer, the insulating layer having an opening exposing a portion of the surface of the wiring layer; The protection electrode is formed on the wiring layer and is electrically connected to the wiring layer.

2. The light emitting device according to claim 1, characterized in that: The insulating layer opening includes a lower surface in contact with the wiring layer, an upper surface opposite to the lower surface, and a side surface connecting the upper surface and the lower surface, wherein an angle is less than or equal to 80° between the side surface and the lower surface.

3. The light emitting device according to claim 2, characterized in that: The protective electrode includes a first portion formed on the wiring layer and a second portion formed on a side surface of the insulating layer opening.

4. The light emitting device according to claim 3, characterized in that: The thickness of the first portion is greater than the thickness of the second portion.

5. The light emitting device according to claim 1, characterized in that: The protection electrode includes a first layer structure and a second layer structure formed on the first layer structure, and the thickness of the first layer structure is greater than the thickness of the second layer structure.

6. The light emitting device according to claim 1, characterized in that: The thickness of the protection electrode is smaller than the thickness of the insulating layer.

7. The light emitting device according to claim 6, characterized in that: There is a minimum distance D1 between the surface of the protection electrode and the upper surface of the insulating layer. The thickness of the insulating layer is H1. The height difference between D1 and H1 is between 0 and 10 μm.

8. The light emitting device according to claim 1, characterized in that: The thickness of the protection electrode is between 1 and 6 μm, and the thickness of the insulating layer is between 2 and 10 μm.

9. The light emitting device according to claim 1, characterized in that: The wiring layer includes copper metal, a portion of the copper metal is in contact with the insulating layer, and a portion of the copper metal is in contact with the protection electrode.

10. A light emitting device, comprising: A plurality of light emitting elements, wherein the plurality of light emitting elements are arranged at intervals; a wiring layer formed on the plurality of light emitting elements and electrically connected to the light emitting elements; A protection electrode is formed on the wiring layer and is electrically connected to the wiring layer; an insulating layer formed on the wiring layer, the insulating layer having an opening portion exposing a surface of the protective electrode; The insulating layer covers a portion of the surface of the cover wiring layer, a portion of the surface of the protection electrode and the side wall.

11. The light emitting device according to claim 10, characterized in that: There is a distance between the edge of the insulating layer covering a portion of the surface of the protection electrode and the edge of the protection electrode, and the distance is between 0 and 10 micrometers.

12. The light emitting device according to claim 10, characterized in that: The side wall of the protection electrode is an uneven structure.

13. The light emitting device according to claim 10, characterized in that: The wiring layer includes a first region connected to the light emitting element, a second region forming the protective electrode, and a third region connecting the first region and the second region.

14. The light emitting device according to claim 10, characterized in that: The wiring layer includes copper metal, the protection electrode includes gold metal, the copper metal is in contact with the insulating layer, and a portion of the surface of the gold metal is in contact with the insulating layer.

15. The light emitting device according to any one of claims 1 or 10, characterized in that: Transparent layer; An adhesive layer is disposed above the transparent layer, and the plurality of light emitting elements are disposed on the adhesive layer at intervals; The filling layer is filled between adjacent light-emitting elements.

16. A display device, characterized in that: include: Display substrate; At least one light-emitting device is disposed on the surface of the display substrate, the light-emitting device is electrically connected to the display substrate, and the light-emitting device is the light-emitting device according to any one of claims 1 or 10.

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