Light-emitting device, light-emitting substrate and display device

Abstract

A light emitting device includes a first electrode, a light emitting stack layer, and at least one lens structure. The first electrode is configured to connect a pad of a driving backplane. The light-emitting stacking layer is arranged on one side of the first electrode and connected with the first electrode. The at least one lens structure is arranged opposite to the light-emitting stacking layer and located on the side, away from the first electrode, of the light-emitting stacking layer. The lens structure is configured to converge light rays emitted to the lens structure by the light-emitting stacking layer to the middle area of the lens structure.

Description

Light-emitting device, light-emitting substrate and display device Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a light-emitting device, a light-emitting substrate, and a display apparatus. Background Art

[0002] With the development of light-emitting diode (LED) technology, display devices using submillimeter (Micro) or even micron-scale light-emitting diodes (LEDs) have gained widespread application. This not only allows displays using Micro or Mini LEDs to achieve the same contrast as organic light-emitting diode (OLED) displays, but also allows them to retain the technical advantages of LCDs, such as low cost, high brightness, and high reliability. This improves the display quality and provides users with a better visual experience.

[0003] Summary of the Invention

[0004] In one aspect, a light-emitting device is provided. The light-emitting device includes a first electrode, a light-emitting stacked layer, and at least one lens structure. The first electrode is configured as a pad connected to a driving backplane. The light-emitting stacked layer is disposed on one side of the first electrode and is connected to the first electrode. The lens structure is disposed opposite the light-emitting stacked layer and is located on a side of the light-emitting stacked layer away from the first electrode. The lens structure is configured to converge light emitted from the light-emitting stacked layer toward the lens structure toward a central region of the lens structure.

[0005] In some embodiments, the lens structure includes a first surface and a second surface arranged opposite to the light-emitting stack layer, the first surface is a plane, the second surface is a curved surface, and the second surface is located on the side of the first surface away from the light-emitting stack layer.

[0006] In some embodiments, along the main axis of the lens structure, a ratio of the thickness of the lens structure to the radius of the first surface of the lens structure is 0.3-1.

[0007] In some embodiments, the light-emitting device further includes a second electrode, the second electrode is disposed on a side of the light-emitting stack layer away from the first electrode, and the lens structure is located between the second electrode and the light-emitting stack layer.

[0008] In some embodiments, the material of the lens structure includes gallium nitride.

[0009] In some embodiments, the light-emitting device includes a lens structure, wherein the orthographic projection of the lens structure on a reference plane is within the range of the orthographic projection of the light-emitting stacked layer on the reference plane. Furthermore, the distance between the boundary of the orthographic projection of the lens structure on the reference plane and the boundary of the orthographic projection of the light-emitting stacked layer on the reference plane is greater than or equal to 0.5 μm. The reference plane is the plane where the surface of the first electrode close to the light-emitting stacked layer is located.

[0010] In some embodiments, the light-emitting device includes a plurality of lens structures spaced apart from each other, and orthographic projections of the plurality of lens structures on a reference plane are symmetrical about the geometric center of the orthographic projection of the light-emitting stack on the reference plane. The reference plane is a plane where a surface of the first electrode close to the light-emitting stack is located.

[0011] In some embodiments, a minimum distance between boundaries of the plurality of lens structures is 0 μm to 0.5 μm.

[0012] In some embodiments, a minimum distance between an orthographic projection of boundaries of the plurality of lens structures on the reference plane and an orthographic projection of boundaries of the light-emitting stacked layer on the reference plane is 0 μm to 0.5 μm.

[0013] In some embodiments, the light-emitting device further includes a second electrode, which is disposed on a side of the light-emitting stack layer away from the first electrode, and the lens structure is located on a side of the second electrode away from the light-emitting stack layer.

[0014] In some embodiments, the material of the lens structure includes transparent silicone and / or transparent resin.

[0015] In some embodiments, the light emitting device further includes a spacer portion disposed between the lens structure and the second electrode.

[0016] In some embodiments, the refractive index of the material of the lens structure is greater than the refractive index of the material of the spacer portion.

[0017] In some embodiments, the radial length of the orthographic projection of the light-emitting device on the reference plane is 5 μm to 50 μm; the reference plane is the plane where the surface of the first electrode close to the light-emitting stacked layer is located.

[0018] In some embodiments, the radial length of the orthographic projection of the light-emitting device on the reference plane is 4 μm to 10 μm; the reference plane is the plane where the surface of the first electrode close to the light-emitting stacked layer is located.

[0019] In some embodiments, boundaries of two surfaces of the light-emitting stacked layer and the first electrode facing away from each other are connected to form a slope, and an angle between the slope and a surface of the light-emitting stacked layer away from the first electrode is 50° to 60°.

[0020] In some embodiments, the refractive index of the material of the lens structure is 1.5-2.5.

[0021] In another aspect, a light-emitting substrate is provided, comprising a light-emitting device according to any one of the above embodiments and a driving backplane, wherein the driving backplane is connected to the first electrode of the light-emitting device.

[0022] In some embodiments, the light emitting substrate further comprises an isolation structure, the isolation structure being disposed on a side of the light emitting device away from the driving backplane, wherein the isolation structure is provided with a plurality of first via holes, and one of the light emitting devices is exposed by one of the first via holes.

[0023] In some embodiments, the light-emitting device includes a second electrode, the second electrode is disposed on a side of the light-emitting stack layer of the light-emitting device away from the first electrode, and the isolation structure is electrically connected to the second electrode.

[0024] In some embodiments, the light-emitting substrate further includes a color conversion layer, the color conversion layer including a plurality of quantum dot films, one of the quantum dot films being disposed in one of the first via holes, the plurality of quantum dot films including a first quantum dot film, a second quantum dot film, and a third quantum dot film.

[0025] The first quantum dot film is configured to emit light of a first color when illuminated by the light emitted by the light-emitting device. The second quantum dot film is configured to emit light of a second color when illuminated by the light emitted by the light-emitting device. The third quantum dot film is configured to transmit light emitted by the light-emitting device, and the color of the light emitted by the light-emitting device is a third color. The first color, the second color, and the third color are three primary colors.

[0026] In some embodiments, the light-emitting substrate further includes a transflective module, the transflective module covering the first quantum dot film and the second quantum dot film, and configured to reflect the light of the third color and transmit the light of the first color and the second color.

[0027] In some embodiments, the light-emitting substrate further includes an encapsulation layer, which is disposed on a side of the light-emitting device away from the driving backplane; and the encapsulation layer covers the light-emitting device and the isolation structure.

[0028] In some embodiments, the refractive index of the material of the lens structure of the light-emitting device is greater than the refractive index of the material of the encapsulation layer.

[0029] In some embodiments, along a direction perpendicular to the driving backplane and pointing from the driving backplane to the light-emitting device, the first via hole increases in size sequentially in multiple cross sections parallel to the plane where the driving backplane is located.

[0030] In some embodiments, the cross-section of the first via hole perpendicular to the plane of the driver backplane is trapezoidal. Furthermore, the angle between the side surface of the isolation structure exposed at the first via hole and the surface of the isolation structure close to the light-emitting surface of the light-emitting device is 45° to 65°.

[0031] In some embodiments, the isolation structure includes a support pad and a first reflective layer, wherein the support pad is disposed on a side of the light emitting device away from the driving backplane, and the first reflective layer covers a surface of the support pad.

[0032] In some embodiments, the support pad is made of the same material as the lens structure of the light-emitting device and is provided in the same layer.

[0033] In some embodiments, the light reflected from an end of the side of the isolation structure exposed by the first via hole, away from the light-emitting surface of the light-emitting device, and emitted along a normal viewing angle direction is a first light ray. The light reflected from an end of the side of the isolation structure exposed by the first via hole, closer to the light-emitting surface of the light-emitting device, and emitted along a normal viewing angle direction is a second light ray. The normal viewing angle direction is perpendicular to the surface of the light-emitting side of the light-emitting substrate.

[0034] The end of the light-emitting surface between the first light and the second light close to the first light is the first end, and the end of the light-emitting surface between the first light and the second light close to the second light is the second end.

[0035] The area of ​​the light-emitting surface is M1. The portion between the projection of the first end along the first light ray onto the plane where the surface of the isolation structure near the light-emitting surface lies and the projection of the second end along the second light ray onto the plane where the surface of the isolation structure near the light-emitting surface lies is a brightness gain region, and the area of ​​the brightness gain region is M2. The brightness gain multiplier is η. Furthermore, M1, M2, and η satisfy the following formula: η = M1 / M2.

[0036] In some embodiments, the lens structure of the light emitting device includes a first lens portion and a second lens portion, wherein the second lens portion is disposed on a side of the first lens portion away from the driving backplane, and the first lens portion is cylindrical and the second lens portion is a spherical segment.

[0037] In some embodiments, the light-emitting substrate includes a plurality of light-emitting devices, each of the light-emitting devices includes a spacer portion, and the spacer portions of the plurality of light-emitting devices are connected to form a continuous whole-layer structure.

[0038] In some embodiments, the light-emitting substrate includes a plurality of light-emitting devices, each of the light-emitting devices includes a second electrode, and the second electrodes of the plurality of light-emitting devices are connected to form a continuous whole-layer structure.

[0039] In another aspect, a display device is provided, comprising the light-emitting substrate as described in the above embodiment and a housing, wherein the light-emitting substrate is disposed in the housing. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] To more clearly illustrate the technical solutions of the present disclosure, the following briefly introduces the drawings required for use in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure, and those skilled in the art can also derive other drawings based on these drawings. Furthermore, the drawings described below are schematic diagrams and are not intended to limit the actual dimensions of the products, actual processes of the methods, actual timing of signals, and the like involved in the embodiments of the present disclosure.

[0041] FIG1 is a structural diagram of a display device according to some embodiments;

[0042] FIG2 is a structural diagram of another display device according to some embodiments;

[0043] FIG3 is a cross-sectional view taken along section line AA in FIG1 ;

[0044] FIG4 is another cross-sectional view along section line AA in FIG1 ;

[0045] FIG5 is a structural diagram of a light emitting device according to some embodiments;

[0046] FIG6 is a structural diagram of another light emitting device according to some embodiments;

[0047] FIG7 is a structural diagram of another light emitting device according to some embodiments;

[0048] FIG8 is a structural diagram of a light-emitting substrate according to some embodiments;

[0049] FIG9 is a simulation diagram of light extraction efficiency of a light emitting device at different slope angles according to some embodiments;

[0050] FIG10 is a diagram showing simulation results of normalized brightness of the lens structure of the light-emitting device shown in FIG6 when the lens structure comprises materials with different refractive indices;

[0051] FIG11 is a three-dimensional diagram of another light emitting substrate according to some embodiments;

[0052] FIG12 is a top view of a light emitting device according to some embodiments;

[0053] FIG13 is a diagram showing simulation results of normalized brightness of the light emitting device shown in FIG12 ;

[0054] FIG14 is a top view of another light emitting device according to some embodiments;

[0055] FIG15 is a diagram showing simulation results of normalized brightness of the light emitting device shown in FIG14 ;

[0056] FIG16 is a top view of yet another light emitting device according to some embodiments;

[0057] FIG17 is a top view of yet another light emitting device according to some embodiments;

[0058] FIG18 is a diagram showing simulation results of normalized brightness of the light-emitting devices shown in FIG16 and FIG17 ;

[0059] FIG19 is a diagram showing steps for preparing a light emitting device according to some embodiments;

[0060] FIG20 is another diagram illustrating steps for preparing a light emitting device according to some embodiments;

[0061] FIG21 is a structural diagram of yet another light-emitting substrate according to some embodiments;

[0062] FIG22 is a structural diagram of another light-emitting substrate according to some embodiments;

[0063] FIG23 is a top view of a plurality of pixel regions of a light-emitting substrate according to some embodiments;

[0064] FIG24 is a top view of multiple pixel regions of another light-emitting substrate according to some embodiments;

[0065] FIG25 is a top view of a plurality of pixel regions of yet another light-emitting substrate according to some embodiments;

[0066] FIG26 is a structural diagram of another light-emitting substrate according to some embodiments;

[0067] FIG27 is a top view of a pixel region of a light-emitting substrate according to some embodiments;

[0068] FIG28 is a light path diagram of light emitted toward an isolation structure in a light-emitting substrate according to some embodiments;

[0069] FIG29 is another light path diagram of light emitted toward the isolation structure in the light-emitting substrate according to some embodiments;

[0070] FIG30 is another light path diagram of light emitted toward the isolation structure in the light-emitting substrate according to some embodiments;

[0071] FIG31 is another light path diagram of light emitted toward the isolation structure in the light-emitting substrate according to some embodiments;

[0072] FIG32 is a simulation result diagram of normalized brightness of the light-emitting substrate shown in FIG26 excluding the lens structure;

[0073] FIG33 is a diagram showing simulation results of the brightness gain factor of the light-emitting substrate shown in FIG26;

[0074] FIG34 is a structural diagram of yet another light-emitting substrate according to some embodiments. DETAILED DESCRIPTION

[0075] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the embodiments described are only some embodiments of the present disclosure, not all embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present disclosure.

[0076] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and its other forms, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open and inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" are intended to indicate that the particular features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the particular features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0077] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0078] When describing some embodiments, the word "connected" and its derivatives may be used. The term "connected" should be understood broadly. For example, "connected" can mean mechanical or electrical connection; fixed or removable connection; or integral connection; direct connection or indirect connection through an intermediary; or internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in this document based on the specific circumstances.

[0079] “At least one of A, B and C” has the same meaning as “at least one of A, B or C” and both include the following combinations of A, B and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B and C.

[0080] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0081] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0082] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within an acceptable deviation range, wherein the acceptable deviation range is as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, that the difference between the two equals is less than or equal to 5% of either one.

[0083] In this disclosure, terms such as "lower," "below," "above," and "upper," and similar terms are used to explain the relationships between components shown in the drawings. These terms may be relative and described based on directions shown in the drawings, or based on the order in which process steps are formed, but are not limited thereto.

[0084] It will be understood that when a layer or element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present therebetween.

[0085] The term "opposite" means that the first element may be directly or indirectly opposite to the second element. In the case where a third element is interposed between the first and second elements, the first and second elements may be understood to be indirectly opposite to each other although they are still opposite to each other.

[0086] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0087] As shown in FIG. 1 , some embodiments of the present disclosure provide a display device 1000 , which may be any device that displays an image, whether in motion (eg, video) or stationary (eg, still image), and whether textual or graphic.

[0088] For example, referring to Figures 1 and 2, the display device 1000 can be any product or component with a display function, such as a television, a laptop computer, a tablet computer, a mobile phone, a personal digital assistant (PDA), a navigator, a wearable device, a projector, a virtual reality (VR) device, and an augmented reality (AR).

[0089] For example, as shown in FIG1 , the display device 1000 may be a portable display product; for example, the display device 1000 may be the mobile phone shown in FIG1 . For another example, referring to FIG2 , the display device 1000 may be a wearable device; for example, the display device 1000 may be the watch shown in FIG2 .

[0090] It should be noted that, depending on different application scenarios, the shape of the display surface of the display device 1000 is not unique. The shape of the display surface of the display device 1000 can be any one of a circle, an ellipse, a polygon or an irregular shape, and the embodiments of the present disclosure do not specifically limit this.

[0091] In some embodiments, referring to FIG. 3 and FIG. 4 , a display device 1000 includes a light emitting substrate 100 , a driving circuit board 200 , a housing 300 , and a cover plate 400 .

[0092] The cover plate 400 is disposed on the light-emitting side of the light-emitting substrate 100. The driving circuit board 200 is disposed on the non-light-emitting side of the light-emitting substrate 100 and is connected to the light-emitting substrate 100 to provide a light-emitting signal to the light-emitting substrate 100.

[0093] It should be noted that the light-emitting substrate 100 has a relative light-emitting side and a non-light-emitting side. The light-emitting side refers to the side of the light-emitting substrate 100 that can emit light (the upper side of the light-emitting substrate 100 in Figures 3 and 4), and the non-light-emitting side refers to the other side opposite to the light-emitting side (the lower side of the light-emitting substrate 100 in Figures 3 and 4).

[0094] In addition, the shell 300 can be a box-shaped structure with an opening, the light-emitting substrate 100 and the driving circuit board 200 can be arranged in the shell 300, and the cover plate 400 is arranged on the light-emitting side of the light-emitting substrate 100 and is located at the opening of the shell 300.

[0095] It should be understood that the display device 1000 may be a liquid crystal display (LCD) or a mini / micro light emitting display (MLED), which is not specifically limited in the embodiments of the present disclosure.

[0096] In some embodiments, as shown in FIG3 , the display device 1000 may be a liquid crystal display device. In this case, the light-emitting substrate 100 may serve as a backlight source in the liquid crystal display device, providing backlight for the display panel 500. The display panel 500 may adjust the intensity (grayscale) of light passing through the display panel 500 to display an image.

[0097] 3 , the display device 1000 further includes a display panel 500, which is disposed on the light-emitting side of the light-emitting substrate 100. The display panel 500 may be, for example, a liquid crystal display panel.

[0098] The light emitting substrate 100 can directly emit white light, which is then emitted to the display panel 500 after being homogenized. The display panel 500 adjusts the intensity (grayscale) of the light passing through the display panel 500 and performs color conversion to achieve full-color display.

[0099] Alternatively, the light-emitting substrate 100 may also emit light of other colors (eg, blue), which is then emitted to the display panel 500 after color conversion and uniform light processing. The display panel 500 adjusts the light intensity (grayscale) passing through the display panel 500 to achieve full-color display.

[0100] Alternatively, the light emitting substrate 100 can emit light of multiple colors (such as red, blue and green), which is then emitted to the display panel 500 after uniform light processing. The display panel 500 adjusts the intensity (grayscale) of the light passing through the display panel 500 to achieve full-color display.

[0101] In other embodiments, referring to FIG4 , the display device 1000 may be a micro-luminescent display device, in which case the light-emitting substrate 100 may serve as a display panel of the micro-luminescent display device to directly display.

[0102] The light-emitting substrate 100 can directly emit white light or light of other colors (such as blue) and realize full-color display through color conversion. Alternatively, the light-emitting substrate 100 can directly emit light of multiple colors (such as red, blue and green) to realize full-color display.

[0103] The following uses the display device 1000 as a micro-luminescent display device as an example to exemplify some embodiments of the present disclosure, but the implementation of the present disclosure is not limited thereto, and any other display device can also be considered as long as the same technical concept is applied.

[0104] In some embodiments, referring to Figures 3 and 4, the light-emitting substrate 100 includes a driving backplane 10 and a light-emitting device 20. The light-emitting device 20 is disposed on the driving backplane 10 and connected to the driving backplane 10 to receive a first voltage signal and a second voltage signal, thereby driving the light-emitting device 20 to emit light.

[0105] It should be noted that the first voltage signal and the second voltage signal are different, and the first voltage signal and the second voltage signal are used to provide a power supply voltage to the light emitting device 20 .

[0106] The orthographic projection of the light-emitting device 20 on the driver backplane 10 can be any of a circular, elliptical, and polygonal shape. Furthermore, the light-emitting device 20 can include Micro LEDs and / or Mini LEDs. For example, the radial length of the orthographic projection of the Micro LED on the driver backplane 10 is less than 50 μm, such as 10 μm to 50 μm. For another example, the radial length of the orthographic projection of the Mini LED on the driver backplane 10 is 50 μm to 150 μm, such as 80 μm to 120 μm.

[0107] It should be noted that the radial length of an orthographic projection refers to the length of a line segment connecting two points on the orthographic projection's boundary, where the connecting line passes through the projection's geometric center. For example, if the orthographic projection is a quadrilateral, the radial length includes the length of the sides and the length of the diagonal. For example, if the orthographic projection is a circle, the radial length is the diameter.

[0108] In related art, the display brightness of a display device using Micro LED or Mini LED near the normal viewing angle (for example, an angle less than or equal to 30° from the normal viewing angle) is similar to the display brightness at a wide viewing angle (for example, an angle greater than 30° from the normal viewing angle). The normal viewing angle is perpendicular to the display surface of the display device, that is, perpendicular to the surface of the light-emitting side of the light-emitting substrate.

[0109] However, in technical fields such as AR display and projection display, in Micro LED or Mini LED display devices, the light received by the human eye mainly comes from the light near the normal viewing angle. A large amount of light cannot be received and utilized by the human eye, resulting in low efficiency of the light that can be effectively utilized by Micro LED or Mini LED, thereby leading to higher power consumption of the display device.

[0110] Based on this, referring to FIG. 5 , FIG. 6 and FIG. 7 , some embodiments of the present disclosure provide a light-emitting device 20 including a first electrode 21 , a light-emitting stacked layer 22 and at least one lens structure 30 .

[0111] In some examples, as shown in Figures 5 and 8, the first electrode 21 is configured to connect to the pad 121 of the driving backplane 10 to receive the first voltage signal. Exemplarily, the driving backplane 10 further includes the pad 121, and the first electrode 21 of the light-emitting device 20 is connected to the pad 121 of the driving backplane 10. The orthographic projection of the first electrode 21 on the pad 121 can be located within the boundary of the pad 121, for example, to facilitate alignment and connection between the light-emitting device 20 and the pad 121.

[0112] It should be noted that the material of the first electrode 21 includes a metal material. Exemplarily, the material of the first electrode 21 includes at least one of nickel, gold, copper and silver.

[0113] In some examples, as shown in Figures 5, 6, and 7, the light-emitting stacked layer 22 is disposed on one side of the first electrode 21 (the lower side in Figures 5, 6, and 7) and is connected to the first electrode 21. The light-emitting stacked layer 22 includes a quantum well layer 222, and a first semiconductor doping layer 221 and a second semiconductor doping layer 223 disposed on opposite sides of the quantum well layer 222.

[0114] It should be noted that one of the first semiconductor doping layer 221 and the second semiconductor doping layer 223 is an N-type doped semiconductor layer, and the other is a P-type doped semiconductor layer. For example, the material of the first semiconductor doping layer 221 is an N-type doped semiconductor layer, and the material of the second semiconductor doping layer 223 is P-type doped gallium nitride. The material of the quantum well layer 222 includes gallium nitride and / or indium gallium nitride.

[0115] Figure 9 is a simulation diagram of the light extraction efficiency of a light-emitting device at different slope angles according to some embodiments. Light extraction efficiency is the ratio of the emitted light to the light emitted by the light-emitting device 20. In Figure 9, 4*4, 6*6, 8*8, 10*10, and 20*20 represent light-emitting devices 20 with a square orthographic projection on the driver backplane 10, and side lengths of 4μm, 6μm, 8μm, 10μm, and 20μm, respectively.

[0116] As shown in Figures 5, 6, and 7, the boundaries of the two surfaces of the light-emitting stacked layer 22 and the first electrode 21 that are away from each other are connected to form a slope. The slope angle refers to the angle ɑ between the slope and the surface of the light-emitting stacked layer 22 away from the first electrode 21. As can be seen from Figure 9, when the angle ɑ between the slope and the surface of the light-emitting stacked layer 22 away from the first electrode 21 is 50° to 60°, the light extraction efficiency of light-emitting devices 20 of different sizes is relatively high. Based on this, in the light-emitting device 20 provided by the present disclosure, the angle ɑ between the slope and the surface of the light-emitting stacked layer 22 away from the first electrode 21 can be, for example, 50° to 60°.

[0117] In some examples, as shown in Figures 5, 6, and 7, the lens structure 30 is disposed opposite the light emitting stack 22 and is located on a side of the light emitting stack 22 away from the first electrode 21. Here, the term "oppositely disposed" refers to the orthographic projection of the lens structure 30 on the driver backplane 10, which may partially overlap or completely overlap with the orthographic projection of the light emitting stack 22 on the driver backplane 10. The lens structure 30 is configured to converge light emitted from the light emitting stack 22 toward the lens structure 30 toward the central region of the lens structure 30.

[0118] It should be noted that the transmittance of the lens structure 30 may be greater than or equal to 90%. The refractive index of the material of the lens structure 30 may be 1.5 to 2.5. The material of the lens structure 30 includes at least one of gallium nitride, transparent silicone and transparent resin.

[0119] In this case, the converging effect of the lens structure 30 can converge more light toward the positive viewing direction Z, thereby increasing the total luminous flux near the positive viewing direction Z, thereby increasing the light that can be received and utilized by the human eye, improving the efficiency of the light that can be effectively utilized by the light-emitting device 20, and reducing the power consumption of the display device 1000.

[0120] In addition, the refractive index of the material of the lens structure 30 may be 1.5 to 2.5. For example, the refractive index of the material of the lens structure 30 is 1.5 to 2. For example, the refractive index of the material of the lens structure 30 is any one of 1.5, 1.56, 1.6, 1.67, 1.7, 1.74, 1.8, 1.83, 1.9, 1.95, 2, 2.1, 2.2, 2.3, 2.4, and 2.5.

[0121] It should be understood that the smaller the refractive index of the lens structure 30, the less likely it is for light to be totally reflected when it is emitted from the lens structure 30 into a medium with a lower refractive index (such as air). This makes it easier for the lens structure 30 to focus more light near the normal viewing angle direction Z. Therefore, a refractive index of 1.5 to 2.5 can further increase the total luminous flux near the normal viewing angle direction Z, increase the light that can be received and utilized by the human eye, improve the efficiency of the light that can be effectively utilized by the light-emitting device 20, and reduce the power consumption of the display device 1000.

[0122] Figure 10 shows simulation results of normalized brightness for the lens structure of the light-emitting device shown in Figure 6 using materials with different refractive indices. The ordinate in Figure 10 represents normalized brightness, which refers to the ratio of the brightness near the normal viewing angle Z to the brightness near the normal viewing angle Z in the related art.

[0123] It should be noted that, near the normal viewing angle direction Z refers to an angle with the normal viewing angle direction Z that is less than or equal to 30°. The following simulation is performed using an angle with the normal viewing angle direction Z that is less than or equal to 18° as an example.

[0124] As shown in FIG10 , when the refractive index of the material of the lens structure 30 is 2.5, the brightness gain near the normal viewing angle direction Z is approximately 15%. When the refractive index of the material of the lens structure 30 is 2, the brightness gain near the normal viewing angle direction Z is approximately 24%. When the refractive index of the material of the lens structure 30 is 1.5, the brightness gain near the normal viewing angle direction Z is approximately 28%.

[0125] In some embodiments, as shown in Figures 5, 6, and 7, lens structure 30 includes a first surface 30A and a second surface 30B disposed opposite light emitting stack 22. First surface 30A is a plane, second surface 30B is a curved surface (e.g., a spherical surface), and second surface 30B is located on the side of first surface 30A away from light emitting stack 22. In other words, lens structure 30 is a plano-convex lens, which has a simple structure, facilitates optical design, and has low manufacturing difficulty.

[0126] 5 and 6 , the shape of the lens structure 30 is substantially a spherical segment. For example, the shape of the lens structure 30 is substantially a hemisphere, and the manufacturing process is simple and the manufacturing cost is low.

[0127] Exemplarily, referring to FIG7 , the lens structure 30 includes a first lens portion 31 and a second lens portion 32 . The second lens portion 32 is disposed on a side of the first lens portion 31 away from the driving back plate 10 . The first lens portion 31 is cylindrical, and the second lens portion 32 is a spherical segment.

[0128] It is understood that, when the thickness of the lens structure 30 (the thickness along the major axis of the plano-convex lens) remains unchanged, the larger the radius of the first surface 30A of the lens structure 30, the lower the lens's convergence power. Based on this, along the major axis of the lens structure 30, the ratio of the thickness of the lens structure 30 to the radius of the first surface 30A of the lens structure 30 can be 0.3 to 1 to achieve a better brightness gain effect.

[0129] For example, the ratio of the thickness of the lens structure 30 to the radius of the first surface 30A of the lens structure 30 may be 0.85 to 0.1. For example, the ratio of the thickness of the lens structure 30 to the radius of the first surface 30A of the lens structure 30 may be any one of 0.3, 0.35, 0.4, 0.45, 0.5, 0.55, 0.6, 0.65, 0.7, 0.75, 0.8, 0.85, 0.9, 0.95, and 1.

[0130] For example, the thickness of the lens structure 30 is 3 μm, and the radius of the first surface 30A of the lens structure 30 is 4.5 μm. For example, the thickness of the lens structure 30 is 3 μm, and the radius of the first surface 30A of the lens structure 30 is 3 μm. For another example, the thickness of the lens structure 30 is 1.5 μm, and the radius of the first surface 30A of the lens structure 30 is 3 μm.

[0131] It should be understood that, according to different design requirements, the light emitting device 20 may include one lens structure 30 or may include a plurality of lens structures 30 arranged at intervals.

[0132] In some embodiments, as shown in Fig. 11, the light emitting device 20 includes a lens structure 30. In this case, when the light emitting device 20 includes a lens structure 30, different variables are controlled to perform simulation.

[0133] FIG12 is a top view of a light emitting device according to some embodiments; FIG13 is a simulation result diagram of normalized brightness of the light emitting device shown in FIG12 .

[0134] As shown in Figures 11 and 12 , the light emitting device 20 includes a lens structure 30, and the orthographic projection of the light emitting device 20 on the driving backplane 10 is a circle. Here, along the principal axis of the lens structure 30, the ratio of the thickness of the lens structure 30 to the radius of the first surface 30A of the lens structure 30 can be 0.3 to 1.

[0135] On this basis, taking a light-emitting device 20 with a radius of 5 μm and a first surface 30A of the lens structure 30 with a radius of 4.5 μm as an example, simulations were conducted on the lens structure 30 at different thicknesses. The simulation results are shown in FIG13 . As can be seen from FIG13 , when the lens structure 30 has a thickness of 3 μm, the brightness gain near the normal viewing angle direction Z is approximately 15%, and the brightness gains corresponding to other thicknesses are also approximately 10%.

[0136] FIG14 is a top view of another light emitting device according to some embodiments; FIG15 is a simulation result diagram of normalized brightness of the light emitting device shown in FIG14 .

[0137] 11 and 14 , the light emitting device 20 includes a lens structure 30, and the orthographic projection of the light emitting device 20 on the driver backplane 10 is a rectangle. Here, along the principal axis of the lens structure 30, the ratio of the thickness of the lens structure 30 to the radius of the first surface 30A of the lens structure 30 can be 0.85 to 1.

[0138] On this basis, taking a light-emitting device 20 with a length of 10 μm and a width of 5 μm, and a lens structure 30 with a thickness of 3 μm as an example, simulations were conducted on the first surface 30A of the lens structure 30 at different diameters. The simulation results are shown in FIG15 . As can be seen from FIG15 , when the diameters of the first surface 30A of the lens structure 30 are 6 μm and 7 μm, the brightness gain near the normal viewing angle direction Z is approximately 10%.

[0139] In other embodiments, referring to Figures 16 and 17 , the light-emitting device 20 may include a plurality of lens structures 30 spaced apart, with the orthographic projections of the plurality of lens structures 30 on a reference plane being symmetrical about the geometric center of the orthographic projection of the light-emitting stack 22 on the reference plane. This ensures a more uniform gain effect of the light-emitting device 20 and prevents a shift in the light-emitting center. The reference plane is the plane where the surface of the first electrode 21 close to the light-emitting stack 22 is located.

[0140] On this basis, the orthographic projections of the multiple lens structures 30 on the reference plane can be located within the range of the orthographic projections of the light-emitting stack 22 on the reference plane. Furthermore, based on the area of ​​the light-emitting device 20 and the area and number of the lens structures 30, the spacing between the multiple lens structures 30 can be relatively large or relatively small.

[0141] For example, as shown in FIG16 , the light emitting device 20 includes four lens structures 30, and the four lens structures 30 are centrally arranged. In this case, the minimum distance between the boundaries of two adjacent lens structures 30 can be 0 μm to 0.5 μm, and the minimum distance between the boundary of the lens structure 30 and the boundary of the light emitting stack layer 22 can be greater than 0.5 μm.

[0142] For example, as shown in FIG17 , the light-emitting device 20 includes four lens structures 30, and the four lens structures 30 are dispersed. In this case, the minimum distance between the orthographic projection of the boundary of the lens structure 30 on the reference plane and the orthographic projection of the boundary of the light-emitting stacked layer 22 on the reference plane can be 0 μm to 0.5 μm, and the spacing between the boundaries of two adjacent lens structures 30 can be greater than 0.5 μm.

[0143] Figure 18 is a simulation result of the normalized brightness of the light-emitting devices shown in Figures 16 and 17. Taking the radius of the light-emitting device 20 as 5μm, the radius of the first surface 30A of the lens structure 30 as 3μm, and the thickness of the lens structure 30 as 1.5μm as an example, simulations were performed on the light-emitting devices 20 shown in Figures 16 and 17, respectively. The simulation results are shown in Figure 18. As can be seen from Figure 18, when the light-emitting device 20 is the light-emitting device 20 shown in Figure 16, that is, when the four lens structures 30 are arranged in a concentrated manner, the brightness gain near the normal viewing angle direction Z is approximately 25%. When the light-emitting device 20 is the light-emitting device 20 shown in Figure 17, that is, when the four lens structures 30 are arranged in a dispersed manner, the brightness gain near the normal viewing angle direction Z is approximately 10%.

[0144] It should be noted that, based on the area of ​​the light-emitting device 20, the area and number of the lens structures 30, when the spacing between the boundaries of two adjacent lens structures 30 is 0μm to 0.5μm, the minimum distance between the boundary of the lens structure 30 and the boundary of the light-emitting stack layer 22 can also be 0μm to 0.5μm, and the embodiments of the present disclosure do not make specific limitations on this.

[0145] In some embodiments, as shown in Figures 5, 6 and 7, the light-emitting device 20 further includes a second electrode 23, which is disposed on a side of the light-emitting stack layer 22 away from the first electrode 21 and connected to the light-emitting stack layer 22 to transmit a second voltage signal.

[0146] In the light-emitting substrate 100, as shown in Figure 8, the second electrodes 23 of multiple light-emitting devices 20 can be connected to form a continuous layer structure. That is, the second electrodes 23 of multiple light-emitting devices 20 are connected to form a whole surface electrode, which is simple to prepare and low in cost.

[0147] It should be noted that the second electrode 23 is the light-emitting side of the light-emitting device 20, and the transmittance of the second electrode 23 can be greater than or equal to 99%. Exemplarily, the material of the second electrode 23 includes a transparent metal material, for example, the material of the second electrode 23 includes indium tin oxide and / or indium zinc oxide.

[0148] On this basis, the lens structure 30 can be located between the second electrode 23 and the light-emitting stacked layer 22 , or can be located on a side of the second electrode 23 away from the light-emitting stacked layer 22 .

[0149] In some embodiments, as shown in FIG5 , the lens structure 30 is located between the second electrode 23 and the light-emitting stack 22. In this case, the lens structure 30 can be made of gallium nitride. Thus, during the fabrication of the light-emitting device 20, the gallium nitride serving as the buffer layer need not be completely removed, and the lens structure 30 can be formed directly using a patterning process, resulting in a simpler process and lower costs.

[0150] For example, as shown in FIG19 , a buffer layer 12 and a light-emitting stacked layer 22 are sequentially formed on a first substrate 11, the light-emitting stacked layer 22 is connected to a second substrate 13, and the first substrate 11 is removed. The first substrate 11 is used to grow the buffer layer 12 and the light-emitting stacked layer 22, and the area of ​​the second substrate 13 can be larger than that of the first substrate 11 to simultaneously prepare more light-emitting devices 20 and improve production efficiency.

[0151] On this basis, the buffer layer 12 is patterned to form a lens structure 30. Then, a second electrode 23 and an encapsulation layer 120 are formed on the side of the lens structure 30 away from the second substrate 13 (the specific structure can be seen below), the encapsulation layer 120 is connected to the third substrate 14 through a bonding glue 15, and the second substrate 13 is removed. Finally, the light-emitting stacking layer 22 is patterned, and the first electrode 21, the passivation layer 24 (the specific structure can be seen below) and the second reflective layer 25 (the specific structure can be seen below) are formed in sequence. At this point, the multiple light-emitting devices 20 on the third substrate 14 can be synchronously bonded to the same driving backplane 10, and then the third substrate 14 can be removed to form a light-emitting substrate 100.

[0152] For example, as shown in FIG20 , a buffer layer 12 and a light-emitting stacked layer 22 are sequentially formed on a first substrate 11, and the buffer layer 12 and the light-emitting stacked layer 22 are transferred to a second substrate 13, and the buffer layer 12 is connected to the second substrate 13. The first substrate 11 is used to grow the buffer layer 12 and the light-emitting stacked layer 22, and the area of ​​the second substrate 13 can be larger than that of the first substrate 11, so that more light-emitting devices 20 can be prepared simultaneously, thereby improving production efficiency.

[0153] On this basis, the light-emitting stack layer 22 is patterned, and the first electrode 21, the passivation layer 24 (the specific structure can be seen below) and the second reflective layer 25 (the specific structure can be seen below) are formed in sequence. Then, the multiple light-emitting devices 20 on the second substrate 13 can be synchronously bonded to the same driving backplane 10, and then the second substrate 13 is removed. Finally, the buffer layer 12 is patterned to form a lens structure 30, and the second electrode 23 and the encapsulation layer 120 are formed on the side of the lens structure 30 away from the third substrate 14 (the specific structure can be seen below), thereby forming a light-emitting substrate 100.

[0154] It should be understood that, as shown in Figures 5, 12 and 14, when the lens structure 30 is located between the second electrode 23 and the light-emitting stack layer 22, and the light-emitting device 20 includes a lens structure 30, the orthographic projection of the lens structure 30 on the reference plane is located within the range of the orthographic projection of the light-emitting stack layer 22 on the reference plane, and the orthographic projection of the lens structure 30 on the reference plane partially overlaps with the orthographic projection of the light-emitting stack layer 22 on the reference plane, so that the second electrode 23 is overlapped with the light-emitting stack layer 22 and the second voltage signal is transmitted to the light-emitting stack layer 22.

[0155] For example, as shown in Figures 5 and 12, the light-emitting device 20 includes a lens structure 30, and the distance between the boundary of the orthographic projection of the lens structure 30 on the reference plane and the boundary of the orthographic projection of the light-emitting stack layer 22 on the reference plane is greater than or equal to 0.5 μm, so that the first electrode 21 and the light-emitting stack layer 22 can form a good conductive contact.

[0156] It should be noted that when the radial length of the orthographic projection of the light-emitting device 20 on the reference plane is 4μm to 10μm, the distance between the boundary of the orthographic projection of the lens structure 30 on the reference plane and the boundary of the orthographic projection of the light-emitting stack layer 22 on the reference plane is less than or equal to 3μm, so that the brightness gain effect near the orthographic viewing angle direction Z of the light-emitting device 20 is better.

[0157] In other embodiments, as shown in FIG6 , the lens structure 30 is located on a side of the second electrode 23 away from the light-emitting stack 22. In this case, the material of the lens structure 30 may include transparent silicone and / or transparent resin. Thus, during the preparation of the light-emitting device 20, the lens structure 30 can be directly formed through coating and patterning processes, which is simple and low-cost.

[0158] On this basis, the orthographic projection of the light-emitting stacked layer 22 on the reference plane can be within the range of the orthographic projection of the lens structure 30 on the reference plane, and can completely overlap. Of course, the orthographic projection of the lens structure 30 on the reference plane can also be within the range of the orthographic projection of the light-emitting stacked layer 22 on the reference plane, and this is not specifically limited in the embodiments of the present disclosure.

[0159] In some embodiments, referring to FIG. 5 and FIG. 6 , the radial length of the orthographic projection of the light emitting device 20 on the reference plane is 4 μm to 10 μm.

[0160] At this time, the size of the light-emitting surface N of the light-emitting device 20 (the surface of the light-emitting stacked layer 22 close to the second electrode 23) is small, the radius of the first surface 30A of the lens structure 30 can be set relatively small, and the thickness of the lens structure 30 can be larger, that is, the curvature radius of the second surface 30B of the lens structure 30 can be set smaller.

[0161] On this basis, based on the calculation formula for the focal length of a plano-convex lens, it can be seen that the focal length of the lens structure 30 is relatively short. In this case, the lens structure 30 can be located between the second electrode 23 and the light-emitting stack layer 22, or the lens structure 30 can be located on the side of the second electrode 23 away from the light-emitting stack layer 22 and directly contact the second electrode 23. The distance between the light-emitting surface N of the light-emitting device 20 and the focal point of the lens structure 30 is relatively close, which can allow more light to converge near the normal viewing angle direction Z after passing through the lens structure 30, thereby achieving a better brightness gain effect.

[0162] The calculation formula of the focal length of the plano-convex lens is as follows: f=r1 / (n1-n2).

[0163] f is the focal length, r1 is the curvature radius corresponding to the second surface 30B of the lens structure 30, n1 is the refractive index of the lens structure 30, and n2 is the refractive index of the medium outside the second surface 30B of the lens structure 30. For example, if the outside of the second surface 30B of the lens structure 30 is air, n2 is approximately 1.

[0164] In other embodiments, referring to FIG. 7 , the radial length of the orthographic projection of the light emitting device 20 on the reference plane may be 5 μm to 50 μm.

[0165] At this time, the light emitting surface N of the light emitting device 20 is large, and the radius of the first surface 30A of the lens structure 30 is large. In addition, due to the fluidity of the glue, the thickness of the lens structure 30 cannot be set very thick, so the curvature radius of the second surface 30B of the lens structure 30 is small.

[0166] On this basis, based on the calculation formula of the focal length of a plano-convex lens, it can be seen that the focal length of the lens structure 30 is relatively long. In this case, when the lens structure 30 can be located between the second electrode 23 and the light-emitting stacked layer 22, or when the lens structure 30 is located on the side of the second electrode 23 away from the light-emitting stacked layer 22 and is in direct contact with the second electrode 23, the distance between the light-emitting surface N of the light-emitting device 20 and the focal point of the lens structure 30 is relatively far.

[0167] Based on this, referring to Figure 7, the lens structure 30 is located on the side of the second electrode 23 away from the light-emitting stack layer 22, and the light-emitting device 20 also includes a pad portion 40, which is arranged between the lens structure 30 and the second electrode 23 to increase the distance between the light-emitting surface N of the light-emitting device 20 and the lens structure 30, so that the light-emitting surface N of the light-emitting device 20 is closer to the focus of the lens structure 30, so that more light can converge near the positive viewing angle direction Z after passing through the lens structure 30, thereby obtaining a better brightness gain effect.

[0168] In the light-emitting substrate 100, as shown in Figure 21, the spacers 40 of multiple light-emitting devices 20 can be connected to form a continuous layer structure. That is, the spacers 40 of multiple light-emitting devices 20 are connected to form a full-surface spacer layer, which is simple to prepare and low in cost.

[0169] In some embodiments, the refractive index of the material of the lens structure 30 can be greater than the refractive index of the material of the spacer portion 40. In this way, light traveling from the spacer portion 40 (with a smaller refractive index) toward the lens structure 30 (with a larger refractive index) will further approach the normal viewing angle direction Z, thereby further increasing the total luminous flux near the normal viewing angle direction Z, increasing the light that can be received and utilized by the human eye, improving the efficiency of light that can be effectively utilized by the light-emitting device 20, and reducing the power consumption of the display device 1000.

[0170] It should be noted that the difference between the refractive index of the material of the lens structure 30 and the refractive index of the material of the spacer portion 40 may be less than or equal to 0.2.

[0171] In some embodiments, referring to Figures 5, 6, and 7, the light-emitting device 20 further includes a passivation layer 24. The passivation layer 24 covers the side surfaces of the first electrode 21 and the light-emitting stack 22 to provide insulation protection. The passivation layer 24 may completely expose the surface of the first electrode 21 away from the light-emitting stack 22, or may cover a portion of the surface of the first electrode 21 away from the light-emitting stack 22. This is not specifically limited in the present disclosure.

[0172] It should be noted that the material of the passivation layer 24 includes an inorganic material. For example, the material of the passivation layer 24 includes at least one of silicon oxide, silicon nitride, and aluminum oxide.

[0173] In some embodiments, referring to Figures 5, 6, and 7, the light-emitting device 20 further includes a second reflective layer 25. The second reflective layer 25 covers the surface of the passivation layer 24 away from the light-emitting stack layer 22 to prevent light leakage from the side of the light-emitting device 20 and improve the light extraction efficiency of the light-emitting device 20. Moreover, when the light-emitting substrate 100 includes a plurality of light-emitting devices 20 with different luminous colors, the second reflective layer 25 can also prevent crosstalk between adjacent light-emitting devices 20, thereby improving the display effect. The second reflective layer 25 can completely expose the surface of the first electrode 21 away from the light-emitting stack layer 22, or it can cover the surface of the first electrode 21 away from the light-emitting stack layer 22, which is not specifically limited in the embodiments of the present disclosure.

[0174] It should be noted that the material of the second reflective layer 25 includes a reflective metal. Exemplarily, the material of the second reflective layer 25 includes at least one of titanium, platinum, and aluminum.

[0175] 21 and 22 , the light-emitting substrate 100 provided in some embodiments of the present disclosure further includes an isolation structure 50 . The isolation structure 50 is disposed on a side of the light-emitting device 20 away from the driving backplane 10 .

[0176] 23 , 24 , and 25 , the isolation structure 50 is provided with a plurality of first via holes 510 . Each first via hole 510 exposes one pixel region P. Each pixel region P may correspond to one light-emitting device 20 , and the light-emitting region of the light-emitting device 20 is located within the corresponding pixel region P. That is, one light-emitting device 20 is exposed by one first via hole 510 .

[0177] It should be noted that the radial length of a pixel region P may be, for example, 10 μm to 100 μm. The shape of the first via hole 510 may be circular or polygonal, which is not specifically limited in the embodiment of the present disclosure.

[0178] In this case, an isolation structure 50 is provided between the pixel areas P corresponding to adjacent light-emitting devices 20. The isolation structure 50 can prevent crosstalk between adjacent light-emitting devices 20 and improve the brightness uniformity of the light-emitting substrate 100. Furthermore, when the light-emitting substrate 100 includes multiple light-emitting devices 20 emitting different colors, the isolation structure 50 can prevent color shift problems caused by crosstalk between adjacent light-emitting devices 20.

[0179] In addition, as shown in FIG23 , the isolation structure 50 may further include a plurality of second via holes 520, which are staggered with the first via holes 510. Each second via hole 520 exposes a corresponding pixel region P. The pixel region P exposed by the second via hole 520 may serve as a common cathode region D. The second electrode 20 may be connected to the driving backplane 10 in the common cathode region D to reduce voltage drop and improve brightness uniformity of the light-emitting substrate 100.

[0180] It should be noted that the shape of the second via hole 520 can be circular or polygonal, which is not specifically limited in the embodiment of the present disclosure.

[0181] In some embodiments, referring to Figure 22, the second electrode 23 is arranged on the side of the light-emitting stack layer 22 away from the first electrode 21, and the isolation structure 50 is electrically connected to the second electrode 23, that is, the material of the isolation structure 50 includes a conductive material, which can reduce the resistance of the second electrode 23, thereby reducing the voltage drop, reducing the difference in the second voltage signals of the multiple light-emitting devices 20, and improving the brightness uniformity of the light-emitting substrate 100.

[0182] In some embodiments, referring to FIG22 , the light-emitting substrate 100 emits a single color (e.g., blue) of light. In this case, the light-emitting substrate 100 further includes a color conversion layer 110 disposed on the light-emitting side of the light-emitting substrate 100. The color conversion layer 110 is used to convert the color of the single color light emitted by the light-emitting substrate 100, thereby achieving full-color display.

[0183] 22 , the color conversion layer 110 includes a plurality of quantum dot films 111 , one quantum dot film 111 being disposed in one first via hole 510 . Furthermore, the plurality of quantum dot films 111 include a first quantum dot film 101 , a second quantum dot film 102 , and a third quantum dot film 103 .

[0184] The first quantum dot film 101 is configured to emit light of a first color when illuminated by the light emitted by the light-emitting device 20. The second quantum dot film 102 is configured to emit light of a second color when illuminated by the light emitted by the light-emitting device 20. The third quantum dot film 103 is configured to transmit the light emitted by the light-emitting device 20, and the light emitted by the light-emitting device 20 is a third color. The first, second, and third colors are three primary colors, for example, the first color is red, the second color is green, and the third color is blue.

[0185] It should be noted that, when the isolation structure 50 is provided with a plurality of second via holes 520, a portion of the third quantum dot film 103 may also be disposed in the second via holes 520. The third quantum dot film 103 includes a transparent resin and / or scattering particles, and the scattering particles include titanium dioxide and / or silicon dioxide.

[0186] On this basis, as shown in FIG22 , the light-emitting substrate 100 further includes a transflective module 60, which covers the first quantum dot film 101 and the second quantum dot film 102. The transflective module 60 is configured to reflect light of the third color and transmit light of the first and second colors. This allows the portion of the third color light emitted by the light-emitting device 20 that passes through the first and second quantum dot films 101 and 102 to be reflected to the color conversion layer 110 for further conversion, thereby increasing the amount of light that can be received and utilized by the human eye, improving the brightness of the light-emitting substrate 100, and reducing power consumption.

[0187] In other embodiments, as shown in Figures 8 and 21, the light-emitting substrate 100 emits white light or light of multiple colors (e.g., red, blue, and green). In this case, the light-emitting substrate 100 further includes an encapsulation layer 120, which is disposed on a side of the light-emitting device 20 away from the driving backplane 10 and covers the light-emitting device 20 and the isolation structure 50 for protection.

[0188] It should be noted that the two opposite surfaces of the encapsulation layer 120 may have the same morphology, that is, the thickness of the encapsulation layer 120 may be uniform. Alternatively, the surface of the encapsulation layer 120 away from the light emitting device 20 may be flat, and the encapsulation layer 120 may also play a flat role.

[0189] In the above formula for calculating the focal length of the plano-convex lens, n2 is the refractive index of the encapsulation layer 120. Based on the formula for calculating the focal length of the plano-convex lens, the refractive index of the material of the lens structure 30 of the light-emitting device 20 should be greater than the refractive index of the material of the encapsulation layer 120. For example, the difference between the refractive index of the material of the lens structure 30 of the light-emitting device 20 and the refractive index of the material of the encapsulation layer 120 is less than or equal to 0.2.

[0190] In some embodiments, as shown in FIG21 , the first via 510 increases in size in multiple cross-sections parallel to the plane of the driver backplate 10, along a direction perpendicular to the driver backplate 10 and pointing from the driver backplate 10 toward the light-emitting device 20. The plane of the driver backplate 10 may be the plane of the surface of the driver backplate 10 away from the light-emitting device 20. In other words, the isolation structure 50 is tilted on the exposed side of the first via 510, with a larger opening at the end away from the driver backplate 10.

[0191] In this case, referring to FIG. 26 , light emitted by the light emitting device 20 at a relatively small angle with the normal viewing direction Z (e.g., an angle less than or equal to 30° with the normal viewing direction Z) is converged and emitted through the lens structure 30. A portion of the light emitted by the light emitting device 20 at a relatively large angle with the normal viewing direction Z (e.g., an angle greater than 30° with the normal viewing direction Z) can be irradiated onto the isolation structure 50 and reflected to be emitted in a direction near the normal viewing direction Z (e.g., an angle less than or equal to 30° with the normal viewing direction Z), thereby increasing the amount of light that can be received and utilized by the human eye, improving the efficiency of light that can be effectively utilized by the light emitting device 20, and reducing the power consumption of the display device 1000.

[0192] It is understood that in a cross section of the first via 510 perpendicular to the plane of the driver backplate 10, the side of the isolation structure 50 exposed in the first via 510 corresponds to the side edge of the cross section. The side edge can be a curve or a straight line. For example, as shown in FIG21 , the cross section of the first via 510 perpendicular to the plane of the driver backplate 10 is trapezoidal, that is, the side edge is a straight line. This simplifies the manufacturing process of the first via 510.

[0193] On this basis, referring to FIG. 27 and FIG. 28 , the range of the angle θ between the side of the trapezoid and the normal viewing angle direction Z can be obtained through calculation and simulation to obtain a larger brightness gain magnification η.

[0194] As shown in Figures 27 and 28, the light reflected at the end of the side of the isolation structure 50 exposed by the first via 510, away from the light-emitting surface N, and emitted along the normal viewing direction Z is the first light ray S1. The light reflected at the end of the side of the isolation structure 50 exposed by the first via 510, close to the light-emitting surface N, and emitted along the normal viewing direction Z is the second light ray S2.

[0195] Moreover, the end of the light emitting surface N between the first light S1 and the second light S2 close to the first light S1 is the first end, and the end of the light emitting surface N between the first light S1 and the second light S2 close to the second light S2 is the second end.

[0196] On this basis, referring to Figures 27 and 28 , the area of ​​the light-emitting surface N is M1. The portion between the projection of the first end along the first light ray S1 onto the plane where the surface of the isolation structure 50 close to the light-emitting surface N is located and the projection of the second end along the second light ray S2 onto the plane where the surface of the isolation structure 50 close to the light-emitting surface N is located is the brightness gain region G, and the area of ​​the brightness gain region G is M2.

[0197] At this time, the brightness gain magnification η satisfies the following formula: η=M1 / M2.

[0198] Furthermore, the first light ray S1 intersects the plane of the surface of the isolation structure 50 near the light-emitting surface N at point A, and intersects the plane of the light-emitting surface N at point B. Along a direction parallel to the light-emitting surface N, the distance between the intersection A and the end of the side of the isolation structure 50 exposed by the first via 510, away from the light-emitting surface N, is a, and the distance between the intersection B and the end of the side of the isolation structure 50 exposed by the first via 510, away from the light-emitting surface N, is b. The second light ray S2 intersects the plane of the light-emitting surface N at point C. Along a direction parallel to the light-emitting surface N, the distance between the intersection C and the end of the side of the isolation structure 50 exposed by the first via 510, away from the light-emitting surface N, is c. Along a direction parallel to the light-emitting surface N, the distance between the upper and lower boundaries of the side of the isolation structure 50 exposed by the first via 510, is d.

[0199] Based on the above, let's take the case where the orthographic projection of the light-emitting surface N of the light-emitting device 20 on the driver backplane 10 is a circle. In this case, the radius of the light-emitting surface N is r, and the distance between the center of the light-emitting surface N and the end of the side of the isolation structure 50 exposed by the first via 510, away from the light-emitting surface N, along a direction parallel to the light-emitting surface N is R. Based on the positional relationship between the first light ray S1 and the second light ray S2 and the light-emitting surface N, the brightness gain factor η can be specifically categorized into the following multiple examples.

[0200] In Example 1, as shown in FIG29 , both the first light ray S1 and the second light ray S2 intersect the light-emitting surface N, and the intersection points B and C are both located on the side of the center of the light-emitting surface N close to the side where the first light ray S1 and the second light ray S2 emerge. In this case, the brightness gain factor η specifically satisfies the following formula:

[0201] In Example 2, as shown in Figure 30, the first light ray S1 intersects the light-emitting surface N, and the intersection point B is located on the side of the center of the light-emitting surface N close to the exit of the first light ray S1 and the second light ray S2. The intersection point C of the second light ray S2 with the plane of the light-emitting surface N is located on the side of the light-emitting surface N close to the exit of the first light ray S1 and the second light ray S2. In this case, the brightness gain magnification η specifically satisfies the following formula:

[0202] In Example 3, as shown in Figure 31, the intersection B of the first light ray S1 and the plane of the light-emitting surface N is located on the side of the light-emitting surface N away from the exit of the first light ray S1 and the second light ray S2. The second light ray S2 intersects the light-emitting surface N, and the intersection C is located on the side of the light-emitting surface N that is closer to the center of the circle of the light-emitting surface N and closer to the exit of the first light ray S1 and the second light ray S2. In this case, the brightness gain magnification η specifically satisfies the following formula:

[0203] Example 4, as shown in Figure 28, the intersection B of the first light ray S1 and the plane of the light-emitting surface N is located on the side of the light-emitting surface N away from the exit of the first light ray S1 and the second light ray S2. The intersection C of the second light ray S2 and the plane of the light-emitting surface N is located on the side of the light-emitting surface N close to the exit of the first light ray S1 and the second light ray S2. In this case, the brightness gain magnification η specifically satisfies the following formula:

[0204] Furthermore, referring to FIG. 28 , the thickness of the isolation structure 50 is h, and the distance between the isolation structure 50 and the light-emitting surface N along the normal viewing direction Z is L. The angle between the first light ray S1 and the normal viewing direction Z is 2θ. The aforementioned θ, a, b, c, d, h, and L satisfy the following formulas: tan2θ = a / h. tanθ = d / h. tanθ = b / (h+L). h×tanθ+L×tanθ = c.

[0205] Based on the above formula, the values ​​of h, L, r, and R were set, and combined with the brightness gain factor η, the range of values ​​for d was initially screened. The value of d was then adjusted and multiple simulations were performed. Figure 32 shows the simulation results of the normalized brightness of the light-emitting substrate shown in Figure 26, excluding the lens structure.

[0206] For example, taking r = 10 μm, R = 30 μm, h = 5 μm, and L = 10 μm, multiple simulations were performed with d adjusted within the range of 0 μm to 8 μm. The simulation results are shown in Figure 32. As shown in Figure 32, when 2.5 μm ≤ d ≤ 5 μm, the normalized brightness is relatively high, approximately 125%, and the brightness gain near the normal viewing angle Z is approximately 25%. Furthermore, when d = 3 μm, the normalized brightness is maximum, approximately 190%, and the brightness gain is approximately 90%.

[0207] Based on the above, it can be calculated that when θ is approximately 25° to 45°, the brightness gain of the isolation structure 50 is greater. At this time, the angle of the trapezoid away from the driving backplane 10 can be, for example, 45° to 65°. That is, the angle between the side surface of the isolation structure 50 exposed at the first via 510 and the surface of the isolation structure 50 close to the light-emitting surface N of the light-emitting device 20 is 45° to 65°. Exemplarily, the angle of the trapezoid away from the driving backplane 10 is any one of 45°, 50°, 55°, 60° and 65°, so that the brightness gain effect of the isolation structure 50 is better.

[0208] After the structure of the isolation structure 50 is determined, the lens structure 30 may be simulated to achieve a better brightness gain effect of the lens structure 30 .

[0209] The simulation can be performed by setting the thickness of the lens structure 30 and adjusting the radius of curvature of the second surface 30B of the lens structure 30. FIG33 is a simulation result diagram of the brightness gain magnification of the light emitting substrate shown in FIG26.

[0210] For example, taking a lens structure 30 with a thickness of 12 μm as an example, multiple simulations were conducted by adjusting the radius of curvature of the second surface 30B of the lens structure 30. The simulation results are shown in Figure 33. As shown in Figure 33, when the radius of curvature of the second surface 30B of the lens structure 30 is approximately 12 μm to 17 μm, the normalized brightness is relatively high, approximately 210%, and the brightness gain near the normal viewing angle direction Z is approximately 110%. Furthermore, when the radius of curvature of the second surface 30B of the lens structure 30 is approximately 14 μm or 15 μm, the normalized brightness is maximum, approximately 225%, and the brightness gain is approximately 125%.

[0211] It should be noted that, in the above simulation process, the refractive index of the material of the spacer portion 40 is 1.5, the refractive index of the material of the encapsulation layer 120 is 1.42, and the refractive index of the material of the lens structure 30 is 1.56.

[0212] In some embodiments, as shown in FIG34 , the isolation structure 50 may include a support pad 51 and a first reflective layer 52. The support pad 51 is disposed on a side of the light-emitting device 20 away from the driving backplane 10, and the first reflective layer 52 covers the surface of the support pad 51. In this case, the first reflective layer 52 may be made of a metal material with a high reflectivity (a reflectivity greater than or equal to 90%) or white oil. The material selection of the support pad 51 may be more extensive, thereby reducing the process difficulty and preparation cost.

[0213] It should be noted that the thickness of the first reflective layer 52 is greater than or equal to 100 nm, so that the first reflective layer 52 has a high reflectivity. Exemplarily, the thickness of the first reflective layer 52 is 100 nm, 120 nm, 150 nm, 180 nm, 200 nm, 250 nm, or higher, which is not specifically limited in the embodiments of the present disclosure.

[0214] 34 , the support pad 51 can be made of the same material and disposed in the same layer as the lens structure 30 of the light-emitting device 20. That is, the support pad 51 can be formed in the same process step as the lens structure 30, which can simplify the process flow and reduce process difficulty and manufacturing cost.

[0215] In some embodiments, as shown in FIG26 , the lens structure 30 includes a first lens portion 31 and a second lens portion 32 , wherein the second lens portion 32 is disposed on a side of the first lens portion 31 away from the driving back plate, and the first lens portion 31 is cylindrical and the second lens portion 32 is a spherical segment.

[0216] In this way, the total reflection of light in the edge area of ​​the lens structure 30 that has no convergence effect on light can be reduced, so that more light can be transmitted from the edge area of ​​the lens structure 30 to the isolation structure 50, thereby increasing the light reflected by the isolation structure 50, further improving the total luminous flux near the positive viewing angle direction Z, increasing the light that can be received and utilized by the human eye, improving the efficiency of light that can be effectively utilized by the light-emitting device 20, and reducing the power consumption of the display device 1000 (see Figure 1).

[0217] Exemplarily, as shown in Figure 26, the first light S1 intersects with the first lens portion 31, so that the light directed toward the isolation structure 50 and the light emitted from the positive viewing direction after being reflected by the isolation structure 50 can be directed toward the outer surface of the first lens portion 31, thereby reducing the total reflection of this part of the light in the edge area of ​​the lens structure 30 where there is no convergence effect on the light, so that more light can be transmitted from the edge area of ​​the lens structure 30 to the isolation structure 50, further increasing the light reflected by the isolation structure 50, improving the total luminous flux near the positive viewing direction Z, increasing the light that can be received and utilized by the human eye, and improving the efficiency of the light that can be effectively utilized by the light-emitting device 20, thereby reducing the power consumption of the display device 1000 (see Figure 1).

[0218] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that a person skilled in the art can conceive within the technical scope disclosed in the present disclosure should be included within the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A light-emitting device, comprising: A first electrode configured to be connected to a pad of a driving backplane; a light-emitting stacked layer, disposed on one side of the first electrode and connected to the first electrode; At least one lens structure is arranged opposite to the light-emitting stack layer and is located on a side of the light-emitting stack layer away from the first electrode; the lens structure is configured to converge the light emitted from the light-emitting stack layer toward the lens structure toward the middle area of the lens structure.

2. The light emitting device according to claim 1, wherein The lens structure includes a first surface and a second surface arranged opposite to the light-emitting stack layer, the first surface is a plane, the second surface is a curved surface, and the second surface is located on a side of the first surface away from the light-emitting stack layer.

3. The light emitting device according to claim 2, wherein Along the main axis of the lens structure, a ratio of the thickness of the lens structure to the radius of the first surface of the lens structure is 0.3-1.

4. The light emitting device according to any one of claims 1 to 3, further comprising: The second electrode is arranged on a side of the light emitting stack layer away from the first electrode, and the lens structure is located between the second electrode and the light emitting stack layer. The light emitting device according to claim 4 , wherein: The material of the lens structure includes gallium nitride.

6. The light-emitting device according to claim 4 or 5 comprises a lens structure, wherein the orthographic projection of the lens structure on the reference plane is located within the range of the orthographic projection of the light-emitting stack layer on the reference plane; and the distance between the boundary of the orthographic projection of the lens structure on the reference plane and the boundary of the orthographic projection of the light-emitting stack layer on the reference plane is greater than or equal to 0.5 μm; the reference plane is the plane where the surface of the first electrode close to the light-emitting stack layer is located.

7. The light-emitting device according to any one of claims 1 to 5 comprises a plurality of lens structures arranged at intervals, and the orthographic projections of the plurality of lens structures on a reference plane are symmetrical about the geometric center of the orthographic projection of the light-emitting stack layer on the reference plane; the reference plane is the plane where the surface of the first electrode close to the light-emitting stack layer is located. The light emitting device according to claim 7 , wherein: A minimum distance between boundaries of the plurality of lens structures is 0 μm to 0.5 μm.

9. The light emitting device according to claim 7 or 8, wherein: A minimum distance between an orthographic projection of boundaries of the plurality of lens structures on the reference plane and an orthographic projection of a boundary of the light-emitting stacked layer on the reference plane is 0 μm to 0.5 μm.

10. The light emitting device according to any one of claims 1 to 9, further comprising: The second electrode is disposed on a side of the light emitting stack layer away from the first electrode, and the lens structure is located on a side of the second electrode away from the light emitting stack layer. The light emitting device according to claim 10 , wherein: The material of the lens structure includes transparent silicone and / or transparent resin.

12. The light emitting device according to claim 10 or 11, further comprising: The spacer portion is arranged between the lens structure and the second electrode.

13. The light emitting device according to claim 12, wherein: The refractive index of the material of the lens structure is greater than the refractive index of the material of the spacer portion.

14. The light emitting device according to claim 12 or 13, wherein: The radial length of the orthographic projection of the light-emitting device on the reference plane is 5 μm to 50 μm; the reference plane is the plane where the surface of the first electrode close to the light-emitting stacked layer is located.

15. The light emitting device according to any one of claims 1 to 11, wherein The radial length of the orthographic projection of the light-emitting device on the reference plane is 4 μm to 10 μm; the reference plane is the plane where the surface of the first electrode close to the light-emitting stacked layer is located.

16. The light emitting device according to any one of claims 1 to 15, wherein: The boundaries of the two surfaces of the light-emitting stacked layer and the first electrode facing away from each other are connected to form a slope surface, and the angle between the slope surface and the surface of the light-emitting stacked layer away from the first electrode is 50° to 60°.

17. The light emitting device according to any one of claims 1 to 16, wherein: The refractive index of the material of the lens structure is 1.5 to 2.

5.

18. A light-emitting substrate, comprising: The light-emitting device according to any one of claims 1 to 17; The driving backplane includes a solder pad; the solder pad is connected to the first electrode of the light emitting device.

19. The light-emitting substrate according to claim 18, further comprising: An isolation structure, provided on a side of the light emitting device away from the driving backplane; The isolation structure is provided with a plurality of first via holes, and one of the light emitting devices is exposed by one of the first via holes.

20. The light-emitting substrate according to claim 19, wherein The light emitting device includes a second electrode, which is arranged on a side of the light emitting stack layer of the light emitting device away from the first electrode, and the isolation structure is electrically connected to the second electrode.

21. The light-emitting substrate according to claim 19 or 20, further comprising: A color conversion layer includes a plurality of quantum dot films, wherein one of the quantum dot films is disposed in one of the first via holes; the plurality of quantum dot films include a first quantum dot film, a second quantum dot film, and a third quantum dot film; The first quantum dot film is configured to emit light of a first color under the irradiation of light emitted by the light-emitting device; the second quantum dot film is configured to emit light of a second color under the irradiation of light emitted by the light-emitting device; the third quantum dot film is configured to transmit the light emitted by the light-emitting device, and the color of the light emitted by the light-emitting device is a third color. The first color, the second color and the third color are three primary colors.

22. The light-emitting substrate according to claim 21, further comprising: A transflective module covering the first quantum dot film and the second quantum dot film, wherein the transflective module is configured to reflect The light of the third color transmits the light of the first color and the light of the second color.

23. The light-emitting substrate according to claim 19 or 20, further comprising: The encapsulation layer is arranged on a side of the light emitting device away from the driving backplane; and the encapsulation layer covers the light emitting device and the isolation structure.

24. The light-emitting substrate according to claim 23, wherein The refractive index of the material of the lens structure of the light-emitting device is greater than the refractive index of the material of the encapsulation layer.

25. The light emitting substrate according to any one of claims 19 to 24, wherein Along a direction perpendicular to the driving backplane and pointing from the driving backplane to the light-emitting device, the first via hole increases in size sequentially in multiple cross sections parallel to the plane where the driving backplane is located.

26. The light-emitting substrate according to claim 25, wherein The cross-section of the first via hole perpendicular to the plane where the driving backplane is located is trapezoidal; and the angle between the side surface of the isolation structure exposed at the first via hole and the surface of the isolation structure close to the light-emitting surface of the light-emitting device is 45° to 65°.

27. The light-emitting substrate according to claim 25 or 26, wherein The isolation structure includes: A support pad is provided on a side of the light emitting device away from the driving back plate; The first reflective layer covers the surface of the support pad.

28. The light-emitting substrate according to claim 27, wherein The support pad is made of the same material as the lens structure of the light emitting device and is provided on the same layer.

29. The light emitting substrate according to any one of claims 26 to 28, wherein The light reflected at one end of the side of the isolation structure exposed by the first via hole, away from the light-emitting surface of the light-emitting device, and emitted along the normal viewing angle direction is the first light; the light reflected at one end of the side of the isolation structure exposed by the first via hole, close to the light-emitting surface of the light-emitting device, and emitted along the normal viewing angle direction is the second light; the normal viewing angle direction is perpendicular to the surface of the light-emitting side of the light-emitting substrate; The end of the portion of the light emitting surface between the first light and the second light close to the first light is a first end, and the end of the portion of the light emitting surface between the first light and the second light close to the second light is a second end; The area of the light-emitting surface is M1; the portion between the projection of the first end along the first light onto the plane where the surface of the isolation structure close to the light-emitting surface is located and the projection of the second end along the second light onto the plane where the surface of the isolation structure close to the light-emitting surface is located is a brightness gain region, and the area of the brightness gain region is M2; The brightness gain ratio is η; The M1, the M2 and the η satisfy the following formula: η=M1 / M2.

30. The light emitting substrate according to any one of claims 25 to 29, wherein The lens structure of the light emitting device includes a first lens portion and a second lens portion, wherein the second lens portion is arranged on a side of the first lens portion away from the driving back plate, and the first lens portion is a cylinder, and the second lens portion is a spherical segment.

31. The light-emitting substrate according to any one of claims 18 to 30, comprising a plurality of light-emitting devices, wherein the light-emitting devices include spacers, and the spacers of the plurality of light-emitting devices are connected to form a continuous whole-layer structure.

32. The light-emitting substrate according to any one of claims 18 to 31, comprising a plurality of light-emitting devices, wherein the light-emitting devices comprise second electrodes, and the second electrodes of the plurality of light-emitting devices are connected to form a continuous whole-layer structure.

33. A display device comprising: The light-emitting substrate according to any one of claims 18 to 32; A housing is provided in which the light emitting substrate is arranged.

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