Display device
By adopting a combined design of the first and second light-emitting devices and the color conversion layer in the display device, the high cost and color shift problems of red LEDs are solved, and simplified production and low-cost manufacturing of the full-color display device are achieved.
Patent Information
- Application Number
- CN202410384584.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-29
- Publication Date
- 2025-10-03
AI Technical Summary
In the production and manufacturing of existing display devices, red LEDs and blue-green LEDs are costly, involve complex processes, and suffer from color shift issues, making it difficult to achieve full color.
The structure design includes first and second light emitting devices and a color conversion layer. The first light emitting device emits light of the first and second colors, and the color conversion layer converts the second color light into the third color, which simplifies the process and reduces costs.
The invention realizes the production of full-color display devices, reduces the number of light-emitting devices and color conversion layers, simplifies the process flow, reduces production costs and reduces the risk of color deviation.
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Figure CN120751852A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the field of display technology, and in particular to a display device. Background Art
[0002] Existing display devices are manufactured in the following ways:
[0003] 1. Red, green, and blue LEDs are manufactured separately before transfer printing. This method increases the cost of producing all three LEDs simultaneously, as red and blue-green LEDs use different substrates, processes, and raw materials. Red LEDs also have a more pronounced size effect, resulting in lower production efficiency for smaller sizes. Furthermore, the efficiency of red LEDs decreases with increasing temperature, which is different from that of blue-green LEDs, making color shift more likely.
[0004] 2. A porous area is made on the substrate, and different degrees of strain relaxation are generated in the LED structure grown in this area to achieve wavelength redshift, but the degree of redshift is limited. If RGB three-color LEDs are to be made, a multi-layer porous structure needs to be made, which has a complex process and is difficult to produce.
[0005] 3. A monolithic LED can emit three primary colors of light from a device with a selected current density. As the injected current increases, the wavelength decreases from 650nm to 460nm or lower. However, this method is complex to produce three colors and has a large voltage across the board. It can produce red, red and green, green, green and blue, and blue, but cannot produce red and blue, which has limitations.
[0006] 4. The method of combining blue LED with quantum dots makes it difficult to pattern quantum dots. The material cost of the photolithography etching method is high. In addition, after making one quantum dot pattern, the process of making another quantum dot may cause certain damage to the previous quantum dot, affecting the quality of the finished product.
[0007] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present disclosure, and therefore may include information that does not constitute prior art known to ordinary technicians in the field. Summary of the Invention
[0008] The purpose of the present disclosure is to overcome the above-mentioned deficiencies of the prior art, provide a display device, simplify the production process, and save production costs.
[0009] To achieve the above-mentioned purpose, the present invention adopts the following technical solutions:
[0010] According to one aspect of the present disclosure, a display device is provided, comprising:
[0011] Driver backplane;
[0012] a light-emitting layer, disposed on one side of the driving backplane, and comprising a plurality of light-emitting units, wherein each of the light-emitting units comprises a light-emitting device, wherein the light-emitting device comprises a first light-emitting device and a second light-emitting device, wherein the first light-emitting device is configured to emit light of a first color and / or a second color, and the second light-emitting device is configured to emit light of the first color;
[0013] The color conversion layer is arranged on a side of the light emitting device away from the driving backplane and overlaps with the second light emitting device, and is used for converting the light of the first color into light of a third color.
[0014] In an exemplary embodiment of the present disclosure, the first light-emitting device is configured to emit light of the first color, and the light-emitting device further includes a third light-emitting device, and the third light-emitting device is configured to emit light of the second color.
[0015] In an exemplary embodiment of the present disclosure, the display device further includes:
[0016] a first planar layer, covering the light-emitting device;
[0017] The defining layer is provided on a side of the first flat layer away from the driving backplane and has a light-transmitting hole overlapping with the second light-emitting device, and the color conversion layer is located in the light-transmitting hole.
[0018] In an exemplary embodiment of the present disclosure, the display device further includes:
[0019] The filter portion is provided on a side of the light emitting device away from the driving backplane and overlaps with the second light emitting device. The color of the filter portion is the third color.
[0020] In an exemplary embodiment of the present disclosure, the light-emitting device includes a first electrode, a second electrode, and a first semiconductor layer, a light-emitting functional layer, a second semiconductor layer, and a third semiconductor layer stacked in a direction away from the driving backplane, wherein the first electrode is electrically connected to the first semiconductor layer and the driving backplane, and the second electrode is electrically connected to the second semiconductor layer and the driving backplane;
[0021] The third semiconductor layer of the third light emitting device has a porous structure.
[0022] In an exemplary embodiment of the present disclosure, the third semiconductor layer corresponding to the first light emitting device, the second light emitting device and the third light emitting device is a continuous film layer structure.
[0023] In an exemplary embodiment of the present disclosure, the display device further includes:
[0024] a substrate, disposed on a side of the third semiconductor layer away from the driving backplane;
[0025] The defining layer is arranged on a side of the substrate away from the driving backplane, the defining layer has a light-transmitting hole overlapping with the second light-emitting device unit, and the color conversion layer is located in the light-transmitting hole.
[0026] In an exemplary embodiment of the present disclosure, the light-emitting devices each include a first light-emitting functional layer and a second light-emitting functional layer stacked in a direction close to the driving backplane, and the first light-emitting functional layer and the second light-emitting functional layer are used to emit light of a first color and light of a second color, respectively.
[0027] In an exemplary embodiment of the present disclosure, the light-emitting device further includes a first electrode, a first semiconductor layer, and a second semiconductor layer. The first semiconductor layer is arranged between the driving backplane and the first light-emitting functional layer and is electrically connected to the driving backplane. The second semiconductor layer is arranged on a side of the second light-emitting functional layer away from the driving backplane. The first electrode is arranged between the second semiconductor layer and the color conversion layer and is electrically connected to the driving backplane through a lead located on the periphery of the light-emitting device.
[0028] In an exemplary embodiment of the present disclosure, the light-emitting device further includes a first electrode, a second electrode, a first semiconductor layer, and a second semiconductor layer. The first semiconductor layer is arranged between the driving backplane and the first light-emitting functional layer, and the second semiconductor layer is arranged between the second light-emitting functional layer and the color conversion layer. The first electrode is electrically connected to the first semiconductor layer and the driving backplane, one end of the second electrode passes through the first light-emitting functional layer and the second light-emitting functional layer and is electrically connected to the second semiconductor layer, and the other end is electrically connected to the driving backplane.
[0029] In an exemplary embodiment of the present disclosure, the display device further includes a defining layer, which is arranged on a side of the first electrode away from the driving backplane, the defining layer having a light-transmitting hole arranged to overlap with the second light-emitting device, and the color conversion layer is located in the light-transmitting hole.
[0030] In an exemplary embodiment of the present disclosure, the display device further includes a substrate and a defining layer, the substrate being arranged on a side of the second semiconductor layer away from the driving backplane, the defining layer being arranged on a side of the substrate away from the driving backplane, the defining layer having a light-transmitting hole arranged to overlap with the second light-emitting device, and the color conversion layer being located in the light-transmitting hole.
[0031] In an exemplary embodiment of the present disclosure, the light-emitting device further includes a first electron blocking layer and a second electron blocking layer, the first electron blocking layer being arranged between the first semiconductor layer and the second light-emitting functional layer, and the second electron blocking layer being arranged between the first light-emitting functional layer and the second light-emitting functional layer.
[0032] In an exemplary embodiment of the present disclosure, the light-emitting device includes a first light-emitting functional layer and a second light-emitting functional layer stacked in a direction close to the driving backplane, wherein the first light-emitting functional layer and the second light-emitting functional layer are respectively configured to emit light of a first color and light of a second color;
[0033] The color conversion layer includes a conversion semiconductor layer and a color conversion material. The conversion semiconductor layer is arranged on a side of the second light-emitting device away from the driving backplane. A porous structure is provided in the conversion semiconductor layer, and the color conversion material is filled in the porous structure.
[0034] In an exemplary embodiment of the present disclosure, the light-emitting device further includes a first electrode, a second electrode, a first semiconductor layer, and a second semiconductor layer. The first semiconductor layer is arranged between the driving backplane and the second light-emitting functional layer, and the second semiconductor layer is arranged between the first light-emitting functional layer and the color conversion layer. The first electrode is electrically connected to the first semiconductor layer and the driving backplane, one end of the second electrode passes through the first light-emitting functional layer and the second light-emitting functional layer and is electrically connected to the second semiconductor layer, and the other end is electrically connected to the driving backplane.
[0035] The first light emitting device further includes a third semiconductor layer, which is arranged on a side of the second semiconductor layer away from the driving backplane, and the color conversion layer and the third semiconductor layer of the first light emitting device are arranged on the same layer.
[0036] In an exemplary embodiment of the present disclosure, the light-emitting device further includes a first electron blocking layer and a second electron blocking layer, the first electron blocking layer being arranged between the first semiconductor layer and the second light-emitting functional layer, and the second electron blocking layer being arranged between the first light-emitting functional layer and the second light-emitting functional layer.
[0037] In an exemplary embodiment of the present disclosure, the first light-emitting device and the second light-emitting device are arranged on the same layer, the third light-emitting device is arranged on a side of the first light-emitting device away from the driving backplane, and the color conversion layer and the third light-emitting device are arranged on the same layer;
[0038] Alternatively, the first light-emitting device and the second light-emitting device are arranged on the same layer, the third light-emitting device is arranged on a side of the first light-emitting device close to the driving backplane, and the color conversion layer is arranged on a side of the second light-emitting device away from the third light-emitting device.
[0039] In an exemplary embodiment of the present disclosure, the light-emitting device further includes a first electrode and a second electrode, the first electrode being arranged on a side of the first light-emitting device away from the driving backplane, the second electrode being arranged on a side of the third light-emitting device away from the driving backplane, the first light-emitting device and the second light-emitting device being electrically connected to the driving backplane through the first electrode, and the third light-emitting device being electrically connected to the driving backplane through the second electrode.
[0040] In an exemplary embodiment of the present disclosure, the display device further includes a first connecting electrode and a second connecting electrode, wherein the first connecting electrode is provided on the same layer as the first light-emitting device and the second light-emitting device, and the first electrode is electrically connected to the driving backplane through the first connecting electrode; the second connecting electrode is provided on the same layer as the third light-emitting device, and the second electrode is electrically connected to the driving backplane through the second connecting electrode;
[0041] The second electrode is a transparent structure.
[0042] In an exemplary embodiment of the present disclosure, the display device further includes a first connecting electrode and a second connecting electrode, the first connecting electrode and the second light-emitting device being provided on the same layer, the first electrode being electrically connected to the driving backplane via the first connecting electrode, the second connecting electrode being provided on a side of the second electrode facing the driving backplane and being provided on the same layer as the third light-emitting device, the second electrode being electrically connected to the driving backplane via the second connecting electrode, and the color conversion layer being provided on a side of the first electrode away from the second light-emitting device;
[0043] The first electrode is a transparent structure.
[0044] The display device provided in this embodiment requires only two light-emitting devices, a first light-emitting device and a second light-emitting device. Compared to conventional light-emitting devices that require three colors, this saves one light-emitting device and simplifies the manufacturing process. Only one color conversion layer is required to achieve color conversion or imaging. Compared to conventional methods that require two color conversion layers, this saves one color conversion layer. The combination of two light-emitting devices and one color conversion layer reduces the number of light-emitting devices and the color conversion layer, reduces the processing complexity, facilitates mass production, and reduces production costs.
[0045] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS
[0046] The accompanying drawings are incorporated into and constitute a part of the specification, illustrate embodiments consistent with the present disclosure, and together with the specification, are used to explain the principles of the present disclosure. Obviously, the drawings described below are only some embodiments of the present disclosure, and those skilled in the art can derive other drawings based on these drawings without inventive effort.
[0047] Figure 1 Schematic diagram of the structure of a display device according to Embodiment 1 of the present invention;
[0048] Figure 1a A schematic diagram of forming a light-emitting device in a display device according to a first embodiment of the present invention;
[0049] Figure 1b A schematic diagram of forming a first planar layer in a display device according to a first embodiment of the present invention;
[0050] Figure 1c A schematic diagram of forming a defining layer for a display device according to a first embodiment of the present invention;
[0051] Figure 1d A schematic diagram of forming a color conversion layer in a display device according to a first embodiment of the present invention;
[0052] Figure 1e Schematic diagram of forming an insulating protective layer and a filter portion of a display device according to a first embodiment of the present invention;
[0053] Figure 1f Schematic diagram of another structure of the display device according to the first embodiment of the present invention;
[0054] Figure 1g A schematic diagram of forming a filter portion in a display device according to a first embodiment of the present invention;
[0055] Figure 1h A schematic diagram of the structure of a defining layer formed in a display device according to a first embodiment of the present invention;
[0056] Figure 1i A schematic structural diagram of a display device forming an insulating protective layer according to a first embodiment of the present invention;
[0057] Figure 1j A schematic structural diagram of a light-emitting device formed in a display device according to a first embodiment of the present invention;
[0058] Figure 1k This is a schematic structural diagram of a bonding layer formed on a display device according to a first embodiment of the present invention;
[0059] Figure 2 Schematic diagram of the structure of a display device according to a second embodiment of the present invention;
[0060] Figure 2a A schematic diagram of forming a third semiconductor layer in a display device according to a second embodiment of the present invention;
[0061] Figure 2b A schematic diagram of a light-emitting device formed in a display device according to a second embodiment of the present invention;
[0062] Figure 2c A schematic diagram of forming a first electrode and a second electrode for a display device according to a second embodiment of the present invention;
[0063] Figure 2d A schematic diagram of forming a defining layer for a display device according to a second embodiment of the present invention;
[0064] Figure 2e A schematic diagram of forming a color conversion layer for a display device according to a second embodiment of the present invention;
[0065] Figure 3 Schematic diagram of the structure of a display device according to a third embodiment of the present invention;
[0066] Figure 3a A schematic diagram of a light-emitting device formed in a display device according to a second embodiment of the present invention;
[0067] Figure 3b Schematic diagram of bonding between a light emitting device and a driving backplane in a display device according to a second embodiment of the present invention;
[0068] Figure 3c A schematic diagram of forming a first electrode for a display device according to a second embodiment of the present invention;
[0069] Figure 3d A schematic diagram of forming a defining layer for a display device according to a second embodiment of the present invention;
[0070] Figure 3e A schematic diagram of forming a color conversion layer for a display device according to a second embodiment of the present invention;
[0071] Figure 3f This is a schematic structural diagram of another form of a display device according to the third embodiment of the present invention;
[0072] Figure 4 Schematic diagram of the structure of a display device according to a fourth embodiment of the present invention;
[0073] Figure 4a A schematic diagram of a light-emitting device formed in a display device according to a fourth embodiment of the present invention;
[0074] Figure 4b Schematic diagram of etching of a display device according to a fourth embodiment of the present invention;
[0075] Figure 4cA schematic diagram of forming an insulating protective layer for a display device according to a fourth embodiment of the present invention;
[0076] Figure 4d A schematic diagram of forming a first electrode and a second electrode for a display device according to a fourth embodiment of the present invention;
[0077] Figure 4e A schematic diagram of forming a porous structure for a display device according to a fourth embodiment of the present invention;
[0078] Figure 4f A schematic diagram of forming a color conversion layer for a display device according to a fourth embodiment of the present invention;
[0079] Figure 5 Schematic diagram of the structure of a display device according to a fifth embodiment of the present invention;
[0080] Figure 5a Schematic diagram of the structure of the first electrode and the second electrode in the display device of the fifth embodiment of the present invention Figure 1 ;
[0081] Figure 5b Schematic diagram of the structure of the first electrode and the second electrode in the display device of the fifth embodiment of the present invention Figure 2 ;
[0082] Figure 5c A schematic diagram of the structure of a driving backplane formed for a display device according to a fifth embodiment of the present invention;
[0083] Figure 5d A schematic diagram showing the structure of a first light-emitting device and a second light-emitting device in a display device according to a fifth embodiment of the present invention;
[0084] Figure 5e A schematic structural diagram of a display device according to a fifth embodiment of the present invention forming a first connecting electrode;
[0085] Figure 5f A schematic structural diagram of a first electrode formed in a display device according to a fifth embodiment of the present invention;
[0086] Figure 5g A schematic structural diagram of a third light-emitting device formed in a display device according to a fifth embodiment of the present invention;
[0087] Figure 5h This is a schematic diagram of the etching structure of the display device according to the fifth embodiment of the present invention;
[0088] Figure 5i A schematic structural diagram of a display device according to a fifth embodiment of the present invention forming a second connecting electrode;
[0089] Figure 5j A schematic diagram of the structure of forming a second electrode for a display device according to a fifth embodiment of the present invention;
[0090] Figure 5k A schematic diagram of the structure of a color conversion layer formed in a display device according to a fifth embodiment of the present invention;
[0091] Figure 5l FIG. 1 is a structural diagram of another form of a display device according to the fifth embodiment of the present invention.
[0092] Reference numerals:
[0093] 1. Driving backplane; 101, P electrode; 102, N electrode;
[0094] 2. Light-emitting devices;
[0095] 21. First light emitting device; 22. Second light emitting device; 23. Third light emitting device;
[0096] 201, first electrode; 202, second electrode; 203, first semiconductor layer; 204, light-emitting functional layer; 2041, first light-emitting functional layer; 2042, second light-emitting functional layer; 205, second semiconductor layer; 206, third semiconductor layer; 207, lead; 208, first electron blocking layer; 209, second electron blocking layer; 210, isolation layer; 211, first connecting electrode; 212, second connecting electrode; 213, porous structure; 214, second through hole; 215, isolation through hole; 216, etched through hole; 217, first through hole;
[0097] 3. Color conversion layer; 4. First flat layer; 5. Definition layer; 51. Light-transmitting hole; 6. Filter part; 7. Insulation protection layer; 8. Substrate; 9. Adhesive layer; 10. Color filter substrate; 11. Second flat layer; 12. Reflective layer. DETAILED DESCRIPTION
[0098] Example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concepts of the example embodiments to those skilled in the art. Like reference numerals in the figures represent identical or similar structures, and thus their detailed descriptions will be omitted. Furthermore, the figures are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale.
[0099] Although relative terms such as "upper" and "lower" are used in this specification to describe the relationship of one illustrated component to another, these terms are used herein for convenience only, such as in accordance with the orientation of the illustrations in the accompanying drawings. It will be understood that if the illustrated device were flipped upside down, the component described as "upper" would become the component "lower." When a structure is referred to as "on" another structure, this may mean that the structure is integrally formed with the other structure, that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via the other structure.
[0100] The terms "a", "an", "the", "said" and "at least one" are used to indicate the presence of one or more elements / components / etc.; the terms "including" and "having" are used to express open-ended inclusion and mean that additional elements / components / etc. may be present in addition to the listed elements / components / etc.; the terms "first", "second" and "third" etc. are used only as labels and are not intended to limit the quantity of their objects.
[0101] Example 1
[0102] The present disclosure provides a display device, such as Figure 1 As shown, the display device includes a driving backplane 1, a light-emitting layer, and a color conversion layer 3. The light-emitting layer is disposed on one side of the driving backplane 1 and includes multiple light-emitting units. Each light-emitting unit includes a light-emitting device 2, which can be an LED. The light-emitting device 2 includes a first light-emitting device 21 and a second light-emitting device 22. The first light-emitting device 21 is configured to emit light of a first color and / or a second color, and the second light-emitting device 22 is configured to emit light of the first color. The color conversion layer 3 is disposed on the side of the light-emitting device 2 away from the driving backplane 1 and overlaps with the second light-emitting device 22. It is configured to convert light of the first color into light of a third color.
[0103] For example, if the first color is blue, the second color is green, and the third color is red, the first light-emitting device 21 can emit blue and / or green light, the second light-emitting device 22 can emit blue light, and the color conversion layer 3 is a red color conversion layer 3, which can convert blue light into red light. If the first light-emitting device 21 can emit blue and green light, the blue light emitted by the second light-emitting device 22 is converted into red light by the red color conversion layer 3, thus achieving full color.
[0104] For example, if the first color is green, the second color is blue, and the third color is red, the first light-emitting device 21 can emit blue and / or green light, the second light-emitting device 22 can emit green light, and the color conversion layer 3 is a red color conversion layer 3, which can convert green light into red light. If the first light-emitting device 21 can emit blue and green light, the green light emitted by the second light-emitting device 22 is converted into red light by the red color conversion layer 3, thus achieving full color.
[0105] It is understood that the first color can be selected from blue or green, and the second color can be selected from blue or green. Since red light has a longer wavelength but lower energy, and the energy of red, green, and blue light increases in sequence, the higher-energy blue or green light is more likely to be excited, thereby achieving color conversion. This embodiment does not limit the first color and the second color, and can be adjusted according to actual production conditions, as long as the first and second colors correspond to different colors. For ease of description, this embodiment uses blue light as the first color and green light as the second color as an example.
[0106] Color conversion layer 3 may specifically comprise a quantum dot structure. This structure can alter the color of light emitted by LED pixels, converting blue light into red light, or converting green light into green light. Specifically, the quantum dot structure is doped with quantum dot (QD) particles that emit red light when excited by blue light. This means that blue light is converted to red light after passing through the red quantum dot structure.
[0107] Specifically, quantum dots are typically nanoparticles composed of elements from Group II-VI or Group III-V that emit fluorescence upon stimulation. The luminescence spectrum of variable quantum dots can be controlled by varying their size. There are many types of quantum dots, including representative Group II-VI elements such as CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, and ZnTe, and Group III-V elements such as GaAs, GaP, GaAs, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, and AlSb. Methods for preparing variable quantum dots include molecular beam epitaxy, metal-organic chemical vapor deposition, self-organized growth, and colloidal chemistry. Quantum dots of varying sizes can be produced using different chemical conditions.
[0108] The display device provided in this embodiment requires only two light-emitting devices 2, a first light-emitting device 21 and a second light-emitting device 22. Compared to conventional light-emitting devices 2 that require three colors, this eliminates the need for one light-emitting device 2, simplifying the manufacturing process. Furthermore, only one color conversion layer 3 is required for color conversion or imaging. Compared to conventional methods that require two color conversion layers, this eliminates the need for one color conversion layer 3. The combination of two light-emitting devices 2 and one color conversion layer 3 reduces the number of light-emitting devices 2 and color conversion layer 3 and the difficulty of manufacturing them, facilitating mass production and reducing production costs.
[0109] In one embodiment, Figure 1 and Figure 1a As shown, the first light emitting device 21 is used to emit light of a first color, and the light emitting device 2 further includes a third light emitting device 23, and the third light emitting device 23 is used to emit light of a second color.
[0110] In this manner, both the first and second light-emitting devices 21 and 22 emit blue light, i.e., two blue LEDs. The third light-emitting device 23 emits green light, i.e., a green LED. The blue light emitted by the second light-emitting device 22 is converted by the color conversion layer 3 to red light. The two blue and green LEDs and the color conversion layer 3 together achieve a full-color display device. Only the blue and green LEDs and the color conversion layer 3 need to be manufactured, resulting in a simple manufacturing process, easy mass production, and low cost. Furthermore, because the color conversion layer 3 converts the blue light emitted by the second light-emitting device 22 into red light, there is no need to manufacture a red LED. This avoids the more pronounced size effect of red LEDs, which results in lower efficiency at small sizes. Furthermore, because the efficiency of red LEDs decreases with increasing temperature differently from that of blue and green LEDs, the use of the color conversion layer 3 can reduce risks such as color shift.
[0111] During actual production, the first light-emitting device 21, the second light-emitting device 22, and the third light-emitting device 23 can be transferred to a substrate, that is, the LEDs on the intermediate carrier are transferred to a substrate or other carrier using appropriate pressure or a mask. The substrate material can include one of sapphire, silicon carbide, and silicon.
[0112] like Figure 1 and Figure 1b As shown, the display device further includes a first flat layer 4, which covers the light-emitting device 2. After the light-emitting device 2 is placed on the driver backplane 1, the surface of the driver backplane 1 facing the light-emitting device 2 has a concave-convex structure. After the light-emitting device 2 is covered with the first flat layer 4, the concave-convex structure is filled. Since the surface of the first flat layer 4 away from the driver backplane 1 is a flat structure, it facilitates the stacking of subsequent film layers.
[0113] like Figure 1 and Figure 1cAs shown, the display device further includes a defining layer 5 , which is disposed on a side of the first flat layer 4 away from the driving backplane 1 and has a light-transmitting hole 51 overlapping with the second light-emitting device 22 , and the color conversion layer 3 is located in the light-transmitting hole 51 .
[0114] Specifically, the confining layer 5, which can also be referred to as a quantum dot barrier, can be made of an organic adhesive material, specifically a material with an opposite hydrophobicity to the quantum dot solution or quantum dot color film, or the organic adhesive material can be surface-treated. Because hydrophobic molecules tend to be non-polar, they dissolve in neutral and non-polar solutions, such as organic solvents. However, hydrophobic molecules typically clump together in water, and water on the surface of a hydrophobic material forms a large contact angle, resembling a droplet. Therefore, after the quantum dot solution or quantum dot color film is filled into the light-transmitting holes 51 of the confining layer 5, it forms a contact angle greater than 150° with the confining layer 5.
[0115] By opening a light-transmitting hole 51 in the limiting layer 5 and overlapping the light-transmitting hole 51 with the second light-emitting device 22 , the color conversion layer 3 will not block the second light-emitting device 22 after being placed in the light-transmitting hole 51 , thereby ensuring the effectiveness of the second light-emitting device 22 in emitting blue light.
[0116] By utilizing the through hole structure of the light-transmitting hole 51, the portion of the first planar layer 4 corresponding to the light-transmitting hole 51 can be exposed. Figure 1d As shown, a red quantum dot solution or a quantum dot color film is spin-coated into the light-transmitting hole 51. The quantum dot solution or the quantum dot color film only remains on the surface of the first flat layer 4 to form red quantum dots. Of course, red quantum dots can also be produced by directly patterning the quantum dot color film.
[0117] like Figure 1 and Figure 1e As shown, the display device further includes an insulating protective layer 7, which is disposed on the side of the limiting layer 5 away from the driving backplane 1 and overlaps with the color conversion layer 3. Since red quantum dots are easily corroded by water and oxygen, the insulating protective layer 7 can be used to isolate the color conversion layer 3 from water and oxygen, thereby improving the light conversion effect of the color conversion layer 3.
[0118] like Figure 1 and Figure 1e As shown, the display device further includes a filter portion 6, which is provided on a side of the light emitting device 2 away from the driving backplane 1 and overlaps with the second light emitting device 22, and the color of the filter portion 6 is the third color.
[0119] Specifically, the filter 6 can be referred to as a red color filter. It can be positioned on the side of the insulating protective layer 7 away from the light-emitting devices 2. The filter 6, color conversion layer 3, and second light-emitting devices 22 are arranged in an overlapping manner. The filter 6 filters the unconverted blue light from the color conversion layer 3, improving the purity and reliability of the emitted red light. After the filter 6 is manufactured, the driver backplane 1 can be electrically connected to each light-emitting device 2.
[0120] In another embodiment, Figure 1f As shown, the display device includes a second flat layer 11, which is disposed on the side of the defining layer 5 away from the driver backplane 1. The second flat layer 11 overlaps the color conversion layer 3. After the defining layer 5 is covered with the second flat layer 11, the surface of the defining layer 5 away from the driver backplane 1 is flattened. The second flat layer 11 is made of an insulating material, and the insulating protective layer 7 protects the color conversion layer 3 from water and oxygen, thereby improving the light conversion effect of the color conversion layer 3. The second flat layer 11 is provided with an opening, and the filter portion 6 is disposed within the opening. In this manner, the filter portion 6 is not protruding but is embedded in the second flat layer 11, further improving the surface appearance quality.
[0121] Of course, the insulating protection layer 7 can be disposed on the side of the color conversion layer 3 facing the driving backplane 1 , or can be disposed on the side away from the driving backplane 1 .
[0122] In actual production, the display devices may not be stacked in sequence, but may be a split stacking structure. Figure 1g As shown, the filter portion 6 is formed on the color filter substrate 10, and then Figure 1h As shown, the second flat layer 11 covers the filter portion 6 and the color filter substrate 10, and a limiting layer 5 is formed on the side of the second flat layer 11 away from the driving backplane 1, and the light-transmitting holes 51 of the limiting layer 5 and the filter portion 6 are overlapped. Figure 1i As shown, a material with opposite hydrophobicity to the quantum dot solution or quantum dot color film is filled into the light-transmitting hole 51 and retained on the surface of the second flat layer 11; at the same time, an insulating protective layer 7 is formed on the side of the limiting layer 5 away from the driving backplane 1 to prevent water and oxygen from corroding the color conversion layer 3. At the same time, as Figures 1j-1k As shown, the first light-emitting device 21, the second light-emitting device 22 and the third light-emitting device 23 are transferred to the driving backplane 1, and the side of the insulating protective layer 7 away from the limiting layer 5 is facing each light-emitting device 2, and the adhesive layer 9 is filled between the driving backplane 1 and the insulating protective layer 7 to improve the fixing effect between each light-emitting device 2, the driving backplane 1 and the insulating protective layer 7, and finally the color filter substrate 10 is removed.
[0123] Example 2
[0124] This embodiment is similar to the first embodiment, and the only difference lies in the detailed structure of the light emitting device 2 .
[0125] like Figure 2 As shown, the light-emitting device 2 provided in this embodiment includes a first electrode 201, a second electrode 202, and a first semiconductor layer 203, a light-emitting functional layer 204, a second semiconductor layer 205 and a third semiconductor layer 206 stacked away from the driving backplane 1. The first electrode 201 is electrically connected to the first semiconductor layer 203 and the driving backplane 1, and the second electrode 202 is electrically connected to the second semiconductor layer 205 and the driving backplane 1.
[0126] Specifically, the first semiconductor layer 203 may be P-GaN, the second semiconductor layer 205 may be N-GaN, and the light-emitting functional layer 204 may be an MQW quantum well layer, preferably an InGaN quantum well (QW).
[0127] The third semiconductor layer 206 is GaN, and the third semiconductor layer 206 of the third light-emitting device 23 has a porous structure 213. The third semiconductor layers 206 of the first and second light-emitting devices 21, 22 have a dense structure, while the third semiconductor layer 206 of the third light-emitting device 23 has a loose porous structure 213. Therefore, within the region corresponding to the third semiconductor layer 206, the third light-emitting device 23 experiences different degrees of strain relaxation than the first and second light-emitting devices 21, 22. This results in different Indium content in the corresponding light-emitting functional layers 204, resulting in a red-shifted emission wavelength, causing the first and second light-emitting devices 21, 22 to emit blue light, while the third light-emitting device 23 emits green light. Furthermore, by overlapping the color conversion layer 3 and the second light-emitting device 22, a full-color display device is achieved.
[0128] In one embodiment, Figure 2 As shown, the third semiconductor layer 206 corresponding to the first light-emitting device 21, the second light-emitting device 22, and the third light-emitting device 23 is a continuous film layer structure. In this way, the three light-emitting devices 2 differ only in the third semiconductor layer 206, emitting light of different colors, but this does not affect the differences in the other film stacks, and the flatness and uniformity are improved.
[0129] In one embodiment, Figure 2 and Figure 2a As shown, the display device further includes a substrate 8 , which is disposed on a side of the third semiconductor layer 206 away from the driving backplane 1 . The substrate 8 plays a supporting and bearing role when the third semiconductor layer 206 is manufactured.
[0130] Specifically, a third semiconductor layer 206 is formed by epitaxial growth on the substrate 8, the photoresist covers the third semiconductor layer 206 of the first light-emitting device 21 and the second light-emitting device 22, and the third semiconductor layer 206 of the third light-emitting device 23 is in an exposed state, and then immersed in an oxalic acid solution with a concentration of approximately 10% to 80%, so that the third semiconductor layer 206 of the third light-emitting device 23 forms a porous structure 213.
[0131] like Figure 2 and Figure 2b As shown, the second semiconductor layer 205, the light-emitting functional layer 204, the first semiconductor layer 203, and the reflective layer 12 are epitaxially grown in sequence in the direction of the third semiconductor layer 206 away from the substrate 8. Due to different degrees of strain relaxation of the third semiconductor layer 206 during the growth process, the In content in the light-emitting functional layer 204 of the light-emitting device 2 is different.
[0132] like Figure 2 and Figure 2c As shown, a first via hole and a second via hole are formed in the light-emitting device 2 through an etching process. The first via hole penetrates the reflective layer 12, exposing the first semiconductor layer 203. The second via hole penetrates the reflective layer 12, the first semiconductor layer 203, and the light-emitting functional layer 204, exposing the second semiconductor layer 205. Subsequently, the first electrode 201 is electrically connected to the first semiconductor layer 203 through the first via hole, and the second electrode 202 is electrically connected to the second semiconductor layer 205 through the second via hole. The first electrode 201 and the second electrode 202 are then fabricated using a flip-chip method.
[0133] like Figure 2 and Figure 2d As shown, the display device further includes a defining layer 5 , which is disposed on a side of the substrate 8 away from the driving backplane 1 and has a light-transmitting hole 51 overlapping with the second light-emitting device 22 , and the color conversion layer 3 is located in the light-transmitting hole 51 .
[0134] Specifically, after the first electrode 201 and the second electrode 202 are inverted, the substrate 8 is arranged on the side of the light-emitting device 2 away from the driving backplane 1. The surface of the substrate 8 on the side away from the driving backplane 1 can be thinned and then a limiting layer 5 can be formed to reduce the overall thickness of the entire display device to meet the requirements of lightweight and small size.
[0135] The confining layer 5, also known as a quantum dot barrier, can be made of an organic adhesive material, specifically a material with opposite hydrophobicity to the quantum dot solution or quantum dot color film, or the organic adhesive material can be surface-treated. Because hydrophobic molecules tend to be non-polar, they dissolve in neutral and non-polar solutions, such as organic solvents. However, hydrophobic molecules typically clump together in water, and water on the surface of a hydrophobic material forms a large contact angle, forming a droplet-like shape. Therefore, when the quantum dot solution or quantum dot color film is filled into the light-transmitting holes 51 of the confining layer 5, it forms a contact angle greater than 150° with the confining layer 5.
[0136] By opening a light-transmitting hole 51 in the limiting layer 5 and overlapping the light-transmitting hole 51 with the second light-emitting device 22 , the color conversion layer 3 will not block the second light-emitting device 22 after being placed in the light-transmitting hole 51 , thereby ensuring the effectiveness of the second light-emitting device 22 in emitting blue light.
[0137] By utilizing the through-hole structure of the light-transmitting hole 51, the portion of the substrate 8 corresponding to the light-transmitting hole 51 can be exposed. Figure 2 and Figure 2e As shown, a red quantum dot solution or a quantum dot color film is spin-coated into the light-transmitting hole 51. The quantum dot solution or the quantum dot color film remains only on the surface of the substrate 8 to form red quantum dots. Of course, red quantum dots can also be produced by directly patterning the quantum dot color film.
[0138] In one embodiment, the display device further includes an insulating protective layer disposed on a side of the defining layer away from the substrate 8 and overlapping the color conversion layer 3. Because red quantum dots are easily corroded by water and oxygen, the insulating protective layer can be used to isolate the color conversion layer 3 from water and oxygen, thereby improving the light conversion effect of the color conversion layer 3.
[0139] Example 3
[0140] This embodiment is similar to the first embodiment, and the only difference is the specific structure of the light emitting device 2 .
[0141] like Figure 3 As shown, the light-emitting functional layer 204 of the light-emitting device 2 provided in this embodiment includes a first light-emitting functional layer 2041 and a second light-emitting functional layer 2042 stacked in a direction close to the driving backplane 1. The first light-emitting functional layer 2041 and the second light-emitting functional layer 2042 are respectively configured to emit light of a first color and a second color. For example, the first color is blue and the second color is green.
[0142] By utilizing a blue first light-emitting functional layer 2041 and a green second light-emitting functional layer 2042, and by controlling the current of the driving backplane 1, the light-emitting device 2 emits blue and green light. Because the color conversion layer 3 and the second light-emitting device 22 overlap, a single pixel is ultimately divided into two sub-pixels. One pixel emits blue and green light, while the other controls the second light-emitting device 22 to emit blue light, which then emits red light by stimulating the red quantum dots in the color conversion layer 3, achieving full color.
[0143] Using this method, one sub-pixel can be saved and higher resolution can be produced, solving the problem that the three-layer light-emitting functional layer can produce red, red and green, green, green and blue, and blue, but cannot produce red and blue. At the same time, it simplifies the process and improves the degree of mass production.
[0144] like Figure 3 As shown, the light-emitting device 2 further includes a first electrode 201, a first semiconductor layer 203, and a second semiconductor layer 205. The first semiconductor layer 203 is disposed between the driving backplane 1 and the first light-emitting functional layer 2041 and is electrically connected to the driving backplane 1. The second semiconductor layer 205 is disposed on a side of the second light-emitting functional layer 2042 away from the driving backplane 1. The first electrode 201 is disposed between the second semiconductor layer 205 and the color conversion layer 3 and is electrically connected to the driving backplane 1 via a lead 207 located on the periphery of the light-emitting device 2. The first electrode 201 and the lead 207 can be an integrally formed structure or a separate structure.
[0145] The light emitting device 2 adopts a vertical structure, and the two electrodes of the vertical structure are respectively on both sides of the light emitting device 2. Almost all the current passing through the N electrode 102 flows vertically through the light emitting device 2, and the current flowing horizontally is very small, which can avoid the current congestion problem of the upright structure and improve the luminous efficiency.
[0146] like Figure 3 As shown, the light-emitting device 2 further includes a first electron blocking layer 208 and a second electron blocking layer 209 . The first electron blocking layer 208 is arranged between the first semiconductor layer 203 and the second light-emitting functional layer 2042 , and the second electron blocking layer 209 is arranged between the first light-emitting functional layer 2041 and the second light-emitting functional layer 2042 .
[0147] The first electron blocking layer 208 is used to isolate the first semiconductor layer 203 from the second light-emitting functional layer 2042 to reduce crosstalk; the second electron blocking layer 209 is used to isolate the first light-emitting functional layer 2041 from the second light-emitting functional layer 2042 to reduce crosstalk.
[0148] It should be noted that the current driving the backplane 1 controls the first light-emitting device 21 to emit monochromatic blue light, monochromatic green light, or a blue-green mixed light. For example, if the actual current is less than the first preset current, the first light-emitting functional layer 2041 is activated to emit blue light; if the actual current is greater than the second preset current, the second light-emitting functional layer 2042 is activated to emit green light. If the actual current is between the first and second preset currents, the first light-emitting device 21 emits a blue-green mixed light. Due to the presence of the first and second electron blocking layers 208 and 209, crosstalk from blue light is eliminated. In actual use, the second light-emitting device 22 can emit monochromatic blue light, monochromatic green light, or a blue-green mixed light, preferably blue light with higher energy.
[0149] like Figure 3 As shown, the display device further includes a defining layer 5 , which is arranged on the side of the first electrode 201 away from the driving backplane 1 . The defining layer 5 has a light-transmitting hole 51 overlapping with the second light-emitting device 22 , and the color conversion layer 3 is located in the light-transmitting hole 51 .
[0150] The confining layer 5, also known as a quantum dot barrier, can be made of an organic adhesive material, specifically a material with opposite hydrophobicity to the quantum dot solution or quantum dot color film, or the organic adhesive material can be surface-treated. Because hydrophobic molecules tend to be non-polar, they dissolve in neutral and non-polar solutions, such as organic solvents. However, hydrophobic molecules typically clump together in water, and water on the surface of a hydrophobic material forms a large contact angle, forming a droplet-like shape. Therefore, when the quantum dot solution or quantum dot color film is filled into the light-transmitting holes 51 of the confining layer 5, it forms a contact angle greater than 150° with the confining layer 5.
[0151] By opening a light-transmitting hole 51 in the limiting layer 5 and overlapping the light-transmitting hole 51 with the second light-emitting device 22 , the color conversion layer 3 will not block the second light-emitting device 22 after being placed in the light-transmitting hole 51 , thereby ensuring the effectiveness of the second light-emitting device 22 in emitting blue light.
[0152] By utilizing the through-hole structure of light-transmitting hole 51, the portion of first electrode 201 corresponding to light-transmitting hole 51 can be exposed. A red quantum dot solution or quantum dot color film can then be spin-coated into light-transmitting hole 51. The quantum dot solution or quantum dot color film remains only on the surface of first electrode 201, thereby forming red quantum dots. Alternatively, red quantum dots can be produced by direct patterning of the quantum dot color film.
[0153] In one embodiment, the display device further includes an insulating protective layer, which is disposed on a side of the defining layer 5 away from the driving backplane 1 and overlaps with the color conversion layer 3. Because red quantum dots are easily corroded by water and oxygen, the insulating protective layer can be used to isolate the color conversion layer 3 from water and oxygen, thereby improving the light conversion effect of the color conversion layer 3.
[0154] The manufacturing method of the display device provided in this embodiment includes the following steps:
[0155] 1. If Figure 3a As shown, the second semiconductor layer 205, the first light-emitting functional layer 2041, the second electron blocking layer 209, the second light-emitting functional layer 2042, the first electron blocking layer 208 and the first semiconductor layer 203 are epitaxially grown on the substrate 8 in sequence, and blue light and green light are emitted by controlling the current of the driving backplane 1;
[0156] 2. If Figure 3b As shown, the substrate 8 is turned upside down and removed, and the first semiconductor layer 203 is bonded to the driving backplane 1 having the driving circuit, and the first semiconductor layer 203 and the two P electrodes 101 of the driving backplane 1 are in contact and electrically connected;
[0157] 3. If Figure 3c As shown, a first through hole and a second through hole are formed in the light-emitting device 2 by an etching process. The first through hole is arranged between the adjacent P electrode 101 and the N electrode 102 in the driving backplane 1, and the second through hole is arranged between two adjacent P electrodes 101 in the driving backplane 1. The first through hole and the second through hole both penetrate the second semiconductor layer 205, the first light-emitting functional layer 2041, the second electron blocking layer 209, the second light-emitting functional layer 2042, the first electron blocking layer 208 and the first semiconductor layer 203, so that the driving backplane 1 is exposed. Then, an insulating material is filled in the first through hole and the second through hole to form an insulating layer, and the LED pixel etching process is implemented to divide a pixel into two sub-pixels. Then, a first electrode 201 is formed on the side of the second semiconductor layer 205 away from the driving backplane 1. The first electrode 201 is electrically connected to the N electrode 102 of the driving backplane 1 through a lead 207 located on the periphery of the light-emitting device 2.
[0158] 4. If Figure 3d As shown, a defining layer 5 is formed on the side of the first electrode 201 away from the driving backplane 1, and a light-transmitting hole 51 is etched in the defining layer 5, and the light-transmitting hole 51 and the second light-emitting device 22 are overlapped;
[0159] 5. If Figure 3e As shown, a red quantum dot solution or quantum dot color film is spin-coated into light-transmitting hole 51. The quantum dot solution or quantum dot color film remains only on the surface of first electrode 201, forming red quantum dots. Of course, red quantum dots can also be produced by methods such as direct patterning of the quantum dot color film. In this case, a pixel is divided into two sub-pixels, one of which emits blue and green light, while the other controls the second light-emitting device 22 to emit blue light, which then excites the red quantum dots in color conversion layer 3 to emit red light.
[0160] In another embodiment, Figure 3fAs shown, the light-emitting device 2 also includes a first electrode 201, a second electrode 202, a first semiconductor layer 203, and a second semiconductor layer 205. The first semiconductor layer 203 is arranged between the driving backplane 1 and the first light-emitting functional layer 2041, and the second semiconductor layer 205 is arranged between the second light-emitting functional layer 2042 and the color conversion layer 3. The first electrode 201 is electrically connected to the first semiconductor layer 203 and the driving backplane 1. One end of the second electrode 202 passes through the first light-emitting functional layer 2041 and the second light-emitting functional layer 2042 and is electrically connected to the second semiconductor layer 205, and the other end is electrically connected to the driving backplane 1.
[0161] like Figure 3f As shown, the light emitting device 2 further includes a substrate 8 , which is disposed on a side of the second semiconductor layer 205 away from the driving backplane 1 .
[0162] Specifically, a second semiconductor layer 205, a first light-emitting functional layer 2041, a second electron blocking layer 209, a second light-emitting functional layer 2042, a first electron blocking layer 208, a first semiconductor layer 203 and a reflective layer 12 are epitaxially grown on the substrate 8 in sequence, and blue light and green light are emitted by controlling the current of the driving backplane 1; the substrate 8 is inverted and a first through hole, a second through hole and an isolation through hole are etched, and the isolation through hole passes through the above-mentioned film layer and exposes the substrate, thereby realizing the separation of the first light-emitting device 21 and the second light-emitting device 22, and then the first electrode 201 contacts the first semiconductor layer 203 through the first through hole, and the second electrode 202 contacts the second semiconductor layer 205 through the second through hole, and the first electrode 201 and the second electrode 202 are directly electrically connected to the P electrode 101 and the N electrode 102 of the driving backplane 1 in a flip-chip manner, and the process is simple.
[0163] like Figure 3f As shown, the light-emitting device 2 further includes a defining layer 5 , which is disposed on a side of the substrate 8 away from the driving backplane 1 . The defining layer 5 has a light-transmitting hole 51 that overlaps with the second light-emitting device 22 , and the color conversion layer 3 is located in the light-transmitting hole 51 .
[0164] Specifically, after inverting the first electrode 201 and the second electrode 202, the substrate 8 is positioned on the side of the light-emitting device 2 away from the driver backplane 1. The surface of the substrate 8 away from the driver backplane 1 can be thinned before forming the limiting layer 5 to reduce the overall thickness of the display device, meeting the requirements of lightweight and small size. Then, the limiting layer 5 is formed on this surface, and a light-transmitting hole 51 is etched in the limiting layer 5. The light-transmitting hole 51 is arranged to overlap with the second light-emitting device 22. After that, a red quantum dot solution or quantum dot color film is spin-coated into the light-transmitting hole 51. The quantum dot solution or quantum dot color film remains only on the surface of the first electrode 201 to form red quantum dots.
[0165] Example 4
[0166] This embodiment is similar to the first embodiment, and the only difference is the specific structure of the light emitting device 2 .
[0167] like Figure 4 As shown, the light-emitting functional layer 204 of the light-emitting device 2 provided in this embodiment includes a first light-emitting functional layer 2041 and a second light-emitting functional layer 2042 stacked in a direction close to the driving backplane 1. The first light-emitting functional layer 2041 and the second light-emitting functional layer 2042 are respectively configured to emit light of a first color and a second color. For example, the first color is blue and the second color is green.
[0168] By utilizing a blue first light-emitting functional layer 2041 and a green second light-emitting functional layer 2042, and by controlling the current of the driving backplane 1, the light-emitting device 2 emits blue and green light. Because the color conversion layer 3 and the second light-emitting device 22 overlap, a single pixel is ultimately divided into two sub-pixels. One pixel emits blue and green light, while the other controls the second light-emitting device 22 to emit blue light, which then emits red light by stimulating the red quantum dots in the color conversion layer 3, achieving full color.
[0169] Using this method, one sub-pixel can be saved and higher resolution can be produced, solving the problem that the three-layer light-emitting functional layer 204 can produce red, red and green, green, green and blue, and blue, but cannot produce red and blue. At the same time, the process is simplified and the degree of mass production is improved.
[0170] In one embodiment, Figure 4 As shown, the light-emitting device 2 also includes a first electrode 201, a second electrode 202, a first semiconductor layer 203, and a second semiconductor layer 205. The first semiconductor layer 203 is arranged between the driving backplane 1 and the second light-emitting functional layer 2042, and the second semiconductor layer 205 is arranged between the first light-emitting functional layer 2041 and the color conversion layer 3. The first electrode 201 is electrically connected to the first semiconductor layer 203 and the driving backplane 1. One end of the second electrode 202 passes through the first light-emitting functional layer 2041 and the second light-emitting functional layer 2042 and is electrically connected to the second semiconductor layer 205, and the other end is electrically connected to the driving backplane 1.
[0171] like Figure 4 As shown, the light-emitting device 2 further includes a first electron blocking layer 208 and a second electron blocking layer 209 . The first electron blocking layer 208 is arranged between the first semiconductor layer 203 and the second light-emitting functional layer 2042 , and the second electron blocking layer 209 is arranged between the first light-emitting functional layer 2041 and the second light-emitting functional layer 2042 .
[0172] The first electron blocking layer 208 is used to isolate the first semiconductor layer 203 from the second light-emitting functional layer 2042 to reduce crosstalk; the second electron blocking layer 209 is used to isolate the first light-emitting functional layer 2041 from the second light-emitting functional layer 2042 to reduce crosstalk.
[0173] In one embodiment, the color conversion layer 3 includes a conversion semiconductor layer and a color conversion material. The conversion semiconductor layer is arranged on the side of the second light-emitting device 22 away from the driving backplane 1. A porous structure 213 is provided in the conversion semiconductor layer, and the color conversion material is filled in the porous structure 213.
[0174] Among them, the conversion semiconductor layer adopts N-GaN, the porous structure 213 of the conversion semiconductor layer is nanopore, the color conversion material is a quantum dot solution, and the nanopore structure is used as the quantum dot solution carrier layer to realize material mixing between the conversion semiconductor layer and the color conversion material, thereby avoiding the problem of uneven distribution of quantum dots in the quantum dot film. The nanopore structure can scatter light, effectively improving the intensity and purity of the emitted red light.
[0175] In one embodiment, Figure 4 As shown, the first light emitting device 21 further includes a third semiconductor layer 206 , which is disposed on a side of the second semiconductor layer 205 away from the driving backplane 1 , and the color conversion layer 3 and the third semiconductor layer 206 of the first light emitting device 21 are disposed on the same layer.
[0176] The third semiconductor layer is made of N-GaN. Since the color conversion layer 3 and the second light-emitting device 22 overlap, the color conversion layer 3 and the third semiconductor layer 206 of the first light-emitting device 21 are co-located, ensuring excellent flatness between the first and second light-emitting devices 21, 22. Furthermore, the third semiconductor layer 206 and the conversion semiconductor layer are made of the same material. During manufacturing, after a layer of N-GaN is formed, the portion corresponding to the second light-emitting device 22 is then dip-treated, saving manufacturing steps and reducing process costs.
[0177] In one embodiment, Figure 4 As shown, the display device further includes an isolation layer 210 . The isolation layer 210 of the first light emitting device 21 is disposed between the second semiconductor layer 205 and the third semiconductor layer 206 . The isolation layer 210 of the second light emitting device 22 is disposed between the color conversion layer 3 and the second semiconductor layer 205 .
[0178] The isolation layer 210 can also be called an intrinsic GaN layer. The isolation layer 210 serves as an isolation layer between the color conversion layer 3 and the second semiconductor layer 205 , thereby preventing the second semiconductor layer 205 from being affected when etching the porous structure 213 and acting as a barrier.
[0179] The method for manufacturing a display device provided in this embodiment includes the following steps:
[0180] Step 1: Figure 4a As shown, the third semiconductor layer 206, the isolation layer 210, the second semiconductor layer 205, the first light-emitting functional layer 2041, the second electron blocking layer 209, the second light-emitting functional layer 2042, the first electron blocking layer 208 and the first semiconductor layer 203 are epitaxially grown in sequence on the substrate 8. Of course, it is understandable that the positions of the first light-emitting functional layer 2041 and the second light-emitting functional layer 2042 can be swapped.
[0181] Step 2: Figure 4b As shown, four through holes are etched in the light-emitting device 2, which are, from right to left, the second through hole 214 of the first light-emitting device 21, the isolation through hole 215, the second through hole 214 of the second light-emitting device 22, and the etched through hole 216. The second through hole 214 exposes the second semiconductor layer 205, the isolation through hole 215 exposes the substrate 8, and the etched through hole 216 exposes the third semiconductor layer 206.
[0182] Step 3: Figure 4c As shown, an insulating protective layer 7 is formed on the side of the first semiconductor layer 203 away from the substrate 8, and the insulating protective layer 7 only covers the isolation through hole 215, that is, the insulating protective layer 7 exposes the etched through hole 216, the second through hole 214 of the first light-emitting device 21, and the second through hole 214 of the second light-emitting device 22, and forms the first through hole 217 of the first light-emitting device 21 and the second light-emitting device 22.
[0183] Step 4: Figure 4d As shown, the first electrode 201 is disposed through the first through hole 217 to contact and electrically connect with the first semiconductor layer 203 , and the second electrode 202 is disposed through the second through hole 214 to contact and electrically connect with the second semiconductor layer 205 .
[0184] Step 5: Figure 4e As shown, the semiconductor layer 206 is immersed in an oxalic acid solution with a concentration of about 10% to 80%. The oxalic acid solution contacts the third semiconductor layer 206 through the etched through-holes 216 to form a conversion semiconductor layer with a porous structure 213.
[0185] Step 6: Figure 4f As shown, the quantum dot solution is immersed and distributed in the porous structure 213 by means of pressure or other methods to form the color conversion layer 3. The porous structure 213 serves as a carrier layer for the quantum dot solution, thereby avoiding the problem of uneven distribution of the quantum dot solution in the quantum dot film and effectively improving the intensity and purity of the emitted red light.
[0186] Example 5
[0187] This embodiment is similar to the second embodiment, and the only difference lies in the detailed structure of the light emitting device 2 .
[0188] like Figure 5 As shown, the light-emitting device 2 provided in this embodiment includes a first light-emitting device 21, a second light-emitting device 22 and a third light-emitting device 23. The first light-emitting device 21 and the second light-emitting device 22 are arranged on the same layer, the third light-emitting device 23 is arranged on the side of the first light-emitting device 21 away from the driving backplane 1, and the color conversion layer 3 and the third light-emitting device 23 are arranged on the same layer.
[0189] Because the first and second light-emitting devices 21, 22 both emit blue light, and the third light-emitting device 23 emits green light, the display device only requires two types of LEDs, blue and blue-green, reducing the thickness of the display device and the complexity of the process. Furthermore, because the color conversion layer 3 and the third light-emitting device 23 are co-located, no additional thickness is added, resulting in a thinner display device. This also reduces the distance between the light-emitting device 2 and the light-emitting surface, making crosstalk less likely to occur.
[0190] like Figure 5 、 Figure 5a and Figure 5b As shown, the light emitting device 2 further includes a first electrode 201 and a second electrode 202 . The first electrode 201 is electrically connected to the first light emitting device 21 , the second light emitting device 22 and the driving backplane 1 . The second electrode 202 is electrically connected to the third light emitting device 23 and the driving backplane 1 .
[0191] That is, the first light-emitting device 21 and the second light-emitting device 22 are electrically connected to the driving backplane 1 through the same first electrode 201. The first electrode 201 serves as a common electrode, so that the driving backplane 1 controls the first light-emitting device 21 and the second light-emitting device 22 to emit blue light. At the same time, only the third light-emitting device 23 is electrically connected to the driving backplane 1 through the second electrode 202. The second electrode 202 serves as an independent electrode, so that the driving backplane 1 controls the third light-emitting device 23 to emit green light alone.
[0192] like Figure 5 As shown, the light emitting device 2 further includes a first connecting electrode 211 , which is provided on the same layer as the first light emitting device 21 and the second light emitting device 22 . The first electrode 201 is electrically connected to the driving backplane 1 through the first connecting electrode 211 .
[0193] Specifically, the first connecting electrode 211 flattens the surface of the first light-emitting device 21 and the second light-emitting device 22 away from the driving backplane 1 without increasing the thickness, making the thickness of the entire display device thinner, and at the same time realizing the intermediate connection between the first electrode 201 and the driving backplane 1.
[0194] like Figure 5As shown, the light emitting device 2 further includes a second connecting electrode 212 . The second connecting electrode 212 and the third light emitting device 23 are arranged on the same layer. The second electrode 202 is electrically connected to the driving backplane 1 through the second connecting electrode 212 .
[0195] Specifically, the second connection electrode 212 , the color conversion layer 3 and the third light emitting device 23 are arranged in the same layer without adding extra thickness, so that the thickness of the entire display device is relatively thin, while also realizing the intermediate connection between the second electrode 202 and the driving backplane 1 .
[0196] In one embodiment, the second electrode 202 is disposed on a side of the third light-emitting device 23 away from the driver backplane 1. The second electrode 202 is a transparent structure. That is, the second electrode 202 is located on the light-emitting side surface of the third light-emitting device 23. The transparent structure of the second electrode 202 does not affect the light emission of the third light-emitting device 23, thereby improving the light extraction effect.
[0197] The manufacturing steps of the display device provided in this embodiment are as follows:
[0198] Step 1: Figure 5c and Figure 5d As shown, the first light emitting device 21 and the second light emitting device 22 are bonded to the driving backplane 1 having a driving circuit, and the first light emitting device 21 and the second light emitting device 22 are respectively in contact with the two P electrodes 101 of the driving backplane 1 and electrically connected.
[0199] Step 2: Figure 5e As shown, a first connection electrode 211 and an insulating layer are formed on the side of the driving backplane 1 facing the first light emitting device 21 . The insulating layer is arranged between two adjacent P electrodes 101 and between adjacent P electrodes 101 and N electrodes 102 in the driving backplane 1 .
[0200] Step 3: Figure 5f As shown, a first electrode 201 is formed on a side of the first light emitting device 21 and the second light emitting device 22 away from the driving backplane 1 , and the first electrode 201 is electrically connected to the N electrode 102 of the driving backplane 1 through a first connecting electrode 211 .
[0201] Step 4, such as Figure 5g As shown, a third light emitting device 23 is formed on a side of the first electrode 201 away from the driving backplane 1 .
[0202] Step 5: Figure 5h As shown, the portion of the third light emitting device 23 corresponding to the first light emitting device 21 and the second light emitting device 22 is removed by an etching process, thereby forming a green sub-pixel.
[0203] Step 6: Figure 5iAs shown, a second connection electrode 212 and a defining layer 5 are formed on a side of the first electrode 201 away from the driving backplane 1 , and a light-transmitting hole 51 is provided in the defining layer 5 .
[0204] Step 7: Figure 5j As shown, a second electrode 202 is formed on a side of the third light-emitting device 23 away from the driving backplane 1, and the second electrode 202 is provided with a second opening, which is overlapped with the first light-emitting device 21 and the second light-emitting device 22 to prevent interference with the light emitted by the first light-emitting device 21 and the second light-emitting device 22, and the second electrode 202 is electrically connected to the driving backplane 1 through the second connecting electrode 212.
[0205] Step 8: Figure 5k As shown, the color conversion layer 3 is disposed in the light-transmitting hole 51 , so that the blue light emitted by the second light-emitting device 22 is converted into red light by the color conversion layer 3 .
[0206] In another embodiment, Figure 5l As shown, the first light emitting device 21 and the second light emitting device 22 are arranged on the same layer, the third light emitting device 23 is arranged on the side of the first light emitting device 21 close to the driving backplane 1, and the color conversion layer 3 is arranged on the side of the second light emitting device 22 away from the third light emitting device 23.
[0207] That is, the third light-emitting device 23 is first made on the driving backplane 1, and then the first light-emitting device 21 and the second light-emitting device 22 are formed on the same layer on the side of the third light-emitting device 23 away from the driving backplane 1. The display device only needs to produce blue and blue-green LEDs, which reduces the thickness of the display device and reduces the complexity of the process.
[0208] like Figure 5l As shown, the light-emitting device 2 also includes a first connecting electrode 211 and a second connecting electrode 212. The first connecting electrode 211 and the second light-emitting device 22 are arranged on the same layer, and the first electrode 201 is electrically connected to the driving backplane 1 through the first connecting electrode 211. The second connecting electrode 212 is arranged on the side of the second electrode 202 facing the driving backplane 1 and is arranged on the same layer as the third light-emitting device 23. The second electrode 202 is electrically connected to the driving backplane 1 through the second connecting electrode 212, and the color conversion layer 3 is arranged on the side of the first electrode 201 away from the second light-emitting device 22.
[0209] The first connecting electrode 211 flattens the surface of the first light-emitting device 21 and the second light-emitting device 22 on the side away from the driver backplane 1 without adding any additional thickness, thereby reducing the thickness of the entire display device. Furthermore, the first connecting electrode 211 also provides an intermediate connection between the first electrode 201 and the driver backplane 1. Furthermore, the second connecting electrode 212 and the third light-emitting device 23 are provided on the same layer without adding any additional thickness, thereby reducing the thickness of the entire display device. Furthermore, the second connecting electrode 212 also provides an intermediate connection between the second electrode 202 and the driver backplane 1.
[0210] In one embodiment, the first electrode 201 is a transparent structure. Since the first electrode 201 is located on the light-emitting side surface of the second light-emitting device 22, the transparent first electrode 201 does not affect the light emission of the second light-emitting device 22, thereby improving the light-emitting effect.
[0211] Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the present disclosure that follow the general principles of the present disclosure and include common knowledge or customary techniques in the art not disclosed herein. The description and examples are to be considered as exemplary only, with the true scope and spirit of the present disclosure being indicated by the appended claims.
Claims
1. A display device, characterized in that: The display device includes: Driver backplane; a light-emitting layer, disposed on one side of the driving backplane, and comprising a plurality of light-emitting units, wherein each of the light-emitting units comprises a light-emitting device, wherein the light-emitting device comprises a first light-emitting device and a second light-emitting device, wherein the first light-emitting device is configured to emit light of a first color and / or a second color, and the second light-emitting device is configured to emit light of the first color; The color conversion layer is arranged on a side of the light emitting device away from the driving backplane and overlaps with the second light emitting device, and is used for converting the light of the first color into light of a third color.
2. The display device according to claim 1, wherein The first light emitting device is configured to emit light of the first color. The light emitting device further includes a third light emitting device, and the third light emitting device is configured to emit light of the second color.
3. The display device according to claim 2, wherein: The display device further includes: a first planar layer, covering the light-emitting device; The defining layer is provided on a side of the first flat layer away from the driving backplane and has a light-transmitting hole overlapping with the second light-emitting device, and the color conversion layer is located in the light-transmitting hole.
4. The display device according to claim 2, wherein: The display device further includes: The filter portion is provided on a side of the light emitting device away from the driving backplane and overlaps with the second light emitting device. The color of the filter portion is the third color.
5. The display device according to claim 2, wherein The light-emitting device includes a first electrode, a second electrode, and a first semiconductor layer, a light-emitting functional layer, a second semiconductor layer, and a third semiconductor layer stacked in a direction away from the driving backplane, wherein the first electrode is electrically connected to the first semiconductor layer and the driving backplane, and the second electrode is electrically connected to the second semiconductor layer and the driving backplane; The third semiconductor layer of the third light emitting device has a porous structure.
6. The display device according to claim 5, wherein: The third semiconductor layer corresponding to the first light emitting device, the second light emitting device and the third light emitting device is a continuous film layer structure.
7. The display device according to claim 5, wherein: The display device further includes: a substrate, disposed on a side of the third semiconductor layer away from the driving backplane; The defining layer is arranged on a side of the substrate away from the driving backplane, the defining layer has a light-transmitting hole overlapping with the second light-emitting device unit, and the color conversion layer is located in the light-transmitting hole.
8. The display device according to claim 1, wherein The light-emitting devices each include a first light-emitting functional layer and a second light-emitting functional layer stacked in a direction close to the driving backplane, and the first light-emitting functional layer and the second light-emitting functional layer are used to emit light of a first color and light of a second color, respectively.
9. The display device according to claim 8, wherein: The light-emitting device also includes a first electrode, a first semiconductor layer, and a second semiconductor layer. The first semiconductor layer is arranged between the driving backplane and the first light-emitting functional layer and is electrically connected to the driving backplane. The second semiconductor layer is arranged on the side of the second light-emitting functional layer away from the driving backplane. The first electrode is arranged between the second semiconductor layer and the color conversion layer, and is electrically connected to the driving backplane through a lead located on the periphery of the light-emitting device.
10. The display device according to claim 8, wherein The light-emitting device also includes a first electrode, a second electrode, a first semiconductor layer, and a second semiconductor layer. The first semiconductor layer is arranged between the driving backplane and the first light-emitting functional layer, and the second semiconductor layer is arranged between the second light-emitting functional layer and the color conversion layer. The first electrode is electrically connected to the first semiconductor layer and the driving backplane, one end of the second electrode passes through the first light-emitting functional layer and the second light-emitting functional layer and is electrically connected to the second semiconductor layer, and the other end is electrically connected to the driving backplane.
11. The display device according to claim 9, wherein The display device further includes a defining layer, which is arranged on a side of the first electrode away from the driving backplane. The defining layer has a light-transmitting hole overlapping with the second light-emitting device, and the color conversion layer is located in the light-transmitting hole.
12. The display device according to claim 10, wherein The display device also includes a substrate and a defining layer, wherein the substrate is arranged on a side of the second semiconductor layer away from the driving backplane, and the defining layer is arranged on a side of the substrate away from the driving backplane, and the defining layer has a light-transmitting hole arranged to overlap with the second light-emitting device, and the color conversion layer is located in the light-transmitting hole.
13. The display device according to claim 9 or 10, characterized in that The light-emitting device further includes a first electron blocking layer and a second electron blocking layer, wherein the first electron blocking layer is disposed between the first semiconductor layer and the second light-emitting functional layer, and the second electron blocking layer is disposed between the first light-emitting functional layer and the second light-emitting functional layer.
14. The display device according to claim 1, wherein The light emitting device includes a first light emitting functional layer and a second light emitting functional layer stacked in a direction close to the driving backplane, wherein the first light emitting functional layer and the second light emitting functional layer are respectively used to emit light of a first color and light of a second color; The color conversion layer includes a conversion semiconductor layer and a color conversion material. The conversion semiconductor layer is arranged on a side of the second light-emitting device away from the driving backplane. A porous structure is provided in the conversion semiconductor layer, and the color conversion material is filled in the porous structure.
15. The display device according to claim 14, wherein: The light-emitting device further includes a first electrode, a second electrode, a first semiconductor layer, and a second semiconductor layer, wherein the first semiconductor layer is disposed between the driving backplane and the second light-emitting functional layer, and the second semiconductor layer is disposed between the first light-emitting functional layer and the color conversion layer, the first electrode is electrically connected to the first semiconductor layer and the driving backplane, and one end of the second electrode passes through the first light-emitting functional layer and the second light-emitting functional layer and is electrically connected to the second semiconductor layer, and the other end is electrically connected to the driving backplane; The first light emitting device further includes a third semiconductor layer, which is arranged on a side of the second semiconductor layer away from the driving backplane, and the color conversion layer and the third semiconductor layer of the first light emitting device are arranged on the same layer.
16. The display device according to claim 15, wherein: The light-emitting device further includes a first electron blocking layer and a second electron blocking layer, wherein the first electron blocking layer is disposed between the first semiconductor layer and the second light-emitting functional layer, and the second electron blocking layer is disposed between the first light-emitting functional layer and the second light-emitting functional layer.
17. The display device according to claim 2, wherein: The first light-emitting device and the second light-emitting device are arranged on the same layer, the third light-emitting device is arranged on a side of the first light-emitting device away from the driving backplane, and the color conversion layer and the third light-emitting device are arranged on the same layer; Alternatively, the first light-emitting device and the second light-emitting device are arranged on the same layer, the third light-emitting device is arranged on a side of the first light-emitting device close to the driving backplane, and the color conversion layer is arranged on a side of the second light-emitting device away from the third light-emitting device.
18. The display device according to claim 17, wherein: The light-emitting device also includes a first electrode and a second electrode, the first electrode is arranged on a side of the first light-emitting device away from the driving backplane, and the second electrode is arranged on a side of the third light-emitting device away from the driving backplane, the first light-emitting device and the second light-emitting device are electrically connected to the driving backplane through the first electrode, and the third light-emitting device is electrically connected to the driving backplane through the second electrode.
19. The display device according to claim 18, wherein The display device further includes a first connecting electrode and a second connecting electrode, wherein the first connecting electrode is provided on the same layer as the first light-emitting device and the second light-emitting device, and the first electrode is electrically connected to the driving backplane via the first connecting electrode; the second connecting electrode is provided on the same layer as the third light-emitting device, and the second electrode is electrically connected to the driving backplane via the second connecting electrode; The second electrode is a transparent structure.
20. The display device according to claim 18, wherein The display device further includes a first connecting electrode and a second connecting electrode, wherein the first connecting electrode and the second light-emitting device are provided on the same layer, the first electrode is electrically connected to the driving backplane via the first connecting electrode, the second connecting electrode is provided on a side of the second electrode facing the driving backplane and is provided on the same layer as the third light-emitting device, the second electrode is electrically connected to the driving backplane via the second connecting electrode, and the color conversion layer is provided on a side of the first electrode away from the second light-emitting device; The first electrode is a transparent structure.