Array substrate, display panel, display device and preparation method of array substrate

Abstract

The invention discloses an array substrate, a display panel, a display device and a preparation method of the array substrate. The array substrate comprises a substrate and an isolation structure, the isolation structure is arranged on the substrate and forms a plurality of isolation openings in an enclosing mode, the isolation structure comprises a first isolation structure and a second isolation structure, and the distance between the first isolation structure and the substrate in the thickness direction is larger than the distance between the second isolation structure and the substrate in the thickness direction. When the organic packaging material is prepared, air exists between the organic packaging material and the isolation structures, so that holes sealed by the organic packaging material can be formed, and a height difference exists between the contact positions of the first isolation structure and the second isolation structure; and the hole is exposed at the contact position of the first isolation structure and the second isolation structure and can be filled with a subsequent organic packaging material.

Description

Technical Field

[0001] The present application relates to the display field, and in particular to an array substrate, a display panel, a display device, and a method for preparing the array substrate. Background Art

[0002] Organic Light Emitting Diode (OLED) and flat-panel display devices based on technologies such as Light Emitting Diode (LED) have been widely used in various consumer electronic products such as mobile phones, televisions, laptops, and desktop computers due to their advantages such as high image quality, power saving, thin body, and wide range of applications, becoming the mainstream display device.

[0003] However, the performance of current OLED display products needs to be improved. Summary of the Invention

[0004] The embodiments of the present application provide an array substrate, a display panel, a display device, and a method for manufacturing the array substrate, aiming to improve the performance of OLED display products.

[0005] A first aspect embodiment of the present application provides an array substrate, comprising: a substrate; an isolation structure located on one side of the substrate, the isolation structure enclosing an isolation opening, the isolation structure comprising a first isolation structure and a second isolation structure, the distance between a surface of the first isolation structure on a side facing away from the substrate and the substrate in a thickness direction being greater than the distance between a surface of the second isolation structure on a side facing away from the substrate and the substrate in a thickness direction, the second isolation structure being located on at least one side of the isolation opening, the first isolation structure comprising a first layer and a second layer, the second layer being located on a side of the first layer facing away from the substrate, and an orthographic projection of the first layer on the substrate being within an orthographic projection of the second layer on the substrate.

[0006] According to an embodiment of the first aspect of the present application, the second isolation structure has the same structure as the first isolation structure.

[0007] According to any of the aforementioned embodiments of the first aspect of the present application, the array substrate further includes: a pixel definition layer located on one side of the substrate, the pixel definition layer including a pixel defining portion and a pixel opening formed by the pixel defining portion, the pixel opening and the isolation opening are connected, and the isolation structure is located on the side of the pixel defining portion facing away from the substrate.

[0008] According to any of the aforementioned embodiments of the first aspect of the present application, the array substrate further includes a pixel electrode, which is located on the side of the pixel definition layer facing the substrate, and the orthographic projection of the pixel electrode on the substrate and the orthographic projection of the pixel opening on the substrate at least partially overlap.

[0009] According to any of the aforementioned embodiments of the first aspect of the present application, the pixel defining portion is provided with an accommodating opening, the first isolation structure is located on a side of the pixel defining portion facing away from the substrate, and the second isolation structure is located in the accommodating opening.

[0010] According to any of the aforementioned embodiments of the first aspect of the present application, the second isolation structure includes a sublayer, and a size of the first isolation structure along the thickness direction is larger than a size of the sublayer along the thickness direction.

[0011] According to any of the aforementioned embodiments of the first aspect of the present application, the sub-layer and the second layer are made of the same material.

[0012] According to any of the aforementioned embodiments of the first aspect of the present application, the array substrate also includes: a first dam structure, located on a side of at least part of the sublayer facing away from the substrate, the extension direction of the first dam structure is the same as the extension direction of the corresponding second isolation structure, and the first dam structure is in contact and connected with the first isolation structure.

[0013] According to any of the aforementioned embodiments of the first aspect of the present application, the cross-section of the first dam structure is a regular trapezoid or an inverted trapezoid.

[0014] According to any of the aforementioned embodiments of the first aspect of the present application, a plurality of first dam structures are arranged at intervals in a direction from an isolation opening to an adjacent isolation opening.

[0015] According to any of the aforementioned embodiments of the first aspect of the present application, in the direction from the isolation opening to the adjacent isolation opening, there are two or four first dam structures.

[0016] According to any of the aforementioned embodiments of the first aspect of the present application, the sublayer includes a second dam structure, the extension direction of the second dam structure is the same as the extension direction of the corresponding second isolation structure, and the second dam structure is in contact with the first isolation structure.

[0017] According to any of the aforementioned embodiments of the first aspect of the present application, the cross-section of the second dam structure is a regular trapezoid or an inverted trapezoid.

[0018] According to any of the aforementioned embodiments of the first aspect of the present application, the sub-layer and the second layer are made of the same material.

[0019] According to any of the aforementioned embodiments of the first aspect of the present application, the second layer includes a conductive material or an insulating material.

[0020] According to any of the aforementioned embodiments of the first aspect of the present application, the first layer and the second layer both include metal materials, and the materials of the first layer and the second layer are different.

[0021] According to any of the aforementioned embodiments of the first aspect of the present application, the first isolation structure further includes a third layer located on the side of the first layer facing the substrate, and the orthographic projection of the first layer on the substrate is located within the orthographic projection of the third layer on the substrate.

[0022] According to any of the aforementioned embodiments of the first aspect of the present application, the material of the first layer includes aluminum, silver or copper.

[0023] According to any of the aforementioned embodiments of the first aspect of the present application, the material of the second layer includes titanium or molybdenum.

[0024] According to any of the aforementioned embodiments of the first aspect of the present application, the material of the third layer includes titanium or molybdenum.

[0025] According to any of the aforementioned embodiments of the first aspect of the present application, the first isolation structure is extended along the first direction, the second isolation structure is extended along the second direction, and the first direction and the second direction intersect.

[0026] According to any of the aforementioned embodiments of the first aspect of the present application, the first isolation structure is located on both sides of the isolation opening in the second direction, and the second isolation structure is located on both sides of the isolation opening in the first direction.

[0027] According to any of the aforementioned embodiments of the first aspect of the present application, in the thickness direction, the difference between the distance between the surface of the first isolation structure facing away from the substrate and the substrate and the distance between the surface of the second isolation structure facing away from the substrate and the substrate is 0.3μm to 3μm.

[0028] An embodiment of the second aspect of the present application provides an array substrate, comprising: a substrate; a pixel definition layer located on one side of the substrate, the pixel definition layer comprising a pixel defining portion and a pixel opening enclosed by the pixel defining portion; an isolation structure located on a side of the pixel defining portion facing away from the substrate, the isolation structure comprising a first isolation structure located on both sides of the pixel opening in a first direction and arranged opposite to each other, the first isolation structure comprising a first layer and a second layer, the second layer being located on a side of the first layer facing away from the substrate, and an orthographic projection of the first layer on the substrate being within an orthographic projection of the second layer on the substrate.

[0029] According to an implementation of the second aspect of the present application, the pixel definition layer further includes a third dam structure, a groove is formed in part of the pixel defining portion, and the third dam structure is located in the groove.

[0030] According to any of the aforementioned embodiments of the second aspect of the present application, the orthographic projection of the pixel opening on the substrate is located in the area enclosed by the orthographic projection of the third dam structure on the substrate and the orthographic projection of the first isolation structure on the substrate.

[0031] An embodiment of a third aspect of the present application provides a display panel, which includes the array substrate of any of the above embodiments.

[0032] According to an implementation of the third aspect of the present application, the display panel includes: a light-emitting layer located on one side of a substrate array substrate, the light-emitting layer including light-emitting units spaced apart from each other; a first electrode layer located on a side of the light-emitting layer facing away from the substrate, the first electrode layer including a first electrode covering the light-emitting unit, the first electrode being electrically connected to at least the first isolation structure.

[0033] According to any of the aforementioned implementations of the third aspect of the present application, the display panel further includes: a first encapsulation layer located on a side of the first electrode layer facing away from the substrate.

[0034] According to any of the aforementioned embodiments of the third aspect of the present application, the material of the first encapsulation layer includes an inorganic material.

[0035] According to any of the aforementioned implementations of the third aspect of the present application, the display panel further includes: a second encapsulation layer located on a side of the first encapsulation layer facing away from the substrate.

[0036] According to any of the aforementioned embodiments of the third aspect of the present application, the material of the second encapsulation layer includes an organic material.

[0037] According to any of the aforementioned implementations of the third aspect of the present application, the display panel further includes: a third encapsulation layer located on a side of the second encapsulation layer facing away from the substrate.

[0038] According to any of the aforementioned embodiments of the third aspect of the present application, the material of the third encapsulation layer includes an inorganic material.

[0039] An embodiment of a fourth aspect of the present application provides a display device, which includes a display panel according to any of the above embodiments.

[0040] An embodiment of a fifth aspect of the present application provides a method for preparing an array substrate, the method comprising:

[0041] preparing a substrate;

[0042] An isolation structure is prepared on one side of the substrate, the isolation structure encloses an isolation opening, the isolation structure includes a first isolation structure and a second isolation structure, the distance between the surface of the first isolation structure on the side facing away from the substrate and the substrate in the thickness direction is greater than the distance between the surface of the second isolation structure on the side facing away from the substrate and the substrate in the thickness direction, the second isolation structure is located on at least one side of the isolation opening, the first isolation structure includes a first layer and a second layer, the second layer is located on the side of the first layer facing away from the substrate, and the orthographic projection of the first layer on the substrate is located within the orthographic projection of the second layer on the substrate.

[0043] According to an embodiment of the fifth aspect of the present application, in the step of preparing the isolation structure on one side of the substrate, the method further includes:

[0044] preparing a first material layer on one side of the substrate;

[0045] Preparing a second material layer on a side of the first material layer facing away from the substrate, and patterning the first and second material layers to obtain a first layer and a second layer located on a side of the first layer facing away from the substrate, wherein the orthographic projection of the first layer on the substrate is located within the orthographic projection of the second layer on the substrate, and the first and second layers are stacked to form a first isolation structure and a second isolation structure;

[0046] Before the step of preparing the first material layer on one side of the substrate, the method further comprises:

[0047] A pixel definition material layer is prepared on one side of the substrate, and a receiving opening is opened on the pixel definition material layer; in the step of preparing the isolation structure on one side of the substrate, the formed second isolation structure is located in the receiving opening;

[0048] Alternatively, in the step of preparing the isolation structure on one side of the substrate, the method further comprises:

[0049] A first material layer is prepared on one side of the substrate, and the first material layer is patterned to obtain a first intermediate layer;

[0050] Preparing a second material layer on a side of the first intermediate layer facing away from the substrate, and patterning the second material layer to obtain a second layer located on a side of the first intermediate layer facing away from the substrate and a sublayer located on a side of the substrate, wherein the sublayer forms a second isolation structure;

[0051] The first intermediate layer is patterned to obtain a first layer, wherein the orthographic projection of the first layer on the substrate is located within the orthographic projection of the second layer on the substrate, and the first layer and the second layer are stacked to form a first isolation structure.

[0052] An embodiment of a sixth aspect of the present application provides a method for preparing an array substrate, the method comprising:

[0053] A pixel definition material layer is prepared on one side of the substrate, and the pixel definition material layer is patterned to obtain a pixel definition layer, wherein the pixel definition layer includes a pixel definition portion and a pixel opening formed by the pixel definition portion;

[0054] Prepare a first material layer on the side of the pixel definition material layer facing away from the substrate;

[0055] A second material layer is prepared on the side of the first material layer facing away from the substrate, and the first material layer and the second material layer are patterned to obtain a first layer and a second layer located on the side of the first layer facing away from the substrate, the orthographic projection of the first layer on the substrate is located within the orthographic projection of the second layer on the substrate, and the first layer and the second layer are stacked to form a first isolation structure; the first isolation structure is located on two opposite sides of the pixel opening.

[0056] According to the array substrate of the embodiment of the present application, the array substrate includes a substrate and an isolation structure. The isolation structure is arranged on the substrate and encloses a plurality of isolation openings. The isolation structure includes a first isolation structure and a second isolation structure. The distance between the first isolation structure and the substrate in the thickness direction is greater than the distance between the second isolation structure and the substrate in the thickness direction, that is, the first isolation structure is higher than the second isolation structure in the thickness direction, and there is a height difference between the contact positions of the first isolation structure and the second isolation structure. When the organic encapsulation material is subsequently prepared, the air between the organic encapsulation material and the isolation structure will form holes sealed by the organic encapsulation material. Due to the height difference between the contact positions of the first isolation structure and the second isolation structure, the holes are exposed at the contact positions of the first isolation structure and the second isolation structure and can be filled with the organic encapsulation material, thereby improving the problem that the holes are completely sealed by the organic encapsulation material when the height of each part of the isolation structure is the same, and the problem of explosion caused by the excessive pressure difference between the holes and the outside world when the external air pressure changes. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] Other features, objects and advantages of the present application will become more apparent by reading the following detailed description of non-limiting embodiments with reference to the accompanying drawings, in which the same or similar reference numerals represent the same or similar features and the accompanying drawings are not drawn to scale.

[0058] Figure 1 is a partial cross-sectional view of an array substrate provided in an embodiment of the present application;

[0059] Figure 2 is a partial cross-sectional view of an array substrate in another embodiment;

[0060] Figure 3 is a partial top view of an array substrate provided in an embodiment of the present application;

[0061] Figure 4 is a partial cross-sectional view of an array substrate in yet another embodiment;

[0062] Figure 5 is a partial cross-sectional view of an array substrate in yet another embodiment;

[0063] Figure 6 is a partial cross-sectional view of an array substrate in yet another embodiment;

[0064] Figure 7 is a partial cross-sectional view of an array substrate in yet another embodiment;

[0065] Figure 8 is a partial cross-sectional view of an array substrate in yet another embodiment;

[0066] Figure 9 is a partial cross-sectional view of an array substrate in yet another embodiment;

[0067] Figure 10 is a partial top view of an array substrate in another embodiment;

[0068] Figure 11 is a partial cross-sectional view of an array substrate in yet another embodiment;

[0069] Figure 12 is a partial cross-sectional view of an array substrate in yet another embodiment;

[0070] Figure 13 is a partial top view of an array substrate in yet another embodiment;

[0071] Figure 14 is a partial cross-sectional view of a display panel provided in an embodiment of the present application;

[0072] Figure 15 This is a schematic flow chart of a method for preparing an array substrate provided in an embodiment of the present application;

[0073] Figure 16 This is a schematic flow chart of a method for preparing an array substrate provided in another embodiment of the present application.

[0074] Description of reference numerals:

[0075] 10. Array substrate; 20. Display panel;

[0076] 100, substrate;

[0077] 200, isolation structure; 210, first isolation structure; 211, first layer; 212, second layer; 220, second isolation structure; 221, sublayer; 230, isolation opening;

[0078] 300, light-emitting layer; 310, light-emitting unit;

[0079] 400, first electrode layer; 410, first electrode;

[0080] 500, pixel definition layer; 510, pixel defining portion; 511, first pixel defining portion; 512, second pixel defining portion; 520, pixel opening; 530, pixel electrode; 540, receiving opening; 550, groove;

[0081] 600, first embankment structure;

[0082] 700, second embankment structure;

[0083] 800, third dam structure;

[0084] X, first direction; Y, second direction; Z, thickness direction. DETAILED DESCRIPTION

[0085] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only configured to explain the present application and are not configured to limit the present application. For those skilled in the art, the present application can be implemented without the need for some of these specific details. The following description of the embodiments is merely to provide a better understanding of the present application by illustrating the examples of the present application.

[0086] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or device comprising the element.

[0087] It should be understood that when describing the structure of a component, when a layer or a region is referred to as being "on" or "over" another layer or region, it may mean that it is directly on the other layer or region, or that other layers or regions are included between it and the other layer or region. Furthermore, if the component is turned over, the layer or region will be "below" or "beneath" the other layer or region.

[0088] The embodiments of the present application provide an array substrate, a display panel, a display device, and a method for manufacturing an array substrate. The following describes various embodiments of the array substrate, the display panel, the display device, and the method for manufacturing an array substrate in conjunction with the accompanying drawings.

[0089] An embodiment of the present application provides an array substrate, which may be an organic light emitting diode (OLED) array substrate.

[0090] See also Figures 1 to 3 , Figure 1 is a partial cross-sectional view of an array substrate provided in an embodiment of the present application; Figure 2 is a partial cross-sectional view of an array substrate in another embodiment; Figure 3 This is a partial top view of an array substrate provided in an embodiment of the present application.

[0091] like Figures 1 to 3 As shown, an embodiment of the first aspect of the present application provides an array substrate 10, the array substrate 10 includes a substrate 100 and an isolation structure 200; the isolation structure 200 is located on one side of the substrate 100, the isolation structure 200 encloses an isolation opening 230, the isolation structure 200 includes a first isolation structure 210 and a second isolation structure 220, the distance between the surface of the first isolation structure 210 facing away from the substrate 100 and the substrate 100 in the thickness direction Z is greater than the distance between the surface of the second isolation structure 220 facing away from the substrate 100 and the substrate 100 in the thickness direction Z; the second isolation structure 220 is located on at least one side of the isolation opening 230, the first isolation structure 210 includes a first layer 211 and a second layer 212, the second layer 212 is located on the side of the first layer 211 facing away from the substrate 100, and the orthographic projection of the first layer 211 on the substrate 100 is within the orthographic projection of the second layer 212 on the substrate 100.

[0092] According to an embodiment of the present application, the array substrate 10 includes a substrate 100 and an isolation structure 200. The isolation structure 200 is disposed on the substrate 100 and encloses a plurality of isolation openings 230. A first layer 211 and a second layer 212 are disposed to form the first isolation structure 210. The orthographic projection of the first layer 211, which is disposed near the substrate 100, on the substrate 100 is located within the orthographic projection of the second layer 212 on the substrate 100. The orthographic projection area of ​​the second layer 212 on the substrate 100 is larger than the orthographic projection area of ​​the first layer 211 on the substrate 100. The second layer 212 covers the surface of the first layer 211 near the second layer 212. In this case, the first layer 211 is recessed relative to the second layer 212 to form the isolation openings 230. During the subsequent preparation of the light-emitting layer, a significant drop occurs at the edge of the first isolation structure 210, and the first layer 211 is recessed relative to the second layer 212. This makes it difficult for the light-emitting layer to connect at the edge of the first isolation structure 210, resulting in breakage and formation of disconnected light-emitting units. This reduces carrier crosstalk within the light-emitting layer, improving the display effect of the array substrate 10. Furthermore, the preparation of the light-emitting units eliminates the need for precision masks, reducing the development and use of precision masks and lowering preparation costs. During the subsequent preparation of the first electrode layer, the first isolation structure 210 separates the first electrode layer to form mutually spaced first electrodes. These mutually spaced first electrodes can at least be electrically connected via the first isolation structure 210, enabling corresponding signal transmission and ensuring normal light emission of the light-emitting units. The isolation structure 200 includes a first isolation structure 210 and a second isolation structure 220. The distance between the first isolation structure 210 and the substrate 100 in the thickness direction Z is greater than the distance between the second isolation structure 220 and the substrate 100 in the thickness direction Z, that is, the first isolation structure 210 is arranged higher than the second isolation structure 220 in the thickness direction Z, and there is a height difference between the contact points of the first isolation structure 210 and the second isolation structure 220. When the organic encapsulation material is subsequently prepared, air between the organic encapsulation material and the first isolation structure 210 will form holes sealed by the organic encapsulation material. Due to the height difference between the contact points of the first isolation structure 210 and the second isolation structure 220, the holes at the contact points of the first isolation structure 210 and the second isolation structure 220 are exposed and can be filled with the organic encapsulation material. This improves the problem of holes existing and being completely sealed by the organic encapsulation material when the height of each part of the isolation structure 200 is the same, and the problem of glue explosion caused by the large internal and external pressure difference between the holes and the outside world when the external air pressure changes.

[0093] When preparing the organic encapsulating material, if the isolation structure 200 is originally at the same height, air may enter between the organic encapsulating material and the isolation structure 200, forming a void. However, in this embodiment, the height difference between the contact point of the first isolation structure 210 and the second isolation structure 220 can create a drop in the organic encapsulating material at the contact point between the first isolation structure 210 and the second isolation structure 220, allowing the void to be exposed at this point, thereby allowing the organic encapsulating material to fill the void. For example, if the second isolation structure 220 is shorter in the thickness direction Z, the air void formed between the first isolation structure 210 and the organic encapsulating material can be exposed through the side closest to the second isolation structure 220.

[0094] Patents 202310771124.9, 202310740412.8, 202310855866.X, 202311017132.0, 202311124847.6, and 202311091555.7 record relevant contents of the isolation structure for reference.

[0095] like Figure 3 As shown, the first isolation structure 210 extends in the first direction X and has a branch in the second direction Y. The second isolation structure 220 is in contact with and connected to the branch of the first isolation structure 210 in the second direction Y, so that the first isolation structure 210 and the second isolation structure 220 continuously surround to form an isolation opening 230.

[0096] Optionally, the second isolation structure 220 has the same structure as the first isolation structure 210 , that is, the second isolation structure 220 also includes a first layer 211 and a second layer 212 , so that the first isolation structure 210 and the second isolation structure 220 can be prepared simultaneously, simplifying the preparation process.

[0097] like Figure 1 As shown, in some optional embodiments, the array substrate 10 further includes a pixel definition layer 500, which is located on the substrate 100. The pixel definition layer 500 includes a pixel defining portion 510 and a pixel opening 520 formed by the pixel defining portion 510. The pixel opening 520 is connected to the isolation opening 230, and the isolation structure 200 is located on the side of the pixel defining portion 510 facing away from the substrate 100.

[0098] In these optional embodiments, the pixel defining portion 510 of the pixel definition layer 500 encloses the pixel defining portion 510 to set the light-emitting unit and realize normal light emission of the light-emitting unit. In addition, the pixel defining portion 510 defines the setting area of ​​each light-emitting unit to reduce the cross-color defect between the light-emitting units.

[0099] In some optional embodiments, the array substrate 10 further includes a pixel electrode 530 , which is located on the side of the pixel definition layer 500 facing the substrate 100 , and the orthographic projection of the pixel electrode 530 on the substrate 100 and the orthographic projection of the pixel opening 520 on the substrate 100 at least partially overlap.

[0100] In these optional embodiments, one of the pixel electrode 530 and the first electrode serves as the anode of the light-emitting unit, and the other serves as the cathode of the light-emitting unit. In the embodiment of the present application, the pixel electrode 530 serves as the anode of the light-emitting unit and the first electrode serves as the cathode of the light-emitting unit.

[0101] like Figure 1 and Figure 2 As shown, in some optional embodiments, the pixel defining portion 510 is provided with a receiving opening 540, the first isolation structure 210 is located on the side of the pixel defining portion 510 facing away from the substrate 100, and the second isolation structure 220 is located within the receiving opening 540, that is, the second isolation structure 220 is located on the side of the receiving opening 540 facing away from the substrate 100.

[0102] In these optional embodiments, the first isolation structure 210 is disposed on the pixel defining portion 510, and at least a portion of the second isolation structure 220 is disposed within the accommodating opening 540, such that the distance between the first isolation structure 210 and the substrate 100 in the thickness direction Z is greater than the distance between the second isolation structure 220 and the substrate 100 in the thickness direction Z, that is, the first isolation structure 210 is disposed higher than the second isolation structure 220 in the thickness direction Z, and a height difference exists between the contact positions of the first isolation structure 210 and the second isolation structure 220. Due to the height difference between the contact positions of the first isolation structure 210 and the second isolation structure 220, a hole is exposed at the contact position of the first isolation structure 210 and the second isolation structure 220 and can be filled with subsequent organic encapsulation material, thereby improving the problem of glue explosion caused by the excessive pressure difference between the hole and the outside world when the external air pressure changes when the hole exists and is completely sealed by the organic encapsulation material.

[0103] In some optional embodiments, the first isolation structure 210 and the second isolation structure 220 have the same size along the thickness direction Z.

[0104] In these optional embodiments, the first isolation structure 210 and the second isolation structure 220 have the same size in the thickness direction Z. When the structures of the first isolation structure 210 and the second isolation structure 220 are the same, the first isolation structure 210 and the second isolation structure 220 can be prepared simultaneously, simplifying the preparation process. The first isolation structure 210 and the second isolation structure 220 have the same size in the thickness direction Z, and the first isolation structure 210 is disposed on the pixel defining portion 510, and at least a portion of the second isolation structure 220 is disposed within the accommodating opening 540, so that the distance between the first isolation structure 210 and the substrate 100 in the thickness direction Z is greater than the distance between the second isolation structure 220 and the substrate 100 in the thickness direction Z, that is, the first isolation structure 210 is disposed higher than the second isolation structure 220 in the thickness direction Z, and there is a height difference between the contact positions of the first isolation structure 210 and the second isolation structure 220.

[0105] Please also refer to Figure 4 and Figure 5 , Figure 4 is a partial cross-sectional view of an array substrate in yet another embodiment; Figure 5 FIG. 4 is a partial cross-sectional view of an array substrate in yet another embodiment.

[0106] like Figure 4 and Figure 5 As shown, in some optional embodiments, the second isolation structure 220 includes a sub-layer 221 , and a dimension of the first isolation structure 210 along the thickness direction Z is greater than a dimension of the sub-layer 221 along the thickness direction Z.

[0107] In these optional embodiments, the second isolation structure 220 includes a sublayer 221, and the first isolation structure 210 includes a first layer 211 and a second layer 212, so that the second isolation structure 220 has one less film layer than the first isolation structure 210, and the distance between the surface of the first isolation structure 210 away from the substrate 100 and the substrate 100 in the thickness direction Z is greater than the distance between the surface of the second isolation structure 220 away from the substrate 100 and the substrate 100 in the thickness direction Z, that is, the first isolation structure 210 is set higher than the second isolation structure 220 in the thickness direction Z, and there is a height difference between the contact positions of the first isolation structure 210 and the second isolation structure 220.

[0108] Optionally, the sub-layer 221 and the second layer 212 are made of the same material, so that the sub-layer 221 and the second layer 212 can be prepared simultaneously, simplifying the preparation process. For example, the sub-layer 221 may be made of silicon nitride or silicon oxide.

[0109] See also Figure 6 , Figure 6 FIG. 4 is a partial cross-sectional view of an array substrate in another embodiment.

[0110] like Figure 6As shown, in some optional embodiments, the array substrate 10 also includes a first dam structure 600, which is located on the side of at least a portion of the sub-layer 221 facing away from the substrate 100, and the extension direction of the first dam structure 600 is the same as the extension direction of the corresponding second isolation structure 220, and the first dam structure 600 is in contact and connected with the first isolation structure 210.

[0111] In these optional embodiments, the first dam structure 600 has a certain isolation effect. Since the second isolation structure 220 only includes the sublayer 221, when the first dam structure 600 is provided on the side of the sublayer 221 facing away from the substrate 100, when the light-emitting layer is subsequently prepared, the positions of the light-emitting layers of different colors are different due to the lack of a precision mask. This allows the subsequent light-emitting layers to be disconnected at the first dam structure 600, thus avoiding the problem of carrier crosstalk caused by electrical connection between adjacent light-emitting units of different colors. The first dam structure 600 is in contact with the first isolation structure 210, so that the first dam structure 600 and the first isolation structure 210 are continuously arranged around the isolation opening 230. This allows the light-emitting layer to be isolated at the first dam structure 600 and the first isolation structure 210 and deposited into the corresponding isolation opening 230, forming mutually spaced light-emitting units, thereby preventing light-emitting units of different colors from being connected to each other in the area where the sublayer 221 is located.

[0112] Optionally, the cross-section of the first dam structure 600 is a regular trapezoid or an inverted trapezoid. For example, in the two isolation openings 230 on either side of the first dam structure 600, the direction from one isolation opening 230 to the other isolation opening 230 and a plane formed by a direction perpendicular to the substrate 100 serve as a reference plane, and the cross-section of the first dam structure 600 is parallel to the reference plane. The first dam structure 600 has a lower surface close to the substrate 100 and an upper surface away from the substrate 100. When the cross-section of the first dam structure 600 is a regular trapezoid, the orthographic projection of the upper surface on the substrate 100 lies within the orthographic projection of the lower surface on the substrate 100. The regular trapezoidal first dam structure 600 is relatively easy to manufacture and is therefore simple to fabricate. When the cross-section of the first dam structure 600 is an inverted trapezoid, the orthographic projection of the lower surface on the substrate 100 lies within the orthographic projection of the upper surface on the substrate 100. When fabricating the light-emitting layer, the light-emitting layer is easily disconnected at the edge of the first dam structure 600, thereby forming spaced light-emitting units.

[0113] In some optional embodiments, multiple first dam structures 600 are arranged at intervals in the direction of the isolation opening 230 pointing to the adjacent isolation opening 230. The multiple first dam structures 600 are arranged at intervals. On the one hand, the isolation effect of the light-emitting layer can be improved. On the other hand, the multiple first dam structures 600 are spaced apart to form gaps. When the etching liquid is subsequently used for wet etching, the etching liquid can be blocked by the first dam structure 600 after flowing into the gap, thereby reducing the possibility of the etching liquid flowing into the isolation opening 230 and damaging the light-emitting unit and the first electrode.

[0114] Please also refer to Figure 6 and Figure 7 , Figure 7 FIG. 4 is a partial cross-sectional view of an array substrate in another embodiment.

[0115] Optionally, in the direction from the isolation opening 230 to the adjacent isolation opening 230, there are two or four first dam structures 600. Figure 6 As shown, between two adjacent light emitting units with the same color, no first dam structure 600 is provided or two first dam structures 600 are provided, as shown in FIG. Figure 7 As shown, four first dam structures 600 are provided between two adjacent light-emitting units of different colors. This further enhances the isolation effect of the first dam structures 600 between the two adjacent light-emitting units of different colors, resulting in a more complete isolation between the two adjacent light-emitting units of different colors, reducing the possibility of carrier crosstalk. This also further reduces the possibility of etching solution flowing into the isolation opening 230 and damaging the light-emitting unit and the first electrode. The number of first dam structures 600 can also be other numbers, such as three or five.

[0116] See also Figure 8 , Figure 8 FIG. 4 is a partial cross-sectional view of an array substrate in another embodiment.

[0117] like Figure 8 As shown, in some optional embodiments, the sublayer 221 includes a second dam structure 700, that is, the second dam structure 700 is patterned in a partial area of ​​the sublayer 221; the extension direction of the second dam structure 700 is the same as the extension direction of the corresponding second isolation structure 220, and the second dam structure 700 is in contact and connected with the first isolation structure 210.

[0118] In these optional embodiments, the extension direction of the second dam structure 700 is the same as the extension direction of the corresponding second isolation structure 220, and the second dam structure 700 is in contact with the first isolation structure 210, so that the second dam structure 700 and the first isolation structure 210 are continuously arranged around the isolation opening 230. When the light-emitting layer is subsequently prepared, the light-emitting layer can be separated at the second dam structure 700 and the first isolation structure 210 and deposited into the corresponding isolation opening 230 to form mutually spaced light-emitting units, thereby avoiding the light-emitting units from being connected to each other in the area where the sub-layer 221 is located.

[0119] Optionally, the cross-section of the second dam structure 700 is a regular trapezoid or an inverted trapezoid. For example, in the two isolation openings 230 on either side of the second dam structure 700, the direction from one isolation opening 230 to the other isolation opening 230 and a plane formed by a direction perpendicular to the substrate 100 serve as a reference plane, and the cross-section of the second dam structure 700 is parallel to the reference plane. The second dam structure 700 has a lower surface close to the substrate 100 and an upper surface away from the substrate 100. When the cross-section of the second dam structure 700 is a regular trapezoid, the orthographic projection of the upper surface on the substrate 100 lies within the orthographic projection of the lower surface on the substrate 100. This makes the preparation of the regular trapezoidal second dam structure 700 relatively easy and convenient. When the cross-section of the second dam structure 700 is an inverted trapezoid, the orthographic projection of the lower surface on the substrate 100 lies within the orthographic projection of the upper surface on the substrate 100. When the light-emitting layer is prepared, the light-emitting layer is easily disconnected at the edge of the second dam structure 700, thereby forming spaced light-emitting units.

[0120] In some optional embodiments, the second layer 212 includes a conductive material or an insulating material.

[0121] Optionally, the material layer of the first layer 211 includes a metal material.

[0122] In these optional embodiments, the second layer 212 includes a conductive material, for example, a non-metallic conductive material or a metallic conductive material. When the second layer 212 is a non-metallic conductive material or an insulating material, during wet etching of the first layer 211 using an etchant, the second layer 212 is difficult to etch due to the poor etching effect of the etchant on the non-metallic conductive material or the insulating material. However, the first layer 211, which is a metallic material, is easily etched by the etchant, thereby making it easier for the first layer 211 to be recessed relative to the second layer 212.

[0123] Optionally, both the first layer 211 and the second layer 212 include metal materials, and the first layer 211 and the second layer 212 are made of different materials. The first layer 211 is wet-etched with an etchant. By configuring the etchant, the etching rate of the second layer 212 can be lower than the etching rate of the first layer 211. Since the etching rate of the first layer 211 is higher, even though the second layer 212 is etched to some extent during wet etching with the etchant, the first layer 211 is etched faster, thereby causing the first layer 211 to be recessed relative to the second layer 212.

[0124] See also Figure 9 , Figure 9 FIG. 4 is a partial cross-sectional view of an array substrate in another embodiment.

[0125] like Figure 9 As shown, in some optional embodiments, the first isolation structure 210 further includes a third layer 213 located on the side of the first layer 211 facing the substrate 100 , and the orthographic projection of the first layer 211 on the substrate 100 is located within the orthographic projection of the third layer 213 on the substrate 100 .

[0126] In these optional embodiments, to obtain the concave first layer 211, the first layer 211 has a faster etching rate than the second layer 212 and the third layer 213 during the etching process, thereby forming the concave first layer 211. Due to the faster etching rate of the first layer 211, a large amount of etching waste is easily introduced into other locations of the array substrate 10, thereby causing adverse effects. After the third layer 213 is provided, the first layer 211 can be well adhered to the third layer 213, and the generated etching waste falls on the third layer 213, making it easier to clean.

[0127] Optionally, the material of the second layer 212 is titanium (Ti) or molybdenum (Mo), silicon nitride or silicon oxide, the material of the first layer 211 is aluminum (Al) silver (Ag) or copper (Cu), and the material of the third layer 213 is titanium (Ti) or molybdenum (Mo). For example, the first isolation structure 210 is a three-layer metal composite material of Ti / Al / Ti (titanium / aluminum / titanium) or Ti / Al / Mo (titanium / aluminum / molybdenum).

[0128] See also Figure 10 , Figure 10 FIG. 4 is a partial top view of an array substrate in another embodiment.

[0129] like Figure 10 As shown, in some optional embodiments, the first isolation structure 210 extends along the first direction X, and the second isolation structure 220 extends along the second direction Y. The first direction X and the second direction Y intersect. In some specific embodiments, the first direction X and the second direction Y are perpendicular to each other.

[0130] In these optional embodiments, the first isolation structure 210 is extended along the first direction X, and the second isolation structure 220 is extended along the second direction Y, that is, the first isolation structure 210 is located on both sides of the isolation opening 230 in the second direction Y, and the second isolation structure 220 is located on both sides of the isolation opening 230 in the first direction X, so that the subsequent first electrode can be electrically connected to the first isolation structure 210 at least on both sides of the second direction Y.

[0131] In some optional embodiments, in the thickness direction Z, the difference between the distance between the surface of the first isolation structure 210 facing away from the substrate 100 and the substrate 100 and the distance between the surface of the second isolation structure 220 facing away from the substrate 100 and the substrate 100 is 0.3 μm to 3 μm, for example, 0.3 μm, 1 μm, 2 μm, 2.5 μm or 3 μm, etc.

[0132] In these optional embodiments, the difference between the distance between the surface of the first isolation structure 210 on the side facing away from the substrate 100 and the substrate 100 and the distance between the surface of the second isolation structure 220 on the side facing away from the substrate 100 and the substrate 100 is greater than or equal to 0.3 μm, so as to avoid the difference between the distance between the surface of the first isolation structure 210 on the side facing away from the substrate 100 and the substrate 100 and the distance between the surface of the second isolation structure 220 on the side facing away from the substrate 100 being too small, that is, the height difference between the first isolation structure 210 and the second isolation structure 220 is too small, resulting in poor filling or no filling of the organic packaging material, and the problem of glue exploding between the holes and the outside world due to the excessive internal and external pressure difference when the external air pressure changes. The difference between the distance between the surface of the first isolation structure 210 on the side facing away from the substrate 100 and the substrate 100 and the distance between the surface of the second isolation structure 220 on the side facing away from the substrate 100 and the substrate 100 is less than or equal to 3 μm, so as to avoid the difference between the distance between the surface of the first isolation structure 210 on the side facing away from the substrate 100 and the substrate 100 and the distance between the surface of the second isolation structure 220 on the side facing away from the substrate 100 being too large, that is, the height difference between the first isolation structure 210 and the second isolation structure 220 is too large, and the first isolation structure 210 needs to have an excessively large size in the thickness direction Z, resulting in the first isolation structure 210 being too high, causing the array substrate 10 to be too thick.

[0133] Please also refer to Figures 11 to 13 , Figure 11 is a partial cross-sectional view of an array substrate in yet another embodiment; Figure 12 is a partial cross-sectional view of an array substrate in yet another embodiment; Figure 13 FIG. 4 is a partial top view of an array substrate in another embodiment.

[0134] like Figures 11 to 13As shown, an embodiment of the second aspect of the present application provides an array substrate 10, the array substrate 10 includes a substrate 100, a pixel definition layer 500 and an isolation structure 200; the pixel definition layer 500 is located on one side of the substrate 100, the pixel definition layer 500 includes a pixel defining portion 510 and a pixel opening 520 formed by the pixel defining portion 510; the isolation structure 200 is located on the side of the pixel defining portion 510 away from the substrate 100, the isolation structure 200 includes a first isolation structure 210 located on both sides of the pixel opening 520 in a first direction X and arranged opposite to each other, the first isolation structure 210 includes a first layer 211 and a second layer 212, the second layer 212 is located on the side of the first layer 211 away from the substrate 100, and the orthographic projection of the first layer 211 on the substrate 100 is located within the orthographic projection of the second layer 212 on the substrate 100.

[0135] According to the array substrate 10 of the embodiment of the present application, the array substrate 10 includes a substrate 100 and an isolation structure 200. The isolation structure 200 includes a first isolation structure 210 that is oppositely arranged on both sides of the pixel opening 520 in the first direction X. The distance between the first isolation structure 210 and the substrate 100 in the thickness direction Z is greater than the distance between the pixel defining portion 510 and the substrate 100 in the thickness direction Z, that is, the first isolation structure 210 is higher than the pixel defining portion 510 in the thickness direction Z. There is a height difference between the first isolation structure 210 and the pixel defining portion 510. When the organic encapsulation material is subsequently prepared, a hole will be formed between the organic encapsulation material and the isolation structure 200. Due to the height difference between the first isolation structure 210 and the pixel defining portion 510, the hole is exposed at the disconnection position of the first isolation structure 210 and can be filled with the organic encapsulation material, thereby improving the problem of glue explosion caused by the excessive internal and external pressure difference between the hole and the outside world when the external air pressure changes when the hole exists and is completely sealed by the organic encapsulation material. Wherein, the first direction X is a direction perpendicular to the thickness direction Z, for example Figure 13 Horizontal in.

[0136] like Figure 11 and Figure 13 As shown, in some optional embodiments, the pixel definition layer 500 also includes a third dam structure 800, a groove 550 is opened in part of the pixel defining portion 510, and the third dam structure 800 is located in the groove 550, that is, the pixel definition layer 500 is patterned to form the third dam structure 800 located in the groove 550.

[0137] In these optional embodiments, the third dam structure 800 has a certain barrier effect. After the third dam structure 800 is provided, the light-emitting layer can be disconnected at the third dam structure 800 during subsequent fabrication of the light-emitting layer, thereby preventing the problem of carrier crosstalk caused by electrical connection between adjacent light-emitting units of different colors. The third dam structure 800 is located within the groove 550, that is, the third dam structure 800 is part of the pixel-defining portion 510. The third dam structure 800 can be fabricated simultaneously with the pixel-defining portion 510, simplifying the fabrication process.

[0138] Optionally, the orthographic projection of the third dam structure 800 on the substrate 100 and the orthographic projection of the first isolation structure 210 on the substrate 100 are continuously arranged, so that the third dam structure 800 and the first isolation structure 210 are continuously arranged around the pixel opening 520, and the orthographic projection of the pixel opening 520 on the substrate 100 is located in the area enclosed by the orthographic projection of the third dam structure 800 on the substrate 100 and the orthographic projection of the first isolation structure 210 on the substrate 100, so that the light-emitting layer is disconnected at the third dam structure 800 and the first isolation structure 210 and deposited into the pixel opening 520, forming light-emitting units spaced apart from each other, thereby avoiding the light-emitting units from being connected to each other in the area where the first isolation structure 210 is not present.

[0139] See also Figure 14 , Figure 14 This is a partial cross-sectional view of a display panel provided in an embodiment of the present application.

[0140] like Figure 14 As shown, the embodiment of the third aspect of the present application further provides a display panel 20, comprising the array substrate 10 of any of the aforementioned embodiments. Since the display panel 20 provided in the embodiment of the third aspect of the present application comprises the array substrate 10 of any of the aforementioned embodiments, the display panel 20 provided in the embodiment of the third aspect of the present application has the beneficial effects of the array substrate 10 of any of the aforementioned embodiments, which will not be further elaborated here.

[0141] Optionally, the display panel 20 further includes a light-emitting layer 300 and a first electrode layer 400. The light-emitting layer 300 is located on one side of the array substrate 10 and includes light-emitting units 310 spaced apart from each other. The light-emitting units 310 are used to achieve light-emitting display of the display panel 20. The first electrode layer 400 is located on a side of the light-emitting layer 300 facing away from the substrate 100. The first electrode layer 400 includes a first electrode 410 covering the light-emitting unit 310. The first electrode 410 is electrically connected to the first isolation structure 210. The first electrodes 410 are electrically connected to each other through the first isolation structure 210 and are used for signal transmission.

[0142] In some optional embodiments, the orthographic projection of each light-emitting unit 310 on the substrate 100 is located within the orthographic projection of each first electrode 410 on the substrate 100 .

[0143] In these optional embodiments, the orthographic projection of the light-emitting unit 310 on the substrate 100 is located within the orthographic projection of the first electrode 410 on the substrate 100, that is, the first electrode 410 is arranged to cover the light-emitting unit 310 to serve as the electrode of the light-emitting unit 310, thereby ensuring the normal light emission of the light-emitting unit 310 and improving the display effect of the array substrate 10.

[0144] Optionally, the light emitting unit 310 is spaced apart from the isolation structure 200. The light emitting layer 300 and the isolation structure 200 are spaced apart, that is, the light emitting units 310 are spaced apart from each other, which reduces the crosstalk of carriers between the light emitting units 310 and improves the cross-color problem of the light emitting units 310.

[0145] In some optional embodiments, the display panel 20 further includes a first encapsulation layer, and the first encapsulation layer is located on a side of the light emitting unit 310 facing away from the substrate 100 .

[0146] In these optional embodiments, the first encapsulation layer is disposed on the side of the first electrode layer facing away from the substrate 100 to encapsulate the first electrode layer and the light-emitting layer 300 , thereby reducing the possibility of water and oxygen intrusion and improving the service life of the display panel 20 .

[0147] Optionally, the first encapsulation layer includes an inorganic material, which has good density and good barrier properties against water vapor and oxygen.

[0148] In some optional embodiments, the display panel 20 further includes a second encapsulation layer, where the second encapsulation layer is located on a side of the first encapsulation layer facing away from the substrate 100 .

[0149] In these optional embodiments, a first encapsulation layer and a second encapsulation layer are used to perform multi-layer encapsulation to further improve the encapsulation performance of the display panel 20 .

[0150] Optionally, the second encapsulation layer includes an organic material. The second encapsulation layer is encapsulated with the organic material to further improve the encapsulation performance of the display panel 20. At the same time, the second encapsulation layer can fill the holes to improve the glue explosion problem.

[0151] Optionally, the display panel 20 further includes a third encapsulation layer, which is located on the side of the second encapsulation layer facing away from the substrate 100 . The three-layer encapsulation has better encapsulation performance and reduces the possibility of water and oxygen intrusion.

[0152] Optionally, the third encapsulation layer includes an inorganic material, and the first encapsulation layer, the second encapsulation layer and the third encapsulation layer are encapsulated with an inorganic material, an organic material and an inorganic material respectively to form a TFE (Thin Film Encapsulation, TFE) thin film encapsulation structure, further improving the encapsulation performance of the display panel 20.

[0153] Optionally, the light emitting layer 300 includes an electron injection layer (EIL), an electron transport layer (ETL), a light emitting material layer, a hole injection layer (HIL) and a hole transport layer (HTL).

[0154] The structural design in this embodiment can be applied to other display panels 20 , and the specific selection can be made based on actual conditions. This application does not impose any specific restrictions on it.

[0155] The fourth aspect of the present application also provides a display device, including the display panel 20 of any of the above-mentioned embodiments. Since the display device provided by the fourth aspect of the present application includes the display panel 20 of any of the above-mentioned embodiments, the display device provided by the fourth aspect of the present application has the beneficial effects of the display panel 20 of any of the above-mentioned embodiments, which will not be further described here.

[0156] The display device in the embodiments of the present application includes but is not limited to mobile phones, personal digital assistants (PDAs), tablet computers, e-books, televisions, access control systems, smart landline phones, consoles, and other devices with display functions.

[0157] The fifth embodiment of the present application further provides a method for preparing an array substrate 10. The array substrate 10 may be the array substrate 10 provided in any of the above embodiments. Figures 1 to 14 , and see Figure 15 , Figure 15 : This is a schematic flow chart of a method for preparing an array substrate provided in an embodiment of the present application. The preparation method includes:

[0158] Step S01: preparing a substrate.

[0159] Step S02: Prepare an isolation structure on one side of the substrate, the isolation structure encloses an isolation opening, the isolation structure includes a first isolation structure and a second isolation structure, the distance between the surface of the first isolation structure on the side facing away from the substrate and the substrate in the thickness direction is greater than the distance between the surface of the second isolation structure on the side facing away from the substrate and the substrate in the thickness direction, the second isolation structure is located on at least one side of the isolation opening, the first isolation structure includes a first layer and a second layer, the second layer is located on the side of the first layer facing away from the substrate, and the orthographic projection of the first layer on the substrate is located within the orthographic projection of the second layer on the substrate.

[0160] According to the preparation method of the embodiment of the third aspect of the present application, a substrate 100 is prepared by step S01. An isolation structure 200 is prepared by step S02. The isolation structure 200 is arranged on the substrate 100 and encloses a plurality of isolation openings 230. When the light-emitting layer is subsequently prepared, the light-emitting layer is separated to form mutually disconnected light-emitting units, thereby reducing the crosstalk of carriers in the light-emitting layer and improving the display effect of the array substrate 10. In addition, the light-emitting units do not need to use a precision mask plate, which can reduce the development and use of precision masks and reduce the preparation cost. When the first electrode layer is subsequently prepared, the isolation structure 200 separates the first electrode layer to form mutually spaced first electrodes. The mutually spaced first electrodes can at least be electrically connected through the first isolation structure 210 for signal transmission to ensure the normal light emission of the light-emitting unit. The isolation structure 200 includes a first isolation structure 210 and a second isolation structure 220. The distance between the first isolation structure 210 and the substrate 100 in the thickness direction Z is greater than the distance between the second isolation structure 220 and the substrate 100 in the thickness direction Z. That is, the first isolation structure 210 is arranged higher than the second isolation structure 220 in the thickness direction Z. There is a height difference between the contact points of the first isolation structure 210 and the second isolation structure 220. When the organic encapsulation material is subsequently prepared, a hole will form between the organic encapsulation material and the isolation structure 200. Due to the height difference between the contact points of the first isolation structure 210 and the second isolation structure 220, the hole is exposed at the contact point of the first isolation structure 210 and the second isolation structure 220 and can be filled with the organic encapsulation material. This improves the problem of glue explosion caused by the excessive pressure difference between the hole and the outside world when the external air pressure changes when the hole exists and is completely sealed by the organic encapsulation material.

[0161] In some optional embodiments, in step S02, the method further includes:

[0162] preparing a first material layer on one side of the substrate;

[0163] A second material layer is prepared on the side of the first material layer facing away from the substrate, and the first material layer and the second material layer are patterned to obtain a first layer and a second layer located on the side of the first layer facing away from the substrate, the orthographic projection of the first layer on the substrate is located within the orthographic projection of the second layer on the substrate, and the first layer and the second layer are stacked to form a first isolation structure and a second isolation structure.

[0164] In these optional embodiments, a first material layer and a second material layer are sequentially formed on a substrate 100, and the first and second material layers are patterned to obtain a first layer 211 and a second layer 212. For example, the first and second material layers are first dry-etched, and then the first material layer is wet-etched, so that the orthographic projection of the first layer 211 on the substrate 100 is located within the orthographic projection of the second layer 212 on the substrate 100, that is, the first layer 211 is recessed relative to the second layer 212. The first and second layers 211, 212 are stacked to form a first isolation structure 210 and a second isolation structure 220. The first and second isolation structures 210 and 220 are identical and are prepared simultaneously, simplifying the preparation process.

[0165] Optionally, before the step of preparing the first material layer on one side of the substrate, the method further includes:

[0166] A pixel definition material layer is prepared on one side of the substrate, and an accommodating opening is opened on the pixel definition material layer; in the step of preparing an isolation structure on one side of the substrate, the formed second isolation structure is located in the accommodating opening.

[0167] In these optional embodiments, at least a portion of the second isolation structure 220 is disposed within the accommodating opening 540, so that the distance between the first isolation structure 210 and the substrate 100 in the thickness direction Z is greater than the distance between the second isolation structure 220 and the substrate 100 in the thickness direction Z, that is, the first isolation structure 210 is higher than the second isolation structure 220 in the thickness direction Z, and there is a height difference between the contact positions of the first isolation structure 210 and the second isolation structure 220.

[0168] In some optional embodiments, in step S02, the method further includes:

[0169] A first material layer is prepared on one side of the substrate, and the first material layer is patterned to obtain a first intermediate layer;

[0170] Preparing a second material layer on a side of the first intermediate layer facing away from the substrate, and patterning the second material layer to obtain a second layer located on a side of the first intermediate layer facing away from the substrate and a sublayer located on a side of the substrate, wherein the sublayer forms a second isolation structure;

[0171] The first intermediate layer is patterned to obtain a first layer, wherein the orthographic projection of the first layer on the substrate is located within the orthographic projection of the second layer on the substrate, and the first layer and the second layer are stacked to form a first isolation structure.

[0172] In these optional embodiments, a first material layer is first prepared on substrate 100 and patterned to obtain a first intermediate layer. That is, the first material layer is etched to retain the first material layer in the region of first isolation structure 210, i.e., the first intermediate layer. A second material layer is then prepared and patterned. That is, the second material layer is patterned to retain the second material layer in the regions of first isolation structure 210 and second isolation structure 220, i.e., the second layer 212 and sublayer 221 are formed. Sublayer 221 forms second isolation structure 220. Finally, the first intermediate layer is wet-etched to form first layer 211. First layer 211 and second layer 212 are stacked to form first isolation structure 210. Second layer 212 of first isolation structure 210 and sublayer 221 of second isolation structure 220 are prepared simultaneously, simplifying the preparation process.

[0173] The sixth embodiment of the present application further provides a method for preparing an array substrate 10. The array substrate 10 may be the array substrate 10 provided in any of the above embodiments. Figures 1 to 14 , and see Figure 16 , Figure 16 FIG1 is a flow chart of a method for preparing an array substrate provided in another embodiment of the present application. The method comprises:

[0174] Step S1: preparing a pixel definition material layer on one side of a substrate, and patterning the pixel definition material layer to obtain a pixel definition layer, wherein the pixel definition layer includes a pixel definition portion and a pixel opening formed by the pixel definition portion.

[0175] Step S2: preparing a first material layer on the side of the pixel definition material layer facing away from the substrate.

[0176] Step S3: Prepare a second material layer on the side of the first material layer facing away from the substrate, and pattern the first material layer and the second material layer to obtain a first layer and a second layer located on the side of the first layer facing away from the substrate, the orthographic projection of the first layer on the substrate is located within the orthographic projection of the second layer on the substrate, and the first layer and the second layer are stacked to form a first isolation structure; the first isolation structure is located on two opposite sides of the pixel opening.

[0177] According to the preparation method of the embodiment of the third aspect of the present application, a pixel definition layer 500 is prepared by step S01. A first material layer is prepared by step S02. A second material layer is prepared by step S03, and the first material layer and the second material layer are patterned to obtain a first layer 211 and a second layer 212 located on the side of the first layer 211 facing away from the substrate 100. The first layer 211 and the second layer 212 are stacked to form a first isolation structure 210. The isolation structure 200 includes a first isolation structure 210 located on both sides of the pixel opening 520 in the first direction X and arranged opposite each other. The distance between the first isolation structure 210 and the substrate 100 in the thickness direction Z is greater than the distance between the pixel defining portion 510 and the substrate 100 in the thickness direction Z, that is, the first isolation structure 210 is arranged higher than the pixel defining portion 510 in the thickness direction Z, and there is a height difference between the first isolation structure 210 and the pixel defining portion 510. When the organic encapsulation material is subsequently prepared, air between the organic encapsulation material and the isolation structure 200 forms a hole sealed by the organic encapsulation material. Due to the height difference between the first isolation structure 210 and the pixel defining portion 510, the hole is exposed at the disconnection point of the first isolation structure 210 and can be filled with the organic encapsulation material. This alleviates the problem of glue explosion caused by the large pressure difference between the hole and the outside world when the external air pressure changes when the hole exists and is completely sealed by the organic encapsulation material. The step of patterning the pixel definition material layer can also be performed after step S3, that is, the formation of the pixel opening 520 can be before or after step S03.

[0178] While the embodiments described above are not exhaustive, they do not limit the invention to the specific embodiments described. Clearly, numerous modifications and variations are possible based on the above description. These embodiments are selected and described in detail in this specification to better explain the principles and practical applications of the present invention, thereby enabling those skilled in the art to better utilize the present invention and its modifications. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. An array substrate, characterized in that: include: substrate; An isolation structure is located on one side of the substrate, and the isolation structure encloses an isolation opening. The isolation structure includes a first isolation structure and a second isolation structure. The distance between the surface of the first isolation structure facing away from the substrate and the substrate in the thickness direction is greater than the distance between the surface of the second isolation structure facing away from the substrate and the substrate in the thickness direction. The second isolation structure is located on at least one side of the isolation opening. The first isolation structure includes a first layer and a second layer. The second layer is located on the side of the first layer facing away from the substrate, and the orthographic projection of the first layer on the substrate is within the orthographic projection of the second layer on the substrate.

2. The array substrate according to claim 1, wherein: The second isolation structure has the same structure as the first isolation structure.

3. The array substrate according to claim 1, wherein: The array substrate further includes: a pixel definition layer located on one side of the substrate, the pixel definition layer comprising a pixel defining portion and a pixel opening enclosed by the pixel defining portion, the pixel opening being in communication with the isolation opening, and the isolation structure being located on a side of the pixel defining portion facing away from the substrate; Preferably, the array substrate further includes a pixel electrode, which is located on a side of the pixel definition layer facing the substrate, and an orthographic projection of the pixel electrode on the substrate at least partially overlaps with an orthographic projection of the pixel opening on the substrate.

4. The array substrate according to claim 3, wherein: The pixel defining portion is provided with an accommodating opening. The first isolation structure is located on a side of the pixel defining portion facing away from the substrate. The second isolation structure is located in the accommodating opening.

5. The array substrate according to claim 1, wherein: The second isolation structure includes a sublayer, and a size of the first isolation structure along the thickness direction is larger than a size of the sublayer along the thickness direction; Preferably, the sub-layer and the second layer are made of the same material.

6. The array substrate according to claim 5, wherein: The array substrate further includes: a first dam structure, located on a side of at least a portion of the sub-layer facing away from the substrate, wherein an extension direction of the first dam structure is the same as an extension direction of the corresponding second isolation structure, and the first dam structure is in contact with and connected to the first isolation structure; Preferably, the cross-section of the first dam structure is a regular trapezoid or an inverted trapezoid.

7. The array substrate according to claim 6, wherein: In a direction from the isolation opening to the adjacent isolation opening, a plurality of the first dam structures are arranged at intervals.

8. The array substrate according to claim 7, wherein: In the direction from the isolation opening to the adjacent isolation opening, there are two or four first dam structures.

9. The array substrate according to claim 5, wherein: The sublayer includes a second dam structure, wherein an extension direction of the second dam structure is the same as an extension direction of the corresponding second isolation structure, and the second dam structure is in contact with and connected to the first isolation structure; Preferably, the cross section of the second dam structure is a regular trapezoid or an inverted trapezoid; Preferably, the sub-layer and the second layer are made of the same material.

10. The array substrate according to claim 1, wherein: The second layer includes a conductive material or an insulating material; Preferably, the first layer and the second layer both comprise metal materials, and the materials of the first layer and the second layer are different; Preferably, the first isolation structure further comprises a third layer located on a side of the first layer facing the substrate, and an orthographic projection of the first layer on the substrate is located within an orthographic projection of the third layer on the substrate; Preferably, the material of the first layer includes aluminum, silver or copper; Preferably, the material of the second layer includes titanium or molybdenum; Preferably, the material of the third layer includes titanium or molybdenum.

11. The array substrate according to claim 1, wherein: The first isolation structure is extended along a first direction, the second isolation structure is extended along a second direction, and the first direction and the second direction intersect; Preferably, the first isolation structure is located on both sides of the isolation opening in the second direction, and the second isolation structure is located on both sides of the isolation opening in the first direction.

12. The array substrate according to claim 1, wherein: In the thickness direction, a difference between a distance between a surface of the first isolation structure facing away from the substrate and the substrate and a distance between a surface of the second isolation structure facing away from the substrate and the substrate is 0.3 μm to 3 μm.

13. An array substrate, characterized in that: include: substrate; a pixel definition layer, located on one side of the substrate, the pixel definition layer comprising a pixel defining portion and a pixel opening enclosed by the pixel defining portion; An isolation structure is located on the side of the pixel defining portion facing away from the substrate, the isolation structure includes a first isolation structure located on both sides of the pixel opening in a first direction and arranged opposite to each other, the first isolation structure includes a first layer and a second layer, the second layer is located on the side of the first layer facing away from the substrate, and the orthographic projection of the first layer on the substrate is located within the orthographic projection of the second layer on the substrate.

14. The array substrate according to claim 13, wherein: The pixel definition layer further includes a third dam structure, a portion of the pixel definition portion is provided with a groove, and the third dam structure is located in the groove; Preferably, the orthographic projection of the pixel opening on the substrate is located in a region enclosed by the orthographic projection of the third dam structure on the substrate and the orthographic projection of the first isolation structure on the substrate.

15. A display panel, characterized in that: The invention comprises the array substrate according to any one of claims 1 to 14.

16. The display panel according to claim 15, wherein: include: a light-emitting layer, located on one side of the array substrate, the light-emitting layer comprising light-emitting units spaced apart from each other; a first electrode layer, located on a side of the light-emitting layer facing away from the substrate, the first electrode layer comprising a first electrode covering the light-emitting unit, the first electrode being electrically connected to the first isolation structure; Preferably, the display panel further includes: a first encapsulation layer, located on a side of the first electrode layer facing away from the substrate; Preferably, the material of the first encapsulation layer includes an inorganic material; Preferably, the display panel further includes: a second encapsulation layer, located on a side of the first encapsulation layer facing away from the substrate; Preferably, the material of the second encapsulation layer includes organic material; Preferably, the display panel further includes: a third encapsulation layer, located on a side of the second encapsulation layer facing away from the substrate; Preferably, the material of the third encapsulation layer includes inorganic material.

17. A display device, characterized in that: Including the display panel according to claim 15 or 16.

18. A method for preparing an array substrate, characterized in that: The method comprises: preparing a substrate; An isolation structure is prepared on one side of the substrate, the isolation structure enclosing an isolation opening, the isolation structure comprising a first isolation structure and a second isolation structure, the distance between a surface of the first isolation structure on a side facing away from the substrate and the substrate in a thickness direction being greater than the distance between a surface of the second isolation structure on a side facing away from the substrate and the substrate in the thickness direction, the second isolation structure being located on at least one side of the isolation opening, the first isolation structure comprising a first layer and a second layer, the second layer being located on a side of the first layer facing away from the substrate, and the orthographic projection of the first layer on the substrate being located within the orthographic projection of the second layer on the substrate.

19. The preparation method according to claim 18, characterized in that In the step of preparing an isolation structure on one side of the substrate, the method further comprises: preparing a first material layer on one side of the substrate; Preparing a second material layer on a side of the first material layer facing away from the substrate, and patterning the first material layer and the second material layer to obtain a first layer and a second layer located on a side of the first layer facing away from the substrate, wherein the orthographic projection of the first layer on the substrate is located within the orthographic projection of the second layer on the substrate, and the first layer and the second layer are stacked to form a first isolation structure and a second isolation structure; Before the step of preparing the first material layer on one side of the substrate, the method further includes: A pixel definition material layer is prepared on one side of the substrate, and a receiving opening is opened on the pixel definition material layer; in the step of preparing the isolation structure on one side of the substrate, the second isolation structure is formed to be located in the receiving opening; Alternatively, in the step of preparing the isolation structure on one side of the substrate, the method further comprises: preparing a first material layer on one side of the substrate, and patterning the first material layer to obtain a first intermediate layer; preparing a second material layer on a side of the first intermediate layer facing away from the substrate, and patterning the second material layer to obtain a second layer located on a side of the first intermediate layer facing away from the substrate and a sublayer located on a side of the substrate, wherein the sublayer forms the second isolation structure; The first intermediate layer is patterned to obtain a first layer, wherein the orthographic projection of the first layer on the substrate is located within the orthographic projection of the second layer on the substrate, and the first layer and the second layer are stacked to form the first isolation structure.

20. A method for preparing an array substrate, characterized in that: The method comprises: A pixel definition material layer is prepared on one side of a substrate, and the pixel definition material layer is patterned to obtain a pixel definition layer, wherein the pixel definition layer includes a pixel definition portion and a pixel opening formed by the pixel definition portion; preparing a first material layer on a side of the pixel definition material layer facing away from the substrate; A second material layer is prepared on the side of the first material layer facing away from the substrate, and the first material layer and the second material layer are patterned to obtain a first layer and a second layer located on the side of the first layer facing away from the substrate, the orthographic projection of the first layer on the substrate is located within the orthographic projection of the second layer on the substrate, and the first layer and the second layer are stacked to form a first isolation structure; the first isolation structure is located on two opposite sides of the pixel opening.

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