High-speed electronic switch for Ethernet electrical port bypass

By designing a high-speed electronic switch for Ethernet electrical port bypass, using a depletion-type NMOS tube and a high-frequency isolation circuit, the problems of low integration, large size, high power consumption, slow response speed and insufficient high-frequency signal isolation in the existing technology are solved. High bandwidth, low loss, low power consumption and high isolation are achieved, and it is compatible with a variety of high-speed communication interfaces.

CN120768331APending Publication Date: 2025-10-10SHANGHAI RONGSHI COMMUNICATION TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202510841907.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-06-23
Publication Date
2025-10-10

AI Technical Summary

Technical Problem

Existing technologies in network communications have problems such as low integration, large size, high power consumption, slow response speed, insufficient bandwidth, inability to maintain communication paths during power outages, and insufficient high-frequency signal isolation, making it difficult to meet high-speed communication requirements.

Method used

A high-speed signal switching circuit is designed using a depletion-mode NMOS transistor as the main switching device, combined with a high-frequency isolation circuit and a negative voltage generation circuit. This ensures automatic switching to the bypass path when power is lost. It supports high bandwidth, low loss, low power consumption, and high isolation, and is suitable for high-speed communication scenarios such as Ethernet, HDMI, and USB.

Benefits of technology

It achieves high bandwidth and low loss, with a power-off self-recovery delay of less than 10μs, high-frequency isolation increased to -40dB@1GHz, power consumption reduced to 1/10 of traditional relays, volume reduced by 50%, and adaptable to a variety of high-speed communication interfaces.

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Abstract

The invention discloses a high-speed electronic switch for an Ethernet electrical port bypass, and the electronic switch comprises a high-speed signal switching circuit which is used for switching a high-speed signal path; the high-speed signal high-frequency isolation circuit is used for improving the isolation degree of high-frequency signals; the negative voltage generation circuit is used for generating a negative voltage required for controlling the switching tube; the gating signal control module is used for converting an external logic signal into an analog control signal; the switching circuit automatically conducts a bypass path during power failure, the signal bandwidth is not lower than 1GHz, and the switching circuit is suitable for Ethernet, HDMI or USB high-speed communication scenes. The bypass circuit is used for realizing an Ethernet electrical port bypass function, can be automatically switched to a bypass path when a node is powered off or has a fault, ensures high reliability and continuity of a network link, and is adaptive to high-speed communication scenes such as Ethernet (1Gbps and above), HDMI (high-definition multimedia interface) (supporting 4K and 60Hz), USB 3.0 and the like.
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Description

Technical Field

[0001] The present invention relates to the technical field of network communication equipment, and in particular to a high-speed electronic switch for Ethernet electrical port bypass. Background Art

[0002] With the increasing demand for network security, network redundancy design has become critical, especially in core links in the financial and power sectors, where it is necessary to ensure that services are not interrupted when a node fails. Existing technologies mainly rely on the following solutions: The relay solution is based on electromagnetically controlled devices (such as patent CN220359181U): it switches paths through electromagnetic control, but has defects such as low integration, large size, high power consumption, and slow response speed (ms level), making it difficult to meet high-speed communication requirements.

[0003] Analog electronic switches: Switching is based on logic control, but they cannot maintain the path during power outages, resulting in the risk of link interruption.

[0004] Audio electronic switches: Although they support power-down paths, they have insufficient bandwidth (typically less than 100MHz) and cannot adapt to high-speed scenarios such as Ethernet and HDMI.

[0005] In addition, existing electronic switches have deficiencies in high-frequency signal isolation and are prone to crosstalk due to parasitic capacitance when in the off state (typical isolation is only -20dB@1GHz).

[0006] Therefore, we propose a high-speed electronic switch for Ethernet electrical port bypass to solve the above problems. Summary of the Invention

[0007] The purpose of the present invention is to address the shortcomings of the existing technology and propose a high-speed electronic switch for Ethernet electrical port bypass, which is used to implement the Ethernet electrical port bypass function; the circuit can automatically switch to the bypass path when the node loses power or fails, ensuring the high reliability and continuity of the network link, and is suitable for high-speed communication scenarios such as Ethernet (1Gbps and above), HDMI (supporting 4K@60Hz), and USB 3.0.

[0008] In order to achieve the above object, the present invention adopts the following technical solutions: A high-speed electronic switch for Ethernet electrical port bypass includes: a high-speed signal switching circuit for switching a high-speed signal path; High-speed signal high-frequency isolation circuit, used to improve the isolation of high-frequency signals; A negative voltage generating circuit is used to generate the negative voltage required to control the switch tube; A strobe signal control module, used for converting an external logic signal into an analog control signal; The switch circuit automatically opens the bypass path when power is off, and the signal bandwidth is not less than 1GHz, which is suitable for Ethernet, HDMI or USB high-speed communication scenarios.

[0009] Preferably, the high-speed signal switching circuit uses a depletion-type NMOS tube as the main switching device; when the control voltage is greater than the negative switching voltage, the path is disconnected; when the control voltage is lower than the negative switching voltage or the power is off, the gate voltage is pulled to 0V through the pull-down resistor, forcing the bypass path to be turned on.

[0010] Preferably, the high-speed signal high-frequency isolation circuit includes an auxiliary MOS transistor and a grounding resistor network; when the main switch is disconnected, the auxiliary MOS transistor is connected to the ground, attenuating the high-frequency crosstalk signal to below -40dB @1GHz.

[0011] Preferably, the negative voltage generating circuit is a charge pump circuit, comprising a diode, a capacitor and an oscillator, which converts the input positive voltage into a double negative voltage output through periodic charging and discharging.

[0012] Preferably, the strobe signal control module is composed of a MOS tube and a pull-down resistor; when power is off, it outputs a high-resistance state and forces the main switch to be turned on through the pull-down resistor.

[0013] Preferably, the switch circuit supports multi-channel signal combination configuration, including a 1:N or N:M switch path structure, which is achieved by connecting multiple groups of depletion-type NMOS tubes in parallel.

[0014] Preferably, the auxiliary MOS tube in the high-frequency isolation circuit operates synchronously with the main switch; when the main switch is turned on, the auxiliary MOS tube is turned off, and when the main switch is turned off, the auxiliary MOS tube is connected to the ground.

[0015] Preferably, the charge pump circuit outputs -10V when the input is +5V, or outputs -6.6V when the input is +3.3V, adapting to different power supply scenarios.

[0016] Preferably, the bypass delay of the switch circuit is less than 10 μs when the power is off, meeting the IEEE802.3 standard.

[0017] Preferably, the on-resistance of the high-speed signal switching circuit is less than 1Ω, and supports 4K@60Hz video signal transmission or USB 3.0 super-speed mode.

[0018] Compared with the prior art, the present invention has the following beneficial effects: 1. High bandwidth and low loss: The depletion-mode NMOS has a low on-resistance (<1Ω) and a signal bandwidth extending to over 1.2GHz, making it suitable for high-speed communication scenarios.

[0019] 2. Power-off self-recovery: Bypass switching delay is less than 10μs, ensuring business continuity and meeting strict network standards.

[0020] 3. High isolation: The high-frequency isolation circuit attenuates the crosstalk signal in the disconnected state to -40dB@1GHz (up to -60dB in the embodiment).

[0021] 4. Low power consumption and miniaturization: CMOS process has high integration, power consumption is only 1 / 10 of traditional relays, and the volume is reduced by more than 50%.

[0022] 5. Multi-scenario adaptability: By adjusting the charge pump input voltage (such as +3.3V or +5V) and switch combination configuration, it is compatible with different interface requirements such as Ethernet, HDMI, and USB. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 This is a circuit diagram of a high-speed electronic switch for Ethernet electrical port bypass proposed by the present invention; Figure 2 This is a circuit diagram of multiple groups of main switch MOS tubes in a high-speed electronic switch for Ethernet electrical port bypass proposed by the present invention; Figure 3 This is a circuit diagram of a high-frequency isolation circuit in a high-speed electronic switch for Ethernet electrical port bypass proposed by the present invention; Figure 4 The present invention provides a circuit diagram of a strobe signal control circuit in a high-speed electronic switch for Ethernet electrical port bypass. DETAILED DESCRIPTION

[0024] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0025] A high-speed electronic switch for Ethernet electrical port bypass, comprising: A high-speed signal switching circuit for switching high-speed signal paths; High-speed signal high-frequency isolation circuit for improving the isolation of high-frequency signals; A negative voltage generating circuit for generating a negative voltage required to control the switch tube; A strobe signal control module used to convert external logic signals into analog control signals.

[0026] The high-speed signal switching circuit uses a depletion-type NMOS tube as the main switch device, and uses its negative voltage control characteristics to achieve on-off. During normal operation: the negative voltage generation circuit outputs a control voltage (such as -10V), which is applied to the NMOS gate to turn it off, and the signal is switched by external logic control; Power down: Negative voltage circuit stops working, pull-down resistor forces gate voltage to 0V, NMOS automatically conducts, bypass path switches seamlessly; Conduction resistance <1Ω, signal bandwidth ≥1GHz, supports 4K@60Hz video or USB 3.0 super-speed mode transmission.

[0027] High-speed signal high-frequency isolation circuit composed of auxiliary MOS tube and ground resistance network, synchronous action with main switch; Main switch on: auxiliary MOS tube off, avoid affecting signal transmission; Main switch off: auxiliary MOS tube conducts to ground, high-frequency crosstalk signals are guided to ground through resistance network, isolation degree is improved to -40dB@1GHz above.

[0028] Negative voltage generation circuit is designed based on charge pump principle, including oscillator, diode and capacitor, which can convert input positive voltage to double negative voltage output (such as +5V→-10V, +3.3V→-6.6V); Power down: charge pump stops working, NMOS gate voltage is zero, ensuring the forced conduction of bypass path.

[0029] Gating signal control module consists of MOS tube and pull-down resistor to form a level conversion circuit, which converts external logic signals (such as TTL level) into negative voltage control signals; Power down: module output high resistance state, forced main switch conduction through pull-down resistor, bypass delay <10μs, meet IEEE 802.3 standard.

[0030] Multiple signal configuration expansion supports 1:N or N:M switch path combination through multiple groups of depletion mode NMOS tubes in parallel, such as 1:4 HDMI signal switch, which adapts to multi-port redundancy requirements.

[0031] Single-path Ethernet bypass switch: main switch uses depletion mode NMOS tube, bandwidth 1.2GHz; power down bypass delay <10μs, meet IEEE 802.3af standard; high-frequency isolation circuit isolation degree reaches -45dB@1GHz.

[0032] Multi-path HDMI signal switch: 1:4 switch combination supports 4K@60Hz video transmission; charge pump input +5V, output -10V control voltage; high-frequency crosstalk attenuation to -35dB@3GHz.

[0033] USB 3.0 redundancy switching module: integrated charge pump circuit, input +3.3V generates -6.6V control voltage; gating signal response time <5ns, adapts to USB 3.0 super-speed mode (5Gbps).

[0034] Main switch circuit is composed of Figure 1 The depletion-mode MOS transistor shown in the figure is disconnected when a negative voltage is applied, preventing the signal from flowing from the input to the output. When power is lost or the negative voltage is removed, resistor R maintains the MOS transistor's G and S terminals at 0, turning the MOS transistor on and allowing the signal to flow from the input to the output. (This is the main difference from current mainstream high-speed MOS electronic switches.) like Figure 2 The combination of multiple groups of main switch MOS tubes can form a 1:N or N:M switch path combination.

[0035] High frequency isolation circuits, such as Figure 3 The circuit shown is composed of MOS3, R3, and S3. When the main switch circuit is turned on, S3 is disconnected, MOS3 is turned off, and is in a high-impedance state, which does not affect the passage of signals. When the main switch circuit is disconnected, S3 is turned on, the control signal is high, MOS3 is connected to the ground, and the crosstalk signal is connected to the ground, thereby maximizing the isolation of the input to output signals.

[0036] The negative voltage generating circuit is a universal charge pump circuit that can convert the positive power input into a 2-fold negative voltage output.

[0037] Strobe signal control circuit, such as Figure 4 As shown, it consists of MOS3, MOS4, R3, and R4. When power is off, MOS3 and MOS4 are off, MOS4 outputs a high impedance, and the main switch circuit is on. When power is on, when the control signal turns on MOS3, MOS4 turns on, MOS4 outputs a negative voltage, and the main switch circuit is off. When the control signal turns off MOS3, MOS4 turns off, MOS4 outputs a high impedance, and the main switch circuit is on.

[0038] The above embodiments are preferred implementation modes of the present invention, but the implementation modes of the present invention are not limited to the above embodiments. Any other changes, modifications, substitutions, combinations, and simplifications that do not deviate from the spirit and principles of the present invention should be considered as equivalent replacement methods and are included in the scope of protection of the present invention.

Claims

1. A high-speed electronic switch for Ethernet electrical port bypass, characterized in that: include: High-speed signal switching circuit, used for switching high-speed signal paths; High-speed signal high-frequency isolation circuit, used to improve the isolation of high-frequency signals; A negative voltage generating circuit is used to generate the negative voltage required to control the switch tube; The strobe signal control module is used to convert external logic signals into analog control signals.

2. A high-speed electronic switch for Ethernet electrical port bypass according to claim 1, characterized in that: The high-speed signal switching circuit uses a depletion-type NMOS tube as a main switch device.

3. The high-speed electronic switch for Ethernet electrical port bypass according to claim 1, characterized in that: The high-speed signal high-frequency isolation circuit includes an auxiliary MOS tube and a grounding resistance network.

4. The high-speed electronic switch for Ethernet electrical port bypass according to claim 1, characterized in that: The negative voltage generating circuit is a charge pump circuit, which includes a diode, a capacitor and an oscillator.

5. The high-speed electronic switch for Ethernet electrical port bypass according to claim 1, characterized in that: The strobe signal control module is composed of a MOS tube and a pull-down resistor; it outputs a high-impedance state when power is off.

6. The high-speed electronic switch for Ethernet electrical port bypass according to claim 1, characterized in that: The switch circuit supports multiple signal combination configurations, including 1:N or N:M switch path structures.

7. The high-speed electronic switch for Ethernet electrical port bypass according to claim 3, characterized in that: The auxiliary MOS tube in the high-frequency isolation circuit operates synchronously with the main switch.

8. The high-speed electronic switch for Ethernet electrical port bypass according to claim 1, characterized in that: The charge pump circuit outputs -10V when the input is +5V, or outputs -6.6V when the input is +3.3V.

9. The high-speed electronic switch for Ethernet electrical port bypass according to claim 1, characterized in that: The bypass delay of the switch circuit is less than 10 μs when the power is off, meeting the IEEE802.3 standard.

10. The high-speed electronic switch for Ethernet electrical port bypass according to claim 1, characterized in that: The high-speed signal switching circuit has an on-resistance of less than 1Ω and supports 4K@60Hz video signal transmission or USB 3.0 super-speed mode.