Display device and method for manufacturing display device

Abstract

The present invention provides a display device and a method of manufacturing the same, the display device according to one embodiment of the present invention comprises: a plurality of light emitting elements that emit light; an encapsulation layer covering the plurality of light emitting elements; a bank disposed on the encapsulation layer and defining a bank opening overlapping each of the plurality of light emitting elements; and a functional layer disposed at each of the bank openings. The bank includes a wing portion protruding toward the functional layer and tapering such that a width thereof gradually widens in a first direction away from the encapsulation layer.

Description

Technical Field

[0001] Embodiments of the present invention relate to a display device and a method for manufacturing the display device, and more particularly, to a display device and a method for manufacturing the display device capable of improving display quality. Background Art

[0002] Recently, electronic devices have been widely used. These electronic devices are used in various forms, such as mobile electronic devices and stationary electronic devices. These electronic devices include a display device capable of providing visual information such as images or videos to users in order to support various functions.

[0003] Recently, with the development of various electronic devices such as mobile phones, PDAs, computers, and large TVs, a variety of display devices that can be used in these devices have been developed. For example, widely used display devices in the market include liquid crystal display devices with backlight units, organic light-emitting display devices in which each color region emits light of a different color, and more recently, display devices with quantum dot color conversion layers (QD-CCLs). Quantum dots are excited by incident light and emit light with a wavelength longer than that of the incident light, which mainly uses light in the low wavelength band. Recently, with the diversification of the use of display devices, various designs that can improve the quality of display devices have been proposed.

[0004] The aforementioned background technology is technical information that the inventor possesses in order to derive the present invention or that he obtains in the process of deriving the present invention. It is not necessarily the known technology disclosed to the general public before the application of the present invention. Summary of the Invention

[0005] An object of the embodiments of the present invention is to provide a display device and a method for manufacturing the display device, which can improve display quality by increasing brightness and light conversion efficiency while preventing color mixing between pixels.

[0006] However, such technical problems are merely illustrative, and the technical problems to be solved by the present invention are not limited thereto.

[0007] One embodiment of the present invention discloses a display device comprising: a plurality of light-emitting elements that emit light; an encapsulation layer covering the plurality of light-emitting elements; a levee disposed on the encapsulation layer and defining a levee opening that overlaps each of the plurality of light-emitting elements; and a functional layer disposed in each of the levee openings. The levee includes a wing portion that protrudes toward the functional layer and is tapered such that its width gradually widens along a first direction away from the encapsulation layer.

[0008] In one embodiment, the bank may include: a first bank in a V-shape having a groove at its center with a width gradually widening along the first direction; and a second bank configured to fill the groove of the first bank.

[0009] In one embodiment, the first embankment may include a metal layer, and the metal layer may include: a flat portion, which is a flat portion on the packaging layer; an inclined portion, which is arranged on both sides of the flat portion and is inclined in a manner gradually away from each other along the first direction from the flat portion; and a protruding portion, which protrudes from the inclined portion toward the functional layer.

[0010] In one embodiment, the first bank may further include: a transparent coating layer, respectively disposed on the upper portion and the lower portion of the metal layer.

[0011] In one embodiment, the transparent coating layer may include indium tin oxide (ITO).

[0012] In one embodiment, the first bank may further include: an insulating layer disposed between the metal layer and the second bank.

[0013] In one embodiment, a portion of the inclined portion of the metal layer located proximal to the flat portion may be thicker than a portion located distal to the flat portion.

[0014] In one embodiment, the metal layer may include silver (Ag).

[0015] In one embodiment, the second bank may include a liquid-repellent material having liquid-repellent properties.

[0016] In one embodiment, the second bank may be T-shaped and configured to fill the groove.

[0017] Another embodiment of the present invention discloses a method for manufacturing a display device, which includes: a step of configuring an encapsulation layer in a manner that covers a plurality of light-emitting elements; a step of configuring an organic layer on the encapsulation layer; a step of forming a plurality of organic openings in the organic layer; a step of configuring a plurality of layers including a metal layer in a manner that covers the organic openings and the organic layer; a step of etching a layer stacked on the encapsulation layer in the remaining areas except for the area overlapping with the organic opening, i.e., the photolithography area, in the top view to form a dam defining the dam opening; and a step of configuring a functional layer in the dam opening.

[0018] In one embodiment, the organic opening may be tapered such that its width gradually widens along a first direction away from the encapsulation layer.

[0019] In one embodiment, the step of configuring the multiple layers may include configuring the metal layer in a V-shape according to the tapered shape of the organic opening so as to provide a groove in the center of the organic opening whose width gradually widens along the first direction.

[0020] In one embodiment, the step of configuring the plurality of layers may include configuring a liquid-repellent layer in a manner capable of covering the metal layer and filling the groove.

[0021] In one embodiment, the step of forming the bank may include: after etching the plurality of layers, disposing a liquid-repellent layer in a manner capable of filling the groove.

[0022] In one embodiment, the width of the photolithography region may be wider than the width of the organic opening, and the step of forming the bank includes the step of providing a wing protruding toward the bank opening.

[0023] In one embodiment, the step of configuring the plurality of layers may further include the step of configuring a transparent coating layer on the upper portion and the lower portion of the metal layer.

[0024] In one embodiment, the metal layer of the embankment may include: a flat portion, which is a flat portion on the packaging layer; an inclined portion, which is arranged on both sides of the flat portion and is gradually inclined away from each other along a first direction away from the packaging layer; and a protruding portion, which protrudes from the inclined portion toward the embankment opening.

[0025] In one embodiment, a portion of the inclined portion of the metal layer located proximal to the flat portion may be thicker than a portion located distal to the flat portion.

[0026] In one embodiment, the metal layer may include silver (Ag).

[0027] Other aspects, features, and advantages besides those described above will become more apparent from the following detailed description for implementing the invention, the appended claims, and the accompanying drawings.

[0028] (Effects of the Invention)

[0029] According to the embodiments of the present invention, a bank portion can be provided that can further improve light scattering and reflection, thereby preventing color mixing, increasing brightness and light conversion efficiency, and realizing a display device and a method for manufacturing the display device with improved display quality.

[0030] The effects of the present invention are not limited to the effects mentioned above, and those skilled in the art can clearly understand other effects not mentioned from the description of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 It is a perspective view schematically showing a display device according to an embodiment of the present invention.

[0032] Figure 2 This is a cross-sectional view schematically showing a display device according to one embodiment of the present invention.

[0033] Figure 3 Show Figure 2 The functional layers of each optical layer.

[0034] Figure 4 This is an equivalent circuit diagram showing a light-emitting diode included in a display device according to an embodiment of the present invention and a sub-pixel circuit electrically connected to the light-emitting diode.

[0035] Figure 5 This is a cross-sectional view schematically showing a display device according to one embodiment of the present invention.

[0036] Figure 6 The cross-sectional view schematically showing the bank and the functional layer of one embodiment of the present invention is enlarged. Figure 5 Figure VI of the .

[0037] Figures 7 to 11 This is a cross-sectional view schematically showing some steps of a method for manufacturing a display device according to an embodiment of the present invention.

[0038] Figures 12 to 15 This is a cross-sectional view schematically showing some steps of a method for manufacturing a display device according to an embodiment of the present invention.

[0039] Description of Reference Signs

[0040] 1: Display device; 100: Substrate; PX1, PX2, PX3: First, second, and third sub-pixels; LED1, LED2, LED3: First, second, and third light-emitting diodes; 300: Encapsulation layer; FNL: Functional layer; 510, 520: First and second quantum dot layers; 530: Transmission layer; 600: Bank; 610: First bank; 620: Second bank; CFL: Color filter DETAILED DESCRIPTION

[0041] The present invention can be modified in many ways and can have many embodiments. Specific embodiments are illustrated in the accompanying drawings and described in detail in the specific embodiments. Figure 1 The embodiments described below will clarify the effects, features, and methods of implementing the present invention. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various forms.

[0042] Hereinafter, embodiments of the present application will be described in detail with reference to the accompanying drawings. In the description related to the drawings, the same or corresponding components are designated with the same reference numerals, and repetitive description of these components is omitted.

[0043] In the following embodiments, the terms first, second, and the like are not intended to have a limiting meaning, but are used as a purpose of distinguishing one component from another.

[0044] In the following embodiments, the singular expression includes the plural expression unless it is explicitly stated otherwise in the context.

[0045] In the following embodiments, the terms including or having indicate the presence of the features or components described in the specification, and are not intended to exclude the possibility of adding one or more other features or components in advance.

[0046] In the following embodiments, when a portion such as a film, a region, a component, or the like is on or above another portion, it includes not only the case where it is directly above the other portion, but also the case where another film, region, component, or the like is interposed therebetween.

[0047] In the drawings, the size of the components can be exaggerated or reduced for the sake of convenience in explanation. For example, the size and thickness of each structure shown in the drawings are arbitrarily shown for the sake of convenience in explanation, and thus the present application is not necessarily limited to the drawings.

[0048] In the following embodiments, the X-axis, the Y-axis, and the Z-axis are not limited to three axes on a rectangular coordinate system, but can be interpreted as a broad meaning including the same. For example, although the X-axis, the Y-axis, and the Z-axis can be orthogonal to each other, they can also refer to different directions that are not orthogonal to each other.

[0049] In a case where a certain embodiment can be implemented in different ways, a specific process sequence can be performed differently from the described sequence. For example, two processes described in succession can be performed substantially at the same time, or in the reverse order.

[0050] Figure 1 is a perspective view schematically showing a display device of an embodiment of the present application.

[0051] Referring to Figure 1 , the display device 1 can include a display region DA that presents an image and a non-display region NDA that does not present an image. The display device 1 can provide an image by arranging an array of a plurality of sub-pixels in the display region DA in a two-dimensional manner on an x-y plane. Each sub-pixel can emit light of a color different from each other, for example, it can be one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel.

[0052] In one embodiment, the plurality of sub-pixels include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. For ease of description, the following description takes the case where the first sub-pixel PX1 is a red sub-pixel, the second sub-pixel PX2 is a green sub-pixel, and the third sub-pixel PX3 is a blue sub-pixel as an example.

[0053] The first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 are regions capable of emitting red light Lr, green light Lg, and blue light Lb, respectively. The display device 1 can provide an image using the light emitted from the sub-pixels.

[0054] The non-display area (NDA), which is an area that does not display an image, may entirely surround the display area (DA). Drivers or main voltage lines for supplying electrical signals or power to the pixel circuits may be located in the non-display area (NDA). The non-display area (NDA) may also include pads that can be electrically connected to electronic components or a printed circuit board.

[0055] The display area DA can be Figure 1 The display area DA may have a polygonal shape including a quadrilateral. For example, the display area DA may have a rectangular shape with a transverse length greater than a longitudinal length, or a rectangular shape with a transverse length less than a longitudinal length, or a square shape. In another embodiment, the display area DA may be a polygon such as a circle, an ellipse, or a triangle or a pentagon. Furthermore, Figure 1 The display device 1 is shown as a flat panel display device, but the display device 1 can be implemented in various shapes such as a flexible, foldable, and rollable display device.

[0056] In one embodiment, the display device 1 may be an organic light-emitting display device. In another embodiment, the display device 1 may be an inorganic light-emitting display device or a quantum dot light-emitting display device. For example, the light-emitting layer of the display elements included in the display device may include organic matter, inorganic matter, quantum dots, organic matter and quantum dots, inorganic matter and quantum dots, or organic matter, inorganic matter, and quantum dots. For ease of explanation, the following detailed description focuses on the case where the display device 1 is an organic light-emitting display device.

[0057] Figure 2 It is a cross-sectional view schematically showing a display device 1 according to an embodiment of the present invention.

[0058] Reference Figure 2The display device 1 may include a circuit layer PCL on a substrate 100. The circuit layer PCL may include first to third sub-pixel circuits PC1, PC2, and PC3, and an insulating layer. Each of the first to third sub-pixel circuits PC1, PC2, and PC3 may include a transistor and / or a capacitor. The display element layer DEL may include first to third light-emitting elements as display elements, for example, first to third light-emitting diodes LED1, LED2, and LED3. The first to third sub-pixel circuits PC1, PC2, and PC3 may be electrically connected to the first to third light-emitting diodes LED1, LED2, and LED3 of the display element layer DEL, respectively.

[0059] The first to third light-emitting diodes LED1, LED2, and LED3 may be organic light-emitting diodes containing organic matter. In another embodiment, the first to third light-emitting diodes LED1, LED2, and LED3 may be inorganic light-emitting diodes containing inorganic matter. Inorganic light-emitting diodes may include PN junction diodes, which contain an inorganic semiconductor substrate. When a forward voltage is applied to the PN junction diode, holes and electrons are injected. The energy generated by the recombination of these holes and electrons is converted into light energy, thereby emitting light of a predetermined color. The aforementioned inorganic light-emitting diodes may have a width ranging from several to several hundred micrometers or several to several hundred nanometers. In some embodiments, the first to third light-emitting diodes LED1, LED2, and LED3 may be light-emitting diodes containing quantum dots. As previously described, the light-emitting layers of the first to third light-emitting diodes LED1, LED2, and LED3 may contain organic matter, inorganic matter, quantum dots, organic matter and quantum dots, or inorganic matter and quantum dots.

[0060] The first to third light-emitting diodes LED1, LED2, and LED3 can emit light of the same color. For example, the first to third light-emitting diodes LED1, LED2, and LED3 can emit blue light Lb. However, the present invention is not limited to this. In another embodiment, the first to third light-emitting diodes LED1, LED2, and LED3 can emit light of different colors. The light emitted by the first to third light-emitting diodes LED1, LED2, and LED3 (for example, blue light Lb) can pass through the encapsulation layer 300 on the display element layer DEL and through the functional layer FNL.

[0061] The functional layer FNL may include an optical layer that converts the color of light (e.g., blue light, Lb) emitted from the display element layer DEL or transmits it without converting it. For example, the functional layer FNL may include a quantum dot layer that converts the light (e.g., blue light, Lb) emitted from the display element layer DEL into light of another color, and a transmissive layer that transmits the light (e.g., blue light, Lb) emitted from the display element layer DEL without converting its color. The functional layer FNL may include a first quantum dot layer 510 corresponding to the first sub-pixel PX1, a second quantum dot layer 520 corresponding to the second sub-pixel PX2, and a transmissive layer 530 corresponding to the third sub-pixel PX3. The first quantum dot layer 510 can convert the blue light Lb into red light Lr, and the second quantum dot layer 520 can convert the blue light Lb into green light Lg. The transmissive layer 530 allows the blue light Lb to pass through without converting it.

[0062] The color filter CFL may be disposed on the functional layer FNL. A capping layer CL may be disposed between the functional layer FNL and the color filter CFL. The color filter CFL may include first to third color filters 810, 820, and 830 of different colors. In one embodiment, the first color filter 810 may be a red color filter, the second color filter 820 may be a green color filter, and the third color filter 830 may be a blue color filter.

[0063] The color purity of the light converted by the functional layer FNL and the light transmitted therethrough is improved as they pass through the first to third color filters 810, 820, and 830, respectively. Furthermore, the color filter CFL can prevent or minimize external light (e.g., light incident on the display device 1 from outside) from being reflected and perceived by the user.

[0064] An overcoat layer 900 may be provided on the color filter CFL. Overcoat layer 900 may include an organic material. For example, overcoat layer 900 may include a light-transmitting organic material such as an acrylic resin. Overcoat layer 900 may act as a buffer against external pressure and provide a flat top surface.

[0065] In one embodiment, after the functional layer FNL, the cap layer CL, and the color filter CFL are sequentially formed on the encapsulation layer 300, an overcoat layer 900 can be formed directly on the color filter CFL by coating and curing. In some embodiments, other optical films, such as anti-reflection (AR) films, can be disposed on the overcoat layer 900. Furthermore, in some embodiments, a window (not shown) can also be disposed on the overcoat layer 900.

[0066] The display device 1 having the aforementioned structure may include electronic devices such as televisions, billboards, screens for cinemas, monitors, tablet PCs, and notebook computers that can display dynamic or static images.

[0067] Figure 3 Show Figure 2 The functional layers of each optical layer.

[0068] Reference Figure 3 , the first quantum dot layer 510 can convert the incident blue light Lb into red light Lr. Figure 3 As shown, the first quantum dot layer 510 may include a first photosensitive polymer BR1, first quantum dots QD1 dispersed in the first photosensitive polymer BR1, and first scattering particles SC1.

[0069] The first quantum dots QD1 may be excited by the blue light Lb and isotropically emit red light Lr having a wavelength longer than that of the blue light. The first photosensitive polymer BR1 may be an organic substance having light transmittance.

[0070] The first scattering particles SC1 scatter blue light Lb that is not absorbed by the first quantum dots QD1, thereby stimulating more first quantum dots QD1 and increasing color conversion efficiency. The first scattering particles SC1 may be, for example, titanium oxide (TiO2) or metal particles. The first quantum dots QD1 may be selected from II-VI compounds, III-V compounds, IV-VI compounds, Group IV elements, Group IV compounds, and combinations thereof.

[0071] The second quantum dot layer 520 can convert the incident blue light Lb into green light Lg. Figure 3 As shown, the second quantum dot layer 520 may include a second photosensitive polymer BR2, second quantum dots QD2 dispersed in the second photosensitive polymer BR2, and second scattering particles SC2.

[0072] The second quantum dots QD2 can be excited by the blue light Lb and isotropically emit green light Lg having a wavelength longer than that of the blue light. The second photosensitive polymer BR2 can be an organic material having light transmittance.

[0073] The second scattering particles SC2 scatter blue light Lb that is not absorbed by the second quantum dots QD2, thereby stimulating more second quantum dots QD2 and increasing color conversion efficiency. The second scattering particles SC2 may be, for example, titanium oxide (TiO2) or metal particles. The second quantum dots QD2 may be selected from Group II-VI compounds, Group III-V compounds, Group IV-VI compounds, Group IV elements, Group IV compounds, and combinations thereof.

[0074] As some embodiments, the first quantum dot QD1 and the second quantum dot QD2 may be made of the same material. In this case, the size of the second quantum dot QD2 may be smaller than that of the first quantum dot QD1.

[0075] The transmission layer 530 can transmit the blue light Lb incident on the transmission layer 530 without converting the blue light Lb. Figure 3 As shown, the transmissive layer 530 may include a third photosensitive polymer BR3 in which third scattering particles SC3 are dispersed. The third photosensitive polymer BR3 may be, for example, a light-transmitting organic material such as silicone resin or epoxy resin, and may be the same material as the first and second photosensitive polymers BR1 and BR2. The third scattering particles SC3 can scatter and emit blue light Lb, and may be the same material as the first and second scattering particles SC1 and SC2.

[0076] Figure 4 This is an equivalent circuit diagram showing a light-emitting diode included in a display device according to an embodiment of the present invention and a sub-pixel circuit electrically connected to the light-emitting diode. Figure 4 The sub-pixel circuit PC shown in FIG. Figure 2 Each pixel circuit in the first to third sub-pixel circuits PC1, PC2, and PC3 described above, Figure 4 The light emitting diode LED can be equivalent to the previous reference Figure 2 The first to third light emitting diodes LED1, LED2, LED3 are described.

[0077] Reference Figure 4 The sub-pixel electrode (e.g., anode) of a light-emitting diode, such as a light-emitting diode LED, can be connected to the sub-pixel circuit PC, and the counter electrode (e.g., cathode) of the light-emitting diode LED can be connected to a common voltage line VSL or an auxiliary wiring (not shown) that supplies a common voltage ELVSS. The light-emitting diode LED can emit light at a brightness corresponding to the amount of current supplied from the sub-pixel circuit PC.

[0078] The auxiliary pixel circuit PC can control the amount of current flowing from the driving voltage ELVDD to the common voltage ELVSS via the light emitting diode LED in accordance with the data signal. The auxiliary pixel circuit PC may include a first transistor T1, a second transistor T2, a third transistor T3, and a storage capacitor Cst.

[0079] Each of the first transistor T1, the second transistor T2, and the third transistor T3 may be an oxide semiconductor transistor including a semiconductor layer composed of an oxide semiconductor, or a silicon semiconductor transistor including a semiconductor layer composed of polycrystalline silicon. Depending on the type of transistor, the first electrode may be one of a source electrode and a drain electrode, and the second electrode may be the other of the source electrode and the drain electrode.

[0080] The first transistor T1 may be a driving transistor. A first electrode of the first transistor T1 may be connected to a driving voltage line VDL supplying a driving voltage ELVDD, and a second electrode thereof may be connected to a sub-pixel electrode of the light-emitting diode LED. A gate electrode of the first transistor T1 may be connected to a first node N1. The first transistor T1 may control the amount of current flowing from the driving voltage ELVDD to the light-emitting diode LED in response to the voltage of the first node N1.

[0081] The second transistor T2 may be a switching transistor. A first electrode of the second transistor T2 may be connected to the data line DL, and a second electrode thereof may be connected to the first node N1. A gate electrode of the second transistor T2 may be connected to the scan line SL. When a scan signal is supplied to the scan line SL, the second transistor T2 may be turned on, electrically connecting the data line DL and the first node N1.

[0082] The third transistor T3 may be an initialization transistor and / or a detection transistor. A first electrode of the third transistor T3 may be connected to the second node N2, a second electrode may be connected to the detection line ISL, and a gate electrode of the third transistor T3 may be connected to the control line CTL.

[0083] The storage capacitor Cst may be connected between the first node N1 and the second node N2. For example, a first capacitor electrode of the storage capacitor Cst may be connected to the gate electrode of the first transistor T1, and a second capacitor electrode of the storage capacitor Cst may be connected to the sub-pixel electrode of the light emitting diode LED.

[0084] Although Figure 4 In the figure, the first transistor T1, the second transistor T2 and the third transistor T3 are shown as NMOS transistors, but the present invention is not limited thereto. For example, at least one of the first transistor T1, the second transistor T2 and the third transistor T3 may be formed by a PMOS transistor.

[0085] Although Figure 4 3 transistors are shown in FIG. 3 , but the present invention is not limited thereto. The sub-pixel circuit PC may include four or more transistors.

[0086] Figure 5 1 is a cross-sectional view schematically showing a display device according to an embodiment of the present invention. Figure 5The display device 1 can include first, second, and third sub-pixels PX1, PX2, and PX3 that emit different colors, for example, the first sub-pixel PX1 emits red light Lr, the second sub-pixel PX2 emits green light Lg, and the third sub-pixel PX3 emits blue light Lb.

[0087] The display device 1 can include a stacked structure of a substrate 100, a circuit layer PCL on the substrate 100, a display element layer DEL, a functional layer FNL, and a color filter CFL. The display element layer DEL can include first to third light emitting diodes LED1, LED2, LED3 electrically connected to sub-pixel circuits of the circuit layer PCL. The circuit layer PCL can include a plurality of sub-pixel circuits corresponding to the first to third sub-pixels PX1, PX2, PX3, respectively, and each sub-pixel circuit can include a plurality of transistors TFT and a storage capacitor Cst as described with reference to Figure 4 Figure 4 For example, the transistors TFT can be drive transistors (e.g., T1 of FIG. 1).

[0088] The substrate 100 can be made of glass or a high molecular resin. In this case, the high molecular resin can include at least one of polyether sulfone, polyarylate, polyether imide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate, cellulose triacetate, cellulose acetate propionate, or the like. The substrate 100 can have a single layer or a multi-layer structure of the aforementioned substances. As an embodiment, the substrate 100 can have an organic / inorganic / organic structure.

[0089] The circuit layer PCL can be disposed on the substrate 100. Figure 5 The circuit layer PCL can include the transistors TFT, the storage capacitor Cst, and a first buffer layer 111, a second buffer layer 112, a gate insulating layer 113, an interlayer insulating layer 115, and a planarization layer 118 disposed below and / or above constituent elements thereof as shown in FIG. 1.

[0090] The first buffer layer 111 and the second buffer layer 112 can reduce or block penetration of foreign matter, moisture, or external air from a lower portion of the substrate 100. The first buffer layer 111 and the second buffer layer 112 can include inorganic insulators such as silicon nitride, silicon oxynitride, and silicon oxide, and can be a single layer or a multi-layer including the aforementioned inorganic insulators.

[0091] A bias electrode BSM can be disposed on the first buffer layer 111 corresponding to the transistors TFT. In an embodiment, a voltage can be applied to the bias electrode BSM. Also, the bias electrode BSM can function to prevent external light from reaching a semiconductor layer Act. Thereby, characteristics of the transistors TFT can be stabilized. In some embodiments, the bias electrode BSM can be omitted.​

[0092] A semiconductor layer Act may be disposed on the second buffer layer 112. The semiconductor layer Act may include amorphous silicon or polycrystalline silicon. As another embodiment, the semiconductor layer Act may include an oxide of one or more substances selected from the group consisting of indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), aluminum (Al), cesium (Cs), cerium (Ce), and zinc (Zn). In some embodiments, the semiconductor layer Act is a Zn oxide-based material, which may be formed of Zn oxide, In-Zn oxide, Ga-In-Zn oxide, etc. In some embodiments, the semiconductor layer Act may be an IGZO (In-Ga-Zn-O), ITZO (In-Sn-Zn-O), or IGTZO (In-Ga-Sn-Zn-O) semiconductor, which contains a metal such as indium (In), gallium (Ga), or tin (Sn) in ZnO. The semiconductor layer Act may include a channel region and a source region and a drain region respectively disposed on both sides of the channel region. The gate electrode GE may overlap with the channel region of the semiconductor layer Act.

[0093] The gate electrode GE may include a low-resistance metal material, such as molybdenum (Mo), aluminum (Al), copper (Cu), or titanium (Ti), and may be composed of a single layer or multiple layers of the above materials.

[0094] A gate insulating layer 113 may be disposed between the semiconductor layer Act and the gate electrode GE. The gate insulating layer 113 may include an inorganic insulator such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, or zinc oxide.

[0095] The first electrode CE1 of the storage capacitor Cst may be disposed on the same layer as the gate electrode GE. The first electrode CE1 may be formed of the same material as the gate electrode GE. Figure 5 1 and 2. The gate electrode GE of the transistor TFT and the first electrode CE1 of the storage capacitor Cst are shown as being separately configured from each other, but in another embodiment, the storage capacitor Cst may overlap with the transistor TFT. In this case, the gate electrode GE of the transistor TFT may function as the first electrode CE1 of the storage capacitor Cst.

[0096] The interlayer insulating layer 115 may be configured to cover the gate electrode GE and may include an inorganic insulator such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, or zinc oxide.

[0097] A second electrode CE2 of the storage capacitor Cst, a source electrode SE, and a drain electrode DE can be provided on an upper portion of the interlayer insulating layer 115.

[0098] The second electrode CE2 of the storage capacitor Cst, the source electrode SE, and the drain electrode DE can include an electrically conductive substance including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or the like, and can be formed of a single layer or a plurality of layers including the aforementioned material. As an example, the second electrode CE2 of the storage capacitor Cst, the source electrode SE, and the drain electrode DE can be configured in a multi-layer structure of Ti / Al / Ti. The source electrode SE and the drain electrode DE can be connected to a source region or a drain region of the semiconductor layer Act through a contact hole.

[0099] The second electrode CE2 of the storage capacitor Cst can overlap the first electrode CE1 with the interlayer insulating layer 115 interposed therebetween, and form the storage capacitor Cst. In this case, the interlayer insulating layer 115 can function as a dielectric layer of the storage capacitor Cst.

[0100] The planarization layer 118 can be provided to cover the second electrode CE2 of the storage capacitor Cst, the source electrode SE, and the drain electrode DE. The planarization layer 118 can be a film formed of an organic substance in a single layer or a plurality of layers, and can provide a flat upper surface. The planarization layer 118 can include, for example, Benzocyclobutene (BCB), polyimide, Hexamethyldisiloxane (HMDSO), Polymethylmethacrylate (PMMA), or a general-purpose polymer such as Polystyrene (PS), a polymer derivative having a phenol formaldehyde group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine polymer, a p-xylene polymer, a vinyl alcohol polymer, and a mixture thereof.

[0101] A display element layer DEL can be provided on the circuit layer PCL of the aforementioned structure. The display element layer DEL can include first to third light emitting diodes LED1, LED2, LED3 as display elements. The first light emitting diode LED1, the second light emitting diode LED2, and the third light emitting diode LED3 can each include a first sub-pixel electrode 210R, a second sub-pixel electrode 210G, and a third sub-pixel electrode 210B. In an embodiment, the first light emitting diode LED1, the second light emitting diode LED2, and the third light emitting diode LED3 can collectively include a light emitting layer 220 and a counter electrode 230.

[0102] The first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B may be (semi-)transparent electrodes or reflective electrodes. In some embodiments, the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B may include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or aluminum zinc oxide (AZO). In one embodiment, the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B may include a reflective film containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or compounds thereof. Alternatively, a film made of ITO, IZO, ZnO, or In 2 O 3 may be further included above or below the aforementioned reflective film. For example, the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B may be made of ITO / Ag / ITO.

[0103] A pixel definition film 215 may be disposed on the planarization layer 118. The pixel definition film 215 may have openings 215OP that expose the center portions of the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B. The pixel definition film 215 may cover the edges of the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B. The pixel definition film 215 can prevent arcing, etc., from occurring at the edges of the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B by increasing the distance between the edges of the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B and the counter electrode 230 above the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B.

[0104] The pixel definition film 215 may be made of one or more organic insulating materials selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenolic resin.

[0105] The light-emitting layer 220 of the first light-emitting diode LED1, the second light-emitting diode LED2, and the third light-emitting diode LED3 may include an organic substance containing a fluorescent or phosphorescent substance that emits red, green, blue, or white light. The light-emitting layer 220 may be a low-molecular organic substance or a high-molecular organic substance. Functional layers such as a hole transport layer (HTL), a hole injection layer (HIL), an electron transport layer (ETL), and an electron injection layer (EIL) may be optionally further configured below and above the light-emitting layer 220. Figure 5 As shown, the light-emitting layer 220 can be formed integrally throughout the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B. However, the present invention is not limited to this. In some embodiments, the light-emitting layer 220 can also include a layer patterned corresponding to each of the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B. In either case, the light-emitting layer 220 can be a first-color light-emitting layer. The first-color light-emitting layer can emit light in a first wavelength band, for example, blue light. In one embodiment, the light-emitting layer 220 can emit light with a wavelength of 450 nm to 495 nm.

[0106] The counter electrode 230 is disposed on the light-emitting layer 220 and may be disposed corresponding to the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B. The counter electrode 230 may be integrally formed across the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B. In one embodiment, the counter electrode 230 may be formed of a conductive material with a low work function. For example, the counter electrode 230 may include a (semi-)transparent layer containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or alloys thereof. Alternatively, the counter electrode 230 may further include a layer such as ITO, IZO, ZnO, or In2O3 on the (semi-)transparent layer containing the aforementioned materials.

[0107] The first to third light-emitting areas EA1, EA2, and EA3 may correspond to the first to third sub-pixels PX1, PX2, and PX3, respectively. The first to third light-emitting areas EA1, EA2, and EA3 may be areas where light generated by the first to third light-emitting diodes LED1, LED2, and LED3 is emitted, respectively. The first light-emitting area EA1 may be defined as a portion of the first sub-pixel electrode 210R exposed by the opening 215OP of the pixel definition film 215. The second light-emitting area EA2 may be defined as a portion of the second sub-pixel electrode 210G exposed by the opening 215OP of the pixel definition film 215. The third light-emitting area EA3 may be defined as a portion of the third sub-pixel electrode 210B exposed by the opening 215OP of the pixel definition film 215. In other words, each of the first, second, and third light-emitting areas EA1, EA2, and EA3 may be defined by the opening 215OP of the pixel definition film 215.

[0108] The first light-emitting area EA1, the second light-emitting area EA2, and the third light-emitting area EA3 may be spaced apart from each other. Regions other than the first light-emitting area EA1, the second light-emitting area EA2, and the third light-emitting area EA3 in the display area DA may be non-light-emitting regions. The first light-emitting area EA1, the second light-emitting area EA2, and the third light-emitting area EA3 may be divided by the non-light-emitting regions.

[0109] A spacer (not shown) for preventing mask stamping may also be included on the pixel definition film 215. In one embodiment, the spacer may be integrally formed with the pixel definition film 215. For example, the spacer and the pixel definition film 215 may be formed simultaneously in the same process using a half-tone mask process.

[0110] The encapsulation layer 300 can be configured to cover the display element layer DEL. Since the first light-emitting diode LED1, the second light-emitting diode LED2, and the third light-emitting diode LED3 are easily damaged by moisture or oxygen flowing in from the outside, they can be covered and protected by the encapsulation layer 300. The encapsulation layer 300 can cover the display area DA and extend outside the display area DA. The encapsulation layer 300 may include at least one organic encapsulation layer and at least one inorganic encapsulation layer. For example, the encapsulation layer 300 may include a first inorganic encapsulation layer 310, a first organic encapsulation layer 320, and a second inorganic encapsulation layer 330 stacked in sequence.

[0111] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 can include one or more inorganic substances among aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, silicon oxynitride. The first organic encapsulation layer 320 can include a substance of a polymer series. As the material of the polymer series, acrylic resin, epoxy resin, polyimide, polyethylene, etc. can be included. As an embodiment, the first organic encapsulation layer 320 can include acrylate. The first organic encapsulation layer 320 can be formed by hardening a monomer or coating a polymer.

[0112] The encapsulation layer 300 can prevent the crack from spreading between the first inorganic encapsulation layer 310 and the first organic encapsulation layer 320 or between the first organic encapsulation layer 320 and the second inorganic encapsulation layer 330 even if the crack occurs in the encapsulation layer 300 by including the aforementioned multi-layer structure. It is possible to prevent or minimize the formation of a path through which external moisture or oxygen, etc. penetrates into the display area DA.

[0113] In some embodiments, other layers such as a cap layer can also be interposed between the first inorganic encapsulation layer 310 and the counter electrode 230.

[0114] Also, in an embodiment, the first organic encapsulation layer 320 can include a blue pigment or a blue dye. The first organic encapsulation layer 320 can pass only light of a predetermined wavelength and absorb light of other wavelengths. In an embodiment, the first organic encapsulation layer 320 can pass only blue light, for example, can pass only light of a wavelength belonging to 450 nm to 495 nm.

[0115] Thus, the first organic encapsulation layer 320 can absorb a part of light passing through the color filter CFL or a part of light reflected by the counter electrode 230 and / or the first to third sub-pixel electrodes 210R, 210G, 210B of the lower portion of the first organic encapsulation layer 320 among external light incident toward the display device 1. The first organic encapsulation layer 320 can minimize the part of the reflected light from reaching the functional layer FNL, for example, the first and second quantum dot layers 510, 520. Accordingly, it is possible to reduce the light emission reflection of the external light or the internal reflected light at the first and second quantum dot layers 510, 520 and to prevent unintended color from being presented. Also, it is possible to improve the color purity and the brightness of the display device 1.

[0116] Also, in the case where the first organic encapsulation layer 320 includes a blue pigment or a blue dye, it is possible to have an effect corresponding to the color filter without adding an additional process for forming the color filter, thus having an advantage of saving on the process. However, the present application is not limited thereto, and an additional color filter can be disposed at the upper portion of the encapsulation layer 300.

[0117] The embankment 600 may be disposed on the encapsulation layer 300. The embankment 600 may comprise an organic or inorganic material. For example, the embankment 600 may be formed of an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride. Optionally, the embankment 600 may comprise a light-shielding material to function as a light-shielding layer. The light-shielding material may comprise, for example, at least one of a black pigment, a black dye, black particles, or metal particles.

[0118] The bank 600 may define a bank opening 600OP. The first bank opening 600OP1 of the bank 600 may correspond to the opening 215OP of the pixel definition film 215 through which the first sub-pixel electrode 210R is exposed. The second bank opening 600OP2 of the bank 600 may correspond to the opening 215OP of the pixel definition film 215 through which the second sub-pixel electrode 210G is exposed. The third bank opening 600OP3 of the bank 600 may correspond to the opening 215OP of the pixel definition film 215 through which the third sub-pixel electrode 210B is exposed. That is, when observed from a direction perpendicular to the substrate 100 (z-axis direction), the first embankment opening 600OP1 of the embankment 600 can overlap with the opening 215OP of the pixel definition film 215 that exposes the first sub-pixel electrode 210R, the second embankment opening 600OP2 of the embankment 600 can overlap with the opening 215OP of the pixel definition film 215 that exposes the second sub-pixel electrode 210G, and the third embankment opening 600OP3 of the embankment 600 can overlap with the opening 215OP of the pixel definition film 215 that exposes the second sub-pixel electrode 210G.

[0119] The functional layer FNL may fill the bank opening 600OP of the bank 600. In one embodiment, the functional layer FNL may include at least one of quantum dots and scattering particles. The functional layer FNL may include a first quantum dot layer 510, a second quantum dot layer 520, and a transmission layer 530.

[0120] The first quantum dot layer 510 may fill the first bank opening 600OP1 of the bank 600 , overlap the first emission area EA1 , and include a first light emitting diode LED1 and a first quantum dot layer 510 .

[0121] The first quantum dot layer 510 can convert light of a first wavelength band generated in the light-emitting layer 220 on the first sub-pixel electrode 210R into light of a second wavelength band. The first quantum dot layer 510 can convert blue light into red light. For example, when light of a wavelength of 450 nm to 495 nm is generated in the light-emitting layer 220 on the first sub-pixel electrode 210R, the first quantum dot layer 510 can convert this light into light of a wavelength of 630 nm to 780 nm. Therefore, light of a wavelength of 630 nm to 780 nm can be emitted to the outside in the first sub-pixel PX1.

[0122] The first quantum dot layer 510 may include a first photosensitive polymer BR1 , and first quantum dots QD1 and first scattering particles SC1 dispersed in the first photosensitive polymer BR1 .

[0123] The second quantum dot layer 520 may fill the second bank opening 600OP2 of the bank 600 . The second quantum dot layer 520 may overlap the second emission area EA2 . The second sub-pixel PX2 may include a second light emitting diode LED2 and a second quantum dot layer 520 .

[0124] The second quantum dot layer 520 can convert light in the first wavelength band generated in the light-emitting layer 220 on the second sub-pixel electrode 210G into light in a third wavelength band. The second quantum dot layer 520 can convert blue light into green light. For example, when the light-emitting layer 220 on the second sub-pixel electrode 210G generates light with a wavelength of 450 nm to 495 nm, the second quantum dot layer 520 can convert this light into light with a wavelength of 495 nm to 570 nm. Therefore, light with a wavelength of 495 nm to 570 nm can be emitted to the outside in the second sub-pixel PX2.

[0125] The second quantum dot layer 520 may include a second photosensitive polymer BR2 and second quantum dots QD2 and second scattering particles SC2 dispersed in the second photosensitive polymer BR2.

[0126] The transmission layer 530 may fill the third bank opening 600OP3 of the bank 600 . The transmission layer 530 may overlap the third light emitting area EA3 . The third sub-pixel PX3 may include a third light emitting diode LED3 and the transmission layer 530 .

[0127] The transmissive layer 530 can emit light generated in the light-emitting layer 220 on the third sub-pixel electrode 210B to the outside without wavelength conversion. The transmissive layer 530 can pass blue light without converting it. For example, when light with a wavelength of 450 nm to 495 nm is generated in the light-emitting layer 220 on the third sub-pixel electrode 210B, the transmissive layer 530 can emit the light to the outside without wavelength conversion.

[0128] The transmission layer 530 may include a third photosensitive polymer BR3 in which third scattering particles SC3 are dispersed. In one embodiment, the transmission layer 530 may not include quantum dots.

[0129] At least one of the first quantum dot QD1 and the second quantum dot QD2 can include a semiconductor material such as cadmium sulfide (CdS), cadmium telluride (CdTe), zinc sulfide (ZnS), or indium phosphide (InP). The quantum dot can be several nanometers in size, and the wavelength of the converted light may change depending on the size of the quantum dot.

[0130] In one embodiment, the core of the quantum dot may be selected from Group II-VI compounds, Group III-V compounds, Group IV-VI compounds, Group IV elements, Group IV compounds, and combinations thereof.

[0131] The II-VI compound may be selected from the group consisting of binary compounds, ternary compounds, and quaternary compounds, wherein the binary compound is selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof, and the ternary compound is selected from the group consisting of AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe , CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof, and the quaternary compound is selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0132] The group III-V compound can be selected from the group consisting of binary compounds, ternary compounds, and quaternary compounds, wherein the binary compounds are selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof, the ternary compounds are selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and mixtures thereof, and the quaternary compounds are selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof.

[0133] The group IV-VI compound can be selected from the group consisting of binary compounds, ternary compounds, and quaternary compounds, wherein the binary compounds are selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof, the ternary compounds are selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof, and the quaternary compounds are selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. As the group IV element, Si, Ge, and mixtures thereof can be selected. As the group IV compound, a binary compound selected from the group consisting of SiC, SiGe, and mixtures thereof can be selected.

[0134] At this time, the binary compound, ternary compound, or quaternary compound can exist in the particle at a uniform concentration, or can exist in the same particle at a local concentration distribution. Alternatively, it can also have a core / shell structure in which one quantum dot surrounds other quantum dots. The interface of the core and the shell can have a concentration gradient in which the element existing in the shell is lower in concentration the closer it is to the center.

[0135] In several embodiments, the quantum dot may have a core-shell structure including the aforementioned core and a shell surrounding the core. The shell of the quantum dot may perform the role of a protective layer for preventing the chemical denaturation of the core to maintain semiconductor properties and / or the role of a charging layer for imparting electrophoretic properties to the quantum dot. The shell may be a single layer or a multilayer. The interface between the core and the shell may have a concentration gradient in which the closer the element present in the shell is to the center, the lower its concentration. Examples of the shell of the quantum dot may include metal or non-metal oxides, semiconductor compounds, or combinations thereof.

[0136] For example, the metal or non-metal oxides can be exemplified by binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, or ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, but the present invention is not limited thereto.

[0137] Furthermore, examples of the semiconductor compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc., but the present invention is not limited thereto.

[0138] In one embodiment, quantum dots can have a full width at half maximum (FWHM) of the emission wavelength spectrum of approximately 45 nm or less, preferably approximately 40 nm or less, and more preferably approximately 30 nm or less. Within this range, color purity or color reproducibility can be improved. Furthermore, light emitted by such quantum dots is omnidirectional, thereby increasing the viewing angle of the light.

[0139] Furthermore, the shape of quantum dots is the shape commonly used in this field and is not particularly limited. However, more specifically, spherical, pyramidal, multi-arm, or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanoplate particles, and the like can be used.

[0140] Quantum dots can adjust the color of the light they emit according to the size of the particles. As a result, quantum dots can emit a variety of colors, such as blue, red, and green.

[0141] The first, second, and third scattering particles SC1, SC2, and SC3 scatter light to emit more light. These particles can increase light extraction efficiency. At least one of the first, second, and third scattering particles SC1, SC2, and SC3 can be made of any metal or metal oxide to evenly scatter light. For example, at least one of the first, second, and third scattering particles SC1, SC2, and SC3 can be made of at least one of TiO2, ZrO2, Al2O3, In2O3, ZnO, SnO2, Sb2O3, and ITO. Furthermore, at least one of the first, second, and third scattering particles SC1, SC2, and SC3 can have a refractive index of 1.5 or greater. This improves the light extraction efficiency of the functional layer (FNL). In some embodiments, at least one of the first, second, and third scattering particles SC1, SC2, and SC3 can be omitted.

[0142] The first photosensitive polymer BR1, the second photosensitive polymer BR2, and the third photosensitive polymer BR3 may be a light-transmitting organic substance. For example, at least one of the first photosensitive polymer BR1, the second photosensitive polymer BR2, and the third photosensitive polymer BR3 may include a polymer resin such as acrylic acid, benzocyclobutene (BCB), or hexamethyldisiloxane (HMDSO).

[0143] A cap layer CL may be disposed on the bank 600 and the functional layer FNL. The cap layer CL prevents or minimizes the infiltration of impurities such as moisture and / or air from damaging or contaminating the functional layer FNL. It also prevents the initiation and propagation of cracks due to external forces. In a display device 1 having a structure that does not include an upper substrate and has components stacked on a single substrate 100, the cap layer CL can enhance protection of the functional layer FNL and improve reliability.

[0144] The cover layer CL may cover the display area DA and extend to the outside of the display area DA. The cover layer CL may include an inorganic insulator such as silicon nitride, silicon oxide, or silicon oxynitride. The functional layer FNL, such as the first quantum dot layer 510, the second quantum dot layer 520, and the transmission layer 530 may be interposed between the cover layer CL and the encapsulation layer 300. As mentioned above, the first quantum dot layer 510 and the second quantum dot layer 520 may include quantum dots. Since the quantum dots are composed of nanoparticles, they may react with moisture, oxygen, etc. and degrade. Therefore, the cover layer CL and the encapsulation layer 300 may cover the first quantum dot layer 510 and the second quantum dot layer 520 at the upper and lower parts of the first quantum dot layer 510 and the second quantum dot layer 520 to prevent moisture, oxygen, etc. from flowing into the quantum dots in the first quantum dot layer 510 and the second quantum dot layer 520.

[0145] A color filter CFL may be disposed on top of the cover layer CL. In one embodiment, the color filter CFL may be formed directly on the upper surface (z-axis direction) of the cover layer CL and may include a first color filter 810, a second color filter 820, and a third color filter 830. The first color filter 810 may be disposed on top of the first quantum dot layer 510 corresponding to the first sub-pixel PX1, the second color filter 820 may be disposed on top of the second quantum dot layer 520 corresponding to the second sub-pixel PX2, and the third color filter 830 may be disposed on top of the transmissive layer 530 corresponding to the third sub-pixel PX3. The first to third color filters 810, 820, and 830 may include a photosensitive resin. Furthermore, the first to third color filters 810, 820, and 830 may include pigments or dyes that display their own inherent colors.

[0146] The first color filter 810 may be a red color filter. For example, the first color filter 810 may only allow light with wavelengths between 630 nm and 780 nm to pass through. The first color filter 810 may include a red pigment or dye. The second color filter 820 may be a green color filter. For example, the second color filter 820 may only allow light with wavelengths between 495 nm and 570 nm to pass through. The second color filter 820 may include a green pigment or dye. The third color filter 830 may be a blue color filter. For example, the third color filter 830 may only allow light with wavelengths between 450 nm and 495 nm to pass through. The third color filter 830 may include a blue pigment or dye.

[0147] The color filter CFL can reduce the reflection of external light from the display device 1. For example, when external light reaches the first color filter 810, as described above, only light of a predetermined wavelength can pass through the first color filter 810, while light of other wavelengths can be absorbed by the first color filter 810. Therefore, among the external light incident on the display device 1, only light of a predetermined wavelength passes through the first color filter 810, and a portion of it is reflected by the opposing electrode 230 and / or the first sub-pixel electrode 210R at the bottom of the first color filter 810 and re-emitted to the outside. The first color filter 810 only reflects a portion of the external light incident on the position of the first sub-pixel PX1 to the outside, thereby reducing the reflection of external light. This description can also be applied to the second color filter 820 and the third color filter 830.

[0148] In one embodiment, the color filter CFL can be disposed between the light-shielding layers BM. The light-shielding layer BM can be disposed on the cover layer CL and can overlap with the embankment 600 in a top view. The light-shielding layer BM can include a light-shielding material. The light-shielding material can include an opaque inorganic insulating material containing a metal oxide such as titanium oxide (TiO2), chromium oxide (Cr2O3), or molybdenum oxide (MoO3), or an opaque organic insulating material such as black resin. The light-shielding layer BM can prevent light leakage from the display device 1 by blocking light from being emitted to the outside, that is, to areas outside the light-emitting area.

[0149] The outer coating layer 900 can be configured to cover the color filter CFL. The outer coating layer 900 can be an organic layer containing organic matter. For example, the outer coating layer 900 can contain a colorless, light-transmitting organic matter such as an acrylic resin. The outer coating layer 900 can protect the color filter CFL and can flatten the upper surface of the color filter CFL. The lower surface of the outer coating layer 900 can have a concave-convex structure due to the stacked structure of the first to third color filters 810, 820, and 830 of the color filter CFL. The upper surface of the outer coating layer 900 can be a flat surface. In some embodiments, other layers such as a cover layer can be further configured on the upper part of the outer coating layer 900 and / or between the outer coating layer 900 and the color filter CFL. The cover layer can contain an inorganic substance. In some embodiments, the outer coating layer 900 can be covered by a window (not shown).

[0150] Figure 6 This is a cross-sectional view schematically showing the bank and the functional layer of one embodiment of the present invention, which is an enlarged view showing Figure 5 Figure VI of the .

[0151] Reference Figure 6The bank 600 is disposed on the encapsulation layer 300 and may define a bank opening 600OP. The bank opening 600OP may overlap with the light-emitting diodes LED, for example, the first to third light-emitting diodes LED1, LED2, and LED3. Specifically, the first bank opening 600OP1 may correspond to the opening 215OP of the pixel definition film 215 that exposes the first sub-pixel electrode 210R. The second bank opening 600OP2 of the bank 600 may correspond to the opening 215OP of the pixel definition film 215 that exposes the second sub-pixel electrode 210G. The third bank opening 600OP3 of the bank 600 may correspond to the opening 215OP of the pixel definition film 215 that exposes the third sub-pixel electrode 210B. That is, when observed from a direction perpendicular to the substrate 100 (z-axis direction), the first embankment opening 600OP1 of the embankment 600 can overlap with the opening 215OP of the pixel definition film 215 that exposes the first sub-pixel electrode 210R, the second embankment opening 600OP2 of the embankment 600 can overlap with the opening 215OP of the pixel definition film 215 that exposes the second sub-pixel electrode 210G, and the third embankment opening 600OP3 of the embankment 600 can overlap with the opening 215OP of the pixel definition film 215 that exposes the second sub-pixel electrode 210G.

[0152] At this time, the embankment 600 can play the role of a partition wall defining the embankment opening 600OP. In other words, the embankment 600 can be arranged between the embankment openings 600OP. In one embodiment, the embankment 600 can have an inverted trapezoidal shape in a cross section cut along a direction perpendicular to the display surface (e.g., xy plane) on which the image is displayed and / or the plane (e.g., xy plane) of the encapsulation layer 300. That is, in such a cross section, the embankment 600 can be tapered so that its width increases along a direction away from the encapsulation layer 300, for example, from the encapsulation layer 300 toward the color filter CFL ( Figure 6 The bank opening 600OP may have a right trapezoidal shape. That is, the bank opening 600OP may be a tapered opening such that the width of the bank opening 600OP gradually narrows in a direction away from the encapsulation layer 300, for example, from the encapsulation layer 300 toward the color filter CFL.

[0153] Furthermore, in one embodiment, the bank 600 may include wings 600W. The wings 600W may be formed to protrude from both sides of the upper portion of the inverted trapezoidal bank 600. Specifically, the wings 600W may protrude from both inclined sides of the inverted trapezoidal bank 600 toward the bank opening 600OP and / or the functional layer FNL disposed within the bank opening 600OP.

[0154] In this case, the bank opening 600OP may include a lower opening and an upper opening. The lower opening may be an opening defined by the bank 600 tapered in an inverted trapezoidal shape. The upper opening may be an opening defined by the wing 600W. In one embodiment, the width of the lower opening may become narrower as it approaches the upper portion, i.e., the width of the lower opening may be narrower along the direction from the encapsulation layer 300 toward the color filter CFL ( Figure 6 The width of the upper opening may gradually narrow in the +z direction (in the +z direction). In this case, the slope of the narrowing width may be constant. Furthermore, in one embodiment, the width of the upper opening may be constant. In this case, the width of the portion of the lower opening where the width is the smallest may be greater than the width of the upper opening. Furthermore, the upper opening may be formed by being offset inward from the upper portion of the lower opening toward the center of the opening.

[0155] Furthermore, the embankment 600 may include a first embankment 610 and a second embankment 620. The first embankment 610 includes a metal layer 611 and may constitute the lower portion of the embankment 600. In one embodiment, the first embankment 610 may be substantially V-shaped, thereby defining a groove GV in the center. The width of the groove GV may gradually increase along the encapsulation layer 300 toward the color filter CFL.

[0156] In one embodiment, the metal layer 611 may include a flat portion 611-1, an inclined portion 611-2, and a protruding portion 611-3. The flat portion 611-1 may be a flat portion on the encapsulation layer 300. The inclined portions 611-2 are disposed on both sides of the flat portion 611-1 and may be tapered so that the inclined portions 611-2 gradually move away from each other along the encapsulation layer 300 toward the color filter CFL. Therefore, it can be said that the metal layer 611 is roughly V-shaped. The protruding portion 611-3 may protrude outward from each inclined portion 611-2, that is, toward the functional layer FNL accommodated in the bank opening 600OP. Since the metal layer 611 is roughly V-shaped, a groove GV may be provided in the center.

[0157] In one embodiment, the metal layer 611 may have a constant thickness, but is not limited thereto. In other embodiments, the thickness of the inclined portion 611-2 of the metal layer 611 may be thicker near the flat portion 611-1 than at the distal end of the flat portion 611-1. As described later, this may be due to the metal layer 611 being stacked on the organic layer.

[0158] In one embodiment, the metal layer 611 may include silver (Ag). Silver (Ag) particles have excellent reflectivity, thus allowing light reaching the metal layer 611 to be reflected from its surface. Consequently, incident light entering the first quantum dot layer 510, the second quantum dot layer 520, and the transmissive layer 530 can be scattered on the surface of the metal layer 611 and travel along multiple paths. Consequently, the incident light can undergo more color conversion or scattering within the first quantum dot layer 510, the second quantum dot layer 520, and the transmissive layer 530, thereby improving light conversion efficiency. Furthermore, since the metal layer 611 can reflect light reaching the metal layer 611 from its surface, it can reduce absorption of the incident light by other parts of the bank 600, thereby improving light extraction efficiency and brightness. Furthermore, due to their surface plasmon resonance properties, the silver (Ag) particles strongly resonate with visible light, thereby scattering the visible light. This can strongly scatter the light reaching the metal layer 611 , thereby improving light conversion efficiency.

[0159] Furthermore, the first bank 610 may further include a transparent coating layer 612 disposed above and below the metal layer 611. The transparent coating layer 612 may thus be substantially V-shaped, similar to the metal layer 611. Furthermore, the transparent coating layer 612 may include a protrusion, thereby forming a wing portion 600W together with the protrusion 611-3 of the metal layer 611.

[0160] In one embodiment, the transparent coating layer 612 may include indium tin oxide (ITO). In this case, the metal layer 611 may be The transparent coating layer 612 is When a metal layer 611, such as a silver (Ag) layer, is provided, the transparent coating layer 612 can provide better adhesion. Furthermore, since the transparent coating layer 612 is transparent, it can strengthen the adhesion of the metal layer 611 while not affecting the light reflection of the metal layer 611.

[0161] However, the present invention is not limited thereto. In other embodiments, the metal layer 611 may include aluminum (Al). In this case, the transparent coating layer 612 may not be disposed on the upper and lower portions of the metal layer 611. Figure 6 As shown, the description will focus on the case where the metal layer 611 includes silver (Ag) and the transparent coating layers 612 are arranged on the upper part and the lower part of the metal layer 611.

[0162] The first bank 610 may further include an insulating layer 613 disposed on top of the transparent coating layer 612. In other words, the insulating layer 613 may be disposed between the second bank 620 and the metal layer 611, and / or between the second bank 620 and the transparent coating layer 612, described later. The insulating layer 613 may thus be substantially V-shaped, similar to the metal layer 611. Furthermore, the insulating layer 613 may include a protrusion, thereby forming the wing 600W together with the protrusion 611-3 of the metal layer 611.

[0163] In one embodiment, the insulating layer 613 may include an inorganic insulator such as silicon nitride.

[0164] A second bank 620 may be disposed on the first bank 610. The second bank 620 is disposed on the insulating layer 613 and may be configured to fill the groove GV. Thus, the second bank 620 may be substantially T-shaped.

[0165] In one embodiment, the second bank 620 may include a liquid-repellent material having liquid-repellent properties relative to the materials forming the first quantum dot layer 510, the second quantum dot layer 520, and the transmission layer 530. The liquid-repellent material may include a hydrophobic organic polymer. For example, the liquid-repellent material may include an organic material containing fluorine (F).

[0166] The second bank 620 can serve to impart liquid repellency, so that during a process such as inkjet printing to form the first quantum dot layer 510, the second quantum dot layer 520, and the transmissive layer 530, the ink forming the first quantum dot layer 510, the second quantum dot layer 520, and the transmissive layer 530 is located within the bank openings 600OP rather than being applied to the bank 600. Because the ink is hydrophilic and the second bank 620 is hydrophobic, the second bank 620 can prevent the ink from overflowing from the bank openings 600OP in which it is to be disposed to other adjacent bank openings 600OP. This prevents mixing between adjacent first quantum dot layers 510, the second quantum dot layer 520, and the transmissive layer 530, and prevents color mixing between pixels, thereby improving the manufacturing quality of the display device 1.

[0167] Figures 7 to 11 This is a cross-sectional view schematically showing some steps of a method for manufacturing a display device according to an embodiment of the present invention.

[0168] Reference Figure 7 First, a substrate 100, a circuit layer PCL on the substrate 100, a display element layer DEL on the circuit layer PCL, and a packaging layer 300 on the display element layer DEL can be configured. For ease of explanation, Figure 7 Only the encapsulation layer 300 is shown.

[0169] An organic layer OL may be disposed on the encapsulation layer 300. In one embodiment, the organic layer OL may include polyimide. The organic layer OL may define an organic opening OLOP. The organic opening OLOP is a space for arranging the bank 600 and may overlap with the pixel definition film 215. In this case, the organic layer OL may overlap with the first to third light-emitting areas EA1, EA2, and EA3. Furthermore, the organic layer OL may overlap with the first to third light-emitting diodes LED1, LED2, and LED3.

[0170] In one embodiment, the organic layer OL may have a regular trapezoidal shape. That is, the organic layer OL may be tapered such that its width gradually narrows from the encapsulation layer 300 toward the upper portion. Furthermore, the organic opening OLOP may have an inverted trapezoidal shape. That is, the organic opening OLOP may be a tapered opening such that its width gradually widens from the encapsulation layer 300 toward the upper portion.

[0171] Reference Figure 8 In order to cover the organic layer OL and the organic opening OLOP defined by the organic layer OL, a transparent coating layer 612 and a metal layer 611 can be deposited thereon. For example, a lower transparent coating layer 612 can be deposited, a metal layer 611 can be deposited thereon, and an upper transparent coating layer 612 can be deposited again on the metal layer 611. An insulating layer 613 can be deposited on the upper transparent coating layer 612. Thus, since the transparent coating layer 612, the metal layer 611, and the insulating layer 613 are deposited according to the shape of the tapered organic layer OL and the organic opening OLOP, as described above, a roughly V-shaped structure with a groove GV can be formed within the organic opening OLOP. Moreover, the transparent coating layer 612, the metal layer 611, and the insulating layer 613 can be said to have a concave-convex structure as a whole. Specifically, the transparent coating layer 612, the metal layer 611, and the insulating layer 613 can have a concave portion on the organic opening OLOP and a protruding portion on the organic layer OL.

[0172] Reference Figure 9 A liquid-repellent layer LL may be disposed on the insulating layer 613. As described above, the liquid-repellent layer LL includes a liquid-repellent substance and may be configured to fill the groove GV.

[0173] Furthermore, a photoresist PR may be disposed on the liquid repellent layer LL. Specifically, the photoresist PR may be disposed in a photolithography area PTA. The photolithography area PTA is a region where the photoresist PR is disposed, and may overlap with the organic opening OLOP in a top view. Furthermore, in one embodiment, the photolithography area PTA may be formed to be wider than the organic opening OLOP. That is, the photoresist PR may be configured to be wider than the organic opening OLOP so as to cover the organic opening OLOP.

[0174] Referring to Figure 10 Next, the organic layer OL, the transparent coating layer 612, the metal layer 611, the insulating layer 613, and the liquid-repellent layer LL can be etched. In an embodiment, the organic layer OL, the transparent coating layer 612, the metal layer 611, the insulating layer 613, and the liquid-repellent layer LL can be dry-etched. At this time, the remaining regions except for the photoresist region PTA in which the photoresist PR is disposed can be etched. That is, the region overlapping the organic opening OLOP can not be etched, and the organic layer OL can be etched.

[0175] At this time, since the width of the photoresist region PTA is wider than that of the organic opening OLOP, the bank 600 having the wing portion 600W can be formed. In consideration of the tolerance of the portion to be etched, the photoresist region PTA can be set to be slightly wider than the width of the organic opening OLOP. Also, the regions except for the photoresist region PTA, that is, the organic layer OL and the transparent coating layer 612, the metal layer 611, the insulating layer 613, and the liquid-repellent layer LL disposed on the organic layer OL can be etched, thereby forming the bank opening 600OP.

[0176] Next, referring to Figure 11 The photoresist PR can be removed using a photoresist stripping process. Also, the functional layer FNL can be disposed in the bank opening 600OP. In an embodiment, the functional layer FNL can be disposed through an inkjet printing process.

[0177] According to the manufacturing method of the display device of an embodiment of the present application, the metal layer 611 can be disposed on the outer surface of the bank 600 while forming the bank 600 having an inverted-trapezoidal shape. Thereby, the incident light incident to the first quantum dot layer 510, the second quantum dot layer 520, and the transmission layer 530 continuously occurs reflection within the first quantum dot layer 510, the second quantum dot layer 520, and the transmission layer 530, and thus color conversion or scattering can occur more.

[0178] Figures 12 to 15 is a cross-sectional view schematically illustrating a part of steps of the manufacturing method of the display device of an embodiment of the present application. Since the manufacturing method in the present embodiment is similar to the aforementioned manufacturing method, the following description will be centered on the points of difference.

[0179] Referring to Figure 12 As described above, the transparent coating layer 612, the metal layer 611, and the insulating layer 613 can be disposed on the organic layer OL and the organic opening OLOP.

[0180] Referring to Figure 13, the remaining areas except the photolithography area PTA may be etched. That is, the area overlapping with the organic opening OLOP may not be etched, while the organic layer OL may be etched. At this time, since the width of the photolithography area PTA is wider than that of the organic opening OLOP, a first bank 610 having a wing portion 600W may be formed.

[0181] Reference Figure 14 The liquid-repellent layer LL can be disposed on the insulating layer 613. Specifically, the liquid-repellent layer LL can be configured to fill the groove GV, thereby being substantially arranged in a T-shape. In one embodiment, the liquid-repellent layer LL can be disposed on the first bank 610 using an inkjet printing process and then hardened to form the second bank 620.

[0182] Reference Figure 15 A functional layer FNL may be disposed in the bank opening 600OP. In one embodiment, the functional layer FNL may be disposed by an inkjet printing process.

[0183] As described above, although the present invention has been described with reference to the embodiments shown in the accompanying drawings, this is for illustrative purposes only. Those skilled in the art will fully appreciate that various modifications and equivalent embodiments may be made based on the embodiments. Therefore, the true technical scope of the present invention should be determined based on the appended claims.

Claims

1. A display device, in, include: a plurality of light-emitting elements that emit light, an encapsulation layer covering the plurality of light-emitting elements, a bank portion disposed on the encapsulation layer and defining a bank opening overlapping with each of the plurality of light emitting elements; and a functional layer disposed at each of the bank openings; The embankment includes: The wing portion protrudes toward the functional layer and is tapered so that its width gradually widens along a first direction away from the packaging layer.

2. The display device according to claim 1, wherein The embankment includes: The first bank is V-shaped so as to have a groove at its center with a width gradually widening along the first direction; and The second bank is configured to fill the groove of the first bank.

3. The display device according to claim 2, wherein: The first bank includes a metal layer, The metal layer comprises: a flat portion, which is a flat portion on the encapsulation layer; inclined portions disposed on both sides of the flat portion and inclined so as to gradually move away from each other along the first direction from the flat portion; and A protrusion protrudes from the inclined portion toward the functional layer.

4. The display device according to claim 3, wherein The first embankment further comprises: The transparent coating layer is respectively arranged on the upper part and the lower part of the metal layer.

5. The display device according to claim 4, wherein The transparent coating layer includes indium tin oxide. The display device according to claim 3 , wherein: The first embankment further comprises: The insulating layer is disposed between the metal layer and the second bank.

7. The display device according to claim 3, wherein: The thickness of a portion of the inclined portion of the metal layer located near the flat portion is thicker than that of a portion located far from the flat portion.

8. The display device according to claim 3, wherein: The metal layer includes silver.

9. The display device according to claim 2, wherein: The second bank portion includes a liquid-repellent material having liquid-repellent properties.

10. The display device according to claim 9, wherein The second bank has a T-shape and is configured to fill the groove.

11. A method for manufacturing a display device, in, include: a step of disposing an encapsulation layer in a manner covering a plurality of light-emitting elements; a step of disposing an organic layer on the encapsulation layer; forming a plurality of organic openings in the organic layer; a step of disposing a plurality of layers including a metal layer in a manner covering the organic opening and the organic layer; A step of etching a layer stacked on the encapsulation layer in a region other than a region overlapping the organic opening, i.e., a photolithography region, in a top view to form a bank defining the bank opening; and The step of disposing a functional layer in the bank opening.

12. The method for manufacturing a display device according to claim 11, wherein: The organic opening is tapered such that a width thereof gradually widens along a first direction away from the encapsulation layer.

13. The method for manufacturing a display device according to claim 12, wherein: The steps of configuring the multiple layers include: The step of disposing the metal layer in a V-shape according to the tapered shape of the organic opening so as to form a groove at the center of the organic opening whose width gradually widens along the first direction.

14. The method for manufacturing a display device according to claim 13, wherein: The steps of configuring the multiple layers include: A step of disposing a liquid-repellent layer so as to cover the metal layer and fill the groove.

15. The method for manufacturing a display device according to claim 13, wherein: The step of forming the bank includes: After etching the plurality of layers, a liquid repellent layer is provided so as to fill the groove.

16. The method for manufacturing a display device according to claim 13, wherein: The width of the photolithography area is wider than the width of the organic opening, The step of forming the bank includes: The step of providing wings that project toward the bank opening.

17. The method for manufacturing a display device according to claim 11, wherein: The step of configuring the plurality of layers further comprises: The step of disposing a transparent coating layer on the upper part and the lower part of the metal layer.

18. The method for manufacturing a display device according to claim 11, wherein: The metal layer of the bank includes: a flat portion, which is a flat portion on the encapsulation layer; inclined portions, disposed on both sides of the flat portion and inclined gradually away from each other along a first direction away from the encapsulation layer; and A protruding portion protrudes from the inclined portion toward the embankment opening.

19. The method for manufacturing a display device according to claim 18, wherein: The thickness of a portion of the inclined portion of the metal layer located near the flat portion is thicker than that of a portion located far from the flat portion.

20. The method for manufacturing a display device according to claim 11, wherein: The metal layer includes silver.

Images