A flat plate type atomic layer deposition apparatus

Abstract

The application relates to a semiconductor production and manufacturing device, and provides a flat plate type atomic layer deposition device, a flow field optimization assembly includes a flared block and an exhaust block; the flared block includes a flow guide part and a flared part, a plurality of gas inlet channels are equidistantly arranged on the flared part; a gas inlet screen plate is arranged between the flared part and a gas inlet end of a reaction inner cavity body, and a plurality of first through holes are equidistantly arranged on the gas inlet screen plate; the exhaust block includes a first exhaust cavity and a second exhaust cavity which are in communication with each other; an exhaust screen plate is arranged at the communication position of the first exhaust cavity and the second exhaust cavity, and a plurality of second through holes are arranged on the exhaust screen plate. According to the technical scheme, the flared block and the gas inlet screen plate are used to make the flow rate of the gas phase precursor enter the reaction inner cavity body uniformly, the exhaust screen plate is used to make the flow rate of the gas phase precursor exit the reaction inner cavity body uniformly, the uniformity of the flow field on the upper surface of a wafer in the reaction inner cavity body is effectively improved, and the deposition uniformity of the gas phase precursor on the upper surface of the wafer is further improved.

Description

Technical Field

[0001] This application relates to semiconductor manufacturing equipment, and more particularly to a planar atomic layer deposition apparatus. Background Technology

[0002] Atomic layer deposition is a method of forming a thin film by alternately pulsed gas-phase precursors into a reaction chamber and causing a chemical adsorption reaction on the substrate surface.

[0003] Existing atomic layer deposition equipment includes an outer reaction chamber and an inner reaction chamber fixedly installed inside the outer reaction chamber. A carrier disk is fixedly installed inside the inner reaction chamber. During transfer, the wafer needs to be transferred to the carrier disk by an external robotic arm. A heater is installed on the top of the inner wall of the outer reaction chamber. An air inlet pipe is provided on one side of the outer reaction chamber, which is connected to one side of the inner reaction chamber. An exhaust pipe is provided on the other side of the inner reaction chamber.

[0004] During the deposition reaction, the vapor precursor enters the reaction cavity through the inlet pipe and is extracted through the exhaust pipe. Since it is difficult to effectively control the uniformity of the vapor precursor flow field at the inlet and exhaust pipes, and the vapor precursor has a high degree of diffusion after entering the reaction cavity, it not only greatly increases the amount of vapor precursor used, but also makes it impossible to effectively control the uniformity of deposition on the wafer surface. Summary of the Invention

[0005] This application provides a planar atomic layer deposition apparatus to improve the uniformity of vapor phase precursor deposition on the surface of a wafer.

[0006] This application provides a planar atomic layer deposition apparatus, including: an outer reaction chamber, an inner reaction chamber disposed inside the outer reaction chamber, and further including: a flow field optimization component, the flow field optimization component including: a flared block and an exhaust block;

[0007] The flared block includes a guide section and a flared section arranged sequentially along the air intake direction. Multiple air intake channels are equidistantly arranged on the flared section. One end of the guide section is connected to the plasma generator, and the other end is connected to the flared section. The other end of the flared section is connected to the air intake end of the reaction outer cavity. An air intake screen plate is provided between the guide section and the air intake end of the reaction outer cavity. Multiple first through holes are equidistantly arranged on the air intake screen plate.

[0008] The exhaust block is connected to the outlet end of the outer cavity of the reaction. The exhaust block is provided with a first exhaust chamber and a second exhaust chamber that are interconnected. The first exhaust chamber is connected to the outlet end of the inner cavity of the reaction. An exhaust sieve plate is provided at the connection between the first exhaust chamber and the second exhaust chamber. The exhaust sieve plate is provided with multiple second through holes. An exhaust pipe port is provided on the second exhaust chamber.

[0009] In one implementation, the flow guide section has a flow guide channel inside, and the flared section has a flared channel inside that communicates with the air intake channel. The two ends of the flared channel are inclined outward along the air intake direction. The plasma generator, the flow guide channel, the flared channel, the first through hole, and the air intake end of the reaction outer cavity are connected in sequence.

[0010] In one implementation, the second exhaust chamber is arranged in a ring shape, and the first exhaust chamber is located within the ring shape of the second exhaust chamber.

[0011] The diameter of the second through hole increases along the exhaust direction, which is the direction of gas flow in the second exhaust chamber.

[0012] The exhaust pipe outlet is located away from the exhaust screen plate.

[0013] In one implementation, a flow controller is provided on the intake passage to regulate the intake flow rate of the intake passage.

[0014] In one implementation, a heating component is also included, which comprises a first heating wire and a second heating wire;

[0015] The first heating wire is distributed in a serpentine pattern on the upper part of the outer side of the reaction cavity, and the gap between the first heating wires decreases from the flared block to the exhaust block; the second heating wire is symmetrically arranged at both ends of the outer side of the reaction cavity.

[0016] In one implementation, a third heat insulation shield assembly is provided between the air inlet end of the outer reaction cavity and the air inlet end of the inner reaction cavity;

[0017] The third heat insulation panel group includes a first heat insulation plate and a second heat insulation plate arranged in parallel. The first heat insulation plate and the second heat insulation plate are connected by a first elastic adjustment member. A first guide plate extends from both sides of the second heat insulation plate and passes through the first heat insulation plate. The two ends of the first guide plate are respectively connected to the air inlet of the outer reaction cavity and the air inlet of the inner reaction cavity.

[0018] The first elastic adjustment component includes a first adjustment bolt and a first elastic component. The first elastic component is disposed between the first heat insulation plate and the second heat insulation plate. The first adjustment bolt passes through the second heat insulation plate, the first elastic component and the first heat insulation plate in sequence and is threadedly connected to the inner wall of the reaction outer cavity.

[0019] The side of the second heat insulation plate closest to the reaction cavity is mirrored.

[0020] In one implementation, the first heat insulation plate extends an arc-shaped limiting plate along the side where the second heat insulation plate is located, and there is a gap between the arc-shaped limiting plate and the second heat insulation plate.

[0021] The air inlet of the outer cavity of the reaction chamber is provided with a first slot that can cooperate with the first guide plate. When the arc-shaped limiting plate abuts against the second heat insulation plate, the first guide plate abuts against the first slot.

[0022] In one implementation, a fourth heat insulation panel group is provided between the gas outlet end of the reaction cavity and the exhaust block. The fourth heat insulation panel group includes a third heat insulation plate and a fourth heat insulation plate arranged in parallel.

[0023] The third heat insulation plate and the fourth heat insulation plate are connected by a second elastic adjustment member. The fourth heat insulation plate extends a second guide plate along the side where the gas outlet of the reaction cavity is located. The second guide plate passes through the third heat insulation plate, and the two ends of the second guide plate are respectively connected to the gas outlet of the reaction cavity and the first exhaust cavity.

[0024] The second elastic adjustment component includes a second adjustment bolt and a second elastic component. The second elastic component is disposed between the third heat insulation plate and the fourth heat insulation plate. The second adjustment bolt passes through the third heat insulation plate, the second elastic component and the fourth heat insulation plate in sequence and is threadedly connected to the inner wall of the exhaust block.

[0025] The third heat insulation plate has a mirrored surface on the side closest to the reaction chamber.

[0026] In one implementation, the gas outlet of the reaction chamber is provided with a third slot that can cooperate with the second guide plate.

[0027] In one implementation, a first heat insulation shield group and a second heat insulation shield group are provided between the heating component and the reaction outer cavity and are spliced ​​together.

[0028] The first heat insulation screen group includes multiple horizontally arranged first horizontal screens, which are integrally connected by a first support column. The bottommost first horizontal screen is connected to the outer top of the reaction cavity, and the two ends of the multiple horizontal screens extend into first side screens in the vertical direction.

[0029] The second heat insulation panel group includes multiple horizontally arranged second horizontal panels. The multiple horizontal panels are integrally connected by a second support column, and the topmost second horizontal panel is connected to the outer bottom of the reaction cavity. The two ends of the multiple horizontal panels extend into second side panels in the vertical direction.

[0030] The first side screen and the second side screen are arranged opposite to each other. A first connecting part is provided between the ends of the first side screen and a second connecting part is provided between the ends of the second side screen. The first connecting part and the second connecting part are arranged parallel to each other and are inclined to the adjacent outer wall of the reaction cavity.

[0031] The side of the first horizontal screen at the bottom closest to the reaction cavity, the side of the first side screen extending from the first horizontal screen at the bottom to both ends closest to the reaction cavity, the side of the second horizontal screen at the top closest to the reaction cavity, and the side of the second side screen extending from the second horizontal screen at the top to both ends closest to the reaction cavity are all mirrored.

[0032] In one implementation, the planar atomic layer deposition apparatus further includes a detachable loading fixture assembly, which includes: a support frame, a heat insulation block, a fixture end cap, and a fixture for holding the wafer.

[0033] The support frame passes through the first exhaust chamber and extends into the interior of the reaction chamber. The heat insulation block is set between the support frame and the carrier end cap. The carrier end cap is equipped with a telescopic shaft, which is slidably connected to the sliding channel on the outer reaction chamber.

[0034] A support shaft is provided on the side of the support frame away from the heat insulation block. A rolling bearing is installed on the support shaft. The rolling bearing abuts against the bottom of the inner chamber of the reaction chamber. A sliding plate is provided at the bottom of the support frame. A mounting seat is provided on the side of the exhaust block near the end cover of the carrier. A universal ball is installed on the mounting seat, which is slidably connected to the heat insulation block and the sliding plate.

[0035] The support frame has multiple linearly distributed openings, and connecting ribs are provided between the multiple openings. The sliding plate is located at the bottom of the connecting ribs.

[0036] The support frame has an inclined part on the side near the first guide plate. The inclined part is inclined upward along the gas flow direction, and the top of the inclined part is connected to a guide surface.

[0037] A limiting part is provided at one end of the support frame away from the inclined part. The carrier is placed between the inclined part and the limiting part. A positioning pin is provided on the support frame between the inclined part and the limiting part. A positioning pin hole that mates with the positioning pin is provided on the carrier.

[0038] A sealing handle is provided on the outside of the vehicle end cap, and a sealing buckle that mates with the sealing handle is provided on the exhaust block.

[0039] In one implementation, the inner walls of the corresponding connection points of the outer reaction chamber air inlet, the first guide plate, the inner reaction chamber, the second guide plate, and the first exhaust chamber are flush.

[0040] The side of the exhaust screen plate closest to the heat insulation baffle is flush with the inner wall of the first exhaust chamber;

[0041] The guide surface, the upper surface of the carrier, the upper surface of the wafer, the upper surface of the limiting part, and the upper surface of the heat insulation block are flush;

[0042] The bottom of the first guide vane is located on the inclined surface of the inclined section, and the guide surface is located between the upper and lower surfaces of the inner wall of the first guide vane.

[0043] In one implementation, the planar atomic layer deposition apparatus further includes a pressure regulating pipe, which is disposed on the outer wall of the reaction outer cavity and connects to the interior of the reaction outer cavity;

[0044] The second exhaust chamber is also provided with a third through hole that connects to the interior of the outer reaction chamber. The third through hole is located near the exhaust pipe opening.

[0045] In one implementation, the planar atomic layer deposition apparatus further includes an integrated auxiliary component; the integrated auxiliary component includes a purge inlet pipe and a purge exhaust pipe; the purge inlet pipe and the purge exhaust pipe are disposed on opposite sides of the flared section and are respectively connected to the flared channel.

[0046] By applying the technical solution provided in this application, by setting a flared section at the air inlet position, setting multiple air inlet channels at equal intervals on the flared section, setting an air inlet screen plate between the flared section and the air inlet end of the outer reaction cavity, and setting a first exhaust cavity, an exhaust screen plate, and a second exhaust cavity that are connected in sequence at the exhaust position, the vapor precursor can be effectively diffused in the flared section and then uniformly enter the inner reaction cavity through the air inlet screen plate, and be uniformly discharged from the inner reaction cavity through the first exhaust cavity, the exhaust screen plate, and the second exhaust cavity in sequence. This effectively improves the uniformity of the flow field on the upper surface of the wafer in the inner reaction cavity, and makes the deposition of the vapor precursor on the upper surface of the wafer uniform.

[0047] By extending the first guide plates on both sides of the second heat insulation plate and the second guide plate on one side of the fourth heat insulation plate, the inner walls of the corresponding connections at the air inlet of the outer reaction chamber, the first guide plate, the inner reaction chamber, the second guide plate, and the first exhaust chamber are flush. The side of the exhaust screen plate near the heat insulation block is flush with the inner wall of the first exhaust chamber. The guide surface, the upper surface of the carrier, the upper surface of the wafer, the upper surface of the limiting part, and the upper surface of the heat insulation block are also flush. In this way, the uniformity of the flow field inside the inner reaction chamber located on the upper surface of the wafer can be further effectively controlled. Furthermore, by setting a flow controller on the air intake channel and placing the bottom of the first guide plate on the inclined surface of the inclined section, with the guide surface located between the upper and lower surfaces of the inner wall of the first guide plate, it is possible not only to control the air intake flow rate in the air intake channel, but also to ensure that the flow velocity of the gas phase precursor after passing through the inclined section and through the guide surface is the same as the flow velocity through the exhaust screen plate, thereby further improving the uniformity of the flow field located on the upper surface of the wafer inside the reaction cavity, while effectively reducing the amount of gas phase precursor used and greatly improving the utilization rate of the gas phase precursor.

[0048] By parallelly arranging a first heat insulation plate and a second heat insulation plate between the air inlet end of the outer reaction cavity and the air inlet end of the inner reaction cavity, and connecting the first heat insulation plate and the second heat insulation plate to the outer reaction cavity via a first elastic adjustment member, and by parallelly arranging a third heat insulation plate and a fourth heat insulation plate between the air outlet end of the inner reaction cavity and the exhaust block, and connecting the third heat insulation plate and the fourth heat insulation plate to the exhaust block via a second elastic adjustment member, and by setting up horizontally arranged multi-layered first horizontal screens and second horizontal screens, with the two ends of the multi-layered first horizontal screens extending vertically to form first side screens, and the two ends of the multi-layered second horizontal screens extending vertically to form second side screens, not only can the heating components and the inner reaction cavity be effectively wrapped in multiple layers, greatly reducing the heat loss of the heating components and effectively preventing changes in the external temperature of the outer reaction cavity from affecting the heat in the area where the wafer is located, but also effectively reducing the difficulty of disassembling and assembling the inner reaction cavity, making it easier to disassemble and maintain the inner reaction cavity.

[0049] By arranging the first side screen and the second side screen opposite each other, and providing a first connecting part between the ends of the first side screen and a second connecting part between the ends of the second side screen, with the first and second connecting parts arranged parallel to each other and at an inclined angle to the adjacent outer wall of the reaction cavity, and by providing a mirror surface on the side of the second heat insulation plate near the reaction cavity and a mirror surface on the side of the third heat insulation plate near the reaction cavity, and by providing mirror surfaces on the sides of the first horizontal screen at the bottom, the first side screens extending from the bottom horizontal screen to both ends, the second horizontal screen at the top, and the second side screens extending from the top horizontal screen to both ends, not only is the heat loss of the heating component between the first and second connecting parts effectively reduced, but the distributed mirror surfaces can also effectively reflect the heat radiation of the heating component, improving the heating effect on the upper surface of the wafer.

[0050] A telescopic shaft is installed on the end cover of the carrier, and the telescopic shaft is slidably connected to the sliding channel on the outer cavity of the reaction. A support shaft is installed on the side of the support frame away from the heat insulation block, and a rolling bearing is installed on the support shaft. The rolling bearing abuts against the inner bottom of the inner cavity of the reaction. A sliding plate is installed at the bottom of the support frame. A mounting seat is installed on the side of the exhaust block near the end cover of the carrier. A universal ball is installed on the mounting seat and is slidably connected to the heat insulation block and the sliding plate. An inclined part is provided on the side of the support frame near the first guide plate. A limiting part is provided on the end of the support frame away from the inclined part. The carrier is placed between the inclined part and the limiting part. A positioning pin is provided on the support frame between the inclined part and the limiting part. A positioning pin hole that mates with the positioning pin is provided on the carrier, which can effectively facilitate the loading and unloading of the carrier and improve the convenience of disassembly, assembly and maintenance of the carrier. Attached Figure Description

[0051] To more clearly illustrate the technical solution of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0052] Figure 1 This is a schematic diagram of the overall structure of a planar atomic layer deposition apparatus provided in an embodiment of this application;

[0053] Figure 2 A schematic cross-sectional view of a planar atomic layer deposition apparatus provided in this application embodiment. Figure 1 ;

[0054] Figure 3 A schematic cross-sectional view of a planar atomic layer deposition apparatus provided in this application embodiment. Figure 2 ;

[0055] Figure 4 A schematic cross-sectional view of a planar atomic layer deposition apparatus provided in this application embodiment. Figure 3 ;

[0056] Figure 5 A schematic cross-sectional view of a planar atomic layer deposition apparatus provided in this application embodiment. Figure 4 ;

[0057] Figure 6 A partial structural diagram of a planar atomic layer deposition apparatus provided in this application embodiment. Figure 1 ;

[0058] Figure 7 A partial structural diagram of a planar atomic layer deposition apparatus provided in this application embodiment. Figure 2 ;

[0059] Figure 8 A partial structural diagram of a planar atomic layer deposition apparatus provided in this application embodiment. Figure 3 ;

[0060] Figure 9 A partial structural diagram of a planar atomic layer deposition apparatus provided in this application embodiment. Figure 4 ;

[0061] Figure 10 A partial structural diagram of a planar atomic layer deposition apparatus provided in this application embodiment. Figure 5 ;

[0062] Figure 11 A partial structural diagram of a planar atomic layer deposition apparatus provided in this application embodiment. Figure 6 .

[0063] In the picture:

[0064] 1-Outer reaction cavity, 2-Inner reaction cavity, 21-Mounting plate, 3-Flow field optimization component, 31-Flanged block, 311-Flow guide, 312-Flanged part, 313-Inlet channel, 314-Flow controller, 32-Exhaust block, 321-First exhaust chamber, 322-Second exhaust chamber, 323-Exhaust pipe port, 324-Third through hole, 325-Sealing buckle, 326-Mounting block, 33-Universal ball, 4-Inlet screen plate, 5-Exhaust screen plate, 51-Second through hole, 6-First heating wire, 7 - Second heating wire, 8- Heat insulation assembly, 81- First heat insulation screen assembly, 811- First horizontal screen section, 812- First side screen section, 813- First support column, 82- Second heat insulation screen assembly, 821- Second horizontal screen section, 822- Second side screen section, 823- Second support column, 83- Third heat insulation screen assembly, 831- First heat insulation plate, 832- Second heat insulation plate, 833- First guide plate, 834- First elastic adjustment element, 8341- First adjustment bolt, 8342- First elastic element, 835- Arc-shaped limiting plate, 84-Fourth heat insulation screen assembly, 841-Third heat insulation plate, 842-Fourth heat insulation plate, 843-Second guide plate, 844-Second elastic adjusting component, 8441-Second adjusting bolt, 8442-Second elastic component, 85-Strip connecting part, 9-Integrated auxiliary component, 91-Air pressure regulating pipe, 92-Purge intake pipe, 93-Purge exhaust pipe, 10-Detachable loading vehicle assembly, 101-Support frame, 102-Carrier, 103-Heat insulation block, 104-Carrier end cap. 105-Telescopic shaft, 106-Support shaft, 107-Rolling bearing, 108-Gap, 109-Connecting rib, 1010-Inclined part, 1011-Guide surface, 1012-Limiting part, 1013-Slide plate, 1014-Sealing handle, 1015-Handle, 1016-Positioning pin, 1017-Mounting base, 1018-Supporting foot, 11-Second limiting block, 12-Sliding channel, 13-Linear bearing, 14-Positioning protrusion, 15-First limiting block, 100-Plasma generator. Detailed Implementation

[0065] This application provides a planar atomic layer deposition apparatus, such as Figure 1 and Figure 4 As shown, the planar atomic layer deposition apparatus includes an outer reaction chamber 1 and an inner reaction chamber 2, with the inner reaction chamber 2 disposed inside the outer reaction chamber 1.

[0066] Among them, such as Figure 1 As shown, the planar atomic layer deposition apparatus further includes: a flow field optimization component 3 for optimizing the flow field inside the reaction cavity 2, the flow field optimization component 3 including: a flared block 31 and an exhaust block 32; as shown Figure 2As shown, the flared block 31 includes a guide section 311 and a flared section 312 arranged sequentially along the air intake direction. Multiple air intake channels 313 are equidistantly arranged on the flared section 312. One end of the guide section 311 is connected to the plasma generator 100, and the other end is connected to the flared section 312. The other end of the flared section 312 is connected to the air intake end of the reaction chamber 1. Figure 4 As shown, an air inlet screen plate 4 is provided between the flared part 312 and the air inlet end of the reaction outer cavity 1. The air inlet screen plate 4 is fixedly connected to the flared part 312, and multiple first through holes are provided at equal intervals on the air inlet screen plate 4.

[0067] Thus, the air intake channel 313 is connected to the flared section 312, and multiple air intake channels 313 are arranged at equal intervals and symmetrically distributed on both sides of the guide section 311. An air intake screen plate 4 is provided between the flared section 312 and the air intake end of the reaction outer cavity 1. Multiple first through holes are opened on the air intake screen plate 4 at equal intervals. Through the multiple first through holes at equal intervals, the flow velocity of the gas phase precursor diffused into the flared section 312 flowing out along the multiple first through holes can be uniform.

[0068] Among them, the exhaust block 32 is connected to the exhaust end of the outer reaction chamber 1, such as Figure 5 As shown, the exhaust block 32 is provided with a first exhaust chamber 321 and a second exhaust chamber 322 that are interconnected. The first exhaust chamber 321 is connected to the exhaust end of the reaction chamber 2. An exhaust sieve plate 5 is provided at the connection between the first exhaust chamber 321 and the second exhaust chamber 322. The exhaust sieve plate 5 is provided with a plurality of second through holes 51. An exhaust pipe port 323 is provided on the second exhaust chamber 322 and is connected to a vacuum pump.

[0069] Specifically, such as Figure 5 and Figure 6 As shown, an exhaust screen plate 5 is provided at the top of the second exhaust chamber 322. The exhaust screen plate 5 is fixedly connected to the exhaust block 32, and a plurality of second through holes 51 are provided on the exhaust screen plate 5, which are spaced apart. Based on this, as... Figure 5 As shown, the diameter of the second through hole 51 increases sequentially from the middle to both ends along the exhaust screen plate 5, thus forming a diameter of the second through hole 51 that increases along the exhaust direction.

[0070] The exhaust direction is the gas flow direction within the second exhaust chamber 322. The second exhaust chamber 322 is located inside the exhaust block 32 and is annular in shape. An exhaust port 323 is provided at the bottom of the second exhaust chamber 322. Through the cooperation of the second through hole 51 and the second exhaust chamber 322, the flow rate of the vapor precursor flowing into the second exhaust chamber 322 along the second through hole 51 can be made uniform. Thus, with the cooperation of the first through hole, the second through hole 51, and the second exhaust chamber 322, the uniformity of the flow field on the upper surface of the wafer within the reaction cavity 2 is effectively improved, resulting in uniform deposition of the vapor precursor on the upper surface of the wafer.

[0071] The flared block 31 and the inlet sieve plate 4 provided in this embodiment allow the gaseous precursor to enter the reaction cavity 2 at a uniform flow rate. Through the exhaust sieve plate 5 of the exhaust block 32, the gaseous precursor is discharged from the reaction cavity 2 at a uniform flow rate, which effectively improves the uniformity of the flow field on the upper surface of the wafer in the reaction cavity 2, thereby making the deposition of the gaseous precursor on the upper surface of the wafer uniform.

[0072] In one implementation, the flow guide 311 has a flow guide channel inside, and the flared section 312 has a flared channel inside that communicates with the air inlet channel 313. The two ends of the flared channel are inclined outwards along the air inlet direction. The plasma generator 100, the flow guide channel, the flared channel, the first through hole, and the air inlet end of the reaction outer cavity 1 are sequentially connected. For example... Figure 2 As shown, the flared portion 312 is flat and its two ends are inclined outward along the direction from the guide portion 311 to the reaction outer cavity 1, so that the gas phase precursor can be evenly diffused into the flared portion 312 along the air intake channel 313.

[0073] In this way, the gas phase precursor passes through the flared channel, the first through hole and the air inlet end of the reaction outer cavity 1 in sequence through the air inlet channel 313 to ensure uniform air intake.

[0074] In one implementation, such as Figure 5 As shown, the second exhaust chamber 322 has an annular layout, and the first exhaust chamber 321 is located within the annular layout of the second exhaust chamber 322. The diameter of the second through hole 51 increases along the exhaust direction, which is the gas flow direction within the second exhaust chamber 322. The exhaust port 323 is located away from the exhaust sieve plate 5. In this way, the discharged gaseous precursor can flow along the annular layout of the second exhaust chamber 322 and be discharged from the exhaust port 323. The annular layout of the second through hole 51 and the second exhaust chamber 322 can make the flow rate of the gaseous precursor smooth and uniform.

[0075] It should be noted that the gaseous precursor gas flows sequentially through the inlet channel 313, the flared channel, the first through hole, the inlet end of the outer reaction cavity 1, and the inlet end of the inner reaction cavity 2, and is discharged sequentially along the outlet end of the inner reaction cavity 2, the first exhaust cavity 321, the second through hole 51, the second exhaust cavity 322, and the exhaust pipe 323.

[0076] The direction of gas flow varies in different structures, for example... Figure 5 As shown, the dashed arrow in the upper half of the annular channel of the second exhaust chamber 322 indicates the gas flow direction. Specifically, the gas flows from the middle region to the two side regions. Correspondingly, the flow direction in the lower half of the annular channel of the second exhaust chamber 322 is from the two side regions to the exhaust port 323 in the middle region.

[0077] In one implementation, such as Figure 2 and Figure 3 As shown, a flow controller 314 is provided on the air intake channel 313 to adjust the air intake flow rate of the air intake channel 313. In this way, the flow controller 314 provided at the air intake end of the air intake channel 313 can effectively balance the flow rate difference between the vapor precursor flowing out of the first through hole and flowing into the second through hole 51, thereby effectively improving the uniformity of the flow field on the upper surface of the wafer, thus making the deposition of the vapor precursor on the upper surface of the wafer uniform.

[0078] In one implementation, the planar atomic layer deposition apparatus also includes a heating component, such as... Figure 2 , Figure 4 and Figure 6 As shown, the heating assembly includes a first heating wire 6. Figure 7 As shown, a mounting plate 21 can be provided above the outside of the reaction cavity 2. The first heating wire 6 is fixedly mounted on the mounting plate 21 near the side of the reaction cavity 2, that is, the first heating wire 6 is distributed in a serpentine pattern above the outside of the reaction cavity 2, and the gap of the first heating wire 6 decreases along the direction from the flared block 31 to the exhaust block 32. This effectively balances the heat carried away by the flow field optimization component 3, making the heat distribution above the wafer uniform.

[0079] like Figure 7 As shown, the heating assembly includes a second heating wire 7, which is symmetrically mounted at both ends of the outer surface of the reaction cavity 2. The symmetrical distribution of the second heating wire 7 relative to both ends of the reaction cavity 2, combined with the first heating wire 6, enables uniform heat distribution within the wafer region, effectively improving the uniformity and stability of the thermal field within the wafer region.

[0080] In one implementation, such as Figure 7 As shown, a third heat shield assembly 83 is provided between the air inlet end of the outer reaction chamber 1 and the air inlet end of the inner reaction chamber 2. The third heat shield assembly 83 includes a first heat shield 831 and a second heat shield 832 arranged in parallel. The first heat shield 831 and the second heat shield 832 are connected by a first elastic adjusting member 834. The second heat shield 832 extends to both sides to form a first guide plate 833, which passes through the first heat shield 831. The two ends of the first guide plate 833 are respectively connected to the air inlet end of the outer reaction chamber 1 and the air inlet end of the inner reaction chamber 2. In actual application, the first guide plate 833 and the second heat shield 832 are integrally formed.

[0081] like Figure 10As shown, the first elastic adjustment member 834 includes a first adjustment bolt 8341 and a first elastic member 8342. The first elastic member 8342 is disposed between the first heat insulation plate 831 and the second heat insulation plate 832. The first adjustment bolt 8341 passes through the second heat insulation plate 832, the first elastic member 8342 and the first heat insulation plate 831 in sequence and is threadedly connected to the inner wall of the reaction outer cavity 1.

[0082] Thus, the distance between the first heat insulation plate 831 and the second heat insulation plate 832 can be adjusted by rotating the first adjusting bolt 8341. The side of the second heat insulation plate 832 closest to the reaction cavity 2 is a mirror surface.

[0083] In one implementation, such as Figure 10 As shown, the first heat insulation plate 831 extends into an arc-shaped limiting plate 835 along the side where the second heat insulation plate 832 is located. There is a gap between the arc-shaped limiting plate 835 and the second heat insulation plate 832. The air inlet end of the outer reaction cavity 1 is provided with a first slot that can cooperate with the first guide plate 833. The air inlet end of the inner reaction cavity 2 is provided with a second slot that abuts against the first guide plate 833. When the arc-shaped limiting plate 835 abuts against the second heat insulation plate 832, the first guide plate 833 abuts against the first slot.

[0084] In one implementation, a fourth heat shield group 84 is provided between the air outlet of the reaction chamber 2 and the exhaust block 32. The third heat shield group 83 and the fourth heat shield group 84 have the same structure, but are located in different positions. The third heat shield group 83 is located between the air inlet of the reaction outer chamber 1 and the air inlet of the reaction inner chamber 2, while the fourth heat shield group 84 is located between the air outlet of the reaction inner chamber 2 and the exhaust block 32.

[0085] like Figure 11 As shown, the fourth heat insulation panel group 84 includes a third heat insulation plate 841 and a fourth heat insulation plate 842 arranged in parallel. The third heat insulation plate 841 and the fourth heat insulation plate 842 are connected by a second elastic adjusting member 844. The fourth heat insulation plate 842 extends a second guide plate 843 along the side where the gas outlet of the reaction cavity 2 is located. The second guide plate 843 passes through the third heat insulation plate 841, and the two ends of the second guide plate 843 are respectively connected to the gas outlet of the reaction cavity 2 and the first exhaust chamber 321. In actual application, the second guide plate 843 and the fourth heat insulation plate 842 are integrally formed.

[0086] like Figure 11As shown, the second elastic adjusting member 844 includes a second adjusting bolt 8441 and a second elastic member 8442. The second elastic member 8442 is disposed between the third heat insulation plate 841 and the fourth heat insulation plate 842. The second adjusting bolt 8441 passes through the third heat insulation plate 841, the second elastic member 8442, and the fourth heat insulation plate 842 in sequence and is threadedly connected to the inner wall of the exhaust block 32. The side of the third heat insulation plate 841 closest to the reaction cavity 2 is a mirror surface. It should be noted that in practical applications, the first elastic member 8342 and the second elastic member 8442 can be configured as compression springs.

[0087] In one implementation, the gas outlet of the reaction cavity 2 is provided with a third slot that can cooperate with the second guide plate 843.

[0088] In one implementation, the planar atomic layer deposition apparatus further includes a thermal insulation component 8, which comprises a first thermal insulation shield group 81, a second thermal insulation shield group 82, a third thermal insulation shield group, and a fourth thermal insulation shield group. Wherein, as... Figure 7 As shown, a first heat insulation panel group 81 and a second heat insulation panel group 82 are connected to each other between the heating component and the outer reaction cavity 1. The first heat insulation panel group 81 and the second heat insulation panel group 82 are located at the top and bottom of the inner reaction cavity 2, respectively. After the first heat insulation panel group 81 and the second heat insulation panel group 82 are connected, they work together with the third heat insulation panel group 83 and the fourth heat insulation panel group 84 to form a heat insulation layer that surrounds the inner reaction cavity 2 of the heating component.

[0089] The first heat insulation panel group 81 includes horizontally arranged multi-layer first horizontal panel sections 811, such as... Figure 7 As shown, the multi-layer first horizontal screen 811 is integrally connected by several first support columns 813, and the bottommost first horizontal screen 811 is fixedly connected to the outer top of the reaction cavity 2. The two ends of the multi-layer first horizontal screen 811 extend into first side screens 812 in the vertical direction, and are respectively arranged opposite to each other between the two first side screens 812 at both ends of the reaction cavity 2.

[0090] like Figure 7 As shown, the second heat insulation panel group 82 includes a multi-layered second horizontal panel 821 arranged horizontally. The multi-layered second horizontal panel 821 is integrally connected by a number of second support columns 823. The topmost second horizontal panel 821 is fixedly connected to the bottom of the reaction cavity 2. The two ends of the multi-layered second horizontal panel 821 extend into second side panels 822 in the vertical direction, which are arranged opposite to each other between the two second side panels 822 at both ends of the reaction cavity 2.

[0091] Among them, such as Figure 7As shown, the ends of the first heat insulation panel group 81 and the second heat insulation panel group 82 form strip-shaped connecting portions 85, which are inclined to the adjacent outer surface of the reaction cavity 2. More specifically, the first side panel 812 and the second side panel 822 are arranged opposite to each other, a first connecting portion is provided between the ends of the first side panel 812, and a second connecting portion is provided between the ends of the second side panel 822. The first connecting portion and the second connecting portion are arranged parallel to each other and inclined to the adjacent outer wall of the reaction cavity 2.

[0092] In this embodiment, the first side screen portion 812 and the second side screen portion 822 are correspondingly arranged, and a first gap is provided between the first connecting portion and the second connecting portion. The first gaps located at both ends of the reaction cavity 2 are symmetrically inclined. In this way, the length of the connecting gap can be increased, thereby reducing the heat dissipation efficiency at the gap, that is, improving the heat insulation performance.

[0093] It should be noted that the sides of the first horizontal screen portion 811 at the bottom closest to the reaction cavity 2, the sides of the first side screen portions 812 extending from the first horizontal screen portion 811 at the bottom to both ends closest to the reaction cavity 2, the sides of the second horizontal screen portion 821 at the top closest to the reaction cavity 2, and the sides of the second side screen portions 822 extending from the second horizontal screen portion 821 at the top to both ends closest to the reaction cavity 2 are all mirrored. This allows for the reflection of infrared thermal radiation from the heating components (first heating wire 6 and second heating wire 7), improving the heating effect on the upper surface of the wafer.

[0094] A universal ball 33 is installed at the bottom of the reaction cavity 2 near the third heat shield assembly 83. The universal ball 33 is located in the middle of the bottom of the reaction cavity 2 near the third heat shield assembly 83. A support foot 1018 is installed at the bottom of the reaction cavity 2 near the exhaust block 32. The support foot 1018 is located at both ends of the bottom of the reaction cavity 2 near the exhaust block 32. The universal ball 33 and the support foot 1018 pass through the second heat shield assembly 82 and abut against the inner bottom of the reaction outer cavity 1.

[0095] When installing the inner reaction chamber 2, first connect the third heat shield assembly 83 to the inner wall of the outer reaction chamber 1, then connect the fourth heat shield assembly 84 to the exhaust block 32. Next, push the inner reaction chamber 2 into the outer reaction chamber 1. Finally, connect the exhaust block 32 to the exhaust end of the outer reaction chamber 1, so that both sides of the inner reaction chamber 2 abut against the second heat shield 832 and the third heat shield 841, respectively. When disassembling the inner reaction chamber 2, simply remove the exhaust block 32 to take out the inner reaction chamber 2.

[0096] In one implementation, the planar atomic layer deposition apparatus further includes a detachable loading device assembly 10, which includes a support frame 101, a heat insulation block 103, a carrier end cap 104, and a carrier 102 for holding wafers.

[0097] like Figure 3 As shown, the support frame 101 passes through the first exhaust chamber 321 and extends into the interior of the reaction inner cavity 2. The heat insulation block 103 is disposed between the support frame 101 and the carrier end cover 104. A handle 1015 is fixedly disposed on the side of the carrier end cover 104 away from the heat insulation block 103. A telescopic shaft 105 is disposed on the carrier end cover 104. The telescopic shaft 105 is slidably connected to the sliding channel 12 on the reaction outer cavity 1.

[0098] Specifically, such as Figure 3 As shown, a linear bearing 13 is installed in the sliding channel 12, and the telescopic shaft 105 is slidably connected to the linear bearing 13. A positioning protrusion 14 extends inward from the sliding channel 12. A first limiting block 15 is provided on the side of the sliding channel 12 near the carrier end cover 104. The first limiting block 15 is fixedly connected to the reaction outer cavity 1. The linear bearing 13 is located in the sliding channel 12, and both ends of the linear bearing 13 abut against the positioning protrusion 14 and the first limiting block 15, respectively. The telescopic shaft 105 passes through the first limiting block 15 and is slidably connected to the linear bearing 13. A second limiting block 11, which abuts against the positioning protrusion 14, is fixedly connected to the side of the telescopic shaft 105 away from the carrier end cover 104.

[0099] Support shafts 106 are provided at both ends on the side of the support frame 101 away from the heat insulation block 103, such as... Figure 8 As shown, a rolling bearing 107 is installed on the support shaft 106. The rolling bearing 107 abuts against the inner bottom of the reaction chamber 2. Slide plates 1013 are provided at both ends of the bottom of the support frame 101. Mounting seats 1017 corresponding to the slide plates 1013 are provided at both ends of the exhaust block 32 near the end cover 104 of the carrier. Universal balls 33 that are slidably connected to the heat insulation block 103 and the slide plates 1013 are installed on the mounting seats 1017.

[0100] like Figure 8 As shown, the support frame 101 is provided with multiple excavations 108 arranged in a linear distribution, and connecting ribs 109 are provided between the multiple excavations 108. The slide plate 1013 is provided at the bottom of the connecting ribs 109.

[0101] like Figure 8 and Figure 9As shown, the support frame 101 has an inclined portion 1010 near the first guide plate 833. The inclined portion 1010 is inclined upward along the gas flow direction. A guide surface 1011 is connected to the top of the inclined portion 1010. A limiting portion 1012 is provided at the end of the support frame 101 away from the inclined portion 1010. The carrier 102 is placed between the inclined portion 1010 and the limiting portion 1012. Figure 9 As shown, a positioning pin 1016 is provided on the support frame 101 between the inclined part 1010 and the limiting part 1012, and a positioning pin hole that cooperates with the positioning pin 1016 is provided on the carrier 102; a placement groove is provided in the middle of the carrier 102, and a wafer is placed in the placement groove.

[0102] like Figure 8 As shown, sealing handles 1014 are provided at both ends of the outer side of the vehicle end cap 104, and sealing buckles 325 that cooperate with the sealing handles 1014 are provided on the exhaust block 32. Figure 2 and Figure 6 As shown, mounting blocks 326 are fixedly installed at both ends of the exhaust block 32, and sealing buckles 325 are fixedly installed on the mounting blocks 326. The sealing handle 1014 can be engaged with the sealing buckle 325.

[0103] In one implementation, the inner walls of the corresponding connection points of the outer reaction chamber 1, the first guide plate 833, the inner reaction chamber 2, the second guide plate 843, and the first exhaust chamber 321 are flush; the side of the exhaust screen plate 5 near the heat insulation block 103 is flush with the inner wall of the first exhaust chamber 321, and the guide surface 1011, the upper surface of the carrier 102, the upper surface of the wafer, and the upper surface of the limiting part 1012 are flush with the upper surface of the heat insulation block 103; the bottom of the first guide plate 833 is located on the inclined surface of the inclined part 1010, and the guide surface 1011 is located between the upper and lower surfaces of the inner wall of the first guide plate 833.

[0104] In one implementation, the planar atomic layer deposition apparatus further includes: integrated auxiliary components; such as... Figure 2 and Figure 3 As shown, the integrated auxiliary component 9 includes a pressure regulating pipe 91, which is disposed on the outer wall of the reaction outer cavity 1 and connects to the interior of the reaction outer cavity 1.

[0105] like Figure 5 and Figure 6As shown, the second exhaust chamber 322 is also provided with a third through hole 324 connecting to the interior of the outer reaction chamber 1. The third through hole 324 is located near the exhaust pipe port 323. The third through hole 324 connects the space between the outer reaction chamber 1 and the inner reaction chamber 2. The pressure regulating pipe 91 ensures that the pressure between the outer reaction chamber 1 and the inner reaction chamber 2 is always greater than the pressure inside the inner reaction chamber 2, effectively preventing the gaseous precursor from flowing into the space between the outer reaction chamber 1 and the inner reaction chamber 2 during the deposition reaction and causing deposition. The third through hole 324 can effectively control the pressure difference between the outer reaction chamber 1 and the inner reaction chamber 2 and the pressure inside the inner reaction chamber 2, preventing an excessive pressure difference from affecting the airflow of the gaseous precursor.

[0106] In one implementation, the planar atomic layer deposition apparatus also includes integrated auxiliary components; such as... Figure 2 As shown, the integrated auxiliary component 9 includes: a purge intake pipe 92 and a purge exhaust pipe 93; the purge intake pipe 92 and the purge exhaust pipe 93 are disposed on opposite sides of the flared portion 312 and are respectively connected to the flared channel.

[0107] The embodiment of this application provides a planar atomic layer deposition apparatus in which a first heat shield group 81, a second heat shield group 82, a third heat shield group 83, and a fourth heat shield group 84 are wrapped around the heating component and the outer reaction cavity 1. This not only effectively reduces the heat loss of the heating component and improves the stability of the thermal field, but also allows the third heat shield group 83 and the fourth heat shield group 84, together with the universal ball 33 and the support foot 1018 set at the bottom of the inner reaction cavity 2, to facilitate the disassembly and cleaning of the inner reaction cavity 2, thereby improving the overall disassembly and assembly efficiency of the apparatus.

[0108] The upper surface of the carrier 102 is flush with the guide surface 1011, the upper surface of the wafer, the upper surface of the limiting part 1012, and the upper surface of the heat insulation block 103; the side of the exhaust screen plate 5 near the heat insulation block 103 is flush with the inner wall of the first exhaust chamber 321, and the inner walls of the corresponding connection points of the air inlet end of the outer reaction chamber 1, the first guide plate 833, the inner reaction chamber 2, the second guide plate 843, and the first exhaust chamber 321 are flush with each other; the bottom of the first guide plate 833 is located on the inclined surface of the inclined part 1010, and the guide surface 1011 is located between the upper and lower surfaces of the inner wall of the first guide plate 833. In this way, the airflow channel formed between the air inlet end of the outer reaction cavity 1 and the exhaust block 32 can not only effectively control the uniformity of the flow field on the upper surface of the wafer inside the inner reaction cavity 2, but also control the airflow in the air inlet channel 313 through the flow controller 314, so that the flow velocity of the vapor precursor after passing through the inclined part 1010 and the guide surface 1011 is the same as the flow velocity through the exhaust sieve plate 5. This further improves the uniformity of the flow field on the upper surface of the wafer inside the inner reaction cavity 2, while effectively reducing the amount of vapor precursor used, and greatly improving the utilization rate and deposition efficiency of the vapor precursor.

[0109] The working principle of a planar atomic layer deposition apparatus provided in this application embodiment is as follows:

[0110] During operation, firstly, the support frame 101 is pulled outward using handle 1015, and the wafer is placed into the carrier 102 on the support frame 101. Then, the support frame 101 is pushed inward until the carrier end cap 104 and the exhaust block 32 are closed, so that the sealing handle 1014 and the sealing buckle 325 are engaged. Then, the vacuum pump is started to evacuate the interior of the outer reaction chamber 1 and the inner reaction chamber 2 to a vacuum state. Next, inert gas is introduced into the pressure regulating pipe 91 to ensure that the pressure between the outer reaction chamber 1 and the inner reaction chamber 2 under vacuum is greater than the pressure inside the inner reaction chamber 2, so as to avoid the gaseous precursor flowing into the space between the outer reaction chamber 1 and the inner reaction chamber 2 during the deposition reaction and causing deposition contamination. When the outer reaction chamber 1 and the inner reaction chamber 2 are in a vacuum state, and the gas pressure between the outer reaction chamber 1 and the inner reaction chamber 2 is greater than the gas pressure inside the inner reaction chamber 2, the first heating wire 6 and the second heating wire 7 work simultaneously to heat the temperature of the wafer surface to the reaction temperature. Then, the gas phase precursor is pulsed alternately introduced into the gas inlet of the flow controller 314 until a thin film of the specified thickness is grown on the wafer surface. After the reaction stops, the flow controller 314, the first heating wire 6, the second heating wire 7, and the vacuum pump are turned off. The pressure regulating pipe 91 continues to introduce inert gas until the internal gas pressure of the outer reaction chamber 1 and the inner reaction chamber 2 is approximately the same as the external atmospheric pressure of the outer reaction chamber 1. Then, the pressure regulating pipe 91 is turned off, and the sealing handle 1014 and the sealing buckle 325 are opened. The support frame 101 is pulled outward by the handle 1015, and the wafer placed on the carrier 102 is removed, completing the operation. It should be noted that the plasma generator 100, the purge intake pipe 92, and the purge exhaust pipe 93 are in the closed state during operation.

[0111] During cleaning, first remove the carrier 102 from the support frame 101, then push the support frame 101 inward until the carrier end cap 104 covers the exhaust block 32, so that the sealing handle 1014 engages with the sealing buckle 325. Start the vacuum pump to evacuate the interior of the outer reaction chamber 1 and the inner reaction chamber 2 to a vacuum state. Then, introduce inert gas into the pressure regulating pipe 91 to ensure that the pressure between the outer reaction chamber 1 and the inner reaction chamber 2 under vacuum is greater than the pressure inside the inner reaction chamber 2. Turn on the plasma generator 100 and introduce clean gas into the inlet of the plasma generator 100 to clean the inner reaction chamber 2. After the specified time, turn off the plasma generator 100, the vacuum pump, and the pressure regulating pipe 91. Then, open the purge inlet pipe 92 and the purge exhaust pipe 93, and introduce inert gas into the purge inlet pipe 92. After the specified time, close the purge inlet pipe 92 and the purge exhaust pipe 93. Then, open the pressure regulating pipe 91 to introduce inert gas. When the internal pressure of the outer reaction chamber 1 and the inner reaction chamber 2 is approximately the same as the external atmospheric pressure of the outer reaction chamber 1, close the pressure regulating pipe 91 to complete the cleaning process. It should be noted that the first heating wire 6, the second heating wire 7, and the flow controller 314 are in the off state during the cleaning process.

[0112] By applying the technical solution provided in this application, by setting a flared section 312 at the air inlet position, setting multiple air inlet channels 313 at equal intervals on the flared section 312, setting an air inlet screen plate 4 between the flared section 312 and the air inlet end of the outer reaction cavity 1, and setting a first exhaust cavity 321, an exhaust screen plate 5 and a second exhaust cavity 322 connected in sequence at the exhaust position, the vapor precursor can be effectively diffused in the flared section 312 and then uniformly enter the inner reaction cavity 2 through the air inlet screen plate 4, and be uniformly discharged from the inner reaction cavity 2 through the first exhaust cavity 321, the exhaust screen plate 5 and the second exhaust cavity 322 in sequence. This effectively improves the uniformity of the flow field on the upper surface of the wafer in the inner reaction cavity 2, and makes the deposition of the vapor precursor on the upper surface of the wafer uniform.

[0113] The above specific embodiments further illustrate the purpose, technical solution and beneficial effects of this application. It should be understood that the above are only specific embodiments of this application and are not intended to limit the scope of protection of this application. Any modifications, equivalent substitutions, improvements, etc., made on the basis of the technical solution of this application should be included within the scope of protection of this application.

Claims

1. A planar atomic layer deposition apparatus, characterized in that, include: The reaction outer cavity (1), the reaction inner cavity (2) located inside the reaction outer cavity (1), and also includes: a flow field optimization component (3) and a pressure regulating pipe (91), wherein the flow field optimization component (3) includes: a flared block (31) and an exhaust block (32). The flared block (31) includes a guide section (311) and a flared section (312) arranged sequentially along the air intake direction. Multiple air intake channels (313) are equidistantly arranged on the flared section (312). One end of the guide section (311) is connected to the plasma generator (100), and the other end is connected to the flared section (312). The other end of the flared section (312) is connected to the air intake end of the reaction outer cavity (1), and an air intake screen plate (4) is provided between it and the air intake end of the reaction outer cavity (1). Multiple first through holes are equidistantly arranged on the air intake screen plate (4). The exhaust block (32) is connected to the outlet end of the outer reaction chamber (1). The exhaust block (32) is provided with a first exhaust chamber (321) and a second exhaust chamber (322) that are interconnected. The first exhaust chamber (321) is connected to the outlet end of the inner reaction chamber (2). An exhaust sieve plate (5) is provided at the connection between the first exhaust chamber (321) and the second exhaust chamber (322). The exhaust sieve plate (5) is provided with a plurality of second through holes (51). An exhaust pipe port (323) is provided on the second exhaust chamber (322). The pressure regulating pipe (91) is disposed on the outer wall of the outer reaction cavity (1) and is connected to the interior of the outer reaction cavity (1); The second exhaust chamber (322) is also provided with a third through hole (324) that connects to the interior of the reaction outer cavity (1), and the third through hole (324) is located near the exhaust port (323).

2. The apparatus according to claim 1, wherein The flow guide (311) has a flow guide channel inside, and the flared part (312) has a flared channel inside that communicates with the air inlet channel (313). The two ends of the flared channel are inclined outward along the air inlet direction. The plasma generator (100), the flow guide channel, the flared channel, the first through hole and the air inlet end of the reaction outer cavity (1) are connected in sequence.

3. The planar atomic layer deposition apparatus according to claim 1, characterized in that, The second exhaust chamber (322) has an annular layout, and the first exhaust chamber (321) is located within the annular layout of the second exhaust chamber (322); The diameter of the second through hole (51) increases along the exhaust direction, which is the gas flow direction in the second exhaust chamber (322); The exhaust port (323) is located away from the exhaust screen plate (5).

4. A planar atomic layer deposition apparatus according to any one of claims 1-3, characterized in that, A flow controller (314) is provided on the air intake channel (313) to adjust the air intake flow of the air intake channel (313).

5. A planar atomic layer deposition apparatus according to claim 1, characterized in that, It also includes a heating assembly, which includes a first heating wire (6) and a second heating wire (7); The first heating wire (6) is distributed in a serpentine pattern above the outside of the reaction cavity (2), and the gap of the first heating wire (6) decreases along the direction from the flared block (31) to the exhaust block (32); the second heating wire (7) is symmetrically arranged at both ends of the outside of the reaction cavity (2).

6. A planar atomic layer deposition apparatus according to claim 5, characterized in that, A third heat insulation panel (83) is provided between the air inlet end of the outer reaction cavity (1) and the air inlet end of the inner reaction cavity (2). The third heat insulation panel group (83) includes a first heat insulation plate (831) and a second heat insulation plate (832) arranged in parallel. The first heat insulation plate (831) and the second heat insulation plate (832) are connected by a first elastic adjustment member (834). The second heat insulation plate (832) extends out of both sides with a first guide plate (833). The first guide plate (833) passes through the first heat insulation plate (831). The two ends of the first guide plate (833) are respectively connected to the air inlet of the outer reaction cavity (1) and the air inlet of the inner reaction cavity (2). The first elastic adjustment member (834) includes a first adjustment bolt (8341) and a first elastic member (8342). The first elastic member (8342) is disposed between the first heat insulation plate (831) and the second heat insulation plate (832). The first adjustment bolt (8341) passes through the second heat insulation plate (832), the first elastic member (8342) and the first heat insulation plate (831) in sequence and is threadedly connected to the inner wall of the reaction outer cavity (1). The side of the second heat insulation plate (832) closest to the reaction cavity (2) is a mirror surface.

7. A planar atomic layer deposition apparatus according to claim 6, characterized in that, The first heat insulation plate (831) extends an arc-shaped limiting plate (835) along the side where the second heat insulation plate (832) is located, and there is a gap between the arc-shaped limiting plate (835) and the second heat insulation plate (832); The air inlet of the reaction chamber (1) is provided with a first slot that can cooperate with the first guide plate (833). When the arc-shaped limiting plate (835) abuts against the second heat insulation plate (832), the first guide plate (833) abuts against the first slot.

8. A planar atomic layer deposition apparatus according to claim 6, characterized in that, A fourth heat insulation panel (84) is provided between the gas outlet of the reaction cavity (2) and the exhaust block (32). The fourth heat insulation panel (84) includes a third heat insulation plate (841) and a fourth heat insulation plate (842) arranged in parallel. The third heat insulation plate (841) and the fourth heat insulation plate (842) are connected by a second elastic adjusting member (844). The fourth heat insulation plate (842) extends a second guide plate (843) along the side where the gas outlet of the reaction cavity (2) is located. The second guide plate (843) passes through the third heat insulation plate (841), and the two ends of the second guide plate (843) are respectively connected to the gas outlet of the reaction cavity (2) and the first exhaust chamber (321). The second elastic adjusting member (844) includes a second adjusting bolt (8441) and a second elastic member (8442). The second elastic member (8442) is disposed between the third heat insulation plate (841) and the fourth heat insulation plate (842). The second adjusting bolt (8441) passes through the third heat insulation plate (841), the second elastic member (8442) and the fourth heat insulation plate (842) in sequence and is threadedly connected to the inner wall of the exhaust block (32). The side of the third heat insulation plate (841) closest to the reaction cavity is a mirror surface.

9. A planar atomic layer deposition apparatus according to claim 8, characterized in that, The gas outlet of the reaction cavity (2) is provided with a third slot that can cooperate with the second guide plate (843).

10. A planar atomic layer deposition apparatus according to claim 5, characterized in that, A first heat insulation panel (81) and a second heat insulation panel (82) are provided between the heating component and the reaction outer cavity (1). The first heat insulation panel group (81) includes a multi-layer first horizontal panel (811) arranged horizontally. The multi-layer first horizontal panel (811) is integrally connected by a first support column (813). The bottommost first horizontal panel (811) is connected to the outer top of the reaction cavity (2). The two ends of the multi-layer first horizontal panel (811) extend into a first side panel (812) in the vertical direction. The second heat insulation panel group (82) includes a multi-layer second horizontal panel (821) arranged horizontally. The multi-layer second horizontal panel (821) is integrally connected by a second support column (823). The topmost second horizontal panel (821) is connected to the outer bottom of the reaction cavity (2). The two ends of the multi-layer second horizontal panel (821) extend into second side panels (822) in the vertical direction. The first side screen (812) and the second side screen (822) are arranged opposite to each other. A first connecting part is provided between the ends of the first side screen (812) and a second connecting part is provided between the ends of the second side screen (822). The first connecting part and the second connecting part are arranged parallel to each other and are inclined to the adjacent outer wall of the reaction cavity (2). The side of the first horizontal screen (811) at the bottom closest to the reaction cavity (2), the side of the first side screen (812) extending from the first horizontal screen (811) at the bottom to both ends closest to the reaction cavity (2), the side of the second horizontal screen (821) at the top closest to the reaction cavity (2), and the side of the second side screen (822) extending from the second horizontal screen (821) at the top to both ends closest to the reaction cavity (2) are all mirrored.

11. A planar atomic layer deposition apparatus according to claim 8, characterized in that, It also includes a detachable loading device assembly (10), which includes: a support frame (101), a heat insulation block (103), a carrier end cap (104), and a carrier (102) for holding wafers. The support frame (101) passes through the first exhaust chamber (321) and extends into the interior of the reaction inner cavity (2). The heat insulation block (103) is disposed between the support frame (101) and the carrier end cap (104). The carrier end cap (104) is provided with a telescopic shaft (105). The telescopic shaft (105) is slidably connected to the sliding channel (12) on the reaction outer cavity (1). A support shaft (106) is provided on the side of the support frame (101) away from the heat insulation block (103). A rolling bearing (107) is installed on the support shaft (106). The rolling bearing (107) abuts against the inner bottom of the reaction cavity (2). A sliding plate (1013) is provided at the bottom of the support frame (101). A mounting seat (1017) is provided on the side of the exhaust block (32) near the end cover (104) of the carrier. A universal ball (33) that is slidably connected to the heat insulation block (103) and the sliding plate (1013) is installed on the mounting seat (1017). The support frame (101) is provided with a plurality of linearly distributed openings (108), and connecting ribs (109) are provided between the plurality of openings (108). The sliding plate (1013) is provided at the bottom of the connecting ribs (109). The support frame (101) has an inclined part (1010) on the side near the first guide plate (833). The inclined part (1010) is inclined upward along the gas flow direction, and the top of the inclined part (1010) is connected to a guide surface (1011). A limiting part (1012) is provided at one end of the support frame (101) away from the inclined part (1010). The carrier (102) is placed between the inclined part (1010) and the limiting part (1012). A positioning pin (1016) is provided on the support frame (101) between the inclined part (1010) and the limiting part (1012). A positioning pin hole that cooperates with the positioning pin (1016) is provided on the carrier (102). A sealing handle (1014) is provided on the outside of the vehicle end cap (104), and a sealing buckle (325) is provided on the exhaust block (32) to cooperate with the sealing handle (1014).

12. A planar atomic layer deposition apparatus according to claim 11, characterized in that, The inner walls of the air inlet end of the outer reaction chamber (1), the first guide plate (833), the inner reaction chamber (2), the second guide plate (843), and the first exhaust chamber (321) are flush with each other at their corresponding connection points. The side of the exhaust screen plate (5) near the heat insulation block (103) is flush with the inner wall of the first exhaust chamber (321); The guide surface (1011), the upper surface of the carrier (102), the upper surface of the wafer, the upper surface of the limiting part (1012), and the upper surface of the heat insulation block (103) are flush. The bottom of the first guide plate (833) is located on the inclined surface of the inclined portion (1010), and the guide surface (1011) is located between the upper and lower surfaces of the inner wall of the first guide plate (833).

13. A planar atomic layer deposition apparatus according to claim 2, characterized in that, It also includes an integrated auxiliary component; the integrated auxiliary component (9) includes: a purge intake pipe (92) and a purge exhaust pipe (93); the purge intake pipe (92) and the purge exhaust pipe (93) are disposed on opposite sides of the flared portion (312) and are respectively connected to the flared channel.

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