Display device and preparation method thereof

Abstract

The embodiment of the invention relates to display equipment and a preparation method thereof. The display device includes: a substrate; the shading layer is located on one side of the substrate, and the shading layer is provided with a plurality of openings exposing the surface of the substrate; the light-emitting chips are located in the openings of the light shielding layer, and at least one light-emitting chip and the light shielding layer are arranged in a spaced mode. According to the display equipment and the preparation method thereof, by arranging the light shielding layer, it can be ensured that the light shielding layer effectively shields the non-light-emitting area except the light-emitting chip, and the contrast ratio of the display equipment is improved. At least part of the light-emitting chips in the opening of the light shielding layer and the light shielding layer are arranged at intervals, the light-emitting chips can be directly prevented from making contact with the light shielding layer, shielding of the light shielding layer on the side faces of the light-emitting chips is reduced, the top faces of the sides, away from the substrate, of the light-emitting chips cannot be shielded, and therefore the light-emitting chips can have high light emitting efficiency; and the overall display brightness of the display equipment is improved.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a display device and a method for manufacturing the same. Background Technology

[0002] With the continuous advancement of display technology, in order to eliminate stray light and improve screen contrast, display devices will place a black matrix (BM) layer in the non-light-emitting areas. However, the black matrix layer may block the light-emitting chip, thereby affecting the light emission performance of the chip. Summary of the Invention

[0003] Therefore, it is necessary to provide a display device and its manufacturing method to address the aforementioned technical problems.

[0004] In a first aspect, this application provides a display device, comprising:

[0005] substrate;

[0006] A light-shielding layer is located on one side of the substrate, and the light-shielding layer has multiple openings that expose the surface of the substrate;

[0007] Multiple light-emitting chips are located in multiple openings of the light-shielding layer, and at least one light-emitting chip is spaced apart from the light-shielding layer.

[0008] The aforementioned display device and its manufacturing method, by setting a light-shielding layer, can ensure effective blocking of non-light-emitting areas other than the light-emitting chip, thereby improving the contrast and other characteristics of the display device. By spacing at least a portion of the light-emitting chip in the opening of the light-shielding layer from the light-shielding layer, contact between the light-emitting chip and the light-shielding layer can be directly avoided, reducing the shading of the sides of the light-emitting chip by the light-shielding layer, and preventing the shading of the top surface of the light-emitting chip away from the substrate. This allows the light-emitting chip to have higher light extraction efficiency, improving the overall display brightness of the display device.

[0009] In one embodiment, it further includes:

[0010] A dam structure is a circumferentially closed structure disposed on the outside of at least one light-emitting chip on a plane parallel to the substrate to prevent the light-shielding layer from climbing onto the light-emitting chip, and the thickness of the dam structure in the direction perpendicular to the substrate is greater than or equal to the thickness of the light-shielding layer.

[0011] The aforementioned display device and its fabrication method, by setting a dam structure around the substrate, can separate the light-emitting chip from the light-shielding layer, thereby avoiding the light-shielding layer's obstruction and influence on the light-emitting chip, reducing light loss from the light-emitting chip, while ensuring ink color consistency and high luminous efficiency, thus reducing overall power consumption. Based on this, embodiments of this application can flexibly set the thickness of the light-shielding layer to be less than the thickness of the light-emitting chip according to actual needs, without needing to consider avoiding obstruction of the light-emitting chip by reducing the thickness of the light-shielding layer. Moreover, due to the presence of the dam structure, contact between the light-shielding layer and the light-emitting chip can be prevented, thereby simplifying the fabrication process of the light-shielding layer and allowing for methods such as inkjet printing or spraying. Correspondingly, the range of choices for the viscosity and flowability of the light-shielding layer material is greatly increased, allowing for the selection of more economical and faster methods.

[0012] In one embodiment, there are multiple dam structures, with one dam structure corresponding to the exterior of each of the multiple adjacent light-emitting chips.

[0013] In the aforementioned display device and its manufacturing method, the light beams emitted by multiple light-emitting chips in the same pixel are mixed together, thereby enabling the display device to display the desired image. Therefore, a dam structure is provided on the outside of adjacent multiple light-emitting chips to improve the light mixing effect of the light beams emitted by the multiple light-emitting chips in the same pixel.

[0014] In one embodiment, it further includes:

[0015] A first encapsulation layer is disposed on the side of the light-emitting chip and the light-shielding layer away from the substrate, and the projection of the first encapsulation layer in the thickness direction of the display device covers the light-emitting chip and the light-shielding layer.

[0016] In the aforementioned display device and its manufacturing method, the light-emitting chip and the light-shielding layer are not exposed to the first encapsulation layer, thereby achieving sealing of the light-emitting chip and the light-shielding layer, reducing the damage and corrosion caused by moisture, dust, etc. in the environment, and thus improving the reliability of the display device.

[0017] In one embodiment, it further includes:

[0018] The second encapsulation layer is disposed in the opening of the light-shielding layer and is in contact with the light-emitting chip.

[0019] In the aforementioned display device and its manufacturing method, a second encapsulation layer is disposed in an opening of the light-shielding layer and in contact with the light-emitting chip. The second encapsulation layer at least covers the pads on the bottom of the light-emitting chip, thereby protecting the light-emitting chip and improving its reliability.

[0020] In one embodiment, the thickness of the second encapsulation layer is greater than the thickness of the light-shielding layer, and the second encapsulation layer also covers the surface of the light-shielding layer away from the substrate.

[0021] In one embodiment, when the display device includes a dam structure, the thickness of the second encapsulation layer is greater than or equal to the thickness of the dam structure.

[0022] The above-mentioned display device and its preparation method do not require precise control of the amount of adhesive and the preparation position of the second encapsulation layer. The flat distribution of the second encapsulation layer can be achieved by utilizing the self-leveling of the second encapsulation layer.

[0023] In one embodiment, the second encapsulation layer includes an encapsulating adhesive and a black material distributed in the encapsulating adhesive;

[0024] The light transmittance of the second encapsulation layer is greater than that of the light-shielding layer.

[0025] In some high-requirement applications, adding appropriate amounts of black material to the second encapsulation layer in the aforementioned display device and its manufacturing method can reduce the difference in ink color consistency with the light-shielding layer.

[0026] In one embodiment, the refractive index of the second encapsulation layer is greater than that of the first encapsulation layer.

[0027] In the aforementioned display device and its manufacturing method, the refractive index of the first encapsulation layer is less than that of the second encapsulation layer, thereby improving the light coupling efficiency of the light-emitting chip through the combination of the first encapsulation layer and the second encapsulation layer.

[0028] Secondly, this application provides a method for manufacturing a display device, comprising:

[0029] A substrate is provided, and a plurality of light-emitting chips are disposed on one side of the substrate;

[0030] A dam structure is formed; the dam structure is a circumferentially closed structure located outside at least one of the light-emitting chips;

[0031] A light-shielding layer is formed; the light-shielding layer is located outside the dam structure, and the thickness of the light-shielding layer is less than the thickness of the dam structure.

[0032] In the embodiments of the application, a dam structure is set around the substrate, which can separate the light-emitting chip from the light-shielding layer, thereby avoiding the light-shielding layer from obscuring and affecting the light-emitting chip, thus reducing the light loss of the light-emitting chip, while ensuring ink color consistency and high luminous efficiency, and thus reducing the power consumption of the whole device. Based on this, the embodiments of this application can flexibly set the thickness of the light-shielding layer to be less than the thickness of the light-emitting chip according to actual needs, without having to consider avoiding the light-shielding layer from obscuring the light-emitting chip by reducing the thickness of the light-shielding layer. Moreover, due to the existence of the dam structure, the light-shielding layer can be prevented from contacting the light-emitting chip, thereby simplifying the manufacturing process of the light-shielding layer and allowing the use of inkjet or spray methods. Correspondingly, the range of choices for the viscosity and flowability of the light-shielding layer material is greatly increased, and a more economical and faster method can be selected. Attached Figure Description

[0033] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the accompanying drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 One of the cross-sectional schematic diagrams of a display device according to an embodiment;

[0035] Figure 2 This is a cross-sectional schematic diagram of a display device related to the technology;

[0036] Figure 3 This is a top view schematic diagram of a display device according to one embodiment;

[0037] Figure 4 This is a second cross-sectional schematic diagram of a display device according to an embodiment;

[0038] Figure 5 This is a third cross-sectional schematic diagram of a display device according to an embodiment;

[0039] Figure 6 Fourth cross-sectional schematic diagram of a display device according to an embodiment;

[0040] Figure 7 Fifth cross-sectional schematic diagram of a display device according to an embodiment;

[0041] Figure 8 Sixth cross-sectional schematic diagram of a display device according to an embodiment;

[0042] Figure 9 Seventh cross-sectional schematic diagram of a display device according to an embodiment;

[0043] Figure 10Eighth cross-sectional schematic diagram of a display device according to an embodiment;

[0044] Figure 11 A cross-sectional schematic diagram of a display device according to an embodiment;

[0045] Figure 12 This is a cross-sectional schematic diagram of a display device according to an embodiment;

[0046] Figure 13 Eleventh is a cross-sectional schematic diagram of a display device according to an embodiment;

[0047] Figure 14 This is a cross-sectional schematic diagram of a display device according to an embodiment;

[0048] Figure 15 Thirteenth is a cross-sectional schematic diagram of a display device according to an embodiment;

[0049] Figure 16 Fourteenth is a cross-sectional schematic diagram of a display device according to an embodiment;

[0050] Figure 17 Fifteenth schematic cross-sectional view of a display device according to an embodiment;

[0051] Figure 18 Sixteenth cross-sectional schematic diagram of a display device according to an embodiment;

[0052] Figure 19 This is a flowchart illustrating a method for manufacturing a display device according to one embodiment.

[0053] Component marking instructions:

[0054] Substrate: 100; Light-shielding layer: 200; Light-emitting chip: 300; Dam structure: 400; First encapsulation layer: 510; Second encapsulation layer: 520; Functional layer: 600. Detailed Implementation

[0055] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0056] It is understood that the terms "first," "second," etc., used in this application may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of this application, a first encapsulation layer may be referred to as a second encapsulation layer, and similarly, a second encapsulation layer may be referred to as a first encapsulation layer.

[0057] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. "Multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. "Several" means at least one, such as one, two, etc., unless otherwise explicitly specified.

[0058] This application also provides a display device, which can be, but is not limited to, various personal computers, laptops, smartphones, tablets, IoT devices, and portable wearable devices. IoT devices can include smart speakers, smart TVs, smart air conditioners, smart in-vehicle devices, etc. Portable wearable devices can include smartwatches, smart bracelets, head-mounted devices, etc.

[0059] Figure 1 One of the cross-sectional schematic diagrams of a display device according to an embodiment, referenced Figure 1 The display device includes a substrate 100, a light-shielding layer 200, and multiple light-emitting chips 300.

[0060] In this context, substrate 100 refers to the driving substrate 100 of the display device. The driving substrate 100 is used to support and fix the light-emitting chip 300 and to provide driving signals to the light-emitting chip 300. The material of substrate 100 includes, but is not limited to, silicon substrate 100, glass substrate 100, and flexible substrate 100. Silicon substrate 100 can integrate driving circuits and is suitable for display devices including MiniLED and MicroLED. MiniLED and MicroLED can be used as backlight modules of display devices or directly for display. Glass substrate 100 has good light transmittance and is easy to implement in large-size display devices. Flexible substrate 100 is bendable and lightweight, making it suitable for flexible and foldable display devices, such as flexible and foldable MiniLED display devices or MicroLED display devices.

[0061] A light-shielding layer 200 is located on one side of the substrate 100, and the light-shielding layer 200 has multiple openings that expose the surface of the substrate 100. The light-shielding layer 200 exposes the area where the light-emitting chips 300 are located in the display device through these openings, and blocks the non-light-emitting areas in the display device. These non-light-emitting areas include, for example, the gaps between adjacent light-emitting chips 300. It is understood that light leakage or reflection from non-light-emitting areas can cause the displayed image to appear grayish and reduce contrast. Therefore, by providing the light-shielding layer 200, stray light can be absorbed, reducing stray light incident on the human eye, thereby improving the display effect of the display device. Furthermore, depending on the specific arrangement of the openings, if a light-shielding layer 200 is provided between adjacent pixels, the light-shielding layer 200 can also isolate adjacent pixels, reducing crosstalk between adjacent pixels.

[0062] For example, the main material of the light-shielding layer 200 may be, but is not limited to, one or more mixtures of materials such as black fluoride, epoxy adhesive, epoxy resin, silicone, silicone resin, and polyurethane. In order to reduce the light transmittance of the light-shielding layer 200, melanin and / or black powder, such as one or more of black pigment, toner, carbon paste, or scattering powder, may be doped into the main material.

[0063] Multiple light-emitting chips 300 are located in multiple openings of the light-shielding layer 200, and at least one light-emitting chip 300 is spaced apart from the light-shielding layer 200. The light-emitting chip 300 contacts the substrate 100, thereby connecting to the signal traces on the substrate 100, and emits light under the drive of the drive signal transmitted by the signal traces.

[0064] The light-emitting chip 300 includes, but is not limited to, active light-emitting chips 300 such as MiniLED and MicroLED. For ease of explanation, the following text will use MicroLED as an example for the light-emitting chip 300. Compared to Mini LED, MicroLED is much smaller, typically less than 100µm, or even less than 50µm. Therefore, display devices using MicroLED have higher requirements for the fabrication process. Moreover, MicroLED is about 10µm thick; if the light-shielding layer 200 is thick, it is very easy to... Figure 2 The surface is shown to be covered, blocking the sides of the MicroLED, and even blocking the top surface of the MicroLED away from the substrate 100.

[0065] In related technologies, after transferring the MicroLED to the substrate 100 during the fabrication process, a light-shielding layer 200 is typically prepared using processes such as inkjet printing to achieve ink color consistency. However, during inkjet printing, it is necessary to precisely adjust the viscosity, flowability, and thickness of the light-shielding layer 200 so that it does not cover the top surface of the MicroLED on the side away from the substrate 100. This places high demands on the fabrication process of the light-shielding layer 200.

[0066] At least one light-emitting chip 300 is spaced apart from the light-shielding layer 200. This can be a partial arrangement of light-emitting chips 300 and the light-shielding layer 200 in the display device, or it can be that all light-emitting chips 300 in the display device are spaced apart from the light-shielding layer 200. This embodiment does not impose any limitation on this arrangement. Furthermore, an opening in the light-shielding layer 200 can contain either a single light-emitting chip 300 or multiple light-emitting chips 300. When the light-shielding layer 200 includes multiple openings, the arrangement of the light-emitting chips 300 in the multiple openings can be the same or different. This embodiment does not impose any limitation on this arrangement.

[0067] Furthermore, multiple adjacent light-emitting chips 300 can form a single pixel. That is, a pixel can include multiple light-emitting chips 300 with at least partially different emission colors. The light beams emitted by the multiple light-emitting chips 300 in the same pixel mix with each other, thereby enabling the display device to display the desired image. Therefore, multiple light-emitting chips 300 in the same pixel can be disposed in the same opening to improve the light mixing effect of the light beams emitted by the multiple light-emitting chips 300 in the same pixel.

[0068] In the embodiments of the application, by providing a light-shielding layer 200, it is possible to ensure that the light-shielding layer 200 effectively blocks the non-light-emitting areas other than the light-emitting chip 300, thereby improving the contrast and other characteristics of the display device. By spacing at least a portion of the light-emitting chip 300 in the opening of the light-shielding layer 200 from the light-shielding layer 200, contact between the light-emitting chip 300 and the light-shielding layer 200 can be directly avoided, reducing the shading of the sides of the light-emitting chip 300 by the light-shielding layer 200, and preventing the shading of the top surface of the light-emitting chip 300 away from the substrate 100. This allows the light-emitting chip 300 to have higher light extraction efficiency, thereby improving the overall display brightness of the display device.

[0069] Figure 3 This is a top view schematic diagram of a display device according to one embodiment. Figure 4 This is a second cross-sectional schematic diagram of a display device according to an embodiment. Figure 5 This is a third cross-sectional schematic diagram of a display device according to an embodiment. Figure 6 This is a fourth cross-sectional schematic diagram of a display device according to an embodiment, taken in conjunction with reference to... Figures 2 to 6 In some embodiments, the display device further includes a first encapsulation layer 510.

[0070] The first encapsulation layer 510 is disposed on the side of the light-emitting chip 300 and the light-shielding layer 200 away from the substrate 100, and the projection of the first encapsulation layer 510 in the thickness direction of the display device covers the light-emitting chip 300 and the light-shielding layer 200. That is, the light-emitting chip 300 and the light-shielding layer 200 are not exposed to the first encapsulation layer 510, thereby achieving sealing of the light-emitting chip 300 and the light-shielding layer 200, reducing the damage and corrosion caused by moisture, dust and other elements in the environment, and thus improving the reliability of the display device.

[0071] Furthermore, the thickness of the first encapsulation layer 510 is related to the thickness of the light-emitting chip 300 and the light-shielding layer 200, and can be between 5µm and 300µm. For example, the thickness of the first encapsulation layer 510 is 5µm, 10µm, 20µm, 50µm, 80µm, 100µm, 120µm, 150µm, 200µm, 250µm, 300µm, etc. The first encapsulation layer 510 can be prepared by any method such as inkjet printing, spin coating, molding, or film lamination, and this embodiment is not limited to any particular method. The first encapsulation layer 510 has high light transmittance so that the light beam emitted by the light-emitting chip 300 can be emitted to the outside of the first encapsulation layer 510. The material of the first encapsulation layer 510 includes, but is not limited to, at least one of silicone, epoxy resin, polyimide, and photoresist.

[0072] In some embodiments, the first encapsulation layer 510 further includes dispersed scattering particles. The scattering particles can be metal oxide particles with scattering properties, including but not limited to at least one of molybdenum oxide, zirconium oxide, aluminum oxide, antimony oxide, titanium oxide, niobium oxide, yttrium oxide, vanadium oxide, and scandium oxide. The particle size of the scattering particles is related to the emission wavelength of the light-emitting chip 300; specifically, the particle size of the scattering particles is similar to the emission wavelength of the light-emitting chip 300, or the particle size of the scattering particles is smaller than the emission wavelength of the light-emitting chip 300. Specifically, the particle size of the scattering particles is less than 400 nm, for example, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, etc. When the light beam emitted by the light-emitting chip 300 encounters scattering particles with a size similar to or smaller than the emission wavelength, the scattering particles, acting as scattering centers, cause the light beam to undergo multiple reflections and refractions on their surface, changing the direction of light propagation, increasing the propagation path of light in the first encapsulation layer 510, allowing more light to reach the surface of the first encapsulation layer 510 and escape, thereby improving light extraction efficiency.

[0073] In some embodiments, the first encapsulation layer 510 can be a multi-layer transparent structure, and the refractive index of the film layer away from the substrate 100 is lower than that of the film layer near the substrate 100. For example, the first encapsulation layer 510 may include a three-layer transparent structure, such as a transparent structure layer near the substrate 100 with a refractive index of 1.51-1.70, a middle transparent structure layer with a refractive index of 1.71-1.9, and a transparent structure layer away from the substrate 100 with a refractive index of 1.30-1.50. With this configuration, when the light beam is emitted from the light-emitting chip 300 and propagates through the interfaces of adjacent film layers in the first encapsulation layer 510, the difference in refractive index gradually decreases, and the critical angle for total internal reflection increases accordingly. Therefore, total internal reflection is less likely to occur, thereby significantly reducing reflection loss and allowing more light beams to successfully penetrate each of the first encapsulation layers 510.

[0074] In some embodiments, the display device further includes a functional layer 600, which is disposed on the side of the first encapsulation layer 510 away from the substrate 100. The functional layer 600 is used to achieve one or more functions such as anti-glare, anti-reflection, anti-fingerprint, haze, gloss, hardness, and abrasion resistance, and can be implemented by a multilayer film structure. For example, a combination of rough scattering and anti-reflection films can be used to avoid glare from strong light reflection, reduce light reflection loss, and improve light transmittance, thereby achieving anti-glare and anti-reflection functions. Another example is the use of a combination of oleophobic and hydrophobic films with high hardness coatings, which can enhance abrasion resistance, balance cleanliness and durability, and prevent fingerprint residue. Yet another example is the ability to control light scattering and specular reflection by adjusting the microstructure of the film surface to adapt to different usage scenarios, thereby achieving adjustment of haze and gloss. Furthermore, the functional layer 600 can be integrated with the first encapsulation layer 510, meaning the first encapsulation layer 510 performs some of the functions of the functional layer 600, thus reducing the number of film layers required in the display device.

[0075] Figure 7 This is the fifth cross-sectional schematic diagram of a display device according to an embodiment. Figure 8 This is the sixth cross-sectional schematic diagram of a display device according to an embodiment. Figure 9 This is the seventh cross-sectional schematic diagram of a display device according to an embodiment. Figure 10 This is the eighth cross-sectional schematic diagram of a display device according to an embodiment. Figure 11 This is the ninth cross-sectional schematic diagram of a display device according to an embodiment. Figure 12 This is a cross-sectional schematic diagram of a display device according to an embodiment, taken in conjunction with reference to... Figures 7 to 12 In some embodiments, the display device further includes a second encapsulation layer 520.

[0076] The second encapsulation layer 520 is disposed in the opening of the light-shielding layer 200 and in contact with the light-emitting chip 300. The second encapsulation layer 520 at least covers the pads on the bottom of the light-emitting chip 300, thereby protecting the light-emitting chip 300 and improving its reliability. Furthermore, some second encapsulation layers 520 may also have the functions of enhancing heat dissipation and reducing the junction temperature of the light-emitting chip 300.

[0077] The thickness of the second encapsulation layer 520 is related to the size of the light-emitting chip 300. The larger the size of the light-emitting chip 300, the thicker the second encapsulation layer 520. The thickness of the second encapsulation layer 520 can be from 0.5µm to 2µm. In addition, the thickness of the second encapsulation layer 520 is also related to the fabrication process of the light-emitting chip 300. For example, if anisotropic conductive film (ACF) bonding is used, there is no need to set up pads, which can be understood as the height of the pads being zero.

[0078] The second encapsulation layer 520 has high light transmittance, allowing the light beam emitted by the light-emitting chip 300 to exit to the outside of the second encapsulation layer 520. The material of the second encapsulation layer 520 includes, but is not limited to, at least one of silicone, epoxy resin, polyimide, and photoresist. The second encapsulation layer 520 can be formed by inkjet printing or spin coating, etc., and this embodiment is not limited to this method.

[0079] In some embodiments, the refractive index of the second encapsulation layer 520 is less than the refractive index of the chip medium of the light-emitting chip 300. The chip medium of the light-emitting chip 300 can be, but is not limited to, any of GaN, InGaN, SiC, etc. The refractive index of the aforementioned chip medium is 2.3 to 2.8; therefore, the refractive index of the second encapsulation layer 520 can be between 1.3 and 2.3. It is understood that due to the large difference in refractive index between the chip medium and air, total internal reflection is very likely to occur when the light beam is emitted directly, resulting in insufficient light extraction efficiency. In this embodiment, by setting the refractive index of the second encapsulation layer 520 to be between that of air and the chip medium, the light beam can pass through the second encapsulation layer 520 with the intermediate refractive index sequentially when emitted, thereby reducing reflection loss and allowing more light to escape smoothly.

[0080] Reference Figures 7 to 9 In some embodiments, the thickness of the second encapsulation layer 520 is less than the thickness of the light-emitting chip 300. That is, when the light-emitting chip 300 is a MicroLED, the thickness of the second encapsulation layer 520 is less than the thickness of the MicroLED. Using a thinner second encapsulation layer 520 results in less material being used, leading to lower material costs. Furthermore, if the second encapsulation layer 520 is formed using methods such as inkjet printing, reducing its thickness can also increase the fabrication speed of the second encapsulation layer 520. Figure 7 As shown, the thickness of the second encapsulation layer 520 can be equal to the thickness of the light-shielding adhesive layer 200. For example... Figure 8 and Figure 9 As shown, the thickness of the second encapsulation layer 520 may be different from the thickness of the light-shielding adhesive layer 200, for example, the thickness of the second encapsulation layer 520 may be less than the thickness of the light-shielding adhesive layer 200.

[0081] Reference Figures 10 to 12 In some embodiments, the thickness of the second encapsulation layer 520 is greater than the thickness of the light-emitting chip 300. That is, when the light-emitting chip 300 is a MicroLED, the thickness of the second encapsulation layer 520 is greater than the thickness of the MicroLED. Specifically, the greater the thickness of the second encapsulation layer 520, the better the protection effect on the light-emitting chip 300.

[0082] like Figure 10As shown, in some embodiments, the thickness of the second encapsulation layer 520 may be equal to the thickness of the light-shielding adhesive layer 200. For example... Figure 11 and Figure 12 As shown, in some embodiments, the thickness of the second encapsulation layer 520 is greater than the thickness of the light-shielding layer 200, and the second encapsulation layer 520 also covers the surface of the light-shielding layer 200 away from the substrate 100.

[0083] In some embodiments, the second encapsulation layer 520 includes an encapsulating adhesive and a black material distributed within the encapsulating adhesive. The light transmittance of the second encapsulation layer 520 is greater than that of the light-shielding layer 200. It is understood that although the black material absorbs light, causing some light loss, in some demanding applications, a significant difference in ink color consistency between the open and closed areas of the light-shielding layer 200 can affect the display effect of the display device. Therefore, adding a suitable amount of black material to the second encapsulation layer 520 can serve as a transition, reducing the difference in ink color consistency between the area forming the second encapsulation layer 520 and the light-shielding layer 200. It is understood that because the area in the dam structure 400 is small, the amount and adhesion of the second encapsulation layer 520 can be controlled more precisely to reduce the risk of the second encapsulation layer 520 climbing onto the light-emitting chip 300. Moreover, since the light transmittance of the second encapsulation layer 520 itself is greater than that of the light-shielding layer 200, even if the second encapsulation layer 520 partially obstructs the light-emitting chip 300, it is within the acceptable range for the user.

[0084] In some embodiments, the refractive index of the second encapsulation layer is greater than the refractive index of the first encapsulation layer 510. For example, the refractive index of the first encapsulation layer 510 is between 1 and 2, and the refractive index of the second encapsulation layer 520 can be between 1.3 and 2.3. The refractive index of the first encapsulation layer 510 is less than the refractive index of the second encapsulation layer 520, thereby improving the photocoupled efficiency of the light-emitting chip 300 through the combination of the first encapsulation layer 510 and the second encapsulation layer 520.

[0085] In some embodiments, the second encapsulation layer 520 further includes dispersed scattering particles. The scattering particles can be metal oxide particles with scattering properties, including but not limited to at least one of molybdenum oxide, zirconium oxide, aluminum oxide, antimony oxide, titanium oxide, niobium oxide, yttrium oxide, vanadium oxide, and scandium oxide. The particle size of the scattering particles is related to the emission wavelength of the light-emitting chip 300; specifically, the particle size of the scattering particles is similar to the emission wavelength of the light-emitting chip 300, or the particle size of the scattering particles is smaller than the emission wavelength of the light-emitting chip 300. Specifically, the particle size of the scattering particles is less than 400 nm, for example, the particle size is 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, etc. When the light beam emitted by the light-emitting chip 300 encounters scattering particles with a size similar to or smaller than the emission wavelength, the scattering particles, acting as scattering centers, cause the light beam to undergo multiple reflections and refractions on their surface, changing the direction of light propagation, increasing the propagation path of light in the second encapsulation layer 520, allowing more light to reach the surface of the second encapsulation layer 520 and escape, thereby improving light extraction efficiency.

[0086] Figure 13 This is an eleventh cross-sectional schematic diagram of a display device according to an embodiment, with reference to... Figure 13 In some embodiments, the display device further includes a dam structure 400. The dam structure 400 is a circumferentially closed structure disposed on the outside of the light-emitting chip 300 on a plane parallel to the substrate 100, and the thickness of the dam structure 400 in the direction perpendicular to the substrate is greater than or equal to the thickness of the light-shielding layer 200, to prevent the light-shielding layer 200 from climbing onto the light-emitting chip 300. Here, "the light-shielding layer 200 climbing onto the light-emitting chip 300" means that the light-shielding layer blocks the light-emitting surface of the light-emitting chip 300 parallel to the substrate 100. Specifically, the shape of the dam structure 400 can be any of a rectangle, square, circle, etc., and this embodiment is not limited thereto.

[0087] Understandably, in related technologies, to enable the light-shielding layer 200 to achieve self-leveling, its viscosity needs to be relatively low. Since viscosity is positively correlated with the blackness of the light-shielding layer 200, its thickness must be increased if the blackness is insufficient. Simultaneously, to reduce the impact of the light-shielding layer 200 on the light emission of the light-emitting chip 300, the inkjet thickness needs to be precisely controlled to ensure it does not exceed the thickness of the light-emitting chip 300. Furthermore, due to capillary action, the light-shielding layer 200 may wrap around the sides of the light-emitting chip 300, and even partially climb onto the front of the light-emitting chip 300, leading to light emission loss. Therefore, it is difficult to control the thickness of the light-shielding layer 200 precisely in related technologies.

[0088] In the embodiments of the application, a dam structure 400 is provided around the substrate 100, which can separate the light-emitting chip 300 from the light-shielding layer 200, thereby avoiding the light-shielding layer 200 from obscuring and affecting the light-emitting chip 300, thus reducing the light loss of the light-emitting chip 300, while ensuring ink color consistency and high luminous efficiency, thereby reducing the overall power consumption. Based on this, the embodiments of this application can flexibly set the thickness of the light-shielding layer 200 to be less than the thickness of the light-emitting chip 300 according to actual needs, without having to consider avoiding the light-shielding layer 200 from obscuring the light-emitting chip 300 by reducing the thickness of the light-shielding layer 200. Moreover, due to the presence of the dam structure 400, the light-shielding layer 200 can be prevented from contacting the light-emitting chip 300, thereby simplifying the manufacturing process of the light-shielding layer 200 and allowing for the use of inkjet printing or spraying methods. Correspondingly, the range of choices for the viscosity and flowability of the light-shielding layer 200 material is greatly increased, allowing for the selection of more economical and faster methods.

[0089] Figure 14 This is a cross-sectional schematic diagram of a display device according to an embodiment, taken in conjunction with reference to... Figure 13 and Figure 14 In some embodiments, the thickness of the light-shielding layer 200 is less than the thickness of the light-emitting chip 300. That is, when the light-emitting chip 300 is a MicroLED, the thickness of the light-shielding layer 200 is less than the thickness of the MicroLED. Using a thinner light-shielding layer 200 results in less material being used, leading to lower material costs. Moreover, if the light-shielding layer 200 is formed using methods such as inkjet printing, reducing its thickness can also increase the fabrication speed of the light-shielding layer 200.

[0090] Figure 15 This is the thirteenth cross-sectional schematic diagram of a display device according to an embodiment. Figure 16 This is the fourteenth cross-sectional schematic diagram of a display device according to an embodiment. Figure 17 This is a cross-sectional schematic diagram of a display device according to an embodiment. Figure 18 This is a cross-sectional schematic diagram of a display device according to an embodiment, taken in conjunction with reference to... Figures 15 to 18 In some embodiments, the thickness of the light-shielding layer 200 is greater than the thickness of the light-emitting chip 300. That is, when the light-emitting chip 300 is a MicroLED, the thickness of the light-shielding layer 200 is greater than the thickness of the MicroLED. Using a thicker light-shielding layer 200 results in lower transmittance, thus leading to higher contrast and better display performance in the display device.

[0091] In some embodiments, the width of the dam structure 400 is 0.5 μm to 50 μm, for example, 0.5 μm, 1 μm, 2 μm, 5 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, etc. The height of the dam structure 400 is 1 μm to 50 μm, for example, 1 μm, 2 μm, 5 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, etc.

[0092] Furthermore, the dam structure 400 can be fabricated using methods such as piezoelectric inkjet printing, high-precision aerosol printing, ultra-high resolution electrostatic inkjet printing, or photolithography. The material of the dam structure 400 can be a transparent material, including but not limited to silicone, epoxy resin, polyimide, and photoresist. The material of the dam structure 400 can also be a material doped with black pigment; this embodiment is not limited to this. Furthermore, the dam structure 400 can also reflect light, thereby improving the lateral light efficiency of the light-emitting chip 300.

[0093] In some embodiments, there are multiple dam structures 400, with a dam structure 400 corresponding to the exterior of adjacent multiple light-emitting chips 300. Further, the multiple dam structures 400 may be correspondingly arranged with multiple openings in the light-shielding layer 200. Adjacent multiple light-emitting chips 300 can constitute a single pixel. That is, a pixel may include multiple light-emitting chips 300 with at least partially different emission colors. The light beams emitted by the multiple light-emitting chips 300 in the same pixel mix with each other, thereby enabling the display device to display the desired image. Therefore, providing a dam structure 400 corresponding to the exterior of adjacent multiple light-emitting chips 300 can improve the light mixing effect of the light beams emitted by the multiple light-emitting chips 300 in the same pixel.

[0094] Reference Figure 16 and Figure 17 In some embodiments, when the display device includes a dam structure 400, the thickness of the second encapsulation layer 520 is less than or equal to the thickness of the dam structure 400. Using a thinner first encapsulation layer 510 results in less material being used and lower material costs. Furthermore, if the first encapsulation layer 510 is formed using methods such as inkjet printing, reducing its thickness can also increase the fabrication speed of the first encapsulation layer 510.

[0095] refer to Figure 18 In some embodiments, when the display device includes a dam structure 400, the thickness of the second encapsulation layer 520 can be greater than the thickness of the dam structure 400. Based on this, it is not necessary to precisely control the amount of adhesive and the preparation position of the second encapsulation layer 520; the self-leveling property of the second encapsulation layer 520 can be used to achieve a flat distribution.

[0096] This application also provides a method for manufacturing a display device. Figure 19 A flowchart illustrating a method for manufacturing a display device according to an embodiment, with reference to... Figure 19 The method for preparing the display device includes steps 1902 to 1906.

[0097] Step 1902: Provide a substrate 100 and arrange a plurality of light-emitting chips 300 on one side of the substrate 100.

[0098] Step 1904, forming the dam structure 400.

[0099] The dam structure 400 is a circumferentially closed structure disposed outside at least one light-emitting chip 300. The thickness of the dam structure 400 is greater than or equal to the thickness of the light-shielding layer 200. Specifically, the shape of the dam structure 400 can be any of the following: rectangular, square, circular, etc., and this embodiment is not limited thereto.

[0100] Step 1906: Form a light-shielding layer 200.

[0101] The shading layer 200 is located outside the dam structure 400, and the thickness of the shading layer 200 is less than the thickness of the dam structure 400.

[0102] Understandably, in related technologies, to enable the light-shielding layer 200 to achieve self-leveling, its viscosity needs to be relatively low. Since viscosity is positively correlated with the blackness of the light-shielding layer 200, its thickness must be increased if the blackness is insufficient. Simultaneously, to reduce the impact of the light-shielding layer 200 on the light emission of the light-emitting chip 300, the inkjet thickness needs to be precisely controlled to ensure it does not exceed the thickness of the light-emitting chip 300. Furthermore, due to capillary action, the light-shielding layer 200 may wrap around the sides of the light-emitting chip 300, and even partially climb onto the front of the light-emitting chip 300, leading to light emission loss. Therefore, it is difficult to control the thickness of the light-shielding layer 200 precisely in related technologies.

[0103] In the embodiments of the application, a dam structure 400 is provided around the substrate 100, which can separate the light-emitting chip 300 from the light-shielding layer 200, thereby avoiding the light-shielding layer 200 from obscuring and affecting the light-emitting chip 300, thus reducing the light loss of the light-emitting chip 300, while ensuring ink color consistency and high luminous efficiency, thereby reducing the overall power consumption. Based on this, the embodiments of this application can flexibly set the thickness of the light-shielding layer 200 to be less than the thickness of the light-emitting chip 300 according to actual needs, without having to consider avoiding the light-shielding layer 200 from obscuring the light-emitting chip 300 by reducing the thickness of the light-shielding layer 200. Moreover, due to the presence of the dam structure 400, the light-shielding layer 200 can be prevented from contacting the light-emitting chip 300, thereby simplifying the manufacturing process of the light-shielding layer 200 and allowing for the use of inkjet printing or spraying methods. Correspondingly, the range of choices for the viscosity and flowability of the light-shielding layer 200 material is greatly increased, allowing for the selection of more economical and faster methods.

[0104] In some embodiments, the method for manufacturing a display device further includes forming a first encapsulation layer 510. The first encapsulation layer 510 is disposed on the side of the light-emitting chip 300 and the light-shielding layer 200 away from the substrate 100, and the projection of the first encapsulation layer 510 in the thickness direction of the display device covers the light-emitting chip 300 and the light-shielding layer 200. That is, the light-emitting chip 300 and the light-shielding layer 200 are not exposed to the first encapsulation layer 510, thereby achieving a seal between the light-emitting chip 300 and the light-shielding layer 200, reducing damage and corrosion from moisture, dust, etc., in the environment, and thus improving the reliability of the display device.

[0105] In some embodiments, before forming the first encapsulation layer 510, the method further includes forming a second encapsulation layer 520. The second encapsulation layer 520 at least covers the pads on the bottom of the light-emitting chip 300, thereby protecting the light-emitting chip 300 and improving its reliability. Furthermore, some second encapsulation layers 520 may also have the functions of enhancing heat dissipation and reducing the junction temperature of the light-emitting chip 300.

[0106] In some embodiments, before step 510 of the first encapsulation layer, the method further includes removing the dam structure 400. By removing the dam structure 400, the absorption of the light beam emitted by the light-emitting chip 300 by the dam structure 400 can be reduced, thereby improving the light extraction efficiency.

[0107] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0108] The above embodiments merely illustrate several implementation methods of the embodiments of this application, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the embodiments of this application, and these all fall within the protection scope of the embodiments of this application. Therefore, the protection scope of the patent for the embodiments of this application should be determined by the appended claims.

Claims

1. A display device, characterized in that, include: substrate; A light-shielding layer is located on one side of the substrate, and the light-shielding layer has multiple openings that expose the surface of the substrate; Multiple light-emitting chips are located in multiple openings of the light-shielding layer, and at least one light-emitting chip is spaced apart from the light-shielding layer.

2. The display device according to claim 1, characterized in that, Also includes: A dam structure is a circumferentially closed structure disposed on the outside of the light-emitting chip on a plane parallel to the substrate to prevent the light-shielding layer from climbing onto the light-emitting chip, and the thickness of the dam structure in the direction perpendicular to the substrate is greater than or equal to the thickness of the light-shielding layer.

3. The display device according to claim 2, characterized in that, The number of the dam structures is multiple, and a dam structure is provided on the outside of each of the multiple adjacent light-emitting chips.

4. The display device according to any one of claims 1 to 3, characterized in that, Also includes: A first encapsulation layer is disposed on the side of the light-emitting chip and the light-shielding layer away from the substrate, and the projection of the first encapsulation layer in the thickness direction of the display device covers the light-emitting chip and the light-shielding layer.

5. The display device according to claim 4, characterized in that, Also includes: The second encapsulation layer is disposed in the opening of the light-shielding layer and is in contact with the light-emitting chip.

6. The display device according to claim 5, characterized in that, The thickness of the second encapsulation layer is greater than the thickness of the light-shielding layer, and the second encapsulation layer also covers the surface of the light-shielding layer away from the substrate.

7. The display device according to claim 5, characterized in that, In the case where the display device includes a dam structure, the thickness of the second encapsulation layer is greater than or equal to the thickness of the dam structure.

8. The display device according to claim 5, characterized in that, The second encapsulation layer includes an encapsulating adhesive and a black material distributed in the encapsulating adhesive; The light transmittance of the second encapsulation layer is greater than that of the light-shielding layer.

9. The display device according to claim 5, characterized in that, The refractive index of the second encapsulation layer is greater than that of the first encapsulation layer.

10. A method for manufacturing a display device, characterized in that, include: A substrate is provided, and a plurality of light-emitting chips are disposed on one side of the substrate; Forming a dam structure; The dam structure is a circumferentially closed structure located outside at least one of the light-emitting chips; Form a light-blocking layer; The light-shielding layer is located outside the dam structure, and the thickness of the light-shielding layer is less than the thickness of the dam structure.

Images