Laser activated transfer process for pre-lithiation and lithium metal anode fabrication

Abstract

A method and apparatus for forming a device stack of an energy storage device including an alkali metal or alloy anode and a pre-lithiated anode is described herein. The method includes laminating an alkali metal or alloy layer to a flexible substrate stack. The alkali metal or alloy layer is formed on the flexible support layer stack. The flexible support layer stack includes a polymeric substrate. The alkali metal or alloy layer is formed over the front side of the polymer substrate. The method further includes patterning the alkali metal or alloy layer by exposing portions of the alkali metal or alloy layer to one or more lasers. The method further includes transferring the exposed portion of the alkali metal or alloy layer from the flexible support layer stack into the flexible substrate stack. The flexible substrate stack includes a current collector or a spacer layer.

Description

Technical Field

[0001] This disclosure generally relates to alkali metal-containing devices and methods for manufacturing alkali metal-containing devices. More specifically, this disclosure relates to energy storage device stacks including alkali metal or alloy anodes and pre-lithiated anodes, and methods for manufacturing the same. Background Technology

[0002] Rechargeable electrochemical energy storage systems are becoming increasingly important in many areas of daily life. High-capacity electrochemical energy storage devices, such as lithium-ion (Li-ion) batteries, are being used in a growing number of applications, including portable electronics, medical, transportation, grid-connected large-scale energy storage, renewable energy storage, and uninterruptible power supplies (UPS). Traditional lead / sulfuric acid batteries often lack capacity and are often inadequate in terms of cycle life for these growing applications. However, lithium-ion batteries are considered to offer the best solution.

[0003] Therefore, there is an increasing need for deposition and processing methods and systems for alkali metals or alloys used in energy storage devices. Summary of the Invention

[0004] This disclosure generally relates to alkali metal devices and methods for manufacturing alkali metal devices. More specifically, this disclosure relates to energy storage device stacks including alkali metal anodes and pre-lithiated anodes, and methods for manufacturing the same.

[0005] In one aspect, a method for forming a membrane stack of an energy storage device is provided. The method includes laminating an alkali metal or alloy layer onto a flexible substrate stack. The alkali metal or alloy layer is formed on a flexible support layer stack. The flexible support layer stack includes a polymer substrate. The alkali metal or alloy layer is formed over the front side of the polymer substrate. The method further includes patterning the alkali metal or alloy layer by exposing portions of the alkali metal or alloy layer to one or more lasers. The method further includes transferring the exposed portions of the alkali metal or alloy layer from the flexible support layer stack to the flexible substrate stack. The flexible substrate stack includes a current collector or a separator layer.

[0006] The implementation may include one or more of the following: One or more lasers are directed through the back side of a polymer substrate. A portion of an alkali metal or alloy layer is exposed to one or more lasers to create void volumes between the alkali metal or alloy layer and the flexible support layer stack. The method further includes heating the alkali metal or alloy layer prior to patterning it. Laminating the alkali metal or alloy layer to the flexible substrate stack includes applying pressure to one or more of the flexible substrate stack and the flexible support layer stack. The flexible support layer stack further includes a release layer formed between the flexible support layer and the alkali metal or alloy layer. The release layer comprises a polymer material capable of photo-induced depolymerization. The polymer substrate is a roll-based polymer substrate, and the current collector or separator layer is also a roll-based substrate.

[0007] In another aspect, a method for forming a membrane stack of an energy storage device is provided. The method includes patterning an alkali metal or alloy layer by exposing portions of the alkali metal or alloy layer to one or more lasers. The alkali metal or alloy layer is formed on a flexible support layer stack. The flexible support layer stack includes a polymer substrate, and the alkali metal or alloy layer is formed on the front side of the polymer substrate. The method further includes removing the exposed portion of the alkali metal or alloy layer by transferring it from the flexible support layer stack to a dummy substrate. The unexposed portion of the alkali metal or alloy layer forms a patterned alkali metal or alloy layer. The method further includes laminating the patterned alkali metal or alloy layer to a flexible substrate stack. The flexible substrate stack includes a current collector or a separator layer. The method further includes separating the patterned alkali metal or alloy layer from the flexible support layer stack.

[0008] The implementation may include one or more of the following: One or more lasers are directed through the back side of a polymer substrate. A portion of an alkali metal or alloy layer is exposed to one or more lasers to create void volumes between the alkali metal or alloy layer and the flexible support layer stack. The method further includes heating the alkali metal or alloy layer prior to patterning it. Laminating the alkali metal or alloy layer to the flexible substrate stack includes applying pressure to one or more of the flexible substrate stack and the flexible support layer stack. The flexible support layer stack further includes a release layer formed between the flexible support layer and the alkali metal or alloy layer. This release layer comprises a polymer material capable of photo-induced depolymerization. The polymer substrate is a roll-based polymer substrate, and the current collector or separator layer is also a roll-based substrate.

[0009] In another aspect, a method for forming a membrane stack of an energy storage device is provided. The method includes laminating an alkali metal or alloy layer onto a flexible substrate stack. The alkali metal or alloy layer is formed on a flexible support layer stack. The flexible support layer stack includes a polymer substrate, and the alkali metal or alloy layer is formed on the front side of the polymer substrate. The method further includes patterning the alkali metal or alloy layer by exposing portions of the alkali metal or alloy layer to one or more lasers, while applying pressure to one or more of the flexible substrate stack and the flexible support layer stack. The method further includes transferring the exposed portions of the alkali metal or alloy layer from the flexible support layer stack to the flexible substrate stack, wherein the flexible substrate stack includes a current collector or a separator layer.

[0010] The implementation may include one or more of the following: One or more lasers are directed through the back side of a polymer substrate. A portion of an alkali metal or alloy layer is exposed to one or more lasers to create void volumes between the alkali metal or alloy layer and the flexible support layer stack. The method further includes heating the alkali metal or alloy layer prior to patterning it.

[0011] In another aspect, there are non-transitory computer-readable medium storage instructions that, when executed by the processor, cause the process to perform the operations of the aforementioned apparatus and / or methods. Attached Figure Description

[0012] To gain a more detailed understanding of the features described above in this disclosure, reference can be made to the implementations briefly outlined above, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only typical implementations of this disclosure and should therefore not be construed as limiting the scope of this disclosure, as other equally effective embodiments are permissible.

[0013] Figure 1 A flowchart illustrating selected operations of a method for manufacturing an energy storage device according to one or more implementations of this disclosure is provided.

[0014] Figure 2A-2G Examples of one or more implementations of this disclosure are illustrated. Figure 1 The method is used to create views of each stage of an energy storage device.

[0015] Figure 3 A flowchart illustrating selected operations of another method for forming an energy storage device according to one or more implementations of this disclosure is provided.

[0016] Figure 4A-4G Examples of one or more implementations of this disclosure are illustrated. Figure 3 The method is used to create views of each stage of an energy storage device.

[0017] Figure 5 A flowchart illustrating selected operations of another method for forming an energy storage device according to one or more implementations of the present disclosure is provided.

[0018] Figures 6A-6E Based on one or more implementations of this disclosure, examples are illustrated. Figure 5 The method is used to create views of each stage of an energy storage device.

[0019] Figure 7 A schematic diagram of a flexible substrate coating apparatus according to one or more implementations of the present disclosure is illustrated.

[0020] Figure 8 A schematic diagram of a lamination transfer device according to one or more implementations of this disclosure is illustrated.

[0021] Figure 9A A schematic side view of a lamination apparatus according to one or more implementations of this disclosure is shown.

[0022] Figure 9B This is an image of an example laminating device according to one or more implementations of this disclosure.

[0023] Figure 10 It is an image of a lithium pattern transferred onto a graphite anode according to one or more implementations of this disclosure.

[0024] For ease of understanding, common elements across the figures have been indicated using the same element symbols where possible. It is envisioned that elements and features of one implementation can be beneficially incorporated into other implementations without further description. Detailed Implementation

[0025] This disclosure generally relates to alkali metal-containing devices and methods for manufacturing such devices. More particularly, this disclosure relates to device stacks including alkali metal or alloy anodes and pre-lithiated anodes, and methods for manufacturing such device stacks.

[0026] Substrate Independent Direct Transfer (SIDT) is a method of forming an anode device stack by transferring one or more layers, including an alkali metal layer or an alkali metal-containing layer (e.g., an alkali metal or alloy layer), to a substrate stack (e.g., a current collector), in implementations where the alkali metal or alloy is used as the anode, or in implementations for pre-lithiation of anode material already formed on the current collector. The alkali metal or alloy includes alkali metals such as lithium metal, sodium, potassium, rubidium, cesium, francium, and alloys or combinations thereof including the alkali metal. The anode material already formed may include, or can be, but is not limited to, graphite, silicon, graphite silica, graphite silica, silicon, tin, hard carbon, metal oxides, or combinations thereof. The current collector may include, or can be, metallized plastic, copper, or combinations thereof. In the SIDT process, lithium is formed over a flexible support layer stack made of one or more materials, such as a polymer substrate, e.g., polyethylene terephthalate (PET), paper, or combinations thereof. The material formed on the flexible support layer stack is directly transferred to the substrate stack. The substrate stack may include or may be a current collector, a current collector having an anode material formed thereon, a metallized plastic substrate, a separator layer, or a metallized plastic substrate having lithium formed thereon. If a release layer is present, it is formed between the alkali metal layer and the flexible support layer stack, and allows lithium and other materials to detach from the support layer stack and transfer to the current collector or anode material (if already present). The release layer may be selected from fluorocarbons, silicones, latexes, AlO₂, etc. x One or more of LiF, AlOOH, Ag, AgF, Bi, Zn, Mg, Sn, or metal halides.

[0027] However, transferring alkali metal or alloy layers from flexible support layer stacks to current collectors or anode materials presents several challenges. For example, after SIDT, trace amounts of material, such as release layers, remain on the lithium surface of the formed film stack. Such release layer materials are often incompatible with end-use applications such as electrochemical devices because they can impede ion or electron transport. That is, the chemistry of the release layer may be incompatible with the final device, such as an energy storage device. For example, undesirable reactions of the release layer with gases (such as H2O, O2, N2, etc.) during handling, transportation, and subsequent integration can affect device integration. Therefore, SIDT is not used in the battery and capacitor industry, as well as other industries that require high-quality alkali metal films suitable for device integration.

[0028] In one or more implementations that can be combined with other implementations, a system and method are provided for transferring patterned lithium to a substrate stack, including one or more of Si-Gr, SiOx-Gr, graphite anode, Cu substrate, or metallized plastic substrate, by utilizing a laser. In one or more implementations, an infrared fiber laser is used to activate the PET-Li interface from the PET side and transfer patterned lithium to the substrate stack. In one or more implementations that can be combined with other implementations, a lithium-compatible material, such as a fluorocarbon compound, is formed on an alkali metal or alloy and exposed to a laser to form an electrochemically stable Li-F, which serves as a surface protective layer.

[0029] In one or more implementations that can be combined with other implementations, the described laser activation process can be incorporated into a roll-to-roll tool and used in a roll-to-roll process. The laser activation process enables patterned lithium to transfer from a plastic substrate to a roll-to-roll battery anode substrate by exposing the interface (e.g., a Li-PET interface) between the alkali metal or alloy layer and the flexible support layer stack to a laser, at which the laser induces lithium transfer. This interface between the alkali metal or alloy layer and the flexible support layer stack may also include a release layer as described.

[0030] In one or more implementations that can be combined with other implementations, the laser activation process enables lithium to be patterned. For example, lithium can be patterned to match the pattern of the anode material in a pre-lithiation process, such as strip coating, skip coating, and can also be patterned directly onto the current collector. Any suitable pattern can be achieved, such as squares, triangles, circles, etc.

[0031] In one or more implementations that can be combined with other implementations, the laser activation process can use a laser source to generate an interfacial reaction between the release layer, the interface layer, or the release layer and the interface layer between the alkali metal or alloy layer and the flexible support layer (e.g., PET) to (a) form an SEI layer in the electrode structure after SIDT, and / or (b) form a lithium surface protection layer to facilitate handling / transportation and integration of the lithium film in the manufacturing environment.

[0032] In one or more implementations that can be combined with other implementations, an infrared fiber laser is used to laser-activate and peel off a PET substrate having a lithium layer (e.g., a 20 μm lithium layer) and a silicone release layer. In one example, the infrared fiber laser is a 1060-nm laser with a pulse width of 5 to 500 nanoseconds, such as a 30 nanosecond pulse width, a Gaussian profile, a spot size of approximately 150 μm, a scan speed of 2 m / sec, and a line spacing of 70 μm.

[0033] In one or more implementations that can be combined with other implementations, a flexible support layer stack is provided. The flexible support layer stack may include a plastic substrate, such as a polyethylene terephthalate (PET) substrate. The flexible support layer stack may further include a release layer formed on the flexible support layer stack, such as a silicone or other deposited release layer. An alkali metal layer (e.g., an alkali metal or alloy layer) is formed above the flexible support layer stack. In implementations without a release layer, the alkali metal or alloy layer may be formed directly on the plastic substrate. In implementations with a release layer, the alkali metal or alloy layer may be formed directly on the release layer. The flexible support layer stack with the alkali metal or alloy layer formed thereon is exposed to a laser activation process. In one or more implementations, during the laser activation process, a laser is directed through the flexible support layer stack to activate the interface between the alkali metal or alloy layer and the flexible support layer stack, such as a Li-PET interface. The laser may be directed through the back side of the flexible support layer stack, for example, from the plastic substrate or PET side. Exposure to the laser can induce a lithium transfer process, thereby creating a void volume between the alkali metal or alloy layer and the flexible support layer stack. This void volume facilitates easier separation of the alkali metal or alloy layer from the flexible support layer during transfer from the flexible support layer stack to the current collector. Furthermore, precise laser beam positioning control allows for the selective transfer of the alkali metal or alloy from the flexible support layer stack into a desired shape onto the substrate stack, forming anode device stacks of various shapes. Additionally, laser exposure can be used to pattern the alkali metal or alloy layer, enabling the precise transfer of the alkali metal or alloy pattern from the flexible support layer stack to the substrate stack to form the anode device stack. The cathode structure and / or separator layer can be integrated with the formed anode device stack to form an energy storage device.

[0034] It should be noted that while some of the implementations described herein are not limited to any particular substrate on which they can be implemented, it is particularly advantageous to implement these implementations on flexible substrates, including, for example, roll-based substrates, panels, and discrete sheets. Flexible substrates may also exist in the form of foils, polymer films, or sheets.

[0035] It should also be noted that the flexible substrates or rolls used in the implementations described herein are generally characterized as bendable. The term "roll" may be used synonymously with the terms "strip," "flexible substrate," or "flexible conductive substrate." For example, the rolls described in the implementations herein may be polymer materials.

[0036] It should also be noted that the described methods and systems can be used to form single-sided electrode structures and double-sided electrode structures.

[0037] Figure 1 A flowchart illustrating a method 100 for manufacturing an energy storage device according to one or more implementations of this disclosure. Figures 2A to 2GViews illustrating various stages of manufacturing an energy storage device according to one or more implementations of this disclosure. Although Figures 2A to 2G It is described in conjunction with method 100, but it should be understood that... Figures 2A to 2G The structure disclosed herein is not limited to method 100, but can exist independently of method 100. Similarly, although method 100 is combined with... Figures 2A to 2G The method described is, but it should be understood, not limited to, method 100. Figures 2A to 2G The structure is not publicly available, but can be independent of... Figures 2A to 2G The publicly disclosed structure exists independently. It should be understood that... Figures 2A to 2G Only a partial schematic diagram of the energy storage device structure is shown, and the energy storage device structure may include any number of additional layers and / or additional materials common to energy storage devices, which are not shown for simplicity. It should also be noted that, although... Figure 1 The method 100 illustrated herein is described sequentially, but includes one or more operations that have been omitted and / or added, and / or other process sequences rearranged in another desired order, all of which fall within the scope of the implementation of this disclosure provided herein.

[0038] refer to Figure 2A At operation 110, a flexible support layer stack 202 is provided. The flexible support layer stack 202 includes a flexible support layer 210. The flexible support layer 210 has a front side 210f (also referred to as a front surface) and a back side 210b (also referred to as a rear surface) opposite the front side 210f. The flexible support layer 210 may include any suitable material compatible with the target processing conditions. In some implementations, the flexible support layer 210 includes multiple sublayers. In one or more implementations that can be combined with other implementations, the flexible support layer 210 may be or include one or more layers selected from plastics, polymeric materials, metallized plastics, metals, paper, multilayers thereof, or combinations thereof. Suitable polymeric materials include those that are laser-transparent and have low or no photon absorption to prevent overheating and ignition events. Examples of suitable polymeric materials include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI), polymethyl methacrylate (PMMA), cellulose triacetate (TAC), polypropylene (PP), polyethylene (PE), polycarbonate (PC), biodegradable polymers such as polyethylene 2,5-furandicarboxylate (PEF), multilayers thereof, or combinations thereof. In one or more implementations that can be combined with other implementations, the flexible support layer 210 is a roll-based substrate.

[0039] In one or more implementations that can be combined with other implementations, the thickness of the flexible support layer 210 is in the range of about 1 micrometer to about 100 micrometers, or in the range of about 1 micrometer to about 100 micrometers, or in the range of about 10 micrometers to about 50 micrometers, or in the range of about 25 micrometers to about 50 micrometers.

[0040] The flexible support layer stack 202 may further include a release layer 220. For example... Figure 2A As shown, a release layer 220 may be formed on the front side 210f of the flexible support layer 210. The release layer 220 has a front side 220f (also referred to as a front surface) and a back side 220b (also referred to as a rear surface) opposite the front side 220f. In one or more implementations, the release layer 220 is deposited on the front side 210f of the flexible support layer 210 such that the back side 220b of the release layer 220 contacts the front side 210f of the flexible support layer 210. The release layer 220 can be formed on the front side of the flexible support layer 210 using any suitable process. The release layer 220 can be deposited using a non-vacuum coating technique, such as a coating technique performed in the atmosphere. In one or more implementations that can be combined with other implementations, the release layer 220 and the flexible support layer 210 are prefabricated.

[0041] Release layer 220 may be or include any material suitable for releasing subsequently formed material from flexible support layer 210 during the SIDT process. Release layer 220 may be or include a polymer release layer (e.g., plastic, silicone, polymethyl methacrylate (PMA), polyethylene terephthalate (PET), fluorocarbons, polyvinylidene fluoride (PVDF), polytetrafluoroethylene (PTFE), etc.), poly(olefin sulfone), organic materials, inorganic materials, etc. In some implementations that can be combined with other implementations, release layer 220 includes one or more nanosheets, such as one or more two-dimensional (2D) materials. In one or more implementations that can be combined with other implementations, the thickness of the release layer is from about 1 nm to about 500 nm, such as from about 10 nm to about 300 nm, such as from about 50 nm to about 200 nm. In some implementations, the release layer includes multiple sublayers, each with a thickness of about 5 nm or less. The release layer may also be an engineered polymer tailored for high laser absorption. Optionally, the laser-absorbing material can also be patterned on top of the plastic substrate, with or without a release layer, for areas where the alkali metal or alloy is to be transferred and areas where it is not to be transferred, to produce the desired pattern transfer.

[0042] Organic or polymer-based release layers can be deposited using wet chemical coating processes, such as slot die coating, comma blade coating, or gravure coating, or vacuum deposition as described.

[0043] The release layer 220 may be or include inorganic materials, such as BN, AlOx AlOOH, Al, or combinations thereof. In a particular implementation, the release layer 220 comprises a multilayer structure, such as Al / AlO. x The AlOOH multilayer structure. The inorganic-based exfoliated layer can be deposited using vapor deposition techniques, such as PVD techniques like sputtering deposition and electron beam deposition.

[0044] In one or more implementations, the polymer material of the flexible support layer and / or release layer 220 is selected such that the SIDT stack can be detached from the flexible support layer 210 by photo-induced peeling, such as a laser peeling process, wherein the polymer material interacts with photons incident from the flexible support layer 210, as described below. While not wishing to be bound by theory, it is believed that laser photons are selectively absorbed at the interface of the lithium / flexible support layer stack 202, for example at the lithium / polyethylene terephthalate (PET) interface, and minimal laser reflection is expected. Using the selective laser activation process described below, this interface can locally generate gas / plasma or initiate chemical reactions to create density changes, thereby producing a “gap” that facilitates peeling. For example, during a laser peeling process, a laser beam passing through a transparent material (e.g., a PET substrate) is absorbed by an opaque material (e.g., lithium), generating plasma, resulting in high-pressure gas and causing interfacial separation between the transparent and opaque materials. Simultaneously, the released opaque layer (e.g., the lithium layer) can adhere to the surface of the anode material or the current collector due to the high-pressure gas. The plasma can be maintained for a very short time, such as about the duration of a pulse, before gradually stabilizing into gas or particles.

[0045] In one or more implementations, the release layer 220 may be or comprise a polymeric material capable of photoinduced depolymerization. In one or more implementations, the polymeric material may be or comprise a poly(olefin sulfone) material capable of photoinduced depolymerization. The poly(olefin sulfone) may be combined with a photoalkali generator (PBG). The poly(olefin sulfone) may be doped with a photosensitizer, such as pyridine N-oxide. The depolymerization process may be initiated by, for example, X-ray, electron beam irradiation, or low-energy irradiation. Suitable poly(olefin sulfone) materials include poly(1-butene sulfone) (PBS), poly(1-pentene sulfone) (PPS), poly(1-hexene sulfone) (PHS), poly(1-octene sulfone) (POS), poly(cyclopentene sulfone), poly(2-methyl-1-butene sulfone) (PMBS), poly(2-methyl-1-pentene sulfone) (PMPS), poly(2-methyl-1-hexene sulfone) (PMHS), poly(2-methyl-1-nonene sulfone) (PMNS), poly(cyclohexene sulfone), or combinations thereof.

[0046] As used herein, "two-dimensional material" refers to an atomically thin crystalline solid having a single-layer or few-layer structure. In some implementations, the two-dimensional material described herein has intralayer covalent bonds and interlayer van der Waals bonds. In some implementations, the two-dimensional material may possess properties selected from: high carrier mobility, superconductivity, mechanical flexibility, high thermal conductivity, high optical and ultraviolet absorption, peel strength of approximately 3 to approximately 100 gf / inch on silicone, weak interlayer bonding, and combinations thereof. This peel strength can be measured using TESA 7475 test tape with a width of 25 mm and at a peel angle of 180° and a peel speed of 300 mm / min (3M method). Not wishing to be bound by theory, it is believed that selecting a two-dimensional material with weak interlayer bonding facilitates the subsequent peeling of the release layer from the support layer. In some implementations, each layer of the flexible support layer stack 202 may have a melting point higher than the melting point of the alkali metal or alloy layer 230°.

[0047] In one or more implementations, each layer may have an equal melting point and / or a melting point that decreases with the addition of each layer, such that the flexible support layer 210 has the highest melting point, the release layer 220 has a lower melting point than the flexible support layer 210, and the alkali metal or alloy layer 230 has the lowest melting point. In one or more implementations, the two-dimensional material includes one or more of titanium disulfide (TiS2), tungsten disulfide (WS2), molybdenum disulfide (MoS2), boron nitride (BN), aluminum hydroxide (AlHO2), MoO3, layered double hydroxides, graphene, carbon nitride, layered double hydroxides, their derivatives, or combinations thereof. In some implementations, the two-dimensional material includes metal nitrides, metal sulfides, metal hydroxide oxides, carbon-containing materials, their derivatives, or combinations thereof.

[0048] refer to Figure 2A An alkali metal layer (e.g., an alkali metal or alloy layer 230) is formed over the front side 220f of the release layer 220 (if present). The alkali metal or alloy layer 230 includes the front side 230f (also referred to as the front surface) and a back side 230b (also referred to as the rear surface) opposite the front side 230f. In one or more implementations, where the release layer 220 is present, the alkali metal or alloy layer 230 may be formed directly on the release layer 220. In one or more implementations, such as Figure 2A As shown, the alkali metal or alloy layer 230 is formed directly on the front side 220f of the release layer 220. The alkali metal or alloy layer 230 may be or include lithium. The alkali metal or alloy layer 230 can be deposited under vacuum. The alkali metal or alloy layer 230 can be deposited under vacuum in a roll-to-roll deposition system, for example... Figure 7 The flexible substrate coating apparatus 700 shown. The alkali metal or alloy layer 230 can be deposited via a physical vapor deposition process, such as evaporation or sputtering. The evaporation process can be electron beam evaporation or thermal evaporation.

[0049] In one or more implementations that can be combined with other implementations, the thickness of the alkali metal or alloy layer 230 is in the range of about 1 micrometer to about 100 micrometers, or in the range of about 1 micrometer to about 100 micrometers, or in the range of about 1 micrometer to about 20 micrometers, or in the range of about 25 micrometers to about 50 micrometers.

[0050] In one or more implementations, the alkali metal or alloy layer 230 may be part of the SIDT film stack 235. (See reference) Figure 2A Although the SIDT film stack 235 is shown as comprising only an alkali metal or alloy layer 230, it typically includes additional layers such as a protective layer, an interface layer, and a solid electrolyte interphase (SEI) layer. If the SIDT film stack 235 is present, the alkali metal or alloy layer 230 is typically deposited last during its formation. This last deposition of the alkali metal or alloy layer 230 allows the SIDT film stack 235 to be formed without damaging the alkali metal or alloy layer 230, which typically has a lower melting point than other materials formed in the energy storage device. Conventional methods for forming energy storage devices typically involve depositing molten lithium directly onto the current collector during alkali metal or alloy anode formation, or depositing molten lithium directly onto the anode material in a pre-lithiation implementation. These methods also include maintaining the underlying substrate during the formation of the alkali metal or alloy layer 230 to prevent damage to the lithium. In contrast, the SIDT film stack 235 and method described herein are capable of forming an alkali metal or alloy layer 230 before transferring the SIDT film stack 235 from the flexible support layer stack 202 to the flexible substrate stack 240.

[0051] In one or more implementations that can be combined with other implementations, a solid electrolyte interface (SEI) layer may optionally be included in the SIDT film stack 235. In some implementations, the solid electrolyte interface layer may include or be a metal salt, such as a lithium salt. The lithium salt may be one or more of LiPF6, LiAsF6, LiCF3SO3, LiN(CF3SO3)3, LiBF6, LiClO4, BETTE electrolyte, or combinations thereof. The electrolyte may be in a gel or polymer matrix medium. In one or more implementations, the solid electrolyte interface layer may be or include a material selected from fluorocarbon (PTFE, PVDF), LiF, Li2CO3, MgO, AlO x AlHO2, RENiO3 (RE = rare earth), BN, BaTiO3, Li4Ti5O 12 ZrO2, TiO2, and silicon-doped lithium tantalum phosphates (e.g., Li(1+x)Ta2P(1-x)Si) x O8, Li 1.5 Ta2P0.5 Si 0.5 Lithium tantalum phosphate (e.g., LiTa2PO8(LTPO), Li2Ta2SiO8(LTSO), Li 0.34 La 0.56 TiO3), lithium aluminum titanium phosphate (e.g., Li) 1.3 Al 0.3 Ti 1.7 (PO4)3(LATP)), lithium aluminum germanium phosphate (e.g., Li) 1.3 Al 0.3 Ge 1.7 (PO4)3(LAGP)), Garnet-type Li7La3Zr2O 12 Materials containing (LLZO) or combinations thereof.

[0052] In one or more implementations that can be combined with other implementations, the interface layer may optionally be included in the SIDT film stack 235. The interface layer includes at least one of an interface dielectric material, an electroplating and release reinforcement layer, and a lithiophilic layer. The interface layer is deposited under vacuum. The interface layer may be deposited under vacuum in a roll-to-roll deposition system. The interface dielectric layer may be selected from AlO₂. x , AlOOH, LiF, BaTiO3, ZrO2, TiO2, Li4Ti5O 12 LiAlO2, AlF3, BiF3, AgF x Rare earth (RE) nickelates RENiO3 or combinations thereof. RE can be trivalent rare earth elements. RE can be lanthanides. RE can be selected from La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Y, Lu or combinations thereof. Electroplating and stripping reinforcement layers can be selected from metals, metal alloys, or metal chalcogenides. Electroplating and stripping reinforcement layers can be selected from Ag, Bi, Sn, Si, Ga, In, metal alloys, or chalcogenides of Ag, Bi, Sn, Si, Ga, In or combinations thereof. Deposition of alkali metals or their alloys, such as alkali metals or their alloys. The interface layer and the alkali metal layer or their alloy can be deposited without breaking the vacuum.

[0053] In one or more implementations that can be combined with other implementations, a passivation layer may optionally be included in the SIDT film stack 235. In some implementations, the passivation layer comprises a carbonate of an alkali metal in an alkali metal layer. In other implementations, the passivation layer is a fluoride of an alkali metal in an alkali metal layer. The passivation layer may be formed on the flexible support layer stack 202 prior to the formation of the alkali metal or alloy layer 230. In one implementation that can be combined with other implementations, the passivation layer comprises a lithium fluoride (LiF) layer, which may be formed on the flexible support layer stack 202 prior to the deposition of the alkali metal or alloy layer 230. In some implementations that can be combined with other implementations, the passivation layer comprises a lithium carbonate layer, which may be formed on the flexible support layer stack 202 prior to the deposition of the alkali metal or alloy layer 230. The lithium carbonate layer may be formed by exposing the alkali metal or alloy layer to carbon dioxide. In some implementations, the alkali metal or alloy layer is exposed to carbon dioxide in the presence of heat. The thickness of the passivation layer may be in the range of about 50 nm to about 100 nm. The passivation layer can serve as a protective layer for the alkali metal or alloy layer 230. For example, the passivation layer can protect the alkali metal or alloy layer 230 from oxidation and damage during storage and transportation.

[0054] In one or more implementations that can be combined with other implementations, the flexible support layer stack 202 and the alkali metal or alloy layer 230 are prefabricated. In other implementations, the flexible support layer stack 202 is prefabricated, and the alkali metal or alloy layer 230 is formed on the flexible support layer stack 202 via a deposition process (e.g., physical vapor deposition (PVD) process).

[0055] After operation 110 and before operation 120, a flexible support layer stack 202 on which an alkali metal or alloy layer 230 or a SIDT film stack 235 is formed can be obtained from a vacuum coating system (e.g., Figure 7 The flexible substrate coating apparatus 700 shown is transferred to a lamination transfer apparatus (e.g., a lamination transfer apparatus). Figure 8 The lamination transfer system 800 shown. The lamination transfer process may include applying a flexible substrate stack 240 to the front side 230f of an alkali metal or alloy layer 230, removing a flexible support layer 210 from the alkali metal or alloy layer 230, and optionally removing a release layer 220 to form an anode film stack 260.

[0056] refer to Figure 2BIn operation 120, an alkali metal or alloy layer 230 is laminated onto a flexible substrate stack 240. The flexible substrate stack 240 may include one or more layers. In some implementations, such as for an alkali metal or alloy anode device, the flexible substrate stack 240 may include a current collector. In some implementations, such as for a pre-lithiation process, the flexible substrate stack 240 may include an anode material. In other implementations, for a pre-lithiation process, the flexible substrate stack 240 may include both a current collector and an anode material. In yet another implementation, the flexible substrate stack 240 may be or include a separator layer, for example… Figure 2G The separator layer 280 is shown. The flexible substrate stack 240 may be or include a current collector or a current collector on which an anode material is formed. In one or more implementations that can be combined with other implementations, the flexible substrate stack 240 includes a roll-to-roll substrate, for example, the current collector may be a roll-to-roll substrate. Any suitable current collector can be used. The current collector may include or be, but is not limited to, aluminum (Al), copper (Cu), zinc (Zn), nickel (Ni), cobalt (Co), manganese (Mn), chromium (Cr), stainless steel, cladding material, metallized plastic, paper, stainless steel, metal mesh, or combinations thereof. Any suitable anode material can be used. The anode material may include or be, but is not limited to, graphite, silicon, silicon graphite, silicon oxide graphite, silicon, or combinations thereof. During the lamination process of operation 120, the alkali metal or alloy layer 230 contacts the flexible substrate stack 240. For example, the front side 230f of the alkali metal or alloy layer 230 contacts the surface of the flexible substrate stack 240, such as Figure 2B As shown. In some implementations, where the flexible substrate stack 240 only includes a current collector, the front side 230f of the alkali metal or alloy layer 230 contacts the surface of the current collector. In some implementations, where the flexible substrate stack 240 includes an anode material, the front side 230f of the alkali metal or alloy layer 230 contacts the surface of the anode material to pre-lithiate the anode material.

[0057] In one or more implementations, the flexible substrate stack 240 includes a non-adhesive coating 248. The non-adhesive coating 248 is formed on a portion of the front side 240f of the flexible substrate stack 240. The non-adhesive coating 248 may be patterned. When the patterned alkali metal or alloy layer 262 separates from the flexible support layer stack 202, the non-adhesive coating 248 protects a portion of the front side 240f of the flexible substrate stack 240 from lithium contamination. For example, see reference... Figure 2D and Figure 2EThe non-stick coating 248 prevents the coated portions of the flexible substrate stack 240 from being coated with lithium. The uncoated portions of the flexible substrate stack 240 can be used to form tabs. The non-stick coating 248 can be any suitable polymer coating. In one or more implementations that can be combined with other implementations, the non-stick coating 248 is selected from polyvinyl alcohol (PVA), polyvinylidene fluoride (PVDF), polytetrafluoroethylene (PTFE), and other polymers such as C. x F y Fluorocarbons such as C3F6 and C5F8; salts such as LiFSI and LiFSI.

[0058] refer to Figure 2C Optionally, in operation 130, pressure is applied to one or more of the flexible substrate stack 240 and the flexible support layer stack 202 on which the alkali metal or alloy layer 230 is formed, to laminate the flexible substrate stack 240 to the alkali metal or alloy layer 230. In some implementations, where method 100 is performed in a roll-to-roll tool, the roll tension is sufficient to laminate the alkali metal or alloy layer 230 to the flexible substrate stack 240, and no additional pressure is required. In some implementations, where additional pressure is used to laminate the alkali metal or alloy layer 230 to the flexible substrate stack 240, the lamination process includes pressing the alkali metal or alloy layer 230 to the flexible substrate stack 240 with a pressure sufficient to attach the alkali metal or alloy layer 230 to the flexible substrate stack 240 without damaging the alkali metal or alloy layer 230. In other words, the pressure prevents the alkali metal or alloy layer 230 from being mechanically damaged or degraded, such as by cracking or crushing. Any suitable technique can be used to apply the pressure. In one or more implementations, the pressure is applied via a rolling process. The calendering process may include the use of Figure 2C A pair of calendering rolls 242a-b are shown. For example, pressure can be applied to the back side 210b of the flexible support layer 210 and the back side 240b of the flexible substrate stack 240. In one or more other implementations, pressure is applied by a vacuum source. In one or more other implementations, pressure is external pressure.

[0059] Operations 120 and 130 may occur simultaneously, sequentially, or partially overlap.

[0060] refer to Figure 2DIn operation 140, the material is exposed to a laser activation process. The laser activation process of operation 140 involves exposing a flexible support layer stack 202 on which an alkali metal or alloy layer 230 is formed to a laser. In one or more implementations, the laser activation process of operation 140 is a laser ablation process as described below. In one or more implementations, during the laser activation process of operation 140, lasers 246a-b provided by one or more laser sources 244a-b are guided through the back side 210b of the flexible support layer 210 to activate the interface between the alkali metal or alloy layer 230 and the flexible support layer stack 202, such as a lithium-polyethylene terephthalate (PET) interface. Figure 2D As shown, lasers 246a-b can be guided through the back side of the flexible support layer stack 202, for example, from the plastic substrate or PET side of the flexible support layer stack 202. Exposure to the laser can activate not only the surface of the alkali metal or alloy layer 230, but also a portion of the flexible support layer stack 202. For example, exposure to the laser can activate a portion of the flexible support layer stack 202, such as the activated portion 222 of the release layer 220, a portion of the flexible support layer 210 in the absence of the release layer 220, or a portion of both the flexible support layer 210 and the release layer 220. In one or more implementations, the activated portion 222 may correspond to a void volume. Exposure to the laser can trigger a lithium transfer process, thereby creating a void volume between the alkali metal or alloy layer 230 and the flexible support layer stack 202. This void volume makes it easier to separate the alkali metal or alloy layer 230 during transfer from the flexible support layer stack 202 to the flexible substrate stack 240. The void volume can be patterned, making it easier to remove portions of the alkali metal or alloy layer 230 located above the patterned void volume, thereby forming a pattern during transfer to the flexible substrate stack 240. Additionally, exposure to lasers 246a-b can be used to pattern the alkali metal or alloy layer 230, allowing for the transfer of a precise pattern of the patterned alkali metal or alloy layer 262 from the flexible support layer stack 202 to the flexible substrate stack 240.

[0061] In some implementations that can be combined with other implementations, the release layer 220 may be or include a polymeric material capable of photoinduced depolymerization. Selective exposure of the release layer (e.g., the activated portion 222 of the release layer 220) and / or the flexible support layer 210 during the laser activation process can also be used for localized interfacial debonding by selective heating of portions of the release layer 220, which can also be used for pattern transfer.

[0062] In some implementations that can be combined with other implementations, the void formation mechanism is believed to be a combination of plasma generated by photoionization and sublimation with lithium.

[0063] Laser sources 244a-b can be infrared (IR) laser sources. Laser sources 244a-b can provide pulsed laser light. In one implementation that can be combined with other embodiments described herein, laser 246a-b includes a Gaussian beam profile with a beam quality “M² factor” less than about 1. . 3. In another implementation that can be combined with the other implementations described above, laser 246a-b has a Bezier beam profile. In yet another embodiment, laser 246a-b is a multifocal laser and uses a bifocal lens as part of an optical array. Multiple lenses may also be used within the optical array to diffract laser 246a-b and form multiple focal points within the flexible support layer stack 202 and the alkali metal or alloy layer 230. Laser source 244a-b can communicate with a controller (e.g., controller 805). Controller 805 can control other input or output parameters of laser source 244a-b.

[0064] In one or more implementations that can be combined with other implementations, the laser source 244a-b is an IR fiber laser. This IR fiber laser is a 1060 nm laser with a pulse width of 5 to 500 nanoseconds, such as a 30 nanosecond pulse width, a Gaussian profile, a spot size of approximately 150 μm, a grating velocity of 2 m / sec, and a line spacing of 70 μm.

[0065] The laser activation process can be performed in a single pass or in multiple passes. However, due to the moving speed of the flexible substrate, a single pass may be preferred for the laser activation process.

[0066] In one or more implementations that can be combined with other implementations, the flexible support layer stack 202 on which the alkali metal or alloy layer 230 is formed is exposed to a preheating process prior to operation 140. The preheating process may include exposing the alkali metal or alloy layer 230 to thermal energy, such as thermal energy provided by an IR lamp source. In some implementations, where the alkali metal or alloy layer 230 is a thicker layer, preheating the alkali metal or alloy layer 230 may reduce the amount of energy required during the laser activation process.

[0067] refer to Figure 2E In operation 150, the patterned portion of the alkali metal or alloy layer 230 is separated from the flexible support layer stack 202 to form an anode film stack 260 including a patterned alkali metal or alloy layer 262 formed on the flexible substrate stack 240. In one or more implementations that can be combined with other implementations, a portion of the release layer 220 may be transferred or partially transferred along with the patterned alkali metal or alloy layer 262. Alternatively, in other implementations, the release layer 220 is retained or partially retained on the flexible support layer 210 after operation 150.

[0068] refer to Figure 2FIn operation 160, the anolyte stack 260 may be exposed to a laser ablation process to remove any residue remaining on the flexible substrate stack 240, the patterned alkali metal or alloy layer 262, or both the flexible substrate stack 240 and the patterned alkali metal or alloy layer 262. For example, the laser ablation process can remove... Figure 2F The non-stick coating 248 shown.

[0069] refer to Figure 2G In operation 170, the anode membrane stack 260 may be integrated with the cathode structure 270, the separator layer 280, or both the cathode structure 270 and the separator layer 280 to form an energy storage device 290. The separator layer 280 may include, for example, a microporous polymer separator layer comprising a polyolefin, as a non-limiting example. The polyolefin may be a homopolymer (derived from a single monomer component) or a hybrid (derived from more than one monomer component), and may be linear or branched. If the hybrid is derived from two monomer components, the polyolefin may exhibit any copolymer chain arrangement, including those of block copolymers or random copolymers. Similarly, if the polyolefin is a hybrid derived from more than two monomer components, it may also be a block copolymer or a random copolymer. In some implementations, the polyolefin may be polyethylene (PE), polypropylene (PP), or a mixture of PE and PP, or a multilayer porous membrane of PE and / or PP. Commercially available polyolefin porous membranes include CELGARD® 2500 (single-layer polypropylene separator) and CELGARD® 2320 (triple-layer polypropylene / polyethylene / polypropylene separator), both available from Celgard LLC.

[0070] In one or more implementations that can be combined with other implementations, the cathode structure 270 includes a cathode material 272 and a cathode current collector 274. The cathode current collector 274 may be or include any of the aforementioned flexible films and aluminum (Al), copper (Cu), zinc (Zn), nickel (Ni), cobalt (Co), tin (Sn), silicon (Si), manganese (Mn), magnesium (Mg), their alloys, or combinations thereof. The cathode current collector 274 may be or include any one of aluminum (Al), copper (Cu), zinc (Zn), nickel (Ni), cobalt (Co), tin (Sn), silicon (Si), manganese (Mn), magnesium (Mg), their alloys, or combinations thereof. In a particular implementation, the cathode current collector 274 may be or include aluminum.

[0071] Cathode material 272 may be or include any suitable cathode material. Cathode material 272 or the cathode may be or include any material compatible with the anode, and may include intercalating compounds, insertion compounds, or electrochemically active polymers. Suitable intercalating materials include, for example, sulfur, lithium-containing metal oxides, MoS2, FeS2, MnO2, TiS2, NbSe3, LiCoO2, LiNiO2, LiMnO2, LiMn2O4, and V6O. 13 And V2O5. Suitable polymers include, for example, polyacetylene, polypyrrole, polyaniline, and polythiophene. In some implementations, the cathode material 272 includes the polymer binder material described herein. The cathode material 272 or the cathode may be or include layered oxides (such as lithium cobalt oxide), olivine (such as lithium iron phosphate), or spinel (such as lithium manganese oxide). Examples of lithium oxides may be layered, such as lithium cobalt oxide (LiCoO2), or mixed metal oxides, such as LiNi. x Co1₋ 2x MnO2, LiNiMnCoO2 (“NMC”), LiNi 0.5 Mn 1.5 O4, Li(Ni) 0.8 Co 0.15 Al 0.05 O2, LiMn2O4, and doped lithium-rich layered-layered materials, where x is a zero or non-zero number. Examples of phosphates can be or include olivine iron (LiFePO4) and its variants (such as LiFe(1-x)Mg). x PO4), LiMoPO4, LiCoPO4, LiNiPO4, Li3V2(PO4)3, LiVOPO4, LiMP2O7 or LiFe 1.5 P2O7, where x is a zero or non-zero number. Examples of fluorophosphates may include or include LiVPO4F, LiAlPO4F, Li5V(PO4)2F2, Li5Cr(PO4)2F2, Li2CoPO4F, or Li2NiPO4F. Examples of silicates may include or include Li2FeSiO4, Li2MnSiO4, or Li2VOSiO4. Examples of non-lithium compounds may include or include Na5V2(PO4)2F3. The energy storage device 290 may include additional layers and / or materials, which are omitted for brevity.

[0072] Figure 3 A flowchart illustrating a method 300 for manufacturing an energy storage device according to one or more implementations of this disclosure is provided. Figure 4A-4G Views illustrating various stages of manufacturing an energy storage device according to one or more implementations of this disclosure. Although Figure 4A-4G This is about the description of method 300, but it should be understood that... Figure 4A-4GThe structure disclosed herein is not limited to method 300, but can exist independently of method 300. Similarly, although method 300 is about... Figure 4A-4G The method described is, but it should be understood, that method 300 is not limited to. Figure 4A-4G The structure is not publicly available, but can be independent of... Figure 4A-4G The publicly disclosed structure exists independently. It should be understood that... Figure 4A-4G Only a partial schematic diagram of the energy storage device structure is shown, and the energy storage device structure may include any number of additional layers and / or additional materials common to energy storage devices, which are not shown for simplicity. It should also be noted that, although... Figure 3 The method 300 illustrated herein is described sequentially, but one or more operations that have been omitted and / or added and / or other process sequences rearranged in a different desired order fall within the scope of the implementation of this disclosure provided herein.

[0073] refer to Figure 4A In operation 310, a flexible support layer stack 202 is provided. The flexible support layer stack 202 includes a flexible support layer 210. The flexible support layer stack 202 may further include a release layer 220. An alkali metal or alloy layer 230 is formed on the front side 220f of the release layer 220 (if present), or on the front side 210f of the flexible support layer 210 if the release layer 220 is not present.

[0074] After operation 310 and before operation 320, a flexible support layer stack 202 on which an alkali metal or alloy layer 230 is formed can be obtained from a vacuum coating system (e.g., Figure 7 The flexible substrate coating apparatus 700 shown is transferred to a lamination transfer apparatus (e.g., a lamination transfer apparatus). Figure 8 The lamination transfer system 800 shown is illustrated.

[0075] refer to Figure 4B In operation 320, a flexible support layer stack 202 on which an alkali metal or alloy layer 230 is formed is exposed to a laser activation process. The laser activation process can be performed similarly to the laser activation process of operation 140. In one or more implementations, the laser activation process of operation 320 is a laser stripping process as described below. A portion of the laser-activated flexible support layer stack 202 is exposed to laser activation, such as a first activation portion 222a and a second activation portion 222b of the stripping layer 220, the flexible support layer 210 in the absence of the stripping layer 220, or both the flexible support layer 210 and the stripping layer 220.

[0076] In one or more implementations that can be combined with other implementations, a flexible support layer stack 202 on which an alkali metal or alloy layer 230 is formed is exposed to a preheating process prior to operation 320.

[0077] refer to Figure 4CIn operation 330, unwanted portions 410a-b of the alkali metal or alloy are removed from the alkali metal or alloy layer 230 to form a patterned alkali metal or alloy layer 430. The unwanted portions 410a-b of the alkali metal or alloy correspond to the first activated portion 222a and the second activated portion 222b of the release layer 220 and / or the flexible support layer 210, respectively. Figure 4C The dummy substrate 420 shown removes unwanted portions 410a-b of alkali metals or alloys. The dummy substrate 420 may comprise any suitable material. In one or more implementations that can be combined with other implementations, the dummy substrate 420 may be or comprise any polymeric material that can be used to form the flexible support layer 210. In one example, the dummy substrate 420 is or comprises PET. The dummy substrate 420 may be coated with an adhesive material layer 412. The adhesive material layer 412 adheres to the unwanted lithium portions and improves the removal of the unwanted lithium portions. The adhesive material layer 412 may be a continuous adhesive material layer. The adhesive material layer 412 may be patterned to form patterned adhesive material layers 412a-b. Figure 4C As shown, patterned adhesive material layers 412a-b correspond to unwanted portions 410a-b of the alkali metal or alloy. Adhesive material layer 412 can be or includes any suitable material for adhesion to lithium. The dummy substrate 420 and patterned adhesive material layers 412a-b (if present) contact the front side 230f of the alkali metal or alloy layer 230. For example, patterned material layer 412a contacts the alkali metal or alloy layer 230 over the first activated portion 222a of the release layer 220 and / or the flexible support layer 210, and patterned material layer 412b contacts the alkali metal or alloy layer 230 over the second activated portion 222b of the release layer 220 and / or the flexible support layer 210. The dummy substrate 420 separates from the alkali metal or alloy layer 230, removing the unwanted portions 410a-b of the alkali metal or alloy, thereby forming the patterned alkali metal or alloy layer 430.

[0078] refer to Figure 4D In operation 340, a patterned alkali metal or alloy layer 430 is laminated onto a flexible substrate stack 240. The flexible substrate stack 240 may include one or more layers. The lamination process of operation 340 may be performed similarly to operation 120 of method 100. During the lamination process of operation 340, the patterned alkali metal or alloy layer 430 contacts the flexible substrate stack 240. For example, the front side 430f of the patterned alkali metal or alloy layer 430 contacts the surface of the flexible substrate stack 240, such as... Figure 4DAs shown. In some implementations, where the flexible substrate stack 240 only includes a current collector, the front side 430f of the patterned alkali metal or alloy layer 430 contacts the surface of the current collector. In some implementations, where the flexible substrate stack 240 includes an anode material, the front side 430f of the patterned alkali metal or alloy layer 430 contacts the surface of the anode material to pre-lithiate the anode material.

[0079] refer to Figure 4E Optionally, in operation 350, pressure is applied to one or more of the flexible substrate stack 240 and the flexible support layer stack 202. Operation 350 may be performed similarly to operation 130 of method 100. Operations 340 and 350 may occur simultaneously, sequentially, or partially overlap.

[0080] refer to Figure 4F In operation 360, the patterned alkali metal or alloy layer 430 is separated from the flexible support layer stack 202 to form an anode film stack 260 including the patterned alkali metal or alloy layer 430 formed on the flexible substrate stack 240. In one or more implementations that can be combined with other implementations, a portion of the release layer 220 may be transferred or partially transferred along with the patterned alkali metal or alloy layer 430. Alternatively, in other implementations, the release layer 220 is retained or partially retained on the flexible support layer 210 after operation 360.

[0081] refer to Figure 4G In operation 370, the anode film stack 260 may be integrated with the cathode structure 270, the separator layer 280, or both the cathode structure 270 and the separator layer 280 to form the energy storage device 290 as described in operation 170.

[0082] Figure 5 A flowchart illustrating a method 500 for manufacturing an energy storage device according to one or more implementations of this disclosure is provided. Figures 6A-6E Views illustrating various stages of manufacturing an energy storage device according to one or more implementations of this disclosure. Although Figures 6A-6E This is about the description of method 500, but it should be understood that... Figures 6A-6E The structure disclosed herein is not limited to method 500, but can exist independently of method 500. Similarly, although method 500 is about... Figures 6A-6E The methods described are, but it should be understood, not limited to, Method 500. Figures 6A-6E The structure is not publicly available, but can be independent of... Figures 6A-6E The publicly disclosed structure exists independently. It should be understood that... Figures 6A-6E Only a partial schematic diagram of the energy storage device structure is shown, and the energy storage device structure may include any number of additional layers and / or additional materials common to energy storage devices, which are not shown for simplicity. It should also be noted that, although... Figure 5The methods 500 illustrated herein are described sequentially, but one or more operations that have been omitted and / or added and / or other process sequences rearranged in a different desired order fall within the scope of the implementation of this disclosure provided herein.

[0083] refer to Figure 6A In operation 510, a flexible support layer stack 202 on which an alkali metal or alloy layer 230 is formed is provided, as described in operation 110.

[0084] refer to Figure 6B In operation 520, an alkali metal or alloy layer 230 is laminated onto a flexible substrate stack 240, as described in operation 120.

[0085] refer to Figure 6C In operation 530, pressure is applied to one or more of the flexible substrate stack 240 and flexible support layer stack 202 while performing the laser activation process. The pressure may be applied as described in operation 130, and the laser activation process may be performed as described in operation 140. In one or more implementations, the laser activation process of operation 530 is a laser lift-off process as described below. The pressure and laser activation occur simultaneously, such that the processes at least partially overlap. Any suitable pressure application technique may be used during operation 530. The pressure application process of operation 530 may include a calendering process as described in operation 130. Figure 2C The calendering rolls 242a-b depicted in the text can be replaced with Figure 6C The pressure application plates 642a-b are shown. In one or more implementations that can be combined with other applications, the pressure application plates 642a-b are transparent to the laser, such that the laser activation process and the pressure application process can be performed simultaneously or at least partially overlapped.

[0086] refer to Figure 6D In operation 540, the patterned portion of the alkali metal or alloy layer 230 is separated from the flexible support layer stack 202 to form an anode film stack 260 including a patterned alkali metal or alloy layer 262 formed on the flexible substrate stack 240, as described in operation 540.

[0087] In operation 550, the anodic film stack 260 may be exposed to a laser ablation process to remove any residue remaining on the flexible substrate stack 240, the patterned alkali metal or alloy layer 262, or both the flexible substrate stack 240 and the patterned alkali metal or alloy layer 262.

[0088] refer to Figure 6E In operation 560, the anode membrane stack 260 may be integrated with the cathode structure 270, the separator layer 280, or both the cathode structure 270 and the separator layer 280 to form the energy storage device 290 as described in operation 170.

[0089] Figure 7 A schematic diagram illustrates a flexible substrate coating apparatus 700 for forming at least a portion of the SIDT film stack according to one or more implementations of this disclosure. The flexible substrate coating apparatus 700 may be a roll-to-roll coating system. The flexible substrate coating apparatus 700 may be used to perform portions of methods 100, 300, and 500, such as portions of methods 100, 300, and 500 performed using vacuum deposition.

[0090] The flexible substrate coating apparatus 700 can be a SMART roll® manufactured by Applied Materials, adapted for manufacturing lithium anode devices according to the implementations described herein. According to some implementations, the flexible substrate coating apparatus 700 can be used to manufacture lithium anodes or pre-lithiated anodes, and is particularly used to manufacture portions of SIDT film stacks containing lithium films. The flexible substrate coating apparatus 700 is configured as a roll-to-roll system, including an unwinding module 702, a processing module 704, and a winding module 706. In one or more implementations, the processing module 704 includes a plurality of processing modules or chambers 710, 720, 730, and 740 arranged in sequence, each chamber configured to perform a processing operation on a continuous material sheet 750 or a material roll, such as a flexible support layer 210 or a flexible support layer stack 202. In one or more implementations, such as Figure 7 As shown, the processing chambers 710-740 are arranged radially around the coating roller 755. Arrangements other than radial are also contemplated. For example, in another implementation, the processing chambers may be positioned in a linear configuration.

[0091] In one implementation, the processing chambers 710-740 are independent modular processing chambers, each of which is structurally separate from the other modular processing chambers. Therefore, each independent modular processing chamber can be independently arranged, rearranged, replaced, or maintained without affecting each other. Although four processing chambers 710-740 are shown, it should be understood that the flexible substrate coating apparatus 700 may include any number of processing chambers.

[0092] Processing chambers 710-740 may include any suitable structure, configuration, arrangement, and / or components that enable the flexible substrate coating apparatus 700 to deposit portions of the SIDT film stack according to the implementation of this disclosure. For example, but not limited to, the processing chambers may include suitable deposition systems, including a coating source, power supply, separate pressure control, deposition control system, and temperature control. According to a typical implementation, the chambers are equipped with separate gas supplies. The chambers are typically separated from each other to provide good gas separation. The flexible substrate coating apparatus 700 according to the implementation described herein is not limited in the number of deposition chambers. For example, but not limited to, the flexible substrate coating apparatus 700 may include 3, 6, or 12 processing chambers.

[0093] Processing chambers 710-740 typically include one or more deposition units 712, 722, 732, and 742. Generally, the one or more deposition units described herein can be selected from chemical vapor deposition (CVD) sources, atomic layer deposition (ALD) sources, plasma-enhanced chemical vapor deposition (PECVD) sources, and physical vapor deposition (PVD) sources. One or more deposition units may include evaporation sources, sputtering sources (such as magnetron sputtering sources, direct current (DC) sputtering sources, alternating current (AC) sputtering sources, pulsed sputtering sources, radio frequency (RF) sputtering sources, or intermediate frequency (MF) sputtering sources). One or more deposition units may include evaporation sources. In one implementation, the evaporation source is a thermal evaporation source or an electron beam evaporation source. In one implementation, the evaporation source is a lithium (Li) source. Alternatively, the evaporation source may also be an alloy of two or more metals. The material to be deposited (e.g., lithium) can be provided in a crucible. Lithium can be deposited, for example, by thermal evaporation or electron beam evaporation.

[0094] In some implementations, one or more chambers may be configured to perform deposition by other methods, such as, but not limited to, chemical vapor deposition, atomic laser deposition, or pulsed laser deposition. In some implementations, one or more chambers may be configured to perform plasma processing techniques, such as plasma oxidation or plasma nitriding processes.

[0095] In one or more implementations, processing chambers 710-740 are configured to process both sides of the continuous material sheet 750. Although the flexible substrate coating apparatus 700 is configured to process horizontally oriented continuous material sheet 750, the flexible substrate coating apparatus 700 may be configured to process substrates positioned with different orientations; for example, the continuous material sheet 750 may be vertically oriented. In one or more implementations, the continuous material sheet 750 is a flexible support layer, such as the aforementioned flexible support layer stack 202. In one or more implementations, the continuous material sheet 750 includes a PET substrate and an optional release layer.

[0096] In one or more implementations, the flexible substrate coating apparatus 700 includes a transfer mechanism 752. The transfer mechanism 752 may include any transfer mechanism capable of moving a continuous material sheet 750 through the processing areas of processing chambers 710-740. The transfer mechanism 752 may include a common transport architecture. The common transport architecture may include a reel-to-reel system having a common take-up reel 754 positioned in a winding module 706, a coating roller 755 positioned in the processing module 704, and an unwinding reel 756 positioned in the unwinding module 702. The take-up reel 754, coating roller 755, and unwinding reel 756 can be individually heated. The take-up reel 754, coating roller 755, and unwinding reel 756 can be individually heated using an internal heating source or an external heating source positioned within each reel. The common transport architecture may further include one or more auxiliary transfer reels 753a, 753b positioned between the take-up reel 754, coating roller 755, and unwinding reel 756. Although the flexible substrate coating apparatus 700 is depicted as having a single processing area, in one or more implementations, it may be advantageous to provide separate or discrete processing areas for each individual processing chamber 710-740. For implementations with discrete processing areas, modules, or chambers, the common transport architecture may be a roll-to-roll system, wherein each chamber or processing area has a separate take-up roll and an unwind roll, as well as one or more optional intermediate transfer rolls positioned between the take-up roll and the unwind roll.

[0097] The flexible substrate coating apparatus 700 may include an unwinding reel 756 and a rewinding reel 754 for moving a continuous material sheet 750 through different processing chambers 710-740. In one or more implementations that can be combined with other implementations, each processing chamber may be configured to deposit a portion of an SIDT film stack 235. In one implementation, the first processing chamber 710 and the second processing chamber 720 are each configured to deposit one or more protective layers and / or SEI layers. The third processing chamber 730 and the fourth processing chamber 740 are configured to deposit a portion of an alkali metal-containing film, such as an alkali metal or alloy layer 230.

[0098] In one implementation, processing chambers 730 and 740 are configured to deposit a thin film of an alkali metal or alloy on a continuous material sheet 750. Any suitable lithium deposition process for depositing alkali metal or alloy thin films can be used to deposit the alkali metal or alloy thin film. The deposition of the alkali metal or alloy thin film can be performed via a PVD process, such as vapor deposition. The chamber for depositing the alkali metal or alloy thin film may include a PVD system, such as an electron beam evaporator, a thermal evaporator, or a lamination system.

[0099] During operation, the continuous material sheet 750 is unwound from the unwinding reel 756 as indicated by arrow 708 in the substrate movement direction. The continuous material sheet 750 may be guided via one or more auxiliary transfer reels 753a, 753b. Alternatively, the continuous material sheet 750 may be guided by one or more substrate guiding control units (not shown), which control the proper operation of the flexible substrate by, for example, finely adjusting the orientation of the flexible substrate.

[0100] After being unwound from the unwinding reel 756 and passing through the auxiliary transfer reel 753a, the continuous material sheet 750 then moves through the deposition areas located at the coating roller 755 and corresponding to the positions of deposition units 712, 722, 732, and 742. During operation, the coating roller 755 rotates about axis 751, causing the flexible substrate to move in the direction of arrow 708.

[0101] Figure 8 A schematic side view illustrating a lamination transfer system 800 according to one or more implementations of this disclosure is shown. The lamination transfer system 800 includes means for transferring a SIDT film stack (e.g., SIDT film stack 235) to both sides of a flexible substrate 830 (e.g., flexible substrate stack 240), the SIDT film stack including a lithium film on a first flexible carrier 810 (e.g., flexible support layer stack 202) and a second flexible carrier 820 (e.g., flexible support layer stack 202), such that the flexible substrate stack 240 having an alkali metal or alloy film can be used as an electrode (e.g., an anode) or a pre-lithiated electrode in a lithium-ion battery. The lamination transfer system 800 includes a laser activation unit 837 for activating and / or patterning the alkali metal or alloy film prior to transferring the SIDT film stack on the flexible carriers 810, 820 to the flexible substrate 830. The lamination transfer system 800 may further include a lamination or calendering unit 840 to transfer the SIDT film stack on the flexible carriers 810, 820 to the flexible substrate 830.

[0102] The lamination transfer system 800 includes a first flexible carrier supply hub 815. A supply roll 811 of the first flexible carrier 810 is positioned on the first flexible carrier supply hub 815. In some implementations, the first flexible carrier 810 may be formed of a polymeric material, such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI), metallized plastic, or combinations thereof. This includes lithium films (…). Figure 8A SIDT film (not shown) is stacked and positioned on the lower side 810L of the first flexible carrier 810 such that when the first flexible carrier 810 and the flexible substrate 830 are transported through the lamination or calendering unit 840, the lithium film faces the upper surface 830U of the flexible substrate 830. The upper surface 830U of the flexible substrate 830 is on the opposite side to the lower surface 830L of the flexible substrate 830. The upper surface 830U is also referred to as the first surface or first side of the flexible substrate 830, and the lower surface is also referred to as the second surface or second side of the flexible substrate 830.

[0103] The lamination transfer system 800 includes a second flexible carrier supply hub 825. A supply roll 821 of the second flexible carrier 820 is positioned on the second flexible carrier supply hub 825. In some embodiments, the second flexible carrier 820 may be formed of the same material as the first flexible carrier 810 (e.g., PET). This includes lithium film (…). Figure 8 A SIDT film stack (e.g., any SIDT film stack 235, not shown) is positioned on the upper side 820U of the second flexible carrier 820 such that when the second flexible carrier 820 and the flexible substrate 830 are transported through the rolling unit 840, the lithium film faces the lower surface 830L of the flexible substrate 830.

[0104] The lamination transfer system 800 includes a flexible substrate supply hub 835. A supply roll 831 of the flexible substrate 830 is positioned on the flexible substrate supply hub 835. In some embodiments, the flexible substrate 830 may be formed of one or more of copper, graphite, silicon, graphite silicon, graphite silica, silicon, metallized plastic, or other materials.

[0105] The lamination transfer system 800 further includes a laser activation unit 837. The lamination transfer system 800 includes one or more laser sources 244a, 244b positioned to direct laser energy toward the back side of the first flexible carrier 810 and the back side of the second flexible carrier 820. The one or more laser sources 244a, 244b are adaptable for processing alkali metal or alloy films formed on the first flexible carrier 810 and the second flexible carrier 820, as described in methods 100, 300, and 500.

[0106] The lamination transfer system 800 may further include a calendering unit 840. The calendering unit 840 includes a first calendering roll 841 and a second calendering roll 842. A first flexible carrier 810, a second flexible carrier 820, and a flexible substrate 830 are arranged to be transported along a path extending between the first calendering roll 841 and the second calendering roll 842. As the first flexible carrier 810, the second flexible carrier 820, and the flexible substrate 830 are transported between the first calendering roll 841 and the second calendering roll 842, the flexible substrate 830 is positioned between the first flexible carrier 810 and the second flexible carrier 820. The calendering rolls 841 and 842 apply substantial pressure to the flexible carriers 810 and 820 and the flexible substrate 830, resulting in the transfer of a SIDT film stack, including a patterned alkali metal or alloy film formed on each flexible carrier 810 and 820, to the flexible substrate 830. In some embodiments, a release layer (e.g., release layer 220) is disposed on each flexible carrier 810, 820, located between the corresponding flexible carrier 810, 820 and the SIDT film stack on the flexible carrier.

[0107] The lamination transfer system 800 includes a first flexible carrier pick-up hub 816. A pick-up roll 812 of the first flexible carrier 810 is positioned on the first flexible carrier pick-up hub 816. When the first flexible carrier 810 is wound onto the first flexible carrier pick-up hub 816, the SIDT film stack is no longer located on the first flexible carrier 810 because the SIDT film stack previously on the first flexible carrier 810 has been transferred to the flexible substrate 830 via a calendering unit 840.

[0108] The lamination transfer system 800 includes a second flexible carrier pick-up hub 826. A pick-up roll 822 of the second flexible carrier 820 is positioned on the second flexible carrier pick-up hub 826. When the second flexible carrier 820 is wound onto the second flexible carrier pick-up hub 826, the SIDT film stack is no longer located on the second flexible carrier 820 because the SIDT film stack previously located on the second flexible carrier 820 has been transferred to the flexible substrate 830 via the calendering unit 840.

[0109] The lamination transfer system 800 includes a flexible substrate pick-up hub 836. A pick-up roll 832 of the flexible substrate 830 is positioned on the flexible substrate pick-up hub 836. The flexible substrate 830 includes a SIDT film stack on each of its upper surface 830U and lower surface 830L. The SIDT film stack is transferred from the respective flexible carriers 810, 820 to the flexible substrate 830 via a calendering unit 840.

[0110] The lamination transfer system 800 further includes a plurality of rollers 881-888. In some embodiments, each of the rollers 881-888 may be a passive roller. The rollers 881-888 may help apply appropriate tension to the flexible carriers 810, 820 and the flexible substrate 830, and help change their orientation as each of the flexible carriers 810, 820 and the flexible substrate 830 moves through different portions of the lamination transfer system 800. Some of the rollers 881-888 may also help bring the flexible carriers 810, 820 closer to or further away from the flexible substrate 830. For example, second and third rollers 882, 883 help bring the flexible carriers 810, 820 into contact with the flexible substrate 830 before the flexible carriers 810, 820 and the flexible substrate 830 are conveyed through the calendering unit 840. Furthermore, the fourth and fifth rollers 884, 885 provide a location where tension can be applied to the flexible carriers 810, 820 to peel them from the flexible substrate 830. In some embodiments, one or more of the rollers 881-888 may alternatively be rods, such as metal rods, which can apply tension to the carrier or flexible substrate during movement.

[0111] The lamination transfer system 800 may further include actuators (not shown) configured to rotate the respective hubs 815, 816, 825, 826, 835, 836, such that the flexible carriers 810, 820 and the flexible substrate 830 can be transported from the corresponding supply hubs 815, 825, 835 through the calendering unit 840 and to the corresponding pick-up hubs 816, 826, 836. The lamination transfer system 800 may further include one or more actuators (not shown) to rotate the calendering rolls 841, 842 of the calendering unit 840. The rotational speed of the actuators can be adjusted to control the transport speed of the flexible substrate 830 and the flexible carriers 810, 820 through the lamination transfer system 800.

[0112] In the lamination transfer system 800, a flexible substrate 830 is transported along a path from a supply roll 831 supported by a supply hub 835, passing through a first roller 881, between second and third rollers 882 and 883, between calendering rollers 841 and 842, between fourth and fifth rollers 884 and 885, through an eighth roller 888, and reaching a pick-up roll 832 surrounding a pick-up hub 836. The pick-up hub 836 is configured to rotate after the flexible substrate 830 has passed through the first calendering rollers 841 and the second calendering rollers 842 and to assist in transporting the flexible substrate along the path. Similarly, pick-up hubs 816 and 826 are configured to rotate and assist in transporting the flexible substrate along the path between the supply hubs 815 and 825 and the pick-up hubs 816 and 826.

[0113] The lamination transfer system 800 may also include a controller 805 for controlling the process performed by the lamination transfer system 800. The controller 805 may be any type of controller used in an industrial environment, such as a programmable logic controller (PLC). The controller 805 includes a processor 807, a memory 806, and input / output (I / O) circuitry 808. The controller 805 may further include one or more of the following components (not shown): one or more power supplies, a clock, communication components (e.g., a network interface card), and a user interface commonly found in controllers of semiconductor devices.

[0114] Memory 806 may include non-transitory memory. Non-transitory memory may be used to store programs and settings as described below. Memory 806 may include one or more readily available memory types, such as read-only memory (ROM) (e.g., electrically erasable programmable read-only memory (EEPROM), flash memory, floppy disk, hard disk), or random access memory (RAM) (e.g., non-volatile random access memory (NVRAM)).

[0115] Processor 807 is configured to execute various programs stored in memory 806, such as programs configured to execute methods 100, 300, and 500 described below. During the execution of these programs, controller 805 can communicate with I / O devices via I / O circuitry 808. For example, during the execution of these programs and communication via I / O circuitry 808, controller 805 can control outputs (e.g., actuators connected to the respective hubs and calendering units 840). Memory 806 may further include various operational settings for controlling the lamination transfer system 800. For example, these settings may include speed settings for actuators connected to the hubs.

[0116] Figure 9A A schematic side view of a laminating apparatus 900 according to one or more implementations of this disclosure is shown. The laminating apparatus 900 can be used to perform the laminating process described herein. The laminating apparatus 900 can be used to perform portions of methods 100, 300, and 500. For example, Figure 6CThe pressure application process of operation 530 shown is illustrated. The lamination apparatus includes a mandrel 902 having a surface 904. Surface 904 may include a lamination region 906 on which a film stack 908 is placed. The film stack 908 includes a flexible support layer stack 202 on which an alkali metal or alloy layer 230 is formed, which is in contact with a flexible substrate stack 240. The mandrel 902 has a plurality of vacuum holes (not shown) formed therethrough. The vacuum holes are fluidly coupled to a vacuum source 912. The lamination apparatus may further include a laser source, such as laser sources 244a-b for patterning the alkali metal or alloy layer. The flexible support layer stack 202 on which the alkali metal or alloy layer 230 is formed is in contact with the flexible substrate stack 240 and is covered by a transparent film 920. The transparent film may be formed of an encapsulation film that seals the mandrel 902 to surround the flexible support layer stack 202 on which the alkali metal or alloy layer 230 is formed and is in contact with the flexible substrate stack 240. The transparent membrane largely prevents the passage of air and / or gases. Typically, the transparent membrane 920 comprises any suitable impermeable membrane, layer, or barrier that does not significantly adhere to the membrane stack 908. Suitable materials for forming the transparent membrane 920 include plastics, rubber, resins, etc. In operation, a vacuum source 912 is controlled to apply pressure to the membrane stack, thereby laminating the alkali metal or alloy layer onto the flexible substrate stack 240.

[0117] Figure 9B Image 950 is an example of a laminating device according to one or more implementations of this disclosure.

[0118] Example:

[0119] The following non-limiting examples are provided to further illustrate the embodiments described herein. However, these examples are not intended to be all-encompassing and are not intended to limit the scope of the implementations described herein.

[0120] Figure 10 Image 1000 illustrates a lithium pattern 1010 transferred onto a graphite anode 1020 according to one or more implementations of this disclosure. The lithium pattern 1010 depicted in image 1000 is formed from a lithium layer coated on a PET substrate. As described herein, the lithium layer is patterned on the PET substrate using a laser to form the lithium pattern 1010, and the lithium pattern 1010 is selectively transferred from the PET substrate to the graphite anode 1020 to form the structure shown in image 1000.

[0121] The previously described implementations of this disclosure have numerous advantages. However, this disclosure does not require that all advantageous features and benefits be incorporated into every implementation of this disclosure. The transfer process and system described herein enable roll-to-roll laser lift-off processing and offer one or more of the following advantages: patterned lithium transfer, low-pressure calendered lithium transfer, room-temperature lithium transfer, lithium surface modification in a controlled environment, faster transfer rates, reuse of the flexible plastic support substrate, elimination of the need to cut rolls for patterned transfer, simplified transfer tool architecture, and small tool footprint. This transfer process is safe and industrially scalable for high-volume manufacturing. Furthermore, the ability to transfer lithium in a controlled environment and the potential for reusing plastic substrate rolls provide a low-risk commercialization path.

[0122] In the abstract, the following detailed description, the appended claims, and the accompanying drawings, specific features (including method steps) of this disclosure are referenced. It should be understood that this disclosure as described herein includes all possible combinations of these specific features. For example, where a specific feature is disclosed in the context of a particular aspect, implementation, or claim of this disclosure, that feature may also be used, where possible, in combination with other specific aspects and implementations of this disclosure and with the disclosure as a whole.

[0123] This document uses the terms “comprising,” “including,” and “having,” and their grammatical equivalents, to indicate that other parts, components, operations, etc., may optionally be present. For example, an article that includes (or “comprising”) parts A, B, and C may consist of (i.e., contain only) parts A, B, and C, or may contain not only parts A, B, and C, but also one or more other parts. Furthermore, whenever the transitional phrase “comprising” or its grammatical equivalent is used before a part, element, or group of elements, it should be understood that the transitional phrases “basically composed of,” “composed of,” “selected from,” or “is” may also be used before that part, element, or group of elements, and vice versa.

[0124] In this specification, when a method comprising two or more qualified operations is referenced, these qualified operations may be performed in any order or simultaneously (unless the context precludes such a possibility), and the method may include one or more other operations performed before any qualified operation, between two qualified operations, or after all qualified operations (unless the context precludes such a possibility).

[0125] In this specification, when a range is given as "(first number) to (second number)" or "(first number) - (second number)", it means a range with the lower limit of the first number and the upper limit of the second number. For example, 25 to 100 mm means a range with the lower limit of 25 mm and the upper limit of 100 mm.

[0126] The embodiments and all functional operations described herein can be implemented in digital electronic circuits, or in computer software, firmware, or hardware, including the structural devices and their equivalents disclosed herein, or in combinations thereof. The embodiments described herein can be implemented as one or more non-transitory computer program products, i.e., one or more computer programs tangibly embodied in a machine-readable storage device for performing or controlling the operation of a data processing device, such as a programmable processor, computer, or multiple processors or computers.

[0127] The process and logic flow described herein can be executed by one or more programmable processors executing one or more computer programs to perform functions by manipulating input data and generating outputs. The process and logic flow can also be executed by dedicated logic circuits, and the device can also be implemented as dedicated logic circuits, such as FPGAs (Field-Programmable Gate Arrays) or ASICs (Application-Specific Integrated Circuits).

[0128] The term "data processing device" encompasses all devices, apparatuses, and machines used for processing data, including, by way of example, programmable processors, computers, or multiple processors or computers. In addition to hardware, the device may include code that generates an execution environment for the computer program in question, such as code constituting processor firmware, a protocol stack, a database management system, an operating system, or a combination of one or more of these. Processors suitable for executing computer programs include, by way of example, general-purpose and special-purpose microprocessors, as well as any one or more processors of any type of digital computer.

[0129] Computer-readable media suitable for storing computer program instructions and data include all forms of non-volatile memory, media, and storage devices, including exemplary semiconductor storage devices such as EPROM, EEPROM, and flash memory devices; magnetic disks, such as internal hard disks or removable disks; magneto-optical disks; and CD-ROM and DVD-ROM disks. The processor and memory may be supplemented by or incorporated into dedicated logic circuitry.

[0130] When elements of this disclosure or exemplary aspects or embodiments thereof are introduced, the articles “a,” “an,” “the,” and “the” are intended to indicate the presence of one or more elements.

[0131] While the foregoing describes embodiments of this disclosure, other and further embodiments of this disclosure may be devised without departing from its essential scope, the scope of which is determined by the following claims.

Claims

1. A method for forming a membrane stack for an energy storage device, comprising: An alkali-containing metal layer is laminated onto a flexible substrate stack, the alkali-containing metal layer being formed on a flexible support layer stack, the flexible support layer stack including a polymer substrate, the alkali-containing metal layer being formed above the front side of the polymer substrate; The alkali-containing metal layer is patterned by exposing a portion of the alkali-containing metal layer to one or more lasers. as well as The exposed portion of the alkali-containing metal layer is transferred from the flexible support layer stack to the flexible substrate stack, the flexible substrate stack including a current collector or a separator layer.

2. The method of claim 1, wherein the one or more lasers are directed through the back side of the polymer substrate.

3. The method of claim 2, wherein a portion of the alkali-containing metal layer is exposed to the one or more lasers to generate a void volume between the alkali-containing metal layer and the flexible support layer stack.

4. The method of claim 1, further comprising heating the alkali-containing metal layer prior to patterning the alkali-containing metal layer.

5. The method of claim 1, wherein laminating the alkali-containing metal layer onto the flexible substrate stack comprises applying pressure to one or more of the flexible substrate stack and the flexible support layer stack.

6. The method of claim 1, wherein the flexible support layer stack further comprises a release layer formed between the flexible support layer and the alkali metal layer.

7. The method of claim 6, wherein the release layer comprises a polymer material capable of photoinduced depolymerization.

8. The method of claim 1, wherein the polymer substrate is a roll-to-roll polymer substrate, and the current collector or the separator is a roll-to-roll substrate.

9. A method for forming a membrane stack of an energy storage device, comprising: The alkali-containing metal layer is patterned by exposing a portion of the alkali-containing metal layer to one or more lasers. The alkali-containing metal layer is formed on a flexible support layer stack, the flexible support layer stack including a polymer substrate, and the alkali-containing metal layer is formed above the front side of the polymer substrate. The exposed portion of the alkali-containing metal layer is removed by transferring the exposed portion of the alkali-containing metal layer from the flexible support layer stack to a dummy substrate, wherein the unexposed portion of the alkali-containing metal layer forms a patterned alkali-containing metal layer. The patterned alkali-containing metal layer is laminated onto a flexible substrate stack, the flexible substrate stack including a current collector or a separator layer; as well as The patterned alkali-containing metal layer is stacked and separated from the flexible support layer.

10. The method of claim 9, wherein the one or more lasers are directed through the back side of the polymer substrate.

11. The method of claim 9, wherein exposing a portion of the alkali-containing metal layer to the one or more lasers creates a void volume between the alkali-containing metal layer and the flexible support layer stack.

12. The method of claim 9, further comprising heating the alkali-containing metal layer prior to patterning the alkali-containing metal layer.

13. The method of claim 9, wherein laminating the alkali-containing metal layer onto the flexible substrate stack comprises applying pressure to one or more of the flexible substrate stack and the flexible support layer stack.

14. The method of claim 9, wherein the flexible support layer stack further comprises a release layer formed between the flexible support layer and the alkali metal layer.

15. The method of claim 14, wherein the release layer comprises a polymeric material capable of photoinduced depolymerization.

16. The method of claim 9, wherein the polymer substrate is a roll-to-roll polymer substrate, and the current collector or the separator is a roll-to-roll substrate.

17. A method for forming a membrane stack of an energy storage device, comprising: An alkali-containing metal layer is laminated onto a flexible substrate stack, the alkali-containing metal layer being formed on a flexible support layer stack, the flexible support layer stack including a polymer substrate, the alkali-containing metal layer being formed above the front side of the polymer substrate; The alkali-containing metal layer is patterned by exposing a portion of the alkali-containing metal layer to one or more lasers, while pressure is applied to one or more of the flexible substrate stack and the flexible support layer stack. as well as The exposed portion of the alkali-containing metal layer is transferred from the flexible support layer stack to the flexible substrate stack, the flexible substrate stack including a current collector or a separator layer.

18. The method of claim 17, wherein the one or more lasers are directed through the back side of the polymer substrate.

19. The method of claim 18, wherein a portion of the alkali-containing metal layer is exposed to the one or more lasers to generate a void volume between the alkali-containing metal layer and the flexible support layer stack.

20. The method of claim 17, further comprising heating the alkali-containing metal layer prior to patterning the alkali-containing metal layer.

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