True random number generator and chip
By combining a spin torque nano-oscillation unit and a phase-locked loop module, the problems of randomness bias and external magnetic field interference in the true random number generator are solved, generating high-quality random number sequences and improving the robustness of the true random number generator.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-03
- Publication Date
- 2026-03-31
AI Technical Summary
The randomness in the entropy source of existing true random number generators is biased and correlated, resulting in weak robustness of the generated random number sequences, which are easily affected by external magnetic fields.
A spin torque nano-oscillation unit and a phase-locked loop module are used to generate an output signal through the spin-transmitted torque effect, and the feedback loop of the phase-locked loop module is used to eliminate external magnetic field interference and generate a random number sequence.
It generates highly random number sequences, enhances the robustness of the true random number generator, resists external magnetic field interference, and improves the quality of the random number sequences.
Smart Images
Figure CN121764446A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of true random number generation technology, and in particular to a true random number generator and chip. Background Technology
[0002] A True Random Number Generator (TRNG) is a device that generates truly unpredictable random numbers based on physical phenomena. The entropy source of a TRNG is typically chosen from unpredictable sources of randomness, such as noise in electronic components, nuclear decay in quantum mechanics, and clock jitter in oscillators. These physical phenomena can be used as the entropy source. However, the randomness in general entropy sources exhibits certain biases and correlations. How to generate highly random number sequences is a problem that urgently needs to be solved. Summary of the Invention
[0003] This application provides a true random number generator and chip to solve at least one of the aforementioned technical problems.
[0004] The true random number generator according to this application includes a phase-locked loop (PLL) module and a trigger module. The PLL module includes a spin torque nano-oscillation unit. The input terminal of the PLL module is used to receive a reference signal, and the output terminal of the PLL module is connected to the trigger module. The phase-locked loop module is used to obtain an output signal based on the spin-transmitted torque effect of the spin torque nano-oscillation unit according to the reference signal and the feedback signal, wherein the feedback signal is the signal fed back from the output signal to the input terminal; The triggering module is used to sample the output signal based on the reference signal to generate a random number sequence.
[0005] In some embodiments, the spin torque nano-oscillation unit includes a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer stacked sequentially. The non-magnetic layer is used to isolate the first ferromagnetic layer and the second ferromagnetic layer. The magnetization direction of the first ferromagnetic layer is fixed, and the magnetization direction of the second ferromagnetic layer is adjustable.
[0006] In some embodiments, the phase-locked loop module further includes a charge pump unit connected between the input terminal and the spin torque nano-oscillation unit; The charge pump unit is used to output a differential current to the spin torque nano-oscillation unit, and the spin torque nano-oscillation unit is used to perform current-to-microwave conversion on the differential current to obtain the output signal.
[0007] In some embodiments, the phase-locked loop module further includes a frequency and phase discrimination unit connected between the input terminal and the charge pump unit; The frequency and phase discrimination unit is used to compare and process the reference signal and the feedback signal to obtain a comparison result, and control the differential current output by the charge pump unit according to the comparison result.
[0008] In some embodiments, the charge pump unit includes a first current source and a second current source, and the frequency and phase discrimination unit is used to control the conduction time of the first current source and the second current source according to the comparison result, so as to control the differential current output by the charge pump unit.
[0009] In some implementations, the frequency and phase detection unit includes a first trigger subunit, a second trigger subunit, and a logic gate subunit; The first trigger subunit is used to determine the first control signal based on the reference signal; The second trigger subunit is used to determine the second control signal based on the feedback signal; The logic gate subunit is used to control the reset of the first trigger subunit and the second trigger subunit according to the first control signal and the second control signal; The frequency and phase discrimination unit is used to control the conduction time of the first current source according to the first control signal, and to control the conduction time of the second current source according to the second control signal.
[0010] In some embodiments, the phase-locked loop module further includes a loop filter unit connected between the charge pump unit and the spin torque nano-oscillation unit; The charge pump unit is used to output the differential current to the loop filter unit; The loop filter unit is used to filter the difference current and output the filtered difference current to the spin torque nano-oscillation unit.
[0011] In some embodiments, the phase-locked loop module further includes a frequency division unit connected between the spin torque nano-oscillation unit and the input terminal; The frequency division unit is used to perform frequency division processing on the output signal to obtain the feedback signal.
[0012] In some implementations, the differential current has a current range of 1.4-2.4 mA.
[0013] The chip in this application includes a true random number generator according to any of the above embodiments.
[0014] In the true random number generator and chip of this application, the phase-locked loop module obtains an output signal based on the spin-transmitted torque effect of the spin torque nano-oscillation unit according to the reference signal and the feedback signal. The trigger module samples the output signal based on the reference signal to generate a random number sequence. In this way, a random number sequence with strong randomness can be generated, eliminating the influence of sampling and external magnetic field interference on the random number sequence, and enhancing the robustness of the true random number generator.
[0015] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description
[0016] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort. Among them: Figure 1 This is a schematic diagram of the structure of a true randomness generator in related technologies; Figure 2 This is a schematic diagram of the structure of a true randomness generator according to certain embodiments of this application; Figure 3 This is a schematic diagram of the structure of a spin torque nano-oscillation unit according to certain embodiments of this application; Figure 4 This is a schematic diagram of a chip module according to certain embodiments of this application.
[0017] Explanation of reference numerals in the attached figures: The system includes a true random number generator 100, a phase-locked loop module 10, a spin torque nano-oscillation unit 11, a first ferromagnetic layer 111, a non-magnetic layer 112, a second ferromagnetic layer 113, a charge pump unit 12, a first current source 121, a second current source 122, a first switch 123, a second switch 124, a frequency and phase discrimination unit 13, a first trigger subunit 131, a second trigger subunit 132, a logic gate unit 133, a loop filter unit 14, a frequency divider unit 15, an input terminal 16, an output terminal 17, a trigger module 20, and a chip 1000. Detailed Implementation
[0018] The embodiments of this application are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.
[0019] True random number generators differ from pseudo-random number generators (PRNGs). True random number generators utilize physical processes such as electronic noise and photon effects to ensure that the generated random numbers are completely random and unpredictable. They are widely used in encryption technology, authentication, and secure communication to guarantee the confidentiality and integrity of data or systems.
[0020] A good design of a true random number generator depends on the quality of three modules: entropy source, entropy extraction, and post-processing. In related technologies, the structural design of a true random number generator can be as follows: Figure 1 As shown. The entropy source of a true random number generator is chosen from an unpredictable source of randomness; however, the randomness in a typical entropy source exhibits a certain bias and correlation.
[0021] Therefore, please refer to Figure 2 This application provides a true random number generator 100. The true random number generator 100 includes a phase-locked loop (PLL) module 10 and a trigger module 20. The PLL module 10 includes a spin torque nano-oscillation unit 11. The input terminal 16 of the PLL module 10 is used to receive a reference signal, and the output terminal 17 of the PLL module 10 is connected to the trigger module 20. The PLL module 10 is used to obtain an output signal based on the spin-transmitted torque effect of the spin torque nano-oscillation unit 11, according to the reference signal and a feedback signal. The feedback signal is the signal fed back from the output signal to the input terminal 16. The trigger module 20 is used to sample the output signal based on the reference signal to generate a random number sequence.
[0022] In the true random number generator 100 of this embodiment, the phase-locked loop module 10 obtains an output signal based on the spin-transmitted torque effect of the spin torque nano-oscillation unit 11, according to a reference signal and a feedback signal. The trigger module 20 samples the output signal based on the reference signal to generate a random number sequence. This generates a highly random number sequence, eliminates the influence of sampling and external magnetic field interference on the random number sequence, and enhances the robustness of the true random number generator 100.
[0023] Specifically, the true random number generator 100 includes a phase-locked loop (PLL) module and a trigger module 20. The PLL module 10 includes a spin-torque nano-oscillator (STNO) unit 11. The input terminal 16 of the PLL module 10 is used to receive an externally input reference signal and a feedback signal fed back by the spin-torque nano-oscillator unit 11.
[0024] The reference signal and feedback signal are processed in the phase-locked loop module 10 to generate a spin transfer torque (STT) effect in the spin torque nano-oscillation unit 11, resulting in an output signal, which can be a microwave oscillation signal. The feedback signal is the signal that feeds the output signal back to the input terminal 16. The phase-locked loop module 10 has a feedback control function, which can control the frequency and phase of the output signal through the reference signal, realizing automatic tracking of the output signal frequency to the reference signal frequency.
[0025] The output terminal 17 of the phase-locked loop module 10 is connected to the trigger module 20. The output signal of the spin torque nano-oscillation unit 11 can be output to the trigger module 20, and the trigger module 20 can also receive externally input reference signals. The trigger module 20 can be a D flip-flop.
[0026] like Figure 2 As shown, the trigger module 20 includes a clock input terminal CK, a data input terminal D, and a data output terminal Q. The clock input terminal CK is used to receive a reference signal, that is, to use the reference signal as a reference clock. The data input terminal D is used to receive the output signal, and the data output terminal Q is used to output a random number sequence. The trigger module 20 can sample the output signal at the edge (rising edge or falling edge) of the reference signal and output a random number sequence.
[0027] In related technologies, the design of a true random number generator 100 based on a ring oscillator requires a post-processing module. Since the output of the original random sequence is not random, there is always the influence of sequence bias; if the output is the entropy after oversampling, the result will be biased to "1" or biased to "0". Complex algorithms must be added to the post-processing module to eliminate the bias or determinism in the random sequence as much as possible, which makes the algorithm overhead of the entire system too large and the robustness of the random number sequence weak.
[0028] In this embodiment, a spin torque nano-oscillation unit 11 is used to replace the ring oscillator, and the clock jitter of the spin torque nano-oscillation unit 11 is used as an entropy source. Compared with the ring oscillator, the spin torque nano-oscillation unit 11 has the following advantages: smaller size, which is more conducive to monolithic integration systems; higher resonant frequency, resulting in higher output throughput of the true random number generator 100; greater phase noise, resulting in stronger randomness of the random number sequence; lower power consumption, resulting in better overall energy efficiency.
[0029] However, the sequence bias problem caused by the sampling structure of the trigger module 20 still exists. In addition, the spin torque nano-oscillation unit 11 is greatly affected by the external magnetic field, and its resonant frequency is prone to shift. Therefore, a phase-locked loop module 10 based on the spin torque nano-oscillation unit 11 is used to replace the post-processing module. The feedback loop formed inside the phase-locked loop module 10 can eliminate the influence of sampling and external magnetic field interference on the random number sequence, thereby enhancing the robustness of the true random number generator 100.
[0030] Please see Figure 2 In some embodiments, the phase-locked loop module 10 further includes a frequency and phase discrimination unit 13, which is connected between the input terminal 16 and the charge pump unit 12. The frequency and phase discrimination unit 13 is used to compare and process the reference signal and the feedback signal to obtain a comparison result, and control the differential current output by the charge pump unit 12 according to the comparison result.
[0031] Specifically, the phase-locked loop module 10 also includes a phase-frequency detector (PFD) unit 13, which is connected between the input terminal 16 and the charge pump unit 12 (described in detail later). The PFD unit 13 can receive an externally input reference signal and a feedback signal from the spin torque nano-oscillation unit 11, and compare the reference signal and the feedback signal, comparing their time-domain phases to obtain a comparison result. The comparison result is output to the charge pump unit 12, and the PFD unit 13 can control the differential current output by the charge pump unit 12 based on the comparison result.
[0032] The working process of charge pump unit 12 is described in detail below.
[0033] Please see Figure 2 In some embodiments, the phase-locked loop module 10 further includes a charge pump unit 12, which is connected between the input terminal 16 and the spin torque nano-oscillation unit 11. The charge pump unit 12 is used to output a differential current to the spin torque nano-oscillation unit 11, and the spin torque nano-oscillation unit 11 is used to perform current-to-microwave conversion on the differential current to obtain an output signal.
[0034] Specifically, the phase-locked loop module 10 also includes a charge pump, with charge pump unit 12 connected between input terminal 16 and spin torque nano-oscillation unit 11. Charge pump unit 12 receives the comparison result output from frequency and phase discrimination unit 13 and outputs a difference current. Different difference currents can be output based on different comparison results. The difference current is output to spin torque nano-oscillation unit 11. Based on the spin-transmitted torque effect of spin torque nano-oscillation unit 11, the difference current undergoes current-to-microwave conversion in spin torque nano-oscillation unit 11 to obtain the output signal.
[0035] Please see Figure 2 In some embodiments, the charge pump unit 12 includes a first current source 121 and a second current source 122. The frequency and phase discrimination unit 13 is used to control the conduction time of the first current source 121 and the second current source 122 according to the comparison result, so as to control the differential current output by the charge pump unit 12.
[0036] Specifically, the charge pump unit 12 includes a first current source 121 and a second current source 122, as well as a first switch 123 and a second switch 124. The first switch 123 controls the on and off states of the first current source 121, and the second switch 124 controls the on and off states of the second current source 122. The frequency and phase discrimination unit 13 can control the on and off states of the first switch 123 and the second switch 124 based on the comparison result, thereby controlling the on-time of the first current source 121 and the second current source 122, and thus controlling the differential current output by the charge pump unit 12. The differential current is the difference between the output current of the first current source 121 and the output current of the second current source 122.
[0037] It should be noted that the charge pump unit 12, through precise matching of the current source, directly maps the comparison result of the frequency and phase discrimination unit 13 into a linear differential current output. Compared with the phase error-control voltage conversion, this can improve the phase difference conversion efficiency and enhance dynamic performance.
[0038] Please see Figure 2 In some embodiments, the frequency and phase discrimination unit 13 includes a first trigger subunit 131, a second trigger subunit 132, and a logic gate subunit 133. The first trigger subunit 131 is used to determine a first control signal based on a reference signal. The second trigger subunit 132 is used to determine a second control signal based on a feedback signal. The logic gate subunit 133 is used to control the reset of the first trigger subunit 131 and the second trigger subunit 132 according to the first and second control signals. The frequency and phase discrimination unit 13 is used to control the on-time of the first current source 121 according to the first control signal and the on-time of the second current source 122 according to the second control signal.
[0039] Specifically, the frequency and phase detection unit 13 includes a first trigger subunit 131, a second trigger subunit 132, and a logic gate subunit 133. The specific structures of the first trigger subunit 131, the second trigger subunit 132, and the logic gate subunit 133 can be configured according to actual conditions. In one example, both the first trigger subunit 131 and the second trigger subunit 132 can be D flip-flops, and the logic gate subunit 133 can be a NAND gate. In other examples, the logic gate subunit 133 can also be an AND gate.
[0040] The following describes in detail the operation of the frequency and phase discrimination unit 13, taking the example where both the first trigger subunit 131 and the second trigger subunit 132 use D flip-flops and the logic gate subunit 133 uses a NAND gate. The first clock terminal of the first trigger subunit 131 is used to receive the reference signal, and the first data terminal can be connected to a high level. Before the rising edge of the reference signal arrives, the state of the first trigger subunit 131 remains unchanged; when the rising edge of the reference signal arrives, the first output terminal of the first trigger subunit 131 is set to the state of the first data terminal input, that is, the output is high.
[0041] The second clock terminal of the second trigger subunit 132 is used to receive the feedback signal, and the second data terminal can be connected to a high level. Before the rising edge of the feedback signal arrives, the state of the second trigger subunit 132 remains unchanged; when the rising edge of the feedback signal arrives, the second output terminal of the second trigger subunit 132 is set to the state of the second data terminal input, that is, the output is high level.
[0042] The first output terminal of the first trigger subunit 131 is connected to the third input terminal of the logic gate subunit 133, and the second output terminal of the second trigger subunit 132 is connected to the fourth input terminal of the logic gate subunit 133. The first reset terminal of the first trigger subunit 131 and the second reset terminal of the second trigger subunit 132 are both connected to the logic output terminal of the logic gate subunit 133. When both the first trigger subunit 131 and the second trigger subunit 132 output a high level, the logic gate subunit 133 outputs a high level, resetting both the first trigger subunit 131 and the second trigger subunit 132.
[0043] Thus, by using the first trigger subunit 131, the second trigger subunit 132, and the logic gate subunit 133 to compare the time-domain phases of the reference signal and the feedback signal, the first trigger subunit 131 outputs the first control signal "up" based on the reference signal, and the second trigger subunit 132 outputs the second control signal "down" based on the feedback signal. Both the first control signal "up" and the second control signal "down" can be rectangular pulse signals. The first control signal "up" and the second control signal "down" are the results of the comparison described above. The first control signal "up" and the second control signal "down" reflect the time-domain phase difference between the reference signal and the feedback signal.
[0044] The frequency and phase discrimination unit 13 can control the on / off state of the first switch 123 corresponding to the first current source 121 according to the first control signal up, and control the on / off state of the second switch 124 corresponding to the second current source 122 according to the second control signal down. For example, when the first control signal up is high, the first switch 123 is on, and when the first control signal up is low, the first switch 123 is off. The on / off time is determined according to the pulse width of the first control signal.
[0045] The frequency and phase discrimination unit 13 controls the conduction time of the first current source 121 by controlling the first switch 123 based on the first control signal "up"; the frequency and phase discrimination unit 13 controls the conduction time of the second current source 122 by controlling the second switch 124 based on the second control signal "down". Through the above control process, the time-domain phase difference between the reference signal and the feedback signal is converted into the output current of the charge pump unit 12. When there is no time-domain phase difference between the reference signal and the feedback signal, the differential current output by the charge pump unit 12 is zero.
[0046] Please see Figure 2 and Figure 3 In some embodiments, the spin torque nano-oscillation unit 11 includes a first ferromagnetic layer 111, a non-magnetic layer 112, and a second ferromagnetic layer 113 stacked sequentially. The non-magnetic layer 112 is used to isolate the first ferromagnetic layer 111 and the second ferromagnetic layer 113. The magnetization direction of the first ferromagnetic layer 111 is fixed, and the magnetization direction of the second ferromagnetic layer 113 is adjustable.
[0047] Specifically, the spin torque nano-oscillation unit 11 adopts a nanoscale magnetic multilayer film structure, including a first ferromagnetic layer 111, a non-magnetic layer 112, and a second ferromagnetic layer 113, which are stacked sequentially from bottom to top. The magnetization direction of the first ferromagnetic layer 111 is fixed, but the magnetization direction can be as follows: Figure 3 As indicated by the middle arrow A, the non-magnetic layer 112 is located between the first ferromagnetic layer 111 and the second ferromagnetic layer 113, and is used to isolate the first ferromagnetic layer 111 and the second ferromagnetic layer 113.
[0048] The magnetization direction of the second ferromagnetic layer 113 is relatively free and can be controlled by an external magnetic field or current. The magnetization direction of the second ferromagnetic layer 113 can be as follows: Figure 3 As indicated by arrow B, angle θ represents the angle between the magnetization direction of the second ferromagnetic layer 113 and the vertical direction. The magnetization direction of the second ferromagnetic layer 113 can also be as follows: Figure 3 As indicated by the middle arrow C, it could also be in other directions.
[0049] The spin torque nano-oscillation unit 11 receives the differential current generated by the charge pump unit 12. This differential current flows perpendicularly through the spin torque nano-oscillation unit 11 in the direction from the first ferromagnetic layer 111 to the second ferromagnetic layer 113. The differential current passing through the first ferromagnetic layer 111 forms a spin-polarized current. This spin-polarized current passes through the non-magnetic layer 112 and generates a spin-transmitted torque effect in the second ferromagnetic layer 113, adjusting the magnetization oscillation characteristics of the second ferromagnetic layer 113, controlling the resonant frequency of the spin torque nano-oscillation unit 11, realizing current-to-microwave conversion, and obtaining an output signal.
[0050] Please see Figure 2 In some embodiments, the phase-locked loop module 10 further includes a loop filter unit 14, which is connected between the charge pump unit 12 and the spin torque nano-oscillation unit 11. The charge pump unit outputs the differential current to the loop filter unit. The loop filter unit filters the differential current and outputs the filtered differential current to the spin torque nano-oscillation unit.
[0051] Specifically, the phase-locked loop module 10 also includes a loop filter unit 14, which may include capacitors and resistors. The loop filter unit 14 is connected between the charge pump unit 12 and the spin torque nano-oscillation unit 11. When the charge pump unit outputs a differential current, the loop filter unit 14 can filter the differential current, removing high-frequency components and retaining low-frequency components. After filtering, the loop filter unit 14 then inputs the differential current into the spin torque nano-oscillation unit 11 for current-to-microwave conversion. This suppresses noise and ripple in the differential current, thereby improving the quality of the output signal.
[0052] Please see Figure 2 In some embodiments, the phase-locked loop module 10 further includes a frequency divider unit connected between the spin torque nano-oscillation unit 11 and the input terminal 16. The frequency divider unit is used to perform frequency division processing on the output signal to obtain a feedback signal.
[0053] Specifically, the phase-locked loop module 10 also includes a frequency divider unit. The frequency division ratio of the frequency divider unit is an integer and can be set to any integer according to actual conditions. For example, the frequency divider unit can be set to divide by 2, 3, 4, or 5, etc. The frequency divider unit is connected between the spin torque nano-oscillation unit 11 and the input terminal 16. The output signal of the spin torque nano-oscillation unit 11 can be input to the frequency divider. The frequency divider performs frequency division processing on the output signal to obtain a feedback signal, and sends the feedback signal to the input terminal 16 of the phase-locked loop module 10, thereby forming a feedback loop. This facilitates the subsequent comparison and processing of the feedback signal with the reference signal, reduces the influence of noise, and avoids the occurrence of integer boundary spurious phenomena.
[0054] In some implementations, the loop bandwidth of the phase-locked loop module 10 is one-twentieth of the resonant frequency of the spin torque nano-oscillation unit 11.
[0055] In related technologies, the phase-locked loop circuit synchronizes the output signal of the oscillator with the input reference signal, causing the output signal to lag behind the reference signal by a fixed time-domain delay. This time-domain delay results in a large amount of bias in the random number sequence sampled by the D flip-flop, destroying the randomness of the output sequence.
[0056] In this embodiment, by controlling and adjusting the parameters in the phase-locked loop module 10, such as the capacitance and resistance values in the loop filter unit 14 and the division ratio of the frequency divider unit, the loop bandwidth of the phase-locked loop module 10 can be made to be one-twentieth of the resonant frequency of the spin torque nano-oscillation unit 11, so that the phase-locked loop module 10 is in a metastable state between unlocking and locking. Metastable state refers to the phase-locked loop module 10 being in a critically stable state, which is highly sensitive to small disturbances (such as changes in magnetic field).
[0057] In this way, the phase difference between the output signal of the spin torque nano-oscillation unit 11 and the reference signal can be guaranteed to be random, thereby eliminating the random number sequence bias caused by the trigger module 20, essentially avoiding the occurrence of the bias situation, and effectively ensuring the randomness of the random number sequence.
[0058] In some implementations, the differential current ranges from 1.4 to 2.4 mA.
[0059] Specifically, the feedback loop of the metastable phase-locked loop module 10 can compensate for the influence of the external magnetic field on the spin torque nano-oscillation unit 11 in real time, enabling the spin torque nano-oscillation unit 11 to operate stably, and controlling the differential current input to the spin torque nano-oscillation unit 11 within the range of 1.4-2.4mA. This avoids interference and damage to the random number sequence caused by the external magnetic field, improving the stability of the true random number generator 100.
[0060] Please see Figure 4 The chip 1000 of this application includes the true random number generator 100 of any of the above embodiments.
[0061] Specifically, chip 1000 may include an integrated circuit and a true random number generator. There are no restrictions on the type of chip 1000; for example, chip 1000 may be a secure smart card chip 1000, a cryptographic chip 1000, or a general-purpose processor chip 1000. By integrating a true random number generator 100 into chip 1000, high-quality random number sequences can be directly output without relying on algorithms. This effectively resists attacks based on algorithmic prediction, providing crucial support for cryptography, security authentication, and other scenarios, thus improving the security of chip 1000.
[0062] In summary, in the true random number generator 100 and chip 1000 of this application, the phase-locked loop module 10 obtains the output signal based on the spin-transmitted torque effect of the spin torque nano-oscillation unit 11 according to the reference signal and the feedback signal. The trigger module 20 samples the output signal based on the reference signal to generate a random number sequence. In this way, a highly random number sequence can be generated, eliminating the influence of sampling and external magnetic field interference on the random number sequence, and enhancing the robustness of the true random number generator 100.
[0063] In the description of this application, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more features. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.
[0064] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.
[0065] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0066] The foregoing disclosure provides many different embodiments or examples for implementing different structures of this application. To simplify the disclosure, specific examples of components and arrangements are described above. Of course, these are merely examples and are not intended to limit the scope of this application. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, examples of various specific processes and materials are provided in this application, but those skilled in the art will recognize the application of other processes and / or the use of other materials.
[0067] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," and "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with an embodiment or example that are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.
[0068] Although embodiments of this application have been shown and described above, those skilled in the art will understand that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.
Claims
1. A true random number generator, characterized in that, The system includes a phase-locked loop (PLL) module and a trigger module. The PLL module includes a spin torque nano-oscillation unit. The input terminal of the PLL module is used to receive a reference signal, and the output terminal of the PLL module is connected to the trigger module. The phase-locked loop module is used to obtain an output signal based on the spin-transmitted torque effect of the spin torque nano-oscillation unit according to the reference signal and the feedback signal, wherein the feedback signal is the signal fed back from the output signal to the input terminal; The triggering module is used to sample the output signal based on the reference signal to generate a random number sequence.
2. The true random number generator according to claim 1, characterized in that, The spin torque nano-oscillation unit includes a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer stacked sequentially. The non-magnetic layer is used to isolate the first ferromagnetic layer and the second ferromagnetic layer. The magnetization direction of the first ferromagnetic layer is fixed, while the magnetization direction of the second ferromagnetic layer is adjustable.
3. The true random number generator according to claim 1, characterized in that, The phase-locked loop module also includes a charge pump unit, which is connected between the input terminal and the spin torque nano-oscillation unit. The charge pump unit is used to output a differential current to the spin torque nano-oscillation unit, and the spin torque nano-oscillation unit is used to perform current-to-microwave conversion on the differential current to obtain the output signal.
4. The true random number generator according to claim 3, characterized in that, The phase-locked loop module further includes a frequency and phase discrimination unit, which is connected between the input terminal and the charge pump unit. The frequency and phase discrimination unit is used to compare and process the reference signal and the feedback signal to obtain a comparison result, and control the differential current output by the charge pump unit according to the comparison result.
5. The true random number generator according to claim 4, characterized in that, The charge pump unit includes a first current source and a second current source. The frequency and phase discrimination unit is used to control the conduction time of the first current source and the second current source according to the comparison result, so as to control the differential current output by the charge pump unit.
6. The true random number generator according to claim 5, characterized in that, The frequency and phase detection unit includes a first trigger subunit, a second trigger subunit, and a logic gate subunit; The first trigger subunit is used to determine the first control signal based on the reference signal; The second trigger subunit is used to determine the second control signal based on the feedback signal; The logic gate subunit is used to control the reset of the first trigger subunit and the second trigger subunit according to the first control signal and the second control signal; The frequency and phase discrimination unit is used to control the conduction time of the first current source according to the first control signal, and to control the conduction time of the second current source according to the second control signal.
7. The true random number generator according to claim 3, characterized in that, The phase-locked loop module also includes a loop filter unit, which is connected between the charge pump unit and the spin torque nano-oscillation unit; The charge pump unit is used to output the differential current to the loop filter unit; The loop filter unit is used to filter the difference current and output the filtered difference current to the spin torque nano-oscillation unit.
8. The true random number generator according to any one of claims 1-7, characterized in that, The phase-locked loop module further includes a frequency division unit, which is connected between the spin torque nano-oscillation unit and the input terminal; The frequency division unit is used to perform frequency division processing on the output signal to obtain the feedback signal.
9. The true random number generator according to claim 6, characterized in that, The differential current has a current range of 1.4-2.4mA.
10. A chip, characterized in that, Includes the true random number generator as described in any one of claims 1-9.