Method, circuit, system and medium for testing total ionizing radiation dose and electromagnetic pulse coordination effect

Abstract

The invention discloses a method, a circuit, a system and a medium for testing a total ionizing radiation dose and an electromagnetic pulse coordination effect, and relates to the technical field of anti-nuclear and radiation hardening, and the method comprises the steps: obtaining an electrical characteristic curve of a to-be-tested transistor before irradiation and a response waveform under the action of a single electromagnetic pulse; performing at least one preset dose of irradiation on the to-be-tested transistor until the accumulated irradiation dose of the to-be-tested transistor reaches the preset total dose, and obtaining an electrical characteristic curve of the to-be-tested transistor and a response waveform of the to-be-tested transistor under the action of a single electromagnetic pulse after each irradiation, obtaining an electrical characteristic curve and a response waveform of the transistor to be detected under each accumulated irradiation dose; and based on the obtained electrical characteristic curve and the response waveform, analyzing the total ionizing radiation dose of the transistor to be detected and the electromagnetic pulse coordination effect.

Description

Technical Field

[0001] This application relates to the field of nuclear and radiation hardening technology, and more particularly to a method, circuit, system, and medium for testing the total dose of ionizing radiation and the electromagnetic pulse co-effect. Background Technology

[0002] Electronic systems in extreme environments such as spacecraft in orbit, nuclear power plants, and charged particle accelerators are often simultaneously exposed to cumulative ionizing radiation and transient electromagnetic radiation, posing a significant threat to their reliability. As fundamental electronic components, transistors, particularly their failure mechanisms and performance degradation under extreme conditions, are of significant research value for understanding the behavior of electronic systems in such environments. Therefore, in-depth research on the synergistic effect of total ionizing radiation dose and electromagnetic pulses in transistors has important engineering and scientific value. However, current research largely focuses on the effects of transistors under the combined influence of total ionizing radiation dose and continuous wave electromagnetic radiation, while research on the synergistic effect of total ionizing radiation dose and a single electromagnetic pulse in more realistic transient interference scenarios remains lacking. Summary of the Invention

[0003] This application provides a method, circuit, system, and medium for testing the total dose of ionizing radiation and the co-occurrence effect of electromagnetic pulse.

[0004] In a first aspect, embodiments of this application provide a method for testing the total dose of ionizing radiation and the co-occurrence effect of electromagnetic pulses, comprising: acquiring the electrical characteristic curve of the transistor under test before irradiation and the response waveform of the transistor under test under a single electromagnetic pulse; irradiating the transistor under test with at least one preset dose until the cumulative irradiation dose of the transistor under test reaches the preset total dose, and acquiring the electrical characteristic curve of the transistor under test and the response waveform of the transistor under test under a single electromagnetic pulse after each irradiation, thereby obtaining the electrical characteristic curve and response waveform of the transistor under test under each cumulative irradiation dose; and analyzing the total dose of ionizing radiation and the co-occurrence effect of electromagnetic pulses of the transistor under test based on the acquired electrical characteristic curve and response waveform.

[0005] Secondly, embodiments of this application provide a measurement circuit for measuring the response waveform of a transistor under a single pulse. The measurement circuit includes: a transistor access terminal for connecting a transistor under test (TUT), the transistor access terminal including: a collector terminal configured to be connected to the collector of the TUT; a base terminal configured to be connected to the base of the TUT; and an emitter terminal configured to be connected to the emitter of the TUT; a DC bias module including: a first resistor connected in series with the collector terminal, a second resistor connected in series with the base terminal, a third resistor connected in series with the emitter terminal, and a decoupling inductor connected in series with the first resistor; a power supply terminal for connecting a DC power supply, the power supply terminal including: a first terminal configured to connect a first electrode of the DC power supply to the first resistor; and a second terminal configured to connect a second electrode of the DC power supply to the decoupling inductor; and a pulse injection module including: a pulse injection terminal for connecting an electric fast pulse generator (EFP), a high-voltage attenuator connected to the pulse injection terminal, and a coupling capacitor connected to the high-voltage attenuator, the coupling capacitor being connected in series with the first resistor and in parallel with the decoupling inductor.

[0006] Thirdly, embodiments of this application provide a measurement circuit for measuring the response waveform of a transistor under a single pulse. The measurement circuit includes: a transistor access terminal for connecting a transistor under test (TUT), the transistor access terminal including: a collector terminal configured to be connected to the collector of the TUT; a base terminal configured to be connected to the base of the TUT; and an emitter terminal configured to be connected to the emitter of the TUT; a DC bias module including: a first resistor connected in series with the collector terminal, a second resistor connected in series with the base terminal, a third resistor connected in series with the emitter terminal, and a decoupling inductor connected in series with the first resistor; a power supply terminal for connecting a DC power supply, the power supply terminal including: a first terminal configured to connect a first electrode of the DC power supply to a second resistor; and a second terminal configured to connect a second electrode of the DC power supply to the decoupling inductor; and a pulse injection module including: a pulse injection terminal for connecting an electric fast pulse generator (EFP), a high-voltage attenuator connected to the pulse injection terminal, and a coupling capacitor connected to the high-voltage attenuator, the coupling capacitor being connected in series with the second resistor and in parallel with the decoupling inductor.

[0007] Fourthly, embodiments of this application provide a system for measuring the total dose of ionizing radiation and the co-occurrence effect of an electrical pulse, comprising: an irradiation platform for irradiating a transistor under test with a preset dose; a semiconductor parameter analyzer for measuring the electrical characteristics of the transistor under test; an electrical fast pulse generator for injecting a single electromagnetic pulse into the transistor under test; a first measurement circuit board for measuring the response waveform of the transistor under test under a single pulse, the first measurement circuit board including the measurement circuit in the above embodiments; a second measurement circuit board for measuring the response waveform of the transistor under test under a single pulse, the second measurement circuit board including the measurement circuit in the above embodiments; and an oscilloscope for acquiring the response waveform of the transistor under test under a single pulse.

[0008] Fifthly, embodiments of this application provide a non-transient computer storage medium storing a computer program. When the computer program is executed by a processor, it implements the test method for the total dose of ionizing radiation and the electromagnetic pulse co-effect described in the above embodiments.

[0009] The testing method for the total ionizing radiation dose and electromagnetic pulse co-effect of this application combines a single electromagnetic pulse with ionizing radiation to simulate the real-world operating conditions of transistors encountering a superposition of "long-term performance degradation" and "instantaneous strong interference" in a radiation environment. The method acquires the electrical characteristic curves of the transistor under test (TUT) before irradiation and its response waveform under a single electromagnetic pulse. The TUT is then irradiated until the cumulative irradiation dose reaches a preset total dose, and the electrical characteristic curves and response waveforms of the TUT at different cumulative irradiation doses are acquired. Based on the acquired electrical characteristic curves, the co-effect of the total ionizing radiation dose and electromagnetic pulse of the TUT is analyzed. By experimentally measuring the changing trends of the transistor's electrical characteristics and response waveforms under ionizing radiation and instantaneous electromagnetic pulses, the performance changes of the transistor in transient interference scenarios involving total ionizing radiation dose and a single electromagnetic pulse can be reflected. Based on this, in-depth research can be conducted on the co-effect of the total ionizing radiation dose and electromagnetic pulse of the transistor and its underlying physical mechanisms, filling a technological gap in the research field of the co-effect of total ionizing radiation dose and electromagnetic pulse, and possessing significant engineering and scientific value.

[0010] Other features and advantages of this application will be set forth in the following description, and will be apparent in part from the description, or may be learned by practicing the application. Other advantages of this application can be realized and obtained by means of the solutions described in the description and the accompanying drawings. Attached Figure Description

[0011] The accompanying drawings are used to provide an understanding of the technical solutions of this application and constitute a part of the specification. They are used together with the embodiments of this application to explain the technical solutions of this application and do not constitute a limitation on the technical solutions of this application.

[0012] Figure 1 This is a schematic flowchart of an embodiment of the test method for the total dose of ionizing radiation and the concordance effect of electromagnetic pulse according to this application; Figure 2 This is a schematic diagram of the structure of one embodiment of the measurement circuit of this application; Figure 3 This is a schematic diagram of the structure of one embodiment of the measurement circuit of this application; Figure 4 This is a schematic diagram of the system for measuring the total dose of ionizing radiation and the co-occurrence effect of the electrical pulse, as described in this application. Detailed Implementation

[0013] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in detail below with reference to the accompanying drawings. It should be noted that, unless otherwise specified, the embodiments and features described in these embodiments can be arbitrarily combined with each other.

[0014] The embodiments described in this application are not necessarily limited to the dimensions shown in the accompanying drawings, and the shapes and sizes of the components in the drawings do not reflect actual proportions. Furthermore, the drawings schematically illustrate ideal examples, and the embodiments described in this application are not limited to the shapes or values ​​shown in the drawings.

[0015] The ordinal numbers such as "first" and "second" in this application are used to avoid confusion among the constituent elements and do not indicate any order, quantity, or importance.

[0016] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; a mechanical connection or an electrical connection; a direct connection, an indirect connection via an intermediate component, or a connection within two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0017] like Figure 1 As shown in the embodiment of this application, a method for testing the total dose of ionizing radiation and the co-occurrence effect of electromagnetic pulse is provided, which may include the following steps.

[0018] Step 110: Obtain the electrical characteristic curve of the transistor under test before irradiation and the response waveform under a single electromagnetic pulse.

[0019] In this embodiment, the transistor under test can be a bipolar transistor.

[0020] As an example, before irradiating the transistor under test, the electrical characteristic curve of the transistor under test can be measured using a semiconductor parameter analyzer. A single electromagnetic pulse is injected into the transistor under test using the single-pulse mode of an electrical fast pulse generator, and then the response waveforms of one or more electrodes of the transistor under test (e.g., one or more of the collector, base, and emitter) are acquired.

[0021] Step 120: Irradiate the transistor under test with a preset dose at least once until the cumulative irradiation dose of the transistor under test reaches the preset total dose, and after each irradiation, acquire the electrical characteristic curve of the transistor under test and the response waveform of the transistor under test under a single electromagnetic pulse, so as to obtain the electrical characteristic curve and response waveform of the transistor under test under each cumulative irradiation dose.

[0022] As an example, an irradiation platform can be used to irradiate the transistor under test with a preset dose. Then, a semiconductor parameter analyzer is used to measure the electrical characteristic curve of the irradiated transistor. Next, an electric fast pulse generator is used to inject a single electromagnetic pulse into the transistor, and the response waveforms of one or more electrodes of the transistor are acquired. If the cumulative irradiation dose of the transistor under test has not reached the preset total dose, the irradiation platform is used again to irradiate the transistor with the preset dose, and the electrical characteristic curve and response waveform under a single electromagnetic pulse are measured again. If the cumulative irradiation dose of the transistor under test reaches the preset total dose, the measurement is stopped. In this way, the electrical characteristic curves and response waveforms of the transistor under test at different cumulative irradiation doses can be obtained.

[0023] In some optional embodiments of this example, acquiring the electrical characteristic curve of the transistor under test and the response waveform of the transistor under test under a single electromagnetic pulse after each irradiation includes: completing the measurement of the transistor under test within a preset time period after each irradiation to acquire the electrical characteristic curve of the transistor under test and the response waveform of the transistor under test under a single electric pulse, wherein the preset time period is not greater than the shortest time required for the transistor under test to exhibit an annealing effect after irradiation.

[0024] As an example, the shortest time required for the annealing effect to appear after irradiation of the transistor under test (TUT) can be 2 hours, so the preset time period can be 2 hours. Therefore, the electrical characteristic curve and response waveform under a single electromagnetic pulse of the TUT can be measured within 2 hours after each irradiation. This suppresses the interference of the annealing effect on the measurement results, thereby improving measurement accuracy.

[0025] In some optional implementations of this embodiment, the transistor under test can be irradiated multiple times according to a preset total dose. After each irradiation of the transistor under test with the preset dose, the electrical characteristic curve of the transistor under test and the response waveform under a single electromagnetic pulse are obtained.

[0026] In this embodiment, performing multiple rounds of irradiation and measurement on a single transistor under test can avoid the influence of individual differences in transistors on the measurement results, and help improve the accuracy and consistency of the measured data.

[0027] Step 130: Based on the obtained electrical characteristic curves and response waveforms, analyze the total ionizing radiation dose and electromagnetic pulse co-current effect of the transistor under test.

[0028] As an example, based on the obtained electrical characteristic curves and response waveforms, the degradation of electrical characteristics and changes in pulse response under different radiation doses can be compared and analyzed to reveal the law of the total ionizing radiation dose and electromagnetic pulse co-effect of the transistor under test.

[0029] For example, simulation software can be combined with the obtained electrical characteristic curves and response waveforms to conduct in-depth research on the mechanism of the total ionizing radiation dose and electromagnetic pulse co-effect of the transistor under test.

[0030] In some optional embodiments of this example, step 130 may include: constructing a model of the total ionizing radiation dose and electromagnetic pulse co-effect of the transistor under test based on the acquired electrical characteristic curve and response waveform, and correcting the model; determining the trend of electrical characteristic degradation and pulse response change of the transistor under test under different dose irradiation based on the prediction results of the model and the acquired electrical characteristic curve and response waveform, so as to analyze the total ionizing radiation dose and electromagnetic pulse co-effect of the transistor under test.

[0031] As an example, based on some acquired data (such as electrical characteristic curves and response waveforms under one or more doses of irradiation), simulation software can establish an initial model of the total ionizing radiation dose and electromagnetic pulse co-effect of the transistor under test. Then, based on additional data, the initial model can be corrected to obtain a more accurate model. Subsequently, the model can be used to predict the electrical characteristic curves and response waveforms of the transistor under test under multiple doses of irradiation, and compared with the electrical characteristic curves and response waveforms obtained in step 120 at the corresponding doses. This allows for the determination of the degradation of electrical characteristics and the trend of pulse response changes of the transistor under test under different doses of irradiation, and further analysis of the total ionizing radiation dose and electromagnetic pulse co-effect of the transistor under test.

[0032] In this embodiment, experimental measurements can be combined with simulation modeling. The measured data can be used to calibrate model parameters, improving model accuracy. Using simulation results to explain and analyze the total ionizing radiation dose and electromagnetic pulse co-effect of the transistor under test (TUT) forms a complete research loop from "phenomenon" to "mechanism" to "prediction." This facilitates a more scientific and in-depth study of the total ionizing radiation dose and electromagnetic pulse co-effect of TUT, not only revealing the apparent effect patterns but also elucidating the internal physical mechanisms leading to performance degradation, such as carrier transport and gain attenuation, providing a direct theoretical basis for ruggedized design.

[0033] exist Figure 1 In the illustrated embodiment, combining a single electromagnetic pulse (EMI) with ionizing radiation can simulate the real-world operating conditions of a transistor encountering a superposition of "long-term performance degradation" and "instantaneous strong interference" in a radiation environment. The electrical characteristic curves of the transistor under test (TUT) before irradiation and its response waveform under a single EMI are acquired. The TUT is then irradiated until the cumulative irradiation dose reaches a preset total dose, and the electrical characteristic curves and response waveforms of the TUT at different cumulative irradiation doses are acquired. Based on the acquired electrical characteristic curves, the synergistic effect of the total ionizing radiation dose and the EMI on the TUT is analyzed. By experimentally measuring the changing trends of the transistor's electrical characteristics and response waveforms under ionizing radiation and instantaneous EMI, the performance changes of the transistor in transient interference scenarios involving total ionizing radiation dose and a single EMI can be reflected. Based on this, in-depth research can be conducted on the synergistic effect of the total ionizing radiation dose and the EMI on the TUT and its underlying physical mechanisms, filling a technological gap in the research field of the synergistic effect of total ionizing radiation dose and the EMI on the TUT, and possessing significant engineering and scientific value.

[0034] In some optional embodiments of this example, the response waveform of the transistor under test under a single electromagnetic pulse can be obtained by: injecting a single electromagnetic pulse into the base of the transistor under test and acquiring the response waveforms of the collector, base and emitter of the transistor under test respectively; or injecting a single electromagnetic pulse into the collector of the transistor under test and acquiring the response waveforms of the collector, base and emitter of the transistor under test respectively.

[0035] As an example, an electrical fast pulse generator can be set to single-pulse mode, and a single electromagnetic pulse can be injected into the base of the transistor under test. At the same time, the response waveforms of the base, collector, and emitter of the transistor under test can be acquired using a multi-channel oscilloscope. Then, a single electromagnetic pulse can be injected into the collector of the transistor under test using the electrical fast pulse generator, and the response waveforms of the base, collector, and emitter of the transistor under test can be acquired using a multi-channel oscilloscope.

[0036] In this embodiment, by changing the pulse injection point, the response waveforms of the transistor under test under different stress conditions and operating modes can be obtained, which helps to comprehensively evaluate the robustness of the synergistic effect of the transistor under test under different stress conditions and operating modes.

[0037] In an optional example of this embodiment, when injecting a single electromagnetic pulse into the base and collector of the transistor under test using an electric fast pulse generator, the output voltage amplitude of the electric fast pulse generator can be varied, for example, it can include 200V, 300V, 600V, etc., so that the single electromagnetic pulse injected into the base and collector of the transistor under test can include electromagnetic pulses of various amplitudes. In this way, the response model of the transistor under test under different voltage amplitudes can be obtained, which helps to comprehensively evaluate the robustness of the transistor under test to the co-current effect under different stress conditions and operating modes.

[0038] Meanwhile, using the pulse waveforms and electrical characteristic parameters measured in experiments, a model was established and calibrated in simulation software. By comparing the differences between simulation and experimental results, the intrinsic physical mechanism of the concordance effect was analyzed and verified in depth.

[0039] like Figure 2 As shown, this application embodiment also provides a measurement circuit for measuring the response waveform of a transistor under a single pulse. The measurement circuit includes: a transistor access terminal 210 for connecting the transistor under test (TUT), the transistor access terminal 210 including: a collector terminal 211 configured to be connected to the collector of the TUT; a base terminal 212 configured to be connected to the base of the TUT; and an emitter terminal 213 configured to be connected to the emitter of the TUT; and a DC bias module including: a first resistor 220 connected in series with the collector terminal 211 (e.g., ...). Figure 2 In R C ), and the second resistor 230 connected in series with the base terminal 212 (such as Figure 2 In R B ), and the third resistor 240 connected in series with the transmitting terminal 213 (such as Figure 2 In R E ) and the decoupling inductor 250 connected in series with the first resistor 220 (e.g. Figure 2 In L); power terminals for connecting to a DC power supply, the power terminals including: a first terminal 260 configured to connect a first electrode of the DC power supply to a second resistor 230; and a second terminal 270 configured to connect a second electrode of the DC power supply to a decoupling inductor 250; a pulse injection module 280 including: a pulse injection terminal 281 for connecting to an electric fast pulse group generator, a high-voltage attenuator 282 connected to the pulse injection terminal 281, and a coupling capacitor 283 (e.g., ...) connected to the high-voltage attenuator 282. Figure 2 In C The coupling capacitor 283 is connected in series with the first resistor 220 and in parallel with the decoupling inductor 250.

[0040] The following is combined Figure 2 The measurement process is illustrated by example. The transistor under test (e.g., Figure 2 The collector, base, and emitter of the transistor under test (DUT) are connected to collector terminal 211, base terminal 212, and emitter terminal 213, respectively, to connect the DUT to the measurement circuit. The electrodes of the DC power supply are connected to the first terminal 260 and the second terminal 270, respectively, to connect the DC power supply to the measurement circuit. The output terminal of the electrical fast pulse generator is connected to the pulse injection terminal 281, so that the single electromagnetic pulse output by the electrical fast pulse generator can reach the collector of the DUT via the high-voltage attenuator 282, coupling capacitor 283, and first resistor 220. The collector voltage of the DUT is then acquired using a high-impedance multi-channel oscilloscope (e.g., ...). Figure 2 In V C ), base voltage response (such as Figure 2 In V B ) and emitter voltage response (e.g. Figure 2 In V E By performing this operation, the response waveform of the transistor under test under a single electromagnetic pulse can be obtained. Furthermore, the oscilloscope can also acquire the voltage waveform between the decoupling inductor 250 and the first resistor 220 (e.g., ...). Figure 2 In V C0 By doing so, the voltage waveform of the electromagnetic pulse injected into the collector can be obtained.

[0041] In this process, the DC signal output by the DC power supply is coupled with the electromagnetic pulse signal output by the electric fast pulse generator at the first resistor 220. The decoupling inductor 250 can isolate the DC signal and the electromagnetic pulse signal, thereby avoiding damage to the DC power supply.

[0042] The measurement circuit in this embodiment only requires connection to the transistor under test, a DC power supply, and an electric fast pulse generator to inject a single electromagnetic pulse into the collector of the transistor to measure the response waveform of the transistor under the action of a single pulse, which helps to improve measurement efficiency and convenience.

[0043] like Figure 3 As shown, this application embodiment also provides a measurement circuit for measuring the response waveform of a transistor under a single pulse. The measurement circuit includes: a transistor access terminal 310 for connecting the transistor under test (TUT). The transistor access terminal 310 includes: a collector terminal 311 configured to be connected to the collector of the TUT; a base terminal 312 configured to be connected to the base of the TUT; and an emitter terminal 313 configured to be connected to the emitter of the TUT; and a DC bias module including: a first resistor 320 connected in series with the collector terminal 311 (e.g., ...). Figure 3 In R C ), and the second resistor 330 connected in series with the base terminal 312 (such as Figure 3 In R B ), and the third resistor 340 connected in series with the transmitting terminal 313 (such as Figure 3 In R E ) and the decoupling inductor 350 connected in series with the second resistor 320 (e.g. Figure 3 In L ); power terminals for connecting to a DC power supply, the power terminals including: a first terminal 360 configured to connect a first electrode of the DC power supply to a first resistor 320; and a second terminal 370 configured to connect a second electrode of the DC power supply to a decoupling inductor 350; a pulse injection module 380 including: a pulse injection terminal 381 for connecting to an electric fast pulse group generator, a high-voltage attenuator 382 connected to the pulse injection terminal 381, and a coupling capacitor 383 (e.g., ...) connected to the high-voltage attenuator 382. Figure 3 In C The coupling capacitor 383 is connected in series with the second resistor 340 and in parallel with the decoupling inductor 350.

[0044] The following is combined Figure 3 The measurement process is illustrated by example. The transistor under test (e.g., Figure 3The collector, base, and emitter of the transistor under test (DUT) are connected to collector terminal 311, base terminal 312, and emitter terminal 313, respectively, to connect the DUT to the measurement circuit. The electrodes of the DC power supply are connected to the first terminal 360 and the second terminal 370, respectively, to connect the DC power supply to the measurement circuit. The output terminal of the electrical fast pulse generator is connected to the pulse injection terminal 381, so that the single electromagnetic pulse output by the electrical fast pulse generator can reach the collector of the DUT via the high-voltage attenuator 382, ​​coupling capacitor 383, and second resistor 330. The collector voltage of the DUT is then acquired using a high-impedance multi-channel oscilloscope (e.g., ...). Figure 3 In V C ), base voltage response (such as Figure 3 In V B ) and emitter voltage response (e.g. Figure 3 In V E By performing a single electromagnetic pulse, the response waveform of the transistor under test can be obtained. Furthermore, the oscilloscope can also acquire the voltage waveform between the decoupling inductor 350 and the second resistor 330 (e.g., ...). Figure 3 In V B0 By doing so, the voltage waveform of the electromagnetic pulse injected into the base can be obtained.

[0045] In this process, the DC signal output by the DC power supply is coupled with the electromagnetic pulse signal output by the electric fast pulse generator at the second resistor 330. The decoupling inductor 350 can isolate the DC signal and the electromagnetic pulse signal, thereby avoiding damage to the DC power supply.

[0046] The measurement circuit in this embodiment only requires connection to the transistor under test, a DC power supply, and an electric fast pulse generator to inject a single electromagnetic pulse into the base of the transistor to measure the response waveform of the transistor under the action of a single pulse, which helps to improve measurement efficiency and convenience.

[0047] like Figure 4 As shown, this application embodiment also provides a system for measuring the total dose of ionizing radiation and the co-occurrence effect of an electrical pulse, comprising: an irradiation platform 410 for irradiating a transistor under test with a preset dose; a semiconductor parameter analyzer 420 for measuring the electrical characteristics of the transistor under test; an electrical fast pulse generator 430 for injecting a single electromagnetic pulse into the transistor under test; and a first measurement circuit board 440 for measuring the response waveform of the transistor under test under a single pulse, the first measurement circuit board 440 including: Figure 2 The measurement circuit in the illustrated embodiment includes a second measurement circuit board 450 for measuring the response waveform of the transistor under test under a single pulse. The second measurement circuit board 450 includes... Figure 3 The measurement circuit in the illustrated embodiment; and an oscilloscope 460 for acquiring the response waveform of the transistor under test under a single pulse.

[0048] The system for measuring the total dose of ionizing radiation and the electromagnetic pulse co-effect in this embodiment can realize the test method for the total dose of ionizing radiation and the electromagnetic pulse co-effect in any of the above embodiments. As an example, before irradiating the transistor under test, the electrical characteristic curve of the transistor under test can be obtained using a semiconductor parameter analyzer 420; then, the transistor under test, the electric fast pulse generator 430, and the oscilloscope 460 are connected to the first measurement circuit board 440. A single electromagnetic pulse is injected into the collector of the transistor under test using the electric fast pulse generator 430, and the response waveforms of the collector, base, and emitter of the transistor under test are acquired using the oscilloscope 460. The response waveform of the transistor under test before irradiation when a single electromagnetic pulse is injected into the collector can be obtained. Then, the transistor under test, the electrical fast pulse generator 430, and the oscilloscope 460 are connected to the second measurement circuit board 450. The electrical fast pulse generator 430 injects a single electromagnetic pulse into the base of the transistor under test, and the oscilloscope 460 collects the response waveforms of the collector, base, and emitter of the transistor under test. The response waveform of the crystal under test before irradiation when a single electromagnetic pulse is injected into the base can be obtained.

[0049] Next, the transistor under test (TUT) is placed on the irradiation platform 410. After the TUT is irradiated with a preset dose by the irradiation platform 410, the electrical characteristic curve of the TUT can be measured using a semiconductor parameter analyzer. Then, the response waveform of the irradiated TUT when a single electromagnetic pulse is injected into its collector is measured using the first measurement circuit board 440, and the response waveform of the irradiated TUT when a single electromagnetic pulse is injected into its base is measured using the second measurement circuit board 450. The irradiation and measurement operations are repeated until the cumulative irradiation dose of the TUT reaches the preset total dose, thus obtaining the electrical characteristic curves and response waveforms of the TUT under different irradiation doses.

[0050] The system for measuring the total dose of ionizing radiation and the co-occurrence effect of electromagnetic pulses in this embodiment can be used to measure the irradiation of transistors, single electromagnetic pulse injection, switching of pulse injection points, and electrical characteristic curves and response waveforms. This helps to improve the efficiency of acquiring data required for studying the total dose of ionizing radiation and the co-occurrence effect of electromagnetic pulses in transistors.

[0051] In some optional embodiments of this example, the first measurement circuit board 440 and the second measurement circuit board 450 are respectively provided with pluggable transistor clamps (not shown). When the transistor under test is inserted into the transistor clamp, the collector terminal, base terminal, and emitter terminal of the first or second measurement circuit board where the transistor clamp is located are connected to the collector, base, and emitter of the transistor under test, respectively.

[0052] As an example, a transistor fixture can integrate the collector terminal, base terminal, and emitter terminal in a measurement circuit into a pluggable mounting structure, such as a hole-like structure, with each pin corresponding to one of the collector terminal, base terminal, and emitter terminal. When the transistor pin is inserted into the corresponding hole, the transistor's collector, base, and emitter are connected to the corresponding terminals, thereby quickly connecting the transistor to the measurement circuit.

[0053] In this embodiment, the first measurement circuit board 440 and the second measurement circuit board 450 are respectively provided with pluggable transistor clamps, which can more conveniently connect and remove the transistor under test from the measurement circuit, and help to further improve the measurement efficiency.

[0054] This application also provides a non-transient computer storage medium storing a computer program. When the computer program is executed by a processor, it implements the test method for the total dose of ionizing radiation and the electromagnetic pulse co-effect in any of the above embodiments.

[0055] It will be understood by those skilled in the art that all or some of the steps, systems, or apparatuses disclosed above, and their functional modules / units, can be implemented as software, firmware, hardware, or suitable combinations thereof. In hardware implementations, the division between functional modules / units mentioned above does not necessarily correspond to the division of physical components; for example, a physical component may have multiple functions, or a function or step may be performed collaboratively by several physical components. Some or all components may be implemented as software executed by a processor, such as a digital signal processor or microprocessor, or as hardware, or as an integrated circuit, such as an application-specific integrated circuit (ASIC). Such software may be distributed on a computer-readable medium, which may include computer storage media (or non-transitory media) and communication media (or transient media). As is known to those skilled in the art, the term computer storage media includes volatile and non-volatile, removable and non-removable media implemented in any method or technology for storing information (such as computer-readable instructions, data structures, program modules, or other data). Computer storage media include, but are not limited to, RAM, ROM, EEPROM, flash memory or other memory technologies, CD-ROM, digital versatile disc (DVD) or other optical disc storage, magnetic cartridges, magnetic tape, disk storage or other magnetic storage devices, or any other medium that can be used to store desired information and can be accessed by a computer. Furthermore, it is well known to those skilled in the art that communication media typically contain computer-readable instructions, data structures, program modules, or other data in modulated data signals such as carrier waves or other transmission mechanisms, and may include any information delivery medium.

Claims

1. A method for testing the total dose of ionizing radiation and the co-occurrence effect of electromagnetic pulse, characterized in that, include: Obtain the electrical characteristic curves of the transistor under test before irradiation and the response waveform under a single electromagnetic pulse. The transistor under test is irradiated with a preset dose at least once until the cumulative irradiation dose of the transistor under test reaches the preset total dose. After each irradiation, the electrical characteristic curve of the transistor under test and the response waveform of the transistor under test under a single electromagnetic pulse are obtained to obtain the electrical characteristic curve and response waveform of the transistor under test under each cumulative irradiation dose. Based on the obtained electrical characteristic curves and response waveforms, the total ionizing radiation dose and electromagnetic pulse co-effect of the transistor under test are analyzed.

2. The method according to claim 1, characterized in that, After each irradiation, the electrical characteristic curves of the transistor under test and the response waveform of the transistor under test under a single electromagnetic pulse are acquired, including: The measurement of the transistor under test is completed within a preset time period after each irradiation to obtain the electrical characteristic curve of the transistor under test and the response waveform of the transistor under test under a single electrical pulse, wherein the preset time period is not greater than the shortest time required for the transistor under test to exhibit an annealing effect after irradiation.

3. The method according to claim 2, characterized in that, The response waveform of the transistor under test under a single electromagnetic pulse is obtained as follows: A single electromagnetic pulse is injected into the base of the transistor under test, and the response waveforms of the collector, base, and emitter of the transistor under test are collected respectively. A single electromagnetic pulse is injected into the collector of the transistor under test, and the response waveforms of the collector, base, and emitter of the transistor under test are collected respectively.

4. The method according to claim 3, characterized in that, The single electromagnetic pulse injected into the base and collector of the transistor under test includes electromagnetic pulses of various amplitudes.

5. The method according to claim 1, characterized in that, Based on the obtained electrical characteristic curves and response waveforms, the total ionizing radiation dose and electromagnetic pulse co-effect of the transistor under test are analyzed, including: Based on the obtained electrical characteristic curves and response waveforms, a model of the total ionizing radiation dose and electromagnetic pulse co-effect of the transistor under test is constructed, and the model is then corrected. Based on the prediction results of the model and the obtained electrical characteristic curves and response waveforms, the degradation of electrical characteristics and the trend of pulse response of the transistor under test under different doses of irradiation are determined, so as to analyze the total dose of ionizing radiation and the electromagnetic pulse co-effect of the transistor under test.

6. A measurement circuit for measuring the response waveform of a transistor under a single pulse, characterized in that, The measurement circuit includes: A transistor access terminal for connecting a transistor under test (TUT), the transistor access terminal comprising: a collector terminal configured to be connected to the collector of the TUT; a base terminal configured to be connected to the base of the TUT; and an emitter terminal configured to be connected to the emitter of the TUT. A DC bias module includes: a first resistor connected in series with the collector terminal, a second resistor connected in series with the base terminal, a third resistor connected in series with the emitter terminal, and a decoupling inductor connected in series with the first resistor; A power terminal for connecting a DC power supply, the power terminal comprising: a first terminal configured to connect a first electrode of the DC power supply to a second resistor; and a second terminal configured to connect a second electrode of the DC power supply to the decoupling inductor; The pulse injection module includes: a pulse injection terminal for connecting to an electric fast pulse group generator, a high-voltage attenuator connected to the pulse injection terminal, and a coupling capacitor connected to the high-voltage attenuator, wherein the coupling capacitor is connected in series with the first resistor and in parallel with the decoupling inductor.

7. A measurement circuit for measuring the response waveform of a transistor under a single pulse, characterized in that, The measurement circuit includes: A transistor access terminal for connecting a transistor under test (TUT), the transistor access terminal comprising: a collector terminal configured to be connected to the collector of the TUT; a base terminal configured to be connected to the base of the TUT; and an emitter terminal configured to be connected to the emitter of the TUT. A DC bias module includes: a first resistor connected in series with the collector terminal, a second resistor connected in series with the base terminal, a third resistor connected in series with the emitter terminal, and a decoupling inductor connected in series with the second resistor; A power terminal for connecting a DC power supply, the power terminal comprising: a first terminal configured to connect a first electrode of the DC power supply to the first resistor; and a second terminal configured to connect a second electrode of the DC power supply to the decoupling inductor; The pulse injection module includes: a pulse injection terminal for connecting to an electric fast pulse group generator, a high-voltage attenuator connected to the pulse injection terminal, and a coupling capacitor connected to the high-voltage attenuator, wherein the coupling capacitor is connected in series with the second resistor and in parallel with the decoupling inductor.

8. A system for measuring the total dose of ionizing radiation and the co-occurrence effect of an electrical pulse, characterized in that, include: An irradiation platform used to irradiate transistors under test with a preset dose; A semiconductor parameter analyzer used to measure the electrical characteristics of the transistor under test; An electrically fast pulse group generator for injecting a single electromagnetic pulse into the transistor under test; A first measurement circuit board for measuring the response waveform of the transistor under test under a single pulse, the first measurement circuit board comprising the measurement circuit of claim 6; A second measurement circuit board for measuring the response waveform of the transistor under test under a single pulse, the second measurement circuit board comprising the measurement circuit of claim 7; as well as, An oscilloscope used to acquire the response waveform of the transistor under test under a single pulse.

9. The system according to claim 8, characterized in that, The first measurement circuit board and the second measurement circuit board are respectively provided with pluggable transistor clamps. When the transistor under test is inserted into the transistor clamp, the collector terminal, base terminal, and emitter terminal of the first measurement circuit board or the second measurement circuit board where the transistor clamp is located are respectively connected to the collector, base, and emitter of the transistor under test.

10. A non-transient computer storage medium storing a computer program, characterized in that, When the computer program is executed by the processor, it implements the test method for the total dose of ionizing radiation and the concordance effect of electromagnetic pulse as described in any one of claims 1 to 6.

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