Preparation method for improving stability of solar cell module and cell module

Abstract

The invention relates to a preparation method for improving the stability of a solar cell module and the solar cell module. The preparation method sequentially comprises the following steps: providing a substrate with a transparent conductive bottom electrode; p1 laser scribing is carried out; sequentially forming a hole transport layer, a perovskite active layer and an electron transport layer on the substrate; depositing a first inorganic metal oxide layer on the electron transport layer; performing P2 laser scribing to expose the bottom electrode; depositing a second inorganic metal oxide layer on the surface of the whole device subjected to P2 laser scribing in a conformal manner; performing P3 laser scribing to isolate the top electrode of the sub-cell; and depositing a metal top electrode. Through a specific thin film deposition process, a compact protection layer is formed after P2 scribing, and direct contact between a metal electrode and a perovskite layer is effectively blocked, so that the long-term environmental stability of the module is remarkably improved, and meanwhile, the influence on the initial photoelectric conversion efficiency of the module is reduced as much as possible.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of solar cell modules, and particularly relates to a preparation method for improving the stability of a solar cell module and the solar cell module. BACKGROUND

[0002] In recent years, perovskite solar cells have been widely considered as one of the most promising candidates for the next generation of photovoltaic technology due to their flexible preparation process, wide light absorption range, long carrier diffusion length, and long carrier lifetime, which has attracted continuous attention from the research community. According to recent reports, the energy conversion efficiency of small-area laboratory perovskite cells has broken through 26%, and large-area modules (such as 1m x 2m specifications) have also achieved a conversion efficiency of over 18%.

[0003] Atomic layer deposition (ALD) is a derivative technology of chemical vapor deposition (CVD), and its core principle is to alternately and self-limitingly introduce gas-phase precursors into the reaction chamber, so that sequential chemical reactions occur on the substrate surface, thereby forming a uniform and dense thin film layer by layer. Due to its excellent film formation quality and consistency, this technology has been widely used in the manufacturing process of perovskite solar cells, especially in the deposition of tin oxide (SnO2) electron transport layers.

[0004] Perovskite solar cells (PSC) have a sandwich structure, which is composed of a layer of thin films. As shown in FIG. 1, the device preparation sequence is: conductive glass substrate → P1 scribe line → hole transport layer → perovskite absorber layer → electron transport layer → P2 scribe line → electrode → P3, P4 scribe line. Figure 1

[0005] In the development process of perovskite solar cells from small-area laboratory cells to large-area modules, the selection of metal electrode materials is crucial. However, there is a significant problem in existing metal electrode preparation technology: when preparing large-area modules, P2 and P3 laser scribing is required to achieve series connection of cell units. In the P2 scribe area, the metal electrode will directly contact the halide ions (such as I - ) in the perovskite active layer, causing a chemical reaction to form metal iodide, resulting in electrode corrosion, increased module series resistance, and rapid performance degradation, which seriously affects the long-term stability of the module.

[0006] Defects of the prior art: Poor stability: the silver in the P2 scribe area of the module reacts with the halogen ions in the perovskite to form AgI, causing rapid performance degradation of the module.

[0007] ​Lack of effective solutions: Existing technologies lack a simple method that can effectively prevent the electrodes from contacting the perovskite without significantly sacrificing the optoelectronic performance of the module and is suitable for large-area fabrication.

[0008] In view of the above-mentioned shortcomings, the designer actively researched and innovated in order to create a manufacturing method and battery module that improves the stability of solar cell modules, making them more valuable for industrial applications. Summary of the Invention

[0009] To address the aforementioned technical problems, the purpose of this invention is to provide a method for preparing a solar cell module and a battery module that improves the stability of the solar cell module.

[0010] To achieve the above objectives, the present invention adopts the following technical solution: One of the objectives of this invention is: A method for improving the stability of a solar cell module includes the following steps: Step 1: Provide a substrate with a transparent conductive bottom electrode and perform a pre-cleaning treatment; Step 2: Perform P1 laser scribing to define the bottom electrode of the module sub-cell; Step 3: Sequentially form a hole transport layer, a perovskite active layer, and an electron transport layer on the substrate; Step 4: Deposit the first inorganic metal oxide layer on the electron transport layer using atomic layer deposition (ALD) technology; Step 5: Perform P2 laser scribing to expose the bottom electrode; Step 6: Using atomic layer deposition (ALD) technology, a second inorganic metal oxide layer is conformally deposited on the entire device surface after P2 laser scribing. Step 7: Perform P3 laser scribing to isolate the top electrode of the sub-cell; Step 8: Deposit the metal top electrode.

[0011] As a further improvement of the present invention, the first inorganic metal oxide layer in step 4 and the second inorganic metal oxide layer in step 6 are both tin dioxide thin films.

[0012] As a further improvement of the present invention, the thickness of the first inorganic metal oxide layer is not less than the thickness of the second inorganic metal oxide layer; the thickness of the first inorganic metal oxide layer is 15~20nm, and the thickness of the second inorganic metal oxide layer is 5~15nm.

[0013] As a further improvement of the present invention, the thickness of the first inorganic metal oxide layer is 20 nm, and the thickness of the second inorganic metal oxide layer is 5 nm.

[0014] As a further improvement of the present invention, the atomic layer deposition process in step 4 is as follows: at a cavity temperature of 70~130°C, using tetradimethylaminotin as the tin source and water as the oxygen source, 70~90 cycles are performed to deposit the first inorganic metal oxide layer.

[0015] As a further improvement of the present invention, the atomic layer deposition process in step 6 is as follows: at a cavity temperature of 70~130°C, using tetradimethylaminotin as the tin source and water as the oxygen source, 15~25 cycles are performed to deposit the first inorganic metal oxide layer.

[0016] As a further improvement of the present invention, the process of depositing the hole transport layer in step 3 is as follows: spin-coating a PTAA solution or Al2O3 solution with a concentration of 0.5~2mg / mL onto the substrate after P1 laser scribing, spin-coating at a speed of 4000~6000rpm for 28~32 seconds, and then annealing at 80~120℃ for 8~12 minutes.

[0017] As a further improvement of the present invention, the process for depositing the perovskite active layer in step 3 is as follows: A FA concentration of 1~2M is applied using a blade coating method. 0.83 Cs 0.17 PbI 2.8 Cl 0.2 The perovskite precursor solution is coated onto the substrate at a rate of 3-5 cm / s, followed by vacuum flash evaporation for 16-20 seconds and annealing at 140-160°C for 12-16 minutes to form a perovskite thin film.

[0018] As a further improvement of the present invention, the process for depositing the electron transport layer in step 3 is as follows: spin-coating a PEAI solution with a concentration of 4 mg / mL and annealing, followed by thermal evaporation to deposit a 20-40 nm thick C layer. 60 The layer serves as an electron transport layer.

[0019] The second objective of this invention is: A battery module, which is prepared by any of the methods described above.

[0020] By means of the above-described solution, the present invention has at least the following advantages: This invention improves stability: the second SnO2 film, deposited conformally using ALD technology, completely covers the steep sidewalls and bottom of the P2 scribe line, forming a dense physical barrier that effectively blocks contact between the silver electrode and the perovskite layer, fundamentally inhibiting the AgI formation reaction. After being placed in a high-temperature, high-humidity environment (70-90% RH) for 350 hours, the unencapsulated module still retains over 75% efficiency, far superior to a single SnO2 layer module (efficiency retention of only 10%).

[0021] This invention achieves an optimized balance between performance and stability: by precisely controlling the thickness of the second SnO2 film at the nanometer level (especially 5 nm), it utilizes the quantum tunneling effect to ensure efficient current transmission, avoids a significant increase in series resistance, and provides sufficient coverage to achieve effective blocking. This allows the module to achieve a significant leap in stability with only a slight initial decrease in efficiency (e.g., from 18.00% to 17.73%).

[0022] The process compatibility and scalability of the present invention: The ALD process itself has excellent uniformity and consistency and is suitable for large-area deposition. It is compatible with the industrial preparation process of perovskite modules, easy to integrate into existing production lines, and has the potential for large-scale application.

[0023] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, the following are preferred embodiments of the present invention described in detail with reference to the accompanying drawings. Attached Figure Description

[0024] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a schematic diagram illustrating the working principle of existing technology; Figure 2 This is a schematic diagram illustrating the working principle of the present invention; Figure 3 This is a microscope image (front lighting) of the laser-scribed area after 10 days of placement in the first experimental example of this invention. Figure 4 This is a microscopic image of the laser-scribed area after 10 days of placement (front lighting) in the first comparative example of this invention. Figure 5 This is a microscope image (backlit) of the laser-scribed area after 10 days of placement in the first experimental example of this invention. Figure 6 This is a microscopic image of the laser-scribed area after 10 days of placement (backlit). This is the first comparative example of the present invention. Figure 7 This is a line graph showing the efficiency of the first experimental example and the first comparative example of the present invention over time. Detailed Implementation

[0026] The specific embodiments of the present invention will be described in further detail below with reference to the accompanying drawings and examples. The following examples are for illustrative purposes only and are not intended to limit the scope of the invention.

[0027] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0028] First embodiment of the present invention: This embodiment of a method for improving the stability of a solar cell module includes the following steps: Step 1: Provide a substrate with a transparent conductive bottom electrode and perform a pre-cleaning treatment.

[0029] Step 2: Perform P1 laser scribing to define the bottom electrode of the module sub-cell.

[0030] Step 3: Sequentially form a hole transport layer, a perovskite active layer, and an electron transport layer on the substrate.

[0031] The process for depositing the hole transport layer in step 3 is as follows: spin-coating a PTAA solution or Al2O3 solution with a concentration of 0.5~2mg / mL onto the substrate after P1 laser scribing, spin-coating at a speed of 4000~6000rpm for 28~32 seconds, and then annealing at 80~120℃ for 8~12 minutes.

[0032] The process for depositing the perovskite active layer in step 3 is as follows: A 1-2 M concentration of FA is applied using a blade coating method. 0.83 Cs 0.17 PbI 2.8 Cl 0.2 The perovskite precursor solution is coated onto the substrate at a rate of 3-5 cm / s, followed by vacuum flash evaporation for 16-20 seconds and annealing at 140-160°C for 12-16 minutes to form a perovskite thin film.

[0033] The process for depositing the electron transport layer in step 3 is as follows: spin-coating a PEAI solution with a concentration of 4 mg / mL and annealing, followed by thermal evaporation to deposit a 20-40 nm thick C layer. 60 The layer serves as an electron transport layer.

[0034] Step 4: Deposit the first inorganic metal oxide layer on the electron transport layer using atomic layer deposition (ALD) technology.

[0035] The atomic layer deposition process in step 4 is as follows: at a cavity temperature of 70~130℃, tetradimethylaminotin is used as the tin source and water is used as the oxygen source for 70~90 cycles to deposit the first inorganic metal oxide layer.

[0036] Step 5: Perform P2 laser scribing to expose the bottom electrode.

[0037] Step 6: Using atomic layer deposition (ALD) technology, a second inorganic metal oxide layer is deposited conformally on the entire device surface after P2 laser scribing.

[0038] The atomic layer deposition process in step 6 is as follows: at a cavity temperature of 70~130℃, tetramethylaminotin is used as the tin source and water is used as the oxygen source, and 15~25 cycles are performed to deposit the first inorganic metal oxide layer.

[0039] Step 7: Perform P3 laser scribing to isolate the top electrode of the subcell.

[0040] Step 8: Deposit the metal top electrode.

[0041] Both the first inorganic metal oxide layer in step 4 and the second inorganic metal oxide layer in step 6 are tin dioxide thin films.

[0042] The thickness of the first inorganic metal oxide layer is not less than the thickness of the second inorganic metal oxide layer; the thickness of the first inorganic metal oxide layer is 15~20nm, and the thickness of the second inorganic metal oxide layer is 5~15nm.

[0043] The thickness of the first inorganic metal oxide layer is 20 nm, and the thickness of the second inorganic metal oxide layer is 5 nm.

[0044] The core of this technical solution consists of a specific timing combination of step 5 (P2 line drawing) and step 6 (ALD deposition after P2): 1. Creativity in addressing technical problems: In existing technologies, P2 scribing is generally considered a simple patterning step to "form electrical interconnects." Industry concerns typically focus on scribing accuracy, damage to the thin film, and series resistance.

[0045] This invention is the first to propose and demonstrate that while the P2 scribing creates an electrical connection, it also creates a fatal "chemical interconnect" interface—a direct contact channel between the perovskite active layer sidewall and the metal electrode. This channel becomes a rapid pathway for halide ion migration and electrode corrosion reactions. Redefining the P2 step as "creating a highly reactive corrosion interface that urgently needs protection" is itself a significant deepening and innovation in the understanding of existing technical problems, and serves as the starting point for all subsequent solutions.

[0046] 2. Creativity of the solution: The combination of step 5 (P2 scribing) and step 6 (post-P2 ALD deposition) constitutes a "targeted in-situ remediation" process.

[0047] Step 6 (Repair) must immediately follow Step 5 (Destruction). If the order is reversed (i.e., depositing the ALD layer first and then scribing in P2), the newly deposited ALD layer will be destroyed during scribing, leaving the exposed perovskite sidewalls unprotected, and the purpose of the invention will be completely lost. If Step 6 is omitted, the problem remains unsolved.

[0048] The ALD deposition in step 6 is given a completely new and specialized function, namely "interface sealing," rather than its conventional role of "preparing a functional layer." This "functional redefinition" of the general process (ALD) and its placement at a specific time point to solve a specific problem constitutes a non-obvious inventive concept.

[0049] 3. Coordination with step 4: Although steps 4 (ALD deposition before P2) and 6 (ALD deposition after P2) use the same material (SnO2) and process (ALD), they constitute an ingenious "same material, different functions" functional system.

[0050] Step 4: Its main function is as an electron transport layer (ETL), which needs to ensure good carrier extraction and transport performance.

[0051] Step 6: Its main function is to act as a chemical barrier layer / interface sealing layer, which requires extremely high density and sidewall coverage.

[0052] The inherently contradictory requirements of "transmission" and "protection" (transmission requires thin films to reduce resistance, while protection requires thick and dense films to enhance barrier properties) are decoupled and achieved by "depositing the same material into thin films of different thicknesses at different times." This system-level design demonstrates a high degree of creativity.

[0053] The second embodiment of the present invention: This embodiment provides a battery module, which is prepared by any of the methods described above.

[0054] The third embodiment of the present invention: The core of this embodiment of a method for improving the stability of a solar cell module lies in using atomic layer deposition (ALD) technology to deposit an additional ultrathin tin dioxide (SnO2) film as a barrier layer after P2 laser scribing.

[0055] The method in this embodiment forms a dense protective layer after the P2 line is scribed using a specific thin film deposition process. This effectively blocks direct contact between the metal electrode and the perovskite layer, thereby significantly improving the long-term environmental stability of the module while minimizing the impact on the initial photoelectric conversion efficiency of the module.

[0056] like Figure 2 The specific technical solution includes the following steps: 1. Provide a substrate on which a transparent conductive oxide (such as ITO) is deposited; 2. Perform P1 laser scribing to define the bottom electrode of the module sub-cell; 3. Sequentially deposit a hole transport layer (such as PTAA, Al2O3), a perovskite active layer, and an electron transport layer (such as C) on the substrate. 60 ); 4. The first SnO2 thin film is deposited on the electron transport layer using atomic layer deposition (ALD) process; 5. Perform P2 laser scribing to expose the bottom electrode; 6. Using atomic layer deposition (ALD) technology, a second SnO2 thin film is deposited conformally on the entire surface of the structure after the P2 line is scribed; the thickness of the second SnO2 thin film is 5-15 nm, preferably 5 nm; 7. Perform P3 laser scribing to isolate the top electrode of the sub-cell; 8. Vaporized metal top electrode (such as silver electrode).

[0057] The atomic layer deposition process uses tetramethylaminotin (TDMASn) as the tin source and water (H2O) as the oxygen source. The temperature of the deposition chamber is controlled at 70-130℃ to obtain a high-quality SnO2 film with a dense surface and low roughness.

[0058] The key improvement in this embodiment is as follows: 1. The timing concept of "post-P2 deposition": This is not simply about depositing two layers of SnO2 on the module. The key is that the second SnO2 layer is deposited after the P2 laser scribing. This timing is crucial to ensuring that the thin film can cover the sidewalls and bottom exposed by the P2 scribing, thus forming a complete protective layer. If both layers are deposited before P2, they will not provide protection.

[0059] 2. Utilizing the "conformal coating" property of ALD technology: Atomic layer deposition (ALD) technology can deposit uniform, pinhole-free, and dense thin films on uneven and complex surfaces. This is the technological basis for achieving effective barrier properties. If other film deposition techniques (such as sputtering and evaporation) are used, it may be impossible to form a continuous and uniform film on the sidewalls, thus leaving corrosion channels.

[0060] 3. Balanced Design of the "Ultra-thin Dense Barrier Layer": Precisely controlling the thickness of the second SnO2 layer to the nanometer level (especially 5nm) ensures efficient current flow while achieving barrier function, utilizing the quantum tunneling effect to prevent a significant increase in series resistance (Rs) that would lead to a substantial drop in efficiency. By optimizing ALD process parameters (especially using a relatively low deposition temperature of 80℃), a SnO2 film with low surface roughness and high density was obtained, ensuring its excellent barrier performance and preventing halide ion penetration.

[0061] 4. The dual-layer design with "functional separation": Although the two SnO2 layers are made of the same material, they play different roles: the first layer (before P2) mainly acts as an electron transport layer (ETL), responsible for extracting and transporting electrons; the second layer (after P2) mainly acts as a barrier / protective layer, responsible for physical isolation and preventing corrosion. This idea of ​​separating the "transport" and "protection" functions and implementing them by different layers is the ingenious aspect of this embodiment.

[0062] First experimental example of the present invention: This experimental example illustrates a method for fabricating a perovskite solar module with a 5nm second SnO2 barrier layer: 1. Substrate preparation: Take a 5cm×5cm ITO glass substrate, clean and dry it, and then perform P1 laser scribing.

[0063] 2. Hole transport layer deposition: Spin-coat PTAA solution (1 mg / mL in CB) onto the scribe lined ITO substrate at 5000 rpm for 30 seconds, and then anneal at 100°C for 10 minutes.

[0064] 3. Perovskite layer deposition: The FA layer is deposited using a blade coating method. 0.83 Cs 0.17 PbI 2.8 Cl 0.2 A perovskite precursor solution (1.5 M) was coated onto the substrate at a rate of 4 cm / s, followed by vacuum flash evaporation for 18 seconds and annealing at 150 °C for 15 minutes to form a perovskite film.

[0065] 4. Interface Modification and Electron Transport Layer Deposition: Spin-coating with PEAI solution (4 mg / mL) followed by annealing. Subsequently, a 30 nm thick C layer was deposited via thermal evaporation. 60 The layer serves as an electron transport layer.

[0066] 5. Deposition of the first SnO2 layer: Using the ALD process, at a chamber temperature of 80°C, TDMASn and H2O are used as precursors to perform 80 cycles to deposit the first SnO2 film with a thickness of about 20 nm.

[0067] 6. P2 scribing: Perform P2 laser scribing to expose the bottom ITO electrode.

[0068] 7. Deposit the second SnO2 barrier layer: Using the same ALD process again, perform 20 cycles to deposit a second SnO2 film of about 5 nm thick on the entire sample surface after P2 scribing.

[0069] 8. P3 scribing and electrode fabrication: Perform P3 laser scribing, and finally deposit the metal top electrode to complete the module fabrication.

[0070] like Figure 7 The effect test of this experiment: The obtained module was subjected to JV test, and its initial efficiency was 17.73%. After the unencapsulated module was placed in an air environment (temperature 15-20℃, humidity 70-90% RH) for 350 hours, it was tested again, and its efficiency retention rate was still more than 75% of the initial efficiency, showing extremely high environmental stability.

[0071] The first comparative example of the present invention: This comparative example prepares a module with only a single layer of SnO2 (20nm, i.e., without a second barrier layer), and the other steps are exactly the same.

[0072] like Figure 7 The comparative test showed that the initial efficiency was 18.00%, but after being placed in the same environment for 350 hours, the efficiency retention rate plummeted to below 10%, indicating extremely poor stability.

[0073] like Figures 3-6 As shown: Figures 3-6 Images of the first experimental example and the first comparative example of the present invention were taken with an optical microscope after being placed in the air for 10 days (240 h).

[0074] As can be seen from the front-lit image after a certain period of time, the thinner the second layer of tin oxide in the module, the more perovskite on both sides of P2 is exposed, and the more metal is reacted.

[0075] From the backlit image, the thinner the second layer of tin oxide in the module, the more light penetrates through both sides of P2, and the more perovskite and metal are reacted and detached.

[0076] This demonstrates that the presence of a second layer of tin oxide significantly reduces the corrosion rate, and the thicker the second layer of tin oxide, the stronger its inhibitory effect on the corrosion reaction.

[0077] The above experimental examples and comparative examples fully demonstrate the remarkable effect and practical value of the double-layer ALD-SnO2 structure provided by this invention, especially the introduction of an ultra-thin second barrier layer, in significantly improving the environmental stability of perovskite solar modules.

[0078] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0079] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art will understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0080] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A method for improving the stability of a solar cell module, characterized in that, The steps are as follows: Step 1: Provide a substrate with a transparent conductive bottom electrode and perform a pre-cleaning treatment; Step 2: Perform P1 laser scribing to define the bottom electrode of the module sub-cell; Step 3: Sequentially form a hole transport layer, a perovskite active layer, and an electron transport layer on the substrate; Step 4: Deposit a first inorganic metal oxide layer on the electron transport layer using atomic layer deposition (ALD) technology; Step 5: Perform P2 laser scribing to expose the bottom electrode; Step 6: Using atomic layer deposition (ALD) technology, a second inorganic metal oxide layer is conformally deposited on the entire device surface after the P2 laser scribing is completed; Step 7: Perform P3 laser scribing to isolate the top electrode of the sub-cell; Step 8: Deposit the metal top electrode.

2. The method for improving the stability of a solar cell module as described in claim 1, characterized in that, Both the first inorganic metal oxide layer in step 4 and the second inorganic metal oxide layer in step 6 are tin dioxide thin films.

3. The method for improving the stability of a solar cell module as described in claim 1, characterized in that, The thickness of the first inorganic metal oxide layer is not less than the thickness of the second inorganic metal oxide layer; the thickness of the first inorganic metal oxide layer is 15~20nm, and the thickness of the second inorganic metal oxide layer is 5~15nm.

4. The method for improving the stability of a solar cell module as described in claim 3, characterized in that, The thickness of the first inorganic metal oxide layer is 20 nm, and the thickness of the second inorganic metal oxide layer is 5 nm.

5. The method for improving the stability of a solar cell module as described in claim 1, characterized in that, The atomic layer deposition process in step 4 is as follows: at a cavity temperature of 70~130℃, using tetradimethylaminotin as the tin source and water as the oxygen source, 70~90 cycles are performed to deposit the first inorganic metal oxide layer.

6. The method for improving the stability of a solar cell module as described in claim 1, characterized in that, The atomic layer deposition process in step 6 is as follows: at a cavity temperature of 70~130℃, tetramethylaminotin is used as the tin source and water is used as the oxygen source, and 15~25 cycles are performed to deposit the first inorganic metal oxide layer.

7. The method for improving the stability of a solar cell module as described in claim 1, characterized in that, The process of depositing the hole transport layer in step 3 is as follows: spin-coating a PTAA solution or Al2O3 solution with a concentration of 0.5~2mg / mL onto the substrate after P1 laser scribing, spin-coating at a speed of 4000~6000rpm for 28~32 seconds, and then annealing at 80~120℃ for 8~12 minutes.

8. The method for improving the stability of a solar cell module as described in claim 1, characterized in that, The process for depositing the perovskite active layer in step 3 is as follows: A 1-2 M concentration of FA is applied using a blade coating method. 0.83 Cs 0.17 PbI 2.8 Cl 0.2 The perovskite precursor solution is coated onto the substrate at a rate of 3-5 cm / s, followed by vacuum flash evaporation for 16-20 seconds and annealing at 140-160°C for 12-16 minutes to form a perovskite thin film.

9. The method for improving the stability of a solar cell module as described in claim 1, characterized in that, The process for depositing the electron transport layer in step 3 is as follows: spin-coating a PEAI solution with a concentration of 4 mg / mL and annealing, followed by thermal evaporation to deposit a 20-40 nm thick C layer. 60 The layer serves as an electron transport layer.

10. A battery module, characterized in that, The battery module is prepared by the method described in any one of claims 1 to 9.

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