Light sensing and signal modulation circuit based on group activation spectrum and light sensing system

Abstract

The invention discloses a light perception and signal modulation circuit based on a group activation spectrum. The light perception and signal modulation circuit comprises a photosensitive unit group module and a memristor modulation module, the photosensitive unit group module comprises a plurality of photosensitive units which are spatially distributed, and is used for sensing the illumination intensity of different spatial illumination distributions and generating photo-generated electric signals under the action of illumination; the memristor modulation module comprises at least one memristor and is used for performing group coupling modulation and unified coding on the photo-generated signals, so that the photo-generated signals corresponding to different spatial illumination distributions are represented as different electrical response modes at the output end; and finally, outputting an overall electrical activation characteristic spectrum related to the spatial illumination distribution through a single channel or a few channels. The circuit is compact in structure, high in device integration level, capable of obtaining distinguishable overall output characteristics without complex multichannel independent reading and external fusion circuits, high in response speed and high in information expression efficiency, and therefore power consumption is reduced, and the dynamic illumination mode recognition capacity is improved.

Description

Technical Field

[0001] This invention belongs to the field of electronic information technology, and specifically relates to a light sensing and signal modulation circuit and light sensing system based on population activation spectrum. Background Technology

[0002] In modern intelligent systems and neuromorphic computing, efficient environmental perception and information processing capabilities have become a core technological bottleneck. Especially in vision, optical sensing, and event-driven computing systems, the ability to perceive the spatial illumination distribution of complex scenes in real time and with high accuracy is crucial for tasks such as target recognition, motion detection, environmental monitoring, and autonomous navigation. To achieve this efficient perception, photoelectric array technology is the primary means of implementation, capable of converting spatial illumination information into processable electrical signals. However, traditional optical sensing devices typically rely on pixel-by-pixel sampling photoelectric arrays, where the photogenerated signal from each photosensitive unit is independently acquired and then fused and analyzed by external processing circuits. With the increase in sensing resolution and array size, this pixel-by-pixel, channel-by-channel acquisition method has significant limitations.

[0003] In existing technologies, group coding of spatial illumination signals typically employs two schemes: one is a word-line-bit-line scanning architecture, where each photosensitive unit is independently connected to the row and column selection lines, and the electrical signal of each pixel is read sequentially through scanning; the other is a multi-channel independent acquisition architecture, where each photosensitive unit corresponds to a dedicated detection channel, and the acquired signal is then processed digitally or analogly.

[0004] However, the above-mentioned solutions share common problems in implementation: on the one hand, their complex structure, dense wiring, and large number of components lead to high circuit integration difficulty and significantly increased power consumption; on the other hand, to characterize the overall features of spatial illumination, additional signal fusion or encoding circuits are required, increasing system latency and making it difficult to meet the requirements of event-driven and neuromorphic computing systems for fast response and sparse information processing. Furthermore, traditional solutions struggle to directly generate distinguishable overall output codes at the circuit level, failing to efficiently characterize different spatial illumination distribution patterns and limiting real-time response capabilities to dynamic illumination changes.

[0005] In practical applications, high-performance light sensing and spatial illumination coding systems have broad application prospects. For example, in the fields of autonomous driving and intelligent transportation, it is necessary to perceive the surrounding lighting and traffic signal environment in real time to guide autonomous decision-making; in neuromorphic vision sensors and robot vision systems, it is necessary to quickly capture dynamic lighting information under low power consumption to achieve event-driven perception; in environmental monitoring, industrial inspection, and wearable optical devices, efficient group illumination coding can reduce data transmission volume and processing latency, and improve the overall system efficiency. Therefore, there is an urgent need for a novel light sensing circuit structure that can achieve group perception of spatial illumination with a small number of components, has low system complexity and power consumption, and can improve the ability to distinguish dynamic lighting patterns and response speed, providing a feasible hardware solution for neuromorphic vision, event-driven optical sensing, and various intelligent light sensing systems. Summary of the Invention

[0006] To address the aforementioned problems in the prior art, this invention provides a photosensitive and signal modulation circuit and a photosensitive system based on population activation spectrum. The technical problem to be solved by this invention is achieved through the following technical solution: In a first aspect, the present invention proposes a photosensitive unit group module and a memristor modulation module based on population activation spectrum; wherein... The photosensitive unit group module includes multiple photosensitive units spatially distributed; each photosensitive unit is used to sense the light intensity of different spatial light distributions and generate different photoelectric signals under the action of light. The memristor modulation module includes at least one memristor, and the output terminals of multiple photosensitive units are electrically connected to the same modulation node of the memristor. The memristor performs group coupling modulation and unified encoding on the photogenerated electrical signals from multiple photosensitive units based on nonlinear conductivity and history dependence characteristics, so that the photogenerated electrical signals corresponding to different spatial illumination distributions exhibit different electrical response modes at the output terminal. Finally, the overall electrical activation characteristic spectrum related to the spatial illumination distribution is output through a single channel or a few channels.

[0007] In a second aspect, the present invention proposes a light sensing system, which includes the light sensing and signal modulation circuit based on population activation spectrum provided in the first aspect of the present invention.

[0008] The beneficial effects of this invention are: 1. The photosensitive unit group module and memristor modulation module provided by the present invention include a photosensitive unit group module and a memristor modulation module. The photosensitive unit group module includes multiple photosensitive units spatially distributed. Each photosensitive unit is used to sense the light intensity of different spatial light distributions and generate different photoelectric signals under the action of light. The memristor modulation module includes at least one memristor, and the output terminals of multiple photosensitive units are electrically connected to the same modulation node of the memristor. The memristor performs group coupling modulation and unified encoding on the photoelectric signals from multiple photosensitive units based on nonlinear conductivity characteristics and history dependence characteristics, so that the photoelectric signals corresponding to different spatial light distributions exhibit different electrical response modes at the output terminal, and finally outputs the overall electrical activation feature spectrum related to the spatial light distribution through a single channel or a few channels. This invention utilizes the photosensitive characteristics of photosensitive units and the nonlinear modulation and history-dependent characteristics of memristors to achieve group perception and unified encoding of spatial illumination distribution. It can obtain distinguishable overall output characteristics without the need for complex multi-channel independent readout and external fusion circuits. Moreover, the circuit structure is compact, the device integration is high, and the output signal produces a significant response when the illumination distribution changes, thereby reducing power consumption and improving the dynamic illumination pattern recognition capability.

[0009] 2. The light sensing and signal modulation circuit based on population activation spectrum provided by this invention is applicable to brain-like vision systems, event-driven optical sensors and other intelligent light sensing platforms, and can effectively improve system information compression efficiency and response speed.

[0010] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description

[0011] Figure 1 This is a block diagram of a light sensing and signal modulation circuit based on population activation spectrum provided in an embodiment of the present invention; Figure 2 This is an example diagram of a photosensitive unit group module provided in an embodiment of the present invention; Figure 3 This is an example diagram of a memristor modulation module provided in an embodiment of the present invention; Figure 4 An example diagram of a light sensing and signal modulation circuit based on population activation spectrum provided in an embodiment of the present invention; Figure 5 A schematic diagram of the light transfer characteristics of a phototransistor provided in an embodiment of the present invention; Figure 6 This is an actual test diagram of the output pulse voltage of the memristor modulation module provided in an embodiment of the present invention; Figure 7 for Figure 6 A magnified view of the output pulse voltage. Detailed Implementation

[0012] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described below are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0013] A first aspect of the present invention provides an optical sensing and signal modulation circuit based on population activation spectrum. See also... Figure 1 , Figure 1 The block diagram of the optical sensing and signal modulation circuit based on population activation spectrum provided in the embodiments of the present invention is mainly used to illustrate the overall circuit framework of the present invention and the connection relationship between each module. Figure 1 As shown, the photosensitive unit group module 101 and the memristor modulation module 102 provided by the present invention mainly include two modules: a photosensitive unit group module 101 and a memristor modulation module 102; wherein, The photosensitive unit group module 101 includes multiple photosensitive units spatially distributed; each photosensitive unit is used to sense the light intensity of different spatial light distributions and generate different photoelectric signals under the action of light. The memristor modulation module 102 includes at least one memristor, and the output terminals of multiple photosensitive units are electrically connected to the same modulation node of the memristor. The memristor performs group coupling modulation and unified encoding on the photogenerated electrical signals from multiple photosensitive units based on nonlinear conductivity characteristics and history dependence characteristics, so that the photogenerated electrical signals corresponding to different spatial illumination distributions exhibit different electrical response modes at the output terminal, and finally outputs the overall electrical activation characteristic spectrum related to the spatial illumination distribution through a single channel or a few channels.

[0014] Specifically, in this embodiment, the number of photosensitive units is not less than two, and multiple photosensitive units are spatially distributed in the form of one-dimensional, two-dimensional or irregular arrays to sense spatial illumination distribution information.

[0015] It should be noted that the multiple photosensitive units used in this embodiment can be any one of phototransistors (also referred to as photosensitive thin-film transistors in this embodiment), photodiodes, photoresistors, or any combination thereof.

[0016] Furthermore, multiple phototransistors can be similar transistors sensitive to the same wavelength of light, such as infrared or ultraviolet light; or they can be different types of transistors sensitive to different wavelengths of light.

[0017] Furthermore, it should be noted that among the multiple photosensitive units, at least two photosensitive units employ a structural parameter differentiation design. This structural differentiation design allows photosensitive units at different locations to generate photocurrents of different amplitudes under the same illumination conditions, thereby forming inherent differences in the group current response.

[0018] Optionally, in this embodiment, the differentiated design between photosensitive units can be reflected in at least one aspect of response gain, threshold, and connection weight.

[0019] As one implementation, this embodiment proposes a photosensitive unit group module 101, which includes multiple photosensitive transistors arranged in an M×N array; wherein, the gates of all photosensitive transistors are connected to the same gate voltage V. g All phototransistors have their drains connected to the same drain voltage V. d The sources of all phototransistors are connected to the modulation node V1 of the memristor modulation module as the output terminals of the photosensitive unit.

[0020] Furthermore, the multiple phototransistors distributed in the array are designed with differentiated structural parameters. In the column direction, phototransistors belonging to different columns have different channel lengths; in the row direction, phototransistors belonging to different rows have different threshold voltages.

[0021] For example, please see Figure 2 , Figure 2 This is an example diagram of a photosensitive unit group module provided in an embodiment of the present invention. Figure 2 In the array, the photosensitive unit group module 101 includes nine photosensitive transistors arranged in a 3×3 array structure. In the column direction, the channel lengths of each photosensitive transistor are different: the first column has a channel length of 10µm, the second column has a channel length of 20µm, and the third column has a channel length of 30µm. In the row direction, the threshold voltages of each photosensitive transistor are different: the first row has a threshold voltage of -0.5V, the second row has a threshold voltage of 0V, and the third row has a threshold voltage of +0.5V. This differentiated structural design allows the photosensitive thin-film transistors at different positions to generate photocurrents of different amplitudes under the same illumination conditions, thus creating an inherent difference in the group current response within the array.

[0022] For further details, please see Figure 3 , Figure 3 This is an example diagram of a memristor modulation module provided in an embodiment of the present invention. In one embodiment of the present invention, the memristor modulation module 102 includes a memristor and a load resistor R. load ;in, The first terminal of the memristor serves as the modulation node V1, connecting to the output terminals of multiple photosensitive units. The second terminal of the memristor is grounded through a load resistor and also serves as the output terminal V of the memristor modulation module 102. out .

[0023] Optionally, in this embodiment, the memristor can be a memristor based on oxide, electrochemical migration, phase transition, or ferroelectric mechanisms. Preferably, in this embodiment, a niobium oxide memristor is selected to implement the memristor modulation module 102. The niobium oxide memristor is a volatile memristor based on the Mott phase transition mechanism, and its conductivity state changes with the history of the electrical signal applied at the modulation node.

[0024] The photosensitive and signal modulation circuit based on the population activation spectrum provided in this embodiment utilizes multiple photosensitive units to sense the light intensity of different spatial illumination distributions and generate a population photoelectric signal. Then, the population photoelectric signal is converged to a memristor through modulation node V1 (i.e., the electrical node shared by multiple photosensitive units). The memristor performs nonlinear modulation on the population photoelectric signal from multiple photosensitive units so that the photoelectric signal corresponding to different spatial illumination distributions exhibits different electrical response modes at the output end. Finally, the overall electrical activation characteristic spectrum related to the spatial illumination distribution is output through a single channel.

[0025] In this embodiment, the electrical response mode includes at least one or more of the evolutionary features of voltage changing with time and current changing with time, thereby constituting a global electrical activation feature spectrum for characterizing spatial illumination distribution.

[0026] It should be noted that the light sensing and signal modulation circuit based on population activation spectrum proposed in this invention generates a significant electrical response when the light distribution changes, while maintaining a silent or low-change output under stable light conditions.

[0027] The following uses Figure 2 The photosensitive unit group module shown and Figure 3 The memristor modulation module shown constitutes the photosensitive and signal modulation circuit based on population activation spectrum of this invention, and is illuminated by a light source with a wavelength of 365nm for principle introduction and testing. Please refer to [link to relevant documentation]. Figure 4 , Figure 4 This is an example diagram of a photosensitive sensing and signal modulation circuit based on population activation spectrum provided in an embodiment of the present invention. In this circuit, each photosensitive crystal in the photosensitive unit group module is a transistor sensitive to ultraviolet light, and a niobium oxide memristor is used in the memristor modulation module. This memristor can undergo a reversible transition between a high-resistivity state and a low-resistivity state under the drive of an applied current, and generates self-oscillating behavior when the loop feedback condition is met. It should be noted that the oscillation in this embodiment is not generated solely by the memristor, but rather by the synergistic effect of a nonlinear closed loop composed of the photosensitive transistor array, the niobium oxide memristor, and the load resistor.

[0028] For details, please see Figure 5 , Figure 5 This is a schematic diagram illustrating the light transfer characteristics of a phototransistor provided in an embodiment of the present invention. It is primarily used to explain the electrical response characteristics of the phototransistor under different light intensities. Figure 5 As shown, under different light intensities, the phototransistor exhibits transfer characteristics that change significantly with increasing light intensity, and its drain current shows an increasing trend with light intensity. Under illumination, each phototransistor generates a photocurrent, which is then converged and injected into the niobium oxide memristor.

[0029] When the group photocurrent reaches the phase transition trigger condition of the memristor, the niobium oxide memristor enters a periodic phase transition process under the action of loop feedback, causing the loop to generate a stable self-excited oscillation signal. This oscillation signal is at the load resistance R load The two ends exhibit periodic voltage pulse output, realizing the conversion from current to voltage. Its actual test waveform is as follows: Figure 6 and Figure 7 As shown; where, Figure 6 The actual test diagram of the output pulse voltage of the memristor modulation module provided in the embodiment of the present invention is used to demonstrate the distinguishable output response generated by the circuit under different spatial illumination distribution conditions. Figure 7 for Figure 6 A magnified view of the output pulse voltage is shown to further demonstrate the detailed characteristics of the memristor modulation module's output signal in the time dimension.

[0030] In this invention, the main information carrier of the output signal is the oscillation frequency, and its corresponding frequency domain distribution is defined as the population activation spectrum. By performing spectral analysis on the voltage signal across the load resistor, the frequency encoding result corresponding to the illumination conditions can be obtained.

[0031] Under the condition of approximately the same total optical power, by changing the spatial distribution of light in the photosensitive thin-film transistor array, the magnitude and composition of the group photocurrent can be modulated, thereby obtaining different self-oscillation frequencies. For example, when the light is mainly distributed in the photosensitive thin-film transistor region with a long channel and a high threshold voltage, the group photocurrent is small, the phase transition period of the niobium oxide memristor is long, and the output exhibits low-frequency self-oscillation; when the light is mainly distributed in the photosensitive thin-film transistor region with a medium channel length or a medium threshold voltage, the group photocurrent is at a medium level, and the output exhibits medium-frequency self-oscillation; when the light is concentrated in the photosensitive thin-film transistor region with a short channel and a low threshold voltage, the group photocurrent increases significantly, the phase transition cycle of the niobium oxide memristor accelerates, and the output exhibits high-frequency self-oscillation.

[0032] Therefore, under the same optical power conditions, different spatial distributions of illumination can form a distinguishable spectral response at the output end, realizing the collective perception and frequency coding of illumination distribution information.

[0033] In a specific test embodiment, a stable illumination was first applied to the photosensitive thin-film transistor array, with an overall illumination intensity of approximately 0.5 mW / cm², and the illumination conditions were kept constant; subsequently, the gate voltage V was... g and drain voltage V dd Simultaneously, a pulse voltage signal with a frequency of 1kHz and a duty cycle of 50% is applied, where V g 2V, V d 5V, R load =10kΩ. Under the above conditions, the circuit will only generate a self-excited oscillation output when both light and voltage events are present simultaneously, with the output oscillation frequency ranging from 1.45 to 2.10MHz.

[0034] Furthermore, under the above test conditions, to verify the group response capability of the present invention to different spatial illumination distributions, while keeping the total optical power received by the array approximately consistent, the following different illumination distribution schemes were applied to the photosensitive thin-film transistor array: The illumination is mainly concentrated in the photosensitive thin-film transistor region in the 3rd row and 3rd column. Due to the long channel and high threshold voltage in this region, the group photocurrent is the smallest, and the circuit output is in the lowest frequency self-excited oscillation state. The oscillation frequency obtained by the test is 1.45MHz. The illumination is mainly concentrated in the photosensitive thin-film transistor area in the 3rd row and 2nd column. The group photocurrent is slightly higher, and the circuit output is in a low-frequency self-excited oscillation state. The oscillation frequency obtained by the test is 1.65MHz. The illumination is mainly concentrated in the photosensitive thin-film transistor area in the second row and third column. The group photocurrent is slightly higher, and the circuit output is in a low-frequency self-excited oscillation state. The oscillation frequency obtained by the test is 1.68MHz. The illumination is mainly concentrated in the photosensitive thin-film transistor area in the second row and second column. The group photocurrent is moderate, and the circuit output is in a low-to-medium frequency self-excited oscillation state. The oscillation frequency obtained by the test is 1.72MHz. The illumination is mainly concentrated in the photosensitive thin-film transistor region in the 3rd row and 1st column. The group photocurrent is low to medium, and the circuit output is in a low to medium bias high frequency self-excited oscillation state. The oscillation frequency obtained by the test is 1.80MHz. The illumination is mainly concentrated in the photosensitive thin-film transistor area in the second row and first column. The group photocurrent is moderately high, and the circuit output is in a medium-frequency self-excited oscillation state. The oscillation frequency obtained by the test is 1.82MHz. The illumination is mainly concentrated in the photosensitive thin-film transistor region in the first row and third column. The group photocurrent is low to medium, and the circuit output is in a medium to high frequency self-excited oscillation state. The oscillation frequency obtained by the test is 1.91MHz. The illumination is mainly concentrated in the photosensitive thin-film transistor area in the first row and second column. The group photocurrent is relatively high, and the circuit output is in a medium-high bias high-frequency self-excited oscillation state. The oscillation frequency obtained by the test is 2.00MHz. The illumination is mainly concentrated in the photosensitive thin-film transistor region of the first row and first column, where the group photocurrent is the largest and the circuit output is in a high-frequency self-excited oscillation state, with a measured oscillation frequency of 2.02MHz; When the light is concentrated simultaneously in the photosensitive thin-film transistor regions of the first row and first column and the first row and second column, the group photocurrent increases further, and the circuit output is in a high-frequency self-excited oscillation state with an upward bias. The oscillation frequency obtained by the test is 2.08MHz. When the light is concentrated simultaneously in the photosensitive thin-film transistor regions of the first row and first column, the first row and second column, and the second row and first column, the group photocurrent reaches its maximum, and the circuit output is in the highest frequency self-excited oscillation state, with a measured oscillation frequency of 2.10MHz.

[0035] By using the above illumination distribution scheme, a continuous and distinguishable self-excited oscillation output from the lowest frequency to the highest frequency can be obtained, realizing population activation spectrum coding based on spectral characteristics, and verifying the population sensing and output modulation capabilities of the present invention under different illumination spatial distribution conditions.

[0036] In summary, this invention utilizes the photosensitive characteristics of photosensitive units and the nonlinear modulation and history-dependent characteristics of memristors to achieve group perception and unified encoding of spatial illumination distribution. It can obtain distinguishable overall output characteristics without the need for complex multi-channel independent readout and external fusion circuits. Moreover, the circuit structure is compact, the device integration is high, and the output signal produces a significant response when the illumination distribution changes, thereby reducing power consumption and improving the dynamic illumination pattern recognition capability.

[0037] Based on the same inventive concept, a second aspect of the present invention also provides a light sensing system, which includes the light sensing and signal modulation circuit based on population activation spectrum provided in the first aspect of the present invention.

[0038] Specifically, the light sensing system provided in this embodiment can be a brain-like sensing system, an event-driven vision system, a light distribution pattern recognition system, or other intelligent light sensing platforms. Applying the above-mentioned light sensing and signal modulation circuit based on the population activation spectrum to such systems can effectively improve the system's information compression efficiency and response speed.

[0039] Although this application has been described herein in conjunction with various embodiments, those skilled in the art, by reviewing the accompanying drawings, disclosure, and appended claims, will understand and implement other variations of the disclosed embodiments in carrying out the claimed application. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality. A single processor or other unit can implement several functions listed in the claims. While different dependent claims may recite certain measures, this does not mean that these measures cannot be combined to produce good results.

[0040] The above description, in conjunction with specific preferred embodiments, provides a further detailed explanation of the present invention. It should not be construed that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of the present invention, and all such modifications and substitutions should be considered within the scope of protection of the present invention.

Claims

1. A photosensitive and signal modulation circuit based on population activation spectrum, characterized in that, include: Photosensitive unit group module (101) and memristor modulation module (102); wherein, The photosensitive unit group module (101) includes multiple photosensitive units spatially distributed; each photosensitive unit is used to sense the light intensity of different spatial light distributions and generate different photoelectric signals under the action of light. The memristor modulation module (102) includes at least one memristor, and the output terminals of the plurality of photosensitive units are electrically connected to the same modulation node of the memristor. The memristor performs group coupling modulation and unified encoding on the photogenerated electrical signals from the plurality of photosensitive units based on nonlinear conductivity characteristics and history dependence characteristics, so that the photogenerated electrical signals corresponding to different spatial illumination distributions exhibit different electrical response modes at the output terminal, and finally outputs the overall electrical activation feature spectrum related to the spatial illumination distribution through a single channel or a few channels.

2. The optical sensing and signal modulation circuit based on population activation spectrum according to claim 1, characterized in that, Multiple photosensitive units are spatially distributed in a one-dimensional, two-dimensional, or irregular array.

3. The optical sensing and signal modulation circuit based on population activation spectrum according to claim 1, characterized in that, Among the plurality of photosensitive units, at least two photosensitive units employ a structural parameter differentiation design; this differentiation design is manifested in at least one aspect of response gain, threshold, and connection weight.

4. The optical sensing and signal modulation circuit based on population activation spectrum according to claim 1, characterized in that, The photosensitive unit is any one of a phototransistor, a photodiode, or a photoresistor, or any combination thereof.

5. The optical sensing and signal modulation circuit based on population activation spectrum according to claim 4, characterized in that, The photosensitive unit group module (101) includes multiple photosensitive transistors, which are arranged in an M×N array; wherein, All phototransistors have their gates connected to the same gate voltage V. g All phototransistors have their drains connected to the same drain voltage V. d The sources of all phototransistors are connected to the modulation node of the memristor modulation module as the output terminals of the photosensitive unit.

6. The optical sensing and signal modulation circuit based on population activation spectrum according to claim 5, characterized in that, For the multiple phototransistors distributed in the array, phototransistors belonging to different columns have different channel lengths in the column direction; and phototransistors belonging to different rows have different threshold voltages in the row direction.

7. The optical sensing and signal modulation circuit based on population activation spectrum according to claim 1, characterized in that, The memristor modulation module (102) includes a memristor and a load resistor; wherein, The first end of the memristor serves as a modulation node, connecting to the output ends of multiple photosensitive units. The second terminal of the memristor is grounded through the load resistor and also serves as the output terminal of the memristor modulation module (102).

8. The optical sensing and signal modulation circuit based on population activation spectrum according to claim 7, characterized in that, The memristor is a memristor based on oxide, electrochemical migration, phase transition, or ferroelectric mechanisms.

9. The optical sensing and signal modulation circuit based on population activation spectrum according to claim 1, characterized in that, The electrical response mode includes at least one or more of the evolutionary features of voltage changing with time and current changing with time, thereby constituting a holistic electrical activation feature spectrum for characterizing spatial illumination distribution.

10. A light sensing system, characterized in that, The optical sensing system includes the optical sensing and signal modulation circuit based on the population activation spectrum as described in any one of claims 1-9.

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