Filter and electronic device

Abstract

The application discloses a filter and electronic equipment, and relates to the technical field of communication radio frequency, and the filter comprises a conductor structure, a first dielectric layer and a second dielectric layer. The conductor structure comprises a first metal layer, a second metal layer and a third metal layer arranged at intervals along a z direction and two arrays of metallized through holes arranged along a y direction, the metallized through holes penetrate through the first metal layer and the third metal layer, one array is electrically connected with the second metal layer, and the other array is electrically isolated from the second metal layer. The first metal layer is provided with a first channel for supporting a first high-order mode, the second metal layer is provided with a second channel for supporting a main mode, and the two channels are located between the two arrays of metallized through holes. The first dielectric layer is arranged between the first metal layer and the second metal layer, and the second dielectric layer is arranged between the second metal layer and the third metal layer. The application can solve the problems of single channel and poor isolation of the existing filter.

Description

Technical Field

[0001] This invention relates to the field of communication radio frequency technology, and in particular to a filter and an electronic device. Background Technology

[0002] With the continuous development of technology, electronic devices require higher integration and smaller size. The importance of high-density integration lies in improving the performance and functional density of electronic devices, reducing device size and weight, lowering power consumption, improving reliability, and extending device lifespan.

[0003] Due to their low loss and high power handling capabilities, rectangular waveguides have long been the primary structure for propagating electromagnetic waves. However, as discrete structures, they are difficult to interconnect with planar circuits and are unsuitable for today's high-density integrated circuit interconnects. Common interconnect structures such as microstrip lines achieve signal interconnection based on quasi-TEM modes, but their open physical structure exhibits high loss at high frequencies, and the loss increases dramatically with frequency, severely limiting signal transmission distance and speed. With societal development, the demand for high data transmission rates is increasing.

[0004] In recent years, the concept of substrate integrated waveguides (SIWBs) has been proposed. Besides possessing the advantages of traditional rectangular waveguides, SIWBs also offer advantages such as small size and low cost, thus showing broad application prospects in integrated circuits. Furthermore, the propagation characteristics of SIWBs have been extensively studied, and many high-performance planar devices have been developed based on their structure. For example, to address the issue of the large size of SIWBs, the concept of folded SIWBs has been proposed. Compared to SIWBs, folded SIWBs reduce the lateral dimension by 50% while maintaining almost no loss.

[0005] Surface plasmon polaritons (SPPs) are propagating surface waves generated between materials with positive and negative dielectric constants. In the visible light frequency range (300 THz–800 THz), metals have a negative dielectric constant, thus enabling the generation of SPPs, which decay exponentially along the direction perpendicular to the interface. SPPs are essentially light waves confined to a metal surface, exhibiting highly concentrated electromagnetic field distribution and slow wave speed. However, in the microwave frequency band, metals behave as electrical conductors, making it impossible to excite SPP modes. To achieve similar propagation characteristics to SPPs in the microwave frequency band, artificial surface plasmon polaritons (spoof SPPs, SSPPs) have been proposed based on the equivalent medium theory. SSPPs possess similar characteristics to SPPs, such as concentrated electric field and slow wave speed, and can be used in applications such as the miniaturization of microwave devices.

[0006] In recent years, many novel transmission line and filter structures have been proposed based on folded substrate integrated waveguides (FIPs) or SSPPs, such as an SSPP filter structure based on folded substrate integrated waveguides. This structure etches a periodic SSPP array into the intermediate metal layer of a traditional folded substrate integrated waveguide transmission line, combining the low-pass characteristics of SSPPs with the high-pass characteristics of folded substrate integrated waveguides. Through appropriate dimensional design, an SSPP filter structure based on folded substrate integrated waveguides is proposed. However, such existing filters typically support only a single transmission channel, making it difficult to meet the requirements of multi-band or multi-mode multiplexing. Furthermore, when attempting to introduce multiple modes, the signal isolation between channels is generally low due to structural symmetry or overlapping field distributions, limiting its application in high-density integrated systems. Summary of the Invention

[0007] The main objective of this invention is to propose a filter and electronic device that aims to solve the problems of existing filters having only one channel and poor isolation.

[0008] To achieve the above objectives, the filter proposed in this invention includes:

[0009] A conductor structure includes a first metal layer, a second metal layer, and a third metal layer spaced apart along the z-direction, and two columns of metallized via arrays arranged along the y-direction. The metallized vias in each column of the metallized via array penetrate the first metal layer and the third metal layer. One column of the metallized via array is electrically connected to the second metal layer, while the other column is electrically isolated from the second metal layer. The first metal layer has a first channel, and the second metal layer has a second channel. Both the first channel and the second channel are located between the two columns of metallized via arrays. The first channel is configured to support the transmission of a first higher-order mode signal within a target operating frequency band, and the second channel is configured to support the transmission of a primary mode signal within the target operating frequency band.

[0010] A first dielectric layer is disposed between the first metal layer and the second metal layer;

[0011] The second dielectric layer is disposed between the second metal layer and the third metal layer.

[0012] In one embodiment, the thickness of the first dielectric layer is different from the thickness of the second dielectric layer;

[0013] The thickness of the first dielectric layer or the second dielectric layer is configured to adjust the lower cutoff frequency of the first higher-order mode signal and the lower cutoff frequency of the main mode signal.

[0014] In one embodiment, the thickness of the first dielectric layer is greater than the thickness of the second dielectric layer.

[0015] In one embodiment, the first channel includes a plurality of first grooves spaced apart along the y-direction;

[0016] The second channel includes a plurality of second grooves spaced apart along the y-direction.

[0017] In one embodiment, a plurality of the first grooves are equidistantly arranged; and / or

[0018] Multiple second grooves are equidistantly arranged.

[0019] In one embodiment, the length of the first groove is configured to adjust the upper cutoff frequency of the first higher-order mode signal; and / or

[0020] The length of the second groove is configured to adjust the upper cutoff frequency of the master mode signal.

[0021] In one embodiment, the width of the second metal layer along the x-direction is smaller than the width of the first metal layer along the x-direction and smaller than the width of the third metal layer along the x-direction.

[0022] In one embodiment, the two arrays of metallized vias include a first array of metallized vias electrically connected to the second metal layer, and a second array of metallized vias electrically isolated from the second metal layer;

[0023] The distance between the end of the second metal layer near the second metallized via array in the x direction and the center of any metallized via in the first metallized via array is defined as the first distance. The first distance is configured to adjust the lower cutoff frequency of the master mode signal and control the signal isolation between the first channel and the second channel.

[0024] In one embodiment, the distance between the centers of two corresponding metallized vias in the two columns of metallized via arrays is defined as a second distance in the x-direction. The second distance is configured to adjust the lower cutoff frequency of the first higher-order mode signal and the lower cutoff frequency of the main mode signal.

[0025] The present invention also proposes an electronic device comprising the filter described above.

[0026] The technical solution of this invention constructs a conductor structure comprising a first metal layer, a second metal layer, and a third metal layer spaced apart along the z-direction, a first dielectric layer disposed between the first and second metal layers, and a second dielectric layer disposed between the second and third metal layers. The first and third metal layers are electrically connected using two columns of metallized vias arranged along the y-direction, with one column of vias electrically connected to the second metal layer and the other column electrically isolated from it, thereby creating an asymmetrical electromagnetic environment on both sides of the second metal layer. Based on this, a first channel located between the two columns of metallized vias operates in the target frequency band. It supports the transmission of the first higher-order mode signal and supports the transmission of the main mode signal in the target operating frequency band through the second channel. This concentrates the electric field of the main mode signal in the region near the second metal layer, while the electric field energy of the first higher-order mode signal is concentrated in the middle region of the entire filter. This enables the main mode and the first higher-order mode to achieve spatial separation and electromagnetic decoupling in the z direction. It not only retains the advantages of low loss, high power processing capability and miniaturization of folded substrate integrated waveguides, but also solves the problems of existing filters based on folded substrate integrated waveguides or SSPPs that only support a single transmission channel and have low isolation between multiple modes, thus meeting the requirements of multi-band or multi-mode multiplexing. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0028] Figure 1 This is a schematic diagram of the structure of an embodiment of the filter provided by the present invention;

[0029] Figure 2 for Figure 1 A top view of one embodiment;

[0030] Figure 3 for Figure 1 A partial top view of one embodiment;

[0031] Figure 4 The attenuation constant curves of the main mode and the first higher-order mode of the filter provided by the present invention under given parameters;

[0032] Figure 5 The dispersion curve of the filter provided by this invention under given parameters;

[0033] Figures 6 to 8 The S-parameter characteristic curve of the filter provided by the present invention under given parameters, wherein Figure 6 The S11 and S21 parameters corresponding to the main mode characterize the reflection and transmission performance of the first passband. Figure 7 The S11 and S21 parameters corresponding to the first higher-order mode characterize the reflection and transmission performance of the second passband. Figure 8 This is a graph showing near-end crosstalk and far-end crosstalk.

[0034] Figure 9 and Figure 10 The diagram shows the cutoff frequency variations of the principal mode and the first higher-order mode in the filter provided by this invention under different ly2 values.

[0035] Figure 11 and Figure 12 The diagram shows the cutoff frequency variation of the principal mode and the first higher-order mode in the filter provided by this invention under different ly1 values;

[0036] Figure 13 and Figure 14 The diagram shows the cutoff frequency variations of the principal mode and the first higher-order mode in the filter provided by this invention under different w1 values.

[0037] Explanation of icon numbers:

[0038] 100. Filter; 10. Conductor structure; 11. First metal layer; 1101. First channel; 11011. First groove; 12. Second metal layer; 1201. Second channel; 12011. Second groove; 13. Third metal layer; 14. Metallized via array; 141. First metallized via array; 142. Second metallized via array; 1401. Metallized via; 14011. First metallized via; 14012. Second metallized via; 20. First dielectric layer; 30. Second dielectric layer;

[0039] h1, thickness of the first dielectric layer; h2, thickness of the second dielectric layer;

[0040] lx1, the width of the first groove; lx2, the width of the second groove;

[0041] ly1, the length of the first groove; ly2, the length of the second groove;

[0042] w1, first distance; w2, second distance.

[0043] The realization of the objective, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0044] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0045] With the continuous development of technology, electronic devices require higher integration and smaller size. The importance of high-density integration lies in improving the performance and functional density of electronic devices, reducing device size and weight, lowering power consumption, improving reliability, and extending device lifespan.

[0046] Due to their low loss and high power handling capabilities, rectangular waveguides have long been the primary structure for propagating electromagnetic waves. However, as discrete structures, they are difficult to interconnect with planar circuits and are unsuitable for today's high-density integrated circuit interconnects. Common interconnect structures such as microstrip lines achieve signal interconnection based on quasi-TEM modes, but their open physical structure exhibits high loss at high frequencies, and the loss increases dramatically with frequency, severely limiting signal transmission distance and speed. With societal development, the demand for high data transmission rates is increasing.

[0047] In recent years, the concept of substrate integrated waveguides (SIWBs) has been proposed. Besides possessing the advantages of traditional rectangular waveguides, SIWBs also offer advantages such as small size and low cost, thus showing broad application prospects in integrated circuits. Furthermore, the propagation characteristics of SIWBs have been extensively studied, and many high-performance planar devices have been developed based on their structure. For example, to address the issue of the large size of SIWBs, the concept of folded SIWBs has been proposed. Compared to SIWBs, folded SIWBs reduce the lateral dimension by 50% while maintaining almost no loss.

[0048] Surface plasmon polaritons (SPPs) are propagating surface waves generated between materials with positive and negative dielectric constants. In the visible light frequency range (300 THz–800 THz), metals have a negative dielectric constant, thus enabling the generation of SPPs, which decay exponentially along the direction perpendicular to the interface. SPPs are essentially light waves confined to a metal surface, exhibiting highly concentrated electromagnetic field distribution and slow wave speed. However, in the microwave frequency band, metals behave as electrical conductors, making it impossible to excite SPP modes. To achieve similar propagation characteristics to SPPs in the microwave frequency band, artificial surface plasmon polaritons (spoof SPPs, SSPPs) have been proposed based on the equivalent medium theory. SSPPs possess similar characteristics to SPPs, such as concentrated electric field and slow wave speed, and can be used in applications such as the miniaturization of microwave devices.

[0049] In recent years, many novel transmission line and filter structures have been proposed based on folded substrate integrated waveguides (FIPs) or SSPPs, such as an SSPP filter structure based on folded substrate integrated waveguides. This structure etches a periodic SSPP array into the intermediate metal layer of a traditional folded substrate integrated waveguide transmission line, combining the low-pass characteristics of SSPPs with the high-pass characteristics of folded substrate integrated waveguides. Through appropriate dimensional design, an SSPP filter structure based on folded substrate integrated waveguides is proposed. However, such existing filters typically support only a single transmission channel, making it difficult to meet the requirements of multi-band or multi-mode multiplexing. Furthermore, when attempting to introduce multiple modes, the signal isolation between channels is generally low due to structural symmetry or overlapping field distributions, limiting its application in high-density integrated systems.

[0050] To address this issue, the present invention proposes a filter 100, which aims to solve the problems of existing filters having only one channel and poor isolation.

[0051] Please see Figures 1 to 3 In one embodiment of the present invention, the filter 100 includes:

[0052] The conductor structure 10 includes a first metal layer 11, a second metal layer 12, and a third metal layer 13 spaced apart along the z-direction, and two columns of metallized via arrays 14 arranged along the y-direction. Each column of metallized via arrays 14 has metallized vias 1401 that penetrate the first metal layer 11 and the third metal layer 13. One column of metallized via arrays 14 has metallized vias 1401 electrically connected to the second metal layer 12, while the other column has metallized vias 1401 electrically isolated from the second metal layer 12. The first metal layer 11 has a first channel 1101, and the second metal layer 12 has a second channel 1201. Both the first channel 1101 and the second channel 1201 are located between the two columns of metallized via arrays 14. The first channel 1101 is configured to support the transmission of a first higher-order mode signal within the target operating frequency band, and the second channel 1201 is configured to support the transmission of a primary mode signal within the target operating frequency band.

[0053] The first dielectric layer 20 is disposed between the first metal layer 11 and the second metal layer 12;

[0054] The second dielectric layer 30 is disposed between the second metal layer 12 and the third metal layer 13.

[0055] In this embodiment, the conductor structure 10 is used to construct the electromagnetic propagation path of the filter 100 and provide the electromagnetic shielding boundary required for mode isolation. The conductor structure 10 includes a first metal layer 11, a second metal layer 12, and a third metal layer 13, which are spaced apart along the z-direction. The shapes of the first metal layer 11, the second metal layer 12, and the third metal layer 13 can be rectangular, irregular, etc. In one embodiment, to facilitate structural alignment and consistent control of electromagnetic performance, the first metal layer 11, the second metal layer 12, and the third metal layer 13 are all rectangular.

[0056] To electrically connect the first metal layer 11, the second metal layer 12, and the third metal layer 13 as needed and form an electromagnetic shielding boundary, the conductor structure 10 has two columns of metallized via arrays 14, which are arranged along the y-direction. That is, multiple metallized vias 1401 in each column of the metallized via array 14 are spaced apart along the y-direction. The multiple metallized vias 1401 can be equidistant or unequally spaced. Furthermore, the shape of the metallized vias 1401 can be rectangular, circular, elliptical, etc. In one embodiment, to reduce high-frequency edge effects and improve processing consistency, each metallized via 1401 is circular, and multiple metallized vias 1401 in the same column of the metallized via array 14 are equidistant. Circular metallized vias 1401 prevent electric field concentration at sharp corners, while equidistantly arranged metallized vias 1401 help form a periodic electromagnetic environment, enhancing the stability of mode propagation.

[0057] Two rows of metallized via arrays 14 are arranged opposite each other along the x-direction, such as... Figure 1 As shown, the two columns of metallized via array 14 include a first metallized via array 141 and a second metallized via array 142. The first metallized via array 141 includes a plurality of first metallized vias 14011, and the second metallized via array 142 includes a plurality of second metallized vias 14012. The plurality of second metallized vias 14012 and the plurality of first metallized vias 14011 are arranged in a one-to-one correspondence along the x-direction to form a continuous and aligned electromagnetic shielding boundary in the x-direction, limiting the propagation of electromagnetic energy in the region between the two columns of metallized via array 14, reducing radiation loss and maintaining the stability of the electromagnetic field distribution in the region. Within this region, a first metal layer 11 has a first channel 1101, and a second metal layer 12 has a second channel 1201. Both the first channel 1101 and the second channel 1201 are located between two columns of metallized via arrays 14. The first channel 1101 is configured to support the transmission of a first higher-order mode signal within the target operating frequency band, and the second channel 1201 is configured to support the transmission of a main mode signal within the target operating frequency band. The first channel 1101 can provide a low-loss, highly constrained propagation path for the first higher-order mode signal, concentrating its electric field energy in the central region of the entire filter 100. The function of the second channel 1201 is to construct a stable transmission environment for the main mode signal, concentrating its electric field distribution in the region near the second metal layer 12. The filter 100 of the present invention can support the transmission of the main mode signal and the first higher-order mode signal respectively within the same target operating frequency band by the first channel 1101 and the second channel 1201.

[0058] Each metallized via 1401 in each column of the metallized via array 14 penetrates and electrically connects the first metal layer 11 and the third metal layer 13, thereby establishing a continuous conductive path between the first metal layer 11 and the third metal layer 13, thus forming a complete lateral electromagnetic shielding wall. This lateral electromagnetic shielding wall is the aforementioned electromagnetic shielding boundary used to confine electromagnetic energy, confining the electromagnetic energy to the area between the two columns of the metallized via array 14. This can prevent the main mode signal and / or the first higher-order mode signal from leaking outward and ensure the low radiation loss characteristics of the first channel 1101 and the second channel 1201. One of the metallized via arrays 14 has metallized vias 1401 electrically connected to the second metal layer 12, while the other has metallized vias 1401 electrically isolated from the second metal layer 12. This results in the second metal layer 12 exhibiting different boundary conditions on both sides near the two metallized via arrays 14: on one side, the second metal layer 12 is directly connected to the metallized vias 1401, forming a continuous ground reference surface; on the other side, there is an electrical disconnect between the second metal layer 12 and the metallized vias 1401, forming a high impedance or open boundary. This creates an asymmetric electromagnetic environment on both sides of the second metal layer 12. This asymmetrical electromagnetic environment causes the electric field of the main mode signal to tend to concentrate in the region of the second metal layer 12 connected to the ground side, while the first higher-order mode signal is pushed away from the second metal layer 12 due to the boundary asymmetry and is more localized in the middle region of the entire filter 100. This enables the main mode and the first higher-order mode to achieve spatial separation and electromagnetic decoupling in the z direction, thereby improving the signal isolation between the first channel 1101 and the second channel 1201.

[0059] To support the multilayer structure composed of a first metal layer 11, a second metal layer 12, and a third metal layer 13, and to regulate the propagation characteristics of the first channel 1101 and the second channel 1201, a first dielectric layer 20 is disposed between the first metal layer 11 and the second metal layer 12, and a second dielectric layer 30 is disposed between the second metal layer 12 and the third metal layer 13. The function of the first dielectric layer 20 is to provide electrical isolation and mechanical support between the first metal layer 11 and the second metal layer 12, and at the same time, to influence the phase constant and cutoff frequency of the first higher-order mode signal in the first channel 1101 through its dielectric properties. The first channel 1101 is located on the first metal layer 11, and its surrounding electromagnetic environment is defined by the first dielectric layer 20 and the second dielectric layer 30. By changing the dielectric constant or thickness of the first dielectric layer 20 or the second dielectric layer 30, the effective wavelength and cutoff frequency of the first higher-order mode signal in the first channel 1101 can be adjusted. The function of the second dielectric layer 30 is to provide electrical isolation and structural support between the second metal layer 12 and the third metal layer 13. Its dielectric parameters regulate the propagation constant and resonance characteristics of the master mode signal in the second channel 1201. The second channel 1201 is located on the second metal layer 12, immediately below and adjacent to the second dielectric layer 30. The dielectric parameters of the second dielectric layer 30 directly affect the electric field distribution and resonance behavior of the master mode signal. A well-designed second dielectric layer 30 helps optimize the transmission response of the master mode and meet the target filtering performance.

[0060] In one embodiment, the first dielectric layer 20 and the second dielectric layer 30 can be made of a high-frequency, low-loss dielectric material. The high-frequency, low-loss dielectric material can effectively suppress dielectric loss and maintain the stability of the dielectric constant, which is beneficial to maintaining the high selectivity and low insertion loss of the filter 100.

[0061] Furthermore, the shapes of the first dielectric layer 20 and the second dielectric layer 30 can be rectangular, irregular, or other shapes. In one embodiment, to facilitate interlayer alignment and integrated manufacturing of the overall structure, the shapes of the first dielectric layer 20 and the second dielectric layer 30 are consistent with the shapes of the first metal layer 11, the second metal layer 12, and the third metal layer 13, all of which are rectangular.

[0062] The technical solution of the present invention constructs a conductor structure 10 comprising a first metal layer 11, a second metal layer 12, and a third metal layer 13 spaced apart along the z-direction, a first dielectric layer 20 disposed between the first metal layer 11 and the second metal layer 12, and a second dielectric layer 30 disposed between the second metal layer 12 and the third metal layer 13. The first metal layer 11 and the third metal layer 13 are electrically connected using two columns of metallized via arrays 14 arranged along the y-direction, wherein one column of the metallized via array 14 is electrically connected to the second metal layer 12, while the other column is electrically isolated from the second metal layer 12, thereby creating an asymmetrical electromagnetic environment on both sides of the second metal layer 12. Furthermore, the electromagnetic environment is further enhanced by the presence of vias located between the two columns of metallized via arrays 14. The first channel 1101 supports the transmission of the first higher-order mode signal within the target operating frequency band, and the second channel 1201 supports the transmission of the main mode signal within the target operating frequency band. This concentrates the electric field of the main mode signal in the region near the second metal layer 12, while the electric field energy of the first higher-order mode signal is concentrated in the middle region of the entire filter 100. This enables the main mode and the first higher-order mode to achieve spatial separation and electromagnetic decoupling in the z-direction. It not only retains the advantages of low loss, high power processing capability, and miniaturization of substrate integrated waveguides, but also solves the problem that existing filters based on folded substrate integrated waveguides or SSPPs only support a single transmission channel and have low isolation between multiple modes, thus meeting the requirements of multi-band or multi-mode multiplexing.

[0063] Given that the upper and lower cutoff frequencies of existing technologies are often determined by the overall structure, there is a lack of independent control over the filtering characteristics of different modes. Although a mode composite transmission line based on a folded substrate integrated waveguide has been proposed in recent years, which allows the primary mode and the first higher-order mode to transmit simultaneously in the same frequency band by adjusting the width of the intermediate metal layer of the folded substrate integrated waveguide, and with port isolation greater than 38dB, this structure is only used for signal transmission, does not have filtering function, and cannot independently adjust the channel characteristics of the two modes.

[0064] like Figures 1 to 3 As shown, in one embodiment, the thickness h1 of the first dielectric layer 20 is different from the thickness h2 of the second dielectric layer 30; the thickness h1 of the first dielectric layer 20 or the thickness h2 of the second dielectric layer 30 is configured to adjust the lower cutoff frequency of the first higher-order mode signal and the lower cutoff frequency of the main mode signal.

[0065] In this embodiment, since the first channel 1101 is located in the first metal layer 11 and is used to transmit the first higher-order mode signal, and the second channel 1201 is located in the second metal layer 12 and is used to transmit the main mode signal, the lower cutoff frequency of the first higher-order mode signal mainly depends on the total thickness of the conductor structure 10 in the z-direction, the second distance w2, and the average dielectric constant of the first dielectric layer 20 and the second dielectric layer 30. The lower cutoff frequency of the main mode signal is affected not only by the above parameters but also by the first distance w1. The descriptions of the first distance w1 and the second distance w2 are detailed in the following embodiments.

[0066] When only the thickness h1 of the first dielectric layer 20 or the thickness h2 of the second dielectric layer 30 is changed while keeping their sum constant, the lower cutoff frequency of the first higher-order mode signal remains basically unchanged (because it mainly depends on the total thickness), but the lower cutoff frequency of the main mode signal will change, thereby achieving a relative shift in the cutoff frequency between the two modes. By setting the first dielectric layer 20 and the second dielectric layer 30 to have different thicknesses, the electromagnetic symmetry of the conductor structure 10 in the z-direction can be broken without significantly changing the total thickness, so that the electric field energy of the two modes presents a differentiated distribution in the vertical direction, enhancing the locality of their respective fields, reducing mutual coupling, and thus improving the signal isolation between the first channel 1101 and the second channel 1201.

[0067] like Figures 1 to 3 As shown, in one embodiment, the thickness h1 of the first dielectric layer 20 is greater than the thickness h2 of the second dielectric layer 30.

[0068] In this embodiment, since the lower cutoff frequency of the first higher-order mode signal is mainly determined by the total thickness, the second distance w2, and the average dielectric constant, while the lower cutoff frequency of the main mode signal also depends on the first distance w1, increasing the thickness h1 of the first dielectric layer 20 and correspondingly decreasing the thickness h2 of the second dielectric layer 30 while keeping the total thickness constant will cause the lower cutoff frequency of the main mode signal to shift, while the lower cutoff frequency of the first higher-order mode signal remains basically stable. The asymmetric dielectric configuration enables the starting frequencies of the two passbands to form an effective separation in the frequency domain, avoiding overlap at the low-frequency end; at the same time, this thickness difference causes the main mode electric field to be more concentrated in the region near the second metal layer 12, and the first higher-order mode electric field to be more concentrated in the middle region of the entire filter 100, further offsetting the main energy distribution regions of the two in the z direction, thereby reducing the degree of field overlap between modes and improving the isolation performance of the first channel 1101 and the second channel 1201.

[0069] like Figures 1 to 3 As shown, in one embodiment, the first channel 1101 includes a plurality of first grooves 11011 spaced apart along the y-direction; the second channel 1201 includes a plurality of second grooves 12011 spaced apart along the y-direction.

[0070] In this embodiment, since the electric field of the master mode signal is mainly distributed in the region of the second metal layer 12, the array of second grooves 12011 disposed on the second metal layer 12 introduces low-pass characteristics to the master mode signal by periodically perturbing the electromagnetic boundary conditions of the region, and the cutoff frequency is determined by the geometric parameters of the second grooves 12011; while the conductor structure 10 composed of the first metal layer 11, the second metal layer 12, the third metal layer 13 and the two columns of metallized via array 14 itself exhibits high-pass characteristics to the master mode signal. The combination of the two makes the second channel 1201 form a bandpass filter response.

[0071] Similarly, the electric field of the first higher-order mode signal is mainly distributed in the middle region of the entire filter 100. The array of first grooves 11011 disposed on the first metal layer 11 also introduces low-pass characteristics for the first higher-order mode signal by periodically modulating the electromagnetic boundary conditions of this region. The cutoff frequency is controlled by the geometric parameters of the first grooves 11011. This low-pass characteristic, in conjunction with the high-pass characteristic of the conductor structure 10 for the first higher-order mode signal, enables the first channel 1101 to also form an independent bandpass filter response.

[0072] Thus, the first groove array 11011 and the second groove array 12011 provide their respective upper cutoff frequencies for the main mode signal and the first higher-order mode signal, respectively. Combined with the inherent lower cutoff frequencies of the main mode and the first higher-order mode, the first channel 1101 and the second channel 1201 coexist in the target operating frequency band within the same filter 100, and each has complete bandpass characteristics.

[0073] like Figures 1 to 3 As shown, in one embodiment, a plurality of first grooves 11011 are equidistantly arranged.

[0074] In this embodiment, since the first grooves 11011 are equidistantly arranged along the y-direction, a periodic electromagnetic disturbance structure can be formed on the first metal layer 11. The electromagnetic disturbance structure generates a slow wave effect and cutoff characteristics for the first higher-order mode signal, thereby introducing a low-pass filter response.

[0075] The equidistant arrangement helps to build a uniform dispersion relationship, making the propagation characteristics of the first higher-order mode signal in the first channel 1101 more stable, and is conducive to forming a steep upper cutoff frequency edge; at the same time, the consistent arrangement of the first grooves 11011 can reduce mode scattering and reflection, reduce insertion loss, and improve the consistency of the filtering performance of the first channel 1101.

[0076] like Figures 1 to 3 As shown, in one embodiment, a plurality of second grooves 12011 are equidistantly arranged.

[0077] In this embodiment, since the second grooves 12011 are equidistantly arranged along the y-direction, a periodic electromagnetic disturbance structure can be formed on the second metal layer 12. The electromagnetic disturbance structure generates a slow wave effect and frequency selectivity for the main mode signal, thereby introducing a low-pass filter response.

[0078] Equal spacing helps to establish stable periodic boundary conditions, making the propagation characteristics of the master mode signal more uniform in the second channel 1201, and is conducive to forming a clear and controllable upper cutoff frequency. At the same time, consistent groove spacing can reduce reflection and loss caused by non-periodic scattering, and improve the transmission efficiency and filter response repeatability of the second channel 1201.

[0079] like Figures 1 to 3 As shown, in one embodiment, the length ly1 of the first groove 11011 is configured to adjust the upper cutoff frequency of the first higher-order mode signal.

[0080] In this embodiment, since the first groove 11011 is disposed on the first metal layer 11 and periodically arranged along the y direction, its length ly1 affects the disturbance intensity of the electromagnetic field near the first metal layer 11. When the first higher-order mode signal propagates in the first channel 1101, the electric field energy is mainly concentrated in the middle region of the entire filter 100. The larger the length ly1 of the first groove 11011, the stronger the binding effect on the electric field of the first higher-order mode, and the more significant the equivalent slow wave effect, thereby reducing the upper cutoff frequency of the first higher-order mode.

[0081] Therefore, by adjusting the length ly1 of the first groove 11011, the upper cutoff frequency of the first channel 1101 can be adjusted independently while keeping the conductor structure 10 and other parameters unchanged. This allows the upper cutoff frequency of the first channel 1101 to be determined together with the lower cutoff frequency of the first higher-order mode determined by the conductor structure 10, thereby achieving independent adjustment and optimization of the filtering characteristics of the first channel 1101.

[0082] like Figures 1 to 3 As shown, in one embodiment, the length ly2 of the second groove 12011 is configured to adjust the upper cutoff frequency of the master mode signal.

[0083] In this embodiment, since the second groove 12011 is disposed on the second metal layer 12 and periodically arranged along the y-direction, its length ly2 affects the modulation length of the electromagnetic boundary conditions near the second metal layer 12. When the master mode signal propagates in the second channel 1201, its electric field energy is mainly distributed in the interface region between the second metal layer 12 and the second dielectric layer 30. The larger the length ly2 of the second groove 12011, the stronger the disturbance to the master mode electric field, and the more obvious the equivalent slow wave effect, thereby causing the upper cutoff frequency of the master mode to shift to the lower frequency direction.

[0084] Therefore, by adjusting the length ly2 of the second groove 12011, the upper cutoff frequency of the second channel 1201 can be controlled independently while keeping the conductor structure 10 and other parameters unchanged. This allows the upper cutoff frequency of the second channel 1201 to be defined together with the lower cutoff frequency of the main mode determined by the conductor structure 10, thereby achieving independent adjustment and optimization of the filtering characteristics of the second channel 1201.

[0085] like Figures 1 to 3 As shown, in one embodiment, the width of the second metal layer 12 along the x-direction is smaller than the width of the first metal layer 11 along the x-direction, and smaller than the width of the third metal layer 13 along the x-direction.

[0086] In this embodiment, since the lower cutoff frequency of the dominant mode signal is related to the equivalent waveguide width of the conductor structure 10 in the x-direction, and the equivalent waveguide width is mainly determined by the width of the second metal layer 12 along the x-direction, reducing the width of the second metal layer 12 can increase the lower cutoff frequency of the dominant mode signal. Simultaneously, maintaining a relatively wide dimension along the x-direction for the first metal layer 11 and the third metal layer 13 helps maintain the integrity of the electromagnetic shielding boundary formed by the two columns of metallized via arrays 14, and provides sufficient lateral constraint space for the first higher-order mode signal, ensuring that its lower cutoff frequency is not affected by the narrowing of the second metal layer 12.

[0087] Therefore, by making the width of the second metal layer 12 along the x-direction smaller than the widths of the first metal layer 11 and the third metal layer 13 along the x-direction, the lower cutoff frequency of the main mode signal can be increased independently without changing the propagation environment of the first higher-order mode, thereby adjusting the frequency domain spacing between the first channel 1101 and the second channel 1201, providing a structural basis for realizing the independent bandpass response of the dual channels.

[0088] like Figures 1 to 3 As shown, in one embodiment, the two arrays of metallized vias 14 include a first array of metallized vias 141 electrically connected to the second metal layer 12, and a second array of metallized vias 142 electrically isolated from the second metal layer 12; the distance between the end of the second metal layer 12 near the second metallized via array 142 in the x direction and the center of any metallized via 1401 in the first metallized via array 141 is defined as a first distance w1, the first distance w1 is configured to adjust the lower cutoff frequency of the second channel 1201 for the master mode signal, and control the signal isolation between the first channel 1101 and the second channel 1201.

[0089] In this embodiment, since the electric field of the master mode signal is mainly distributed in the region of the second metal layer 12, its lower cutoff frequency is related to the effective lateral dimension of this region in the x-direction. The first distance w1 determines the unshielded extension length of the second metal layer 12 on the side closer to the second metallized via array 142, thereby affecting the equivalent waveguide width of the master mode signal. When the first distance w1 increases, the effective lateral constraint of the master mode weakens, resulting in a decrease in its lower cutoff frequency, and vice versa. At the same time, the adjustment of the first distance w1 changes the asymmetry of the field distribution of the second metal layer 12 under the asymmetric electromagnetic boundary, making the master mode electric field more concentrated on the side connected to the first metallized via array 141, and further away from the region of the first metal layer 11 where the first channel 1101 is located. This reduces the field overlap between the first higher-order mode and the master mode, and improves the signal isolation between the first channel 1101 and the second channel 1201. Therefore, by reasonably setting the first distance w1, the signal isolation between the first channel 1101 and the second channel 1201 can be optimized while adjusting the lower cutoff frequency of the second channel 1201. It is worth noting that the first distance w1 mainly affects the lower cutoff frequency of the main mode signal, and has little or negligible effect on the lower cutoff frequency of the first higher-order mode signal.

[0090] like Figures 1 to 3 As shown, in one embodiment, the distance between the centers of two corresponding metallized vias 1401 in the two columns of metallized via array 14 in the y direction is defined as the second distance w2. The second distance w2 is configured to adjust the lower cutoff frequency of the first higher-order mode signal and the lower cutoff frequency of the main mode signal.

[0091] In this embodiment, when the primary mode signal and the first higher-order mode signal propagate in the conductor structure 10, their electromagnetic fields are confined to the region between the two columns of metallized via arrays 14. The effective lateral dimension of this region in the y-direction is determined by the second distance w2. When the second distance w2 increases, the equivalent waveguide lateral dimension increases, and the lower cutoff frequencies of both the primary mode signal and the first higher-order mode signal decrease accordingly. Conversely, when the second distance w2 decreases, the lower cutoff frequencies of both signals increase. Therefore, adjusting the second distance w2 can simultaneously control the lower cutoff frequencies of the primary mode and the first higher-order mode, thereby affecting the start frequencies of the passbands of the first channel 1101 and the second channel 1201.

[0092] If the lower cutoff frequency of the first higher-order mode signal needs to be adjusted independently, the lower cutoff frequency of the first higher-order mode signal can first be adjusted by adjusting the second distance w2 to bring it closer to the sub-target frequency. At this time, the lower cutoff frequency of the main mode signal will also shift. Then, the first distance w1 is adjusted, which is the distance between the end of the second metal layer 12 in the x-direction close to the end of the metallized via array electrically isolated from the second metal layer 12 and the center of any metallized via 1401 in the metallized via array, to compensate for the lower cutoff frequency of the main mode signal and restore it to the required main target frequency. Similarly, the operation can be reversed: first, the lower cutoff frequency of the first higher-order mode signal is set, and then the lower cutoff frequency of the main mode signal is independently configured by coordinating the adjustment of the second distance w2 and the first distance w1.

[0093] In addition to the second distance w2, adjusting the thickness h1 of the first dielectric layer 20 or the thickness h2 of the second dielectric layer 30 will also simultaneously affect the lower cutoff frequencies of the main mode signal and the first higher-order mode signal. This is because the cutoff characteristics of both the main mode and the first higher-order mode are related to the overall geometric parameters and dielectric distribution of the conductor structure 10. In particular, for the first higher-order mode, its lower cutoff frequency is closely related to the total thickness of the conductor structure 10.

[0094] In summary, the second distance w2, the first distance w1, the thickness h1 of the first dielectric layer 20, and the thickness h2 of the second dielectric layer 30 together constitute the design freedom for flexibly adjusting the cutoff frequency of the dual-channel circuit.

[0095] like Figures 1 to 3As shown, in one embodiment, the conductor structure 10 includes a first metal layer 11, a second metal layer 12, a third metal layer 13, and two columns of metallized via arrays 14 located between the first metal layer 11 and the third metal layer 13. These two columns of metallized via arrays 14 extend along the y-direction and are arranged opposite each other in the x-direction. The thicknesses of the first metal layer 11, the second metal layer 12, and the third metal layer 13 are all t, the thickness of the first dielectric layer 20 is h1, the thickness of the second dielectric layer 30 is h2, and the length of the filter 100 is L, meaning that the extension lengths of the first metal layer 11 and the third metal layer 13 in the y-direction are both L. Each column of metallized via array 14 consists of multiple metallized vias 1401, each with a diameter of d. Adjacent metallized vias 1401 are arranged at equal intervals along the y-direction, with a spacing of s. The distance between the centers of two corresponding metallized vias 1401 in two columns of metallized via array 14 in the y-direction is defined as the second distance w2. One column of metallized via array 14 is electrically connected to the second metal layer 12, while the other column is electrically isolated from it. The distance between the end of the second metal layer 12 near the electrically isolated side of the metallized via array 14 in the x-direction and the center of any metallized via 1401 in that column is defined as the first distance w1. Multiple first grooves 11011 are etched on the first metal layer 11 at intervals along the y-direction, forming a first groove 11011 array. Multiple second grooves 12011 are etched on the second metal layer 12 at intervals along the y-direction, forming a second groove 12011 array. Each first groove 11011 has a width of lx1 and a length of ly1, with a spacing of g1 between adjacent first grooves 11011; each second groove 12011 has a width of lx2 and a length of ly2, with a spacing of g2 between adjacent second grooves 12011. A first channel 1101 is disposed on the first metal layer 11 and is used to transmit first higher-order mode signals; a second channel 1201 is disposed on the second metal layer 12 and is used to transmit main-mode signals. The conductor structure 10 exhibits high-pass characteristics for both the main mode and the first higher-order mode, with its lower cutoff frequency determined by the equivalent waveguide dimensions of the conductor structure 10. The arrays of first grooves 11011 and second grooves 12011 introduce low-pass characteristics, with their upper cutoff frequencies controlled by the geometric parameters of their respective grooves. The combination of these two features forms two independent bandpass responses.

[0096] The electric field of the master mode signal is mainly distributed in the interface region between the second metal layer 12 and the second dielectric layer 30. Its lower cutoff frequency is affected by factors such as the second distance w2, the first distance w1, and the thickness h2 of the second dielectric layer 30: when w2 increases, the equivalent waveguide lateral width increases, and the lower cutoff frequency decreases; changes in w1 also significantly alter the lower cutoff frequency of the master mode. The electric field of the first higher-order mode signal is mainly distributed in the middle region of the entire filter 100, and its lower cutoff frequency is mainly determined by the first distance w1, the thickness h1 of the first dielectric layer 20, and the thickness h2 of the second dielectric layer 30. Experimental results show that adjusting w1 mainly affects the lower cutoff frequency of the master mode, while having minimal impact on the lower cutoff frequency of the first higher-order mode; adjusting ly1 only changes the upper cutoff frequency of the first higher-order mode, and adjusting ly2 only changes the upper cutoff frequency of the master mode, thus achieving independent control of the four cutoff frequencies.

[0097] In one embodiment, w2 is 7 mm, w1 is 6 mm, h1 is 1.524 mm, h2 is 0.127 mm, the diameter d of the metallized via 1401 is 0.2 mm, the spacing s is 0.4 mm, and the length L of the filter 100 is 12 mm; the parameters of the first groove 11011 are lx1=0.4 mm, ly1=3 mm, and g1=0.8 mm, and the parameters of the second groove 12011 are lx2=0.4 mm, ly2=3 mm, and g2=0.8 mm.

[0098] Under this configuration, such as Figure 4 As shown, the attenuation constant curves of the main mode and the first higher-order mode of the filter 100 indicate that, due to the high-pass characteristics of the conductor structure 10, the lower cutoff frequencies of the two passbands correspond to the cutoff frequencies of the main mode and the first higher-order mode, respectively, with measured values ​​of 7.3 GHz and 13.6 GHz.

[0099] like Figure 5 As shown, since the first groove 11011 array and the second groove 12011 array respectively constitute a quasi-SSPP structure and exhibit low-pass characteristics, the upper cutoff frequencies of the two passbands are determined by ly1 and ly2, respectively, with measured values ​​of 15.5 GHz and 36.5 GHz. (Synthetic) Figure 4 and Figure 5 It can be seen that the two passbands of the filter 100 are 7.3 to 15.5 GHz and 13.6 to 36.5 GHz, respectively.

[0100] like Figure 6 , Figure 7 and Figure 8 As shown, the S-parameter test results under these parameters further verify the filtering performance: Figure 6 The first passband curves S11 and S21 corresponding to the main mode show good passband matching and insertion loss. Figure 7The second passband curves S11 and S21 corresponding to the first higher-order mode also have excellent filtering response; Figure 8 The near-end crosstalk and far-end crosstalk curves show that the crosstalk level between the two channels is low, indicating good signal isolation capability.

[0101] In addition, such as Figure 9 and Figure 10 As shown, when only ly2 is changed, the upper cutoff frequency of the second passband shifts significantly, while other cutoff frequencies remain essentially unchanged, indicating that the upper cutoff frequency of the second passband can be independently adjusted by ly2; Figure 11 and Figure 12 As shown, adjusting only ly1 changes the upper cutoff frequency of the first passband, verifying the dependence of the upper cutoff frequency of the first passband on ly1; Figure 13 and Figure 14 As shown, when w1 is adjusted alone, only the lower cutoff frequency of the first passband shifts, further confirming that w1 is an independent parameter for controlling the low-frequency boundary of the first passband.

[0102] The lower cutoff frequency of the second passband corresponds to the cutoff frequency of the first higher-order mode in the filter 100. This frequency is mainly determined by geometric parameters such as the equivalent waveguide width in the y-direction and the thickness of the dielectric layer of the overall conductor structure 10 of the filter 100. If the lower cutoff frequency of the second passband needs to be adjusted independently, the cutoff frequency of the first higher-order mode can first be set to the target value by adjusting parameters affecting the overall waveguide size, such as the spacing w2 between the two columns of metallized via arrays, the thickness h1 of the first dielectric layer 20, or the thickness h2 of the second dielectric layer 30. Then, the lower cutoff frequency, the upper cutoff frequency, and the upper cutoff frequency of the second passband can be finely adjusted using the three parameters w1, ly1, and ly2, which have local control capabilities, respectively. This allows for the matching of the other three cutoff frequencies without significantly disturbing the lower cutoff frequency of the second passband. This step-by-step adjustment strategy relies on the decoupling design of the asymmetric electromagnetic boundary and the double-layer groove array constructed in this invention, enabling the four cutoff frequencies to have relatively independent control paths in terms of physical mechanism.

[0103] In summary, the filter 100 of the present invention, through the layout of three metal layers, two dielectric layers and two columns of metallized via arrays, achieves high integration while giving each passband cutoff frequency the ability to be flexibly and independently configured, making it suitable for high-speed interconnection and multi-band RF front-end systems at the circuit board level and chip level.

[0104] The present invention also proposes an electronic device, which includes a filter 100. The specific structure of the filter 100 is as described in the above embodiments. Since the electronic device adopts all the technical solutions of all the above embodiments, it has at least all the beneficial effects brought about by the technical solutions of the above embodiments, which will not be described in detail here.

[0105] The above description is merely an exemplary embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural transformations made using the contents of the present invention specification and drawings under the technical concept of the present invention, or direct / indirect applications in other related technical fields, are included within the patent protection scope of the present invention.

Claims

1. A filter, characterized by, include: A conductor structure includes a first metal layer, a second metal layer, and a third metal layer spaced apart along the z-direction, and two columns of metallized via arrays arranged along the y-direction. The metallized vias in each column of the metallized via array penetrate the first metal layer and the third metal layer. One column of the metallized via array is electrically connected to the second metal layer, while the other column is electrically isolated from the second metal layer. The first metal layer has a first channel, and the second metal layer has a second channel. Both the first channel and the second channel are located between the two columns of metallized via arrays. The first channel is configured to support the transmission of a first higher-order mode signal within a target operating frequency band, and the second channel is configured to support the transmission of a primary mode signal within the target operating frequency band. A first dielectric layer is disposed between the first metal layer and the second metal layer; The second dielectric layer is disposed between the second metal layer and the third metal layer.

2. The filter of claim 1, wherein, The thickness of the first dielectric layer is different from the thickness of the second dielectric layer; The thickness of the first dielectric layer or the second dielectric layer is configured to adjust the lower cutoff frequency of the first higher-order mode signal and the lower cutoff frequency of the main mode signal.

3. The filter of claim 2, wherein, The thickness of the first dielectric layer is greater than the thickness of the second dielectric layer.

4. The filter of claim 1, wherein, The first channel includes a plurality of first grooves spaced apart along the y-direction; The second channel includes a plurality of second grooves spaced apart along the y-direction.

5. The filter of claim 4, wherein, Multiple first grooves are equidistantly arranged; and / or Multiple second grooves are equidistantly arranged.

6. The filter of claim 4, wherein, The length of the first groove is configured to adjust the upper cutoff frequency of the first higher-order mode signal; and / or The length of the second groove is configured to adjust the upper cutoff frequency of the master mode signal.

7. The filter of any one of claims 1 to 6, wherein, The width of the second metal layer along the x-direction is smaller than the width of the first metal layer along the x-direction, and smaller than the width of the third metal layer along the x-direction.

8. The filter as described in claim 7, characterized in that, The two arrays of metallized vias include a first array of metallized vias electrically connected to the second metal layer, and a second array of metallized vias electrically isolated from the second metal layer. The distance between the end of the second metal layer near the second metallized via array in the x direction and the center of any metallized via in the first metallized via array is defined as the first distance. The first distance is configured to adjust the lower cutoff frequency of the master mode signal and control the signal isolation between the first channel and the second channel.

9. The filter as described in claim 8, characterized in that, The distance between the centers of two corresponding metallized vias in the two columns of the metallized via array is defined as a second distance in the x-direction. The second distance is configured to adjust the lower cutoff frequency of the first higher-order mode signal and the lower cutoff frequency of the main mode signal.

10. An electronic device, characterized in that, Includes the filter as described in any one of claims 1 to 9.

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