A backlight adjustment method and display system

Abstract

This application provides a backlight adjustment method and display system. The method includes: applying a voltage between the source and drain of a thin-film transistor (TFT); detecting the leakage current between the source and drain of the TFT, and determining the ambient light intensity of the entire display area based on the leakage current; processing the detected ambient light intensity to obtain a processing result; and adjusting the backlight brightness based on the processing result. This application utilizes the method of detecting leakage current by applying a voltage between the source and drain of the TFT, eliminating the need for additional hardware for ambient light intensity detection and saving costs. Furthermore, by adjusting the backlight brightness of the display screen based on the detected ambient light intensity, it eliminates the brightness reduction problem caused by black-out insertion and improves the display quality under different ambient light intensities.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a backlight adjustment method and display system. Background Technology

[0002] Because LCD monitors operate on a completely different principle than CRTs (Cathode Ray Tubes), they inherently suffer from "ghosting" issues when displaying dynamic images. Traditional solutions primarily improve ghosting by increasing the response time of the liquid crystal material, but this method only addresses the symptoms and cannot completely eliminate the visual persistence effect on the human eye. Black pixel insertion technology emerged to address this problem.

[0003] Black frame insertion technology reduces motion blur by inserting a black frame between two images to eliminate visual persistence. However, inserting a black frame significantly reduces the overall brightness of the display screen, and existing black frame insertion technologies have limited applicability to ambient light. Summary of the Invention

[0004] This application provides a backlight adjustment method and display system to solve the problems of brightness reduction and limited applicability to ambient light in existing black-insertion technology.

[0005] To solve the above-mentioned technical problems, the first technical solution adopted in this application is: to provide a backlight adjustment method, the method comprising:

[0006] A voltage is applied between the source and drain of the thin-film transistor;

[0007] The leakage current between the source and drain of the thin-film transistor is detected, and the ambient light intensity of the entire display area is determined based on the leakage current.

[0008] The detection results of ambient light intensity are processed to obtain the processed results;

[0009] Adjust the backlight brightness based on the processing results.

[0010] In one embodiment, the step of detecting the leakage current between the source and drain of a thin-film transistor specifically includes:

[0011] Backlight insertion for the entire display panel;

[0012] During black pixel insertion, the leakage current of each thin-film transistor is detected row by row to obtain the ambient light intensity of each sub-pixel.

[0013] In one embodiment, the step of detecting the leakage current corresponding to each thin-film transistor row by row during black pixel insertion to obtain the ambient light intensity corresponding to each sub-pixel specifically includes:

[0014] Adjust the pixel voltage of all pixels to be consistent with the charging voltage of their corresponding data lines, and record it as V1;

[0015] Increase the charging voltage of the data line to V2, and charge all sub-pixels row by row, so that the pixel voltage of the sub-pixels forms a voltage difference with the data line;

[0016] By detecting the leakage current of the thin-film transistors line by line, the ambient light intensity corresponding to each sub-pixel is obtained.

[0017] In one embodiment, the step of increasing the charging voltage of the data line to V2 and charging all sub-pixels row by row to create a voltage difference between the pixel voltage of the sub-pixels and the data line, and detecting the leakage current corresponding to the thin-film transistors row by row to obtain the ambient light intensity corresponding to each sub-pixel, specifically includes:

[0018] Increase the charging voltage of the data line to V2, charge the sub-pixels of the first row to V2, turn off the thin film transistors of the first row, restore the charging voltage of the data line to V1, obtain the first leakage current of the data line, and use the first leakage current as the leakage current corresponding to the thin film transistors of the first row.

[0019] Increase the charging voltage of the data line to V2, charge the second row of sub-pixels to V2, turn off the thin film transistors of the second row, restore the charging voltage of the data line to V1, obtain the second leakage current of the data line, and subtract the first leakage current from the second leakage current as the leakage current of the thin film transistors of the second row.

[0020] Increase the charging voltage of the data line to V2, charge the Nth row of sub-pixels to V2, turn off the thin-film transistors in the Nth row, restore the charging voltage of the data line to V1, obtain the Nth leakage current of the data line, and subtract the leakage current of the thin-film transistors in all previous rows from the Nth leakage current to obtain the leakage current of the thin-film transistors in the Nth row; where N is a positive integer greater than or equal to 3.

[0021] By analogy, the leakage current between the source and drain of each thin-film transistor in the entire display panel can be obtained.

[0022] In one embodiment, the step of detecting the leakage current between the source and drain of the thin-film transistor and determining the ambient light intensity of the entire display area based on the leakage current specifically includes:

[0023] In response to receiving a power-on signal or a screen-on signal, before the backlight is turned on, the leakage current corresponding to each thin-film transistor is detected line by line to obtain the ambient light intensity corresponding to each sub-pixel.

[0024] In one embodiment, in response to receiving a power-on signal or a screen-on signal, before the backlight is turned on, the step of detecting the leakage current corresponding to each thin-film transistor row by row to obtain the ambient light intensity corresponding to each sub-pixel specifically includes:

[0025] Charge the first row of sub-pixels to V2, turn off the thin film transistor, and obtain the first leakage current of the data line corresponding to the first row of sub-pixels. The first leakage current is the leakage current corresponding to the first row of thin film transistors.

[0026] The second row of sub-pixels is charged to V2, the thin-film transistor is turned off, and the second leakage current of the data line corresponding to the second row of sub-pixels is obtained. The leakage current of the second row of thin-film transistors is the result of the second leakage current minus the first leakage current.

[0027] Increase the charging voltage of the data line to V2, charge the Nth row of sub-pixels to V2, turn off the thin-film transistors in the Nth row, restore the charging voltage of the data line to V1, obtain the Nth leakage current of the data line, and subtract the leakage current of the thin-film transistors in all previous rows from the Nth leakage current to obtain the leakage current of the thin-film transistors in the Nth row; where N is a positive integer greater than or equal to 3.

[0028] By analogy, the leakage current between the source and drain of each thin-film transistor in the entire display panel can be obtained.

[0029] In one embodiment, the step of detecting the leakage current between the source and drain of a thin-film transistor specifically includes:

[0030] During the display period, the display panel alternately performs partial backlight black insertion and full-screen black insertion;

[0031] During the local backlight insertion period, the leakage current of each thin film transistor is detected row by row to obtain the ambient light intensity of each sub-pixel in the insertion area and the sum of the ambient light intensity and backlight intensity of each sub-pixel in the non-insertion area.

[0032] During the black insertion period of the entire screen, the leakage current corresponding to each thin film transistor is detected row by row to obtain the backlight intensity of each sub-pixel corresponding to the non-black insertion area;

[0033] The ambient light intensity of each sub-pixel in the non-black-insertion area is obtained by subtracting the backlight intensity of each sub-pixel in the non-black-insertion area from the sum of the ambient light intensity and backlight intensity of each sub-pixel in the non-black-insertion area.

[0034] In one embodiment, the step of detecting the leakage current between the source and drain of a thin-film transistor specifically includes:

[0035] During the display period, partial backlight insertion is performed on the display panel. During the partial backlight insertion, the leakage current of each thin film transistor is detected row by row to obtain the sum of the ambient light intensity of each sub-pixel in the insertion area and the ambient light intensity and backlight intensity of each sub-pixel in the non-insertion area.

[0036] During the display period, the display panel is periodically subjected to a full-screen black insertion. During the full-screen black insertion, the leakage current of each thin-film transistor is detected line by line to obtain the backlight intensity of each sub-pixel in the non-black insertion area.

[0037] The ambient light intensity of each sub-pixel in the non-black-insertion area is obtained by subtracting the backlight intensity of each sub-pixel in the non-black-insertion area from the sum of the ambient light intensity and backlight intensity of each sub-pixel in the non-black-insertion area.

[0038] In one embodiment, periodically inserting a full-screen black bar into the display panel during the display period includes:

[0039] During the display period, in response to the change in the proportion of the static area exceeding the threshold, the display panel is blacked out once. During the blacking out, the leakage current of each thin film transistor is detected line by line to obtain the backlight intensity of each sub-pixel corresponding to the non-blacked-out area.

[0040] The ambient light intensity of each sub-pixel in the non-black-insertion area is obtained by subtracting the backlight intensity of each sub-pixel in the non-black-insertion area from the sum of the ambient light intensity and backlight intensity of each sub-pixel in the non-black-insertion area.

[0041] To solve the above-mentioned technical problems, the second technical solution adopted in this application is: to provide a display system, including a display panel, a backlight module and a backlight control circuit, wherein the backlight control circuit is used to execute the backlight adjustment method of any of the above embodiments.

[0042] The beneficial effects of this application are as follows: Unlike existing technologies, this application provides a backlight adjustment method and display system. The method includes: applying a voltage between the source and drain of a thin-film transistor (TFT); detecting the leakage current between the source and drain of the TFT, and determining the ambient light intensity of the entire display area based on the leakage current; processing the detected ambient light intensity to obtain a processing result; and adjusting the backlight brightness based on the processing result. This application utilizes the method of detecting leakage current by applying a voltage between the source and drain of the TFT, eliminating the need for additional hardware for ambient light intensity detection and saving costs. Furthermore, by adjusting the backlight brightness of the display screen based on the detected ambient light intensity, it eliminates the brightness reduction problem caused by black-out insertion and improves the display quality under different ambient light intensities. Attached Figure Description

[0043] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0044] Figure 1 A schematic diagram of the framework of an embodiment of the backlight adjustment method provided in this application;

[0045] Figure 2 A schematic diagram of an embodiment of the backlight adjustment method provided in this application for detecting ambient light intensity;

[0046] Figure 3 A schematic diagram of the thin-film transistor structure in the backlight adjustment method provided in this application;

[0047] Figure 4 A schematic flowchart of an embodiment of the backlight adjustment method provided in this application;

[0048] Figure 5 Provided for this application Figure 4 A schematic diagram of the framework of one embodiment of step S30;

[0049] Figure 6 A timing diagram of an embodiment of the backlight adjustment method provided in this application;

[0050] Figure 7 A schematic diagram of the framework of an embodiment of the display system provided in this application.

[0051] Reference numerals: display system 100, display panel 101, ambient detection module 102, SOC system 103, backlight control circuit 104, backlight module 105, sub-pixel 1011, thin film transistor TFT, source Ts, drain Td, gate Tg, data line D, scan line G. Detailed Implementation

[0052] The embodiments of this application will now be described in detail with reference to the accompanying drawings.

[0053] In the following description, specific details such as particular system architectures, interfaces, and technologies are presented for illustrative purposes rather than for limiting purposes, in order to provide a thorough understanding of this application.

[0054] In this article, the term "and / or" simply describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone. Additionally, the character " / " generally indicates that the preceding and following related objects have an "or" relationship. Furthermore, "more" in this article means two or more objects.

[0055] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of this application only and is not intended to limit this application.

[0056] Before providing a further detailed description of the embodiments of this application, the nouns and terms involved in the embodiments of this application will be explained, and the nouns and terms involved in the embodiments of this application shall be interpreted as follows.

[0057] The following embodiments of this application are applicable to display system 100, in conjunction with... Figure 1 and Figure 7 In one embodiment, the display system 100 includes a display panel 101, an ambient detection module 102, a System on Chip (SOC) system 103, a backlight control circuit 104, and a backlight module 105. The display panel 101 includes a plurality of sub-pixels 1011 arranged in an array. The display panel 101 is used to display an image; the ambient detection module 102 is used to detect the ambient light intensity received by each sub-pixel 1011 in the display panel 101. Specifically, when the ambient detection module 102 senses a change in the ambient light intensity of a specific area of ​​the display panel 101 in the display system 100, it feeds this information back to the SOC system 103. When the SOC system 103 receives the ambient light intensity information uploaded by the ambient detection module 102, it calls the backlight control circuit 104 to adjust the working status and working mode of the backlight module 105, thereby adjusting the display brightness of the display system 100 and improving the display quality.

[0058] Combination Figure 2 and Figure 3 In one embodiment, RGB refers to three-color sub-pixels 1011. Figure 2 The red, green, and blue rectangular blocks represent the pixel electrodes of their respective colors, and the area within the black dashed frame is the area illuminated by strong light. To obtain the specific area of ​​the display panel that is illuminated, it is necessary to accurately calculate it using the backlight adjustment method provided in this application. The method used by the ambient light detection module 102 in this application to detect changes in ambient light intensity is to utilize thin-film transistors (TFTs) in the existing panel architecture to detect the magnitude of leakage current, thereby reflecting the ambient light intensity received by the corresponding area.

[0059] like Figure 4 As shown, Figure 4 This is a schematic flowchart of an embodiment of the backlight adjustment method provided in this application. In one embodiment, the steps of the backlight adjustment method provided in this application include:

[0060] Step S10: Apply a voltage between the source and drain of the thin-film transistor;

[0061] Step S20: Detect the leakage current between the source and drain of the thin-film transistor, and determine the ambient light intensity of the entire display area based on the leakage current;

[0062] Step S30: Process the detection results of ambient light intensity to obtain the processing result;

[0063] Step S40: Adjust the backlight brightness based on the processing results.

[0064] It should be noted that the thin-film transistor (TFT) is an electronic device in the display panel 101 used to control the pixel switching. The source Ts of the TFT is connected to the data line D on the left to receive data voltage; the gate Tg is connected to the scan line G above, which is equivalent to a "switch" to control the working state of the scan line G; the drain Td is connected to the pixel electrode on the right; and the middle is the semiconductor channel region.

[0065] In one embodiment, when there is a voltage difference between the two ends of the thin-film transistor (TFT), namely the drain Td and the source Ts, even if the TFT is turned off and the gate Tg is in a low-voltage state, the TFT cannot be completely turned off, resulting in leakage current. Furthermore, when light shines on the TFT, the leakage current increases with the increase of ambient light intensity. Therefore, the ambient light intensity of the corresponding display area can be reflected by detecting the leakage current between the source Ts and drain Td of the TFT. This application utilizes this principle to detect the ambient light intensity of various areas of the display panel, thereby adjusting and controlling the backlight, solving the problem of uneven brightness caused by black bars, and improving the display quality of the display panel.

[0066] In one embodiment, processing the ambient light intensity detection result in step S30 includes using the SOC to convert the read full-frame leakage current data into a light intensity data signal. It is understood that the conversion relationship between leakage current data and light intensity data can be obtained experimentally during the display panel manufacturing process. Once the display panel manufacturing process is finalized, this conversion relationship can be applied to all similar display panels.

[0067] In one embodiment, after obtaining the light intensity data signal of the entire display panel, the light intensity data signal intensity is divided into multiple levels, as shown in the table below:

[0068]

[0069] The light intensity data signal, ranging from 100 lux to 3000 lux, is divided into multiple levels. Different brightness adjustment ratios are set for different light intensity ranges, while maintaining the backlight black insertion frequency. At this point, only the brightness of the mini-LED beads when the backlight is on needs adjustment, because the brightness of the mini-LED beads varies depending on the displayed image. Therefore, the set ratio can be such that when the ambient light intensity is high and has a significant impact on the display image, the brightness of the corresponding beads will increase proportionally. This ratio can be adjusted up or down according to the characteristics of different products. For example, when a user moves from a shady spot to a brightly lit area, the ambient light increases, causing the phone screen's brightness to decrease. In this case, the brightness of the corresponding LEDs in the backlight module 105 can be increased to improve the screen's brightness and thus enhance display quality. Similarly, when a user uses a computer near a window, sunlight illuminates half of the screen. The brightness of the LEDs in the backlight module 105 is increased for the illuminated portion and decreased for the unilluminated portion. By detecting changes in ambient light, the backlight is adjusted to improve display quality and user experience.

[0070] In one embodiment, because the brightness of a mini-LED string is uniform across a given area, and the size of this area is much larger than a single sub-pixel 1011, it is impossible to adjust the current and brightness of the string based on the size of the sub-pixel 1011. However, considering practical applications, the area illuminated by ambient light is generally much larger than a single sub-pixel 1011, and thus much larger than the LED string itself. Therefore, as... Figure 5 As shown, if some areas of the display area backlit by a single LED string have strong ambient light (e.g., area q2) and some areas have weak ambient light (e.g., area q1), then the area with strong ambient light in area q2 (i.e., the display area backlit by a single LED string) is used as a reference to adjust the current of the LED string, thereby achieving backlight adjustment and control. This solves the problem of uneven brightness caused by black LED insertion and improves the display quality of the display panel.

[0071] This embodiment utilizes a voltage applied between the source (Ts) and drain (Td) of a thin-film transistor (TFT) to detect leakage current, eliminating the need for additional hardware for ambient light intensity detection and saving costs. Furthermore, it adjusts the backlight brightness of the display screen based on the detected ambient light intensity, eliminating the brightness reduction problem caused by black insertion and improving the display quality under different ambient light intensities.

[0072] In one embodiment, the step of detecting the leakage current between the source Ts and the drain Td of the thin-film transistor TFT specifically includes: performing backlight black insertion on the entire display panel; during the black insertion period, detecting the leakage current corresponding to each thin-film transistor TFT row by row to obtain the ambient light intensity corresponding to each sub-pixel 1011.

[0073] It should be noted that during the backlight blackout period, the backlight is completely off, and the display panel is only affected by ambient light, thus avoiding backlight signal interference with leakage current detection. The detection process uses a line-by-line scanning mechanism: first, a voltage is applied to the first row of thin-film transistor TFTs, and the leakage current of that row is detected through the data line; then, a voltage is applied to the second row of thin-film transistor TFTs, and the leakage current detection result of the first row is subtracted to eliminate historical influences, and so on to complete the full-screen line-by-line detection. The ambient light intensity corresponding to each sub-pixel 1011 is quantified by the leakage current magnitude, and the leakage current increases with increasing light intensity, its magnitude being positively correlated with ambient light intensity.

[0074] This embodiment detects leakage current during backlight insertion, ensuring that ambient light intensity measurement is not interfered with by the backlight signal, thereby achieving accurate acquisition of ambient light data. By detecting the leakage current corresponding to each sub-pixel 1011 row by row, the ambient light distribution information is accurate to the sub-pixel 1011 level, which is beneficial for supporting adaptive adjustment of backlight zones. By obtaining the ambient light intensity corresponding to each sub-pixel 1011 row by row, the backlight brightness adjustment parameters are more finely matched with the ambient light distribution, further improving the display quality of dynamic images.

[0075] In one embodiment, the step of detecting the leakage current corresponding to each thin-film transistor TFT row by row during black insertion to obtain the ambient light intensity corresponding to each sub-pixel 1011 specifically includes: adjusting the pixel voltage of all pixels to be consistent with the charging voltage of their corresponding data lines, denoted as V1; increasing the charging voltage of the data lines to V2, and charging all sub-pixels 1011 row by row, so that the pixel voltage of the sub-pixel 1011 forms a voltage difference with the data lines; and detecting the leakage current corresponding to each thin-film transistor TFT row by row to obtain the ambient light intensity corresponding to each sub-pixel 1011.

[0076] Specifically, during the detection process, all pixels are charged until their voltage matches the charging voltage of their corresponding data lines, denoted as V1. At this point, the voltage difference between the data voltage of the entire panel and the data line is zero, and there is no voltage difference between the drain Td and source Ts of the thin-film transistor (TFT), meaning no leakage current is generated between them. Subsequently, the data line charging voltage is increased to V2, and the sub-pixels 1011 in the current row are charged row by row, creating a voltage difference between the pixel voltage and the data line. This generates a leakage current proportional to the ambient light intensity even when the TFT is off.

[0077] This embodiment establishes a reference voltage (V1) that aligns with the pixel voltage and data line voltage, ensuring no voltage difference interference during initial detection and thus accurately determining the starting point for leakage current measurement. Increasing the data line voltage to V2 creates a voltage difference, directly linking the leakage current magnitude to ambient light intensity, thereby enabling quantitative detection of ambient light intensity. By obtaining the ambient light intensity corresponding to each sub-pixel (1011) row by row, the backlight adaptive adjustment parameters can be dynamically optimized based on fine-grained regional data, further improving the display quality of dynamic images.

[0078] In one embodiment, the steps of increasing the charging voltage of the data line to V2 and charging all sub-pixels 1011 row by row to create a voltage difference between the pixel voltage of the sub-pixels 1011 and the data line, and detecting the leakage current corresponding to the thin-film transistor TFT row by row to obtain the ambient light intensity corresponding to each sub-pixel 1011 specifically include: increasing the charging voltage of the data line to V2, charging the sub-pixels 1011 of the first row to V2, turning off the thin-film transistor TFT of the first row, restoring the charging voltage of the data line to V1, obtaining the first leakage current of the data line, and using the first leakage current as the leakage current corresponding to the thin-film transistor TFT of the first row; increasing the charging voltage of the data line to V2, charging the sub-pixels 1011 of the second row to V2, and turning off the second row... The process involves restoring the charging voltage of the data line to V1 for each thin-film transistor (TFT) and obtaining the second leakage current of the data line. The second leakage current is subtracted from the first leakage current to obtain the leakage current of the TFT in the second row. The charging voltage of the data line is then increased to V2, and the Nth row sub-pixel 1011 is charged to V2. The TFT in the Nth row is then turned off. The charging voltage of the data line is restored to V1, and the Nth leakage current of the data line is obtained. The Nth leakage current is subtracted from the leakage current of all preceding rows of TFTs to obtain the leakage current of the TFT in the Nth row. Here, N is a positive integer greater than or equal to 3. This process is repeated to obtain the leakage current between the source Ts and drain Td of each TFT in the entire display panel.

[0079] It should be noted that the data lines of the display panel are electrically connected to the pixel electrodes of sub-pixels 1011, and the thin-film transistors (TFTs) are located in the control path of sub-pixels 1011. After the first row of sub-pixels 1011 is charged to V2, the first row of TFTs is turned off, the data line voltage returns to V1, and a voltage difference is formed between the pixel voltage and the data line. Leakage current is generated when the TFTs are off. The leakage current detected at this time originates only from the ambient light intensity of the first row of sub-pixels 1011. When detecting the leakage current corresponding to the second row of sub-pixels 1011, the second row of sub-pixels 1011 is charged to V2, and the data line voltage returns to V1. The detected leakage current is the sum of the leakage currents corresponding to the first and second rows of sub-pixels 1011. Therefore, subtracting the leakage current of the first row of sub-pixels 1011 yields the leakage current corresponding to the second row of sub-pixels 1011. When detecting the leakage current corresponding to sub-pixel 1011 in the Nth row, the leakage currents of all preceding rows are subtracted. Understandably, when N=3, subtracting the leakage currents corresponding to sub-pixels 1011 in the first and second rows from the detected result yields the leakage current corresponding to sub-pixels 1011 in the third row; when N=4, subtracting the leakage currents corresponding to sub-pixels 1011 in the first, second, and third rows from the detected result yields the leakage current corresponding to sub-pixels 1011 in the fourth row. This process continues to obtain the leakage current between the source Ts and drain Td of each thin-film transistor (TFT) in the entire display panel 101.

[0080] It should be noted that when detecting the leakage current corresponding to sub-pixel 1011 in the Nth row, the leakage current of all previous rows is subtracted. The leakage current of all previous rows can be the total current of the N-1th row measured last time. This can avoid errors caused by the change of the voltage difference between the pixel voltage and the data line over time.

[0081] In one embodiment, in response to the detection result of the leakage current between the source Ts and the drain Td of each thin-film transistor TFT of the entire display panel 101, the current of the lamp beads in the corresponding area of ​​the backlight module 105 is adjusted according to the backlight adjustment method of the above embodiment. After the charging voltage of the data line is set to zero, the data line is charged according to the display screen, so that the charging trend of the data line is consistent when the screen is displayed.

[0082] In one specific embodiment, such as Figure 6 As shown, after the first frame signal of the display panel is fully charged to V1, the STV (Start Vertical) activates the pulse signal for the second frame. At this time, the thin-film transistors (TFTs) in the first row are turned on, and the scan line G is turned on. Assuming the corresponding signal is... Figure 2In the first row of the thin-film transistor (TFT) circuit, when this row is turned on, it charges the sub-pixels 1011 in the first row, charging all the pixel voltages in the first row to V2. At this time, the voltage of the other rows is still V1. After charging is complete, the TFT corresponding to sub-pixel 1011 in the first row is turned off, and the data line voltage is pulled back to V1. The pixel voltage level of the first row remains at V2, and V2 is greater than V1. Therefore, except for the pixel voltage of the first row which is different from the data line voltage, the pixel voltage of the other rows is consistent with the data line voltage. Thus, the TFT corresponding to each sub-pixel 1011 in the other rows... For example, there is no voltage difference between the drain Td and source Ts of the thin-film transistor TFTs corresponding to sub-pixels 1011 in the second row and the third row, so there is no leakage current. However, in the first row, because the voltage V2 after charging is greater than V1, there is a voltage difference. Therefore, even when the thin-film transistor TFTs are turned off, there will be leakage current flowing from the pixel electrode to the data line. The magnitude of the leakage current varies depending on the light intensity. Therefore, it is only necessary to detect the leakage current of each data line to obtain the ambient light intensity of each sub-pixel 1011 in the first row.

[0083] After detecting the ambient light intensity of each sub-pixel 1011 in the first row, the charging voltage of the data line is increased to V2, and the thin-film transistor TFT corresponding to the second row sub-pixel 1011 is turned on to charge the second row sub-pixel 1011. When the second row sub-pixel 1011 is fully charged and reaches the voltage of V2, the thin-film transistor TFT corresponding to the second row sub-pixel 1011 is turned off, and the charging voltage of the data line is restored to V1. The current of the data line is detected again during the detection time. The current at this time is the sum of the currents of the first row and the second row. Therefore, the current obtained during the second row detection needs to be subtracted from the current tested during the first row to obtain the ambient light intensity of each sub-pixel 1011 in the second row.

[0084] The charging voltage of the data line is increased to V2, and the thin-film transistor TFT corresponding to the Nth row sub-pixel 1011 is turned on to charge the Nth row sub-pixel 1011. When the Nth row sub-pixel 1011 is fully charged and reaches the voltage of V2, the thin-film transistor TFT corresponding to the Nth row sub-pixel 1011 is turned off, and the charging voltage of the data line is restored to V1. The Nth leakage current of the data line is obtained, and the leakage current of the thin-film transistor TFTs of all the preceding rows is subtracted from the Nth leakage current. This result is used as the leakage current of the thin-film transistor TFT corresponding to the Nth row sub-pixel 1011, thereby obtaining the ambient light intensity of each sub-pixel 1011 in the Nth row.

[0085] It should be noted that in this embodiment, N is a positive integer greater than or equal to 3. Understandably, when N=3, the leakage current corresponding to the first and second row sub-pixels 1011 is obtained by subtracting the leakage current corresponding to the third row sub-pixels 1011 from the detected result; when N=4, the leakage current corresponding to the first, second, and third row sub-pixels 1011 is obtained by subtracting the leakage current corresponding to the fourth row sub-pixels 1011 from the detected result. This process continues to obtain the leakage current between the source Ts and drain Td of each thin-film transistor (TFT) in the entire display panel, ensuring that the data in each row is not affected by historical data.

[0086] In this embodiment, the data of each row can be recorded using a memory, and then the data of the next row needs to be discarded from the previous test data, so as to obtain the leakage current between the source Ts and the drain Td of each thin film transistor TFT of the entire display panel row by row.

[0087] This embodiment uses a mechanism that subtracts the leakage current of the previous row during line-by-line detection, so that the leakage current measurement of each row of sub-pixels 1011 only reflects the ambient light intensity of the current row, thereby achieving accurate quantification of ambient light distribution, further improving the display quality of dynamic images, and solving the problem of uneven brightness caused by changes in ambient light.

[0088] In one embodiment, the step of using a thin-film transistor (TFT) in the display panel to detect the leakage current between the source and drain of the TFT and determining the ambient light intensity of the entire display area based on the leakage current specifically includes: in response to receiving a power-on signal or a screen-on signal, before the backlight is turned on, detecting the leakage current corresponding to each TFT row by row to obtain the ambient light intensity corresponding to each sub-pixel 1011.

[0089] It should be noted that when a power-on signal or screen-on signal is received, the display system immediately enters the detection mode. At this time, the backlight is turned off to avoid interference from the backlight intensity on the ambient light detection.

[0090] The system first applies voltage to the thin-film transistor TFTs in the first row of the display panel and detects the leakage current of the corresponding data lines. Then, it proceeds row by row, applying the same voltage to each row of thin-film transistor TFTs and detecting the leakage current. The system can record the leakage current data corresponding to each row of thin-film transistor TFTs in real time through memory and remove the leakage current data corresponding to the thin-film transistor TFTs in the previous row to eliminate accumulated errors. Finally, the leakage current data is converted into an ambient light intensity signal.

[0091] This embodiment performs detection in response to a power-on signal or a screen-on signal, ensuring that ambient light intensity measurement is completed during system initialization, thus avoiding display abnormalities caused by delays. Leakage current detection is performed before the backlight is turned on, ensuring that the detection results of the ambient light intensity received by the sub-pixel 1011 corresponding to each row of thin-film transistors (TFTs) are not affected by the backlight intensity.

[0092] In one embodiment, in response to receiving a power-on signal or a screen-on signal, before the backlight is turned on, the step of detecting the leakage current corresponding to each thin-film transistor TFT row by row to obtain the ambient light intensity corresponding to each sub-pixel 1011 specifically includes: charging the first row of sub-pixels 1011 to V2, turning off the thin-film transistor TFT, and obtaining the first leakage current of the data line corresponding to the first row of sub-pixels 1011, wherein the first leakage current is the leakage current corresponding to the first row of thin-film transistor TFTs; charging the second row of sub-pixels 1011 to V2, turning off the thin-film transistor TFTs, and obtaining the second leakage current of the data line corresponding to the second row of sub-pixels 1011, wherein... In the process, the leakage current of the second row of thin-film transistor TFTs is the result of the second leakage current minus the first leakage current; the charging voltage of the data line is increased to V2, the Nth row sub-pixel 1011 is charged to V2, the Nth row of thin-film transistor TFTs is turned off, the charging voltage of the data line is restored to V1, the Nth leakage current of the data line is obtained, and the Nth leakage current is subtracted from the leakage current of all the preceding rows of thin-film transistor TFTs as the leakage current of the Nth row of thin-film transistor TFTs; where N is a positive integer greater than or equal to 3; and so on, to obtain the leakage current between the source Ts and the drain Td of each thin-film transistor TFT in the entire display panel.

[0093] It should be noted that V1 can be defined, for example, as the base voltage of the data line, and V2 can be defined, for example, as the charging voltage of sub-pixel 1011, and V2 is greater than V1.

[0094] Specifically, the display system charges the sub-pixels 1011 corresponding to the first row of thin-film transistor TFTs to V2, while maintaining the data line voltage at V1. The first row of thin-film transistor TFTs is turned off, but leakage current is generated due to the voltage difference between V2 and V1. The leakage current between the source Ts and drain Td of each thin-film transistor TFT in the first row is detected. Subsequently, the sub-pixels 1011 corresponding to the second row of thin-film transistor TFTs are charged to V2, and the leakage current between the source Ts and drain Td of each thin-film transistor TFT in the second row is detected. The detected current includes the leakage current corresponding to the first row of sub-pixels 1011 and the second row of sub-pixels 1011. The leakage current corresponding to the TFT in the second row is obtained by subtracting the leakage current data corresponding to the TFT in the first row. For the Nth row, the data line charging voltage is first increased to V2 to eliminate the influence of the previous sequence. The sub-pixel 1011 corresponding to the TFT in the Nth row is charged to V2 and then the TFT in the Nth row is turned off. The data line voltage is then restored to V1. The leakage current between the source Ts and the drain Td of each TFT in the Nth row is detected. The leakage current corresponding to each TFT in the Nth row is obtained by subtracting the sum of the leakage current between the source Ts and the drain Td of the TFTs in the first N-1 rows.

[0095] In other embodiments, an independent photosensitive module can be added to the backlight adjustment method provided in this application. For example, the backlight adjustment method provided in this application further includes, after receiving the power-on signal or screen-on signal and before step S10, first enabling a dark detection mode, that is, detecting whether the environment in which the display system is located is a dark environment through a dedicated light sensor; if so, then the ambient light detection in step S10 is not performed, reducing detection time and saving power. It is understandable that when a user wakes up at night and checks the time on their phone, the light sensor detects that the environment in which the display system is located is a dark environment, stops detecting the ambient light intensity, and directly selects the overall brightness of the backlight based on the dark environment.

[0096] Prioritize determining whether the local time of the system's location falls within the user's sleep time (e.g., 10 PM to 6 AM). The specific timeframe can be adjusted based on individual user sleep habits and season. If the system's local time falls within the user's sleep time, then enable the dark detection mode; otherwise, proceed directly to step S10 upon receiving a power-on or screen-on signal.

[0097] In other embodiments, upon receiving a power-on signal or screen-on signal, the process can proceed directly to step S10. Based on the detection result of step S10, it can be determined whether the environment in which the display system is located is dark. If so, the overall brightness of the backlight can be directly selected to be turned on based on the dark environment. Furthermore, in this step, if the number or probability of detecting a dark environment within a certain time period exceeds a threshold, that time period can be set as the threshold for enabling the dark detection mode. For example, office workers may experience a dark environment during their lunch break with the lights off, or some elderly people may experience a dark environment during their regular daytime naps. By automatically determining user habits using the above method, the dark detection mode for that time period can be automatically activated. When a dark environment is detected, the brightness of the display panel can be directly increased by adjusting the backlight brightness, saving energy and further improving display quality.

[0098] This embodiment detects and subtracts the leakage current data corresponding to the TFT sub-pixels 1011 in the previous row line by row, thus avoiding accumulated errors in leakage current measurement and achieving high-precision quantification of ambient light intensity. By restoring the data line voltage to V1, the leakage current detection process is unaffected by voltage fluctuations, which is beneficial for obtaining stable and reliable ambient light data.

[0099] In one embodiment, the step of detecting the leakage current between the source Ts and drain Td of the thin-film transistor TFT specifically includes: alternating between partial backlight black insertion and full-screen black insertion on the display panel during the display period; during partial backlight black insertion, detecting the leakage current corresponding to each thin-film transistor TFT row by row to obtain the ambient light intensity of each sub-pixel 1011 corresponding to the black insertion area and the sum of the ambient light intensity and backlight intensity of each sub-pixel 1011 corresponding to the non-black insertion area; during full-screen black insertion, detecting the leakage current corresponding to each thin-film transistor TFT row by row to obtain the backlight intensity of each sub-pixel 1011 corresponding to the non-black insertion area; subtracting the backlight intensity of each sub-pixel 1011 corresponding to the non-black insertion area from the sum of the ambient light intensity and backlight intensity of each sub-pixel 1011 corresponding to the non-black insertion area to obtain the ambient light intensity of each sub-pixel 1011 corresponding to the non-black insertion area.

[0100] It should be noted that this embodiment is applicable to application scenarios where the dynamic area changes within a large range and at a fast rate, i.e., scenarios where most of the content on the display screen, such as 80% of the displayed content, is dynamic content, such as when a teacher displays a teaching video to students in full-screen format during a lesson.

[0101] Specifically, during partial backlight insertion, the backlight is turned off in some areas of the display panel while it is turned on in others. In this case, the TFT leakage current in the inserted area only reflects the ambient light intensity, while the leakage current in the non-inserted area reflects the combined effect of the ambient light intensity and the backlight intensity. During full-screen insertion, the entire display panel receives no ambient light, and the detected leakage current actually corresponds to the backlight intensity. Based on this, partial and full-screen insertion are performed alternately within the display cycle. During partial insertion, the system scans line by line, detecting and obtaining the ambient light intensity of each sub-pixel 1011 corresponding to the inserted area, as well as the sum of the ambient light intensity and backlight intensity of each sub-pixel 1011 corresponding to the non-inserted area. During full-screen insertion, the system detects and obtains the backlight intensity of each sub-pixel 1011 corresponding to the non-inserted area line by line. The ambient light intensity of each sub-pixel 1011 corresponding to the non-inserted area is obtained by subtracting the backlight intensity of each sub-pixel 1011 corresponding to the non-inserted area from the sum of the ambient light intensity and backlight intensity of each sub-pixel 1011 corresponding to the non-inserted area.

[0102] It should be noted that the black insertion area corresponding to partial backlighting is a dynamic area, while the non-black insertion area is a static area.

[0103] This embodiment can save costs to a certain extent by alternating between partial backlight black insertion and full-screen black insertion. It eliminates the need for backlight black insertion every time ambient light is detected, reducing the number of times the entire backlight module's LED string needs to be turned on and off due to backlight black insertion, thus reducing the probability of damage.

[0104] In one embodiment, the step of detecting the leakage current between the source Ts and drain Td of the thin-film transistor TFT specifically includes: performing partial backlight black insertion on the display panel during the display period; during the partial backlight black insertion, detecting the leakage current corresponding to each thin-film transistor TFT row by row to obtain the sum of the ambient light intensity of each sub-pixel 1011 corresponding to the black insertion area and the ambient light intensity and backlight intensity of each sub-pixel 1011 corresponding to the non-black insertion area; periodically performing full-screen black insertion on the display panel during the display period; during the full-screen black insertion, detecting the leakage current corresponding to each thin-film transistor TFT row by row to obtain the backlight intensity of each sub-pixel 1011 corresponding to the non-black insertion area; subtracting the backlight intensity of each sub-pixel 1011 corresponding to the non-black insertion area from the sum of the ambient light intensity and backlight intensity of each sub-pixel 1011 corresponding to the non-black insertion area to obtain the ambient light intensity of each sub-pixel 1011 corresponding to the non-black insertion area.

[0105] It should be noted that this embodiment is applicable to scenarios where the dynamic area in the display screen is fixed or relatively fixed, such as playing videos using half-screen or 75% screen, or when students are learning through online courses and the teacher is explaining the course, only the teacher's small window is displayed on the student's computer screen as the dynamic area, and the dynamic area will not change before the end of the lecture.

[0106] Specifically, partial backlight black frame insertion refers to inserting a black frame in a specific area of ​​the display panel while other areas remain displayed. Full-screen black frame insertion refers to flipping the entire liquid crystal of the panel to insert a black frame. During partial backlight black frame insertion, by detecting the leakage current of each thin-film transistor (TFT) corresponding to the black frame insertion area, the ambient light intensity of each sub-pixel 1011 in the black frame insertion area and the sum of the ambient light intensity and backlight intensity of each sub-pixel 1011 in the non-black frame insertion area can be obtained line by line. During full-screen black frame insertion, by detecting the leakage current of each thin-film transistor (TFT) corresponding to the non-black frame insertion area, the backlight intensity of each sub-pixel 1011 in the non-black frame insertion area can be obtained line by line.

[0107] In this embodiment, the black insertion frequency can be local backlight black insertion detection once every 100 milliseconds between display frames, or full-screen black insertion detection once per second, to adapt to changes in ambient light intensity; or the detection interval can be dynamically adjusted according to the fluctuation rate of ambient light, for example, increasing the local backlight black insertion detection frequency to once every 50 milliseconds in a strong light environment, and reducing the full-screen black insertion detection frequency to once every 2 seconds in a weak light environment, to ensure a balance between detection accuracy and display smoothness.

[0108] In one embodiment, periodically performing a full-screen black insertion on the display panel during the display period includes: during the display period, in response to a change in the proportion of the static area exceeding a threshold, performing a full-screen black insertion on the display panel; during the full-screen black insertion, detecting the leakage current corresponding to each thin-film transistor (TFT) line by line to obtain the backlight intensity of each sub-pixel 1011 corresponding to the non-black insertion area; and subtracting the backlight intensity of each sub-pixel 1011 corresponding to the non-black insertion area from the sum of the ambient light intensity and the backlight intensity of each sub-pixel 1011 corresponding to the non-black insertion area to obtain the ambient light intensity of each sub-pixel 1011 corresponding to the non-black insertion area.

[0109] It should be noted that when the dynamic area on the display screen moves significantly to the original static area or the proportion of the static area on the entire display screen changes significantly, such as when a game ends and the entire screen changes, a full-screen black insertion needs to be performed again.

[0110] Specifically, a static area refers to an area in the displayed content that experiences minimal dynamic changes. Its percentage change refers to the change in the proportion of this area to the entire display area, with a threshold value set as a preset percentage change, such as 5% or 10%. When changes in the displayed content cause fluctuations in the static area's percentage to exceed the threshold, the system re-triggers full-screen black pixel insertion detection. The display panel analyzes the inter-frame content in real time, calculates the change in the static area's percentage, and immediately performs full-screen black pixel insertion when the change exceeds the threshold. During full-screen black pixel insertion, the leakage current of each thin-film transistor (TFT) corresponding to the non-inserted area is detected line by line to obtain the backlight intensity of each sub-pixel 1011 corresponding to the non-inserted area. The ambient light intensity of each sub-pixel 1011 corresponding to the non-inserted area is obtained by subtracting the backlight intensity of each sub-pixel 1011 corresponding to the non-inserted area from the sum of the ambient light intensity and backlight intensity.

[0111] This embodiment triggers full-screen black insertion detection when the static area ratio changes beyond a threshold, enabling the system to dynamically adjust the detection timing based on the displayed content. This reduces redundant detection operations, lowers system power consumption, facilitates adaptive backlight adjustment in dynamic display scenarios, and improves display quality.

[0112] like Figure 7 As shown, in one embodiment, this application provides a display system 100, including a display panel 101, a backlight module 105, and a backlight control circuit 104, wherein the backlight control circuit 104 is used to execute the backlight adjustment method of any of the above embodiments.

[0113] Specifically, the display panel 101 serves as the image display carrier, the backlight module 105 is located behind the display panel to provide a light source, and the backlight control circuit 104 is electrically connected to the backlight module 105 and controls its brightness output.

[0114] This embodiment integrates an ambient light detection mechanism through the backlight control circuit 104, enabling the display system 100 to dynamically compensate for changes in ambient light, thereby reducing brightness loss caused by black pixel insertion. By analyzing ambient light intensity using the leakage current of the sub-pixels 1011, the display system 100 automatically optimizes black pixel insertion parameters under different lighting conditions, which helps reduce visual flicker. Through an ambient light detection method that requires no additional hardware, the display system 100 further improves the display quality of dynamic images while maintaining the black pixel insertion technology to reduce ghosting effects.

[0115] In some embodiments, the functions or modules of the apparatus provided in this disclosure can be used to perform the methods described in the above method embodiments. The specific implementation can be referred to the description of the above method embodiments, and for the sake of brevity, it will not be repeated here.

[0116] The description of the various embodiments above tends to emphasize the differences between the various embodiments. The similarities or similarities between them can be referred to, and for the sake of brevity, they will not be repeated here.

[0117] The above are merely embodiments of this application and do not limit the scope of patent protection of this application. Any equivalent structural or procedural changes made using the content of this application’s specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A backlight adjustment method, characterized in that, include: A voltage is applied between the source and drain of the thin-film transistor; The leakage current between the source and drain of the thin-film transistor is detected, and the ambient light intensity of the entire display area is determined based on the leakage current. The detection results of the ambient light intensity are processed to obtain the processing result; Adjust the backlight brightness based on the processing results; The step of detecting the leakage current between the source and drain of the thin-film transistor specifically includes: Backlight insertion for the entire display panel; During the black insertion period, the leakage current corresponding to each thin film transistor is detected line by line to obtain the ambient light intensity corresponding to each sub-pixel; The step of detecting the leakage current corresponding to each thin-film transistor row by row during black pixel insertion to obtain the ambient light intensity corresponding to each sub-pixel specifically includes: Adjust the pixel voltage of all pixels to be consistent with the charging voltage of their corresponding data lines, and record it as V1; The charging voltage of the data line is increased to V2, and all sub-pixels are charged row by row, so that the pixel voltage of the sub-pixel forms a voltage difference with the data line; The leakage current corresponding to the thin-film transistor is detected row by row to obtain the ambient light intensity corresponding to each sub-pixel.

2. The backlight adjustment method according to claim 1, characterized in that, The steps of increasing the charging voltage of the data line to V2, charging all sub-pixels row by row to create a voltage difference between the pixel voltage of the sub-pixels and the data line, and detecting the leakage current corresponding to the thin-film transistor row by row to obtain the ambient light intensity corresponding to each sub-pixel specifically include: Increase the charging voltage of the data line to V2, charge the sub-pixels of the first row to V2, turn off the thin film transistors of the first row, restore the charging voltage of the data line to V1, obtain the first leakage current of the data line, and use the first leakage current as the leakage current corresponding to the thin film transistors of the first row. Increase the charging voltage of the data line to V2, charge the second row of sub-pixels to V2, turn off the thin film transistors in the second row, restore the charging voltage of the data line to V1, obtain the second leakage current of the data line, and subtract the first leakage current from the second leakage current as the leakage current of the thin film transistors in the second row. The charging voltage of the data line is increased to V2, the Nth row of sub-pixels is charged to V2, the thin-film transistor in the Nth row is turned off, the charging voltage of the data line is restored to V1, the Nth leakage current of the data line is obtained, and the leakage current of the thin-film transistor in the Nth row is obtained by subtracting the leakage current of the thin-film transistor in all previous rows from the Nth leakage current; where N is a positive integer greater than or equal to 3. Similarly, the leakage current between the source and drain of each thin-film transistor in the entire display panel is obtained.

3. A backlight adjustment method, characterized in that, include: A voltage is applied between the source and drain of the thin-film transistor; The leakage current between the source and drain of the thin-film transistor is detected, and the ambient light intensity of the entire display area is determined based on the leakage current. The detection results of the ambient light intensity are processed to obtain the processing result; Adjust the backlight brightness based on the processing results; The step of detecting the leakage current between the source and drain of the thin-film transistor and determining the ambient light intensity of the entire display area based on the leakage current specifically includes: In response to receiving a power-on signal or a screen-on signal, before the backlight is turned on, the leakage current corresponding to each of the thin-film transistors is detected line by line to obtain the ambient light intensity corresponding to each sub-pixel; The step of detecting the leakage current corresponding to each thin-film transistor row by row to obtain the ambient light intensity corresponding to each sub-pixel in response to receiving a power-on signal or a screen-on signal before the backlight is turned on specifically includes: Charge the first row of sub-pixels to V2, turn off the thin film transistor, and obtain the first leakage current of the data line corresponding to the first row of sub-pixels. The first leakage current is the leakage current corresponding to the thin film transistor in the first row. The second row of sub-pixels is charged to V2, the thin film transistor is turned off, and the second leakage current of the data line corresponding to the second row of sub-pixels is obtained, wherein the leakage current of the thin film transistor in the second row is the result of the second leakage current minus the first leakage current; The charging voltage of the data line is increased to V2, the Nth row of sub-pixels is charged to V2, the thin-film transistor in the Nth row is turned off, the charging voltage of the data line is restored to V1, the Nth leakage current of the data line is obtained, and the leakage current of the thin-film transistor in the Nth row is obtained by subtracting the leakage current of the thin-film transistor in all previous rows from the Nth leakage current; where N is a positive integer greater than or equal to 3. Similarly, the leakage current between the source and drain of each thin-film transistor in the entire display panel is obtained.

4. A backlight adjustment method, characterized in that, include: A voltage is applied between the source and drain of the thin-film transistor; The leakage current between the source and drain of the thin-film transistor is detected, and the ambient light intensity of the entire display area is determined based on the leakage current. The detection results of the ambient light intensity are processed to obtain the processing result; Adjust the backlight brightness based on the processing results; The step of detecting the leakage current between the source and drain of the thin-film transistor specifically includes: During the display period, the display panel alternately performs partial backlight black insertion and full-screen black insertion; During the local backlight insertion period, the leakage current corresponding to each thin film transistor is detected row by row to obtain the ambient light intensity of each sub-pixel corresponding to the insertion area and the sum of the ambient light intensity and backlight intensity of each sub-pixel corresponding to the non-insertion area. During the black insertion period of the entire screen, the leakage current corresponding to each of the thin film transistors is detected line by line to obtain the backlight intensity of each sub-pixel corresponding to the non-black insertion area; The ambient light intensity of each sub-pixel corresponding to the non-black insertion area is obtained by subtracting the backlight intensity of each sub-pixel corresponding to the non-black insertion area from the sum of the ambient light intensity and backlight intensity of each sub-pixel corresponding to the non-black insertion area.

5. A backlight adjustment method, characterized in that, include: A voltage is applied between the source and drain of the thin-film transistor; The leakage current between the source and drain of the thin-film transistor is detected, and the ambient light intensity of the entire display area is determined based on the leakage current. The detection results of the ambient light intensity are processed to obtain the processing result; Adjust the backlight brightness based on the processing results; The step of detecting the leakage current between the source and drain of the thin-film transistor specifically includes: During the display period, partial backlight insertion is performed on the display panel interval. During the partial backlight insertion, the leakage current corresponding to each thin film transistor is detected row by row to obtain the sum of the ambient light intensity of each sub-pixel corresponding to the insertion area and the ambient light intensity and backlight intensity of each sub-pixel corresponding to the non-insertion area. During the display period, the display panel is periodically subjected to a full-screen black insertion. During the full-screen black insertion, the leakage current corresponding to each thin-film transistor is detected row by row to obtain the backlight intensity of each sub-pixel corresponding to the non-black insertion area. The ambient light intensity of each sub-pixel corresponding to the non-black insertion area is obtained by subtracting the backlight intensity of each sub-pixel corresponding to the non-black insertion area from the sum of the ambient light intensity and backlight intensity of each sub-pixel corresponding to the non-black insertion area.

6. The backlight adjustment method according to claim 5, characterized in that, The step of periodically inserting a full-screen black bar into the display panel during the display period includes: During the display period, in response to the change in the proportion of the static area exceeding a threshold, the display panel is subjected to full-screen black insertion once. During the full-screen black insertion, the leakage current corresponding to each thin-film transistor is detected row by row to obtain the backlight intensity of each sub-pixel corresponding to the non-black insertion area. The ambient light intensity of each sub-pixel corresponding to the non-black insertion area is obtained by subtracting the backlight intensity of each sub-pixel corresponding to the non-black insertion area from the sum of the ambient light intensity and backlight intensity of each sub-pixel corresponding to the non-black insertion area.

7. A display system, characterized in that, It includes a display panel, a backlight module, and a backlight control circuit, wherein the backlight control circuit is used to perform the backlight adjustment method according to any one of claims 1-6.

Images