Two-dimensional antiferromagnetic material and preparation method and application thereof

Two-dimensional Mn(InTe2)2 crystals were prepared by a stepwise precursor strategy and constant-voltage confined flux epitaxy, which solved the problems of compositional segregation and magnetic order destruction in the preparation of two-dimensional materials in the prior art. This method achieved the growth of two-dimensional materials with high crystallinity and structural stability, and is suitable for high-density magnetic storage devices.

CN121969009APending Publication Date: 2026-05-01XIDIAN UNIV
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Patent Information

Application Number
CN202610099144.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-01-26
Publication Date
2026-05-01

AI Technical Summary

Technical Problem

Existing technologies struggle to achieve the controllable preparation of two-dimensional Mn(InTe2)2 materials with high crystallinity and structural stability, especially in multi-layered systems where issues such as compositional segregation, interlayer disorder, and magnetic order disruption exist.

Method used

A stepwise precursor strategy was adopted. First, MnTe precursor was synthesized and then mixed with In elemental powder and flux KCl in a vertical confinement space under constant normal pressure. Two-dimensional preferential epitaxial growth was induced by fluxing reaction to form two-dimensional Mn(InTe2)2 crystal.

Benefits of technology

The crystal quality and antiferromagnetic ordering properties of two-dimensional Mn(InTe2)2 materials were improved, and highly repeatable and controllable two-dimensional crystal growth was achieved, making it suitable for high-density magnetic storage devices.

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Abstract

The invention discloses a two-dimensional antiferromagnetic material and a preparation method and application thereof, and the method comprises the following steps: adopting Mn and Te elementary substance powder, taking I2 as a transportation agent, and synthesizing a blocky MnTe precursor through a vacuum chemical vapor transport method under a vacuum sealing condition; the preparation method comprises the following steps: mixing a ground MnTe precursor with In elementary substance powder and fluxing agent KCl powder, carrying out fluxing reaction in a vertical confinement space constrained by a constant normal pressure and in an inert atmosphere, and inducing the crystal to epitaxially grow along the horizontal direction, thereby forming a two-dimensional Mn (InTe2) 2 crystal on a fluorine crystal mica substrate, and carrying out wet transfer to obtain the two-dimensional Mn (InTe2) 2 crystal on a SiO2 / Si substrate, according to the method, the two-dimensional Mn (InTe2) 2 crystal with the antiferromagnetic characteristic is prepared through a step-by-step precursor induction type confinement pressure melting epitaxial method, and the method is simple in process and high in repeatability; the two-dimensional Mn (InTe2) 2 crystal has the characteristics of good crystal quality, large transverse size, controllable layer number and the like, and can be applied to a high-density magnetic storage device.
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