Display panel, preparation method thereof and display device

Abstract

The application provides a display panel and a preparation method thereof and a display device. The display panel comprises a bearing substrate, a pixel definition layer and a color conversion layer. The pixel definition layer is provided with scattering particles. The pixel definition layer is arranged on one side of the bearing substrate and is arranged in an array to form a plurality of opening areas. The color conversion layer comprises a plurality of color conversion parts. The color conversion parts are arranged on one side of the bearing substrate and are arranged in the opening areas. The size of the pixel definition layer at the end far from the bearing substrate is greater than the size of the pixel definition layer at the end close to the bearing substrate. The pixel definition layer forms an inverted trapezoidal structure with a width decreasing from top to bottom. The inclined side wall of the inverted trapezoidal structure corresponds to a light blocking barrier. The light rays with a large angle are blocked by the inclined side wall, so that the light rays can be prevented from entering adjacent pixels. The display panel can be prevented from having the phenomena of light crosstalk, mixed light, color deviation at a large viewing angle and the like, and the display effect of the display panel is improved.

Description

Technical Field

[0001] This application relates to the field of display technology, specifically to a display panel and its manufacturing method, and a display device. Background Technology

[0002] In related technologies, large-angle light emitted by the backlight module can easily overflow from the pixel gaps of the display panel, causing serious light crosstalk and light mixing, which affects the display effect of the display panel. Summary of the Invention

[0003] The purpose of this application is to provide a display panel and its manufacturing method and display device to solve the technical problem that large-angle light emitted by the backlight module can easily overflow from the pixel gaps of the display panel, causing serious light crosstalk and light mixing, which affects the display effect of the display panel.

[0004] In a first aspect, this application provides a display panel, including:

[0005] substrate;

[0006] A pixel defining layer, wherein scattering particles are disposed within the pixel defining layer, the pixel defining layer is disposed on one side of the carrier substrate, and the pixel defining layer array is arranged to form multiple opening regions; and

[0007] A color conversion layer includes multiple color conversion sections, the color conversion sections being disposed on one side of the carrier substrate, and the color conversion layer being disposed within the opening area;

[0008] Wherein, the dimension of the pixel defining layer at the end away from the carrier substrate is larger than the dimension at the end closer to the carrier substrate, so that the pixel defining layer is inclined in a first direction along the direction close to the center of the opening area, and the cross-sectional shape of the pixel defining layer is an inverted trapezoid, and the first direction is the setting direction of the carrier substrate and the pixel defining layer.

[0009] In the display panel provided in this application, a pixel defining layer contains scattering particles. The pixel defining layer is disposed on one side of a carrier substrate, and an array of pixel defining layers is arranged to form multiple opening areas. The color conversion layer includes multiple color conversion units, which are disposed on one side of the carrier substrate, and the color conversion layer is disposed within the opening areas. The dimension of the pixel defining layer at the end furthest from the carrier substrate is larger than the dimension at the end closest to the carrier substrate, so that the pixel defining layer is tilted in a first direction near the center of the opening area. The cross-sectional shape of the pixel defining layer is an inverted trapezoid, and the first direction is the orientation of the carrier substrate and the pixel defining layer. The pixel defining layer forms an inverted trapezoidal structure that is wider at the top and narrower at the bottom. The tilted sidewalls of the inverted trapezoid act as light-blocking barriers, blocking large-angle light rays and preventing light from entering adjacent pixels. This significantly reduces light crosstalk, light mixing, and color shift at large viewing angles, thereby improving the display effect of the display panel. Furthermore, the scattering particles have high reflectivity, reflecting light that strikes the sidewalls of the pixel defining layer back into the opening areas, preventing light leakage to adjacent pixels, further reducing crosstalk and improving the display effect of the display panel.

[0010] The display panel further includes a shielding layer, which is disposed on the pixel defining layer and on the side of the pixel defining layer away from the carrier substrate. The surface of the shielding layer facing the opening area is an inclined surface, and the inclined surface is set at an angle to the first direction.

[0011] The color conversion layer includes a quantum dot layer or a color resist layer.

[0012] The display panel further includes:

[0013] A first polarization layer is disposed on the side of the color conversion layer away from the carrier substrate, and the first polarization layer covers the color conversion layer and the shielding layer;

[0014] A planarization layer is disposed on the side of the first polarization layer away from the carrier substrate;

[0015] An alignment layer is disposed on the side of the planarization layer opposite to the carrier substrate;

[0016] A liquid crystal layer, wherein the liquid crystal layer is disposed on the side of the alignment layer opposite to the carrier substrate;

[0017] An array substrate, wherein the array substrate is disposed on the side of the liquid crystal layer opposite to the carrier substrate;

[0018] A second polarization layer is disposed on the side of the array substrate away from the carrier substrate, wherein the polarization direction of the second polarization layer is perpendicular to the polarization direction of the first polarization layer.

[0019] Secondly, this application provides a method for manufacturing a display panel, the method comprising:

[0020] Provide a substrate;

[0021] A pixel defining layer is formed on the carrier substrate, wherein scattering particles are provided in the pixel defining layer, the pixel defining layer is arrayed and forms a plurality of opening regions, the size of the end of the pixel defining layer away from the carrier substrate is larger than the size of the end closer to the carrier substrate, so that the pixel defining layer is inclined in a first direction along the direction close to the center of the opening region, the cross-sectional shape of the pixel defining layer is an inverted trapezoid, and the first direction is the setting direction of the carrier substrate and the pixel defining layer;

[0022] A color conversion layer is formed on the carrier substrate, wherein the color conversion layer includes a plurality of color conversion portions, the color conversion portions are disposed on one side of the carrier substrate, and the color conversion layer is disposed within the opening area.

[0023] The step of forming a pixel defining layer on the carrier substrate includes:

[0024] A first photoresist is applied, wherein the first photoresist includes a negative photoresist and contains scattering particles;

[0025] The first photoresist is baked and exposed, wherein the first photoresist contains scattering particles so that the exposure dose of the first photoresist near the light source is greater than the exposure dose of the part far from the light source.

[0026] The first photoresist is etched using a first solution, wherein the mass percentage of tetramethylammonium hydroxide in the first solution ranges from 0.3 wt% to 0.5 wt%.

[0027] The etched first photoresist is baked to form the pixel defining layer with an inverted trapezoidal cross-sectional shape.

[0028] The color conversion layer includes a quantum dot layer, and the formation of the color conversion layer on the carrier substrate includes:

[0029] Inkjet printing of raw material layers;

[0030] The raw material layer is placed in a vacuum environment for degassing;

[0031] The raw material layer is photocrosslinked by irradiating it with UV light;

[0032] The raw material layer is baked to form the color conversion layer.

[0033] The color conversion layer includes a color resist layer, which comprises a first color resist, a second color resist, and a third color resist. The formation of the color conversion layer on the carrier substrate includes:

[0034] A first color resist material layer is coated, and the first color resist material layer is exposed, developed, and etched to form the first color resist.

[0035] A second color resist material layer is coated, and the second color resist material layer is exposed, developed, and etched to form the second color resist.

[0036] A third color resist material layer is coated, and the third color resist material layer is exposed, developed, and etched to form the third color resist.

[0037] The preparation method further includes forming a shielding layer on the pixel defining layer, wherein the surface of the shielding layer facing the opening area is an inclined surface, and the inclined surface is set at an angle to the first direction;

[0038] A shielding layer is formed on the pixel defining layer, including:

[0039] A second photoresist is applied, wherein the second photoresist includes a positive photoresist;

[0040] The second photoresist is baked and exposed;

[0041] The second photoresist is etched using a second solution, wherein the mass percentage of tetramethylammonium hydroxide in the second solution ranges from 2wt% to 3wt%.

[0042] The second photoresist was ashed using oxygen.

[0043] The etched second photoresist is baked to form the shielding layer.

[0044] The method for manufacturing the display panel further includes:

[0045] A first polarization layer is formed, wherein the first polarization layer is disposed on the side of the color conversion layer away from the carrier substrate, and the first polarization layer covers the color conversion layer and the shielding layer;

[0046] A planarization layer is formed on the side of the first polarization layer opposite to the carrier substrate;

[0047] An alignment layer is formed on the side of the planarization layer opposite to the carrier substrate;

[0048] A liquid crystal layer is formed, wherein the liquid crystal layer is disposed on the side of the alignment layer opposite to the carrier substrate;

[0049] An array substrate is provided for cell assembly, the array substrate being disposed on the side of the liquid crystal layer opposite to the carrier substrate;

[0050] A second polarization layer is provided on the side of the array substrate away from the carrier substrate, wherein the polarization direction of the second polarization layer is perpendicular to the polarization direction of the first polarization layer.

[0051] Thirdly, this application provides a display device, including a backlight module and the aforementioned display panel, wherein the display panel is disposed on the backlight module, the backlight module is used to emit visible light to the display panel, and the display panel is used to receive visible light and form a display image. Attached Figure Description

[0052] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0053] Figure 1 This is a schematic diagram of the structure of a carrier substrate and a pixel defining layer provided in an embodiment of this application;

[0054] Figure 2 This is a schematic diagram of the structure of a carrier substrate, a pixel defining layer, and a shielding layer provided in an embodiment of this application. Figure 1 ;

[0055] Figure 3 This is a schematic diagram of the structure of a carrier substrate, a pixel defining layer, and a shielding layer provided in an embodiment of this application. Figure 2 ;

[0056] Figure 4 This is a schematic diagram of the structure of a display panel provided in an embodiment of this application;

[0057] Figure 5 This is a flowchart of a method for manufacturing a display panel according to an embodiment of this application;

[0058] Figure 6 This is a schematic diagram of the structure of the substrate being processed in a preparation method provided in this application.

[0059] Figure 7 This is a flowchart of step S300 in a preparation method provided by an embodiment of this application;

[0060] Figure 8 This is a structural schematic diagram of a display panel corresponding to step S300 provided in an embodiment of this application;

[0061] Figure 9 This is the process included in step S500 of a preparation method provided in this application. Figure 1 ;

[0062] Figure 10 This is a structural diagram of step S500 corresponding to a display panel provided in an embodiment of this application. Figure 1 ;

[0063] Figure 11 This is the process included in step S500 of a preparation method provided in this application. Figure 2 ;

[0064] Figure 12 This is a structural diagram of step S500 corresponding to a display panel provided in an embodiment of this application. Figure 2 ;

[0065] Figure 13 This is a flowchart of step S600 in a preparation method provided by an embodiment of this application;

[0066] Figure 14 This is a flowchart of step S600 in a preparation method provided by an embodiment of this application;

[0067] Figure 15 This is a structural diagram of step S600 corresponding to a display panel provided in an embodiment of this application. Figure 1 ;

[0068] Figure 16 This is a structural diagram of step S600 corresponding to a display panel provided in an embodiment of this application. Figure 2 ;

[0069] Figure 17 This is a flowchart of step S700 in a preparation method provided by an embodiment of this application;

[0070] Figure 18 This is a structural schematic diagram of a display panel corresponding to step S700 provided in an embodiment of this application;

[0071] Figure 19 This is a flowchart of steps S810-S860 in a preparation method provided by an embodiment of this application;

[0072] Figure 20 This is a structural schematic diagram of a display panel corresponding to step S810 provided in an embodiment of this application;

[0073] Figure 21 This is a structural schematic diagram of a display panel corresponding to step S820 provided in an embodiment of this application;

[0074] Figure 22 This is a structural schematic diagram of a display panel corresponding to step S830 provided in an embodiment of this application;

[0075] Figure 23 This is a schematic diagram of the structure of a display device provided in an embodiment of this application.

[0076] Label Explanation:

[0077] Display device 1000, display panel 100, carrier substrate 10, pixel defining layer 20, color conversion layer 30, shielding layer 40, protective layer 51, first polarizing layer 52, planarization layer 53, alignment layer 54, liquid crystal layer 55, array substrate 56, second polarizing layer 57, first direction D1, backlight module 200. Detailed Implementation

[0078] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0079] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion.

[0080] In this specification, for convenience, terms such as "middle," "upper," "lower," "front," "rear," "vertical," "horizontal," "top," "bottom," "inner," and "outer" are used to indicate orientation or positional relationships in conjunction with the accompanying drawings. This is solely for the purpose of facilitating the description and simplification, and does not imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation of this disclosure. The positional relationships of the constituent elements may be appropriately varied depending on the orientation of the constituent elements being described. Therefore, the use of terms not limited to those described in the specification may be appropriately replaced as needed.

[0081] In this specification, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joint" shall be interpreted broadly. For example, they may refer to a fixed connection, a detachable connection, or an integral connection; a mechanical connection or an electrical connection; a direct connection or an indirect connection via an intermediate component, or a connection within two components. Those skilled in the art will understand the meaning of these terms in this disclosure as appropriate.

[0082] In related technologies, large-angle light emitted by the backlight module can easily overflow from the pixel gaps of the display panel, causing serious light crosstalk and light mixing, which affects the display effect of the display panel.

[0083] Please refer to Figure 1 This application provides a display panel 100 to solve the technical problem that large-angle light emitted by the backlight module can easily overflow from the pixel gaps of the display panel, causing serious light crosstalk and light mixing, which affects the display effect of the display panel.

[0084] It should be noted that the accompanying drawings in this application use a single pixel interval cross-section as an example for illustration and should not be construed as a limitation of this application. The single pixel interval includes the corresponding red sub-pixel, blue sub-pixel, and green sub-pixel.

[0085] The display panel 100 includes a carrier substrate 10, a pixel defining layer 20, and a color conversion layer 30. The pixel defining layer 20 contains scattering particles and is disposed on one side of the carrier substrate 10, with an array of pixel defining layers 20 forming multiple opening regions. The color conversion layer 30 includes multiple color conversion sections, which are disposed on one side of the carrier substrate 10, and the color conversion layer 30 is disposed within the opening regions. The dimension of the pixel defining layer 20 at the end furthest from the carrier substrate 10 is larger than the dimension at the end closest to the carrier substrate 10, so that the pixel defining layer 20 is inclined in a first direction D1 towards the center of the opening region. The cross-sectional shape of the pixel defining layer 20 is an inverted trapezoid, and the first direction D1 is the orientation of the carrier substrate 10 and the pixel defining layer 20.

[0086] The display panel 100 includes the carrier substrate 10, which provides a stable carrier platform for the color conversion layer 30, the pixel defining layer 20, and other film layers, ensuring the adhesion of subsequent film layers. Optionally, in this embodiment, the carrier substrate 10 is glass. In other embodiments, the carrier substrate 10 may be made of other light-transmitting materials, and this application does not impose any restrictions on this.

[0087] The display panel 100 further includes the pixel defining layer 20. The size of the pixel defining layer 20 at the end away from the carrier substrate 10 is larger than the size at the end close to the carrier substrate 10. Furthermore, the pixel defining layer 20 forms an inverted trapezoidal structure that is wider at the top and narrower at the bottom, and the sidewalls of the pixel defining layer 20 are inclined toward the center of the opening area.

[0088] The pixel defining layer 20 is inclined in the first direction D1 towards the center of the opening area. That is, the sidewall of the pixel defining layer 20 is not perpendicular to the carrier substrate 10, but rather inclined towards the center of the opening area along the first direction D1, forming a wraparound sidewall for the opening area. Here, the first direction D1 is the orientation of the carrier substrate 10 and the pixel defining layer 20, i.e., a direction perpendicular to the carrier substrate 10 and upwards. Figure 1 As shown.

[0089] In related technologies, the conventional pixel boundary layer 20 is a rectangular structure with the same size at the top and bottom and vertical sidewalls. Visible light can easily overflow from the gap between the sidewalls and the color conversion layer 30 and enter the opening area of ​​adjacent pixels, causing the color light of different color conversion parts to mix, such as crosstalk between red and green light, resulting in phenomena such as light crosstalk and color shift at large viewing angles.

[0090] In the pixel defining layer 20 of this application, the inverted trapezoidal inclined sidewalls are equivalent to light-blocking barriers. Large-angle light rays are blocked by the inclined sidewalls, preventing light rays from entering adjacent pixels. This can significantly reduce light crosstalk, light mixing, and color shift at large viewing angles in the display panel 100, thereby improving the display effect of the display panel 100.

[0091] Furthermore, in this embodiment, the sidewall of the pixel defining layer 20 and the carrier substrate 10 are arranged at an angle, with the angle facing the side of the opening area. The degree range of the angle is 40°-70°. Optionally, the degree of the angle can be 40°, 42°, 45°, 48°, 50°, 51°, 53°, 55°, 57°, 60°, 62°, 64°, 65°, 66°, 68°, 69°, 70°, or other degrees between 40° and 70°. This application does not limit this.

[0092] The pixel defining layer 20 has an inverted trapezoidal cross-sectional shape. Specifically, in this embodiment, the upper surface width of the pixel defining layer 20 is 6 μm. Optionally, the upper surface width of the pixel defining layer 20 can also be other dimensions ranging from 5 μm to 7 μm, and this application does not impose any limitations on this. Furthermore, the lower surface width of the pixel defining layer 20 is 4 μm. Optionally, the upper surface width of the pixel defining layer 20 can also be other dimensions ranging from 3 μm to 5 μm, and this application does not impose any limitations on this.

[0093] The pixel defining layer 20 contains scattering particles, and the scattering particles include, but are not limited to, titanium dioxide (TiO2) or other particles with reflective materials. The application does not impose any restrictions on this.

[0094] In the display panel 100 provided in this application, the pixel defining layer 20 is provided with scattering particles. The pixel defining layer 20 is disposed on one side of the carrier substrate 10, and the pixel defining layer 20 is arrayed to form multiple opening areas. The color conversion layer 30 includes multiple color conversion parts, the color conversion parts are disposed on one side of the carrier substrate 10, and the color conversion layer 30 is disposed in the opening area. The size of the pixel defining layer 20 at the end away from the carrier substrate 10 is larger than the size at the end closer to the carrier substrate 10, so that the pixel defining layer 20 is inclined in the first direction D1 along the direction close to the center of the opening area. The cross-sectional shape of the pixel defining layer 20 is an inverted trapezoid. The first direction D1 is the setting direction of the carrier substrate 10 and the pixel defining layer 20. The pixel defining layer 20 forms an inverted trapezoidal structure that is wider at the top and narrower at the bottom. The inclined sidewalls of the inverted trapezoid act as light-blocking barriers, blocking large-angle light rays and preventing light from entering adjacent pixels. This significantly reduces light crosstalk, light mixing, and color shift at large viewing angles in the display panel 100, thereby improving the display effect of the display panel 100. Furthermore, the scattering particles have high reflectivity, reflecting the light that hits the sidewalls of the pixel defining layer 20 back into the opening area, preventing light leakage to adjacent pixels, further reducing crosstalk and improving the display effect of the display panel 100.

[0095] The color conversion layer 30 includes a quantum dot layer or a color resist layer.

[0096] In one embodiment, the color conversion layer 30 includes a quantum dot layer. This quantum dot layer needs to absorb blue laser light to convert it into the target color. If unabsorbed light escapes directly, it will cause light loss. In the display panel 100 of this application, the pixel defining layer 20 contains scattering particles. Some of the large-angle excitation blue light will illuminate the sidewalls of the pixel defining layer 20. Since the pixel defining layer 20 is an inverted trapezoid and has high reflectivity, this blue light will be reflected back to the quantum dot layer, significantly improving the conversion efficiency from blue light to red and green light, directly enhancing the brightness and color saturation of the pixels.

[0097] Furthermore, in this embodiment, the quantum dot layer includes a red quantum dot layer and a green quantum dot layer.

[0098] Furthermore, in this embodiment, the color conversion layer 30 further includes a scattering layer, which is disposed in the same layer as the quantum dot layer, and the scattering layer is used to transmit blue light.

[0099] In one embodiment, the color conversion layer 30 may further include a color resist layer, and the color resist layer includes red color resist, green color resist and blue color resist, which is not limited in this application.

[0100] Please refer to Figure 2 and Figure 3 In one embodiment, the display panel 100 further includes a shielding layer 40, which is disposed on the pixel defining layer 20 and on the side of the pixel defining layer 20 away from the carrier substrate 10. The surface of the shielding layer 40 facing the opening area is an inclined surface, and the inclined surface is set at an angle to the first direction D1.

[0101] The shielding layer 40 is a black matrix (BM) made of a material with strong light-blocking properties, and the shielding layer 40 can absorb stray light.

[0102] The shielding layer 40 is disposed on the pixel defining layer 20 and on the side away from the carrier substrate 10, that is, the shielding layer 40 is above the pixel defining layer 20. The array structure of the shielding layer 40 matches the array structure of the pixel defining layer 20 and is arranged in a grid pattern. That is, the shielding layer 40 is disposed around each of the opening areas, forming a structure in which each of the opening areas is surrounded by the inclined surface of the shielding layer 40.

[0103] The surface of the shielding layer 40 facing the opening area is an inclined surface, which is the side wall of the shielding layer 40 near the opening area, and this side wall is an inclined surface.

[0104] It should be noted that although setting only the inverted trapezoidal sidewall of the pixel defining layer 20 can block most of the light overflowing from the lower part of the opening area, some large-angle light close to the top edge of the pixel defining layer 20 may overflow from the gap between the top of the pixel defining layer 20 and the subsequent film layer and enter the adjacent pixel, causing upper light crosstalk.

[0105] The shielding layer 40 is disposed above the pixel defining layer 20. Its surface, which is inclined towards the opening area, is equivalent to adding an inclined baffle to the upper edge of the opening area. When large-angle light tries to overflow from the upper part of the opening area, it will be directly blocked by the inclined surface and cannot pass through the shielding layer 40 to enter the adjacent pixel, thereby further reducing the crosstalk phenomenon of the pixel panel. In addition, the inclined surface of the shielding layer 40 will not block the normal light output of the opening area, but only blocks stray light that overflows at an angle.

[0106] Furthermore, it should be noted that this application does not limit the structure of the shielding layer 40, such as... Figure 2 As shown, in one embodiment, the shielding layer 40 can be a trapezoidal structure.

[0107] The shielding layer 40 can have a trapezoidal structure. Specifically, in this embodiment, the upper surface width of the shielding layer 40 is 4.5 μm. Optionally, the upper surface width of the shielding layer 40 can also be other dimensions of 4 μm-5 μm, which is not limited in this application. Furthermore, the lower surface width of the shielding layer 40 is 6 μm. Optionally, the upper surface width of the pixel defining layer 20 can also be other dimensions of 5 μm-7 μm, which is not limited in this application.

[0108] like Figure 3 As shown, in one embodiment, the structure of the shielding layer 40 can also be an inverted trapezoidal structure. All of the above are embodiments of this application and should not be construed as limitations on this application.

[0109] Please refer to Figure 4 In one embodiment, the display panel 100 further includes a first polarization layer 52, which is disposed on the side of the color conversion layer 30 away from the carrier substrate 10, and covers the color conversion layer 30 and the shielding layer 40.

[0110] Traditional LCDs use externally mounted polarizers, which are prone to surface damage, moisture absorption and fading, warping and light leakage. The first polarizing layer 52 in this application is built-in and protected by the upper structure (described in detail later) and the lower structure, completely isolating it from the external environment, which can significantly improve the storage and lifespan of the display panel 100;

[0111] Furthermore, the first polarization layer 52 provides full coverage, which can prevent stray light leakage caused by local unpolarized areas and improve the overall contrast of the image.

[0112] In one embodiment, the display panel 100 further includes a planarization layer 53 disposed on the side of the first polarization layer 52 away from the carrier substrate 10.

[0113] The structures beneath the first polarizing layer 52 (the color conversion layer 30 and the shielding layer 40) have unevenness, which makes it easy for steps to form on the surface of the first polarizing layer 52, i.e., unevenness. The planarization layer 53 smooths out these steps through the flow and filling properties of the photoresist, forming a mirror-smooth substrate, providing uniform support for the subsequent layer structure fabrication.

[0114] In one embodiment, the display panel 100 further includes an alignment layer 54 and a liquid crystal layer 55. The alignment layer 54 is disposed on the side of the planarization layer 53 opposite to the carrier substrate 10, and the liquid crystal layer 55 is disposed on the side of the alignment layer 54 opposite to the carrier substrate 10.

[0115] The alignment layer 54 can be used to guide the initial alignment direction of liquid crystal molecules, ensuring that the initial alignment of liquid crystal molecules in all pixels is consistent, and avoiding problems such as color distortion, ghosting, and decreased contrast caused by molecular disorder.

[0116] In one embodiment, the display panel 100 further includes an array substrate 56 disposed on the side of the liquid crystal layer 55 opposite to the carrier substrate 10.

[0117] In one embodiment, the display panel 100 further includes a second polarization layer 57, which is disposed on the side of the array substrate 56 away from the carrier substrate 10, wherein the polarization direction of the second polarization layer 57 is perpendicular to the polarization direction of the first polarization layer 52.

[0118] In the initial state, the liquid crystal molecules of the liquid crystal layer 55 are arranged in an orderly manner along the trench direction of the alignment layer 54, which rotates the polarization direction of the unidirectional polarized light transmitted from the first polarization layer 52 by 90°. In the energized state, after an electric field is applied to the electrodes of the array substrate 56, the liquid crystal molecules will rearrange along the direction of the electric field and lose the ability to rotate the polarization direction; the rotated polarized light can pass through the second polarization layer 57 to form a bright state; the unrotated polarized light is blocked by the second polarization layer 57 to form a dark state. By controlling the on / off state of each pixel, image formation is achieved.

[0119] In one embodiment, the second polarizing layer 57 can be a conventional PVA-type polarizer, attached to the surface of the array substrate 56.

[0120] In one embodiment, the second polarization layer 57 can be a metal gate polarization layer, i.e., a metal line etched on the outside of the glass, integrated into the array substrate 56, which can avoid external bonding defects and improve the storage performance and lifespan of the display panel 100.

[0121] Please refer to Figure 5 This application also provides a method for manufacturing a display panel 100, which is used to manufacture the display panel 100. The method for manufacturing the display panel 100 includes steps S100, S300 and S500, and a detailed description of steps S100, S300 and S500 is as follows.

[0122] Step S100: Provide a carrier substrate 10.

[0123] The thickness of the carrier substrate 10 ranges from 450μm to 550μm. The thickness of the carrier substrate 10 can be 450μm, or 460μm, 470μm, 480μm, 490μm, 500μm, 510μm, 520μm, 530μm, 540μm, 550μm, or other values ​​within the range of 450μm to 550μm. This application does not impose any restrictions on this.

[0124] Please refer to Figure 6 The provision of the carrier substrate 10 in step S100 includes cleaning the surface of the carrier substrate 10 with ultrasound and brushing for 5 min-7 min, and then cleaning it with plasma argon or oxygen so that the contact angle of the carrier substrate 10 is less than 5°.

[0125] Step S300: A pixel defining layer 20 is formed on the carrier substrate 10, wherein the pixel defining layer 20 contains scattering particles, the pixel defining layer 20 is arrayed and forms multiple opening regions, the size of the end of the pixel defining layer 20 away from the carrier substrate 10 is larger than the size of the end closer to the carrier substrate 10, so that the pixel defining layer 20 is tilted in the first direction D1 along the direction close to the center of the opening region, the cross-sectional shape of the pixel defining layer 20 is an inverted trapezoid, and the first direction D1 is the setting direction of the carrier substrate 10 and the pixel defining layer 20.

[0126] Please refer to Figure 7 and Figure 8 Step S300 includes steps S310, S320, S330 and S340. The detailed description of steps S310, S320, S330 and S340 is as follows.

[0127] S310: Coating a first photoresist, wherein the first photoresist includes a negative photoresist and contains scattering particles.

[0128] In one embodiment, the first photoresist is applied using a slot coating process. In this embodiment, the coating thickness of the first photoresist ranges from 1.5µm to 2.5µm. Optionally, the coating thickness of the first photoresist can be 1.5µm, 1.6µm, 1.7µm, 1.8µm, 1.9µm, 2µm, 2.1µm, 2.2µm, 2.3µm, 2.4µm, 2.5µm, or other values ​​within the range of 1.5µm to 2.5µm. This application does not impose any limitations on this.

[0129] The first photoresist contains scattering particles, and the scattering particles include, but are not limited to, titanium dioxide (TiO2) or other particles with reflective materials. The application does not impose any restrictions on this.

[0130] In this embodiment, the mass percentage of the scattering particles in the first photoresist ranges from 20wt% to 25wt%. Optionally, the mass percentage of the scattering particles in the first photoresist can be 20wt%, 21wt%, 22wt%, 23wt%, 24wt%, 25wt%, or other values ​​within the range of 20wt% to 25wt%. This application does not impose any limitations on this.

[0131] In this embodiment, the first photoresist is of the type TOK BKR-7300B-HT, which should not be construed as a limitation of this application.

[0132] S320: The first photoresist is baked and exposed, wherein the first photoresist contains scattering particles so that the exposure dose of the first photoresist near the light source is greater than the exposure dose of the part far from the light source.

[0133] The first photoresist is baked, specifically at 100°C for 90 seconds. Optionally, the baking temperature can be 100°C or other temperatures between 90°C and 110°C, and the baking time can be 90 seconds or other times between 85 seconds and 95 seconds; this application does not impose any limitations on these.

[0134] Further, the baked first photoresist is exposed. Specifically, a photomask is used to expose the first photoresist, wherein the shape of the photomask is set according to the metal gate lines of the array substrate 56 or the lines of the shielding layer 40, and the light energy for exposure is 50 mJ / cm². 2 The wavelength is 365nm.

[0135] S330: The first photoresist is etched using a first solution, wherein the mass percentage of tetramethylammonium hydroxide in the first solution ranges from 0.3wt% to 0.5wt%.

[0136] The first photoresist is etched using the first solution, and the etching time can be 30s or other times within 25s-35s. This application does not limit this time.

[0137] The mass percentage of tetramethylammonium hydroxide (TMAH) in the first solution ranges from 0.3wt% to 0.5wt%. Optionally, the mass percentage of tetramethylammonium hydroxide (TMAH) in the first solution can be 0.3wt%, 0.4wt%, 0.5wt%, or other values ​​within the range of 0.3wt% to 0.5wt%, and this application does not limit this.

[0138] S340: The etched first photoresist is baked to form the pixel defining layer 20 with an inverted trapezoidal cross-sectional shape.

[0139] The etched first photoresist is baked, specifically at 230°C for 30 minutes. Optionally, the baking temperature can be 230°C or other temperatures between 200°C and 240°C, and the baking time can be 30 minutes or other times between 25 minutes and 35 minutes; this application does not impose any limitations on these.

[0140] It should be noted that the first photoresist contains scattering particles, which can enhance light scattering and absorption. This results in a higher exposure dose on the upper surface (closer to the light source) and a lower exposure dose on the lower surface (farther from the light source) during the exposure process, forming a certain crosslinking gradient (higher crosslinking degree at the top and lower crosslinking degree at the bottom). The difference in the crosslinking gradient provides a basis for the etching difference in the development stage. The swelling effect of tetramethylammonium hydroxide in the first solution is considered a useful tool in the new process. Isotropic etching combined with the crosslinking gradient makes the bottom etching faster and the side etching more, forming the inverted trapezoidal pixel defining layer 20.

[0141] Please refer to Figure 9 and Figure 10 .

[0142] S500: A color conversion layer 30 is formed on the carrier substrate 10, wherein the color conversion layer 30 includes a plurality of color conversion portions, the color conversion portions are disposed on one side of the carrier substrate 10, and the color conversion layer 30 is disposed within the opening area.

[0143] In one embodiment, the color conversion layer 30 includes a quantum dot layer. Step S500, which forms the color conversion layer 30 on the carrier substrate 10, includes steps S510, S520, S530, and S540. A detailed description of steps S510, S520, S530, and S540 is as follows.

[0144] S510: Inkjet printing of raw material layer.

[0145] The raw material layer comprises a quantum dot material layer and a scattering material layer. The quantum dot material layer includes epoxy-grafted ligands containing methacrylic acid and photoinitiators (such as 1.5wt% CdSe-ZnS quantum dot material, 85.4wt% anisole solvent, 8.0wt% aliphatic polyurethane acrylate, 4.0wt% tripropylene glycol diacrylate diluent, 1.0wt% Irgacure 819 photoinitiator, and 0.1wt% BYK-163 dispersant). The scattering material layer includes a negative ink containing 10wt% TiO2 (such as 10wt% rutile nano-TiO2, 12wt% epoxy acrylate, 6wt% trimethylolpropane triacrylate diluent, 70.5wt% diethylene glycol butyl ether acetate solvent, 1.0wt% Irgacure 819 photoinitiator, and 0.5wt% BYK-2150 dispersant).

[0146] The raw material layer is filled into the opening area in the order of R / G / B using a precision inkjet printing device (such as Fujifilm Dimatix DMP-2850 or equivalent device) at 35°C and in an N2 atmosphere to form a film layer with a thickness of 1.5 μm.

[0147] S520: The raw material layer is placed in a vacuum environment for degassing.

[0148] Specifically, degassing was performed under a vacuum of 20 kPa for 30 seconds.

[0149] S530: Photocrosslinking is performed by irradiating the raw material layer with UV light.

[0150] Specifically, preliminary cross-linking is carried out under UV light, wherein the energy of the UV light is 40 mJ / cm². 2 -60mJ / cm 2 The wavelength is 365nm.

[0151] S540: The raw material layer is baked to form the color conversion layer 30.

[0152] Specifically, the product is baked at 120°C in a N2 atmosphere for 20 minutes. The baking temperature can be 120°C or other temperatures between 110°C and 130°C, and the baking time can be 20 minutes or other times between 15 minutes and 25 minutes. This application does not limit the baking time in this regard.

[0153] In the method for manufacturing the display panel 100 provided in this application, a carrier substrate 10 is provided, and a pixel defining layer 20 is formed on the carrier substrate 10. The pixel defining layer 20 contains scattering particles, and the pixel defining layer 20 is arrayed to form multiple opening regions. The size of the end of the pixel defining layer 20 away from the carrier substrate 10 is larger than the size of the end closer to the carrier substrate 10, so that the pixel defining layer 20 is inclined in a direction close to the center of the opening region in a first direction D1. The cross-sectional shape of the pixel defining layer 20 is an inverted trapezoid. The first direction D1 is the setting direction of the carrier substrate 10 and the pixel defining layer 20. A color conversion layer 30 is formed on the carrier substrate 10, wherein the color conversion layer 30 includes multiple color conversion parts, the color conversion parts are disposed on one side of the carrier substrate 10, and the color conversion layer 30 is disposed within the opening region. The pixel defining layer 20 forms an inverted trapezoidal structure that is wider at the top and narrower at the bottom. The inclined sidewalls of the inverted trapezoid act as light-blocking barriers, blocking large-angle light rays and preventing light from entering adjacent pixels. This significantly reduces light crosstalk, light mixing, and color shift at large viewing angles in the display panel 100, thereby improving the display effect of the display panel 100. Furthermore, the scattering particles have high reflectivity, reflecting the light that hits the sidewalls of the pixel defining layer 20 back into the opening area, preventing light leakage to adjacent pixels, further reducing crosstalk and improving the display effect of the display panel 100.

[0154] Please refer to Figure 11 and Figure 12 In one embodiment, the color conversion layer 30 includes a color resist layer, which includes a first color resist, a second color resist, and a third color resist. Step S500, which forms the color conversion layer 30 on the carrier substrate 10, includes steps S550, S560, and S570. A detailed description of steps S550, S560, and S570 is as follows.

[0155] S550: Coating a first color resist material layer, exposing, developing, and etching the first color resist material layer to form the first color resist.

[0156] S560: Coat the second color resist material layer, and expose, develop, and etch the second color resist material layer to form the second color resist.

[0157] S570: Coating a third color resist material layer, exposing, developing, and etching the third color resist material layer to form the third color resist.

[0158] Please refer to Figures 13 to 16 In one embodiment, the preparation method further includes step S600, which is described in detail below.

[0159] S600: A shielding layer 40 is formed on the pixel defining layer 20, wherein the surface of the shielding layer 40 facing the opening area is an inclined surface, and the inclined surface is set at an angle to the first direction D1.

[0160] Further, step S600, which forms a shielding layer 40 on the pixel defining layer 20, includes steps S610, S620, S630, S640, and S650. A detailed description of steps S610, S620, S630, S640, and S650 is as follows.

[0161] S610: Apply a second photoresist, wherein the second photoresist includes a positive photoresist.

[0162] In one embodiment, the second photoresist is applied using a slot coating process. In this embodiment, the coating thickness of the second photoresist ranges from 0.8 μm to 2 μm. Optionally, the coating thickness of the first photoresist can be 0.8 μm, 0.9 μm, 1 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, 1.5 μm, 1.6 μm, 1.7 μm, 1.8 μm, 1.9 μm, 2 μm, or other values ​​within the range of 0.8 μm to 2 μm. This application does not impose any limitations on these values.

[0163] In this embodiment, the second photoresist is Fujifilm OP-835, which should not be construed as a limitation of this application.

[0164] S620: The second photoresist is baked and exposed.

[0165] The second photoresist is baked, specifically at 90°C for 60 seconds. Optionally, the baking temperature can be 90°C or other temperatures between 80°C and 100°C, and the baking time can be 60 seconds or other times between 55 seconds and 65 seconds; this application does not impose any limitations on these aspects.

[0166] S630: The second photoresist is etched using a second solution, wherein the mass percentage of tetramethylammonium hydroxide in the second solution ranges from 2wt% to 3wt%.

[0167] The first photoresist is etched using a second solution. The etching time can be 60s or other times between 55s and 65s, and this application does not limit it.

[0168] The mass percentage of tetramethylammonium hydroxide (TMAH) in the second solution ranges from 2wt% to 3wt%. Optionally, the mass percentage of tetramethylammonium hydroxide (TMAH) in the second solution can be 2.1wt%, or 2.2wt%, or 2.3wt%, or 2.4wt%, or 2.5wt%, or 2.6wt%, or 2.7wt%, or 2.8wt%, or 2.9wt%, or 3wt%, or other values ​​within the range of 2wt% to 3wt%. This application does not impose any restrictions on this.

[0169] S640: The second photoresist is ashed using oxygen.

[0170] The second photoresist is ashed using oxygen to remove photoresist residue from the portion of the pixel defining layer 20 that is blocked.

[0171] Further, the oxygen flow rate ranges from 50 sccm to 1000 sccm. Optionally, the oxygen flow rate can be 50 sccm, 80 sccm, 100 sccm, 200 sccm, 300 sccm, 400 sccm, 500 sccm, 600 sccm, 700 sccm, 800 sccm, 900 sccm, or 1000 sccm, or other values ​​within the range of 50 sccm to 1000 sccm. This application does not impose any restrictions on this.

[0172] Furthermore, in this embodiment, the ashing process can be 60 seconds or other times within the range of 55 seconds to 65 seconds, and this application does not impose any restrictions on this.

[0173] S650: The etched second photoresist is baked to form the shielding layer 40.

[0174] The second photoresist is baked at 120°C for 20 minutes. Optionally, the baking temperature can be 120°C or other temperatures between 110°C and 130°C, and the baking time can be 20 minutes or other times between 15 minutes and 25 minutes; this application does not impose any limitations on these. It should be noted that during baking, the photoresist flows after being heated, and the top material shrinks towards the center, naturally forming a trapezoidal shape. The shielding layer 40, forming an inverted trapezoidal structure, can be prepared using the same method as the pixel defining layer 20; this application does not impose any limitations on this.

[0175] Please refer to Figure 17 and Figure 18 In one embodiment, the preparation method further includes step S700, which is described in detail below.

[0176] S700: A protective layer 51 is formed on the color conversion layer 30.

[0177] Specifically, a 0.35µm TSL-1200LTP positive photoresist is first coated onto the slit and baked at 90°C for 60 seconds. The opening area is then exposed using a mask. Next, the first solution is used for etching for 25 seconds to dissolve the photoresist in the opening area. After pretreatment and drying in an N2 atmosphere for 30 seconds, an Al2O3 film with a thickness of 45nm-50nm is deposited on the color conversion layer 30 and the shielding layer 40 at 80°C using existing atomic layer deposition (ALD) equipment. After etching with a second solution and ultrasonic treatment at 40kHz for 60 seconds, the photoresist on the surface of the shielding layer 40 swells and vibrates, causing the entire Al2O3 film to peel off. The Al2O3 film in the opening area remains, forming a protective layer 51.

[0178] The protective layer 51 can be used to protect the color conversion layer 30, preventing the color conversion layer 30 from being corroded by moisture in the external environment and other damage, so as to improve the service life of the display panel 100.

[0179] Please refer to Figures 19 to 22 In one embodiment, the preparation method further includes steps S810, S820, S830, S840, S850 and S860. A detailed description of steps S810, S820, S830, S840, S850 and S860 is as follows.

[0180] S810: Form a first polarization layer 52, wherein the first polarization layer 52 is disposed on the side of the color conversion layer 30 away from the carrier substrate 10, and the first polarization layer 52 covers the color conversion layer 30 and the shielding layer 40.

[0181] Specifically, at 55°C, a photo-oriented polarizing dye (containing cinnamic acid ester side chains and azobissulfonic acid) is used to planarize the opening area by slit coating, resulting in a film with an outer surface thickness of 0.5 μm. The polarizing dye is then irradiated with 295 nm UV linearly polarized light to align it, followed by 200 ms of flash crosslinking using a 405 nm wavelength, and then baked at 120°C for 30 min to form the first polarizing layer 52.

[0182] S820: Forming a planarization layer 53, the planarization layer 53 being disposed on the side of the first polarization layer 52 away from the carrier substrate 10;

[0183] A 1µm thick negative photoresist (such as TOK OFL-120) is spin-coated onto the surface of the first polarizing layer 52, and then 100mJ / cm 2After exposure to energetic light, the surface is baked at 120°C for 30 minutes to obtain the planarization layer 53 with a surface step difference of ≤80nm.

[0184] S830: Form an alignment layer 54, the alignment layer 54 being disposed on the side of the planarization layer 53 opposite to the carrier substrate 10;

[0185] On the planarization layer 53, a 120nm ITO thin film 180 (Ar / O2=1000 / 4 VOL%, 0.35Pa pressure, power density 1.8W / cm²) is sputtered by DC magnetron sputtering at 100°C. Then, a 6.5µm thick film is printed on the surface of the ITO film using a ceramic roller with 8.0cP SE-7492LTP ink. The film is pre-baked at 80°C for 5 minutes and then baked at 120°C under N2 conditions for 30 minutes to obtain an 80nm thick PI film. The film is then rubbed with 0.3mm nylon cloth at a 1.5° angle to form the alignment layer 54.

[0186] S840: Forming a liquid crystal layer 55, wherein the liquid crystal layer 55 is disposed on the side of the alignment layer 54 opposite to the carrier substrate 10;

[0187] S850: Provide an array substrate 56 for cell assembly, the array substrate 56 being disposed on the side of the liquid crystal layer 55 away from the carrier substrate 10;

[0188] S860: A second polarization layer 57 is provided, which is disposed on the side of the array substrate 56 away from the carrier substrate 10, wherein the polarization direction of the second polarization layer 57 is perpendicular to the polarization direction of the first polarization layer 52.

[0189] Please refer to Figure 23 This application provides a display device 1000, which includes a backlight module 200 and a display panel 100. The display panel 100 is disposed on the backlight module 200. The backlight module 200 is used to emit visible light to the display panel 100, and the display panel 100 is used to receive visible light and form a display image.

[0190] It should be noted that if the color conversion layer 30 includes a quantum dot layer, the backlight module 200 can emit blue light. If the color conversion layer 30 includes a color resist layer, the backlight module 200 can emit white light; both of these are embodiments of this application.

[0191] In the display device 1000 provided in this application, the pixel defining layer 20 is provided with scattering particles. The pixel defining layer 20 is disposed on one side of the carrier substrate 10, and the pixel defining layer 20 is arrayed to form a plurality of opening regions. The color conversion layer 30 includes a plurality of color conversion parts. The color conversion parts are disposed on one side of the carrier substrate 10, and the color conversion layer 30 is disposed in the opening regions. The size of the pixel defining layer 20 at the end away from the carrier substrate 10 is larger than the size at the end closer to the carrier substrate 10, so that the pixel defining layer 20 is inclined in the first direction D1 along the direction close to the center of the opening region. The cross-sectional shape of the pixel defining layer 20 is an inverted trapezoid. The first direction D1 is the setting direction of the carrier substrate 10 and the pixel defining layer 20. The pixel defining layer 20 forms an inverted trapezoidal structure that is wider at the top and narrower at the bottom. The inclined sidewalls of the inverted trapezoid act as light-blocking barriers, blocking large-angle light rays and preventing light from entering adjacent pixels. This significantly reduces light crosstalk, light mixing, and color shift at large viewing angles in the display device 1000, thereby improving the display effect of the display device 1000. Furthermore, the scattering particles have high reflectivity, reflecting the light that hits the sidewalls of the pixel defining layer 20 back into the opening area, preventing light leakage to adjacent pixels, further reducing crosstalk and improving the display effect of the display device 1000.

[0192] In this application, the terms "embodiment" and "implementation" mean that a specific feature, structure, or characteristic described in connection with an embodiment can be included in at least one embodiment of this application. The appearance of these phrases in various locations throughout the specification does not necessarily refer to the same embodiment, nor are they independent or alternative embodiments mutually exclusive with other embodiments. Those skilled in the art will understand, explicitly and implicitly, that the embodiments described in this application can be combined with other embodiments. Furthermore, it should be understood that the features, structures, or characteristics described in the various embodiments of this application can be arbitrarily combined to form another embodiment that does not depart from the spirit and scope of the technical solution of this application, provided there is no contradiction between them.

[0193] The above description represents some embodiments of this application. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of this application, and these improvements and modifications are also considered to be within the scope of protection of this application.

Claims

1. A method for manufacturing a display panel, characterized in that, A method for manufacturing a display panel includes: Provide a substrate; A pixel defining layer is formed on the carrier substrate, wherein the pixel defining layer contains scattering particles with a mass percentage of 20wt%-25wt%, the pixel defining layer is arrayed and forms multiple opening regions, the size of the end of the pixel defining layer away from the carrier substrate is larger than the size of the end closer to the carrier substrate, so that the pixel defining layer is inclined in a first direction along the direction close to the center of the opening region, the cross-sectional shape of the pixel defining layer is an inverted trapezoid, the first direction is the setting direction of the carrier substrate and the pixel defining layer, the sidewall of the pixel defining layer and the carrier substrate form an angle of 40°-70°, the angle is towards the side of the opening region; A pixel defining layer is formed on the carrier substrate, including: A first photoresist is applied, comprising a negative photoresist and containing scattering particles; the first photoresist is baked and exposed, wherein the scattering particles are present in the first photoresist to ensure that the exposure dose of the portion of the first photoresist near the light source is greater than the exposure dose of the portion away from the light source, forming a gradient cross-linking structure with high cross-linking degree at the top and low cross-linking degree at the bottom; the first photoresist is etched using a first solution, wherein the mass percentage of tetramethylammonium hydroxide in the first solution ranges from 0.3wt% to 0.5wt%; the etched first photoresist is baked to form the pixel defining layer with an inverted trapezoidal cross-sectional shape; A color conversion layer is formed on the carrier substrate, wherein the color conversion layer includes a plurality of color conversion portions, the color conversion portions are disposed on one side of the carrier substrate, and the color conversion layer is disposed within the opening area.

2. The preparation method according to claim 1, characterized in that, The color conversion layer includes a quantum dot layer, and the formation of the color conversion layer on the carrier substrate includes: Inkjet printing of raw material layers; The raw material layer is placed in a vacuum environment for degassing; The raw material layer is photocrosslinked by irradiating it with UV light; The raw material layer is baked to form the color conversion layer.

3. The preparation method according to claim 1, characterized in that, The color conversion layer includes a color resist layer, which includes a first color resist, a second color resist, and a third color resist. The formation of the color conversion layer on the carrier substrate includes: A first color resist material layer is coated, and the first color resist material layer is exposed, developed, and etched to form the first color resist. A second color resist material layer is coated, and the second color resist material layer is exposed, developed, and etched to form the second color resist. A third color resist material layer is coated, and the third color resist material layer is exposed, developed, and etched to form the third color resist.

4. The preparation method according to claim 1, characterized in that, The preparation method further includes forming a shielding layer on the pixel defining layer, wherein the surface of the shielding layer facing the opening area is an inclined surface, and the inclined surface is set at an angle to the first direction; A shielding layer is formed on the pixel defining layer, including: A second photoresist is applied, wherein the second photoresist includes a positive photoresist; The second photoresist is baked and exposed; The second photoresist is etched using a second solution, wherein the mass percentage of tetramethylammonium hydroxide in the second solution ranges from 2wt% to 3wt%. The second photoresist was ashed using oxygen. The etched second photoresist is baked to form the shielding layer.

5. The preparation method according to claim 4, characterized in that, The method for manufacturing the display panel further includes: A first polarization layer is formed, wherein the first polarization layer is disposed on the side of the color conversion layer away from the carrier substrate, and the first polarization layer covers the color conversion layer and the shielding layer; A planarization layer is formed on the side of the first polarization layer opposite to the carrier substrate; An alignment layer is formed on the side of the planarization layer opposite to the carrier substrate; A liquid crystal layer is formed, wherein the liquid crystal layer is disposed on the side of the alignment layer opposite to the carrier substrate; An array substrate is provided for cell assembly, the array substrate being disposed on the side of the liquid crystal layer opposite to the carrier substrate; A second polarization layer is provided on the side of the array substrate away from the carrier substrate, wherein the polarization direction of the second polarization layer is perpendicular to the polarization direction of the first polarization layer.

6. A display panel, characterized in that, The display panel is prepared by the preparation method according to any one of claims 1-5, and comprises: substrate; A pixel defining layer, wherein scattering particles are disposed within the pixel defining layer, the pixel defining layer is disposed on one side of the carrier substrate, and the pixel defining layer array is arranged to form multiple opening regions; and A color conversion layer includes multiple color conversion sections, the color conversion sections being disposed on one side of the carrier substrate, and the color conversion layer being disposed within the opening area; Wherein, the dimension of the pixel defining layer at the end away from the carrier substrate is larger than the dimension at the end closer to the carrier substrate, so that the pixel defining layer is inclined in a first direction along the direction close to the center of the opening area, and the cross-sectional shape of the pixel defining layer is an inverted trapezoid, and the first direction is the setting direction of the carrier substrate and the pixel defining layer.

7. The display panel according to claim 6, characterized in that, The display panel further includes a shielding layer disposed on the pixel defining layer and on the side of the pixel defining layer away from the carrier substrate. The surface of the shielding layer facing the opening area is an inclined surface, and the inclined surface is set at an angle to the first direction.

8. The display panel according to claim 6, characterized in that, The color conversion layer includes a quantum dot layer or a color resist layer.

9. The display panel according to claim 6, characterized in that, The display panel also includes: A first polarization layer is disposed on the side of the color conversion layer away from the carrier substrate, and the first polarization layer covers the color conversion layer and the shielding layer; A planarization layer is disposed on the side of the first polarization layer away from the carrier substrate; An alignment layer is disposed on the side of the planarization layer opposite to the carrier substrate; A liquid crystal layer, wherein the liquid crystal layer is disposed on the side of the alignment layer opposite to the carrier substrate; An array substrate, wherein the array substrate is disposed on the side of the liquid crystal layer opposite to the carrier substrate; A second polarization layer is disposed on the side of the array substrate away from the carrier substrate, wherein the polarization direction of the second polarization layer is perpendicular to the polarization direction of the first polarization layer.

10. A display device, characterized in that, The device includes a backlight module and a display panel as described in any one of claims 6-9, wherein the display panel is disposed on the backlight module, the backlight module is used to emit visible light to the display panel, and the display panel is used to receive visible light and form a display image.

Images