Control method, control device and equipment of semiconductor temperature control system and medium

Abstract

The invention discloses a control method, a control device, equipment and a medium of a semiconductor temperature control system, and the control method comprises the steps: firstly, collecting the working temperature of a to-be-detected object through a temperature detection module, and obtaining an error absolute value between the working temperature and a target temperature; when the error absolute value is larger than a preset temperature error threshold value, the output of the first proportional control unit, the output of the integral control unit and the output of the differential control unit are subjected to superposition processing and determined as coarse adjustment output control quantity; and when the error absolute value is smaller than or equal to a preset temperature error threshold value, at least determining the output of the integral control unit corresponding to the first moment as a fine adjustment output control quantity, and finally, according to the coarse adjustment output control quantity or the fine adjustment output control quantity, a semiconductor refrigeration module is driven to carry out temperature regulation and control. By means of the method, after the error absolute value enters the tiny preset temperature error threshold value, the fine adjustment algorithm is switched, and ultrahigh-precision constant temperature keeping is completed through optimized integral control and output amplitude limiting.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a control method, control device, equipment and medium for a semiconductor temperature control system. Background Technology

[0002] Semiconductor coolers, with their advantages of small size, silent operation, and rapid response, have been widely used in precision lasers, medical testing instruments, high-sensitivity sensors, and optical communication devices. In these high-end applications, temperature stability is a key factor determining the overall performance of the equipment. Furthermore, current semiconductor temperature control technologies generally employ a microcontroller to acquire temperature signals, use PID algorithms to calculate control quantities, and generate pulse width modulation (PWM) waveforms via timers to drive the semiconductor cooler to achieve heating or cooling operations.

[0003] However, as the requirements for temperature control accuracy continue to increase in fields such as precision lasers, the limitations of traditional end-to-end unified PID control schemes are becoming increasingly apparent. This means that the same set of PID parameters and PWM regulation logic is used throughout the entire heating, cooling, or constant-temperature process. Furthermore, to ensure the heating and cooling rates, PID algorithms typically set a large proportional gain, which results in excessively large granularity in the PWM output once the control reaches a steady state. When the temperature approaches the target temperature and falls within a small error range, conventional algorithms lack a targeted micro-step adjustment mechanism, and the PWM duty cycle adjustment resolution is insufficient to offset minor environmental thermal disturbances. This ultimately causes the temperature to repeatedly oscillate slightly around the target temperature, failing to achieve high-precision constant-temperature control, failing to stabilize within a high temperature control accuracy range, and failing to maintain an extremely narrow steady-state window. Summary of the Invention

[0004] This invention provides a control method, control device, equipment, and medium for a semiconductor temperature control system. It achieves high-precision semiconductor temperature control algorithm design and is dedicated to PWM fine-tuning control logic in the steady-state range. After the absolute value of the error enters a small preset temperature error threshold, it switches to a high-resolution fine-tuning algorithm. Through optimized integral control and output limiting, it achieves ultra-high precision temperature maintenance, such as ±0.002℃ (@24h), that is, it stabilizes within the temperature control accuracy range of ±0.002℃ and maintains an extremely narrow steady-state window of ±0.002℃.

[0005] In a first aspect, embodiments of the present invention provide a control method for a semiconductor temperature control system. The semiconductor temperature control system includes a temperature detection module, a semiconductor cooling module, and a control module, wherein the control module is electrically connected to the temperature detection module and the semiconductor cooling module, respectively; both the temperature detection module and the semiconductor cooling module are attached to the surface of the object to be measured; the control module includes a first proportional control unit, an integral control unit, and a derivative control unit. The control method includes: The temperature detection module is used to collect the working temperature of the object under test, and the absolute value of the error between the working temperature and the target temperature is obtained. When the absolute value of the error is greater than the preset temperature error threshold, the outputs of the first proportional control unit, the integral control unit and the derivative control unit are superimposed and determined as the coarse adjustment output control quantity. When the absolute value of the error is less than or equal to the preset temperature error threshold, the output of the integral control unit corresponding to the first moment is determined as the fine-tuning output control quantity; wherein, the first moment is the moment when the absolute value of the error changes from being greater than the preset temperature error threshold to being less than or equal to the preset temperature error threshold; Based on the coarse adjustment output control amount or the fine adjustment output control amount, the semiconductor cooling module is driven to perform temperature regulation so that the operating temperature changes toward the target temperature.

[0006] Optionally, when the absolute value of the error is less than or equal to the preset temperature error threshold, the output of the integral control unit corresponding to the first moment is determined as the fine-tuning output control quantity, including: When the absolute value of the error is less than or equal to the preset temperature error threshold, according to the calculation formula... The fine-tuning output control quantity u2 is determined; where K i This represents the integral coefficient corresponding to the integral control unit, and t1 represents the first time point. This represents the integral value of the absolute value of the error over the time range from 0 to t1.

[0007] Optionally, the control module further includes a second proportional control unit; wherein the proportional coefficient corresponding to the second proportional control unit is greater than the proportional coefficient corresponding to the first proportional control unit. When the absolute value of the error is less than or equal to the preset temperature error threshold, the output of the integral control unit corresponding to the first moment is determined as the fine-tuning output control quantity, including: When the absolute value of the error is less than or equal to the preset temperature error threshold, the output of the second proportional control unit is superimposed with the output of the integral control unit corresponding to the first moment, and determined as the fine-tuning output control quantity.

[0008] Optionally, the proportional coefficient corresponding to the second proportional control unit has a numerical range of 5-5.5.

[0009] Optionally, the semiconductor cooling module is driven to perform temperature regulation based on the coarse adjustment output control value or the fine adjustment output control value, so that the operating temperature changes toward the target temperature, including: The pulse width modulation waveform is determined based on the coarse adjustment output control value or the fine adjustment output control value. Based on the pulse width modulation waveform, the semiconductor cooling module is driven to perform temperature regulation so that the operating temperature changes toward the target temperature.

[0010] Optionally, determining the pulse width modulation waveform based on the coarse adjustment output control amount or the fine adjustment output control amount includes: The first target modulation duty cycle is determined based on the coarse adjustment output control quantity; The first modulation pulse width is calculated based on the product of the preset pulse frequency value and the modulation duty cycle of the first target. The pulse width modulation waveform corresponding to the coarse adjustment is determined based on the first modulation pulse width, the preset pulse frequency value, and the first target modulation duty cycle.

[0011] Optionally, determining the pulse width modulation waveform based on the coarse adjustment output control amount or the fine adjustment output control amount includes: The second target modulation duty cycle is determined based on the fine-tuned output control quantity; The first modulation pulse frequency is calculated based on the ratio of the preset pulse width value and the second target modulation duty cycle. Based on the first modulation pulse frequency, the preset pulse width value, and the second target modulation duty cycle, the pulse width modulation waveform corresponding to the fine-tuning is determined.

[0012] Secondly, embodiments of the present invention also provide a control device for a semiconductor temperature control system. The semiconductor temperature control system includes a temperature detection module, a semiconductor cooling module, and a control module, wherein the control module is electrically connected to the temperature detection module and the semiconductor cooling module, respectively; both the temperature detection module and the semiconductor cooling module are attached to the surface of the object to be measured; the control module includes a first proportional control unit, an integral control unit, and a derivative control unit. The control device includes: The data acquisition module is used to collect the working temperature of the object under test using the temperature detection module, and to obtain the absolute value of the error between the working temperature and the target temperature. The coarse adjustment output module is used to superimpose the outputs of the first proportional control unit, the integral control unit, and the derivative control unit when the absolute value of the error is greater than a preset temperature error threshold, and determine it as the coarse adjustment output control quantity. The fine-tuning output module is used to determine the output of the integral control unit corresponding to at least the first moment as the fine-tuning output control quantity when the absolute value of the error is less than or equal to the preset temperature error threshold; wherein, the first moment is the moment when the absolute value of the error changes from greater than the preset temperature error threshold to less than or equal to the preset temperature error threshold. The temperature control module is used to drive the semiconductor cooling module to perform temperature control according to the coarse adjustment output control amount or the fine adjustment output control amount, so that the operating temperature changes toward the target temperature.

[0013] Thirdly, embodiments of the present invention also provide a terminal device, including: One or more processors; Storage device for storing one or more programs; When the one or more programs are executed by the one or more processors, the one or more processors implement the control method of the semiconductor temperature control system as described in any of the first aspects.

[0014] Fourthly, embodiments of the present invention also provide a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the control method of the semiconductor temperature control system as described in any of the first aspects.

[0015] This invention provides a control method, control device, equipment, and medium for a semiconductor temperature control system. The semiconductor temperature control system includes a temperature detection module, a semiconductor cooling module, and a control module, with the control module electrically connected to both the temperature detection module and the semiconductor cooling module. Both the temperature detection module and the semiconductor cooling module are attached to the surface of the object to be measured. The control module includes a first proportional control unit, an integral control unit, and a derivative control unit. The control method first uses the temperature detection module to collect the operating temperature of the object to be measured and obtains the absolute value of the error between the operating temperature and the target temperature. Then, when the absolute value of the error is greater than a preset temperature error threshold, the outputs of the first proportional control unit, the integral control unit, and the derivative control unit are superimposed and determined as the coarse adjustment output control quantity. Furthermore, when the absolute value of the error is less than or equal to the preset temperature error threshold, the output of the integral control unit corresponding to at least the first moment is determined as the fine adjustment output control quantity. The first moment is the jump moment when the absolute value of the error changes from greater than the preset temperature error threshold to less than or equal to the preset temperature error threshold. Finally, based on the coarse adjustment output control quantity or the fine adjustment output control quantity, the semiconductor cooling module is driven to perform temperature regulation so that the operating temperature changes towards the target temperature.Using the above method, the absolute value of the error is compared with a preset temperature error threshold. When the absolute value of the error is greater than the preset temperature error threshold, the outputs of the first proportional control unit, integral control unit, and derivative control unit are superimposed. The determined coarse-adjustment output control quantity facilitates rapid heating or cooling to quickly bring the operating temperature close to the target temperature. When the absolute value of the error is less than or equal to the preset temperature error threshold, the output of the integral control unit at the first moment is subjected to integral freezing processing. This can also be understood as assigning the output of the integral control unit at the first moment to the output result of subsequent fine-tuning control. The determined fine-tuning output control quantity can stably control the operating temperature within a temperature range close to the target temperature. Thus, a high-precision semiconductor temperature control algorithm design is achieved, specifically for PWM fine-tuning control logic in the steady-state range. After the absolute value of the error enters a small preset temperature error threshold, the algorithm automatically switches from coarse-adjustment to high-resolution fine-tuning. Through optimized integral control, output limiting, and dead-zone logic, the PWM output is fine-tuned to ensure the extreme smoothness of the semiconductor cooling module's drive current in steady state, achieving ultra-high precision, such as ±0.002. Maintaining a constant temperature of ℃ (@24h), i.e., stabilizing within a temperature control accuracy range of ±0.002℃, and maintaining an extremely narrow steady-state window of ±0.002℃, effectively extends the lifespan of the semiconductor cooling module and reduces system power consumption. It avoids PWM malfunctions caused by quantization noise from related sensors, and solves the problem that a single control logic cannot simultaneously achieve both "rapid response under large temperature differences" and "extremely high stability under small temperature differences." It also resolves the parameter conflict between rapid response under large temperature differences and high-precision control under small temperature differences in a single control logic. This embodiment is based on the segmented control concept and adopts a phased approach. The temperature control strategy mentions independent control logic that allows for switching between coarse and fine adjustments. Even if the overall gain is reduced for steady-state accuracy, the dynamic response speed of the system will not be sacrificed. Even if the overall gain is increased for response speed, excessive regulation noise will not be introduced in steady state. This solves the problem that conventional semiconductor temperature control systems cannot achieve ultra-high control accuracy constant temperature control in the steady-state range when the operating temperature is close to the target temperature, and may even experience overshoot, oscillation, and frequent jitter. It keeps the fluctuation of the operating temperature relative to the target temperature within ±0.002℃, thus improving the stability of the semiconductor temperature control system.

[0016] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic flowchart of a control method for a semiconductor temperature control system provided in an embodiment of the present invention; Figure 2 This is a flowchart illustrating another control method for a semiconductor temperature control system provided in an embodiment of the present invention; Figure 3 This is a flowchart illustrating another control method for a semiconductor temperature control system provided in an embodiment of the present invention; Figure 4 This is a schematic diagram of the structure of a control device for a semiconductor temperature control system provided in an embodiment of the present invention; Figure 5 This is a schematic diagram of the structure of a terminal device provided in an embodiment of the present invention. Detailed Implementation

[0019] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0020] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0021] Figure 1This is a flowchart illustrating a control method for a semiconductor temperature control system according to an embodiment of the present invention. The semiconductor temperature control system includes a temperature detection module, a semiconductor cooling module, and a control module, with the control module electrically connected to both the temperature detection module and the semiconductor cooling module. Both the temperature detection module and the semiconductor cooling module are attached to the surface of the object to be measured. The control module includes a first proportional control unit, an integral control unit, and a derivative control unit. This control method is applicable to temperature regulation of any object to be measured with the attached temperature detection module and semiconductor cooling module. The control method can be executed by a control device for the semiconductor temperature control system, which can be implemented in hardware and / or software and can be configured in a control board. Figure 1 As shown, the control method includes: S110. Use the temperature detection module to collect the working temperature of the object under test, and obtain the absolute value of the error between the working temperature and the target temperature.

[0022] Specifically, the temperature detection module is attached to the surface of the object under test. It can collect the operating temperature of the object in real time and compare it with the target temperature to be adjusted. The difference between the operating and target temperatures is then calculated, and the absolute value of this difference is obtained as the absolute error value, which is greater than or equal to zero. Furthermore, for example, after the temperature detection module collects the operating temperature of the object under test, it can also perform median filtering to eliminate interference signals that may appear in the semiconductor temperature control system before calculating the absolute error value, effectively improving the accuracy and precision of subsequent temperature control adjustments.

[0023] Furthermore, since the temperature detection module is electrically connected to the control module, the temperature detection module can transmit the acquired absolute value of the error to the control module. This absolute value of the error is the core basis for subsequent control decisions, providing crucial error data for the selection and switching of subsequent temperature control algorithms. This ensures that the operating temperature of the object under test changes towards the target temperature under the control signal of the control module. For example, the control module can be understood as a microcontroller, including but not limited to microcontrollers, DSPs, FPGAs, and PLCs. The control module can also be understood as the core of a semiconductor temperature control system. The control module can acquire the operating temperature of the object under test in real time through the corresponding temperature detection module and calculate the deviation between the operating temperature and the target temperature, i.e., the absolute value of the error. Then, the control module can dynamically switch between two control strategies—coarse adjustment output and fine adjustment output—based on the magnitude of the absolute value of the error. In addition, this embodiment does not impose specific requirements or limitations on the location of the control module; the control module can be reasonably selected and set in a location according to the actual space design and control needs.

[0024] S120. When the absolute value of the error is greater than the preset temperature error threshold, the outputs of the first proportional control unit, the integral control unit and the derivative control unit are superimposed and determined as the coarse adjustment output control quantity.

[0025] The preset temperature error threshold is determined based on the actual temperature control scenario and control precision of the semiconductor temperature control system. The preset temperature error threshold defines the boundary between the coarse adjustment process (i.e., transient adjustment domain, large-range rapid adjustment state, large error state) and the fine adjustment process (i.e., steady-state lock-in domain, small-range precise lock-in state, small error state). For example, the preset temperature error threshold can be 0.0015℃, a value that has shown optimal results in multiple actual tests. For example, the preset temperature error threshold can be... The absolute value of the error can be e(t). Specifically, when the absolute value of the error is greater than the preset temperature error threshold, that is, when e(t) > 0. When the temperature deviates significantly from the target temperature, rapid heating or cooling is required to quickly bring the operating temperature closer to the target temperature. At this point, the control module can simultaneously activate its first proportional control unit, integral control unit, and derivative control unit; that is, the outputs of all three units are valid. The outputs of these units are then superimposed, and the resulting total output serves as the coarse adjustment control quantity for the semiconductor temperature control system. Subsequently, the control module can use this coarse adjustment control quantity to drive relevant actuators (such as a semiconductor refrigeration module) to rapidly adjust the temperature, quickly reducing the temperature deviation between the operating and target temperatures.

[0026] It should also be noted that this embodiment limits the output of the first proportional control unit, integral control unit, and derivative control unit to synchronous output. This can also be understood as the output of a PID control algorithm, where P (Proportional) corresponds to proportional control, I (Integral) corresponds to integral control, and D (Derivative) corresponds to derivative control. Static error can be reduced by first increasing the proportional coefficient of the first proportional control unit to stabilize it, then increasing the integral coefficient of the integral control unit, and finally adjusting the derivative coefficient of the derivative control unit to reduce oscillations and accelerate stabilization. For example, the proportional coefficient of the first proportional control unit can be 0.2, the integral coefficient of the integral control unit can be 0.35, and the derivative coefficient of the derivative control unit can be 0.15. This embodiment is merely an example and not a limitation; the specific values ​​of the proportional coefficient of the first proportional control unit, the integral coefficient of the integral control unit, and the derivative coefficient of the derivative control unit can be reasonably selected according to actual needs.

[0027] S130. When the absolute value of the error is less than or equal to the preset temperature error threshold, the output of the integral control unit corresponding to the first moment shall be determined as the fine-tuning output control quantity; wherein, the first moment is the moment when the absolute value of the error changes from being greater than the preset temperature error threshold to being less than or equal to the preset temperature error threshold.

[0028] For example, the preset temperature error threshold can be The absolute value of the error can be e(t). Specifically, when the absolute value of the error is less than or equal to the preset temperature error threshold, that is, when e(t) ≤ When the temperature reaches a certain value, it indicates that the deviation between the operating temperature and the target temperature is small, and there is no need for rapid heating or cooling. The operating temperature can be appropriately stabilized near the target temperature. At this time, the control module can only activate the integral control unit, that is, the output of the integral control unit is effective, while the outputs of the first proportional control unit and the derivative control unit are ineffective. This can also be understood as the first proportional control unit and the derivative control unit keeping their outputs silent, and determining the output of the integral control unit at least at the first moment as the fine-tuning output control quantity, without needing to obtain the output of the integral control unit at any moment before or after the first moment. Subsequently, the control module can also drive relevant actuators (such as semiconductor cooling modules) to stably adjust the temperature based on this fine-tuning output control quantity, keeping the operating temperature stable within a range close to the target temperature.

[0029] It should also be noted that this embodiment limits the output of the integral control unit to a single output, which can also be understood as the output of the I control algorithm. I (Integral) corresponds to integral control. By relying on the stable adjustment characteristics of the integral control unit, the nonlinear temperature control process can be linearized near the target stability, achieving fine temperature adjustment, avoiding oscillations caused by large adjustments, and ensuring temperature control accuracy. Furthermore, the output of the integral control unit only corresponds to the integral output at the first moment. This can be understood as performing integral cooling on the output of the integral control unit at the first moment, or as assigning the output of the integral control unit at the first moment to the output result of subsequent fine-tuning control. The determined fine-tuning output control quantity can stably and constantly control the operating temperature within a temperature range close to the target temperature. Furthermore, the first moment is the abrupt change when the absolute value of the error changes from being greater than the preset temperature error threshold to being less than or equal to the preset temperature error threshold. It can be understood that during the process of gradually adjusting the working temperature of the object under test towards the target temperature, the deviation between the working temperature of the object under test and the target temperature is relatively large in the time period before the first moment, that is, the absolute value of the error is greater than the preset temperature error threshold, which corresponds to the coarse adjustment process. In contrast, the deviation between the working temperature of the object under test and the target temperature is relatively small in the time period after the first moment, that is, the absolute value of the error is less than or equal to the preset temperature error threshold, which corresponds to the fine adjustment process. In other words, the first moment is the distinguishing moment between the coarse adjustment process and the fine adjustment process. The output result of the integral control unit corresponding to the first moment also corresponds to the steady-state control of the subsequent fine adjustment process.

[0030] S140. Drive the semiconductor cooling module to perform temperature regulation according to the coarse adjustment output control quantity or the fine adjustment output control quantity, so that the operating temperature changes toward the target temperature.

[0031] Specifically, the semiconductor cooling module is attached to the surface of the object under test. The control module is electrically connected to the semiconductor cooling module. The control module can switch between using coarse adjustment output control for coarse adjustment and fine adjustment output control for fine adjustment based on the magnitude of the absolute value of the error between the current operating temperature and the target temperature, and the comparison result of the absolute value of the error with a preset temperature error threshold. Correspondingly, the control module adjusts the magnitude and / or polarity and / or duty cycle of the input voltage or input current of the semiconductor cooling module to enable the semiconductor cooling module to heat or cool the object under test. For example, the driving principle of the semiconductor cooling module can be a hybrid pulse width modulation output control of PWM waveform.

[0032] In one specific embodiment, when the absolute value of the error is greater than a preset temperature error threshold, the control module can drive the semiconductor cooling module to rapidly heat or cool according to the coarse adjustment output control quantity, significantly narrowing the gap between the operating temperature and the target temperature. Exemplarily, this process can occur immediately after S120. This embodiment does not impose specific requirements or limitations on the execution order of S120, S130, and S140. Exemplarily, S140 can be executed after S120, and S140 can also be executed again after S130. In another specific embodiment, when the absolute value of the error is less than or equal to the preset temperature error threshold, the control module can drive the semiconductor cooling module to perform gradual fine adjustments according to the fine adjustment output control quantity, making the operating temperature stably approach the target temperature, achieving efficient and precise temperature control. Exemplarily, this process can occur immediately after S130. This embodiment does not impose specific requirements or limitations on the execution order of S120, S130, and S140. Exemplarily, S140 can be executed after S120, and S140 can also be executed again after S130. Furthermore, S130 and S140 can be executed in a sequential order.

[0033] The technical solution in this embodiment of the invention compares the absolute value of the error with a preset temperature error threshold. When the absolute value of the error is greater than the preset temperature error threshold, the outputs of the first proportional control unit, integral control unit, and derivative control unit are superimposed. The determined coarse adjustment output control quantity is beneficial for achieving rapid heating or cooling so that the operating temperature quickly approaches the target temperature. When the absolute value of the error is less than or equal to the preset temperature error threshold, the output of the integral control unit corresponding to the first moment is subjected to integral freezing processing. This can also be understood as assigning the output of the integral control unit corresponding to the first moment as the output result of subsequent fine adjustment control. The determined fine adjustment output control quantity can stably control the operating temperature within a temperature range close to the target temperature. In this way, a high-precision semiconductor temperature control algorithm design is realized, with PWM fine adjustment control logic specifically for the steady-state range. After the absolute value of the error enters a small preset temperature error threshold, the algorithm automatically switches from coarse adjustment to high-resolution fine adjustment. Through optimized integral control, output limiting, and dead-zone logic, the PWM output is finely adjusted to ensure that the drive current of the semiconductor cooling module is extremely smooth in the steady state, achieving ultra-high precision, such as ±0. Maintaining a constant temperature of 0.002℃ (@24h), i.e., stabilizing within a temperature control accuracy range of ±0.002℃, and maintaining an extremely narrow steady-state window of ±0.002℃, effectively extends the lifespan of the semiconductor cooling module and reduces system power consumption. It avoids PWM malfunctions caused by quantization noise from related sensors, and solves the problem that a single control logic cannot simultaneously achieve both "rapid response under large temperature differences" and "extremely high stability under small temperature differences." It also resolves the parameter conflict between rapid response under large temperature differences and high-precision control under small temperature differences in a single control logic. This embodiment is based on the segmented control concept and adopts a segmented... The staged temperature control strategy mentions independent control logic that allows for switching between coarse and fine adjustments. Even if the overall gain is reduced for steady-state accuracy, the dynamic response speed of the system will not be sacrificed. Even if the overall gain is increased for response speed, excessive regulation noise will not be introduced in steady state. This solves the problem that conventional semiconductor temperature control systems cannot achieve ultra-high control accuracy constant temperature control in the steady-state range when the operating temperature is close to the target temperature, and may even experience overshoot, oscillation, and frequent jitter. It keeps the fluctuation of the operating temperature relative to the target temperature within ±0.002℃, thus improving the stability of the semiconductor temperature control system.

[0034] Optionally, when the absolute value of the error is less than or equal to a preset temperature error threshold, the output of the integral control unit corresponding to the first moment is determined as the fine-tuning output control quantity, including: when the absolute value of the error is less than or equal to the preset temperature error threshold, according to the calculation formula... The fine-tuning output control quantity u2 is determined; where K i This represents the integral coefficient corresponding to the integral control unit, and t1 represents the first time step. This represents the integral of the absolute value of the error over the time range from 0 to t1.

[0035] Specifically, this step can be understood as a steady-state anchoring (integral freeze mechanism) process. At the instant of transitioning from the coarse-tuning process to the fine-tuning process, i.e., at the first moment t1, the semiconductor temperature control system can forcibly freeze the current integral control unit and store it as the basic driving force / basic driving control quantity. This represents the steady-state energy output necessary for the semiconductor temperature control system to maintain its current operating temperature (thermal equilibrium state). The corresponding integral freeze value is the historical cumulative error correction value memorized by the semiconductor temperature control system at the switching moment, i.e., the first moment. It can be understood that in the PID control process and its corresponding control coefficients, the characteristics of the integral control unit and its corresponding integral coefficients are key to eliminating steady-state errors. It utilizes the cumulative effect of errors to provide continuous adjustment force to achieve a precise target, providing the basic driving force for subsequent proportional regulation in engineering. Simultaneously, this operation eliminates the cumulative effect of the integral term in steady state, preventing overshoot oscillations caused by integral saturation. In a more easily understood way, this step cuts off the continuous accumulation path of the integration stage under small errors, which is physically equivalent to locking the thermal equilibrium operating point (i.e., the target temperature) of the semiconductor cooling module, fundamentally eliminating the low-frequency temperature oscillation caused by integration saturation.

[0036] Figure 2 This is a flowchart illustrating another control method for a semiconductor temperature control system provided in an embodiment of the present invention. This embodiment is an optimization based on the above embodiment. Optionally, the control module further includes a second proportional control unit; wherein the proportional coefficient corresponding to the second proportional control unit is greater than the proportional coefficient corresponding to the first proportional control unit. When the absolute value of the error is less than or equal to the preset temperature error threshold, the output of the integral control unit corresponding to the first moment shall be determined as the fine-tuning output control quantity, including: When the absolute value of the error is less than or equal to the preset temperature error threshold, the output of the second proportional control unit is superimposed with the output of the integral control unit corresponding to the first moment, and determined as the fine-tuning output control quantity.

[0037] For details not covered in this embodiment, please refer to the above embodiments. Figure 2 As shown, the control method includes: S210. Use the temperature detection module to collect the working temperature of the object under test, and obtain the absolute value of the error between the working temperature and the target temperature.

[0038] S220. When the absolute value of the error is greater than the preset temperature error threshold, the outputs of the first proportional control unit, the integral control unit and the derivative control unit are superimposed and determined as the coarse adjustment output control quantity.

[0039] S230. When the absolute value of the error is less than or equal to the preset temperature error threshold, the output of the second proportional control unit is superimposed with the output of the integral control unit corresponding to the first moment, and determined as the fine-tuning output control quantity.

[0040] Specifically, when the absolute value of the error is less than or equal to the preset temperature error threshold, it indicates that the deviation between the operating temperature and the target temperature is small, and there is no need for rapid heating or cooling. The operating temperature can be appropriately stabilized near the target temperature. At this time, the control module can simultaneously activate the integral control unit and the second proportional control unit. That is, the outputs of the integral control unit and the second proportional control unit are effective, while the outputs of the first proportional control unit and the derivative control unit are ineffective. This can also be understood as the first proportional control unit and the derivative control unit remaining silent. The output of the second proportional control unit is then superimposed with the output of the integral control unit corresponding to the first moment. The total output result can be used as the fine-tuning output control quantity of the semiconductor temperature control system. Subsequently, the control module can also drive relevant actuators (such as semiconductor refrigeration modules) to stably adjust the temperature based on this fine-tuning output control quantity, keeping the operating temperature stable within a range close to the target temperature.

[0041] This step can be understood as the combined action of a steady-state anchoring (integral freeze mechanism) process and an incremental compensation (incremental micro-bias proportional control) process. Details of the steady-state anchoring (integral freeze mechanism) process can be found in the above embodiments. Based on the steady-state anchoring (integral freeze mechanism) process, this semiconductor temperature control system also incorporates a highly sensitive micro-bias proportional controller, i.e., an additional second proportional control unit, which dynamically compensates only for minute temperature disturbances, specifically for handling small-signal disturbances in steady state. Optionally, according to the calculation formula... +K p ×e(t) determines the fine-tuning output control quantity u2; where K i K represents the integral coefficient corresponding to the integral control unit. p K represents the proportional coefficient corresponding to the second proportional control unit. p×e(t) can represent the fine-tuning incremental compensation amount. The combined output of the integral control unit and the second proportional control unit can balance fine-tuning response and steady-state deviation elimination capability, avoid temperature oscillation, and achieve high-precision and stable regulation near the target temperature. By anchoring the basic drive energy at the moment of entering steady state and cutting off the integral link, only the extremely sensitive micro-proportional term is used to compensate for steady-state disturbances. This solves the problem of temperature overshoot and low-frequency oscillation caused by the cumulative effect of integral history when approaching the target temperature in traditional PID control. It achieves rigid locking of the target temperature without overshoot, improves the control accuracy of the semiconductor temperature control system to the ±0.002℃ (@24h) level, and significantly improves the stability index of the semiconductor temperature control system. In a more easily understood way, the control model in this step can be understood as degenerating into a "feedforward + pure proportional" mode. Since the steady-state anchoring (integral freeze mechanism) process has already provided most of the energy (such as 99% of the energy) required to maintain the current operating temperature, the incremental compensation (incremental micro-proportional adjustment) process only needs to deal with the remaining extremely small thermal disturbances. This decoupled design enables the system to make instantaneous and linear reverse corrections to micron-level temperature deviations, achieving a "rigid" lock-in of the target temperature.

[0042] In this embodiment, the proportional coefficient corresponding to the second proportional control unit is greater than that corresponding to the first proportional control unit. Optionally, the numerical range of the proportional coefficient corresponding to the second proportional control unit is 5-5.5. That is, in this embodiment, a first proportional control unit and a second proportional control unit are used. The first proportional control unit and the second proportional control unit are not the same proportional control unit, and the first proportional control unit is used in the coarse adjustment process, while the second proportional control unit is used in the fine adjustment process. The application times of the two are also different, and it is not equivalent to changing the proportional coefficient of the same proportional control unit and applying it to both the coarse adjustment process and the fine adjustment process simultaneously.

[0043] S240: Drive the semiconductor cooling module to perform temperature regulation based on the coarse adjustment output control quantity or the fine adjustment output control quantity, so that the operating temperature changes toward the target temperature.

[0044] Figure 3 This is a flowchart illustrating another control method for a semiconductor temperature control system provided in this embodiment of the invention. This embodiment is an optimization based on the above embodiment. Optionally, the semiconductor refrigeration module is driven to perform temperature regulation according to the coarse adjustment output control quantity or the fine adjustment output control quantity, so that the operating temperature changes towards the target temperature, including: Determine the pulse width modulation waveform based on the coarse or fine output control value; Based on pulse width modulation waveforms, the semiconductor cooling module is driven to regulate temperature so that the operating temperature changes toward the target temperature.

[0045] For details not covered in this embodiment, please refer to the above embodiments. Figure 3 As shown, the control method includes: S310. Use the temperature detection module to collect the working temperature of the object under test, and obtain the absolute value of the error between the working temperature and the target temperature.

[0046] S320. When the absolute value of the error is greater than the preset temperature error threshold, the outputs of the first proportional control unit, the integral control unit and the derivative control unit are superimposed and determined as the coarse adjustment output control quantity.

[0047] S330. When the absolute value of the error is less than or equal to the preset temperature error threshold, the output of the integral control unit corresponding to the first moment shall be determined as the fine-tuning output control quantity; wherein, the first moment is the moment when the absolute value of the error changes from being greater than the preset temperature error threshold to being less than or equal to the preset temperature error threshold.

[0048] S340. Determine the pulse width modulation waveform based on the coarse adjustment output control quantity or the fine adjustment output control quantity.

[0049] Specifically, this step essentially employs an innovative hybrid modulation technology at the output end, automatically switching between fixed frequency width modulation (PWM) mode and fixed pulse width frequency modulation (PFM) mode according to actual needs, and introducing a jitter algorithm based on error energy. This solves the control blind zone problem caused by the low resolution of traditional digital PWM, and also solves the quantization error problem of digital timers at low power output, achieving ultra-high precision control of ±0.002℃ (@24h).

[0050] In one specific implementation, optionally, determining the pulse width modulation waveform based on the coarse adjustment output control amount or the fine adjustment output control amount includes: determining a first target modulation duty cycle based on the coarse adjustment output control amount; calculating a first modulation pulse width based on the product of a preset pulse frequency value and the first target modulation duty cycle; and determining the pulse width modulation waveform corresponding to the coarse adjustment based on the first modulation pulse width, the preset pulse frequency value, and the first target modulation duty cycle.

[0051] Specifically, this can be understood as a fixed-frequency pulse width modulation (PWM) mode. In the coarse-tuning stage of the semiconductor temperature control system, the first target modulation duty cycle is calculated and determined based on the coarse-tuning output control quantity and the rule that the coarse-tuning output control quantity is equal to the first target modulation duty cycle. This first target modulation duty cycle is in percentage form. This first target modulation duty cycle directly determines the ratio of the effective level of the subsequently obtained pulse width modulation waveform to the corresponding pulse period time, and is a key parameter of the output in the coarse-tuning stage. Then, the preset pulse frequency value is multiplied by the first target modulation duty cycle to calculate the first modulation pulse width, which clearly defines the duration of the effective level within a single pulse period. For example, it can be calculated using the formula CCR1 = ... The first modulation pulse width CCR1 is calculated, where ARR1 represents the preset pulse frequency value, and D1 represents the first target modulation duty cycle. Both ARR1 and D1 are rounded down, indicating that the calculation result is converted to an integer. The first modulation pulse width CCR1 can also be understood as the capture-compare register value, which determines the period frequency of the PWM waveform. In this case, the first modulation pulse width CCR1 is a variable that can dynamically change with the first target modulation duty cycle D1. The preset pulse frequency value ARR1 can also be understood as a fixed automatic reload register value, which can be a default period value of 250 or 1000 and remains unchanged, maintaining a constant output frequency. Finally, this semiconductor temperature control system can comprehensively consider the three core parameters—the first modulation pulse width, the preset pulse frequency value, and the first target modulation duty cycle—and generate a PWM waveform adapted to the coarse adjustment stage according to the standard timing logic of pulse width modulation. This waveform can output a large regulating power, driving the semiconductor refrigeration module to quickly execute heating or cooling actions, effectively reducing temperature deviation. In a more easily understood way, fixed frequency pulse width modulation (PWM) mode can reduce electromagnetic interference by maintaining a fixed frequency in the high power range and linearly control the output power by adjusting the width of the effective level, such as the high level.

[0052] In another specific implementation, optionally, determining the pulse width modulation waveform based on the coarse adjustment output control amount or the fine adjustment output control amount includes: determining the second target modulation duty cycle based on the fine adjustment output control amount; calculating the first modulation pulse frequency based on the ratio of the preset pulse width value and the second target modulation duty cycle; and determining the pulse width modulation waveform corresponding to the fine adjustment based on the first modulation pulse frequency, the preset pulse width value, and the second target modulation duty cycle.

[0053] Specifically, this can be understood as a fixed pulse width modulation (PFM) mode. In the fine-tuning stage of the semiconductor temperature control system, the second target modulation duty cycle is calculated and determined based on the fine-tuning output control quantity and the rule that the fine-tuning output control quantity is equal to the second target modulation duty cycle. This second target modulation duty cycle is in percentage form. This second target modulation duty cycle is adapted to the low-power, high-precision adjustment requirements of the fine-tuning stage, avoiding temperature oscillations caused by high-power output in the coarse-tuning stage. It directly determines the effective level of the subsequently obtained pulse width modulation waveform and the time ratio of the corresponding pulse period, making it a key parameter for the fine-tuning stage output. Then, the preset pulse width value is divided by the second target modulation duty cycle to calculate the first modulation pulse frequency, thereby determining the pulse period of the PWM waveform in the fine-tuning stage. For example, it can be calculated using the formula ARR2 = ... The first modulation pulse frequency ARR2 is calculated, where CCR2 represents the preset pulse width value, and D2 represents the second target modulation duty cycle. Both CCR2 and D2 are rounded down, indicating that the calculation result is converted to an integer. The first modulation pulse frequency ARR2 can also be understood as the value of the auto-reload register, determining the period length of the PWM waveform. In this case, the first modulation pulse frequency ARR2 is a variable that can dynamically change with the second target modulation duty cycle D2. The preset pulse width value CCR2 can also be understood as a fixed capture-compare register value, which can be the minimum pulse width allowed by the hardware (e.g., 6 clock cycles) and remains constant. Finally, this semiconductor temperature control system can comprehensively consider the three core parameters—the first modulation pulse frequency, the preset pulse width value, and the second target modulation duty cycle—and generate a PWM waveform adapted for the fine-tuning stage according to the standard timing logic of pulse width modulation. This waveform can achieve micro-power output, driving the semiconductor cooling module to perform smooth temperature fine-tuning, allowing the operating temperature to accurately approach and stabilize at the target temperature. In a more easily understood way, the fixed pulse width frequency modulation (PFM) mode transforms the adjustment of voltage amplitude into frequency adjustment on the time axis. With the preset pulse width value CCR2 constant, the energy density is diluted by lengthening the frequency of the first modulation pulse ARR2, thereby achieving extremely high adjustment resolution in the extremely low power region.

[0054] S350, based on pulse width modulation waveform, drives the semiconductor cooling module to perform temperature regulation so that the operating temperature changes toward the target temperature.

[0055] Specifically, the control module can output a generated pulse width modulation (PWM) waveform as a drive signal to the semiconductor cooling module. The PWM waveform can precisely control the cooling or heating power output of the semiconductor cooling module by changing at least one of its duty cycle, pulse frequency, and pulse width. The PWM waveform corresponding to the coarse adjustment process enables rapid high-power temperature regulation, while the PWM waveform corresponding to the fine adjustment process enables stable, low-power fine-tuning, ultimately allowing the operating temperature of the object under test to continuously approach the target temperature, achieving efficient and precise temperature control.

[0056] Figure 4 This is a schematic diagram of the control device for a semiconductor temperature control system provided in an embodiment of the present invention. The semiconductor temperature control system includes a temperature detection module, a semiconductor cooling module, and a control module, with the control module electrically connected to both the temperature detection module and the semiconductor cooling module. Both the temperature detection module and the semiconductor cooling module are attached to the surface of the object to be measured. The control module includes a first proportional control unit, an integral control unit, and a derivative control unit. This semiconductor temperature control system control device is applicable to temperature regulation of any object to be measured with the temperature detection module and the semiconductor cooling module attached. The control device can be implemented in hardware and / or software and is generally configured in a control board. Figure 4 As shown, the control device includes: The data acquisition module 410 is used to acquire the working temperature of the object under test using the temperature detection module, and to obtain the absolute value of the error between the working temperature and the target temperature; the coarse adjustment output module 420 is used to superimpose the outputs of the first proportional control unit, the integral control unit, and the derivative control unit when the absolute value of the error is greater than the preset temperature error threshold, and determine it as the coarse adjustment output control quantity; the fine adjustment output module 430 is used to determine the output of the integral control unit corresponding to at least the first moment as the fine adjustment output control quantity when the absolute value of the error is less than or equal to the preset temperature error threshold; wherein, the first moment is the jump moment when the absolute value of the error changes from greater than the preset temperature error threshold to less than or equal to the preset temperature error threshold; the temperature control module 440 is used to drive the semiconductor cooling module to perform temperature control according to the coarse adjustment output control quantity or the fine adjustment output control quantity, so that the working temperature changes toward the target temperature.

[0057] The technical solution in this embodiment of the invention compares the absolute value of the error with a preset temperature error threshold. When the absolute value of the error is greater than the preset temperature error threshold, the outputs of the first proportional control unit, integral control unit, and derivative control unit are superimposed. The determined coarse adjustment output control quantity is beneficial for achieving rapid heating or cooling so that the operating temperature quickly approaches the target temperature. When the absolute value of the error is less than or equal to the preset temperature error threshold, the output of the integral control unit corresponding to the first moment is subjected to integral freezing processing. This can also be understood as assigning the output of the integral control unit corresponding to the first moment as the output result of subsequent fine adjustment control. The determined fine adjustment output control quantity can stably control the operating temperature within a temperature range close to the target temperature. In this way, a high-precision semiconductor temperature control algorithm design is realized, with PWM fine adjustment control logic specifically for the steady-state range. After the absolute value of the error enters a small preset temperature error threshold, the algorithm automatically switches from coarse adjustment to high-resolution fine adjustment. Through optimized integral control, output limiting, and dead-zone logic, the PWM output is finely adjusted to ensure that the drive current of the semiconductor cooling module is extremely smooth in the steady state, achieving ultra-high precision, such as ±0. Maintaining a constant temperature of 0.002℃ (@24h), i.e., stabilizing within a temperature control accuracy range of ±0.002℃, and maintaining an extremely narrow steady-state window of ±0.002℃, effectively extends the lifespan of the semiconductor cooling module and reduces system power consumption. It avoids PWM malfunctions caused by quantization noise from related sensors, and solves the problem that a single control logic cannot simultaneously achieve both "rapid response under large temperature differences" and "extremely high stability under small temperature differences." It also resolves the parameter conflict between rapid response under large temperature differences and high-precision control under small temperature differences in a single control logic. This embodiment is based on the segmented control concept and adopts a segmented... The staged temperature control strategy mentions independent control logic that allows for switching between coarse and fine adjustments. Even if the overall gain is reduced for steady-state accuracy, the dynamic response speed of the system will not be sacrificed. Even if the overall gain is increased for response speed, excessive regulation noise will not be introduced in steady state. This solves the problem that conventional semiconductor temperature control systems cannot achieve ultra-high control accuracy constant temperature control in the steady-state range when the operating temperature is close to the target temperature, and may even experience overshoot, oscillation, and frequent jitter. It keeps the fluctuation of the operating temperature relative to the target temperature within ±0.002℃, thus improving the stability of the semiconductor temperature control system.

[0058] Based on the above technical solution, optionally, the fine-tuning output module 430 may specifically include a first fine-tuning output unit, which is used to adjust the output according to the calculation formula when the absolute value of the error is less than or equal to a preset temperature error threshold. The fine-tuning output control quantity u2 is determined; where K i This represents the integral coefficient corresponding to the integral control unit, and t1 represents the first time step. This represents the integral of the absolute value of the error over the time range from 0 to t1.

[0059] Optionally, the control module further includes a second proportional control unit; wherein the proportional coefficient corresponding to the second proportional control unit is greater than the proportional coefficient corresponding to the first proportional control unit; the fine-tuning output module 430 may specifically include a second fine-tuning output unit, which is used to superimpose the output of the second proportional control unit and the output of the integral control unit corresponding to the first moment when the absolute value of the error is less than or equal to a preset temperature error threshold, and determine it as the fine-tuning output control quantity.

[0060] Optionally, the temperature control module 440 may specifically include a waveform determination unit and a temperature control unit. The waveform determination unit is used to determine the pulse width modulation waveform based on the coarse adjustment output control quantity or the fine adjustment output control quantity. The temperature control unit is used to drive the semiconductor cooling module to perform temperature control based on the pulse width modulation waveform so that the operating temperature changes toward the target temperature.

[0061] Optionally, the waveform determination unit may specifically include a first duty cycle determination subunit, a pulse width calculation subunit, and a first waveform determination subunit. The first duty cycle determination subunit is used to determine a first target modulation duty cycle based on the coarse adjustment output control quantity. The pulse width calculation subunit is used to calculate a first modulation pulse width based on the product of a preset pulse frequency value and the first target modulation duty cycle. The first waveform determination subunit is used to determine the pulse width modulation waveform corresponding to the coarse adjustment based on the first modulation pulse width, the preset pulse frequency value, and the first target modulation duty cycle.

[0062] Optionally, the waveform determination unit may specifically include a second duty cycle determination subunit, a pulse frequency calculation subunit, and a second waveform determination subunit. The second duty cycle determination subunit is used to determine the second target modulation duty cycle based on the fine-tuning output control quantity. The pulse frequency calculation subunit is used to calculate the first modulation pulse frequency based on the ratio of the preset pulse width value and the second target modulation duty cycle. The second waveform determination subunit is used to determine the pulse width modulation waveform corresponding to the fine-tuning based on the first modulation pulse frequency, the preset pulse width value, and the second target modulation duty cycle.

[0063] The control device of the semiconductor temperature control system provided in the embodiments of the present invention can execute the control method of the semiconductor temperature control system provided in any embodiment of the present invention, and has the corresponding functional modules and beneficial effects of executing the method.

[0064] Figure 5This is a schematic diagram of the structure of a terminal device provided in an embodiment of the present invention. The terminal device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The terminal device can also represent various forms of mobile devices, such as personal digital processors, cellular phones, smartphones, wearable devices (such as helmets, glasses, watches, etc.), and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the invention described and / or claimed herein.

[0065] like Figure 5 As shown, the terminal device 100 includes one or more processors 110 and a storage device communicatively connected to the processors 110. The storage device may be a read-only memory (ROM) 120, a random access memory (RAM) 130, etc. The storage device stores computer programs executable by one or more processors. The processors 110 can perform various appropriate actions and processes based on the computer programs stored in the ROM 120 or loaded from storage unit 180 into the RAM 130. The RAM 130 may also store various programs and data required for the operation of the terminal device 100. The processors 110, ROM 120, and RAM 130 are interconnected via a bus 140. An input / output (I / O) interface 150 is also connected to the bus 140.

[0066] Multiple components in terminal device 100 are connected to I / O interface 150, including: input unit 160, such as keyboard, mouse, etc.; output unit 170, such as various types of displays, speakers, etc.; storage unit 180, such as disk, optical disk, etc.; and communication unit 190, such as network card, modem, wireless transceiver, etc. Communication unit 190 allows terminal device 100 to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks.

[0067] Processor 110 can be a variety of general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of processor 110 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special-purpose artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. Processor 110 performs the various methods and processes described above, such as the control methods of a semiconductor temperature control system.

[0068] In some embodiments, the control method of the semiconductor temperature control system may be implemented as a computer program tangibly contained in a computer-readable storage medium, such as storage unit 180. In some embodiments, part or all of the computer program may be loaded and / or installed on terminal device 100 via ROM 120 and / or communication unit 190. When the computer program is loaded into RAM 130 and executed by processor 110, one or more steps of the control method of the semiconductor temperature control system described above may be performed. Alternatively, in other embodiments, processor 110 may be configured to execute the control method of the semiconductor temperature control system by any other suitable means (e.g., by means of firmware).

[0069] Various embodiments of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), systems-on-a-chip (SoCs), payload-programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments may include implementations in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which may be a dedicated or general-purpose programmable processor, capable of receiving data and instructions from a storage system, at least one input device, and at least one output device, and transmitting data and instructions to the storage system, the at least one input device, and the at least one output device.

[0070] Computer programs used to implement the methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device, such that when executed by the processor, the computer programs cause the functions / operations specified in the flowcharts and / or block diagrams to be performed. The computer programs may be executed entirely on a machine, partially on a machine, or as a standalone software package, partially on a machine and partially on a remote machine, or entirely on a remote machine or server.

[0071] In the context of this invention, a computer-readable storage medium can be a tangible medium that may contain or store a computer program for use by or in conjunction with an instruction execution system, apparatus, or device. A computer-readable storage medium may include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination thereof. Alternatively, a computer-readable storage medium may be a machine-readable signal medium. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fibers, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination thereof.

[0072] To provide interaction with a user, the systems and techniques described herein can be implemented on a terminal device having: a display device for displaying information to the user (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor); and a keyboard and pointing device (e.g., a mouse or trackball) through which the user provides input to the terminal device. Other types of devices can also be used to provide interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including sound input, voice input, or tactile input).

[0073] The systems and technologies described herein can be implemented in computing systems that include backend components (e.g., as data servers), or middleware components (e.g., application servers), or frontend components (e.g., user computers with graphical user interfaces or web browsers through which users can interact with implementations of the systems and technologies described herein), or any combination of such backend, middleware, or frontend components. The components of the system can be interconnected via digital data communication of any form or medium (e.g., communication networks). Examples of communication networks include local area networks (LANs), wide area networks (WANs), blockchain networks, and the Internet.

[0074] A computing system can include clients and servers. Clients and servers are generally located far apart and typically interact through communication networks. The client-server relationship is created by computer programs running on the respective computers and having a client-server relationship with each other. The server can be a cloud server, also known as a cloud computing server or cloud host, which is a hosting product within the cloud computing service system to address the shortcomings of traditional physical hosts and VPS services, such as high management difficulty and weak business scalability.

[0075] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this invention can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this invention can be achieved, and this is not limited herein.

[0076] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A control method for a semiconductor temperature control system, characterized in that, The semiconductor temperature control system includes a temperature detection module, a semiconductor cooling module, and a control module, wherein the control module is electrically connected to both the temperature detection module and the semiconductor cooling module; both the temperature detection module and the semiconductor cooling module are attached to the surface of the object to be measured; the control module includes a first proportional control unit, an integral control unit, and a derivative control unit; The control method includes: The temperature detection module is used to collect the working temperature of the object under test, and the absolute value of the error between the working temperature and the target temperature is obtained. When the absolute value of the error is greater than the preset temperature error threshold, the outputs of the first proportional control unit, the integral control unit and the derivative control unit are superimposed and determined as the coarse adjustment output control quantity. When the absolute value of the error is less than or equal to the preset temperature error threshold, the output of the integral control unit corresponding to the first moment is determined as the fine-tuning output control quantity; wherein, the first moment is the moment when the absolute value of the error changes from being greater than the preset temperature error threshold to being less than or equal to the preset temperature error threshold; Based on the coarse adjustment output control amount or the fine adjustment output control amount, the semiconductor cooling module is driven to perform temperature regulation so that the operating temperature changes toward the target temperature.

2. The control method according to claim 1, characterized in that, When the absolute value of the error is less than or equal to the preset temperature error threshold, the output of the integral control unit corresponding to the first moment is determined as the fine-tuning output control quantity, including: When the absolute value of the error is less than or equal to the preset temperature error threshold, according to the calculation formula... The fine-tuning output control quantity u2 is determined; where K i This represents the integral coefficient corresponding to the integral control unit, and t1 represents the first time point. This represents the integral value of the absolute value of the error over the time range from 0 to t1.

3. The control method according to claim 1, characterized in that, The control module further includes a second proportional control unit; wherein the proportional coefficient corresponding to the second proportional control unit is greater than the proportional coefficient corresponding to the first proportional control unit. When the absolute value of the error is less than or equal to the preset temperature error threshold, the output of the integral control unit corresponding to the first moment is determined as the fine-tuning output control quantity, including: When the absolute value of the error is less than or equal to the preset temperature error threshold, the output of the second proportional control unit is superimposed with the output of the integral control unit corresponding to the first moment, and determined as the fine-tuning output control quantity.

4. The control method according to claim 3, characterized in that, The proportional coefficient corresponding to the second proportional control unit has a value range of 5-5.

5.

5. The control method according to claim 1, characterized in that, Based on the coarse adjustment output control value or the fine adjustment output control value, drive the semiconductor cooling module to perform temperature regulation so that the operating temperature changes toward the target temperature, including: The pulse width modulation waveform is determined based on the coarse adjustment output control value or the fine adjustment output control value. Based on the pulse width modulation waveform, the semiconductor cooling module is driven to perform temperature regulation so that the operating temperature changes toward the target temperature.

6. The control method according to claim 5, characterized in that, Based on the coarse adjustment output control value or the fine adjustment output control value, determine the pulse width modulation waveform, including: The first target modulation duty cycle is determined based on the coarse adjustment output control quantity; The first modulation pulse width is calculated based on the product of the preset pulse frequency value and the modulation duty cycle of the first target. The pulse width modulation waveform corresponding to the coarse adjustment is determined based on the first modulation pulse width, the preset pulse frequency value, and the first target modulation duty cycle.

7. The control method according to claim 5, characterized in that, Based on the coarse adjustment output control value or the fine adjustment output control value, determine the pulse width modulation waveform, including: The second target modulation duty cycle is determined based on the fine-tuned output control quantity; The first modulation pulse frequency is calculated based on the ratio of the preset pulse width value and the second target modulation duty cycle. Based on the first modulation pulse frequency, the preset pulse width value, and the second target modulation duty cycle, the pulse width modulation waveform corresponding to the fine-tuning is determined.

8. A control device for a semiconductor temperature control system, characterized in that, The semiconductor temperature control system includes a temperature detection module, a semiconductor cooling module, and a control module, wherein the control module is electrically connected to both the temperature detection module and the semiconductor cooling module; both the temperature detection module and the semiconductor cooling module are attached to the surface of the object to be measured; the control module includes a first proportional control unit, an integral control unit, and a derivative control unit; The control device includes: The data acquisition module is used to collect the working temperature of the object under test using the temperature detection module, and to obtain the absolute value of the error between the working temperature and the target temperature. The coarse adjustment output module is used to superimpose the outputs of the first proportional control unit, the integral control unit, and the derivative control unit when the absolute value of the error is greater than a preset temperature error threshold, and determine it as the coarse adjustment output control quantity. The fine-tuning output module is used to determine the output of the integral control unit corresponding to at least the first moment as the fine-tuning output control quantity when the absolute value of the error is less than or equal to the preset temperature error threshold; wherein, the first moment is the moment when the absolute value of the error changes from greater than the preset temperature error threshold to less than or equal to the preset temperature error threshold. The temperature control module is used to drive the semiconductor cooling module to perform temperature control according to the coarse adjustment output control amount or the fine adjustment output control amount, so that the operating temperature changes toward the target temperature.

9. A terminal device, characterized in that, include: One or more processors; Storage device for storing one or more programs; When the one or more programs are executed by the one or more processors, the one or more processors implement the control method of the semiconductor temperature control system as described in any one of claims 1-7.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When executed by the processor, the program implements the control method of the semiconductor temperature control system as described in any one of claims 1-7.

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