MEMS gyro sensor and testing method thereof
By setting up a heating layer and a temperature sensing layer inside the MEMS gyroscope chip and adopting a combined internal and external heating strategy, the temperature can be rapidly increased and stabilized, solving the problem of low calibration efficiency of MEMS gyroscope sensors across the entire temperature range and achieving a highly efficient and accurate calibration process.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
- Filing Date
- 2026-01-30
- Publication Date
- 2026-05-12
AI Technical Summary
Existing MEMS gyroscope sensors have low full-temperature-range mapping efficiency, mainly due to long temperature-controlled waiting times, resulting in low mapping efficiency at multiple temperature points.
A heating layer and a temperature sensing layer are set inside the MEMS gyroscope chip. By combining internal and external heating, the internal temperature of the chip can be quickly raised to close to the target temperature, shortening the heating process.
It improves the efficiency of full-temperature calibration, reduces the waiting time for constant temperature, and ensures the accuracy and consistency of calibration data.
Smart Images
Figure CN122015794A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of MEMS calibration technology, and in particular to a MEMS gyroscope sensor and its testing method. Background Technology
[0002] MEMS (Micro-Electro-Mechanical Systems) gyroscope sensors are miniature angular velocity sensors manufactured using microelectromechanical technology. Their core function is to detect the rotational motion of objects. MEMS gyroscope sensor calibration involves comparing the standard input with the sensor output to determine its performance parameters and correct for errors. Sensors inherently produce errors due to manufacturing process variations, minor structural deviations, and environmental influences. Calibration allows for the establishment of an error compensation model, enabling algorithms to correct these deviations during subsequent use. Temperature is a significant environmental factor affecting MEMS gyroscope calibration results. One of the main goals of calibration is to eliminate temperature-induced errors. Temperature causes sensor performance drift, and calibration, especially full-temperature calibration, through targeted testing and compensation, ensures that the sensor maintains accurate measurements at various temperatures.
[0003] Full-temperature range calibration typically involves placing the MEMS gyroscope sensor in a temperature-controlled chamber to simulate the high and low temperature scenarios in real-world applications, acquiring performance data at different temperatures. For example, the chamber is heated to 40°C, held at that temperature for a period of time, and then the test begins. After the test, the chamber is heated to the next temperature, such as 45°C, held at that temperature for a period of time, and then the test is repeated. The holding time depends on the efficiency of heat conduction. MEMS gyroscope sensors, especially after packaging, require a relatively long time for the chip's internal components to reach thermal equilibrium with the chamber environment. This long holding time results in low efficiency for full-temperature range calibration at multiple temperature points. Summary of the Invention
[0004] This invention provides a MEMS gyroscope sensor and its testing method to solve the problem of low calibration efficiency of existing MEMS gyroscope sensors across the entire temperature range.
[0005] In a first aspect, embodiments of the present invention provide a MEMS gyroscope sensor, comprising: a housing and a MEMS gyroscope chip disposed within the housing; the MEMS gyroscope chip sequentially comprises a substrate layer, a movable structure layer, and a capping layer; a heating layer is disposed below the substrate layer; a temperature measuring layer is disposed above the capping layer; the heating layer is used to heat the MEMS gyroscope chip during calibration; wherein, during calibration, the MEMS gyroscope chip is placed in a constant temperature chamber; the constant temperature chamber is synchronously heated and kept constant at a first target temperature; the temperature measuring layer is used to monitor the internal temperature of the MEMS gyroscope chip during calibration; the heating layer is also used to stop heating after the internal temperature rises to a second target temperature; wherein, the second target temperature is not higher than the first target temperature.
[0006] In one possible implementation, multiple metallized vias are provided in the area outside the vertical projection of the movable structure in the movable structure layer; the metallized vias penetrate the cap layer, the movable structure layer and the substrate layer, and are electrically connected to the heating layer.
[0007] Secondly, embodiments of the present invention provide a testing method for a MEMS gyroscope sensor, applied to testing a MEMS gyroscope sensor as described in any possible implementation of the first aspect; the MEMS gyroscope sensor is placed in a constant temperature chamber; the method includes: during a first target temperature calibration, controlling the constant temperature chamber to rise and maintain the temperature at the first target temperature, while simultaneously controlling a heating layer to heat the MEMS gyroscope chip; when the internal temperature monitored by the temperature sensing layer rises to a second target temperature, controlling the heating layer to stop heating the MEMS gyroscope chip; wherein the second target temperature is not higher than the first target temperature; after the internal temperature monitored by the temperature sensing layer rises to the first target temperature, testing the MEMS gyroscope sensor to obtain calibration data at the first target temperature.
[0008] In one possible implementation, the MEMS gyroscope sensor further includes a chip interface, a switching switch, and a conditioning circuit; controlling the heating layer to heat the MEMS gyroscope chip includes: controlling the switching switch to connect the chip interface to the heating layer and the temperature sensing layer, so that the heating layer heats the MEMS gyroscope chip; when the internal temperature monitored by the temperature sensing layer rises to a first target temperature, testing the MEMS gyroscope sensor includes: when the internal temperature monitored by the temperature sensing layer rises to the first target temperature, controlling the switching switch to switch the chip interface from connecting to the heating layer and the temperature sensing layer to connecting to the conditioning circuit, so as to test the MEMS gyroscope sensor.
[0009] In one possible implementation, the second target temperature is lower than the first target temperature.
[0010] In one possible implementation, the step of testing the MEMS gyroscope sensor after the core temperature monitored by the temperature sensing layer rises to the first target temperature includes: testing the MEMS gyroscope sensor after the core temperature monitored by the temperature sensing layer rises to the first target temperature and after a preset delay.
[0011] In one possible implementation, multiple MEMS gyroscope sensors are installed inside the constant temperature chamber; the step of testing the MEMS gyroscope sensors after the core temperature monitored by the temperature sensing layer rises to the first target temperature and obtaining the calibration data at the first target temperature includes: when the core temperature of any MEMS gyroscope sensor rises to the first target temperature, the MEMS gyroscope sensor is tested to obtain the calibration data of the MEMS gyroscope sensor at the first target temperature.
[0012] In one possible implementation, multiple MEMS gyroscope sensors are installed inside the constant temperature chamber; the step of testing the MEMS gyroscope sensors after the core temperature monitored by the temperature sensing layer rises to the first target temperature, and obtaining the calibration data at the first target temperature, includes: testing each MEMS gyroscope sensor after the core temperature of each MEMS gyroscope sensor rises to the first target temperature, and obtaining the calibration data of each MEMS gyroscope sensor at the first target temperature.
[0013] In one possible implementation, the calibration data includes zero bias or scaling factor.
[0014] In one possible implementation, the temperature control chamber is a three-axis rotary table temperature control chamber.
[0015] This invention provides a MEMS gyroscope sensor and its testing method. By setting a heating layer and a temperature sensing layer inside the MEMS gyroscope chip, the chip is heated directly and rapidly to near the target temperature within a constant temperature chamber during calibration. This combined internal and external heating method replaces some external heat conduction with internal chip heating, improving the heating rate of the chip's internal structure and shortening the heating process, thereby improving calibration efficiency across the entire temperature range. Furthermore, the temperature sensing layer and heating layer are located on the top and bottom sides of the chip, respectively. Heat from the heating layer passes through the core structure of the chip before reaching the temperature sensing layer, allowing for more accurate characterization of the chip's internal temperature. Positioning the temperature sensing layer and heating layer around the sensitive structure of the chip also reduces the impact on the internal layout of the sensitive structure. Attached Figure Description
[0016] Figure 1 This is a schematic diagram of the structure of a MEMS gyroscope sensor provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of the structure of the MEMS gyroscope chip provided in an embodiment of the present invention; Figure 3 This is a flowchart illustrating a testing method for a MEMS gyroscope sensor provided in an embodiment of the present invention. Detailed Implementation
[0017] To enable those skilled in the art to better understand this solution, the technical solutions in the embodiments of this solution will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this solution, not all of them. Based on the embodiments of this solution, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this solution.
[0018] The term "comprising" and any other variations thereof in the specification, claims, and accompanying drawings of this invention mean "including but not limited to," and are intended to cover a non-exclusive inclusion, not limited to the examples listed herein. Furthermore, the terms "first" and "second," etc., are used to distinguish different objects, not to describe a specific order.
[0019] The implementation of the present invention will be described in detail below with reference to the accompanying drawings: This invention improves the full-temperature-range calibration efficiency by setting a heating layer and a temperature sensing layer inside the MEMS gyroscope chip, thereby shortening the heating and heat conduction time.
[0020] Figure 1 This is a schematic diagram of the structure of a MEMS gyroscope sensor provided in an embodiment of the present invention. Figure 2 This is a schematic diagram of the structure of the MEMS gyroscope chip provided in an embodiment of the present invention. (Refer to...) Figure 1 , Figure 2 The MEMS gyroscope sensor includes: a housing and a MEMS gyroscope chip disposed within the housing; the MEMS gyroscope chip sequentially includes a substrate layer, a movable structure layer, and a capping layer; a heating layer is disposed below the substrate layer; a temperature measuring layer is disposed above the capping layer; the heating layer is used to heat the MEMS gyroscope chip during calibration; wherein, during calibration, the MEMS gyroscope chip is placed in a constant temperature chamber; the constant temperature chamber is synchronously heated and kept constant at a first target temperature; the temperature measuring layer is used to monitor the internal temperature of the MEMS gyroscope chip during calibration; the heating layer is also used to stop heating after the internal temperature rises to a second target temperature; wherein, the second target temperature is not higher than the first target temperature.
[0021] In some embodiments, the sensor housing protects the internal MEMS chip and provides mechanical support and electrical interfaces. Due to the presence of the housing, heat from the incubator must pass through the housing to be conducted to the chip, further reducing the efficiency of heat conduction.
[0022] In some embodiments, the MEMS gyroscope chip is packaged within a housing. For example, an application-specific integrated circuit (ASIC) chip may also be packaged within the housing.
[0023] For example, the internal structure of a MEMS gyroscope chip, from bottom to top, includes a substrate layer, a movable structure layer, and a capping layer. The substrate layer is typically monocrystalline silicon, serving as the structural basis of the entire chip. The movable structure layer is the sensitive structure of the gyroscope, containing microstructures capable of vibration to detect angular velocity. The capping layer, typically monocrystalline silicon or glass, seals the movable structure layer, creating a clean internal environment and protecting the movable structure from contamination and external interference.
[0024] In some embodiments, a heating layer is provided below the substrate layer; a temperature sensing layer is provided above the capping layer. The heating layer is used to actively heat the entire MEMS chip when needed. The temperature sensing layer is used to monitor the internal temperature of the MEMS chip in real time.
[0025] It's important to note that the heating layer is at the bottom, and the temperature sensing layer is at the top. Heat is generated at the bottom and must pass through the substrate, movable structure layer, and capping layer before being sensed by the temperature sensing layer at the top. This means that the temperature measured by the temperature sensing layer is more representative of the true temperature of the movable structure layer at the core of the chip, rather than simply measuring the surface or ambient temperature. Placing both the heating and temperature sensing layers on the periphery of the chip, i.e., below the substrate and above the capping layer, avoids occupying or interfering with the movable structure area of the core, simplifying chip design and manufacturing.
[0026] During the calibration process, the MEMS gyroscope chip is placed in a temperature-controlled chamber. Heat from the chamber is transferred to the chip's interior, achieving temperature rise and maintenance. Finally, calibration data at a specific temperature is measured.
[0027] In some embodiments, during the first target temperature calibration, the temperature chamber is raised and maintained at the first target temperature. The first target temperature calibration indicates that the chip needs to be calibrated at the first target temperature.
[0028] In some embodiments, the heating layer is used to heat the MEMS gyroscope chip during calibration. For example, the heating layer also begins operating simultaneously with the start of heating in the thermostat chamber, actively heating the interior of the MEMS chip. This is a combined internal and external heating strategy. The external thermostat chamber provides a stable environment, while the internal heating layer rapidly raises the chip's own temperature. This is much faster than relying solely on thermostat heating because the chip has a small heat capacity, and internal heating can directly and quickly bring the core structure to near the target temperature.
[0029] In some embodiments, the temperature sensing layer monitors the internal temperature of the MEMS gyroscope chip during the first target temperature calibration. During the heating process, the temperature sensing layer also continuously monitors the actual internal temperature of the chip.
[0030] For example, when the temperature sensing layer detects that the internal temperature of the chip has risen to a preset second target temperature, the external system controls the heating to stop. That is, when heating stops, the internal temperature of the chip has risen to the second target temperature; the second target temperature is not higher than the first target temperature.
[0031] In some embodiments, the heating layer is also used to stop heating the MEMS gyroscope chip after the internal temperature rises to a second target temperature.
[0032] For example, the second target temperature is lower than the first target temperature. For instance, the second target temperature is 80°C, and the first target temperature is 85°C. When the internal temperature of the chip reaches 80°C, internal heating is stopped. At this time, the ambient temperature of the external chamber may already be 85°C. Due to the temperature difference, heat will continue to be conducted from the external environment to the inside of the chip, causing the chip temperature to naturally drift from 80°C to 85°C. This drift process allows the chip temperature to smoothly reach and stabilize at 85°C, avoiding temperature overshoot or drastic fluctuations caused by excessive internal heating power or improper stopping timing, which is beneficial to the accuracy of subsequent tests. Once it is confirmed that the chip temperature has stabilized at the first target temperature, various performance tests on the MEMS gyroscope sensor can be started to obtain the sensor's calibration data at the first target temperature.
[0033] This invention, through the placement of a heating layer and a temperature sensing layer within a MEMS gyroscope chip, allows for rapid and direct temperature increases to near the target temperature during calibration by heating the MEMS gyroscope chip within a constant-temperature chamber. This combined internal and external heating method replaces some external heat conduction with internal chip heating, improving the heating rate of the chip's internal structure and shortening the heating process, thereby enhancing calibration efficiency across the entire temperature range. Furthermore, with the temperature sensing layer and heating layer positioned on the top and bottom of the chip respectively, heat from the heating layer passes through the chip's core structure before reaching the temperature sensing layer, allowing for more accurate characterization of the chip's internal temperature. Positioning the temperature sensing layer and heating layer around the chip's sensitive structure also reduces the impact on the internal layout of the sensitive structure.
[0034] Additionally, it should be noted that traditional full-temperature calibration suffers from difficulties in determining the required isothermal waiting time and is time-consuming. For example, when the number of MEMS gyroscope sensors loaded in the same isothermal chamber varies, even if the same isothermal duration is set, the actual internal temperature reached by each chip may differ. To ensure that the ambient temperature of the chamber matches the internal temperature in all scenarios, the longest isothermal waiting time must be set according to the extreme case with the most loaded devices, resulting in low overall calibration efficiency.
[0035] This invention, by setting a temperature sensing layer inside the chip, directly collects the actual temperature inside the chip, eliminating the need to indirectly infer from the ambient temperature of the temperature chamber. It can accurately capture the isothermal inflection point where the internal temperature tends to stabilize, clearly determine whether the chip has reached the target isothermal state, thereby avoiding the excessively long waiting time in traditional methods, significantly shortening the isothermal waiting time, and improving the full-temperature range calibration efficiency.
[0036] In one possible implementation, multiple metallized vias are provided in the area outside the vertical projection of the movable structure in the movable structure layer; the metallized vias penetrate the cap layer, the movable structure layer and the substrate layer, and are electrically connected to the heating layer.
[0037] For example, the metal material inside the metallized through-hole is tungsten.
[0038] The embodiments of the present invention arrange metallized vias that penetrate the entire layer around the sensitive structure of the chip, and form a surrounding heating path with the heating layer, which ensures heating uniformity, does not interfere with the core sensitive structure, and solves the electrical connection problem of the heating layer.
[0039] Figure 3 This is a flowchart illustrating a testing method for a MEMS gyroscope sensor provided in an embodiment of the present invention. It is applied to testing a MEMS gyroscope sensor as described in any of the possible implementations above; the MEMS gyroscope sensor is placed in a temperature-controlled chamber; refer to... Figure 3 The method includes: Step 301: During the first target temperature measurement, control the constant temperature chamber to rise and maintain the temperature at the first target temperature, and at the same time control the heating layer to heat the MEMS gyroscope chip.
[0040] For example, during the first target temperature measurement, two actions are performed simultaneously: First, the temperature chamber is controlled to rise and eventually stabilize at the preset first target temperature, which is the temperature point to be tested; Second, the heating layer inside the chip is activated to actively heat the core structure of the chip.
[0041] This step utilizes combined internal and external heating to increase the heating speed. The external constant temperature chamber provides the overall ambient temperature, while the internal heating layer acts directly on the chip, replacing some of the external heat conduction. This avoids the lag problem that occurs when heating is done solely by the constant temperature chamber, where heat must penetrate the package and chip surface to reach the core structure. It quickly pushes the internal temperature to near the first target temperature, shortening the heating time.
[0042] Step 302: When the temperature inside the chip monitored by the temperature sensing layer rises to the second target temperature, control the heating layer to stop heating the MEMS gyroscope chip; wherein the second target temperature is not higher than the first target temperature.
[0043] It should be noted that the heating layer is only used during the heating phase, not during the temperature control phase. The heating layer is stopped once the second target temperature is reached.
[0044] For example, when the temperature sensing layer on the chip detects that the actual temperature inside the chip has risen to the second target temperature, the internal heating layer is immediately shut down.
[0045] For example, the second target temperature is equal to the first target temperature.
[0046] In some embodiments, the second target temperature is lower than the first target temperature.
[0047] The second target temperature being lower than the first target temperature means that the heating layer is not stopped until the internal temperature reaches the first target temperature. This is to avoid overheating due to internal heating inertia. For example, if the heating layer still has residual heat after power is cut off, the internal temperature may exceed the first target temperature. At this point, the temperature control chamber has stabilized at the first target temperature. There is a temperature difference between the internal temperature and the ambient temperature. Heat will be naturally conducted from the temperature control chamber to the chip, allowing the internal temperature to slowly and steadily reach the first target temperature.
[0048] Step 303: After the core temperature monitored by the temperature sensing layer rises to the first target temperature, the MEMS gyroscope sensor is tested to obtain the calibration data at the first target temperature.
[0049] It should be noted that the sensor's performance parameters are only true values at the first target temperature when the internal temperature is completely stable. This ensures that the test can avoid data distortion caused by temperature fluctuations.
[0050] In some embodiments, the calibration data includes zero bias or scaling factor. For example, the turntable is rotated at a known angular velocity, the output signal of the sensor is collected, and core calibration data such as zero bias and scaling factor are calculated.
[0051] In some embodiments, after step 303, the method further includes: continuing to acquire the next higher temperature point as the first target temperature, and cyclically executing steps 301 to 303 until all preset temperature points in the full temperature range test are completed.
[0052] This invention, through the placement of a heating layer and a temperature sensing layer within a MEMS gyroscope chip, allows for rapid and direct temperature increases to near the target temperature during calibration by heating the MEMS gyroscope chip within a constant-temperature chamber. This combined internal and external heating method replaces some external heat conduction with internal chip heating, improving the heating rate of the chip's internal structure and shortening the heating process, thereby enhancing calibration efficiency across the entire temperature range. Furthermore, with the temperature sensing layer and heating layer positioned on the top and bottom of the chip respectively, heat from the heating layer passes through the chip's core structure before reaching the temperature sensing layer, allowing for more accurate characterization of the chip's internal temperature. Positioning the temperature sensing layer and heating layer around the chip's sensitive structure also reduces the impact on the internal layout of the sensitive structure.
[0053] In one possible implementation, the temperature control chamber is a three-axis rotary table temperature control chamber.
[0054] On the one hand, the constant temperature chamber provides a stable temperature environment, meeting the temperature requirements for full-temperature calibration of sensors; on the other hand, the three-axis turntable can realize rotational motion in the X, Y, and Z axes, simulating the multi-angle and multi-posture working states of sensors in practical applications. The combination of these two components allows for direct testing of the performance of MEMS gyroscopes in various motion postures under different temperature conditions.
[0055] The slip ring is a key component of a three-axis turntable, acting as a bridge connecting the rotating and stationary parts. When the three-axis turntable operates, the internal turntable frame drives the MEMS gyroscope to rotate along multiple axes. The circuitry controlling the turntable's movement, the lines collecting sensor data, and the lines supplying power to the chip's heating layer are mostly fixed to the stationary base. Without the slip ring, these lines would become tangled and broken as the turntable rotates. The core function of the slip ring is to solve this problem, enabling power and signal transmission between the rotating turntable and the stationary base. The slip ring contains independent circuits separated by insulating material (each circuit corresponds to one wire), but the number of circuits cannot be increased indefinitely due to limitations in slip ring size, manufacturing process, and cost. To complete testing with a limited number of wires, a small number of circuits are used to achieve multi-channel signal transmission.
[0056] In one possible implementation, the MEMS gyroscope sensor further includes a chip interface, a switching switch, and a conditioning circuit; controlling the heating layer to heat the MEMS gyroscope chip includes: controlling the switching switch to connect the chip interface to the heating layer and the temperature sensing layer, so that the heating layer heats the MEMS gyroscope chip; when the internal temperature monitored by the temperature sensing layer rises to a first target temperature, testing the MEMS gyroscope sensor includes: when the internal temperature monitored by the temperature sensing layer rises to the first target temperature, controlling the switching switch to switch the chip interface from connecting to the heating layer and the temperature sensing layer to connecting to the conditioning circuit, so as to test the MEMS gyroscope sensor.
[0057] The chip interface is the signal input and output point for the MEMS gyroscope chip, and all external interactions with the chip are completed through this interface. A switch controls the connection and disconnection between the chip interface and different internal modules. The conditioning circuit is the MEMS gyroscope's test module, responsible for driving the vibration of the movable structure, detecting signal changes caused by the Coriolis force, and ultimately outputting a test signal related to the rotational angular velocity. Without the switch, the chip's heating layer power supply / temperature measurement signal transmission and test signal transmission would require independent lines. The switch controls the time-sharing use of these lines, allowing the same set of slip ring lines to perform different functions at different stages, eliminating the need for separate permanent lines for heating / temperature measurement.
[0058] This invention enables the same set of slip ring lines to perform dual functions of heating / temperature measurement and test signal transmission by using a time-division multiplexing chip interface, thereby reducing the number of slip ring lines required and adapting to the constraint of limited slip ring lines on a three-axis turntable.
[0059] In one possible implementation, the step of testing the MEMS gyroscope sensor after the core temperature monitored by the temperature sensing layer rises to the first target temperature includes: testing the MEMS gyroscope sensor after the core temperature monitored by the temperature sensing layer rises to the first target temperature and after a preset delay.
[0060] This invention, by waiting for a period of time after the internal temperature reaches the first target temperature, ensures that the internal temperature of the chip is completely stable and uniform, thus avoiding test errors caused by unstable temperature. Although an additional delay step is added, the total time required for the entire process is still much shorter than the traditional method that relies solely on slow heating in a constant temperature chamber, due to the combined temperature control strategy of internal heating and external constant temperature.
[0061] In one possible implementation, multiple MEMS gyroscope sensors are installed inside the constant temperature chamber; the step of testing the MEMS gyroscope sensors after the core temperature monitored by the temperature sensing layer rises to the first target temperature, and obtaining the calibration data at the first target temperature, includes: testing each MEMS gyroscope sensor after the core temperature of each MEMS gyroscope sensor rises to the first target temperature, and obtaining the calibration data of each MEMS gyroscope sensor at the first target temperature.
[0062] This invention tests all sensors under identical environmental conditions to achieve high test consistency and data comparability. This invention is applicable to scenarios with high requirements for test consistency.
[0063] In one possible implementation, multiple MEMS gyroscope sensors are installed inside the constant temperature chamber; when the core temperature monitored by the temperature sensing layer rises to a first target temperature, the MEMS gyroscope sensors are tested to obtain calibration data at the first target temperature, including: when the core temperature of any MEMS gyroscope sensor rises to the first target temperature, the MEMS gyroscope sensor is tested to obtain calibration data of the MEMS gyroscope sensor at the first target temperature.
[0064] It should be noted that the number of slip ring lines on a three-axis rotary table is limited, and each sensor test requires a certain number of slip ring lines. If multiple sensors are to be tested simultaneously, each sensor would need its own dedicated slip ring line, but the actual number of slip ring lines is far from sufficient, making simultaneous testing of multiple sensors impossible. Therefore, serial testing is the only option, where only one sensor is tested at a time. A switch or signal distributor is used to sequentially assign the limited slip ring lines to each sensor.
[0065] When multiple sensors are placed in a constant temperature chamber simultaneously, the time it takes for them to reach the first target temperature will vary due to individual differences between the sensors. If a serial mode with uniform waiting is adopted, i.e., all sensors are tested sequentially only after they have reached the target, the problem of sensors that reached the target earlier being idle and waiting will occur, wasting the temperature stabilization time.
[0066] In this embodiment of the invention, once a single sensor has completed heating and stabilized at the first target temperature, it is tested individually without waiting for other sensors, ultimately achieving efficient batch calibration. The aim is to maximize the utilization of the constant temperature chamber and testing equipment resources and improve the overall efficiency of full-temperature calibration without sacrificing testing accuracy.
[0067] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the various embodiments of the invention.
Claims
1. A MEMS gyroscope sensor, characterized in that, include: A housing and a MEMS gyroscope chip disposed within the housing; the MEMS gyroscope chip sequentially comprises a substrate layer, a movable structure layer, and a cover layer; a heating layer is disposed below the substrate layer; and a temperature sensing layer is disposed above the cover layer; The heating layer is used to heat the MEMS gyroscope chip during calibration; wherein, during calibration, the MEMS gyroscope chip is placed in a constant temperature chamber; the constant temperature chamber is heated synchronously and kept constant at a first target temperature; The temperature sensing layer is used to monitor the internal temperature of the MEMS gyroscope chip during calibration. The heating layer is also used to stop heating after the core temperature rises to a second target temperature; wherein the second target temperature is not higher than the first target temperature.
2. The MEMS gyroscope sensor as described in claim 1, characterized in that, Multiple metallized through holes are provided in the area outside the vertical projection of the movable structure in the movable structure layer; The metallized via penetrates the cap layer, the movable structural layer, and the substrate layer, and is electrically connected to the heating layer.
3. A testing method for a MEMS gyroscope sensor, characterized in that, The method is applied to testing a MEMS gyroscope sensor as described in any one of claims 1 to 2; the MEMS gyroscope sensor is placed in a temperature-controlled chamber; the method includes: During the first target temperature measurement, the constant temperature chamber is controlled to rise and remain constant at the first target temperature, while the heating layer is controlled to heat the MEMS gyroscope chip. When the temperature inside the chip monitored by the temperature sensing layer rises to the second target temperature, the heating layer is controlled to stop heating the MEMS gyroscope chip; wherein the second target temperature is not higher than the first target temperature; Once the core temperature monitored by the temperature sensing layer rises to the first target temperature, the MEMS gyroscope sensor is tested to obtain the calibration data at the first target temperature.
4. The testing method for the MEMS gyroscope sensor as described in claim 3, characterized in that, MEMS gyroscope sensors also include chip interfaces, switching switches, and conditioning circuitry; The control heating layer for heating the MEMS gyroscope chip includes: Control the switching switch to connect the chip interface to the heating layer and the temperature sensing layer, and the heating layer heats the MEMS gyroscope chip; Once the core temperature monitored by the temperature sensing layer rises to the first target temperature, the MEMS gyroscope sensor is tested, including: Once the core temperature monitored by the temperature sensing layer rises to the first target temperature, the control switch is activated to switch the chip interface from connecting to the heating layer and temperature sensing layer to connecting to the conditioning circuit for testing the MEMS gyroscope sensor.
5. The testing method for the MEMS gyroscope sensor as described in claim 3, characterized in that, The second target temperature is lower than the first target temperature.
6. The testing method for the MEMS gyroscope sensor as described in claim 3, characterized in that, The testing of the MEMS gyroscope sensor after the core temperature monitored by the temperature sensing layer rises to the first target temperature includes: Once the core temperature monitored by the temperature sensing layer rises to the first target temperature, and after a preset delay, the MEMS gyroscope sensor is tested.
7. The testing method for a MEMS gyroscope sensor as described in claim 3, characterized in that, Multiple MEMS gyroscope sensors are installed inside the constant temperature chamber; when the core temperature monitored by the temperature sensing layer rises to the first target temperature, the MEMS gyroscope sensors are tested, and the measured data obtained at the first target temperature includes: Once the internal temperature of any MEMS gyroscope sensor reaches the first target temperature, the MEMS gyroscope sensor is tested to obtain the calibration data of the MEMS gyroscope sensor at the first target temperature.
8. The testing method for the MEMS gyroscope sensor as described in claim 3, characterized in that, Multiple MEMS gyroscope sensors are installed inside the constant temperature chamber; when the core temperature monitored by the temperature sensing layer rises to the first target temperature, the MEMS gyroscope sensors are tested, and the measured data obtained at the first target temperature includes: Once the internal temperature of each MEMS gyroscope sensor has risen to the first target temperature, each MEMS gyroscope sensor is tested to obtain the calibration data of each MEMS gyroscope sensor at the first target temperature.
9. The testing method for a MEMS gyroscope sensor as described in claim 3, characterized in that, The calibration data includes zero bias or scaling factor.
10. The testing method for a MEMS gyroscope sensor as described in claim 3, characterized in that, The constant temperature chamber is a three-axis rotary table constant temperature chamber.