Method for manufacturing display panel and display panel

Abstract

The application belongs to the technical field of display, and particularly relates to a preparation method of a display panel and the display panel. The preparation method can include the following steps: providing a substrate, an organic light-emitting layer is formed on the substrate; forming a reflection structure above the organic light-emitting layer, the reflection structure is used for reflecting light of a specific wavelength; forming a color resistance layer above the reflection structure, the color resistance layer comprises a light-absorbing material capable of absorbing light of the specific wavelength; irradiating from the side of the color resistance layer with light of the specific wavelength, so that the light-absorbing material absorbs light of the specific wavelength and generates heat, thereby heating and curing the color resistance layer; wherein the reflection structure reflects light of the specific wavelength, which transmits through the color resistance layer, back to the direction of the color resistance layer. The application can effectively protect the organic light-emitting layer when curing the color resistance layer, improve the curing efficiency, and reduce the manufacturing cost.

Description

Technical Field

[0001] This application belongs to the field of display technology, specifically relating to a method for preparing a display panel and the display panel itself. Background Technology

[0002] To improve light extraction efficiency, organic light-emitting diode (OLED) display panels typically incorporate a reflective film layer on the non-light-emitting surface to form a microcavity structure. However, this structure exacerbates the reflection of ambient light, affecting display contrast. Current technologies generally employ polarizers to eliminate reflected light, but polarizers result in a light extraction efficiency loss of over 50%. To address this issue, the industry has proposed fabricating color filters on a thin-film encapsulation layer to replace polarizers, known as a COE (Coefficient of Optical Array) structure. This structure effectively improves light transmittance.

[0003] However, color filter materials typically require curing at temperatures around 230°C, while the light-emitting materials of organic light-emitting diodes (OLEDs) experience performance degradation above 100°C, making conventional color filter materials unsuitable for direct application in COE structures. Although low-temperature curing materials can be used, they are costly and have poor stability. Summary of the Invention

[0004] The purpose of this application is to provide a method for preparing a display panel and a display panel that can effectively protect the organic light-emitting layer during the curing of the color resist layer, while improving curing efficiency and reducing manufacturing costs.

[0005] The first aspect of this application provides a method for fabricating a display panel, comprising the following steps: providing a substrate, on which an organic light-emitting layer is formed; forming a reflective structure above the organic light-emitting layer, the reflective structure comprising alternately stacked high-refractive-index layers and low-refractive-index layers for reflecting light of a specific wavelength; forming a color resist layer above the reflective structure, the color resist layer comprising a first color resist material layer, a transparent material layer, and a second color resist material layer stacked sequentially, wherein the transparent material layer contains a light-absorbing material, and the first and second color resist material layers are not doped with light-absorbing materials; irradiating one side of the color resist layer with near-infrared light in the wavelength range of 700 nm to 1200 nm, causing the light-absorbing material to absorb the near-infrared light and generate heat, thereby heating and curing the color resist layer; wherein the reflective structure reflects the near-infrared light transmitted through the color resist layer back to the direction of the color resist layer.

[0006] In one exemplary embodiment of this application, the reflective structure includes multiple layers of high refractive index layers and multiple layers of low refractive index layers, wherein the high refractive index layers and the low refractive index layers are stacked alternately.

[0007] In one exemplary embodiment of this application, after forming the reflective structure and before forming the color resist layer, the method further includes the following steps: forming a light extraction material layer on the reflective structure; patterning the light extraction material layer to form a plurality of light extraction portions, wherein the cross-section of the light extraction portions gradually decreases from the substrate to the color resist layer; and forming a transparent photoresist on the light extraction portions to fill the gaps between the light extraction portions.

[0008] In one exemplary embodiment of this application, the light extraction section and the film layer on the side of the reflective structure away from the substrate are formed in the same process step.

[0009] In one exemplary embodiment of this application, the interval between adjacent light extraction sections is 0.1 μm to 1 μm; and / or the height of the light extraction section is 100 nm to 800 nm; and / or the apex angle of the light extraction section is 60° to 120°; and / or the bottom edge length of the light extraction section is 0.5 μm to 4 μm.

[0010] In one exemplary embodiment of this application, the following steps are further included before forming the reflective structure: a first inorganic encapsulation layer and an organic encapsulation layer are formed on the organic light-emitting layer, and the reflective structure is formed on the organic encapsulation layer.

[0011] In one exemplary embodiment of this application, the color resist layer includes at least one repeating unit, the repeating unit including a first color resist material layer, a transparent material layer and a second color resist material layer stacked sequentially, the transparent material layer being doped with the light-absorbing material, and the first color resist material layer and the second color resist material layer not being doped with the light-absorbing material.

[0012] A second aspect of this application provides a method for fabricating a display panel, comprising the following steps: providing a substrate, wherein an organic light-emitting layer is formed on the substrate; forming a reflective structure above the organic light-emitting layer, the reflective structure comprising alternately stacked high-refractive-index layers and low-refractive-index layers for reflecting light of a specific wavelength; forming a color resist layer above the reflective structure; providing an auxiliary substrate, the auxiliary substrate comprising an absorption layer comprising a light-absorbing material; attaching the auxiliary substrate above the color resist layer, such that the absorption layer faces the color resist layer; irradiating one side of the auxiliary substrate with near-infrared light in the wavelength range of 700 nm to 1200 nm, causing the light-absorbing material to absorb the near-infrared light and generate heat, thereby heating and curing the color resist layer; and removing the auxiliary substrate after the heating and curing is completed.

[0013] A third aspect of this application provides a display panel, comprising: a substrate; an organic light-emitting layer disposed on the substrate; a reflective structure disposed above the organic light-emitting layer, the reflective structure comprising alternately stacked high-refractive-index layers and low-refractive-index layers for reflecting near-infrared light in the wavelength range of 700 nm to 1200 nm; and a color resist layer disposed above a transparent photoresist, the color resist layer comprising at least one repeating unit, the repeating unit comprising a first color resist material layer, a transparent material layer, and a second color resist material layer stacked sequentially, the transparent material layer being doped with a light-absorbing material capable of absorbing light of the specific wavelength, the first color resist material layer and the second color resist material layer not being doped with the light-absorbing material, wherein the transparent material layer is doped with a light-absorbing material capable of absorbing the near-infrared light, and the first color resist material layer and the second color resist material layer are not doped with the light-absorbing material.

[0014] A fourth aspect of this application provides a display panel, comprising: a substrate; an organic light-emitting layer disposed on the substrate; a reflective structure disposed above the organic light-emitting layer, the reflective structure comprising alternately stacked high refractive index layers and low refractive index layers for reflecting near-infrared light with a wavelength range of 700 nm to 1200 nm; and a color resist layer disposed above the reflective structure.

[0015] The method for preparing the display panel and the display panel described in this application have at least the following beneficial effects:

[0016] The display panel manufacturing method and display panel provided in this application involve setting a reflective structure above the organic light-emitting layer and utilizing a light-absorbing material capable of absorbing specific wavelengths of light to cooperate with the light of that specific wavelength. The light-absorbing material absorbs light energy and converts it into heat energy, thereby achieving the heating and curing of the color resist layer. The light-absorbing material can be disposed inside the color resist layer or in the absorption layer of an auxiliary substrate. When the light-absorbing material is disposed inside the color resist layer, direct heating of the color resist layer is achieved. When the light-absorbing material is disposed in the absorption layer of the auxiliary substrate, heating and curing are performed by bonding the auxiliary substrate. After curing, the auxiliary substrate is removed, ensuring that the light-absorbing material does not remain inside the display panel, reducing its impact on the emitted light brightness. Simultaneously, the auxiliary substrate can be reused, reducing production costs. Regardless of the placement method, the reflective structure reflects the specific wavelength of light transmitted through the color resist layer back towards the color resist layer, allowing this wavelength of light to be utilized multiple times within the color resist layer, improving light energy utilization efficiency. At the same time, the degree to which the organic light-emitting layer is irradiated by this wavelength of light is reduced, effectively controlling the temperature of the organic light-emitting layer and maintaining its performance. This application achieves high-temperature curing of the color resist layer without affecting the organic light-emitting layer, thereby improving the curing quality and stability of the color resist layer, while also increasing light energy utilization efficiency and reducing manufacturing costs.

[0017] Other features and advantages of this application will become apparent from the following detailed description, or may be learned in part from practice of this application.

[0018] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit this application. Attached Figure Description

[0019] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. It is obvious that the drawings described below are merely some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort.

[0020] Figure 1 A schematic diagram of a method for manufacturing a display panel is shown.

[0021] Figure 2 A schematic diagram of the structural process of a display panel is shown.

[0022] Figure 3 A schematic diagram of the preparation method of the light extraction unit is shown.

[0023] Figure 4 A schematic diagram of the structure and process of the light extraction unit is shown.

[0024] Figure 5 A schematic diagram of another method for manufacturing a display panel is shown.

[0025] Figure 6 A schematic diagram of the structural process of another display panel is shown.

[0026] Figure 7 A schematic diagram of the structure of a display panel is shown.

[0027] Figure 8 A schematic diagram of another display panel structure is shown.

[0028] Explanation of reference numerals in the attached figures:

[0029] 100, Display panel; 110, Substrate; 120, Organic light-emitting layer; 130, Reflective structure; 131, High refractive index layer; 132, Low refractive index layer; 140, Light extraction unit; 150, Transparent photoresist; 160, Color resist layer; 161, First color resist material layer; 162, Transparent material layer; 163, Second color resist material layer; 170, Auxiliary substrate; 171, Absorption layer. Detailed Implementation

[0030] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided to make this application more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art.

[0031] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0032] In this application, unless otherwise expressly specified and limited, the terms "assembly," "connection," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0033] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a thorough understanding of embodiments of this application. However, those skilled in the art will recognize that the technical solutions of this application can be practiced without one or more of the specific details, or other methods, components, apparatuses, steps, etc., can be employed. In other instances, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of this application.

[0034] Example 1

[0035] See Figure 1 and Figure 2 As shown, this application provides a method for preparing a display panel 100. This method can effectively protect the organic light-emitting layer 120 when the color resist layer 160 is cured at high temperature, while improving the curing efficiency and light energy utilization rate, and can speed up the production pace.

[0036] Step S100a: Provide substrate 110.

[0037] The substrate 110 can be a rigid substrate, such as a glass substrate, quartz substrate, glass-ceramic substrate, or crystalline glass substrate, or a flexible substrate, such as polystyrene, polyvinyl alcohol, polymethyl methacrylate, polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyaryl ester, polyimide, polycarbonate, cellulose triacetate, or cellulose acetate propionate. In this embodiment, a glass substrate 110 can be used as the substrate 110.

[0038] An organic light-emitting diode (OLED) driving backplane (not shown) is fabricated on substrate 110. This driving backplane may include a thin-film transistor (TFT) array for driving the organic light-emitting layer 120 to emit light. The TFTs may be fabricated using materials such as low-temperature polycrystalline silicon, metal oxide, or amorphous silicon. In this embodiment, low-temperature polycrystalline silicon TFTs may be used because they have higher carrier mobility and can provide a larger driving current, which is beneficial for improving the brightness and response speed of the display panel 100.

[0039] The driving backplane may also include insulating layers such as a buffer layer, a gate insulating layer, an interlayer insulating layer, a via layer, and a passivation layer, as well as signal lines such as scan lines, data lines, and power lines. The buffer layer prevents impurities from diffusing into the thin-film transistor, ensuring device stability; the via layer and passivation layer provide a planarized surface, providing a good substrate for the subsequent fabrication of the organic light-emitting layer 120.

[0040] An organic light-emitting layer 120 is formed on the driving backplane. The organic light-emitting layer 120 includes an anode, a hole injection layer, a hole transport layer, a light-emitting material layer, an electron transport layer, an electron injection layer, and a cathode, which are sequentially prepared by vapor deposition or solution deposition. The anode uses a high-reflectivity metallic material such as silver or aluminum to create a microcavity effect and improve light extraction efficiency. The cathode uses a semi-transparent metal or a transparent conductive oxide, such as a magnesium-silver alloy or indium tin oxide, allowing light to exit from the top. The light-emitting material layer can use phosphorescent or fluorescent materials. Phosphorescent materials can emit light using triplet excitons, with an internal quantum efficiency theoretically reaching 100%, significantly improving display brightness. The organic light-emitting layer 120 experiences performance degradation above 100°C; therefore, subsequent processes must strictly control the heating temperature of the organic light-emitting layer 120 to ensure it does not exceed 100°C to maintain its luminescent performance and lifespan.

[0041] Before forming the reflective structure 130 described below, an encapsulation layer (not shown in the figure) is formed on the organic light-emitting layer 120 (cathode). The encapsulation layer includes a first inorganic encapsulation layer and an organic encapsulation layer. The first inorganic encapsulation layer can be prepared by chemical vapor deposition or atomic layer deposition, and the material is silicon oxide, silicon nitride, or silicon oxynitride. In this embodiment, a silicon nitride layer with a thickness of 0.5 μm to 1 μm can be prepared by chemical vapor deposition. Silicon nitride has excellent water and oxygen barrier properties, which can effectively protect the organic light-emitting layer 120 from external moisture and oxygen corrosion and extend the service life of the display panel 100. Although atomic layer deposition has higher equipment costs, it can form a denser and more uniform film, which can be used for flexible display panels 100.

[0042] An organic encapsulation layer is formed on the first inorganic encapsulation layer. The organic encapsulation layer can be prepared by inkjet printing or slot coating, and the material can be acrylic resin, epoxy resin, or polyimide resin. In this embodiment, an acrylic resin layer with a thickness of 5 μm to 10 μm can be prepared by inkjet printing. The organic encapsulation layer can planarize the surface, release stress in the thin-film encapsulation structure, and act as a buffer layer to absorb external impacts, improving the mechanical reliability of the panel. The refractive index of the organic encapsulation layer is approximately 1.5 to 1.6, which matches the refractive index of the inorganic encapsulation layer, facilitating light emission, reducing interface reflection losses, and thus improving light extraction efficiency.

[0043] The first inorganic encapsulation layer and the organic encapsulation layer together constitute part of the thin-film encapsulation structure. The subsequently formed reflective structure 130 can replace the original second inorganic encapsulation layer, thereby simplifying the process steps, reducing the number of film depositions, and improving production efficiency. This alternative design simplifies the original three-layer encapsulation structure (first inorganic layer - organic layer - second inorganic layer) to a two-layer structure (first inorganic layer - organic layer - reflective structure 130). The reflective structure 130 simultaneously undertakes encapsulation and optical functions, achieving functional integration.

[0044] Step S200a: A reflective structure 130 is formed on the organic encapsulation layer, the reflective structure 130 being used to reflect light of a specific wavelength.

[0045] In some embodiments, the reflective structure 130 may be a distributed Bragg mirror, consisting of alternating stacks of a high-refractive-index layer 131 and a low-refractive-index layer 132.

[0046] For example, the high-refractive-index layer 131 can be made of titanium dioxide (TiO2) with a refractive index of approximately 2.35 and a thickness of 50 nm to 100 nm. For instance, the thickness of this high-refractive-index layer 131 could be 85 nm, matching the center wavelength of near-infrared light (light of a specific wavelength) at 900 nm, maximizing the reflection of near-infrared light and improving reflection efficiency. Titanium dioxide has a high refractive index, high transparency, and good chemical stability, making it an ideal material for fabricating Bragg reflectors. The low-refractive-index layer 132 can be made of silicon dioxide (SiO2) with a refractive index of approximately 1.46 and a thickness of 50 nm to 100 nm, for example, 95 nm. This thickness matches the center wavelength of visible light at 550 nm, maximizing the transmission of visible light and ensuring that the light extraction efficiency of the organic light-emitting layer 120 is not affected, allowing the display panel 100 to maintain high brightness. Silicon dioxide has a low refractive index, high transmittance, and excellent adhesion properties, providing a good refractive index contrast with titanium dioxide.

[0047] Both the high-refractive-index layer 131 and the low-refractive-index layer 132 can be deposited alternately with titanium dioxide and silicon dioxide layers sequentially on the organic encapsulation layer using physical vapor deposition (PVD) or chemical vapor deposition (CVD) equipment. During deposition, the thickness of each layer is precisely controlled by adjusting the deposition time or using a film thickness monitor. First, a layer of titanium dioxide is deposited, followed by a layer of silicon dioxide; this deposition process is repeated until the preset number of stacked layers is reached. In this embodiment, a preferred stack of 6 layers is used.

[0048] The reflective structure 130 has 4 to 20 stacked layers; for example, it can have 6 layers, i.e., depositing 3 titanium dioxide layers and 3 silicon dioxide layers, with silicon dioxide as the top layer and titanium dioxide as the bottom layer. During the deposition process, the vacuum environment is maintained continuously to ensure that the interfaces between the layers are clear and the bonding is strong. Stacking 6 layers effectively improves reflectivity, effectively reflecting near-infrared light, while reducing the production efficiency and cost increase caused by excessive stacking.

[0049] Understandably, the choice of the number of stacking layers can be adjusted according to the specific product's performance requirements and cost budget. For example, high-end products can use 10 layers to further improve reflectivity.

[0050] The top layer of the stacked structure is silicon dioxide, and the bottom layer is titanium dioxide. The silicon dioxide material on the top layer is the same as the material of the subsequently formed light extraction layer, facilitating matching and synchronous formation between the layers and improving interlayer adhesion. As the top layer, the silicon dioxide layer has a low surface energy, which is beneficial for the subsequent nanoimprinting process of the light extraction layer, resulting in a clearer imprinted pattern. The bottom layer, titanium dioxide, is in direct contact with the organic encapsulation layer. The hydroxyl functional groups on the surface of titanium dioxide can form chemical bonds with the organic encapsulation layer, exhibiting good adhesion properties and ensuring that the reflective structure 130 does not peel or crack during subsequent processes.

[0051] Through the aforementioned reflective structure 130, light of a specific wavelength (e.g., near-infrared light) is effectively reflected, while visible light remains largely unaffected. This achieves localized heating without compromising the light emission performance of the display panel 100, ensuring display brightness. By adjusting the thickness of each layer, the center wavelength and bandwidth of the reflection can be precisely controlled, achieving efficient reflection of near-infrared light and efficient transmission of visible light—something impossible with a single-layer metal reflective layer.

[0052] Furthermore, the reflective structure 130 also plays an important role in the normal operation of the display panel 100. In strong outdoor light environments, sunlight contains a large amount of near-infrared components. If this sunlight directly shines on the organic light-emitting layer 120, it will cause the temperature of the organic light-emitting layer 120 to rise, accelerating aging and shortening its lifespan. The reflective structure 130 in this embodiment can reflect near-infrared light back, significantly reducing the near-infrared radiation received by the organic light-emitting layer 120, thereby improving the reliability and lifespan of the display panel 100 in outdoor environments.

[0053] In step S300a, a light extraction section 140 is formed on the reflective structure 130.

[0054] See Figure 3 and Figure 4 As shown, the formation process of the light extraction section 140 is described in the following steps:

[0055] Step S310a: A light extraction material layer is formed on the reflective structure 130.

[0056] The light extraction material layer can be made of the same material as the top layer of the reflective structure 130, such as silicon dioxide or silicon nitride, with a thickness of 100nm to 800nm. The light extraction material layer and the top layer of the reflective structure 130 can be formed simultaneously, meaning they can be deposited continuously in the same physical vapor deposition (PVD) or chemical vapor deposition (CVD) equipment without interrupting the vacuum or transferring the substrate. This reduces intermediate steps such as equipment entry / exit, cleaning, and alignment, effectively accelerating production and improving efficiency. This integrated process design combines the original two deposition and two alignment steps into a single deposition and alignment step, shortening cycle time.

[0057] Understandably, the light extraction material layer and the top layer of the reflective structure 130 can also be prepared separately.

[0058] Step S320a: The light extraction material layer is patterned to form multiple light extraction sections 140.

[0059] The patterning process employs nanoimprint lithography, imprinting microstructures onto a light-extracting material layer. Nanoimprint lithography offers advantages such as high precision, low cost, and suitability for large-area production. It can accurately replicate micro- and nanostructures on a mold with a resolution below 10 nm, and the imprinting speed can reach several meters per minute, making it suitable for mass production. Nanoimprint lithography molds can be obtained by repeatedly replicating a silicon-based master template, reducing mold costs.

[0060] See Figure 4 As shown, the light extraction section 140 formed gradually decreases in cross-section from the substrate 110 to the color resist layer 160 (i.e., from bottom to top), forming a pyramidal or conical structure. This shape has a gradient refractive index effect, which can effectively disrupt the total internal reflection condition at the interface, causing the light originally confined inside the device to be scattered or refracted, changing its propagation direction, thereby coupling it out of the device and into the air, improving the light extraction efficiency. Compared with hemispherical or columnar microstructures, the pyramidal structure has a higher light extraction efficiency because it can disrupt the total internal reflection condition over a wider angular range.

[0061] The interval (period) between adjacent light extraction units 140 is 0.1 μm to 1 μm, for example, 0.2 μm. This interval effectively controls the light extraction density, reducing the difficulty of nanoimprinting caused by excessive density, while ensuring sufficient light extraction effect. If the interval is too large, the light extraction efficiency is insufficient; if the interval is too small, the process difficulty increases and optical interference effects may occur, leading to color shift. The selection of the interval should match the emission wavelength. For short wavelengths such as blue light (450 nm) and green light (530 nm), a smaller interval is more effective; for red light (620 nm), the interval can be appropriately increased.

[0062] The height of the light extraction section 140 can range from 100 nm to 800 nm. For example, a height of 500 nm effectively disrupts total internal reflection, causing multiple scattering and refraction of light, significantly improving light extraction efficiency. If the height is too low, the light extraction effect is not obvious; if the height is too high, it may affect the subsequent planarization process and increase the process time. The ratio of height to period (aspect ratio) is also an important parameter. For example, an aspect ratio of 2.5 can form a stable pyramid structure that is not easily collapsed.

[0063] The apex angle of the light extraction unit 140 is between 60° and 120°, for example, 90°. This angle can achieve the best refractive index gradient effect, allowing light to exit with minimal reflection loss. If the apex angle is too small, the structure is too sharp, which may affect mechanical stability; if the apex angle is too large, the gradient effect is weakened, and the light extraction efficiency is reduced.

[0064] The base length of the light extraction section 140 is 0.5 μm to 4 μm, for example, 2 μm. This length matches the spacing and height, forming a proportionally coordinated pyramid structure, which is beneficial to improving light extraction efficiency. There is a synergistic relationship between the base length, spacing, and height: the base length determines the base area of ​​the pyramid, the spacing determines the number of pyramids per unit area, and the height determines the scattering angle of the light. All three together determine the light extraction efficiency.

[0065] The combined structural parameters of the light extraction section 140 cause light that would otherwise undergo total internal reflection at the interface to be scattered or refracted, changing its propagation direction and thus coupling out of the device. This light extraction structure effectively improves the light extraction efficiency and compensates for the brightness loss that may be caused by the COE structure.

[0066] In some other embodiments, a subwavelength grating structure can be formed on the surface of the pyramid light extraction section 140. This subwavelength grating structure consists of multiple parallel ridges and grooves, with the ridges and grooves alternating. The grating period is 100 nm to 400 nm, which is the distance between the center lines of two adjacent ridges; the grating depth is 50 nm to 200 nm, which is the vertical distance between the top surface of a ridge and the bottom surface of a groove; the grating duty cycle is 0.3 to 0.7, which is the ratio of the ridge width to the period. The grating extends parallel to or at a predetermined angle to the edges of the pyramid light extraction section 140.

[0067] The subwavelength grating structure can be directly formed on the surface of the pyramid light extraction section 140, forming an integral structure with the pyramid light extraction section 140 as part of the pyramid surface. This grating structure can be formed simultaneously with the pyramid light extraction section 140 using a nanoimprinting process, that is, the pyramid-shaped cavity and the subwavelength grating pattern are simultaneously prepared on the nanoimprinting mold, and the two structures are transferred to the light extraction material layer in one imprinting process.

[0068] The subwavelength grating structure makes the surface of the light extraction section 140 present an equivalent gradient refractive index distribution, thereby suppressing Fresnel reflection loss and improving light extraction efficiency.

[0069] In step S400a, after forming the light extraction section 140, a transparent photoresist 150 is formed to fill the gaps between the light extraction sections 140. See [link to previous step]. Figure 2 As shown.

[0070] The transparent photoresist 150 can be made of epoxy resin, formed by spin coating or inkjet printing, and then cured by ultraviolet light (UV). This eliminates the need for high-temperature heating, reducing the thermal impact on the organic light-emitting layer 120. Epoxy resin has low shrinkage, high light transmittance, and good mechanical properties, making it suitable as a planarization material. After the transparent photoresist 150 fills the surface, it flattens the surface, providing a smooth substrate for the subsequent formation of the color resist layer 160. Simultaneously, the transparent photoresist 150 increases the distance between the color resist layer 160 and the organic light-emitting layer 120, reducing heat conduction and further protecting the organic light-emitting layer 120 from the high temperatures generated during the curing of the color resist layer 160. The transparent photoresist 150 layer also acts as a buffer layer, absorbing the stress generated during the curing of the color resist layer 160 and reducing film cracking.

[0071] Furthermore, the refractive index of the transparent photoresist 150 can be designed to be between that of the light extraction section 140 and the color resist layer 160, for example, a refractive index of 1.5 to 1.55, thereby reducing light reflection loss at the interface and improving light coupling efficiency. This refractive index matching design can further improve light extraction efficiency.

[0072] Step S500a: A color resist layer 160 is formed above the transparent photoresist 150.

[0073] The color resist layer 160 may include at least one repeating unit, each repeating unit including a first color resist material layer 161, a transparent material layer 162 and a second color resist material layer 163 stacked sequentially.

[0074] The first color resist material layer 161 and the second color resist material layer 163 may include color resist material without light-absorbing material doping, with a thickness of 80% to 95% of the total thickness of the color resist layer 160, for example, 90% of the total thickness. This ratio ensures sufficient isolation between the upper and lower layers, reducing downward heat conduction, while also ensuring sufficient color resist thickness to meet colorimetric requirements. If the ratio between the upper and lower layers is too low, the isolation effect is insufficient, and heat is easily conducted downwards; if the ratio is too high, the intermediate transparent layer is too thin, the light absorption effect is weakened, and the heating efficiency is reduced. The upper and lower color resist material layers also perform color conversion or light filtering functions, and their thickness and material selection determine the color gamut and color accuracy of the display panel 100.

[0075] The transparent material layer 162 may include a transparent material doped with light-absorbing materials, with a thickness of 5% to 20% of the total thickness of the color resist layer 160, for example, 10% of the total thickness. This thickness ensures sufficient light absorption while minimizing the impact on visible light transmittance. The transparent material layer 162 is located between the upper and lower color resist layers 160. This structural design places the heat source in the center of the color resist layer 160, allowing heat to be conducted in both upward and downward directions, resulting in optimal heating uniformity. If the transparent layer is too thick, although light absorption is enhanced, the reduced thickness of the upper and lower color resist layers 160 may affect chromaticity; if the transparent layer is too thin, insufficient light absorption will reduce heating efficiency. The total thickness of the color resist layer 160 is designed according to the chromaticity requirements of the display panel 100, and the total thickness of the color resist layer 160 can be 2μm to 5μm. For red, green, and blue sub-pixels, due to their different luminous efficiency and chromaticity requirements, the thickness of the color resist layer 160 can be optimized separately; for example, the red color resist layer 160 can be thinner, and the blue color resist layer 160 can be thicker.

[0076] Light-absorbing materials are used to absorb light of specific wavelengths and convert it into heat energy. In some embodiments, the specific wavelength of light is near-infrared light, with a wavelength range of 700 nm to 1200 nm. The light-absorbing material can be ITO nanocrystals or near-infrared transparent dyes, with a doping concentration of approximately 0.5%. ITO nanocrystals have excellent near-infrared absorption performance and good visible light transmittance, and good chemical stability, making them less prone to reaction with color resist materials. Near-infrared transparent dyes have advantages such as tunable absorption peaks and high doping concentrations, and can be selected according to the wavelength of the specific near-infrared light source. This material has a high absorption rate for near-infrared light and very little absorption for visible light, therefore it will not significantly affect the light output brightness of the display panel 100. Simultaneously, this type of material has good thermal stability, maintaining stable performance during high-temperature curing at 230°C, without decomposition or fading.

[0077] The color resist layer 160 adopts a three-layer structure, with the middle layer doped with light-absorbing material and the top and bottom layers undoped. This structure offers the following advantages: after the middle layer absorbs near-infrared light and generates heat, the heat is evenly conducted to the top and bottom layers, ensuring uniform heating of the entire color resist layer 160 and mitigating localized overheating that could lead to cracking or uneven performance. The top and bottom layers act as isolation layers, reducing heat conduction to the lower film layers and protecting the organic light-emitting layer 120. Since the top and bottom layers contain no absorbents, they do not affect visible light transmission, ensuring high light emission efficiency. The three-layer structure can be formed sequentially in the same inkjet printing or spin coating process, offering good process compatibility. Inkjet printing allows for precise control of the thickness and uniformity of each layer, achieving high-precision, low-material-loss fabrication of the color resist layer 160.

[0078] For thicker color resist layers 160, a structure of multiple stacked repeating units can be adopted, forming multiple repeating units of "first color resist material layer 161 - transparent material layer 162 - second color resist material layer 163". For example, for color resist layers 160 with a thickness exceeding 5 μm, two or three repeating units can be set, each containing a doped layer to improve heating efficiency and heating uniformity. The multilayer repeating unit structure can increase the total thickness without changing the thickness of a single layer, reducing the problems of increased internal stress and incomplete curing caused by excessively thick single layers. An isolation layer (such as an undoped color resist layer 160) can be set between adjacent repeating units to prevent excessive heat conduction and increase the light scattering interface, thereby improving light extraction efficiency.

[0079] Furthermore, the refractive index of the color resist layer 160 can be designed with a gradient, for example, the refractive index gradually decreases from the side closer to the organic light-emitting layer 120 to the side farther away from the organic light-emitting layer 120, forming a refractive index gradient structure. This facilitates light emission from the high refractive index region to the low refractive index region, reduces total internal reflection loss, and improves light extraction efficiency. This refractive index gradient can be achieved by adjusting the doping concentration of nanoparticles in the color resist material. For example, high refractive index nanoparticles (such as zirconium oxide) can be doped on the side closer to the organic light-emitting layer 120, while low refractive index nanoparticles (such as hollow silica) can be doped on the side farther away from the organic light-emitting layer 120.

[0080] Step S600a: Irradiate the color resist layer 160 from one side using light of a specific wavelength.

[0081] Near-infrared light, with a wavelength of 700nm to 1200nm, is used to irradiate the panel from one side of the color resist layer 160. The light-absorbing material in the color resist layer 160 absorbs most of the near-infrared light and converts the light energy into heat energy, raising the temperature of the color resist layer 160 to the required curing temperature, approximately 230°C, thus completing the curing of the color resist layer 160. This curing temperature ensures that the color resist material is fully cross-linked, forming a dense and stable film layer that meets the reliability requirements of the display panel 100. Compared with hot plate heating or oven heating in related technologies, near-infrared light heating has advantages such as selective heating, fast heating speed, and a small heat-affected zone, making it particularly suitable for localized heating of heat-sensitive devices.

[0082] During irradiation, a small amount of residual near-infrared light that was not initially absorbed propagates downwards through the color resist layer 160. The reflective structure 130 reflects this residual near-infrared light back towards the color resist layer 160, allowing it to be absorbed and utilized again by the light-absorbing material. Through this multiple reflection and absorption mechanism, the near-infrared light that was not initially absorbed can be reused, improving light energy utilization efficiency. Because the reflective structure 130 has a high reflectivity for near-infrared light, most of the residual near-infrared light that passes through the color resist layer 160 is reflected back to the color resist layer 160, where it is absorbed again by the light-absorbing material, further heating the color resist layer 160, thereby improving heating efficiency and shortening curing time.

[0083] Meanwhile, the reflective structure 130 reflects the near-infrared light back to the direction of the color resist layer 160, preventing the near-infrared light from shining downwards onto the organic light-emitting layer 120. The degree of near-infrared light irradiation on the organic light-emitting layer 120 is controlled to an extremely low level, and its temperature is maintained below 100°C, so its performance is not affected, and key indicators such as luminous efficiency, color, and lifetime are all maintained.

[0084] Furthermore, the power density and time of near-infrared light irradiation can be optimized based on the thickness of the color resist layer 160 and the concentration of the light-absorbing material. For a thicker color resist layer 160, a lower power density and a longer irradiation time can be used to ensure that heat is fully conducted to the entire color resist layer 160; for a thinner color resist layer 160, a higher power density and a shorter irradiation time can be used to quickly complete curing. Through closed-loop temperature control, such as using an infrared thermal imager to monitor the surface temperature of the color resist layer 160 in real time and dynamically adjusting the power of the near-infrared light source, the curing temperature can be precisely controlled to ensure curing quality.

[0085] Through the above method, this embodiment achieves high-temperature curing of the color resist layer 160 while protecting the organic light-emitting layer 120, thus improving the problem of color resist curing damaging the organic light-emitting layer 120 during COE structure preparation in related technologies. Simultaneously, since the reflective structure 130 can replace the original second inorganic encapsulation layer, the process steps are simplified, and the number of film deposition times is reduced; the light extraction layer is formed synchronously with the top layer of the reflective structure 130, improving production efficiency and reducing manufacturing costs; the three-layer structure of the color resist layer 160 ensures heating uniformity and light emission brightness, enhancing the overall performance of the display panel 100.

[0086] Furthermore, due to the presence of the reflective structure 130, the risk of overheating caused by infrared light heating the interior of the display panel 100 in strong infrared light environments is reduced, further enhancing the panel's adaptability to various application scenarios, such as improving its reliability in strong outdoor light environments. The reflective structure 130 can also be combined with the panel's heat dissipation design to form a thermal management solution, further improving the panel's thermal stability.

[0087] Example 2

[0088] See Figure 5 and Figure 6 As shown, this second embodiment provides another method for preparing a display panel 100. The difference from the first embodiment is that the heat curing of the color resist layer 160 is performed using the absorption layer 171 on the auxiliary substrate 170, while the structure below the color resist layer 160 is the same as in the first embodiment.

[0089] Steps S100b to S400b form a reflective structure 130, a light extraction layer, and a transparent photoresist 150.

[0090] A substrate 110 is provided, and an organic light-emitting layer 120 is formed on the substrate 110. A first inorganic encapsulation layer and an organic encapsulation layer are formed on the organic light-emitting layer 120. A reflective structure 130 is formed on the organic encapsulation layer, and the reflective structure 130 is used to reflect light of a specific wavelength. A light extraction layer is formed on the reflective structure 130, and the light extraction layer includes a plurality of light extraction portions 140. The cross-section of the light extraction portions 140 gradually decreases from the substrate 110 to the color resist layer 160. A transparent photoresist 150 is formed on the light extraction portions 140 to fill the gaps between the light extraction portions 140. The above steps are exactly the same as in Embodiment 1, and will not be repeated here.

[0091] Step S500b: A color resist layer 160 is formed above the transparent photoresist 150.

[0092] Unlike Embodiment 1, the color resist layer 160 in this embodiment does not require doping with light-absorbing materials. It can use conventional color resist materials and form a single-layer or multi-layer structure through spin coating, inkjet printing, or other methods. The color resist layer 160 can be set as a red, green, or blue filter layer according to display requirements, and its thickness and material selection are the same as those of the COE structure in related technologies.

[0093] Step S600b: Provide auxiliary substrate 170.

[0094] The auxiliary substrate 170 may include a substrate and an absorbent layer 171 formed on the substrate. The substrate may be made of transparent glass or transparent plastic, such as polyethylene terephthalate or polyimide. The auxiliary substrate 170 should have sufficient mechanical strength and thermal stability to withstand temperature changes during the heating and curing process. For the fabrication of the flexible display panel 100, a flexible auxiliary substrate 170, such as a polyimide film, can be used, which facilitates bonding and peeling.

[0095] The absorption layer 171 may include a transparent organic material doped with a light-absorbing material. The transparent organic material can be epoxy resin, acrylic resin, or polyimide resin, offering a wider range of choices compared to the material in the color resist layer 160. The light-absorbing material is ITO nanocrystals or a near-infrared transparent dye, with a doping concentration that can be increased to 10%, significantly higher than the 0.5% concentration in Example 1. High-concentration doping can significantly enhance the absorption capacity for near-infrared light, improve heating efficiency, and shorten curing time. Thermally conductive fillers, such as boron nitride or alumina nanoparticles, may also be added to the absorption layer 171 to improve thermal conductivity and allow for more uniform heat transfer to the color resist layer 160.

[0096] The absorption layer 171 has a thickness of 1 μm to 5 μm, which provides sufficient light absorption while maintaining the uniformity and stability of the film. The absorption layer 171 can be formed by spin coating, spraying, or inkjet printing, which are simple and inexpensive processes. To further improve the thermal stability of the absorption layer 171, a reflective layer can be provided between the absorption layer 171 and the auxiliary substrate 170 to reflect unabsorbed near-infrared light back to the absorption layer 171, thereby improving light energy utilization.

[0097] In this way, the absorption layer 171 is formed on the auxiliary substrate 170, and the light-absorbing material in the absorption layer 171 does not remain inside the display panel 100, reducing the impact on the light output brightness of the display panel 100. This is suitable for display applications with extremely high brightness requirements. Moreover, the auxiliary substrate 170 is reusable, reducing production costs. Multiple display panels 100 can share the same auxiliary substrate 170 for heat curing, and each auxiliary substrate 170 can be used hundreds or even thousands of times. The material selection for the absorption layer 171 is more flexible, and higher concentrations of doping can be used to improve heating efficiency without considering the impact of the absorber on the color resist performance. In addition, the absorption layer 171 can be customized for different color resist materials. For example, absorption layers 171 with different doping concentrations can be used for sub-pixels of different colors to achieve differentiated heating.

[0098] Furthermore, the surface of the auxiliary substrate 170 can be treated with hydrophobic or hydrophilic agents to control the coating uniformity of the absorption layer 171; alignment marks can also be provided on the auxiliary substrate 170 to facilitate precise alignment with the display panel 100 and ensure heating uniformity.

[0099] In step S700b, the auxiliary substrate 170 is attached above the color resist layer 160, with the absorption layer 171 facing the color resist layer 160. During attachment, a small gap (e.g., 10 μm to 50 μm) can be left between the absorption layer 171 and the color resist layer 160, or it can be fixed by a transparent adhesive layer. Leaving a small gap facilitates uniform heat transfer, reduces the problem of local overheating, and also facilitates the removal of the auxiliary substrate 170 after heating is completed. If a transparent adhesive layer is used for fixation, the adhesive layer should have low thermal resistance and high light transmittance, and should be easily peeled off after heat curing without damaging the display panel 100.

[0100] In step S800b, light of a specific wavelength is used to irradiate one side of the color resist layer 160.

[0101] Near-infrared light is irradiated from one side of the auxiliary substrate 170. After passing through the auxiliary substrate 170, the near-infrared light is absorbed by the light-absorbing material in the absorption layer 171, and most of the near-infrared light is converted into heat energy. A small amount of unabsorbed residual near-infrared light continues to propagate downwards. The heat is transferred to the color resist layer 160 located above the reflective structure 130 through thermal conduction, raising the temperature of the color resist layer 160 to its curing temperature, which is approximately 230°C, thus completing the curing of the color resist layer 160. Since there are tiny gaps or adhesive layers between the absorption layer 171 and the color resist layer 160, the near-infrared light power can be appropriately increased or the irradiation time extended to compensate for heat loss.

[0102] During irradiation, a small amount of residual near-infrared light that was not initially absorbed by the absorption layer 171 continues to propagate downwards through the absorption layer 171 and the color resist layer 160. The reflective structure 130 reflects this residual near-infrared light back towards the absorption layer 171, allowing it to be absorbed and utilized again by the light-absorbing material in the absorption layer 171, further improving light energy utilization efficiency. Through this multiple reflection and absorption mechanism, the near-infrared light that was not initially absorbed can be reused, improving light energy utilization efficiency. At the same time, the reflective structure 130 blocks near-infrared light from irradiating the organic light-emitting layer 120, protecting the organic light-emitting layer 120 and ensuring that its temperature is maintained below 100°C.

[0103] After heat curing, the auxiliary substrate 170 is removed. Since the light-absorbing material in the absorption layer 171 does not remain inside the display panel 100, the light output brightness of the display panel 100 is unaffected, and the light output brightness can be further improved compared to the solution in Embodiment 1. Simultaneously, the auxiliary substrate 170 can be reused after cleaning, reducing material costs. The auxiliary substrate 170 can be cleaned using solvent cleaning or plasma cleaning to remove residual organic materials and restore surface cleanliness.

[0104] This embodiment is applicable to scenarios where the color resist layer 160 is relatively thin (e.g., the thickness of the color resist layer 160 is less than 2μm), or scenarios with higher requirements for display brightness. In practical applications, a suitable solution can be selected according to product needs. For example, for high-brightness products such as high-end TVs and automotive displays, the solution of Embodiment 2 can be selected; for products such as smartphones and wearable devices with higher requirements for thickness and integration, the solution of Embodiment 1 can be preferred.

[0105] Furthermore, this embodiment can also be combined with other heating methods, such as preheating the auxiliary substrate 170 while irradiating with near-infrared light to improve heating efficiency; or using pulsed near-infrared light irradiation to achieve a more uniform temperature distribution by utilizing the thermal relaxation effect.

[0106] Example 3

[0107] Based on the above preparation method, this application also provides two display panel 100 structures.

[0108] See Figure 7 As shown, the first type of display panel 100 (corresponding to Embodiment 1) includes: a substrate 110; an organic light-emitting layer 120 disposed on the substrate 110; a reflective structure 130 disposed above the organic light-emitting layer 120, the reflective structure 130 being used to reflect light of a specific wavelength; a light extraction portion 140 disposed above the reflective structure 130, the cross-section of the light extraction portion 140 gradually decreasing from the substrate 110 to the color resist layer 160; a transparent photoresist 150 disposed on the light extraction portion 140, the transparent photoresist 150 filling the gaps between the light extraction portions 140; and a color resist layer 160 disposed above the transparent photoresist 150, the color resist layer 160 including at least one repeating unit, the repeating unit including a first color resist material layer 161, a transparent material layer 162 and a second color resist material layer 163 stacked sequentially, the transparent material layer 162 being doped with a light-absorbing material capable of absorbing light of a specific wavelength, and the first color resist material layer 161 and the second color resist material layer 163 being undoped with light-absorbing material. The reflective structure 130 of the display panel 100 can also replace part of the thin-film encapsulation layer, simplifying the film structure. In the display panel 100, the synergistic effect of the reflective structure 130, the light extraction layer, and the color resist layer 160 enables the panel to maintain high brightness while achieving high-temperature curing of the color resist layer 160 and effective protection of the organic light-emitting layer 120.

[0109] See Figure 8As shown, the second type of display panel 100 (corresponding to Embodiment 2) includes: a substrate 110; an organic light-emitting layer 120 disposed on the substrate 110; a reflective structure 130 disposed above the organic light-emitting layer 120, the reflective structure 130 being used to reflect light of a specific wavelength; a light extraction section 140 disposed above the reflective structure 130, the cross-section of the light extraction section 140 gradually decreasing from the substrate 110 to the color resist layer 160; a transparent photoresist 150 disposed on the light extraction section 140, the transparent photoresist 150 filling the gaps between the light extraction sections 140; and a color resist layer 160 disposed above the transparent photoresist 150. The color resist layer 160 of this display panel 100 is a conventional single-layer or multi-layer structure, without any light-absorbing material. Its light-absorbing material is disposed in the absorption layer 171 of the auxiliary substrate 170 during heat curing. After curing, the auxiliary substrate 170 is removed. Therefore, the light-absorbing material does not remain inside the panel, resulting in higher light output brightness. Furthermore, the auxiliary substrate 170 can be reused, leading to lower manufacturing costs. This display panel 100 is particularly suitable for applications requiring extremely high brightness, such as outdoor displays and transparent displays.

[0110] The method for manufacturing the display panel 100 and the display panel 100 provided in this application involve setting a reflective structure 130 above the organic light-emitting layer 120, and utilizing a light-absorbing material capable of absorbing light of a specific wavelength to cooperate with the light of that specific wavelength, so that the light-absorbing material absorbs light energy and converts it into heat energy, thereby achieving heat curing of the color resist layer 160. The light-absorbing material can be disposed inside the color resist layer 160 or in the absorption layer 171 of the auxiliary substrate 170. When the light-absorbing material is disposed inside the color resist layer 160, the color resist layer 160 can be directly heated. When the light-absorbing material is disposed in the absorption layer 171 of the auxiliary substrate 170, heat curing is achieved by bonding the auxiliary substrate 170. After curing, the auxiliary substrate 170 is removed, ensuring that the light-absorbing material does not remain inside the display panel 100, reducing the impact on the emitted light brightness. Simultaneously, the auxiliary substrate 170 can be reused, reducing production costs. Regardless of the configuration, the reflective structure 130 reflects specific wavelengths of light transmitted through the color resist layer 160 back to the direction of the color resist layer 160, allowing this wavelength of light to be utilized multiple times within the color resist layer 160, thus improving light energy utilization efficiency. Simultaneously, the degree to which the organic light-emitting layer 120 is irradiated by this wavelength of light is reduced, effectively controlling the temperature of the organic light-emitting layer 120 and maintaining its performance. This application achieves high-temperature curing of the color resist layer 160 without affecting the organic light-emitting layer 120, improving the curing quality and stability of the color resist layer 160, while simultaneously increasing light energy utilization efficiency and reducing manufacturing costs.

[0111] In the description of this specification, references to terms such as "some embodiments," "exemplarily," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. The illustrative expressions of the above terms in this specification do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0112] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application. Therefore, any changes or modifications made in accordance with the claims and description of this application should fall within the scope of this patent application.

Claims

1. A method for manufacturing a display panel, characterized by, Includes the following steps: A substrate is provided on which an organic light-emitting layer is formed; A reflective structure is formed above the organic light-emitting layer. The reflective structure includes alternating stacked high-refractive-index layers and low-refractive-index layers for reflecting light of a specific wavelength. A color resist layer is formed above the reflective structure. The color resist layer includes a first color resist material layer, a transparent material layer, and a second color resist material layer stacked sequentially. The transparent material layer contains a light-absorbing material, while the first and second color resist material layers are not doped with light-absorbing materials. Near-infrared light with a wavelength range of 700nm to 1200nm is used to irradiate one side of the color resist layer, causing the light-absorbing material to absorb the near-infrared light and generate heat, thereby heating and curing the color resist layer. The reflective structure reflects the near-infrared light that has passed through the color resist layer back to the direction of the color resist layer.

2. The production method according to claim 1, characterized by, The reflective structure comprises multiple layers of high refractive index layers and multiple layers of low refractive index layers, which are stacked alternately.

3. The production method according to claim 1 or 2, characterized by, After forming the reflective structure and before forming the color resist layer, the following steps are also included: A light extraction material layer is formed on the reflective structure; The light extraction material layer is patterned to form multiple light extraction sections, and the cross-section of the light extraction section gradually decreases from the substrate to the color resist layer. A transparent photoresist is formed on the light extraction section to fill the gaps between the light extraction sections.

4. The production method according to claim 3, characterized by, The light extraction section and the film layer on the side of the reflective structure away from the substrate are formed in the same process step.

5. The preparation method according to claim 3, characterized in that, The spacing between adjacent light extraction units is 0.1 μm to 1 μm; and / or The height of the light extraction section is 100 nm to 800 nm; and / or The apex angle of the light extraction section is 60° to 120°; and / or The bottom edge length of the light extraction section is 0.5 μm to 4 μm.

6. The method of claim 1, wherein, The following steps are included before forming the reflective structure: A first inorganic encapsulation layer and an organic encapsulation layer are formed on the organic light-emitting layer, and the reflective structure is formed on the organic encapsulation layer.

7. The preparation method according to claim 1, characterized in that, The color resist layer includes at least one repeating unit, which includes a first color resist material layer, a transparent material layer, and a second color resist material layer stacked sequentially. The transparent material layer is doped with the light-absorbing material, while the first color resist material layer and the second color resist material layer are not doped with the light-absorbing material.

8. A method for manufacturing a display panel, characterized by, Includes the following steps: A substrate is provided on which an organic light-emitting layer is formed; A reflective structure is formed above the organic light-emitting layer. The reflective structure includes alternating stacked high-refractive-index layers and low-refractive-index layers for reflecting light of a specific wavelength, which is near-infrared light with a wavelength range of 700 nm to 1200 nm. A color resist layer is formed above the reflective structure; An auxiliary substrate is provided, the auxiliary substrate including an absorption layer, the absorption layer including a light-absorbing material; The auxiliary substrate is attached above the color resist layer, with the absorption layer facing the color resist layer; Near-infrared light with a wavelength range of 700nm to 1200nm is used to irradiate one side of the auxiliary substrate, causing the light-absorbing material to absorb the near-infrared light and generate heat, thereby heating and curing the color resist layer. After the heat curing is complete, the auxiliary substrate is removed.

9. A display panel, characterized by, include: Substrate; An organic light-emitting layer disposed on the substrate; A reflective structure disposed above the organic light-emitting layer, the reflective structure comprising alternating stacked high refractive index layers and low refractive index layers, is used to reflect near-infrared light with a wavelength range of 700 nm to 1200 nm. A color resist layer disposed above the reflective structure includes at least one repeating unit. The repeating unit includes a first color resist material layer, a transparent material layer, and a second color resist material layer stacked sequentially. The transparent material layer is doped with a light-absorbing material capable of absorbing the near-infrared light. The first color resist material layer and the second color resist material layer are not doped with the light-absorbing material.

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