Nanomaterials, thin films, optoelectronic devices, and display devices

Abstract

The application discloses a nanomaterial, a thin film, a photoelectric device and a display device, and relates to the technical field of display. The nanomaterial comprises inorganic nanoparticles and a polysulfide carbonate connected to the inorganic nanoparticles, and the structural formula of the polysulfide carbonate is as follows: The nanomaterial provided by the application has high stability.

Description

Technical Field

[0001] This application relates to the field of display technology, and more particularly to a nanomaterial, thin film, optoelectronic device, and display apparatus. Background Technology

[0002] Nanoparticles refer to microscopic particles with sizes on the nanometer scale, at least less than 100 nanometers in one dimension. Inorganic nanoparticles possess characteristics such as small size effect, surface and interface effect, quantum size effect, macroscopic quantum tunneling effect, strong adsorption capacity and chemical activity, and strong permeability, and are widely used in optoelectronic fields, biomedicine, and other fields.

[0003] In related technologies, ligands are often used to modify inorganic nanoparticles to regulate surface properties, improve solubility, enhance biocompatibility, and achieve targeting. However, existing ligands are prone to problems such as shedding, migration, and degradation over time, which affects the stability of inorganic nanoparticles. Summary of the Invention

[0004] In view of this, this application provides a nanomaterial, a thin film, an optoelectronic device, and a display device.

[0005] The embodiments of this application are implemented as follows: a nanomaterial comprising inorganic nanoparticles and polythiocarbonates attached to the inorganic nanoparticles, wherein the polythiocarbonates have the following structural formula:

[0006]

[0007] Where n1 is selected from integers from 1 to 5, and n2 is selected from integers from 1 to 5;

[0008] R1 and R2 are each independently selected from inorganic metal ions, ammonium ions, H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, acyl, and substituted or unsubstituted C1-C2 groups. 30 Alkyl, substituted or unsubstituted C1-C 30 Alkoxy, substituted or unsubstituted C1-C 30 Alkyl mercapto, substituted or unsubstituted C1-C 30 Alkylamine, substituted or unsubstituted C1-C 30 Alkyl carbonyl, substituted or unsubstituted C1-C 30One or more of the following: alkoxycarbonyl, aryl with 6 to 60 substituted or unsubstituted ring atoms, heteroaryl with 5 to 60 substituted or unsubstituted ring atoms, arylamino with 6 to 60 substituted or unsubstituted ring atoms, aryloxy with 6 to 60 substituted or unsubstituted ring atoms, arylthiol with 6 to 60 substituted or unsubstituted ring atoms, heteroarylamino with 5 to 60 substituted or unsubstituted ring atoms, heteroaryloxy with 5 to 60 substituted or unsubstituted ring atoms, and heteroarylthiol with 5 to 60 substituted or unsubstituted ring atoms;

[0009] When R1 and R2 are substituted by substituents, each substituent is independently selected from D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, C1-C2. 30 Alkyl, C1-C 30 One or more of alkoxy groups and aryl groups having 6 to 30 ring atoms;

[0010] The heteroatoms in the heteroaryl group, the heteroaryloxy group, the heteroarylamino group, and the heteroarylthiol group are each independently selected from one or more of O, P, N, and S.

[0011] Accordingly, embodiments of this application also provide a thin film, the material of which includes the aforementioned nanomaterials.

[0012] Accordingly, embodiments of this application also provide an optoelectronic device, including an anode, a functional layer, and a cathode stacked together, wherein the material of the functional layer includes the aforementioned nanomaterials, or the functional layer includes the aforementioned thin film.

[0013] Accordingly, embodiments of this application also provide a display device, including the aforementioned optoelectronic device.

[0014] The nanomaterials provided in this application have high stability. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 This is a flowchart of the preparation method of nanomaterials provided in the embodiments of this application;

[0017] Figure 2 This is a schematic diagram of the structure of the optoelectronic device provided in the embodiments of this application.

[0018] Figure label:

[0019] Optoelectronic device 100; anode 10; hole functional layer 20; active layer 30; electron functional layer 40; cathode 50. Detailed Implementation

[0020] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application.

[0021] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in its actual use or operating state, specifically the orientation shown in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. Furthermore, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc., are used merely as illustrative purposes and do not impose numerical requirements or establish a numerical order.

[0022] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0023] In this application, "at least one" means one or more, and "more than one" means two or more. "One or more", "at least one of the following", or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c", or "at least one of a, b, and c", can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0024] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the referred range.

[0025] In this application, aromatic groups, aromatic families, and aromatic ring systems have the same meaning and can be used interchangeably.

[0026] In this application, heteroaromatic groups, heteroaromatic families, and heteroaromatic ring systems have the same meaning and can be used interchangeably.

[0027] In this application, "substituted or unsubstituted" means that the defined group may or may not be substituted. It is understood that when the group is substituted by a substituent, the number of substituents may be one, two, three or more, and when the number of substituents is two or more, the substituents may be the same or different.

[0028] In this application, "ring atom number" refers to the number of ring atoms constituting the ring itself in a cyclic compound (e.g., a monocyclic or polycyclic compound) obtained by atomic bonding, i.e., the number of atoms forming the ring. When the ring is substituted by a substituent, the atoms contained in the substituent are not included in the ring atom count. The same applies to the "ring atom number" described below unless otherwise specified. For example, the benzene ring has 6 ring atoms, the naphthalene ring has 10 ring atoms, and the thiophene group has 5 ring atoms.

[0029] In this application, "aryl or aromatic group" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing one hydrogen atom. It can be a monocyclic aryl, a fused-ring aryl, or a polycyclic aryl, and for polycyclic rings, at least one is an aromatic ring system. For example, "substituted or unsubstituted aryl having 6 to 40 ring atoms" means an aryl containing 6 to 40 ring atoms, and the aryl may optionally be further substituted. Preferably, it is a substituted or unsubstituted aryl having 6 to 30 ring atoms; more preferably, it is a substituted or unsubstituted aryl having 6 to 18 ring atoms; particularly preferably, it is a substituted or unsubstituted aryl having 6 to 14 ring atoms, and the aryl may optionally be further substituted. Suitable examples include, but are not limited to, phenyl, biphenyl, terphenyl, naphthyl, anthracene, phenanthrene, fluoranyl, triphenylene, pyrene, perylene, tetraphenyl, fluorenyl, dinaphthylphenyl, acenaphthyl, and their derivatives. Understandably, multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N, or O atoms), specifically acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, and diaryl ether systems should also be included in the definition of aryl.

[0030] In this application, "heteroaryl or heteroaromatic group" refers to an aryl group in which at least one carbon atom is replaced by a non-carbon atom, which can be an N atom, O atom, S atom, Si atom, P atom, etc. For example, "substituted or unsubstituted heteroaryl group having 5 to 60 ring atoms" refers to a heteroaryl group having 5 to 60 ring atoms, preferably a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, more preferably a substituted or unsubstituted heteroaryl group having 5 to 18 ring atoms, and particularly preferably a substituted or unsubstituted heteroaryl group having 5 to 14 ring atoms, and the heteroaryl group may optionally be further substituted; suitable examples include, but are not limited to: thiophene, furanyl, pyrrole, diazolyl, triazolyl, imidazole, pyridyl, bipyridyl, pyrimidinyl, etc. Triazinyl, acridineyl, pyridazinyl, pyrazinyl, quinolinyl, isoquinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridinylpyrimidineyl, pyridinylpyrazinyl, benzothiopheneyl, benzofuranyl, indolyl, pyrroloimidazolyl, pyrrolopyrrololyl, thienopyrrololyl, thienopyrrololyl, furanolololyl, furanolofuranyl, thienofuranyl, benzoisoxazolyl, benzoisothiazolyl, benzoimidazolyl, o-diazonyl, phenanthridineyl, primidyl, quinazolinoneyl, dibenzothiopheneyl, dibenzofuranyl, carbazoleyl and their derivatives.

[0031] In this application, "alkyl" can mean straight-chain, branched, and / or cyclic alkyl. The number of carbon atoms in an alkyl group can be 1 to 30, 1 to 25, 1 to 20, 1 to 15, 1 to 10, or 1 to 6. Phrases containing this term, such as "C 1-9"Alkyl" refers to an alkyl group containing 1 to 9 carbon atoms, and each time it appears, it can independently be a C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, or C9 alkyl. Non-limiting examples of alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, etc. tert-amyl, cyclopentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, cyclohexyl, 4-methylcyclohexyl, 4-tert-butylcyclohexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyloctyl, 2-hexyloctyl The compounds include 3,7-dimethyloctyl, cyclooctyl, n-nonyl, n-decyl, adamantyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl, n-undecyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecanyl, n-hexadecyl, 2-ethylhexadecyl, 2-butylhexadecyl, 2-hexylhexadecyl, 2-octylhexadecyl, n-hepta ...

[0032] In this application, "alkoxy" refers to a group with the structure "-O-alkyl", that is, an alkyl group as defined above that is attached to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to: methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt), tert-butoxy (-OC(CH3)3 or -OtBu), and n-hexyloxy (-O-C6H). 13 ), n-Decaalkoxy (-OC) 10 H 21 ), n-dodecyloxy (-OC) 12 H 25 ).

[0033] "alkylthiol" refers to a group with the structure "-S-alkyl", that is, an alkyl group as defined above that is attached to other groups via a sulfur atom. Suitable examples of phrases containing this term include, but are not limited to: methylthio (-S-CH3 or -SMe), ethylthio (-S-CH2CH3 or -SEt), tert-butylthio (-SC(CH3)3 or -StBu), and n-hexanethio (-S-C6H). 13 ), n-Decadecylthio (-SC) 10 H 21 ), n-Dodecylthio (-SC) 12 H 25 Similarly, "aryl thiol" refers to a group with the structure "-S-aryl", and "heteroaryl thiol" refers to a group with the structure "-S-heteroaryl".

[0034] In this application, "aryloxy group" refers to a group with the structure "-O-aryl", that is, an aryl group as defined above that is attached to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to, phenoxy, naphthoxy, etc.

[0035] In this application, amino represents -NR 1 R 2 , where R 1 R 2 Each can independently represent H or alkyl. That is, amino can refer to -NH2, -NH (substituted or unsubstituted alkyl), or -N (substituted or unsubstituted alkyl).

[0036] In this application, "arylamino" refers to a group with the structure "-NR-aryl" or "-N-aryl (aryl)", that is, an aryl group as defined above is attached to other groups via an N atom, for example... "Heteroarylene amino" refers to a group with the structure "-NR-heteroaryl" or "-N-heteroaryl (heteroaryl)", that is, a heteroaryl group as defined above is attached to other groups via an N atom.

[0037] In this application, "ammonium ion" represents NH4 + "Halogen" represents -Cl, -Br, -F or -I; hydroxyl group represents -OH; carboxyl group represents -COOH; nitro group represents -NO2; sulfonic acid group represents -SO3H; mercapto group represents -SH; cyano group represents *-C≡N.

[0038] In this application, "alkyl carbonyl" refers to a structure with the following structure: The group, "alkoxycarbonyl", refers to the structure with The group is denoted by R. Where R represents an alkyl group.

[0039] The technical solution of this application is as follows:

[0040] In a first aspect, embodiments of this application provide a nanomaterial comprising inorganic nanoparticles and polythiocarbonates attached to the inorganic nanoparticles, wherein the polythiocarbonate has the following structural formula:

[0041]

[0042] Where n1 is selected from integers from 1 to 5, and n2 is selected from integers from 1 to 5;

[0043] R1 and R2 are each independently selected from inorganic metal ions, ammonium ions, H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, acyl, and substituted or unsubstituted C1-C2 groups. 30 Alkyl, substituted or unsubstituted C1-C 30 Alkoxy, substituted or unsubstituted C1-C 30 Alkyl mercapto, substituted or unsubstituted C1-C 30 Alkylamine, substituted or unsubstituted C1-C 30 Alkyl carbonyl, substituted or unsubstituted C1-C 30 One or more of the following: alkoxycarbonyl, aryl with 6 to 60 substituted or unsubstituted ring atoms, heteroaryl with 5 to 60 substituted or unsubstituted ring atoms, arylamino with 6 to 60 substituted or unsubstituted ring atoms, aryloxy with 6 to 60 substituted or unsubstituted ring atoms, arylthiol with 6 to 60 substituted or unsubstituted ring atoms, heteroarylamino with 5 to 60 substituted or unsubstituted ring atoms, heteroaryloxy with 5 to 60 substituted or unsubstituted ring atoms, and heteroarylthiol with 5 to 60 substituted or unsubstituted ring atoms;

[0044] When R1 and R2 are substituted by substituents, each substituent is independently selected from D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, C1-C2. 30 Alkyl, C1-C 30 One or more of alkoxy groups and aryl groups having 6 to 30 ring atoms;

[0045] The heteroatoms in the heteroaryl group, the heteroaryloxy group, the heteroarylamino group, and the heteroarylthiol group are each independently selected from one or more of O, P, N, and S.

[0046] It should be noted that the polythiocarbonate is a ligand for the inorganic nanoparticles.

[0047] Polythiocarbonates possess self-healing capabilities, based on a photoinduced reactive root reaction. When a polythiocarbonate is exposed to light, one carbon-sulfur bond in its molecule breaks, generating two active roots with unpaired electrons. These roots are highly reactive and can react with other polythiocarbonate molecules to form new carbon-sulfur bonds, while simultaneously breaking the chemical bonds of other molecules and generating more roots. This chain reaction continues until the two roots meet and recombine.

[0048] The nanomaterials provided in this application employ polythiocarbonate ligands to modify inorganic nanoparticles. Polythiocarbonates can bind to the surface of inorganic nanoparticles, reducing surface defects and thus lowering the likelihood of non-radiative recombination. Polythiocarbonates possess self-healing capabilities, absorbing or dispersing ultraviolet light to protect the inorganic nanoparticles from photodegradation. The carbon-sulfur bonds in polythiocarbonate molecules can break and recombine under ultraviolet light irradiation, forming new chemical bonds, thereby enhancing the photostability of the inorganic nanoparticles. During long-term storage or operation, the broken polythiocarbonate ligands self-repair, improving the performance stability of the inorganic nanoparticles. Furthermore, polythiocarbonates can prevent the aggregation or decomposition of inorganic nanoparticles under high temperature or high humidity conditions, improving the stability of the inorganic nanoparticles to temperature and humidity.

[0049] In some embodiments, the mass ratio of the inorganic nanoparticles to the polythiocarbonate is 1:(1-10), for example, it can be 1:2, 1:3, 1:4, 1:5, 1:6, 1:7, 1:8, 1:9, or any range between two mass ratios. Within the range of the mass ratio, it is beneficial for the polythiocarbonate to fully utilize its self-healing and modifying abilities, thereby improving the stability of the inorganic nanoparticles.

[0050] n1 can be selected from 1, 2, 3, 4, 5. n2 can be selected from 1, 2, 3, 4, 5.

[0051] n1 and n2 can be the same or different.

[0052] It can be understood that when n1 is 1 and n2 is 1, the polythiocarbonate is a trithiocarbonate. When n1 is 2 and n2 is 1, the polythiocarbonate is a tetrathiocarbonate. When n1 is 2 and n2 is 2, the polythiocarbonate is a pentathiocarbonate.

[0053] In some embodiments, the inorganic metal ions are selected from alkali metal ions, alkaline earth metal ions, or transition metal ions.

[0054] Further, the alkali metal ions are selected from lithium ions, sodium ions, or potassium ions. The alkaline earth metal ions are selected from magnesium ions, calcium ions, strontium ions, or barium ions. The transition metal ions are selected from zinc ions or cadmium ions.

[0055] In some embodiments, R1 and R2 are each independently selected from inorganic metal ions, ammonium ions, H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, acyl, substituted or unsubstituted C1-C6 groups. 20 Alkyl, substituted or unsubstituted C1-C 20 Alkoxy, substituted or unsubstituted C1-C 20 Alkyl mercapto, substituted or unsubstituted C1-C 20 Alkylamine, substituted or unsubstituted C1-C 20 Alkyl carbonyl, substituted or unsubstituted C1-C 20 One or more of the following: alkoxycarbonyl, aryl with 6 to 30 substituted or unsubstituted ring atoms, heteroaryl with 5 to 30 substituted or unsubstituted ring atoms, arylamino with 6 to 30 substituted or unsubstituted ring atoms, aryloxy with 6 to 30 substituted or unsubstituted ring atoms, arylthiol with 6 to 30 substituted or unsubstituted ring atoms, heteroarylamino with 5 to 30 substituted or unsubstituted ring atoms, heteroaryloxy with 5 to 30 substituted or unsubstituted ring atoms, and heteroarylthiol with 5 to 30 substituted or unsubstituted ring atoms.

[0056] In some embodiments, R1 and R2 are each independently selected from inorganic metal ions, ammonium ions, H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, acyl, substituted or unsubstituted C1-C6 groups. 15 Alkyl, substituted or unsubstituted C1-C 15 Alkoxy, substituted or unsubstituted C1-C 15 Alkyl mercapto, substituted or unsubstituted C1-C 15 Alkylamine, substituted or unsubstituted C1-C 15 Alkyl carbonyl, substituted or unsubstituted C1-C 15 One or more of the following: alkoxycarbonyl, aryl with 6 to 18 substituted or unsubstituted ring atoms, heteroaryl with 5 to 18 substituted or unsubstituted ring atoms, arylamino with 6 to 18 substituted or unsubstituted ring atoms, aryloxy with 6 to 18 substituted or unsubstituted ring atoms, arylthiol with 6 to 18 substituted or unsubstituted ring atoms, heteroarylamino with 5 to 18 substituted or unsubstituted ring atoms, heteroaryloxy with 5 to 18 substituted or unsubstituted ring atoms, and heteroarylthiol with 5 to 18 substituted or unsubstituted ring atoms.

[0057] In some embodiments, R1 and R2 are each independently selected from inorganic metal ions, ammonium ions, H, D, amino, hydroxyl, carboxyl, cyano, acyl, substituted or unsubstituted C1-C6 groups. 15 Alkyl, substituted or unsubstituted C1-C15 Alkylamine, substituted or unsubstituted C1-C 15 Alkyl carbonyl, substituted or unsubstituted C1-C 10 One or more of alkoxycarbonyl, substituted or unsubstituted aryl groups having 6 to 18 ring atoms.

[0058] In some embodiments, when R1 and R2 are substituted by substituents, each substituent is independently selected from D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, C1-C1. 20 Alkyl, C1-C 20 One or more of alkoxy groups and aryl groups having 6 to 20 ring atoms.

[0059] In some embodiments, when R1 and R2 are substituted by substituents, each substituent is independently selected from D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, C1-C1. 15 Alkyl, C1-C 15 One or more of alkoxy groups and aryl groups having 6 to 15 ring atoms.

[0060] In some embodiments, when R1 and R2 are substituted by substituents, each substituent is independently selected from D, amino, hydroxyl, carboxyl, cyano, C1-C1. 15 One or more of the alkyl groups.

[0061] In some embodiments, R1 and R2 may be the same or different. It should be noted that R1 and R2 can be an inorganic metal ion or ammonium ion, and an organic group. For example, R1 may be an inorganic metal ion or ammonium ion, and R2 may be an organic group. Alternatively, R1 may be an organic group, and R2 may be an inorganic group ion or an ammonium ion.

[0062] In some embodiments, the polythiocarbonate includes one or more of inorganic polythiocarbonates and organic polythiocarbonates.

[0063] In some embodiments, the inorganic polythiocarbonate is selected from one or more of inorganic trithiocarbonate, inorganic tetrathiocarbonate, and inorganic pentathiocarbonate.

[0064] Furthermore, the inorganic trithiocarbonate is selected from lithium trithiocarbonate and sodium trithiocarbonate. One or more of the following: potassium trithiocarbonate, magnesium trithiocarbonate, calcium trithiocarbonate, strontium trithiocarbonate, barium trithiocarbonate, zinc trithiocarbonate, sodium trithiocadmium trithiocarbonate, and ammonium trithiocarbonate.

[0065] The inorganic tetrathiocarbonate is selected from lithium tetrathiocarbonate and sodium tetrathiocarbonate. One or more of potassium tetrathiocarbonate, calcium tetrathiocarbonate, barium tetrathiocarbonate, and ammonium tetrathiocarbonate.

[0066] The inorganic pentathiocarbonate is selected from sodium pentathiocarbonate. One or more of potassium pentathiocarbonate.

[0067] In some embodiments, the organic polythiocarbonate is selected from organic trithiocarbonates.

[0068] Furthermore, the organic trithiocarbonate is selected from bis(carboxymethyl)trithiocarbonate (CAS: 6326-83-6, ), cyanomethyl dodecyl carbonyl trithiocarbamate (CAS: 796045-97-1, S-(2-cyano-2-propyl)-S-dodecyl trithiocarbonyl ester (CAS: 870196-83-1) ), bis(carboxymethyl) trithiocarbonate (CAS: 6326-83-6, ), bis{4-[ethyl-(2-acetoxyethyl)carbamoyl]benzyl} trithiocarbonate (CAS: 6326-83-6, Sodium trithiocarbonate (CAS: 64773-45-1) ).

[0069] In some embodiments, the inorganic nanoparticles and the polythiocarbonate are connected by one or more of the following methods: physical adsorption, electrostatic force, and metal atom coordination.

[0070] In some embodiments, the inorganic nanoparticles include first quantum dots, N-type nanoparticles, or P-type nanoparticles.

[0071] It should be noted that the first quantum dot is a material conventionally used in the active layer 30 of optoelectronic device 100, the N-type nanoparticle is a material conventionally used in the electronic functional layer 40 of optoelectronic device 100, and the P-type nanoparticle is a material conventionally used in the hole functional layer 20 of optoelectronic device 100.

[0072] When the inorganic nanoparticles include a first quantum dot, the polythiocarbonate can improve the fluorescence quantum yield of the nanomaterial; when the inorganic nanoparticles include N-type nanoparticles, the polythiocarbonate can improve the electron mobility of the nanomaterial; when the inorganic nanoparticles include P-type nanoparticles, the polythiocarbonate can improve the hole mobility of the nanomaterial.

[0073] In some embodiments, the average particle size of the first quantum dot is 5 nm to 20 nm, for example, it can be 8 nm, 10 nm, 12 nm, 15 nm, 16 nm, 18 nm, or any range between two values. It should be noted that in this application, the particle size of the nanoparticles is measured by transmission electron microscopy (TEM).

[0074] In some embodiments, the average particle size of the N-type nanoparticles is 2nm to 10nm, for example, it can be 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm or any range between two values.

[0075] In some embodiments, the average particle size of the P-type nanoparticles is 2nm to 10nm, for example, it can be 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm or any range between two values.

[0076] In some embodiments, the first quantum dot may be selected from, but is not limited to, one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite quantum dots.

[0077] The materials for the single-structure quantum dots, the core material of the core-shell quantum dots, and the shell material of the core-shell quantum dots can be selected from, but are not limited to, one or more compounds from group II-VI, group IV-VI, group III-V, and group I-III-VI. The shell of the core-shell quantum dots can be one or more layers. The group II-VI compounds may be selected from, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds may be selected from, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The group III-V compounds may be selected from, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The group I-III-VI compounds may be selected from, but are not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0078] As an example, the core-shell structured quantum dots can be selected from, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. In the above descriptions of CdSe / ZnS, etc., the " / " indicates that the material after the " / " (as the shell) covers the material before the " / " (as the core).

[0079] The materials used for the perovskite quantum dots can be selected from, but are not limited to, doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors. The general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs. + Ion, M is selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, X is selected from Cl - ,Br - I - One or more of the following. The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, X is selected from Cl - ,Br - I - One or more of them.

[0080] In some embodiments, the N-type nanoparticles include one or more of a first doped metal oxide particle and a first undoped metal oxide particle. The material of the first undoped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide particle includes Al, Mg, Li, and Mg. One or more of Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga, wherein the doping amount of the doping element in the first doped metal oxide particle is 0.1wt% to 20wt%, for example, it can be 1wt%, 2wt%, 3wt%, 4wt%, 5wt%, 6wt%, 7wt%, 8wt%, 9wt%, 10wt%, 11wt%, 12wt%, 13wt%, 14wt%, 15wt%, 16wt%, 17wt%, 18wt%, 19wt%, or any range between two values.

[0081] In some embodiments, the P-type nanoparticles include one or more of a second doped metal oxide particle, a second undoped metal oxide particle, a metal sulfide, a metal selenide, and a metal nitride. The metal oxides in the second doped metal oxide particle and the second undoped metal oxide particle each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping element in the second doped metal oxide particle includes one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfide includes CuS, MoS3, WS3, Sb2S3, CoS, etc. One or more of In2S3, the metal selenide includes one or more of MoSe3, WSe3, Sb2Se3, CoSe, and In2Se3, the metal nitride includes p-type gallium nitride, wherein the doping amount of the dopant element in the second doped metal oxide particle is 0.1wt% to 20wt%, for example, it can be 1wt%, 2wt%, 3wt%, 4wt%, 5wt%, 6wt%, 7wt%, 8wt%, 9wt%, 10wt%, 11wt%, 12wt%, 13wt%, 14wt%, 15wt%, 16wt%, 17wt%, 18wt%, 19wt%, or any range between two values.

[0082] In some embodiments, the first quantum dot is further connected to a first ligand, the first ligand comprising one or more of the following: aliphatic amine ligands having 1 to 24 carbon atoms, fatty acid ligands having 1 to 24 carbon atoms, carboxyl ligands, phosphate ligands, halide ion ligands, thiol ligands having 1 to 24 carbon atoms, trialiphatic phosphine having 9 to 30 carbon atoms, triarylphosphine having 18 to 30 carbon atoms, trialiphatic phosphine oxide having 9 to 30 carbon atoms, and triarylphosphine oxide having 18 to 30 carbon atoms.

[0083] Furthermore, the aliphatic amine ligand having 1 to 24 carbon atoms includes one or more of oleylamine, n-decylamine, octylamine, dioctylamine, trioctylamine, dodecylamine, myristamine, palmitamine, and stearamine.

[0084] The fatty acid ligands having 1 to 24 carbon atoms include one or more of oleic acid, decanoic acid, caprylic acid, dicaprylic acid, tricaprylic acid, dodecanoic acid, myristic acid, palmitic acid, stearic acid, thioglycolic acid, and thiopropionic acid.

[0085] The carboxylate ligand is selected from one or more of magnesium carboxylate ligand, calcium carboxylate ligand, aluminum carboxylate ligand, zirconium carboxylate ligand, lithium carboxylate ligand, sodium carboxylate ligand, and barium carboxylate ligand; wherein the carboxylate ion in the carboxylate ligand is a fatty acid ion with 1 to 20 carbon atoms.

[0086] The phosphate ligand is selected from one or more of magnesium phosphate ligand, calcium phosphate ligand, aluminum phosphate ligand, zirconium phosphate ligand, lithium phosphate ligand, sodium phosphate ligand, and barium phosphate ligand.

[0087] The halide ion ligand is selected from one or more of fluoride ions, chloride ions, bromide ions, and iodide ions.

[0088] The thiol ligand having 1 to 24 carbon atoms is selected from one or more of 1,2-ethanedithiol, propanethiol, butanethiol, octylthiol, dodecanethiol, octadecylthiol, benzylthiol, 1,2-benzenethiol, 1,3-benzenethiol, and 1,4-benzenethiol.

[0089] The trialiphatic phosphine having 9 to 30 carbon atoms is selected from one or more of tripropylphosphine, tributylphosphine, tripentylphosphine, trihexylphosphine, triheptylphosphine, trioctylphosphine, trinonylphosphine, and tridecylphosphine.

[0090] The triarylphosphine having 18 to 30 carbon atoms is selected from one or more of triphenylphosphine, tri(m-toluene)phosphine, tri(2-toluene)phosphine, and tri(p-methylphenyl)phosphine.

[0091] The trialiphatic phosphine oxide with 9 to 30 carbon atoms is selected from one or more of tripropylphosphine oxide, tributylphosphine oxide, tripentylphosphine oxide, trihexylphosphine oxide, triheptylphosphine oxide, trioctylphosphine oxide, trinonylphosphine oxide, and tridecylphosphine oxide.

[0092] The triarylphosphine oxide having 18 to 30 carbon atoms is selected from one or more of triphenylphosphine oxide, tri(m-toluene)phosphine oxide, tri(2-toluene)phosphine oxide, and tri(p-methylphenyl)phosphine oxide.

[0093] In some embodiments, the N-type nanoparticles are further connected to a second ligand.

[0094] In some embodiments, the P-type nanoparticles are further connected to a third ligand.

[0095] Furthermore, the second ligand and the third ligand each independently include one or more of hydroxyl ligands, carboxyl ligands, and amine ligands.

[0096] In some embodiments, the hydroxyl ligand includes one or more of methanol, ethanol, propanol, butanol, octanol, pentanol, hexanol, heptanol, decanol, ethylene glycol, glycerol, propylene glycol, pentaerythritol, allyl alcohol, and vinyl alcohol.

[0097] In some embodiments, the carboxyl ligand includes one or more of acetic acid, maleic acid, benzoic acid, phenylacetic acid, phthalic acid, terephthalic acid, valeric acid, hexanoic acid, decanoic acid, oxalic acid, citric acid, tartaric acid, stearic acid, palmitic acid, oleic acid, and oxalic acid.

[0098] In some embodiments, the amine ligand includes one or more of o-phenylenediamine, m-phenylenediamine, ethylamine, ethylenediamine, methyl ethylamine, diethylamine, methyl ethyl isopropylamine, N,N-dimethylaniline, propylamine, aniline, diisopropylamine, triethanolamine, and tetrabutylammonium bromide.

[0099] In some embodiments, the mass ratio of the first quantum dot to the first ligand is 1:(0.1 to 1), for example, it can be 1:0.2, 1:0.3, 1:0.4, 1:0.5, 1:0.6, 1:0.7, 1:0.8, 1:0.9, or any range between two mass ratios. It is understood that the first ligand can be introduced during the synthesis of the first quantum dot, allowing for the control of the size and morphology of the first quantum dot, improving its fluorescence and stability. However, when introducing polythiocarbonate ligands, it is difficult to completely replace the first ligand, so the first quantum dot still contains the first ligand.

[0100] In some embodiments, the mass ratio of the N-type nanoparticles to the second ligand is 1:(0.1 to 1), for example, it can be 1:0.2, 1:0.3, 1:0.4, 1:0.5, 1:0.6, 1:0.7, 1:0.8, 1:0.9, or any range between two mass ratios. It is understood that the second ligand can be introduced during the synthesis of the N-type nanoparticles. However, it is difficult to completely replace the second ligand when introducing polythiocarbonate ligands, so the N-type nanoparticles still contain the second ligand.

[0101] In some embodiments, the mass ratio of the P-type nanoparticles to the third ligand is 1:(0.1 to 1), for example, it can be 1:0.2, 1:0.3, 1:0.4, 1:0.5, 1:0.6, 1:0.7, 1:0.8, 1:0.9, or any range between two mass ratios. It is understood that the third ligand can be introduced during the synthesis of the P-type nanoparticles. However, it is difficult to completely replace the third ligand when introducing polythiocarbonate ligands, so the P-type nanoparticles still contain the third ligand.

[0102] Please see Figure 1 This application provides a method for preparing nanomaterials, comprising the following steps:

[0103] S11. Provide an inorganic nanoparticle dispersion, wherein the inorganic nanoparticle dispersion contains inorganic nanoparticles;

[0104] S12. Provide a polythiocarbonate, and mix the polythiocarbonate with the inorganic nanoparticle dispersion to obtain nanomaterials.

[0105] In S11:

[0106] The inorganic nanoparticles include first quantum dots, N-type nanoparticles, or P-type nanoparticles. Inorganic nanoparticles and polythiocarbonates are described above and will not be repeated here.

[0107] It should be noted that the synthesis of the first quantum dot can be carried out using conventional methods in the field, such as organic phase synthesis, aqueous phase synthesis, hydrothermal method, solvothermal method, microwave-assisted hydrothermal method, microemulsion method, physical vapor deposition method, chemical vapor deposition method, sol-gel method, precipitation method, epitaxial growth method, electric field confinement method, etc.

[0108] The synthesis of N-type and P-type inorganic nanoparticles can be achieved using conventional methods in the field, such as physical, chemical, or other methods. Physical methods include mechanical ball milling, physical pulverization, and vacuum condensation. Chemical methods include chemical reduction, photochemical methods, sol-gel methods, radiation reduction, coprecipitation, and combustion synthesis. Other methods include coagulation, explosion, high-energy processing, hydrothermal synthesis, injection synthesis, and ionization evaporation precipitation.

[0109] In some embodiments, when the inorganic nanoparticles in the inorganic nanoparticle dispersion are the first quantum dots, a fourth ligand is also attached to the first quantum dots.

[0110] In some embodiments, when the inorganic nanoparticles in the inorganic nanoparticle dispersion are N-type nanoparticles, a fifth ligand is also attached to the N-type nanoparticles.

[0111] In some embodiments, when the inorganic nanoparticles in the inorganic nanoparticle dispersion are P-type nanoparticles, a sixth ligand is also attached to the P-type nanoparticles.

[0112] It should be noted that the synthesis of the first quantum dot introduces a fourth ligand onto its surface. The synthesis of N-type nanoparticles introduces a fifth ligand onto their surface. The synthesis of P-type nanoparticles introduces a sixth ligand onto their surface.

[0113] The material of the fourth ligand can be referred to the first ligand above, the material of the fifth ligand can be referred to the second ligand above, and the material of the sixth ligand can be referred to the third ligand above, and will not be repeated here.

[0114] In some embodiments, when the inorganic nanoparticles in the inorganic nanoparticle dispersion are the first quantum dots, the mass ratio of the first quantum dots to the fourth ligand is 1:(1 to 10), for example, it can be 1:2, 1:3, 1:4, 1:5, 1:6, 1:7, 1:8, 1:9 or any range between two mass ratios.

[0115] In some embodiments, when the inorganic nanoparticles in the inorganic nanoparticle dispersion are N-type nanoparticles, the mass ratio of the N-type nanoparticles to the fifth ligand is 1:(1 to 10), for example, it can be 1:2, 1:3, 1:4, 1:5, 1:6, 1:7, 1:8, 1:9 or any range between two mass ratios.

[0116] In some embodiments, when the inorganic nanoparticles in the inorganic nanoparticle dispersion are P-type nanoparticles, the mass ratio of the P-type nanoparticles to the sixth ligand is 1:(1 to 10), for example, it can be 1:2, 1:3, 1:4, 1:5, 1:6, 1:7, 1:8, 1:9 or any range between two mass ratios.

[0117] In some embodiments, the mass concentration of the inorganic nanoparticles in the dispersion is between 20 mg / mL and 40 mg / mL, for example, it can be 21 mg / mL, 22 mg / mL, 23 mg / mL, 24 mg / mL, 25 mg / mL, 26 mg / mL, 27 mg / mL, 28 mg / mL, 29 mg / mL, 30 mg / mL, 31 mg / mL, 32 mg / mL, 33 mg / mL, 34 mg / mL, 35 mg / mL, 36 mg / mL, 37 mg / mL, 38 mg / mL, 39 mg / mL, or any range between two values. Within this mass concentration range, uniform dissolution and dispersion of the inorganic nanoparticles is beneficial.

[0118] In some embodiments, the inorganic nanoparticle dispersion further includes a solvent.

[0119] The solvent may be a polar solvent or a non-polar solvent.

[0120] Furthermore, when the inorganic nanoparticles are the first quantum dots, the solvent includes the non-polar solvent, which includes one or more of n-octane, isooctane, n-hexane, cyclohexane, ethyl acetate, benzene, toluene, carbon tetrachloride, dimethyl ether, and tetraethylene glycol dimethyl ether.

[0121] When the inorganic nanoparticles are N-type nanoparticles or P-type nanoparticles, the solvent includes the polar solvent, which includes one or more of methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0122] In S12:

[0123] In some embodiments, the mass ratio of the inorganic nanoparticles to the polythiocarbonate is 1:(3-20), for example, it can be 1:3, 1:5, 1:8, 1:10, 1:12, 1:15, 1:18, 1:20, or any range between two mass ratios. Within the range of the mass ratio, it is beneficial for the polythiocarbonate to fully contact and react with the inorganic nanoparticles, and to be properly positioned on the inorganic nanoparticles.

[0124] In some embodiments, the mixing temperature of the polythiocarbonate and the inorganic nanoparticle dispersion is 60°C to 120°C, for example, 70°C, 80°C, 90°C, 100°C, 110°C, or any range between two values; the mixing time is 30 to 60 minutes, for example, 35 minutes, 40 minutes, 45 minutes, 50 minutes, 55 minutes, or any range between two values. Under these mixing conditions, the polythiocarbonate and the inorganic nanoparticles interact and connect through physical adsorption, electrostatic forces, metal atom coordination, etc., improving the performance of the inorganic nanoparticles and increasing the yield of nanomaterials.

[0125] In some embodiments, the mixture of the polythiocarbonate and the inorganic nanoparticle dispersion further includes ultraviolet (UV) treatment. More specifically, the intensity of the UV light used in the UV treatment is 20 mW / cm². 2 ~150mW / cm 2 For example, it can be 30mW / cm 2 40mW / cm 2 50mW / cm 2 60mW / cm 2 70mW / cm 2 80mW / cm 2 90mW / cm 2 100mW / cm 2 110mW / cm 2 120mW / cm 2 130mW / cm 2 140mW / cm 2 The wavelength of the ultraviolet light used for ultraviolet treatment is 200nm to 400nm, for example, 220nm, 250nm, 280nm, 300nm, 320nm, 350nm, 380nm, or any range between two values; the duration of the ultraviolet treatment is 10min to 30min, for example, 12min, 15min, 18min, 20min, 22min, 25min, 28min, or any range between two values. Under these ultraviolet treatment conditions, it is beneficial for the original ligands (fourth, fifth, or sixth ligands) on the surface of the inorganic nanoparticles to detach, thereby promoting the attachment of polythiocarbonates to the surface of the inorganic nanoparticles.

[0126] It should be noted that the ultraviolet treatment can be carried out at the temperature at which the above-mentioned polythiocarbonate and inorganic nanoparticle dispersions are mixed.

[0127] It should be further explained that the polythiocarbonate undergoes a displacement reaction with the original ligands (fourth ligand, fifth ligand, or sixth ligand) on the inorganic nanoparticles and is attached to the inorganic nanoparticles. Some of the original ligands that are not replaced are still attached to the inorganic nanoparticles, namely the first ligand, second ligand, and third ligand in the first aspect.

[0128] Secondly, embodiments of this application also provide a thin film, the material of which includes the nanomaterials described above, or nanomaterials prepared by the preparation methods described above.

[0129] The thin film can be prepared using conventional techniques in the art, such as chemical or physical methods. Chemical methods include chemical vapor deposition, continuous ion layer adsorption and reaction, electrolytic deposition, and co-precipitation. Physical methods include physical deposition and solution methods. Physical deposition methods include thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; solution methods include spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spraying, roller coating, casting, slot coating, and strip coating, etc.

[0130] The inorganic nanoparticles include first quantum dots, N-type nanoparticles, or P-type nanoparticles.

[0131] It is understood that when the inorganic nanoparticles include the first quantum dot, the thin film is a light-emitting thin film, i.e., the active layer 30 in the optoelectronic device 100. In this case, the thickness of the thin film can be 10 nm to 50 nm, for example, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, or any range between two values. The thin film exhibits a high fluorescence quantum yield.

[0132] When the inorganic nanoparticles include the N-type nanoparticles, the thin film is an electron transport thin film, i.e., the electronic functional layer 40 in the optoelectronic device 100. In this case, the thickness of the thin film can be from 10 nm to 60 nm, for example, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, or any range between two values. The thin film exhibits high electron mobility.

[0133] When the inorganic nanoparticles include the p-type nanoparticles, the thin film is a hole transport thin film, i.e., the hole functional layer 20 in the optoelectronic device 100. In this case, the thickness of the thin film can be 20 nm to 100 nm, for example, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, or any range between two values. The thin film has a high hole mobility.

[0134] Thirdly, please refer to Figure 2 This application also provides an optoelectronic device 100, which includes an anode 10, a functional layer and a cathode 50 stacked together. The material of the functional layer includes the above-mentioned nanomaterials, or nanomaterials prepared by the above-mentioned preparation method, or the functional layer includes the above-mentioned thin film.

[0135] In some embodiments, the functional layer includes one or more of a hole functional layer 20, an active layer 30, and an electronic functional layer 40, wherein the hole functional layer 20 is located between the anode 10 and the active layer 30, and the electronic functional layer 40 is located between the active layer 30 and the cathode 50; at least one of the hole functional layer 20, the active layer 30, and the electronic functional layer 40 is made of the nanomaterial.

[0136] The hole functional layer 20 includes one or more of a hole injection layer and a hole transport layer.

[0137] The electronic functional layer 40 includes one or more of an electron injection layer and an electron transport layer.

[0138] In some embodiments, the inorganic nanoparticles include first quantum dots, N-type nanoparticles, or P-type nanoparticles.

[0139] It should be noted that when the hole functional layer 20 includes the nanomaterial, the inorganic nanoparticles in the nanomaterial include the P-type nanoparticles. When the active layer 30 includes the nanomaterial, the inorganic nanoparticles in the nanomaterial include the first quantum dot. When the electronic functional layer 40 includes the nanomaterial, the inorganic nanoparticles in the nanomaterial include the N-type nanoparticles.

[0140] It should be further noted that when the materials of the hole functional layer 20 and / or the electron functional layer 40 include the nanomaterials, the material of the active layer 30 may include the aforementioned nanomaterials, or it may include organic light-emitting materials or second quantum dot materials. Furthermore, the organic light-emitting material may be selected from, but is not limited to, one or more of the following: CBP:Ir(mppy)3(4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III)]), TCTX:Ir(mmpy)(4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium(III)]), diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delayed) materials, polymers containing BN covalent bonds, HLCT (hybridized local charge transfer excited state) materials, and Exciplex (excitoplex) light-emitting materials.

[0141] The second quantum dot may be selected from, but is not limited to, one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite quantum dots.

[0142] The materials for the single-structure quantum dots, the core material of the core-shell quantum dots, and the shell material of the core-shell quantum dots can be independently selected from one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The shell of the core-shell quantum dots can be one or more layers. The group II-VI compounds may be selected from, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds may be selected from, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The group III-V compounds may be selected from, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The group I-III-VI compounds may be selected from, but are not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0143] As an example, the core-shell structured quantum dots can be selected from, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. In the above descriptions of CdSe / ZnS, etc., the " / " indicates that the material after the " / " (as the shell) covers the material before the " / " (as the core).

[0144] The materials used for the perovskite quantum dots can be selected from, but are not limited to, doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors. The general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs. + Ion, M is selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, X is selected from Cl - ,Br - I - One or more of the following. The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, X is selected from Cl - ,Br - I - One or more of them.

[0145] When the material of the hole functional layer 20 and / or the active layer 30 includes the nanomaterial, the material of the electronic functional layer 40 may include the aforementioned nanomaterial, or may include organic N-type semiconductor materials or inorganic N-type semiconductor materials. The organic N-type semiconductor materials include 8-hydroxyquinoline aluminum, 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, 4,7-diphenyl-1,10-o-diazaphenanthroline, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum, and 2,2'-(1,3-phenyl)bis[5-(4-tert-butylphenyl)- ... [Butylphenyl)-1,3,4-oxadiazole], tris[2,4,6-trimethyl-3-(3-pyridyl)phenyl]borane, tetra[(m-pyridyl)-phenyl-3-yl]biphenyl, 3,3'-[5'-[3-(3-pyridyl)phenyl][1,1':3',1”-terphenyl]-3,3”-diyl]dipyridine, 1,3-bis(3,5-dipyridin-3-ylphenyl)benzene, n,n′-bis(naphthyl-1-yl)-n,n′-bis(phenyl)benzidine, and diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide, or one or more of these. The inorganic N-type semiconductor material includes one or more of third-doped metal oxide particles and third-undoped metal oxide particles. The third-undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the third-doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the third-doped metal oxide particles include Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, and In. One or more of Ga, wherein the doping amount of the doping element in the third doped metal oxide particle is 0.1wt% to 20wt%, and the doping amount of the doping element in the third doped metal oxide particle is 0.1wt% to 20wt%, for example, it can be 1wt%, 2wt%, 3wt%, 4wt%, 5wt%, 6wt%, 7wt%, 8wt%, 9wt%, 10wt%, 11wt%, 12wt%, 13wt%, 14wt%, 15wt%, 16wt%, 17wt%, 18wt%, 19wt%, or any range between two values.

[0146] When the materials of the electronic functional layer 40 and / or the active layer 30 include the nanomaterials, the material of the hole functional layer 20 may include the aforementioned nanomaterials, or it may include organic p-type semiconductor materials or inorganic p-type semiconductor materials. Further, the organic p-type semiconductor material includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-di(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine 4,4',4'-tris(N-carbazole)-triphenylamine, 4,4',4'-tris(carbazole-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzanphenanthrene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly( 4-Butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-)phenylenevinylene, poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N' N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthyl-1-yl)-N,N'-diphenylbenzidine, spironolactone (NPB), nanocrystalline diamond, microcrystalline cellulose and tetracyanoquinone dimethane, doped graphene, and undoped graphene are among one or more of these.The inorganic P-type semiconductor material comprises one or more of the following: fourth-doped metal oxide particles, fourth-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the fourth-doped and fourth-undoped metal oxide particles each independently comprise one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping element in the fourth-doped metal oxide particles comprises one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfides comprise one or more of CuS, MoS3, WS3, Sb2S3, CoS, and In2S3. The metal selenides comprise M... The metal nitride comprises one or more of oSe3, WSe3, Sb2Se3, CoSe, and In2Se3, including p-type gallium nitride. The doping amount of the dopant element in the fourth doped metal oxide particle is 0.1 wt% to 20 wt%, for example, it can be 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%, or any range between two values.

[0147] In some embodiments, the active layer 30 includes a light-emitting layer.

[0148] In some embodiments, the optoelectronic device 100 includes a light-emitting diode.

[0149] In some embodiments, the anode 10 and the cathode 50 each independently include a metal electrode, a carbon electrode, a doped or undoped metal oxide electrode, and a composite electrode; wherein, the material of the metal electrode is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Ni, Ir, and Mg; the material of the carbon electrode is selected from one or more of graphite, carbon nanotubes, graphene, and carbon fibers; and the material of the doped or undoped metal oxide electrode is selected from ITO, FTO, ATO, AZO, GZO, IZO, MZO, and IT. The composite electrode material is selected from one or more of ZO, ICO, AMO, SnO2, In2O3, Cd:ZnO, F:SnO2, In:SnO2, and Ga:SnO2; the composite electrode material is selected from one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, and ZnS / Al / ZnS. Here, " / " indicates a stacked structure; for example, the composite electrode AZO / Ag / AZO represents a three-layer stacked composite structure consisting of an AZO layer, an Ag layer, and an AZO layer.

[0150] Furthermore, the anode 10 includes a doped or undoped metal oxide electrode. The cathode 50 includes a metal electrode.

[0151] Fourthly, embodiments of this application also provide a display device, which includes the aforementioned optoelectronic device 100.

[0152] The display device can be any electronic product with display function, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among them, smart wearable devices can be, for example, smart bracelets, smartwatches, virtual reality (VR) headsets, etc.

[0153] The present application will be specifically described below through specific embodiments. The following embodiments are only some embodiments of the present application and are not intended to limit the present application.

[0154] Nanomaterials and Thin Films Example 1

[0155] This embodiment provides a nanomaterial and a thin film made of nanomaterials. The nanomaterials include CdZnSe / CdZnS / ZnS quantum dots and sodium trithiocarbonate polythiocarbonate connected to the surface of the quantum dots. The mass ratio of quantum dots to sodium trithiocarbonate is 1:5. The preparation method includes:

[0156] A quantum dot dispersion with a mass concentration of 20 mg / mL was provided and stirred at 1000 rpm. The quantum dot dispersion contained CdZnSe / CdZnS / ZnS quantum dots and n-octane solvent. Sodium trithiocarbonate was added to the quantum dot dispersion at a mass ratio of 1:10 (quantum dots to sodium trithiocarbonate) at 80°C. The mixture was then irradiated with 300 nm ultraviolet light for 30 min at an intensity of 80 mW / cm². 2 Continue the reaction at 80℃ for 15 minutes to obtain a solution;

[0157] The solution was spin-coated onto the substrate at a speed of 1500 r / min, and then annealed at 100°C for 5 min to form a thin film with a thickness of 25 nm. The material of the thin film included nanomaterials.

[0158] Nanomaterials and Thin Films Example 2

[0159] This embodiment is basically the same as Embodiment 1, except that sodium trithiocarbonate is replaced with sodium tetrathiocarbonate in this embodiment.

[0160] Nanomaterials and Thin Films Example 3

[0161] This embodiment is basically the same as Embodiment 1, except that sodium trithiocarbonate is replaced with sodium pentathiocarbonate in this embodiment.

[0162] Nanomaterials and Thin Films Example 4

[0163] This embodiment is basically the same as Embodiment 1, except that sodium trithiocarbonate is replaced with sodium butyl trithiocarbonate in this embodiment.

[0164] Nanomaterials and Thin Films Example 5

[0165] This embodiment is basically the same as Embodiment 1, except that the CdZnSe / CdZnS / ZnS quantum dots are replaced with InP / ZnSeS / ZnS in this embodiment.

[0166] Nanomaterials and Thin Films Example 6

[0167] This embodiment is basically the same as Embodiment 1, except that in this embodiment, sodium trithiocarbonate is added to the quantum dot dispersion at a mass ratio of 1:20 for quantum dots and sodium trithiocarbonate, and the mass ratio of quantum dots to sodium trithiocarbonate in the nanomaterial is 1:10.

[0168] Nanomaterials and Thin Films Example 7

[0169] This embodiment is basically the same as Embodiment 1, except that in this embodiment, sodium trithiocarbonate is added to the quantum dot dispersion at a mass ratio of 1:3 for quantum dots to sodium trithiocarbonate, and the mass ratio of quantum dots to sodium trithiocarbonate is 1:1.

[0170] Nanomaterials and Thin Films Example 8

[0171] This embodiment is basically the same as Embodiment 1, except that the reaction temperature between quantum dots and sodium trithiocarbonate is 120°C in this embodiment.

[0172] Nanomaterials and Thin Films Example 9

[0173] This embodiment is basically the same as Embodiment 1, except that the reaction temperature between the quantum dots and sodium trithiocarbonate is 60°C in this embodiment.

[0174] Nanomaterials and Thin Films Example 10

[0175] This embodiment is basically the same as Embodiment 1, except that in this embodiment, sodium trithiocarbonate is replaced with bis(carboxymethyl)trithiocarbonate.

[0176] Nanomaterials and Thin Films Example 11

[0177] This embodiment is basically the same as Embodiment 1, except that sodium trithiocarbonate is replaced with cyanomethyl dodecyl carbonyl trithiocarbamate in this embodiment.

[0178] Nanomaterials and Thin Films Example 12

[0179] This embodiment is basically the same as Embodiment 10, except that in this embodiment, bis(carboxymethyl)trithiocarbonate is added to the quantum dot dispersion at a mass ratio of 1:20, and the mass ratio of quantum dots to bis(carboxymethyl)trithiocarbonate is 1:10.

[0180] Nanomaterials and Thin Films Example 13

[0181] This embodiment is basically the same as Embodiment 10, except that in this embodiment, bis(carboxymethyl)trithiocarbonate is added to the quantum dot dispersion at a mass ratio of 1:3, and the mass ratio of quantum dots to bis(carboxymethyl)trithiocarbonate is 1:1.

[0182] Nanomaterials and Thin Films Example 14

[0183] This embodiment provides a nanomaterial and a thin film made of nanomaterials. The nanomaterials include N-type nanoparticles ZnO and sodium trithiocarbonate (a polythiocarbonate) attached to the surface of ZnO. The mass ratio of ZnO to sodium trithiocarbonate is 1:5. The preparation method includes:

[0184] A dispersion of N-type nanoparticles with a mass concentration of 20 mg / mL was provided and stirred at 1000 rpm. The N-type nanoparticle dispersion contained ZnO and ethanol solvent. Sodium trithiocarbonate was added to the N-type nanoparticle dispersion at 80°C at a mass ratio of ZnO to sodium trithiocarbonate of 1:10. The dispersion was then irradiated with 300 nm wavelength ultraviolet light for 30 min, with an ultraviolet light intensity of 80 mW / cm². 2 Continue the reaction at 80℃ for 15 minutes to obtain a solution;

[0185] The solution was spin-coated onto the substrate at a speed of 4000 rpm and annealed at 80°C for 10 min to form a thin film with a thickness of 30 nm. The material of the thin film included nanomaterials.

[0186] Nanomaterials and Thin Films Example 15

[0187] This embodiment is basically the same as Embodiment 1, except that sodium trithiocarbonate is replaced with zinc tetrathiocarbonate in this embodiment.

[0188] Nanomaterials and Thin Films Example 16

[0189] This embodiment is basically the same as embodiment 14, except that in this embodiment, sodium trithiocarbonate is added to the N-type nanoparticle dispersion at a mass ratio of ZnO to sodium trithiocarbonate of 1:20, and the mass ratio of ZnO to sodium trithiocarbonate in the nanomaterial is 1:10.

[0190] Nanomaterials and Thin Films Example 17

[0191] This embodiment is basically the same as embodiment 14, except that in this embodiment, sodium trithiocarbonate is added to the N-type nanoparticle dispersion at a mass ratio of ZnO to sodium trithiocarbonate of 1:3, and the mass ratio of ZnO to sodium trithiocarbonate in the nanomaterial is 1:1.

[0192] Nanomaterials and Thin Films Example 18

[0193] This embodiment is basically the same as embodiment 14, except that in this embodiment, sodium trithiocarbonate is replaced with bis(carboxymethyl)trithiocarbonate.

[0194] Nanomaterials and Thin Films Example 19

[0195] This embodiment is basically the same as that of embodiment 14, except that in this embodiment, sodium trithiocarbonate is replaced with S-(2-cyano-2-propyl)-S-dodecyl trithiocarbonate.

[0196] Nanomaterials and Thin Films Example 20

[0197] This embodiment is basically the same as Embodiment 18, except that in this embodiment, bis(carboxymethyl)trithiocarbonate is added to the N-type nanoparticle dispersion at a mass ratio of ZnO to bis(carboxymethyl)trithiocarbonate of 1:20, and the mass ratio of ZnO to bis(carboxymethyl)trithiocarbonate in the nanomaterial is 1:10.

[0198] Nanomaterials and Thin Films Example 21

[0199] This embodiment is basically the same as Embodiment 18, except that in this embodiment, bis(carboxymethyl)trithiocarbonate is added to the N-type nanoparticle dispersion at a mass ratio of ZnO to bis(carboxymethyl)trithiocarbonate of 1:3, and the mass ratio of ZnO to bis(carboxymethyl)trithiocarbonate in the nanomaterial is 1:1.

[0200] Nanomaterials and Thin Films Example 22

[0201] This embodiment provides a nanomaterial and a thin film made of nanomaterials. The nanomaterials include p-type nanoparticles NiO and sodium trithiocarbonate (ZnO) attached to the surface of NiO. The mass ratio of ZnO to sodium trithiocarbonate is 1:5. The preparation method includes:

[0202] A dispersion of P-type nanoparticles with a mass concentration of 20 mg / mL was provided and stirred at 1000 rpm. The dispersion contained NiO and ethanol solvent. Sodium trithiocarbonate was added to the dispersion at 80°C at a mass ratio of NiO to sodium trithiocarbonate of 1:10. The dispersion was then irradiated with 300 nm ultraviolet light for 30 min, with an ultraviolet light intensity of 80 mW / cm². 2 Continue the reaction at 80℃ for 15 minutes to obtain a solution;

[0203] The solution was spin-coated onto the substrate at a speed of 3000 rpm for 30 seconds, followed by annealing at 100°C for 15 minutes to form a thin film with a thickness of 50 nm. The material of the thin film included nanomaterials.

[0204] Nanomaterials and Thin Films Example 23

[0205] This embodiment is basically the same as embodiment 22, except that in this embodiment, sodium trithiocarbonate is replaced with barium tetrathiocarbonate.

[0206] Nanomaterials and Thin Films Example 24

[0207] This embodiment is basically the same as embodiment 22, except that in this embodiment, sodium trithiocarbonate is added to the P-type nanoparticle dispersion at a mass ratio of NiO to sodium trithiocarbonate of 1:20, and the mass ratio of NiO to sodium trithiocarbonate in the nanomaterial is 1:10.

[0208] Nanomaterials and Thin Films Example 25

[0209] This embodiment is basically the same as embodiment 22, except that in this embodiment, sodium trithiocarbonate is added to the P-type nanoparticle dispersion at a mass ratio of NiO to sodium trithiocarbonate of 1:3, and the mass ratio of NiO to sodium trithiocarbonate in the nanomaterial is 1:1.

[0210] Nanomaterials and Thin Films Example 26

[0211] This embodiment is basically the same as embodiment 22, except that in this embodiment, sodium trithiocarbonate is replaced with bis(carboxymethyl)trithiocarbonate.

[0212] Nanomaterials and Thin Films Example 27

[0213] This embodiment is basically the same as Embodiment 22, except that in this embodiment, sodium trithiocarbonate is replaced with bis{4-[ethyl-(2-acetoxyethyl)carbamoyl]benzyl}trithiocarbonate.

[0214] Nanomaterials and Thin Films Example 28

[0215] This embodiment is basically the same as embodiment 26, except that in this embodiment, bis(carboxymethyl)trithiocarbonate is added to the P-type nanoparticle dispersion at a mass ratio of NiO to bis(carboxymethyl)trithiocarbonate of 1:20, and the mass ratio of NiO to bis(carboxymethyl)trithiocarbonate in the nanomaterial is 1:10.

[0216] Nanomaterials and Thin Films Example 29

[0217] This embodiment is basically the same as embodiment 26, except that in this embodiment, bis(carboxymethyl)trithiocarbonate is added to the P-type nanoparticle dispersion at a mass ratio of 1:3 for NiO and bis(carboxymethyl)trithiocarbonate, and the mass ratio of NiO to bis(carboxymethyl)trithiocarbonate in the nanomaterial is 1:1.

[0218] Comparative Example 1 of Nanomaterials and Thin Films

[0219] This comparative example provides a nanomaterial and a thin film made of nanomaterials, the nanomaterials including CdZnSe / CdZnS / ZnS quantum dots, and the preparation method of the thin film includes:

[0220] A quantum dot dispersion with a mass concentration of 20 mg / mL was provided and stirred at a speed of 1000 rpm. The quantum dot dispersion contained CdZnSe / CdZnS / ZnS quantum dots and n-octane solvent. The quantum dot dispersion was spin-coated onto a substrate at a speed of 1500 r / min and annealed at 100 °C for 5 min to form a thin film with a thickness of 25 nm.

[0221] Comparative Example 2 of Nanomaterials and Thin Films

[0222] This comparative example is basically the same as Comparative Example 1, except that the CdZnSe / CdZnS / ZnS quantum dots are replaced with InP / ZnSeS / ZnS in this comparative example.

[0223] Comparative Example 3 of Nanomaterials and Thin Films

[0224] This comparative example provides a nanomaterial and a thin film made of nanomaterials, the nanomaterials including N-type nanoparticles ZnO, and the preparation method of the thin film includes:

[0225] A dispersion of N-type nanoparticles with a mass concentration of 20 mg / mL is provided and stirred at a speed of 1000 rpm. The N-type nanoparticle dispersion contains ZnO and ethanol solvent. The N-type nanoparticle dispersion is spin-coated onto a substrate at a speed of 4000 rpm and annealed at 80°C for 10 min to form a film with a thickness of 30 nm. The film material includes nanomaterials.

[0226] Comparative Example 4 of Nanomaterials and Thin Films

[0227] This comparative example provides a nanomaterial and a thin film made of nanomaterials, the nanomaterials including p-type nanoparticles NiO, and the preparation method of the thin film includes:

[0228] A P-type nanoparticle dispersion with a mass concentration of 20 mg / mL is provided and stirred at a speed of 1000 rpm. The N-type nanoparticle dispersion contains NiO and ethanol solvent. The N-type nanoparticle dispersion is spin-coated onto a substrate at a speed of 3000 rpm for 30 s. The substrate is then annealed at 100°C for 15 min to form a film with a thickness of 50 nm. The film material includes nanomaterials.

[0229] The fluorescence quantum yield, photostability, thermal stability, and humidity stability of the nanomaterials provided in Examples 1-13 and Comparative Examples 1-2 were tested, and the results are shown in Table 1.

[0230] Fluorescence quantum yield (PLQY) was measured using a steady-state fluorescence spectrometer from Edinburgh Instruments, model FS5, with the corresponding accessory SC-30 for measuring fluorescence quantum yield.

[0231] The photostability of the nanomaterial was measured at an intensity of 100 mW / cm. 2 The retention rate of PLQY before and after 1 hour of ultraviolet irradiation; the thermal stability of the nanomaterial was tested by measuring the retention rate of PLQY before and after 24 hours of placement at 60℃; the humidity stability of the nanomaterial was tested by measuring the retention rate of PLQY before and after 24 hours of placement in an 80% humidity environment.

[0232] Table 1

[0233]

[0234] From Table 1, we can obtain:

[0235] As can be seen from Examples 1-9 and Comparative Examples 1-2, modifying quantum dots with inorganic polythiocarbonates provided in this application can effectively improve the fluorescence quantum yield of quantum dots, and is beneficial to improving the ultraviolet light stability, thermal stability and humidity stability of quantum dots. It has a wide range of applications and is suitable for various types of quantum dots. Within the preferred range of reaction temperature and mass ratio of quantum dots and polythiocarbonates provided in this application, the overall performance of quantum dots is significantly improved.

[0236] As can be seen from Examples 10-13 and Comparative Example 1, the modification of quantum dots with organic polythiocarbonates can also improve the fluorescence quantum yield and stability of quantum dots, and has a significant improvement effect compared with the quantum dots of the comparative example.

[0237] The electron transport rate, light stability, thermal stability, and humidity stability of the thin films provided in Examples 14-21 and Comparative Example 3 of nanomaterials and thin films were tested, and the results are shown in Table 2.

[0238] The electron mobility test method is as follows: The current density-voltage curve of the thin film semiconductor device (single electron transport thin film device, EOD) is measured. The EOD structure is an anode / quantum dot emitting layer / electron transport layer / cathode. The electron transport layer is the thin film provided in Examples 14-21 and Comparative Example 3 of nanomaterials and thin films, respectively. The anode is ITO, the quantum dot emitting layer is CdZnSe / CdZnS / ZnS, and the cathode is Ag. The space charge confinement current (SCLC) region in the current density-voltage curve is obtained, and then the current is calculated according to the formula J = (9 / 8)ε. r ε0μ e V 2 / d 3 Calculate the electron mobility, where J represents the current density in mA / cm². -2;ε r ε₀ represents the relative permittivity, and μ represents the vacuum permittivity. e Electron mobility is expressed in cm. 2 V -1 s -1 V represents the driving voltage, with units of V; d represents the film thickness, with units of m.

[0239] The photostability of the thin film was measured at an intensity of 100 mW / cm. 2 The retention rate of electron mobility before and after 1 hour of ultraviolet irradiation; the thermal stability of the film is tested by the retention rate of electron mobility before and after 24 hours of placement at 60℃; the humidity stability of the film is tested by the retention rate of electron mobility before and after 24 hours of placement in an 80% humidity environment.

[0240] Table 2

[0241]

[0242] From Table 2, we can obtain:

[0243] As can be seen from Examples 14-17 and Comparative Example 3, the present application uses inorganic polythiocarbonate to modify N-type nanoparticles, which significantly improves the electron mobility of N-type nanoparticles and their stability under various environmental conditions such as ultraviolet light, high temperature, and high humidity.

[0244] As can be seen from Examples 18-21 and Comparative Example 3, organic polythiocarbonates, as ligands for N-type nanoparticles, can also improve the electron mobility, photostability, high-temperature stability, and high-humidity stability of N-type nanoparticles.

[0245] Hole transport rate, photostability, thermal stability and humidity stability of the thin films provided in Examples 22-29 and Comparative Example 4 of nanomaterials and thin films were tested, and the results are shown in Table 3.

[0246] The hole mobility test method is as follows: The current density-voltage curve of the thin-film semiconductor device (single hole transport thin-film device, HOD) is measured. The HOD structure is an anode / hole transport thin film / quantum dot emitting layer / cathode. The hole transport layer is the thin film provided in Examples 22-29 and Comparative Example 4 of nanomaterials and thin films, respectively. The anode is ITO, the quantum dot emitting layer is CdZnSe / CdZnS / ZnS, and the cathode is Ag. The space charge confinement current (SCLC) region in the current density-voltage curve is obtained. Then, the formula J = (9 / 8)ε is used. r ε0μ e V 2 / d 3 Calculate hole mobility, where J represents current density in mA / cm². -2 ;εr ε₀ represents the relative permittivity, and μ represents the vacuum permittivity. e This represents hole mobility, expressed in cm. 2 V -1 s -1 V represents the driving voltage, with units of V; d represents the film thickness, with units of m.

[0247] The photostability of the thin film was measured at an intensity of 100 mW / cm. 2 The retention rate of hole mobility before and after 1 hour of UV irradiation; the thermal stability of the film is measured by the retention rate of hole mobility before and after 24 hours of placement at 60℃; the humidity stability of the film is measured by the retention rate of hole mobility before and after 24 hours of placement in an 80% humidity environment.

[0248] Table 3

[0249]

[0250] From Table 3, we can obtain:

[0251] As can be seen from Examples 22-25 and Comparative Example 4, modifying P-type nanoparticles with inorganic polysulfonates can significantly improve the hole mobility of P-type nanoparticles. Even after being irradiated by ultraviolet light and placed in a high temperature and high humidity environment, they can still maintain a high hole mobility, indicating that inorganic polysulfonates significantly improve the stability of P-type nanoparticles.

[0252] As can be seen from Examples 26-29 and Comparative Example 4, organic polythiocarbonates can also significantly improve the hole mobility of P-type nanoparticles and the stability of their hole mobility under various environmental conditions.

[0253] Device Example 1

[0254] This embodiment of the device provides an optoelectronic device, the fabrication method of which is as follows:

[0255] Provide ITO glass, use a cotton swab dipped in a small amount of soapy water to wipe the ITO surface to remove visible impurities, then use deionized water, acetone, ethanol, and isopropanol for ultrasonic cleaning for 15 minutes, then blow dry with nitrogen gas and irradiate with UV for 15 minutes to form an ITO anode.

[0256] An ethanol solution of NiO was spin-coated onto an ITO anode at a speed of 3000 rpm for 30 s, followed by heating at 100 °C for 15 min to form a hole transport layer with a thickness of 50 nm.

[0257] The nanomaterials of Example 1 were prepared into a 40 mg / mL solution, which was placed on the hole transport layer and spin-coated at 1500 r / min to form a film. The film was then annealed at 100°C for 5 min to form a light-emitting layer with a thickness of 25 nm.

[0258] An ethanol solution of ZnO was spin-coated onto the luminescent layer at a spin speed of 4000 rpm, followed by heating at 80°C for 10 min to form an electron transport layer with a thickness of 30 nm.

[0259] In the electron transport layer, the Ag target is activated, and the Ag target... Evaporation at a rate that forms a cathode;

[0260] Packaging yields optoelectronic devices.

[0261] Device Examples 2-13

[0262] Device Examples 2-13 are basically the same as Device Example 1, except that the nanomaterials in Example 1 are replaced with the nanomaterials in Examples 2-13 to form a light-emitting layer and obtain optoelectronic devices.

[0263] Device Example 14

[0264] Device Example 14 is basically the same as Device Example 1, except that the nanomaterials in Device Example 1 are replaced with the nanomaterials in Comparative Example 1, and the ZnO in the electron transport layer is replaced with the nanomaterials in Device Example 14.

[0265] Device Examples 15-21

[0266] Device Examples 15-21 are basically the same as Device Example 14, except that the nanomaterials in Example 14 are replaced with the nanomaterials in Examples 15-21 to form an electron transport layer and obtain optoelectronic devices.

[0267] Device Example 22

[0268] Device Example 22 is basically the same as Device Example 1, except that the nanomaterials in Example 1 are replaced with the nanomaterials in Comparative Example 1, and the NiO in the hole transport layer is replaced with the nanomaterials in Example 22.

[0269] Device Examples 23-29

[0270] Device Examples 23-29 are basically the same as Device Example 22, except that the nanomaterials in Example 22 are replaced with the nanomaterials in Examples 23-29 to form a hole transport layer and obtain optoelectronic devices.

[0271] Device Example 30

[0272] Device Example 30 is basically the same as Device Example 1, except that the ZnO in the electron transport layer of Device Example 30 is replaced with the nanomaterial of Example 14.

[0273] Device Example 31

[0274] Device Example 31 is basically the same as Device Example 1, except that the NiO in the hole transport layer of Device Example 31 is replaced with the nanomaterial of Example 22.

[0275] Device Example 32

[0276] Device Example 32 is basically the same as Device Example 1, except that in Device Example 32, the nanomaterials of Example 1 are replaced with the nanomaterials of Comparative Example 1, the ZnO in the electron transport layer is replaced with the nanomaterials of Example 14, and the NiO in the hole transport layer is replaced with the nanomaterials of Example 22.

[0277] Device Example 33

[0278] Device Example 33 is basically the same as Device Example 1, except that in Device Example 33, ZnO in the electron transport layer is replaced with the nanomaterial of Example 14, and NiO in the hole transport layer is replaced with the nanomaterial of Example 22.

[0279] Device Comparison Examples 1-2

[0280] The devices in Comparative Examples 1 and 2 are basically the same as those in Example 1, except that the nanomaterials in Example 1 are replaced with the nanomaterials in Comparative Examples 1 and 2 to form a light-emitting layer, thus obtaining optoelectronic devices.

[0281] The lifetime (T95@1000nit), brightness (L), photostability, thermal stability, and humidity stability of the optoelectronic devices of Device Examples 1-33 and Device Comparative Examples 1-2 were tested, and the test results are shown in Table 4.

[0282] The test method for lifetime T95@1000nit is as follows: Under constant current or voltage drive, the time required for the brightness of the device to decrease to a certain percentage of its maximum brightness is defined as T95. This lifetime is the measured lifetime. To shorten the testing cycle, device lifetime testing is usually performed at high brightness by accelerating device aging, and the lifetime at high brightness is obtained by fitting the extended exponential decay brightness decay formula. For example, the lifetime at 1000nit is measured as T95@1000nit. The specific calculation formula is as follows:

[0283]

[0284] Among them, T95 L For longer lifespan at low brightness, T95 H For the measured lifetime under high brightness, L H To accelerate the device to its maximum brightness, LL The value is 1000 nits, and A is the acceleration factor. In this experiment, the lifetime of several groups of QLED devices under rated brightness was measured, and the value of A was found to be 1.7.

[0285] The brightness L was measured using an efficiency testing system built with Keithley 2400 and Keithley 6485, with a current of 2mA. The device's photostability, thermal stability, and humidity stability were obtained by measuring the retention rate of the device's brightness L before and after the test. The test conditions for the device's photostability, thermal stability, and humidity stability were the same as those described above for testing the photostability, thermal stability, and humidity stability of nanomaterials.

[0286] Table 4

[0287]

[0288]

[0289] From Table 1, we can obtain:

[0290] As can be seen from Device Examples 1-13 and Device Comparative Examples 1-2, using polythiocarbonate-modified quantum dots as the material for the light-emitting layer significantly improves the lifespan of optoelectronic devices, as well as their brightness and stability under ultraviolet light, high temperature, and high humidity conditions. This is mainly due to the improved fluorescence quantum yield and stability of quantum dots.

[0291] As can be seen from Device Examples 14-21 and Device Comparative Example 1, when N-type nanoparticles modified with polythiocarbonate are used as materials for the electronic functional layer, they can significantly improve the brightness of optoelectronic devices, extend the service life of optoelectronic devices, and improve the stability of optoelectronic devices.

[0292] As can be seen from Device Examples 22-29 and Device Comparative Example 1, the use of polythiocarbonate-modified P-type nanoparticles as a hole functional layer material can extend the lifespan of optoelectronic devices and improve the brightness of optoelectronic devices under various conditions, indicating that the optoelectronic devices provided in this application have high stability.

[0293] As can be seen from Device Examples 30-33 and Device Comparative Example 1, in optoelectronic devices, the materials in multiple film layers contain polythiocarbonate ligands, which has a greater effect on improving the performance of optoelectronic devices than materials in a single film layer containing polythiocarbonate ligands. In particular, in Device Example 33, the materials in the hole functional layer, light-emitting layer and electron functional layer all contain polythiocarbonate ligands, which significantly extends the lifespan of the optoelectronic device, significantly improves the brightness, and greatly improves the stability.

[0294] The technical solutions provided by the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A nanomaterial, characterized in that, The nanomaterial comprises inorganic nanoparticles and polythiocarbonates attached to the inorganic nanoparticles, and the structural formula of the polythiocarbonates is as follows: Where n1 is selected from integers from 1 to 5, and n2 is selected from integers from 1 to 5; R1 and R2 are each independently selected from inorganic metal ions, ammonium ions, H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, acyl, and substituted or unsubstituted C1-C2 groups. 30 Alkyl, substituted or unsubstituted C1-C 30 Alkoxy, substituted or unsubstituted C1-C 30 Alkyl mercapto, substituted or unsubstituted C1-C 30 Alkylamine, substituted or unsubstituted C1-C 30 Alkyl carbonyl, substituted or unsubstituted C1-C 30 One or more of the following: alkoxycarbonyl, aryl with 6 to 60 substituted or unsubstituted ring atoms, heteroaryl with 5 to 60 substituted or unsubstituted ring atoms, arylamino with 6 to 60 substituted or unsubstituted ring atoms, aryloxy with 6 to 60 substituted or unsubstituted ring atoms, arylthiol with 6 to 60 substituted or unsubstituted ring atoms, heteroarylamino with 5 to 60 substituted or unsubstituted ring atoms, heteroaryloxy with 5 to 60 substituted or unsubstituted ring atoms, and heteroarylthiol with 5 to 60 substituted or unsubstituted ring atoms; When R1 and R2 are substituted by substituents, each substituent is independently selected from D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, C1-C2. 30 Alkyl, C1-C 30 One or more of alkoxy groups and aryl groups having 6 to 30 ring atoms; The heteroatoms in the heteroaryl group, the heteroaryloxy group, the heteroarylamino group, and the heteroarylthiol group are each independently selected from one or more of O, P, N, and S.

2. The nanomaterial as described in claim 1, characterized in that, n1 is an integer selected from 1 to 3; and / or n2 is an integer selected from 1 to 3; and / or n1 and n2 may be the same or different; and / or R1 and R2 may be the same or different; and / or The inorganic metal ions are selected from alkali metal ions, alkaline earth metal ions, or transition metal ions; the alkali metal ions are selected from lithium ions, sodium ions, or potassium ions; the alkaline earth metal ions are selected from magnesium ions, calcium ions, strontium ions, or barium ions; and the transition metal ions are selected from zinc ions or cadmium ions.

3. The nanomaterial as described in claim 1, characterized in that, It also includes at least one of the following features (1) to (6): (1) R1 and R2 are each independently selected from inorganic metal ions, ammonium ions, H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, acyl, substituted or unsubstituted C1-C2 groups. 20 Alkyl, substituted or unsubstituted C1-C 20 Alkoxy, substituted or unsubstituted C1-C 20 Alkyl mercapto, substituted or unsubstituted C1-C 20 Alkylamine, substituted or unsubstituted C1-C 20 Alkyl carbonyl, substituted or unsubstituted C1-C 20 One or more of the following: alkoxycarbonyl, aryl with 6 to 30 substituted or unsubstituted ring atoms, heteroaryl with 5 to 30 substituted or unsubstituted ring atoms, arylamino with 6 to 30 substituted or unsubstituted ring atoms, aryloxy with 6 to 30 substituted or unsubstituted ring atoms, arylthiol with 6 to 30 substituted or unsubstituted ring atoms, heteroarylamino with 5 to 30 substituted or unsubstituted ring atoms, heteroaryloxy with 5 to 30 substituted or unsubstituted ring atoms, and heteroarylthiol with 5 to 30 substituted or unsubstituted ring atoms; (2) R1 and R2 are each independently selected from inorganic metal ions, ammonium ions, H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, acyl, substituted or unsubstituted C1-C2 groups. 15 Alkyl, substituted or unsubstituted C1-C 15 Alkoxy, substituted or unsubstituted C1-C 15 Alkyl mercapto, substituted or unsubstituted C1-C 15 Alkylamine, substituted or unsubstituted C1-C 15 Alkyl carbonyl, substituted or unsubstituted C1-C 15 One or more of the following: alkoxycarbonyl, aryl with 6 to 18 substituted or unsubstituted ring atoms, heteroaryl with 5 to 18 substituted or unsubstituted ring atoms, arylamino with 6 to 18 substituted or unsubstituted ring atoms, aryloxy with 6 to 18 substituted or unsubstituted ring atoms, arylthiol with 6 to 18 substituted or unsubstituted ring atoms, heteroarylamino with 5 to 18 substituted or unsubstituted ring atoms, heteroaryloxy with 5 to 18 substituted or unsubstituted ring atoms, and heteroarylthiol with 5 to 18 substituted or unsubstituted ring atoms; (3) R1 and R2 are each independently selected from inorganic metal ions, ammonium ions, H, D, amino, hydroxyl, carboxyl, cyano, acyl, substituted or unsubstituted C1-C1 groups. 15 Alkyl, substituted or unsubstituted C1-C 15 Alkylamine, substituted or unsubstituted C1-C 15 Alkyl carbonyl, substituted or unsubstituted C1-C 10 One or more of alkoxycarbonyl, substituted or unsubstituted aryl groups having 6 to 18 ring atoms; (4) When R1 and R2 are substituted by substituents, each substituent is independently selected from D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, C1-C1. 20 Alkyl, C1-C 20 One or more of alkoxy groups and aryl groups having 6 to 20 ring atoms; (5) When R1 and R2 are substituted by substituents, each substituent is independently selected from D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, C1-C1. 15 Alkyl, C1-C 15 One or more of alkoxy groups and aryl groups having 6 to 15 ring atoms; (6) When R1 and R2 are substituted by substituents, each substituent is independently selected from D, amino, hydroxyl, carboxyl, cyano, C1-C1. 15 One or more of the alkyl groups.

4. The nanomaterial as described in claim 1, characterized in that, The polythiocarbonates include one or more of inorganic and organic polythiocarbonates; wherein... The inorganic polythiocarbonate is selected from one or more of inorganic trithiocarbonate, inorganic tetrathiocarbonate, and inorganic pentathiocarbonate; the inorganic trithiocarbonate is selected from one or more of lithium trithiocarbonate, sodium trithiocarbonate, potassium trithiocarbonate, magnesium trithiocarbonate, calcium trithiocarbonate, strontium trithiocarbonate, barium trithiocarbonate, zinc trithiocarbonate, sodium trithiocadmium trithiocarbonate, and ammonium trithiocarbonate; the inorganic tetrathiocarbonate is selected from one or more of lithium tetrathiocarbonate, sodium tetrathiocarbonate, potassium tetrathiocarbonate, calcium tetrathiocarbonate, barium tetrathiocarbonate, and ammonium tetrathiocarbonate; the inorganic pentathiocarbonate is selected from one or more of sodium pentathiocarbonate and potassium pentathiocarbonate; and / or The organic polythiocarbonate is selected from organic trithiocarbonates; the organic trithiocarbonate is selected from bis(carboxymethyl)trithiocarbonate, cyanomethyl dodecyl carbonyl carbide, S-(2-cyano-2-propyl)-S-dodecyl trithiocarbonyl ester, bis(carboxymethyl)trithiocarbonate, bis{4-[ethyl-(2-acetoxyethyl)carbamoyl]benzyl}trithiocarbonate, and sodium trithiocarbonate.

5. The nanomaterial as described in claim 1, characterized in that, The mass ratio of the inorganic nanoparticles to the polythiocarbonate is 1:(1-10); and / or The inorganic nanoparticles and the polythiocarbonate are connected through one or more of the following mechanisms: physical adsorption, electrostatic force, and metal atom coordination; and / or The inorganic nanoparticles include first quantum dots, N-type nanoparticles, or P-type nanoparticles.

6. The nanomaterial as described in claim 5, characterized in that, It also includes one of the following characteristics (1) to (3): (1) When the inorganic nanoparticles include the first quantum dot: The average particle size of the first quantum dot is 5 nm to 20 nm; and / or The first quantum dot is selected from one or more of single-structure quantum dots, core-shell quantum dots, and perovskite quantum dots; the material of the single-structure quantum dot, the core material of the core-shell quantum dot, and the shell material of the core-shell quantum dot are respectively selected from one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds; the shell of the core-shell quantum dot is one or more layers; the group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, One or more of CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds are selected from SnS, SnSe, S The compounds are selected from one or more of the following: nTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V compounds are selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, and AlNAs. One or more of AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; wherein the group I-III-VI compounds are selected from one or more of CuInS2, CuInSe2, and AgInS2;The core-shell quantum dots are selected from one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS; the perovskite quantum dots are made of doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors; the inorganic perovskite semiconductor has the general structural formula AMX3, where A is Cs; + Ion, M is selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, X is selected from Cl - ,Br - I - One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, X is selected from Cl - ,Br - I - One or more of the following; (2) When the inorganic nanoparticles include the N-type nanoparticles: The N-type nanoparticles have an average particle size of 2 nm to 10 nm; and / or The N-type nanoparticles include one or more of a first doped metal oxide particle and a first undoped metal oxide particle. The material of the first undoped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The doping amount of the doping element in the first doped metal oxide particle is 0.1wt% to 20wt%. (3) When the inorganic nanoparticles include the P-type nanoparticles: The average particle size of the P-type nanoparticles is 2 nm to 10 nm; and / or The P-type nanoparticles include one or more of the following: second-doped metal oxide particles, second-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second-doped and second-undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping element in the second-doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfide includes one or more of CuS, MoS3, WS3, Sb2S3, CoS, and In2S3. The metal selenide includes one or more of MoSe3, WSe3, Sb2Se3, CoSe, and In2Se3. The metal nitride includes P-type gallium nitride. The doping amount of the doping element in the second-doped metal oxide particles is 0.1 wt% to 20 wt%.

7. The nanomaterial as described in claim 5, characterized in that, The first quantum dot is further connected to a first ligand; optionally, the mass ratio of the first quantum dot to the first ligand is 1:(0.1-1); optionally, the first ligand includes one or more of the following: aliphatic amine ligands with 1-24 carbon atoms, fatty acid ligands with 1-24 carbon atoms, carboxylate ligands, phosphate ligands, halide ion ligands, thiols with 1-24 carbon atoms, trialiphatic phosphine ligands with 9-30 carbon atoms, triarylphosphine ligands with 18-30 carbon atoms, trialiphatic phosphine oxides with 9-30 carbon atoms, and triarylphosphine oxides with 18-30 carbon atoms; the aliphatic amine ligands with 1-24 carbon atoms are... The amine ligands include one or more of oleylamine, n-decylamine, octylamine, dioctylamine, trioctylamine, dodecylamine, myristicamine, palmitamine, and stearylamine; the fatty acid ligands having 1 to 24 carbon atoms include one or more of oleic acid, n-decanoic acid, octanoic acid, dioctanoic acid, trioctanoic acid, dodecanoic acid, myristic acid, palmitic acid, stearic acid, thioglycolic acid, and mercaptopropionic acid; the carboxylate ligands are selected from one or more of magnesium carboxylate ligands, calcium carboxylate ligands, aluminum carboxylate ligands, zirconium carboxylate ligands, lithium carboxylate ligands, sodium carboxylate ligands, and barium carboxylate ligands; wherein the carboxyl group in the carboxylate ligands is a fatty acid ion having 1 to 20 carbon atoms; the phosphate ligands... The ligand is selected from one or more of magnesium phosphate ligand, calcium phosphate ligand, aluminum phosphate ligand, zirconium phosphate ligand, lithium phosphate ligand, sodium phosphate ligand, and barium phosphate ligand; the halide ion ligand is selected from one or more of fluoride ion, chloride ion, bromide ion, and iodide ion; the thiol ligand with 1 to 24 carbon atoms is selected from one or more of 1,2-ethanedithiol, propanethiol, butanethiol, octylthiol, dodecanethiol, octadecylthiol, benzylthiol, 1,2-benzenethiol, 1,3-benzenethiol, and 1,4-benzenethiol; the trialiphatic phosphine with 9 to 30 carbon atoms is selected from tripropylphosphine, tributylphosphine, tripentylphosphine, trihexylphosphine, triheptylphosphine, and trioctylphosphine. One or more of trinonylphosphine and tridecylphosphine; the triarylphosphine having 18 to 30 carbon atoms is selected from one or more of triphenylphosphine, tri(m-toluene)phosphine, tri(2-toluene)phosphine, and tri(p-methylphenyl)phosphine; the trialilophosphine having 9 to 30 carbon atoms is selected from one or more of tripropylphosphine, tributylphosphine, tripentylphosphine, trihexylphosphine, triheptylphosphine, trioctylphosphine, trinonylphosphine, and tridecylphosphine; the triarylphosphine having 18 to 30 carbon atoms is selected from one or more of triphenylphosphine, tri(m-toluene)phosphine, tri(2-toluene)phosphine, and tri(p-methylphenyl)phosphine; or The N-type nanoparticles are further connected to a second ligand; optionally, the mass ratio of the N-type nanoparticles to the second ligand is 1:(0.1-1); optionally, the second ligand includes one or more of hydroxyl ligands, carboxyl ligands, and amine ligands; the hydroxyl ligand includes one or more of methanol, ethanol, propanol, butanol, octanol, pentanol, hexanol, heptanol, decanol, ethylene glycol, glycerol, propylene glycol, pentaerythritol, allyl alcohol, and vinyl alcohol; The carboxyl ligand includes one or more of acetic acid, maleic acid, benzoic acid, phenylacetic acid, phthalic acid, terephthalic acid, valeric acid, hexanoic acid, decanoic acid, oxalic acid, citric acid, tartaric acid, stearic acid, palmitic acid, oleic acid, and oxalic acid; the amine ligand includes one or more of o-phenylenediamine, m-phenylenediamine, ethylamine, ethylenediamine, methyl ethylamine, diethylamine, methyl ethyl isopropylamine, N,N-dimethylaniline, propylamine, aniline, diisopropylamine, triethanolamine, and tetrabutylammonium bromide; or The P-type nanoparticles are further connected to a third ligand; optionally, the mass ratio of the P-type nanoparticles to the third ligand is 1:(0.1-1); optionally, the third ligand includes one or more of hydroxyl ligands, carboxyl ligands, and amine ligands; the hydroxyl ligand includes one or more of methanol, ethanol, propanol, butanol, octanol, pentanol, hexanol, heptanol, decanol, ethylene glycol, glycerol, propylene glycol, pentaerythritol, allyl alcohol, and vinyl alcohol; The carboxyl ligands include one or more of acetic acid, maleic acid, benzoic acid, phenylacetic acid, phthalic acid, terephthalic acid, valeric acid, hexanoic acid, decanoic acid, oxalic acid, citric acid, tartaric acid, stearic acid, palmitic acid, oleic acid, and oxalic acid; the amine ligands include one or more of o-phenylenediamine, m-phenylenediamine, ethylamine, ethylenediamine, methyl ethylamine, diethylamine, methyl ethyl isopropylamine, N,N-dimethylaniline, propylamine, aniline, diisopropylamine, triethanolamine, and tetrabutylammonium bromide.

8. A thin film, characterized in that, The material of the thin film includes the nanomaterials as described in any one of claims 1 to 7.

9. The thin film as claimed in claim 8, characterized in that, The inorganic nanoparticles include first quantum dots, N-type nanoparticles, or P-type nanoparticles; wherein... When the inorganic nanoparticles include the first quantum dot, the thickness of the film is 10 nm to 50 nm; or When the inorganic nanoparticles include the N-type nanoparticles, the thickness of the film is 10 nm to 60 nm; or When the inorganic nanoparticles include the P-type nanoparticles, the thickness of the film is 20 nm to 100 nm.

10. An optoelectronic device, characterized in that, It includes an anode, a functional layer and a cathode stacked together, wherein the material of the functional layer includes the nanomaterials as described in any one of claims 1 to 7, or the functional layer includes the thin film as described in any one of claims 8 to 9.

11. The optoelectronic device as described in claim 10, characterized in that, It also includes at least one of the following features (1) to (2): (1) The anode and the cathode each independently include a metal electrode, a carbon electrode, a doped or undoped metal oxide electrode, and a composite electrode; wherein, the material of the metal electrode is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Ni, Ir, and Mg; the material of the carbon electrode is selected from one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the material of the doped or undoped metal oxide electrode is selected from ITO, FTO, ATO, AZO, GZO, IZO, MZO, ITZO, and I The composite electrode material is selected from one or more of CO, AMO, SnO2, In2O3, Cd:ZnO, F:SnO2, In:SnO2, and Ga:SnO2; the composite electrode material is selected from one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, and ZnS / Al / ZnS. (2) The functional layer includes one or more of a hole functional layer, an active layer, and an electronic functional layer. The hole functional layer is located between the anode and the active layer, and the electronic functional layer is located between the active layer and the cathode. At least one of the hole functional layer, the active layer, and the electronic functional layer is made of the nanomaterial. The inorganic nanoparticles in the nanomaterial include first quantum dots, N-type nanoparticles, or P-type nanoparticles. When the hole functional layer includes the nanomaterial, the inorganic nanoparticles in the nanomaterial include the P-type nanoparticles. When the active layer includes the nanomaterial, the inorganic nanoparticles in the nanomaterial include the first quantum dot. When the electronic functional layer includes the nanomaterial, the inorganic nanoparticles in the nanomaterial include the N-type nanoparticles.

12. The optoelectronic device as described in claim 11, characterized in that, When the material of the hole functional layer and / or the electron functional layer includes the nanomaterial, the material of the active layer includes the nanomaterial, an organic light-emitting material, or a second quantum dot material; the organic light-emitting material is selected from one or more of CBP:Ir(mppy)3, TCTX:Ir(mmpy), diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, TADF materials, polymers containing BN covalent bonds, HLCT materials, and Exciplex luminescent materials; the second quantum dot is selected from one or more of single-structure quantum dots, core-shell quantum dots, and perovskite quantum dots; the material of the single-structure quantum dot, the core material of the core-shell quantum dot, and the shell material of the core-shell quantum dot are each independently selected from one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds; the shell of the core-shell quantum dot is one or more layers; the II-V Group I compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSe S, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZn The IV-VI compounds are selected from one or more of the following: STe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe;The III-V compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. Several types; the I-III-VI group compounds are selected from one or more of CuInS2, CuInSe2, and AgInS2; the core-shell structured quantum dots are selected from one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS; the perovskite quantum dots are made of doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors; the inorganic perovskite semiconductor has the general structural formula AMX3, where A is Cs; + Ion, M is selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, X is selected from Cl - ,Br - I - One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2 + Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, X is selected from Cl - ,Br - I - One or more of them; When the material of the hole functional layer and / or the active layer includes the nanomaterial, the material of the electronic functional layer includes the nanomaterial, an organic N-type semiconductor material, or an inorganic N-type semiconductor material; the organic N-type semiconductor material includes 8-hydroxyquinoline aluminum, 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, 4,7-diphenyl-1,10-o-diazaphenanthroline, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 3-(biphenyl-4-yl)-5-(4-tert-butyl) 2,2'-(1,3-phenyl)-4-phenyl-4H-1,2,4-triazole, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum, 2,2'-(1,3-phenyl)bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazole], tris[2,4,6-trimethyl-3-(3-pyridyl)phenyl]borane, tetra[(m-pyridyl)-phenyl-3-yl]biphenyl, 3,3'-[5'-[3-(3-pyridyl)phenyl][1,1':3',1”-terphenyl] The inorganic N-type semiconductor material comprises one or more of the following: [benzene]-3,3”-diyl]dipyridine, 1,3-bis(3,5-dipyridin-3-ylphenyl)benzene, n,n′-bis(naphthyl-1-yl)-n,n′-bis(phenyl)benzidine, and diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide; the inorganic N-type semiconductor material includes one or more of third-doped metal oxide particles and third-undoped metal oxide particles, wherein the material of the third-undoped metal oxide particles includes ZnO, TiO2, SnO2, and ZrO2. One or more of Ta2O5, wherein the metal oxide in the third doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3, and the doping element in the third doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga, wherein the doping amount of the doping element in the third doped metal oxide particles is 0.1wt% to 20wt%; When the material of the electronic functional layer and / or the active layer includes the nanomaterial, the material of the hole functional layer includes the nanomaterial, an organic P-type semiconductor material, or an inorganic P-type semiconductor material; the organic P-type semiconductor material includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-biphenyl-4,4'-diamine, and N,N'-bis(3-methylphenyl)-N,N'-biphenyl-4,4'-diamine. -Bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl) -co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-)phenylenevinylene, poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1, 1'-Biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthyl-1-yl)-N,N'-diphenylbenzidine, spironolactone (NPB), nanocrystalline diamond, microcrystalline cellulose and tetracyanoquinone dimethane, doped graphene, and undoped graphene are among one or more of these compounds.The inorganic P-type semiconductor material includes one or more of the following: fourth-doped metal oxide particles, fourth-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the fourth-doped metal oxide particles and the fourth-undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping element in the fourth-doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfide includes one or more of CuS, MoS3, WS3, Sb2S3, CoS, and In2S3. The metal selenide includes one or more of MoSe3, WSe3, Sb2Se3, CoSe, and In2Se3. The metal nitride includes P-type gallium nitride. The doping amount of the doping element in the fourth-doped metal oxide particles is 0.1 wt% to 20 wt%. ; 13. A display device, characterized in that, Including the optoelectronic device as described in any one of claims 10 to 12.

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