Photoelectric fusion-oriented high-power micro-ring special model signal processing method and device

Abstract

The application discloses a high-power micro-ring special model signal processing method and device for photoelectric fusion, and belongs to the technical field of micro-ring modeling. The method comprises the following steps: S1, generating an input optical signal; S2, acquiring input optical power of the input optical signal, inputting the input optical power into a nonlinear effect module to obtain a refractive index variation, an electro-optical bandwidth variation and a loss coefficient variation; S3, updating a refractive index initial value, an electro-optical bandwidth initial value and a loss coefficient initial value based on the refractive index variation, the electro-optical bandwidth variation and the loss coefficient variation to obtain a refractive index real value, an electro-optical bandwidth real value and a loss coefficient real value; S4, performing complex form operation on the input optical signal based on the refractive index real value, the electro-optical bandwidth real value and the loss coefficient real value to obtain an output optical signal; and S5, sending total absorption power of the output optical signal to a plasma dispersion effect submodule and a self-heating effect submodule for feedback. The method improves the accuracy of high-power micro-ring device modeling.

Description

Technical Field

[0001] This application belongs to the field of micro-ring modeling technology, and in particular relates to a signal processing method and device for a high-power micro-ring dedicated model for optoelectronic fusion. Background Technology

[0002] High-speed, high-power microrings possess the characteristics of miniaturization, low power consumption, and CMOS process compatibility, making them core photonic devices in optoelectronic convergence fields such as 6G optical communication and CPO. Accurate characterization of the nonlinear dynamics of their photogenerated carriers is a key prerequisite for device development and system integration.

[0003] Traditional micro-ring modeling frameworks are only suitable for low-speed, low-power scenarios. The core logic is to first construct a basic model of optical signal transmission in the waveguide to quantitatively characterize the amplitude attenuation, phase shift, and group delay of the optical signal; then integrate basic nonlinear effects such as optical Kerr effect, two-photon absorption, and free carrier effect to establish their correlation equations with effective refractive index (Δneff) and loss (Δα); subsequently, the effects of various nonlinear effects (optical Kerr effect (OKE), two-photon absorption (TPA), free carrier absorption (FCA), free carrier dispersion (FCD), electro-optic effect (EOE), thermo-optic effect (TOE), and self-heating effect (SHE)) are simplified into correlation functions of input optical power (Pin), and the static accumulation of optical parameters is completed through variable fitting, following the static rule of "parameter change reset after excitation removal"; finally, a complete micro-ring device model is formed by combining the directional coupler model, which is only suitable for low-speed, low-power steady-state scenarios. This framework has three major limitations: First, it fails to characterize the single-photon absorption (SPA) effect induced by temperature and process defects under high power, making it difficult to meet the device characteristic simulation requirements of high-power scenarios such as co-packaged optics (CPO). Second, it lacks a closed-loop coupling feedback mechanism of "nonlinear effect - refractive index / loss - absorbed power," failing to characterize the dynamic interaction of various physical quantities under high-speed, high-power conditions. Third, it does not establish a quantitative correlation between loss, photon lifetime, and bandwidth, failing to reflect the regulatory effect of high power on the bandwidth of microrings. Existing electronic / photonic design automation (EDA / PDA) platforms, lacking compatible models, cannot achieve accurate optoelectronic co-simulation of high-speed, high-power microrings, severely restricting the R&D progress of related devices in optoelectronic fusion scenarios, necessitating the development of dedicated modeling methods.

[0004] High-speed, high-power microrings are core photonic devices in optoelectronic convergence fields such as optical communication and co-packaged optics (CPO). Traditional microring modeling frameworks are only suitable for low-speed, low-power scenarios and have key defects such as missing characterization of single-photon absorption effect (SPA), lack of optoelectronic closed-loop coupling feedback mechanism, and failure to incorporate bandwidth dynamic response into the modeling system. As a result, existing EDA / PDA platforms cannot achieve accurate optoelectronic co-simulation. Summary of the Invention

[0005] This application aims to address at least one of the technical problems existing in the prior art. To this end, this application proposes a signal processing method and device for a dedicated high-power micro-ring model for optoelectronic integration. Through baseband equivalent theory and nonlinear dynamics of photogenerated carriers, a full-link quantitative modeling system covering complete nonlinear effects, optoelectronic closed-loop coupling feedback, and dynamic bandwidth correlation is constructed. A dedicated Verilog-A model for micro-rings adapted to high-speed, high-power scenarios is developed. The accuracy, scalability, and optoelectronic co-simulation capabilities of the model are verified through single-ring multi-dimensional characteristic simulation, dual-ring all-optical switch extension simulation, and quantum light source closed-loop system simulation. This method is compatible with mainstream EDA platforms and can achieve accurate simulation of high-speed, high-power micro-rings from basic devices to composite systems, and from open-loop characteristics to closed-loop control, providing key technical support for the design and verification of high-power micro-ring devices in optoelectronic integration scenarios.

[0006] To address the aforementioned problems, according to a first aspect of the present invention, a signal processing method for a high-power micro-ring dedicated model for optoelectronic fusion is provided, the method comprising: S1 generates the input optical signal through the baseband equivalent module of a high-power micro-ring dedicated model; S2 acquires the input optical power of the input optical signal, inputs the input optical power into the nonlinear effect module, assigns continuous variable values, and obtains the change in refractive index, the change in electro-optic bandwidth, and the change in loss coefficient. S3 updates the initial values ​​of refractive index, electro-optic bandwidth, and loss coefficient based on the changes in refractive index, electro-optic bandwidth, and loss coefficient, to obtain the true values ​​of refractive index, electro-optic bandwidth, and loss coefficient. S4 performs complex number operations on the input optical signal based on the true values ​​of refractive index, electro-optic bandwidth, and loss coefficient, and completes the equivalent processing of phase shift, loss, and time delay of the optical signal to obtain the output optical signal. S5 acquires the total absorption power of the output optical signal and sends the total absorption power of the output optical signal to the plasma dispersion effect submodule and the self-heating effect submodule for feedback. The high-power micro-ring dedicated model includes a baseband equivalent module and a nonlinear effect module. The nonlinear effect module includes an optical Kerr effect submodule, a SPA effect submodule, a TPA effect submodule, an electromodulation effect submodule, a self-heating effect submodule, a plasma dispersion effect submodule, and a thermo-optical effect submodule.

[0007] According to one embodiment of this application, the calculation formula for the SPA effect submodule is as follows:

[0008] in, This is the SPA attenuation coefficient. The instantaneous light intensity of the input optical power. This represents the change in the SPA effect loss coefficient.

[0009] According to one embodiment of this application, the calculation formula for the plasma dispersion effect submodule is as follows:

[0010] in, for Rate of change of carrier concentration at any given time Instantaneous carrier concentration, For carrier lifetime, , These are the coupling coefficients of SPA and TPA, respectively. For the energy of a single photon, is Planck's constant. The frequency of the optical signal. For the volume of the active region, This represents the total absorbed power of the output optical signal.

[0011] According to one embodiment of this application, the step of inputting the input optical power into the nonlinear effect module, assigning continuous variable values ​​to obtain the refractive index change, electro-optic bandwidth change, and loss coefficient change includes: The instantaneous light intensity of the input optical power is input into the optical Kerr effect submodule to obtain the optical Kerr effect refractive index change. The instantaneous light intensity of the input optical power is input into the SPA effect submodule to obtain the change in the SPA effect loss coefficient; The instantaneous light intensity of the input optical power is input into the TPA effect submodule to obtain the change in the TPA effect loss coefficient; The instantaneous modulation voltage of the input optical power is input into the electromodulation effect submodule to obtain the change in refractive index and the change in loss coefficient of the electromodulation effect. The electron concentration increment and hole concentration increment of the input optical power are input into the plasma dispersion effect submodule to obtain the change in FCA loss coefficient and the change in FCD refractive index. The instantaneous temperature difference between the input optical power and the ambient temperature is input into the thermo-optical effect submodule to obtain the thermo-optical effect refractive index change. The refractive index change is obtained based on the refractive index change due to the optical Kerr effect, the refractive index change due to the electromodulation effect, the refractive index change due to the FCD, and the refractive index change due to the thermo-optical effect. The change in loss coefficient is obtained based on the changes in loss coefficient due to the SPA effect, TPA effect, electromodulation effect, and FCA effect. The change in electro-optic bandwidth is obtained based on the bandwidth value before and after the input optical power passes through the nonlinear effect module.

[0012] According to one embodiment of this application, the baseband equivalent module includes an input baseband field and an output baseband field.

[0013] According to one embodiment of this application, the high-power microring dedicated model further includes a bandwidth response module, which is used to adjust the true value of the electro-optic bandwidth based on the 3dB cutoff frequency.

[0014] According to one embodiment of this application, the formula for calculating the 3dB cutoff frequency is as follows:

[0015] in, The cutoff frequency is 3dB. For coupling quality factors, For intrinsic quality factors, It is the optical angular frequency. The electrical cutoff frequency, For the overall quality factor, This is the optical cutoff frequency.

[0016] According to a second aspect of the present invention, a high-power micro-ring dedicated model signal processing device for optoelectronic fusion is provided, the device comprising: The generation module is used to generate the input optical signal through the baseband equivalent module of the high-power microring dedicated model; The acquisition module is used to acquire the input optical power of the input optical signal, input the input optical power into the nonlinear effect module, assign continuous variable values, and obtain the change in refractive index, the change in electro-optic bandwidth and the change in loss coefficient. The first processing module is used to update the initial values ​​of refractive index, electro-optic bandwidth, and loss coefficient based on the changes in refractive index, electro-optic bandwidth, and loss coefficient, so as to obtain the true values ​​of refractive index, electro-optic bandwidth, and loss coefficient. The second processing module is used to perform complex number operations on the input optical signal based on the true value of the refractive index, the true value of the electro-optic bandwidth, and the true value of the loss coefficient, to complete the equivalent processing of the phase shift, loss, and time delay of the optical signal, and obtain the output optical signal. The third processing module is used to obtain the total absorption power of the output optical signal and send the total absorption power of the output optical signal to the plasma dispersion effect submodule and the self-heating effect submodule for feedback. The high-power micro-ring dedicated model includes a baseband equivalent module and a nonlinear effect module. The nonlinear effect module includes an optical Kerr effect submodule, a SPA effect submodule, a TPA effect submodule, an electromodulation effect submodule, a self-heating effect submodule, a plasma dispersion effect submodule, and a thermo-optical effect submodule.

[0017] According to a third aspect of the present invention, an electronic device is provided, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor, when executing the computer program, implements the high-power micro-ring dedicated model signal processing method for optoelectronic fusion as described in the first aspect above.

[0018] According to a fourth aspect of the present invention, a non-transitory computer-readable storage medium is provided, on which a computer program is stored, which, when executed by a processor, implements the high-power micro-ring dedicated model signal processing method for optoelectronic fusion as described in the first aspect above.

[0019] According to a fifth aspect of the present invention, a chip is provided, the chip including a processor and a communication interface, the communication interface being coupled to the processor, the processor being used to run a program or instructions to implement the high-power micro-ring dedicated model signal processing method for optoelectronic fusion as described in the first aspect.

[0020] According to a sixth aspect of the present invention, a computer program product is provided, comprising a computer program that, when executed by a processor, implements the high-power microring dedicated model signal processing method for optoelectronic fusion as described in the first aspect above.

[0021] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application.

[0022] The present invention provides a signal processing method for a high-power micro-ring dedicated model for optoelectronic fusion, which has the following advantages over the prior art: (1) This invention supplements the quantitative characterization of the entire SPA effect by targeting the SPA effect induced by temperature and process defects under high power, which is not characterized by traditional models. First, it quantifies the loss change and incorporates it into the total loss superposition. Then, through a purely theoretically innovative carrier concentration dynamic equation, it incorporates the SPA effect into the carrier generation regulation for the first time, constructs a two-dimensional action link of "SPA effect → loss / carrier", improves the set of nonlinear effects in high power scenarios, and makes up for the shortcomings of the key effect characterization in traditional models.

[0023] (2) This invention constructs a closed-loop coupled feedback link of full parameters: taking the absorbed power as the core associated parameter, it connects all the full refractive index changes and full loss changes induced by nonlinear effects, and combines carrier dynamics and self-heating effect to form a dynamic interaction mechanism of "nonlinear effect → full Δn / Δα → absorbed power → dynamic process → reverse regulation of full Δn / Δα", which breaks through the static limitation of the traditional model of "parameter reset after excitation removal".

[0024] (3) This invention establishes a dynamic response system with closed-loop coupling of "refractive index-loss-bandwidth". Relying on the closed-loop coupling relationship between refractive index and loss coefficient, the loss coefficient after coupling is converted into quality factor and photon lifetime. Then, the optical (photon lifetime-dominated) and electrical (PN junction RC constant-dominated) cutoff frequencies are coupled, and the bandwidth response depth is incorporated into the optoelectronic closed-loop feedback framework to form a quantitative correlation of the entire link. This accurately simulates the bandwidth dynamic response under high power and fills the modeling gap in this field. Attached Figure Description

[0025] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which: Figure 1 This is a schematic flowchart of a high-power micro-ring dedicated model signal processing method for optoelectronic fusion provided in an embodiment of this application; Figure 2 This is a schematic diagram of a traditional low-power microring model provided in the embodiments of this application; Figure 3 This is a high-power microring model framework diagram provided in the embodiments of this application; Figure 4 These are schematic diagrams of the structure and modeling principles of the high-power single-loop model provided in this application embodiment; Figure 5 These are the transmission spectrum, phase shift spectrum, and bandwidth response spectrum of the high-power single-loop model provided in the embodiments of this application; Figure 6 This is the eye diagram of the microring under low and high power conditions when the bandwidth of the high-power single-ring model provided in this application embodiment is sufficient; Figure 7 This is the eye diagram of the microring under low and high power conditions when the bandwidth of the high-power single-ring model provided in this application embodiment is insufficient; Figure 8 These are schematic diagrams of the structure and modeling principles of the high-power dual-ring model provided in this application embodiment; Figure 9 This is a schematic diagram of a dual-light-injection all-optical switch provided in an embodiment of this application; Figure 10 This is a simulation waveform diagram of the high-power dual-loop model provided in the embodiments of this application; Figure 11 This is a diagram of an on-chip quantum light source closed-loop optoelectronic system architecture that can automatically avoid bistable states, provided in an embodiment of this application. Figure 12 This is a logic block diagram of the SCAN-SEEK-LOCK three-stage locking algorithm provided in the embodiments of this application; Figure 13 This is a simulation waveform diagram of the closed-loop wavelength-locked loop provided in the embodiments of this application; Figure 14 This is a schematic diagram of the structure of the high-power micro-ring dedicated model signal processing device for optoelectronic fusion provided in the embodiments of this application; Figure 15 This is a schematic diagram of the structure of the electronic device provided in the embodiments of this application. Detailed Implementation

[0026] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0027] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate to allow embodiments of this application to be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0028] The following description, in conjunction with the accompanying drawings, details the high-power micro-ring dedicated model signal processing method, device, electronic equipment, and readable storage medium for optoelectronic fusion provided in this application, through specific embodiments and application scenarios.

[0029] Among them, the high-power micro-ring dedicated model signal processing method for optoelectronic integration can be applied to the terminal, specifically executed by the hardware or software in the terminal.

[0030] The terminal includes, but is not limited to, portable communication devices such as mobile phones or tablets with touch-sensitive surfaces (e.g., touchscreen displays and / or touchpads). It should also be understood that, in some embodiments, the terminal may not be a portable communication device, but rather a desktop computer with touch-sensitive surfaces (e.g., touchscreen displays and / or touchpads).

[0031] The following embodiments describe a terminal including a display and a touch-sensitive surface. However, it should be understood that the terminal may include one or more other physical user interface devices such as a physical keyboard, mouse, and joystick.

[0032] The high-power micro-ring dedicated model signal processing method for optoelectronic fusion provided in this application embodiment can be executed by an electronic device or a functional module or entity in an electronic device that can implement the high-power micro-ring dedicated model signal processing method for optoelectronic fusion. The electronic devices mentioned in this application embodiment include, but are not limited to, mobile phones, tablets, computers, cameras, and wearable devices. The following uses an electronic device as the execution subject to illustrate the high-power micro-ring dedicated model signal processing method for optoelectronic fusion provided in this application embodiment.

[0033] Figure 1 This is a flowchart illustrating the signal processing method for a high-power micro-ring dedicated model for optoelectronic fusion provided in an embodiment of this application. Figure 1 As shown, the signal processing method for a high-power micro-ring dedicated model for optoelectronic fusion includes steps 110, 120, 130, 140, and 150.

[0034] Step 110, S1 generates the input optical signal through the baseband equivalent module of the high-power micro-ring dedicated model; It is easy to understand that the basic framework for optical signal propagation is constructed based on the baseband equivalent theory. By analyzing the correlation equation between the electric field and the baseband equivalent field, the quantitative characterization of optical signal amplitude attenuation, phase shift and group delay is completed, laying the foundation for the underlying transmission theory.

[0035] In some embodiments, the baseband equivalent module includes an input baseband field and an output baseband field.

[0036] For example, the high-power micro-ring dedicated model is based on the baseband equivalent theory to construct the core framework for optical signal propagation. The core calculation formula is shown below:

[0037]

[0038] in, Analytical electric field expressed in complex numbers. It is the baseband equivalent field of the analytical electric field. It is the speed of light. This is the reference frequency; the actual frequency is... It can be represented as .

[0039] If only first-order dispersion is considered, then the frequency wave vector at the location The calculation formula is as follows:

[0040] in, At frequency The effective refractive index at that point, for , The group refractive index.

[0041] For length of waveguide, output field It can be used as an input field The function representation is shown below:

[0042] in, It is transmission loss. It is relative to Phase shift, time delay Then it is used to indicate relative to The phase shift.

[0043] Step 120, S2: Obtain the input optical power of the input optical signal, input the input optical power into the nonlinear effect module, assign continuous variable values, and obtain the change in refractive index, the change in electro-optic bandwidth, and the change in loss coefficient. Furthermore, the high-power key SPA (single-photon absorption) effect is added to the traditional set of nonlinear effects, and the optical Kerr, two-photon absorption (TPA), electromodulation, plasma dispersion, thermo-optic effects are integrated simultaneously. Quantitative equations for the refractive index or loss change corresponding to each effect are established to achieve full-dimensional coverage of nonlinear effects.

[0044] In some embodiments, the nonlinear effect module includes an optical Kerr effect submodule, a SPA effect submodule, a TPA effect submodule, an electromodulation effect submodule, a self-heating effect submodule, a plasma dispersion effect submodule, and a thermo-optical effect submodule.

[0045] In some embodiments, the calculation formula for the SPA effect submodule is as follows:

[0046] in, This is the SPA attenuation coefficient. The instantaneous light intensity of the input optical power. This represents the change in the SPA effect loss coefficient.

[0047] In some embodiments, the step of inputting the input optical power into the nonlinear effect module, assigning continuous variable values, and obtaining the changes in refractive index, electro-optic bandwidth, and loss coefficient includes: The instantaneous light intensity of the input optical power is input into the optical Kerr effect submodule to obtain the optical Kerr effect refractive index change. The instantaneous light intensity of the input optical power is input into the SPA effect submodule to obtain the change in the SPA effect loss coefficient; The instantaneous light intensity of the input optical power is input into the TPA effect submodule to obtain the change in the TPA effect loss coefficient; The instantaneous modulation voltage of the input optical power is input into the electromodulation effect submodule to obtain the change in refractive index and the change in loss coefficient of the electromodulation effect. The electron concentration increment and hole concentration increment of the input optical power are input into the plasma dispersion effect submodule to obtain the change in FCA loss coefficient and the change in FCD refractive index. The instantaneous temperature difference between the input optical power and the ambient temperature is input into the thermo-optical effect submodule to obtain the thermo-optical effect refractive index change. The refractive index change is obtained based on the refractive index change due to the optical Kerr effect, the refractive index change due to the electromodulation effect, the refractive index change due to the FCD, and the refractive index change due to the thermo-optical effect. The change in loss coefficient is obtained based on the changes in loss coefficient due to the SPA effect, TPA effect, electromodulation effect, and FCA effect. The change in electro-optic bandwidth is obtained based on the bandwidth value before and after the input optical power passes through the nonlinear effect module.

[0048] The optical Kerr effect is the core nonlinear effect of light intensity-induced refractive index change, and its relationship between the refractive index change and instantaneous light intensity is expressed as follows:

[0049] in, for The change in refractive index due to the Kerr effect at any given time (dimensionless). It is a nonlinear refractive index coefficient, characterizing the material's sensitivity to light intensity; The instantaneous light intensity can be calculated by converting optical power to the effective cross-sectional area of ​​the waveguide. , (This refers to the effective cross-sectional area of ​​the waveguide).

[0050] The SP (Spectrum Intensity Spray) effect cannot be ignored in high-power scenarios. It is induced by temperature rise and dielectric process defects, and the change in loss is linearly related to the instantaneous light intensity, as shown in the following expression:

[0051] in, The change in the SPA effect loss coefficient at time t; This is the SPA attenuation coefficient, which is related to the defect density and temperature of the medium. The TPA effect originates from two-photon quantum transitions. The superposition of photon energies triggers electron transitions and light absorption. The change in light loss is proportional to the square of the instantaneous light intensity, as shown in the following expression:

[0052] in, for Change in the TPA effect loss coefficient at time; The TPA attenuation coefficient is less affected by temperature. The instantaneous intensity.

[0053] Electrical modulation controls optical parameters through carrier injection / depletion at the PN junction. Due to the nonlinearity of the modulation relationship, a fifth-order polynomial is used to characterize the wide voltage range characteristics. The changes in refractive index and loss are as follows:

[0054]

[0055] in, It is a momentary modulation voltage; The voltage modulation coefficient of the refractive index ( ); The voltage modulation coefficient for loss ( Both types of coefficients were determined by fitting experimental data.

[0056] Absorbed power is crucial in connecting nonlinear loss and energy conversion; its magnitude determines the intensity of subsequent carrier generation and self-heating effects. It is calculated by combining the input-output optical power difference with the total attenuation coefficient.

[0057] in, for Instantaneous power absorption at all times; , These are the input and output optical powers, respectively. The total attenuation coefficient is the sum of intrinsic attenuation and various nonlinear attenuations. ); The intrinsic attenuation coefficient; The effective length of the waveguide.

[0058] The dynamic evolution of carrier concentration is regulated by the combined effects of SPA / TPA generation and lifetime, and the kinetic equation is as follows:

[0059] in, for The rate of change of carrier concentration at any given time; This represents the instantaneous carrier concentration. For carrier lifetime; , These are the coupling coefficients of SPA and TPA, respectively. The energy of a single photon ( is Planck's constant. (The frequency of the optical signal); Let be the volume of the active region.

[0060] The absorbed power simultaneously triggers a self-heating effect. Temperature changes follow the law of energy conservation, determined by the balance between heat generation and heat dissipation, as shown in the equation:

[0061] in, for Rate of temperature change over time; Instantaneous temperature; The ambient temperature; Thermal relaxation time; The density of the medium; Specific heat capacity; The volume of the active region is consistent with the carrier dynamics equation.

[0062] Changes in carrier concentration induce plasmonic dispersion, manifested as FCA (loss variation) and FCD (refractive index variation), quantitatively expressed as:

[0063]

[0064] in, for Change in FCA loss coefficient at time; for Change in refractive index of FCD at time; , These represent the increases in electron and hole concentrations, respectively; according to the conservation of electron-hole pairs, we know... The coefficients in the formula are plasma dispersion coefficients.

[0065] Temperature changes modulate the refractive index through the thermo-optical effect, exhibiting a linear relationship between the refractive index and the temperature difference, expressed as:

[0066] in, for The change in refractive index due to thermo-optical effect at any given moment; Thermo-optic coefficient; This represents the difference between the instantaneous temperature and the ambient temperature.

[0067] Considering all the aforementioned nonlinear effects, the change in the microring refractive index and the total loss are linear superpositions of the contributions of each effect. As the core parameter for analyzing the optical signal transmission characteristics, the expression is:

[0068]

[0069] in, This refers to the total change in refractive index, encompassing optical Kerr, FCD, thermo-optical, and electro-modulation effects. This represents the total change in losses, including SPA, TPA, FCA, and electrical modulation effects.

[0070] In some embodiments, the core components of the model include a laser source, a directional coupler, and a nonlinear waveguide model.

[0071] In some embodiments, the high-power microring dedicated model further includes a bandwidth response module, which is used to adjust the true value of the electro-optic bandwidth based on the 3dB cutoff frequency.

[0072] The increase in loss coefficient due to nonlinear effects leads to a decrease in photon lifetime, which in turn leads to an increase in optical bandwidth, and ultimately to an increase in electro-optic bandwidth. Therefore, a quantitative correlation system of loss-photon lifetime-bandwidth is constructed, which converts total loss into quality factor, correlates photon lifetime with optical cutoff frequency, and combines the electrical cutoff frequency dominated by the RC constant of PN junction to derive the total 3dB cutoff frequency of microring, thereby achieving accurate modeling of bandwidth dynamic response under high power.

[0073] In some embodiments, the formula for calculating the 3dB cutoff frequency is as follows:

[0074] in, The cutoff frequency is 3dB. For coupling quality factors, For intrinsic quality factors, It is the optical angular frequency. The electrical cutoff frequency, For the overall quality factor, This is the optical cutoff frequency.

[0075] Besides refractive index and loss coefficient, the bandwidth response in high-speed, high-power microrings is also a key focus. The total 3dB cutoff frequency of the microring modulator is a core indicator of its bandwidth capability, determined by the inverse square coupling of optical characteristics (dominated by photon lifetime) and electrical characteristics (dominated by the RC constant of the PN junction), as follows:

[0076] in, The total 3dB cutoff frequency; This is the optical cutoff frequency; The electrical cutoff frequency is determined by the PN junction parameters. , For junction resistance, (This refers to the junction capacitance).

[0077] The optical cutoff frequency is inversely proportional to the photon lifetime, directly reflecting the influence of the photon dwell time within the cavity on the optical bandwidth. The expression is:

[0078] in, This is the optical cutoff frequency; The inverse relationship between photon lifetime and photon lifetime indicates that the longer the photon lifetime, the lower the optical cutoff frequency.

[0079] The photon lifetime is determined by the total quality factor of the microring, and a quantitative correlation can be established between it and the total quality factor and optical angular frequency, thus transforming the cavity loss characteristics into bandwidth-related parameters:

[0080] in, Photon lifetime; The total quality factor (dimensionless). The optical angular frequency satisfies ( (The frequency of the optical signal).

[0081] The total quality factor can be decomposed into the coupling quality factor (characterizing coupling loss) and the intrinsic quality factor (characterizing internal loss). The contribution weights of the two types of losses are determined by superimposing their reciprocals.

[0082] in, The total quality factor (dimensionless). For coupling quality factor (dimensionless); The intrinsic quality factor (dimensionless).

[0083] The intrinsic quality factor is closely related to the propagation loss coefficient. By establishing a correlation between the group refractive index and the optical wavelength, the conversion of loss into quality factor can be achieved.

[0084] in, The intrinsic quality factor (dimensionless); Group refractive index (dimensionless); Wavelength of light (unit: m); This is the propagation loss coefficient (unit: m⁻¹).

[0085] The coupling quality factor of the micro-ring structure in an all-pass filter needs to be calculated in conjunction with the resonant cavity structure parameters to clarify the impact of the structure on coupling loss.

[0086] in, For coupling quality factor (dimensionless); The round-trip length of the resonant cavity; Group refractive index (dimensionless); Wavelength of light (unit: m); The coupler transmission coefficient ( ).

[0087] The add-drop filter structure contains two couplers, doubling the coupling loss. Therefore, the coupling quality factor needs to be corrected to match its loss characteristics.

[0088] in, For addition-subtraction structural coupling quality factor (dimensionless); The quality factor of the all-through structure coupling (dimensionless) is corrected for the loss doubling effect of the dual coupler.

[0089] By relating photon lifetime to quality factor, decomposing the quality factor, and substituting the calculation logic into the total cutoff frequency formula, a complete expression integrating optical and electrical characteristics is obtained, providing a core basis for bandwidth optimization:

[0090] in, The total 3dB cutoff frequency (unit: Hz); For coupling quality factor (dimensionless); The intrinsic quality factor (dimensionless); It is the optical angular frequency; The electrical cutoff frequency (unit: Hz).

[0091] Steps 130 and S3 update the initial values ​​of refractive index, electro-optic bandwidth, and loss coefficient based on the changes in refractive index, electro-optic bandwidth, and loss coefficient to obtain the true values ​​of refractive index, electro-optic bandwidth, and loss coefficient. Steps 140 and S4 perform complex number operations on the input optical signal based on the true values ​​of refractive index, electro-optic bandwidth, and loss coefficient to complete the equivalent processing of phase shift, loss, and time delay of the optical signal, and obtain the output optical signal. Steps 150 and S5: Obtain the total absorption power of the output optical signal and send the total absorption power of the output optical signal to the plasma dispersion effect submodule and the self-heating effect submodule for feedback. A closed-loop optoelectronic coupling feedback link is established. First, the effects are superimposed to obtain the total change in refractive index and loss. Then, the absorbed power is calculated by the difference between input and output optical power. Based on the correlation between absorbed power and carrier concentration dynamics and self-heating effect, a closed-loop dynamic interaction mechanism is formed: "nonlinear effect induces change in refractive index / loss → calculates absorbed power → drives carrier / thermodynamic process → reverse regulation of refractive index / loss". The high-power microring dedicated model includes a baseband equivalent module and a nonlinear effect module.

[0092] Figure 2 This is a schematic diagram of a traditional low-power microring model provided in the embodiments of this application. Figure 3 This is a high-power microring model framework diagram provided in the embodiments of this application. Figure 4 These are schematic diagrams of the structure and modeling principle of the high-power single-loop model provided in the embodiments of this application, such as... Figure 4 As shown, in order to verify the accuracy of the high-power microring model in representing the basic characteristics of the high-power microring, the model was built on the Cadence Virtuoso platform using Verilog-A language. The core components are the nonlinear waveguide model and the directional coupler model. The nonlinear waveguide model integrates various nonlinear optical effects and bandwidth responses under high-power scenarios, and a time-domain closed-loop feedback system is constructed to realize the simulation of high-power microrings.

[0093] In some embodiments, Figure 5 These are the transmission spectrum, phase shift spectrum, and bandwidth response spectrum of the high-power single-ring model provided in this application embodiment, in order to verify the frequency domain characteristics. For a micro-ring with a radius of 10 μm and a Q value of approximately 3500, a reference wavelength scan was performed using DC parameter scanning with an EDA tool to obtain the micro-ring spectrum at different input optical powers of -21 dBm, -8 dBm, 2.2 dBm, 4.9 dBm, 6.5 dBm, and 8.1 dBm (see...). Figure 5(See Figure (a)). The results show that as the input optical power increases, the loss coefficient gradually increases, and the transmission spectrum gradually changes from the initial symmetric resonance spectrum to an asymmetric bistable state. Moreover, the simulated linear data and the experimental point data are in high agreement, verifying the reliability of the model's characterization of the bistable characteristics under high power.

[0094] Phase shift characteristics verification. Two transmission spectral lines, -21dBm (low power) and 8.1dBm (high power), were selected to conduct effective phase shift DC sweep simulations (see...). Figure 5 (Figure (b)). At low power, the transmission spectrum and phase shift spectrum of the micro-ring exhibit classical resonance characteristics; at high power, the light intensity inside the ring increases sharply, and the nonlinear effect induces a bistable state. Under the same incident wavelength, it can be stabilized in two steady states with significantly different transmission characteristics, which is reflected as the transition point between the double branch of the transmission spectrum and the bistable state of the phase shift spectrum. The simulation data are consistent with the experimental data, verifying the accuracy of the model's phase shift characteristic characterization.

[0095] Bandwidth response verification. Two operating conditions were selected: low power -6dBm and high power 3dBm. The detection wavelength was set to the maximum point of OMA to conduct S21 parameter simulation (see...). Figure 5 Figure (c) shows that when the incident light power is increased from -6dBm to 3dBm, the electro-optic bandwidth is increased by nearly 10 GHz; further Sweep of the input power (see Figure (c)) Figure 5 As shown in Figure (d), the normalized OMA increases approximately linearly with power at low power. After the power reaches 15 dBm, the OMA begins to decrease (which is determined to be the upper limit of the power of the micro-ring). The electro-optic bandwidth increases synchronously with the power. The cause can be attributed to the reduction of photon lifetime due to nonlinear free carrier loss. The simulation results match the theoretical expectations and experimental data.

[0096] To verify the characteristics of the eye diagram, eye diagram simulations were conducted under two different operating conditions: Figure 6 This application provides eye diagrams of microrings at low and high power levels when the bandwidth of the high-power single-ring model is sufficient. Figure 6 Under the condition of 31.25Gb / s NRZ modulation, 10μm radius, and a bandwidth of about 7000, the eye diagram shows inflection point distortion at 4dBm incident light power, and the distortion is significantly aggravated at 10dBm power. This is because high power enhances the coupling feedback of nonlinear optical effects. Figure 7 This application provides an embodiment of the high-power single-ring model with insufficient bandwidth, showing the eye diagrams of the micro-ring at low and high power levels, such as... Figure 7 As shown, Figure 7 This is a case of insufficient bandwidth operation with 53Gb / s NRZ modulation, 7.5μm radius, and a Q value of approximately 5500. At 0dBm power, the eye diagram is closed, while at 10dBm power, due to increased loss, decreased photon lifetime, and enhanced bandwidth, the eye diagram is open. Figure 6 and Figure 7Both sets of simulation data matched the experimental data, verifying the model's ability to represent time-domain characteristics.

[0097] Figure 8 These are schematic diagrams of the structure and modeling principle of the high-power dual-ring model provided in the embodiments of this application, such as... Figure 8 As shown, a high-power composite dual-ring model is validated. This example verifies the model's system-level scalability. Based on a hierarchical modeling approach, a thermally nonlinear silicon-based series dual-microring resonant cavity all-optical switch model is constructed. The core components are a nonlinear waveguide and a directional coupler. Figure 9 This is a schematic diagram of a dual-light-injection all-optical switch provided in an embodiment of this application, illustrating the logic control principle of the dual-loop switch, such as... Figure 9 As shown, a dual-light co-directional injection switching mode is adopted: when the control light is at a low level, the probe light is significantly attenuated because it is at the resonant wavelength, and the switch is in the "off" state; when the control light is at a high level, the thermal nonlinear effect causes the resonant spectrum to redshift, the probe light is removed from the resonant wavelength and has no attenuation, and the switch switches to the "on" state.

[0098] Figure 10 These are simulation waveforms of a high-power dual-ring model provided in this application embodiment. For a series dual-ring system with a radius of 10 μm and a Q value of 15500, the thermal nonlinear effect at the resonant wavelength of 1540.4 nm is simulated. Transmission spectra and insertion loss diagrams are obtained under multiple injection power levels ranging from -9.7 dBm to 2.2 dBm (see...). Figure 10 As shown in Figures (a) and (b), the extinction ratio at the resonant wavelength reaches 20.2 dB, and the wavelength offset shows a linear relationship of 136.4 pm / mW with the input power. With the control light power set to 2.2 dBm and wavelength 1548.57 nm, and the probe light wavelength set to 1540.4 nm, the measured switch rise time is approximately 2.5 μs and the fall time is approximately 3.0 μs, which is consistent with the theoretical values ​​in the microsecond range (see Figures (a) and (b)). Figure 10 Figures (c) and (d) in the model are shown, and the simulation linear data is highly consistent with the experimental point data, which verifies the effectiveness of the system extension of the model.

[0099] Figure 11 This is a diagram of an on-chip quantum light source closed-loop optoelectronic system architecture that can automatically avoid bistable states, as provided in the embodiments of this application. Figure 11 As shown, in order to verify the optoelectronic collaborative closed-loop simulation capability of the high-power micro-ring closed-loop system and the verification model, an on-chip quantum light source closed-loop optoelectronic system that can automatically avoid bistable states was built. The main body of the system is an all-pass micro-ring resonator (APMRR, radius 10μm, Q value of about 6500), which integrates a heating resistor, a photodetector (PD), a transimpedance amplifier (TIA), and a microcontroller unit with a three-stage SCAN-SEEK-LOCK control algorithm. The system's control algorithm operates in three stages: SCAN, SEEK, and LOCK. Figure 12 This is a logic block diagram of the SCAN-SEEK-LOCK three-stage locking algorithm provided in the embodiments of this application, such as... Figure 12 As shown. In the SCAN stage, the initial heater voltage is 1.5V (corresponding to a micro-ring temperature of 330K and a resonant point of 1543.8nm). The voltage is gradually reduced to 0.7766V to locate the bistable point. At this time, the TIA output is 0.1085V and the micro-ring temperature is 313.35K. The voltage is further reduced to 0V to end this stage. After entering the SEEK stage, the preset lock point is 0.95 times the distance between the bistable point and the initial peak value. After resetting the voltage, the voltage is gradually reduced to 0.2037V for the TIA output and 0.826V for the heating voltage to enter the lock stage. In the LOCK stage, the error is compensated in real time based on the PID algorithm. The actual lock voltage waveform has a periodic ripple. After applying a 10K / 100Hz sinusoidal temperature disturbance, the system can reversely adjust the heating voltage to compensate for thermal fluctuations and maintain the stability of the micro-ring temperature. Figure 13 This is a simulation waveform diagram of the closed-loop wavelength-locked loop provided in the embodiments of this application, such as... Figure 13 As shown, the reliability of the photoelectric collaborative closed-loop simulation of the model was verified based on the simulation waveform.

[0100] In this embodiment, by accurately predicting the power limit and bandwidth enhancement response of high-speed, high-power microring modulators, the key problem that existing models cannot support the simulation of high-power, high-speed microring modulators (MRMs) is solved, thereby accelerating the fusion of photons and electrons at the loop level.

[0101] The high-power microring dedicated model signal processing method for optoelectronic fusion provided in this application can be executed by a high-power microring dedicated model signal processing device for optoelectronic fusion. This application uses the execution of the high-power microring dedicated model signal processing device for optoelectronic fusion as an example to illustrate the high-power microring dedicated model signal processing device for optoelectronic fusion provided in this application.

[0102] This application also provides a high-power micro-ring dedicated model signal processing device for optoelectronic fusion, such as... Figure 14 As shown, the high-power micro-ring dedicated model signal processing device for optoelectronic fusion includes: a generation module 1410, an acquisition module 1420, a first processing module 1430, a second processing module 1440, and a third processing module 1450.

[0103] The generation module 1410 is used to generate the input optical signal through the baseband equivalent module of the high-power microring dedicated model; The acquisition module 1420 is used to acquire the input optical power of the input optical signal, input the input optical power into the nonlinear effect module, assign continuous variable values, and obtain the change in refractive index, the change in electro-optic bandwidth and the change in loss coefficient. The first processing module 1430 is used to update the initial values ​​of refractive index, electro-optic bandwidth and loss coefficient based on the change in refractive index, the change in electro-optic bandwidth and the change in loss coefficient, so as to obtain the true values ​​of refractive index, electro-optic bandwidth and loss coefficient. The second processing module 1440 is used to perform complex number operations on the input optical signal based on the true value of the refractive index, the true value of the electro-optic bandwidth, and the true value of the loss coefficient, to complete the equivalent processing of the phase shift, loss, and time delay of the optical signal, and obtain the output optical signal. The third processing module 1450 is used to obtain the total absorption power of the output optical signal and send the total absorption power of the output optical signal to the plasma dispersion effect submodule and the self-heating effect submodule for feedback. The high-power micro-ring dedicated model includes a baseband equivalent module and a nonlinear effect module. The nonlinear effect module includes an optical Kerr effect submodule, a SPA effect submodule, a TPA effect submodule, an electromodulation effect submodule, a self-heating effect submodule, a plasma dispersion effect submodule, and a thermo-optical effect submodule.

[0104] According to the signal processing method for high-power micro-rings dedicated to optoelectronic integration provided in the embodiments of this application, a full-link quantitative modeling system covering complete nonlinear effects, optoelectronic closed-loop coupling feedback, and dynamic bandwidth correlation is constructed through baseband equivalent theory and photogenerated carrier nonlinear dynamics. A dedicated Verilog-A model for micro-rings adapted to high-speed, high-power scenarios is developed. The accuracy, scalability, and optoelectronic co-simulation capabilities of the model are verified through single-ring multi-dimensional characteristic simulation, dual-ring all-optical switch extension simulation, and quantum light source closed-loop system simulation. This method is compatible with mainstream EDA platforms and can achieve accurate simulation of high-speed, high-power micro-rings from basic devices to composite systems, and from open-loop characteristics to closed-loop control, providing key technical support for the design and verification of high-power micro-ring devices in optoelectronic integration scenarios.

[0105] The high-power micro-ring dedicated model signal processing device for optoelectronic fusion provided in this application embodiment can achieve… Figures 1 to 13 The various processes implemented in the embodiment of the high-power micro-ring dedicated model signal processing method for optoelectronic fusion will not be described in detail here to avoid repetition.

[0106] In some embodiments, such as Figure 15As shown, this application embodiment also provides an electronic device 1500, including a processor 1501, a memory 1502, and a computer program stored in the memory 1502 and executable on the processor 1501. When the program is executed by the processor 1501, it implements the various processes of the above-described embodiment of the high-power micro-ring dedicated model signal processing method for optoelectronic fusion, and can achieve the same technical effect. To avoid repetition, it will not be described again here.

[0107] It should be noted that the electronic devices in the embodiments of this application include the mobile electronic devices and non-mobile electronic devices described above.

[0108] This application also provides a non-transitory computer-readable storage medium storing a computer program. When the computer program is executed by a processor, it implements the various processes of the above-described embodiment of the high-power micro-ring dedicated model signal processing method for optoelectronic fusion, and can achieve the same technical effect. To avoid repetition, it will not be described again here.

[0109] The processor is the processor in the electronic device described in the above embodiments. The readable storage medium includes computer-readable storage media, such as computer read-only memory (ROM), random access memory (RAM), magnetic disk, or optical disk.

[0110] This application also provides a computer program product, including a computer program that, when executed by a processor, implements the above-described high-power micro-ring dedicated model signal processing method for optoelectronic fusion.

[0111] The processor is the processor in the electronic device described in the above embodiments. The readable storage medium includes computer-readable storage media, such as computer read-only memory (ROM), random access memory (RAM), magnetic disk, or optical disk.

[0112] This application also provides a chip, which includes a processor and a communication interface. The communication interface and the processor are coupled. The processor is used to run programs or instructions to implement the various processes of the above-described high-power micro-ring dedicated model signal processing method embodiment for optoelectronic fusion, and can achieve the same technical effect. To avoid repetition, it will not be described again here.

[0113] It should be understood that the chip mentioned in the embodiments of this application may also be referred to as a device-level chip, device chip, chip device, or on-chip device chip, etc.

[0114] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. Furthermore, it should be noted that the scope of the methods and apparatuses in the embodiments of this application is not limited to performing functions in the order shown or discussed, but may also include performing functions substantially simultaneously or in the reverse order, depending on the functions involved. For example, the described methods may be performed in a different order than described, and various steps may be added, omitted, or combined. Additionally, features described with reference to certain examples may be combined in other examples.

[0115] Through the above description of the embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus necessary general-purpose hardware platforms. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, can be embodied in the form of a computer software product. This computer software product is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk), and includes several instructions to cause a terminal (which may be a mobile phone, computer, server, or network device, etc.) to execute the high-power micro-ring dedicated model signal processing method for optoelectronic fusion of the various embodiments of this application.

[0116] In the description of this application, "first feature" and "second feature" may include one or more of the features.

[0117] In the description of this application, "multiple" means two or more.

[0118] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

[0119] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0120] Although embodiments of this application have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.

Claims

1. A signal processing method for a high-power micro-ring dedicated model for optoelectronic fusion, characterized in that, The method includes: S1 generates the input optical signal through the baseband equivalent module of a high-power micro-ring dedicated model; S2 acquires the input optical power of the input optical signal, inputs the input optical power into the nonlinear effect module, assigns continuous variable values, and obtains the change in refractive index, the change in electro-optic bandwidth, and the change in loss coefficient. S3 updates the initial values ​​of refractive index, electro-optic bandwidth, and loss coefficient based on the changes in refractive index, electro-optic bandwidth, and loss coefficient, to obtain the true values ​​of refractive index, electro-optic bandwidth, and loss coefficient. S4 performs complex number operations on the input optical signal based on the true values ​​of refractive index, electro-optic bandwidth, and loss coefficient, and completes the equivalent processing of phase shift, loss, and time delay of the optical signal to obtain the output optical signal. S5 acquires the total absorption power of the output optical signal and sends the total absorption power of the output optical signal to the plasma dispersion effect submodule and the self-heating effect submodule for feedback. The high-power micro-ring dedicated model includes a baseband equivalent module and a nonlinear effect module. The nonlinear effect module includes an optical Kerr effect submodule, a SPA effect submodule, a TPA effect submodule, an electromodulation effect submodule, a self-heating effect submodule, a plasma dispersion effect submodule, and a thermo-optical effect submodule.

2. The signal processing method for a high-power micro-ring dedicated model for optoelectronic fusion according to claim 1, characterized in that, The calculation formula for the SPA effect submodule is as follows: in, This is the SPA attenuation coefficient. The instantaneous light intensity of the input optical power. This represents the change in the SPA effect loss coefficient.

3. The signal processing method for a high-power micro-ring dedicated model for optoelectronic fusion according to claim 2, characterized in that, The calculation formula for the plasma dispersion effect submodule is as follows: in, for Rate of change of carrier concentration at any given time Instantaneous carrier concentration, For carrier lifetime, , These are the coupling coefficients of SPA and TPA, respectively. For the energy of a single photon, Let be Planck's constant. The frequency of the optical signal. For the volume of the active region, This represents the total absorbed power of the output optical signal.

4. The signal processing method for a high-power micro-ring dedicated model for optoelectronic fusion according to claim 3, characterized in that, The step of inputting the input optical power into the nonlinear effect module, assigning continuous variable values, and obtaining the changes in refractive index, electro-optic bandwidth, and loss coefficient includes: The instantaneous light intensity of the input optical power is input into the optical Kerr effect submodule to obtain the optical Kerr effect refractive index change. The instantaneous light intensity of the input optical power is input into the SPA effect submodule to obtain the change in the SPA effect loss coefficient; The instantaneous light intensity of the input optical power is input into the TPA effect submodule to obtain the change in the TPA effect loss coefficient; The instantaneous modulation voltage of the input optical power is input into the electromodulation effect submodule to obtain the change in refractive index and the change in loss coefficient of the electromodulation effect. The electron concentration increment and hole concentration increment of the input optical power are input into the plasma dispersion effect submodule to obtain the change in FCA loss coefficient and the change in FCD refractive index. The instantaneous temperature difference between the input optical power and the ambient temperature is input into the thermo-optical effect submodule to obtain the thermo-optical effect refractive index change. The refractive index change is obtained based on the refractive index change due to the optical Kerr effect, the refractive index change due to the electromodulation effect, the refractive index change due to the FCD, and the refractive index change due to the thermo-optical effect. The change in loss coefficient is obtained based on the changes in loss coefficient due to the SPA effect, TPA effect, electromodulation effect, and FCA effect. The change in electro-optic bandwidth is obtained based on the bandwidth value before and after the input optical power passes through the nonlinear effect module.

5. The signal processing method for a high-power micro-ring dedicated model for optoelectronic fusion according to claim 4, characterized in that, The baseband equivalent module includes an input baseband field and an output baseband field.

6. The signal processing method for a high-power micro-ring dedicated model for optoelectronic fusion according to claim 5, characterized in that, The high-power micro-ring dedicated model also includes a bandwidth response module, which is used to adjust the true value of the electro-optic bandwidth based on the 3dB cutoff frequency.

7. The signal processing method for a high-power micro-ring dedicated model for optoelectronic fusion according to claim 6, characterized in that, The formula for calculating the 3dB cutoff frequency is as follows: in, The cutoff frequency is 3dB. For coupling quality factors, For intrinsic quality factors, It is the optical angular frequency. The electrical cutoff frequency, For the overall quality factor, This is the optical cutoff frequency.

8. A high-power micro-ring dedicated model signal processing device for optoelectronic fusion, implemented using the high-power micro-ring dedicated model signal processing method for optoelectronic fusion as described in any one of claims 1 to 7, characterized in that, The device includes: The generation module is used to generate the input optical signal through the baseband equivalent module of the high-power microring dedicated model; The acquisition module is used to acquire the input optical power of the input optical signal, input the input optical power into the nonlinear effect module, assign continuous variable values, and obtain the change in refractive index, the change in electro-optic bandwidth and the change in loss coefficient. The first processing module is used to update the initial values ​​of refractive index, electro-optic bandwidth, and loss coefficient based on the changes in refractive index, electro-optic bandwidth, and loss coefficient, so as to obtain the true values ​​of refractive index, electro-optic bandwidth, and loss coefficient. The second processing module is used to perform complex number operations on the input optical signal based on the true value of the refractive index, the true value of the electro-optic bandwidth, and the true value of the loss coefficient, to complete the equivalent processing of the phase shift, loss, and time delay of the optical signal, and obtain the output optical signal. The third processing module is used to obtain the total absorption power of the output optical signal and send the total absorption power of the output optical signal to the plasma dispersion effect submodule and the self-heating effect submodule for feedback. The high-power micro-ring dedicated model includes a baseband equivalent module and a nonlinear effect module. The nonlinear effect module includes an optical Kerr effect submodule, a SPA effect submodule, a TPA effect submodule, an electromodulation effect submodule, a self-heating effect submodule, a plasma dispersion effect submodule, and a thermo-optical effect submodule.

9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the program, it implements the high-power micro-ring dedicated model signal processing method for optoelectronic fusion as described in any one of claims 1 to 7.

10. A non-transitory computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it implements the high-power micro-ring dedicated model signal processing method for optoelectronic fusion as described in any one of claims 1 to 7.

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