Display assembly and display device

Abstract

The present application relates to the technical field of semiconductor display, and particularly relates to a display assembly and a display device. The display assembly comprises: at least three pixel points; the three pixel points have at least a first groove and a second groove, the first groove is filled with a first wavelength conversion material and emits a first color light, and the second groove is filled with a second wavelength conversion material and emits a second color light; wherein the first groove, the second groove and the three pixel points constitute a light-emitting display unit. In the present application, the area of the upper surface of the light-emitting area of each pixel point is small, different wavelength conversion materials are arranged in different grooves between the pixel points, and the side area of the light-emitting area of each pixel point is effectively utilized, so that the micro-pixel display unit with small size and small spacing realizes full-color light-emitting display.

Description

[0001] This application is a divisional application of application number 2023106586186 (Invention title: Display component and display device, application date: June 5, 2023). Technical Field

[0002] This invention relates to the field of semiconductor display technology, and in particular to a display component, its fabrication method, and a display device. Background Technology

[0003] Micro LEDs possess characteristics such as small size, high integration, and self-emissive properties. Compared to LCD and OLED displays, Micro LEDs offer significant advantages in brightness, resolution, contrast ratio, energy consumption, lifespan, response speed, and thermal stability, making them commercially valuable and widely applicable. For example, in display fields such as Augmented Reality (AR), Virtual Reality (VR), wearable devices, Head-Up Displays (HUDs), micro-projection, and 3D printing, Micro LEDs are considered by the industry to be the ultimate solution for near-eye AR displays.

[0004] Micro LED display technology refers to the use of self-emissive, micron-sized LEDs as light-emitting pixel units, which are then assembled onto a driving panel to form a high-density LED array, thereby achieving a light-emitting display.

[0005] One of the more common methods for converting light into different colors is through excitation using quantum dots. Quantum dots (QDs) are nanoscale semiconductors that emit light of a specific frequency when a certain electric field or light pressure is applied to them. The emission spectrum of quantum dots can be controlled by changing their size, which helps display devices achieve full-color illumination. How to combine quantum dots with Micro LEDs to achieve full-color or multi-colored display in Micro LED displays is currently one of the main research and development projects in the industry.

[0006] Currently, in the AR field, GaAs (gallium arsenide) based red Micro LEDs suffer from a significant drop in luminous efficiency due to size effects, especially when the emitted light size is less than 10µm, making them unsuitable for AR applications. GaN (gallium nitride) based red LEDs are still in the research stage, facing difficulties in controlling luminous efficiency and wavelength. Therefore, using quantum dots (QDs) to excite LED chips in microdisplays to achieve full-color AR Micro LED displays is one of the industry's major research and development projects.

[0007] Therefore, in microdisplays, how to achieve stable multicolor emission by exciting tiny microdisplay pixel units with quantum dots has become one of the technical challenges that urgently need to be solved by those skilled in the art. Summary of the Invention

[0008] An embodiment of the present invention provides a display component comprising at least three pixels; at least a first trench and a second trench are formed between the three pixels, the first trench is filled with a first wavelength conversion material and emits a first color light, and the second trench is filled with a second wavelength conversion material and emits a second color light; wherein the first trench, the second trench, and the three pixels constitute a light-emitting display unit. The light-emitting display unit provides a color display when it is turned on.

[0009] An embodiment of the present invention provides a display device, including a driving substrate and a display component. The display component array is disposed on the driving substrate, and the display component has the structure described above, wherein when the display device is turned on for display, it displays in color.

[0010] Other features and advantages of the invention will be set forth in the following description, and will be apparent in part from the description, or may be learned by practicing the invention. Attached Figure Description

[0011] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0012] Figure 1 This is a cross-sectional schematic diagram of an embodiment of the display component in this invention; Figure 2 This is a cross-sectional schematic diagram showing another embodiment of the display component in this invention; Figure 3 This is a top view of an embodiment of the display component in this invention; and Figures 4 to 11 This is a schematic diagram of the preparation process of a display component according to an embodiment of the present invention.

[0013] Reference numerals: 1-Display component; 20, 20', 20'', 20'''-Pixels, micro-light-emitting diodes, epitaxial structures; 30-First trench; 40-Second trench; 50-Third trench; 21-First semiconductor layer; 22-Light-emitting layer; 23-Second semiconductor layer; 60-Insulating layer; 70, 400-Transparent conductive layer; 80-Reflective layer; 90-Protective layer; 200-Driving substrate; 201-Metal solder joint; 100-Growth substrate; 301-First bonding layer; 302-Second bonding layer; D1-Spacing; S1-Upper surface of the light-emitting area; α-Including angle. Detailed Implementation

[0014] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. The technical features designed in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0015] In the field of AR (Augmented Reality) displays, Micro LED display chips combine LED technology with silicon-based CMOS technology in their manufacturing process to achieve silicon-based light-emitting chip displays. As the individual pixel size of AR Micro LED displays shrinks (e.g., below 5µm), the low luminous efficiency of red Micro LEDs limits the technology to monochrome (primarily green) displays; no effective solution has yet been found for full-color displays. At the patent level, some have proposed using stacked RGB epitaxial structures as a basis, employing complex semiconductor processes to create an integrated RGB three-color stacked screen structure, thereby enabling multi-color or full-color displays. However, this approach involves significant technical challenges due to the multiple bonding and stacking of epitaxial structures, and the vertical height difference between RGB values ​​in the stacked chip structure introduces optical design flaws, preventing commercial mass production. To overcome these issues in the AR Micro LED display field, this invention combines a monochrome Micro LED array with quantum dot materials to excite the display to emit RGB light, thus achieving color display.

[0016] To achieve at least one or more of the advantages of this invention, one embodiment of the invention provides a display component comprising at least three pixels; at least a first trench and a second trench are formed between the three pixels; the first trench is filled with a first wavelength conversion material and emits a first color light, and the second trench is filled with a second wavelength conversion material and emits a second color light; wherein the three pixels, the first trench, and the second trench constitute a light-emitting display unit. The light-emitting display unit displays in color when it is turned on.

[0017] In some embodiments, the display component includes at least a first trench, a second trench, and a third trench formed by the gaps between four pixels. The first trench is filled with a first wavelength conversion material and emits a first color light, the second trench is filled with a second wavelength conversion material and emits a second color light, and the third trench is filled with transparent adhesive and emits a third color light. The four pixels and the first, second, and third trenches constitute a light-emitting display unit. When the light-emitting display unit is turned on, it displays in color.

[0018] In some embodiments, the pixel is a micro-light-emitting diode (LED). The micro-LED has a first wavelength. The smallest side of the micro-LED's core is less than or equal to 5 micrometers, and / or the longest side of the micro-LED's core is less than or equal to 5 micrometers, or the largest diameter of the light-emitting region's cross-section is less than or equal to 5 micrometers. The cross-sectional area of ​​the micro-LED is between 0 and 25 square micrometers, such as in a Micro LED. The cross-sectional area of ​​the micro-LED is between 25 square micrometers and 100 square micrometers, such as in Micro LEDs and Mini LEDs.

[0019] In some embodiments, the emission wavelength of the micro LED is between 455nm and 470nm, in which case the emitted light from the micro LED can be blue. In other embodiments, the emission wavelength of the micro LED is between 620nm and 650nm, in which case the emitted light from the micro LED can be red.

[0020] In some embodiments, the spacing between the centers of two adjacent pixels is between 1 micrometer and 5 micrometers, or between 5 micrometers and 10 micrometers. This can be understood as a small spacing between adjacent pixels in the display assembly, which is more suitable for display assemblies composed of Mini LEDs or Micro LEDs.

[0021] In some embodiments, the maximum horizontal dimension of the upper surface of the light-emitting region in the micro-LED is between 0.1 micrometers and 2.5 micrometers. The ratio between the area of ​​the side surface of the micro-LED and the area of ​​the upper surface of the light-emitting region is 1.25 to 1.5 or 1.5 to 8. Having a larger side surface area than the upper surface area increases the light emission from the side surface of the light-emitting region in the micro-LED.

[0022] In some embodiments, the angle between the side (or sidewall) of the micro-LED and the horizontal direction is between 50 and 60 degrees, or between 60 and 70 degrees. In this case, the area of ​​the side of the micro-LED and the light emission of that area are closer to the design values ​​of the product. In a preferred example, the angle between the side (or sidewall) of the micro-LED and the horizontal direction is between 55 and 65 degrees.

[0023] In some embodiments, a pixel includes a reflective layer formed on the upper surface of the light-emitting area of ​​the pixel and the surface of at least one sidewall. One of two pixels adjacent to each trench has a reflective layer on its side, while the other pixel does not. The reflective layer comprises at least one of Cr, Al, Ag, Pt, Au, DBR, Ni, and Ti, or any combination of these materials, to increase the amount of light emitted or reflected by the pixel toward the trench.

[0024] In some embodiments, the display component further includes a protective layer. In one example, the protective layer is formed at least above the first trench, the second trench, and the reflective layer, and covers the first wavelength conversion material and the second wavelength conversion material to provide protection such as a protective layer and impact protection over the reflective layer, the first wavelength conversion material, and the second wavelength conversion material. In another example, the protective layer is formed at least above the openings of the first trench, the second trench, and the third trench, and above the reflective layer, and covers the transparent adhesive, the first wavelength conversion material, and the second wavelength conversion material to provide protection such as a protective layer and impact protection over the reflective layer, the transparent adhesive, the first wavelength conversion material, and the second wavelength conversion material. The protective layer is preferably an optically transparent protective layer, which may be made of a transparent adhesive to reduce adverse effects on the emitted light brightness.

[0025] In some embodiments, the first wavelength conversion material is a first quantum dot material, and the second wavelength conversion material is a second quantum dot material. In a preferred example, the first quantum dot material is a green quantum dot, the second quantum dot material is a red quantum dot, the first color light is green light, the second color light is red light, and the third color light is blue light, thereby enabling a color display when the display component is turned on.

[0026] To achieve at least one or more of the advantages of the present invention, an embodiment of the present invention provides a display device, including a driving substrate and a display component, an array of display components disposed on the driving substrate, and the display component having the structure described above, wherein when the display device is turned on for display, it displays in color.

[0027] Based on the design concept of the technical solution of the present invention, the following embodiments are provided to further illustrate the inventive concept of the present invention.

[0028] Detailed Implementation Examples Please see Figure 1 , Figure 1This is a cross-sectional schematic diagram of an embodiment of the display component of the present invention. To achieve at least one or more of the aforementioned advantages, an embodiment of the present invention provides a display component 1, comprising at least three pixels 20, 20', and 20'', with each pixel 20, 20', and 20'' having a substantially identical structural configuration. A first groove 30 is formed between pixels 20 and 20', and a second groove 40 is formed between pixels 20' and 20''. The first groove 30 is filled with a first wavelength conversion material and emits a first color light, and the second groove 40 is filled with a second wavelength conversion material and emits a second color light. The surface of pixel 20 away from the first groove 30 ( Figure 1 The area to the left of pixel 20 is the light-emitting surface, emitting a third color of light. The three pixels 20 / 20' / 20'', along with the first groove 30 and the second groove 40, constitute a light-emitting display unit. When the light-emitting display unit is turned on, it displays in color.

[0029] Combination Figure 1 See Figure 2 , Figure 2 This is a cross-sectional schematic diagram of another embodiment of the display component of the present invention. To achieve at least one or more of the aforementioned advantages, one embodiment of the present invention provides a display component 1, comprising at least four pixels 20, 20', 20'', 20''', with each pixel 20, 20', 20''' having a substantially identical structural configuration. A first groove 30 is formed between pixels 20 and 20', a second groove 40 is formed between pixels 20' and 20'', and a third groove 50 is formed between pixels 20'' and 20'''. The first groove 30 is filled with a first wavelength conversion material and emits a first color light, the second groove 40 is filled with a second wavelength conversion material and emits a second color light, and the third groove 50 is filled with transparent adhesive and emits a third color light. The four pixels 20 / 20' / 20'' / 20''', as well as the first groove 30, the second groove 40, and the third groove 50, constitute a light-emitting display unit. The light-emitting display unit displays in color when it is turned on.

[0030] Figure 1 and Figure 2In the example, pixels 20, 20', 20'', and 20''' are micro-light-emitting diodes (LEDs), such as Mini LEDs and Micro LEDs. Preferably, pixels 20, 20', 20'', and 20''' are Micro LEDs. The micro-LEDs can be vertically structured LEDs or horizontally structured LEDs. Preferably, the micro-LEDs are vertically structured Micro LEDs. The smallest side of the micro-LED chip is less than or equal to 5 micrometers. The longest side of the micro-LED chip is less than or equal to 5 micrometers; in this case, the overall shape of the actually manufactured micro-LED tends to be cylindrical, or each chip is a spherical particle. The maximum diameter of the cross-section of the light-emitting area in the micro-LED is less than or equal to 5 micrometers. The area of ​​the lateral cross-section of the micro-LED is between 0 and 25 square micrometers, such as in Micro LEDs. The area of ​​the lateral cross-section of the micro-LED is between 25 square micrometers and 100 square micrometers, such as in Micro LEDs and Mini LEDs. In other words, the lateral cross-section of a miniature light-emitting diode is close to a circle in order to increase the area of ​​the side surface of the light-emitting area and relatively reduce the area of ​​the upper surface of the light-emitting area.

[0031] The miniature light-emitting diode (LED) has a first wavelength, enabling monochrome display when emitted alone. In a preferred example, the LED emits light at a wavelength between 455 nm and 470 nm, emitting blue light when emitted alone. In another preferred example, the LED emits light at a wavelength between 620 nm and 650 nm, emitting red light when emitted alone.

[0032] The spacing D1 between the centers of two adjacent pixels 20 and 20' is between 1 micrometer and 5 micrometers, or between 5 micrometers and 10 micrometers. This can be understood as the display component 1 having a small or micro-pitch between adjacent pixels, resulting in a smaller space between them. To achieve more uniform light emission from the display component 1, the space between adjacent pixels can be fully utilized to improve light emission performance, making it more suitable for display components 1 composed of Mini LEDs and Micro LEDs.

[0033] like Figure 1 or Figure 2As shown, the micro LED 20 includes a first semiconductor layer 21, a light-emitting layer 22 (quantum well layer, MQWs), and a second semiconductor layer 23 stacked together. The surface of the first semiconductor layer 21 away from the light-emitting layer 22 is the upper surface S1 of the light-emitting region in the micro LED 20. In a preferred example, the maximum horizontal dimension of the upper surface S1 of the light-emitting region in the micro LED is between 0.1 micrometers and 2.5 micrometers. The ratio between the area of ​​the side surface of the micro LED 20 and the area of ​​the upper surface S1 of the light-emitting region is 1.25~1.5 or 1.5~8. This can be understood as follows: in small-sized LEDs like Micro LEDs, the overall chip size is small, and the area of ​​the side surface of the light-emitting region in the chip is slightly larger or much larger than the area of ​​the upper surface S1 of the light-emitting region, thus fully and effectively utilizing the side surface of the light-emitting region in the micro LED 20 to increase the total light output.

[0034] The angle α between the side of the micro-LED 20 and the horizontal direction is between 50° and 70°. In some examples, the angle α between the side of the micro-LED 20 and the horizontal direction is between 50° and 60°. In other examples, the angle α between the side of the micro-LED 20 and the horizontal direction is between 60° and 70°. In a preferred example, the angle α between the side of the micro-LED 20 and the horizontal direction is between 55° and 65°.

[0035] The angle α between the side surface of the micro LED 20 and the horizontal direction represents the tilt of the side surface. The greater the tilt of the side surface of the micro LED 20, the larger the area (surface area) of the side surface. When the maximum horizontal dimension of the upper surface S1 of the light-emitting area in the micro LED 20 is minimized, the angle α between the side surface of the micro LED 20 and the horizontal direction approaches 90°, and the upper surface S1 of the light-emitting area in the micro LED 20 approaches its minimum value. At this point, the ratio between the area of ​​the side surface of the micro LED 20 and the area of ​​the upper surface S1 of the light-emitting area approaches its maximum value, as shown in Figure 8.

[0036] When the maximum horizontal dimension of the upper surface S1 of the light-emitting area in the micro-LED 20 reaches a preset maximum value, and the angle α between the side surface of the micro-LED 20 and the horizontal direction is between 55° and 65°, the upper surface S1 of the light-emitting area in the micro-LED 20 tends to its maximum value, and the ratio between the area of ​​the side surface of the micro-LED 20 and the area of ​​the upper surface S1 of the light-emitting area tends to its minimum value, such as 1.25. At this time, the area of ​​the side surface of the micro-LED 20 reaches the designed maximum value, which allows the synergistic light emission effect of the trench and the side surface of the micro-LED 20 to achieve optimal and effective utilization.

[0037] The miniature light-emitting diode 20 (also called a pixel) has an insulating layer 60. The insulating layer 60 is formed in a portion of the upper surface S1 and sidewall region of the light-emitting area in the miniature light-emitting diode 20 to provide insulation protection for the miniature light-emitting diode 20 and ensure its photoelectric performance. A transparent conductive layer 70 is formed on the insulating layer 60 to facilitate the current spread in the miniature light-emitting diode 20.

[0038] Preferably, pixel 20 includes a reflective layer 80 formed on the surface of the light-emitting area S1 and at least one sidewall of the pixel. The reflective layer 80 can be one of Cr, Al, Ag, Pt, Au, DBR (Distributed Bragg Reflector), Ni, Ti, or any combination of these materials to increase the amount of light emitted or reflected from the pixel toward the trenches 30, 40, 50.

[0039] Combination Figure 1 , Figure 2 See Figure 3 In each pair of pixels adjacent to trenches 30, 40, and 50, one pixel has a reflective layer 80 on its side, while the other pixel does not. This mainly refers to the sides of two adjacent pixels facing the same trench 30, 40, or 50. The first wavelength conversion material is a first quantum dot material, and the second wavelength conversion material is a second quantum dot material.

[0040] See you again Figure 1 The following explanation uses pixel 20 as an example of monochromatic blue light emission. Among pixels 20 and 20' adjacent to the first trench 30, the side of pixel 20' facing the first trench 30 does not have a reflective layer 80. This side of pixel 20' is the main light-emitting surface of the first trench 30, and the light from the light-emitting area 22 in pixel 20' is emitted into the first trench 30 through this side. The side of pixel 20 facing the first trench 30 and the upper surface S1 of the light-emitting area are provided with reflective layers 80. The light emitted from the side of pixel 20' facing the first trench 30 is reflected by the reflective layer 80 and then emitted towards the light-emitting surface of the first trench 30. Simultaneously, the reflective layer 80 on the side of pixel 20 facing the first trench 30 and the upper surface S1 of the light-emitting area prevents light from the light-emitting area 22 in pixel 20 from entering the first trench 30, avoiding cross-contamination and improving the uniformity and purity of monochromatic light emission from the first trench 30.

[0041] The surface of pixel 20 on the side away from the first trench 30 ( Figure 1The left side region of pixel 20 (the area in the middle) does not have a reflective layer 80, and this side serves as the light-emitting surface of pixel 20. Blue light can be emitted from the left side of pixel 20. In a preferred example, the first trench 30 is filled with a first wavelength conversion material and emits a first color light. The first wavelength conversion material can convert the blue light emitted by pixel 20' into green light. At this time, the first color light is green light.

[0042] In the pixels 20' and 20'' adjacent to the second trench 40, a reflective layer 80 is provided on the side of pixel 20'' facing the second trench 40 and on the upper surface S1 of the light-emitting area, to reflect the light emitted from the side of pixel 20'' facing the second trench 40 back to the light-emitting surface of the second trench 40 for emission. In the example shown, the second trench 40 is filled with a second wavelength conversion material and emits a second color light. The second wavelength conversion material can convert the blue light emitted by pixel 20'' into red light. At this time, the second color light is red light.

[0043] Figure 1 In the example, three pixels 20 / 20' / 20'', the first groove 30, and the second groove 40 constitute a light-emitting display unit. The blue light emitted from the left side of pixel 20, the green light in the first groove 30, and the red light in the second groove 40 enable the display component 1 to display in color.

[0044] Combined again Figure 1 See Figure 2 In the pixels 20'' and 20''' adjacent to the third trench 50, a reflective layer 80 is provided on the side of pixel 20''' facing the third trench 50 and on the upper surface S1 of the light-emitting area, so as to reflect the light emitted from the side of pixel 20''' facing the third trench 50 to the light-emitting surface of the third trench 50 for emission. In the example shown, the third trench 50 is filled with transparent adhesive so as to emit the blue light emitted by pixel 20''' towards the third trench 50 through the transparent adhesive. Figure 2 In the example, four pixels 20 / 20' / 20'' / 20''', along with the first groove 30, the second groove 40, and the third groove 50, constitute a light-emitting display unit. The green, red, and blue light emitted by the first groove 30, the second groove 40, and the third groove 50, respectively, enable the display component 1 to display in color.

[0045] The first wavelength conversion material and the second wavelength conversion material can be different quantum dot materials. In other examples, the first quantum dot material filled in the first trench 30 is red quantum dots, and the first color light in the first trench 30 is red light. The second quantum dot material filled in the second trench 40 is green quantum dots, and the second color light in the second trench 40 is green light.

[0046] In a preferred example, the display component 1 may further include a protective layer 90. The protective layer 90 is formed at least in the first trench 30, the second trench 40, and the third trench 50 (e.g., Figure 2 Above the reflective layer 80 and the first wavelength conversion material, the second wavelength conversion material, and the transparent adhesive, the protective layer 90 provides protection against impacts and other factors. Preferably, the protective layer 90 is an optically transparent protective layer, which may be made of a transparent adhesive to reduce adverse effects on the emitted light brightness and ensure the uniformity of light emission in full-color or colorized display of the display component 1.

[0047] like Figure 1 The protective layer 90 covers the reflective layer 80 on the upper surface of the light-emitting area of ​​each pixel, as well as the light-emitting surfaces of the first trench 30 and the second trench 40, thereby providing protection such as a protective layer and anti-collision to the reflective layer 80, the first wavelength conversion material, and the second wavelength conversion material.

[0048] In the display component 1 composed of miniature LEDs, the area of ​​the upper surface of the light-emitting surface of the miniature LED is smaller than the area of ​​the sidewall of the light-emitting surface, and the space between two adjacent miniature LEDs is larger than the area of ​​the upper surface of the light-emitting surface of the miniature LED. Different quantum dot materials are filled in the space between two adjacent miniature LEDs to excite different monochromatic lights. The sidewall area of ​​the light-emitting surface of the miniature LED and the space between two adjacent miniature LEDs are fully utilized, so that the display component 1 can be displayed in color when it is turned on.

[0049] Please refer to it again. Figure 2 To achieve at least one or more of the advantages of this invention, one embodiment of the present invention provides a display device, including a driving substrate 200 and a display component 1. The display component 1 is arrayed on the driving substrate 200 and has the structure described above. When the display device is turned on, it displays in color. When the display device is an AR display screen, the driving substrate 200 is a CMOS substrate, and the driving substrate 200 and the pixels can be connected and connected via metal solder joints 201.

[0050] Please combine Figure 2 See Figures 4 to 11 , Figures 4 to 11 This is a schematic diagram of the fabrication process of a display component according to an embodiment of the present invention. To achieve at least one or more of the advantages of the present invention, an embodiment of the present invention provides a method for fabricating a display component, the main fabrication steps of which are described below.

[0051] like Figure 4As shown, a driving substrate 200 and an epitaxial structure 20 are first formed. The driving substrate 200 has a plurality of metal solder joints 201 for electrical connection with the epitaxial structure 20. A first bonding layer 301 is provided on the surface of the driving substrate 200 on the side with the metal solder joints 201. In one example, the driving substrate 200 is a silicon-based CMOS driving backplane. The first bonding layer 301 is a metal bonding layer formed by vapor deposition.

[0052] An epitaxial structure 20 is formed on one side surface of a growth substrate 100. Above the growth substrate 100, the epitaxial structure 20 includes, from bottom to top, a first semiconductor layer 21, a light-emitting layer 22 (quantum well layer, MQWs), and a second semiconductor layer 23. A second bonding layer 302 is provided on the surface of the second semiconductor layer 23 away from the light-emitting layer 20. In a preferred example, a transparent conductive layer 400 is provided between the second semiconductor layer 23 and the second bonding layer 302 to improve the electrical performance of the second semiconductor layer 23.

[0053] like Figure 5 As shown, the epitaxial structure 20 is bonded to the first bonding layer 301 on the driving substrate 200 through the second bonding layer 302, and the growth substrate 100 of the epitaxial structure 200 is removed.

[0054] like Figure 6 and Figure 7 As shown, the bonded epitaxial structure 20, transparent conductive layer 40, first bonding layer 301, and second bonding layer 302 are etched to form independent, spaced-apart cores, thereby forming a pixel array. In actual manufacturing, the light-emitting areas of the pixels can be fabricated using photolithography and IBE etching processes. The transparent conductive layer 40, first bonding layer 301, and second bonding layer 302 can be etched using photolithography and IBE etching processes. On the driving substrate 200, trenches 30, 40, and 50 are provided between adjacent pixels.

[0055] like Figure 8 As shown, an insulating layer 60 is formed above the pixel. The insulating layer 60 covers a portion of the upper surface and side area of ​​the light-emitting area of ​​the pixel, as well as a portion of the surface of the driving substrate 200 facing the pixel, thereby achieving insulation protection. Figure 9 As shown, a transparent conductive layer 70 is fabricated on the insulating layer 60 to facilitate current propagation in the epitaxial structure 20.

[0056] like Figure 10 As shown, a reflective layer 80 is provided on the upper surface of the light-emitting area of ​​each pixel and on one side of each pixel. The reflective layer 80 can be one of Cr, Al, Ag, Pt, Au, DBR, Ni, Ti or any combination of these materials, to increase the amount of light emitted or reflected by the pixel toward the trenches 30, 40, 50.

[0057] like Figure 11 As shown, at least three adjacent pixels are respectively connected by a first trench 30, a second trench 40, and a third trench 50. The first trench 30 is filled with a first quantum dot material and emits a first color of light. The second trench 40 is filled with a second quantum dot material and emits a second color of light. The third trench 50 is filled with a transparent adhesive and emits a third color of light. In one specific embodiment, the third trench 50 is filled with silicon dioxide (SiO2) and emits a third color of light, either blue or red. Both the first and second quantum dot materials are selected from at least one of group II-VI quantum dots, group III-V quantum dots, and tack crystal quantum dots.

[0058] In an actual manufacturing process, the first quantum dot material and the second quantum dot material can be coated, photolithographically ...

[0059] In one example, the first quantum dot material filled in the first trench 30 is red quantum dots, and the first color light in the first trench 30 is red light. The second quantum dot material filled in the second trench 40 is green quantum dots, and the second color light in the second trench 40 is green light. In another example, the first quantum dot material filled in the first trench 30 is green quantum dots, and the first color light in the first trench 30 is green light. The second quantum dot material filled in the second trench 40 is red quantum dots, and the second color light in the second trench 40 is red light.

[0060] Of course, based on the above-described structural embodiment of display component 1, those skilled in the art can also set other corresponding display component 1 structures as needed.

Claims

1. A display component, characterized in that, include: It must include at least three pixels; The three pixels are connected by at least a first trench and a second trench. The first trench is filled with a first wavelength conversion material and emits a first color light, and the second trench is filled with a second wavelength conversion material and emits a second color light. The three pixels, the first groove, and the second groove constitute a light-emitting display unit. Each of the pixels includes a reflective layer that continuously covers the surface of the light-emitting area of ​​the pixel to at least one sidewall.

2. The display component according to claim 1, characterized in that: Of the two pixels adjacent to the first trench or the second trench, one pixel has the reflective layer on its side and the other pixel does not have the reflective layer on its side; the reflective layer includes at least one of Cr, Al, Ag, Pt, Au, DBR, Ni, Ti or any combination of these materials.

3. The display component according to claim 1, characterized in that: The pixel is a micro light-emitting diode, the micro light-emitting diode has a first wavelength, the smallest side of the core of the micro light-emitting diode is less than or equal to 5 micrometers, and / or the longest side of the core of the micro light-emitting diode is less than or equal to 5 micrometers or the maximum diameter of the cross-section of the light-emitting area is less than or equal to 5 micrometers; the area of ​​the transverse cross-section of the micro light-emitting diode is between 0 and 25 square micrometers, or between 25 square micrometers and 100 square micrometers.

4. The display component according to claim 1, characterized in that: The emission wavelength of the micro LED is between 455nm and 470nm, or between 620nm and 650nm.

5. The display component according to claim 1, characterized in that: The distance between the centers of two adjacent pixels is between 1 micrometer and 5 micrometers, or between 5 micrometers and 10 micrometers; The maximum horizontal dimension of the upper surface of the light-emitting area in the micro LED is between 0.1 micrometers and 2.5 micrometers; the ratio between the area of ​​the side surface of the micro LED and the area of ​​the upper surface of the light-emitting area is 1.25~1.5 or 1.5~8.

6. The display component according to claim 1, characterized in that: The angle between the side of the micro LED and the horizontal direction is between 50 degrees and 60 degrees, or between 60 degrees and 70 degrees.

7. The display component according to claim 1, characterized in that: The angle between the side of the micro LED and the horizontal direction is between 55 degrees and 65 degrees.

8. The display component according to claim 1, characterized in that: It also includes a protective layer, formed at least above the first trench and the second trench and above the reflective layer, and covering the reflective layer, the first wavelength conversion material and the second wavelength conversion material.

9. The display component according to claim 1, characterized in that: The first wavelength conversion material is a first quantum dot material, and the second wavelength conversion material is a second quantum dot material; The first quantum dot material is a green quantum dot, and the first color light is green light; the second quantum dot material is a red quantum dot, and the second color light is red light.

10. A display device, characterized in that, include: driving substrate, and The display component array is disposed on the driving substrate, and the display component is the display component as described in any one of claims 1 to 9; When the display device is turned on, it displays in color.

Images