Electroplating apparatus and wafer cleaning method using the same

Abstract

This invention discloses an electroplating apparatus and a wafer cleaning method using the same. The electroplating apparatus includes a wafer clamp and an electroplating chamber. The wafer clamp is used to position and connect the wafer. The electroplating chamber includes an electroplating tank and a cleaning water outlet. The electroplating tank is used to hold the electroplating solution, and the cleaning water outlet is used to spray cleaning water onto the wafer. The electroplating apparatus also includes a liquid-holding component, which can switch between a first state and a second state. When the liquid-holding component is in the first state, the wafer clamp can drive the wafer to rotate around its axis, so that the cleaning water sprayed from the cleaning water outlet onto the wafer falls onto the liquid-holding component, thereby reducing the amount of cleaning water falling into the electroplating tank. When the liquid-holding component is in the second state, the wafer clamp can be displaced to allow the wafer to enter and exit the electroplating tank, avoiding interference with other processes such as electroplating the wafer in the electroplating tank. The above configuration reduces the dilution of the electroplating solution in the electroplating tank by the cleaning water.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and in particular to an electroplating apparatus and a wafer cleaning method using the same. Background Technology

[0002] In semiconductor manufacturing and precision electroplating (such as Au / Ag alloy plating), ECD (Electro Chemical Deposition) plating is a key technology used to form a uniform metal layer on wafers. After plating, the wafer needs to be cleaned to remove residual plating solution and other impurities. This step is crucial for ensuring a clean wafer surface and preventing defects in subsequent processes.

[0003] Currently, a common cleaning method is "in-situ cleaning," where the wafer, after electroplating and being lifted above the plating tank, remains in the plating chamber and is directly sprayed with cleaning water (such as deionized water) through a spray nozzle onto the high-speed rotating wafer surface to achieve cleaning and centrifugal drying. This method has the advantages of simple structure and high efficiency.

[0004] However, existing in-situ cleaning techniques have the following problems: during the cleaning process, a large amount of cleaning water thrown off the high-speed rotating wafer inevitably splashes everywhere, and a considerable portion of it falls directly into the electroplating tank below. This mixing of cleaning water continuously dilutes the electroplating solution in the electroplating tank.

[0005] The dilution of electroplating solutions can lead to fluctuations in the concentration of key components, disrupting the process window and affecting the uniformity and defect rate of the coating. Changes in solution temperature and conductivity can cause process instability. Frequent analysis and replenishment of solution components can increase operating costs and the amount of chemical waste. Summary of the Invention

[0006] The technical problem to be solved by the present invention is to overcome the defect in the prior art where a large proportion of the cleaning water in the electroplating device falls into the electroplating tank, and to provide an electroplating device and a wafer cleaning method using the same.

[0007] The present invention solves the above-mentioned technical problems through the following technical solution: An electroplating apparatus includes a wafer clamp and an electroplating chamber. The wafer clamp is used for positioning and connecting a wafer. The electroplating chamber includes an electroplating tank and a cleaning water outlet. The electroplating tank is used to hold an electroplating solution, and the cleaning water outlet is used to spray cleaning water onto the wafer. The electroplating apparatus also includes a liquid holding component, which is capable of switching between a first state and a second state. When the liquid-containing component is in the first state, the wafer jig can drive the wafer to rotate about the axial direction so that the cleaning water sprayed from the cleaning water outlet onto the wafer falls onto the liquid-containing component; When the liquid-containing component is in the second state, the wafer jig can be displaced to allow the wafer to move in and out of the electroplating tank.

[0008] In this technical solution, by providing the electroplating apparatus, a liquid-holding component that can switch between a first state and a second state is added: when the liquid-holding component is in the first state, it can catch the cleaning water splashed off the wafer, thereby reducing the amount of cleaning water falling into the electroplating tank; when the liquid-holding component switches to the second state, it makes room for the displacement of the wafer fixture, i.e., the wafer entering and exiting the electroplating tank, avoiding interference with other processes such as wafer electroplating in the electroplating tank. The above configuration, while being compatible with other processes, also reduces the dilution of the electroplating solution in the electroplating tank by the cleaning water, ensuring process stability and improving product yield.

[0009] Preferably, the liquid-containing component is located on one side of the electroplating chamber; The angle between the axial direction of the wafer and the horizontal plane is defined as the first cleaning angle; When the liquid-containing component is in the first state, the wafer jig can drive the wafer to rotate around the axis and adjust the first cleaning angle to 0°~5° so that the cleaning water on the wafer falls onto the liquid-containing component.

[0010] In this technical solution, the above-mentioned settings enable the wafer to be slightly tilted during rotational cleaning. This slight tilt angle utilizes gravity to guide the directional flow of cleaning water on the wafer surface, working in conjunction with the centrifugal force generated by rotation to ensure that the cleaning water is more accurately thrown onto the liquid-holding component, further reducing the risk of cleaning water dripping into the electroplating tank.

[0011] Preferably, the electroplating chamber further includes a recovery tank, which is located above the electroplating tank; The liquid-containing component is located inside the recovery tank.

[0012] In this technical solution, the integration of the electroplating device is improved by the above-mentioned arrangement, so that the liquid holding component does not need to occupy additional space. Since the liquid holding component is located in the recovery tank, the cleaning wastewater collected by it can be discharged directly or indirectly into the recovery tank for treatment using the existing waste liquid discharge structure in the recovery tank.

[0013] Preferably, when the liquid-containing component is in the first state, the distance from the liquid-containing component to the center of the recovery tank is defined as the first distance; When the liquid-containing component is in the second state, the distance from the liquid-containing component to the center of the recovery tank is the second distance; The first distance is less than the second distance.

[0014] In this technical solution, the above-mentioned settings enable the liquid-holding component to be closer to the center of the recovery tank in the first state, maximizing the coverage of the area where the cleaning water falls and ensuring the catch-up effect; the second distance is relatively large, that is, in the second state, the liquid-holding component is far away from the center of the recovery tank, providing sufficient space for the lifting and moving of the wafer fixture, thereby improving the safety and reliability of the electroplating device.

[0015] Preferably, the distance from the inner edge of the top of the recycling tank to the center of the recycling tank is defined as the recycling distance; The first distance is less than the recovery distance, which is less than the second distance.

[0016] In this technical solution, by setting the first distance to be less than the recovery distance, it is ensured that the liquid-containing component is located within the effective area of ​​the recovery tank opening during operation, so as to block the cleaning water; the second distance is set to be greater than the recovery distance, which ensures that the liquid-containing component is completely hidden inside the recovery tank in the second state and will not cause any obstruction to the entry and exit of the wafer.

[0017] Preferably, the liquid-containing component includes a liquid-containing tray and a recovery pipe; One end of the recovery pipe is connected to the liquid collection tray, and the other end is connected to the recovery tank.

[0018] In this technical solution, through the above-mentioned setup, the wastewater is quickly and centrally discharged into the recovery tank via a recovery pipe connected to the liquid collection tray, so as to avoid the accumulation and splashing of cleaning water in the liquid collection tray, and further reduce the dilution of the electroplating solution in the electroplating tank by the cleaning water.

[0019] Preferably, the liquid-containing component further includes a driving component and a telescopic component; The driving component, the telescopic component, and the liquid collection tray are connected in sequence to drive the liquid collection tray to switch between the first state and the second state.

[0020] In this technical solution, by setting up the combination of driving component, telescopic component and liquid collection tray, the extension position of liquid collection tray can be precisely controlled according to different wafer sizes or different process requirements to adapt to different cleaning water splash ranges, and can be coordinated with the movement of wafer fixture, thereby improving the automation level of the electroplating device.

[0021] Preferably, one end of the recovery tube is connected to the outer end of the liquid collection tray.

[0022] In this technical solution, the above-mentioned arrangement utilizes the tendency of the cleaning water to move towards the outside of the liquid collection tray under the action of centrifugal force, thereby maximizing the emptying of the liquid collection tray and reducing the amount of cleaning water remaining or flowing back into the liquid collection tray.

[0023] A wafer cleaning method employing the electroplating apparatus described above; The wafer cleaning method includes the following steps: The liquid-containing component switches to the second state; The wafer fixture is moved to the cleaning position; The liquid-containing component switches to the first state; The cleaning water outlet sprays cleaning water onto the wafer, and the wafer clamp drives the wafer to rotate about the axis so that the cleaning water sprayed onto the wafer from the cleaning water outlet falls onto the liquid holding member; The cleaning water outlet stops spraying cleaning water; The wafer fixture is reset, and the liquid-containing component is switched to the second state.

[0024] In this technical solution, by using this wafer cleaning method, the state changes of the liquid-containing component and the actions of the wafer fixture, cleaning water outlet, etc., are coordinated with each other, further improving process stability: when the liquid-containing component is in the first state, it can receive the cleaning water thrown off the wafer, thereby reducing the amount of cleaning water falling into the electroplating tank; when the liquid-containing component switches to the second state, it makes room for the displacement of the wafer fixture, that is, the entry and exit of the wafer into the electroplating tank, avoiding interference with other processes such as the electroplating of the wafer in the electroplating tank.

[0025] Preferably, the step of spraying cleaning water onto the wafer from the cleaning water outlet, and driving the wafer jig to rotate about an axial direction so that the cleaning water sprayed onto the wafer from the cleaning water outlet falls onto the liquid-holding member includes: The cleaning water outlet sprays cleaning water onto the wafer, and the wafer jig drives the wafer to rotate at a low speed around the axis so that the cleaning water sprayed onto the wafer from the cleaning water outlet falls onto the liquid holding member; The cleaning water outlet stops spraying cleaning water onto the wafer, and the wafer jig drives the wafer to rotate at high speed around the axis so that the residual cleaning water on the wafer falls onto the liquid holding component.

[0026] In this technical solution, the cleaning process is divided into two stages: low-speed rotating spray cleaning and high-speed rotating spin-drying. Low-speed rotation, combined with spraying, removes residual electroplating solution from the wafer surface; subsequently, spraying stops and high-speed rotation continues to spin-dry any remaining water film on the wafer surface. The high-speed rotation stage eliminates the need for continuous water spraying, saving on cleaning water consumption. Simultaneously, both stages ensure that wastewater is reliably splashed onto the liquid-collecting component, achieving a perfect combination of efficient cleaning and thorough protection. Furthermore, the high-speed rotation stage reduces the residual water film on the wafer surface, further lowering the risk of a small amount of residual solution dripping into the electroplating tank after cleaning.

[0027] The positive and progressive effects of this invention are as follows: By providing this electroplating apparatus, a liquid-holding component that can switch between a first state and a second state is added: when the liquid-holding component is in the first state, it can catch the cleaning water splashed off the wafer, thereby reducing the amount of cleaning water falling into the electroplating tank; when the liquid-holding component switches to the second state, it makes room for the displacement of the wafer fixture, i.e., the wafer entering and exiting the electroplating tank, avoiding interference with other processes such as wafer electroplating in the electroplating tank. The above configuration, while being compatible with other processes, also reduces the dilution of the electroplating solution in the electroplating tank by the cleaning water, ensuring process stability and improving product yield.

[0028] By using this wafer cleaning method, the state changes of the liquid-containing component and the actions of the wafer fixture, cleaning water outlet, etc., are coordinated with each other, further improving process stability: when the liquid-containing component is in the first state, it can catch the cleaning water thrown off the wafer, thereby reducing the amount of cleaning water falling into the electroplating tank; when the liquid-containing component switches to the second state, it makes room for the displacement of the wafer fixture, that is, the wafer entering and leaving the electroplating tank, avoiding interference with other processes such as the electroplating of the wafer in the electroplating tank. Attached Figure Description

[0029] Figure 1 This is a schematic diagram of the electroplating apparatus of Embodiment 1 of the present invention during the wafer electroplating process.

[0030] Figure 2 This is a schematic diagram of the main structure of the electroplating apparatus of Embodiment 1 of the present invention during the wafer cleaning process.

[0031] Figure 3 This is a top view of the electroplating apparatus of Embodiment 1 of the present invention during the wafer electroplating process.

[0032] Figure 4 This is a flowchart of the wafer cleaning method according to Embodiment 1 of the present invention.

[0033] Figure 5 This is a schematic diagram of the electroplating apparatus of Embodiment 2 of the present invention during the wafer cleaning process.

[0034] Explanation of reference numerals in the attached figures: Wafer 1 Electroplating device 2 Wafer fixture 21 Electroplating chamber 22 Electroplating tank 221 Electroplating solution 222 Cleaning water outlet 223 Recycling tank 224 Center 2241 of the recycling tank Liquid-containing component 23 Liquid collection tray 231 Recycling tube 232 Drive component 233 Telescopic component 234 Flow guide channel 235 Detailed Implementation

[0035] The present invention will be further illustrated by way of embodiments below, but the present invention is not limited to the scope of the embodiments described herein.

[0036] Example 1

[0037] like Figures 1-3 As shown, this embodiment provides an electroplating apparatus 2, which includes a wafer clamp 21 and an electroplating chamber 22. The wafer clamp 21 is used to position and connect the wafer 1. The electroplating chamber 22 includes an electroplating tank 221 and a cleaning water outlet 223. The electroplating tank 221 is used to hold the electroplating solution 222, and the cleaning water outlet 223 is used to spray cleaning water onto the wafer 1.

[0038] The electroplating apparatus 2 also includes a liquid holding component 23, which can switch between a first state and a second state.

[0039] like Figure 2 As shown, when the liquid-containing component 23 is in the first state, the wafer jig 21 can drive the wafer 1 to rotate around axis A so that the cleaning water sprayed from the cleaning water outlet 223 onto the wafer 1 falls onto the liquid-containing component 23.

[0040] like Figure 1 As shown, when the liquid-containing component 23 is in the second state, the wafer jig 21 can be displaced so that the wafer 1 can move in and out of the electroplating tank 221.

[0041] In this technical solution, by providing the electroplating apparatus 2, a liquid-holding component 23 that can switch between a first state and a second state is added: when the liquid-holding component 23 is in the first state, it can receive the cleaning water splashed off the wafer 1, thereby reducing the amount of cleaning water falling into the electroplating tank 221; when the liquid-holding component 23 switches to the second state, it makes room for the displacement of the wafer clamp 21, that is, for the wafer 1 to enter and exit the electroplating tank 221, avoiding interference with other processes such as the electroplating of the wafer 1 in the electroplating tank 221. The above settings, while being compatible with other processes, also reduce the dilution of the electroplating solution 222 in the electroplating tank 221 by the cleaning water, ensuring process stability and improving product yield.

[0042] It should be noted that: although in this embodiment, reference Figure 1 and Figure 2 The switching between the first state and the second state is achieved by the displacement of the liquid-filling component 23. However, in other embodiments, it is not limited to this. It can also be achieved by the extension, contraction, expansion / retraction or any other means of changing the liquid-filling state of the liquid-filling component 23 itself.

[0043] In this embodiment, the liquid-holding component 23 is located on one side of the electroplating chamber 22; the angle between the axis A of the wafer 1 and the horizontal plane is defined as the first cleaning angle; when the liquid-holding component 23 is in the first state, the wafer jig 21 can drive the wafer 1 to rotate around the axis A and adjust the first cleaning angle to 0° (i.e., the wafer 1 is parallel to the ground), so that the wafer 1 can use the centrifugal force generated by the rotation to more accurately throw the cleaning water onto the liquid-holding component 23, further reducing the risk of cleaning water dripping into the electroplating tank 221.

[0044] In this embodiment, the electroplating chamber 22 also includes a recovery tank 224, which is located above the electroplating tank 221. The liquid holding component 23 is located inside the recovery tank 224 to improve the integration of the electroplating device 2, so that the liquid holding component 23 does not need to occupy additional space. Since the liquid holding component 23 is located inside the recovery tank 224, the cleaning wastewater it collects can be directly or indirectly discharged into the recovery tank 224 for treatment using the existing wastewater discharge structure in the recovery tank 224.

[0045] In this embodiment, when the liquid-holding component 23 is in the first state, the distance from the liquid-holding component 23 to the center 2241 of the recovery tank is defined as the first distance d1; when the liquid-holding component 23 is in the second state, the distance from the liquid-holding component 23 to the center 2241 of the recovery tank is defined as the second distance d2; d1 < d2. Thus, in the first state, the liquid-holding component 23 is closer to the center 2241 of the recovery tank, maximizing the coverage of the area where the cleaning water falls, ensuring effective catch-up; the second distance is relatively large, meaning that in the second state, the liquid-holding component 23 is further away from the center of the recovery tank 224, providing sufficient space for the lifting and moving of the wafer fixture 21, thus improving the safety and reliability of the electroplating apparatus 2.

[0046] In this embodiment, the distance from the inner edge of the top of the recycling tank 224 to the center 2241 of the recycling tank is defined as the recycling distance D; d1 < D < d2, which ensures that the liquid holding component 23 is located within the effective area of ​​the opening of the recycling tank 224 when working, so as to block the cleaning water, and also ensures that the liquid holding component 23 is completely hidden inside the recycling tank 224 in the second state, so as not to cause any obstruction to the entry and exit of the wafer 1.

[0047] In this embodiment, the liquid holding component 23 includes a liquid holding tray 231 and a recovery pipe 232; one end of the recovery pipe 232 is connected to the liquid holding tray 231 and the other end is connected to the recovery tank 224, so that the wastewater can be quickly and centrally discharged into the recovery tank 224 through the recovery pipe 232 connected to the liquid holding tray 231, so as to avoid the accumulation and splashing of cleaning water in the liquid holding tray 231, and further reduce the dilution of the electroplating solution 222 in the electroplating tank 221 by the cleaning water.

[0048] In this embodiment, the liquid holding component 23 further includes a driving component 233 and a telescopic component 234; the driving component 233, the telescopic component 234 and the liquid holding tray 231 are connected in sequence to drive the liquid holding tray 231 to switch between the first state and the second state. In this way, the extension position of the liquid holding tray 231 can be precisely controlled according to the wafer 1 of different sizes or different process requirements to adapt to different cleaning water splash ranges, and can be coordinated with the movement of the wafer clamp 21 to improve the automation level of the electroplating device 2.

[0049] In this embodiment, the drive unit 233 can be a high-precision electric linear module or a similar drive structure such as a cylinder.

[0050] It should be noted that, although in this embodiment, the liquid collection tray 231 is an arc-shaped tray that is positioned opposite to the cleaning water outlet 223, in other embodiments, the liquid collection tray 231 can be a ring or any other shape that meets the requirements, and can be located in any position that meets the process requirements. When the liquid collection tray 231 is large enough, a drainage structure such as a recovery pipe 232 may not be provided. Instead, the liquid can be drained by removing the liquid collection tray 231 or by providing an additional suction mechanism to remove the cleaning water.

[0051] In this embodiment, one end of the recovery pipe 232 is connected to the outer end of the liquid collection tray 231. It takes advantage of the tendency of the cleaning water to move towards the outside of the liquid collection tray 231 under the action of centrifugal force to empty the liquid collection tray 231 to the maximum extent and reduce the amount of cleaning water remaining or flowing back in the liquid collection tray 231.

[0052] In this embodiment, the main body of the liquid collection tray 231 is made of high-purity corrosion-resistant material (such as PFA, perfluoroalkoxy alkane), and a guide groove 235 is designed on the outside to work with the recovery pipe 232 to further empty the liquid collection tray 231.

[0053] It should be noted that the "outer side" here refers to the side away from the center 2241 of the recycling tank.

[0054] In this embodiment, the electroplating apparatus 2 also has an intelligent control system, which is integrated with the original main control system and can programmably control the extension and retraction sequence of the liquid tray 231, the tilt angle of the wafer clamp 21, the spray switch, and the start and stop of the auxiliary drying gas (such as hot nitrogen).

[0055] like Figure 4 As shown, this embodiment also provides a wafer 1 cleaning method, which uses the electroplating apparatus 2 as described above.

[0056] The steps of the wafer 1 cleaning method include: S1, Liquid-containing component 23 switches to the second state; S2, the wafer fixture 21 moves to the cleaning position; S3, Liquid-containing component 23 switches to the first state; S4. Cleaning water outlet 223 sprays cleaning water onto wafer 1, and wafer jig 21 drives wafer 1 to rotate around axis A so that the cleaning water sprayed from cleaning water outlet 223 onto wafer 1 falls onto liquid holding member 23. S5, cleaning water outlet 223 stops spraying cleaning water; S6, the wafer fixture 21 is reset, and the liquid-filled component 23 is switched to the second state.

[0057] In this way, by using this wafer 1 cleaning method, the state changes of the liquid holding component 23 and the actions of the wafer fixture 21, cleaning water outlet 223, etc., are coordinated with each other, further improving the process stability: when the liquid holding component 23 is in the first state, it can receive the cleaning water thrown off the wafer 1, thereby reducing the amount of cleaning water falling into the electroplating tank 221; when the liquid holding component 23 switches to the second state, it makes room for the displacement of the wafer fixture 21, that is, the entry and exit of the wafer 1 into the electroplating tank 221, avoiding interference with other process flows such as the electroplating of the wafer 1 in the electroplating tank 221.

[0058] It should be noted that the step of "switching the liquid-containing component 23 to the second state" includes both switching the liquid-containing component 23 from other states to the second state and keeping the liquid-containing component 23 in the second state continuously.

[0059] In this embodiment, step S4 includes: S41, cleaning water outlet 223 sprays cleaning water onto wafer 1, and wafer jig 21 drives wafer 1 to rotate at low speed around axis A, so that the cleaning water sprayed from cleaning water outlet 223 onto wafer 1 falls onto liquid holding member 23. S42, the cleaning water outlet 223 stops spraying cleaning water onto the wafer 1, and the wafer jig 21 drives the wafer 1 to rotate at high speed around axis A so that the residual cleaning water on the wafer 1 falls onto the liquid holding component 23.

[0060] In this technical solution, the cleaning process is divided into two stages: low-speed rotating spray cleaning and high-speed rotating spin drying. Low-speed rotation, combined with spraying, removes residual electroplating solution 222 from the surface of wafer 1; subsequently, spraying stops and high-speed rotation continues to spin dry any remaining water film on the surface of wafer 1. The high-speed rotation stage eliminates the need for continuous water spraying, saving on cleaning water consumption. Simultaneously, both stages ensure that wastewater is reliably splashed onto the liquid-collecting component 23, achieving a perfect combination of efficient cleaning and thorough protection. Furthermore, the high-speed rotation stage reduces the residual water film on the surface of wafer 1, further lowering the risk of a small amount of residual liquid dripping into the electroplating tank 221 after cleaning.

[0061] In this technical solution, the typical selection range for time value and rotation speed is as follows: low-speed rotation speed of S41 is 10-50 RPM; cleaning time of S41 is 20-100 sec; high-speed rotation speed of S42 is 500-1200 RPM. The above settings are conducive to wafer 1 being cleaned well and leaving as little cleaning water as possible.

[0062] Example 2

[0063] like Figure 5 As shown, this embodiment provides an electroplating apparatus 2, whose structure is largely the same as that of the electroplating apparatus 2 in Embodiment 1, except that: In this embodiment, the liquid-containing component 23 is located on one side of the electroplating chamber 22; the angle between the axis A of the wafer 1 and the horizontal plane is defined as the first cleaning angle; when the liquid-containing component 23 is in the first state, the wafer jig 21 can drive the wafer 1 to rotate around the axis A and adjust the first cleaning angle α=5°, so that the wafer 1 is in a slightly tilted state during rotation cleaning. This small tilt angle uses gravity to guide the cleaning water on the surface of the wafer 1 to flow in a directional manner, and works in conjunction with the centrifugal force generated by rotation, so that the cleaning water on the wafer 1 can be more accurately thrown onto the liquid-containing component 23, further reducing the risk of cleaning water dripping into the electroplating tank 221. Of course, in other embodiments, the first cleaning angle can also take other values ​​in the range of 0°~5° to achieve a similar effect.

[0064] To match the setting of the first cleaning angle, the angle between the axis of the cleaning water outlet 223 and the horizontal plane is defined as the second cleaning angle β (for ease of illustration, it is drawn here according to the angle of the protruding nozzle). The second cleaning angle β is usually taken as a value in the range of 25° to 35°, and the spray flow rate of the cleaning water outlet 223 can be controlled at 100-400ml / min to ensure that the wafer 1 can still be fully covered for cleaning even when the wafer 1 is tilted.

[0065] While specific embodiments of the present invention have been described above, those skilled in the art should understand that these are merely illustrative examples, and the scope of protection of the present invention is defined by the appended claims. Those skilled in the art can make various changes or modifications to these embodiments without departing from the principles and essence of the present invention, but all such changes and modifications fall within the scope of protection of the present invention.

Claims

1. An electroplating apparatus comprising a wafer clamp and an electroplating chamber, the wafer clamp being used for positioning and connecting a wafer, the electroplating chamber comprising an electroplating tank and a cleaning water outlet, the electroplating tank being used to hold an electroplating solution, and the cleaning water outlet being used to spray cleaning water onto the wafer, characterized in that: The electroplating apparatus also includes a liquid holding component, which is capable of switching between a first state and a second state. When the liquid-containing component is in the first state, the wafer jig can drive the wafer to rotate about the axial direction so that the cleaning water sprayed from the cleaning water outlet onto the wafer falls onto the liquid-containing component; When the liquid-containing component is in the second state, the wafer jig can be displaced to allow the wafer to move in and out of the electroplating tank.

2. The electroplating apparatus as described in claim 1, characterized in that, The liquid-containing component is located on one side of the electroplating chamber; The angle between the axial direction of the wafer and the horizontal plane is defined as the first cleaning angle; When the liquid-containing component is in the first state, the wafer jig can drive the wafer to rotate around the axis and adjust the first cleaning angle to 0°~5° so that the cleaning water on the wafer falls onto the liquid-containing component.

3. The electroplating apparatus as described in claim 1, characterized in that, The electroplating chamber also includes a recovery tank, which is located above the electroplating tank; The liquid-containing component is located inside the recovery tank.

4. The electroplating apparatus as described in claim 3, characterized in that, When the liquid-containing component is in the first state, the distance from the liquid-containing component to the center of the recovery tank is defined as the first distance; When the liquid-containing component is in the second state, the distance from the liquid-containing component to the center of the recovery tank is the second distance; The first distance is less than the second distance.

5. The electroplating apparatus as described in claim 4, characterized in that, The distance from the inner edge of the top of the recycling tank to the center of the recycling tank is defined as the recycling distance; The first distance is less than the recovery distance, which is less than the second distance.

6. The electroplating apparatus as described in claim 3, characterized in that, The liquid-containing component includes a liquid-containing tray and a recovery pipe; One end of the recovery pipe is connected to the liquid collection tray, and the other end is connected to the recovery tank.

7. The electroplating apparatus as described in claim 6, characterized in that, The liquid-containing component also includes a driving component and a telescopic component; The driving component, the telescopic component, and the liquid collection tray are connected in sequence to drive the liquid collection tray to switch between the first state and the second state.

8. The electroplating apparatus as described in claim 6, characterized in that, One end of the recovery tube is connected to the outer end of the liquid collection tray.

9. A wafer cleaning method, characterized in that, It employs the electroplating apparatus as described in any one of claims 1-8; The wafer cleaning method includes the following steps: The liquid-containing component switches to the second state; The wafer fixture is moved to the cleaning position; The liquid-containing component switches to the first state; The cleaning water outlet sprays cleaning water onto the wafer, and the wafer clamp drives the wafer to rotate about the axis so that the cleaning water sprayed onto the wafer from the cleaning water outlet falls onto the liquid holding member; The cleaning water outlet stops spraying cleaning water; The wafer fixture is reset, and the liquid-containing component is switched to the second state.

10. The wafer cleaning method as described in claim 9, characterized in that, The step of spraying cleaning water onto the wafer from the cleaning water outlet, and driving the wafer chuck to rotate the wafer about an axial direction so that the cleaning water sprayed onto the wafer from the cleaning water outlet falls onto the liquid-holding member includes: The cleaning water outlet sprays cleaning water onto the wafer, and the wafer jig drives the wafer to rotate at a low speed around the axis so that the cleaning water sprayed onto the wafer from the cleaning water outlet falls onto the liquid holding member; The cleaning water outlet stops spraying cleaning water onto the wafer, and the wafer jig drives the wafer to rotate at high speed around the axis so that the residual cleaning water on the wafer falls onto the liquid holding component.

Images