An immersion arf photoresist composition
By optimizing the combination of resin component I and resin component II to form a hydrophobic layer, the complexity of the immersion ArF photoresist process and the photoresist cleaning performance problem were solved, achieving efficient photolithographic pattern formation and protection of the photolithography machine lens.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SUZHOU RAINBOW MATERIALS CO LTD
- Filing Date
- 2026-04-30
- Publication Date
- 2026-06-02
AI Technical Summary
Existing immersion ArF photoresists suffer from complex processes, high difficulty in supporting processes, poor compatibility between photoresist and topcoat, and insufficient light transmittance. Furthermore, fluorinated resins have poor cleaning performance after development, affecting the edge roughness of the lithographic pattern and contaminating the lithography machine lens.
A specific ratio of resin component I and resin component II is used. Resin component I is composed of a copolymer formed from methacrylate monomers and a homopolymer of fluorinated methacrylate. A hydrophobic layer is formed by baking. The molecular weight and ratio of resin component II are optimized to ensure good compatibility and cleanability. Photoacid generators and organic solvents are used to simplify the process.
This technology enables the photoresist to self-layer during the baking process, forming a dense hydrophobic layer that prevents water from damaging the underlying photoresist, reduces photoacid leaching, improves the edge smoothness of the photolithographic pattern and production efficiency, and simplifies the process flow.
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Figure CN122131545A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of photoresist technology, and more specifically to an immersion ArF photoresist composition. Background Technology
[0002] Photolithography is a technique that uses photoresist (also known as photocoating) to transfer patterns from a photomask onto a substrate. With the development of technology, photolithography wavelengths have gradually evolved from G-line (436nm), I-line (365nm), to KrF (248nm), ArF (193nm), and extreme ultraviolet (EUV) wavelengths (13.5nm). Among these, ArF is generally used in 130nm-14nm photolithography processes and is currently the most advanced process and research frontier in photolithography technology in China.
[0003] ArF lithography technology is mainly divided into immersion lithography and dry lithography. Dry lithography is performed in air, while immersion lithography is generally performed in ultrapure water. Since the refractive index of water (refractive index ≈ 1.44) is greater than that of air (refractive index ≈ 1.0), the equivalent wavelength can be reduced to 134nm, significantly improving the numerical aperture (NA) and increasing the resolution by 17% compared to dry lithography. However, water may cause the photoresist to expand or develop defects. Therefore, a topcoat coating is usually spin-coated onto the photoresist to form a physical barrier to reduce water penetration and to prevent photoacids from seeping out of the photoresist (into the water), thus avoiding contamination of the lithography machine lens.
[0004] The above schemes are the most commonly used process schemes at present, but they have problems such as complex processes, high difficulty in supporting processes, and poor matching degree between photoresist and topcoat. Therefore, the research direction is to prepare an immersion ArF photoresist composition that has both photoresist components and can spontaneously form a hydrophobic protective layer on the surface during baking.
[0005] CN119798525A (Resin for Immersion Photoresist, Preparation Method and Immersion Photoresist) mentions that, based on acrylate prepolymers, fluorine-containing monomers are introduced in the later stage of the reaction to generate a resin for immersion photoresist that is a composite of fluorine-containing resin and host resin. Although this resin can achieve self-delamination during baking, because the fluorine-containing resin and the host resin are on the same molecular chain, the unexposed parts cannot be cleaned after development, affecting the line edge roughness (LER) of the underlying photoresist. CN117683157A (Fluorine-containing Resin and Immersion Photoresist) mentions using a mixture of fluorine-containing resin and acrylate resin to prepare immersion photoresist, but its fluorine-containing resin contains benzene rings, which have a significant absorption effect on the 193nm wavelength, seriously affecting light transmittance and requiring a larger exposure. In addition, the molecular weight of this fluorine-containing resin is 20,000-30,000, which is relatively large, resulting in poor cleaning performance.
[0006] Therefore, there is an urgent need in this field for a novel photoresist to solve the above problems. Summary of the Invention
[0007] The first objective of this invention is to address the shortcomings of the prior art by providing an ArF photoresist composition.
[0008] To achieve the above objectives, the technical solution adopted by the present invention is: an immersion ArF photoresist composition, wherein the photoresist composition comprises ArF photoresist resin, a photoacid generator, and an organic solvent, wherein the ArF photoresist resin is composed of resin component I and resin component II, and the mass ratio of resin component I to resin component II is (2-10):1, and the structural formula of resin component I is as follows: , In the formula, w:x:y = (20-30):(50-60):(10-30), the weight-average molecular weight of resin component I is between 3000-15000 Da; the molecular weight distribution coefficient is between 1.0-1.5; Resin component II is a homopolymer formed by free radical polymerization of fluorinated methacrylate monomers, and the structural formula of the fluorinated methacrylate monomers is as follows: , Wherein, n=1 or 2; R is selected from any one of C1-C7 aliphatic alkyl, cycloalkyl or fluoroalkyl; the weight average molecular weight of resin component II is between 4000-13000 Da, and the molecular weight distribution coefficient is between 1.0 and 1.6.
[0009] Preferably, the weight-average molecular weight of resin component I is between 5000 and 10000 Da. More preferably, the weight-average molecular weight of resin component I is between 6853 and 9347 Da.
[0010] Preferably, the weight-average molecular weight of resin component II is between 5000 and 8000 Da. More preferably, the weight-average molecular weight of resin component II is between 6943 and 7416 Da.
[0011] Preferably, the mass ratio of resin component I to resin component II is (3-8):1.
[0012] In one specific implementation, the photoacid-generating agent is selected from either iodonium salts or thionium salts.
[0013] In one specific embodiment, the organic solvent is selected from one or a mixture of two of propylene glycol methyl ether acetate, propylene glycol methyl ether, isobutyl isobutyrate, methyl 2-hydroxyisobutyrate, ethyl lactate, and methyl isobutyl methanol.
[0014] In one specific implementation, the photoacid-generating agent is 4-tert-butylphenyldiphenylsulfonylnonfluorobutane sulfonate.
[0015] In one specific embodiment, the organic solvent used is a mixture of propylene glycol methyl ether acetate and ethyl lactate.
[0016] The beneficial effects of this invention are: 1) The resin component I used in this invention is preferably a copolymer formed from methacrylate monomers. It has good compatibility with the fluorinated methacrylate homopolymer of resin component II and also has a certain surface energy difference. With the preferred ratio, it can achieve self-delamination during the baking process: the lower layer has good adhesion, cleaning and etching resistance, and can form a beautiful photolithography pattern after exposure; the surface layer forms a strong hydrophobic layer due to the enrichment of fluorinated monomers, which can effectively prevent water from damaging the lower photoresist layer, and at the same time has a high (static and dynamic) retreat angle, controlling the photoacid seepage in water to less than 0.05ppb, and significantly reducing the contamination of the photolithography lens by photoacid during exposure.
[0017] 2) In this invention, the molecular weight of resin component II is preferably 5000-8000, and the molecular weight distribution is selected from 1.0-1.6. This can avoid the problems of insufficient self-layering driving force and increased photoacid exudation value caused by too small a molecular weight, and also avoid the problems of post-development cleaning residue and deterioration of line edge roughness (LER) caused by too large a molecular weight. Thus, while ensuring the hydrophobic effect, a photolithographic pattern with smooth edges and low defect rate is obtained.
[0018] 3) The immersion ArF photoresist of the present invention has a simple process. The original process of spin coating photoresist, drying, spin coating topcoat and drying is simplified to spin coating photoresist and drying; this saves production time and improves production efficiency.
[0019] 4) When this immersion ArF photoresist is used, the baking process provides energy for molecular motion. Thermodynamically, the system tends to reduce the total surface energy to reach a stable state. Due to the difference in surface energy of the monomers in the resin, self-stratification can be achieved: the low surface energy fluorine-containing segments will spontaneously migrate and accumulate towards the air-coating interface to form a dense hydrophobic layer; the high surface energy photoresist main segments will be arranged towards the photoresist-substrate interface to ensure adhesion to the substrate and subsequent photolithography performance. The resin has good compatibility and a suitable molecular weight, which can ensure that each component plays its role and also ensure the cleaning performance after development. Attached Figure Description
[0020] To more clearly illustrate the technical solution of the present invention, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0021] Figure 1 The GPC spectrum of resin A1 obtained from resin component I in Example 1 is shown. Figure 2 The GPC spectrum of resin A4 obtained from resin component I in Example 4 is shown. Figure 3 The GPC spectrum of resin A5 obtained from resin component I in Comparative Example 1 is shown. Figure 4 The GPC spectrum of resin A6 obtained from resin component I in Comparative Example 2 is shown. Figure 5 The GPC spectrum of resin B1 obtained from resin component II in Example 1 is shown. Figure 6 The GPC spectrum of resin B5 obtained from resin component II in Example 5 is shown. Figure 7 The GPC spectrum of resin B6 obtained from resin component II in Comparative Example 1 is shown. Figure 8 The GPC spectrum of resin B7 obtained from resin component II in Comparative Example 2 is shown. Figure 9 The photolithographic pattern of photoresist C1 obtained in photoresist formulation example 1; Figure 10 The photolithographic pattern of photoresist D3 obtained in Comparative Example 3 is shown. Figure 11 The photolithographic pattern of photoresist D6 obtained in Comparative Example 6 is shown. Detailed Implementation
[0022] The technical solution of the present invention will be clearly and completely described below with reference to specific embodiments. Obviously, the described embodiments are only a part of the embodiments of the present invention, and all embodiments are not included. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0023] This invention provides an immersion ArF photoresist composition, comprising ArF photoresist resin, a photoacid generator, and an organic solvent. The ArF photoresist resin is composed of resin component I and resin component II, with a mass ratio of resin component I to resin component II of (2-10):1. The structural formula of resin component I is as follows: , In the formula, w:x:y = (20-30):(50-60):(10-30), the weight-average molecular weight of resin component I is between 3000-15000 Da; the molecular weight distribution coefficient is between 1.0-1.5; Resin component II is a homopolymer formed by free radical polymerization of fluorinated methacrylate monomers, and the structural formula of the fluorinated methacrylate monomers is as follows: , Wherein, n=1 or 2; R is selected from any one of C1-C7 aliphatic alkyl, cycloalkyl or fluoroalkyl; the weight average molecular weight of resin component II is between 4000-13000 Da, and the molecular weight distribution coefficient is between 1.0 and 1.6.
[0024] Specifically, R can be any of the following groups: .
[0025] The photo-induced acid-producing agent is selected from any one of iodonium salts and thiodonium salts. The organic solvent is selected from one or a mixture of two of propylene glycol methyl ether acetate, propylene glycol methyl ether, isobutyl isobutyrate, methyl 2-hydroxyisobutyrate, ethyl lactate, and methyl isobutyl methanol.
[0026] Here, both resin component I and resin component II are synthesized using free radical polymerization in an organic solvent environment. A common synthesis process is provided below: I. Synthesis of Resin Component I Example 1 of the synthesis of resin component I In a 1000ml four-necked flask, 80g of propylene glycol methyl ether was added, and anhydrous nitrogen was purged into the liquid to remove oxygen. The temperature was raised to 95℃. 50g of glyceryl methacrylate, 154g of 2-carboxy-4-norborneol-5-acetoxymethacrylate, 28g of n-butyl methacrylate, 12g of tert-amyl peroxide-2-ethylhexanoate, and 250g of propylene glycol methyl ether were weighed out and stirred thoroughly. The mixture was then added dropwise to the four-necked flask over 2 hours at 95℃, and the temperature was maintained at 95℃ for 8 hours. After the reaction was complete, the mixture was cooled to room temperature and precipitated in methanol. After vacuum drying, resin A1 was obtained. Mw=6853, PDI=1.45 were determined using gel permeation chromatography. The GPC chromatogram of resin A1 is shown below. Figure 1 As shown.
[0027] Example 2 of the synthesis of resin component I The difference between this example and Synthesis Example 1 is that the amount of tert-amyl peroxide-2-ethylhexanoate added was adjusted from 12g to 10g, resulting in resin A2. Mw was determined to be 9347 and PDI to be 1.41 using gel permeation chromatography.
[0028] Example 3 of the synthesis of resin component I The difference between this example and Synthesis Example 1 is that the amount of tert-amyl peroxide-2-ethylhexanoate added was adjusted from 12g to 7g, resulting in resin A3. Mw was determined to be 14338 and PDI to be 1.42 using gel permeation chromatography.
[0029] Synthesis Example 4 of Resin Component I The difference between this example and Synthesis Example 1 is that the amount of tert-amyl peroxide-2-ethylhexanoate added was adjusted from 12g to 18g, yielding resin A4. Gel chromatography was used to determine Mw=3312, PDI=1.42. The GPC chromatogram of resin A4 is shown below. Figure 2 As shown.
[0030] Comparative Example 1: Synthesis of Resin Component I Based on Synthesis Example 1, the amount of tert-amyl peroxide-2-ethylhexanoate was changed from 12g to 6g, and the reaction temperature was changed from 95℃ to 85℃, yielding resin A5. Mw=17079 and PDI=1.51 were determined using gel permeation chromatography. The GPC chromatogram of resin A5 is shown below. Figure 3 As shown.
[0031] Comparative Example 2: Synthesis of Resin Component I Based on Synthesis Example 1, the amount of tert-amyl peroxide-2-ethylhexanoate was changed from 12 g to 18 g, and the reaction temperature was changed from 95 °C to 105 °C, yielding resin A6. Gel chromatography was used to determine Mw = 2775 and PDI = 1.54. The GPC chromatogram of resin A6 is shown below. Figure 4 As shown.
[0032] Example 1 of the synthesis of resin component II In a 500ml four-necked flask, 50g of propylene glycol methyl ether acetate was added, and anhydrous nitrogen was purged into the liquid to remove oxygen. The temperature was raised to 100℃. 100g of 2,2,4,4,4-pentafluoro-3-hydroxy-1,3-bis(trifluoromethyl)butyl methacrylate, 6g of dimethyl azobisisobutyrate, and 120g of propylene glycol methyl ether acetate were weighed out, stirred thoroughly, and added dropwise to the four-necked flask at 100℃ for 2 hours. The mixture was kept at this temperature for 8 hours. After the reaction was complete, the precipitate was added to n-pentane and dried under vacuum to obtain resin B1. Mw=6943, PDI=1.50 were determined by gel permeation chromatography. The GPC chromatogram of resin B1 is shown below. Figure 5 As shown.
[0033] Example 2 of the synthesis of resin component II Based on the synthesis example 1 of resin component II, 5,5,5-trifluoro-4-hydroxy-(trifluoromethyl)pentane-2-ylmethacrylate was used as the fluorinated monomer to obtain resin B2. Mw = 7416 and PDI = 1.49 were determined by gel permeation chromatography.
[0034] Synthesis Example 3 of Resin Component II Based on the synthesis example 1 of resin component II, 2,5-Bis(1,1,1,3,3,3,3-hexafluoro-2-hydroxypropane-2-yl)cyclohexyl methacrylate was used as the fluorinated monomer to obtain resin B3. Mw = 7741 and PDI = 1.36 were determined by gel permeation chromatography.
[0035] Synthesis Example 4 of Resin Component II Based on the synthesis example 1 of resin component II, the amount of dimethyl azobisisobutyrate was changed from 6g to 3g to obtain resin B4. Mw was determined to be 12496 and PDI to be 1.38 using gel permeation chromatography.
[0036] Synthesis Example 5 of Resin Component II Based on the synthesis example 1 of resin component II, the amount of dimethyl azobisisobutyrate was changed from 6g to 9g to obtain resin B5. Mw=4647, PDI=1.45 were determined by gel permeation chromatography. The GPC chromatogram of resin B5 is shown below. Figure 6 As shown.
[0037] Comparative Example 1: Synthesis of Resin Component II Based on the synthesis example 1 of resin component II, the amount of dimethyl azobisisobutyrate was changed from 6g to 2g to obtain resin B6. The GPC chromatogram of resin B6 was determined by gel permeation chromatography (GPC) to be Mw=15097 and PDI=1.63. (See attached image). Figure 7 As shown.
[0038] Comparative Example 2: Synthesis of Resin Component II Based on the synthesis example 1 of resin component II, the amount of dimethyl azobisisobutyrate was changed from 6g to 12g to obtain resin B7. The GPC chromatogram of resin B7 was determined by gel permeation chromatography (GPC) to be Mw=3188 and PDI=1.56. (See attached GPC chromatogram). Figure 8 As shown.
[0039] The following describes the preparation of the photoresist. In the photoresist preparation process, 4-tert-butylphenyl diphenylsulfonyl nonafluorobutane sulfonate was used as the photoacid generator; propylene glycol methyl ether acetate / ethyl lactate = 95 / 5 (wt%) was used as the organic solvent.
[0040] Photoresist Formulation Examples 1-4 Take four 200ml beakers and add 3.95g of resin component I (A1, A2, A3, A4), 0.65g of resin component II (B1), 0.1g of 4-tert-butylphenyl diphenyl thione fluorobutane sulfonate, 90.5g of propylene glycol methyl ether acetate, and 4.8g of ethyl lactate to each beaker. Stir and mix for 1 hour, then filter using a 2μm organic filter to obtain photoresist C1, C2, C3, and C4.
[0041] Photoresist Formulation Examples 5-8 Take four 200ml beakers and add 3.95g of resin component I (A1), 0.65g of resin component II (B2, B3, B4, B5), 0.1g of 4-tert-butylphenyl diphenyl thione fluorobutane sulfonate, 90.5g of propylene glycol methyl ether acetate, and 4.8g of ethyl lactate to each beaker. Stir and mix for 1 hour, then filter using a 2μm organic filter to obtain photoresists C5, C6, C7, and C8.
[0042] Photoresist Formulation Example 9 Take a 200ml beaker and add 4.06g of resin component I (A1), 0.54g of resin component II (B1), 0.1g of 4-tert-butylphenyl diphenyl thione fluorobutane sulfonate, 90.5g of propylene glycol methyl ether acetate, and 4.8g of ethyl lactate. Stir and mix for 1 hour, and then filter using a 2μm organic filter to obtain photoresist C9.
[0043] Photoresist Formulation Example 10 Take a 200ml beaker and add 3.55g of resin component I (A1), 1.05g of resin component II (B1), 0.1g of 4-tert-butylphenyl diphenyl thione fluorobutane sulfonate, 90.5g of propylene glycol methyl ether acetate, and 4.8g of ethyl lactate. Stir and mix for 1 hour, and then filter using a 2μm organic filter to obtain photoresist C10.
[0044] Comparative Example 1-2 of Photoresist Formulation Take two 200ml beakers and add 3.95g of resin component I (A5, A6), 0.65g of resin component II (B1), 0.1g of 4-tert-butylphenyl diphenyl thione fluorobutane sulfonate, 90.5g of propylene glycol methyl ether acetate, and 4.8g of ethyl lactate to each beaker. Stir and mix for 1 hour, then filter using a 2μm organic filter to obtain photoresists D1 and D2.
[0045] Comparative ratio of photoresist formulation 3-4 Take two 200ml beakers and add 3.95g of resin component I (A1), 0.65g of resin component II (B6, B7), 0.1g of 4-tert-butylphenyl diphenyl thione fluorobutane sulfonate, 90.5g of propylene glycol methyl ether acetate, and 4.8g of ethyl lactate to each beaker. Stir and mix for 1 hour, then filter using a 2μm organic filter to obtain photoresists D3 and D4.
[0046] Comparative Example 5 of Photoresist Formulation Take a 200ml beaker and add 4.25g of resin component I (A1), 0.35g of resin component II (B1), 0.1g of 4-tert-butylphenyl diphenyl thione fluorobutane sulfonate, 90.5g of propylene glycol methyl ether acetate, and 4.8g of ethyl lactate. Stir and mix for 1 hour, and then filter using a 2μm organic filter to obtain photoresist D5.
[0047] Comparative Example 6 of Photoresist Formulation Take a 200ml beaker and add 2.70g of resin component I (A1), 1.90g of resin component II (B1), 0.1g of 4-tert-butylphenyl diphenyl thione fluorobutane sulfonate, 90.5g of propylene glycol methyl ether acetate, and 4.8g of ethyl lactate. Stir and mix for 1 hour, and then filter using a 2μm organic filter to obtain photoresist D6.
[0048] The performance of the above-obtained immersion ArF photoresist was tested: The above-mentioned immersion ArF photoresist was spin-coated onto 6-inch silicon wafers and baked at 90°C for 60 seconds on a hot plate. After cooling, its static contact angle, dynamic contact angle, and the leaching of the photoacid-generating agent in water were measured. The testing instruments are as follows: (1) n value, k value: Ellipsometry (brand / model: Woollam / RC2, USA); (2) Static contact angle and dynamic contact angle: Contact angle measuring instrument (brand / model: German Klü / DSA25S); (3) Leakage of photoacid-producing agent in water: HPLC-MS (brand / model: Agilent 1260 / 6420).
[0049] The test results are shown in Table 1.
[0050] Table 1
[0051] Furthermore, the photolithography process conditions are as follows: First, an AR-40 bottom anti-reflective coating is spin-coated onto the rinsed silicon wafer to form a thin film with a thickness of 80 nm. This film is then baked at 205°C for 60 seconds. Next, C1-C10 and D1-D6 photoresists are spin-coated separately to form a thin film with a thickness of 220 nm. This film is then pre-baked at 110°C for 60 seconds and exposed using a 193nm ASML XT1980i immersion lithography machine (exposure energy 28-35 mJ / cm²). 2The photoresist pattern (with a linewidth of 55 nm, a pitch of 110 nm, NA=1.35, and Sigma=0.375 / 0.75) was baked at 110°C for 60 seconds, followed by development in 2.38 wt% tetramethylammonium hydroxide (TMAH) developer for 60 seconds. The pattern was then rinsed with ultrapure water at a flow rate of 5 ml / min at 800 rpm for 5 seconds, followed by spinning at 1500 rpm for 3 seconds and drying at 110°C for 60 seconds to form the photoresist pattern.
[0052] As shown in Table 1, the immersion-type ArF photoresist of this invention can effectively achieve resin self-layering during application. From the contact angle and photoacid leaching value data, it can be seen that the photoresist surfaces obtained in Examples 1-10 all exhibit excellent hydrophobic properties, effectively preventing water from damaging the underlying photoresist layer. Simultaneously, the photoacid leaching value is <0.05ppb, effectively preventing photoacid from mixing into the water and significantly reducing contamination of the lithography machine lens. From the photolithography pattern of Example 1... Figure 9 As can be seen, the photolithographic pattern is clear and the edges are highly regular.
[0053] The comparison of Examples 1 and 2 and Comparative Examples 1-4 shows that when resin component II uses B1, and the molecular weight of resin component I is too large (as in Comparative Example 1), its cleaning performance deteriorates significantly, and its compatibility with resin component II also deteriorates. When the molecular weight of resin component I is too small (as in Comparative Example 2), both its cleaning performance and etching resistance deteriorate significantly. Resin components I with excessively large or small molecular weights cannot provide fine photolithographic patterns. When resin component I uses A1 and is used in combination with resin component II, whose molecular weight is higher than the scope of the invention (as in Comparative Example 3), the cleaning performance is even worse, resulting in a decrease in the clarity of the photoresist pattern. See [link to relevant documentation]. Figure 10 As shown; when used in combination with resin component II whose molecular weight is lower than the scope of the invention, such as in Comparative Example 4, the photoacid exudation value deteriorates and the overall performance is poor.
[0054] The data from Examples 1, 8, 9 and Comparative Examples 5, 6 show that when the proportion of resin component II is too low, as in Comparative Example 5, the contact angle of the photoresist is too small, and the fluorinated resin cannot form a dense hydrophobic layer, resulting in severe photoacid leaching. When the proportion of resin component II is too high, as in Comparative Example 6, the compatibility between the two resins deteriorates significantly, and the photolithographic pattern in Comparative Example 6, for example... Figure 11 As can be seen, an excessively high proportion of resin component II will lead to poorer cleanability of the underlying photoresist and affect the line edge roughness of the photoresist.
[0055] The present invention has been described in detail above with reference to specific embodiments and exemplary examples; however, these descriptions should not be construed as limiting the present invention. Those skilled in the art will understand that various equivalent substitutions, modifications, or improvements can be made to the technical solutions and embodiments of the present invention without departing from the spirit and scope of the invention, and all such modifications and improvements fall within the scope of the present invention. The scope of protection of the present invention is defined by the appended claims.
Claims
1. An immersion ArF photoresist composition, characterized in that, The photoresist composition includes ArF photoresist resin, a photoacid generator, and an organic solvent. The ArF photoresist resin is composed of resin component I and resin component II, with a mass ratio of resin component I to resin component II of (2-10):
1. The structural formula of resin component I is as follows: ， In the formula, w:x:y = (20-30):(50-60):(10-30), the weight-average molecular weight of resin component I is between 3000-15000 Da; the molecular weight distribution coefficient is between 1.0-1.5; Resin component II is a homopolymer formed by free radical polymerization of fluorinated methacrylate monomers, and the structural formula of the fluorinated methacrylate monomers is as follows: ， Wherein, n=1 or 2; R is selected from any one of C1-C7 aliphatic alkyl, cycloalkyl or fluoroalkyl; the weight average molecular weight of resin component II is between 4000-13000 Da, and the molecular weight distribution coefficient is between 1.0 and 1.
6.
2. The immersion ArF photoresist composition according to claim 1, characterized in that, The weight-average molecular weight of resin component I is between 5000 and 10000 Da.
3. The immersion ArF photoresist composition according to claim 1, characterized in that, The weight-average molecular weight of resin component II is between 5000 and 8000 Da.
4. The immersion ArF photoresist composition according to claim 1, characterized in that, The mass ratio of resin component I to resin component II is (3-8):
1.
5. The immersion ArF photoresist composition according to claim 1, characterized in that, The photo-induced acid-producing agent is selected from either iodonium salt or thiodonium salt.
6. The immersion ArF photoresist composition according to claim 1, characterized in that, The organic solvent is selected from one or a mixture of two of propylene glycol methyl ether acetate, propylene glycol methyl ether, isobutyl isobutyrate, methyl 2-hydroxyisobutyrate, ethyl lactate, and methyl isobutyl methanol.
7. The immersion ArF photoresist composition according to claim 5, characterized in that, The photo-induced acid-producing agent used is 4-tert-butylphenyldiphenylsulfonyl nonafluorobutane sulfonate.
8. The immersion ArF photoresist composition according to claim 6, characterized in that, The organic solvent used is a mixture of propylene glycol methyl ether acetate and ethyl lactate.