Photoresist stripping liquid composition, method for preparing the same, and use thereof

Abstract

The present application belongs to the technical field of photoresist, and particularly relates to a photoresist stripping liquid composition, a preparation method thereof and application. The photoresist stripping liquid composition, with the sum of mass percentages being 100%, comprises the following components: 10%-20% of an organic alcohol amine, 30%-60% of an organic solvent, 0.5%-2% of an indole compound, 0.1%-1% of an imidazoline compound, 0.01%-0.1% of an anionic surfactant, and the balance of water; the indole compound and the imidazoline compound have synergistic effects, so that the organic alcohol amine and the organic solvent can still maintain an effective active concentration in a long-term use process, and the stripping capacity caused by component loss can be avoided, and the photoresist stripping liquid composition has a good application prospect in the manufacturing process of display panels.

Description

Technical Field

[0001] This invention belongs to the field of photoresist technology, specifically relating to photoresist stripping solution compositions, their preparation methods, and applications. Background Technology

[0002] Photoresist, as the core material in photolithography, is mainly composed of photosensitive resin, sensitizer, and solvent. Through a series of processes including exposure, development, and etching, it transfers fine patterns from a photomask to a sample, a crucial step in the manufacturing of precision electronic components such as semiconductor chips and flat panel displays. After pattern transfer, a photoresist stripping solution must be used to thoroughly remove residual photoresist and curing byproducts from the sample surface, ensuring that sensitive structures such as the underlying metal layer and dielectric materials are not damaged. Its performance directly affects the device yield and long-term reliability.

[0003] Photoresist stripping solutions have evolved into various systems, among which organic solvent-based stripping solutions still dominate the market due to their strong dissolving power and fast stripping speed. These solutions typically use amide compounds such as N-methylformamide as the core solvent, combined with alcohol ether solvents such as diethylene glycol butyl ether and diethylene glycol methyl ether to form a mixed system. However, these traditional stripping solutions have significant drawbacks: N-methylformamide, as a key component, has poor chemical stability and is prone to hydrolysis in the alkaline environment common in photolithography processes. Furthermore, its alkaline hydrolysis rate is significantly higher than that of similar solvents such as N,N-dimethylformamide, leading to a decrease in the effective component content of the stripping solution and a rapid decline in stripping ability over time. This directly shortens the lifespan of the stripping solution and increases the frequency and cost of solution replacement during production.

[0004] Currently, CN120559969A discloses a photoresist stripping solution composition. By adding an amide solvent and controlling its Hansen solubility parameter δ to be close to the photoresist solubility parameter, the photoresist stripping solution composition's ability to dissolve photoresist is maximized. At the same time, the use of a mixture of monohydroxy alcohol ether solvents and dihydroxy alcohol ether solvents improves the water washing effect of the photoresist stripping solution composition. Furthermore, by controlling the octanol / water partition coefficient of the mixed solvent formed by the monohydroxy alcohol ether solvent, dihydroxy alcohol ether solvent, and amide solvent, the photoresist stripping solution composition can have both good photoresist dissolving ability and water washing performance. This formula mainly improves the stripping effect of the stripping solution, but it still has shortcomings in extending the service life of the stripping solution.

[0005] Based on the above statements, the present invention provides a photoresist stripping solution composition, its preparation method, and its application. Summary of the Invention

[0006] To address the above problems, the present invention provides a photoresist stripping solution composition, its preparation method, and its application.

[0007] In a first aspect, the present invention provides a photoresist stripping solution composition, which adopts the following technical solution: The photoresist stripping solution composition, based on a total mass percentage of 100%, comprises the following: 10%-20% organic alcohol amines, 30%-60% organic solvents, 0.5%-2% indole compounds, 0.1%-1% imidazoline compounds, 0.01%-0.1% anionic surfactants, with the balance being water.

[0008] Preferably, the structural formula of the indole compound is shown in formula (1): Equation (1); In formula (1), R1 is hydrogen or C1-C5 alkyl, and n is any integer between 0 and 5.

[0009] Preferably, the indole compound includes at least one selected from 3-indolecarboxylic acid, 3-indoleacetic acid, 3-indolepropionic acid, 3-indolebutyric acid, 3-indolevaleric acid, 3-indolehexanoic acid, 5-methylindole-3-acetic acid, 5-ethylindole-3-acetic acid, 5-propylindole-3-acetic acid, 5-butylindole-3-acetic acid, and 1-hexylindole-3-carboxylic acid.

[0010] Preferably, the structural formula of the imidazoline compound is shown in formula (2) below: Equation (2), In equation (2), R 21 It is hydrogen, C1-C5 alkyl, C1-C5 alkenyl, C1-C5 hydroxyalkyl, or C1-C5 aralkyl; R 22 It is a C1-C20 alkyl or C1-C20 alkenyl; R 23 and R 24 It is hydrogen, C1-C5 alkyl or C1-C5 alkenyl.

[0011] Preferably, the imidazoline compound includes at least one of 2-methylimidazoline, 2-ethylimidazoline, 1-methyl-2-heptadecylimidazoline, 1-benzyl-2-methyl-2-imidazoline, oleyl hydroxyethylimidazoline, cocoyl hydroxyethylimidazoline, lauryl hydroxyethylimidazoline, stearyl hydroxyethylimidazoline, isostearyl hydroxyethylimidazoline, and 2-undecylimidazoline.

[0012] Preferably, the organic alcohol amine includes at least one of ethanolamine, diethanolamine, triethanolamine, monoisopropanolamine, diisopropanolamine, 3-amino-1-propanol, N-methylethanolamine, N-ethylethanolamine, N-propylethanolamine, N,N-dimethylethanolamine, N,N-diethylethanolamine, diethylene glycolamine, and triethylene glycolamine.

[0013] Preferably, the organic solvent includes at least one of C1-C5 alcohols, acetonitrile, toluene, xylene, diethyl ether, tert-butyl methyl ether, tetrahydrofuran, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol dimethyl ether, N,N-dimethylformamide, N,N-dimethylacetamide, dimethyl sulfoxide, and N-methylpyrrolidone.

[0014] Preferably, the anionic surfactant comprises a benzenesulfonate having a C10-C18 long-chain alkyl group.

[0015] Secondly, the present invention provides a method for preparing a photoresist stripping solution composition, employing the following technical solution: A method for preparing a photoresist stripping solution composition includes the following steps: Step (1) involves mixing an indole compound, an imidazoline compound, and an organic solvent to obtain a mixture; Step (2) Add organic alcohol amine, anionic surfactant and mixture to water to obtain photoresist stripping solution composition.

[0016] Preferably, in step (1), the mixing is carried out under stirring, the stirring speed is 100-300 r / min, and the stirring time is 30-120 min.

[0017] Preferably, in step (2), the mixing is carried out under stirring, the stirring speed is 100-300 r / min, and the stirring time is 10-30 min.

[0018] Thirdly, the present invention provides the application of the photoresist stripping liquid composition described above or the photoresist stripping liquid composition prepared by the preparation method described above in a display panel. Beneficial effects

[0019] In this invention, the organic alcohol amines and organic solvents in the photoresist stripping solution composition are prone to rapid failure during photoresist stripping due to photoresist dissolution, oxidation, and acid / alkali consumption. Indole and imidazoline compounds, however, can inhibit the oxidative decomposition of the active ingredients, reducing the loss of alcohol amines and solvents. The indole and imidazoline compounds exhibit synergistic effects: the aromatic ring structure of indole compounds can inhibit the oxidative degradation reaction of alcohol amines, reducing the loss of amino groups; the heterocyclic structure of imidazoline compounds can form hydrogen bonds with alcohol amines, stabilizing their chemical structure, reducing the rate of neutralization reactions, and simultaneously improving the dispersion stability of the organic solvent in the aqueous phase, reducing the risk of solvent evaporation and stratification. This allows the organic alcohol amines and organic solvents to maintain effective active concentrations during long-term use, avoiding a decrease in stripping ability due to component loss. Furthermore, indole and imidazoline compounds have corrosion-inhibiting functions, can complex metal ion impurities, and prevent them from catalyzing the decomposition of active ingredients or initiating precipitation reactions.

[0020] In addition, the anionic surfactant stabilizes the system, reducing the impact of photoresist residue on the activity of the stripping solution. This allows the stripping solution to maintain high stripping activity and low corrosion characteristics for a long time under continuous use or high-temperature process conditions. It is not easy to age or fail, which greatly extends the replacement cycle and service life, reduces production costs and waste discharge, and improves production efficiency. Attached Figure Description

[0021] The invention will now be further described with reference to the accompanying drawings.

[0022] Figure 1 The image shows a planar OM (Optical Object Model) of the sample after being stripped with the photoresist stripping solution prepared in Example 1.

[0023] Figure 2 The image shows the planar OM diagram of the sample after being stripped with the photoresist stripping solution prepared in Comparative Example 6. Detailed Implementation

[0024] The technical solutions of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0025] In a first aspect, the present invention provides a photoresist stripping solution composition, which adopts the following technical solution: The photoresist stripping solution composition, based on a total mass percentage of 100%, comprises the following: 10%-20% organic alcohol amines, 30%-60% organic solvents, 0.5%-2% indole compounds, 0.1%-1% imidazoline compounds, 0.01%-0.1% anionic surfactants, with the balance being water.

[0026] In some embodiments of the present invention, based on the total weight of the above-described photoresist stripping solution composition, the organic alcohol amine content can be, for example, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, or 20%, or any value within the range of 10%-20%; the organic solvent content can be, for example, 30%, 35%, 40%, 45%, 50%, 55%, or 60%, or any value within the range of 30%-60%; the indole compound content can be, for example, 0.5%, 0.8%, 1%, 1.2%, 1.5%, 1.8%, or 2%, or 0.5%. The content of the imidazoline compound can be any value within the range of %-2%; the content of the imidazoline compound can be, for example, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9% or 1%, or any value within the range of 0.1%-1%; the content of the anionic surfactant can be, for example, 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.06%, 0.07%, 0.08%, 0.09% or 0.1%, or any value within the range of 0.01%-0.1%; the remainder is water to ensure that the total mass percentage of the composition is 100%.

[0027] In some embodiments of the present invention, the structural formula of the indole compound is shown in formula (1) below: Equation (1); In formula (1), R1 is hydrogen or C1-C5 alkyl, and n is any integer between 0 and 5.

[0028] In some instances, the aforementioned indole compounds are not particularly limited, but specifically may include at least one of 3-indolecarboxylic acid, 3-indoleacetic acid, 3-indolepropionic acid, 3-indolebutyric acid, 3-indolevaleric acid, 3-indolehexanoic acid, 5-methylindole-3-acetic acid, 5-ethylindole-3-acetic acid, 5-propylindole-3-acetic acid, 5-butylindole-3-acetic acid, and 1-hexylindole-3-carboxylic acid.

[0029] In some embodiments of the present invention, the structural formula of the imidazoline compound is shown in formula (2) below: Equation (2); In equation (2), R 21 It is hydrogen, C1-C5 alkyl, C1-C5 alkenyl, C1-C5 hydroxyalkyl, or C1-C5 aralkyl; R 22 It is a C1-C20 alkyl or C1-C20 alkenyl; R 23 and R 24 It is hydrogen, C1-C5 alkyl or C1-C5 alkenyl.

[0030] In some instances, the imidazoline compounds described above are not particularly limited, but specifically, they may include at least one of 2-methylimidazoline, 2-ethylimidazoline, 1-methyl-2-heptadecylimidazoline, 1-benzyl-2-methyl-2-imidazoline, oleyl hydroxyethylimidazoline, cocoyl hydroxyethylimidazoline, lauryl hydroxyethylimidazoline, stearyl hydroxyethylimidazoline, isostearyl hydroxyethylimidazoline, and 2-undecylimidazoline.

[0031] In some instances, the aforementioned organic alcohol amines are not particularly limited, but specifically, they may include at least one of ethanolamine, diethanolamine, triethanolamine, monoisopropanolamine, diisopropanolamine, 3-amino-1-propanol, N-methylethanolamine, N-ethylethanolamine, N-propylethanolamine, N,N-dimethylethanolamine, N,N-diethylethanolamine, diethylene glycolamine, and triethylene glycolamine.

[0032] In some instances, the aforementioned organic solvents are not particularly limited, but specifically, they may include at least one of C1-C5 alcohols, acetonitrile, toluene, xylene, diethyl ether, tert-butyl methyl ether, tetrahydrofuran, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol dimethyl ether, N,N-dimethylformamide, N,N-dimethylacetamide, dimethyl sulfoxide, and N-methylpyrrolidone.

[0033] In some instances, the aforementioned anionic surfactants are not particularly limited, but specifically, they may include benzenesulfonates having C10-C18 long-chain alkyl groups.

[0034] Secondly, the present invention provides a method for preparing a photoresist stripping solution composition, employing the following technical solution: A method for preparing a photoresist stripping solution composition includes the following steps: Step (1) involves mixing an indole compound, an imidazoline compound, and an organic solvent to obtain a mixture; Step (2) Add organic alcohol amine, anionic surfactant and mixture to water to obtain photoresist stripping solution composition.

[0035] In some instances, in step (1) above, the mixing is carried out under stirring. The stirring speed can be, for example, 100 r / min, 150 r / min, 200 r / min, 250 r / min, 300 r / min, or any value within the range of 100-300 r / min. The stirring time can be, for example, 30 min, 40 min, 50 min, 60 min, 70 min, 80 min, 90 min, 100 min, 110 min, 120 min, or any value within the range of 30-120 min.

[0036] In some instances, in step (2) above, the mixing is carried out under stirring. The stirring speed can be, for example, 100 r / min, 150 r / min, 200 r / min, 250 r / min, 300 r / min, or any value in the range of 100-300 r / min; the stirring time can be, for example, 10 min, 15 min, 20 min, 25 min, 30 min, or any value in the range of 10-30 min.

[0037] Thirdly, the present invention provides the application of the photoresist stripping liquid composition described above or the photoresist stripping liquid composition prepared by the preparation method described above in a display panel.

[0038] The features and performance of the present invention will be further described in detail below with reference to embodiments.

[0039] Examples 1-9 and Comparative Examples 1-6 provide photoresist stripping solution compositions and their preparation methods.

[0040] Example 1 The photoresist stripping solution composition, based on a total mass percentage of 100%, comprises the following: 10% organic alcohol amine, 60% organic solvent, 0.5% indole compound, 0.1% imidazoline compound, 0.01% anionic surfactant, and the balance being water. Among them, the organic alcohol amine is ethanolamine; the organic solvent is obtained by mixing ethylene glycol dimethyl ether and N,N-dimethylformamide in a mass ratio of 1:1; the indole compound is 3-indolecarboxylic acid; the imidazoline compound is cocoyl hydroxyethyl imidazoline; and the anionic surfactant is sodium dodecylbenzenesulfonate. A method for preparing a photoresist stripping solution composition includes the following steps: Step (1) Mix the indole compound, the imidazoline compound and the organic solvent, and stir at 300 r / min for 30 min to obtain a mixture; Step (2) Add organic alcohol amine, anionic surfactant and mixture to water and stir at 100 r / min for 30 min to obtain photoresist stripping solution composition.

[0041] Example 2 The photoresist stripping solution composition, based on a total mass percentage of 100%, comprises the following: 15% organic alcohol amine, 45% organic solvent, 1% indole compound, 0.4% imidazoline compound, 0.05% anionic surfactant, and the balance being water. The organic alcohol amine is N-methylethanolamine; the organic solvent is obtained by mixing tetrahydrofuran and N,N-dimethylacetamide in a mass ratio of 1:3; the indole compound is 3-indolevaleric acid; the imidazoline compound is obtained by mixing 2-methylimidazoline and cocoyl hydroxyethyl imidazoline in a mass ratio of 1:1; and the anionic surfactant is sodium octadecylbenzenesulfonate. A method for preparing a photoresist stripping solution composition includes the following steps: Step (1) Mix the indole compound, the imidazoline compound and the organic solvent, and stir at 200 r / min for 60 min to obtain a mixture; Step (2) Add organic alcohol amine, anionic surfactant and mixture to water and stir at 200 r / min for 20 min to obtain photoresist stripping solution composition.

[0042] Example 3 The photoresist stripping solution composition, based on a total mass percentage of 100%, comprises the following: 20% organic alcohol amine, 30% organic solvent, 2% indole compound, 1% imidazoline compound, 0.1% anionic surfactant, and the balance being water. The organic alcohol amine is N,N-dimethylethanolamine; the organic solvent is obtained by mixing diethylene glycol dimethyl ether and N,N-dimethylformamide in a mass ratio of 2:1; the indole compound is obtained by mixing 3-indolecarboxylic acid and 5-propylindole-3-acetic acid in a mass ratio of 2:1; the imidazoline compound is lauryl hydroxyethyl imidazoline; and the anionic surfactant is sodium undecylbenzenesulfonate. A method for preparing a photoresist stripping solution composition includes the following steps: Step (1) Mix the indole compound, the imidazoline compound and the organic solvent, and stir at 100 r / min for 120 min to obtain a mixture; Step (2) Add organic alcohol amine, anionic surfactant and mixture to water and stir at 300 r / min for 10 min to obtain photoresist stripping solution composition.

[0043] Example 4 The photoresist stripping solution composition, based on a total mass percentage of 100%, comprises the following: 10% organic alcohol amine, 60% organic solvent, 1.5% indole compound, 0.1% imidazoline compound, 0.01% anionic surfactant, and the balance being water. Among them, the organic alcohol amine is ethanolamine; the organic solvent is obtained by mixing ethylene glycol dimethyl ether and N,N-dimethylformamide in a mass ratio of 1:1; the indole compound is 3-indolecarboxylic acid; the imidazoline compound is cocoyl hydroxyethyl imidazoline; and the anionic surfactant is sodium dodecylbenzenesulfonate. A method for preparing a photoresist stripping solution composition includes the following steps: Step (1) Mix the indole compound, the imidazoline compound and the organic solvent, and stir at 300 r / min for 30 min to obtain a mixture; Step (2) Add organic alcohol amine, anionic surfactant and mixture to water and stir at 100 r / min for 30 min to obtain photoresist stripping solution composition.

[0044] Example 5 The photoresist stripping solution composition, based on a total mass percentage of 100%, comprises the following: 10% organic alcohol amine, 60% organic solvent, 2% indole compound, 0.1% imidazoline compound, 0.01% anionic surfactant, and the balance being water. Among them, the organic alcohol amine is ethanolamine; the organic solvent is obtained by mixing N-methylpyrrolidone and N,N-dimethylformamide in a mass ratio of 1:1; the indole compound is 3-indolecarboxylic acid; the imidazoline compound is cocoyl hydroxyethyl imidazoline; and the anionic surfactant is sodium dodecylbenzenesulfonate. A method for preparing a photoresist stripping solution composition includes the following steps: Step (1) Mix the indole compound, the imidazoline compound and the organic solvent, and stir at 300 r / min for 30 min to obtain a mixture; Step (2) Add organic alcohol amine, anionic surfactant and mixture to water and stir at 100 r / min for 30 min to obtain photoresist stripping solution composition.

[0045] Example 6 The photoresist stripping solution composition, based on a total mass percentage of 100%, comprises the following: 10% organic alcohol amine, 60% organic solvent, 0.5% indole compound, 0.1% imidazoline compound, 0.01% anionic surfactant, and the balance being water. The organic alcohol amine is ethanolamine; the organic solvent is obtained by mixing ethylene glycol dimethyl ether and N,N-dimethylformamide in a mass ratio of 1:1; the indole compound is obtained by mixing 3-indolecarboxylic acid and 5-methylindole-3-acetic acid in a mass ratio of 1:2; the imidazoline compound is cocoyl hydroxyethyl imidazoline; and the anionic surfactant is sodium dodecylbenzenesulfonate. A method for preparing a photoresist stripping solution composition includes the following steps: Step (1) Mix the indole compound, the imidazoline compound and the organic solvent, and stir at 300 r / min for 30 min to obtain a mixture; Step (2) Add organic alcohol amine, anionic surfactant and mixture to water and stir at 100 r / min for 30 min to obtain photoresist stripping solution composition.

[0046] Example 7 The photoresist stripping solution composition, based on a total mass percentage of 100%, comprises the following: 10% organic alcohol amine, 60% organic solvent, 0.5% indole compound, 0.6% imidazoline compound, 0.01% anionic surfactant, and the balance being water. Among them, the organic alcohol amine is ethanolamine; the organic solvent is obtained by mixing ethylene glycol dimethyl ether and N,N-dimethylformamide in a mass ratio of 1:1; the indole compound is 3-indolecarboxylic acid; the imidazoline compound is cocoyl hydroxyethyl imidazoline; and the anionic surfactant is sodium dodecylbenzenesulfonate. A method for preparing a photoresist stripping solution composition includes the following steps: Step (1) Mix the indole compound, the imidazoline compound and the organic solvent, and stir at 300 r / min for 30 min to obtain a mixture; Step (2) Add organic alcohol amine, anionic surfactant and mixture to water and stir at 100 r / min for 30 min to obtain photoresist stripping solution composition.

[0047] Example 8 The photoresist stripping solution composition, based on a total mass percentage of 100%, comprises the following: 10% organic alcohol amine, 60% organic solvent, 0.5% indole compound, 0.9% imidazoline compound, 0.01% anionic surfactant, and the balance being water. Among them, the organic alcohol amine is ethanolamine; the organic solvent is obtained by mixing ethylene glycol dimethyl ether and N,N-dimethylformamide in a mass ratio of 1:1; the indole compound is 3-indolecarboxylic acid; the imidazoline compound is cocoyl hydroxyethyl imidazoline; and the anionic surfactant is sodium dodecylbenzenesulfonate. A method for preparing a photoresist stripping solution composition includes the following steps: Step (1) Mix the indole compound, the imidazoline compound and the organic solvent, and stir at 300 r / min for 30 min to obtain a mixture; Step (2) Add organic alcohol amine, anionic surfactant and mixture to water and stir at 100 r / min for 30 min to obtain photoresist stripping solution composition.

[0048] Example 9 The photoresist stripping solution composition, based on a total mass percentage of 100%, comprises the following: 10% organic alcohol amine, 60% organic solvent, 0.5% indole compound, 0.1% imidazoline compound, 0.01% anionic surfactant, and the balance being water. Among them, the organic alcohol amine is ethanolamine; the organic solvent is obtained by mixing ethylene glycol dimethyl ether and N,N-dimethylformamide in a mass ratio of 1:1; the indole compound is 3-indolecarboxylic acid; the imidazoline compound is obtained by mixing 2-methylimidazoline and lauryl hydroxyethyl imidazoline in a mass ratio of 2:1; and the anionic surfactant is sodium dodecylbenzenesulfonate. A method for preparing a photoresist stripping solution composition includes the following steps: Step (1) Mix the indole compound, the imidazoline compound and the organic solvent, and stir at 300 r / min for 30 min to obtain a mixture; Step (2) Add organic alcohol amine, anionic surfactant and mixture to water and stir at 100 r / min for 30 min to obtain photoresist stripping solution composition.

[0049] Comparative Example 1 The photoresist stripping solution composition, based on a total mass percentage of 100%, comprises the following: 10% organic alcohol amine, 60% organic solvent, 0.1% indole compound, 0.1% imidazoline compound, 0.01% anionic surfactant, and the balance being water. Among them, the organic alcohol amine is ethanolamine; the organic solvent is obtained by mixing ethylene glycol dimethyl ether and N,N-dimethylformamide in a mass ratio of 1:1; the indole compound is 3-indolecarboxylic acid; the imidazoline compound is cocoyl hydroxyethyl imidazoline; and the anionic surfactant is sodium dodecylbenzenesulfonate. A method for preparing a photoresist stripping solution composition includes the following steps: Step (1) Mix the indole compound, the imidazoline compound and the organic solvent, and stir at 300 r / min for 30 min to obtain a mixture; Step (2) Add organic alcohol amine, anionic surfactant and mixture to water and stir at 100 r / min for 30 min to obtain photoresist stripping solution composition.

[0050] Comparative Example 2 The photoresist stripping solution composition, based on a total mass percentage of 100%, comprises the following: 10% organic alcohol amine, 60% organic solvent, 3% indole compound, 0.1% imidazoline compound, 0.01% anionic surfactant, and the balance being water. Among them, the organic alcohol amine is ethanolamine; the organic solvent is obtained by mixing ethylene glycol dimethyl ether and N,N-dimethylformamide in a mass ratio of 1:1; the indole compound is 3-indolecarboxylic acid; the imidazoline compound is cocoyl hydroxyethyl imidazoline; and the anionic surfactant is sodium dodecylbenzenesulfonate. A method for preparing a photoresist stripping solution composition includes the following steps: Step (1) Mix the indole compound, the imidazoline compound and the organic solvent, and stir at 300 r / min for 30 min to obtain a mixture; Step (2) Add organic alcohol amine, anionic surfactant and mixture to water and stir at 100 r / min for 30 min to obtain photoresist stripping solution composition.

[0051] Comparative Example 3 The photoresist stripping solution composition, based on a total mass percentage of 100%, comprises the following: 10% organic alcohol amine, 60% organic solvent, 0.5% indole compound, 0.05% imidazoline compound, 0.01% anionic surfactant, and the balance being water. Among them, the organic alcohol amine is ethanolamine; the organic solvent is obtained by mixing ethylene glycol dimethyl ether and N,N-dimethylformamide in a mass ratio of 1:1; the indole compound is 3-indolecarboxylic acid; the imidazoline compound is cocoyl hydroxyethyl imidazoline; and the anionic surfactant is sodium dodecylbenzenesulfonate. A method for preparing a photoresist stripping solution composition includes the following steps: Step (1) Mix the indole compound, the imidazoline compound and the organic solvent, and stir at 300 r / min for 30 min to obtain a mixture; Step (2) Add organic alcohol amine, anionic surfactant and mixture to water and stir at 100 r / min for 30 min to obtain photoresist stripping solution composition.

[0052] Comparative Example 4 The photoresist stripping solution composition, based on a total mass percentage of 100%, comprises the following: 10% organic alcohol amine, 60% organic solvent, 0.5% indole compound, 1.5% imidazoline compound, 0.01% anionic surfactant, and the balance being water. Among them, the organic alcohol amine is ethanolamine; the organic solvent is obtained by mixing ethylene glycol dimethyl ether and N,N-dimethylformamide in a mass ratio of 1:1; the indole compound is 3-indolecarboxylic acid; the imidazoline compound is cocoyl hydroxyethyl imidazoline; and the anionic surfactant is sodium dodecylbenzenesulfonate. A method for preparing a photoresist stripping solution composition includes the following steps: Step (1) Mix the indole compound, the imidazoline compound and the organic solvent, and stir at 300 r / min for 30 min to obtain a mixture; Step (2) Add organic alcohol amine, anionic surfactant and mixture to water and stir at 100 r / min for 30 min to obtain photoresist stripping solution composition.

[0053] Comparative Example 5 The photoresist stripping solution composition, based on a total mass percentage of 100%, comprises the following: 10% organic alcohol amine, 60% organic solvent, 0.6% indole compound, 0.01% anionic surfactant, and the balance being water. The organic alcohol amine is ethanolamine; the organic solvent is obtained by mixing ethylene glycol dimethyl ether and N,N-dimethylformamide in a mass ratio of 1:1; the indole compound is 3-indolecarboxylic acid; and the anionic surfactant is sodium dodecylbenzenesulfonate. A method for preparing a photoresist stripping solution composition includes the following steps: Step (1) Mix the indole compound with an organic solvent and stir at 300 r / min for 30 min to obtain a mixture; Step (2) Add organic alcohol amine, anionic surfactant and mixture to water and stir at 100 r / min for 30 min to obtain photoresist stripping solution composition.

[0054] Comparative Example 6 The photoresist stripping solution composition, based on a total mass percentage of 100%, comprises the following: 10% organic alcohol amine, 60% organic solvent, 0.6% imidazoline compound, 0.01% anionic surfactant, and the balance being water. Among them, the organic alcohol amine is ethanolamine; the organic solvent is obtained by mixing ethylene glycol dimethyl ether and N,N-dimethylformamide in a mass ratio of 1:1; the imidazoline compound is cocoyl hydroxyethyl imidazoline; and the anionic surfactant is sodium dodecylbenzene sulfonate. A method for preparing a photoresist stripping solution composition includes the following steps: Step (1) Mix the indole compound with an organic solvent and stir at 300 r / min for 30 min to obtain a mixture; Step (2) Add organic alcohol amine, anionic surfactant and mixture to water and stir at 100 r / min for 30 min to obtain photoresist stripping solution composition.

[0055] Performance testing (1) Sol-gel test After the stripping solutions of Examples 1-9 and Comparative Examples 1-6 were prepared, 100g of each solution was taken and PR adhesive powder (obtained by baking at 140℃ for 2 hours and then grinding) was added in a 2g increment. The stripping solution was kept at 60℃ and the time required for the PR adhesive powder to completely dissolve was observed. The specific time is shown in Table 1.

[0056] Table 1

[0057] As shown in Table 1, the photoresist stripping solution compositions described in Examples 1-9 of this invention exhibit excellent solubility for different amounts of PR photoresist powder, with short dissolution times and high sol-sol efficiency. Comparative Examples 1-4 show significantly reduced dissolution rates due to the amount of indole or imidazoline compounds not being within the scope of this invention; Comparative Examples 5 and 6, lacking imidazoline or indole compounds respectively, show significantly reduced solubility. This demonstrates that this invention, by combining indole and imidazoline compounds and controlling the dosage of each component within a specific range, enables the photoresist stripping solution to achieve synergistic and excellent sol-sol capabilities.

[0058] (2) Service life test After the stripping solutions of Examples 1-9 and Comparative Examples 1-6 were prepared, they were packaged in brown light-proof bottles and placed at 30°C. Samples were taken at 0, 7, 15 days, 1 month and 2 months to test their service life. The results are shown in Table 2.

[0059] Service life test procedure: Take 1g of PR adhesive powder (obtained by baking at 140℃ for 2 hours and then grinding) and add it to 100g of the test stripping solution at 60℃. Record the time required for the PR adhesive to completely dissolve. Keep the test stripping solution at 60℃ for service life test. Dissolve the PR adhesive once every 24 hours within 0-72h, once every 12h within 72h-168h, and once every 6h after 168h, until the time required for the PR adhesive to completely dissolve is greater than 150s. The time interval between the holding time and the first dissolution of the PR adhesive is the service life of the test stripping solution, as shown in Table 2.

[0060] Table 2

[0061] As shown in Table 2, Examples 1-9 of the present invention still have a long service life after being stored at 30°C in the dark for 0-2 months. The initial service life can reach 186-204 hours, and even after 2 months of storage, the service life remains at 162-180 hours. This indicates that the photoresist stripping solution of the present invention has excellent high-temperature stability and long service life, and good storage stability. Among them, Examples 3, 6, and 9 have the best service life, which is consistent with the results of the sol-gel capacity test. This further illustrates that the present invention can significantly improve the overall performance of the stripping solution by compounding and optimizing the dosage of indole and imidazoline compounds.

[0062] Comparative Examples 1-4 showed significantly shorter lifespans than the Examples, indicating that only when the indole and imidazoline compounds are controlled within the range described in this invention can the photoresist stripping solution have a long lifespan. Comparative Example 5, which did not contain imidazoline compounds, and Comparative Example 6, which did not contain indole compounds, showed a significant decrease in lifespan, with an initial lifespan of only 72-84 hours and only 24-36 hours after two months of storage, far lower than the Examples. This demonstrates that indole and imidazoline compounds have a synergistic stabilizing effect in the system, and their combination can significantly delay the performance degradation of the stripping solution under high-temperature operating conditions, greatly extending its lifespan.

[0063] (3) Peeling effect test At 60°C, copper-processed samples to be stripped of photoresist were immersed in the photoresist stripping solution compositions prepared in Examples 1-9 and Comparative Examples 1-6 of this invention. After stripping for 120 seconds, they were rinsed with ultrapure water for 1 minute and finally dried with high-purity nitrogen. The surface of the samples was observed using an optical microscope (OM) to check the photoresist residue. The thickness change of the film was measured using a scanning electron microscope (SEM) to evaluate the corrosion of the metal layer, as shown in Table 3. Residue evaluation: ○: No residue; Δ: Residue present. Corrosion evaluation: A: Metal layer not corroded (film thickness change ≤ 50 Å); B: Metal layer slightly corroded (50 Å < film thickness change ≤ 100 Å); C: Metal layer corroded (film thickness change > 100 Å). in, Figure 1 , Figure 2 The images shown are planar OM diagrams of the samples after being stripped with the photoresist stripping solutions prepared in Example 1 and Comparative Example 6, respectively.

[0064] Table 3

[0065] As can be seen from Table 3, when the photoresist was stripped from the copper process samples in Examples 1-9 of this invention, no photoresist residue was found and there was no corrosion to the metal samples. This indicates that the photoresist stripping solution composition provided by this invention can quickly and effectively strip the photoresist while providing excellent protection to the metal substrate and has excellent compatibility.

[0066] Combination Figure 1 , 2 It can be seen that after the photoresist stripping solution prepared in Example 1 is used for stripping ( Figure 1 The photoresist was completely removed without any residue; after being removed using the photoresist stripping solution prepared in Comparative Example 6 ( Figure 2 There are photoresist residues adhering to the sample surface, and the removal is not complete.

[0067] Comparative Examples 1-4, due to the amount of indole or imidazoline compounds being outside the optimized range of this invention, showed significant photoresist residue after stripping and caused some corrosion to the metal layer. This indicates that unsuitable component content significantly reduces the stripping effect and causes slight corrosion to the substrate. Comparative Example 5, which did not contain imidazoline compounds, and Comparative Example 6, which did not contain indole compounds, not only had severe photoresist residue but also significant corrosion to the metal layer. This demonstrates that using indole or imidazoline compounds alone cannot simultaneously achieve excellent stripping performance and metal layer protection.

[0068] In summary, this invention utilizes the synergistic effect of indole and imidazoline compounds, and strictly controls each component within a suitable range, to enable the photoresist stripping solution composition to possess excellent stripping performance, extremely low metal corrosion, and excellent substrate compatibility. This allows for the complete removal of photoresist in a short time without damaging the metal layer, meeting the high precision and high reliability requirements of high-end display panels and semiconductor manufacturing processes.

[0069] It should be noted that the above-disclosed embodiments are only illustrative of the technical solutions of the present invention and are not intended to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to preferred embodiments, any person skilled in the art should understand that any modifications, changes, or equivalent substitutions made without departing from the scope of the technical solutions of the present invention should fall within the scope of protection of the present invention.

Claims

1. A photoresist stripping solution composition, characterized in that, The composition, based on a total mass percentage of 100%, is as follows: 10%-20% organic alcohol amines, 30%-60% organic solvents, 0.5%-2% indole compounds, 0.1%-1% imidazoline compounds, 0.01%-0.1% anionic surfactants, with the balance being water.

2. The photoresist stripping solution composition according to claim 1, characterized in that, The structural formula of the indole compound is shown in formula (1) below: Equation (1); In formula (1), R1 is hydrogen or C1-C5 alkyl, and n is any integer between 0 and 5.

3. The photoresist stripping solution composition according to claim 2, characterized in that, The indole compound includes at least one of 3-indolecarboxylic acid, 3-indoleacetic acid, 3-indolepropionic acid, 3-indolebutyric acid, 3-indolevaleric acid, 3-indolehexanoic acid, 5-methylindole-3-acetic acid, 5-ethylindole-3-acetic acid, 5-propylindole-3-acetic acid, 5-butylindole-3-acetic acid, and 1-hexylindole-3-carboxylic acid.

4. The photoresist stripping solution composition according to claim 1, characterized in that, The structural formula of the imidazoline compound is shown in formula (2) below: Equation (2); In equation (2), R 21 It is hydrogen, C1-C5 alkyl, C1-C5 alkenyl, C1-C5 hydroxyalkyl, or C1-C5 aralkyl; R 22 It is a C1-C20 alkyl or C1-C20 alkenyl; R 23 and R 24 It is hydrogen, C1-C5 alkyl or C1-C5 alkenyl.

5. The photoresist stripping solution composition according to claim 4, characterized in that, The imidazoline compound includes at least one of 2-methylimidazoline, 2-ethylimidazoline, 1-methyl-2-heptadecylimidazoline, 1-benzyl-2-methyl-2-imidazoline, oleyl hydroxyethylimidazoline, cocoyl hydroxyethylimidazoline, lauryl hydroxyethylimidazoline, stearyl hydroxyethylimidazoline, isostearyl hydroxyethylimidazoline, and 2-undecylimidazoline.

6. The photoresist stripping solution composition according to claim 1, characterized in that, The organic alcohol amines include at least one of ethanolamine, diethanolamine, triethanolamine, monoisopropanolamine, diisopropanolamine, 3-amino-1-propanol, N-methylethanolamine, N-ethylethanolamine, N-propylethanolamine, N,N-dimethylethanolamine, N,N-diethylethanolamine, diethylene glycolamine, and triethylene glycolamine.

7. The photoresist stripping solution composition according to claim 1, characterized in that, The organic solvent includes at least one of C1-C5 alcohols, acetonitrile, toluene, xylene, diethyl ether, tert-butyl methyl ether, tetrahydrofuran, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol dimethyl ether, N,N-dimethylformamide, N,N-dimethylacetamide, dimethyl sulfoxide, and N-methylpyrrolidone.

8. The photoresist stripping solution composition according to claim 1, characterized in that, The anionic surfactant includes benzenesulfonates having C10-C18 long-chain alkyl groups.

9. A method for preparing the photoresist stripping solution composition according to any one of claims 1-8, characterized in that, Includes the following steps: Step (1) involves mixing an indole compound, an imidazoline compound, and an organic solvent to obtain a mixture; Step (2) Add organic alcohol amine, anionic surfactant and mixture to water to obtain photoresist stripping solution composition.

10. The use of a photoresist stripping liquid composition according to any one of claims 1-8 or a photoresist stripping liquid composition prepared by the preparation method of claim 9 in a display panel.

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