Light emitting device and light emitting display apparatus including the same
By employing an electron transport stack structure in the light-emitting device and adjusting the LUMO energy level of the material to reduce the interface energy barrier, the problems of reduced electron transport efficiency and lifetime are solved, resulting in a more efficient and longer-lasting light-emitting device.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- LG DISPLAY CO LTD
- Filing Date
- 2025-10-22
- Publication Date
- 2026-06-05
AI Technical Summary
In existing light-emitting devices, the energy barrier when electrons travel from adjacent functional layers through electron transport layers to the light-emitting layer leads to reduced efficiency, and electron accumulation leads to reduced lifetime, especially in multiple light-emitting stacks.
An electron transport stack structure is adopted, which includes a first material layer adjacent to the first light-emitting layer and a second material layer adjacent to the n-type charge generation layer, with a combination layer between the two. By adjusting the LUMO energy level, the interface energy barrier is reduced, the electron transport efficiency is improved and the accumulation is prevented.
It improves the efficiency and lifespan of light-emitting devices, reduces driving voltage, and improves electron injection characteristics.
Smart Images

Figure CN122161289A_ABST