Polyolefin protective film for semiconductor dicing

Abstract

This invention discloses a polyolefin protective film for semiconductor dicing, comprising a dicing layer, a buffer layer, and an antistatic layer sequentially laminated from top to bottom. The buffer layer is at least one layer and is made of linear low-density polyethylene and an ethylene-based polymer, wherein the ethylene-based polymer is selected from at least one of low-density polyethylene and ethylene-α-olefin copolymers. The dicing layer of this invention contains less than 50% polypropylene, ensuring sufficient flexibility to effectively absorb dicing impact and reduce the risk of wafer breakage. The multi-layer buffer layer design further optimizes stress distribution. The antistatic layer contains more than 50% polypropylene, ensuring dimensional stability and heat resistance during the heating process of dicing and grinding, and the addition of an antistatic agent eliminates static electricity. Through layered design and material optimization, good flexibility, ease of dicing, heat resistance, and antistatic properties are achieved, meeting the stringent requirements of semiconductor dicing processes. The thickness and material ratio of each layer are adjustable to adapt to different wafer sizes and process requirements.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor manufacturing technology, and specifically relates to a polyolefin protective film for semiconductor cutting. Background Technology

[0002] In the semiconductor packaging and testing field, there is a need for flexible, heat-resistant, easy-to-cut polyolefin protective films that do not easily generate debris. Typically, a UV-resistant adhesive is coated on one side of the polyolefin protective film to obtain a thin film with anti-adhesion properties for wafer dicing.

[0003] Existing polyolefin protective films are mostly single-layer structures or simple two-layer composite films, which often fail to simultaneously meet the comprehensive requirements of flexibility, ease of cutting, heat resistance, and antistatic properties. For example, polypropylene (PP) has good heat resistance but insufficient flexibility, which can easily lead to cracks during wafer cutting; while polyethylene (PE) has good flexibility but poor heat resistance and is prone to deformation at high temperatures. In addition, improper selection and proportioning of materials between layers can affect interlayer adhesion and the synergistic effect of overall performance.

[0004] Therefore, developing a multilayer protective film that can balance flexibility, ease of cutting, heat resistance, and antistatic properties is of great significance for improving semiconductor processing yield and efficiency. Summary of the Invention

[0005] To address the problems in the prior art, the present invention aims to provide a polyolefin protective film for semiconductor cutting.

[0006] To achieve the above objectives and technical effects, the technical solution adopted by this invention is as follows: A polyolefin protective film for semiconductor cutting includes a cutting layer, a buffer layer, and an antistatic layer sequentially laminated from top to bottom. The buffer layer is provided with at least one layer and is made of linear low-density polyethylene and an ethylene polymer, wherein the ethylene polymer is selected from at least one of low-density polyethylene and ethylene-α-olefin copolymer.

[0007] Furthermore, the cutting layer is composed of polypropylene and ethylene-α-olefin copolymer, wherein the weight percentage of polypropylene is less than 50%.

[0008] Furthermore, the antistatic layer is composed of polypropylene, ethylene-α-olefin copolymer and antistatic agent, wherein the polypropylene has a weight percentage greater than 50%.

[0009] Furthermore, the antistatic layer comprises the following components in weight percentages: Polypropylene 51-98.9wt% Ethylene-α-olefin copolymer 1-49.9 wt% Antistatic agent 0.1-10wt%.

[0010] Furthermore, the ethylene-α-olefin copolymer is selected from one or a combination of several of ethylene-1-propylene copolymer, ethylene-1-butene copolymer, ethylene-1-hexene copolymer, and ethylene-1-octene copolymer.

[0011] Furthermore, the polypropylene is selected from one or a combination of several of homopolymer polypropylene, block copolymer polypropylene, and random copolymer polypropylene.

[0012] Furthermore, the antistatic agent is selected from one or more of the following: monoglycerides, ethoxylated alkylamines, ethoxylated fatty acid esters, ethoxylated alkanolamides, polyethylene oxide, polyether ester amides, polyolefin and polyether copolymers, ethoxylated alkylamines, cationic antistatic agents, anionic antistatic agents, ethoxylauroylamide, and glycerol stearate.

[0013] Furthermore, the buffer layer has a two-layer structure, consisting of a cutting layer, buffer layer I, buffer layer II, and antistatic layer from top to bottom. Buffer layer I is composed of linear low-density polyethylene and low-density polyethylene, and buffer layer II is composed of linear low-density polyethylene and ethylene-α-olefin copolymer.

[0014] Furthermore, in the buffer layer I, the mass ratio of linear low-density polyethylene to low-density polyethylene is 1:(0.1-10). In the buffer layer II, the mass ratio of linear low-density polyethylene to ethylene-α-olefin copolymer is 1:(0.1-10).

[0015] Furthermore, the thickness of the cutting layer is 10-100 μm, the thickness of the buffer layer is 10-200 μm, and the thickness of the antistatic layer is 10-100 μm.

[0016] Compared with the prior art, the beneficial effects of the present invention are as follows: 1) The polypropylene content in the cutting layer is less than 50%, ensuring sufficient flexibility to effectively absorb cutting impact and reduce the risk of wafer breakage; 2) The buffer layer is made of linear low-density polyethylene and ethylene polymers, which can adjust the flexibility and cutting performance of the membrane; the multi-layer buffer layer design can further optimize stress distribution. 3) The polypropylene content in the antistatic layer is higher than 50%, which ensures dimensional stability and heat resistance during the cutting and grinding heating process, while adding an antistatic agent to eliminate static electricity; 4) Excellent overall performance: Through layered design and material selection, it achieves good flexibility, easy cutting, heat resistance and antistatic properties, meeting the stringent requirements of semiconductor cutting processes; the thickness and material ratio of each layer are adjustable to adapt to different wafer specifications and process requirements. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the structure of Embodiment 1 of the present invention; Figure 2 This is a schematic diagram of the structure of Embodiment 2 of the present invention. Detailed Implementation

[0018] The present invention will now be described in detail so that its advantages and features can be more easily understood by those skilled in the art, thereby providing a clearer and more explicit definition of the scope of protection of the present invention.

[0019] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form to prepare for the more detailed descriptions that follow.

[0020] like Figure 1-2 As shown, this invention discloses a polyolefin protective film for semiconductor dicing, comprising a dicing layer 1, a buffer layer 2, and an antistatic layer 3 sequentially laminated from top to bottom, wherein the buffer layer 2 is provided with at least one layer. By providing multiple buffer layers 2, the buffering performance can be adjusted in a gradient manner, better matching the transition between the dicing layer 1 and the antistatic layer 3.

[0021] In some embodiments, the cutting layer 1 is composed of a polypropylene and an ethylene-α-olefin copolymer, with the polypropylene content being less than 50% by weight. Since the cutting layer 1 is in direct contact with the wafer, it needs to provide sufficient buffering to absorb the cutting impact energy; therefore, the polypropylene content must be less than 50% to ensure sufficient flexibility and prevent wafer breakage due to excessive hardness.

[0022] In some specific embodiments, in the cutting layer 1, the weight percentage of polypropylene is 1-49.9%, and the weight percentage of ethylene-α-olefin copolymer is 50.1-99%.

[0023] In some embodiments, the buffer layer 2 is made of linear low-density polyethylene and an ethylene polymer, wherein the ethylene polymer is selected from at least one of low-density polyethylene and ethylene-α-olefin copolymer.

[0024] In some embodiments, the antistatic layer 3 is composed of polypropylene, ethylene-α-olefin copolymer, and an antistatic agent, with the polypropylene content being greater than 50% by weight. The high polypropylene content in this layer imparts good heat resistance to the protective film, making it less prone to deformation during the heat generated by cutting and grinding; the addition of an appropriate amount of ethylene-α-olefin copolymer can adjust the elasticity and prevent stress transmission caused by an overly hard substrate; the antistatic agent provides antistatic function.

[0025] In some specific embodiments, the antistatic layer 3 comprises the following components by weight percentage: Polypropylene 51-98.9wt% Ethylene-α-olefin copolymer 1-49.9 wt% Antistatic agent 0.1-10wt%.

[0026] In some specific embodiments, the ethylene-α-olefin copolymer is selected from one or a combination of several of ethylene-1-propylene copolymer, ethylene-1-butene copolymer, ethylene-1-hexene copolymer, and ethylene-1-octene copolymer. These copolymers exhibit excellent flexibility and elasticity.

[0027] In some specific embodiments, the polypropylene is selected from one or a combination of homopolymer polypropylene, block copolymer polypropylene, and random copolymer polypropylene.

[0028] In some specific embodiments, the antistatic agent is selected from one or a combination of several of the following: monoglycerides, ethoxylated alkylamines, ethoxylated fatty acid esters, ethoxylated alkanolamides, polyethylene oxide, polyether ester amides, polyolefin and polyether copolymers, ethoxylated alkylamines, cationic antistatic agents, anionic antistatic agents, ethoxylauramide, and glycerol stearate.

[0029] In some specific embodiments, the buffer layer 2 has a two-layer structure (referred to as buffer layer I 21 and buffer layer II 22 respectively), which are cut layer 1, buffer layer I 21, buffer layer II 22 and antistatic layer 3 from top to bottom. Buffer layer I 21 is composed of linear low-density polyethylene and low-density polyethylene, and buffer layer II 22 is composed of linear low-density polyethylene and ethylene-α-olefin copolymer.

[0030] In other embodiments, the buffer layer 2 may have a three-layer or higher structure.

[0031] In some specific embodiments, the mass ratio of linear low-density polyethylene to low-density polyethylene in the buffer layer I 21 is 1:(0.1-10).

[0032] In some specific embodiments, the mass ratio of linear low-density polyethylene to ethylene-α-olefin copolymer in buffer layer II 22 is 1:(0.1-10).

[0033] In some embodiments, the thickness of the cutting layer 1 is 10-100 μm, the thickness of each buffer layer is 10-200 μm, and the thickness of the antistatic layer 3 is 10-100 μm.

[0034] This invention employs a three-layer (or multi-layer) composite structure design, clearly defining the function of each layer: the dicing layer 1 provides the flexibility and cushioning required for contact with the wafer, preventing wafer breakage; the buffer layer 2 provides overall film flexibility and ease of cutting, ensuring smooth dicing by the dicing blade; and the antistatic layer 3 provides heat resistance and antistatic properties, preventing high-temperature deformation and electrostatic hazards. The optimized material composition and proportions of each layer ensure that the performance of each layer is coordinated, without adverse effects, and instead produces a synergistic enhancement effect.

[0035] Example 1 like Figure 1 As shown, a polyolefin protective film for semiconductor cutting includes a cutting layer 1, a buffer layer 2 and an antistatic layer 3 sequentially laminated from top to bottom, wherein the buffer layer 2 is provided with one layer.

[0036] The cutting layer 1 is composed of polypropylene and ethylene-α-olefin copolymer, with the polypropylene content being less than 50% by weight. The cutting layer 1 is in direct contact with the wafer and needs to provide sufficient buffer to absorb the cutting impact energy. Therefore, the polypropylene content must be less than 50% to ensure sufficient flexibility and avoid wafer breakage due to excessive hardness.

[0037] In the cutting layer 1, the weight percentage of polypropylene is 48% and the weight percentage of ethylene-α-olefin copolymer is 52%.

[0038] The buffer layer 2 is made of linear low-density polyethylene and low-density polyethylene in a mass ratio of 1:10.

[0039] The antistatic layer 3 is composed of polypropylene, ethylene-α-olefin copolymer, and an antistatic agent, with polypropylene comprising more than 50% by weight. The high polypropylene content in this layer imparts excellent heat resistance to the protective film, preventing deformation during the heat generated by cutting and grinding. The addition of an appropriate amount of ethylene-α-olefin copolymer adjusts elasticity, preventing stress transmission due to an overly hard substrate. The antistatic agent provides antistatic functionality.

[0040] The antistatic layer 3 comprises the following components by weight percentage: 51 wt% polypropylene 39wt% ethylene-α-olefin copolymer 10 wt% antistatic agent.

[0041] The ethylene-α-olefin copolymer is selected from the ethylene-1-propylene copolymer and has excellent flexibility and elasticity.

[0042] The polypropylene is selected from homopolymer polypropylene.

[0043] The antistatic agent is selected from monoglycerides.

[0044] The cutting layer 1 has a thickness of 100 μm, the buffer layer 2 has a thickness of 200 μm, and the antistatic layer 3 has a thickness of 100 μm.

[0045] This invention employs a three-layer composite structure design, clearly defining the function of each layer: the dicing layer 1 provides the flexibility and cushioning required for contact with the wafer, preventing wafer breakage; the buffer layer 2 provides overall film flexibility and ease of cutting, ensuring smooth dicing by the dicing blade; and the antistatic layer 3 provides heat resistance and antistatic properties, preventing high-temperature deformation and electrostatic hazards. The optimized material composition and proportions of each layer ensure that their performance is coordinated without adverse effects, instead producing a synergistic enhancement effect.

[0046] Example 2 like Figure 2 As shown, a polyolefin protective film for semiconductor dicing includes a dicing layer 1, a buffer layer 2, and an antistatic layer 3, which are sequentially laminated from top to bottom. The buffer layer 2 has two layers. By setting multiple buffer layers 2, the buffering performance can be adjusted in a gradient manner to better match the transition between the dicing layer 1 and the antistatic layer 3.

[0047] The cutting layer 1 is composed of polypropylene and ethylene-α-olefin copolymer, with the polypropylene content being less than 50% by weight. The cutting layer 1 is in direct contact with the wafer and needs to provide sufficient buffer to absorb the cutting impact energy. Therefore, the polypropylene content must be less than 50% to ensure sufficient flexibility and avoid wafer breakage due to excessive hardness.

[0048] In the cutting layer 1, the weight percentage of polypropylene is 40%, and the weight percentage of ethylene-α-olefin copolymer is 60%.

[0049] The antistatic layer 3 is composed of polypropylene, ethylene-α-olefin copolymer, and an antistatic agent, with polypropylene comprising more than 50% by weight. The high polypropylene content in this layer imparts excellent heat resistance to the protective film, preventing deformation during the heat generated by cutting and grinding. The addition of an appropriate amount of ethylene-α-olefin copolymer adjusts elasticity, preventing stress transmission due to an overly hard substrate. The antistatic agent provides antistatic functionality.

[0050] The antistatic layer 3 comprises the following components by weight percentage: 55wt% polypropylene 40wt% ethylene-α-olefin copolymer Antistatic agent 5wt%.

[0051] The ethylene-α-olefin copolymer is selected from the ethylene-1-propylene copolymer and has excellent flexibility and elasticity.

[0052] The polypropylene is selected from homopolymer polypropylene.

[0053] The antistatic agent is selected from ethoxylated alkylamines.

[0054] The buffer layer 2 has a two-layer structure (referred to as buffer layer I 21 and buffer layer II 22 respectively). From top to bottom, it consists of cutting layer 1, buffer layer I 21, buffer layer II 22, and antistatic layer 3. Buffer layer I 21 is composed of linear low-density polyethylene and low-density polyethylene, and buffer layer II 22 is composed of linear low-density polyethylene and ethylene-α-olefin copolymer.

[0055] In buffer layer I 21, the mass ratio of linear low-density polyethylene to low-density polyethylene is 1:5.

[0056] In buffer layer II 22, the mass ratio of linear low-density polyethylene and ethylene-α-olefin copolymer is 1:5.

[0057] The thickness of the cutting layer 1 is 50 μm, the thicknesses of buffer layer I 21 and buffer layer II 22 are 100 μm and the thickness of antistatic layer 3 is 100 μm.

[0058] This invention employs a three-layer (or multi-layer) composite structure design, clearly defining the function of each layer: the dicing layer 1 provides the flexibility and cushioning required for contact with the wafer, preventing wafer breakage; the buffer layer 2 provides overall film flexibility and ease of cutting, ensuring smooth dicing by the dicing blade; and the antistatic layer 3 provides heat resistance and antistatic properties, preventing high-temperature deformation and electrostatic hazards. The optimized material composition and proportions of each layer ensure that the performance of each layer is coordinated, without adverse effects, and instead produces a synergistic enhancement effect.

[0059] The rest is the same as in Example 1.

[0060] Any parts or structures not specifically described in this invention can be made using existing technologies or products, and will not be elaborated upon here.

[0061] The above description is merely an embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural or procedural transformations made based on the content of the present invention specification, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of the present invention.

Claims

1. A polyolefin protective film for semiconductor cutting, characterized in that, It includes a cutting layer, a buffer layer and an antistatic layer, which are sequentially compounded from top to bottom. The buffer layer is provided with at least one layer and is made of linear low-density polyethylene and ethylene polymers. The ethylene polymers are selected from at least one of low-density polyethylene and ethylene-α-olefin copolymers.

2. The polyolefin protective film for semiconductor cutting according to claim 1, characterized in that, The cutting layer is composed of polypropylene and ethylene-α-olefin copolymer, wherein the polypropylene content is less than 50% by weight.

3. The polyolefin protective film for semiconductor cutting according to claim 1, characterized in that, The antistatic layer is composed of polypropylene, ethylene-α-olefin copolymer and antistatic agent, wherein the polypropylene has a weight percentage greater than 50%.

4. The polyolefin protective film for semiconductor cutting according to claim 3, characterized in that, The antistatic layer comprises the following components by weight percentage: Polypropylene 51-98.9wt% Ethylene-α-olefin copolymer 1-49.9 wt% Antistatic agent 0.1-10wt%.

5. A polyolefin protective film for semiconductor cutting according to any one of claims 1-4, characterized in that, The ethylene-α-olefin copolymer is selected from one or a combination of several of ethylene-1-propylene copolymer, ethylene-1-butene copolymer, ethylene-1-hexene copolymer, and ethylene-1-octene copolymer.

6. A polyolefin protective film for semiconductor cutting according to any one of claims 2-4, characterized in that, The polypropylene is selected from one or a combination of several of homopolymer polypropylene, block copolymer polypropylene, and random copolymer polypropylene.

7. The polyolefin protective film for semiconductor cutting according to claim 4, characterized in that, The antistatic agent is selected from one or a combination of several of the following: monoglycerides, ethoxylated alkylamines, ethoxylated fatty acid esters, ethoxylated alkanolamides, polyethylene oxide, polyether ester amides, polyolefin and polyether copolymers, ethoxylated alkylamines, cationic antistatic agents, anionic antistatic agents, ethoxylauramide, and glycerol stearate.

8. The polyolefin protective film for semiconductor cutting according to claim 1, characterized in that, The buffer layer has a two-layer structure, consisting of a cutting layer, buffer layer I, buffer layer II, and antistatic layer from top to bottom. Buffer layer I is composed of linear low-density polyethylene and low-density polyethylene, and buffer layer II is composed of linear low-density polyethylene and ethylene-α-olefin copolymer.

9. A polyolefin protective film for semiconductor cutting according to claim 8, characterized in that, In the buffer layer I, the mass ratio of linear low-density polyethylene to low-density polyethylene is 1:(0.1-10). In the buffer layer II, the mass ratio of linear low-density polyethylene to ethylene-α-olefin copolymer is 1:(0.1-10).

10. A polyolefin protective film for semiconductor cutting according to claim 1, characterized in that, The thickness of the cutting layer is 10-100μm, the thickness of the buffer layer is 10-200μm, and the thickness of the antistatic layer is 10-100μm.

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