Anode target disk, method of making and use thereof

Abstract

The present application relates to anode target disc and its preparation method and application, wherein the anode target disc comprises a substrate and a track layer, the track layer is arranged on the surface of the substrate, a transition layer is arranged inside the substrate, the material of the transition layer is different from the material of the substrate; the thermal conductivity of the material of the transition layer at 25 DEG C is greater than the thermal conductivity of the material of the substrate at 25 DEG C, and / or the melting point temperature of the material of the transition layer is less than the highest working temperature of the substrate. The anode target disc has excellent thermal performance and mechanical performance, and the preparation method is simple and low in cost.

Description

Technical Field

[0001] This invention relates to the field of X-ray equipment technology, and in particular to an anode target disk, its preparation method, and its application. Background Technology

[0002] The anode target is a component that generates X-rays by suddenly blocking high-speed electrons. During use, the overall temperature of the target can rise rapidly to over 1300℃, therefore, strict requirements are placed on the high temperature resistance and high heat capacity of the anode target.

[0003] Molybdenum alloys are commonly used as the base layer for anode target disks due to their excellent mechanical properties at high temperatures, as well as good thermal and electrical conductivity. However, the thermal conductivity of molybdenum alloys at 25°C is only 140 W / (m·K), which is still relatively poor compared to other metals. When used in X-ray tubes, this limits the thermal performance of the anode target disk and even the entire tube. To improve the heat capacity of the anode target disk, molybdenum alloys are usually welded to graphite at high temperatures to increase the heat capacity, i.e., the anode heat storage capacity. However, due to the low thermal conductivity of molybdenum-based alloys, the high temperature of the tungsten-rhenium target surface of the anode target disk cannot be quickly conducted to the graphite, thus limiting the peak electron beam power that the anode target disk can withstand. Summary of the Invention

[0004] Therefore, it is necessary to provide an anode target disk, its preparation method, and its application to address the above problems. This anode target disk has excellent thermal and mechanical properties, and its preparation method is simple and low in cost.

[0005] An anode target disk includes a substrate and an orbital layer, the orbital layer being disposed on the surface of the substrate, and a transition layer being disposed inside the substrate, the material of the transition layer being different from the material of the substrate.

[0006] The thermal conductivity of the transition layer material at 25°C is greater than that of the substrate material at 25°C, and / or the melting point temperature of the transition layer material is lower than the maximum operating temperature of the substrate.

[0007] In one embodiment, the substrate includes a first substrate and a second substrate, with a sealed space between the first substrate and the second substrate, and the transition layer is disposed within the sealed space between the first substrate and the second substrate.

[0008] In one embodiment, the transition layer is uniformly distributed circumferentially along the substrate.

[0009] In one embodiment, the melting point of the transition layer material is 400°C-1400°C.

[0010] In one embodiment, the material of the transition layer has a thermal conductivity greater than 140 W / (m·K) at 25°C.

[0011] In one embodiment, the transition layer is made of metal.

[0012] In one embodiment, the material of the transition layer includes any one or a combination of copper, silver, gold, silver-copper alloy, and gold-copper alloy.

[0013] In one embodiment, the transition layer is made of oxygen-free copper.

[0014] In one embodiment, the first substrate and the second substrate may be made of the same or different materials;

[0015] And / or, the materials of the first substrate and the second substrate are each independently selected from pure molybdenum or a molybdenum alloy;

[0016] And / or, the material of the orbital layer is pure tungsten or a tungsten-rhenium alloy.

[0017] In one embodiment, the volume of the transition layer in its solid state is smaller than the volume of the sealed space between the first substrate and the second substrate.

[0018] In one embodiment, the anode target disk further includes a graphite layer disposed on the side of the substrate away from the track layer, and the graphite layer is connected to the substrate by welding.

[0019] In one embodiment, the transition layer includes a plurality of transition pieces, which are spaced apart circumferentially along the substrate;

[0020] And / or, multiple transition plates are arranged at radial intervals along the substrate.

[0021] In one embodiment, the first substrate and the second substrate are connected by welding.

[0022] A method for preparing an anode target disk includes the following steps:

[0023] At least one groove structure is formed along the circumferential direction of the surface of the first substrate away from the track layer;

[0024] A corresponding transition piece is embedded in each groove structure;

[0025] A second substrate is placed on the side of the first substrate having the transition piece, and the second substrate is soldered to the first substrate so that each transition piece is sealed between the first substrate and the second substrate to form a transition layer, thereby obtaining an anode target disk. The material of the transition layer has a thermal conductivity at 25°C that is greater than that of the materials of the first substrate and the second substrate at 25°C, and / or the melting point temperature of the material of the transition layer is lower than that of the materials of the first substrate and the second substrate.

[0026] In one embodiment, the step of welding the second substrate to the first substrate further includes: placing a graphite layer on the side of the second substrate away from the first substrate, and welding the graphite layer, the second substrate, and the first substrate simultaneously.

[0027] An X-ray tube comprising an anode target disk as described above.

[0028] A CT device includes the X-ray tube described above.

[0029] The anode target disk of the present invention, by setting a transition layer in the substrate, and simultaneously limiting the thermal conductivity of the transition layer material at 25°C to be greater than that of the substrate material at 25°C, and / or the melting point temperature of the transition layer material to be lower than the maximum operating temperature of the substrate, can effectively improve the thermal conductivity of the substrate by utilizing the greater thermal conductivity of the transition layer material at 25°C, thereby increasing the electron beam target power and improving the thermal performance of the anode target disk. Furthermore, by utilizing the lower melting point temperature of the transition layer than the maximum operating temperature of the substrate, when the heat capacity of the X-ray tube reaches a high state, such as reaching or exceeding the maximum operating temperature of the substrate, the transition layer will melt from a solid to a liquid state, absorbing a large amount of heat in the process. This means the anode target disk can store more heat, further reducing the temperature of the orbital layer and the substrate, and improving the thermal performance of the anode target disk. Therefore, the anode target disk of the present invention has excellent thermal and mechanical properties.

[0030] In addition, the preparation method of the anode target disk of the present invention is simple and low in cost, which is conducive to large-scale production. Attached Figure Description

[0031] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1This is a cross-sectional schematic diagram of the anode target disk according to one embodiment of the present invention;

[0033] Figure 2 This is a partial cross-sectional schematic diagram of an anode target disk without a heat storage layer according to an embodiment of the present invention;

[0034] Figure 3 This is a top view schematic diagram of the first substrate in the anode target disk according to an embodiment of the present invention;

[0035] Figure 4 This is a top view schematic diagram of the first type of first substrate in the anode target disk according to an embodiment of the present invention;

[0036] Figure 5 This is a top view schematic diagram of the second type of first substrate in the anode target disk according to one embodiment of the present invention;

[0037] Figure 6 This is a top view schematic diagram of the third type of first substrate in the anode target disk according to one embodiment of the present invention;

[0038] Figure 7 This is a top view schematic diagram of the fourth type of first substrate in the anode target disk according to one embodiment of the present invention;

[0039] Figure 8 This is a top view schematic diagram of the fifth type of first substrate in the anode target disk according to one embodiment of the present invention;

[0040] Figure 9 This is a top view schematic diagram of the sixth type of first substrate in the anode target disk according to one embodiment of the present invention;

[0041] Figure 10 The graph shows the simulation results of the heat capacity of a traditional anode target disk.

[0042] Figure 11 A graph showing the simulation results of the thermal capacity of the anode target disk in Embodiment 1 of the present invention.

[0043] Figure descriptions: 1. Substrate; 2. Track layer; 3. Center hole; 4. First substrate; 5. Second substrate; 6. Transition layer; 7. Gap; 8. Transition plate; 9. Heat storage layer; 10. Groove structure. Detailed Implementation

[0044] To facilitate understanding of the present invention, it will be described in more detail below. However, it should be understood that the present invention can be implemented in many different forms and is not limited to the embodiments or examples described herein. Rather, these embodiments or examples are provided to make the disclosure of the present invention more thorough and complete.

[0045] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the specification of this invention is for the purpose of describing particular embodiments or examples only and is not intended to limit the invention. The optional range of the term "and / or" as used herein includes any one of two or more of the related listed items, as well as any and all combinations of the related listed items, including any two related listed items, any more related listed items, or a combination of all related listed items.

[0046] like Figure 1-3 As shown, an anode target disk according to an embodiment of the present invention includes a substrate 1 and an orbital layer 2. The orbital layer 2 is disposed on the surface of the substrate 1, and a central hole 3 is formed in the middle of the substrate 1. It can be understood that in an X-ray tube, the substrate 1 serves as the main body of the anode target disk, while the orbital layer 2 actually corresponds to the target surface of the anode target disk, which can directly withstand the bombardment of high-energy electron beams and emit X-rays. In one embodiment, the material of the orbital layer 2 is selected from pure tungsten or a tungsten-rhenium alloy, preferably a tungsten-rhenium alloy, wherein the rhenium doping content in the tungsten-rhenium alloy is 5%-10%. This fully utilizes the characteristics of the tungsten-rhenium alloy, namely high hardness, high stability and strength at high temperatures, etc., allowing the anode target disk to withstand repeated impacts from high-speed electron beams under conditions of high temperature, high vacuum, and high-speed rotation, effectively improving the service life of the anode target disk.

[0047] The substrate 1 has a transition layer 6 inside, and the material of the transition layer 6 is different from that of the substrate 1. The thermal conductivity of the material of the transition layer 6 at 25°C is greater than that of the material of the substrate 1 at 25°C, and / or the melting point temperature of the material of the transition layer 6 is lower than the maximum operating temperature of the substrate 1. Preferably, the thermal conductivity of the material of the transition layer 6 at 25°C is greater than that of the material of the substrate 1 at 25°C, and the melting point temperature of the material of the transition layer 6 is lower than the maximum operating temperature of the substrate 1.

[0048] It is understood that in this invention, by setting a transition layer 6 with a specific thermal conductivity and / or melting point temperature inside the substrate 1, wherein the thermal conductivity of the material of the transition layer 6 at 25°C is greater than that of the material of the substrate 1 at 25°C, the substrate 1 of this invention has a higher thermal conductivity than the conventional substrate 1. When the X-ray tube is working, the temperature of the orbital layer 2 rises first, and heat can be quickly conducted away through the substrate 1, thus reducing the temperature of the orbital layer 2 and the substrate 1, correspondingly increasing the power of the electron beam hitting the target, thereby improving the thermal performance of the anode target disk. Utilizing that the melting point temperature of the transition layer 6 is lower than the maximum operating temperature of the substrate 1, when the heat capacity of the X-ray tube reaches a high state, such as reaching or exceeding the maximum operating temperature of the substrate 1, the transition layer 6 will melt, changing from a solid to a liquid state. During this process, it will absorb a large amount of heat, meaning the anode target disk can store more heat, thereby further reducing the temperature of the orbital layer 2 and the first substrate 4, i.e., reducing the temperature of the orbital layer 2 and the substrate 1, and improving the thermal performance of the anode target disk. Therefore, the anode target disk of this invention has excellent thermal performance.

[0049] Furthermore, the material of the transition layer 6 has a thermal conductivity greater than 140 W / (m·K) at 25°C. This setting can further improve the thermal conductivity of the substrate 1 and enhance the thermal performance of the anode target disk.

[0050] The material of the transition layer 6 has a melting point of 400℃-1400℃. With this configuration, when the heat capacity of the X-ray tube reaches a high level, such as when the temperature of the substrate 1 exceeds 1400℃, the transition layer 6 will melt, further reducing the temperature of the orbital layer 2 and the substrate 1, and further improving the thermal performance of the anode target disk.

[0051] Furthermore, a transition layer 6 is sealed inside the substrate 1. This configuration directly replaces a portion of the substrate 1 with the transition layer 6. Therefore, compared to a conventional substrate 1, the substrate 1 of this invention has higher thermal conductivity. When the X-ray tube is operating, the temperature of the orbital layer 2 rises first, and the heat can be quickly conducted away through the first substrate 4, thus reducing the temperature of both the orbital layer 2 and the substrate 1. This correspondingly increases the power of the electron beam hitting the target, thereby improving the thermal performance of the anode target disk.

[0052] Combination Figure 1 As shown, the substrate 1 includes a first substrate 4 and a second substrate 5. The track layer 2 is disposed on the first substrate 4, and the central hole 3 is formed in the middle of the first substrate 4. A sealed space exists between the first substrate 4 and the second substrate 5, and the transition layer 6 is disposed within the sealed space between the first substrate 4 and the second substrate 5. It can be understood that this arrangement allows the transition layer 6 to be sealed inside the substrate 1, thereby improving the thermal performance of the anode target disk without affecting the structure of the substrate 1.

[0053] Considering that the volume of the transition layer 6 increases when it melts from a solid to a liquid state, which may affect the mechanical strength of the entire substrate 1, in one embodiment, grooves, countersunk holes, or blind holes are formed in the portion of the substrate 1 that is in contact with the transition layer 6. These grooves, countersunk holes, or blind holes are used to fill the liquid formed after the transition layer 6 melts, thereby offsetting the increase in volume after the transition layer 6 melts. This effectively prevents the liquid generated by melting from squeezing the substrate 1 and causing deformation of the substrate 1, thereby improving the mechanical strength of the anode target disk. Specifically, grooves, countersunk holes, or blind holes are formed in portions of the first substrate 4 and / or the second substrate 5.

[0054] In another embodiment, the volume of the transition layer 6 in its solid state is smaller than the volume of the enclosed space between the first substrate 4 and the second substrate 5. This arrangement allows the enclosed space to have sufficient space to accommodate the liquid generated after the transition layer 6 melts at high temperatures, thereby offsetting the increase in volume after the transition layer 6 melts. This effectively prevents the liquid generated by the melt from compressing the first substrate 4 and the second substrate 5, thus avoiding deformation of the first substrate 4 and the second substrate 5, and consequently preventing deformation of the substrate 1, thereby improving the mechanical strength of the anode target disk.

[0055] Furthermore, it should be noted that the transition layer 6 is disposed in the sealed space between the first substrate 4 and the second substrate 5. On the one hand, it can seal the liquid generated by melting in the first substrate 4 to prevent it from flowing or evaporating out. On the other hand, it can utilize the characteristics of the second substrate 5 to improve the mechanical strength of the anode target disk.

[0056] Therefore, in this invention, it is preferable that the volume of the transition layer 6 in the solid state is smaller than the volume of the sealed space between the first substrate 4 and the second substrate 5.

[0057] In one embodiment, the surface of the first substrate 4 facing away from the track layer 2 is provided with a groove structure 10. The first substrate 4 and the second substrate 5 are sealed together, and the transition layer 6 is enclosed within the groove structure. It can be understood that the groove structure 10 is a sealed space formed between the first substrate 4 and the second substrate 5, the transition layer 6 is disposed within the surface of the first substrate 4, and the volume of the groove structure 10 is larger than the volume of the transition layer 6 in its solid state.

[0058] The spatial volume of the groove structure 10 can be greater than the volume of the transition layer 6 in the solid state in the following two ways:

[0059] In the first method, the inner wall depth of the groove structure 10 is greater than the thickness of the transition layer 6 in its solid state. In this case, the transition layer 6 is completely located within the groove structure 10 in its solid state, forming a gap 7 with the second substrate 5. It can be understood that the thickness of the transition layer 6 and the existence of this gap 7 ensure that the volume of the transition layer 6 in its solid state is smaller than the volume of the sealed space between the first substrate 4 and the second substrate 5. Therefore, when the transition layer 6 melts, the resulting liquid can fill the gap 7, offsetting the increase in volume after the transition layer 6 melts, preventing deformation of the first substrate 4 and the second substrate 5, and thus improving the mechanical strength of the anode target disk. Furthermore, the gap 7 is 0.2mm-0.5mm in size. This configuration further enhances the mechanical strength of the substrate 1 and the anode target disk.

[0060] The second method: there is a gap between the inner wall of the groove structure 10 and the transition layer 6.

[0061] Of course, in other embodiments, a groove can also be formed on the surface of the second substrate 5 near the first substrate 4, so that when the first substrate 4 and the second substrate 5 are sealed together, the groove on the surface of the second substrate 5 and the groove structure 10 on the surface of the first substrate 4 together form a sealed space for the placement of the transition layer 6.

[0062] In this invention, the transition layer 6 is uniformly distributed along the circumference of the substrate 1. This configuration can further improve the thermal conductivity of the substrate 1 while enhancing the uniformity of thermal conductivity, which is beneficial for further improving the thermal performance of the anode target disk.

[0063] In this invention, the transition layer 6 includes multiple transition pieces 8. It is understood that the number, shape, and arrangement of the transition pieces 8 in the transition layer 6 can be adjusted according to the mechanical, high-temperature resistance, and thermal performance requirements of the substrate 1. For example, the number of transition pieces 8 can be 2, 3, 4, or 5, preferably at least 3; the shape of the transition pieces 8 can be straight, curved, annular, or other symmetrical geometric shapes.

[0064] In one embodiment, a plurality of transition plates 8 are arranged at circumferential intervals along the substrate 1. These intervals can be either equal or unequal. This arrangement helps ensure the dynamic balance of the entire anode target disk during operation.

[0065] like Figure 4The diagram shown is a top view of the first substrate 4 provided by the present invention. The transition layer 6 includes two transition pieces 8 that are uniformly distributed around the first substrate 4. The transition pieces 8 are arc-shaped.

[0066] like Figure 5 The diagram shown is a top view of the second type of first substrate 4 provided by the present invention. The transition layer 6 includes three transition pieces 8 distributed circumferentially along the first substrate 4, and the transition pieces 8 are annular in shape.

[0067] like Figure 6 The diagram shown is a top view of the third type of first substrate 4 provided by the present invention. The transition layer 6 includes four transition pieces 8 evenly distributed along the circumference of the first substrate 4. The transition pieces 8 are strip-shaped.

[0068] In another embodiment, a plurality of transition plates 8 are arranged radially spaced along the substrate 1. These transition plates 8 can be arranged at equal or unequal intervals along the radial direction of the substrate 1. This arrangement helps to ensure the dynamic balance of the entire anode target disk during operation.

[0069] like Figure 7 The diagram shown is a top view of the fourth type of first substrate 4 provided by the present invention. The transition layer 6 includes four transition pieces 8 that are evenly distributed radially along the first substrate 4. The transition pieces 8 are square in shape.

[0070] like Figure 8 The diagram shown is a top view of the fifth type of first substrate 4 provided by the present invention. The transition layer 6 includes two transition pieces 8 that are uniformly distributed radially along the first substrate 4. The transition pieces 8 are in the shape of a ring.

[0071] Furthermore, along the radial direction of the first substrate 4, the spacing between adjacent transition pieces 8 is 1mm-3mm. This arrangement can improve the content of the transition layer 6 within the first substrate 4 while better ensuring the mechanical strength of the fins of the first substrate 4 between the groove structures.

[0072] In other embodiments, multiple transition plates 8 may also be distributed on the substrate 1 in the form of a matrix array. For example... Figure 9 The diagram shown is a top view of the sixth type of first substrate 4 provided by the present invention. The transition layer 6 includes four transition sheet groups that are uniformly distributed around the first substrate 4. Each transition sheet group includes three transition sheets 8 that are arranged radially at intervals along the first substrate 4. The transition sheets 8 are strip-shaped.

[0073] Considering that the thickness and width of the transition layer 6 will affect the thermal and mechanical properties of the substrate 1 and the anode target disk, in one embodiment, the thickness of the transition layer 6 is 0.9mm-2.7mm and the width is 1mm-3mm.

[0074] In one embodiment, the thickness of the second substrate 5 is 1mm-3mm. This configuration better prevents the liquid generated by the melting of the transition layer 6 from squeezing and deforming the second substrate 5, thereby improving the mechanical strength of the anode target disk.

[0075] In one embodiment, the first substrate 4 and the second substrate 5 are connected by welding.

[0076] In this invention, the first substrate 4 and the second substrate 5 may be made of the same or different materials, preferably the same. It can be understood that the composition of the materials of the first substrate 4 and the second substrate 5 may be the same or different.

[0077] Furthermore, the materials of the first substrate 4 and the second substrate 5 are independently selected from pure molybdenum or molybdenum alloys, preferably molybdenum alloy plates, wherein the mass fraction of molybdenum in the molybdenum alloy is above 80%. Utilizing the properties of molybdenum alloys, the anode target disk can have excellent high-temperature resistance. More preferably, it is a molybdenum-zirconium-titanium alloy plate. In the molybdenum-zirconium-titanium alloy plate, the mass fraction of Ti is 0.4%-0.55%, the mass fraction of Zr is 0.66%-0.12%, the mass fraction of C is 0.01%-0.04%, and the remainder is Mo.

[0078] In this invention, the transition layer is made of a metal, preferably any one or a combination of copper, silver, gold, silver-copper alloys, and gold-copper alloys, more preferably copper, and even more preferably oxygen-free copper. The density of oxygen-free copper is 8.96 g / cm³. 3 The oxygen content is ≤30ppm. This configuration, by replacing part of the first substrate 4 with an oxygen-free copper layer, utilizes copper's high thermal conductivity (400W / (m·K)), high specific heat capacity (384.J / (kg·K)), and the fact that copper's density is lower than that of pure molybdenum or molybdenum alloys. This further improves the thermal performance of the anode target disk while reducing the overall weight of the first substrate 4 and the mass of the substrate 1, thereby reducing the overall mass of the anode target disk. Therefore, compared to anode target disks of the same type, the load on the bearings of the anode target disk of this invention is reduced during use, which can improve the bearing life, i.e., the life of the X-ray tube.

[0079] To better suit high-heat X-ray tubes, in one embodiment, such as Figure 1As shown, the substrate 1 also includes a heat storage layer 9, which is disposed on the side of the substrate 1 away from the track layer 2. The heat storage layer 9 is connected to the substrate 1 by welding. With this configuration, the heat storage layer 9 can work in conjunction with the transition layer 6 within the substrate 1 to quickly conduct the temperature of the track layer 2 and the substrate 1 away, thereby better reducing the temperature of the track layer 2 and the substrate 1 and improving the thermal performance of the anode target disk.

[0080] Furthermore, the heat storage layer 9 is preferably a graphite layer. Utilizing the high specific heat capacity (710 J / (kg·K)) of graphite, the heat capacity of the anode target disk can be further increased, that is, the heat storage performance of the anode target disk can be improved.

[0081] It is understood that, compared with the same type of anode target disk, under the same loading power conditions of the X-ray tube, the anode target disk of the present invention has a lower temperature, which can improve the life of the X-ray tube.

[0082] Meanwhile, the present invention also provides a method for preparing an anode target disk, comprising the following steps:

[0083] S1, at least one groove structure 10 is formed along the circumferential direction of the surface of the first substrate 4 away from the track layer 2;

[0084] S2, a corresponding transition piece is embedded in each groove structure 10;

[0085] S3, the second substrate 5 is placed on the side of the first substrate 1 with the transition piece 8, and the second substrate 5 is soldered to the first substrate 4, so that each transition piece 8 is sealed between the first substrate 4 and the second substrate 5 to form a transition layer 6, thereby obtaining an anode target disk. The material of the transition layer 6 has a higher thermal conductivity at 25°C than the materials of the first substrate 4 and the second substrate 5 at 25°C, and / or the melting point temperature of the material of the transition layer 6 is lower than the melting point temperature of the materials of the first substrate 4 and the second substrate 5. It can be understood that in this step, the material of the transition layer 6 is different from the materials of the first substrate 4 and the second substrate 5.

[0086] In one embodiment, in step S1, at least one groove structure 10 is formed along the circumferential direction of the surface of the first substrate 4 away from the track layer 2 by means of CNC numerical control machining or laser processing.

[0087] In one embodiment, before step S2, the method further includes: placing the second substrate 5 and the first substrate 4 with the groove structure 10 in a vacuum furnace for vacuum heating treatment, and then cooling them in the furnace to below 70°C before removing them from the furnace. In the vacuum heating treatment step, the temperature is increased to 1300°C-1400°C at a heating rate of 6°C / min-8°C / min, the vacuum heating time is 60min-120min, and the vacuum degree is less than or equal to 5×10⁻⁶.-4 Pa. This configuration allows for better removal of impurities and gases from the surfaces of the second substrate 5 and the first substrate 4 with the groove structure 10.

[0088] In one embodiment, before vacuum heating the second substrate 5 and the first substrate 4 with the groove structure 10, the second substrate 5 and the first substrate 4 with the groove structure 10 are further cleaned.

[0089] In one embodiment, the inner wall depth of the groove structure 10 is 0.2mm-0.5mm greater than the thickness of the transition layer 6. This arrangement allows for a better formation of a gap 7 between the transition layer 6 and the second substrate 5, and the gap 7 is 0.2mm-0.5mm.

[0090] Furthermore, the groove structure 10 has a depth of 1mm-3mm and a width of 1mm-3mm. This design facilitates the embedding of the corresponding transition layer 6.

[0091] In this invention, the specific structure of the groove structure 10 can be adjusted according to the structure of the corresponding transition layer 6. It can be understood that when the transition layer 6 includes multiple transition pieces 8 evenly distributed circumferentially along the first substrate 4, the groove structure 10 includes multiple grooves evenly distributed circumferentially along the first substrate 4, with each transition piece 8 corresponding to one groove. Therefore, the groove structure 10 can be designed and manufactured according to the required number, shape, and arrangement of the transition pieces 8 in each transition layer 6.

[0092] In step S3, solder is spread on the surface area of ​​the first substrate 4 away from the track layer 2 where the groove structure 10 is not provided. Then, the second substrate 5 is stacked on the surface of the first substrate 4 and comes into contact with the solder, so that the second substrate 5 seals the opening of the groove structure 10. Then, welding is performed to seal the transition layer 6 in the corresponding groove structure 10, thereby obtaining the anode target disk.

[0093] In this invention, in step S3, the welding method can be argon arc welding, laser welding, or brazing, and brazing is preferred in this invention.

[0094] In one embodiment, the solder used is selected from zirconium-based solder and / or titanium-based solder, wherein the zirconium-based solder is selected from pure zirconium solder and / or zirconium alloy solder, preferably zirconium alloy solder, and more preferably, the zirconium content in the zirconium alloy solder is greater than or equal to 98.5%.

[0095] In one embodiment, the welding temperature is 1550℃-1700℃, the welding time is 10min-30min, and the vacuum degree is 2×10 -3 Pa-1×10 -4Pa. This arrangement facilitates a sealed connection between the first substrate 4 and the second substrate 5, and improves the weld strength.

[0096] In this invention, when the substrate 1 further includes a heat storage layer 9, preferably a graphite layer, step S3 further includes: placing the graphite layer on the side of the second substrate 5 away from the first substrate 4, and simultaneously welding the graphite layer, the second substrate 5, and the first substrate 4 to obtain an anode target disk.

[0097] It should be noted that when the graphite layer is set, a vacuum heating treatment is also performed on the graphite layer before step S3. The specific vacuum heating treatment process can refer to the vacuum heating treatment process of the first substrate 4 and the second substrate 5 described above.

[0098] Specifically, solder is first spread on the surface area of ​​the first substrate 4 away from the track layer 2 where the groove structure 10 is not formed. Then, the second substrate 5 is stacked on the surface of the first substrate 4 and in contact with the solder, so that the second substrate 5 seals the opening of the groove structure 10. Next, solder is spread on the surface of the second substrate 5 away from the first substrate 4. The heat storage layer 9, i.e. the graphite layer, is placed on the solder on the surface of the second substrate 5. Finally, they are soldered together to obtain the anode target.

[0099] It should be noted that the solder in this invention exists in the form of foil, such as zirconium alloy solder in the form of zirconium alloy foil. Of course, it can also exist in other forms, and this invention does not make any special requirements. In one embodiment, the thickness of the solder is 0.1mm-0.3mm.

[0100] It is understood that the preparation method of the anode target disk of the present invention has low requirements for processing equipment, and the structure of the groove structure 10 and the transition layer 6 is simple. In particular, the annular groove structure 10 is easy to process and can be mass-produced, which is beneficial to large-scale production. At the same time, when the heat storage layer 9 is included, the welding between the first substrate 4, the second substrate 5 and the heat storage layer 9 can be completed in one step, which improves production efficiency. Moreover, compared with the traditional anode target disk, the preparation method of the present invention can increase the heat capacity of the anode target disk by 20%-30%.

[0101] In addition, the present invention also provides an X-ray tube, including an anode target disk as described above.

[0102] Furthermore, the present invention also provides a CT device, including the X-ray tube described above.

[0103] The following specific embodiments will further illustrate the anode target disk, its preparation method, and its application. However, those skilled in the art will understand that the following embodiments are for illustrative purposes only and should not be considered as limiting the scope of the invention.

[0104] Example 1

[0105] Ten groove structures are formed circumferentially on the surface of the first molybdenum-zirconium-titanium alloy plate away from the track layer using laser processing. Each groove structure is an annular groove, and the ten annular grooves are arranged radially at intervals. The interval between adjacent groove structures is 2 mm, and the depth and width of the annular grooves are 2 mm and 3 mm respectively.

[0106] The second molybdenum-zirconium-titanium alloy plate and the first molybdenum-zirconium-titanium alloy plate with a grooved structure were degreased and cleaned, and the graphite was ultrasonically cleaned, wherein the graphite density was 1.85 g / cm³. 3 The ash content is ≤20ppm. Then, the cleaned first molybdenum-zirconium-titanium alloy plate, the second molybdenum-zirconium-titanium alloy plate, and graphite are placed in a vacuum furnace for vacuum heating treatment. The temperature is increased to 1300℃ at a heating rate of 7℃ / min, and the vacuum heating time is 110min. The high-temperature vacuum degree of the vacuum equipment is approximately 5×10⁻⁶. -4 Pa; then cool with the furnace, and remove from the furnace after cooling to 65°C.

[0107] A corresponding oxygen-free copper ring sheet is embedded in each groove structure. The oxygen-free copper ring sheet has a thickness of 1.9 mm and a width of 3 mm. The melting point of the oxygen-free copper ring sheet is 1083℃, and its thermal conductivity at 25℃ is 400 W / (m·K). A 0.1 mm thick zirconium alloy foil is spread on the surface area of ​​the first molybdenum-zirconium-titanium alloy plate away from the track layer without groove structures. Then, a second molybdenum-zirconium-titanium alloy plate after vacuum heat treatment is stacked on the zirconium alloy foil, so that the first molybdenum-zirconium-titanium alloy plate seals the groove structure. Next, a 0.1 mm thick zirconium alloy foil is spread on the surface of the second molybdenum-zirconium-titanium alloy plate away from the first molybdenum-zirconium-titanium alloy plate. Then, graphite after vacuum heat treatment is placed on the zirconium alloy foil. Finally, the whole thing is placed in a vacuum brazing furnace for welding. The brazing temperature is 1600℃, the brazing time is 20 min, and the vacuum degree is approximately 2×10⁻⁶. -3 After welding, the target plate is cooled to 60°C in the furnace and removed to obtain the anode target.

[0108] Example 2

[0109] Example 2 differs from Example 1 only in that the spacing between adjacent groove structures is 4 mm, the depth of the annular groove is 2 mm, and the width is 2 mm; in the vacuum heating process, the temperature is increased to 1400°C at a rate of 6°C / min, the vacuum heating time is 80 min, and the high-temperature vacuum degree of the vacuum equipment is approximately 3 × 10⁻⁶. -4Pa; then cooled in the furnace to 65℃ before being removed from the furnace; the thickness of the oxygen-free copper ring sheet is 1.8mm, the width is 2mm, the brazing temperature is 1550℃, the brazing time is 30min, and the vacuum degree is approximately 1×10 -3 Pa.

[0110] Example 3

[0111] Example 3 differs from Example 1 only in that the spacing between adjacent groove structures is 1 mm, the depth of the annular groove is 3 mm, and the width is 1 mm; in the vacuum heating process, the temperature is increased to 1400°C at a rate of 8°C / min, the vacuum heating time is 60 min, and the high-temperature vacuum degree of the vacuum equipment is approximately 4 × 10⁻⁶. -4 Pa; then cooled in the furnace to 65℃ before being removed from the furnace; the thickness of the oxygen-free copper ring sheet is 2.7mm, the width is 1mm, the brazing temperature is 1700℃, the brazing time is 10min, and the vacuum degree is approximately 1×10 -4 Pa.

[0112] Example 4

[0113] The only difference between Example 4 and Example 1 is that the first pure molybdenum plate is used instead of the first molybdenum-zirconium-titanium alloy plate, and the second pure molybdenum plate is used instead of the second molybdenum-zirconium-titanium alloy plate.

[0114] Example 5

[0115] Compared with Example 1, Example 5 differs only in that an oxygen-free silver ring sheet replaces an oxygen-free copper ring sheet. The oxygen-free silver ring sheet has a thickness of 0.9 mm and a width of 3 mm. The melting point of the oxygen-free silver ring sheet is 961.8 °C, and its thermal conductivity at 25 °C is 430 W / (m·K).

[0116] Example 6

[0117] Compared with Example 1, Example 6 differs only in that an oxygen-free gold ring sheet is used instead of an oxygen-free copper ring sheet. The oxygen-free gold ring sheet has a thickness of 0.9 mm and a width of 3 mm. The melting point of the oxygen-free gold ring sheet is 1064.2℃ and its thermal conductivity at 25℃ is 320 W / (m·K).

[0118] Example 7

[0119] The only difference between Example 7 and Example 1 is that Example 7 does not contain graphite.

[0120] Example 8

[0121] Compared with Example 1, Example 8 differs only in that six groove structures are formed circumferentially along the surface of the first molybdenum-zirconium-titanium alloy plate away from the track layer using laser processing. Each groove structure includes six strip-shaped grooves evenly distributed along the circumference of the first molybdenum-zirconium-titanium alloy plate. The spacing between adjacent groove structures is 2 mm, the depth of the strip-shaped grooves is 1 mm, and the width is 3 mm. Thirty-six oxygen-free copper ring pieces are respectively embedded in the corresponding strip-shaped grooves on the surface of the first molybdenum-zirconium-titanium alloy plate after vacuum heating treatment.

[0122] Example 9

[0123] Compared with Example 8, Example 9 differs only in that the strip-shaped grooves in Example 8 are replaced with arc-shaped grooves. Each groove structure includes arc-shaped grooves that are evenly distributed along the circumference of the first molybdenum-zirconium-titanium alloy plate, and the six groove structures are arranged radially at intervals along the first molybdenum-zirconium-titanium alloy plate.

[0124] Example 10

[0125] Compared with Example 9, Example 10 differs only in that three first groove structures and three second groove structures are formed circumferentially along the surface of the first molybdenum-zirconium-titanium alloy plate away from the track layer using laser processing. Each first groove structure is an annular groove as described in Example 1, and the three annular grooves are arranged radially at intervals. Each second groove structure includes arc-shaped grooves evenly distributed circumferentially along the first molybdenum-zirconium-titanium alloy plate. The three first groove structures and the three second groove structures are arranged radially at intervals along the first molybdenum-zirconium-titanium alloy plate in sequence, or the three first groove structures and the three second groove structures are arranged alternately radially along the first molybdenum-zirconium-titanium alloy plate.

[0126] Example 11

[0127] Compared with Example 1, Example 11 differs only in that a zinc ring sheet is used instead of an oxygen-free copper ring sheet. The zinc ring sheet has a thickness of 0.9 mm and a width of 3 mm. The oxygen-free gold ring sheet has a melting point of 419 °C and a thermal conductivity of 121 W / (m·K) at 25 °C.

[0128] The anode target disk prepared in Example 1 and the traditional anode target disk (i.e., without using a transition layer to replace part of the first molybdenum-zirconium-titanium alloy plate) were applied to the thermal simulation model of the heat capacity X-ray tube, and the thermal capacity simulation results were tested. Figure 10-11 As shown, from Figure 10-11 As can be seen, with other X-ray tube components remaining unchanged, the maximum heat capacity of a traditional 3.8 MHU anode target is approximately 2650 KJ, where the heat capacity of the X-ray tube HU = Joules × 2. 1 / 2The anode target disk prepared in Example 1 of this invention has a maximum heat capacity of 3200 KJ, or 4.5 MHU. Therefore, the anode target disk of this invention has high thermal performance.

[0129] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0130] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. An anode target disk, characterized in that, The anode target disk includes a substrate and an orbital layer. The orbital layer is disposed on the surface of the substrate. A transition layer is disposed inside the substrate. The material of the transition layer is different from that of the substrate. The thermal conductivity of the transition layer material at 25°C is greater than that of the substrate material at 25°C, and / or the melting point temperature of the transition layer material is lower than the maximum operating temperature of the substrate.

2. The anode target disk according to claim 1, characterized in that, The substrate includes a first substrate and a second substrate, with a sealed space between the first substrate and the second substrate, and the transition layer is disposed within the sealed space between the first substrate and the second substrate.

3. The anode target disk according to claim 1, characterized in that, The transition layer is uniformly distributed along the circumference of the substrate.

4. The anode target disk according to claim 1, characterized in that, The material of the transition layer has a melting point of 400℃-1400℃.

5. The anode target disk according to claim 1, characterized in that, The material of the transition layer has a thermal conductivity greater than 140 W / (m·K) at 25°C.

6. The anode target disk according to claim 1, characterized in that, The material of the transition layer includes metal.

7. The anode target disk according to claim 6, characterized in that, The material of the transition layer includes any one or a combination of copper, silver, gold, silver-copper alloy, and gold-copper alloy.

8. The anode target disk according to claim 6, characterized in that, The material of the transition layer includes oxygen-free copper.

9. The anode target disk according to claim 2, characterized in that, The first substrate and the second substrate may be made of the same or different materials; And / or, the materials of the first substrate and the second substrate are each independently selected from pure molybdenum or a molybdenum alloy; And / or, the material of the orbital layer is pure tungsten or a tungsten-rhenium alloy.

10. The anode target disk according to claim 2, characterized in that, The volume of the transition layer in its solid state is smaller than the volume of the sealed space between the first substrate and the second substrate.

11. The anode target disk according to claim 1, characterized in that, The anode target disk also includes a graphite layer, which is disposed on the side of the substrate away from the track layer, and the graphite layer is connected to the substrate by welding.

12. The anode target disk according to claim 1, characterized in that, The transition layer includes multiple transition pieces, which are spaced apart circumferentially along the substrate. And / or, multiple transition plates are arranged at radial intervals along the substrate.

13. The anode target disk according to claim 2, characterized in that, The first substrate and the second substrate are connected by welding.

14. A method for preparing an anode target disk, characterized in that, Includes the following steps: At least one groove structure is formed along the circumferential direction of the surface of the first substrate away from the track layer; A corresponding transition piece is embedded in each groove structure; A second substrate is placed on the side of the first substrate having the transition piece, and the second substrate is soldered to the first substrate so that each transition piece is sealed between the first substrate and the second substrate to form a transition layer, thereby obtaining an anode target disk. The material of the transition layer has a thermal conductivity at 25°C that is greater than that of the materials of the first substrate and the second substrate at 25°C, and / or the melting point temperature of the material of the transition layer is lower than that of the materials of the first substrate and the second substrate.

15. The method for preparing the anode target disk according to claim 14, characterized in that, The step of welding the second substrate to the first substrate further includes: placing a graphite layer on the side of the second substrate away from the first substrate, and welding the graphite layer, the second substrate, and the first substrate simultaneously.

16. An X-ray tube, characterized in that, Includes the anode target disk as described in any one of claims 1-13.

17. A CT scanner, characterized in that, Including the X-ray tube as described in claim 16.

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