An atomic layer etching apparatus for chip preparation

Abstract

The application relates to the technical field of wafer processing, in particular to an atomic layer etching equipment for chip preparation, which comprises a spherical shell, a material inlet, an air outlet pipe, a modification cavity and a removal cavity are arranged on the surface of the spherical shell and are arranged in a ring array around the spherical shell, a hollow center ball is arranged at the center of the spherical shell, a rotating body is rotationally installed in the inner cavity of the spherical shell and is attached to the inner wall, a spherical cavity matched with the center ball is arranged at the center of the rotating body, and a through hole matched with a fixing pipe is arranged on the inner wall of the spherical cavity; beneficial effects are as follows: the hollow center ball is arranged at the center of the spherical shell, the center ball is fixedly connected with the spherical shell through the fixing pipe, a purge pipe is arranged through the center ball, an exhaust port is arranged through the surface of the center ball, compared with a traditional etching equipment, the device repeatedly purges various gases, reduces or even cancels the requirement for the vacuum degree of the equipment, so that the modification gas and the removal gas are prevented from being mutually polluted.

Description

Technical Field

[0001] This invention relates to the field of wafer fabrication technology, specifically to an atomic layer etching apparatus for chip fabrication. Background Technology

[0002] Atomic layer etching (ALT) equipment is an ultra-high precision processing device used in chip manufacturing. Its core principle lies in breaking down the etching process into two independent reaction steps: surface modification and selective removal. Both reaction steps are self-limiting, meaning they automatically stop after each step is completed.

[0003] In the prior art, Chinese invention with publication number CN111463094B discloses an atomic layer etching apparatus and an atomic layer etching method. It utilizes an electrode plate assembly of an intermediate electrode mechanism to generate capacitively coupled plasma, which helps to improve the uniformity of plasma density distribution, thereby improving activation uniformity and etching uniformity, and further improving process uniformity.

[0004] Currently, in traditional atomic layer etching (ALE) equipment, the modification and removal reactions are mostly performed within the same chamber. However, during the gas vacuum switching process, the required vacuum level within the chamber is too high, and residual gas can easily contaminate subsequent gases, thus affecting production efficiency and accuracy. Therefore, this invention proposes an ALE equipment for chip fabrication to solve the above problems. Summary of the Invention

[0005] The purpose of this invention is to provide an atomic layer etching apparatus for chip fabrication, so as to solve the problem mentioned in the background art that residual gas can lead to subsequent gas contamination and affect the accuracy of the reaction.

[0006] To achieve the above objectives, the present invention provides the following technical solution: an atomic layer etching apparatus for chip fabrication, comprising: A spherical shell has a material inlet, an air outlet, a modification chamber, and a removal chamber on its surface, which are arranged in a ring array around the spherical shell. A hollow central sphere is provided at the center of the spherical shell. The central sphere is fixedly connected to the spherical shell by a fixing pipe. A purge pipe is fixedly installed inside the central sphere. An exhaust port is provided on the surface of the central sphere, passing through its center and perpendicular to the purge pipe. A rotating body is rotatably mounted inside a spherical shell cavity and fits against the inner wall of the shell. A spherical cavity adapted to the central sphere is opened at the center of the rotating body, and a through hole adapted to the fixed tube is opened on the inner wall of the spherical cavity. Two symmetrically distributed material placement grooves are opened on the surface of the rotating body. A connecting port is opened at the bottom of the material placement groove and the connecting port communicates with the spherical cavity. A wafer body is placed inside the material placement groove cavity.

[0007] Preferably, the feed inlet and the exhaust pipe are respectively aligned with the two ends of the purge pipe, the modification chamber and the removal chamber are respectively aligned with the two ends of the exhaust port, and a plasma generator is provided inside the removal chamber.

[0008] Preferably, the bottom of the material storage trough is fixedly connected to a boss, and there is a gap between the outer side wall of the boss and the inner side wall of the material storage trough. The bottom of the boss is provided with a collection cavity communicating with the communication port, and the inner side wall of the collection cavity is provided with a vent hole. A magnet block is fixedly embedded on the surface of the boss.

[0009] Preferably, one end of the fixed tube extends to the outside of the spherical shell, the middle of the purge tube is fixedly connected to an air supply tube, and the air supply tube is coaxial with the fixed tube. One end of the air supply tube extends to the outside of the opening of the fixed tube, and a gap is left between the air supply tube and the fixed tube.

[0010] Preferably, a partition is fixedly provided between the fixed pipe and the air supply pipe. The partition divides the inner cavity of the fixed pipe into two spaces along the axis of the fixed pipe. A sealing ring is fixedly provided at the open end of the fixed pipe. An exhaust pipe one and an exhaust pipe two are fixedly connected to the surface of the sealing ring, and the two are respectively connected to the two spaces inside the fixed pipe.

[0011] Preferably, a fixed frame is fixedly connected to the outer wall of the spherical shell, and a drive motor is installed on the fixed frame. A drive disk is fixedly connected to the shaft end of the drive motor. A driven disk that is driven to rotate intermittently is provided on the outer side of the drive disk. A rotating shaft is fixed in the middle of the driven disk. The shaft end of the rotating shaft movably passes through the spherical shell and is inserted and fixed to the rotating body.

[0012] Preferably, a box body is provided on the outer side of the spherical shell, and the spherical shell is fixed to the lower side of the top plate of the box body. A material hopper is fixedly provided on the upper part of the box body, and the material hopper is connected to the inner cavity of the material port. A clamping assembly is installed inside the material hopper, and the clamping assembly passes the wafer body through the material port and places it in the inner cavity of the material placement groove.

[0013] Preferably, the clamping assembly includes a robotic arm, with a connecting frame fixed to the lower end of the robotic arm. A guide frame is fixedly connected to the lower side of the connecting frame, and the guide frame is arranged in a "+" shape. A turntable is rotatably connected to the guide frame below it. Four connecting arms arranged in a circular array are rotatably connected to the edge of the turntable via pins. One end of each connecting arm is provided with a clamping rod, and the four clamping rods are arranged in a circular array and clamped to the outer edge of the wafer body.

[0014] Preferably, a forward and reverse motor is fixedly installed on the surface of the guide frame, and the shaft end of the forward and reverse motor is fixedly connected to the middle of the turntable. One end of the connecting arm is fixed with a collar, and the collar is rotatably sleeved on the outside of the clamping rod. Guide grooves are opened at all four ends of the guide frame. A guide slider is fixed at the upper end of the clamping rod. The guide slider is slidably installed in the inner cavity of the guide groove and is adapted to it.

[0015] Preferably, the guide slider has limit plates fixed at both ends, and the two limit plates are respectively attached to the upper and lower sides of the guide frame. The lower end of the clamping rod is fixed with a baffle, and the baffle is attached to the upper surface of the wafer body. A flexible layer is fixed on the outer side of the lower end of the clamping rod, and the flexible layer is attached to the outer edge of the wafer body. The outer side wall of the boss is provided with clearance grooves corresponding to the four clamping rods.

[0016] Compared with the prior art, the beneficial effects of the present invention are: This invention features a hollow central sphere at the center of a spherical shell, fixedly connected to the shell via a tube. A purge tube runs through the interior of the central sphere, and an exhaust port runs through its surface perpendicular to the purge tube. Two symmetrically distributed material placement slots are formed on the surface of a rotating body, each with a connecting port at its bottom. The wafer is placed within the material placement slot. As the rotating body rotates: ① When the connecting port connects to the purge tube, auxiliary gas is introduced to purge, ensuring only auxiliary gas remains within the material placement slot; ② After the rotating body rotates another 90 degrees, the two material placement slots connect to the modification and removal chambers respectively, while the connecting ports connect to the exhaust port. Modification and removal gases are then introduced into the two material placement slots for surface modification and ionization removal, respectively. By repeating steps ① and ②, high-precision etching of the wafer can be achieved. Compared to traditional etching equipment, this device reduces or even eliminates the vacuum requirement by repeatedly purging with various gases, thus avoiding cross-contamination between the modification and removal gases. Attached Figure Description

[0017] Figure 1 This is a three-dimensional schematic diagram of the overall structure of the present invention; Figure 2 This is a schematic diagram of the installation of the spherical shell structure of the present invention; Figure 3 This is a cross-sectional schematic diagram of the spherical shell and rotating body structure of the present invention; Figure 4 This is a schematic cross-sectional view of the rotating body of the present invention after rotation; Figure 5 This is a three-dimensional schematic diagram of the spherical shell structure of the present invention; Figure 6 This is a half-sectional schematic diagram of the central sphere structure of the present invention; Figure 7 This is a three-dimensional schematic diagram of the boss structure of the present invention; Figure 8 This is a partial cross-sectional view of the rotating body structure of the present invention; Figure 9 This is a three-dimensional schematic diagram of the clamping component structure of the present invention; Figure 10 This is a three-dimensional schematic diagram of the clamping rod structure of the present invention.

[0018] In the diagram: 1. Box body; 11. Hopper; 2. Clamping assembly; 21. Robotic arm; 22. Connecting frame; 23. Guide frame; 231. Guide chute; 24. Turntable; 25. Connecting arm; 251. Collar; 26. Clamping rod; 261. Baffle; 262. Flexible layer; 263. Guide slider; 264. Limiting plate; 27. Forward and reverse motor; 3. Spherical shell; 31. Inlet; 32. Air outlet; 33. Modification chamber; 34. Removal chamber; 35. Fixing frame; 36. Drive motor 37. Drive plate; 38. Driven plate; 39. Rotating shaft; 4. Center ball; 41. Purge pipe; 411. Air supply pipe; 42. Exhaust port; 5. Fixed pipe; 51. Partition; 52. Sealing ring; 53. Exhaust pipe one; 54. Exhaust pipe two; 6. Rotating body; 601. Spherical cavity; 602. Through hole; 61. Material tray; 62. Connecting port; 63. Boss; 631. Clearance groove; 64. Collection cavity; 641. Vent hole; 65. Magnet block; 7. Wafer body. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of the present invention clear and complete, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only some, not all, embodiments of the present invention, and are merely illustrative of the embodiments of the present invention. They are not intended to limit the embodiments of the present invention. All other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0020] Please see Figures 1 to 10 The present invention provides a technical solution: Example 1: An atomic layer etching apparatus for chip fabrication includes a spherical shell 3 and a rotating body 6. The core of atomic layer etching technology lies in the surface modification treatment and selective removal treatment of the wafer. The modifying gas used in the modification treatment is chlorine (Cl2), and the removal gas used in the removal treatment is argon (Ar, which ionizes under plasma to form Ar). + The modified layer is selectively removed by physical bombardment. In addition, to avoid cross-contamination between the modifying gas and the removal gas, an auxiliary gas is required for purging. Nitrogen (N2) is usually chosen as the auxiliary gas because it is very chemically stable.

[0021] Specifically, a material inlet 31, an air outlet 32, a modification chamber 33, and a removal chamber 34 are provided on the surface of the spherical shell 3, and the four are arranged in a ring array around the spherical shell 3, such as... Figure 3 As shown, the feed inlet 31 is located at the upper part of the spherical shell 3. The feed inlet 31, modification chamber 33, vent pipe 32, and removal chamber 34 are arranged counterclockwise around the spherical shell 3. A hollow central sphere 4 is set at the center of the spherical shell 3. Although the central sphere 4 is hollow, its wall thickness is relatively large. The central sphere 4 is fixedly connected to the spherical shell 3 by a fixing pipe 5. The fixing pipe 5 itself is hollow, and its inner cavity is in communication with the inner cavity of the central sphere 4. A purge pipe 41 is fixedly installed through the inside of the central sphere 4. An exhaust port 42 is opened through the surface of the central sphere 4, passing through its center, and the exhaust port 42 is perpendicular to the purge pipe 41. Figure 3 , Figure 4 and Figure 6 As shown, the inner cavity of the purge tube 41 is not connected to the inner cavity of the central ball 4. By supplying auxiliary gas to the inner cavity of the central ball 4, it can be ensured that auxiliary gas can be blown out from both ends of the central ball 4 at the same time, so as to facilitate the subsequent purging of the modified gas and the removed gas. Secondly, the rotating body 6 is rotatably installed inside the spherical shell 3 and fits against the inner wall. The surface of the rotating body 6 and the inner wall of the spherical shell 3 maintain a sealed fit. The rotating body 6 can only rotate inside the spherical shell 3. A spherical cavity 601 adapted to the central sphere 4 is opened at the center of the rotating body 6 to ensure the installation of the central sphere 4. The inner wall of the spherical cavity 601 is provided with a through hole 602 adapted to the fixing tube 5. Therefore, the axis of the fixing tube 5 is coincident with the rotation axis of the rotating body 6. Two symmetrically distributed material slots 61 are opened on the surface of the rotating body 6. A connecting port 62 is opened at the bottom of the material slot 61 and the connecting port 62 communicates with the spherical cavity 601. The wafer body 7 is placed inside the material slot 61. As the rotating body 6 rotates: ① Figure 3 As shown, when the two material troughs 61 are distributed vertically, the two material troughs 61 can be connected to the material inlet 31 and the air outlet 32 ​​respectively, and the two material troughs 61 are also connected to both ends of the purge pipe 41 respectively. Therefore, the purge gas blown out by the purge pipe 41 can enter the inner cavity of the two material troughs 61 respectively, so as to realize the simultaneous purge of the inner cavity of the two material troughs 61; ② As Figure 4As shown, when the two material placement tanks 61 are distributed to the left and right, the two material placement tanks 61 are respectively connected to the inner cavities of the modification cavity 33 and the removal cavity 34. At this time, the modifying gas in the inner cavity of the modification cavity 33 enters the inner cavity of the material placement tank 61 at the left end for modifying the surface of the wafer body 7, while the removing gas in the inner cavity of the removal cavity 34 enters the inner cavity of the material placement tank 61 at the right end for selectively removing the surface of the wafer body 7. At the same time, since the two material placement tanks 61 are respectively connected to the two ends of the exhaust port 42, the modification gas in the inner cavity of the modification cavity 33... The modified gas and the removed gas in the removal chamber 34 can enter the inner chambers at both ends of the exhaust port 42 respectively. As the modified gas and the removed gas flow, the auxiliary gas in the inner chamber of the material tank 61 can be blown away, thereby ensuring that the gas purity in the inner chamber of the material tank 61 is higher. In addition, it should be noted that since the inner chambers of the two exhaust ports 42 will converge inside the central ball 4, in order to avoid the modified gas and the removed gas reacting here, a baffle 51 will be set to separate the two gases, as described below.

[0022] To improve the processing efficiency of the wafer body 7, the feed port 31 and the exhaust pipe 32 of this application are respectively open at both ends of the purge pipe 41, so that when the rotating body 6 rotates, the feed port 31 and the exhaust pipe 32 can simultaneously connect to the inner cavities of the two feed tanks 61, and the upper and lower ends of the purge pipe 41 can simultaneously connect to the inner cavities of the two feed tanks 61, thereby ensuring that the two wafer bodies 7 in the inner cavities of the two feed tanks 61 can be purged with auxiliary gas at the same time. The modification cavity 33 and the removal cavity 34 are respectively open at both ends of the exhaust port 42, ensuring that the two wafer bodies 7 in the inner cavities of the two feed tanks 61 can be modified and removed at the same time, thereby improving the processing efficiency of the wafer body 7. A plasma generator known in the prior art is provided in the inner cavity of the removal cavity 34 to ionize the removal gas into an ion state, which will not be described in detail here.

[0023] To ensure that the residual gas inside the material storage tank 61 can be evenly purged, this application further includes a boss 63 fixedly connected to the bottom of the material storage tank 61, with a gap between the outer wall of the boss 63 and the inner wall of the material storage tank 61. A collecting cavity 64 communicating with the connecting port 62 is provided at the bottom of the boss 63, and a vent hole 641 is provided on the inner wall of the collecting cavity 64. Figure 8As shown, the material placement tank 61, vent 641, collection cavity 64, connecting port 62, and spherical cavity 601 are sequentially connected. Multiple vents 641 are arranged in a ring array on the inner wall of the collection cavity 64 to ensure uniform gas flow in the gap between the inner wall of the material placement tank 61 and the outer wall of the boss 63, thereby improving the purging effect on residual gas in the inner cavity of the material placement tank 61. A magnet 65 is fixedly embedded on the surface of the boss 63. The magnet 65 is mainly used to adsorb and position the wafer body 7, thereby preventing the wafer body 7 from shifting position during the rotation of the rotating body 6. In addition, it should be noted that in order to avoid the gas flow affecting the position of the wafer body 7, the diameter of the boss 63 of this device needs to be larger than the diameter of the wafer body 7.

[0024] In order to deliver auxiliary gas into the cavity of the purge tube 41, one end of the fixed tube 5 of this application extends to the outside of the spherical shell 3. The fixed tube 5 can discharge the gas in the cavity of the central ball 4. A gas supply tube 411 is fixedly connected in the middle of the purge tube 41, and the gas supply tube 411 is coaxial with the fixed tube 5. One end of the gas supply tube 411 extends to the outside of the opening of the fixed tube 5. The gas supply tube 411 is mainly used to continuously deliver auxiliary gas into the cavity of the purge tube 41. Since there is a gap between the gas supply tube 411 and the fixed tube 5, the gas in the cavity of the central ball 4 can flow and be discharged along the gap between the fixed tube 5 and the gas supply tube 411.

[0025] To prevent the modified gas and the removal gas from mixing and reacting within the inner cavity of the central sphere 4, this application further includes a partition 51 fixedly installed between the fixed pipe 5 and the gas supply pipe 411. The partition 51 divides the inner cavity of the fixed pipe 5 into two spaces along the axis of the fixed pipe 5, thereby preventing the modified gas and the removal gas from mixing and reacting after entering the inner cavity of the central sphere 4. A sealing ring 52 is fixedly installed at the open end of the fixed pipe 5. An exhaust pipe 1 53 and an exhaust pipe 2 54 are fixedly connected to the surface of the sealing ring 52, and both are respectively connected to the two spaces inside the fixed pipe 5. The exhaust pipe 1 53 and the exhaust pipe 2 54 are respectively used to exhaust the modified gas and the removal gas, thereby allowing the rotating body 6 to rotate to the desired position. Figure 4 In the indicated state, the modified gas in the modified cavity 33 and the removed gas in the removed cavity 34 can carry away the auxiliary gas in the two material tanks 61 respectively during flow, ensuring higher purity of the modified gas and removed gas in the two material tanks 61, thereby improving the processing accuracy of the wafer body 7. In addition, it should be noted that in order to control the delivery and discharge of the gas, the gas supply pipe 411, exhaust pipe 1 53 and exhaust pipe 2 54 of this device are all equipped with control valves known in the prior art, which will not be described in detail here.

[0026] To control the rotation of the rotating body 6, this application further includes a fixed frame 35 fixedly connected to the outer wall of the spherical shell 3, and a drive motor 36 mounted on the fixed frame 35. A drive disk 37 is fixedly connected to the shaft end of the drive motor 36. A driven disk 38, driven intermittently, is provided on the outer side of the drive disk 37. A rotating shaft 39 is fixed in the middle of the driven disk 38, and the shaft end of the rotating shaft 39 movably penetrates the spherical shell 3 and is inserted and fixedly connected to the rotating body 6. Figure 5 As shown, the drive disk 37 and the driven disk 38 form an intermittent motion mechanism known in the prior art. The specific structure will not be described in detail here. When the drive motor 36 is working, the drive disk 37 and the driven disk 38 work together to drive the rotating body 6 to rotate intermittently. This ensures that when the material port 31, the air outlet 32, the modification cavity 33, and the removal cavity 34 are connected to the inner cavity of the material tank 61, the rotating body 6 can stay for a period of time so as to purge the gas in the inner cavity of the material tank 61 and to modify and remove the wafer body 7.

[0027] In order to load and unload the wafer body 7, this application also has a box 1 provided on the outside of the spherical shell 3, and the spherical shell 3 is fixed to the lower side of the top plate of the box 1. A material hopper 11 is fixedly provided on the upper part of the box 1, and the material hopper 11 is connected to the inner cavity of the material port 31. A clamping assembly 2 is installed inside the material hopper 11. The clamping assembly 2 passes the wafer body 7 through the material port 31 and places it in the inner cavity of the material placement groove 61. The clamping assembly 2 is mainly used to clamp the wafer body 7 and load and unload the wafer body 7. Its structure is described below.

[0028] To clamp the wafer body 7, the clamping assembly 2 of this application includes a robotic arm 21. A connecting frame 22 is fixed to the lower end of the robotic arm 21. A guide frame 23 is fixedly connected to the lower side of the connecting frame 22, and the guide frame 23 is shaped like a cross. The connecting frame 22 itself is a three-dimensional structure with a gap in the middle to facilitate the subsequent placement and installation of the forward and reverse motors 27. A turntable 24 is rotatably connected to the guide frame 23 below it. Four pins are rotatably connected to the edge of the turntable 24. The connecting arms 25 are arranged in a ring array, and one end of each connecting arm 25 is provided with a clamping rod 26. The four clamping rods 26 are arranged in a ring array and clamped on the outer edge of the wafer body 7. The turntable 24 can only rotate. When the turntable 24 rotates forward, the four clamping rods 26 can be moved synchronously and brought together through the connection of the connecting arms 25, thereby clamping the wafer body 7. Conversely, when the turntable 24 rotates backward, the four clamping rods 26 can be moved synchronously and moved away, thereby releasing the wafer body 7.

[0029] To guide the movement of the clamping rod 26, this application further includes a forward and reverse motor 27 fixedly mounted on the surface of the guide frame 23, with the shaft end of the forward and reverse motor 27 fixedly connected to the middle of the turntable 24. The forward and reverse motor 27 is used to control the forward and reverse rotation of the turntable 24. A collar 251 is fixed at one end of the connecting arm 25, and the collar 251 is rotatably sleeved on the outside of the clamping rod 26. Therefore, the connecting arm 25 can rotate around the clamping rod 26, thereby preventing the clamping rod 26 from rotating when the connecting arm 25 rotates. Guide grooves 231 are provided at all four ends of the guide frame 23. A guide slider 263 is fixed at the upper end of the clamping rod 26. The guide slider 263 is slidably installed in and adapted to the inner cavity of the guide groove 231. The guide slider 263 is used to guide the movement of the clamping rod 26 and prevent the clamping rod 26 from rotating itself.

[0030] To clamp and position the wafer body 7, this application further includes limiting plates 264 fixed at both the upper and lower ends of the guide slider 263, with the two limiting plates 264 respectively abutting the upper and lower sides of the guide frame 23. The limiting plates 264 are provided to prevent the guide slider 263 from disengaging from the inner cavity of the guide frame 23, and to prevent the clamping rod 26 from tilting. A baffle 261 is fixed at the lower end of the clamping rod 26, and the baffle 261 abuts the upper surface of the wafer body 7. The baffle 261 is provided to... The wafer body 7 is positioned, and a flexible layer 262 is fixedly provided on the outer side of the lower end of the clamping rod 26. The flexible layer 262 fits the outer edge of the wafer body 7. The guide slider 263 is provided to prevent the outer edge of the wafer body 7 from being damaged. The outer wall of the boss 63 is provided with clearance grooves 631 corresponding to the four clamping rods 26. The clearance grooves 631 are mainly used for the clamping rods 26 to be inserted to ensure that the clamping assembly 2 can place the wafer body 7 at the designated position on the surface of the boss 63.

[0031] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. An atomic layer etching apparatus for chip fabrication, characterized in that: include: A spherical shell (3) is provided with a material inlet (31), an air outlet (32), a modification chamber (33), and a removal chamber (34) on its surface, and the four are arranged in a ring array around the spherical shell (3). A hollow central sphere (4) is provided at the center of the spherical shell (3). The central sphere (4) is fixedly connected to the spherical shell (3) by a fixing pipe (5). A purge pipe (41) is fixedly provided inside the central sphere (4). An exhaust port (42) is provided through the center of the central sphere (4), and the exhaust port (42) is perpendicular to the purge pipe (41). A rotating body (6) is rotatably mounted in the inner cavity of a spherical shell (3) and fits against the inner wall. A spherical cavity (601) adapted to the central sphere (4) is opened at the center of the rotating body (6), and a through hole (602) adapted to the fixed tube (5) is opened on the inner wall of the spherical cavity (601). Two symmetrically distributed material slots (61) are opened on the surface of the rotating body (6). A connecting port (62) is opened at the bottom of the material slot (61), and the connecting port (62) is connected to the spherical cavity (601). A wafer body (7) is placed in the inner cavity of the material slot (61).

2. The atomic layer etching apparatus for chip fabrication according to claim 1, characterized in that: The feed inlet (31) and the exhaust pipe (32) are respectively open at both ends of the purge pipe (41), the modification chamber (33) and the removal chamber (34) are respectively open at both ends of the exhaust port (42), and a plasma generator is provided in the inner cavity of the removal chamber (34).

3. The atomic layer etching apparatus for chip fabrication according to claim 2, characterized in that: The bottom of the material trough (61) is fixedly connected to a boss (63), and there is a gap between the outer side wall of the boss (63) and the inner side wall of the material trough (61). The bottom of the boss (63) is provided with a collection cavity (64) that communicates with the communication port (62). The inner side wall of the collection cavity (64) is provided with a vent hole (641). A magnet block (65) is fixedly embedded on the surface of the boss (63).

4. The atomic layer etching apparatus for chip fabrication according to claim 3, characterized in that: One end of the fixed tube (5) extends to the outside of the spherical shell (3). The middle part of the purge tube (41) is fixedly connected to the air supply tube (411), and the air supply tube (411) is coaxial with the fixed tube (5). One end of the air supply tube (411) extends to the outside of the opening of the fixed tube (5), and there is a gap between the air supply tube (411) and the fixed tube (5).

5. The atomic layer etching apparatus for chip fabrication according to claim 4, characterized in that: A partition (51) is fixedly installed between the fixed tube (5) and the air supply tube (411). The partition (51) divides the inner cavity of the fixed tube (5) into two spaces along the axis of the fixed tube (5). A sealing ring (52) is fixedly installed at the open end of the fixed tube (5). An exhaust pipe one (53) and an exhaust pipe two (54) are fixedly connected to the surface of the sealing ring (52), and the two are respectively connected to the two spaces inside the fixed tube (5).

6. The atomic layer etching apparatus for chip fabrication according to claim 5, characterized in that: A fixed frame (35) is fixedly connected to the outer wall of the spherical shell (3), and a drive motor (36) is installed on the fixed frame (35). A drive disk (37) is fixedly connected to the shaft end of the drive motor (36). A driven disk (38) is provided on the outer side of the drive disk (37) and rotates intermittently. A rotating shaft (39) is fixed in the middle of the driven disk (38). The shaft end of the rotating shaft (39) movably passes through the spherical shell (3) and is inserted and fixed to the rotating body (6).

7. The atomic layer etching apparatus for chip fabrication according to claim 6, characterized in that: The outer side of the spherical shell (3) is provided with a box body (1), and the spherical shell (3) is fixed to the lower side of the top plate of the box body (1). The upper part of the box body (1) is fixedly provided with a hopper (11), and the hopper (11) is connected to the inner cavity of the material port (31). The hopper (11) is equipped with a clamping assembly (2), and the clamping assembly (2) passes the wafer body (7) through the material port (31) and places it in the inner cavity of the material placement groove (61).

8. The atomic layer etching apparatus for chip fabrication according to claim 7, characterized in that: The clamping assembly (2) includes a robotic arm (21), with a connecting frame (22) fixed at the lower end of the robotic arm (21). A guide frame (23) is fixedly connected to the lower side of the connecting frame (22), and the guide frame (23) is arranged in a "+" shape. A turntable (24) is rotatably connected to the lower part of the guide frame (23). Four connecting arms (25) arranged in a circular array are rotatably connected to the edge of the turntable (24) by a pin. One end of the connecting arm (25) is provided with a clamping rod (26), and the four clamping rods (26) are arranged in a circular array and clamped on the outer edge of the wafer body (7).

9. The atomic layer etching apparatus for chip fabrication according to claim 8, characterized in that: The guide frame (23) is fixedly mounted with a forward and reverse motor (27), and the shaft end of the forward and reverse motor (27) is fixedly connected to the middle of the turntable (24). One end of the connecting arm (25) is fixed with a collar (251), and the collar (251) is rotatably sleeved on the outside of the clamping rod (26). The guide frame (23) has guide grooves (231) at all four ends. The upper end of the clamping rod (26) is fixed with a guide slider (263), and the guide slider (263) is slidably installed in the inner cavity of the guide groove (231) and adapted to it.

10. The atomic layer etching apparatus for chip fabrication according to claim 9, characterized in that: The guide slider (263) has a limit plate (264) fixed at both ends, and the two limit plates (264) are respectively attached to the upper and lower sides of the guide frame (23). The lower end of the clamping rod (26) is fixed with a baffle (261), and the baffle (261) is attached to the upper surface of the wafer body (7). The lower outer side of the clamping rod (26) is fixed with a flexible layer (262), and the flexible layer (262) is attached to the outer edge of the wafer body (7). The outer wall of the boss (63) is provided with a relief groove (631) corresponding to the four clamping rods (26).

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