Pressure control system, semiconductor process apparatus
By integrating a pressure control system with relative and absolute pressure control lines into semiconductor process equipment, the compatibility issues of high-temperature rapid film formation and high-quality film formation are solved, achieving diversified adaptability of process chambers and improving production efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
- Filing Date
- 2024-12-18
- Publication Date
- 2026-06-19
AI Technical Summary
Existing pressure control systems cannot simultaneously meet the requirements of high-temperature rapid film formation and high-quality film formation in semiconductor processes, resulting in redundant equipment, cumbersome production processes, and low efficiency.
A pressure control system was designed, which integrates relative pressure control pipelines and absolute pressure control pipelines. It can be switched according to process requirements and has the capability of relative pressure control and absolute pressure control. It includes relative pressure control valves and absolute pressure control valves, and is equipped with overpressure detectors and alarms to ensure safety and stability.
It enables diversified film-forming processes in a single process chamber, improves film-forming efficiency and uniformity, simplifies the production process, reduces the number of equipment, and improves production efficiency and adaptability.
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Figure CN122235697A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor technology, and more specifically to a pressure control system applicable to semiconductor process chambers and semiconductor process equipment including the pressure control system. Background Technology
[0002] In the field of integrated circuit manufacturing, oxidation processes are required in the process chamber during semiconductor fabrication. Oxidation is a process that uses vapor deposition to prepare thin films, such as silicon dioxide films, on the wafer surface. During the oxidation process, the pressure within the chamber needs to be controlled by a pressure control system that releases gases. However, existing pressure control systems have limited functionality, resulting in either rapid film formation with poor quality, or, while improving film uniformity, being unsuitable for high-temperature oxidation processes and exhibiting slow film formation efficiency. Summary of the Invention
[0003] In view of this, this application aims to provide a pressure control system that simultaneously possesses two pressure control pipelines. This pressure control system can meet the pressure control requirements for high-temperature rapid film formation and the stable pressure control requirements for high-quality film formation. It enables a single process chamber to implement diverse film formation processes, making it more applicable. Furthermore, it eliminates the need for wafer transportation and scheduling operations that require selecting process chambers based on specific process requirements, simplifying the production process and improving production efficiency.
[0004] This application provides a pressure control system suitable for regulating the pressure within a process chamber by venting gas. The pressure control system includes: a relative pressure control line connected to the process chamber for venting gas and maintaining the pressure difference between the process chamber and the outside atmosphere within a preset range; and an absolute pressure control line connected to the process chamber and arranged in parallel with the relative pressure control line for venting gas and maintaining the pressure within the process chamber within a preset range. The relative pressure control line and the absolute pressure control line can be switched to adapt to different process conditions.
[0005] In one possible implementation, the relative pressure control pipeline includes a first pressure control exhaust pipe and a relative pressure control valve disposed on the first pressure control exhaust pipe, and the absolute pressure control pipeline includes a second pressure control exhaust pipe and an absolute pressure control valve disposed on the second pressure control exhaust pipe. A first on / off valve is disposed on the first pressure control exhaust pipe, and a second on / off valve is disposed on the second pressure control exhaust pipe.
[0006] In one possible implementation, an overpressure exhaust line is also included, which is connected in parallel with the relative pressure control line and the absolute pressure control line, and can be opened when switching the relative pressure control line and the absolute pressure control line.
[0007] In one possible implementation, the overpressure exhaust pipeline includes a first overpressure exhaust pipe connected to the process chamber and a third on / off valve disposed on the first overpressure exhaust pipe.
[0008] In one possible implementation, the first overpressure exhaust pipe is further provided with a one-way valve, which is used to unidirectionally guide the first overpressure exhaust pipe in the direction from the inlet end connected to the process chamber to the outlet end.
[0009] In one possible implementation, the overpressure exhaust pipeline further includes a second overpressure exhaust pipe and a fourth on / off valve disposed on the second overpressure exhaust pipe. The second overpressure exhaust pipe is disposed in parallel with the first overpressure exhaust pipe so as to release pressure when the pressure in the pipeline exceeds the conduction pressure of the first overpressure exhaust pipe.
[0010] In one possible implementation, the system further includes a controller and a front-end pipeline connected to the exhaust port of the process chamber. The front-end pipeline is connected to a rear-end pipeline, which includes the relative pressure control pipeline, the absolute pressure control pipeline, and the overpressure exhaust pipeline. The pressure control system also includes an overpressure detector for detecting the pressure in the front-end pipeline and an alarm. The controller is used to activate the alarm based on the pressure detection value fed back by the overpressure detector to generate an overpressure alarm.
[0011] In one possible implementation, the controller is further configured to open the third on / off valve according to the switching signal between the relative pressure control pipeline and the absolute pressure control pipeline, and close the third on / off valve according to the safety signal after the pipeline is safely switched, so that the first overpressure exhaust pipe is in a conductive state when switching pipelines and returns to a closed state after the pipeline is safely switched.
[0012] In one possible implementation, when the pressure detected by the overpressure detector exceeds a first safety value, the controller is specifically used to activate the alarm to generate a primary overpressure alarm; wherein, the first safety value is less than the opening pressure value of the one-way valve on the first overpressure exhaust pipe.
[0013] In one possible implementation, when the pressure detected by the overpressure detector exceeds the second safety value, the controller is further configured to open the fourth on / off valve on the second overpressure exhaust pipe and activate the alarm to generate a secondary overpressure alarm.
[0014] In one possible implementation, the overpressure detection tube of the overpressure detector is connected to the pressure detection tube in the absolute pressure control line and the pressure detection tube in the relative pressure control line.
[0015] In one possible implementation, a controller is further included. When the relative pressure control line is in the conducting state, the controller is used to adjust the control target value of the relative pressure control valve on the relative pressure control line according to the state of the process chamber, and set the control target value of the relative pressure control valve to a first preset value when the process chamber is in the operating state, and set the control target value of the relative pressure control valve to a second preset value when the process chamber is in the idle state; wherein the first preset value is greater than the second preset value.
[0016] In one possible implementation, a controller is also included. When the absolute pressure control line is in the on state, the controller is configured to reduce the target pressure value of the absolute pressure control valve on the absolute pressure control line from a third preset value to a fourth preset value according to the process end signal, and reduce the valve opening of the absolute pressure control valve; and to close the absolute pressure control line and open the relative pressure control line according to the pressure target signal.
[0017] In one possible implementation, it further includes an inflation line connected to a gas source, the inflation line including a first air inlet pipe connected to a relative pressure control valve in the relative pressure control line and a second air inlet pipe connected to an absolute pressure control valve in the absolute pressure control line; wherein the first air inlet pipe and the second air inlet pipe are arranged in parallel, and a fifth on / off valve is provided on the second air inlet pipe.
[0018] In one possible implementation, the absolute pressure control valve has a first channel for exhaust and a second channel for connection to the second intake pipe within its valve block. A partial section of the first channel is provided with a Venturi tube structure to form a Venturi tube section. The second channel is connected to the first channel and the connection point is located in front of the Venturi tube section, so that gas in the second intake pipe flows into the Venturi tube section.
[0019] In one possible implementation, the front-end pipeline includes a condenser connected to the exhaust port, a gas-liquid separator connected to the condenser, and a liquid collection box connected to the gas-liquid separator; both the relative pressure control pipeline and the absolute pressure control pipeline are connected to the gas outlet of the gas-liquid separator.
[0020] This application also provides a semiconductor process apparatus, including a process chamber for performing process processing and a pressure control system connected to the process chamber, wherein the pressure control system is any of the pressure control systems described above.
[0021] The pressure control system provided in this application features switchable relative and absolute pressure control lines, enabling both high-temperature and stable pressure control. This meets the pressure control requirements for both rapid and high-quality film deposition. When applied to process chambers, a single process chamber can possess both relative and absolute pressure control capabilities. This allows the process chamber to perform not only high-temperature oxidation film deposition for rapid and efficient film formation, but also for thicker films, while maintaining stable and precise pressure control for high-uniformity and high-quality film deposition. Therefore, this pressure control system enables a single process chamber to implement diverse film deposition processes. It improves the adaptability of the pressure control system and the process chamber, conveniently meeting increasingly diverse film deposition needs. In actual production, it eliminates the need to select a specific process chamber for oxidation based on process requirements, removing wafer transport and scheduling operations, simplifying the semiconductor production process and improving manufacturing efficiency. Attached Figure Description
[0022] Figure 1 The diagram shown is a structural schematic of a pressure control system in one embodiment of this application;
[0023] Figure 2 The diagram shown is a structural schematic of the pressure control system in another embodiment of this application;
[0024] Figure 3 The diagram shown is a structural schematic of the pressure control system in another embodiment of this application;
[0025] Figure 4 The diagram shown is a structural schematic of the pressure control system in an embodiment of this application;
[0026] Figure 5 The diagram shown is a schematic representation of the internal structure of the absolute pressure control valve in an embodiment of this application.
[0027] Figures 1-5 :
[0028] 100. Process chamber; 200. Exhaust transition pipe; 300. Condenser; 400. Gas-liquid separator; 500. Main exhaust pipe; 600. First pressure-controlled exhaust pipe; 700. First on / off valve; 800. Second on / off valve; 900. Second pressure-controlled exhaust pipe; 1000. Relative pressure-controlled valve; 1100. Absolute pressure-controlled valve; 1200. Exhaust tailpipe;
[0029] 1300, Second overpressure exhaust pipe; 1400, First overpressure exhaust pipe; 1500, Third shut-off valve; 1600, Check valve; 1700, Fourth shut-off valve;
[0030] 1800, Discharge pipe; 1900, Sixth shut-off valve; 2000, Collection box; 2100, Drain tail pipe; 2200, Seventh shut-off valve; 2300, Plant drain pipe; 2400, Eighth shut-off valve; 2500, Air supply pipe;
[0031] 2600, Main intake pipe; 2700, Second intake pipe; 2800, First intake pipe; 2900, Fifth shut-off valve;
[0032] 3000, Main pressure detection tube; 3100, Second pressure detection tube; 3200, First pressure detection tube; 3300, Overpressure detection tube; 3400, Overpressure detector;
[0033] 1101. Venturi tube structure. Detailed Implementation
[0034] Embodiments of this application aim to provide a pressure control system that can be applied to semiconductor process equipment for semiconductor production (such as oxidation processes) to regulate the pressure within the process chamber where the process reaction takes place.
[0035] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0036] In the field of integrated circuit manufacturing, semiconductor fabrication refers to the transformation of wafers into semiconductor chips, involving processes such as oxidation, photolithography, etching, deposition, ion implantation, metal wiring, electrical testing, and packaging. Among these, oxidation is a process that uses vapor deposition to prepare thin films, such as silicon dioxide, on the wafer surface using an oxidizing agent. During oxidation, oxidizing agents such as oxygen or water vapor are introduced into the process chamber where the oxidation reaction takes place. The temperature within the process chamber needs to be controlled, and a pressure control system is needed to control the pressure inside the process chamber by venting exhaust gases. Different process conditions, such as varying pressure and temperature within the process chamber, will lead to different film formation results. Existing pressure control systems are structurally simple and, functionally, are typically divided into two categories: relative pressure control systems and absolute pressure control systems.
[0037] The relative pressure control system typically uses the negative pressure (approximately 800 Pa) inherent in the plant exhaust piping system (the pressure control systems of multiple process units undergoing oxidation reactions are all connected to the plant exhaust piping system, which provides common exhaust and drain pipes for all pressure control systems) as the exhaust power source to discharge gases from the process chamber. The pressure control method involves controlling the pressure difference between the pressure inside the process chamber and atmospheric pressure (referred to as differential pressure), ensuring this differential pressure remains within a certain range to maintain a stable pressure environment inside and outside the process chamber. Because this system ensures a stable pressure difference between the process chamber and the outside atmosphere, high-temperature oxidation reactions can occur within the process chamber, resulting in rapid film formation and the ability to achieve thick films. However, this pressure control method also leads to changes in the pressure inside the process chamber when the external atmospheric pressure changes. The pressure inside the process chamber equipped with this pressure control system fluctuates throughout the year, resulting in poor pressure control stability for the process chamber compared to absolute pressure control. In addition, since the relative pressure control system uses the negative pressure in the plant exhaust pipeline system as the exhaust power source, the pressure control range is small, and the pressure difference between the process chamber and atmospheric pressure is small (compared to absolute pressure control). These factors result in poor uniformity of wafer film formation and low film quality when using this pressure control system for processing.
[0038] Absolute pressure control systems utilize an external gas source to generate negative pressure for exhaust, thereby controlling the pressure within the process chamber. This pressure control method maintains the pressure within the process chamber at a target value. This system is independent of atmospheric pressure, exhibits high stability, and has a wide control range, ensuring the pressure within the process chamber remains constant. Wafers processed using this system exhibit high film uniformity and quality. However, due to the significant pressure difference between the process chamber and external atmospheric pressure under this control method, the process chamber is prone to softening, deformation, or even collapse under the combined pressure of high temperature and external pressure (relative to the internal pressure) during high-temperature reactions. Therefore, process chambers equipped with absolute pressure control systems cannot perform high-temperature oxidation reactions, have slow film formation efficiency, and are unsuitable for film formation processes involving large film thicknesses.
[0039] The oxidation process in current semiconductor manufacturing production lines requires two types of equipment with different pressure control systems to meet production demands. After completing one process step, the wafer must be transported to one type of equipment for oxidation, depending on production requirements, before being moved to the next process step. This results in a complex production line with redundant equipment, numerous transport lines, cumbersome process connections, and slow manufacturing efficiency.
[0040] Based on the above technical background, please refer to the appendix. Figures 1-5This application provides a pressure control system that can be connected to a process chamber 100. This pressure control system regulates the pressure within the process chamber 100 by discharging gas from within the chamber. The pressure control system includes a relative pressure control pipeline and an absolute pressure control pipeline, which are connected in parallel and both are connected to the exhaust port of the process chamber 100. The relative pressure control pipeline includes a first pressure control exhaust pipe 600 and a relative pressure control valve 1000 installed on the first pressure control exhaust pipe 600. The relative pressure control valve 1000 detects the pressure at a pressure sampling point (representing the pressure within the process chamber 100), and adjusts the valve opening to discharge gas based on the real-time detected actual pressure value, the difference between the external atmospheric pressure, and a preset target pressure difference. This regulates the pressure within the process chamber 100, ensuring that the pressure difference between the process chamber 100 and the external atmospheric pressure is at the target pressure difference, thus maintaining a stable internal and external pressure difference within the process chamber 100. The absolute pressure control pipeline includes a second pressure control exhaust pipe 900 and an absolute pressure control valve 1100 installed on the second pressure control exhaust pipe 900. The absolute pressure control valve 1100 detects the pressure at the pressure sampling point in real time and adjusts the valve opening to discharge gas based on the actual pressure value detected in real time and the preset target pressure value, thereby regulating the pressure in the process chamber 100 and maintaining the pressure in the process chamber 100 at the preset target pressure value. The relative pressure control pipeline and the absolute pressure control pipeline can be switched to suit different process conditions.
[0041] Therefore, depending on different process requirements and conditions, a suitable pipeline, either a relative pressure control pipeline or an absolute pressure control pipeline, can be selected to discharge gas and regulate the pressure within the process chamber 100. Thus, the pressure control system provided in this application has a switchable relative pressure control pipeline and an absolute pressure control pipeline, possessing both relative and absolute pressure control capabilities, and can meet the high-temperature pressure control requirements for rapid film formation and the stable pressure control requirements for high-quality film formation.
[0042] Applying the pressure control system provided in this application to the process chamber 100 enables a single process chamber 100 to have both relative pressure control and absolute pressure control capabilities. The process chamber 100 can switch to use any pipeline for pressure control according to specific production needs to meet different process conditions. It can not only perform high-temperature oxidation film formation treatment, rapid film formation, and improved film formation efficiency, but also perform film formation treatment with large film thickness. It can also stably and accurately control the pressure in the chamber to perform highly uniform film formation treatment, ensuring film uniformity and film quality. As can be seen, the pressure control system provided by this application enables a single process chamber 100 to implement diverse film deposition processes. This not only improves the adaptability of the pressure control system and the process chamber, conveniently meeting the increasingly diverse film deposition needs, but also eliminates the need to select a specific process chamber for oxidation based on process requirements in actual production, thus avoiding wafer transportation and scheduling operations. This simplifies the semiconductor production process, improves the convenience and speed of process connection, and increases manufacturing efficiency. At the same time, since each pressure control system can adapt to various process requirements, the number of oxidation film deposition equipment can be determined according to the production volume of a single batch, without the need for excessive setup. In contrast, in the prior art, when the production volume of a single batch remains constant, the total number of oxidation film deposition equipment required exceeds the production volume of a single batch due to the difference in the number of wafers required for the two types of processes in each batch (for example, oxidation film deposition equipment with a single pressure control function that can only adapt to a single type of process requirement needs to account for at least 60% of the production volume of a single batch). Therefore, the pressure control system provided by this application also has the beneficial effect of reducing the film deposition equipment required in the oxidation process of the manufacturing production line.
[0043] Specifically, the pressure control system includes a front-end pipeline connected to the exhaust port of the process chamber 100 and a rear-end pipeline connected to the front-end pipeline. The pressure sampling point is located in the front-end pipeline, while the relative pressure control pipeline and the absolute pressure control pipeline belong to the rear-end pipeline. The front-end pipeline may be equipped with a condenser 300, a gas-liquid separator 400, and a liquid collection box 2000 connected to the gas-liquid separator 400. For example, along the flow direction of the discharged gas, the front-end pipeline sequentially includes an exhaust transition pipe 200 connected to the exhaust port of the process chamber 100, a condenser 300 connected to the exhaust transition pipe 200, a gas-liquid separator 400 connected to the condenser 300, a liquid collection box 2000 connected to the liquid outlet of the gas-liquid separator 400, and a drain tail pipe 2100 connected to the liquid collection box 2000. The condenser 300 is used to cool the gas discharged from the process chamber 100 to protect the components on the back-end pipeline of the pressure control system from high temperature, prevent component failure, and enhance the safety performance of the pressure control system.
[0044] The condenser 300 includes a cooling chamber for gas entry and a medium chamber containing a cooling medium. The cooling chamber and the medium chamber can be arranged adjacent to each other, or the medium chamber can be wrapped around the cooling chamber. For example, the condenser 300 includes two nested chambers, with the inner chamber being the cooling chamber and the outer chamber being the medium chamber. The medium chamber is filled with a cooling medium, which effectively cools and lowers the temperature of the gas entering the cooling chamber from the process chamber 100.
[0045] The gas-liquid separator 400 is connected to the condenser 300 via a connecting pipe. Specifically, the gas-liquid separation chamber on the gas-liquid separator 400 is connected to the cooling chamber via the connecting pipe. The gas-liquid separation chamber has a liquid outlet at the bottom and a gas outlet at the top; for example, the liquid outlet is located on the bottom wall of the gas-liquid separation chamber, and the gas outlet is located on the top wall. The liquid collection box 2000 is connected to the liquid outlet via a liquid outlet pipe 1800. The rear-end piping is connected to the gas outlet of the gas-liquid separator 400; for example, both the relative pressure control piping and the absolute pressure control piping are connected to the gas outlet.
[0046] The gas discharged from process chamber 100 is first cooled by condenser 300, partially condensing into liquid. The liquid-gas mixture flowing out of condenser 300 is separated in gas-liquid separator 400. The condensate flows into collection box 2000 under gravity through connecting pipe for temporary storage and can be discharged periodically. The uncondensed gas enters the downstream pipeline and is discharged through relative pressure control pipeline or absolute pressure control pipeline. Figure 4 As shown, in order to improve the smoothness and flow speed of the condensate in the gas-liquid separator 400 to the liquid collection box 2000, the gas-liquid separator in the gas-liquid separator 400 can be set at an angle, that is, one end of the gas-liquid separator is higher and the other end is lower, and the liquid outlet is set at the lower end.
[0047] The first pressure-controlled exhaust pipe 600 of the relative pressure-controlled pipeline and the second pressure-controlled exhaust pipe 900 of the absolute pressure-controlled pipeline can be connected to the gas-liquid separator 400 respectively, or the inlet ends of the two pressure-controlled exhaust pipes can be merged and connected as a whole to the gas-liquid separator 400. For example, the rear pipeline includes an exhaust main pipe 500 connected to the outlet of the gas-liquid separator 400. Both the first pressure-controlled exhaust pipe 600 and the second pressure-controlled exhaust pipe 900 are connected to the exhaust main pipe 500.
[0048] Meanwhile, a first on / off valve 700 (an on / off valve is a valve for adjusting the on / off state of the pipeline, the same below) is installed on the first pressure-controlled exhaust pipe 600; a second on / off valve 800 is installed on the second pressure-controlled exhaust pipe 900. The exhaust ends of both the first pressure-controlled exhaust pipe 600 and the second pressure-controlled exhaust pipe 900 are connected to the exhaust tail pipe 1200, which can be the plant exhaust pipe into which all process equipment in the plant exhaust pipeline system are connected, thus simplifying the pipeline system.
[0049] The pressure detection port on the relative pressure control valve 1000 is connected to the gas-liquid separation chamber via the first pressure detection pipe 3200, and the pressure detection port on the absolute pressure control valve 1100 is connected to the gas-liquid separation chamber via the second pressure detection pipe 3100. Both pressure control valves monitor the pressure in the gas-liquid separation chamber in real time and adjust the valve opening by comparing the detected actual pressure value with the set target pressure difference or target pressure value. Thus, by using the gas-liquid separation chamber as the pressure sampling point, the pressure detection is not affected by the high temperature in the process chamber 100, and the stability and accuracy of the pressure detection are guaranteed (the pressure in the gas-liquid separation chamber is more stable than the pressure in the condenser 300 where the cooling reaction takes place), ensuring pressure control accuracy. Therefore, the gas-liquid separation block 400 is not only used to separate condensate and process exhaust, but also to provide stable pressure detection for the downstream pipelines.
[0050] In practical applications, either relative pressure control pipeline or absolute pressure control pipeline can be selected for exhaust pressure control according to different process requirements.
[0051] For example, in high-temperature rapid oxidation film formation processes with relatively low requirements for film quality, a relative pressure control pipeline can be used to control exhaust pressure and stabilize the pressure within the process chamber 100. In this case, the first on / off valve 700 on the first pressure-controlled exhaust pipe 600 needs to be opened, and the second on / off valve 800 on the second pressure-controlled exhaust pipe 900 needs to be closed, thus opening the relative pressure control pipeline. The gas discharged from the process chamber 100 is first cooled by the condenser 300. The liquid-gas mixture flowing out of the condenser 300 is separated in the gas-liquid separator 400. The condensate flows into the collection box 2000 under gravity and accumulates, while the uncondensed gas enters the relative pressure control pipeline for discharge. A target pressure difference is set on the relative pressure control valve 1000, or a target pressure value is set based on the target pressure difference. The relative pressure control valve 1000 adjusts its opening by comparing the detected actual pressure value with the preset target value, thereby regulating the exhaust volume per unit time and controlling the pressure within the process chamber 100.
[0052] When performing high-temperature or medium-high-temperature oxidation film formation processes with high requirements for film quality, an absolute pressure control pipeline can be selected for exhaust pressure control. In this case, the second on / off valve 800 on the second pressure control exhaust pipe 900 needs to be opened, and the first on / off valve 700 on the first pressure control exhaust pipe 600 needs to be closed, so that the absolute pressure control pipeline is in the open state and the relative pressure control pipeline is in the closed state. A target pressure value is set on the absolute pressure control valve 1100. The absolute pressure control valve 1100 compares the detected actual pressure value with the preset target pressure value to adjust the valve opening and regulate the exhaust volume per unit time, thereby controlling the pressure within the process chamber 100.
[0053] Because two pressure control lines are integrated on the same process equipment or a single process chamber 100, and the two pressure control lines need to be frequently switched, the usage frequency of the first on / off valve 700 and the second on / off valve 800 increases significantly. Furthermore, considering that process byproducts may adhere to the inside of the on / off valves after prolonged use, there is a risk that the first on / off valve 700 and the second on / off valve 800 may fail and cannot open normally. Therefore, in the embodiments of this application, the pressure control system is also provided with an overpressure exhaust line, and / or with an overpressure detector 3400 and an alarm, for overpressure prevention and control.
[0054] The overpressure detector 3400 is used to detect whether the pressure in the upstream pipeline is excessive. Specifically, it can be connected to the gas-liquid separation chamber of the gas-liquid separator 400 through the overpressure detection tube 3300 to monitor the pressure sampling point in real time. The overpressure detector 3400 is electrically connected to the pressure control system or the controller of the process equipment, and provides real-time feedback of the detection value to the controller. When the detection value exceeds the preset safety pressure value in the controller, the controller activates an alarm that can flash and / or sound a siren. In this way, when an overpressure occurs, the controller will promptly activate the alarm, allowing personnel to quickly take appropriate action and prevent safety accidents.
[0055] The overpressure detector 3400 can specifically be a differential pressure gauge with a large pressure measurement range.
[0056] The overpressure exhaust pipeline is connected in parallel with the relative pressure control pipeline and the absolute pressure control pipeline, and can be opened when switching between the relative pressure control pipeline and the absolute pressure control pipeline. In this way, the safety hazard of excessive pressure in the pipeline can be prevented due to the failure of the first shut-off valve 700 and the second shut-off valve 800 and the inability of the pressure control exhaust pipeline to open normally.
[0057] Specifically, the overpressure exhaust pipeline includes a first overpressure exhaust pipe 1400 and a third shut-off valve 1500 installed on the first overpressure exhaust pipe 1400. The first overpressure exhaust pipe 1400 is connected in parallel with the first pressure-controlled exhaust pipe 600 and the second pressure-controlled exhaust pipe 900. For example, the inlet ends of all three are connected to the exhaust main pipe 500, and the exhaust ends are all connected to the exhaust tail pipe 1200. When switching between the relative pressure-controlled pipeline and the absolute pressure-controlled pipeline, if the shut-off valve fails and the pressure in the pipeline exceeds the limit, the third shut-off valve 1500 is opened, and the pressure is released through the first overpressure exhaust pipe 1400 to prevent safety risks such as explosion due to excessive pressure in the pipeline.
[0058] Alternatively, each time the pressure control pipeline needs to be switched, the third shut-off valve 1500 is opened, keeping the first overpressure exhaust pipe 1400 open. Once the pressure control pipeline has been switched normally, and if there are no failures or overpressure issues, the third shut-off valve 1500 is then closed. However, in this method, because the first overpressure exhaust pipe 1400 remains open during the switching process, if the first shut-off valve 700 or the second shut-off valve 800 opens normally and there are no failures, the pressure at the exhaust end of the first overpressure exhaust pipe 1400 will be lower than the pressure in the gas-liquid separation chamber. Therefore, the gas discharged into the exhaust tailpipe 1200 may backflow into the front-end pipeline through the first overpressure exhaust pipe 1400. Therefore, in a further embodiment, the first overpressure exhaust pipe 1400 is also equipped with a one-way valve 1600, which unidirectionally guides the first overpressure exhaust pipe 1400 in the normal exhaust direction (the direction from the intake to the exhaust end of the first overpressure exhaust pipe 1400). This design prevents gas from flowing back into the front-end pipeline, allowing the third shut-off valve 1500 and the first overpressure vent pipe 1400 to be opened for pressure relief protection whenever the pressure control pipeline needs to be switched, without having to wait for the shut-off valve to fail and the pressure in the pipeline to increase significantly before taking action. This prevents large pressure fluctuations in the process chamber 100 from affecting the film formation quality and provides better stability to the pressure in the process chamber 100.
[0059] When switching between relative and absolute pressure control lines, both the switching operation and the opening of the overpressure line can be performed manually. Of course, preferably, they can be operated by a controller. For example, the pressure control system also includes a controller (in an embodiment with an overpressure line and an overpressure detector, the controller can be a controller that is communicatively connected to the overpressure detector). The controller is used to open the third on / off valve 1500 according to the switching signal between the relative and absolute pressure control lines, and to close the third on / off valve 1500 according to the safety signal after the safe switching of the lines, so that the first overpressure vent pipe 1400 is in a conductive state when switching lines and returns to a closed state after the safe switching of lines.
[0060] Specifically, the switching signal between the relative pressure control line and the absolute pressure control line can be a signal indicating the end of the process at process chamber 100 (e.g., the end signal of the last operation in the process processing within process chamber 100).
[0061] Safety signals include signals that the pressure detected by the overpressure detector 3400 is less than the preset safety pressure value and remains so for a preset duration; or signals that the first on / off valve 700 on the relative pressure control line and the second on / off valve 800 on the absolute pressure control line have both completed the switching between open and closed states; or signals that the relative pressure control valve 1000 or the absolute pressure control valve 1100 has started and is working normally.
[0062] Furthermore, to prevent the third shut-off valve 1500 or the one-way valve 1600 from failing when pressure relief is needed or from slow pressure relief due to special circumstances, in some embodiments, the overpressure exhaust pipeline also includes a second overpressure exhaust pipe 1300 and a fourth shut-off valve 1700 disposed on the second overpressure exhaust pipe 1300. The second overpressure exhaust pipe 1300 is arranged in parallel with the first overpressure exhaust pipe 1400, such that the inlet end of the second overpressure exhaust pipe 1300 is connected to the exhaust main pipe 500 and the exhaust end is connected to the exhaust tail pipe 1200. When the first overpressure exhaust pipe 1400 only has the third shut-off valve 1500 and no one-way valve 1600, the second overpressure exhaust pipe 1300 can exhaust pressure and relieve pressure when the third shut-off valve 1500 fails and cannot open normally.
[0063] When the first overpressure exhaust pipe 1400 is equipped with a third shut-off valve 1500 and a check valve 1600, if either the third shut-off valve 1500 or the check valve 1600 fails, pressure can be released through the second overpressure exhaust pipe 1300. If the controller receives (or analyzes) a signal that the third shut-off valve 1500 is not properly opened or that the pressure in the upstream pipeline is greater than the conduction pressure of the first overpressure exhaust pipe 1400, it can promptly open the fourth shut-off valve 1700, releasing pressure through the second overpressure exhaust pipe 1300.
[0064] The design of two overpressure vent pipes provides double protection against the risk of failure of the entire pressure control system and overpressure in the chamber. In the event of failure of either the relative pressure control line or the absolute pressure control line, the pressure control system can still release pressure and improve the safety of the pressure control system.
[0065] In a preferred embodiment, the pressure control system is equipped with both an overpressure detector 3400 and an overpressure venting pipeline. Thus, when determining whether the first on-off valve 700 and the second on-off valve 800 have failed, the overpressure detector 3400 can be used for detection without the need for other sensors (such as limit switches or Hall effect sensors to detect whether the valve plugs of the on-off valves have opened or closed). Furthermore, by detecting the pressure, the determination of whether an overpressure problem has occurred is more accurate, resulting in higher safety control performance of the pipeline in terms of overpressure.
[0066] For example, taking a scheme with two overpressure exhaust pipes and a one-way valve 1600 as an example, an optimal scheme setting is described. For instance, the controller is also used to open the third on-off valve 1500 according to the switching signal between the relative pressure control pipeline and the absolute pressure control pipeline, and to close the third on-off valve 1500 according to the safety signal after the pipeline safety switch, so that the first overpressure exhaust pipe 1400 is in a conductive state when switching pipelines and returns to a closed state after the pipeline safety switch; that is, when switching between the relative pressure control pipeline and the absolute pressure control pipeline, the controller is used to open the third on-off valve 1500 to put the first overpressure exhaust pipe 1400 in an open state, and to detect the pressure in the front-end pipeline (specifically, in the gas-liquid separator 400) through the overpressure detector 3400; if the pressure is within the preset detection range... If, within a specified time period (e.g., timing begins from the start of the pressure control pipeline switching operation) or from the start of the overpressure pipe venting until the controller receives the pipeline safety switching signal (e.g., the signal that both the first on / off valve 700 and the second on / off valve 800 have completed the opening / closing state switching, or the information that the pressure control valve is working normally: the pressure control valve can provide feedback to the controller after it is normally open and working), the pressure detected by the overpressure detector 3400 is always lower than the preset safety pressure value, indicating that the relative pressure control pipeline and the absolute pressure control pipeline are normally open or closed, then the controller is used to close the third on / off valve 1500 and close the first overpressure venting pipe 1400 according to the pipeline safety switching signal.
[0067] In some embodiments, when the pressure detected by the overpressure detector 3400 exceeds a first safety value, the controller is specifically used to activate an alarm to generate a primary overpressure alarm; wherein, the first safety value is less than the conduction pressure of the one-way valve 1600 on the first overpressure exhaust pipe 1400. That is, if the first on / off valve 700 or the second on / off valve 800 fails, and the pressure detected by the overpressure detector 3400 exceeds the first safety value (the first safety value may be greater than the target pressure of the pressure control valve but less than the conduction pressure of the one-way valve 1600), the controller activates the primary overpressure alarm.
[0068] Furthermore, this embodiment can be combined with the scheme of setting a first overpressure exhaust pipe 1400. For example, when switching pipelines, the controller opens the first overpressure exhaust pipe 1400. When an overpressure phenomenon actually occurs, the controller, in conjunction with the detection of the overpressure detector 3400, promptly activates the primary overpressure alarm. Then, the gas in the pipeline continues to increase and the pressure continues to increase. When the pressure reaches the conduction pressure of the one-way valve 1600 (referring to the pressure that can open the one-way valve 1600), the one-way valve 1600 can be opened, and the pressure can be released through the first overpressure exhaust pipe 1400.
[0069] Furthermore, when the pressure detected by the overpressure detector 3400 exceeds the second safety value, the controller also opens the fourth shut-off valve 1700 on the second overpressure vent pipe 1300 and activates the alarm to generate a secondary overpressure alarm. After the primary overpressure alarm, if the pressure detected by the overpressure detector 3400 exceeds the second safety value, and the second safety value is greater than the conduction pressure of the check valve 1600 (i.e., the conduction pressure of the first overpressure vent pipe 1400), it indicates that the check valve 1600 has failed and has not opened successfully. In this case, the controller opens the fourth shut-off valve 1700 to release pressure through the second overpressure vent pipe 1300 and activates the secondary overpressure alarm.
[0070] When the process is completed and the equipment is idle, in order to avoid excessive pressure difference between the inside and outside of the process chamber 100, process gas can continue to be introduced into the process chamber 100. At the same time, the process chamber 100 can be vented for pressure control in the idle state using a relative pressure control pipeline (referred to as idle pressure control in this application) to keep the internal and external pressure environment of the process chamber 100 stable.
[0071] Therefore, after a process using relative pressure control piping is completed, if a new process is required and absolute pressure control piping is needed, the process can be directly switched to using absolute pressure control piping for venting and pressure control. If the equipment needs to be returned to an idle state, relative pressure control piping can be used to control the pressure in the idle process chamber 100. Specifically, depending on the situation, the target pressure difference controlled by the relative pressure control valve 1000 can be reduced, the valve opening can be decreased, and venting can be performed slowly to make the pressure inside the process chamber 100 close to or equal to the external atmospheric pressure.
[0072] Therefore, in some embodiments of this application, the following scheme is also included: when the relative pressure control pipeline is in the conducting state, the controller is used to adjust the control target value of the relative pressure control valve 1000 on the relative pressure control pipeline according to the state of the process chamber 100, and when the process chamber 100 is in the operating state, the control target value of the relative pressure control valve 1000 is set to a first preset value, and when the process chamber 100 is in the idle state, the control target value of the relative pressure control valve 1000 is set to a second preset value; wherein, the first preset value is greater than the second preset value. In this way, safe pressure control of the idle process chamber 100 is achieved, avoiding excessive pressure difference between the inside and outside of the process chamber 100, which could lead to deformation of the process chamber 100, and also avoiding the need to spend a long time adjusting the pressure when starting a new process.
[0073] After the process using the absolute pressure control pipeline is completed, the pressure difference between the process chamber 100 and atmospheric pressure is significant, resulting in a pressure difference exceeding the control range of the relative pressure control valve 1000. Directly switching to the relative pressure control pipeline would affect the control accuracy of the relative pressure control valve 1000. Therefore, to address this issue, this application provides several embodiments: with the absolute pressure control pipeline in the on-state, the controller also uses a process completion signal to reduce the target pressure value of the absolute pressure control valve 1100 on the absolute pressure control pipeline from a third preset value to a fourth preset value, and reduces the valve opening of the absolute pressure control valve 1100; and the controller closes the absolute pressure control pipeline and opens the relative pressure control pipeline based on the pressure target achievement signal.
[0074] The process end signal can be generated at the process chamber 100, for example, the end signal of the last operation in the process processing in the process chamber 100, or it can be obtained through pressure detection. When the process ends, the air intake in the process chamber 100 will be significantly reduced, and the pressure in the chamber and the exhaust pipe will decrease.
[0075] Thus, before switching from the absolute pressure control line to the relative pressure control line, the target pressure value controlled by the absolute pressure control valve 1100 is adjusted to be close to the external atmospheric pressure, reducing the difference between the target pressure value and the external atmospheric pressure, and decreasing the valve opening and exhaust speed. Once the actual pressure in the process chamber 100 (actually the actual pressure in the gas-liquid separator 400) is detected to be close to the target pressure value and maintained for a preset time, it indicates that the difference between the actual pressure and atmospheric pressure has stabilized within the range of the relative pressure control valve 1000. At this point, the absolute pressure control line can be closed and the relative pressure control line opened for new process pressure control or idle pressure control. The preset time can be determined based on the response time of the relative pressure control valve 1000, for example, it can be set to three times the response time of the relative pressure control valve 1000. This ensures a safe switch from the absolute pressure control line to the relative pressure control line while avoiding affecting the control accuracy of the relative pressure control line.
[0076] The exhaust power source for the relative pressure control valve 1000 is the negative pressure in the plant exhaust pipeline system, which can generate negative pressure without the use of an additional air source. In contrast, the absolute pressure control valve 1100 generates exhaust power by producing negative pressure through an additional air source. Therefore, as... Figure 4 As shown in this application, the pressure control system further includes an inflation pipeline connected to a gas source and supplying gas. The inflation pipeline includes a first inlet pipe 2800 connected to a relative pressure control valve 1000 and a second inlet pipe 2700 connected to an absolute pressure control valve 1100, to respectively supply gas to the absolute pressure control valve 1100 and the relative pressure control valve 1000. Furthermore, the gas flow rate in the first inlet pipe 2800 is less than the gas flow rate in the second inlet pipe 2700.
[0077] The gas can be nitrogen; this article uses nitrogen as an example. The nitrogen introduced into the absolute pressure control valve 1100 is mainly used to provide the negative pressure required for venting the valve block. For example... Figure 5 As shown, the absolute pressure control valve 1100, in addition to having an inlet valve connected to the second pressure control exhaust pipe 900 and an exhaust valve connected to the exhaust tail pipe 1200, also has a power valve for nitrogen to enter. Inside the valve block, there is a first channel connecting the inlet valve and the exhaust valve, and a second channel connecting the power valve and the first channel. A Venturi tube structure 1101 (the specific structure is not shown in the attached figure, only its location is marked) is provided at the end of the first channel, and the second channel is connected to the second inlet pipe 2700. Thus, after nitrogen is introduced, a negative pressure is generated inside the valve block through the Venturi tube structure 1101. Simultaneously, a pressure regulating valve or a flow regulating valve is provided on the second channel, thereby regulating this negative pressure to be lower than the pressure inside the process chamber 100, providing exhaust power for the absolute pressure control valve 1100. When the second on / off valve 800 is opened, the absolute pressure control pipeline can discharge the gas in the front-end pipeline.
[0078] The relative pressure control valve 1000 also has two gas channels within its valve block to allow nitrogen gas introduced into the valve block to be discharged through the exhaust valve port. The valve block also includes a throttle valve to regulate the nitrogen flow rate, but no venturi tube structure is provided. Introducing a small amount of nitrogen gas into the relative pressure control valve 1000 serves two purposes: firstly, it purges the gas channels inside the valve block, preventing process byproducts from adhering to them; secondly, it allows the nitrogen gas to flow through the pressure detection port of the relative pressure control valve 1000 into the first pressure detection tube 3200, preventing corrosive gases from the process exhaust from diffusing into the first pressure detection tube 3200 and ultimately into the relative pressure control valve 1000, thus preventing corrosion of the pressure detection components, due to a small control pressure differential during the relative pressure control process.
[0079] Based on this consideration, the first pressure detection tube 3200 and the second pressure detection tube 3100 can be connected, and the overpressure detection tube 3300 connecting the overpressure detector 3400 and the gas-liquid separator 400 can also be connected to the first pressure detection tube 3200 and the second pressure detection tube 3100. Preferably, the air inlet ends of the three tubes—the first pressure detection tube 3200, the second pressure detection tube 3100, and the overpressure detection tube 3300—are all connected to the main detection tube 3000, which in turn is connected to the gas-liquid separator 400. This not only simplifies the piping structure but also avoids damage to the pressure detection components in the overpressure detector 3400 and the absolute pressure control valve 1100 caused by corrosive gases diffused from the process exhaust.
[0080] The first intake pipe 2800 and the second intake pipe 2700 are connected in parallel, and their intake ends are both connected to the main intake pipe 2600, which is connected to the air source. At the same time, a fifth shut-off valve 2900 is provided on the second intake pipe 2700. Thus, when the absolute pressure control pipeline is not used for pressure control, the fifth shut-off valve 2900 is closed to prevent a large amount of nitrogen from flowing into the exhaust tailpipe 1200 and affecting the pressure control of the relative pressure control valve 1000. The amount of nitrogen flowing into the relative pressure control valve 1000 is extremely small and will not affect the pressure control of the absolute pressure control valve 1100. Therefore, a shut-off valve is not required on the first intake pipe 2800.
[0081] After the oxidation process is completed, the liquid collection box 2000 needs to be drained periodically. Therefore, the liquid collection box 2000 is connected to a drain tail pipe 2100. The drain tail pipe 2100 can be the plant drain pipe 2300 in the plant exhaust pipeline system, or the drain tail pipe 2100 can be connected to the plant drain pipe 2300.
[0082] Meanwhile, a sixth shut-off valve 1900 is installed on the outlet pipe 1800, and a seventh shut-off valve 2200 is installed on the drain tail pipe 2100. When processing is being carried out in the process chamber 100, the sixth shut-off valve 1900 is in the open state, and the seventh shut-off valve 2200 is in the closed state. The collection box 2000 accumulates condensate but does not discharge it externally to avoid affecting the pressure environment in the pipeline. When the process equipment is idle, the condensate is discharged. When the collection box 2000 discharges condensate, the sixth shut-off valve 1900 is closed and the seventh shut-off valve 2200 is open to prevent the pressure at the discharge end of the drain tail pipe 2100 from exceeding the pressure inside the gas-liquid separator 400, which could cause liquid backflow.
[0083] Similarly, to prevent the liquid in the collection box 2000 from failing to drain properly due to the external pressure being greater than the internal pressure during drainage, in the embodiments of this application, the pressure control system is also provided with a gas supply pipe 2500 for filling the collection box 2000 with gas, so as to increase the pressure inside the collection box 2000 during drainage and ensure smooth drainage.
[0084] In a preferred embodiment, the air supply pipe 2500 includes an air supply pipe 2500 connected at one end to the exhaust tailpipe 1200 and at the other end to the liquid collection box 2000, and an eighth on / off valve 2400 disposed on the air supply pipe 2500. Thus, no additional air source is required; the liquid collection box 2000 can be pressurized directly using the gas discharged from the process chamber 100, simplifying the piping system.
[0085] The embodiments of this application also provide a semiconductor process apparatus, which includes a process chamber 100 for performing process processing and a pressure control system as described in the above embodiments. The semiconductor process apparatus has the beneficial effects described in the above embodiments, which will not be repeated here.
[0086] The above embodiments illustrate the structural composition of a pressure control system, which possesses various possible control logics and usage methods. Therefore, embodiments of this application also provide a pressure control venting method applicable to the above-described pressure control system. This venting method includes the following:
[0087] Use relative pressure control lines or pressure control lines to vent and control pressure;
[0088] When switching between relative pressure control pipeline and absolute pressure control pipeline, open the third shut-off valve 1500 to keep the first overpressure exhaust pipe 1400 open (or in other words, keep it in a conductive state).
[0089] In this way, whenever the pressure control pipeline needs to be switched, the third shut-off valve 1500 and the first overpressure exhaust pipe 1400 are opened for pressure relief protection, instead of waiting for the shut-off valve to fail and the pressure in the pipeline to increase significantly before taking action. This can better stabilize the pressure in the process chamber 100.
[0090] Furthermore, the venting method also includes: when switching between relative pressure control pipeline and absolute pressure control pipeline, detecting the pressure of the front-end pipeline connected to the vent port of process chamber 100 by overpressure detector 3400;
[0091] If the detected pressure is consistently lower than the preset safe pressure value, the relative pressure control pipeline and the absolute pressure control pipeline will be opened or closed normally, and the first overpressure exhaust pipe 1400 will be shut off.
[0092] If the detected pressure exceeds the first safety value, a primary overpressure alarm is sent, and the pressure is released through the first overpressure vent pipe 1400; wherein, the first safety value is less than the conduction pressure value of the first overpressure vent pipe 1400.
[0093] That is, when determining whether the first on / off valve 700 and the second on / off valve 800 have failed, the overpressure detector 3400 is used for detection. In this way, there is no need to set other sensors (such as limit switches or Hall sensors) to detect whether the valve plug of the on / off valve has produced an opening and closing stroke. Moreover, the overpressure problem is determined by detecting the pressure, which makes the detection more accurate and improves the safety control performance of the pressure control system.
[0094] In a further embodiment, the venting method further includes: when the pressure detected by the overpressure detector 3400 exceeds the second safety value, opening the on / off valve on the second overpressure venting pipe 1300, venting and relieving pressure through the second overpressure venting pipe 1300 and activating the secondary overpressure alarm; wherein the second safety value is greater than the conduction pressure value of the first overpressure venting pipe 1400.
[0095] For example, when switching between the relative pressure control line and the absolute pressure control line, the third on / off valve 1500 is opened to activate the first overpressure exhaust pipe 1400, and the pressure in the front-end pipeline, specifically in the gas-liquid separator 400, is detected by the overpressure detector 3400. If, within the preset detection time (e.g., starting from the beginning of the pressure control line switching operation) or before receiving information that the pressure control valve is operating normally (after the pressure control valve is normally open and working, feedback information can be given to the controller), the detected pressure is consistently lower than the preset safety pressure value, and the relative pressure control line and the absolute pressure control line are normally open or closed, then the third on / off valve 1500 can be closed, and the first overpressure exhaust pipe 1400 can be shut off. If either the first shut-off valve 700 or the second shut-off valve 800 fails, and the pressure detected by the overpressure detector 3400 exceeds the first safety value, the controller activates a primary overpressure alarm. Gas and pressure continuously increase in the pipeline. Once the pressure reaches the opening pressure of the check valve 1600, it opens, releasing pressure through the first overpressure vent pipe 1400. If the pressure detected by the overpressure detector 3400 exceeds the second safety value, which is greater than the opening pressure of the check valve 1600 (i.e., the opening pressure of the first overpressure vent pipe 1400), the fourth shut-off valve 1700 opens, releasing pressure through the second overpressure vent pipe 1300 and activating a secondary overpressure alarm. This venting method offers high safety protection.
[0096] When the process is completed and the equipment is idle, in order to avoid pressure difference between the inside and outside of the process chamber 100, the process chamber 100 can be vented and pressure controlled in the idle state using a relative pressure control pipeline (referred to as idle pressure control in this application) to keep the internal and external pressure environment of the process chamber 100 stable.
[0097] Therefore, after a process using relative pressure control piping is completed, if a new process is required that necessitates the use of absolute pressure control piping, the system can be directly switched to use absolute pressure control piping for venting and pressure control. If the equipment needs to be returned to an idle state, the target pressure differential controlled by relative pressure control valve 1000 can be reduced, and the valve opening decreased to allow for slow venting, bringing the pressure inside process chamber 100 close to or equal to the external atmospheric pressure.
[0098] Therefore, the exhaust method provided in this application also includes the following:
[0099] When exhaust pressure control is performed using a relative pressure control line and the process is completed, switch to exhaust pressure control using an absolute pressure control line for a new process, or continue to use a relative pressure control line to perform idle pressure control on the idle process chamber 100.
[0100] The use of relative pressure control lines to perform idle pressure control on the idle process chamber 100 includes the following:
[0101] Reduce the target pressure difference controlled by the relative pressure control valve 1000 and reduce its valve opening so that the pressure in the process chamber 100 is close to or equal to the external atmospheric pressure.
[0102] After the process using the absolute pressure control line is completed, the pressure in the process chamber 100 differs significantly from atmospheric pressure, resulting in a pressure difference exceeding the control range of the relative pressure control valve 1000. Directly switching to the relative pressure control line would affect the control accuracy of the relative pressure control valve 1000. Therefore, in the exhaust method provided in this application, before switching from the absolute pressure control line to the relative pressure control line, the target pressure value controlled by the absolute pressure control valve 1100 is adjusted to be close to the external atmospheric pressure, reducing the difference between the target pressure value and the external atmospheric pressure, and decreasing the valve opening to lower the exhaust speed. Once the actual pressure in the process chamber 100 (actually the actual pressure in the gas-liquid separator 400) is detected to be close to the target pressure value and maintained for a preset time, it indicates that the difference between the actual pressure and atmospheric pressure has stabilized within the range of the relative pressure control valve 1000. At this point, the absolute pressure control line can be closed, and the relative pressure control line can be opened for new process pressure control or idle pressure control. The preset duration can be determined based on the response time of the relative pressure control valve 1000, for example, it can be set to three times the response time of the relative pressure control valve 1000.
[0103] Therefore, the exhaust method provided in this application also includes the following:
[0104] When using the absolute pressure control pipeline for exhaust pressure control and the process is finished, adjust the target pressure value of the absolute pressure control valve 1100 to reduce the difference between the target pressure value and the external atmospheric pressure, and reduce the valve opening; after the actual pressure detected by the absolute pressure control valve 1100 reaches the target pressure value and is maintained for a preset time, close the absolute pressure control pipeline and open the relative pressure control pipeline to perform new process pressure control or idle pressure control through the relative pressure control pipeline.
[0105] In this way, after the pressure in the process chamber 100 is reduced to the pressure control range of the pressure control valve 1000, the pipeline switching can be carried out, which can ensure the accuracy of subsequent pressure control and pipeline safety.
[0106] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.
[0107] The components and devices described in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the accompanying drawings. As those skilled in the art will recognize, these components and devices can be connected, arranged, and configured in any manner. Words such as “comprising,” “including,” “having,” etc., are open-ended terms meaning “including but not limited to,” and are used interchangeably with them. The terms “or” and “and” as used herein refer to the words “and / or,” and are used interchangeably with them unless the context clearly indicates otherwise. The term “such as” as used herein refers to the phrase “such as but not limited to,” and is used interchangeably with it.
[0108] It should also be noted that in the apparatus and equipment of this application, the components can be disassembled and / or reassembled. These disassemblies and / or reassemblies should be considered as equivalent solutions of this application.
[0109] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.
[0110] The above description has been given for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.
[0111] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications or equivalent substitutions made within the spirit and principles of this application should be included within the protection scope of this application.
Claims
1. A pressure control system, characterized in that, Suitable for regulating the pressure within a process chamber by venting air from the process chamber, including: A relative pressure control pipeline is connected to the process chamber and is used to discharge gas and keep the pressure difference between the process chamber and the outside atmosphere within a preset range. An absolute pressure control line is connected to the process chamber and arranged in parallel with the relative pressure control line, used to discharge gas and keep the pressure in the process chamber within a preset range; The relative pressure control pipeline and the absolute pressure control pipeline are switched on and off to suit different process conditions.
2. The pressure control system as described in claim 1, characterized in that, The relative pressure control pipeline includes a first pressure control exhaust pipe and a relative pressure control valve disposed on the first pressure control exhaust pipe; the absolute pressure control pipeline includes a second pressure control exhaust pipe and an absolute pressure control valve disposed on the second pressure control exhaust pipe. The first pressure-controlled exhaust pipe is equipped with a first on / off valve, and the second pressure-controlled exhaust pipe is equipped with a second on / off valve.
3. The pressure control system as described in claim 1, characterized in that, It also includes an overpressure exhaust pipeline, which is connected in parallel with the relative pressure control pipeline and the absolute pressure control pipeline, and can be opened when switching the relative pressure control pipeline and the absolute pressure control pipeline.
4. The pressure control system as described in claim 3, characterized in that, The overpressure exhaust pipeline includes a first overpressure exhaust pipe connected to the process chamber and a third on / off valve installed on the first overpressure exhaust pipe.
5. The pressure control system as described in claim 4, characterized in that, The first overpressure exhaust pipe is also provided with a one-way valve, which is used to unidirectionally guide the first overpressure exhaust pipe from the inlet end connected to the process chamber to the outlet end.
6. The pressure control system as described in claim 5, characterized in that, The overpressure exhaust pipeline also includes a second overpressure exhaust pipe and a fourth on / off valve installed on the second overpressure exhaust pipe. The second overpressure exhaust pipe is connected in parallel with the first overpressure exhaust pipe so that it can exhaust and release pressure when the pressure in the pipeline exceeds the conduction pressure of the first overpressure exhaust pipe.
7. The pressure control system according to any one of claims 1-6, characterized in that, It also includes a controller and a front-end pipeline connected to the exhaust port of the process chamber, the front-end pipeline being connected to a rear-end pipeline, the rear-end pipeline including the relative pressure control pipeline, the absolute pressure control pipeline and the overpressure exhaust pipeline; Furthermore, the pressure control system also includes an overpressure detector for detecting the pressure in the front-end pipeline and an alarm. The controller is used to activate the alarm based on the pressure detection value fed back by the overpressure detector to generate an overpressure alarm.
8. The pressure control system as described in claim 7, characterized in that, The controller is also used to open the third on / off valve according to the switching signal of the relative pressure control pipeline and the absolute pressure control pipeline, and close the third on / off valve according to the safety signal after the pipeline is safely switched, so that the first overpressure exhaust pipe is in a conductive state when switching pipelines and returns to the closed state after the pipeline is safely switched.
9. The pressure control system as described in claim 7, characterized in that, When the pressure detected by the overpressure detector exceeds a first safety value, the controller is specifically used to activate the alarm to generate a primary overpressure alarm; wherein, the first safety value is less than the conduction pressure value of the one-way valve on the first overpressure exhaust pipe.
10. The pressure control system as described in claim 9, characterized in that, When the pressure detected by the overpressure detector exceeds the second safety value, the controller is also used to open the fourth shut-off valve on the second overpressure exhaust pipe and activate the alarm to generate a second-level overpressure alarm.
11. The pressure control system as described in claim 7, characterized in that, The overpressure detection tube of the overpressure detector is connected to the pressure detection tube in the absolute pressure control line and the pressure detection tube in the relative pressure control line.
12. The pressure control system as described in claim 1, characterized in that, It also includes a controller, which is used to adjust the control target value of the relative pressure control valve on the relative pressure control pipeline according to the state of the process chamber when the relative pressure control pipeline is in the conducting state, and to set the control target value of the relative pressure control valve to a first preset value when the process chamber is in the operating state, and to set the control target value of the relative pressure control valve to a second preset value when the process chamber is in the idle state; wherein, the first preset value is greater than the second preset value.
13. The pressure control system as described in claim 1, characterized in that, It also includes a controller, which, when the absolute pressure control pipeline is in the on state, is used to reduce the target pressure value of the absolute pressure control valve on the absolute pressure control pipeline from a third preset value to a fourth preset value according to the process end signal, and reduce the valve opening of the absolute pressure control valve; and to close the absolute pressure control pipeline and open the relative pressure control pipeline according to the pressure target signal.
14. The pressure control system as described in claim 1, characterized in that, It also includes an inflation line connected to a gas source, the inflation line including a first air inlet pipe connected to a relative pressure control valve in the relative pressure control line and a second air inlet pipe connected to an absolute pressure control valve in the absolute pressure control line; The first intake pipe and the second intake pipe are connected in parallel, and the second intake pipe is equipped with a fifth on / off valve.
15. The pressure control system as described in claim 14, characterized in that, The absolute pressure control valve has a first channel for exhaust and a second channel for connecting to the second intake pipe. A partial section of the first channel is provided with a Venturi tube structure to form a Venturi tube section. The second channel is connected to the first channel and the connection point is located in front of the Venturi tube section so that the gas in the second intake pipe flows through the Venturi tube section.
16. The pressure control system as described in claim 7, characterized in that, The front-end pipeline includes a condenser connected to the exhaust port, a gas-liquid separator connected to the condenser, and a liquid collection box connected to the gas-liquid separator; both the relative pressure control pipeline and the absolute pressure control pipeline are connected to the gas-liquid separator.
17. A semiconductor process apparatus, characterized in that, It includes a process chamber and a pressure control system connected to the process chamber, wherein the pressure control system is the pressure control system as described in any one of claims 1-16.