High power intelligent high-side load switch circuit and electronic load switch

Abstract

This invention provides a high-power intelligent high-side load switching circuit and electronic load switch, belonging to the field of switching. It includes a main control unit (MCU), a power supply unit, a CAN communication module, and multiple high-side load switching circuit units. The power supply terminal of the MCU is connected to the power supply unit. The first input terminal of each high-side load switching circuit unit is connected to the MCU_IO terminal of the MCU, and the second input terminal of each high-side load switching circuit unit is connected to the MCU_ADC terminal of the MCU. The output terminal of each high-side load switching circuit unit is connected to a load. The MCU_IO terminal of the MCU is used to output switching control signals to each high-side load switching circuit unit, and the MCU_ADC terminal of the MCU is used to collect current feedback signals from each high-side load switching circuit unit. The power supply unit supplies power to the main control unit and each high-side load switching circuit unit. This design can quickly detect abnormal changes in load current, effectively reducing the risk of load damage.

Description

Technical Field

[0001] This invention relates to the field of switch technology, and more particularly to a high-power intelligent high-side load switch circuit, and also to an electronic load switch. Background Technology

[0002] In fields such as industrial control, new energy, and automotive electronics, the on / off control and intelligent management of high-power loads are core technologies. This requirement typically necessitates driving multiple differentiated loads simultaneously, and demands high levels of power supply stability, safety, and fault response speed. High-side load switches, compared to low-side switches, are better suited for high-power load control scenarios due to their advantages such as direct grounding of the low-voltage side of the load, outstanding short-circuit protection capabilities, and the ability to avoid electric shock risks during maintenance when the load voltage is 0V upon disconnection.

[0003] However, existing high-side load switching circuits are prone to instantaneous overvoltage and overcurrent surges during the startup of high-power inductive and capacitive loads. These circuits lack targeted soft-start mechanisms, which can easily damage switching devices. Furthermore, they struggle to balance low on-resistance with high current carrying capacity, making it difficult to meet stable control requirements. In addition, the precision of independent control of multiple loads is insufficient. Existing signal acquisition and conditioning schemes cannot accurately capture minute current changes at each load end, making it difficult for the MCU to achieve real-time and accurate monitoring of the power consumption status of each load, and thus failing to adapt to the differentiated power supply management needs of complex systems.

[0004] In addition, when extreme faults such as load short circuits occur, the existing circuits shut down slowly, which can easily cause further damage to electrical equipment. Furthermore, they lack reliable fault self-locking and self-recovery functions, requiring manual intervention to restart after the fault is cleared, which affects the efficiency of system operation and maintenance. Summary of the Invention

[0005] This invention provides a high-power intelligent high-side load switching circuit and an electronic load switch to solve the above-mentioned problems in the prior art.

[0006] The first aspect of the present invention provides a high-power intelligent high-side load switching circuit, including a main control unit MCU, a power supply unit, a CAN communication module and multiple high-side load switching circuit units. The power supply terminal of the main control unit MCU is connected to the power supply unit. The first input terminal of each high-side load switching circuit unit is connected to the MCU_IO terminal of the main control unit MCU. The second input terminal of each high-side load switching circuit unit is connected to the MCU_ADC terminal of the main control unit MCU. The output terminal of each high-side load switching circuit unit is connected to a load. The MCU_IO pin of the main control unit MCU is used to output switching control signals to each high-side load switching circuit unit, and the MCU_ADC pin of the main control unit MCU is used to acquire the current feedback signals of each high-side load switching circuit unit. The power supply unit is used to supply power to the main control unit and each high-side load switching circuit unit.

[0007] In addition, the high-power intelligent high-side load switching circuit according to the present invention may also have the following additional technical features: In some embodiments of the present invention, each high-side load switching circuit unit includes a power supply module, a bootstrap boost circuit, a high-side current sense amplifier, a sampling resistor, and an NMOS transistor; The drain of the NMOS transistor is connected to the power supply unit, and the VCC terminal of the bootstrap circuit is also connected to the power supply unit. The TGDN and TGUP terminals of the bootstrap boost circuit are both connected to the gate of the NMOS transistor to drive the NMOS transistor to turn on or off. One end of the sampling resistor is connected to one end of the NMOS transistor, and the other end of the sampling circuit is connected to the load. The input of the high-side current sense amplifier is connected to the sampling resistor. The high-side current sense amplifier is used to acquire the load current and output a voltage feedback signal of 0 to 5V.

[0008] In some embodiments of the present invention, each high-side load switching circuit unit further includes logic circuitry and a comparator; The non-inverting input of the comparator is connected to the output of the high-side current sense amplifier, and the comparator is used to receive the output signal of the high-side current sense amplifier. The first signal input terminal of the logic circuit is connected to the signal output terminal of the comparator, and the second signal input terminal of the logic circuit is connected to the MCU_IO terminal of the main control unit MCU.

[0009] The logic circuit is used to receive the output of the comparator and the switching control signal of the MCU_IO terminal of the main control unit MCU to control the level of the INP terminal of the bootstrap boost circuit.

[0010] In some embodiments of the present invention, the logic circuit is connected to the INP terminal of the bootstrap boost circuit via an OR gate, and the input of the OR gate includes an external ON / OFF control signal and the output of the logic circuit.

[0011] In some embodiments of the present invention, each high-side load switching circuit unit further includes a power supply module, the input terminal of which is connected to the power supply unit, and the output terminal of which is connected to the VCC terminal of the bootstrap circuit.

[0012] In some embodiments of the present invention, each high-side load switching circuit unit further includes a lift capacitor connected between the BST pin and the SW pin of the bootstrap circuit.

[0013] In some embodiments of the present invention, the operating voltage range of the bootstrap circuit is -6V to 135V. The OVLO pin and VCCUV pin of the bootstrap circuit are used for overvoltage and undervoltage detection protection, respectively. When overvoltage or undervoltage is detected, the NMOS transistor is turned off by the logic circuit.

[0014] In some embodiments of the present invention, a CAN communication module is also included. The CAN communication module is connected to the main control unit MCU for communication and is used to realize data interaction and command transmission between the main control unit MCU and external devices.

[0015] In some embodiments of the present invention, a temperature sensor is also included. The temperature sensor is connected to the main control unit (MCU) and is used to collect the operating temperature and feed it back to the main control unit (MCU).

[0016] A second aspect of the present invention provides an electronic load switch, including all the technical features of the high-power intelligent high-side load switch circuit of the first aspect of the present invention.

[0017] In summary, this application includes the following beneficial technical effects: by using the independent configuration mode of the multi-side load switching circuit unit, and in conjunction with the one-to-one output of the switching control signal from the IO terminal of the main control unit MCU, independent on / off control of multiple loads can be achieved, accurately adapting to the differentiated power supply requirements of different loads in complex systems, avoiding the impact of single-path control failure on the overall system operation, and improving the flexibility and fault tolerance of load control.

[0018] By configuring the MCU_ADC terminal and each high-side load switching circuit unit, the current feedback signal of each load can be collected in real time. Combined with the data processing capability of the MCU, abnormal changes in load current can be quickly captured, providing data support for accurate judgment of faults such as overcurrent and overload, laying the foundation for intelligent protection, and effectively reducing the risk of load damage.

[0019] By using a power supply unit to provide unified power to the main control unit MCU and each load switching circuit unit, power supply stability is ensured, and voltage fluctuations during the start-up and shutdown of multiple loads are avoided from interfering with the control unit, thus improving the long-term operational reliability of the circuit under high power conditions. Attached Figure Description

[0020] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings: Figure 1 A schematic diagram of a high-power intelligent high-side load switching circuit according to some embodiments of the present invention is shown.

[0021] Figure 2 A schematic diagram of a high-side load switching circuit unit of a high-power intelligent high-side load switching circuit according to some embodiments of the present invention is shown.

[0022] Figure label: 1. Power supply unit; 2. Main control unit (MCU); 3. CAN communication module; 4. Temperature sensor; 5. High-side load switching circuit unit; 6. Power supply module; 7. NMOS transistor; 8. Sampling resistor; 9. High-side current sensing amplifier; 10. OR gate; 11. Comparator; 12. Logic circuit; 13. Lift capacitor; 14. Bootstrap voltage boost circuit. Detailed Implementation

[0023] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0024] like Figure 1 and Figure 2 As shown, according to an embodiment of the first aspect of the present invention, a high-power intelligent high-side load switching circuit is proposed, including a main control unit MCU2, a power supply unit 1, a CAN communication module 3, and multiple high-side load switching circuit units 5. The power supply terminal of the main control unit MCU2 is connected to the power supply unit 1. The first input terminal of each high-side load switching circuit unit 5 is connected to the MCU_IO terminal of the main control unit MCU2. The second input terminal of each high-side load switching circuit unit 5 is connected to the MCU_ADC terminal of the main control unit MCU2. The output terminal of each high-side load switching circuit unit 5 is connected to a load. The MCU_IO terminal of the main control unit MCU2 is used to output switching control signals to each high-side load switching circuit unit 5, and the MCU_ADC terminal of the main control unit MCU2 is used to collect the current feedback signals of each high-side load switching circuit unit 5. Power supply unit 1 is used to supply power to the main control unit and each high-side load switching circuit unit 5.

[0025] The technical effects achieved by the above embodiments are as follows: by using the independent configuration mode of the multi-side load switching circuit unit 5, and cooperating with the one-to-one output of the switch control signal from the IO terminal of the main control unit MCU2, independent on / off control of multiple loads can be realized, accurately adapting to the differentiated power supply requirements of different loads in complex systems, avoiding the impact of single-path control failure on the overall system operation, and improving the flexibility and fault tolerance of load control.

[0026] By configuring the MCU_ADC terminal and each high-side load switching circuit unit 5, the current feedback signal of each load can be collected in real time. Combined with the data processing capability of the MCU, abnormal changes in load current can be quickly captured, providing data support for accurate judgment of faults such as overcurrent and overload, laying the foundation for intelligent protection, and effectively reducing the risk of load damage.

[0027] By using power supply unit 1 to provide unified power to the main control unit MCU2 and each load switching circuit unit, the power supply stability is ensured, the interference of voltage fluctuations during the start-up and shutdown of multiple loads on the control unit is avoided, and the long-term operational reliability of the circuit under high power conditions is improved.

[0028] Optional, such as Figure 1 and Figure 2 As shown, each high-side load switching circuit unit 5 includes a power supply module 6, a bootstrap boost circuit 14, a high-side current sensing amplifier 9, a sampling resistor 8, and an NMOS transistor 7. The drain of NMOS transistor 7 is connected to power supply unit 1, and the VCC terminal of bootstrap circuit 14 is connected to power supply unit 1. The TGDN and TGUP terminals of the bootstrap boost circuit 14 are both connected to the gate of the NMOS transistor 7 to drive the NMOS transistor 7 to turn on or off. One end of the sampling resistor 8 is connected to one end of the NMOS transistor 7, and the other end of the sampling circuit is connected to the load. The input terminal of the high-side current sense amplifier 9 is connected to the sampling resistor 8. The high-side current sense amplifier 9 is used to acquire the load current and output a voltage feedback signal from 0 to 5V.

[0029] In the above optional embodiments, it should be noted that the high-side current sense amplifier 9 is an INA240A2 type high-side current sense amplifier 9.

[0030] The advantages of the above optional embodiments are as follows: the bootstrap boost circuit 14 drives the NMOS transistor 7 through the TGDN terminal and the TGUP terminal. With the combination of the connection between the drain and the power supply unit 1, it ensures that the NMOS transistor 7 is stably turned on and off at the high side position, which is suitable for high power operating conditions and avoids the problem of insufficient voltage in traditional driving methods.

[0031] By combining the sampling resistor 8 with the high-side current sensing amplifier 9, the load current signal can be captured relatively accurately and converted into a 0-5V voltage feedback signal. This facilitates efficient acquisition and accurate calculation at the MCU_ADC terminal of the main control unit MCU2, providing reliable data support for overcurrent fault prediction and load status monitoring. Furthermore, this ensures the accuracy of current detection while reducing conduction losses through the cooperation of the NMOS transistor 7 and the bootstrap circuit, effectively resisting voltage fluctuations during high-power start-up and shutdown, and improving the circuit's anti-interference capability.

[0032] Optional, such as Figure 1 and Figure 2 As shown, each high-side load switching circuit unit 5 also includes a logic circuit 12 and a comparator 11; The non-inverting input of comparator 11 is connected to the output of high-side current sense amplifier 9, and comparator 11 is used to receive the output signal of high-side current sense amplifier 9; The first signal input terminal of logic circuit 12 is connected to the signal output terminal of comparator 11, and the second signal input terminal of logic circuit 12 is connected to the MCU_IO terminal of the main control unit MCU2. Logic circuit 12 is used to receive the output of comparator 11 and the switching control signal of the MCU_IO terminal of the main control unit MCU to control the level of the INP terminal of the bootstrap boost circuit 14. In the above optional embodiments, it should be noted that the inverting input terminal of comparator 11 is used to connect to a fixed threshold voltage circuit composed of existing voltage divider resistors; the logic circuit 12 adopts the existing logic circuit 12, and the specific circuit components will not be discussed in detail here.

[0033] The advantages of the above optional embodiments are: by receiving the voltage feedback signal output by the high-side current detection amplifier 9 through the comparator 11 and comparing it with the preset threshold, the instantaneous identification of overcurrent faults can be realized, effectively improving safety and reliability.

[0034] The logic circuit 12 integrates the fault signal of the comparator 11 and the software control signal of the main control unit MCU2. It can immediately trigger the bootstrap boost circuit 14 to turn off the NMOS transistor 7 in case of overcurrent, so as to avoid damage to the load and devices. When there is no fault, it responds to the instructions of the main control unit MCU2 to ensure the normal switching of the load.

[0035] By combining the sampling resistor 8 and the bootstrap voltage boost circuit 14, conduction losses and voltage fluctuation interference are effectively reduced, and the circuit's anti-interference capability is enhanced.

[0036] Optional, such as Figure 1 and Figure 2As shown, logic circuit 12 is connected to the INP terminal of bootstrap boost circuit 14 through an OR gate 10. The input of OR gate 10 includes external ON / OFF control signals and the output of logic circuit 12.

[0037] Optional, such as Figure 1 and Figure 2 As shown, each high-side load switching circuit unit 5 also includes a power supply module 6. The input terminal of the power supply module 6 is connected to the power supply unit 1, and the output terminal of the power supply module 6 is connected to the VCC terminal of the bootstrap circuit 14.

[0038] In the above optional embodiments, it should be noted that the power module 6 outputs a 12V voltage.

[0039] The advantages of the above optional embodiments are as follows: by setting the power supply module 6, the voltage fluctuations caused by the start and stop of multiple loads in the power supply unit 1 can be filtered, providing a stable power supply for the bootstrap circuit 14, ensuring the stable driving performance of the NMOS transistor 7, and avoiding poor conduction or delayed turn-off caused by unstable driving voltage.

[0040] Optional, such as Figure 1 and Figure 2 As shown, each high-side load switching circuit unit 5 also includes a lift capacitor 13, which is connected between the BST pin and the SW pin of the bootstrap circuit 14.

[0041] The advantages of the above optional embodiments are as follows: The lift capacitor 13 is connected between the BST pin and the SW pin of the bootstrap boost circuit 14, playing a core role in charge storage and drive energy replenishment, resulting in significant technical benefits. It can quickly store charge, providing sufficient instantaneous drive energy to the bootstrap boost circuit 14, ensuring that the circuit can output a stable and sufficient drive voltage to the gate of the high-side NMOS transistor 7, meeting the reliable conduction requirements of the high-side position. Simultaneously, it effectively avoids problems such as insufficient conduction of the NMOS transistor 7 and increased on-resistance due to insufficient drive energy, reducing switching losses and improving circuit energy conversion efficiency. Combined with the drive logic of the bootstrap boost circuit 14, it enhances the switching response speed of the NMOS transistor 7, ensuring the accuracy and stability of switching operations under high-power conditions.

[0042] Optional, such as Figure 1 and Figure 2 As shown, the operating voltage range of the bootstrap boost circuit 14 is -6V to 135V. The OVLO pin and VCCUV pin of the bootstrap boost circuit 14 are used for overvoltage and undervoltage detection protection, respectively. When overvoltage or undervoltage is detected, the NMOS transistor 7 is turned off through the logic circuit 12.

[0043] In the above optional embodiments, it should be noted that the bootstrap boost circuit 14 is an LTC7001 bootstrap boost circuit 14.

[0044] Optional, such as Figure 1 and Figure 2 As shown, it also includes a CAN communication module 3, which is connected to the main control unit MCU2 for communication. The CAN communication module 3 is used to realize data interaction and command transmission between the main control unit MCU2 and external devices.

[0045] The advantages of the above optional embodiments are: reliable data communication and reliable control of the control system are achieved by setting up the CAN communication module 3.

[0046] Optional, such as Figure 1 and Figure 2 As shown, it also includes a temperature sensor 4, which is connected to the main control unit MCU2. The temperature sensor 4 is used to collect the operating temperature and feed it back to the main control unit MCU2.

[0047] The advantages of the above optional embodiments are: the setting of temperature sensor 4 can realize protection against overheating, thereby improving reliability.

[0048] The working principle of this circuit is as follows: when the power supply unit 1 is powered on, it provides DC12V working power to the main control unit MCU2 and each high-side load switching circuit unit 5.

[0049] The main control unit MCU2 initializes the CAN communication module 3, temperature sensor 4, and its own IO port and ADC port, waiting for external commands or automatically entering standby mode.

[0050] When the main control unit MCU2 receives a load start signal through the CAN communication module 3 or local command, it outputs a high level to the logic circuit 12 of the corresponding high-side load switch circuit unit 5 through the MCU_IO port of the main control unit MCU.

[0051] The logic circuit 12 outputs a high level to the OR gate 10, which drives the INP terminal of the bootstrap boost circuit 14 to a high level. The bootstrap boost circuit 14 outputs a drive voltage through the TGUP pin, which turns on the NMOS transistor 7 and powers on the load.

[0052] When the load current flows through the sampling resistor 8, the high-side current detection amplifier 9 collects the voltage difference across the sampling resistor 8 and converts it into a 0~5V voltage feedback signal. The voltage feedback signal is simultaneously input to the MCU_ADC port of the main control unit MCU2 and the comparator 11. The main control unit MCU2 reads the current value in real time and uploads it to the monitoring platform through the CAN communication module 3, or implements constant current regulation according to preset logic. The comparator 11 compares the feedback signal with the internal threshold. When the current exceeds the threshold, it outputs a low level to the logic circuit 12.

[0053] After receiving the overcurrent trigger signal from comparator 11, logic circuit 12 immediately outputs a low level to OR gate 10. OR gate 10 drives the INP terminal of bootstrap circuit 14 to a low level. Bootstrap circuit 14 pulls down the gate voltage of NMOS transistor 7 through the TGDN pin, turns off the load, and realizes hardware-level overcurrent protection.

[0054] Temperature sensor 4 collects the system temperature in real time. When the temperature exceeds the set temperature, the main control unit MCU2 actively shuts down the corresponding load through the MCU_IO port of the main control unit MCU to achieve overheat protection.

[0055] Finally, the main control unit MCU2 receives control commands from external devices via the CAN communication module 3 and uploads the current, temperature, and fault status of each channel. When an overvoltage, undervoltage, overcurrent, or overheating fault occurs, the main control unit MCU2 records the fault type and time, sends an alarm message via the CAN communication module 3, and simultaneously triggers the corresponding load protection action.

[0056] According to an embodiment of the second aspect of the present invention, an electronic load switch is provided, which includes all the technical features of the high-power intelligent high-side load switch circuit of the first aspect of the present invention.

[0057] Although the present invention has been described in detail above with general descriptions and specific embodiments, modifications or improvements can be made to it, which will be obvious to those skilled in the art. Therefore, all such modifications or improvements made without departing from the spirit of the present invention fall within the scope of protection claimed by the present invention.

[0058] The terms such as "upper," "lower," "left," "right," and "middle" used in this specification are merely for clarity of description and are not intended to limit the scope of the invention. Any changes or adjustments to their relative relationships, without substantially altering the technical content, should also be considered within the scope of the invention.

Claims

1. A high-power intelligent high-side load switching circuit, characterized in that, It includes a main control unit MCU (2), a power supply unit (1), a CAN communication module (3) and multiple high-side load switching circuit units (5). The power supply terminal of the main control unit MCU (2) is connected to the power supply unit (1). The first input terminal of each high-side load switching circuit unit (5) is connected to the MCU_IO terminal of the main control unit MCU (2). The second input terminal of each high-side load switching circuit unit (5) is connected to the MCU_ADC terminal of the main control unit MCU (2). The output terminal of each high-side load switching circuit unit (5) is connected to a load. The MCU_IO terminal of the main control unit MCU (2) is used to output switching control signals to each of the high-side load switching circuit units (5), and the MCU_ADC terminal of the main control unit MCU (2) is used to collect the current feedback signals of each of the high-side load switching circuit units (5). The power supply unit (1) is used to supply power to the main control unit and each of the high-side load switching circuit units (5).

2. The high-power intelligent high-side load switching circuit according to claim 1, characterized in that, Each of the high-side load switching circuit units (5) includes a power supply module (6), a bootstrap boost circuit (14), a high-side current sense amplifier (9), a sampling resistor (8), and an NMOS transistor (7). The drain of the NMOS transistor (7) is connected to the power supply unit (1), and the VCC terminal of the bootstrap boost circuit (14) is connected to the power supply unit (1). The TGDN and TGUP terminals of the bootstrap boost circuit (14) are both connected to the gate of the NMOS transistor (7) to drive the NMOS transistor (7) to turn on or off. One end of the sampling resistor (8) is connected to one end of the NMOS transistor (7), and the other end of the sampling circuit is connected to the load; The input terminal of the high-side current sensing amplifier (9) is connected to the sampling resistor (8). The high-side current sensing amplifier (9) is used to collect the load current and output a voltage feedback signal of 0 to 5V.

3. The high-power intelligent high-side load switching circuit according to claim 2, characterized in that, Each of the high-side load switching circuit units (5) further includes logic circuitry (12) and comparator (11); The non-inverting input of the comparator (11) is connected to the output of the high-side current sensing amplifier (9), and the comparator (11) is used to receive the output signal of the high-side current sensing amplifier (9). The first signal input terminal of the logic circuit (12) is connected to the signal output terminal of the comparator (11), and the second signal input terminal of the logic circuit (12) is connected to the MCU_IO terminal of the main control unit MCU (2). The logic circuit (12) is used to receive the output of the comparator (11) and the switch control signal of the MCU_IO terminal of the main control unit MCU to control the INP terminal level of the bootstrap boost circuit (14).

4. The high-power intelligent high-side load switching circuit according to claim 3, characterized in that, The logic circuit (12) is connected to the INP terminal of the bootstrap boost circuit (14) through an OR gate (10). The input of the OR gate (10) includes an external ON / OFF control signal and the output of the logic circuit (12).

5. The high-power intelligent high-side load switching circuit according to claim 3, characterized in that, Each of the high-side load switching circuit units (5) further includes a power supply module (6), the input terminal of which is connected to the power supply unit (1), and the output terminal of which is connected to the VCC terminal of the bootstrap circuit (14).

6. The high-power intelligent high-side load switching circuit according to claim 3, characterized in that, Each of the high-side load switching circuit units (5) further includes a lift capacitor (13) connected between the BST pin and the SW pin of the bootstrap circuit (14).

7. The high-power intelligent high-side load switching circuit according to claim 3, characterized in that, The operating voltage range of the bootstrap boost circuit (14) is -6V to 135V. The OVLO pin and VCCUV pin of the bootstrap boost circuit (14) are used for overvoltage and undervoltage detection protection, respectively. When overvoltage or undervoltage is detected, the NMOS transistor (7) is turned off through the logic circuit (12).

8. The high-power intelligent high-side load switching circuit according to claim 2, characterized in that, It also includes a CAN communication module (3), which is connected to the main control unit MCU (2) for communication. The CAN communication module (3) is used to realize data interaction and command transmission between the main control unit MCU (2) and external devices.

9. The high-power intelligent high-side load switching circuit according to claim 2, characterized in that, It also includes a temperature sensor (4), which is connected to the main control unit MCU (2). The temperature sensor (4) is used to collect the working temperature and feed it back to the main control unit MCU (2).

10. An electronic load switch, characterized in that, It includes all the technical features of the high-power intelligent high-side load switching circuit as described in any one of claims 1 to 9.

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