Infrared circularly polarized light detector, preparation method thereof and infrared circularly polarized light detection method

By employing a symmetry-mismatched heterojunction design in an infrared circular polarization detector, and utilizing semiconductor materials with different crystal symmetries to form a van der Waals heterojunction, efficient detection of infrared circular polarization light at room temperature is achieved. This solves the problems of low-temperature operation and complex structure in existing technologies, and improves detection accuracy and sensitivity.

CN122248810APending Publication Date: 2026-06-19HANGZHOU INST FOR ADVANCED STUDY UCAS
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
HANGZHOU INST FOR ADVANCED STUDY UCAS
Filing Date
2026-05-25
Publication Date
2026-06-19

AI Technical Summary

Technical Problem

Existing infrared circular polarization detectors need to operate in low-temperature environments, relying on the heterogeneous integration of chiral metamaterials or metal gratings with quantum well materials. This results in a large system size and high power consumption, which cannot meet the requirements for portable applications at room temperature. Furthermore, the structure is complex and the fabrication process is difficult.

Method used

A van der Waals heterojunction is formed by stacking a substrate layer, a first semiconductor layer, and a second semiconductor layer. By precisely aligning the in-plane lattice principal axes of two semiconductor materials with different crystal symmetries, a symmetry-mismatched heterojunction is formed, enabling direct electrical readout of infrared circularly polarized light without the need for complex chiral metamaterials or metal grating structures.

Benefits of technology

Direct electrical readout of the chirality of infrared circularly polarized light at room temperature simplifies the structure, reduces detection requirements and costs, improves detection efficiency and accuracy, and avoids the use of cryogenic cooling devices.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN122248810A_ABST
    Figure CN122248810A_ABST
Patent Text Reader

Abstract

This invention relates to the field of infrared circular polarization detection technology, and discloses an infrared circular polarization detector and its fabrication method, as well as an infrared circular polarization light detection method. The infrared circular polarization detector includes: a substrate layer, a first semiconductor layer, a second semiconductor layer, and electrodes stacked together; the first semiconductor layer and the second semiconductor layer are at least partially stacked to form a van der Waals heterojunction; the first semiconductor layer and the second semiconductor layer have different crystal symmetries; the angle between the principal axes of the first in-plane lattice of the first semiconductor layer and the principal axes of the second in-plane lattice of the second semiconductor layer is 0°, so as to form a symmetry-mismatched heterojunction interface at the van der Waals heterojunction interface; the infrared circular polarization detector is suitable for generating different photocurrent responses under illumination by left-handed and right-handed infrared circular polarization light. The infrared circular polarization detector of this invention can realize the chirality determination of infrared circular polarization light at room temperature, improving the detection accuracy, sensitivity, and efficiency of the infrared circular polarization detector.
Need to check novelty before this filing date? Find Prior Art