A baking rectification and resetting method for crystal bar bonding misalignment

By controlling the displacement and adhesive layer state of the crystal rod assembly during the baking stage, controlled correction and stable locking of the crystal rod assembly are achieved, solving the problems of rework losses and safety hazards after misalignment of the crystal rod bonding, and improving operational efficiency and safety.

CN122257117BActive Publication Date: 2026-09-18JIANGXI YUCHEN SEMICON CO LTD
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Patent Information

Application Number
CN202610607303.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2026-05-06
Publication Date
2026-09-18
Estimated Expiration
2046-05-06

AI Technical Summary

Technical Problem

Existing technologies lack effective methods for correcting and resetting misalignments during the baking stage when misalignment occurs after crystal rod bonding, resulting in significant rework losses, high safety risks, and inconvenient operation.

Method used

A baking correction and reset method for misaligned crystal rod bonding is adopted. By collecting the observed displacement during the baking stage, the state of the adhesive layer is determined by using a preset threshold, and the lateral, axial and angular corrections during the correction process are controlled. Combined with the adhesive release path and cooling stabilization, the controlled correction and stable locking of the crystal rod assembly are achieved.

Benefits of technology

Without dismantling the original bonding relationship, hot-state correction and cooling stabilization of crystal rod components can be achieved, reducing rework losses, improving operational safety and efficiency, and reducing the risk of hot drift and misalignment after cooling.

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Abstract

The application discloses a baking deviation rectification and resetting method for crystal bar bonding deviation, relates to the technical field of crystal bar processing and bonding deviation rectification control, and collects the displacement of a witness object in the same thermal path as the bonding layer in a baking process, and determines a plasticization positioning window of the bonding layer in combination with a reference fitting amount, an end position reaching amount, a rotation angle termination amount and a cooling completion amount; the horizontal, axial and micro-rotation angle correction degrees of freedom are sequentially released in the window, and limited floating rectification is implemented in combination with a boundary state, a lifting state and a damping state, and a glue releasing path and a back-to-stable thickness are controlled; after a preset positioning condition is reached, stable positioning is maintained and locked and cooling back-to-stable is performed, and low-impact transfer is completed. The method is beneficial to realizing in-situ rectification and resetting of the crystal bar under the condition of continuous glue and no separation.
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