Display panel and display device

Abstract

The display panel and display device of this application embodiment employ a color resist stacking structure to form a photosensitive aperture in the photosensitive area. The opening edge of the color resist layer with higher transmittance for 550nm wavelength light is selectively positioned closer to the center of the photosensitive aperture than the opening edges of other color resist layers. The extension of the opening edge of this color resist layer relative to the opening edges of other color resist layers constitutes a light-transmitting area. This light-transmitting area effectively increases the light-receiving area of ​​the photosensitive aperture. Simultaneously, the transmittance of this light-transmitting area is comparable to that of other color resist layers for 940nm wavelength light. Therefore, without affecting the transmittance of 940nm wavelength light, this application achieves a larger light-transmitting area for the photosensitive aperture, thereby resulting in a better light-sensing effect.

Description

Technical Field

[0001] This application relates to the field of display technology, and more particularly to a display panel and display device. Background Technology

[0002] As display panels become thinner and lighter with lower power consumption, POL-Less (Polymer Polarizer-Less) is increasingly widely used due to its significant advantages, gradually replacing POL (Polymer Polarizer) products.

[0003] To streamline the process and reduce costs, the industry often uses overlapping CF (color filter) to replace BM (black matrix) film layers, forming BM Less (Black Matrix Less) process, which is suitable for POL-Less product requirements.

[0004] The infrared sensor region requires a BM film layer definition, with a transmittance of >1% at 550nm and >3% at 940nm. After adopting the BM Less process, the IR hole (full name: Infrared Hole) needs to be replaced by CF overlapping to ensure normal infrared function.

[0005] However, the existing BM Less process has difficulty in achieving flush overlap of the R / G / B CF film layers, which easily leads to film layer misalignment. This results in unexpected light leakage in the edge area of ​​the infrared aperture, reducing the photosensitive accuracy and thus affecting the reliability of the infrared function. This technical defect urgently needs to be solved. Summary of the Invention

[0006] This application provides a display panel that can avoid unexpected light leakage in the edge area of ​​the IR hole, increase the photosensitive area, and improve the photosensitive accuracy, so as to at least partially solve the above-mentioned technical problems.

[0007] To achieve the above objectives, according to a first aspect of this application, a display panel is provided, comprising a display area and a photosensitive area: an array functional layer; a light-emitting functional layer located above the array functional layer, comprising a plurality of sub-pixels arrayed in the display area and the photosensitive area; a light-shielding layer located on the side of the light-emitting functional layer facing the light-emitting surface of the display panel; the light-shielding layer comprising a first color resist layer, a second color resist layer, and a third color resist layer of different colors, wherein at least a portion of the first color resist layer, the second color resist layer, and the third color resist layer are stacked to form a color resist stacking structure; the light-shielding layer has a photosensitive opening at a position corresponding to the photosensitive area, and the color resist stacking structure defines the photosensitive opening; wherein, in the photosensitive area, the opening edge of the second color resist layer is closer to the center of the photosensitive opening than the opening edges of the other color resist layers, and the second color resist layer has a higher transmittance for light in the @550nm wavelength band than the other color resist layers.

[0008] Optionally, the second color resist layer is a green color resist layer, the first color resist layer is either a red color resist layer or a blue color resist layer, and the third color resist layer is the opposite of either a red color resist layer or a blue color resist layer; wherein, the opening edge of the second color resist layer is closer to the center of the photosensitive opening than the opening edges of the first color resist layer and the third color resist layer, and the portion of the opening edge of the second color resist layer extending beyond the opening edges of the first color resist layer and the third color resist layer is a light-transmitting area, which is arranged around the photosensitive opening.

[0009] Optionally, in the color resist stacking structure, the second color resist layer is located on one side of the superposition layer of the first color resist layer and the third color resist layer.

[0010] Optionally, the superimposed layer of the first color resist layer and the third color resist layer is located on the side of the second color resist layer facing the light-emitting surface of the display panel; The opening edge of the second color resist layer is closer to the center of the photosensitive opening than the opening edge of the superimposed layer; The first color resist layer and the third color resist layer are flush with each other at their opening edges. Alternatively, the second color resist layer, the third color resist layer, and the first color resist layer are stacked sequentially from the light-shielding layer toward the light-emitting surface of the display panel. The opening edge of the second color resist layer is closer to the center of the photosensitive aperture than the opening edge of the third color resist layer, and the opening edge of the third color resist layer is closer to the center of the photosensitive aperture than the opening edge of the first color resist layer.

[0011] Optionally, the second color resist layer is located on the side of the stack of the first color resist layer and the third color resist layer away from the photosensitive unit; the opening edge of the second color resist layer covers the surface of the stack layer and wraps around the side of the stack layer to the bottom side of the color resist layer stack structure.

[0012] Optionally, the second color resist layer is located between the first color resist layer and the third color resist layer; the second color resist layer is located on the side of the third color resist layer away from the photosensitive unit, and the first color resist layer is located on the side of the second color resist layer away from the third color resist layer; the second color resist layer covers the surface of the third color resist layer and covers the side portion of the third color resist layer to the bottom of the color resist stack structure; the opening edge of the second color resist layer is closer to the center of the photosensitive opening than the opening edge of the first color resist layer.

[0013] Optionally, a color resist stacking structure is provided between adjacent sub-pixels, and one layer of the color resist stacking structure extends to the light-emitting side of the corresponding sub-pixel to form a light-filtering color resist.

[0014] Optionally, in the light-shielding layer, the color resist stacking structure corresponding to the sub-pixel and the color resist stacking structure located in the photosensitive area have the same color resist stacking order.

[0015] The color resist stacking structure corresponding to the sub-pixel includes a first color resist layer, a second color resist layer, and a third color resist layer stacked sequentially from the back side of the display panel to the light-emitting surface; in the color resist stacking structure corresponding to the red sub-pixel, the opening edge of the second color resist layer is closer to the center of the sub-pixel than the opening edge of the first color resist layer.

[0016] The color resist stacking structure located in the photosensitive area includes a first color resist layer, a second color resist layer, and a third color resist layer stacked sequentially from the back side of the display panel to the light-emitting surface; the second color resist layer covers the surface of the first color resist layer and covers the side portion of the first color resist layer to one side of the bottom of the color resist stacking structure; the opening edge of the second color resist layer is closer to the center of the photosensitive opening than the opening edge of the third color resist layer.

[0017] Optionally, the area includes a regular display area and a privacy display area; the light-shielding layer includes a first light-filtering opening located in the regular display area and a second light-filtering opening located in the privacy display area, wherein the aperture of the second light-filtering opening is smaller than the aperture of the first light-filtering opening; the aperture of the photosensitive opening is smaller than the apertures of the first light-filtering opening and the second light-filtering opening.

[0018] Optionally, the display panel further includes a first transparent organic layer located above the light-shielding layer; wherein, the first transparent organic layer is provided with a first black light-shielding layer above the privacy display area, the first black light-shielding layer forms a first privacy opening, and the first privacy opening is smaller than or equal to the aperture of the second light-filtering opening.

[0019] Optionally, the display panel further includes a second transparent organic layer located above the first transparent organic layer; wherein, the second transparent organic layer is provided with a second black light-shielding layer above the privacy display area, the second black light-shielding layer forms a second privacy opening, and the second privacy opening is equal to the first privacy opening.

[0020] Optionally, the first color resist layer, the second color resist layer, and the third color resist layer have equivalent transmittance for light in the @940nm wavelength band.

[0021] According to a second aspect of this application, a display device is provided, including all the technical features of the aforementioned display panel.

[0022] The display panel and display device of this application embodiment employ a color resist stacking structure to form a photosensitive aperture in the photosensitive area. The opening edge of the color resist layer with higher transmittance for 550nm wavelength light is selectively positioned closer to the center of the photosensitive aperture than the opening edges of other color resist layers. The extension of the opening edge of this color resist layer relative to the opening edges of other color resist layers constitutes a light-transmitting area. This light-transmitting area effectively increases the light-receiving area of ​​the photosensitive aperture. Simultaneously, the transmittance of this light-transmitting area is comparable to that of other color resist layers for 940nm wavelength light. Therefore, without affecting the transmittance of 940nm wavelength light, this application achieves a larger light-transmitting area for the photosensitive aperture, thereby resulting in a better light-sensing effect.

[0023] Other features and advantages of this application will be described in detail in the following detailed description section. Attached Figure Description To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings, wherein the same reference numerals in the following description denote the same parts.

[0025] Figure 1 This is a schematic diagram of the display panel structure provided in an exemplary embodiment of this disclosure; Figure 2 This is a schematic diagram of the photosensitive area structure of the display panel provided in an exemplary embodiment of this disclosure; Figure 3 , Figure 4 , Figure 5 for Figure 2 Schematic diagram of the A-A' section structure; Figure 6 This is a schematic diagram of the display panel film layer structure provided in an exemplary embodiment of this disclosure.

[0026] Explanation of reference numerals in the attached figures: 10. Display panel; 20. Emissive functional layer; R, red sub-pixel; G, green sub-pixel; B, blue sub-pixel; 30. Photosensitive functional layer; 301. Photosensitive unit; 40. Light-blocking layer; 401. First color resist layer; 402. Second color resist layer; 403. Third color resist layer; 404. Color resist stacking structure; 405. Photosensitive opening; 406. Light-transmitting area; 407. First filter opening; 408. Second filter opening; 501. Regular display area; 502. Privacy protection display area; 503. Photosensitive area; 601. First black light-blocking layer; 602. Second black light-blocking layer; 603. First privacy opening; 604. Second privacy opening; 701, First transparent organic layer; 702, Second transparent organic layer; 80. Touch layer; 90. Array Functional Layer. Detailed Implementation The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the protection scope of this application.

[0027] In existing display panels using the BM Less process, color filters need to be overlapped to ensure proper infrared functionality. However, the current BM Less process struggles to achieve flush overlap of the red, green, and blue color filter layers, leading to layer misalignment. This results in unexpected light leakage at the edge of the IR aperture, interfering with photosensitive signal acquisition and severely impacting infrared functionality.

[0028] For this, see Figure 1 , Figure 2 and Figure 6This application proposes a display panel 10, including a display area and a photosensitive area 503; an array functional layer 90, including a thin-film transistor array and a driving circuit electrically connected to the thin-film transistor array; a light-emitting functional layer 20, located above the array functional layer 90, including a plurality of sub-pixels arrayed in the display area and the photosensitive area 503; a light-shielding layer 40, located on the side of the light-emitting functional layer 20 facing the light-emitting surface of the display panel 10; and a touch layer 80, located between the light-emitting functional layer 20 and the light-shielding layer 40. The light-shielding layer 40 includes a first color resist layer 401, a second color resist layer 402, and a third color resist layer 403 of different colors, and at least a portion of the first color resist layer 401, the second color resist layer 402, and the third color resist layer 403 are stacked to form a color resist stacking structure 404. The light-shielding layer 40 has a photosensitive opening 405 at a position corresponding to the photosensitive area 503, and the color resist stacking structure 404 defines the photosensitive opening 405. In the photosensitive area 503, the opening edge of the second color resist layer 402 is closer to the center of the photosensitive opening 405 than the opening edges of other color resist layers, and the transmittance of the second color resist layer 402 for light in the @550nm band is greater than that of other color resist layers.

[0029] The display panel 10 of this application includes a light-emitting functional layer 20, which is configured as an organic light-emitting diode layer, a liquid crystal display layer, or other self-emissive or backlight display technology layer. The sub-pixels in the light-emitting functional layer 20 can be arranged in a matrix, and each sub-pixel can independently emit light or dim to form an image. For example, the sub-pixels may include a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B, achieving full-color display through combinations of different brightness levels.

[0030] The display panel 10 further includes a photosensitive area 503, within which sub-pixels and adjacent photosensitive openings 405 are disposed. A photosensitive unit 301 is correspondingly disposed within the photosensitive area 503, located on the back side of the display panel 10 and aligned with the photosensitive area 503. The photosensitive unit 301 can be configured as a photodiode, photoresistor, or other photoelectric conversion device for detecting ambient light or light of a specific wavelength.

[0031] A light-shielding layer 40 is disposed above the light-emitting functional layer 20 and the photosensitive functional layer 30, i.e., near the light-emitting side of the display panel 10. This light-shielding layer 40 can be composed of one or more layers of material, and its main function is to block unwanted light, prevent light crosstalk, and define the boundary of the display area or photosensitive area 503. For example, the light-shielding layer 40 can be configured to form isolation between sub-pixels in the display area, or to provide specific optical properties in the photosensitive area 503.

[0032] See Figure 3 , Figure 4 and Figure 5The light-shielding layer 40 includes a first color resist layer 401, a second color resist layer 402, and a third color resist layer 403, each of a different color. These color resist layers can be composed of materials of various colors; for example, they can include color resist layers of three basic colors. These color resist layers can be sequentially deposited or printed on a substrate to form a multilayer stacked structure. The color resist stacked structure 404 can be configured to provide light-shielding between sub-pixels in the display area, or to provide specific optical properties in the photosensitive area 503. For example, the first color resist layer 401, the second color resist layer 402, and the third color resist layer 403 can be configured to partially overlap to form a composite light-filtering effect in a specific area.

[0033] A light-shielding layer 40 has a photosensitive opening 405 at a position corresponding to the photosensitive area 503 to allow external light to enter the photosensitive area 503. The shape and size of the photosensitive opening 405 can be designed as circular, square, or other geometric shapes. The boundary of the photosensitive opening 405 can be precisely defined by the color resist stack structure 404, that is, different layers of the color resist stack structure 404 can jointly form the opening edge of the photosensitive opening 405, thereby ensuring the dimensional and positional accuracy of the photosensitive opening 405. For example, a precise photosensitive opening 405 can be formed in the color resist stack structure 404 through photolithography and etching processes.

[0034] In the color resist stack structure 404, the opening edge of one color resist layer is designed to be closer to the center of the photosensitive aperture 405 in the horizontal direction compared to the opening edges of other color resist layers. The portion of the opening edge of this color resist layer extending beyond the opening edges of the other color resist layers forms a light-transmitting area 406, thereby forming a ring-shaped light-transmitting area 406 around the photosensitive aperture 405. This protruding layer can be selected as a color resist layer with high transmittance for light in a specific wavelength band. For example, the color resist layer can be designed to have significantly higher transmittance for light in the @550nm wavelength band than other color resist layers. Thus, when light enters the photosensitive unit 301 through the photosensitive aperture 405, the light-transmitting area 406 can effectively increase the light collection area, thereby enhancing the photosensitivity of the photosensitive unit 301. For example, by adjusting the pattern size and alignment accuracy of each color resist layer, the opening edge of one color resist layer can be made to protrude towards the center of the photosensitive aperture relative to the edge openings of other color resist layers.

[0035] This application forms a light-transmitting area 406 surrounding the photosensitive opening 405 by providing a color resist layer with a protruding edge in the color resist stacking structure 404. This protruding layer has high transmittance for light in the @550nm band and transmittance for light in the @940nm band that is no lower than that of other color resist layers. Specifically, @550nm refers to visible green light with a center wavelength of 550nm, and @940nm refers to invisible near-infrared light with a center wavelength of 940nm. Thus, in the BM Less process, even if there is a misalignment at the opening edge of the color resist layer, the light-transmitting area 406 can effectively compensate for the light-receiving area of ​​the infrared aperture, reduce light leakage in the non-light-emitting area, reduce interference with the photosensitive signal, thereby significantly improving the light intake of the photosensitive area 503 and ensuring the photosensitive effect of the photosensitive unit 301. This application further proposes that the first color resist layer 401 is a red color resist layer, the second color resist layer 402 is a green color resist layer, and the third color resist layer 403 is a blue color resist layer; wherein, the opening edge of the second color resist layer 402 is closer to the center of the photosensitive aperture 405 than the opening edges of the first color resist layer 401 and the third color resist layer 403, and the portion of the opening edge of the second color resist layer extending beyond the opening edges of the first color resist layer 401 and the third color resist layer 403 is a light-transmitting area 406, and the light-transmitting area 406 is disposed around the photosensitive aperture 405.

[0036] Specifically, in the display panel 10, color resist layers are typically used to form red, green, and blue primary color sub-pixels to achieve full-color display. The red color resist layer is mainly used to filter light other than red light, making the sub-pixels appear red, and its transmittance for light in the @550nm wavelength band is usually low (transmittance <3%). The green color resist layer is mainly used to filter light other than green light, making the sub-pixels appear green, and its transmittance for light in the @550nm wavelength band is usually relatively high (transmittance 50%~70%). The blue color resist layer is mainly used to filter light other than blue light, making the sub-pixels appear blue, and its transmittance for light in the @550nm wavelength band is also usually low (transmittance <3%). These color resist layers can be deposited and patterned layer by layer on the substrate using photolithography. For example, photoresist containing specific pigments can be coated onto the substrate using spin coating, inkjet printing, etc., and then the desired pattern can be formed through exposure, development, and curing steps.

[0037] The fact that the opening edge is closer to the center of the photosensitive aperture 405 means that in the color resist stacking structure 404, the pattern size of a specific color resist layer (here, the second color resist layer 402) is larger than the pattern size of its adjacent or stacked color resist layers (the first color resist layer 401 and the third color resist layer 403), thereby forming an extension in a specific area that extends beyond the boundaries of other layers. When the edge opening of the second color resist layer 402 is closer to the center of the photosensitive aperture 405, its protruding portion forms an additional area around the photosensitive aperture 405 corresponding to the photosensitive area 503, which is the light-transmitting area 406 surrounding the photosensitive aperture 405. This relative extension of the opening edge can be achieved in various ways. For example, the photomask of the second color resist layer 402 can be precisely designed so that its opening size is slightly larger than the opening sizes of the first color resist layer 401 and the third color resist layer 403, thereby forming a structure after development where the opening edge of the second color resist layer 402 extends towards the photosensitive aperture relative to the opening edges of the other color resist layers. Alternatively, in some cases, by controlling the etching rate or etching time of different color resist layers, the second color resist layer 402 can retain a larger area during lateral etching, thereby allowing the opening edge to extend towards the center of the photosensitive via. Furthermore, during the multilayer color resist stacking process, precise interlayer alignment and patterning design can ensure that, after the formation of the second color resist layer 402, its opening edge extends horizontally beyond the opening edges of the already formed or to be formed first color resist layer 401 and third color resist layer 403.

[0038] Through the above technical solution, the first color resist layer 401, the second color resist layer 402, and the third color resist layer 403 are respectively defined as a red color resist layer, a green color resist layer, and a blue color resist layer. It is further specified that a light-transmitting area 406 is formed around the photosensitive opening 405, extending from the opening edge of the green color resist layer (i.e., the second color resist layer 402) towards the center of the photosensitive opening 405. Given that the green color resist layer has high transmittance for light in the @550nm wavelength band, this design ensures that the light-transmitting area 406 effectively transmits light of these wavelengths, thereby enhancing the light-gathering capability of the photosensitive area 503. This not only optimizes the light transmittance performance of the light-transmitting area 406 and improves the photosensitivity, but also, in the BM Less process, even if there is a misalignment of the color resist layer, the high transmittance of the green color resist layer can effectively reduce light leakage interference and improve the reliability of the infrared function, thus solving the problem of poor photosensitivity caused by the low transmittance of the prominent color resist layer in the prior art. See Figure 3This application further proposes a display panel 10, wherein a superimposed layer of a first color resist layer 401 and a third color resist layer 403 is located on the side of the second color resist layer 402 away from the photosensitive area 503; the opening edge of the second color resist layer 402 is closer to the center of the photosensitive aperture 405 than the opening edge of the superimposed layer, wherein the opening edges of the first color resist layer 401 and the third color resist layer 403 are flush, or, from the light-shielding layer 40 toward the light-emitting surface of the display panel 10, the second color resist layer 402, the third color resist layer 403, and the first color resist layer 401 are stacked sequentially, and the opening edge of the second color resist layer 402 is closer to the center of the photosensitive aperture 405 than the opening edge of the third color resist layer 403, and the opening edge of the third color resist layer 403 is closer to the center of the photosensitive aperture 405 than the opening edge of the first color resist layer 401.

[0039] Specifically, in the above technical solution, the superimposed layer of the first color resist layer 401 and the third color resist layer 403 is located on the side of the second color resist layer 402 away from the photosensitive area 503. That is, the second color resist layer 402 (for example, the green color resist layer as described in the above embodiment) is positioned under the superimposed layer formed by the first color resist layer 401 (for example, the red color resist layer) and the third color resist layer 403 (for example, the blue color resist layer), close to and away from the photosensitive area 503.

[0040] Furthermore, the opening edge of the second color resist layer 402 is closer to the center of the photosensitive aperture 405 than the opening edge of the superimposed layer. This technical feature describes the relative lateral dimensions of the superimposed layer and the second color resist layer 402. Specifically, the lateral opening edge of the superimposed layer composed of the first color resist layer 401 and the third color resist layer 403 is contracted away from the photosensitive aperture 405 relative to the lateral opening edge of the second color resist layer 402, that is, the lateral dimension of the superimposed layer is smaller than that of the second color resist layer 402. This inward setting causes the second color resist layer 402 to form a protruding portion around the superimposed layer at the opening edge of the photosensitive aperture 405 region corresponding to the photosensitive area 503, thereby visually and functionally highlighting the role of the second color resist layer 402 and helping to control the path of light through the photosensitive aperture 405.

[0041] The opening edge of the second color resist layer 402 is closer to the center of the photosensitive aperture 405 than the opening edge of the superimposed layer, which further ensures that the second color resist layer 402 protrudes at the opening edge of the photosensitive aperture 405, so that the light transmission characteristics of this area are mainly determined by the second color resist layer 402, thereby optimizing the screen-off color without affecting the light-sensing effect. Furthermore, by providing flush opening edges for the first color resist layer 401 and the third color resist layer 403, or by sequentially stacking the second color resist layer 402, the third color resist layer 403, and the first color resist layer 401 from the light-shielding layer 40 toward the light-emitting surface of the display panel 10, with the opening edge of the second color resist layer 402 closer to the center of the photosensitive aperture 405 than the opening edge of the third color resist layer 403, and the opening edge of the third color resist layer 403 closer to the center of the photosensitive aperture 405 than the opening edge of the first color resist layer 401, these two refined opening edge processing methods not only improve the alignment accuracy and yield during manufacturing and avoid light leakage problems caused by uneven opening edges, but also allow for flexible adjustment of the color resist stacking structure 404 according to specific needs to achieve optimal color performance and photosensitivity. Overall, this solution improves the off-screen visual experience of the display panel 10 while maintaining normal operation of the photosensitivity function, thus enhancing the overall quality of the product. See Figure 5 This application further proposes a display panel 10, wherein a second color resist layer 402 is located on the side away from the photosensitive area 503 of the superimposed layer of the first color resist layer 401 and the third color resist layer 403; the opening edge of the second color resist layer 402 covers the surface of the superimposed layer and covers the side of the superimposed layer to one side of the bottom of the color resist layer stack structure.

[0042] Specifically, the statement that "the second color resist layer 402 is located on the side of the stacked layer of the first color resist layer 401 and the third color resist layer 403 away from the photosensitive area 503" clarifies the vertical position of the second color resist layer 402 within the entire color resist stack structure 404. Here, "stacked layer" refers to the combined structure formed vertically by the first color resist layer 401 and the third color resist layer 403. "The side away from the photosensitive area 503" defines the second color resist layer 402 as being located on the side of this combined structure furthest from the photosensitive area 503, typically meaning the second color resist layer 402 is on the top or uppermost layer of the stacked structure. This positioning helps ensure that the second color resist layer 402 can effectively define the light-transmitting area 406 and provides a favorable structural basis for subsequent overlay and encapsulation. In actual manufacturing, this positioning can be achieved in various ways. For example, the third color resist layer 403 can be deposited first, followed by the first color resist layer 401 deposited on top of it to form a stacked layer, and finally the second color resist layer 402 can be deposited and patterned on top of the first color resist layer 401. Alternatively, by precisely controlling the deposition thickness and patterning sequence of each color resist layer, the main body of the second color resist layer 402, after patterning, is located above the superimposed layer formed by the first color resist layer 401 and the third color resist layer 403, that is, on the side away from the photosensitive area 503 of the photosensitive unit 301.

[0043] The statement "The opening edge of the second color resist layer 402 covers the surface of the stacked layer and wraps around the sides of the stacked layer to one side of the bottom of the color resist layer stack structure" details the lateral coverage relationship between the second color resist layer 402 and the stacked layer formed by the first color resist layer 401 and the third color resist layer 403. "Covering the surface of the stacked layer" means that the opening edge of the second color resist layer 402 extends horizontally beyond the top opening edge of the stacked layer, thus completely covering the top area of ​​the stacked layer in a top-down view. "Wrapping around the sides of the stacked layer to one side of the bottom of the color resist layer stack structure" means that the opening edge of the second color resist layer 402 not only covers the top but also extends downwards along the sidewalls of the stacked layer until it approaches or reaches the bottom opening edge of the entire color resist stack structure 404. This design aims to create a wrap-like structure that protects the stacked layer from the top and sides. In the implementation process, the patterning of the second color resist layer 402 can be precisely controlled by adjusting the size and shape of the photolithographic mask, so that its opening size is slightly larger than that of the underlying stacked layer, thereby naturally forming an effect of opening edge coverage and encapsulation after deposition and patterning. In addition, the good fluidity of the second color resist layer 402 material can be utilized, or appropriate heat treatment (such as reflow process) can be performed after deposition, so that it can better flow along the sidewalls of the underlying stacked layer and form an encapsulation structure during the curing process.

[0044] Through the above technical solution, this application effectively solves the problem of reddish color deviation that may occur in the display panel 10 when the screen is off. Specifically, the second color resist layer 402 is positioned on the side away from the photosensitive unit 301 of the superimposed layer of the first color resist layer 401 and the third color resist layer 403, so that the second color resist layer 402 (e.g., a green color resist layer) dominates within the corresponding photosensitive opening 405. Thus, when the screen is off, this area mainly presents a green tone, effectively neutralizing the reddish visual effect that the red color resist layer may bring, and realizing the adjustment of the screen-off color.

[0045] Furthermore, this application effectively solves the problem of incomplete coverage or light leakage caused by the positional shift of the color resist layer during manufacturing by precisely controlling the position and coverage method of the second color resist layer 402 in the color resist stack structure 404, thereby optimizing the light-gathering effect. Specifically, the second color resist layer 402 is positioned on the side away from the photosensitive unit 301 of the stacked layer of the first color resist layer 401 and the third color resist layer 403, so that the second color resist layer 402 can serve as the outermost or top layer, facilitating its opening edge to protrude towards the center of the photosensitive aperture 405, forming a light-transmitting area 406 around the photosensitive aperture 405, and ensuring that this light-transmitting area 406 is mainly defined by the second color resist layer 402, which has high transmittance for light in the @550nm wavelength band. On this basis, the opening edge of the second color resist layer 402 not only covers the surface of the stacked layer, but also further covers the side of the stacked layer up to one side of the bottom of the color resist stack structure. This comprehensive coverage and encapsulation design effectively blocks potential light leakage paths from the sides of the stacked layers. Even slight misalignment between layers during manufacturing can be compensated for by the encapsulation effect of the second color resist layer 402, preventing light leakage from non-emitting areas from interfering with the acquisition of photosensitive signals. Therefore, this solution ensures that the light-receiving area of ​​the IR aperture is effectively utilized and significantly improves the accuracy and stability of the infrared signal received by the photosensitive unit 301, thereby guaranteeing the normal operation of the infrared function. See Figure 4 This application further proposes a display panel 10, wherein the color resist stacking structure 404 in the light-shielding layer 40 is optimized. Specifically, the second color resist layer 402 is located between the first color resist layer 401 and the third color resist layer 403; the second color resist layer 402 is located on the side of the third color resist layer 403 away from the photosensitive unit 301, and the first color resist layer 401 is located on the side of the second color resist layer 402 away from the third color resist layer 403; the second color resist layer 402 covers the surface of the third color resist layer 403 and covers the side of the third color resist layer 403 to the bottom of the color resist stacking structure 404; the opening edge of the second color resist layer 402 is closer to the center of the photosensitive opening 405 than the opening edge of the first color resist layer 401 which is recessed.

[0046] Specifically, the second color resist layer 402 is located between the first color resist layer 401 and the third color resist layer 403. This means that in the color resist stacking structure 404, the second color resist layer 402 is sandwiched between the first color resist layer 401 and the third color resist layer 403. This interlayer positioning is designed to optimize the overall color performance of the display panel 10 in the off state and ensure effective light collection of the photosensitive unit 301 by controlling the relative positions of each color resist layer in the vertical direction. For example, this can be achieved by depositing and patterning the second color resist layer 402 after depositing the first color resist layer 401, and finally depositing and patterning the third color resist layer 403; or, it can be achieved by depositing the third color resist layer 403 first, then depositing the second color resist layer 402, and finally depositing the first color resist layer 401, as long as the final relative positional relationship is satisfied.

[0047] Furthermore, the second color resist layer 402 is located on the side of the third color resist layer 403 away from the photosensitive unit 301, while the first color resist layer 401 is located on the side of the second color resist layer 402 away from the third color resist layer 403. This precise stacking order can be understood, for example, as the third color resist layer 403, the second color resist layer 402, and the first color resist layer 401 arranged sequentially from the side closest to the photosensitive unit 301 upwards. This specific layer arrangement aims to refine the light transmission characteristics of the red, green, and blue primary color resist layers in the photosensitive area 503, playing a crucial role, especially in solving the problem of color distortion when the screen is off.

[0048] Furthermore, the second color resist layer 402 covers the surface of the third color resist layer 403 and encloses the sides of the third color resist layer 403 to one side of the bottom of the color resist stack structure 404. This enclosing structure means that the second color resist layer 402 not only covers the third color resist layer 403 in the vertical direction, but its opening edge also extends downwards, wrapping around the side of the third color resist layer 403, and even extending to the bottom of the color resist stack structure 404. This design effectively solves the problem of light leakage caused by film layer misalignment at the opening edge of the color resist layer in the BM Less process, especially for the potential side light leakage of the third color resist layer 403.

[0049] Meanwhile, the opening edge of the second color resist layer 402 is closer to the center of the photosensitive aperture 405 than the opening edge of the first color resist layer 401. This means that in the color resist stacking structure 404, the opening edge of the first color resist layer 401 is located inside the opening edge of the second color resist layer 402, that is, the opening size of the first color resist layer 401 is smaller than the opening size of the second color resist layer 402. By reducing the exposed area of ​​the red color resist layer in the light-transmitting area 406, its impact on the overall screen-off color is reduced.

[0050] This application further proposes that the colors of the first color resist layer 401 and the third color resist layer 403 can be interchanged.

[0051] This technical feature refers to the fact that in the color resist stack structure 404, the colors of the first color resist layer 401 and the third color resist layer 403 can be interchanged according to design requirements. For example, if in one embodiment the first color resist layer 401 is set to red and the third color resist layer 403 is set to blue, then in another embodiment the first color resist layer 401 can be set to blue and the third color resist layer 403 can be set to red. This interchangeability is achieved by selecting different coloring materials or adjusting the deposition order during the manufacturing process, so that the two color resist layers can perform different filtering functions. For example, the first color resist layer 401 can be used to filter out blue light, while the third color resist layer 403 can be used to filter out red light, and vice versa.

[0052] The above technical solution allows the colors of the first color resist layer 401 and the third color resist layer 403 to be interchangeable, thereby providing flexibility in the color resist stacking design and effectively solving the limitations that may be caused by a fixed color order. Specifically, in some of the above embodiments, the opening edge of the second color resist layer 402 is closer to the center of the photosensitive aperture 405 than the opening edges of the first color resist layer 401 and the third color resist layer 403. The protruding portion of the second color resist layer 402 forms a light-transmitting area 406 surrounding the photosensitive aperture 405. This light-transmitting area 406 has a higher transmittance for light in the @550nm wavelength band than other color resist layers, so as to ensure the normal light intake of the photosensitive area 503. Based on this, by adjusting the color distribution of the first color resist layer 401 and the third color resist layer 403, for example, by swapping the roles of the red and blue color resist layers, the overall color performance of the display panel 10 in the screen-off state can be effectively adjusted. For example, if the display panel 10 may exhibit an undesirable color cast (such as a reddish tint) when the screen is off under a certain stacking order, by swapping the colors of the first color resist layer 401 and the third color resist layer 403, the screen-off color can be neutralized or adjusted to a more desirable visual effect without affecting the light transmittance performance of the photosensitive area 503. See also Figure 6 This application proposes a display panel 10, wherein a color resist stacking structure 404 is disposed between adjacent sub-pixels, and one layer of the color resist stacking structure 404 extends to the light-emitting side of the sub-pixel to form a light-filtering color resist.

[0053] Specifically, in the display panel 10, subpixels are the smallest units that constitute an image, and they are typically arranged in an array. There are usually gaps or boundary areas between adjacent subpixels. The color resist stacking structure 404 is placed in these gaps to utilize its light-blocking properties to effectively isolate light between different subpixels, prevent light crosstalk, and provide a structural basis for subsequent light filtering functions. For example, the color resist stacking structure 404 can fill the space between the opening edges of two adjacent subpixels, or partially cover the opening edge areas of adjacent subpixels.

[0054] The light-emitting side of a subpixel refers to the direction in which the light emitted by the subpixel leaves the display panel 10. Here, "extension" refers to a color resist layer in the color resist stack structure 404 whose physical size or coverage extends beyond its original position between adjacent subpixels, further covering the effective light-emitting area of ​​the subpixel or its opening edge. The purpose of this extension is to achieve the filtering function directly using the color resist layer without introducing an additional independent filter layer.

[0055] By employing the aforementioned technical solution, a color resist stacking structure 404 is set between adjacent sub-pixels, and one layer of the color resist stacking structure 404 extends to the light-emitting side of the sub-pixel to form a color filter. This application effectively solves the problem in the prior art where the color resist stacking structure 404 is not sufficiently integrated in the sub-pixel area, resulting in the need for an independent color filter layer, thereby increasing structural complexity and manufacturing difficulty, and potentially causing light leakage risks. Specifically, by placing the color resist stacking structure 404 between adjacent sub-pixels, its inherent light-shielding properties effectively isolate light between different sub-pixels, preventing light crosstalk, and providing a structural basis for subsequent color filtering functions. This design avoids the independent color filter layer in the traditional display panel 10, simplifies the panel structure, and reduces manufacturing processes and material costs. Furthermore, since the color filter is formed based on the existing color filter stacking structure 404, it has a high degree of consistency with the color filter stacking structure 404 used for the photosensitive opening 405 in terms of process, thereby realizing the integration of light blocking, light filtering and photosensitive area 503 definition, further optimizing the overall structure of the panel, reducing the risk of light leakage, and improving the integration and reliability of the display panel 10. This application further proposes that, in the light-shielding layer 40, the color resist stacking structure 404 corresponding to the sub-pixel and the color resist stacking structure 404 corresponding to the sensing unit have the same color resist stacking order.

[0056] The color resist stacking structure 404 can be formed by any combination or all of the red, green, and blue color resist layers stacked in a specific order. The color resist stacking structure 404 corresponding to the sensing unit is located above the photosensitive area 503, and its main function is to precisely define the photosensitive opening 405 of the photosensitive area 503. By finely controlling the opening edge of the color resist stacking structure 404, a light-transmitting area 406 can be formed, thereby allowing external light to be effectively received by the photosensitive area 503. The color resist stacking structure 404 corresponding to the sub-pixel can have the same color resist stacking order as the color resist stacking structure 404 corresponding to the sensing unit. This means that throughout the entire light-shielding layer 40, whether used for the sub-pixel area or the photosensitive area 503, the deposition or formation order of the various color resist layers constituting the color resist stacking structure 404 (e.g., the first color resist layer 401, the second color resist layer 402, and the third color resist layer 403) is completely consistent. For example, if the stacking order of the photosensitive areas 503 is from bottom to top "first color resist layer 401 - second color resist layer 402 - third color resist layer 403", then the stacking order of the sub-pixel areas must also be "first color resist layer 401 - second color resist layer 402 - third color resist layer 403". This consistency can be achieved by using a uniform photolithography and deposition process in the same manufacturing batch, or by pre-designing a uniform mask and process flow, thereby avoiding the complexity of using different process flows for different areas.

[0057] Specifically, in the same display panel 10, the color resist stacking structure 404 corresponding to the sub-pixel and the color resist stacking structure 404 located in the photosensitive area 503 have the same color resist stacking order, but there are differences in the stacking scheme.

[0058] The color resist stacking structure 404 corresponding to the sub-pixel includes a first color resist layer 401, a second color resist layer 402, and a third color resist layer 403 stacked sequentially from the back side of the display panel 10 to the light-emitting surface; in the color resist stacking structure 404 corresponding to the red sub-pixel R, the opening edge of the second color resist layer 402 is closer to the center of the sub-pixel than the opening edge of the first color resist layer 401.

[0059] The color resist stacking structure 404 located in the photosensitive area 503 includes a first color resist layer 401, a second color resist layer 402, and a third color resist layer 403 stacked sequentially from the back side of the display panel 10 to the light-emitting surface; the second color resist layer 402 covers the surface of the first color resist layer 401 and covers the side of the first color resist layer 401 to one side of the bottom of the color resist stacking structure 404; the opening edge of the second color resist layer 402 is closer to the center of the photosensitive opening 405 than the opening edge of the third color resist layer 403.

[0060] See also Figure 6This application further proposes a display panel 10, wherein the light-shielding layer 40 includes a conventional display area 501, a privacy display area 502, and a photosensitive area 503; the light-shielding layer 40 includes a first light-filtering opening 407 located in the conventional display area 501 and a second light-filtering opening 408 located in the privacy display area 502, wherein the light-filtering aperture of the second light-filtering opening 408 is smaller than the light-filtering aperture of the first light-filtering opening 407; the aperture of the photosensitive opening 405 corresponding to the photosensitive area 503 is smaller than the light-filtering apertures of the first light-filtering opening 407 and the second light-filtering opening 408.

[0061] Specifically, the conventional display area 501 refers to the area in the display panel 10 used to provide a standard display effect, designed to ensure a wide viewing angle and sufficient brightness. The privacy display area 502 refers to the area in the display panel 10 where the viewing angle needs to be limited to protect privacy; it reduces the effective viewing angle through specific optical design. The photosensitive area 503 refers to the area in the display panel 10 that receives light from the photosensitive unit 301, used to receive external light signals to achieve specific functions, such as fingerprint recognition or ambient light sensing. These areas can be physically divided on the display panel 10, or their functions can be switched in different modes through software control.

[0062] The first light-filtering opening 407 is a light-filtering structure located within the conventional display area 501. Its large aperture ensures normal display performance in the conventional display area 501, providing a wide viewing angle and sufficient brightness. The second light-filtering opening 408 is a light-filtering structure located within the privacy display area 502. Its aperture is smaller than that of the first light-filtering opening 407. By reducing the aperture, the second light-filtering opening 408 limits the angle of light emission, thus achieving a privacy effect, ensuring that the displayed content can only be clearly seen from a specific viewing angle. The photosensitive area 503 corresponds to the aperture of its photosensitive opening 405, which is smaller than the apertures of both the first and second light-filtering openings 407 and 408. This photosensitive opening 405 allows external light to enter the photosensitive area 503, and its size is precisely designed to match the size and light-sensing requirements of the photosensitive area 503. The filter aperture refers to the size of the opening in the color resist layer that allows light to pass through. It directly determines the emission area and angle of the light, thus affecting the display brightness, viewing angle, and privacy protection effect.

[0063] This application further proposes a display panel 10, which includes a first transparent organic layer 701 located above a light-shielding layer 40; wherein, a first black light-shielding layer 601 is disposed above the first transparent organic layer 701 corresponding to the privacy display area 502, the first black light-shielding layer 601 forms a first privacy opening 603, and the first privacy opening 603 is equal to the filter aperture of the second light-filtering opening 408.

[0064] The first transparent organic layer 701 is located above the light-shielding layer 40. Its function is to provide a stable structural foundation for subsequent layers and ensure the transparency of the optical path. It can be achieved using a variety of transparent materials. For example, it can be a glass substrate, providing excellent flatness and mechanical strength; or it can be a transparent polymer film, such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), which has good flexibility and thinness; or it can be a transparent resin layer, such as acrylic resin or epoxy resin, formed by coating and curing.

[0065] The first black light-blocking layer 601 is disposed above the first transparent organic layer 701 corresponding to the privacy display area 502. Its function is to further block light to enhance the privacy effect. This layer can be composed of a variety of materials with high light-blocking performance. For example, it can be a black resin material containing black dye or pigment, formed by photolithography; or it can be black photoresist, which can be directly patterned by exposure and development; in addition, it can be a blackened metal layer, such as chromium (Cr) or molybdenum (Mo), which can be patterned by sputtering or evaporation.

[0066] The first privacy opening 603 is formed in the first black light-shielding layer 601, and its function is to precisely define the light-emitting area of ​​each pixel within the privacy display area 502. The opening can be formed in ways including but not limited to: precisely defining its shape and size through photolithography and etching processes; or, forming the desired opening pattern directly on the black light-shielding layer 40 through laser ablation technology.

[0067] By designing the size of the first privacy opening 603 to be smaller than or equal to the aperture of the second light-filtering opening 408, the first black light-blocking layer 601 can more strictly restrict light. This means that even though the second light-filtering opening 408 has already initially restricted light, the first black light-blocking layer 601 can further narrow the light-emitting angle, thereby effectively preventing light from leaking from a large angle and further enhancing the privacy protection capability of the privacy display area 502.

[0068] This application further proposes that it also includes a second transparent organic layer 702 located above the first transparent organic layer 701; wherein, the second transparent organic layer 702 is provided with a second black light-blocking layer 602 above the privacy display area 502, and the second black light-blocking layer 602 forms a second privacy opening 604, which is equal to the first privacy opening 603.

[0069] Specifically, the second transparent organic layer 702 is a transparent material layer with a certain thickness and mechanical strength. Its function is to provide a flat deposition surface for the functional layer formed on top of it, and to act as an optical medium, while increasing the mechanical stability of the overall structure. This second transparent organic layer 702 can be implemented in various ways. The second black light-shielding layer 602 is an opaque black material layer. Its main function is to block light from passing through, thereby achieving the function of light shielding or defining an opening, further restricting the light emission path, reducing light leakage, and enhancing the privacy effect. The second privacy opening 604 is a hole of a specific shape and size formed on the second black light-shielding layer 602, allowing light to pass through. It is formed through precise photolithography and etching processes and works in conjunction with the first privacy opening 603 to jointly define the final light emission path and viewing angle, further converging the light. The design of the second privacy opening 604 is equivalent to that of the first privacy opening 603, aiming to ensure that the second black light-shielding layer 602 can further restrict the light path defined by the first black light-shielding layer 601.

[0070] This double-layer light-shielding design makes up for the shortcomings of the single-layer structure, ensuring that the light control of the privacy display area 502 is more rigorous and efficient, thereby significantly improving the privacy performance of the display panel 10 without affecting the display performance. This application discloses a display device, including as follows: Figures 1-6 The display panel 10 shown.

[0071] The display device of this application, by integrating the aforementioned display panel 10, can directly utilize the design of the light-shielding layer 40 of the display panel 10. Specifically, the light-shielding layer 40 of the display panel 10 includes a first color resist layer 401, a second color resist layer 402, and a third color resist layer 403 of different colors, which are stacked to form a color resist stacking structure 404. A photosensitive opening 405 is provided in the light-shielding layer 40 corresponding to the photosensitive area 503, and the color resist stacking structure 404 defines the photosensitive opening 405. Specifically, in the photosensitive area 503, the opening edge of the second color resist layer 402 is closer to the center of the photosensitive opening 405 than the opening edges of the other color resist layers, and the second color resist layer 402 has a higher transmittance for light in the @550nm wavelength band than the other color resist layers. This design effectively solves the problem of light leakage from the photosensitive opening 405 caused by the difficulty in achieving flush opening edges of the color resist layers in existing BM Less processes. Meanwhile, a photosensitive opening 405 is formed in the photosensitive area 503 using a color resist stacking structure 404. The opening edge of the color resist layer with higher transmittance for 550nm wavelength in the color resist stacking structure 404 is selectively positioned closer to the center of the photosensitive opening 405 than the opening edges of other color resist layers. The extension of the opening edge of this color resist layer relative to the opening edges of other color resist layers is a light-transmitting area 406. This light-transmitting area 406 effectively increases the light-receiving area of ​​the photosensitive opening 405. At the same time, the transmittance of this light-transmitting area 406 is comparable to that of other color resist layers for 940nm wavelength. Therefore, without affecting the transmittance of 940nm wavelength, the photosensitive opening 405 has a larger light-transmitting area, thereby achieving a better photosensitive effect.

[0072] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0073] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0074] The embodiments, implementation methods, and related technical features of this application can be combined and substituted for each other without conflict.

[0075] The above are merely preferred embodiments of this application and are not intended to limit this application in any way. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of this application without departing from the scope of the technical solution of this application shall still fall within the scope of the technical solution of this application.

Claims

1. A display panel, characterized in that, Including the display area and the photosensitive area; Array functional layer; A light-emitting functional layer, located above the array functional layer, includes multiple sub-pixels arrayed in the display area and the sensing area; A light-shielding layer is located on the side of the light-emitting functional layer facing the light-emitting surface of the display panel; the light-shielding layer includes a first color resist layer, a second color resist layer and a third color resist layer of different colors, and at least a portion of the first color resist layer, the second color resist layer and the third color resist layer are stacked to form a color resist stack structure. The light-shielding layer has a photosensitive opening at the position corresponding to the photosensitive area, and the color resist stacking structure defines the photosensitive opening; In the photosensitive area, the opening edge of the second color resist layer is closer to the center of the photosensitive opening than the opening edges of other color resist layers, and the transmittance of the second color resist layer for light in the @550nm band is greater than that of other color resist layers.

2. The display panel according to claim 1, characterized in that, The second color resist layer is a green color resist layer, the first color resist layer is either a red color resist layer or a blue color resist layer, and the third color resist layer is the opposite of either a red color resist layer or a blue color resist layer. Wherein, the opening edge of the second color resist layer is closer to the center of the photosensitive opening than the opening edges of the first color resist layer and the third color resist layer, and the portion of the opening edge of the second color resist layer extending beyond the opening edges of the first color resist layer and the third color resist layer is a light-transmitting area, which is arranged around the photosensitive opening.

3. The display panel according to claim 2, characterized in that, In the color resist stacking structure, the second color resist layer is located on one side of the superposition layer of the first color resist layer and the third color resist layer.

4. The display panel according to claim 3, characterized in that, The superimposed layer of the first color resist layer and the third color resist layer is located on the side of the second color resist layer facing the light-emitting surface of the display panel; The opening edge of the second color resist layer is closer to the center of the photosensitive opening than the opening edge of the superimposed layer; The first color resist layer and the third color resist layer are flush with each other at their opening edges. Alternatively, the second color resist layer, the third color resist layer, and the first color resist layer are stacked sequentially from the light-shielding layer toward the light-emitting surface of the display panel. The opening edge of the second color resist layer is closer to the center of the photosensitive aperture than the opening edge of the third color resist layer, and the opening edge of the third color resist layer is closer to the center of the photosensitive aperture than the opening edge of the first color resist layer.

5. The display panel according to claim 3, characterized in that, The second color resist layer is located on the side of the superimposed layer of the first color resist layer and the third color resist layer facing the light-emitting surface of the display panel; The opening edge of the second color resist layer covers the surface of the stacked layer and wraps around the side of the stacked layer to one side of the bottom of the color resist layer stack structure.

6. The display panel according to claim 2, characterized in that, The second color resist layer is located between the first color resist layer and the third color resist layer; The second color resist layer is located on the side of the third color resist layer facing the light-emitting surface of the display panel, and the first color resist layer is located on the side of the second color resist layer away from the third color resist layer; The second color resist layer covers the surface of the third color resist layer and encloses the side portion of the third color resist layer to one side of the bottom of the color resist stack structure; The opening edge of the second color resist layer is closer to the center of the photosensitive opening than the opening edge of the first color resist layer.

7. The display panel according to claim 1, characterized in that, A color resist stacking structure is provided between adjacent sub-pixels, and one layer of the color resist stacking structure extends to the pixel opening corresponding to the sub-pixel.

8. The display panel according to claim 7, characterized in that, In the light-shielding layer, the color resist stacking structure corresponding to the sub-pixel and the color resist stacking structure located in the photosensitive area have the same color resist stacking order.

9. The display panel according to claim 8, characterized in that, The color resist stacking structure corresponding to the sub-pixel includes a first color resist layer, a second color resist layer, and a third color resist layer stacked sequentially from the back side of the display panel to the light-emitting surface. In the color resist stacking structure corresponding to the red sub-pixel, the opening edge of the second color resist layer is closer to the center of the sub-pixel than the opening edge of the first color resist layer.

10. The display panel according to claim 9, characterized in that, The color resist stacking structure located in the photosensitive area includes a first color resist layer, a second color resist layer, and a third color resist layer stacked sequentially from the back side of the display panel to the light-emitting surface. The second color resist layer covers the surface of the first color resist layer and wraps around the side of the first color resist layer to one side of the bottom of the color resist stack structure; the opening edge of the second color resist layer is closer to the center of the photosensitive opening than the opening edge of the third color resist layer.

11. The display panel according to claim 8, characterized in that, The display area includes a regular display area and a privacy display area; The light-shielding layer includes a first light-filtering opening located in the conventional display area and a second light-filtering opening located in the privacy display area, wherein the aperture of the second light-filtering opening is smaller than the aperture of the first light-filtering opening. The aperture of the photosensitive opening is smaller than the apertures of the first filter opening and the second filter opening.

12. The display panel according to claim 11, characterized in that, Includes a first transparent organic layer located above the light-shielding layer; The first transparent organic layer is provided with a first black light-blocking layer above the privacy display area. The first black light-blocking layer forms a first privacy opening, and the first privacy opening is smaller than or equal to the aperture of the second light-filtering opening.

13. The display panel according to claim 12, characterized in that, It also includes a second transparent organic layer located above the first transparent organic layer; The second transparent organic layer is provided above the privacy display area with a second black light-blocking layer, and the second black light-blocking layer forms a second privacy opening, which is equal to the first privacy opening.

14. The display panel according to claim 1, characterized in that, The first, second, and third color resist layers have comparable transmittance for light in the @940nm wavelength band.

15. A display device, characterized in that, Includes the display panel as described in any one of claims 1 to 14.

Images