Resistant coating comprising inorganic sealant and resistant particles

Abstract

The component includes a body and a coating deposited on the surface of the body. The coating includes porous ceramic. The coating further includes an inorganic sealant containing phosphate groups. The coating further includes a plurality of particles disposed within the inorganic sealant.

Description

Technical Field

[0001] The embodiments of this disclosure generally relate to chamber components having a plasma-resistant protective coating. Background Technology

[0002] In the semiconductor industry, components are manufactured using multiple processes that produce structures of ever-decreasing size. Some manufacturing processes, such as plasma etching and plasma cleaning, expose substrates to high-speed plasma streams to etch or clean them. The plasma can be highly corrosive and may corrode the processing chambers and other surfaces exposed to it. Summary of the Invention

[0003] The following is a brief overview of this disclosure to provide a basic understanding of some aspects thereof. This disclosure is not a broad summary of the present disclosure. It is not intended to identify key or essential elements of the disclosure, nor to describe any category of specific embodiments of the disclosure or any category of the claims. Its sole purpose is to present some concepts of the disclosure in a simplified form as a prelude to the more detailed description that follows.

[0004] In some aspects, a component is provided. In some aspects, the component includes a body and a coating deposited on a surface of the body. In some aspects, the coating includes a porous ceramic and an inorganic sealant that at least partially fills the pores in the porous ceramic. In some aspects, a plurality of particles are disposed within the inorganic sealant.

[0005] In some aspects, a method is provided. In some aspects, the method includes forming a porous ceramic coating on a surface of a chamber component of a processing chamber, and having an inorganic sealant precursor at least partially fill one or more pores in the porous ceramic coating. In some aspects, the inorganic sealant precursor includes a solvent, an inorganic sealant, and a plurality of particles. In some aspects, the method further includes curing the inorganic sealant precursor to produce an inorganic sealant within one or more pores.

[0006] In some aspects, a substrate processing chamber is provided. In some aspects, the substrate processing chamber includes components. In some aspects, the components include a metal body and a coating deposited on the surface of the metal body. In some aspects, the coating includes porous ceramic, an inorganic sealant, and a plurality of particles disposed within the inorganic sealant. Attached Figure Description

[0007] The aspects and embodiments of this disclosure can be more fully understood from the detailed description and accompanying drawings provided below, which are intended to illustrate the aspects and embodiments by way of example rather than limitation.

[0008] Figure 1This is a top view schematic diagram of an example processing system according to some embodiments of the present disclosure.

[0009] Figure 2 According to some embodiments of this disclosure Figure 1 A cross-sectional view of an exemplary processing chamber of the system, the processing chamber having one or more chamber components, the chamber components being coated with a durable coating comprising an inorganic sealant and durable particles.

[0010] Figure 3A A coated article having a body and a coating is shown according to some embodiments.

[0011] Figure 3B A coated article comprising a body and multiple coatings according to some embodiments is shown.

[0012] Figure 4 An example architecture of a deposition system for performing aerosol or thermal spray deposition is shown according to some embodiments.

[0013] Figure 5 An apparatus for performing plasma electrolytic oxidation (PEO) according to some embodiments is shown.

[0014] Figures 6A to 6B The diagram illustrates a mechanism and apparatus for performing deposition techniques using high-energy particles, according to some embodiments.

[0015] Figure 7 A schematic diagram of a plasma spray deposition apparatus for spray deposition technology is shown, according to some embodiments.

[0016] Figure 8 This is a flowchart of a method for producing a coating comprising an inorganic sealant and durable particles, according to some embodiments. Detailed Implementation

[0017] While plasma can be used for etching and cleaning, it can also cause significant damage to chamber components if not properly managed. This damage can manifest as surface roughening, cracking, or even chemical changes in the substrate. All of these surface roughening, cracking, or chemical changes can lead to particles falling onto the treated substrate and potentially severely impairing the quality and performance of the ultimately manufactured semiconductor device. Therefore, applying a plasma-resistant coating to the chamber components used in manufacturing is a protective measure to ensure the integrity of the chamber components and the reliability of the devices being manufactured (e.g., semiconductor devices, display devices, photovoltaic devices, etc.).

[0018] This document describes methods, systems, apparatus, etc., relating to providing a durable coating for components of a manufacturing system, such as a substrate manufacturing system, semiconductor wafer manufacturing equipment, or the like. The durable coating described herein may include a porous coating, such as a ceramic layer, the ceramic layer including features providing pathways for molecular migration into regions within the durable coating. The durable coating described herein may include a sealant disposed within the pores of the porous coating. The durable coating described herein may further include durable particles within the sealant disposed within the pores of the porous coating.

[0019] Substrates are processed and / or manufactured in one or more processing chambers. Each processing chamber can identify the processing environment (e.g., the spatial region within which the substrate is processed) and distinguish the processing environment from its surrounding conditions. For example, substrate processing can be performed under controlled pressure, under a controlled gas mixture, under vacuum, etc. Substrates can be processed to meet target conditions, target performance metrics, target substrate properties, etc.

[0020] Substrate processing may include exposing the substrate to a corrosive environment, such as a plasma environment, a dry etching environment, a chemical etching environment, or a similar environment. One or more components of the substrate processing chamber may also be exposed to a corrosive environment. The components of the substrate processing chamber may be composed of materials susceptible to the various corrosive environments used in substrate processing. One or more coatings may be applied to the components of the processing chamber, for example, coatings resistant to the corrosive environment to be generated in the processing chamber. The coating may be a ceramic, a metal oxide, or another material resistant to the corrosive environment in which the components are exposed.

[0021] Various deposition methods can be used to apply protective coatings. Some methods may produce coatings that are uneven in thickness, quality, porous, or the like. As used herein, "porous" refers to substances, materials, coatings, components, or the like including channels, shafts, cracks, gaps, voids, pores, and / or other defects that allow fluids to permeate beyond the outer surface and potentially into deeper regions of the component beneath the porous layer. In some cases, further coating operations may be performed to protect the material exposed due to the porous nature of the coating. For example, different deposition methods may be used to apply the coating, different materials may be applied, and / or inorganic sealants that penetrate into the pores of the coating may be applied.

[0022] In some systems, coating methods can be used to produce non-porous coatings. For example, atomic layer deposition (ALD) can produce non-porous coatings that are independent of direct-view deposition. However, this technique has other disadvantages. The cost of performing techniques to produce non-porous coatings can be high. For example, coating by ALD can include hours or days of coating operations to produce a thin layer of coating material. Compared to techniques such as ALD, methods for producing porous coatings can have advantages such as relative ease, low cost, and quality in terms of coating thickness and robustness. Furthermore, non-porous coatings typically have higher residual stress, which increases with thickness, thus limiting thickness.

[0023] Using a second coating material to compensate for coating porosity has drawbacks. In some cases, the second coating material may be selected based on its ability to penetrate the pores of the porous coating material, and the material properties of the second coating material may not be as suitable for corrosion resistance as those of the first coating material. The selection of the second material may be limited by factors such as coverage, interfacial strength with the porous coating material, mechanical integrity, and others, which may lead to the selection of materials with lower corrosion resistance than the first material, materials that may damage the processing environment or substrate, or components that age or change when exposed to corrosive environments.

[0024] The systems and methods disclosed herein address one or more drawbacks of conventional systems. In some embodiments, a protective coating is applied to a body. The body may be a metal, such as aluminum. The body may be a component of a processing chamber, such as a chamber liner, a plasma screen, a cathode sleeve, or another component of the processing chamber. The protective coating may be applied by a variety of methods, such as physical vapor deposition (PVD), plasma electrolytic oxidation (PEO), thermal spraying or plasma spraying, chemical vapor deposition, anodizing, or another coating application method. The protective coating may be a metal oxide, a ceramic material, or another resistive coating material. In embodiments, the protective coating may have a thickness of 20 µm to 500 µm or similar. In embodiments, the protective coating may be porous (e.g., including channels, cracks, gaps, voids, pores, or the like).

[0025] In some embodiments, an inorganic sealant precursor is coated onto a porous coating. In some embodiments, the inorganic sealant precursor may comprise an inorganic sealant containing phosphate groups, such as aluminum phosphate, zinc phosphate, magnesium phosphate, manganese phosphate, or any other similar inorganic sealant containing phosphate groups. In embodiments, the inorganic sealant precursor may be an inorganic sealant containing phosphate groups dissolved in a solvent. In embodiments, the inorganic sealant precursor may comprise a solvent, such as deionized (DI) water, ethanol, methanol, or any other similar solvent used for inorganic sealants.

[0026] In embodiments, the inorganic sealant precursor may penetrate into the pores of the protective coating. The inorganic sealant precursor may cure into an inorganic sealant (e.g., by applying heat, a low-humidity environment, etc.). The inorganic sealant may penetrate the surface of the porous coating to a depth of about 500 µm, to a depth of 10 µm to 500 µm, or similar depth. In some embodiments, the inorganic sealant completely penetrates the coating (e.g., from the top to the bottom of the coating). The inorganic sealant precursor may be selected to cure into an inorganic sealant under ambient conditions (e.g., atmospheric conditions). The inorganic sealant may cure upon mixing with an agent, applying heat, varying pressure, or other curing methods. In some embodiments, the inorganic sealant precursor may cure at a temperature equal to or below 350 degrees Celsius (i.e., the protective coating may be sealed).

[0027] Inorganic sealant precursors may include particles of a resistant material, such as corrosion-resistant materials, plasma-resistant materials, etc. In some embodiments, the particles may be nanoparticles of the resistant material, for example, with a diameter between 10 nm and 100 nm, such as an average particle size between 10 nm and 100 nm. The particles may be ceramic materials, metal oxide materials, or the like. The particles may be yttrium oxyfluoride, yttrium fluoride, alumina, yttrium oxide, magnesium oxide, or another resistant material. The particles may be included in the sealant precursor, and once the inorganic sealant precursor has cured, they may be included in the inorganic sealant. The particles may impart additional resistance to corrosive environments to the inorganic sealant (e.g., a sealant with particles has greater resistance to corrosive environments than the same sealant without resistant particles). In some embodiments, the particles have the same material as the porous coating (e.g., the same rare earth oxides and / or metal oxides). In some embodiments, the particulate material is different from the material of the porous coating.

[0028] In some embodiments, the inorganic sealant precursor may be applied in multiple operations (which may or may not include a curing operation between coatings). Different inorganic sealant precursors with different properties may be selected for different coatings of the precursor. For example, a first coating may include a low concentration of resistant particles (or no particles), a second coating may include a higher concentration of resistant particles, a third coating may include an even higher concentration of resistant particles, and so on. In some embodiments, the inorganic sealant precursor may be coated onto a porous coating, and after coating the inorganic sealant precursor, multiple resistant particles may be coated onto the inorganic sealant precursor.

[0029] Compared to conventional methods, the methods and systems of this disclosure offer technical advantages. Compared to other coating methods, the coating operation according to this disclosure can shorten coating time, reduce coating costs, and lower costs for coating equipment and reagents. Coated articles can be produced using a convenient coating method. Compared to unsealed coatings, coating with an inorganic sealant impregnated with resistive particles (e.g., ceramic nanoparticles) improves the protection of the coated component. Including resistant particles in the inorganic sealant can enhance the sealant's durability, reduce the frequency and / or severity of sealant cracking, and reduce the frequency and / or severity of contamination of the substrate or substrate processing chamber, etc.

[0030] Compared to unsealed coatings, coatings containing inorganic sealants with phosphate groups (e.g., aluminum phosphate, zinc phosphate, magnesium phosphate, manganese phosphate, etc.) offer improved protection for coated components. For example, conventional organic sealants are typically limited in their ability to chemically interact with oxide layers (e.g., oxide layers formed from yttrium oxide (Y₂O₃)). Organic sealants may adhere to oxide layers primarily through hydrogen bonding, where a hydrogen atom covalently bonded to an electronegative atom exhibits attraction to another electronegative atom on the oxide surface. While such bonds contribute to maintaining coating integrity to some extent, they are inherently relatively weak and can be susceptible to environmental factors such as humidity and temperature fluctuations. Organic sealants lack the ability to form the stronger ionic and covalent bonds characteristic of phosphate-containing inorganic sealants. Conversely, phosphate groups can be highly reactive due to their ability to donate or accept electrons, thus promoting the formation of one or more types of atomic bonds.

[0031] The phosphate groups within the sealant can form strong ionic bonds with metal cations present on the oxide layer surface. These ionic bonds are generated by the electrostatic attraction between positively charged metal ions on the oxide surface and negatively charged oxygen atoms in the phosphate groups. Due to the charge difference and the proximity of the ions, these ionic bonds are inherently strong. In this way, the inclusion of phosphate groups generates significant electrostatic attraction, greater adhesion to the phosphate layer, and enhanced sealing performance.

[0032] In some embodiments, phosphate groups may be covalently bonded to metal atoms in the oxide layer. In these embodiments, covalent bonds are formed when electrons are shared between the phosphate groups and the metal atoms, resulting in highly oriented and strong bonds that contribute to the overall structural integrity of the seal.

[0033] Therefore, due to the specific chemical properties of each sealant type, the bond strength formed by these phosphate-based inorganic sealants is superior to that achieved using organic sealants. Organic sealants lack the ability to form the stronger ionic and covalent bonds characteristic of phosphate-based inorganic sealants. Thus, phosphate-based inorganic sealants provide sealing coatings with greater resistance to chemical attack, thermal degradation, and physical abrasion. This sealing, in turn, translates into a significant improvement in the lifespan and reliability of yttrium oxide protective coatings under harsh operating conditions. Therefore, the use of phosphate-based inorganic sealants may prove beneficial in protective applications where durability and resistance are critical.

[0034] Figure 1 This is a top view schematic diagram of an example processing system 100 according to some embodiments of the present disclosure.

[0035] In an embodiment, Figure 1 The processing system 100 may be a substrate processing system. The processing system 100 may include substrate processing equipment (e.g., substrate processing tools, physical components for substrate processing operations) and one or more computing devices (e.g., processing devices). The processing system 100 may include a transfer chamber robot 101 and a factory interface robot 121, each of which is adapted to transfer from or to an electronic component processing system (such as...). Figure 1 The processing system 100 shown depicts the destination pickup and placement of substrate 110 (sometimes referred to as a "wafer" or "semiconductor wafer"). In embodiments, any type of electronic component substrate, mask, or other silicon dioxide-containing substrate (generally referred to herein as a "substrate") can be transferred and moved by the disclosed robot. For example, the destination of substrate 110 can be one or more of chambers 103 and / or load-locking devices 107A, 107B, which can be distributed around and coupled to transfer chamber 114. As shown, substrate transfer can be performed, for example, via slit valve 111. Chamber 103 may include processing chambers, metering chambers, lithography chambers, annealing chambers, deposition chambers, etching chambers, etc.

[0036] The processing system 100 may further include a host 102, which includes a transfer chamber 114 and a plurality of chambers 103. The housing of the host 102 includes the transfer chamber 114 located therein. The transfer chamber 114 may include a top wall (not shown), a bottom wall (base plate) 139, and side walls, and may include a controlled environment. The controlled environment may include vacuum conditions, controlled pressure (e.g., different from ambient atmospheric pressure), a controlled gas environment (e.g., an inert gas, such as argon or nitrogen, or a gas mixture), or the like. In the illustrated embodiment, the transfer chamber robot 101 may be mounted on the bottom wall (base plate) 139. However, the transfer chamber robot 101 may be mounted elsewhere, such as on the top wall.

[0037] In various embodiments, chamber 103 can be adapted to perform any number of processes on substrate 110. These processes may include deposition, oxidation, nitration, etching, polishing, cleaning, photolithography, metrology (e.g., integrated metrology), etc. Chamber 103 may include components for performing the desired functions of chamber 103, for providing protection to other components of chamber 103, etc. For example, the chamber may include chamber liner 124, plasma mask, cathode sleeve, spray head, etc., for delivering process gases, protecting host 102 from corrosive gas environments used to process the substrate, and other functions. Any combination of chambers 103 may include one or more liner components; for clarity, Figure 1 The chamber liner 124 is shown, while other components are omitted. According to embodiments of this disclosure, any component of the processing system 100 that can benefit from protection against corrosive environments may have a coating comprising an inorganic sealant with resistant particles. For example, according to aspects of this disclosure, slit valve 111 (e.g., a protective liner, slit door liner, or the like), processing chamber liner, plasma shield, cathode sleeve, spray head, and other components may be coated with a resistant coating comprising inorganic sealant and resistant particles.

[0038] Other processes may also be implemented in this embodiment. Load lock devices 107A, 107B may be adapted to connect to a factory interface 117 or other system components that can receive substrate 110 from a substrate carrier 119 (e.g., a front-opening unified pod; FOUP) that can dock at a loading port of the factory interface 117. A factory interface robot 121 (shown in dashed lines) may be used to transfer substrate 110 between the substrate carrier 119 and each load lock device 107A, 107B. The transfer of substrate 110 may be performed in any order or direction. In some embodiments, the factory interface robot 121 may be the same as (or similar to) the transfer chamber robot 101, but may further include mechanisms that allow the factory interface robot to move in any of the lateral directions indicated by arrow 123. Any other suitable robot may be used as the factory interface robot 121. In some embodiments, system 100 may be coupled to a metering system, such as an integrated metering system, an online metering system, etc. (e.g., interfaced with it).

[0039] In this embodiment, and through exemplary illustration of any robot, the transfer chamber robot 101 includes at least one arm 113 (e.g., a robotic arm) and at least one end effector 115 coupled to the arm 113. The end effector 115 may be controlled by the transfer chamber robot 101 to pick up a substrate 110 from a load-locking device 107A or 107B, guide the substrate 110 through a slit valve 111 of the chamber 103, and precisely place the substrate 110 onto a substrate support of the chamber 103. In some embodiments, the end effector 115 may include blades for supporting the substrate 110. In some embodiments, the end effector 115 may support a first portion of the substrate 110, for example, it may be annular, such that a portion of the substrate 110 is visible from the bottom when the substrate 110 is supported by the end effector 115.

[0040] Any substrate transfer system (e.g., a robot) may include one or more motors for moving at least a portion of the transfer system. For example, motors may be used to extend one or more arms to transfer substrates in and out of various processing chambers, metering chambers, load-locking chambers, or similar chambers. Motors may be used to enable the factory interface robot 121 to travel linearly between various substrate carriers 119.

[0041] In some embodiments, other robots may be present in one or more of the chambers 103. For example, a chamber including one or more metrology devices may include a platform for moving a substrate within the metrology devices. The platform may be used to adjust a portion of the substrate within the field of view of the metrology devices. In some embodiments, one or more motors may be associated with the platform. The one or more motors associated with the platform may be linear motors. For example, a metrology system may include a platform having a linear motor for generating linear motion of the substrate and a rotary motor for generating rotational motion of the substrate.

[0042] Controller 109 (e.g., a tool and equipment controller) controls various aspects of processing system 100, such as gas pressure in chamber 103, single gas flow rate, space flow ratio, temperature of various chamber components, and radio frequency (RF) or electrical status of chamber 103. Controller 109 can receive signals and send commands to the factory interface robot 121, the chamber transfer robot 101, one or more sensors, and / or other processing components of processing system 100. Controller 109 can therefore control the start and stop of processing, adjust deposition rates, types, or mixing of deposition components, and the like. Controller 109 can further receive and process sensing data from various sensors, such as sensors associated with processing system 100, sensors of various motors generating position error data, sensors reporting conditions within one or more chambers of processing system 100, etc.

[0043] The controller 109 and / or processing device 130 may be and / or include computing devices, such as personal computers, server computers, programmable logic controllers (PLCs), microcontrollers, etc. The controller 109 and / or processing device 130 may include (or be) one or more processing devices, which may be general-purpose processing devices, such as microprocessors, central processing units, etc. More specifically, the processing device may be a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, or a processor implementing other instruction sets or a combination of instruction sets. The processing device may also be one or more special-purpose processing devices, such as application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), digital signal processors (DSPs), network processors, etc. The controller 109 and / or processing device 130 may include data storage devices (e.g., one or more disk drives and / or solid-state drives), main memory, static memory, network interface, and / or other components. The processing device 130 may execute instructions to perform any one or more of the methods and / or embodiments described herein. The instructions may be stored on a computer-readable storage medium, which may include main memory, static memory, secondary storage devices, and / or processing devices (during instruction execution).

[0044] In embodiments, controller 109 and / or processing device 130 may include one or more rule-based engines and / or trained machine learning models for controlling one or more load locks and / or cooling stations, and / or making decisions about the load locks and / or cooling stations. The one or more trained machine learning models may have been trained to receive sensor measurements from and / or associate with load lock devices, and to predict, classify, or determine the load lock devices. Each trained machine learning model may be associated with a different decision-making process of the load lock device station. Alternatively, one or more trained machine learning models may be associated with multiple decision-making processes of the load lock device.

[0045] In one embodiment, one or more of the trained machine learning models are regression models trained using regression. Instances of regression models are regression models trained using linear regression or Gaussian regression. Given known values ​​of variable X, the regression model predicts the value of Y. Regression analysis can be used to train the regression model, and this regression analysis may include interpolation and / or extrapolation. In one embodiment, least squares is used to estimate the parameters of the regression model. Alternatively, Bayesian linear regression, percentage regression, least absolute deviation, nonparametric regression, scene optimization, and / or distance metric learning can be performed to train the regression model.

[0046] In one embodiment, one or more trained machine learning models are decision trees, random forests, support vector machines, or other types of machine learning models.

[0047] In one embodiment, one or more of the trained machine learning models are artificial neural networks (also simply referred to as neural networks). Artificial neural networks may be, for example, convolutional neural networks (CNNs) or deep neural networks. In one embodiment, the processing logic performs supervised machine learning to train the neural network.

[0048] Artificial neural networks typically include feature representation components with classifier or regression layers that map features to a target output space. For example, a convolutional neural network (CNN) contains multiple layers of convolutional filters. Convergence is performed at lower layers, and nonlinearity can be addressed. Multiple perceptrons are typically attached to these lower layers, mapping the top-level features extracted by the convolutional layers to a decision (e.g., classification output). Neural networks can be deep networks with multiple hidden layers or shallow networks with zero or a few (e.g., one to two) hidden layers. Deep learning is a class of machine learning algorithms that use cascaded, multi-layered nonlinear processing units for feature extraction and transformation. Each subsequent layer uses the output of the previous layer as input. Neural networks can learn in a supervised (e.g., classification) and / or unsupervised (e.g., pattern analysis) manner. Some neural networks (e.g., deep neural networks) include hierarchical structures where different layers learn representations corresponding to different levels of abstraction. In deep learning, each level learns to transform its input data into a more abstract, comprehensive representation.

[0049] One or more trained machine learning models can be recurrent neural networks (RNNs). An RNN is a type of neural network that includes memory, enabling it to capture temporal dependencies. RNNs learn input-output mappings that depend on current and past inputs. They process past and future measurements and make predictions based on this continuous measurement information. For example, sensor measurements can be performed continuously in a process, and these sets of measurements can be sequentially fed into an RNN. Current and previous sensor measurements can influence the current output of the trained machine learning model. One type of RNN that can be used is a long short-term memory (LSTM) neural network.

[0050] Controller 109 is operatively connected to a server (not shown). The server may be or include a computing device operating as a plant server, which interfaces with some or all of the tools in the manufacturing facility. The server can perform training to generate a trained machine learning model and can send the trained machine learning model to controller 109 and processing device 130. Alternatively, the machine learning model can be trained on controller 109.

[0051] Neural networks can be trained using supervised learning methods. This training involves feeding the network a training dataset consisting of labeled inputs, observing its output, defining the error (by measuring the difference between the output and the labeled values), and using techniques such as deep gradient descent and backpropagation to tune the network weights of all layers and nodes to minimize the error. In many applications, repeating this process with many labeled inputs from the training dataset produces a network that can produce correct outputs when the network inputs differ from those in the training dataset. This generalization ability is achieved in high-dimensional scenarios, such as large images, when a sufficiently large and diverse training dataset is available.

[0052] Figure 2 According to some embodiments of this disclosure, Figure 1 A cross-sectional view of an exemplary processing chamber of a system, the processing chamber having one or more chamber components, the chamber components being coated with a durable coating comprising an inorganic sealant and durable particles.

[0053] In embodiments, the processing chamber 200 can be used in processes where components of the processing chamber 200 are exposed to corrosive environments, such as plasma environments, dry etching environments, chemical or wet etching environments, etc. The processing chamber 200 can be used in processes providing corrosive plasma environments with plasma processing conditions. For example, in embodiments, the processing chamber 200 can be a chamber for a plasma etcher or plasma etching reactor, plasma cleaner, etc. Examples of chamber components that may include such a durable coating include a substrate support assembly 204, an electrostatic chuck (ESC), a ring (e.g., a processing kit ring or a single ring), a chamber wall, a chamber liner, a base, a gas distribution plate, a spray head 206, a nozzle, a cover, a liner, a liner kit, a shield, a plasma shield, a flow equalizer, a cooling base, a chamber observation port, a chamber cover, etc. The coating applied to one or more components of the chamber may include inorganic and ceramic components.

[0054] In one embodiment, the processing chamber 200 includes a chamber body 208 and a spray head 206, each enclosing an internal volume 210. The spray head may include a spray head base and a spray head gas distribution plate. Alternatively, in some embodiments, the spray head 206 may be replaced by a cover and nozzle. The chamber body 208 may be made of aluminum, stainless steel, or other suitable materials. The chamber body 208 typically includes sidewalls 212 and a bottom 214. According to this disclosure, in embodiments, any of the spray head 206 (or cover and / or nozzle), sidewalls 212, and / or bottom 214 may include a corrosion-resistant coating.

[0055] An exhaust port 216 may be defined within the chamber body 208 and may couple the internal volume 210 to a pump system 218. The pump system 218 may include one or more pumps and a throttle valve for evacuating and regulating the pressure of the internal volume 210 of the processing chamber 200.

[0056] The spray head 206 may be supported on the sidewall 212 of the chamber body 208. The spray head 206 (or cover) may be opened to allow access to the internal volume 210 of the processing chamber 200 and may provide a seal to the processing chamber 200 when closed. A gas panel 220 may be coupled to the processing chamber 200 to provide processing and / or cleaning gases to the internal volume 210 through the spray head 206 or cover and nozzles. The spray head 206 is used in the processing chamber for dielectric etching (etching of dielectric materials). In an embodiment, the spray head 206 may include a gas distribution plate (GDP) having a plurality of gas delivery holes extending through the GDP. The spray head 206 may include the GDP bonded to an aluminum or anodized aluminum base. In an embodiment, the GDP may be made of Si or SiC, or may be a ceramic such as Y2O3, Al2O3, YAG, etc. The spray head 206 may include a durable coating, which includes a porous coating material, an inorganic sealant, and durable particles, such as durable nanoparticles.

[0057] For processing chambers used for conductor etching (etching of conductive materials), a cover can be used instead of a spray head. The cover may include a central nozzle fitted into a central hole in the cover. The cover may be a ceramic such as Al2O3, Y2O3, or YAG, or a ceramic compound comprising Y4Al2O9 and Y2O3-ZrO2 solid solutions. The nozzle may also be a ceramic, such as Y2O3, YAG, or a ceramic compound comprising Y4Al2O9 and Y2O3-ZrO2 solid solutions. According to one embodiment, the cover, spray head base, GDP, and / or nozzle may be coated with an arc- and plasma-resistant coating.

[0058] Examples of processing gases that can be used to process the substrate in processing chamber 100 include halogen-containing gases such as C2F6, SF6, SiCl4, HBr, NF3, CF4, CHF3, CH2F3, F, NF3, Cl2, CCl4, BCl3, and SiF4, as well as other gases such as O2 or N2O. Examples of carrier gases include N2, He, Ar, and other gases that are inert to the processing gases (e.g., non-reactive gases). A substrate support assembly 204 is disposed below the spray head 206 or cover within the internal volume 210 of processing chamber 200. The substrate support assembly 204 holds the substrate 202 during processing. A ring (e.g., a single ring) may cover a portion of the support assembly 204 (e.g., base 222) and protect the covered portion from exposure to plasma during processing. In one embodiment, the ring may be silicon or quartz. The substrate support assembly 204 may include a base 224 and a base 222.

[0059] Figure 3A A cross-sectional view of an exemplary coated article according to some embodiments of the present disclosure is shown.

[0060] Figure 3A A coated article 300A having a body 302 and a coating 304 is shown. In embodiments, the body 302 can be the body of any of a variety of chamber components, including but not limited to chamber liners, slit door liners, plasma shields, cathode sleeves, substrate support assemblies, electrostatic chucks (ESCs), rings (e.g., processing kit rings or single rings), chamber walls, bases, gas distribution plates, nozzles, caps, liners, liner kits, shielding elements, flow equalizers, cooling bases, chamber observation ports, chamber covers, etc. The body can be made of metals (such as aluminum, stainless steel, etc.), ceramics, metal-ceramic composites, inorganic materials, inorganic-ceramic composites, or other suitable materials.

[0061] Coating 304 can be applied by any coating method suitable for the intended use of the selected material, body 302, article 300A, or the like. For example, coating 304 can be provided by plasma electrolytic oxidation, thermal spraying or plasma spraying, physical vapor deposition or ion-assisted deposition, etc.

[0062] In some embodiments, the coating 304 applied directly to the body 302 may include holes, gaps, channels, cracks, or the like. Figure 3A As shown, the porosity of coating 304 allows corrosive environments to penetrate deeper into the coating portion below the coating surface. The porosity of coating 304 also allows corrosive environments to penetrate the body 302 beneath coating 304. In some embodiments, the method of applying coating 304, the material selected for coating 304, or the like can result in the porosity of coating 304. In some embodiments, the geometry and / or orientation of body 302 can result in the porosity of coating 304. For example, in physical vapor deposition (PVD) processes, surfaces at angles far from perpendicular to the incident direction of vapor deposition may exhibit increased porosity, columnar structures, increased gaps or cracks, or the like, in the coating.

[0063] In one embodiment, the porosity of the protective coating 304 may be less than 3%. In other embodiments, the porosity may be 1% to 3%, 1% to 5%, 1% to 15%, or another porosity range.

[0064] In embodiments, coating 304 may be any material that can produce a protective or durable coating on body 302. In embodiments, coating 304 may be a ceramic material. In embodiments, coating 304 may be a metal oxide material. Coating 304 may be a fluorine-containing material. Coating 304 may include ceramic materials (e.g., plasma-resistant ceramic materials), such as ceramic oxides (e.g., magnesium oxide MgO, yttrium oxide Y₂O₃-MgO stabilized with or combined with magnesium oxide, aluminum oxide Al₂O₃, yttrium oxide Y₂O₃, yttrium aluminum garnet Y₃A). l5 O 12 Yttrium aluminum perovskite (YAlO3), zirconium oxide (ZrO2), silicon dioxide (SiO2), Er2O3, ErAl x O y ,YAl x O y YZr x O y and YZr x Al y O z Gd₂O₃, Yb₂O₃, ZrO₂ stabilized by Y₂O₃ (YSZ), Er₃Al₅O 12 (EAG), Y2O3-ZrO2 solid solutions, or composite ceramics containing Y4Al2O9 and Y2O3-ZrO2 solid solutions, etc.), ceramic carbides (e.g., silicon carbide SiC, silicon-silicon carbide Si-SiC, boron carbide B4C, etc.), nitride-based ceramics (e.g., aluminum nitride AlN, silicon nitride SiN, etc.), yttrium fluoride YF3, yttrium oxyfluoride YOF, magnesium oxide, other ceramic materials, or combinations thereof. Additional examples of ceramic oxides that can be used in plasma-resistant coating 308 include yttrium-based oxides, erbium-based oxides, etc. Furthermore, ceramic fluorides and / or fluorine oxides can be used in plasma-resistant coating 308. Examples include YO... x F y YF3, etc.

[0065] In embodiments, coating 304 may have any suitable thickness, ranging from a few thousandths of an inch to a few hundredths of an inch. In embodiments, the thickness of coating 304 may be between 5µm and 10µm, between 10µm and 100µm, between 100µm and 200µm, or between 200µm and 250µm.

[0066] In one embodiment, the plasma-resistant coating 304 is or comprises a metal oxide coating comprising or consisting of a solid solution of magnesium oxide (MgO) or yttrium oxide (Y₂O₃-MgO) stabilized by or combined with magnesium oxide (e.g., a solid solution of yttrium oxide and magnesium oxide). In one embodiment, the Y₂O₃-MgO solid solution may comprise 20 mol% to 80 mol% of Y₂O₃ and 20 mol% to 80 mol% of MgO. In a further embodiment, the Y₂O₃-MgO solid solution comprises 30 mol% to 70 mol% of Y₂O₃ and 30 mol% to 70 mol% of MgO. In a further embodiment, the Y₂O₃-MgO solid solution comprises 40 mol% to 60 mol% of Y₂O₃ and 40 mol% to 60 mol% of MgO. In a further embodiment, the Y₂O₃-MgO solid solution comprises 50 mol% to 80 mol% of Y₂O₃ and 20 mol% to 50 mol% of MgO. In a further embodiment, the Y₂O₃-MgO solid solution comprises 60 mol% to 70 mol% of Y₂O₃ and 30 mol% to 40 mol% of MgO. In other examples, the Y₂O₃-MgO solid solution may comprise 45 mol% to 85 mol% of Y₂O₃ and 15 mol% to 60 mol% of MgO, 55 mol% to 75 mol% of Y₂O₃ and 25 mol% to 45 mol% of MgO, 58 mol% to 62 mol% of Y₂O₃ and 38 mol% to 42 mol% of MgO, and 68 mol% to 72 mol% of Y₂O₃ and 28 mol% to 32 mol% of MgO.

[0067] In an alternative embodiment, the plasma-resistant coating 304 is or comprises a metal oxide coating, said coating comprising or consisting of a solid solution of yttrium oxide and zirconium oxide (Y₂O₃-ZrO₂). In one embodiment, the Y₂O₃-ZrO₂ solid solution may comprise 20 mol% to 80 mol% of Y₂O₃ and 20 mol% to 80 mol% of ZrO₂. In a further embodiment, the Y₂O₃-ZrO₂ solid solution comprises 30 mol% to 70 mol% of Y₂O₃ and 30 mol% to 70 mol% of ZrO₂. In a further embodiment, the Y₂O₃-ZrO₂ solid solution comprises 40 mol% to 60 mol% of Y₂O₃ and 40 mol% to 60 mol% of ZrO₂. In a further embodiment, the Y₂O₃-ZrO₂ solid solution comprises 50 mol% to 80 mol% of Y₂O₃ and 20 mol% to 50 mol% of ZrO₂. In a further embodiment, the Y₂O₃-ZrO₂ solid solution comprises 60 mol% to 70 mol% of Y₂O₃ and 30 mol% to 40 mol% of ZrO₂. In other examples, the Y₂O₃-ZrO₂ solid solution may comprise 45 mol% to 85 mol% of Y₂O₃ and 15 mol% to 60 mol% of ZrO₂, 55 mol% to 75 mol% of Y₂O₃ and 25 mol% to 45 mol% of ZrO₂, 58 mol% to 62 mol% of Y₂O₃ and 38 mol% to 42 mol% of ZrO₂, and 68 mol% to 72 mol% of Y₂O₃ and 28 mol% to 32 mol% of ZrO₂.

[0068] In various embodiments, the plasma-resistant coating 304 may be made of Y3A. l5 O 12 (YAG), Y4Al2O9 (YAM), Er3Al5O 12 (EAG), Gd3Al5O 12 (GAG), YAlO3 (YAP), Er4A l2 O9 (EAM), ErAlO3 (EAP), Gd4Al2O9 (GdAM), GdAlO3 (GdAP), Nd3Al5O 12The coating 304 may also be composed of NdAG, Nd4Al2O9 (NdAM), NdAlO3 (NdAP), and / or ceramic compounds containing Y4Al2O9 and Y2O3-ZrO2 solid solutions. The durable coating 304 may also be an Er-Y composition (e.g., 80 wt% Er and 20 wt% Y), an Er-Al-Y composition (e.g., 70 wt% Er, 10 wt% Al, and 20 wt% Y), an Er-Y-Zr composition (e.g., 70 wt% Er, 20 wt% Y, and 10 wt% Zr), or an Er-Al composition (e.g., 80 wt% Er and 20 wt% Al). Note that wt% refers to weight percentage. Conversely, mole% is a molar ratio.

[0069] The durable coating 304 may also be based on a solid solution formed from any of the aforementioned ceramics. Regarding the ceramic compound comprising a Y4Al2O9 and Y2O3-ZrO2 solid solution, in one embodiment, the ceramic compound comprises 62.93 mol% (mol%) of Y2O3, 23.23 mol% of ZrO2, and 13.94 mol% of Al2O3. In another embodiment, the ceramic compound may comprise 50 mol% to 75 mol% of Y2O3, 10 mol% to 30 mol% of ZrO2, and 10 mol% to 30 mol% of Al2O3. In yet another embodiment, the ceramic compound may comprise 40 mol% to 100 mol% of Y2O3, 0 mol% to 60 mol% of ZrO2, and 0 mol% to 10 mol% of Al2O3. In another embodiment, the ceramic compound may include 40 mol% to 60 mol% of Y₂O₃, 30 mol% to 50 mol% of ZrO₂, and 10 mol% to 20 mol% of Al₂O₃. In another embodiment, the ceramic compound may include 40 mol% to 50 mol% of Y₂O₃, 20 mol% to 40 mol% of ZrO₂, and 20 mol% to 40 mol% of Al₂O₃. In another embodiment, the ceramic compound may include 70 mol% to 90 mol% of Y₂O₃, 0 mol% to 20 mol% of ZrO₂, and 10 mol% to 20 mol% of Al₂O₃. In yet another embodiment, the ceramic compound may include 60 mol% to 80 mol% of Y₂O₃, 0 mol% to 10 mol% of ZrO₂, and 20 mol% to 40 mol% of Al₂O₃. In another embodiment, the ceramic compound may include 40 mol% to 60 mol% of Y₂O₃, 0 mol% to 20 mol% of ZrO₂, and 30 mol% to 40 mol% of Al₂O₃. In other embodiments, other distributions may also be used in the ceramic compound.

[0070] Article 300A further includes a sealant layer 306. The sealant layer 306 may include a sealant disposed within pores of the coating 304. In some embodiments, the sealant layer 306 is not a layer separate from the coating 304. The sealant layer 306 may include an inorganic sealant disposed within pores, gaps, channels, or the like of the coating 304. The inorganic sealant disposing of the sealant layer 306 may include providing an inorganic sealant precursor to the coating 304. In embodiments, the inorganic sealant precursor may be a precursor that cures under different conditions, such as a mixed precursor in which a curing process is initiated by mixing two or more precursor components. The inorganic sealant precursor may cure in a target atmosphere, such as when exposed to certain pressure ranges, gas ranges, or temperature ranges. In embodiments, the inorganic sealant precursor may be cured using light of different wavelengths (e.g., ultraviolet light) or temperature, or any combination thereof.

[0071] The coating 304 can be applied using any technique suitable for depositing a thin layer of inorganic sealant on a substrate, such as aerosol coating, dip coating, blade coating, spin coating, brush coating, etc. In some embodiments, the sealant layer 306 may penetrate into substantially all accessible pores of the coating 304.

[0072] In some embodiments, the sealant layer 306 may penetrate the pore to a depth. The sealant may penetrate the pore to a depth of about 100 µm, from 50 µm to 200 µm, from 10 µm to 500 µm, or to another depth to the coating surface, or to the entire thickness of the protective coating. In some embodiments, the application of the sealant precursor may be performed under target ambient conditions, such as in a vacuum (e.g., removing gas from the pore before applying the inorganic sealant precursor), under pressure (e.g., applying pressure to force the sealant precursor into the pore), at high temperatures (e.g., to achieve or accelerate inorganic curing), or under other conditions.

[0073] In some embodiments, the material of the sealant layer 306 may be selected to interact with the processing gas used for the article 300A, thereby improving one or more properties of the sealant layer 306. For example, the sealant layer 306 may be selected to interact with the processing gas to cause the sealant layer 306 to expand, which may enable the sealant layer 306 to at least partially self-recover.

[0074] In embodiments, the sealing material may be or include aluminum phosphate, zinc phosphate, magnesium phosphate, zirconium phosphate, yttrium phosphate, manganese phosphate, phosphoric acid, or any other solution or solid or material comprising a phosphate group (such as phosphoric acid), or any other type of similar phosphate-based inorganic sealing material. In embodiments, the inorganic sealant precursor may be a mixture of the sealant material and a solvent. In some embodiments, the inorganic sealant precursor may be a mixture of the sealant material, the solvent, and water. In embodiments, the inorganic sealant precursor may include a solvent such as deionized (DI) water, ethanol, methanol, acetonitrile, tetrahydrofuran (THF), dimethylformamide (DMF), dimethyl sulfoxide (DMSO), or isopropanol (IPA).

[0075] In embodiments, the inorganic sealant precursor may be a mixture of sealant material, solvent, and metal salt. In embodiments, the inorganic sealant precursor may include aluminum hydroxide, aluminum nitrate, aluminum chloride, zinc hydroxide, zinc nitrate, zinc chloride, magnesium hydroxide, magnesium nitrate, magnesium chloride, manganese nitrate, manganese chloride, zirconium hydroxide, zirconium nitrate, zirconium chloride, yttrium hydroxide, yttrium nitrate, yttrium chloride, or any other similar metal salt used in inorganic sealants. (The inorganic sealant precursor may include components in hydrate form, such as hexahydrate form). In the embodiments, the inorganic sealant precursor may include Al(OH)3+H3PO4, Al(NO3)3+H3PO4, AlCl3+H3PO4, Zn(OH)2+H3PO4, Zn(NO3)3.H2O+H3PO4, ZnCl2+H3PO4, Mg(OH)2+H3PO4, Mg(NO3)3.H2O+H3PO4, MgCl2+H3PO4, Mn(NO3)3.H2O+H3PO4, MnCl2+H3PO4, Zr(OH)2+H3PO4, Zr(NO3)4.H2O+H3PO4, ZrCl4+H3PO4, Y(OH)3+H3PO4, Y(NO3)3+H3PO4, YCl3+H3PO4, or any other similar phosphate inorganic sealant precursor.

[0076] In the embodiments, the ratio of sealant material to solvent, expressed as a molar ratio, can be 1:2, 1:3, or 1:4.

[0077] In embodiments where alumina (or any other ceramic or metal oxide layer described above) is used as a protective layer and a phosphate-based inorganic sealant (as described above) is used as a sealing material, the molar ratio, atomic ratio, and / or weight ratio of phosphorus to metal may be 2:1, 3:1, or 4:1.

[0078] In embodiments, in addition to the sealant material and solvent, the inorganic sealant precursor may include particles 308 of the sealant layer 306. In embodiments, particles 308 may be a resistant material disposed within the sealant layer 306. For example, particles 308 may improve the resistance of coating 304 to corrosive environments compared to a coating having a sealant layer without resistant particles. Particles 308 may be a metal oxide material. Particles 308 may be a ceramic material. Particles 308 may be nanoparticles, such as ceramic nanoparticles. Particles 308 may be yttrium oxyfluoride, yttrium fluoride, yttrium oxide, alumina, magnesium oxide, silicon carbide, zirconium oxide, etc. Particles 308 may be the same material described in conjunction with coating 304. In some embodiments, the material of particles 308 may be the same as the material of coating 304 in which particles are disposed. In some embodiments, the material of particles 308 may be different from the material of coating 304.

[0079] The material of particle 308 may be selected, and said material will interact with the gas near article 300A to modulate the properties of particle 308. For example, particle 308 may be a material that interacts with the process gas, resulting in a change in the properties of particle 308. Size, hardness, density, or the like may be adjusted for the target properties of particle 308 upon introduction of the process gas. For example, particle 308 may be a material that expands upon exposure to the process gas (e.g., fluorine), which can improve the coating's resistance to corrosive (e.g., fluorine-containing) environments.

[0080] In some embodiments, particles 308 may be disposed in the inorganic sealant precursor before the inorganic sealant precursor is coated onto the body 302. Particles 308 may have any target concentration in the inorganic sealant and / or the inorganic sealant precursor. For example, particles 308 may be present in the inorganic sealant at a concentration of about 20% by weight. Particles 308 may be present in the inorganic sealant at concentrations of 10% to 30% by weight, 5% to 35% by weight, 3% to 40% by weight, or other concentrations.

[0081] In this embodiment, particle 308 may be nanoparticles. The diameter of particle 308 may be between 5 nanometers and 100 nanometers. The diameter of particle 308 may be between 1 nanometer and 100 nanometers. The diameter of particle 308 may be approximately 100 nanometers. Compared to other particle sizes, using nanoparticles as particle 308 improves particle penetration into the voids (e.g., pores) of the coating. If particle 308 is released during substrate processing, using nanoparticles as particle 308 reduces the risk of substrate contamination during processing. Nanoparticles may be more easily vented by the venting system before reaching the substrate than particles of other sizes, and are less likely to cause defects affecting substrate function than particles of other sizes.

[0082] In some embodiments, the inorganic sealant precursor may include a dispersant, for example, for dispersing resistant nanoparticles. The inorganic sealant may include polyvinyl alcohol, sulfonates, surfactants, or other dispersants. In some embodiments, suspending the particles in the inorganic sealant precursor may include stirring, ultrasonic treatment, or other techniques for suspending the particles.

[0083] Figure 3B A cross-sectional view of an exemplary coated article according to some embodiments of the present disclosure is shown.

[0084] Figure 3B The image shows a coated article 300B comprising a body 312 and multiple coatings. The body 312 can be any of various chamber components, as described above. Figure 3A The main body 302 is the component discussed above. The main body 312 may be composed of various materials, such as those discussed above in conjunction with the main body 302. The coating 314 may provide corrosion resistance to the main body 312. The coating 314 may include inorganic materials. The coating 314 may be combined with... Figure 3A The coatings 304 share many common features. The coating 314 may include one or more ceramic materials, including ceramic oxides, ceramic carbides, ceramic nitrides, etc.

[0085] Coating 314 comprises multiple layers, namely layers 316, 318, and 320. The layers of coating 314 are distinguished by the concentration of particles 322. A first coating 316 may have a low concentration of particles disposed within an inorganic sealant. In some embodiments, the first coating 316 may be particle-free or applied to a body 312 in which no particles are disposed. A second coating 318 may have a higher particle concentration, and a third layer 320 may have an even higher particle concentration. Coating 314 may include any number of layers of various particle densities, such as single, double, triple, or more layers as shown in article 300A. In some embodiments, multiple coatings of an inorganic precursor may be applied to the body 312, wherein the concentration of particles suspended in the precursor varies to produce coating 314. In some embodiments, the coating of the inorganic precursor may be cured prior to subsequent coatings. For example, an inorganic precursor (having a first particle concentration) may be coated onto the first layer 316. The inorganic precursor may be cured into an inorganic sealant. Subsequently, the inorganic precursor of the second layer 318 can be coated (with a second higher concentration of particles) and cured, the inorganic precursor of the third layer 320 can be coated (with a third concentration of particles) and cured, and so on. In some embodiments, the inorganic precursor can be coated multiple times prior to the curing operation of one or more previous layers. In some embodiments, the inorganic precursor can be coated onto the body 312, and particles can be coated onto the inorganic precursor to impregnate the particles into the inorganic material. For example, the inorganic precursor can be coated onto the body 312, and then particles 322 can be coated onto the inorganic precursor. Particles 322 can be allowed to migrate or disperse in the inorganic precursor, thereby creating a concentration gradient of particles 322, for example, in the inorganic sealant. Particles 322 can be pressed into the inorganic precursor, for example, by rolling or pressing the particles into the pores of the coating 314.

[0086] In the embodiment, ( Figures 4 to 7 (Not shown or described in the text) An inorganic sealant precursor can be applied to a protective coating via a dip coating process. Dip coating may include immersing a portion of the component (and the first coating) in the inorganic sealant precursor, such that the precursor penetrates the first coating to a specific depth.

[0087] In this embodiment, the dip-coating process begins by immersing the component in a bath containing an inorganic sealant precursor solution. The inorganic sealant precursor solution is formulated to have specific viscosity and concentration properties.

[0088] In some embodiments, the molar ratio of phosphate or phosphoric acid to a metal (e.g., aluminum or yttrium) may be 2:1, 3:1, or 4:1. This mixture may be in a solvent (e.g., ethanol, methanol, acetonitrile, THF, DMF, DMSO, IPA, or any other solvent described above) to form an inorganic sealant precursor.

[0089] In the embodiments, the phosphate-based sealant material and solvent can be mixed with water at 10%, 20% or 30% by weight.

[0090] After being removed from the bath, the component is extracted at a controlled rate. When the component is removed from the solution, the liquid sealant begins to gel due to solvent evaporation and the inherent reaction kinetics of the sealant's chemical properties.

[0091] In one embodiment, the component may be immersed in atmospheric pressure, a vacuum, or anywhere in between.

[0092] Subsequently, the previously submerged components undergo a curing phase. In embodiments, the curing phase may include placement in an oven or other heat treatment equipment. This treatment activates chemical crosslinking, thereby transforming the precursor material into a durable and adhesive sealant. This crosslinking may include the formation of ionic and covalent bonds between the sealant and the underlying protective coating.

[0093] As mentioned earlier, the curing process can be maintained below 350 degrees Celsius.

[0094] In this way, dip coating can be used to apply at least a sealing coating to a component.

[0095] Figures 4 to 7 Several methods and / or apparatuses for applying a coating to a component are shown, according to some embodiments.

[0096] Figure 4 An exemplary architecture of a deposition system 400 for performing aerosol or thermal spray deposition according to some embodiments of this disclosure is shown.

[0097] In embodiments, system 400 can be used to coat components of a processing device with various coatings. System 400 can be used to coat coatings of various types of materials, including inorganic coatings, ceramic coatings (e.g., plasma-resistant coatings), coatings comprising multiple components (e.g., inorganic and ceramic phases), or other types of coatings. System 400 can provide porous coatings, including gaps or cracks. In some embodiments, system 400 can be used in a thermal spraying system for depositing thermal coatings, where the thermal coating may crack, peel, break, or otherwise introduce defects as it cools.

[0098] System 400 includes a deposition chamber 402. The deposition chamber may include a component 406 to be coated (e.g., Figure 3A The main body 302, Figure 3BThe platform 404 (such as the main body 312, etc.) is used. The ambient pressure in the internal volume 403 of the chamber 402 can be reduced by a vacuum system 408, which is coupled to the internal volume 403 through an exhaust port 409 defined in the main body of the chamber 402. In some embodiments, deposition may occur at atmospheric pressure, ambient pressure, not in a vacuum, or similar conditions. The chamber 410 contains coating powder, such as metal oxide powder, ceramic powder, yttrium fluoride powder, powder mixture, etc., for coating the component 406 used in the deposition. The chamber 410 may include materials for thermal spray deposition, such as materials to be melted or heated to a high temperature for deposition on the component 406. The chamber 410 is coupled to a gas container 412. The coating material in the chamber 410 may be in the form of a fine powder, for example, it may have particles ranging in size from several micrometers to hundreds of micrometers.

[0099] In one embodiment, a carrier gas can flow from gas container 412 through chamber 410 to internal volume 403. The carrier gas propels coating powder through nozzle 414 to guide the coating powder onto component 406 to form a coating. In some embodiments, the coating material can be heated for thermal spray deposition before being introduced into nozzle 414. In some embodiments, coating material can be supplied to nozzle 414 and the temperature in nozzle 414 can be increased for thermal spray deposition of component 406.

[0100] Component 406 may be a component used in semiconductor manufacturing. Component 406 may be a component of an etching reactor, a thermal reactor, a semiconductor processing chamber, or the like. Examples of possible components include covers, substrate supports, processing kit rings, chamber liners, nozzles, spray heads, walls, bases, gas distribution plates, etc. Component 406 may be formed of materials such as aluminum, silicon, quartz, metal oxides, ceramic compounds, inorganic materials, or composites.

[0101] In some embodiments, the surface of component 406 may be polished to reduce the surface roughness of component 406. Reducing surface roughness improves the uniformity of the coating. In some embodiments, the surface roughness is reduced until it is below the target thickness of the coating. In some embodiments, not all areas of component 406 are coated. Areas of component 406 may be masked or shielded, or areas from which powder enters may be removed. In some embodiments, the coating may be removed from areas that are not intended to be coated after application.

[0102] During coating deposition, component 406 may be mounted on platform 404 within deposition chamber 402. Platform 404 may be a movable platform (e.g., an electrically powered platform) that can move in one, two, or three dimensions, and / or rotate in one or more dimensions, allowing platform 404 to be moved to different positions to facilitate coating of component 406 with paint propelled from nozzle 414. For example, movable platform 404 may be used to coat different portions or sides of component 406. Nozzle 414 may be selectively aimed at certain portions of component 406 from various angles and orientations.

[0103] In some embodiments, a vacuum system 408 may be used to evacuate the deposition chamber 402. Providing a vacuum environment within the internal volume 403 can facilitate coating application. For example, when the internal volume 403 is under vacuum, the paint powder propelled from the nozzle 414 encounters less resistance as it travels towards the component 406. The paint powder can impact the component 406 more regularly and at a higher speed, which can help adhere to the component 406, facilitate coating formation, reduce waste of coating material, etc.

[0104] Gas container 412 contains pressurized carrier gas. Suitable pressurized carrier gases include inert gases such as argon, nitrogen, and krypton. The pressurized carrier gas travels under pressure from gas container 412 into chamber 410. As the pressurized gas travels from chamber 410 to nozzle 414, it pushes some coating material from chamber 410 towards nozzle 414.

[0105] In some embodiments, system 400 can be used to deposit a single material onto one or more surfaces of component 406. In some embodiments, system 400 can be used to deposit multiple materials onto component 406. In some embodiments, an inorganic layer comprising multiple inorganic materials can be deposited on component 406. In some embodiments, a ceramic layer comprising multiple ceramic materials can be deposited on component 406. In some embodiments, a material comprising both an inorganic phase and a ceramic phase can be deposited on component 406. Multiple materials can be co-deposited by providing a mixture of powdered materials to chamber 410. In an alternative embodiment, two or more chambers can be coupled to a pressurized gas and a nozzle 414, with each chamber supplying material to nozzle 414. In an alternative embodiment, multiple nozzles can receive material from multiple chambers coupled to a pressurized carrier gas. These embodiments allow for the simultaneous deposition of multiple materials.

[0106] In some embodiments, the coating deposited by system 400 may be porous. For example, for... Figures 3A to 3B The porous coating can be sealed by placing an inorganic sealant within the pores of the coating. This can be achieved by applying an inorganic sealant precursor to the coating and allowing the precursor to cure into the inorganic sealant. The inorganic sealant may include resistant particles.

[0107] As a carrier gas propelling a suspension of coating material (e.g., coating material powder, droplets, etc.) enters the deposition chamber 402 from the nozzle 414, the coating material is pushed toward the component 406. In one embodiment, the carrier gas is pressurized such that the coating powder is pushed toward the component 406 at a rate between 150 m / s and 500 m / s. In some embodiments, the particle size of the coating powder and the pressure of the carrier gas can be tuned to achieve a target velocity distribution of the coating powder.

[0108] In some embodiments, the nozzle 414 is configured to be wear-resistant. Due to the high-speed movement of the paint powder through the nozzle 414, the nozzle 414 will wear and age rapidly. The nozzle 414 can reduce wear and material buildup.

[0109] In some embodiments, upon impact with component 406, the coating powder particles may fracture and distort due to kinetic energy, creating a layer adhered to component 406. As the coating powder continues to be applied, the particles bond themselves to form a coating or film. The coating on component 406 continues to grow through continuous collisions of the coating powder particles on component 406. In some embodiments, the particles mechanically collide with each other at high speeds under vacuum and with the substrate, thereby breaking into smaller fragments to form a dense layer, rather than melting. In some embodiments, the crystalline structure of the coating powder particles in chamber 410 is preserved by coating onto component 406. In some embodiments, melting of the particles may occur when kinetic energy is converted into thermal energy. In some embodiments, aerosol or thermal spray deposition may be performed at room temperature or between 15°C and 35°C. In some embodiments, component 406 does not need to be heated, and the spray deposition process does not significantly increase the temperature of component 406. Applications of this type can be used to coat components that may be damaged in high-temperature environments. For example, a component formed by multiple parts held together by bonding layers that melt at low temperatures may be damaged in a deposition process performed at high temperatures. For example, a component formed from multiple parts of different materials with different thermal expansion properties may be damaged because the parts expand to different sizes at different rates during deposition, etc. Such a component is unlikely to be damaged by the coating at ambient temperature.

[0110] In some embodiments, deposition may be performed at a high temperature. In some embodiments, component 406 may be heated before or during deposition. This heating causes the coating powder to melt. In some embodiments, after deposition occurs, component 406 may be placed in an oven to heat the component and coating material for a period of time. The temperature of component 406 and the coating will rise, causing the coating to partially or completely melt. The coating may be allowed to flow across the surface of component 406, for example, to improve coating uniformity, allow the coating to reach new areas on the surface of component 406, etc. In embodiments, the oven temperature may be maintained at or below 350 degrees Celsius.

[0111] In some embodiments, post-coating processes can be performed on the coated component. For example, polishing or grinding can be performed after the ceramic coating is applied to component 406. The coated component can undergo other post-coating processes, such as heat treatment. In some embodiments, heat treatment forms a coating interface between the coating and the component. For example, a yttrium oxide (Y2O3) coating over an alumina (Al2O3) component can form a yttrium aluminum garnet (YAG) layer, which facilitates adhesion and provides further protection for the component. Barrier layers can reduce the occurrence of delamination, chipping, peeling, and flaking. Heat treatment can also change the chemical composition of the coating—a yttrium oxide / alumina dual coating can be converted into a YAG coating through heat treatment.

[0112] Figure 5 An example apparatus 500 for performing plasma electrolytic oxidation (PEO) to produce a coating on a body 510 is shown according to some embodiments of the present disclosure.

[0113] In the PEO, the body 510 (e.g., a component of a manufacturing system) is at least partially immersed in an electrolyte bath 512. The electrolyte bath may be an aqueous solution of a salt, additive, or the like for forming a target coating on the body 510. The electrolyte bath may be an alkaline solution. In an embodiment, the electrolyte bath 512 may comprise potassium hydroxide (KOH).

[0114] Electrode 514 is also in contact with electrolyte bath 512. In some embodiments, electrode 514 may be at least partially immersed in electrolyte bath 512. In some embodiments, electrode 514 may be integrated into electrolyte bath 512, for example, at least a portion of the wall of electrolyte bath 512 may serve as electrode 514.

[0115] Electrode 514 and body 510 may be coupled to voltage supply 516, which applies a potential difference between electrode 514 and body 510. In some embodiments, the voltage is a DC voltage. In some embodiments, the voltage is an AC voltage. In some embodiments, alternating current is applied. In some embodiments, body 510 may act as an anode (e.g., a positively charged electrode), and electrode 514 may act as a cathode (negative electrode). A high voltage, such as possibly exceeding 200 V, may be applied between body 510 and electrode 514.

[0116] In some embodiments, the potential between the body 510 and the electrode 514 may reach a critical value at which discharge occurs from the metal surface into the electrolyte. The discharge (e.g., an electric arc) can cause plasma to form near the metal surface (e.g., the surface of the body 510). In the presence of plasma induced by a high voltage applied to a component of the device 500, oxygen ions can be driven to the metal surface (e.g., the metal surface of the body 510). In some embodiments, the oxygen ions can react with the surface of the body 510 to produce a potentially thick and porous hard oxide layer. According to aspects of this disclosure, the porous coating can subsequently be reinforced with an inorganic sealant comprising resistant particles.

[0117] Figure 6A Exemplary mechanisms and apparatuses for performing deposition techniques using high-energy particles are shown according to some embodiments of this disclosure.

[0118] Figure 6A Deposition mechanisms suitable for various deposition techniques utilizing high-energy particles, such as ion-assisted deposition (IAD), are shown. Exemplary IAD methods include deposition processes that introduce ion bombardment, such as evaporation (e.g., activated reactive evaporation (ARE)) and sputtering in the presence of ion bombardment, to form the coatings described herein. In embodiments, any IAD method may be performed in the presence of reactive gaseous substances such as O2, N2, halogens, etc.

[0119] As shown in the figure, a thin coating 615 can be formed by the accumulation of a deposition material 602 in the presence of high-energy particles 603 (such as ions). The deposition material 602 includes atoms, ions, free radicals, or mixtures thereof. The high-energy particles 603 can impact and compact the coating during the formation of a thinner final plasma-resistant coating 615.

[0120] In some embodiments, the coating may be applied by physical vapor deposition (PVD), chemical vapor deposition (CVD), sputtering, or other deposition methods. In some embodiments, an IAD method may enhance this deposition technique. In some embodiments, a tough coating applied by another method may be used to create a tough coating comprising tough particles in an inorganic sealant of the coating without performing an IAD method to enhance the deposition.

[0121] Figure 6B Exemplary mechanisms and apparatuses for performing deposition techniques using high-energy particles are shown according to some embodiments of this disclosure.

[0122] In one embodiment, IAD is used to increase the thin coating 615, as previously described elsewhere herein (e.g., using aerosol deposition, thermal spray deposition, PVD, sputtering, plasma electrolytic oxidation, or the like). Figure 6B A schematic diagram of an IAD deposition apparatus is shown. As illustrated, a material source 650 provides a flux of deposition material 652 for deposition on a workpiece 660, while a high-energy particle source 655 provides a flux of high-energy particles 653, both of which impact the workpiece 660 throughout the IAD process. The high-energy particle source 655 can be oxygen or other ion sources. The high-energy particle source 655 can also provide other types of high-energy particles, such as inert radicals, neutron atoms, and nanoscale particles from particle generation sources (e.g., from plasma, reactive gases, or from the material source providing the deposition material). The IAD can utilize one or more plasmas or beams to provide the material and high-energy ion sources. Reactive materials can also be provided during the deposition of plasma-resistant coatings.

[0123] In the IAD process, high-energy particles 653 can be controlled independently of other deposition parameters by a high-energy ion (or other particle) source 655. The composition, structure, crystal orientation, and grain size of the thin film protective layer can be manipulated based on the energy (e.g., velocity), density, and incident angle of the high-energy ion flux. Additional adjustable parameters include the temperature of the substrate during deposition and the deposition duration. Ion energy can be roughly categorized as low-energy ion-assisted and high-energy ion-assisted. High-energy ion-assisted deposition projects ions at a higher velocity than low-energy ion-assisted deposition. Overall, high-energy ion-assisted deposition has demonstrated superior performance. The substrate (product) temperature during deposition can be roughly categorized as low temperature (in one embodiment, approximately 120 to 150 degrees Celsius, which is typical room temperature) and high temperature (in one embodiment, approximately 270 degrees Celsius).

[0124] Figure 7 A schematic diagram of an exemplary plasma spray deposition apparatus 700 for spray deposition technology is shown, according to some embodiments of the present disclosure.

[0125] The plasma spraying apparatus 700 may include a housing 702 that encloses a nozzle anode 706 and a cathode 704. The housing 702 allows a gas flow 708 to pass through the plasma spraying apparatus 700 and flow between the nozzle anode 706 and the cathode 704. An external power source can be used to apply a voltage potential between the nozzle anode 706 and the cathode 704. The voltage potential generates an electric arc between the nozzle anode 706 and the cathode 704, which ignites the gas flow 708 to generate plasma gas. The ignited plasma gas flow 708 generates a high-speed plasma flame 714, which is directed away from the nozzle anode 706 and directed towards the article 720.

[0126] In some embodiments, the current intensity of the generator supplying power to the device may be between 400 amperes and 600 amperes.

[0127] In some embodiments, the voltage between the anode and cathode may be between 50 volts and 80 volts.

[0128] The plasma spraying equipment 700 can be located in the chamber or surrounding small chambers.

[0129] In some embodiments, the gas flow 708 may be a gas or a gas mixture, including but not limited to argon, nitrogen, hydrogen, helium, and combinations thereof. In some embodiments, the gas flow 708 may include a primary plasma gas (e.g., argon) delivered at a first pressure and volume, and an auxiliary plasma gas (e.g., hydrogen) delivered at a second pressure and volume. In embodiments, the primary and auxiliary plasma gases may be any of the plasma gases described above.

[0130] In one embodiment, the primary plasma gas can be delivered at a pressure of 0.1 mPa to 1 mPa. In another embodiment, the auxiliary plasma gas can be delivered at a pressure of 0.1 mPa to 1 mPa.

[0131] In the embodiments, the main plasma gas can be 2 to 3 m 3 Volumetric delivery rate of / s. In embodiments, the auxiliary plasma gas can be 0.5 to 2 m³. 3 / s volumetric transport

[0132] In some embodiments, the spraying system is used to perform plasma spraying of a slurry, and the plasma spraying equipment 700 may be equipped with one or more fluid lines 712 to deliver the slurry into the plasma stream 714. In some embodiments, a particle stream 716 is generated by the plasma stream 714 and pushed toward the article 720. Upon impact with the article 720, the particle stream forms a coating 718.

[0133] In some embodiments, the particle stream can travel a distance of 50 mm to 100 mm to reach the article.

[0134] Figure 8 The following is a flowchart of an exemplary method 800 for producing a coating comprising an inorganic sealant and durable particles, according to some embodiments of this disclosure.

[0135] At step 802, a porous ceramic coating may be formed on a first surface of the body. In some embodiments, the porous ceramic coating may be formed as a metal oxide, an inorganic material, or another protective and / or plasma-resistant material. The body may be a metal body, a ceramic body, a metal / ceramic composite body, or another material. The body may be a component of a manufacturing system. The body may be a component of a processing chamber. The body may be a processing chamber liner, a slit door liner, a plasma shield, a cathode sleeve, a spray head, or another chamber component.

[0136] In some embodiments, forming a porous coating may include depositing a coating material using one or more deposition techniques. The coating may be deposited via plasma electrolytic oxidation, thermal spraying, aerosol deposition, plasma spraying, physical vapor deposition (e.g., sputtering), chemical vapor deposition, or similar deposition methods. The porous coating may be yttrium oxyfluoride, yttrium fluoride, aluminum oxide, yttrium oxide, zirconium oxide, silicon carbide, magnesium oxide, or the like.

[0137] In step 804, an inorganic sealant precursor is disposed within one or more pores of the porous ceramic coating. The inorganic sealant precursor comprises resistant particles, such as ceramic particles, metal oxide particles, yttrium oxyfluoride, yttrium fluoride, alumina, yttrium oxide, zirconium oxide, silicon carbide, magnesium oxide particles, material mixtures, or the like. The resistant particles may be nanoparticles. The diameter of the resistant particles may be between 10 nm and 100 nm. Disposing of the inorganic sealant precursor within the pores of the porous coating may include immersing a first surface of the substrate in the inorganic sealant precursor. Disposing of the inorganic sealant precursor within the pores of the coating may include spraying or brushing the inorganic sealant precursor onto the porous ceramic coating. The inorganic sealant may penetrate into the pores to a depth, for example, between 100 µm, 10 µm, and 1 mm, or a similar depth. The resistant particles may be disposed in the inorganic sealant prior to applying the sealant precursor to the coating. After the sealant precursor is applied to the coating, for example, after the sealant precursor is located within the pores of the coating, it can be applied to the surface of the coating to perform the placement of resistant particles in the inorganic sealant precursor. The particles can then be impregnated into the inorganic sealant precursor, for example, by rolling or pressing the coating surface to drive the particles into the sealant precursor. In some embodiments, multiple coatings of the inorganic sealant precursor can be performed. In some embodiments, multiple applications can be different formulations, such as different precursors, precursors of different inorganic substances, different particulate materials, different particle concentrations, or the like. In some embodiments, the first coating may have a lower particle concentration than subsequent coatings.

[0138] At step 806, the inorganic sealant precursor is cured to produce an inorganic sealant. The inorganic sealant precursor may be self-curing, for example, curable under ambient conditions. The inorganic sealant precursor may be a hybrid curing precursor. The inorganic sealant precursor may be a thermosetting precursor. The inorganic sealant precursor may be vacuum cured.

[0139] The foregoing description sets forth numerous specific details, such as examples of specific systems, components, methods, etc., to better understand the various embodiments of this disclosure. However, it will be apparent to those skilled in the art that at least some embodiments of this disclosure can be practiced without the stated specific details. In other instances, well-known components or methods are not described in detail, or are presented in a simplified step-by-step diagram format to avoid unnecessarily obscuring this disclosure. Therefore, the specific details set forth are merely exemplary. Specific implementations may differ from these exemplary details and still fall within the scope of this disclosure.

[0140] The phrase "one embodiment" or "an embodiment" as used in this specification means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Therefore, the appearance of the phrase "in one embodiment" or "in an embodiment" throughout this specification does not necessarily refer to the same embodiment. Furthermore, the term "or" indicates an inclusive "or," not an exclusive "or." When the terms "about" or "approximately" are used herein, it is intended to indicate that the presented nominal values ​​are accurate to within ±10%.

[0141] Although the operations of the methods described herein are illustrated and described in a specific order, the order of operations for each method can be altered so that some operations can be performed in reverse order, thereby allowing some operations to be performed at least partially concurrently with other operations. In another embodiment, instructions or sub-operations of different operations may be performed intermittently and / or alternately.

[0142] It should be understood that the above description is illustrative only and not limiting. Many other embodiments will be apparent to those skilled in the art upon reading and understanding the above description. Therefore, the scope of this disclosure should be determined by referring to the full scope of the appended claims and their equivalents.

[0143] Although this specification contains details of many specific embodiments, these details should not be construed as limiting the scope of the claims, but rather as descriptions of specific features of particular embodiments. Certain features described in the context of independent embodiments may also be implemented in combination in a single embodiment. Conversely, various features described in the context of a single embodiment may also be implemented individually or in any suitable sub-combination in multiple embodiments. Furthermore, although features may be described above as functioning in certain combinations, and even initially claimed to be so, one or more features from the claimed combinations may be removed from said combinations in some cases, and the claimed combinations may be for sub-combinations or variations thereof.

[0144] Similarly, although the operations are shown in a specific order in the figures, it should not be construed as requiring the execution of such operations in the specific order or sequence shown, or requiring the execution of all illustrated operations to achieve the desired result. In some cases, multitasking and parallel processing may be advantageous. Furthermore, the separation of the various system modules and components in the above embodiments should not be construed as requiring such separation in all embodiments, and it should be understood that the described program components and systems can generally be integrated together in a single software product or packaged into multiple software products.

[0145] Specific embodiments of the objective have been described. Other embodiments fall within the scope of the following claims. For example, the actions described in the claims can be performed in different orders and the desired result can still be obtained. As an example, the process shown in the figures does not necessarily depend on the specific order or sequential order shown to achieve the desired result. In some cases, multitasking and parallel processing may be advantageous.

Claims

1. A component comprising: main body; and A coating, the coating being deposited on the surface of the body, the coating comprising: Porous ceramics; and An inorganic sealant that at least partially fills the pores in the porous ceramic, wherein a plurality of particles are disposed within the inorganic sealant.

2. The component according to claim 1, wherein the porous ceramic comprises one or more of the following: Alumina; Yttrium oxide; Yttrium fluoride; Zirconium oxide; Magnesium oxide; or Silicon carbide.

3. The component according to claim 1, wherein the coating has a thickness greater than 100µm.

4. The component according to claim 1, wherein the inorganic sealant impregnates the surface of the porous ceramic to a depth between 10 µm and 500 µm.

5. The component according to claim 1, wherein the inorganic sealant comprises at least one of the following: Aluminum phosphate; Zinc phosphate; Magnesium phosphate; or Manganese phosphate.

6. The component according to claim 1, wherein the plurality of particles comprises metal oxide nanoparticles.

7. The component of claim 1, wherein the plurality of particles comprises one or more of the following: Yttrium fluoride; Yttrium fluoride; Alumina; Magnesium oxide; or Yttrium oxide.

8. The component of claim 1, wherein the component comprises: Treat the chamber lining; Narrow door lining; Plasma shielding; Cathode sleeve; or Sprinkler head.

9. A method comprising the following steps: A porous ceramic coating is formed on the surface of the chamber components of the processing chamber; An inorganic sealant precursor is used to at least partially fill one or more pores of the porous ceramic coating, the inorganic sealant precursor comprising: Solvent; Inorganic sealants; and Multiple particles; and The inorganic sealant precursor is cured to produce an inorganic sealant within the one or more holes.

10. The method of claim 9, wherein the chamber component comprises: Treat the chamber lining; Narrow door lining; Plasma shielding; Cathode sleeve; or Sprinkler head.

11. The method of claim 9, wherein the step of forming the porous ceramic coating on the surface comprises performing one or more of the following steps: Plasma electrolytic oxidation; Thermal spraying; Plasma spraying; or Physical vapor deposition.

12. The method of claim 9, wherein the plurality of particles comprises one or more of the following: Yttrium fluoride; Yttrium fluoride; Alumina; Magnesium oxide; or Yttrium oxide.

13. The method of claim 9, wherein the inorganic sealant comprises one or more of the following: Aluminum phosphate; Zinc phosphate; Magnesium phosphate; or Manganese phosphate.

14. The method of claim 9, wherein the solvent comprises one or more of the following: Deionized (DI) water; Ethanol; Methanol; Acetonitrile; Tetrahydrofuran (THF); Dimethylformamide (DMF); Dimethyl sulfoxide (DMSO); or Isopropanol (IPA).

15. The method of claim 9, wherein the weight percentage of the plurality of particles in the inorganic sealant precursor is in the range of 5% to 20%.

16. The method of claim 9, wherein the molar ratio of the metal in the porous ceramic coating to the phosphate in the inorganic sealant is in the range of 1:2 to 1:

4.

17. The method of claim 9, wherein the step of causing the inorganic sealant precursor to at least partially fill one or more pores of the porous ceramic coating comprises one or more of the following steps: At least a portion of the chamber component having the porous ceramic coating is immersed in the inorganic sealant precursor; The inorganic sealant precursor is sprayed onto the porous ceramic coating; or The inorganic sealant precursor is brushed onto the porous ceramic coating.

18. A substrate processing chamber, comprising a component, wherein the component includes: Metal body; and A coating, deposited on the surface of the metal body, the coating comprising: Porous ceramics, Inorganic sealants, and Multiple particles disposed within the inorganic sealant.

19. The substrate processing chamber of claim 18, wherein the porous ceramic comprises one or more of the following: Alumina; Yttrium oxide; Yttrium fluoride; Zirconium oxide; Magnesium oxide; or Silicon carbide.

20. The substrate processing chamber of claim 18, wherein the plurality of particles comprises one or more of the following: Yttrium fluoride; Yttrium fluoride; Alumina; Magnesium oxide; or Yttrium oxide.

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