Display panel and display device using the display panel

Abstract

This disclosure discloses a display panel and a display device using the display panel. The display panel includes a substrate having a plurality of emitting portions spaced apart from each other, a light-emitting element disposed on the substrate, a lens portion disposed on the light-emitting element, a color conversion portion disposed on the lens portion, and a variable transmittance blocking structure disposed above the color conversion portion. The variable transmittance blocking structure includes blocking walls corresponding to regions between the plurality of emitting portions.

Description

Cross-references to related applications

[0001] This application claims the benefit of Korean Patent Application No. 10-2024-0202839, filed on December 31, 2024, which is incorporated herein by reference as if fully set forth herein. Technical Field

[0002] This disclosure relates to a display panel and a display device including the display panel. Background Technology

[0003] As the applications of display devices expand, such devices are no longer limited to monitors and televisions, but have recently also become suitable for wearable forms that can be mounted on a viewer for movement. When a display device is configured to be mounted on a viewer for display purposes, it is housed within a mechanism primarily mounted to the viewer's head. In this case, because the display device is configured to fit snugly against the viewer, the area where it is positioned is limited by physical space. For this reason, the display device should have an integrated configuration to achieve a clearer, higher-resolution display, while also requiring high brightness.

[0004] These wearable or mountable display devices exhibit different trends from large-area display devices in terms of viewing angle, brightness characteristics, and layout density. Therefore, different component structures need to be developed to achieve high integration and high brightness characteristics. Summary of the Invention

[0005] Therefore, this disclosure relates to a display panel and a display device using the display panel, which substantially eliminates one or more problems caused by the limitations and disadvantages of related technologies.

[0006] This disclosure relates to a display panel capable of preventing viewers located outside a predetermined field of view of the display panel from perceiving interfering images from other units and achieving a narrow viewing angle, and a display device using the display panel.

[0007] The aspects of this disclosure are not limited to those described above, and other aspects of this disclosure that have not yet been described will be more clearly understood by those skilled in the art from the following description.

[0008] To achieve these and other advantages and for the purposes of this disclosure, as embodied and broadly described herein, the display panel includes a substrate having a plurality of emitting portions spaced apart from each other, a light-emitting element disposed on the substrate, a lens portion disposed on the light-emitting element, a color conversion portion disposed on the lens portion, and a transmittance variable blocking structure disposed above the color conversion portion, the transmittance variable blocking structure including blocking walls respectively corresponding to regions between the plurality of emitting portions. Attached Figure Description

[0009] The accompanying drawings, included to provide a further understanding of this disclosure and incorporated into and constituting a part of this application, illustrate (multiple) embodiments of this disclosure and, together with the specification, serve to explain the principles of this disclosure. In the drawings: Figure 1 This is a schematic plan view illustrating a display device according to an embodiment of the present disclosure; Figure 2 It is shown Figure 1 A plan view of a portion of the active region in the image; Figure 3 It is along Figure 2 A cross-sectional view taken from line I-I' in the diagram; Figure 4 According to the embodiments Figure 1 A circuit diagram of a sub-pixel; Figure 5 It is a graph depicting the light absorption characteristics of materials with different band gaps; Figure 6 This is a cross-sectional view of a display panel according to another embodiment of the present disclosure; Figure 7 This is a plan view showing an area of ​​a display panel according to another embodiment of the present disclosure; Figure 8 This is a perspective view of a display device according to an embodiment of the present disclosure; and Figure 9 The viewer wearing is shown from the top side. Figure 8 A plan view showing the status of the display device. Detailed Implementation

[0010] Reference will now be made in detail to preferred embodiments of this disclosure, examples of which are illustrated in the accompanying drawings. Where possible, the same reference numerals will be used throughout the drawings to refer to the same or similar parts. In the following description of this disclosure, detailed descriptions of known functions and configurations incorporated herein may be omitted where such inclusion might obscure the subject matter. Furthermore, the names of elements used in the following description have been chosen for clarity of description and may differ from the names of elements in actual products.

[0011] The shapes, dimensions, ratios, angles, quantities, etc., shown in the accompanying drawings to illustrate various exemplary embodiments of this disclosure are given by way of example only. This disclosure is not limited to the illustrations in the accompanying drawings.

[0012] In this specification, one or more components may be added where terms such as “comprising,” “having,” or “including” are used, unless a term such as “only” is used. As used herein, the term “and / or” includes a single associated listed item as well as any and all combinations of two or more associated listed items.

[0013] A phrase such as "at least one of..." can modify the entire list of elements when placed before it, but may not modify any individual element of the list. The term "at least one" should be understood to include any and all combinations of one or more related listed items. For example, "at least one of the first, second, and third elements" means all combinations of the three listed elements, combinations of any two of the three elements, and each individual element, i.e., the first, second, and third elements.

[0014] The terminology used herein is for the purpose of describing a particular aspect and is not intended to limit the scope of this disclosure. As used herein, the terms “a” and “an” used to describe elements in the singular are intended to include multiple elements. Unless the context clearly indicates otherwise, elements described in the singular are intended to include multiple elements, and vice versa.

[0015] When interpreting a component or value, the component or value should be interpreted as including a range of errors or tolerances, even if no explicit description of such range of errors or tolerances is provided.

[0016] In describing various exemplary embodiments of this disclosure, when using terms such as "on," "above," "below," and "next to" to describe the positional relationship between two elements, at least one intermediate element may exist between the two elements unless "immediately following," "directly," or "near." It should be understood that when an element or layer is referred to as being "connected to" or "coupled to" another element or layer, it may be directly connected to or coupled to the other element or layer, or one or more intermediate elements or layers may exist.

[0017] In describing various exemplary embodiments of this disclosure, when terms such as “after,” “following,” “next,” and “before” are used to describe the temporal relationship between two events, another event may occur between them, unless more restrictive terms such as “only,” “immediately following,” or “directly” are used.

[0018] In describing various exemplary embodiments of this disclosure, terms such as “first” and “second” may be used to describe various components. These terms are intended to distinguish identical or similar components from one another, without limiting the scope of the components. Therefore, throughout the specification, unless otherwise specifically stated, a “first” component may be the same as a “second” component within the technical concept of this disclosure.

[0019] As will be fully understood by those skilled in the art, the features of the various embodiments of this disclosure may be coupled or combined with each other in part or in whole, and may interoperate differently with each other and be technically driven. Embodiments of this disclosure may be performed independently of each other, or may be performed together in an interdependent relationship.

[0020] The display device of this disclosure will be described below with reference to the accompanying drawings and embodiments.

[0021] Figure 1 This is a schematic plan view illustrating a display device according to an embodiment of the present disclosure.

[0022] like Figure 1 As shown, a display device (represented by reference numeral "1000") according to an embodiment of the present disclosure may include a display panel 11, an image processor 12, a timing controller 13, a data driver 14, a scan driver 15, and a power supply 16.

[0023] Display panel 11 can display images corresponding to the data signal DATA provided from data driver 14, the scan signal provided from scan driver 15, and the power supplied from power supply 16.

[0024] The display panel 11 may include sub-pixels SP, which are respectively disposed at the intersections of multiple gate lines GL and multiple data lines DL. The structure of the sub-pixels SP may vary depending on the type of display device 1000.

[0025] For example, depending on the type of display device 1000, the subpixel SP can be formed with a top-emitting, bottom-emitting, or dual-emitting structure. Each subpixel SP refers to a unit that can be formed using a specific color filter or that can emit its own color without being formed using a color filter. For example, a subpixel SP may include red, green, and blue subpixels. Optionally, a subpixel SP may include, for example, red, blue, white, and green subpixels. A subpixel SP may have one or more different emission regions depending on its light-emitting characteristics. For example, a subpixel configured to emit a color different from that of the blue subpixel may have an emission region different from that of the blue subpixel.

[0026] One or more subpixels SP can form a unit pixel. For example, a unit pixel may include red, green, and blue subpixels that can be arranged repeatedly. Alternatively, a unit pixel may include red, green, blue, and white subpixels that can be arranged repeatedly or in a four-type arrangement. In embodiments of this disclosure, the color type, arrangement type, and arrangement order of the subpixels may vary depending on the emission characteristics of the subpixels, the lifetime of the device, the specifications of the device, and other factors, but this disclosure is not limited thereto.

[0027] The display panel 11 can be divided into an active region AA and a non-active region NA surrounding the active region AA, wherein sub-pixels SP are configured to display images (within the dashed area). A scan driver 15 can be installed in the non-active region NA of the display panel 11. Additionally, the non-active region NA may include pad areas PAD, which include pad electrodes PD.

[0028] Here, the active area AA is also called the display area, and the non-active area NA is also called the non-display area.

[0029] In addition to the data signal DATA provided from an external source, the image processor 12 can also output a data enable signal DE, etc. Besides the data enable signal DE, the image processor 12 can also output one or more of a vertical synchronization signal, a horizontal synchronization signal, and a clock signal; however, for the sake of simplicity, these signals are omitted here.

[0030] The timing controller 13 can receive drive signals and data signals DATA from the image processor 12. The drive signals may include a data enable signal DE. Alternatively, the drive signals may include a vertical synchronization signal, a horizontal synchronization signal, and a clock signal. The timing controller 13 can output a data timing control signal DDC for controlling the operating timing of the data driver 14 and a gate timing control signal GDC for controlling the operating timing of the scan driver 15, based on the drive signals.

[0031] Data driver 14 can sample and latch the data signal DATA received from timing controller 13 in response to the data timing control signal DDC provided from timing controller 13. Data driver 14 can convert the obtained data into a gamma reference voltage and then output the gamma reference voltage.

[0032] Data driver 14 can output data signal DATA via data line DL. Data driver 14 can be implemented as an integrated circuit (IC). For example, data driver 14 can be electrically connected to pad electrode PD disposed in the non-active area NA of display panel 11 via a flexible circuit film (not shown).

[0033] The scan driver 15 can output a scan signal in response to the gate timing control signal GDC provided from the timing controller 13. The scan driver 15 can output the scan signal through the gate line GL. The scan driver 15 can be implemented as an integrated circuit (IC) or as a gate-in-panel (GIP) in the display panel 11.

[0034] The power supply 16 can output high-level voltages, low-level voltages, etc., for driving the display panel 11. The power supply 16 can provide a high-level voltage to the display panel 11 via the first power line EVDD (drive power line or pixel power line), and can provide a low-level voltage to the display panel 11 via the second power line EVSS (auxiliary power line or common power line).

[0035] The display panel 11 is divided into an active region AA and an active region NA, and may include a plurality of sub-pixels SP defined by gate lines GL and data lines DL that are formed in a matrix and intersect each other in the active region AA.

[0036] Subpixels SP may include subpixels configured to emit light of at least two colors selected from red, green, blue, yellow, magenta, and cyan. Additionally, multiple subpixel SPs may be formed using a specific type of color filter, or they may emit their own colors without being formed using a color filter. However, this disclosure is not limited to these configurations, and the color type, arrangement type, and arrangement order of the subpixel SPs may vary depending on the emission characteristics of the subpixels, the lifespan of the device, the specifications of the device, and other factors.

[0037] Each subpixel SP may include an emitting portion REM, GEM, or BEM configured to emit light, and a non-emitting portion NEA surrounding the emitting portion.

[0038] In the following description, the structure of a display panel according to an embodiment of this specification will be described with reference to the accompanying drawings.

[0039] Figure 2 It is shown Figure 1 A plan view of a portion of the active region in the image. Figure 3 It is along Figure 2 The cross-sectional view taken from line I-I' in the diagram. Figure 4 According to the embodiments Figure 1 A circuit diagram of a sub-pixel.

[0040] like Figure 2 and Figure 3As shown, the display panel according to an embodiment of the present disclosure includes a substrate 110 having a plurality of emitting portions REM, GEM and BEM spaced apart from each other, a light-emitting element ED disposed on the substrate 110, a lens portion 200 disposed on the light-emitting element ED, and color conversion portions CFB (211, 212a, 212b and 212c) disposed on the lens portion 200.

[0041] The emitting portions REM, GEM, and BEM disposed on the substrate 110 may include, for example, a red emitting portion REM, a green emitting portion GEM, and a blue emitting portion BEM disposed side by side in sequence.

[0042] The emitting portions REM, GEM, and BEM can be defined as open areas, i.e., openings, within the embankment 150. Alternatively, the area where the embankment 150 is located can be defined as the non-emitting portion NEA.

[0043] Each light-emitting element ED includes a first electrode 161 (161b, 161a, or 161c) corresponding to one of a plurality of emitting portions REM, GEM, and BEM, an intermediate layer EL, and a second electrode 170.

[0044] Here, the embankment 150 defining the emission portions REM, GEM, and BEM covers the edges of the first electrodes 161 (161a, 161b, and 161c).

[0045] Each embodiment of the display device in this disclosure includes a transmittance variable blocking structure 220 disposed above color conversion portions CFB (211, 212a, 212b and 212c) and including a blocking wall 225.

[0046] The barrier wall 225 is spaced apart from the emitting portions REM, GEM, and BEM, and may have a shape surrounding the emitting portions REM, GEM, and BEM. Here, each barrier wall 225 may extend as a single line between adjacent different emitting portions.

[0047] The blocking wall 225 can overlap with the non-emitting portion NEA and can have a matrix-shaped planar structure with an opening larger than the corresponding emitting portions REM, GEM, and BEM of the sub-pixel SP in the entire active region AA. The blocking wall 225 can have a seamless, integrated planar structure without divisions throughout the entire active region AA.

[0048] The barrier wall 225 included in the transmittance variable barrier structure 220 is configured to correspond to the regions between the multiple emission portions REM, GEM and BEM, respectively. Figure 2 and Figure 3Examples are shown where barrier walls 225 are respectively disposed between adjacent transmitting sections in the REM, GEM, and BEM. However, embodiments of this disclosure are not limited to the above configuration. For example, barrier walls 225 may be disposed for every n transmitting sections (n ​​is a natural number equal to or greater than 2).

[0049] The spacing between the blocking walls 225 can correspond to the spacing of the lens portions 200.

[0050] The spacing between the blocking walls 225 can be adjusted according to the field of view (FOV) of the current viewer WA. For example, when the field of view (FOV) of the current viewer WA corresponds to m (m is a natural number) subpixels, a blocking wall 225 can be set for every m subpixels.

[0051] The spacing between the blocking walls 225 can vary depending on the viewing angle range to be covered by the display panel. As the viewing angle range increases, the spacing between the blocking walls 225 can increase. For example, when the current viewing angle is set to ±25° from the front, a viewer WC located outside the ±25° front viewing angle range can be prevented from receiving light passing through the variable transmittance blocking structure 220 because the light is blocked by the blocking walls 225. Therefore, normal image viewing is only possible within a predetermined viewing angle range outside the display panel where the variable transmittance blocking structure 220 is provided, and the blocking walls 225 prevent image transmission to a viewer WC outside the predetermined viewing angle range.

[0052] The variable transmittance blocking structure 220 described above can prevent viewers outside the FOV range from perceiving interfering images of views adjacent to the normal view.

[0053] In particular, in a structure without a blocking portion, due to the curvature of the lens portion 200 causing the beam emitted as oblique light, a viewer outside the predetermined viewing angle can perceive an interfering view adjacent to the normal view. However, in the display panel according to an embodiment of this disclosure, the variable transmittance blocking structure 220 is provided at the outermost edge of the display panel, such as... Figure 3 As shown, this prevents oblique light from being transmitted to the viewer outside the predetermined viewing angle range.

[0054] The barrier 225 is configured to shield oblique light and is located in the non-emitting portion NEA. It has a width smaller than that of the embankment 150 and the light shielding layer 211 so as not to affect the emission of the front light.

[0055] The transmittance variable barrier structure 220 includes a first electrode structure 221 and a second electrode structure 223 facing each other, wherein a barrier wall 225 is disposed between the first electrode structure 221 and the second electrode structure 223.

[0056] Each of the first electrode structure 221 and the second electrode structure 223 may include a transparent electrode material, such as indium tin oxide (ITO), indium zinc oxide (IZO), or indium tin zinc oxide (ITZO).

[0057] The first electrode structure 221 may be plate-shaped, while the second electrode structure 223 may have a shape corresponding to a divisional pattern of the blocking walls 225 surrounding the plurality of emission portions REM, GEM and BEM, respectively.

[0058] Each blocking wall 225 comprises an organic semiconductor material. Therefore, the blocking wall 225 can apply a voltage difference between the first electrode structure 221 and the second electrode structure 223 to generate a perpendicular electric field between them. The band gap of the blocking wall 225 can be adjusted to block and / or absorb light. As a result, the blocking wall 225 is used to block at least a portion or all of the light in the visible spectrum.

[0059] exist Figure 3 In the embodiment of the display panel, the first electrode structure 221 and the second electrode structure 223 can extend to the non-active region NA (see Figure 1 This allows different voltages to be applied in the non-active region NA.

[0060] The voltage difference applied between the first electrode structure 221 and the second electrode structure 223 can be selectively adjusted according to ambient light conditions.

[0061] The barrier 225 includes an organic semiconductor material capable of changing its band gap according to the wavelength of the light incident thereon, and the adjustable band gap can be from 1.5 eV to 3.5 eV depending on the voltage applied.

[0062] When a voltage difference is applied between the first electrode structure 221 and the second electrode structure 223, the blocking wall 225 can exhibit light absorption or light blocking properties for light corresponding to at least a portion of the wavelengths of the visible spectrum.

[0063] Unlike the black resin that typically forms the louver structure included in the light control film, the organic semiconductor material constituting the barrier wall 225 enables light sensing and allows for easy control of the band gap. Furthermore, since organic semiconductor materials do not produce degassing or similar byproducts during processing, they are advantageous as environmentally friendly materials.

[0064] Furthermore, in each embodiment of the display panel according to this disclosure, the transmittance variable blocking structure 220 is disposed at the outermost edge of the display panel, and thus has the advantage of easily sensing external light.

[0065] In the variable transmittance blocking structure 220, the first electrode structure 221 can contact the lower surface of the blocking wall 225, while the second electrode structure 223 can contact the upper surface of the blocking wall 225 at its segmented pattern. That is, the vertical electric field generated by the voltage difference between the first electrode structure 221 and the second electrode structure 223 can directly change the band gap of the organic semiconductor material constituting the blocking wall 225.

[0066] In addition, the second electrode structure 223 may have a larger area at each of its segmented patterns than the upper surface of the barrier wall 225 corresponding to the segmented pattern, so as to protect the barrier wall 225 and ensure the stable electrical characteristics of the barrier wall 225.

[0067] In addition, in the variable transmittance barrier structure 220, a transparent insulating material 222 can be filled between the barrier walls 225, and the transparent insulating material 222 can have a height corresponding to the height D of each barrier wall 225.

[0068] The height D of the barrier 225 can be from 2 μm to 5 μm. This height of the barrier 225 is determined with consideration of preventing viewers outside the field of view (FOV) from perceiving a distracting view. That is, when the height of the barrier 225 is less than 2 μm, the effectiveness of preventing viewers outside the FOV from perceiving a distracting view may be reduced. Conversely, when the height of the barrier 225 exceeds 5 μm, the main viewer's field of view may become too narrow.

[0069] The variable transmittance blocking structure 220 can block light emission outside a predetermined viewing angle range, and the organic semiconductor material of the blocking wall 225 can sense external light.

[0070] Meanwhile, in each of the sub-pixels RSP, GSP, and BSP, its light-emitting element ED includes Figure 4 The pixel circuit shown can therefore be selectively driven.

[0071] like Figure 4 As shown, each sub-pixel SP (RSP, GSP, or BSP) in the active region AA may include, for example, a first transistor T1, a second transistor T2, a storage capacitor Cst, a compensation circuit CC, and a light-emitting element ED.

[0072] For example, the first transistor T1 can be a switching transistor, and the second transistor T2 can be a driving transistor.

[0073] The first electrode (e.g., drain electrode) of the first transistor T1 is electrically connected to the data line DL, and the second electrode (e.g., source electrode) of the first transistor T1 is electrically connected to the first node N1. The gate electrode of the first transistor T1 is electrically connected to the gate line GL. In response to a scan signal provided via the gate line GL, the first transistor T1 transmits a data signal provided via the data line DL to the first node N1.

[0074] The storage capacitor Cst is electrically connected to the first node N1 and is therefore charged by the voltage applied to the first node N1.

[0075] The first electrode (e.g., drain electrode) of the second transistor T2 receives a high-level drive voltage EVDD via a high-level voltage line VDDL, and the second electrode (e.g., source electrode) of the second transistor T2 is electrically connected to the first electrode (e.g., anode AND) of the light-emitting element ED. The second transistor T2 can control the amount of drive current flowing through the light-emitting element ED according to the voltage applied to its gate electrode.

[0076] The semiconductor layer of the first transistor T1 and / or the second transistor T2 may include, but is not limited to, silicon (such as amorphous silicon (aSi), polycrystalline silicon (poly-Si), low-temperature polycrystalline silicon (LT polycrystalline silicon), etc.) or oxides (such as indium gallium zinc oxide (IGZO), etc.). Compared with other materials, at least one of the first transistor T1 and the second transistor T2 may include an oxide semiconductor layer, and therefore can be formed at low temperatures, can maintain amorphous properties, and can have high mobility.

[0077] The light-emitting element (ED) outputs light corresponding to the driving current. The ED can output light of a color selected from red, green, blue, and white.

[0078] The light-emitting element (ED) may include a first electrode AND, an intermediate layer EL disposed on the first electrode AND, and a second electrode CAT configured to provide a common voltage. See reference... Figure 2 The intermediate layer EL comprises a hole-related common transport layer CML1, color selection layers RFL, GFL, BFL, and AFL, and an electron-related common transport layer CML2. Therefore, each sub-pixel emits light of a color generated from a corresponding one of the color selection layers RFL, GFL, BFL, and AFL.

[0079] The second electrode CAT of the light-emitting element (ED) receives a low-level voltage EVSS or ground voltage via a low-level voltage line VSSL. The low-level voltage line VSSL can be located in the non-active region NA. In some cases, the low-level voltage line VSSL can also be located in the active region AA to prevent non-uniformity of the low-level voltage EVSS generated in the active region AA. The low-level voltage EVSS is also referred to as the common voltage.

[0080] A compensation circuit CC can be disposed within the sub-pixel SP to compensate for the threshold voltage or other characteristics of the second transistor T2. The compensation circuit CC can be composed of one or more transistors. The compensation circuit CC may include one or more transistors and capacitors, and can be configured differently depending on its compensation method. The sub-pixel including the compensation circuit CC can include circuits with various structures having different numbers of transistors and / or capacitors, such as 3T1C, 4T2C, 5T2C, 6T1C, 6T2C, 7T1C, 7T2C, etc.

[0081] At the same time, it can provide each sub-pixel Figure 4 The pixel circuit shown. Figure 3 The thin-film transistor (TFT) shown can be, for example... Figure 4 The second transistor T2.

[0082] Next, the configurations other than the variable transmittance blocking structure 220 will be described sequentially.

[0083] The substrate 110 on which sub-pixels RSP, GSP and BSP are disposed can be composed of a single layer or multiple layers.

[0084] The substrate 110 may include at least one of a glass substrate, a plastic film, or a metal plate having a certain supporting strength. The substrate 110 may also be made of a flexible material. For example, when the substrate 110 is composed of multiple layers, it may have a laminated structure of a first organic film, an inorganic insulating layer, and a second organic film. The outermost first organic film can prevent the penetration of external impurities and has a protective function. The second organic film can promote the planarization of the surface on which the internal array structure will be formed and can prevent the transfer of charge or impurities from the outside to the inside.

[0085] A first insulating layer 121 may be provided on the substrate 110. The first insulating layer 121 may serve as a buffer layer or an active buffer layer. The buffer layer or active buffer layer may prevent impurities from moving upward from the underside of the wiring and active layers included in the internal array, and may also serve to support and protect the upper configuration. The first insulating layer 121 may be composed of multiple layers.

[0086] On the first insulating layer 121, a thin-film transistor TFT and a storage capacitor can be provided for each of the sub-pixels RSP, GSP and BSP.

[0087] On the first insulating layer 121, a light shielding layer 131 may be provided to prevent light from being transmitted from below to the active layer 132 of the thin-film transistor TFT.

[0088] The second insulating layer 122 may be disposed between the optical shielding layer 131 and the active layer 132 to provide insulation.

[0089] The thin-film transistor (TFT) can be disposed at each of a plurality of sub-pixels on the second insulating layer 122. For example, the TFT may include: an active layer 132; a gate electrode 133 configured to overlap the active layer 132, wherein the third insulating layer 123 is disposed between the active layer 132 and the gate electrode 133; and first and second source / drain electrodes 134 and 135 respectively connected to opposite sides of the active layer 132.

[0090] For example, the storage capacitor may include a first storage electrode and a second storage electrode that overlap each other. At least one of the first storage electrode or the second storage electrode may be made of the same material as the active layer 132, while the other of the first storage electrode and the second storage electrode may be made of the same material as at least one of the gate electrode 133, the first source / drain electrode 134 and the second source / drain electrode 135 or the light shielding layer 131.

[0091] The third insulating layer 123 between the active layer 132 and the gate electrode 133 can be used as a gate insulating layer.

[0092] The active layer 132 may include, for example, a silicon-based semiconductor or an oxide semiconductor. The silicon-based semiconductor may include crystalline and / or amorphous silicon. The oxide semiconductor may include at least one of gallium oxide, tin oxide, zinc oxide, indium oxide, iron oxide, or indium gallium zinc oxide. In some cases, the oxide semiconductor layer may be composed of multiple layers of different materials or with different compositions. Each sub-pixel may include multiple thin-film transistors. In this case, the multiple thin-film transistors may be disposed on different layers. For example, each sub-pixel on substrate 110 may include multiple thin-film transistors with different active layers. For example, a first thin-film transistor may have a silicon-based active layer disposed closer to substrate 110, while a second thin-film transistor may have an active layer made of oxide semiconductor and disposed above the first thin-film transistor.

[0093] The active layer 132 may include a channel region overlapping with the gate electrode 133, and source / drain regions respectively connected to the first and second source / drain electrodes 134 and 135. One of the first and second source / drain electrodes 134 and 135 may serve as the source electrode of a thin-film transistor TFT, while the other of the first and second source / drain electrodes 134 and 135 may serve as the drain electrode of a thin-film transistor TFT.

[0094] The third insulating layer 123 can be selectively disposed above the channel region of the active layer 132, or it can be disposed over the entire surface of the substrate 110, except for the regions through which the first source / drain electrode 134 and the second source / drain electrode 135 extend. The third insulating layer 123 can be used to insulate the active layer 132 and the gate electrode 133 from each other. The third insulating layer 123 can be made of an inorganic insulating material. For example, the third insulating layer 123 can be composed of a silicon oxide (SiOx) layer, a silicon nitride (SiNx) layer, a silicon oxynitride (SiOxNy) layer, or a multilayer structure thereof.

[0095] A gate electrode 133 may be formed on the third insulating layer 123. The gate electrode 133 may be configured to face the active layer 132, wherein the third insulating layer 123 is interposed between the active layer 132 and the gate electrode 133.

[0096] A fourth insulating layer 124 covering and protecting the gate electrode 133 may be formed on the gate electrode 133. Alternatively, the fourth insulating layer 124 may be used to protect at least one electrode of the thin-film transistor (TFT), such as the gate electrode 133 and the active layer 132. The fourth insulating layer 124 may be made of an inorganic insulating material. For example, the fourth insulating layer 124 may be composed of a silicon oxide (SiOx) layer, a silicon nitride (SiNx) layer, a silicon oxynitride (SiOxNy) layer, or a multilayer structure thereof.

[0097] The first source / drain electrode 134 and the second source / drain electrode 135 may be disposed on the fourth insulating layer 124. The fourth insulating layer 124 and the third insulating layer 123 may include contact holes to allow the first source / drain electrode 134 and the second source / drain electrode 135 to contact the opposite ends of the active layer 132, respectively. To form the contact holes, regions of the fourth insulating layer 124 and the third insulating layer 123 corresponding to the respective contact holes may be removed.

[0098] The gate electrode 133, the first source / drain electrode 134, and the second source / drain electrode 135 can each be composed of a single layer or multiple layers.

[0099] When the gate electrode 133 and the first and second source / drain electrodes 134 and 135 each have a single-layer structure, they can be made of a material selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and their alloys. Furthermore, when the gate electrode 133 and the first and second source / drain electrodes 134 and 135 each have a multilayer structure, they can each be constructed as a bilayer structure of molybdenum / aluminum-neodymium, molybdenum / aluminum, titanium / aluminum, or copper / molybdenum. Alternatively, the gate electrode 133 and the first source / drain electrode 134 and the second source / drain electrode 135 can each be constructed as a trilayer structure of molybdenum / aluminum-neodymium / molybdenum, molybdenum / aluminum / molybdenum, titanium / aluminum / titanium, or molybdenum-titanium / copper / molybdenum-titanium.

[0100] However, this disclosure is not limited to the examples described above. The gate electrode 133 and the first and second source electrodes 134 and 135 may be formed as a multilayer structure made of a material selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and alloys thereof.

[0101] The first to fourth insulating layers 121, 122, 123 and 124 can each be made of an inorganic insulating material. For example, the inorganic insulating layer can be at least one of a silicon oxide (SiOx) layer, a silicon nitride (SiNx) layer or a silicon oxynitride (SiOxNy) layer.

[0102] A first planarization layer 125 and a second planarization layer 126 may be provided on the first to fourth insulating layers 121, 122, 123, and 124. The first planarization layer 125 may have contact holes, and a connection electrode 140 configured to connect to the second source / drain electrode 135 may be disposed in the contact holes. The second planarization layer 126 may be configured to cover the connection electrode 140 and the first planarization layer 125. The first planarization layer 125 and the second planarization layer 126 may each comprise an organic material. The organic material may include one or more of acrylic resin, phenolic resin, polyimide resin, unsaturated polyester resin, polyamide resin, benzocyclobutene, polyphenylene sulfide resin, and polyphenylene sulfide resin.

[0103] The connecting electrode 140 can be formed as a multilayer structure made of a material selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and their alloys. However, embodiments of this disclosure are not limited to the above configuration. In some cases, the connecting electrode 140 can be omitted. When the connecting electrode 140 is omitted, one of the first source / drain electrode 134 and the second source / drain electrode 135 can be directly connected to the first electrode 161 (161a, 161b, or 161c) of the light-emitting element ED.

[0104] The light-emitting element ED is composed of a stack of a first electrode 161 (161a, 161b or 161c), an intermediate layer EL, and a second electrode 170.

[0105] The first electrode 161 (161a, 161b, or 161c) can be used as the anode. The first electrode 161 (161a, 161b, or 161c) extends through the second planarization layer 126 and the first planarization layer 125 and is connected to the transistor TFT. In the illustrated example, a connection electrode 140 is shown as additionally disposed between the first electrode 161 (161a, 161b, or 161c) and the transistor TFT, forming a connection between the transistor TFT and the connection electrode 140, as well as a connection between the connection electrode 140 and the first electrode 161 (161a, 161b, or 161c). However, if the connection electrode 140 is omitted, the second source / drain electrode 135 of the transistor TFT and the first electrode 161 (161a, 161b, or 161c) of the light-emitting element ED can be directly connected to each other.

[0106] The first electrode 161 (161a, 161b, or 161c) may comprise a metallic material with high reflectivity. For example, the first electrode 161 (161a, 161b, or 161c) may be formed as a multilayer structure, such as a Ti / Al / Ti laminate of aluminum and titanium, an ITO / Al / ITO laminate of aluminum and ITO, an alloy of Ag / Pd / Cu (APC), an ITO / APC / ITO laminate of APC alloy and ITO, and an Ag / MoTi laminate of silver and molybdenum / titanium alloy; or it may be formed as a single-layer structure made of a material selected from silver (Ag), aluminum (Al), molybdenum (Mo), gold (Au), magnesium (Mg), calcium (Ca), barium (Ba), and alloys of two or more thereof. The first electrode 161 (161a, 161b, or 161c) may be referred to as a reflective electrode.

[0107] An intermediate layer EL is disposed on the first electrode 161 (161a, 161b or 161c). The intermediate layer EL may include a hole-related first common layer CML1 (e.g., a hole injection layer and a hole transport layer), an organic light-emitting layer EML, and an electron-related second common layer CML2 (e.g., an electron transport layer and an electron injection layer).

[0108] like Figure 3 As shown, the organic light-emitting layer (EML) may include a red light-emitting layer (REML) for the red sub-pixel RSP, a green light-emitting layer (GEML) for the green sub-pixel GSP, and a blue light-emitting layer (BEML) for the blue sub-pixel BSP. The red light-emitting layer (REML) can be patterned at the red sub-pixel RSP. The green light-emitting layer (GEML) can be patterned at the green sub-pixel GSP. The blue light-emitting layer (BEML) can be patterned at the blue sub-pixel BSP. However, these configurations are merely examples.

[0109] In some cases, the intermediate layer EL can have the same tandem configuration for multiple stacks of sub-pixels RSP, GSP, and BSP. In this case, the intermediate layer EL of the light-emitting element ED includes a charge-generating layer disposed between the multiple stacks, and each stack may include one or more light-emitting layers. When the intermediate layer EL has the same structure for the sub-pixels RSP, GSP, and BSP, the light-emitting element ED emits white light, and the red filter 182a, green filter 182b, and blue filter 182c of the color conversion section CFB can selectively emit light corresponding to the colors of the sub-pixels, respectively.

[0110] The edges of the first electrodes 161 (161a, 161b, and 161c) of the corresponding sub-pixels RSP, GSP, and BSP may overlap with the dam 150. The regions of the first electrodes 161 (161a, 161b, and 161c) exposed from the dam 150 may be the emission portions REM, GEM, and BEM. The memory 150 is configured to activate the emission portions REM, GEM, and BEM of the corresponding sub-pixels RSP, GSP, and BSP. The dam 150 may comprise organic or inorganic insulating material.

[0111] When a voltage is applied to the first electrode 161 (161a, 161b, or 161c) and the second electrode 170, holes and electrons move to the organic light-emitting layer through the corresponding layers in the hole injection layer and hole transport layer, as well as the electron injection layer and electron transport layer. In the organic light-emitting layer, holes and electrons recombine to form excitons. When the excitons relax from the excited state to the ground state, light is emitted.

[0112] Multiple layers or at least one layer, including intermediate layers EL (REL, GEL, and BEL), can be provided together throughout the entire active area AA.

[0113] The second electrode 170 can be a common layer disposed at the sub-pixel SP to apply the same voltage. To achieve this, the second electrode 170 can extend from the display area AA to a portion of the non-active area NA.

[0114] The second electrode 170 can be a transmission electrode. The second electrode 170 may include a transparent conductive material (TCO) such as indium tin oxide (ITO) or indium zinc oxide (IZO), or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). When the second electrode 170 includes a semi-transmissive conductive material, luminous efficiency can be enhanced through a microcavity. When the second electrode 170 includes a semi-transmissive conductive material, its thickness can be very small to allow light transmission.

[0115] The first electrode 161 (161a, 161b, or 161c) may include a reflective electrode component to prevent light generated from the intermediate layer EL from being transferred to the light-shielding components below the first electrode 161 (161a, 161b, or 161c). Light generated from the intermediate layer EL can resonate between the second electrode 170 and the first electrode 161 (161a, 161b, or 161c). Ultimately, light can be emitted upwards through the second electrode 170. Because the first electrode 161 (161a, 161b, or 161c) includes a reflective electrode component, the emitting portion REM, GEM, or BEM corresponding to the first electrode 161 (161a, 161b, or 161c) can radiate light even when the first electrode 161 (161a, 161b, or 161c) overlaps with wiring and the transistor TFT, without being affected by this arrangement. Therefore, light emitted from the light-emitting element ED can be observed.

[0116] The light-emitting display device according to each embodiment of this disclosure is implemented as a top-emission type with the emission direction upward. In this case, the first electrode 161 (161a, 161b, or 161c) includes a reflective electrode component, and therefore, light generated from the intermediate layer EL resonates simultaneously through reflection and re-reflection between the first electrode 161 (161a, 161b, or 161c) and the second electrode 170. Finally, the light is emitted through the second electrode 170.

[0117] An encapsulation layer 180 may be disposed on the second electrode 170 to protect the light-emitting element ED. The encapsulation layer 180 may have a single-layer or multi-layer structure. When the encapsulation layer 180 has a multi-layer structure, it may be configured by alternately stacking at least one inorganic encapsulation layer 181 or 183 and at least one organic encapsulation layer 182. The inorganic encapsulation layers 181 and 183 may be used to prevent moisture ingress, and the organic encapsulation layer 182 may be used to cover particles and provide surface planarization. In a planar manner, the organic encapsulation layer 182 may be disposed within the inorganic encapsulation layers 181 and 183. In this case, the inorganic encapsulation layers 181 and 183 may prevent moisture from entering from the sides of the substrate 110.

[0118] A transparent protective layer 190 can be provided on the encapsulation layer 180. The transparent protective layer 190 can planarize the upper surface on which the lens portion 200 will be formed. The transparent protective layer 190 can also maintain a predetermined distance or greater between the light-emitting element ED and the lens portion 200. Therefore, when light encounters the curved lens surface of the lens portion 200, the degree of refraction of the light emitted from the light-emitting element ED can be adjusted.

[0119] The lens portion 200 may include a lens buffer layer 201, a lens layer 203, and a lens protective layer 205. For example, the lens layer 203 may include a high refractive index material, and the lens protective layer 205 may include a low refractive index material, and thus, a refractive effect may be exhibited at the curved lens surface on the surface of the lens layer 203.

[0120] The color conversion section CFB is disposed on the lens section 200. The color conversion section CFB may include a color conversion buffer layer 210, a light shielding layer 211, color conversion layers 212a, 212b and 212c and a color conversion protection layer 215 disposed above the lens section 200.

[0121] In some cases, the color conversion buffer layer 210 can be omitted.

[0122] The light shielding layer 211 is configured to correspond to the non-emitting portion (NEA). For example, the light shielding layer 211 may include at least one of a light-absorbing material, a black material, or a light-shielding material. The light shielding layer 211 can completely block light in the visible spectrum. Alternatively, the light shielding layer 211 may also be composed of a laminated material that blocks light at wavelengths corresponding to at least a portion of the visible spectrum.

[0123] Color conversion layers 212a, 212b, and 212c transmit light in predetermined wavelengths while absorbing or blocking light in other wavelengths. For example, red filter 212a may be configured to correspond to the red light emitting portion REM of red sub-pixel RSP, green filter 212b may be configured to correspond to the green light emitting portion GEM of green sub-pixel GSP, and blue filter 212c may be configured to correspond to the blue light emitting portion BEM of blue sub-pixel BSP.

[0124] Color conversion layers 212a, 212b and 212c can extend to the non-emissive portion NEA, which is respectively located outside the emitting portions REM, GEM and BEM, so that color conversion function is performed even for oblique light.

[0125] Figure 5 It is a graph depicting the light absorption characteristics of materials with different band gaps.

[0126] exist Figure 5 In the process, the first material MA has a band gap of 1.44 eV, and the second material MB has a band gap of 1.35 eV. Figure 5 The graph shows that the first material MA, which has a larger band gap than the second material MB, exhibits light absorption characteristics in the wavelength range near the visible light band.

[0127] In each embodiment of the display panel and display device according to the present disclosure, the barrier wall may be made of an organic semiconductor material having a band gap of about 1.5 eV to 3.5 eV, and thus may have light absorption properties in the visible spectrum shorter than the visible spectrum of the first material MA.

[0128] A band gap range of 1.5 eV to 3.5 eV provides light absorption characteristics in the visible spectrum.

[0129] Next, a display panel according to another embodiment will be described.

[0130] Figure 6 This is a cross-sectional view of a display panel according to another embodiment of the present disclosure.

[0131] Figure 6 The display panel in the embodiment is the same as the one referenced above. Figure 3 The described display panel has the same configuration in the portion below the color conversion section (CFB). Therefore, a description of the identical configuration will not be given.

[0132] The lens portion 300 may include a lens buffer layer 301, a lens layer 303, and a lens protective layer 305.

[0133] The color conversion section CFB is disposed on the lens section 300. The color conversion section CFB may include a color conversion buffer layer 310, a light shielding layer 311, color conversion layers 312a, 312b and 312c and a color conversion protection layer 315 disposed above the lens section 300.

[0134] like Figure 6 As shown, the transmittance variable barrier structure 320 includes a first electrode structure 321 and a second electrode structure 323 facing each other, wherein a barrier wall 325 is disposed between the first electrode structure 321 and the second electrode structure 323.

[0135] Figure 6 The variable transmittance blocking structure 320 has partial transmittance in the vertical direction by adjusting the band gap of the organic semiconductor material constituting the blocking wall 325.

[0136] When the barrier 325 has partial transmittance, the opaque configuration within a predetermined viewing angle range can be omitted, resulting in enhanced brightness within that range. Furthermore, beyond the predetermined viewing angle range, interference images are prevented from transmitting through the barrier 325. Therefore, viewers outside the predetermined viewing angle range can be prevented from perceiving interfering or distorted images.

[0137] Simultaneously, at least one side of the first electrode structure 321 and the second electrode structure 323 of the variable transmittance blocking structure 320 can remain in a floating state. In this case, the band gap of the blocking wall 325 is adjusted according to the light intensity sensed by the blocking wall 325 corresponding to the ambient illuminance outside the display panel. As a result, the visible spectrum blocked or absorbed by the blocking wall 325 is adjusted, and therefore, light outside a predetermined viewing angle range can be blocked.

[0138] Figure 7 This is a plan view showing an area of ​​a display panel according to another embodiment of the present disclosure.

[0139] Figure 7 The display panel shown in another embodiment of this disclosure illustrates an example where the blocking walls 225 or 325 are independently configured to be configured to emit corresponding emitting portions REM, GEM, and BEM of different colors. In this case, the blocking walls 225 or 325 provided for each of the emitting portions REM, GEM, and BEM are spaced apart from the blocking walls 225 or 325 surrounding the emitting portions adjacent to them.

[0140] Figure 7The barrier walls 225 or 325 shown are arranged in the form of annular islands surrounding the respective emitting portions REM, GEM, and BEM, or adjacent ones of the emitting portions REM, GEM, and BEM. The barrier walls 225 or 325 are configured to have a width narrower than the width of the embankment 150 and the light shielding layer 211 or 311 configured to overlap with the barrier walls 225 or 325, in order to prevent a reduction in transmittance in the vertical direction.

[0141] exist Figure 7 In the example, compared to the red emission portion (REM) and the blue emission portion (BEM), the green emission portion (GEM) is arranged diagonally and more densely. The reason for configuring the green emission portion (GEM) with a higher density is that green significantly contributes to the representation of white. However, embodiments of this disclosure are not limited to the above configuration.

[0142] in addition, Figure 7 The example shown illustrates a case where each of the emitting portions REM, GEM, and BEM has a circular shape. However, this is merely an example, and embodiments of this disclosure are not limited to this example. Each of the emitting portions REM, GEM, and BEM may have a polygonal shape other than a circular shape, and in some cases, a portion of the polygonal shape or all the corners of the polygonal shape may be rounded. Furthermore, the size and density of each emitting portion REM, GEM, and BEM can vary depending on the requirements of light emission expression.

[0143] As described above Figure 7 The barrier 225 or 325 is included in the reference. Figure 3 or Figure 6 The described variable transmittance blocking structure is used to prevent viewers outside a predetermined viewing angle from perceiving interfering images.

[0144] Hereinafter, examples of display devices that employ a display panel according to embodiments of the present disclosure will be described.

[0145] The display panel of this disclosure may have an eyeglasses-type, helmet-type, or strap-type appearance, such as in a head-mounted display device.

[0146] Figure 8 This is a perspective view of a display device according to an embodiment of the present disclosure. Figure 9 The viewer wearing is shown from the top side. Figure 8 A plan view showing the status of the display device.

[0147] like Figure 8 and Figure 9As shown, the display device denoted by reference numeral "2000" according to an embodiment of this disclosure is a head-mounted display device. The display device 2000 includes a main body 550 corresponding to the viewer's eyes RE and LE, a first inner display panel 510 and a second inner display panel 520 disposed on the inner surface of the main body 550 to correspond to the viewer's eyes RE and LE respectively, outer display panels 551 and 552 disposed on the outer surface of the main body 550, and connectors 400 configured to interconnect opposite sides of the main body 550.

[0148] In this configuration, the main body 550 has a surface area in the XY plane sufficient to cover the facial area where the viewer's eyes RE and LE are located. The main body 550 also has a predetermined thickness in the Z-axis direction between the viewer's eyes RE and LE and the external display panels 551 and 552.

[0149] Additionally, the main body 550 may have a first lens portion 450a and a second lens portion 450b provided on its inner surface, the first lens portion 450a and the second lens portion 450b being configured to converge the image into the viewer's eyes LE and RE, respectively.

[0150] In some cases, the first lens portion 450a and the first inner display panel 510 can be integrated into a single unit on the inner surface of the main body portion 550, and similarly, the second lens portion 450b and the second inner display panel 520 can be integrated into a single unit. Therefore, these integrated units can be disposed together within the main body 550.

[0151] Since the display device 1000 moves with the viewer's head when the viewer's head moves, the vertical distance between each of the first inner display panel 510 and the second inner display panel 520 and the corresponding one of the viewer's eyes LE and RE is always constant, regardless of the viewer's movement.

[0152] refer to Figures 2 to 7 Each of the described display panels can be configured as follows: Figure 9 External display panels 551 and 552. External display panels 551 and 552 can be configured to selectively project images or display signs or specific images onto the eyes of a viewer wearing the display device 2000. External display panels 551 and 552 display images separate from the images corresponding to the viewer's eyes displayed on the first internal display panel 510 and the second internal display panel 520.

[0153] Variable transmittance blocking structures 220 or 320 are respectively disposed at the outermost edges of the outer display panels 551 and 552. Therefore, when a viewer separate from the viewer wearing the display device 2000 views the display device 2000 from the outside, the variable transmittance blocking structures 220 or 320 can sense external or ambient light and prevent the perception of interfering images by the separate viewer located outside the FOV of the display device 2000. Here, the interfering image can be an image outside the FOV of the outer display panels 551 and 552 themselves, or it can be an image generated from the first inner display panel 510 and the second inner display panel 520.

[0154] Therefore, in the display device including the display panel of each embodiment of the present disclosure, the image viewed by a viewer wearing the display device 2000 through the first inner display panel 510 and the second inner display panel 520 disposed on the inner surface of the main body 550 is imperceptible to a viewer located outside the display device 2000.

[0155] A variable transmittance blocking structure 220 or 320 is disposed at the outermost edge of the display device 2000, and thus can easily sense external light passing through the blocking wall 225 or 325. At the same time, the variable transmittance blocking structure 220 or 320 can absorb or block light corresponding to at least a portion of the visible spectrum, thereby preventing viewers outside the FOV from perceiving interfering images.

[0156] Each embodiment of the present disclosure includes a display panel and a display device comprising a display panel, wherein a barrier made of an organic semiconductor material is included to prevent a viewer outside a predetermined viewing angle from perceiving an interfering image.

[0157] Each embodiment of the present disclosure includes an electrode structure above and below a barrier wall. Therefore, the band gap can be adjusted by forming a vertical electric field on the barrier wall through the electrode structure. Based on the band gap adjustment, light corresponding to at least a portion of the visible spectrum can be blocked and / or absorbed, thereby achieving a narrow viewing angle within a predetermined viewing angle range.

[0158] The embodiments of this disclosure are not limited to, for example Figure 8 and Figure 9 The display device shown in the disclosure. For example, the display device according to embodiments of this disclosure may be implemented in a form separate from the viewer's (user's) body rather than a head-mounted type. For example, an internal display panel may be disposed on the inner surface of the windshield viewed by the driver of the vehicle, and Figures 2 to 7The display panel described herein can be adjusted to be an external display panel on the outer surface of the vehicle's windshield. Another viewer outside the vehicle can view the image through the external display panel located on the outer surface of the vehicle's windshield. In this case, the other viewer outside the vehicle can visually identify an image unrelated to the image perceived by the driver inside the vehicle through the variable transmittance blocking structure without interference.

[0159] A display panel according to one embodiment of the present disclosure may include: a substrate having a plurality of emitting portions spaced apart from each other, a light-emitting element on the substrate, a lens portion on the light-emitting element, a color conversion portion on the lens portion, and a transmittance variable blocking structure above the color conversion portion, the transmittance variable blocking structure including blocking walls corresponding to regions between the plurality of emitting portions.

[0160] In a display panel according to one embodiment of the present disclosure, each barrier wall may include a material having a band gap of 1.5 to 3.5 eV.

[0161] In a display panel according to one embodiment of the present disclosure, each barrier may include an organic semiconductor material whose band gap is variable according to the wavelength of light incident thereon.

[0162] In a display panel according to one embodiment of the present disclosure, each barrier may have light absorption characteristics for at least a portion of the visible light wavelength.

[0163] In a display panel according to one embodiment of the present disclosure, a variable transmittance blocking structure may include a first electrode structure and a second electrode structure facing each other, with a blocking wall located between the first electrode structure and the second electrode structure. The first electrode structure has a plate-like shape, and the second electrode structure includes segmented patterns corresponding to the blocking walls surrounding a plurality of emitting portions.

[0164] In a display panel according to one embodiment of the present disclosure, the barrier may be arranged in the form of annular islands surrounding a plurality of emitting portions.

[0165] In a display panel according to one embodiment of the present disclosure, a first electrode structure is in contact with the lower surface of a barrier wall, and a second electrode structure is in contact with the upper surface of the barrier wall.

[0166] In a display panel according to one embodiment of the present disclosure, the second electrode structure may have an area larger than the upper surface of the barrier wall corresponding to the segmented pattern.

[0167] In a display panel according to one embodiment of the present disclosure, a transparent insulating material may be filled between adjacent barrier walls, and the transparent insulating material has a height corresponding to the height of the barrier walls.

[0168] In a display panel according to one embodiment of the present disclosure, the color conversion section may include a light shielding layer corresponding to a barrier and a color filter corresponding to an emitting section.

[0169] In a display panel according to one embodiment of the present disclosure, each of the barrier walls may have a smaller width than the corresponding one of the light shielding layers.

[0170] The display panel according to one embodiment of the present disclosure may further include a voltage difference application device to apply a voltage difference between the first electrode structure and the second electrode structure.

[0171] The voltage difference provided by the voltage difference application device can be selectively controlled.

[0172] In a display panel according to one embodiment of the present disclosure, the light-emitting element may include: a plurality of first electrodes corresponding to a plurality of emitting portions; an intermediate layer; and a second electrode.

[0173] The edges of the multiple first electrodes can be covered by a dam to expose the multiple first electrodes of the multiple emission portions.

[0174] At least one of the retaining walls may have a width smaller than that of the dike.

[0175] In a display panel according to one embodiment of the present disclosure, each barrier may have a trapezoidal cross-section, wherein the top side of the trapezoid is longer than the bottom side.

[0176] A display panel according to one embodiment of the present disclosure may further include an encapsulation layer and a transparent protective layer between the light-emitting element and the lens portion.

[0177] In a display panel according to one embodiment of the present disclosure, each barrier wall may have a height of 2 to 5 μm.

[0178] A display device according to an embodiment of the present disclosure may include a main body, an inner display panel disposed on the inner surface of the main body to correspond to the eyes of a viewer, the aforementioned display panel disposed on the outer surface of the main body, and a connector configured to interconnect opposite sides of the main body.

[0179] The display panel of this disclosure and the display device using the display panel have the following effects.

[0180] By including a barrier wall containing organic semiconductor materials, it is possible to prevent viewers located outside a predetermined viewing angle from perceiving interfering images.

[0181] Electrode structures are positioned above and below the blocking wall. Therefore, by forming a vertical electric field on the blocking wall using the electrode structures, the band gap can be adjusted. Based on the band gap adjustment, light corresponding to at least a portion of the visible spectrum can be blocked and / or absorbed, thereby achieving a narrow viewing angle within a predetermined viewing range.

[0182] The structure positioned on the outermost edge of the display panel can facilitate external light sensing through a variable transmittance barrier structure. This can also enhance the sensitivity of the sensor.

[0183] Organic semiconductor materials do not cause degassing due to their material properties. Therefore, organic semiconductor materials are beneficial for realizing eco-friendly devices. Another advantage of organic semiconductor materials is that they allow for continuous process optimization. Therefore, environmental / social / governance (ESG) goals can be achieved.

[0184] By providing a barrier wall with partial transmittance, the opaque configuration within a predetermined viewing angle can be omitted, resulting in enhanced brightness within that viewing angle. Furthermore, beyond the predetermined viewing angle, the transmission of interfering imagery through the barrier wall is prevented. Therefore, viewers outside the predetermined viewing angle can be prevented from perceiving interfering or distorted images.

[0185] Although preferred embodiments of the present disclosure have been disclosed for illustrative purposes, those skilled in the art will understand that various modifications, additions, and substitutions are possible without departing from the scope and spirit of the present disclosure as disclosed in the appended claims.

Claims

1. A display panel, comprising: A substrate having a plurality of emitting portions spaced apart from each other; A light-emitting element, wherein the light-emitting element is located on the substrate; The lens portion is located on the light-emitting element; The color conversion section is located on the lens section; as well as A variable transmittance blocking structure is located above the color conversion portion, and the variable transmittance blocking structure includes blocking walls corresponding to the regions between the plurality of emitting portions.

2. The display panel according to claim 1, wherein, Each of the barrier walls comprises a material having a band gap of 1.5 eV to 3.5 eV.

3. The display panel according to claim 1, wherein, Each of the barrier walls comprises an organic semiconductor material whose band gap can vary according to the wavelength of light incident on each of the barrier walls.

4. The display panel according to claim 1, wherein, Each of the barrier walls has light absorption properties for at least a portion of the visible light wavelength.

5. The display panel according to claim 1, wherein: The variable transmittance blocking structure further includes a first electrode structure and a second electrode structure facing each other, and the blocking wall is disposed between the first electrode structure and the second electrode structure. The first electrode structure has a plate-like shape; and The second electrode structure includes segmented patterns that correspond to the barrier walls.

6. The display panel according to claim 5, wherein, The barrier walls are respectively arranged in the form of ring-shaped islands surrounding the plurality of launching sections.

7. The display panel according to claim 5, wherein: The first electrode structure contacts the lower surface of the barrier wall; and The second electrode structure contacts the upper surface of the barrier wall.

8. The display panel according to claim 5, wherein, The second electrode structure has an area at each of its segmented patterns that is larger than the upper surface of the barrier wall corresponding to the segmented pattern.

9. The display panel according to claim 5, wherein, A transparent insulating material is filled between adjacent barrier walls in the barrier wall, and the transparent insulating material has a height corresponding to the height of the barrier wall.

10. The display panel according to claim 1, wherein, The color conversion section includes light-shielding layers corresponding to the blocking wall and color filters corresponding to the emitting section.

11. The display panel according to claim 10, wherein, Each of the barrier walls has a smaller width than the corresponding one of the light shielding layers.

12. The display panel according to claim 5, further comprising: A voltage difference applying device, the voltage difference applying device being used to apply a voltage difference between the first electrode structure and the second electrode structure. The voltage difference provided by the voltage difference application device is selectively controlled.

13. The display panel according to claim 1, wherein: The light-emitting element includes: a plurality of first electrodes, each of which corresponds to a plurality of emitting portions; an intermediate layer; and a second electrode; The edges of the plurality of first electrodes are covered by a dam to expose the plurality of first electrodes of the plurality of emitting portions; and At least one of the barrier walls has a width smaller than that of the embankment.

14. The display panel according to claim 1, wherein, Each of the barrier walls has a trapezoidal cross-section, with the top side of the trapezoid longer than the bottom side.

15. The display panel according to claim 1, further comprising: An encapsulation layer and a transparent protective layer are located between the light-emitting element and the lens portion.

16. The display panel according to claim 1, wherein, Each of the barrier walls has a height of 2 μm to 5 μm.

17. A display device, comprising: main body; An inner display panel is disposed on the inner surface of the main body to correspond to the viewer's eyes respectively; The display panel according to claim 1, wherein the display panel is disposed on the outer surface of the main body; and A connector configured to interconnect opposite sides of the body.

Images